Process and coating system

Abstract

According to various embodiments, one method comprises: coating a substrate (102) in a vacuum using a coating material provided by means of two sputtering devices (152a, 152b) between which an emission area (151) is arranged and which are configured to coat each other through the emission area (151); coating a sacrificial structure (120) using the coating material, wherein the sacrificial structure (120) limits the emission area (151) on a side opposite the substrate, and wherein the sacrificial structure (120) is uneven to promote adhesion and / or is cleaned by means of a cleaning process when the sacrificial structure (120) is exposed to the vacuum.

Description

[0001] Several embodiments relate to a process and a coating system.

[0002] In general, a substrate can be treated (processed) in a vacuum, for example by coating, so that its chemical and / or physical properties can be modified. Various coating processes can be used to coat a substrate, of which sputtering (also known as sputter deposition) is an established example of physical vapor deposition (PVD).

[0003] Modifications of cathode sputtering include magnetron sputtering, also known as magnetron sputtering or reactive magnetron sputtering. Plasma formation can be enhanced by a magnetic field, which can influence the ionization rate of the plasma-forming gas. The magnetic field can be generated by a magnet system, which can create a plasma channel that stimulates plasma formation. For sputtering, the target material can be positioned between the plasma channel and the magnet system, allowing the magnetic field to penetrate the target and the plasma channel to form on it.

[0004] Generally, an interaction occurs with the ions of the plasma used for sputtering (e.g., DC sputtering), which can impair the coating of a sensitive substrate, such as a solar cell, a solar cell precursor, or a coated support. For example, the substrate can be bombarded with ions, which can affect the properties of the layer being formed. In the case of a solar cell, this can, for example, reduce efficiency or have other adverse effects.

[0005] To reduce this impact, so-called low-damage coating processes are used, such as atomic layer deposition (ALD) or facing target sputtering (FTS). However, due to the low deposition rates and the difficult integration of ALD, industrial applications generally rely on FTS. FTS is of particular interest for industrial applications because it allows for larger coating widths (e.g., above 1.5 m). Furthermore, it is based on magnetron sputtering, a proven and highly productive deposition method for thin films on large substrates. However, the high material consumption of FTS and the associated costs are accepted, especially since this can increase the frequency of cleaning the coating system.

[0006] According to various embodiments, a method and a coating system are provided which reduce the material consumption of low-damage sputtering (e.g., FTS) or at least reduce the frequency of cleaning, and / or facilitate the recycling of coating material that is not used for coating formation. For example, deposition and low-damage coating formation can be promoted without increased material loss due to lost scattered vapor.

[0007] The following are various examples that relate to what is described herein and depicted in the figures.

[0008] Example 1 (e.g., a method) is configured according to one of the appended claims and / or comprises: coating a substrate in a vacuum using a coating material (also referred to as a coating process) provided by means of two sputtering devices (also referred to as main sputtering devices) between which an emission region is arranged and which are configured to coat each other through the emission region, preferably with the coating material; coating a sacrificial structure using the coating material, wherein the sacrificial structure limits the emission region on a side opposite the substrate, and wherein the sacrificial structure is uneven to promote adhesion and / or is cleaned by means of a cleaning process.

[0009] Example 2 (e.g. a process) is set up according to Example 1, wherein the sacrificial structure is moved (e.g. rotated) when the coating of the sacrificial structure takes place, and / or is at least movably (e.g. rotatably) mounted.

[0010] Example 3 (e.g. a process) is set up according to one of Examples 1 to 2, wherein the sacrificial structure is cleaned when the coating material is positioned in the emission area, and / or when the coating of the substrate and / or the sacrificial structure takes place.

[0011] Example 4 (e.g. a process) is set up according to one of Examples 1 to 3, wherein the substrate and / or the coating material are exposed to a reactive gas with which the coating material reacts to form a reaction product, and / or wherein a layer formed by coating the substrate contains the reaction product (e.g. as a layer-forming material).

[0012] Example 5 (e.g. a process) is set up according to one of Examples 1 to 4, wherein the substrate is exposed to a greater pressure (e.g. partial pressure) of a reactive gas with which the coating material chemically reacts than the sacrificial structure.

[0013] Example 6 (e.g. a method) is set up according to one of Examples 1 to 5, wherein the two sputtering devices are exposed to a greater pressure (e.g. partial pressure) of a reactive gas with which the coating material chemically reacts than the sacrificial structure.

[0014] Example 7 (e.g. a process) is set up according to one of Examples 1 to 6, wherein the sacrificial structure is cleaned when the coating of the substrate and / or the sacrificial structure takes place.

[0015] Example 8 (e.g. a process) is set up according to one of Examples 1 to 7, wherein the coating of the substrate is carried out by means of a coating process to which the coating material and / or the reactive gas is supplied by means of the two sputtering devices.

[0016] Example 9 (e.g., a computer program) is set up, when executed by a processor, to influence the procedure according to one of Examples 1 to 8, e.g., by controlling the coating process and / or the cleaning process.

[0017] Example 10 (e.g., a computer-readable medium) stores instructions that, when executed by a processor, are set up to cause the processor to influence the procedure according to any one of Examples 1 to 8, e.g., by controlling the coating process and / or the cleaning process.

[0018] Example 11 (e.g., a control device) includes one or more processors configured to influence the process according to any one of Examples 1 to 8, e.g., by controlling the coating process and / or the cleaning process.

[0019] Example 12 (e.g., a coating system, e.g., operated according to any one of Examples 1 to 8) is configured according to any one of the appended claims and / or comprises: optionally a vacuum chamber; a substrate holding device for holding a substrate; two sputtering devices (also referred to as main sputtering devices) between which an emission region (e.g., in the vacuum chamber) is arranged and which are configured to coat each other through the emission region, preferably with the coating material; a sacrificial structure which limits the emission region on one side opposite the substrate holding device, wherein the sacrificial structure is uneven to promote adhesion and / or is configured to be cleaned by means of a cleaning device of the coating system when the sacrificial structure is exposed to a vacuum (e.g., in the vacuum chamber); and optionally further comprising the control device according to Example 11.

[0020] Example 13 (e.g. a coating system) is set up according to Example 12, wherein the substrate holding device has a transport device (then also referred to as the substrate transport device) for transporting the substrate along a transport path (e.g. a transport plane extending along the transport path) and / or past the emission area.

[0021] Example 14 (e.g., a coating system) is configured according to one of Examples 1 to 13, further comprising a bearing device by means of which the sacrificial structure is movably (e.g., rotatably) mounted relative to the emission area; and / or further comprising an actuator which is configured to be actuated (e.g., controlled) in response thereto to influence a movement (e.g., rotation) of the sacrificial structure (e.g., to start and / or stop it).

[0022] Example 15 (e.g. a coating system) is set up according to one of Examples 1 to 14, wherein the cleaning device is set up to clean the sacrificial structure when the two sputtering devices emit the coating material and / or when the coating material is located in the emission area, and / or when the coating of the substrate and / or the sacrificial structure takes place.

[0023] Example 16 (e.g., a coating system) is configured according to one of Examples 1 to 15, further comprising a gas supply system (e.g., one or more than one gas supply) configured to supply a reactive gas with which the coating material preferably reacts to form a reaction product, preferably such that the coating material and / or the substrate holding device are exposed to the reactive gas, and / or wherein a layer formed by coating the substrate preferably comprises the reaction product.

[0024] Example 17 (e.g., a coating system) is set up according to one of Examples 1 to 16, wherein the gas supply system is set up to supply the reactive gas with a spatial distribution such that the substrate holder is exposed to a greater pressure of the reactive gas than the sacrificial structure; and / or that the two sputtering devices are exposed to a greater pressure of a reactive gas with which the coating material chemically reacts than the sacrificial structure.

[0025] Example 18 (e.g., a computer program) is set up, when executed by a processor, to control the coating system according to one of Examples 1 to 17, e.g., by controlling the two sputtering devices and / or the cleaning device.

[0026] Example 19 (e.g., a computer-readable medium) stores instructions that, when executed by a processor, are set up to cause the processor to control the coating system according to one of Examples 1 to 17, e.g., by controlling the two sputtering devices and / or the cleaning device.

[0027] Example 20 (e.g., a control device) includes one or more processors configured to control the coating system according to any one of Examples 1 to 17, e.g., by controlling the two sputtering devices and / or the cleaning device.

[0028] Example 21 is set up according to one of Examples 1 to 20, wherein the coating material comprises a semiconductor and / or wherein the sacrificial structure comprises a dopant of the coating material. This facilitates coating with a film-forming material whose provision as a target is costly. An example of such a film-forming material comprises a semiconductor and a dopant thereof in a fraction above a solubility limit of the dopant in the semiconductor.

