OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT

Abstract

Optoelectronic component (10), with a first electrode (20), an organic functional layer structure above the first electrode (20), a second electrode (23) above the organic functional layer structure (22), an encapsulation layer (24) over the second electrode (23), and a protective layer (36) formed over the encapsulation layer, which has at least a first section (40) in which the material of the protective layer (36) has a first modulus of elasticity, and which has at least a second section (42) formed laterally next to the first section (40) in which the material of the protective layer (36) has a second modulus of elasticity which is smaller than the first modulus of elasticity, wherein the protective layer (36) has at least one third section (46) which is formed in the lateral direction next to the first section (40) and / or next to the second section (42) and which has a third modulus of elasticity that is different from the first modulus of elasticity and the second modulus of elasticity.

Description

[0001] The invention relates to an optoelectronic component and a method for manufacturing an optoelectronic component.

[0002] The following publications concern optoelectronic components: DE 10 2015 105 766 A1, US 2016 / 0 211 482 A1, US 2016 / 0 111 678 A1, DE 10 2014 110 971 A1.

[0003] Optoelectronic components regularly have protective layers applied, which serve, for example, as covers to protect the components or to secure covers to them. These protective layers are often applied in a viscous state and then hardened. During the hardening process, the layers beneath the protective layers can be damaged due to thermal expansion or contraction of the protective layers. Furthermore, in the case of flexible optoelectronic components, the hardened protective layers can cause problems, particularly damage, when the components are bent.

[0004] Organic optoelectronic devices, also known as organic optoelectronic devices, are finding increasingly widespread application. For example, organic light-emitting diodes (OLEDs) are increasingly being used in general lighting, such as as area light sources. An organic optoelectronic device, such as an OLED, can have an anode and a cathode with an organic functional layer system in between.The organic functional layer system can include one or more emitter layers in which electromagnetic radiation is generated, a charge-generating layer structure consisting of two or more charge-generating layers (CGL) for charge-generating layer generation, as well as one or more electron-blocking layers, also referred to as hole transport layers (HTL), and one or more hole-blocking layers, also referred to as electron transport layers (ETL), to direct the current flow.

[0005] For use in automotive lighting as well as general lighting, there is an increasing demand for flexible and / or increasingly thin light sources. In particular, flexible OLEDs with metal or plastic films or thin glass as substrates meet the requirements for formability and aesthetics. Depending on the substrate material used, the size of the component, the design of the organic functional layer system, the encapsulation, optional scratch protection, and the electrical contacting, a specific minimum bending radius for the flexible OLED is determined.If the component is bent more severely, various failures occur: direct failure due to cracking in the emissive layer, visible as dark streaks; delamination of the individual layers; delayed failure of individual areas in the luminescent surface (this failure occurs faster with excessive bending than in an identical, unbent component); faster degradation in humid environments due to damage to the encapsulation; and / or damage to the electrical contacts, for example, contact pads or flex-PCB bonding connections.

[0006] Delamination can occur, for example, due to tensile forces resulting from temperature fluctuations at the edge of the OLED. Delamination, the separation of two contacting layers, occurs primarily between the two layers with the weakest adhesion. It is more common in the outer regions of the optoelectronic component, i.e., at the edges, and in areas of significant bending. Delamination can occur both within the optically active area, such as the light-emitting surface, and in the optically inactive area, i.e., outside the light-emitting surface. The consequences of delamination include the formation of dark streaks, complete electro-optical failure of the component, and / or a reduced lifespan.

[0007] Previous approaches to solving the aforementioned problems have focused primarily on the edge region of the OLED outside the active emission zone. In this region, improved adhesion between the top and bottom layers—that is, the substrate-side layers and the encapsulation layers—is sought. This can be achieved, for example, by using materials with good adhesion to each other, by selectively introducing structures to increase the surface area, and / or by widening the overlap zones of different layers. If such approaches are not feasible, for example, due to limitations in material selection or because a very narrow non-luminescent area is desired for design reasons, the achievable minimum bending radius increases significantly.

[0008] One object of the invention is to provide an optoelectronic component that is particularly robust, particularly flexible, has a particularly long service life and / or functions particularly reliably.

[0009] One object of the invention is to provide a method for manufacturing an optoelectronic component that is particularly simple, fast and / or cost-effective and / or contributes to the optoelectronic component being particularly robust, particularly flexible, having a particularly long service life and / or functioning particularly reliably.

