Performance module

Abstract

Power module, featuring: • a housing (1); • a power component (2) arranged within the housing (1) which has a plurality of semiconductor switching elements (2c) forming an upper branch and a lower branch between a first connection point (2a) and a second connection point (2b), wherein the upper branch and the lower branch which have the plurality of semiconductor switching elements (2c) are contained for individual phases; • a positive terminal (3p) which is set up to lead the first connection points (2a) of the power component (2) out of the housing (1) via a first line (4a); • a negative terminal (3n) which is configured to lead the second terminals (2b) of the power component (2) out of the housing (1) via a second conductor (4b); and, for each individual phase: • an additional third conductor (7a) having a first end electrically connected to the first connection point (2a) and a second end located outside the housing (1), wherein the third conductor (7a) is shorter than the first conductor (4a); and • an additional fourth conductor (7b) having a first end electrically connected to the second connection point (2b) and a second end outside the housing (1), wherein the fourth conductor (7b) is shorter than the second conductor (4b); • an additional fifth conductor (8a) with a first end connected to the third conductor (7a) and a second end outside the housing (1); • an additional sixth conductor (8b) with a first end connected to the fourth conductor (7b) and a second end outside the housing (1); and • a damping capacitor (6) which is attachable to and detachable from the second ends of the third line (7a) and the fourth line (7b), wherein • the fifth line (8a) and the sixth line (8b) are set up to allow monitoring of a voltage surge in the individual branches in the individual phases.

Description

Background of the invention; Field of the invention

[0001] The present invention relates to power modules with housings. Description of the technological background

[0002] Conventional power modules are described in US 2002 / 0 196 609 A1, DE 11 2011 103 941 T5 and DE 10 2011 076 324 A1.

[0003] Several techniques have been proposed for power modules designed to quickly switch high currents. One example of such a technique involves a power module incorporating an embedded capacitor, as proposed in JP 2009-225 612 A. In this configuration, a damping capacitor is connected to reduce or eliminate voltage surges by being adjacent to the semiconductor switching elements (upper and lower branches) of individual sets. This allows for appropriate voltage surge reduction.

[0004] Since the voltage surge varies depending on the user's specific application of the module, the capacitance of the damping capacitor must be optimized for each application scenario to adequately reduce the surge. Furthermore, because capacitors tend to have varying capacitances with temperature, the capacitor within the module is also prone to fluctuating capacitances due to heat generated by the chips. This is particularly noticeable with a capacitor made of a material with a high dielectric constant (high dielectric strength), as the capacitance of such a capacitor is highly susceptible to temperature changes. Therefore, the capacitor may not maintain a consistently high enough capacitance to effectively reduce the voltage surge.Unfortunately, this can cause the voltage surge to increase to such an extent that it exceeds a component breakdown voltage.

[0005] To solve this problem, a capacitor with a high capacitance can be pre-installed in the module, taking into account variations in its capacitance. However, this requires more space within the module than necessary, resulting in higher costs and a larger device.

[0006] Furthermore, the high-density dielectric used for the capacitor is a sintered material; and it is difficult to sinter the capacitor's dielectric along with lead at high temperatures. Therefore, it is not possible to use a damping capacitor with sufficient capacitance to reduce the voltage surge. Adversely, this may cause the voltage surge to exceed the component's breakdown voltage. Summary of the invention

[0007] The present invention was made in light of these problems. It is an object of the present invention to provide a technique in which a damping capacitor with a suitable capacitance can be used.

[0008] This problem is solved by the features of the independent claim. The dependent claims contain advantageous embodiments of the invention.

