Method for manufacturing a component

Abstract

A method (1000) for manufacturing a component (100) comprises a provisioning step, an assembly step, and an ignition step. In the provisioning step, a semiconductor device (105), a printed circuit board (110), a reactive layer (115), and a barrier device (120) are provided. In the assembly step, the semiconductor device (105), the printed circuit board (110), the reactive layer (115), and the barrier device (120) are assembled, the reactive layer (115) being positioned between the semiconductor device (105) and the printed circuit board (110). The barrier device (120) is positioned on the printed circuit board (110) or the semiconductor device (105), the barrier device (120) at least partially surrounding the reactive layer (115).In the ignition step, the reactive layer (115) is ignited to electrically contact the semiconductor device (105) and the circuit board (110), with the barrier device (120) serving as splash protection.

Description

[0001] The present invention relates to a method for producing a component using a reactive multilayer system and to a component.

[0002] A reactive multilayer system can be used to join elements.

[0003] State of the art is disclosed in DE 11 2008 002 377 T5, US 2007 / 0 257 364 A1 and US 2007 / 0 224 441 A1.

[0004] Against this background, the present invention provides an improved method for producing a component according to the main claim. Advantageous embodiments emerge from the subclaims and the following description.

[0005] The main advantage of the approach presented here is that it enables good protection of the component against damage that may occur during manufacturing. This can improve the component's functionality and reduce defects.

[0006] A method for producing a component comprises a providing step, an assembling step, and an igniting step. In the providing step, a semiconductor component, a circuit board, a reactive layer, and a barrier device are provided. In the assembling step, the semiconductor component, the circuit board, the reactive layer, and the barrier device are joined together, wherein the reactive layer is arranged between the semiconductor component and the circuit board. The barrier device is arranged on the semiconductor component, wherein the barrier device at least partially surrounds the reactive layer. In the igniting step, the reactive layer is ignited to electrically contact the semiconductor component and the circuit board, wherein the barrier device serves as a splash guard.

[0007] The component can be an assembly of electrical components. The semiconductor device can be formed as a chip. The circuit board can, for example, have a copper substrate as its substrate. The reactive layer can be a multilayer system or multilayer system (RMS for short). Known reactive layers can be used. For example, the reactive layer can consist of several hundred periodically structured layers of two materials with individual layer thicknesses of a few nanometers. For example, the reactive layer can be implemented as a reactive multilayer system or a reactive multilayer film.The barrier device, which can also be referred to as a barrier wall or simply a barrier, can be shaped, for example, as a rigid or flexible frame and prevents drops or splashes of the reactive layer from hitting surrounding components, such as a circuit board, or other electrical connections of the same component when the reactive layer is ignited. Ignition can occur, for example, by a short-circuit current through the reactive layer, by ultrasonic ignition, or with a laser beam. The laser beam can be directed directly onto a section of the reactive layer. If the barrier device is made of a translucent material, the laser beam can also be directed through the barrier device onto the reactive layer.

[0008] The approach presented here can therefore also be understood as a method for preventing spatter during RMS metal bonding. The approach presented here can prevent spatter of the reactive layer during the firing step, thus enabling high-quality RMS bonding without damaging other components. This can improve the functionality of the component and, for example, prevent damage to the semiconductor device.

[0009] During the joining step, a gap can be arranged between the barrier device and the semiconductor component. This facilitates the igniting of the reactive layer. The reactive layer can be ignited with a laser beam, which can be directed onto the gap to ignite the reactive layer arranged in the gap.

[0010] In the assembly step, the barrier device is applied to the semiconductor component by means of a printing process or by growth, for example, sputtering. The printing process can be a process in which the barrier device is printed using a dispenser or a dam-and-fill process. Alternatively, the barrier device can be arranged using a pick-and-place process. The barrier device can be applied before or after the reactive layer and the semiconductor element are arranged. Alternatively, the barrier device can be applied after the reactive layer is arranged, but before the semiconductor component is arranged.