[0010] One object of the invention is solved by an optoelectronic component comprising: a first electrode; an organic functional layer structure over the first electrode; a second electrode over the organic functional layer structure; an encapsulation layer over the second electrode; and a protective layer formed over the encapsulation layer, which has at least a first section in which the material of the protective layer has a first modulus of elasticity, and which has at least a second section formed laterally next to the first section in which the material of the protective layer has a second modulus of elasticity that is smaller than the first modulus of elasticity.

[0011] The protective layer, with its sections exhibiting different moduli of elasticity, allows for the adjustment of the moduli of elasticity and the corresponding hardness levels of the protective layer in sections subject to particularly high stresses or beneath which especially sensitive and / or vulnerable layers are located. For example, in an area where particularly good adhesion is desired, the first section can be designed with the high modulus of elasticity. Alternatively or additionally, in an area where particularly good flexibility is desired, the second section can be designed with the low modulus of elasticity. Alternatively or additionally, in an area of ​​the protective layer beneath which the encapsulation layer is particularly sensitive and / or vulnerable, such as at the edge of the encapsulation layer, the second section can be designed with the low modulus of elasticity.These measures can contribute to a particularly high degree of flexibility in the optoelectronic component and / or a particularly low probability of damage, such as delamination, of individual or multiple layers of the optoelectronic component. For example, the susceptibility to delamination of layers in the encapsulation structure can be kept particularly low. This results in the optoelectronic component being particularly robust and flexible, exhibiting a particularly long lifetime, and / or functioning with exceptional reliability, especially over its entire lifetime.

[0012] In this description and the attached claims, the terms "hardness" and "modulus of elasticity" are used interchangeably. In other words, the corresponding property of a body or section can be described either by its hardness or by its modulus of elasticity. Thus, the hardness can be used instead of the modulus of elasticity to specify the corresponding property of a body, and vice versa.

[0013] Furthermore, the varying hardness of the protective layer in a top-emitter OLED allows for targeted and / or particularly favorable shaping of its emission properties, as the sections with different hardness levels have correspondingly different effects on the emissions. Additionally, the optical appearance of the OLED when switched off can be positively influenced by the structuring of the protective layer, since the sections with different hardness levels create a correspondingly different visual impression. In a flexible bottom-emitter OLED, the bending properties of the flexible OLED can be improved by the targeted combination of sections with different hardness levels with the thickness of a final heat-distributing film.

[0014] The optoelectronic component can have multiple first sections, each exhibiting the first elastic modulus (i.e., a first degree of hardness), and multiple second sections, each exhibiting the second elastic modulus (i.e., a second degree of hardness). The first section can completely surround the second section laterally. Alternatively, the second section can completely surround the first section laterally. Alternatively or additionally, the first and second sections can be arranged alternately and / or in a lateral arrangement.

[0015] According to a further development, the material with the first modulus of elasticity and the material with the second modulus of elasticity are formed from the same starting material. During the manufacturing of the optoelectronic component, the starting material is applied, for example, in a flat layer and then treated differently in the first stage than in the second. In particular, the starting material in the first stage is hardened to such an extent that it subsequently exhibits the first degree of hardness. In the second stage, the starting material is either not hardened at all or hardened to such an extent that it only exhibits the second degree of hardness. Although the material in the first stage is formed from the same starting material as in the second stage, the material in the first stage can differ from the material in the second stage due to the different hardness, especially with regard to its microscopic structure.Forming the entire protective layer from the same starting material can make the optoelectronic component particularly easy to manufacture, since only a single starting material is required and / or since the starting material can be formed extending over the first and second sections.

[0016] According to a further development, the first section forms a laterally outer region of the protective layer, and the second section forms a laterally inner region. This ensures that the protective layer is particularly strong and stable in the outer region, which closes off the protective layer laterally and is crucial for preventing contaminants from entering the optoelectronic component. In this region, relatively low forces act when the optoelectronic component is bent. Conversely, the protective layer remains relatively soft and elastic in the inner region, which is surrounded by the outer region and where relatively high forces act when the optoelectronic component is bent. This contributes to the optoelectronic component being particularly well protected by the protective layer with regard to both the ingress of contaminants and the forces occurring during bending.This is particularly advantageous if the optoelectronic component is flexible.

[0017] According to a further development, the second section forms a lateral outer region of the protective layer, and the first section forms a lateral inner region. Since the protective layer requires less hardening in the outer region than in the inner region, the layers over which the protective layer is formed experience particularly low forces in the outer region due to only minimal thermal expansion or compression of the protective layer material. This protects the corresponding layers and prevents, or at least significantly minimizes, damage to them, for example, through delamination. Because the protective layer in the inner region is relatively hard, the underlying optically active layers are particularly well protected there, especially against external mechanical impacts.For example, the particularly hard protective layer in the inner area can serve as scratch protection. This is especially advantageous if the optoelectronic component is rigid.