[0029] Example 22 is set up according to one of Examples 1 to 21, wherein one or more than one of the two (e.g. rotatably mounted) sputtering devices (e.g. one sputtering target thereof) has the coating material.

[0030] Example 23 is set up according to one of Examples 1 to 22, wherein the sacrificial structure is provided by means of a sputtering target and / or by means of a (e.g. third) sputtering device (also referred to as a back-sputtering device).

[0031] Example 24 is set up according to one of Examples 1 to 23, wherein each of the two sputtering devices and / or the back-sputtering device has a magnetic system and a bearing device which provides a rotating axis to a sputtering target (also referred to simply as the target) of the sputtering device, wherein the magnetic system is arranged between the rotating axis and the emission area.

[0032] Example 25 is set up according to one of Examples 1 to 24, wherein the sacrificial structure is tubular, plate-shaped or ribbon-shaped.

[0033] Example 26 is set up according to one of Examples 1 to 25, wherein each of the two sputtering devices and / or the back-sputtering device is set up to form a plasma in the emission region.

[0034] Example 27 is set up according to one of Examples 1 to 26, further comprising an additional sputtering device (also referred to as a back-sputtering device) which is set up to form a plasma in the emission region and / or to coat at least one of the two sputtering devices.

[0035] Example 28 is set up according to any one of Examples 1 to 27, wherein each of the two sputtering devices and / or the back-sputtering device comprises a sputtering target and a magnet system, wherein a section of the sputtering target is arranged between the magnet system and the emission area.

[0036] Example 29 is set up according to one of Examples 1 to 28, wherein each of the two sputtering devices and / or the back-sputtering device has a magnet system which is directed towards the emission region and / or has one or more than one series of magnets arranged one behind the other which have an axis of symmetry (e.g. with respect to their polarity direction), wherein the axis of symmetry is preferably parallel or oblique (e.g. at an acute angle) with respect to a plane in which the axis of rotation of each of the two sputtering devices is arranged.

[0037] Example 30 is set up according to one of Examples 1 to 29, wherein each of the two sputtering devices and / or the back-sputtering device has a magnet system facing the emission region and / or has one or more than one series of magnets arranged in series which have an axis of symmetry (e.g. with respect to their polarity direction).

[0038] Example 31 is set up according to one of Examples 1 to 30, wherein the cleaning process is carried out by means of the cleaning device (e.g. the back-sputtering device); and / or wherein the back-sputtering device provides the cleaning device.

[0039] Example 32 is set up according to one of Examples 1 to 31, wherein the cleaning process and / or cleaning device is set up to clean the sacrificial structure by means of a plasma, by means of thermal evaporation and / or mechanically.

[0040] Example 33 is set up according to one of Examples 1 to 32, wherein the sacrificial structure has a plurality of filaments and / or pores, and / or is roughened; and / or wherein the sacrificial structure is provided by means of a first section of a chamber housing (e.g. its chamber lid) which has a second section adjacent to the first section and which has a lower roughness than the first section.

[0041] Example 34 is set up according to one of Examples 1 to 33, wherein the sacrificial structure has a multitude of grooves and / or ditches.

[0042] Example 35 is set up according to one of Examples 1 to 34, wherein the sacrificial structure is roughened, e.g. by blasting, etching and / or lasering.

[0043] Example 36 is set up according to one of Examples 1 to 35, wherein a roughness (e.g., mean roughness) of the uneven sacrificial structure is greater than approximately 1 micrometer (µm), e.g., than approximately 2 µm, e.g., than approximately 5 µm, e.g., than approximately 10 µm, e.g., than approximately 20 µm; and / or wherein a roughness depth (e.g., average) of the uneven sacrificial structure is greater than approximately 10 micrometers (µm), e.g., than approximately 20 µm, e.g., than approximately 50 µm, e.g., than approximately 100 µm. The greater the roughness depth, the better the adhesion mediation.

[0044] Example 37 is set up according to one of Examples 1 to 36, wherein a specific surface area of ​​the sacrificial structure is greater than approximately 2000 cm². 2 / g (square centimeters per gram), e.g., approximately 5000 cm² 2 / g, e.g. as approximately 10 3 cm 2 / G.

[0045] Example 38 is set up according to one of Examples 1 to 37, where the victim structure has a roughness class of N5 or higher (e.g., N6, N7, N8, or N9). The higher the roughness class, the better the detention placement.

[0046] Example 39 is set up according to one of Examples 1 to 38, wherein the cleaning device (e.g. exactly) has one or more than one magnetic system, each magnetic system facing one of the two sputtering devices.

[0047] Example 40 is set up according to one of Examples 1 to 39, wherein the cleaning device (e.g., exactly) has one or more than one magnetic system, each of which (e.g., with respect to a rotational axis of the cleaning device) has an opening angle which (e.g., its interior) overlaps at least one of the two sputtering devices. For example, the legs of the opening angle can define an interior of the angle which overlaps the two sputtering devices.

[0048] An angle can be expressed as a portion (also called the interior of the angle) of a plane bounded by the two legs of the angle lying in the plane, sharing a common starting point (also called the vertex of the angle). In this context, a geometric overlap of the angle with an object (e.g., a sputtering device) can exist if the interior of the angle and the object intersect.

[0049] Example 41 describes the use of a sputtering device (also referred to as a back-sputtering device) for atomizing a coating material, which is provided and / or transferred to the sputtering device (e.g., captured by it) by means of two sputtering devices (also referred to as main sputtering devices) between which an emission region is arranged, wherein the two main sputtering devices are configured to coat each other through the emission region, preferably with the coating material, and / or wherein the atomization preferably takes place in the direction of one or more than one of the two sputtering devices.

[0050] Example 42 is set up according to one of Examples 1 to 41, wherein the two sputtering devices (e.g. their magnet systems) are facing each other and / or directed towards each other.

[0051] Example 43 is set up according to one of Examples 1 to 42, wherein the reactive gas contains at least oxygen (and / or nitrogen), for example molecular oxygen (and / or nitrogen).

[0052] Example 44 is set up according to any one of Examples 1 to 43, wherein the substrate comprises a semiconductor (e.g. elemental semiconductor and / or compound semiconductor) and / or a semiconductor junction (e.g. pn junction); and / or wherein the substrate comprises multiple layers which differ from each other in their chemical composition and / or doping type (e.g. p-doped or n-doped).

[0053] Example 45 is set up according to one of Examples 1 to 44, wherein the substrate comprises a solar cell precursor and / or a wafer.

[0054] Example 46 is set up according to one of Examples 1 to 45, wherein the coating material comprises at least indium, nickel (Ni), tin, zinc and / or titanium. Alternatively or additionally, the coating material may comprise an oxide thereof, e.g. NiOx.

[0055] Example 47 is set up according to one of Examples 1 to 46, wherein the layer formed on the substrate by means of the coating material (e.g. by coating the substrate) is electrically conductive and / or optically transparent.

[0056] Example 48 is set up according to one of Examples 1 to 47, wherein a direct current (DC) voltage is applied to each of the two sputtering devices, by means of which a plasma is electrically supplied to atomize the coating process (then also referred to as DC sputtering). Alternatively, an alternating current can also be applied between the sputtering devices.

[0057] Example 49 is set up according to any one of Examples 1 to 48, wherein a layer formed by coating the substrate, e.g. having the coating material and / or a reaction product thereof, has a resistivity of less than 2000 µ·Ohm·cm (e.g. as 1000 µ·Ohm·cm, e.g. as 500 µ·Ohm·cm, e.g. as 100 µ·Ohm·cm) and / or a thickness of more than 10 nanometers (nm) (e.g. as 50 nm or as 100 nm).

[0058] Example 50 is set up according to one of Examples 1 to 49, wherein the sacrificial structure is cleaned by means of a cleaning process when the sacrificial structure is exposed to a vacuum and / or the cleaning process is carried out by means of a plasma.

[0059] Example 51 is set up according to one of Examples 1 to 50, wherein the sacrificial structure and / or the two sputtering devices are arranged in a vacuum chamber.

[0060] Example 52 (e.g. a method) is set up according to one of Examples 1 to 51, wherein the sacrificial structure is exposed to a greater pressure of a working gas (e.g. inert to the coating material), by means of which, for example, the formation of the plasma takes place, than the substrate.

[0061] Example 53 (e.g. a method) is set up according to one of Examples 1 to 52, and furthermore includes a transport device (also referred to as a sacrificial structure transport device) for transporting the sacrificial structure relative to the emission area, e.g. along a closed path.

[0062] Example 54 (e.g. a method) is set up according to any one of Examples 1 to 53, wherein the cleaning process comprises removing (e.g. atomizing) the coating material from the sacrificial structure, preferably at (e.g. at least) the rate at which the sacrificial structure is coated with the coating material by means of the two sputtering devices.

