Semiconductor package, power semiconductor module and manufacturing process

Abstract

The present invention relates to a semiconductor package (20) for a power semiconductor module (18) of a traction converter (12), comprising: a power semiconductor (22) having a first side (30), an opposite second side (32), and a control terminal (34) on the first side; a first contacting unit (24) for contacting the first side, wherein the first contacting unit is in planar thermal and electrical contact with a large portion of the first side; a second contacting unit (26) for contacting the second side, wherein the second contacting unit is in planar thermal and electrical contact with a large portion of the second side; and a connection connector (28) for connecting the control terminal of the power semiconductor to a control unit (21).The present invention further relates to a power semiconductor module (18) for a traction converter (12) and to a method for producing a plurality of semiconductor packages (20).

Description

The present invention relates to a semiconductor package for a power semiconductor module of a traction converter. The present invention also relates to a power semiconductor module for a traction converter and to a method for producing a semiconductor package.The power electronics of electric and hybrid vehicles forwards the traction energy from the battery to the electric motor and thereby converts direct current into alternating current. For this purpose, an AC converter or else inverter or traction converter is provided. Usually, several transistors or other power semiconductors are used here, which are combined to form a power semiconductor module and switch at short and regular intervals. In particular, MOSFETs (metal oxide semiconductor field effect transistors) and also IGBTs (insulated gate bipolar transistors) are used as switches in this environment. In the switched-on state, the battery current is passed on to the motor (conducting phase). High-frequency switching processes achieve a voltage profile of the alternating voltage, which can then be converted into traction energy in the electric motor. To increase the current-carrying capacity, a plurality of power semiconductors are usually connected in parallel in a (topological) switch.The production process for such power semiconductor modules usually comprises various technically demanding steps. Usually, the singulated power semiconductors (also chip or semiconductor chips) are applied to a ceramic substrate, which is also suitable for dissipating the generated heat. The ceramic substrate is in turn applied to a base plate with a cooling structure, wherein for the application, for example, soldering, sintering or thermal growth processes are used. The contacting of the drain, source and gate terminals of the individual power semiconductors is usually carried out using the wire bonding method. Thin wires are connected to respective terminals of the power semiconductor to electrically contact these terminals with respective leads. Usually, after the connection, a plurality of power semiconductors or a power semiconductor module are sheathed with a potting material in a potting process in order to provide a package or semiconductor package which can then be used as a component in a traction converter.In this connection, DE 10 2022 202 254 A1 discloses a modular half-bridge module which is formed from at least two power semiconductor modules. Each power semiconductor module includes a first outer substrate, a semiconductor switch chip, an intermediate substrate, a diode chip, and an outer second substrate stacked together in this order. The semiconductor switch is bonded to the first outer substrate with a positive terminal and to the intermediate substrate with a negative terminal. The diode chip is bonded to the second outer substrate with an anode terminal and to the intermediate substrate with a cathode terminal. The diode chip is electrically connected in antiparallel to the semiconductor switching chip via the substrates. The at least two power semiconductor modules are electrically connected to one another to form a half bridge.Due to the comparatively difficult handling of the power semiconductors (chip handling) and due to the comparatively complicated contacting, this production process has often been complex up to now and additionally allows few variations. For a power semiconductor module with higher / lower power, a different form factor or also a different number of individual power semiconductors in the module, a changeover of the entire production has often been necessary up to now. This results in high costs as well as low efficiency and poor scalability.Proceeding from this, the object of the present invention is to provide an approach for providing an efficiently producible and flexibly usable component for power semiconductors and power semiconductor modules in a traction converter. In particular, the most efficient possible production at low costs should be made possible and flexibility with regard to the mapping of different form factors should be made possible.To achieve this object, the present invention relates, in a first aspect, to a semiconductor package for a power semiconductor module of a traction converter, having:a power semiconductor having a first side, an opposite second side, and a control terminal on the first side;a first contacting