[0018] The protective layer has at least one third section, which is formed laterally adjacent to the first and / or second section and which has a third modulus of elasticity, i.e., a third degree of hardness, that differs from the first and second moduli of elasticity. This third section with the third modulus of elasticity allows for a further and / or more detailed gradation of the hardness of the protective layer, which can help to fine-tune the flexibility of the optoelectronic component and / or the protective function of the protective layer to the intended use of the optoelectronic component.

[0019] According to further training, the optoelectronic component is designed to be flexible and / or non-destructively bendable. For example, the optoelectronic component is a flexible OLED.

[0020] According to a further development, the optoelectronic component has a preferred bending direction, with the sections being designed to favor this direction. The fact that the optoelectronic component has a preferred bending direction means that it is easier and / or more flexible to bend in this direction than in any other direction. For example, the optoelectronic component may be relatively flexible and / or rigid perpendicular to the preferred bending direction.The fact that the sections are designed in such a way as to favor the preferred bending direction can mean that the optoelectronic component already has the preferred bending direction even without the sections, and that the sections are designed depending on the preferred bending direction so that it is not affected at all or at least as little as possible, or that the optoelectronic component has no preferred bending direction without the sections, and that the preferred direction is determined by the targeted design of the sections.

[0021] According to a further development, the sections are at least partially formed in the form of parallel strips. The strip shape of the first sections results in the optoelectronic component being relatively inflexible and / or rigid along the longitudinal direction of the strips. The strip shape of the second sections results in the optoelectronic component being relatively flexible perpendicular to the longitudinal direction of the strips. Thus, the strip shape of the sections can contribute to adjusting the flexibility of the optoelectronic component in different directions and / or different regions.

[0022] According to further training, the strips are formed perpendicular to the preferred bending direction. In other words, the strips extend in a direction perpendicular to the preferred bending direction. Put another way, the longitudinal direction of the strips is perpendicular to the preferred bending direction.

[0023] According to further training, the protective layer is designed as an adhesive layer. For example, the protective layer is an adhesive layer. The adhesive layer can be used, for instance, to attach a cover to the optoelectronic component. The cover can serve, for example, as protection against external mechanical influences and / or for heat dissipation.

[0024] According to further training, the protective layer has the same, or at least approximately the same, thickness across its entire lateral extent. This contributes to a particularly simple design of the protective layer. For example, the starting material for the protective layer can be applied as a uniformly thick layer.

[0025] One object of the invention is solved by a method for manufacturing the optoelectronic component, in which: the first electrode is provided; the organic functional layer structure is formed over the first electrode; the second electrode is formed over the organic functional layer structure; the encapsulation layer is formed over the second electrode; and the protective layer is formed on the encapsulation layer such that the protective layer has the first modulus of elasticity in at least the first section and has the second modulus of elasticity, which is smaller than the first modulus of elasticity, in at least the second section, which is formed laterally next to the first section.

[0026] The previously described enhancements and / or advantages of the optoelectronic component can readily be applied to the manufacturing process of the optoelectronic component. Therefore, a further description of these enhancements and advantages is omitted, at least in part.

[0027] The encapsulation layer can be, for example, a top-TFE (thin film encapsulation). The protective layer is then formed on the encapsulation layer, for example, using a liquid process. This protective layer can consist of an adhesive, for example. Subsequently, one or more further layers can be applied to the protective layer. A cover element can be placed on the protective layer. If the optoelectronic device is a top-emitter OLED, for example, based on a metal substrate, the cover element can have a transparent or translucent barrier film on the emission side, which may optionally possess optical properties. The thickness of the cover element can be varied.If the optoelectronic component is a bottom-emitter OLED, for example based on a plastic substrate, the cover body may have or be a metal foil, for example made of aluminum, where the metal foil can serve for heat distribution.

[0028] By forming the protective layer with different sections, stresses in the optoelectronic component can be specifically reduced, which could otherwise lead to delamination, for example. In the case of a flexible optoelectronic component, this approach utilizes the fact that the sections with varying degrees of hardness, corresponding to different moduli of elasticity, allow the flexible optoelectronic component to be bent and, in particular, remain largely free from delamination beneath the protective layer. Potential stresses are absorbed by the protective layer with its varying degrees of hardness or are prevented from occurring in the first place.