[0063] Example 55 (e.g. a method) is set up according to one of Examples 1 to 54, wherein the cleaning device is set up to clean the sacrificial structure.

[0064] They show Fig. 1A a coating system according to various embodiments in a schematic side view or cross-sectional view; Fig. 1B a magnetic system according to various embodiments in a schematic side view or cross-sectional view; Fig. 1C a sputtering device according to various embodiments in a schematic side view or cross-sectional view; Fig. 2A Two main sputtering devices according to different embodiments in a schematic side view or cross-sectional view; Fig. 2B a coating system according to various embodiments in a schematic side view or cross-sectional view; Fig. 3A and Fig. 3B each a sputtering device according to different embodiments in a schematic side view or cross-sectional view; Fig. 3C a coating system according to various embodiments in a schematic side view or cross-sectional view; Fig. 4A a coating system according to various embodiments in a schematic side view or cross-sectional view; Fig. 4B a coating system according to various embodiments in a schematic circuit diagram; Fig. 5A a coating system according to various embodiments in a schematic side view or cross-sectional view; and Fig. 5B a result of the method according to various embodiments in a schematic side view or cross-sectional view.

[0065] The following detailed description refers to the accompanying drawings, which form part thereof and illustrate specific embodiments in which the invention can be implemented. In this context, directional terminology such as "top," "bottom," "front," "back," "anterior," "rear," etc., is used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves only for illustration and is in no way limiting. It is understood that other embodiments may be used and structural or logical modifications may be made without deviating from the scope of protection of the present invention.It is understood that the features of the various exemplary embodiments described herein can be combined with one another, unless specifically stated otherwise. The following detailed description is therefore not to be interpreted in a limiting sense, and the scope of protection of the present invention is defined by the appended claims.

[0066] Within the scope of this description, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connections (e.g., resistive and / or electrically conductive, such as an electrically conductive connection), direct or indirect connections, and direct or indirect couplings. In the figures, identical or similar elements are designated with identical reference numerals where appropriate. According to various embodiments, the term "coupled" or "coupling" can be understood as a connection and / or interaction (e.g., mechanical, hydrostatic, thermal, and / or electrical), e.g., direct or indirect. For example, several elements can be coupled to one another along an interaction chain, along which the interaction can be exchanged, e.g., a fluid (then also referred to as fluid-conducting coupled).For example, two coupled elements can exchange information, such as mechanical, hydrostatic, thermal, and / or electrical interactions. A coupling of several vacuum components (e.g., valves, pumps, chambers, etc.) can involve fluid coupling. Depending on the specific embodiment, "coupled" can refer to a mechanical (e.g., physical) coupling, such as direct physical contact. A coupling can be configured to transmit a mechanical interaction (e.g., force, torque, etc.).

[0067] According to various embodiments, the vacuum chamber can be provided by means of a chamber housing in which one or more chambers are provided. The chamber housing can, for example, be coupled to a pump arrangement, e.g., a vacuum pump arrangement (e.g., gas-conducting), to provide a negative pressure or a vacuum (vacuum chamber housing) and be designed to be stable enough to withstand the effects of atmospheric pressure in the evacuated state. The pump arrangement (comprising at least one vacuum pump, e.g., a high-vacuum pump, e.g., a turbomolecular pump) can enable the removal of some of the gas from the interior of the processing chamber, e.g., from the processing space. Accordingly, one or more vacuum chambers can be provided in a chamber housing. In other words, the chamber housing can be configured as a vacuum chamber housing.A coating chamber can be set up as a vacuum chamber. The term "vacuum pressure" here refers to a negative pressure in the vacuum range (i.e., a pressure of less than 0.3 bar), e.g., that a pressure in a range of approximately 10 mbar to approximately 1 mbar (in other words, rough vacuum) can be provided, or less, e.g., a pressure in a range of approximately 1 mbar to approximately 10. -3 mbar (in other words, fine vacuum) or less, e.g., a pressure in the range of approximately 10 -3 mbar to approximately 10 -7 mbar (in other words, high vacuum) or less, e.g., a pressure of less than high vacuum, e.g., less than approximately 10 -7 mbar.

[0068] A transport system can be understood as a set of interacting components, examples of which include: transport rollers, a bearing device (by means of which, for example, each transport roller is rotatably mounted), a coupling device, a drive train, a gearbox, a drive device, etc. A transport system can, for example, be configured to transport a load (e.g., a substrate and optionally a substrate carrier), for example, by means of the transport rollers. A transport device comprises, for example, the transport system and preferably a substrate carrier.

[0069] According to various embodiments, a storage device can be configured to hold (e.g., guide and / or position) one or more components. For example, the storage device can have one or more bearings per component for holding (e.g., guide and / or position) the component. Each bearing of the storage device can be configured to provide the component with one or more degrees of freedom (e.g., translational or rotational) according to which the component can be moved. Examples of bearings include: radial bearings, thrust bearings, radial-axial bearings, and linear bearings (also called linear guides). Each linear bearing can, for example, provide the component with exactly one translational degree of freedom.

[0070] The term "sputtering" refers to the atomization of a material (also called coating material or target material) using a plasma. The atomized components of the target material are thus separated from one another and can, for example, be deposited elsewhere to form a layer and / or a layer-forming material. Sputtering can be performed using a so-called sputtering device, which may include a magnetic system (then also called a magnetron). The target material can be provided by a so-called sputtering target, which can be, for example, tubular (then also called a tube target) or plate-shaped (then also called a plate target or planar target). To generate the plasma, a voltage can be applied to the sputtering target (also referred to simply as the target), so that the sputtering target operates as the cathode.Even if the voltage is an alternating voltage, the term cathode is retained.

[0071] To effectively atomize the target material (also known as sputtering), the target material can be rotated around the magnet system. For this purpose, the target material can be arranged in a tube shape, a so-called tube target, with the magnet system located inside the tube target, allowing the tube target to rotate around the magnet system. The tube target can, for example, consist of a tube on which the target material is attached as a layer to an outer surface of the tube, partially covering the surface. Alternatively, the tube target can also be formed entirely from the target material itself.

[0072] The term "target material" refers to the initial state of the coating material, which can be solid or liquid, for example. The term "coating material" generally refers to a material used in a coating process that forms one or more layers (also known as coating). The coating material can pass through several states that are transformed into one another (e.g., chemically react) and / or differ from each other, for example, in chemical composition, location of the coating material, and / or state of matter. The initial state of the coating material (then also referred to as the target material) is provided by a so-called target and, depending on the process type, can be the layer-forming material itself or be converted into the layer-forming material.For example, the target material can chemically react to form the coating material (then also referred to as a reactive coating process), e.g., with a reactive gas and / or another coating material, or be mixed with the coating material. The term "coating material" refers to the final state of the coating material in which it provides the coating (its chemical composition). In the context of a sputtering process, the target material refers to the material to be atomized (e.g., the chemical composition of the target).

[0073] According to various embodiments, a sputtering device includes a bearing arrangement which may have one or more end blocks for supporting a tubular target (also referred to as a tube target). If the bearing arrangement has two end blocks, one of the end blocks (the so-called drive end block) may have a drive train coupled to a drive (also referred to as a target drive) for rotating the tube target; and the other end block (the so-called media end block) may have a fluid line for supplying and removing cooling fluid (e.g., a water-based mixture) that can be passed through the target. The two end blocks are, for example, suspended from a chamber ceiling (i.e., a chamber cover). The tube target may be rotatably mounted at opposite end sections by means of so-called end blocks, the end blocks providing a supply of cooling fluid (e.g., a fluid) to the tube target.(with electrical power and cooling fluid).

[0074] However, a single end block (also called a compact end block) can also be used, which incorporates the drive train and the fluid line, thus providing the combined functions of a drive end block and a media end block. The side of the pipe target opposite the compact end block can, for example, cantilever freely (i.e., hang freely), a configuration known as cantilever. In a cantilever configuration, the compact end block can be mounted to a side wall of the vacuum chamber through which the axis of rotation of the pipe target extends. Alternatively, the side of the pipe target opposite the compact end block can be supported by a bearing block (figuratively speaking, a counter-bearing), a configuration known as a bearing block. The bearing block can also be provided by a passive end block, i.e., an end block that neither exchanges energy nor material with the pipe target but merely supports it.It can also be understood that the target's axis of rotation can be parallel or perpendicular to the direction of gravity, depending on the configuration.

[0075] The bearing device can generally (e.g., in the case of a tube target and a plate target) have a support (also called a magnet support) designed to hold the magnet system. The magnet support can, for example, be hollow (e.g., a tube) and fluidically coupled at its end face to an end block that holds the magnet support (e.g., via its fluid line), allowing the magnet support to exchange cooling fluid with the end block. On the side opposite the end block, the tube can, for example, be closed at the end face and have a lateral opening through which the cooling fluid can pass. The magnet support can be round or polygonal, e.g., a round tube or a square tube. The magnet support and / or the magnet system can have a length (extent along the axis of rotation) ranging from approximately 0.2 m (or 1 m) to approximately 6 m, e.g., from approximately 2 m to approximately 5 m.