[0011] In the providing step, the barrier device may comprise a plastic material and / or foam material and / or metal as its material. The plastic material may be polyimide or another non-conductive material and / or elastomer. The material of the barrier device may be flexible or inflexible. For example, the barrier device may comprise an inflexible material if it consists of a 3D-printed plastic frame, which is simple and inexpensive. Alternatively, the barrier device may comprise a flexible material, such as rubber or foam, if a small excess of the reactive layer is required. The frame can then be easily positioned using standard pick-and-place methods.The material of the barrier device can, for example, be permeable to a laser beam, for example, if the barrier device is made of plastic or glass. The barrier device can be made of a material impermeable to laser beams, for example, plastic or metal, and can be removed or penetrated at one or more points during the laser beam ignition step.

[0012] During the assembly step, the barrier device can be arranged on the semiconductor component, wherein the barrier device can be arranged between the semiconductor component and the reactive layer. With this arrangement, the barrier device can be smaller than the semiconductor component. In this way, material for the barrier device can be saved. In particular, for example, less RMS foil may be required if it is smaller than, for example, the chip. This is advantageous because for some applications, e.g. flip-chip bonding, the RMS foil must be smaller than the chip. In addition, splashes of the reactive layer can be prevented from reaching the edges of the semiconductor component if the barrier device is smaller than the semiconductor component.

[0013] In the providing step, the semiconductor component can form at least one terminal. In the assembling step, the barrier device can surround the at least one terminal and / or be guided along a gap between a plurality of terminals. The semiconductor component can accordingly have a third terminal or more terminals, wherein the terminals can be arranged at a distance from one another. A diode as a semiconductor component, for example, has only one terminal on the structured top side and then another on the opposite bottom side. A transistor would typically have two terminals on the top side and then another on the opposite bottom side. These two terminals, e.g., gate and source in MOSFETs or gate and emitter in IGBTs, can now be designed differently, e.g., one gate pad and one source pad; or, four source pads surrounding one gate pad, etc.The barrier device can reliably surround the connections and electrically isolate them from each other.

[0014] The method may include a step of applying pressure to the semiconductor component to reduce a height of the barrier device in order to contact the semiconductor component, the reactive layer, and the circuit board. The pressure application step may be performed before the ignition step. In this way, the elements of the component can be reliably and safely contacted. The barrier device may, for example, comprise a flexible material, whereby the height of the barrier device can be reduced when the semiconductor component is subjected to pressure. The height can be reduced until the semiconductor component, the reactive layer, and the circuit board are in contact. Once the materials are in contact, the reactive layer can be ignited.

[0015] During the assembly step, the reactive layer can be grown on the semiconductor component. More specifically, a reactive nanoscale layer can be grown on the semiconductor component. This saves material for the reactive layer, thereby reducing costs. Furthermore, accuracy can be greatly increased and the process optimized.

[0016] During the provision step, the reactive layer and the barrier device can have an identical height. Alternatively, the barrier device can have a lower height than the reactive layer. The barrier device can reliably protect the surrounding components from splashes and drops of the reactive layer.

[0017] In the providing step, the barrier device can have at least one through-opening. The through-opening can be formed as a hole, a slot, or a gap. The barrier device can have at least one further through-opening. The reactive layer can be flush with the through-opening. According to one embodiment, the reactive layer cannot extend into the through-opening. In this arrangement, the reactive layer can be ignited with a laser beam or another contact method. For example, a laser beam can be directed laterally through the through-opening onto the reactive layer to ignite the reactive layer.

[0018] During the joining step, the reactive layer can be passed through the through-hole. This allows excess reactive layer to be extruded through the through-hole. The reactive layer can be ignited at the excess, for example, with a laser beam or another ignition method.

[0019] The method may include a step of removing the barrier device after the ignition step. The barrier device may be removed after the reactive multilayer system has been ignited. Thus, the barrier device can be reused, saving costs and materials.

[0020] During the joining step, the distance between the reactive layer and the barrier device can be less than one millimeter. The barrier device can thus protect the surrounding components from drops and / or splashes of the reactive layer.

[0021] In principle, a component is possible that comprises a semiconductor component, a circuit board, a reactive layer, and a barrier device. The reactive layer is arranged between the semiconductor component and the circuit board, the barrier device is arranged on the semiconductor component, and the barrier device at least partially surrounds the reactive layer to serve as a splash guard when the reactive layer is ignited. Such a component can advantageously be manufactured using a method mentioned above.

[0022] After the reactive layer is ignited, the semiconductor component and the circuit board can be electrically contacted via the ignited reactive layer.