unit for contacting the first side, wherein the first contacting unit is contacted in a planar manner with a major part of the first side thermally and electrically;a second contacting unit for contacting the second side, wherein the second contacting unit is contacted in a planar manner with a major part of the second side thermally and electrically; anda terminal connector for connecting the control terminal of the power semiconductor to a control unit.In a further aspect, the present invention relates to a power semiconductor module for a traction converter having a plurality of semiconductor packages as described above.In a further aspect, the present invention relates to a method for producing a plurality of semiconductor packages as described above, having the steps:providing a support structure made of an electrically thermally conductive material;applying a plurality of power semiconductors to the support structure and electrically and thermally contacting the second sides of the plurality of power semiconductors with the support structure;separating the carrier structure to produce a plurality of semiconductor packages each having at most two power semiconductors, preferably one power semiconductor; anddetermining an electrical parameter for each of the plurality of semiconductor packages in a test method and sorting the semiconductor packages based on this parameter.Preferred embodiments of the invention are described in the dependent claims. It is understood that the features mentioned above and those still to be explained below can be used not only in the respectively specified combination, but also in other combinations or alone, without departing from the scope of the present invention. In particular, the semiconductor package, the power semiconductor module and the method for producing a plurality of semiconductor packages can be embodied in accordance with the configurations described for the semiconductor package in the dependent claims.According to the invention, it is provided that contact is made with surface contact, electrical contact and thermal contact on both sides of the power semiconductor. The first side of the power semiconductor (top side) may correspond to the drain or source terminal of the power semiconductor. The first contacting unit serves in this respect both for supplying or discharging the (high) current and for discharging the heat generated during switching. The second side of the power semiconductor (underside) can correspond in a corresponding manner to the drain or source terminal of the power semiconductor and likewise serves for discharging the (high) current and for discharging the heat generated.The two contact-making units are each in planar contact with a major part of the first or second side of the power semiconductor. In this respect, good electrical and thermal contacting results. High currents can be conducted and heat can be efficiently dissipated. Losses are minimized. In contrast to previous approaches, the current flow takes place so far, so to speak, perpendicularly to a plane of the power semiconductor.The control terminal of the power semiconductor (gate terminal) is connected via the terminal connector. According to the invention, the control terminal is located on the first side of the power semiconductor. The connection is made to a corresponding control unit (not part of the semiconductor package). The control unit can be designed, for example, for the corresponding control of the power semiconductor or for switching. For example, the control unit can be arranged in the power semiconductor module or else centrally in the traction converter.The power semiconductor module according to the invention is designed in particular for use in a traction converter of a vehicle. In this traction converter, a conversion from DC voltage of a battery to an AC voltage for an electric motor takes place. In this respect, comparatively high currents are switched. It goes without saying that usually a multiplicity of semiconductor packages according to the invention are used for the switching in a parallel connection.The semiconductor package according to the invention corresponds in particular to a chip scaled / sized package (CSP). The semiconductor package is, as it were, an approach to reducing to the essence and to design a unit for a power semiconductor that is as small as possible.In contrast to previous approaches for the construction of power semiconductor modules or for the packaging of power semiconductors, no insulation layers for electrical insulation are provided or required in the semiconductor package according to the invention, in particular no planar insulation layers on the upper and lower sides of the power semiconductor or on the contact-making components. The semiconductor package according to the invention corresponds in this respect to a minimal component or a reduced approach, which is reduced to the essence. By omitting insulation layers (for electrical insulation), it is also often possible to achieve improved heat dissipation, since insulation layers of this type for electrical insulation also inhibit heat dissipation.Furthermore, the inventive-safe semiconductor package enables efficient further processing. In particular, it is made possible for different power semiconductor modules, in particular with regard to power and shape, to be able to be produced