[0009] A power module according to one aspect of the present invention comprises a housing, a power component, a positive terminal, a negative terminal, a third lead shorter than a first lead, and a fourth lead shorter than a second lead. The power component is arranged within the housing. The power component comprises a plurality of semiconductor switching elements forming an upper branch and a lower branch between a first terminal and a second terminal. The positive terminal is configured to extend the first terminal of the power component out of the housing via the first lead. The negative terminal is configured to extend the second terminal of the power component out of the housing via the second lead. The third lead has a first end that is electrically connected to the first terminal and a second end that is located outside the housing.The fourth conductor has one end electrically connected to the second connection point and a second end located outside the housing. A damping capacitor can be attached to and detached from the second ends of the third and fourth conductors.

[0010] The damping capacitor with the appropriate capacitance can be used.

[0011] These and other tasks, features, aspects and advantages of the present invention will become clearer from the following detailed description of the present invention in conjunction with the accompanying drawings. Short description of the drawings Fig. Figure 1 is a sectional drawing showing the structure of a generic power module; Fig. 2 is a sectional drawing showing the structure of a power module according to a first example; Fig. Figure 3 is a sectional drawing showing the construction of a power module according to a second example; Fig. 4 is a sectional drawing showing the construction of a power module according to a first embodiment; Fig. Figure 5 is a sectional drawing showing the construction of a power module according to a second preferred embodiment; Fig. Figure 6 is a sectional drawing showing the structure of a power module according to a third example; Fig. Figure 7 is a sectional drawing showing the construction of a power module according to a third preferred embodiment; Fig. Figure 8 is a sectional drawing showing the construction of a power module according to a fourth example; Fig. Figure 9 is a sectional drawing showing the construction of a power module according to a fourth preferred embodiment; and Fig. Figure 10 is a sectional drawing showing the construction of a power module according to a fifth example. Description of the preferred embodiments

[0012] The following describes preferred embodiments of the invention and further examples with reference to the accompanying drawings. The drawings are schematic. Therefore, the relationships between the sizes and positions of components shown individually in the various drawings are not necessarily accurate and may be modified accordingly. <Gattungsgemäßes Leistungsmodul>

[0013] First, a power module related to power modules according to the preferred embodiments (hereinafter referred to as the generic power module) is described below, before a description of the power modules according to the preferred embodiments of the present invention is given.

[0014] Fig. Figure 1 is a sectional drawing showing the structure of the generic power module. Fig. 1 The generic power module comprises a housing 1, a power component 2, a positive terminal 3p, a negative terminal 3n, a first line 4a, a second line 4b, a circuit board 5 and a damping capacitor 6.

[0015] The power component 2 is located inside the housing 1. Although not shown, the housing 1 may also contain other components and circuits.

[0016] In Fig. 1 comprises the power component 2: a plurality of semiconductor switching elements 2c forming an upper branch and a lower branch between a first terminal point 2a and a second terminal point 2b; and a plurality of diodes 2d connected in parallel to the respective semiconductor switching element 2c. In the example from Fig. 1. An emitter of the semiconductor switching element 2c in the upper branch is connected to a collector of the semiconductor switching element 2c in the lower branch. Furthermore, a collector of the semiconductor switching element 2c in the upper arm is connected to the first terminal point 2a. Additionally, an emitter of the semiconductor switching element 2c in the lower arm is connected to the second terminal point 2b.

[0017] The generic power module is designed such that the upper branch and the lower branch, which comprise the plurality of semiconductor switching elements 2c, are available for individual phases. In the example from Fig. 1. Power component 2 is a power component for driving a three-phase motor, comprising semiconductor switching elements 2c of six circuits (three upper branches and three lower branches). Power component 2 has a positive potential and a negative potential, which are common to the three upper branches and the three lower branches.

[0018] It should be noted that the semiconductor switching elements 2c can each comprise an insulated-gate bipolar transistor (IGBT) or a metal-oxide-semiconductor field-effect transistor (MOSFET). The diodes 2d can each comprise a Schottky barrier diode (SBD) or a PN diode. The power component 2 can be made of silicon (Si) or can comprise a wide-bandgap semiconductor made of a material such as silicon carbide (SiC), gallium nitride (GaN), or diamond. The generic power module with such a configuration is suitable for stable operation at high temperatures and has a higher switching speed.