[0023] The invention is explained in more detail by way of example with reference to the accompanying drawings. They show: Fig. 1 a schematic representation of an embodiment of a component; Fig. 2 a schematic sectional view of an embodiment of a component; Fig. 3 a schematic sectional view of an embodiment of a component; Fig. 4 a schematic representation of an embodiment of a semiconductor component; Fig. 5 is a schematic diagram of an embodiment of a semiconductor device; Fig. 6 a schematic representation of an embodiment of a component; Fig. 7 a schematic representation of an embodiment of a component; Fig. 8 a schematic representation of an embodiment of a component; Fig. 9 is a schematic plan view of an embodiment of a component; and Fig. 10 a flowchart of an embodiment of a method for producing a component.

[0024] The invention is explained in more detail by way of example with reference to the accompanying figures. These exemplary embodiments are for illustrative purposes only and may also include features that are not part of the inventive features claimed in the patent claims.

[0025] In the following description of preferred embodiments, the same or similar reference numerals are used for the elements shown in the various figures and having a similar effect, whereby a repeated description of these elements is omitted.

[0026] Fig. 1 shows a schematic representation of an embodiment of a component 100. More specifically, the component 100 is shown in a plan view.

[0027] The component 100 comprises a semiconductor component 105, a circuit board 110, a reactive layer 115 and a barrier device 120.

[0028] The reactive layer 115 can also be referred to as a reactive multilayer system and is implemented, for example, as a reactive multilayer film or as a grown layer that, upon ignition, provides immediate heat for a variety of applications, here, for example, for creating a mechanical and electrically conductive connection between the semiconductor component 105 and the circuit board 110. This reactive layer 115 is produced by growing thousands of alternating nanoscale layers, for example, made of aluminum and nickel. Activation of the reactive layer 115 is triggered by a small local energy pulse from electrical, optical, or thermal sources. The reactive layer 115 reacts exothermically to generate precise local heat up to 1500 degrees Celsius in fractions of a second.The small local energy pulse that triggers the activation of the reactive layer 115 is provided, for example, by applying an electrical voltage directly to the reactive layer 115, for example using a battery, with a special laser directly onto the reactive layer 115, or by applying a direct heat source to the reactive layer 115.

[0029] The exothermic reaction during the activation / bonding process leads to rapid expansion of the reactive layer 115 and to droplets that may splash from the sides of the semiconductor device 105. To contact the reactive layer 115 and initiate the bonding / activation process, the reactive layer 115 is optionally slightly larger than the semiconductor device 105 itself. Optionally, pressure is applied to the semiconductor device 105 to establish a high-quality bond.

[0030] The solder drops resulting from the reaction of the reactive layer can cause unwanted short circuits on the circuit board 110 or even contact other components on the circuit board 110, such as other semiconductor devices, electronic components, or non-electronic components. This poses the risk of damage to the circuit board 110 or the surrounding components and can thus impair or destroy the functionality of the assembly.

[0031] Semiconductor components are typically bonded on their underside. On the top side of the semiconductor component, there is usually at least one pad, for example a diode, or several pads in a transistor, which do not extend across the entire width of the semiconductor component. The edge regions on the top side where there are no contact pads are not covered with solder, as this can impair the functionality of the semiconductor component. If the semiconductor component is bonded on the top side, which can be the case with certain materials such as gallium oxide, the splashing of solder drops is particularly critical. They can either damage the edge regions of the semiconductor component or cause unwanted short circuits between the pads. The barrier device 120 is therefore designed to protect the components from splashes of the reactive layer 115.

[0032] The reactive layer 115 is arranged between the semiconductor component 105 and the circuit board 110 and is configured to electrically contact the semiconductor component 105 and the circuit board 110. For this purpose, the reactive layer 115 is ignited. The igniting occurs, for example, by means of a short-circuit current through the reactive layer 115 or by means of a laser beam. Alternatively, the reactive layer 115 can be ignited in another way.

[0033] Ignition leads to heat release from the reactive layer 115, with the heat generated thereby leading to electrical contact between the semiconductor component 105 and the circuit board 110. As mentioned above, when the reactive layer 115 is ignited, drops or splashes from the reactive layer 115 can come into contact with components of the device 100 and thus damage them, such as the semiconductor component 105 and / or the circuit board 110. To prevent damage to the component 100, the barrier device 120 is arranged on the circuit board 110 according to the example shown here and surrounds the reactive layer 115. The barrier device 120 thus serves as splash protection when the reactive layer 115 is ignited. The barrier device 120 comprises a plastic material and / or foam material and / or metal as its material. Depending on requirements, the barrier device 120 can be flexible or inflexible.