on the basis of the semiconductor package. The corresponding outlay for adaptation, for example in the case of an increased power requirement or, for example, in the case of a different form factor, can thereby be reduced. This results in improved flexibility in production. Simple fabrication of the semiconductor package is made possible. In addition, good scalability in the production can be made possible.In particular, a three-dimensional structure of a power semiconductor module is made possible. In other words, the semiconductor packages can therefore also be arranged at least partially one on top of the other and an efficient current flow can nevertheless be ensured.In a preferred embodiment, the semiconductor package comprises at most two power semiconductors. Additionally or alternatively, the semiconductor package is encapsulated with an encapsulation compound. By using at most two and preferably exactly one power semiconductor in a semiconductor package, a minimum package size results. Flexibility in use is maximized. In addition, further advantages arise in the production process, for example by omitting a sorting of the unprocessed power semiconductors, which is comparatively complicated. The use of a potting compound achieves a robust semiconductor package. For the casting compound, both a hard and a soft casting compound can be used. It is understood that in this case, preferably corresponding contact-making points of the contact-making units and of the connection connector are led outwards in order to be connected to corresponding current- or signal-carrying conductors.In a preferred embodiment, the first contacting unit is designed as a metallization layer, preferably as a copper metallization layer, or as a rigid component, preferably as a copper block. Additionally or alternatively, the second contacting unit is designed as a rigid component, preferably as a copper carrier. A rigid component made of an electrically and thermally conductive material can be used for the first contacting unit. The use of a rigid component enables good contacting. In addition, efficient mullability results. By using copper as material, good electrical and thermal conductivity can be provided. The use of a metallization layer may result in advantages in the production process. Efficient production can be made possible. The second contacting unit can be designed in particular as a carrier component (lead frame). The use of a rigid component also results in efficient mikroability and mechanical stability.In the preferred embodiment, the first contacting unit is contacted in a planar manner with at least 60%, preferably at least 70%, particularly preferably at least 80% of the first side of the power semiconductor. Additionally or alternatively, the second contacting unit is contacted in a planar manner with the entire second side of the power semiconductor. Contacting with a large part of a surface is understood to mean, in particular, contacting which extends over more than half of the surface. Preferably, however, the contacting is even more comprehensive and extends over a higher surface proportion of the first or second side of the power semiconductor. In particular, it is possible for the second contacting unit to be in contact with the complete second side of the power semiconductor. For the first side, slightly poorer contacting is accepted here both in thermal and electrical nature, in order additionally to make possible a connection of the control connection. This results in efficient machinability with good electrical and thermal properties.In a preferred embodiment, the connection connector comprises a flexible printed circuit board with a conductor track. It is understood that further conductor tracks can also be arranged on the flexible printed circuit board in order to be able to lead and drive, for example, a Kelvin source terminal of the power semiconductor to the outside. By using a flexible printed circuit board as a connection connector, efficient workability can be achieved. In addition, mechanical robustness may be provided. In addition, there are further possibilities with regard to the use of further components, such as a sensor.In a preferred embodiment, a sintered compound is arranged between the first contacting unit and the first side of the power semiconductor and / or between the second contacting unit and the second side of the power semiconductor. In particular, sintering can be selected as the connecting technique. This results in a mechanically stable and additionally electrically and thermally advantageous connection. In addition, efficient workability can be achieved since a sintered joint also enables high temperatures.In a preferred embodiment, a cross-sectional area of the first contacting unit parallel to a plane of the power semiconductor in the region of contacting the first contacting unit with the first side of the power semiconductor is smaller than in a region spaced apart from contacting the first contacting unit with the first side of the power semiconductor. Preferably, the change in cross-sectional area is discrete. As a result of the cross section increasing with increasing distance from the surface or the first side of the power semiconductor, the heat dissipation can be improved. This results in a further improvement in the efficiency during the operation of the semiconductor package in a power