[0019] The positive terminal 3p carries the first connection points 2a (positive potential) of the power component 2 out of the housing 1 via the first conductor 4a. The negative terminal 3n carries the second connection points 2b (negative potential) of the power component 2 out of the housing 1 via the second conductor 4b. It should be noted that the positive terminal 3p can be used as one end of the first conductor 4a and the negative terminal 3n can be used as one end of the second conductor 4b, as shown in Fig. 1 shown.

[0020] The printed circuit board 5 includes circuits (not shown), such as a control and / or regulation circuit, a drive circuit, and a protection circuit. Although not shown, the circuit on printed circuit board 5 may be electrically connected to a component, such as the power component 2.

[0021] The damping capacitor 6 is suitable for reducing or eliminating a voltage surge in the power component 2. In this configuration, the damping capacitor 6 is securely connected to the positive terminal 3p and the negative terminal 3n of the generic power module. The generic power module is designed such that some of its branches are located far from the positive terminal 3p and the negative terminal 3n, and thus have a considerable distance from the damping capacitor 6. This configuration prevents the damping capacitor 6 from sufficiently reducing the voltage surge. To reduce the voltage surge, a power module with an embedded damping capacitor has been proposed (for example, JP 2009 - 225 612 A).

[0022] Since capacitors tend to have varying capacitances depending on temperature changes, the damping capacitor within the power module is also prone to varying capacitances due to heat generation from the chips. Therefore, the damping capacitor does not consistently possess a sufficient capacitance to reduce the voltage surge. Disadvantageously, this may cause the voltage surge to increase to the point where it exceeds a component breakdown voltage. In contrast, the power modules described below, according to embodiments 1 to 9 of the present invention, solve this problem. <Erstes Beispiel>

[0023] Fig. Figure 2 is a sectional drawing showing the structure of a power module according to a first example. Components described in this first example that are the same as or similar to those of the generic power module are identified with the same reference symbols. The following mainly describes components that are different from those of the generic power module.

[0024] Like the generic performance module, the performance module comprises Fig. 2 a housing 1, a power component 2, a positive terminal 3p, a negative terminal 3n, a first line 4a, a second line 4b and a circuit board 5.

[0025] As with the generic power module, the power component 2 comprises Fig. 2. A plurality of semiconductor switching elements 2c and a plurality of diodes 2d. The plurality of semiconductor switching elements 2c form an upper branch and a lower branch. The upper branch and the lower branch are provided for individual phases. Furthermore, the positive terminal 3p carries the first connection points 2a (positive potential) of the power component 2 out of the housing 1 via the first line 4a. The negative terminal 3n carries the second connection points 2b (negative potential) of the power component 2 out of the housing 1 via the second line 4b.

[0026] The performance module here comprises Fig. 2 third lines 7a and fourth lines 7b, which are used for connecting, in addition to the components described above.

[0027] Every third conductor 7a has one end electrically connected to the respective first connection point 2a and the other end outside the housing 1. Furthermore, every third conductor 7a is shorter than the first conductor 4a. Similarly, every fourth conductor 7b has one end electrically connected to the respective second connection point 2b and the other end outside the housing 1. Furthermore, every fourth conductor 7b is shorter than the second conductor 4b. Additionally, every third conductor 7a can have one end directly connected to the corresponding first connection point 2a, although Fig. Figure 2 shows that the third line 7a is not connected accordingly. Similarly, each fourth line 7b can be directly connected at one end to the respective second connection point 2b, although Fig. Figure 2 shows that the fourth line 7b is not connected correctly.

[0028] In the first example, a corresponding damping capacitor 6 can be attached to and detached from the other ends of the third line 7a and fourth line 7b, the other ends being located outside the housing 1. Examples of different attachment and detachment structures include a plug socket, described in a fifth example, and a screw stud, which is not shown.