[0029] According to a further training, to form the protective layer, a starting material is applied to the encapsulation layer, extending over the first and second sections, and the starting material is cured, at least in the first section. The starting material can, for example, be an adhesive, synthetic resin, acrylic, and / or epoxy, and / or be UV-curable. Selective curing of the first section can be achieved, for example, by placing a mask over the starting material and irradiating sections of the protective layer exposed within the mask. Subsequently, the remaining UV activators can be destroyed, so that the cross-linking of the material differs locally from one or more adjacent sections.

[0030] According to further training, the starting material is hardened in the second stage to form the protective layer. The hardening of the first and second stages can be carried out simultaneously in a single step, for example, using a mask that is at least partially transparent. Alternatively, the first and second stages can be hardened sequentially, for example, using different radiation intensities and / or for different curing times.

[0031] According to a further development, the first section is formed laterally outside the second section. Alternatively, the first section is formed laterally inside the second section. The protective layer is designed such that it has at least a third section, which is formed laterally next to the first section and / or next to the second section and which has a third modulus of elasticity that differs from the first and second moduli of elasticity.

[0032] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0033] They show: Fig. 1 a lateral sectional view of an example of an optoelectronic component in its unbent state; Fig. 2 a top view of a protective layer of the optoelectronic component according to Fig. 1, Fig. 3 a lateral sectional view of an example of an optoelectronic component in a bent state; Fig. 4 a top view of a protective layer of an example of an optoelectronic component; Fig. 5 a top view of a protective layer of an embodiment of an optoelectronic component; Fig. 6. A top view of a protective layer of an example of an optoelectronic component; Fig. 7 a lateral sectional view of an example of an optoelectronic component in its unbent state; Fig. 8 a flowchart of an embodiment of a method for producing a protective layer for an optoelectronic component.

[0034] The following detailed description refers to the accompanying drawings, which form part of this description and in which specific examples and embodiments are shown for illustration purposes, illustrating how the invention can be implemented. Since components of these examples and embodiments can be positioned in a number of different orientations, the directional terminology is for illustrative purposes only and is in no way restrictive. It is understood that other examples and embodiments may be used and structural or logical modifications may be made without deviating from the scope of protection of the present invention. It is understood that the features of the various examples and embodiments described herein may be combined with one another unless specifically stated otherwise.In the figures, identical or similar elements are provided with identical reference symbols, insofar as this is expedient.

[0035] An optoelectronic component can be either an electromagnetic radiation emitter or an electromagnetic radiation absorber. An electromagnetic radiation absorber could, for example, be a solar cell. An electromagnetic radiation emitter, in various examples and embodiments, could be an electromagnetic radiation emitting semiconductor component and / or be configured as an electromagnetic radiation emitting diode, an organic electromagnetic radiation emitting diode, an electromagnetic radiation emitting transistor, or an organic electromagnetic radiation emitting transistor. The radiation could be, for example, visible light, ultraviolet light, and / or infrared light.In this context, the electromagnetic radiation-emitting component can be, for example, a light-emitting diode (LED), an organic light-emitting diode (OLED), a light-emitting transistor, or an organic light-emitting transistor. The light-emitting component can be part of an integrated circuit in various examples and embodiments. Furthermore, multiple light-emitting components can be provided, for example, housed in a common package.

[0036] During the hardening of a starting material, its microscopic structure, lattice structure, and / or molecular structure can change. Thus, hardening can produce a final material that differs structurally from the starting material. The structure of the final material can depend on the duration and / or intensity of the hardening process. Therefore, different final materials can be produced from the same starting material, depending on the hardening process. However, it is generally possible to determine whether the final materials were formed from the same starting material by examining them.

[0037] The fact that an optoelectronic component is flexible can mean, for example, that it has a minimum bending radius in at least one direction within a range of, for example, 1 mm to 50 cm, 1 mm to 10 cm, or 1 mm to 1 cm.

[0038] Fig. Figure 1 shows a lateral sectional view of an example of an optoelectronic component 10. The optoelectronic component 10 has a substrate 12. The substrate 12 can be translucent or transparent. The substrate 12 serves as a support for electronic elements or layers, for example, light-emitting elements. The substrate 12 can be made of, for example, plastic, metal, glass, quartz, and / or a semiconductor material. The substrate 12 can be mechanically rigid or mechanically flexible.

[0039] If the support 12 is mechanically flexible, it can, for example, comprise a Kapton film (PI), a metal foil, or a PET film. The support 12 can, for example, comprise or be formed from a steel foil, a plastic film, or a laminate with one or more plastic films. The plastic can comprise or be formed from one or more polyolefins (for example, high-density or low-density polyethylene (PE) or polypropylene (PP)). Furthermore, the plastic can comprise or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES), PEEK, PTFE, and / or polyethylene naphthalate (PEN). The support 12 can comprise one or more of the aforementioned materials.