semiconductor module of a traction converter. The change in cross-sectional area is preferably discrete. In particular, a step can be provided, wherein the cross section suddenly increases. A step or a discrete change in the cross-sectional area can be manufactured efficiently. In addition, in this respect, a kind of cutout for the connection connector for connecting the control terminal can be provided on the first side of the power semiconductor, so to speak.In a preferred configuration, the power semiconductor comprises a further control terminal on the first side. The connection connector is preferably designed for contacting the further control connection with the control unit. In particular, a Kelvin source terminal can be provided as a further control terminal. This can likewise be connected to the control unit (not part of the semiconductor package) in order to be able to provide or process a control signal in this respect. This results in a further improved manufacturing efficiency for the semiconductor package. In this respect, semiconductor packages with further functions can be provided.In a preferred configuration, the semiconductor package does not comprise a planar insulation unit for electrically insulating a large part of the first side of the power semiconductor and / or a large part of the second side of the power semiconductor. In particular, no ceramic layer is part of the semiconductor package. Such an arrangement enables electrical insulation with simultaneous thermal conductivity. Even if a planar insulation unit and in particular a ceramic layer is thermally conductive, however, this can often bring about an inhibition of the thermal flow. In this respect, by eliminating a planar insulation unit, a further improved operability of the semiconductor package is obtained.In a preferred configuration of the power semiconductor module, a first half of the plurality of semiconductor packages is arranged rotated 180° with respect to a second half of the plurality of semiconductor packages, such that the first contact-making units of the first half of the plurality of semiconductor packages are oriented in the same direction as the second contact-making units of the second half of the plurality of semiconductor packages. The alignment direction is to be understood here in particular perpendicular to a plane of the (flat) power semiconductor. In this respect, half of the power semiconductors or the semiconductor packages stand upside down, so to speak. This arrangement enables efficient contacting. In particular, the use of wire bonding can be dispensed with to the greatest extent possible. In this respect, efficient mullability can be made possible.Herein, a power semiconductor module is understood to mean in particular an assembly for use in an inverter structure or in a traction converter in a vehicle. A power semiconductor or a semiconductor switch corresponds in particular to a transistor or a chip. Usually, a plurality of transistors are combined to form a topological switch. A power semiconductor module thus comprises a plurality of semiconductor switches or a plurality of power semiconductors. A power semiconductor corresponds in particular to a MOSFET. A power semiconductor usually has at least one gate terminal, one source terminal and one drain terminal and optionally a Kelvin source terminal. Electrical and thermal contacting is a connection that conducts current and heat with low resistance. A flat contacting is understood in particular to mean a connection over a larger area or a relevant portion of an overall area. In particular, a planar contacting herein is a contacting without the use of a bonding wire.The invention will be described and explained in more detail below with reference to some selected exemplary embodiments in conjunction with the accompanying drawings. The following are shown: FIG. 1 shows a schematic illustration of a vehicle having a power semiconductor module according to the invention in a traction converter; FIG. 2 shows a schematic illustration of a semiconductor package according to the invention; FIGS. 3 a, 3 b show schematic representations of a possible use of a semiconductor package according to the invention on a low side and a high side of a half-bridge circuit; FIGS. 4a-4d show various further embodiments of the semiconductor package according to the invention; FIG. 5 shows a schematic illustration of an embodiment of the semiconductor package according to the invention with increasing cross-sectional area of the first contacting unit; FIG. 6 shows a schematic illustration of a semiconductor package according to the invention with a connection connector with a flexible printed circuit board; FIGS. 7 a- 7 dshow schematic representations of various embodiments of the semiconductor package according to the invention in plan view; and FIG. 8 shows a schematic illustration of a method according to the invention for producing a plurality of semiconductor packages.FIG. 1 schematically illustrates a vehicle 10 having a traction converter 12. The traction converter 12 is arranged between a battery 14 and an electric machine 16 of the vehicle 10 in order to convert the direct current of the battery 14 into the alternating current required by the electric machine 16. The traction converter 12 comprises a power semiconductor module 18 according to the invention, which in turn comprises