[0029] The power module according to this example is designed such that the third lines 7a and the fourth lines 7b are relatively short. Therefore, the damping capacitors 6 are connected to reduce or eliminate the voltage surge in close proximity to the semiconductor switching elements 2c. This enables an appropriate reduction of the voltage surge. Furthermore, the power module is designed such that the damping capacitors 6 can be attached to and detached from the other ends of the third lines 7a and fourth lines 7b. This configuration allows the damping capacitors 6 to be replaced by other damping capacitors 6 with a suitable capacitance and size. This enables an appropriate reduction or elimination of the voltage surge and also results in a cost reduction and a smaller device.

[0030] The power module according to this example is configured such that the upper and lower branches, which have the plurality of semiconductor switching elements 2c between the respective terminal point 2a and the respective second terminal point 2b, are provided for the individual phases. Such a configuration allows the semiconductor switching elements 2c in each phase to be connected to the damping capacitor 6. Consequently, the voltage surge in each phase is reduced or eliminated.

[0031] In the first example, the housing 1 has a surface with recesses 1a in which the damping capacitors 6 are received, when the damping capacitors 6 are attached to the other ends of the third lines 7a and fourth lines 7b, as shown in Fig. Figure 2 shows that such a configuration allows the damping capacitors 6 to be connected in close proximity to the semiconductor switching elements 2c. This further reduces the voltage surge. Furthermore, this configuration allows the circuit board 5 to be mounted on the housing 1 without interference from the damping capacitors 6. <Zweites Beispiel>

[0032] Fig. Figure 3 is a sectional drawing showing the structure of a power module according to a second example. Among the components described in the second example, those that are the same as or similar to those of the power module in the first example are marked with the same reference symbols. The following mainly describes components that differ from those of the power module in the first example.

[0033] In the second example, the housing 1 has a surface with projections 1b instead of recesses 1a. Here, the projections 1b protrude parallel to the damping capacitors 6 when the damping capacitors 6 are connected to the other ends of the third lines 7a and fourth lines 7b.

[0034] The power module according to the second example achieves the same advantages as those of the first example. In the second example, the projections 1b allow the spacing to be maintained at a desired height. This configuration allows the power module to have an interior space in which the damping capacitors 6 are housed. Consequently, the damping capacitors 6 are connected closer to the semiconductor switching elements 2c. Therefore, the voltage surge is further reduced. Furthermore, this configuration allows the printed circuit board 5 to be mounted on the housing 1 without interference from the damping capacitors 6. <Erstes bevorzugtes Ausführungsbeispiel>

[0035] Fig. Figure 4 is a sectional drawing showing the structure of a power module according to a first preferred embodiment of the invention. Among the components described in the first embodiment, those components that are the same as or similar to those of the power module of the first example are identified with the same reference numerals. The following mainly describes components that differ from those of the power module of the first example.

[0036] The power module according to the first preferred embodiment comprises fifth lines 8a and sixth lines 8b for monitoring the voltage surge in addition to the components of the first example ( Fig. 2).

[0037] Each fifth conductor 8a has one end connected to the respective third conductor 7a and the other end outside the housing 1. Similarly, each sixth conductor 8b has one end connected to the respective fourth conductor 7b and the other end outside the housing 1. Furthermore, a monitoring device suitable for monitoring the voltage surge is attachable to and detachable from the other ends of the fifth conductor 8a and sixth conductor 8b, the other ends of which are located outside the housing 1.

[0038] The power module according to the first preferred embodiment achieves the same advantages as those of the first example. Furthermore, in the first preferred embodiment, the fifth lines 8a and sixth lines 8b enable the voltage surge in the individual branches to be monitored. This allows verification of whether the voltage surge in the individual branches is reduced by a certain amount. <Zweites bevorzugtes Ausführungsbeispiel>

[0039] Fig. Figure 5 is a sectional drawing showing the structure of a power module according to a second preferred embodiment. Among the components described in the second preferred embodiment, those components that are the same as or similar to those of the preceding power module are identified by the same reference numerals. The following mainly describes components that differ from those of the preceding power modules.