[0040] An optoelectronic layer structure is formed on the support 12. The optoelectronic layer structure has a first electrode layer 14, which includes a first contact section 16, a second contact section 18, and a first electrode 20. The support 12 with the first electrode layer 14 can also be referred to as the substrate. A first barrier layer (not shown), for example, a first barrier thin film, can be formed between the support 12 and the first electrode layer 14.

[0041] The first electrode 20 is electrically coupled to the first contact section 16, for example, directly physically connected to it or formed integrally with it, and electrically insulated from the second contact section 18 by means of an electrical insulation barrier 21. The first electrode 20 can be translucent or transparent. The first electrode 20 comprises an electrically conductive material, for example, metal and / or a transparent conductive oxide (TCO), or a stack of multiple layers comprising metals or TCOs. The first electrode 20 can, for example, have a stack of layers combining a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.The first electrode 20 can alternatively or additionally comprise: networks of metallic nanowires and particles, for example made of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.

[0042] Above the first electrode 20, an optically functional layer structure, for example an organic functional layer structure 22, of the optoelectronic layer structure is formed. The organic functional layer structure 22 can, for example, have one, two, or more sublayers. For example, the organic functional layer structure 22 can have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and / or an electron injection layer. The hole injection layer serves to reduce the band gap between the first electrode and the hole transport layer. In the hole transport layer, the hole conductivity is greater than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is greater than the hole conductivity. The electron transport layer serves to transport the electrons.The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Furthermore, the organic functional layer structure 22 can comprise one, two, or more functional layer structure units, each of which includes the aforementioned sublayers and / or further intermediate layers.

[0043] A second electrode 23 of the optoelectronic layer structure is formed above the organic functional layer structure 22. The second electrode 23 is electrically coupled to the second contact section 18; for example, the second electrode 23 extends directly onto the second contact section 18. The second electrode 23 can be configured according to one of the embodiments of the first electrode 20, whereby the first electrode 20 and the second electrode 23 can be identical or different. The first electrode 20 serves, for example, as the anode or cathode of the optoelectronic layer structure. Correspondingly, the second electrode 23 serves as the cathode or anode of the optoelectronic layer structure.

[0044] The optoelectronic layer structure is an electrically and / or optically active region. The electrically or optically active region is, for example, the area of ​​the optoelectronic device 10 in which electric current flows to operate the optoelectronic device 10 and / or in which electromagnetic radiation is generated or absorbed. A getter structure (not shown) can be arranged on or above the electrically or optically active region. The getter layer can be translucent, transparent, or opaque. The getter layer can comprise or be formed from a material that absorbs and binds substances that are harmful to the active region.

[0045] An encapsulation layer 24 of the optoelectronic layer structure is formed over the second electrode 23 and partially over the first contact section 16 and partially over the second contact section 18. This encapsulation layer 24 encapsulates the optoelectronic layer structure. The encapsulation layer 24 can be configured as a second barrier layer, for example, as a second barrier thin film. The encapsulation layer 24 can also be referred to as thin-film encapsulation. The encapsulation layer 24 forms a barrier against chemical impurities and atmospheric substances, particularly water (moisture) and oxygen. The encapsulation layer 24 can be configured as a single layer, a stack of layers, or a layered structure.The encapsulation layer 24 can comprise or be formed from: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, as well as mixtures and alloys thereof. Optionally, the first barrier layer on the support 12 can be configured corresponding to an embodiment of the encapsulation layer 24.

[0046] In the encapsulation layer 24, a first recess is formed above the first contact section 16, and a second recess is formed above the second contact section 18. A first contact area 32 is exposed in the first recess, and a second contact area 34 is exposed in the second recess. The first contact area 32 serves to electrically contact the first contact section 16, and the second contact area 34 serves to electrically contact the second contact section 18.