[0034] According to the exemplary embodiment shown here, the semiconductor component 105 is square in shape. The reactive layer 115 has a larger footprint than the semiconductor component 105 and thus protrudes at least partially on an underside of the semiconductor component 105. The barrier device 120 is shaped, for example, as a square frame and completely or at least partially surrounds the reactive layer 115. Optionally, a gap 125 is arranged between the semiconductor component 105 and the barrier device 120. The gap 125 has a width of, for example, less than one millimeter.

[0035] Optionally, the barrier device 120 has at least one through-opening through which the reactive layer 115 can be passed. According to the exemplary embodiment shown, the reactive layer 115 has, merely by way of example, a projection 130, also referred to as excess, on each of two opposite sides. The projections 130 are passed through the barrier device 120 through two corresponding through-openings. The reactive layer 115 is ignited at these projections 130, for example, in order to electrically contact the semiconductor component 105 and the circuit board 110. Alternatively, at least one of the projections can be passed over the barrier device 120. In this case, the barrier device 120 can be designed without a through-opening.

[0036] In other words, the approach presented here effectively prevents splashes of the reactive layer 115 and thus prevents damage to other components. The basic principle is that the barrier device 120, which can also be referred to as a frame, is used around the semiconductor device 105, which can also be referred to as a chip, and the reactive layer 115, which can also be referred to as an RMS foil. The barrier device 120 serves as a barrier to stop the splashing solder drops. Depending on the semiconductor device 105 and whether the semiconductor device 105 is mounted on the top or bottom side, different approaches are possible.

[0037] The Fig. 1 to 3 show, for example, a connection of the semiconductor component 105 to an external barrier device 120, which can also be referred to as a splash barrier and / or splash protection frame, here for example on an underside of the semiconductor component 105.

[0038] By way of example, a flexible barrier device 120 is placed around the semiconductor component 105. Optionally, a small excess portion of the reactive layer 115 can protrude beneath the barrier device 120 to facilitate ignition. Since the excess portion is small, splashing is almost negligible. However, this is only optional, since ignition is also possible from the top side by contacting the area between the semiconductor component 105 and the barrier device 120, which completely prevents splashing.

[0039] According to one example, the barrier device 120 is printed onto the circuit board 110, which may also be referred to as a substrate, around the semiconductor device 105, for example, by dispensing or dam-and-fill methods. This step can be performed either before applying the reactive layer 115 and the semiconductor device 105, after applying the reactive layer 115 but before applying the semiconductor device 105, or after applying both the reactive layer 115 and the semiconductor device 105.

[0040] Instead of dispensing, the barrier device 120 can be manufactured from a non-flexible material, for example, a 3D-printed plastic frame, which is simple and inexpensive if no protrusion of the reactive layer 115 is required, or from a flexible material, for example, rubber or foam, if a small protrusion 130 of the reactive layer 115 is required. The frame can then be easily positioned using standard pick-and-place methods.

[0041] Instead of using a separate reactive layer 115, i.e., an RMS foil, the reactive layer 115 can also be applied, for example, grown, directly onto the semiconductor component 105. According to one embodiment, this is done by sputtering, for example, by reactive sputtering.

[0042] Fig. 2 shows a schematic sectional view of an embodiment of a component 100. The component 100 is similar to or corresponds to the component from Fig. 1.

[0043] The reactive layer 115 is arranged between the semiconductor component 105 and the circuit board 110. The barrier device 120 completely surrounds the semiconductor component 105 and at least partially surrounds the reactive layer 115. A projection 130 of the reactive layer 115 extends through the barrier device 120.

[0044] The barrier device 120 forms, merely by way of example, a wall that can be significantly higher than the semiconductor component 105, for example, higher than 1 mm, while the reactive layer 115 is typically only between 50 µm and 100 µm thick. This can, for example, protect the circuit board 110 from damage caused by drops or splashes of the reactive layer 115.

[0045] The gap 125 is arranged between the barrier device 120 and the semiconductor component 105. According to one embodiment, the gap 125 is exposed to a laser beam to ignite the reactive layer 115.