[0076] A tubular target (a so-called tubular cathode) can, for example, have a tubular support (a so-called target base tube) onto which (e.g., brittle and / or fragile) coating material can be attached. Visually, the coating material can surround the target base tube like a sheath. Alternatively, a tubular magnetron cathode can have a tubular coating material (a so-called target tube) (e.g., a tube made of coating material) or be formed from it.

[0077] For example, a target, e.g., its coating material (also referred to as target material), and / or a layer deposited on a substrate using the target material, can comprise or be composed of at least one of the following material types: a metal; a transition metal; an oxide (e.g., a metal oxide or a transition metal oxide); a dielectric; a polymer (e.g., a carbon-based polymer or a silicon-based polymer); an oxynitride; a nitride; a carbide; a ceramic; a metalloid (e.g., carbon); a perovskite; a glass or glass-like material (e.g., a sulfide glass); a semiconductor (e.g., silicon, boron, or germanium); a semiconductor oxide; a semi-organic material; and / or an organic material. The metal can, for example, comprise or be composed of aluminum (Al) or magnesium, titanium, tin, zinc, indium, nickel, silver, gold, and / or zirconium. Optionally, the coating material can contain a dopant, e.g., Al.For example, a Zn target or Si target can be doped with Al. In other words, the magnetron cathode (which may also be referred to as the target) can contain or be composed of aluminum, tin, zinc, magnesium, and / or silicon.

[0078] The reactive gas can be a gaseous material that reacts with the target material (and / or with the atomized target material) and / or can be incorporated into the deposited layer via a chemical reaction, e.g., oxygen, nitrogen, nitrogen oxides, carbon oxides, and / or ozone. For example, if a target material is used that can form a nitride (e.g., AlNy), or if a nitride of the target material is to be deposited, the reactive gas can contain nitrogen or be composed of nitrogen. If, for example, a target material is used that can form an oxide (e.g., AlOx), or if an oxide of the target material is to be deposited, the reactive gas can contain oxygen or be composed of oxygen. The reactive gas can, for example, be a gas mixture (reactive gas mixture) of several gases that react with the target material and / or the deposited layer, e.g., oxygen and nitrogen.when an oxynitride (e.g., AlOxNy) is to be deposited. The reactive gas mixture can, for example, consist predominantly (i.e., more than 50%) of oxygen, for example, for the deposition of an oxide or oxynitride. According to various embodiments, the reactive gas can contain at least one of the following: oxygen, nitrogen, hydrogen sulfide, methane, gaseous hydrocarbons, fluorine, chlorine, or another gaseous material.

[0079] According to various embodiments, the working gas can be a gaseous material that is unreactive, in other words, one that participates in only a few chemical reactions. A working gas can, for example, be defined by and adapted to the target material used. For instance, a working gas can be a gas or a gas mixture that does not react with the magnetron cathode or the target material to form a solid. The working gas can, for example, be a noble gas (e.g., helium, neon, argon, krypton, xenon, radon) or several noble gases. The working gas can be used to form the plasma, which essentially causes the sputtering of the magnetron cathode (also called the sputtering cathode) or the target material.

[0080] The reactive gas can exhibit higher chemical reactivity than the working gas, for example, with respect to the coating material. In other words, the atomized target material can react faster with the reactive gas (i.e., form more reaction product per unit time) than with the working gas (e.g., if it reacts chemically with the working gas at all). The reactive gas and the working gas can be supplied together or separately as process gases (e.g., as a gas mixture), for example, via a gas supply. The target material can be sputtered (atomized) using the working gas, and a chemical compound (in other words, the reaction product) can be formed using a supplied reactive gas, e.g., a metal compound or a metalloid compound, which can then be deposited onto a substrate. For example, the chemical compound could be a metal oxide (e.g., AlOx) or a metalloid oxide with oxygen as the reactive gas, a metal nitride (e.g., nitride), or a metalloid compound.B. AlNy) or a semimetal nitride with nitrogen as the reactive gas, a metal oxynitride (e.g., AlOxNy) or a semimetal oxynitride with oxygen and nitrogen as the reactive gas, or another metal compound or semimetal compound with a different reactive gas (e.g., a metal carbide or semimetal carbide using a carbon-containing reactive gas), or it may be formed from or composed of such a compound. In other words, the layer material to be deposited (i.e., the reaction product) may contain a metal and / or a semimetal.

[0081] In this context, a magnetic system is understood to be a source of a magnetic field that has multiple magnetic poles, each of which is provided by one or more magnets and / or magnetic materials. Exemplary implementations of each magnet include: a permanent magnet, an electromagnet, and / or a combination thereof. Exemplary implementations of the magnetic material include: a ferromagnetic material, a ferrimagnetic material, a hard magnetic material, and a soft magnetic material.

[0082] Hard magnetic materials can have a coercive field strength greater than approximately 500 kiloamperes per meter (kA / m), e.g., greater than approximately 1000 kA / m. Soft magnetic materials can have a coercive field strength of less than approximately 500 kA / m, e.g., less than approximately 100 kA / m, e.g., less than approximately 10 kA / m, e.g., less than approximately 1 kA / m.

[0083] A magnetic pole is a section of the magnetic system where the field lines exit the system (then also called the north pole) or enter it (then also called the south pole). For example, the magnetic flux density outside the magnetic system increases towards the magnetic pole. Similarly, field lines propagating in free space near the magnetic system are directed towards or away from a magnetic pole. A magnetic pole can be provided, for example, by a magnet (e.g., a permanent magnet) and / or by a soft magnetic material magnetized by the magnet.

[0084] An exemplary implementation of a permanent magnet can consist of a ferromagnetic material, such as a chemical compound (e.g., an alloy) or ferrite. The chemical compound can contain or be composed of a rare-earth metal (such as neodymium, samarium, praseodymium, dysprosium, terbium, and / or gadolinium), iron, cobalt, and / or nickel. For example, a magnet can contain or be composed of at least neodymium, iron, and / or boron, e.g., a chemical compound thereof. Alternatively or additionally, a magnet can contain or be composed of at least aluminum, nickel, and / or cobalt, e.g., a chemical compound thereof. Alternatively or additionally, a magnet can contain or be composed of at least samarium and / or cobalt, e.g., a chemical compound thereof. A magnet can have a coercive field strength greater than approximately 500 kiloamperes per meter (kA / m), e.g., greater than approximately 1000 kA / m.

[0085] The magnetic system can be configured and positioned relative to the target in such a way that an emission zone is provided above the target material (e.g., above its sputtering area), within which a self-contained plasma formation zone (also called a racetrack) is located. The plasma formation zone can have two (adjacent) longitudinally extended sections and two connecting (e.g., curved) sections (reversal sections) connecting the longitudinally extended sections.

[0086] Electrically insulating (e.g., dielectric) is understood here to mean an electrical conductivity of less than approximately 10. -4 exhibiting Siemens per meter (S / m) (e.g. at 20°C), e.g. as approximately 10 -5 S / m, e.g. as approximately 10 -6 S / m. Electrically conductive is understood here to mean an electrical conductivity of more than approximately 10 4exhibiting Siemens per meter (S / m) (e.g. at 20°C), e.g. as approximately 10 5 S / m, e.g. as approximately 10 6 S / m.

[0087] Transparent is understood here to mean having a transmittance (e.g. for electromagnetic radiation of a wavelength of 550 nanometers or of 650 nanometers) of more than 50% (e.g. as 70%, e.g. as 90%, e.g. as 95%).

[0088] Fig. Figure 1A illustrates a coating system according to various embodiments 100a in a schematic side view or cross-sectional view, which is preferably set up according to Example 12 and / or operated according to Example 1.

[0089] An exemplary implementation of the substrate holding device 110 is configured as a transport device, which has several transport rollers for transporting a substrate along a transport path and / or in the direction of 501. The transport path can, for example, be located at a distance from the emission area 151. Optionally, the transport device has a substrate carrier by means of which the substrate, when placed in the substrate carrier, can be transported along the transport path and / or in the direction of 501.

[0090] An exemplary implementation of the emission region 151 is arranged along the transport direction 501 between the sputtering devices 152a, 152b (also referred to as the main sputtering devices). Furthermore, the emission region 151 can be arranged transversely to the transport direction 501 between the substrate holding device 110 and the sacrificial structure 120.