[0047] A protective layer 36 is formed above the encapsulation layer 24. The protective layer 36 comprises, for example, an adhesive, such as a laminating adhesive, a lacquer, and / or a resin. The protective layer 36 may, for example, contain particles that scatter electromagnetic radiation, such as light-scattering particles. The protective layer has a first section 40 and a second section 42. The first section 40 and the second section 42 are laterally adjacent and arranged side by side. The first section 40 is formed in an outer region of the protective layer 36, and the second section 42 is formed in an inner region of the protective layer. For example, the first section 40 forms a frame around the second section 42. The material of the protective layer has a first degree of hardness in the first section 40.The following are hardness values ​​determined using the Mohs scale. The material of the protective layer 36 exhibits a second hardness value in the second section 42. The first hardness value is greater than the second hardness value. The first hardness value lies in a range, for example, from 10 to 6. The second hardness value lies in a range, for example, from 6 to 1 or from 5 to 2. The first hardness value corresponds to a first modulus of elasticity, and the second hardness value corresponds to a second modulus of elasticity. The first modulus of elasticity lies in a range, for example, from 400 GPa to 150 GPa or from 200 GPa to 150 GPa. The second modulus of elasticity lies in a range, for example, from 150 GPa to 10 GPa or from 100 GPa to 50 GPa or from 50 GPa to 10 GPa.Hardness grades are determined, for example, as follows: In materials science, especially with metals, testing methods that measure indentation hardness are primarily used. Standardized test specimens are pressed into the workpiece under defined conditions. The surface area or depth of the resulting indentation is then measured. A fundamental distinction is made between static and dynamic hardness testing methods. Dynamic testing methods apply the load to the part being tested abruptly; in static methods, the load is constant or gradually increasing. The modulus of elasticity describes how strongly a material resists deformation. This value is determined for various materials by measuring the deflection of pipes or rods; for steel, it is additionally determined by measuring the elongation of a wire under the influence of a tensile force.Both measurements are performed by recording a deformation-force diagram, which simultaneously allows the proportionality between deformation and force to be checked.

[0048] Optionally, a cover body 38 is formed over the protective layer 36. The protective layer 36 serves to attach the cover body 38 to the encapsulation layer 24. The cover body 38 comprises, for example, plastic, glass, and / or metal. For example, the cover body 38 can be made primarily of glass and have a thin metal layer, such as a metal foil, and / or a graphite layer, such as a graphite laminate, on the glass body. The cover body 38 serves to protect the optoelectronic component 10, for example, from external mechanical forces. Furthermore, the cover body 38 can serve to distribute and / or dissipate heat generated in the optoelectronic component 10.For example, the glass of the cover body 38 can serve as protection against external influences and the metal layer of the cover body 38 can serve to distribute and / or dissipate the heat generated during the operation of the optoelectronic component 10.

[0049] The optoelectronic device 10 can be an OLED or an organic solar cell. In the case of an OLED, the optoelectronic device 10 can be a top-emitter or a bottom-emitter.

[0050] Alternatively, the carrier 12 can be omitted, or the carrier 12 can serve as the first electrode layer 14. Alternatively or additionally, the cover body 38 can be omitted. Alternatively or additionally, several first and second sections 40, 42 can be arranged laterally adjacent to one another. Alternatively or additionally, the outer edges of the carrier 12 and / or the first electrode layer 14 can be flush with the outer edges of the layers above.

[0051] Fig. Figure 2 shows a top view of the protective layer 36 of the optoelectronic component 10 according to Fig. 1. The first section 40 forms a frame around the second section 42. The first section 40 completely surrounds the second section 42 laterally. Alternatively, the first section 40 can only partially surround the second section 42.

[0052] Fig. Figure 3 shows a side sectional view of an example of an optoelectronic component 10 in a bent state, wherein the optoelectronic component 10 corresponds to the one shown in Fig. The optoelectronic component 10 shown in section 1 can correspond to the component shown and is mechanically flexible. Fig. For the sake of clarity, the layers between the substrate 12 and the protective layer 36 are not shown. However, these layers are present in a real optoelectronic component 10 according to this example. The optoelectronic component 10 is bent in a direction that may, for example, be a preferred bending direction 44.

[0053] In an outer region of the optoelectronic component 10, where the first section 40 is formed and the protective layer 36 has a relatively high first hardness, the optoelectronic component 10 is only slightly bent. In an inner region of the optoelectronic component 10, where the second section 42 is formed and the protective layer 36 has a relatively low second hardness, the optoelectronic component 10 is relatively strongly bent. Due to the bending, the distance between the carrier 12 and the cover body 38 in the inner region can be smaller than in or near the outer region. This is possible and / or can be compensated for due to the relatively low hardness of the protective layer 36 in the second section 42.