[0046] Fig. 3 shows a schematic sectional view of an embodiment of a component 100. The component 100 is similar to or corresponds to the component from Fig. 2. Shown is a lateral section through a portion of component 100.

[0047] The barrier device 120 has a through-opening 300. The through-opening 300 is formed, for example, merely as a hole, here rectangular in shape. The excess reactive layer 115 is passed through the through-opening 300. The barrier device 120 is formed, for example, flexibly, with a wall section of the barrier device 120 in the region of the through-opening 300 being higher than the rest of the barrier device 120. Alternatively, the barrier device 120 can also be printed with a through-opening 300.

[0048] Fig. 4 shows a schematic representation of an embodiment of a semiconductor component 105, as used, for example, for a component of the figures described above.

[0049] A top side of semiconductor component 105 is shown. Semiconductor component 105 has two terminals 400, 405 merely as an example. Terminals 400, 405 are formed, for example, as transistor terminals and covered with reactive layer 115. Reactive layer 115 is applied or grown, for example. A gap 410 is arranged between terminals 400, 405.

[0050] Fig. 5 shows a schematic representation of an embodiment of a semiconductor component 105. The semiconductor component 105 is similar or corresponds to the semiconductor component 105 of Fig. 4, except that an embodiment of the barrier device 120 is shown.

[0051] The barrier device 120 is arranged on the top side of the semiconductor component 105. The barrier device 120 surrounds the terminals 400, 405 covered with the reactive layer 115. More precisely, the barrier device 120 is arranged in the gap 410 between the terminals 400, 405, so that the terminals 400, 405 and thus also the reactive layer 115 are completely surrounded by the barrier device 120.

[0052] In other words, Fig. 5 shows bonding of the semiconductor component 105 to the barrier device 120, which can also be referred to as an inner splash barrier, wherein only the top side of the semiconductor component 105 is bonded by way of example.

[0053] In this embodiment, the barrier device 120 is placed around the semiconductor device 105, similar to the previous Fig. 1 to 3. However, splashes are prevented from reaching the edges of the semiconductor device 105. Therefore, the barrier device 120 is formed smaller than the semiconductor device 105. This can be achieved with a separate reactive layer 115, wherein the barrier device 120, which can also be referred to as a barrier layer, is deposited on the semiconductor device 105. Alternatively, this can be done with a reactive layer 115 grown on the terminals 400, 405.

[0054] The Fig. 4 and Fig. 5 shows a top view of a semiconductor device 105, purely exemplary with two terminals 400, 405, which may also be referred to as pads, which is typical for a transistor. The barrier device 120 is applied directly to the semiconductor device 105 or to the entire wafer prior to dicing, either during wafer growth or in a separate step thereafter. The process is either a standard cleanroom process, for example, sputtering, or a non-cleanroom process such as simple dispensing. The barrier device 120 comprises, for example, polyimide or another non-conductive material as its material.

[0055] In the next step, the reactive layer 115 is placed on the circuit board 110 and the semiconductor device 105 with its own barrier device 120 is placed on it, see Fig. 6. When pressure is now applied to the semiconductor device 105, the slightly flexible barrier device 120 is reduced in height until the semiconductor device 105, the reactive layer 115, and the circuit board 110 are in contact. Once the materials are in contact, the reactive layer 115 is ignited using standard methods or by using ultrasonic energy.

[0056] Alternatively, the reactive layer 115 is grown directly onto the wafer or semiconductor component 105, and the barrier device 120 is also grown directly thereafter onto the wafer or semiconductor component 105, for example, by sputtering. The advantage is that the height can be controlled very precisely with these methods.

[0057] The reactive layer 115 can be located at exactly the same height as the barrier device 120, see for example Fig. 6. The barrier device 120 may even be slightly lower, for example, a few tens of nanometers to a few micrometers, than the reactive layer 115. The reason for this is that the droplets have a certain diameter, so they cannot simply fit through a small gap.

[0058] In principle, the two solutions can also be combined, for example, sputtering the reactive layer 115 directly onto the semiconductor component 105 or the wafer, but depositing the barrier device 120 by applying or printing it onto the semiconductor component 105.

[0059] Fig. 6 shows a schematic representation of an embodiment of a component 100. The component 100 is similar to or corresponds to the component from Fig. 5 except that the circuit board 110 is also shown.