[0091] Exemplary implementations of the sacrificial structure 120 are configured as a containment structure. The containment structure provides the coating material with a greater adhesion medium than one or more reference surfaces of the coating system exposed to the coating material. Examples of the reference surfaces include: one or more adjacent surfaces of the vacuum chamber housing (e.g., chamber wall), one or more surfaces of a shielding wall 504 (see Fig. 5A). For example, the collection structure is designed so that the coating material adheres to it better than to the remaining and / or adjacent surfaces of the vacuum chamber housing. This configuration as a collection structure extends the time until a (parasitic) coating detaches from the sacrificial structure.

[0092] Exemplary implementations of the sacrificial structure (which may be configured as a collection structure, but do not necessarily have to be) are set up as a re-emission structure. The re-emission structure is configured to be cleaned by a cleaning device (also referred to as a cleaning process), e.g., in a vacuum and / or during the coating process. In other words, the cleaning device is configured to perform a cleaning process by which the re-emission structure is cleaned. The cleaning process involves removing the coating material from the re-emission structure, e.g., by atomizing it.

[0093] An exemplary implementation of the cleaning device includes a plasma source. The plasma source is configured to generate a plasma to which the sacrificial structure 120 is exposed to perform the cleaning process (also referred to as a plasma-based cleaning process). Examples of plasma-based cleaning processes are performed by means of plasma etching or sputtering. For example, the cleaning device may be provided by means of a sputtering device (then also referred to as a back-sputtering device). The back-sputtering device is configured to atomize the sacrificial structure 120 (or a coating thereof) by means of the plasma, so that a sputtering process takes place as the cleaning process (also referred to as a cleaning sputtering process). In this case, the back-emission structure may, for example, be provided as a (e.g., tubular) target of the back-sputtering device.Plasma etching can be carried out, for example, using a cleaning device set up as an etching device.

[0094] An exemplary implementation of the cleaning device is configured as a thermal evaporation device. The thermal evaporation device is configured to supply thermal power (also referred to as the heating process) to the back-emission structure, by means of which the cleaning process takes place. For example, the heating process may involve raising the back-emission structure to a temperature at which the coating material transitions into the gas phase. Examples of the heating process include: using a plasma, using electromagnetic radiation (e.g., inductive and / or laser), using particle radiation (e.g., an electron beam), conductive supply of thermal power, etc.

[0095] The following describes various exemplary implementations of components (e.g. the sacrificial structure 120 and the two main sputtering devices 152a, 152b) of the coating system.

[0096] Fig. Figure 1B illustrates a magnetic system according to various embodiments 100b in a schematic side view or cross-sectional view, which is preferably a component of one or more than one sputtering device, for example of Example 1 and / or Example 12 and / or embodiments 100a.

[0097] An exemplary implementation of the magnetic system features a magnetic carrier 162 to which the magnets (e.g., permanent magnets) of a magnetic system are attached (e.g., magnetically). Exemplary implementations of the magnetic carrier 162 are plate-shaped and / or soft magnetic (then also referred to as a return carrier, e.g., return plate).

[0098] Alternatively or additionally, the magnetic system comprises one or more rows (also called magnetic arrays) of magnets, each magnetic array having several magnets arranged one after the other along a path (e.g., at least partially straight). If the magnetic system has several (e.g., at least three) straight magnetic arrays, immediately adjacent magnetic arrays can differ in at least one directional component of their magnetization direction.

[0099] The magnetic system has an inner pole 158 and an outer pole 160, which are spatially separated from each other, for example by means of a gap. Alternatively or additionally, the inner pole 158 can be rigidly coupled to the outer pole 160, e.g. by means of a (e.g. plate-shaped) return carrier (also referred to as a return plate).

[0100] An exemplary implementation of the magnetic system has an inner magnetic pole 158 (also referred to as the inner pole) around which an outer magnetic pole 160 (also referred to as the outer pole) extends, for example, along a closed (e.g., circular) path (also referred to as the pole path). A longitudinally extended implementation of the magnetic system (also referred to as the longitudinally extended magnetic system), such as that used for a tubular target, has an inner pole 158 that extends linearly along a direction (also referred to as the transverse direction) that is perpendicular to the transport direction 501. The pole path can then be oval, for example. The inner pole 158 has, for example, a magnetization direction and / or a first row of magnets arranged one after the other along the transverse direction, which have the same magnetization direction as the inner pole 158.The outer pole 160, for example, has two second rows of magnets arranged one behind the other along the transverse direction, between which the inner pole 158 is located. The magnets of each second row can have the same magnetization direction and / or differ from the magnetization direction of the inner pole 158.

[0101] This refers, among other things, to the longitudinally extended magnetic system, whereby it can be understood that what is described here can apply analogously to any other geometry of the magnetic system.

[0102] In general, the geometry of the magnet system can vary, be scaled and / or adapted to the respective requirements for the spatial distribution of the magnetic field to be generated. Therefore, for easier understanding, generalized parameters are used and presented here to describe the properties of the magnet system, for which examples include: the orientation 151r of the magnet system and the opening angle 153 (if present) of the magnet system, which are referred to below.

[0103] The orientation 151r of the magnet system can be simplified as a (vector) direction that points, for example, from the magnet system towards the region of space into which the magnetic field propagates (e.g., freely), such as a large portion of the magnetic field. The orientation 151r of the magnet system can, for example, be parallel to the magnetization direction of the inner magnetic pole 158, which can be along or opposite to the orientation 151r of the magnet system. The orientation 151r of the magnet system can, for example, be directed from a rotation axis of the sputtering device (e.g., the target rotation axis) towards the inner magnetic pole 158. The orientation 151r of the magnet system can, for example, lie in a plane of symmetry with respect to which the magnet system (or at least the inner pole and / or the outer pole) and / or the target are mirror-symmetric. The target rotation axis, for example, runs along the transverse direction.

[0104] The orientation of the magnetic system (also referred to as magnetic system orientation or magnetic orientation) is also referred to (e.g. in the context of the sputtering device) as the orientation of the sputtering device and / or (e.g. in the context of sputtering) as the sputtering direction (or emission direction).

[0105] The bisector of the opening angle 153 (if present) lies along the orientation 151r of the magnetic system. For example, each leg 153s of the opening angle 153 may extend through a section of the outer magnetic pole (e.g., the pole path). The legs 153s of the opening angle 153 may, for example, intersect on the target rotation axis (if present).

[0106] In the case of a longitudinally extended magnetic system, the outer pole 160 can have two linearly extending sections (also referred to as linear sections) between which the linearly extended inner pole 158 is arranged. The two linear sections can optionally differ from each other in their magnetization direction. For example, the magnetization directions of the two linear sections can be oblique to each other and / or at an angle to each other equal to the opening angle 153 of the magnetic system.

[0107] Fig. Figure 1C illustrates a sputtering device according to various embodiments 100c in a schematic side view or cross-sectional view, according to which preferably one or more than one sputtering device (e.g. a main sputtering device and / or a back sputtering device) of Example 1 and / or Example 12 and / or embodiments 100a may be arranged.

[0108] The sputtering device comprises the magnet system 154, which has an opening angle 153 and a magnet system orientation 151r. The sputtering device is further configured (e.g., by means of the bearing device) such that a section of the target can be arranged in a target area 156 of the sputtering device, which is located between the emission area 151 and the magnet system 154 of the sputtering device and / or whose cross-section has the shape of an annular segment. The magnet system of the sputtering device is configured to generate a magnetic field that extends into the emission area 151 and / or penetrates the (e.g., annular segment-shaped) target area 156.

[0109] An exemplary implementation of the sputtering device is set up to hold a tubular target, which is rotatably mounted about a rotary axis 155 (also referred to as the target rotary axis) (e.g., by means of a bearing device of the sputtering device). The magnet system orientation 151r can, for example, extend from the target rotary axis to the inner pole and / or be perpendicular to the target rotary axis 155. Alternatively or additionally, the angular vertex (the intersection point of the vertices 153s) can lie on the target rotary axis 155.

[0110] An exemplary implementation of the target rotation axis 155 is parallel to the transverse direction and / or transverse to the transport direction 501.

[0111] In embodiments with multiple sputtering devices, these and their components are distinguished from one another by means of an index i=[a, b, c, ...] for improved understanding herein.

[0112] Fig. Figure 2A illustrates two main sputtering devices facing each other (also referred to as a facing target configuration or FTK for short), according to various embodiments 200a, in a schematic side view or cross-sectional view (viewed along a transverse direction, as will be explained in more detail later), preferably providing the two sputtering devices of Example 1 and / or Example 12. The transverse direction is, for example, transverse to the transport direction 501 of the substrate and / or the direction of gravity, and / or is parallel to the longitudinal extent of the inner pole and / or to the target rotation axis (if present).

[0113] For easier understanding, reference is made to one or more reference planes, of which, for example, a first reference plane 131 and a second reference plane 133 may be perpendicular to each other.