a plurality of semiconductor packages 20 according to the invention. In addition, a control unit 21 for driving the various semiconductors in the semiconductor packages 20 is provided, which is connected in particular to the corresponding gate connections of the semiconductors. The illustration in FIG. 1 is to be understood as a schematic lateral sectional view. In the exemplary embodiment shown, the power semiconductor module 18 comprises two semiconductor packages. It is understood that a plurality of power semiconductor modules each having a plurality of semiconductor packages are usually arranged in a traction converter 12.According to the invention, it is provided that a semiconductor package 20 is used, which is designed in the manner of a CSP. In particular, the semiconductor package 20 according to the invention preferably comprises at most two individual power semiconductors (chips) and thus represents a unit in the size range of an individual chip or an individual power semiconductor.FIG. 2 schematically illustrates an embodiment of a semiconductor package 20 according to the invention. The semiconductor package 20 comprises a power semiconductor 22, a first contacting unit 24, a second contacting unit 26 and a connection connector 28. The illustration is to be understood as a lateral sectional view. The individual components are not shown to scale in terms of their extent, in particular in terms of their thickness. A thickness of a power semiconductor is usually in the range of several hundred micrometers. The current-conducting components are often comparatively thicker. In this respect, the illustration in FIG. 2 is understood substantially as a principle visualization in this respect.The power semiconductor 22 corresponds to a chip and is substantially planar. The power semiconductor 22 has a first side 30 corresponding to the top side in the illustration and a second side 32 corresponding to the bottom side in the illustration. A control terminal 34 is arranged on the first side 30, which in particular corresponds to the gate terminal of the power semiconductor 22. It is particularly advantageous that the semiconductor package according to the invention does not require the use of planar insulation units. In particular, therefore, no insulation layers for electrical insulation are required between the first side 30 of the power semiconductor 22 and components in the direction of the first contacting unit 24. This enables improved thermal contacting and efficient production.The first contacting unit 24 is in electrical and thermal contact with the first side 30 of the power semiconductor 22. the contacting is planar and relates to or covers a major part of the first side 30. the electrical and thermal contacting thus extends at least over half of the first side 30 or the top side or also the top surface of the power semiconductor 22. The first contact-making unit 24 is used to connect the first side 30 of the power semiconductor 22 to a DC side or AC side of a half-bridge circuit. In this respect, the drain or source terminal of the power semiconductor 22 is contacted via the first contacting unit 24. In addition to the electrical contacting to the power line, a thermal path is also provided via the first contacting unit 24 in order to remove switching heat.The second contacting unit 26 is in contact with the second side 32 of the power semiconductor 22, and the second contacting unit 26 is also in surface contact with a major part of the second side 32 of the power semiconductor 22 thermally and electrically. Preferably, as shown in the illustrated exemplary embodiment, the entire second side 32 is contacted with the second contacting unit 26.In the exemplary embodiment shown, the first contacting unit 24 is designed as a rigid component. In particular, the contacting can be implemented via a copper block as the first contacting unit 24. In alternative embodiments, however, the use of a copper metallization layer as first contacting unit 24 is also conceivable. For example, an application process can be carried out for this purpose by vapor deposition. The second contacting unit 26 can likewise be designed, for example, as a rigid component. For example, a copper carrier (leadframe) may correspond to the second contacting unit 26.In the exemplary embodiment shown, the contacting between the first contacting unit 24 and the power semiconductor 22 or between the second contacting unit 26 and the power semiconductor 22 is implemented by means of a sintered connection 36 in each case. It is understood that alternatively or additionally a soldered connection or another connection technique can be used.The terminal connector 28 connects the control terminal 34 of the power semiconductor 22 to the control unit (outside the semiconductor package). In the exemplary embodiment shown, the connection connector 28 comprises in particular a bonding wire. It is understood that other connecting parts can also be used.In the exemplary embodiment shown, the power semiconductor 22 comprises an (optional) further control terminal 38 which is likewise arranged on the first side 30 of the power semiconductor 22 and is contacted to the outside via an (optional) further terminal connector 40. This further control terminal 38 can enable, for example, a connection of a Kelvin source terminal of the power semiconductor 22. In the example shown, the