[0060] The semiconductor device 105, on which the reactive layer 115 and the barrier device 120 were previously arranged, see Fig. 5, is arranged on the circuit board 110. The semiconductor component 105 is pressed onto the circuit board 110 by pressure. This pressure is also transferred to the barrier device 120, which, due to its flexible material, yields and reduces in height. Thus, the barrier device 120 and the reactive layer 115 contact the circuit board 110.

[0061] The semiconductor component 105 has a projection with respect to the reactive layer 115 and the barrier device 120.

[0062] Fig. 7 shows a schematic representation of an embodiment of a component 100. The component 100 is similar to or corresponds to the component from Fig. 6, except that a top view of component 100 is shown.

[0063] In the plan view shown, only the semiconductor component 105 and the circuit board 110 are visible, since the reactive layer and the barrier device are arranged between the semiconductor component 105 and the circuit board 110, wherein the semiconductor component 105 with respect to the reactive layer and the barrier device has the Fig. 6 shows the projection.

[0064] Fig. 8 shows a schematic representation of an embodiment of a component 100. The component 100 is similar to the component from one of the figures described above, wherein the circuit board is omitted.

[0065] A side view of component 100 is shown. Barrier device 120 has through-opening 300. Reactive layer 115 is visible through through-opening 300. According to one embodiment, a laser beam is directed through through-opening 300 onto reactive layer 115 to ignite reactive layer 115.

[0066] In other words, in all proposed methods, the through-opening 300, which can be inserted into the barrier device 120 as a hole, a slit, a gap, or another shaped opening, can be used. This through-opening 300 serves, for example, to contact the reactive layer 115 or to initiate the activation process with a laser by striking the reactive layer 115 laterally with a laser beam. In this way, laser activation is possible even if the reactive layer 115 is smaller than the semiconductor component 105 and smaller than the barrier device 120, i.e., has no overhang.

[0067] An additional method important for laser activation is that the barrier device 120 does not require predefined openings through which the laser beam can penetrate and activate the reactive layer 115. Instead, the barrier device 120 can be made of a material that the laser beam can penetrate and thus directly activate the reactive layer 115, for example, a thin plastic-based frame or even a thin metal-based frame.

[0068] Fig. 9 shows a schematic plan view of an embodiment of a component 100. The component 100 is similar to the component from one of the figures described above.

[0069] The barrier device 120 partially surrounds the reactive layer 115, since the barrier device is arranged only along two side walls of the circuit board 110 or the semiconductor device 105.

[0070] In all of the above-mentioned embodiments, it is possible for the barrier device 120 to also have larger openings on one or more sides. The barrier device 120 is merely designed as a partial frame, by way of example, and is not completely closed if only splashes in certain directions are to be prevented.

[0071] In all proposed embodiments, the barrier device 120 can be integrated into the pick-and-place process of the tool as a removable part. This means that the barrier device 120 is removable and reusable after the ignition of the reactive layer 115, which can also be referred to as an RMS bonding process.

[0072] Fig. 10 shows a flowchart of an embodiment of a method 1000 for manufacturing a component. The component is a component from one of the figures described above.

[0073] The method 1000 includes a step 1005 of providing, a step 1010 of assembling and a step 1015 of igniting.

[0074] In step 1005 of providing, a semiconductor component, a circuit board, a reactive layer, and a barrier device are provided. The barrier device comprises, for example, a plastic material and / or foam material and / or metal as its material. According to one embodiment, the semiconductor component forms at least two terminals. In the subsequent step 1010 of joining, the barrier device surrounds the terminals and / or is guided along a gap between the terminals.

[0075] According to one embodiment, in step 1005 of providing, the reactive layer and the barrier device have an identical height. Alternatively, the barrier device has a lower height than the reactive layer. According to another embodiment, in step 1005 of providing, the barrier device has at least one through-opening, wherein the reactive layer is guided, for example, through the through-opening in the subsequent joining step 1010.

[0076] In step 1010 of joining, the semiconductor component, the circuit board, the reactive layer, and the barrier device are joined together, with the reactive layer being arranged between the semiconductor component and the circuit board. For example, the distance between the reactive layer and the barrier device is less than one millimeter.

[0077] The barrier device is arranged on the semiconductor component, wherein the barrier device at least partially surrounds the reactive layer. According to one embodiment, in step 1010 of joining, a gap is arranged between the barrier device and the semiconductor component in order to ignite the reactive layer in the subsequent step 1015 of ignition.