[0114] Exemplary implementations of the first reference level 131 are one or more than one of the following: - perpendicular to a gravitational direction, such that the normal vector of the first reference plane 131 is parallel or antiparallel to the gravitational direction, and / or - a plane of symmetry with respect to which the first sputtering device and / or the second sputtering device (or at least their magnet system, target and / or external poles) are arranged in a mirror-symmetric manner; - parallel to the magnetic alignment (i.e., alignment of the magnetic system) of one or more than one of the two main sputtering devices, and / or - extends through the inner pole of one or more of the two main sputtering devices, and / or - extends through the target rotation axis (if present) of one or more of the two main sputtering devices, and / or - extends parallel to a transport path and / or the transport direction 501 of the transport device (not shown) (along which the substrate can be transported).

[0115] Exemplary implementations of the second reference level 133 are one or more than one of the following: - parallel to the direction of gravity, so that the normal vector of the second reference plane 133 is perpendicular to the direction of gravity, and / or - a plane of symmetry with respect to which the two main sputtering devices (or at least their target rotation axes, magnetic orientations and / or inner poles) are arranged in a mirror-symmetric manner to each other, and / or - extends perpendicular to the transport path of the transport device (not shown) (along which the substrate can be transported).

[0116] The emission chamber 151 is located between the two main sputtering devices (also referred to as the first sputtering device 152a and the second sputtering device 152b). Each sputtering device is configured to emit a coating material through the emission chamber 151 towards the other sputtering device during operation. Thus, the two sputtering devices coat each other with the coating material during operation, e.g., at least with a portion of the gaseous coating material. The remainder of the coating material is emitted and / or scattered laterally (then also referred to as scattering material), so that it escapes laterally from the emission chamber 151. The spatial distribution with which the coating material is emitted can be modeled, for example, using Lambert's cosine law.For example, there exists a solid angle distribution of each atomized part of the target surface from which the particles are emitted with an approximately cosine distribution, for example mainly perpendicular to the surface of the target, but also partly at very large angles to it.

[0117] The following refers to one of the sputtering devices and its magnet system as an example, whereby it can be understood that what is described here can apply to each of the two main sputtering devices.

[0118] The sputtering device has the magnet system 154a, 154b and the target area 156a, 156b, which is arranged between the emission area 151 and the magnet system 154a, 154b of the sputtering device.

[0119] The magnet system 154a, 154b has several magnetic poles (also referred to as magnetic poles), e.g., an inner pole 158 and an outer pole 160 extending along a closed path around the inner pole 158. The orientation 151a, 151b of the magnet system 154a, 154b can be directed towards the emission region 151, e.g., through the emission region 151 towards the respective other sputtering device of the two main sputtering devices (e.g., their magnet system and / or their target rotation axis). Alternatively or additionally, the orientation 151a, 151b of the magnet system 154a, 154b can be such that the first reference plane 131 is arranged between the legs of the opening angle of the magnet system and / or passes through an outer pole (or inner pole) of the magnet system (or is arranged between an inner pole and an outer pole). The alignment 151a, 151b of the magnet system 154a, 154b can be deflected even further from the axis of symmetry if required.

[0120] It can be understood that the target of the first sputtering device 152a and / or the second sputtering device 152b may preferably be tubular, but this is not necessarily required; it may also have a different geometry, e.g., plate-shaped. A tubular target can be rotated during operation, which promotes a more uniform process.

[0121] Optionally, the first magnet system 154a and the second magnet system 154b differ in their magnetization direction (e.g., of the inner pole 158 and / or outer pole 160) with respect to a reference (which may be, for example, the emission region), a configuration also known as inverse pole configuration. For example, the magnetization direction of the inner pole 158 of the first magnet system 154a may be directed towards the emission region, and the magnetization direction of the inner pole 158 of the second magnet system 154b may be directed away from the emission region. Alternatively or additionally, the inner pole 158 of the first magnet system 154a may be a magnetic north pole, and the inner pole 158 of the second magnet system 154b may be a magnetic south pole.

[0122] Fig. Figure 2B illustrates a coating system according to various embodiments 200b in a schematic side view or cross-sectional view, preferably configured according to embodiments 100a to 200a, whose sacrificial structure 120 (e.g., re-emission device and / or collection device) is fixedly arranged, e.g., relative to the emission area. Examples of such a collection device are provided by means of a chamber wall 804 (e.g., of a vacuum chamber housing or a housing cover).

[0123] An exemplary implementation of the vacuum chamber housing has several chamber walls, which form a monolithically connected vacuum chamber housing in which a cavity (also referred to as the chamber interior) is provided and which has a chamber opening that opens into the chamber interior. The emission region 151 is located in the chamber interior.

[0124] An exemplary implementation of the chamber lid has a chamber wall and is designed to be joined with the vacuum chamber housing to seal the chamber opening in a vacuum-tight manner.

[0125] Alternatively or additionally, the two sputtering devices are mounted on the chamber lid, so that they can be removed from the vacuum chamber housing together with the chamber lid.

[0126] An exemplary implementation of the chamber wall has two surface sections (also referred to as the first surface area and the second surface area), which, for example, face emission area 151 and / or define the interior of the chamber. The two surface sections differ from each other in their adhesion properties to the coating material and / or their roughness. The first surface area (also referred to as the collection area), which provides the collection device, has an adhesion-promoting configuration. The adhesion-promoting configuration of the collection area has a greater roughness than that of the second surface area. The second surface area can adjoin the collection area and / or surround it in a frame-like manner.

[0127] An exemplary implementation of the collection surface is produced by roughening the chamber wall, e.g., its first surface section. Exemplary processes by which the roughening is carried out include: forming (e.g., using a laser process) of the chamber wall, a subtractive process (e.g., using a laser process or grinding), and an additive process (e.g., by applying fibers and / or powder).

[0128] It can be understood that what has been described regarding the collection surface of the chamber wall can apply analogously to a different sacrificial structure design, which, for example, is provided separately from the chamber wall. For instance, the sacrificial structure may include a plate that provides the collection surface and is positioned at a distance from the chamber wall (e.g., fixed to the chamber wall and / or attached to it), for example, between the chamber wall and the emission area.

[0129] Optionally, the coating system can include the cleaning device (not shown) which is designed to clean the collection surface.

[0130] Fig. Figure 3A illustrates a sputtering device according to various embodiments 300a in a schematic side view or cross-sectional view, which provides the sacrificial structure and a cleaning device (then also referred to as a back-sputtering device), preferably comprising the sacrificial structure of Example 12 and / or according to Example 1 and / or according to embodiment 100a.

[0131] The back-sputtering device can be configured to hold a target as a sacrificial structure (also called a sacrificial target), for example, movable relative to the emission area. The sacrificial target can be, for example, plate-shaped or tubular. The cleaning device can have one or more magnetic systems and be configured to use the magnetic system to generate a plasma for cleaning the sacrificial structure (e.g., by atomization).

[0132] The back-sputtering device comprises one or more pairs of target area 156c and magnet system 154c, the orientation 151c of which is directed towards the target area 156c, the emission area 151, and / or the substrate holder 110. The target area 156c is, for example, arranged between the magnet system 154c and the two main sputtering devices 152a and 152b. The target area 156c is, for example, arranged between the magnet system 154c and the substrate holder 110. The target area 156c is, for example, arranged between the magnet system 154c and the emission area 151, or at least borders the emission area 151.

[0133] The back-sputtering device is configured (e.g., by means of a bearing device) such that a section of the sacrificial target can be positioned in the target area 156c, which, for example, borders the emission area 151. The magnet system 154c is configured to generate a magnetic field that extends into the emission area 151 and / or penetrates the target area 156c.

[0134] The opening angle 153c of the magnet system 154c can be adapted to the relative position of the two main sputtering devices 152a, 152b, for example, such that the back-sputtering device is configured to coat the first sputtering device 152a and / or the second sputtering device 152b. For example, the back-sputtering device can be configured to emit a larger material flow (e.g., specified as material quantity / time) towards the first sputtering device 152a and / or the second sputtering device 152b than through the emission area 151 between the two main sputtering devices 152a, 152b and / or towards the substrate holder 110.

[0135] An exemplary implementation of the opening angle 153c has a first leg that is directed towards the first sputtering device 152a (e.g., its target), and a second leg that is directed towards the second sputtering device 152b (e.g., its target). Alternatively, the first sputtering device 152a and / or the second sputtering device 152b are arranged at least partially (e.g., at least their magnet system and / or target rotation axis) between the legs of the opening angle 153c.

[0136] Fig. Figure 3B illustrates a back-sputtering device according to various embodiments 300b in a schematic side view or cross-sectional view, preferably the sacrificial structure of Example 12 and / or according to Example 1 and / or according to embodiment 100a.

[0137] The back-sputtering device has several magnet systems 154c, 154d, which are oriented obliquely to each other. For example, the back-sputtering device can be configured to hold a tubular sacrificial target which extends through the target area 156c, such that a section of the sacrificial target is located between the several magnet systems 154c, 154d and the emission area.