[0054] Fig. Figure 4 shows a top view of a protective layer 36 of an example of an optoelectronic component 10. The optoelectronic component 10 can, for example, largely correspond, in particular up to the protective layer 36, to the optoelectronic component 10 described above. The preferred bending direction 44 corresponds to that shown in Fig. Figure 4 shows the preferred bending direction 44 in a top view. The optoelectronic component 10 has several first sections 40 and several second sections 42. The second sections 42 are formed in the form of parallel strips. Strip-shaped portions of the first section 40 extend between the second sections 42. In other words, strip-shaped first sections 40 are formed between the strip-shaped second sections 42. The optoelectronic component 10 can be bent particularly easily and over a particularly long distance without damage perpendicular to the longitudinal direction of the second sections 42, i.e., in the preferred bending direction 44.

[0055] Fig. Figure 5 shows a top view of a protective layer 36 of an embodiment of an optoelectronic component 10. The optoelectronic component 10 can, for example, largely correspond, in particular up to the protective layer 36, to the optoelectronic component 10 described above. The preferred bending direction 44 corresponds to that shown in Fig. The optoelectronic component 10 has several first sections 40 and more second sections 42, as shown in Figure 4, in the preferred bending direction 44 in a top view. The second sections 42 are formed in the form of parallel strips. Strip-shaped third sections 46 extend between the second sections 42. The protective layer 36 has a third degree of hardness in the third sections 46, which differs from the first and second degrees of hardness. If the third degree of hardness is less than the second degree of hardness, the optoelectronic component 10 can be bent even more easily and further without damage perpendicular to the longitudinal direction of the second and third sections 42, 46, i.e., in the preferred bending direction 44, than the component shown with respect to Figure 4. Fig. 4 explained optoelectronic component 10. If the third hardness grade is greater than the second hardness grade, the optoelectronic component 10 can be bent less easily and to a lesser extent non-destructively perpendicular to the longitudinal direction of the second and third sections 42, 46, i.e., in the preferred bending direction 44, than the one described with reference to Fig. 4 explained optoelectronic component 10. In addition to the third sections 46, further sections with further different degrees of hardness can be formed.

[0056] Fig. Figure 6 shows a top view of a protective layer 36 of an example of an optoelectronic component 10. The optoelectronic component 10 can, for example, largely correspond, in particular up to the protective layer 36, to the optoelectronic component 10 described above. The preferred bending direction 44 corresponds to that shown in Fig. The preferred bending direction 44 shown in Figure 4 is shown in a top view. The optoelectronic component 10 has several first sections 40 and more second sections 42. Except for the innermost section, the sections 40, 42 are frame-shaped and surround the respective innermost sections 40, 42. The innermost section is one of the second sections 42. Alternatively, the innermost section can be one of the first sections 40. The frames formed by the sections 40, 42 have different widths on different sides. Alternatively, the frames can have the same width on each side. Furthermore, more or less frame-shaped sections 40, 42 can be formed. Additionally, third sections 46 can be formed, for example, frame-shaped third sections 46.

[0057] Fig. Figure 7 shows a side sectional view of an example of an optoelectronic component 10 in its unbent state. Except for the protective layer, the optoelectronic component 10 corresponds to the one shown in Figure 7. Fig. Figure 1 shows the optoelectronic component 10. In the optoelectronic component 10, the first section 40 of the protective layer 36 is formed laterally inwards and is surrounded laterally by the second section 42. Thus, the second section 42, with its relatively low second hardness grade, is formed in an outer region of the protective layer 36.

[0058] Fig.Figure 8 shows a flowchart of an embodiment of a method for producing a protective layer 36 of an optoelectronic component 10, for example one of the protective layers 36 described above. The method serves to form the protective layer 36 such that it has two, three or more sections 40, 42, 46 side by side in the lateral direction, which have different degrees of hardness.

[0059] In step S2, a starting material for forming the protective layer 36 is applied, for example to the encapsulation layer 24. The starting material can be, for example, liquid or viscous.

[0060] In step S4, the starting material is hardened, at least in the first section 40. Hardening can be achieved, for example, by irradiating the starting material, such as with UV light. Alternatively, hardening can be carried out using a mask designed such that the first sections 40 are exposed in recesses of the mask and that the second sections 42 are covered by the mask.

[0061] Optionally, in step S4, the starting material can also be cured in the second section 42, ensuring that after curing, the protective layer 36 in the first section 40 has a higher degree of hardness than in the second section 42. This can be achieved, for example, using a mask-based irradiation process with a mask exhibiting different transmissivities in different areas. For instance, the mask can be designed such that the first sections 40 are exposed in the recesses of the mask, while the second sections 42 are covered by areas of the mask that have a limited, but not negligible, transmissivity for irradiation compared to the exposed areas. Alternatively, the starting material can remain uncured in the second section 42.