further control terminal 38 is led outwards via a further terminal connector 40 or a separate bonding wire. Alternatively, however, it is also possible for both the control terminal 34 and the further control terminal 38 to be connected to the control unit via a common terminal connector. For example, a flexible printed circuit board having two conductor tracks can be used as (common) connection connector for this purpose.In comparison with previous approaches, the inventive construction of the semiconductor package 20 enables a CSP embodiment. Thus, the components required to the minimum extent are used. A power semiconductor module can be constructed from a plurality of semiconductor packages 20 according to the invention. This results in great design flexibility, since different numbers of semiconductor packages can be used together. In addition, the shape of the power semiconductor module can be adapted with comparatively little outlay, since rearrangement of a plurality of semiconductor packages is possible without problems on account of the individual embodiment thereof.FIGS. 3 aand 3 b show that the semiconductor package 20 according to the invention can be used by a 180° rotation with an otherwise identical embodiment on a low side or a high side of a half-bridge circuit.With regard to the reference numerals in FIGS. 3 aand 3 b, and also in the following FIGS. 4 a- 4 d, 5, 6 and 7 a- 7 d, reference is made to the above explanations relating to FIG. 2. The same reference numerals designate the same components, figure areas with identical hatching correspond to the same components. In order to avoid repetitions and to improve the clarity, it is not necessary to introduce all reference numerals again in each case and to sign them in the figures. In particular, the differences of the various embodiments and the possible variations resulting therefrom are discussed.It can be seen from the illustration in FIGS. 3 aand 3 bthat the semiconductor package 20 according to the invention enables a three-dimensional construction. In particular, a type of stacking can be made possible in which semiconductor packages 20 are used in a power semiconductor module, a first half of which is oriented rotated 180° with respect to a second half. A rotation through 180° is understood here in particular to mean a use, corresponding to the illustration, of an otherwise identically configured semiconductor package in the rotated orientation. Thus, for example, one half of the semiconductor packages in a power semiconductor module can be aligned according to the illustration in FIG. 3 a, while the other half is aligned according to the illustration in FIG. 3 b. The option of using in changed orientation enables simplified production of power semiconductor modules from a plurality of semiconductor packages and flexibility with respect to the shape of the power semiconductor module. In addition, efficient production can be achieved.FIGS. 4a-4d show different options for contacting the control terminal 34 and the (optional) further control terminal 38. FIG. 4 ashows an approach in which the tapping takes place centrally on both sides in the side view. FIG. 4 bshows an approach in which the tapping takes place at the top. FIG. 4 cshows an approach in which the tapping takes place centrally on the same side. FIG. 4 dillustrates an approach in which the tapping takes place at the top on the side, wherein the illustration is to be understood such that the control connection 34 is offset to the rear (into the depth of the illustration plane) with respect to the further control connection 38. This also applies to the connection connectors 28, 40.FIG. 5 shows an embodiment of the semiconductor package according to the invention in which, on the first side 30 of the power semiconductor 22, the cross-sectional area of the first contacting unit 24 increases parallel to a plane of the power semiconductor 22 with increasing distance from the first side 30 of the power semiconductor 22. The cross-sectional area of the first contacting unit thus becomes larger and thus enables an improved heat dissipation. In the example shown, the change in cross-sectional area is implemented discretely in the form of a step. It is understood that other cross-sectional changes, for example a continuous cross-sectional change, are also conceivable.FIG. 6 shows an embodiment in which a connection connector 28 is provided, which is designed in the form of a flexible printed circuit board. A conductor track can be provided on the flexible printed circuit board, via which conductor track the control terminal of the power semiconductor 22 is contacted. However, it is also possible for two conductor tracks to be provided, via which both the control terminal 34 and the further control terminal 38 can be contacted. The connection connector 28 can thus, so to speak, lead both the control connection and the further control connection to the outside as a common connection connector, in particular via two conductor tracks. In addition, in this embodiment, further functions can also be realized on the basis of further conductor tracks and, if appropriate, further components.FIGS. 7a-7d show further embodiments of the semiconductor package 20 according to the invention. The representations in FIGS. 7 a- 7 dare to be understood as schematic plan views in comparison with the lateral sectional views