[0040] The power module according to the second preferred embodiment comprises the fifth lines 8a and sixth lines 8b ( Fig. 4), which are the same as those of the first preferred embodiment, in addition to the components of the second example ( Fig. 3).

[0041] The power module according to the second preferred embodiment achieves the same advantages as those of the second embodiment. Furthermore, in the fourth preferred embodiment, the fifth lines 8a and sixth lines 8b enable the voltage surge in the individual branches to be monitored, as in the first preferred embodiment. This allows verification of whether the voltage surge in the individual branches is reduced by a certain amount. <Drittes Beispiel>

[0042] Fig. Figure 6 is a sectional drawing showing the structure of a power module according to a third example. Among the components described in the third example, those that are the same as or similar to those of the preceding power modules are marked with the same reference symbols. The following mainly describes components that differ from those of the preceding power module.

[0043] Unlike the power component 2 according to the first example ( Fig. 2) According to the third example, the power component 2 comprises semiconductor switching elements 2c of two circuits (an upper branch and a lower branch), wherein the power component 2 is adapted to a high electrical power. In the example from Fig. In Figure 6, the power component 2 comprises three (a first group of) semiconductor switching elements 2c connected in parallel, and a further three (a second group of) semiconductor switching elements 2c connected in parallel within a unit of a block 2e (block unit). It should be noted that in the third example, the block unit 2e is a unit of an insulating substrate (not shown) to which six semiconductor switching elements 2c are attached.

[0044] In the third example, the first group of semiconductor switching elements 2c and the second group of semiconductor switching elements 2c form the upper branch and the lower branch between the first connection points 2a and the second connection points 2b.

[0045] The power module according to the third example achieves the same advantages as those of the first example, although the power component 2 is a high-power component comprising a multitude of chips connected in parallel. In particular, the power component 2 of the third example is configured such that, for example, a chip is located at the left end of Fig. 6 and a chip at the right end of Fig. The 6 points are separated by a relatively large distance. This makes it difficult to sufficiently reduce the voltage surge. Therefore, the advantage described in the first example (i.e., the reduction of the voltage surge) is effective.

[0046] In the third example, the block unit is the unit of the insulating substrate to which the chips are attached. This reduces differences between insulating substrates with respect to the advantage, i.e., the reduction of voltage surge. <Drittes bevorzugtes Ausführungsbeispiel>

[0047] Fig. Figure 7 is a sectional drawing showing the structure of a power module according to a third preferred embodiment of the invention. Among the components described in the third preferred embodiment, those components that are the same as or similar to those of the preceding power modules are identified by the same reference numerals. The following mainly describes components that differ from those of the preceding power modules.

[0048] The power module according to the third preferred embodiment comprises the fifth lines 8a and sixth lines 8b, which are the same as those of the first preferred embodiment ( Fig. 4) are, in addition to the components of the third example ( Fig. 6).

[0049] The power module according to the third preferred embodiment achieves the same advantages as those of the third example. Furthermore, in the third preferred embodiment, the fifth lines 8a and sixth lines 8b enable the voltage surge in the individual branches to be monitored, as in the first preferred embodiment. This allows verification of whether the voltage surge in the individual branches is reduced by a certain amount. <Viertes Beispiel>

[0050] Fig. Figure 8 is a sectional drawing showing the structure of a power module according to the fourth example. Among the components described in the fourth example, those that are the same as or similar to those of the power modules in the first example are marked with the same reference symbols. The following mainly describes components that differ from those of the power module in the first example.

[0051] The power module according to the fourth example comprises dielectric layers 9 in addition to the components of the first example. In the fourth example, the first conductor 4a and the second conductor 4b are adjacent to each other. Furthermore, the dielectric layers 9 are arranged between the first conductor 4a and the second conductor 4b.