[0078] According to a further embodiment, in step 1010 of assembly, the barrier device is applied to the circuit board or the semiconductor component by means of a printing process or by sputtering. Additionally or alternatively, in step 1010 of assembly, the barrier device is arranged on the semiconductor component, wherein the barrier device is arranged between the semiconductor component and the reactive layer.

[0079] The reactive layer is grown on the semiconductor device, for example, in the assembly step 1010. In the subsequent ignition step 1015, the reactive layer is then ignited to electrically contact the semiconductor device and the circuit board, with the barrier device serving as a splash guard.

[0080] For example, the method 1000 additionally includes a step 1020 of pressurizing the semiconductor device to reduce a height of the barrier device in order to contact the semiconductor device, the reactive layer, and the circuit board. The pressurizing step 1020 is performed before the ignition step 1015.

[0081] Furthermore, the method 1000 optionally includes a step 1025 of removing the barrier device after the ignition step 1015. For example, this allows for reuse of the barrier device. Reference symbol 100 components 105 semiconductor components 110 circuit board 115 reactive layer 120 barrier device 125 gap 130 overhang 300 passage opening 400 first connection 405 second connection 410 space 1000 processes for manufacturing a component 1005 Step of Deployment 1010 step of joining 1015 Step of ignition 1020 pressurization step 1025 steps of losing weight

Claims

[1] Method (1000) for producing a component (100), the method (1000) comprising the following steps: Providing (1005) a semiconductor device (105), a circuit board (110), a reactive layer (115) and a barrier device (120); Joining (1010) the semiconductor component (105), the circuit board (110), the reactive layer (115) and the barrier device (120), wherein the reactive layer (115) is arranged between the semiconductor component (105) and the circuit board (110), the barrier device (120) is arranged on the semiconductor component (105), wherein the barrier device (120) is applied to the semiconductor component (105) by means of a printing process or by growth, and wherein the barrier device (120) at least partially surrounds the reactive layer (115); and Igniting (1015) the reactive layer (115) to electrically contact the semiconductor device (105) and the circuit board (110), wherein the barrier device (120) serves as a splash guard. [2] The method (1000) of claim 1, wherein in the step (1010) of joining, a gap (125) is arranged between the barrier device (120) and the semiconductor device (105). [3] Method (1000) according to one of the preceding claims, wherein in the step (1005) of providing, the barrier device (120) comprises a plastic material and / or foam material and / or metal as material. [4] Method (1000) according to one of the preceding claims, wherein in the step (1010) of assembling, the barrier device (120) is arranged on the semiconductor device (105), wherein the barrier device (120) is partially arranged between the semiconductor device (105) and the reactive layer (115). [5] Method (1000) according to one of the preceding claims, wherein in the step (1005) of providing, the semiconductor component (105) forms at least one terminal (400, 405), wherein in the step (1010) of joining, the barrier device (120) surrounds the terminal (400, 405) and / or is guided along a gap (410) between two terminals (400, 405). [6] Method (1000) according to one of the preceding claims, comprising a step (1020) of pressurizing the semiconductor device (105) to reduce a height of the barrier device (120) in order to contact the semiconductor device (105), the reactive layer (115) and the circuit board (110), wherein the step (1020) of pressurizing is carried out before the step (1015) of firing. [7] Method (1000) according to one of the preceding claims, wherein in the step (1010) of assembling, the reactive layer (115) is grown on the semiconductor device (105). [8] Method (1000) according to one of the preceding claims, wherein in the step of providing (1005) the reactive layer (115) and the barrier device (120) have an identical height or wherein the barrier device (120) has a lower height than the reactive layer (115). [9] Method (1000) according to one of the preceding claims, wherein in the step (1005) of providing, the barrier device (120) has at least one through-opening (300). [10] The method (1000) according to claim 1, wherein in the step of joining, the reactive layer (115) is passed through the through-opening (300). [11] Method (1000) according to one of the preceding claims, wherein in the step (1010) of joining, a distance between the reactive layer (115) and the barrier device (120) is less than one millimeter. [12] Method (1000) according to one of the preceding claims, wherein in the step of igniting (1015) the reactive layer (115), a laser beam is directed through the barrier device (120) formed from a light-transmitting material onto the reactive layer (115).

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