shown in FIGS. 2 to 6. The plan views in FIGS. 7 a- 7 deach show that in these exemplary embodiments the semiconductor packages 20 each comprise two power semiconductors 22. In each case two power semiconductors 22 can be in contact with the same first contacting unit 24 and the same second contacting unit 26. Each of the two power semiconductors 22 has a connection connector 28 and a further connection connector 40 in order to contact the control connection 34 and the (optional) further control connection 28. The contacting takes place in different ways and in different directions.FIG. 8 schematically illustrates a method according to the invention for producing a plurality of semiconductor packages. The method corresponds in particular to a method for producing semiconductor packages. As such, the method can be carried out, for example, in a corresponding production facility or by means of a corresponding production apparatus. It is understood that the optional steps are not necessarily required to implement the advantages achievable according to the invention. It is also understood that the optional steps may also be used in a different order.The method comprises a step of providing S 10 a carrier structure made of an electrically thermally conductive material, wherein in particular a leadframe panel can be used.The method comprises an (optional) step of applying S 12 sintering paste for bonding the power semiconductors.The method comprises a step of applying S 14 a plurality of power semiconductors to the carrier structure and of electrically and thermally contacting the second sides of the plurality of power semiconductors with the carrier structure. For example, a chip pick and place method can be used for this purpose.In a subsequent optional step of bonding S 16 the upper contacting to the first sides of the plurality of power semiconductors, a copper block can be placed on each of the power semiconductors as a first contacting unit, for example. For this purpose, a pick and place method, for example, can likewise be used. For example, a connection can be produced in a sintering process.In a subsequent optional step of producing a connection S 18, a connection of the control terminals of the various power semiconductors is produced. For this purpose, a wire bonding method can be used, for example. In particular, both the control terminal and, if appropriate, the further control terminal can be contacted accordingly in order to enable control of the power semiconductors.In a subsequent step of the potting S 20, a potting compound can be applied in order to encapsulate the respective individual semiconductor packages.In a subsequent step of separating S 22 the carrier structure to produce a plurality of semiconductor packages each having at most two power semiconductors, preferably one power semiconductor, the power semiconductors are separated.Subsequently, in an optional step of trimming and forming S 24, trimming and forming of the individual semiconductor packages can take place.In a further step of ascertaining and sorting S 26, an electrical parameter is then ascertained for each of the plurality of semiconductor packages in a test method and the semiconductor packages are sorted on the basis of this parameter. In particular, a test method can be used to determine an electrical parameter. A sorting on the basis of this electrical parameter enables the use of semiconductor packages or power semiconductors having comparable electrical properties in a power semiconductor module. For each power semiconductor module, the respective semiconductor packages can therefore be selected on the basis of this ascertained electrical parameter. This sorting of the semiconductor packages after the individual semiconductor packages are separated requires an improvement compared to the prior art, since sorting before the application of the power semiconductors to a corresponding carrier structure can be avoided. Such a preceding sorting requires a higher outlay on account of the complicated handling of the individual power semiconductors. This results in an increase in efficiency.In a subsequent optional step of the packaging S 28, the individual semiconductor packages can then be packaged.The invention has been fully described and explained with reference to the drawings and the specification. The description and explanation are to be taken by way of example and not limitation. The invention is not limited to the disclosed embodiments. Other embodiments or variations will become apparent to those skilled in the art upon use of the present invention, as well as upon a detailed analysis of the drawings, disclosure and appended claims.In the claims, the words "comprise" and "with" do not exclude the presence of further elements or steps. The undefined article "a" or "an" does not exclude the presence of a plurality. A single element or unit may perform the functions of several of the units recited in the claims. An element, a unit, an interface, a device and a system can be partially or completely implemented in hardware and / or in software. The mere naming of some measures in several different dependent claims is not to be understood as meaning that a combination of these measures cannot likewise be used advantageously. Reference signs in the patent claims should be understood to be non-limiting.Reference numerals denote reference numerals10 Vehicle 12 Traction converter 14 Battery 16 Electric machine 18 Power semiconductor module 20 Semiconductor package 21 Control unit 22 Power semiconductor 24 First contacting unit 26 Second contacting unit 28 Connection connector 29 Potting compound 30 First side 32 Second side 34 Control connection 36 Sintered connection 38 Further control connection 40 Further connection connectorReferences included in the specificationThis list of documents cited by the applicant has been produced in an automated manner and is only included for the better information of the reader. The list is not part of the German patent application or utility model application. The DPMA does not take any adhesion for any faults or omissions.Patent Literature citedDE 10 2022 202 254 A1