[0052] In the example from Fig. In Figure 8, the first conductor 4a has first sections 4a1 and the second conductor 4b has second sections 4b1. Each first section 4a1 and each second section 4b1 are adjacent to each other. Each first section 4a1 is located between a respective third connection point 4a2 and the respective first connection point 2a, with the first conductor 4a and the respective third conductor 7a being connected at the third connection point 4a2. Similarly, each second section 4b1 is located between a respective fourth connection point 4b2 and the respective second connection point 2b, with the second conductor 4b and the respective fourth conductor 7b being connected at the fourth connection point 4b2. Furthermore, the dielectric layers 9 are arranged between the first sections 4a1 of the first conductor 4a and the second sections 4b1 of the second conductor 4b.

[0053] The power module according to the fourth example achieves the same advantages as those of the first example. In addition, in the fourth example, the first line 4a and the second line 4b are adjacent to each other. In such a configuration, the first line 4a and the second line 4b allow a capacitor to be placed essentially adjacent to the power component 2. This results in advantages such as the use of a damping capacitor 6 with a low capacitance, or the further reduction or elimination of voltage surges.

[0054] In the fourth example, the dielectric layers 9 allow the capacitor adjacent to the power component 2 to have a high capacitance. This offers the advantage that, for example, the damping capacitor 6 has a low capacitance, or the voltage surge is further reduced or eliminated.

[0055] It should be noted that in the fourth example, every third conductor 7a and every fourth conductor 7b can be adjacent to each other. It should also be noted that a dielectric layer can be arranged between the third conductor 7a and the fourth conductor 7b. In such a configuration, the power module achieves the same advantage as those described previously. In the description above, the fourth example is applied to the first example, but is not limited to it. For example, the fourth example can be applied to the second and third examples. <Viertes bevorzugtes Ausführungsbeispiel>

[0056] Fig. Figure 9 is a sectional drawing showing the structure of a power module according to a fourth preferred embodiment. Among the components described in the fourth preferred embodiment, those components that are the same as or similar to those of the power modules of the first preferred embodiment and the fourth embodiment are identified by the same reference numerals. The following mainly describes components that differ from those of the power modules of the first preferred embodiment and the fourth embodiment.

[0057] The power module according to the fourth preferred embodiment comprises the fifth lines 8a and sixth lines 8b, which are the same as those of the first preferred embodiment ( Fig. 4) are, in addition to the components of the fourth example ( Fig. 8).

[0058] As in the first preferred embodiment, the power module according to the fourth preferred embodiment is configured such that the fifth lines 8a and the sixth lines 8b allow the voltage surge of individual branches to be monitored. This enables verification of whether the voltage surge of the individual branches is reduced by a certain amount. Furthermore, as in the fourth embodiment, the power module according to the fourth preferred embodiment has an advantage, such as the low-capacitance damping capacitor 6, or the further reduction or elimination of the voltage surge. <Fünftes Beispiel>

[0059] Fig.Figure 10 is a sectional drawing showing the structure of a power module according to the fifth example. Among the components described in the fifth example, those components that are the same as or similar to those of the power module in the first example are marked with the same reference symbols.

[0060] The following mainly describes components that differ from those of the power module in the first example.

[0061] In the fifth example, every third wire 7a has a female socket 7a1 at its other end. A male connector 6a of the respective damping capacitor 6 can be attached to and detached from the respective socket 7a1. Furthermore, every fourth wire 7b has a female socket 7b1 at its other end. Another male connector 6a of the damping capacitor 6 can be attached to and detached from the respective socket 7b1.

[0062] The power module according to the fifth example is designed such that the plugs 6a of the damping capacitor 6 are inserted into the respective sockets 7a1 and 7b1, so that the damping capacitors 6 are connected to the third lines 7a and the fourth lines 7b. Consequently, this allows the damping capacitors 6 to be replaced without soldering, thus providing an easy-to-use power module.