[0138] The magnet systems 154c, 154d can be adapted to the relative position of the two main sputtering devices 152a, 152b, for example, such that the back-sputtering device is configured to coat the first sputtering device 152a and / or the second sputtering device 152b. For example, the back-sputtering device can be configured to emit a larger material flow (e.g., specified as material quantity / time) to the first sputtering device 152a and / or the second sputtering device 152b than through the emission area 151 between the two main sputtering devices 152a, 152b and / or to the substrate holder 110.

[0139] An exemplary implementation of the back-sputtering device comprises a first magnet system 154c, the orientation 151c of which is directed towards the first sputtering device 152a (e.g., its target) and / or whose opening angle 153c has two legs, between which at least a part of the first sputtering device 152a is arranged. Alternatively or additionally, the back-sputtering device comprises a second magnet system 154d, the orientation 151d of which is directed towards the second sputtering device 152b (e.g., its target) and / or whose opening angle 153d has two legs, between which at least a part of the second sputtering device 152b is arranged.

[0140] Fig. Figure 3C illustrates a coating system according to various embodiments 300c in a schematic side view or cross-sectional view, with a sacrificial structure, preferably the sacrificial structure of Example 12 and / or according to Example 1 and / or according to embodiment 100a, which is movably mounted, e.g. by means of a transport device as a storage device and / or relative to the emission area 151.

[0141] An exemplary implementation (preferably as shown) of the sacrificial structure is in the form of a belt, e.g., comprising a closed belt 370 (also referred to as a sacrificial belt). The coating system can optionally include the sacrificial structure transport device (then also referred to as a belt conveyor), e.g., comprising several transport rollers 372, by means of which the sacrificial belt 370 is movably mounted. For example, the sacrificial belt 370 can be moved along a closed path during the operation of the two main sputtering devices 152a, 152b.

[0142] The outer surface of the sacrificial tape can, for example, be designed as an adhesion-promoting collection surface and / or be designed to be cleaned using the cleaning device (not shown). Alternatively or additionally, the parasitic coating can be mechanically removed using the cleaning device, e.g., by means of a scraper or, due to the curvature of the sacrificial tape, by means of the transport roller.

[0143] An exemplary implementation (not shown) of the sacrificial structure is plate-shaped, e.g., comprising a plate (also referred to as a sacrificial plate). The coating system can optionally include the transport device (then also referred to as a plate conveyor) by means of which the sacrificial plate is movably mounted. For example, the sacrificial plate can be moved during the operation of the two main sputtering devices 152a, 152b.

[0144] An exemplary implementation (not shown) of the sacrificial structure features filaments (e.g., a tangle of them) or is porous (e.g., a sponge). This increases the collection area and thus inhibits the detachment of the parasitic coating.

[0145] Fig. Figure 4A illustrates a coating system according to various embodiments 400a in a schematic side view or cross-sectional view, preferably providing the two main sputtering devices of Example 1 and / or Example 12.

[0146] The coating system comprises three sputtering devices, two of which are configured as main sputtering devices 152a and 152b (also referred to as the first and second main sputtering devices), between which the emission region is arranged and / or which are configured in FTK. The first main sputtering device 152a may have a first tubular target (also referred to as a tube target) (then also referred to as a tube magnetron 152a) in which the first magnet system 154a is arranged, which is aligned with the second main sputtering device 152b. The second main sputtering device 152b may have a second tubular target in which the second magnet system 154b is arranged, which is aligned with the first main sputtering device 152a.The three sputtering devices also include a third sputtering device, which is set up as a back-sputtering device 152c and which has a third tubular target as a sacrificial structure 120.

[0147] It can be understood that the two main sputtering devices 152a, 152b in the implementation shown may have tubular targets 154t (then also referred to as facing target tube targets), but this is not necessarily required.

[0148] An exemplary implementation of the coating system has one or more gas feeds 202 as a gas supply system, each gas feed having a gas channel and several gas outlets opening into the gas channel, each gas outlet being directed, for example, towards one of the sputtering devices and / or the emission area 151. For example, there may be two gas feeds with the back-sputtering device 152c located between them.

[0149] It can be understood that the back-sputtering device 152c can also have more or fewer than two magnet systems 154c, 154d, e.g., no magnet system at all. If the back-sputtering device 152c has exactly one magnet system, its opening angle can be set particularly large, e.g., greater than 80° or 120°. A large opening angle facilitates an increase in the distance between the center lines of the two parallel and straight racetracks. This ensures that the coating material atomized by the back-sputtering device 152c is deposited only (or at least a very large portion of it) on the two main sputtering devices 152a, 152b.

[0150] As an alternative to the back-sputtering device 152c, a tube can also be used as a collection structure 120, without a magnetic system being arranged in the tube or a plasma being generated by means of the tube. For example, the collection structure 120 (or at least its tube) can be electrically grounded or floating. Optionally, the tube can be rotatably mounted so that it can be set into rotation during operation, and / or roughened, which further increases the available surface area for collecting coating material.

[0151] An exemplary implementation of the collection structure 120 consists of a rotatably mounted tube with a sleeve, which serves as a material collector. Alternatively or additionally, the collection structure 120 consists of a (e.g., movably mounted) plate that collects the coating material. As described herein, the collection structure 120 does not necessarily have to be tubular, but can also be ribbon-shaped (see sacrificial ribbon 370), which collects the coating material.

[0152] An exemplary implementation of the substrate holding device 110 features the transport system, which has several transport rollers for transporting a substrate 102 along a transport path and / or in the transport direction 501. The transport path can, for example, be located at a distance from the emission area 151. Optionally, the transport device includes a substrate carrier by means of which the substrate, when placed in the substrate carrier, can be transported along the transport path and / or in the direction 101.

[0153] An exemplary implementation of the back-sputtering device 152c receives the coating material atomized by the two main sputtering devices 152a, 152b (e.g., magnetrons) and re-atomizes it, e.g., towards the two main sputtering devices 152a, 152b. This significantly reduces the loss of target material. If the longitudinal sections of the racetrack (also called racetrack lines) of the back-sputtering device 152c are not oriented radially towards the substrate 102, but only towards the two main sputtering devices 152a, 152b, the input of particle energy, e.g., from rapidly radially emitted particles (such as oxygen ions and / or reflected argon atoms), into the substrate is further inhibited.For example, only the coating material emitted from the back-sputtering device 152c to the substrate is that which is emitted in a direction outside the opening angle of the back-sputtering device and thus has a low particle energy.

[0154] Fig. Figure 4B illustrates a coating system according to various embodiments 400b in a schematic circuit diagram, preferably configured according to embodiments 100a to 400a. The coating system can, for example, have an electrical power source 482, 484 for each of the main sputtering devices 152a, 152b, which is configured to supply the main sputtering device with a direct current (DC) voltage.

[0155] Fig. Figure 5A illustrates a coating system according to various embodiments 500a in a schematic side view or cross-sectional view, preferably providing the two main sputtering devices of Example 1 and / or Example 12.

[0156] An exemplary implementation of the coating system comprises several gas feeds 402, 502 (also referred to as first and second gas feeds) as a gas supply system, each gas feed having a gas channel and several gas outlets opening into the gas channel. At least one first gas feed 402 and at least one second gas feed 502 can differ from each other in one or more of the following: a chemical gas composition and / or volumetric flow rate of reactive gas supplied by means of these; an orientation of the gas outlets; and / or a distance from the substrate holding device 110.

[0157] An exemplary implementation of the multiple gas feeds 402, 502 features two first gas feeds 402, between which the back-sputtering device 152c is arranged, and whose gas outlets are directed towards the back-sputtering device 152c and / or the emission area 151. Furthermore, the multiple gas feeds 402, 502 feature one or more second gas feeds 502, each of which is arranged between a main sputtering device 152a, 152b and the transport path of the transport device, and whose gas outlets are directed towards the main sputtering device and / or the emission area 151. For example, a larger volume flow of reactive gas can be supplied via the second gas feed(s) than via the first gas feed(s). This inhibits a reaction of the coating material on the back-sputtering device 152c.

[0158] An exemplary implementation of the coating system comprises a vacuum chamber 802 and two main sputtering devices 152a, 152b arranged therein. Furthermore, the coating system includes one or more shielding walls 504, which are arranged between one of the two main sputtering devices 152a, 152b and the substrate holding device 110 (or at least the transport path). An opening can be formed, for example, between two shielding walls 504, which exposes the substrate holding device 110 with respect to the emission area 151.