[0062] If the starting material is not hardened in step S4 of the second section 42, but is to be hardened, it can be hardened in an optional step S6 in the second section 42. The hardening of the starting material in the second section 42 can be carried out, for example, by means of a mask-based irradiation process, whereby the irradiation duration and / or irradiation intensity are lower than when hardening the starting material in the first section 40, so that the second hardness grade after hardening is lower than the first.

[0063] The invention is not limited to the embodiments and examples shown. For example, the optoelectronic components 10 shown can have fewer or more layers, for example, the carrier 12 and / or the cover body 38 can be omitted, and / or layers for influencing electromagnetic radiation and / or layers for converting light with respect to its wavelength can be formed. Furthermore, sections 40, 42, 46 can have shapes other than those shown. Furthermore, more sections 40, 42, 46 than shown can be formed. REFERENCE MARK LIST 10 Optoelectronic component 12 carriers 14 first electrode layer 16 first contact section 18 second contact section 20 first electrode 21 Insulation barrier 22 organic functional layer structure 23 second electrode 24 Encapsulation layer 32 first contact area 34 second contact area 36 protective layer 38 cover bodies 40 first section 42 second section 44 Preferred bending direction 46 third section S2, S4, S6 steps

Claims

[1] Optoelectronic component (10), with a first electrode (20), an organic functional layer structure above the first electrode (20), a second electrode (23) above the organic functional layer structure (22), an encapsulation layer (24) over the second electrode (23), and a protective layer (36) formed over the encapsulation layer, which has at least a first section (40) in which the material of the protective layer (36) has a first modulus of elasticity, and which has at least a second section (42) formed laterally next to the first section (40) in which the material of the protective layer (36) has a second modulus of elasticity which is smaller than the first modulus of elasticity, wherein the protective layer (36) has at least one third section (46) which is formed in the lateral direction next to the first section (40) and / or next to the second section (42) and which has a third modulus of elasticity that is different from the first modulus of elasticity and the second modulus of elasticity. [2] Optoelectronic component (10) according to claim 1, wherein the material with the first modulus of elasticity and the material with the second modulus of elasticity are formed from the same starting material. [3] Optoelectronic component (10) according to one of the preceding claims, wherein the first section (40) forms a laterally outer region of the protective layer (36) and wherein the second section (42) forms a laterally inner region of the protective layer (36). [4] Optoelectronic component (10) according to claim 1 or 2, wherein the second section (42) forms a laterally outer region of the protective layer (36) and wherein the first section (40) forms a laterally inner region of the protective layer (36). [5] Optoelectronic component (10) according to one of the preceding claims, which is designed to be mechanically flexible and / or non-destructively bendable. [6] Optoelectronic component (10) according to claim 5, which has a preferred bending direction (44), wherein the sections (40, 42, 46) are designed depending on the preferred bending direction (44) such that they favor the preferred bending direction (44). [7] Optoelectronic component (10) according to one of the preceding claims, wherein the sections (40, 42, 46) are at least partially formed in the form of parallel strips. [8] Optoelectronic component (10) according to claims 6 and 7, wherein the strips are formed perpendicular to the preferred bending direction (44). [9] Optoelectronic component (10) according to one of the preceding claims, wherein the protective layer (36) is designed as an adhesive layer. [10] Optoelectronic component (10) according to one of the preceding claims, wherein the protective layer (36) has the same or at least approximately the same thickness over its entire lateral extent. [11] Method for manufacturing an optoelectronic device (10) wherein a first electrode (20) is provided, an organic functional layer structure (22) is formed over the first electrode (20), a second electrode (23) is formed above the organic functional layer structure (22), an encapsulation layer (24) is formed over the second electrode (23), and a protective layer (36) is formed on the encapsulation layer (24) such that the protective layer (36) has a first modulus of elasticity in at least a first section (40) and has a second modulus of elasticity in at least a second section (42), which is formed laterally next to the first section (40), which is smaller than the first modulus of elasticity, wherein the protective layer (36) is designed such that it has at least a third section (46) which is formed in a lateral direction next to the first section (40) and / or next to the second section (42) and which has a third modulus of elasticity that differs from the first modulus of elasticity and the second modulus of elasticity. [12] Method according to claim 11, wherein to form the protective layer (36) a starting material is applied to the encapsulation layer (24) which extends over the first section (40) and the second section (42), and the starting material is cured at least in the first section (40). [13] Method according to claim 12, wherein the starting material is hardened in the second section (42) to form the protective layer (36). [14] Method according to any one of claims 11 to 13, wherein the first section (40) is formed in a lateral direction outside the second section (42) or the first section (40) is formed in a lateral direction inside the second section (42).

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