[0063] In the description above, the fifth example is applied to the first example, but is not limited to it. For example, the fifth example can be applied to the third and fourth preferred embodiments and to the fourth example.

[0064] It is noted that in the present invention, the respective preferred embodiments and examples can be combined within the scope of the invention. Reference symbol list 1 housing 1a Advanced 1b advantage 2 Power component 2a first connection point 2b second connection point 2c Semiconductor switching element 2D diode 2nd block unit 3n negative terminal 3p positive connection 4a first line 4a1 first section 4a2 third connection point 4b second line 4b1 second section 4b2 fourth connection point 5 circuit board 6 Damping capacitor 6a plug 7a third line 7a1 socket 7b fourth line 7b1 socket 8a fifth line 8b sixth line 9 dielectric layer

Claims

[1] Power module, comprising: • a housing (1); • a power component (2) arranged within the housing (1) and having a plurality of semiconductor switching elements (2c) forming an upper branch and a lower branch between a first connection point (2a) and a second connection point (2b), the upper branch and the lower branch having the plurality of semiconductor switching elements (2c) being included for individual phases; • a positive terminal (3p) which is configured to lead the first connection points (2a) of the power component (2) out of the housing (1) via a first line (4a); • a negative terminal (3n) configured to lead the second connection points (2b) of the power component (2) out of the housing (1) via a second line (4b); and, for each individual phase: • an additional third line (7a) having a first end electrically connected to the first connection point (2a) and a second end located outside the housing (1), the third line (7a) being shorter than the first line (4a); and • an additional fourth line (7b) having a first end electrically connected to the second connection point (2b) and a second end located outside the housing (1), the fourth line (7b) being shorter than the second line (4b); • an additional fifth line (8a) having a first end connected to the third line (7a) and a second end outside the housing (1); • an additional sixth line (8b) having a first end connected to the fourth line (7b) and a second end outside the housing (1); and • a damping capacitor (6) which is attachable to and detachable from the second ends of the third line (7a) and the fourth line (7b), wherein • the fifth line (8a) and the sixth line (8b) are arranged to enable monitoring of a voltage surge in the individual branches in the individual phases. [2] Power module according to claim 1, wherein the power component (2) comprises, in a block unit (2e), a first group of the plurality of semiconductor switching elements (2c) connected in parallel to one another and a second group of the plurality of semiconductor switching elements (2c) connected in parallel to one another, and wherein the first group of the plurality of semiconductor switching elements (2c) and the second group of the plurality of semiconductor switching elements (2c) form an upper branch and a lower branch between the first connection point (2a) and the second connection point (2b). [3] The power module according to claim 2, wherein the block unit (2e) is a unit made of an insulating substrate to which the plurality of semiconductor switching elements (2c) are attached. [4] Power module according to one of claims 1 to 3, wherein the first line (4a) and the second line (4b) are adjacent to each other. [5] The power module according to claim 4, further comprising a dielectric layer (9) disposed between the first line (4a) and the second line (4b). [6] Power module according to one of claims 1 to 5, wherein the third line (7a) and the fourth line (7b) have sockets (7a1, 7b1) at the second ends of the third line (7a) and the fourth line (7b), and wherein plugs (6a) of the damping capacitor (6) are attachable to and detachable from the sockets (7a1, 7b1). [7] The power module according to any one of claims 1 to 6, wherein the housing (1) has a surface with a recess (1a) in which the snubber capacitor (6) is received when the snubber capacitor (6) is attached to the second ends of the third lead (7a) and the fourth lead (7b). [8] The power module according to any one of claims 1 to 6, wherein the housing (1) has a surface with a projection (1b) that is parallel to the snubber capacitor (6) when the snubber capacitor (6) is attached to the second ends of the third lead (7a) and the fourth lead (7b). [9] Power module according to one of claims 1 to 8, wherein the power component (2) comprises a wide band gap semiconductor.

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