[0004]

Claims

A semiconductor package (20) for a power semiconductor module (18) of a traction converter (12), comprising: a power semiconductor (22) having a first side (30), an opposite second side (32) and a control terminal (34) on the first side; a first contacting unit (24) for contacting the first side, wherein the first contacting unit is contacted in a planar manner with a major part of the first side thermally and electrically; a second contacting unit (26) for contacting the second side, wherein the second contacting unit is contacted in a planar manner with a major part of the second side thermally and electrically; and a terminal connector (28) for connecting the control terminal of the power semiconductor to a control unit (21).Semiconductor package (20) according to claim 1, wherein the semiconductor package comprises at most two power semiconductors (22) and / or is encapsulated with an encapsulation compound (29).Semiconductor package (20) according to one of the preceding claims, wherein the first contacting unit (24) is formed as a metallization layer, preferably as a copper metallization layer, or as a rigid component, preferably as a copper block; and / or the second contacting unit (26) is formed as a rigid component, preferably as a copper carrier.Semiconductor package (20) according to one of the preceding claims, wherein the first contacting unit (24) is contacted in a planar manner with at least 60%, preferably at least 70%, particularly preferably at least 80%, of the first side (30) of the power semiconductor (22); and / or the second contacting unit (26) is contacted in a planar manner with the entire second side (32) of the power semiconductor.The semiconductor package (20) of any preceding claim, wherein the connector (28) comprises a flexible circuit board having a conductive trace.Semiconductor package (20) according to one of the preceding claims, wherein a sintered compound (36) is arranged between the first contacting unit (24) and the first side (30) of the power semiconductor (22) and / or between the second contacting unit (26) and the second side (32) of the power semiconductor.Semiconductor package (20) according to one of the preceding claims, wherein a cross-sectional area of the first contacting unit (24) parallel to a plane of the power semiconductor (22) in the region of contacting the first contacting unit with the first side (30) of the power semiconductor is smaller than in a region spaced apart from contacting the first contacting unit with the first side of the power semiconductor; and the cross-sectional area change is preferably discrete.The semiconductor package (20) according to any one of the preceding claims, wherein the power semiconductor (22) comprises a further control terminal (38) on the first side (30); and the terminal connector (28) is preferably configured to contact the further control terminal with the control unit (21).The semiconductor package (20) according to any one of the preceding claims, wherein the semiconductor package does not comprise a planar insulation unit for electrically insulating a major part of the first side of the power semiconductor (22) and / or a major part of the second side (32) of the power semiconductor.Power semiconductor module (18) for a traction converter (12) having a plurality of semiconductor packages (20) according to one of the preceding claims, wherein preferably a first half of the plurality of semiconductor packages is arranged rotated by 180° with respect to a second half of the plurality of semiconductor packages, such that the first contact-making units (24) of the first half of the plurality of semiconductor packages are aligned in the same direction as the second contact-making units (26) of the second half of the plurality of semiconductor packages.Method for producing a plurality of semiconductor packages (20) according to one of claims 1 to 9, comprising the steps of: providing (S10) a carrier structure made of electrically and thermally conductive material; applying (S14) a plurality of power semiconductors (22) to the carrier structure and electrically and thermally contacting the second sides (32) of the plurality of power semiconductors with the carrier structure; separating (S12) the carrier structure to produce a plurality of semiconductor packages each having at most two power semiconductors, preferably one power semiconductor; and determining (S16) an electrical parameter for each of the plurality of semiconductor packages in a test method and sorting the semiconductor packages based on this parameter.

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