[0159] In general, it can be understood that the configuration of the magnetic fields of the two main sputtering devices 152a, 152b can be chosen differently. If the magnet systems (e.g., magnet bars) of the two main sputtering devices 152a, 152b are arranged according to the inverse pole configuration relative to each other, this favors the propagation of the plasma in the emission region 151 (e.g., between the targets 154t), which promotes the excitation of the gas particles and thus also the ionization, thereby improving the sputtering of the target material of the two main sputtering devices 152a, 152b.

[0160] If, however, the equivalent pole configuration is chosen, the two magnetic systems agree in the type of inner pole (e.g., north pole or south pole). Then the plasma concentrates mainly at the targets and / or racetracks, resulting in fewer charged particles in emission region 151.

[0161] The configuration of the magnet systems (e.g., magnet bars) of the back-sputtering device 152c can be chosen analogously such that the plasma from the emission region 151 between the main sputtering devices 152a, 152b is preferably drawn towards the back-sputtering device 152c, i.e., away from the substrate, which inhibits damage to sensitive substrates. Alternatively, the plasma of the back-sputtering device 152c can also be directed towards the substrate, which can offer advantages since electrically charged but kinetically low-energy particles can also lead to the desorption of adsorbates without mechanically damaging the underlying substrate itself through energetic bombardment.

[0162] Fig.Figure 5B illustrates a result of the method according to various embodiments 500b, which can be carried out, for example, using the coating system described herein, in a schematic side view or cross-sectional view, preferably set up according to embodiments 100a to 500a.

[0163] The result features a substrate cell precursor 550 as a substrate, which has a support 552 (e.g., made of glass or a wafer), an electrode 554 (e.g., made of indium tin oxide), and a photovoltaic layer stack 560 above that. Exemplary layers of the photovoltaic layer stack 560 have: an oxide layer 556 (e.g., made of nickel oxide), an electron transport layer 558 (e.g., made of carbon in a carbon modification, e.g., C60), and / or a perovskite layer 562 (then also referred to as perovskite-based).

[0164] By means of the method and / or the coating system described herein, the substrate cell precursor 550 can be coated, e.g. with a buffer layer 572 (e.g. made of tin oxide) and / or an additional electrode 574 (e.g. made of TCO), which is, for example, electrically conductive and / or optically transparent.

[0165] The following are various working examples (e.g. set up according to Example 12 and / or according to Example 1) that relate to what is described herein and shown in the figures.

[0166] According to Working Example 1 (e.g., a coating system), two sputtering devices are provided in FTK such that they are configured to mutually coat each other through the emission region. For this purpose (e.g., in FTK), the magnet system of each of the two sputtering devices is aligned relative to the other sputtering device such that at least one component of the other sputtering device is located between the two legs of the opening angle of the magnet system of the sputtering device. Examples of the at least one component of the other sputtering device include: the magnet system of the other sputtering device, the target rotation axis of the other sputtering device, the sputtering area of ​​the other sputtering device, and a section of the target of the other sputtering device.

[0167] According to Working Example 1 and / or Working Example 2 (e.g., a coating system), each of the two sputtering devices has a bearing device by means of which the target of the sputtering device is rotatably mounted. This improves the uniformity of the coating process.

[0168] According to one of the preceding working examples and / or working example 3 (e.g., a coating system), the two sputtering devices are identical in the chemical composition of their target (i.e., the target material), but this is not necessarily required. It can be understood that each of the two sputtering devices has a target made of the target material by means of which the coating material is provided. For example, the first sputtering device may have a first target made of a first target material, and the second sputtering device may have a second target made of a second target material, with the first and second target materials being identical in chemical composition or different from each other.

[0169] According to one of the preceding working examples and / or working example 4, the two sputtering devices are provided in FTK and arranged between a chamber lid and a substrate transport device. During operation of the two sputtering devices, some of the coating material is emitted as stray vapor toward the chamber lid, which would lead to its coating (also referred to as a parasitic coating) with the coating material. If the parasitic coating is not regularly removed, it can flake off and contaminate the emission area and / or the substrate. According to various embodiments, the sacrificial structure reduces the interruptions required for the removal of a parasitic coating.

[0170] According to one of the preceding work examples and / or work example 5, the sacrificial structure is configured as a collection structure and / or as a return emission structure. The collection structure has an adhesion-promoting collection surface which faces the emission area and / or adjoins it. The adhesion-promoting collection surface can, for example, have a roughness (e.g., mean roughness) of more than approximately 1 µm (e.g., approximately 2 µm, approximately 5 µm, approximately 10 µm, approximately 20 µm) and / or a roughness greater than that of a reference surface.

[0171] According to one of the preceding work examples and / or work example 6, the reference surface is a surface of a chamber wall which is adjacent to the collection surface (or at least the sacrificial structure).

[0172] According to one of the preceding work examples and / or work example 7, the reference surface is a surface of a chamber wall, wherein the sacrificial structure is arranged between the reference surface and the emission area.

[0173] According to one of the preceding work examples and / or work example 8, the reference surface is a surface facing away from the emission area, e.g., of the chamber wall and / or the sacrificial structure. Optionally, the collection surface and the reference surface are opposite surfaces of the chamber wall that provide the sacrificial structure.

[0174] According to one of the preceding work examples and / or work example 9, the return emission structure is set up to be cleaned by means of a cleaning device, for example when a coating process is carried out using the two sputtering devices in which the substrate is coated.

[0175] According to one of the preceding work examples and / or work example 10, the cleaning device is configured to thermally clean the back-emission structure, e.g., by supplying thermal power. For this purpose, the cleaning device may include an electrothermal transducer configured to generate thermal radiation and supply it to the back-emission structure, or it may be conductively coupled to the back-emission structure. For example, the transducer conductively coupled to the back-emission structure may include heating coils mounted on a plate that provides the back-emission structure.

[0176] According to one of the preceding work examples and / or work example 11, the collection surface is provided by roughening the chamber lid, e.g., its inner surface or at least a portion thereof. The chamber lid may, for example, have a sealing surface that surrounds the collection surface along a closed path. The sealing surface or an adjacent surface section of the inner surface may have a lower roughness than the collection surface. Alternatively or additionally, the collection structure may include filaments and / or pores and / or a fabric mounted on the inside of the chamber lid.

[0177] According to one of the preceding working examples and / or working example 12, the sacrificial structure has a circumferential belt and a plasma source which is arranged laterally to the belt and is configured to expose the belt to a plasma by means of which the belt can be etched and / or sputtered (also referred to as atomized).

[0178] According to one of the preceding work examples and / or work example 13, the coating system includes an actuator configured to influence (e.g., to start and / or stop) the cleaning process of the sacrificial structure in response to being controlled. For example, the actuator may be configured to influence the electrical power consumed by the cleaning process and / or the cleaning device.

[0179] According to one of the preceding work examples and / or work example 14, the coating system includes a back-sputtering device which features the sacrificial structure as a (e.g., tubular) target (also referred to as a sacrificial target). The back-sputtering device allows the coating material deposited on the sacrificial target as a parasitic coating to be atomized, e.g., towards the two sputtering devices, and thus returned to the coating process. This reduces the consumption of the coating material.

[0180] According to one of the preceding work examples and / or work example 15, the sacrificial target has a dopant of the coating material, which may, for example, be a semiconductor or consist of one. For example, each of the two sputtering devices may have a semiconductor target with which the substrate is coated, with the sacrificial target providing the semiconductor dopant. This makes it possible, for example, to increase the doping level of the layer on the substrate, e.g., beyond a solubility limit of the dopant in the semiconductor material. In essence, the sacrificial target can thus provide a material usable for the coating process, which reduces costs.

[0181] According to one of the preceding work examples and / or work example 16, the sacrificial target is not exposed to any reactive gas, so it does not react with the reactive gas during the coating process. This simplifies the atomization of the sacrificial target.

[0182] According to one of the preceding working examples and / or working example 17, the sacrificial structure includes a plate or a strip which is mechanically cleaned by a scraper as a cleaning device.

[0183] According to one of the preceding work examples and / or work example 18, the sacrificial structure is provided as a collection structure, which allows each of the two sputtering devices to have a planar target. While the scattered vapor is initially bound by the sacrificial structure as a parasitic coating, it can optionally be used to produce a target for the two sputtering devices in order to reduce costs.

[0184] According to one of the preceding working examples and / or working example 19, the magnet systems of the two sputtering devices are inverted relative to each other (also referred to as an inverse pole configuration). In this case, the magnet systems of the two sputtering devices differ in the type of their inner pole. For example, the magnet system of one of the two sputtering devices may have a magnetic north pole as its inner pole and a magnetic south pole as its outer pole, while the magnet system of the other sputtering device may have a magnetic south pole as its inner pole and a magnetic north pole as its outer pole. This improves plasma formation in the emission region. If, however, an inverse pole configuration is not chosen, the magnet systems of the two sputtering devices are identical (also referred to as an equivalent pole configuration) in the type of inner pole (e.g., north pole or south pole).

[0185] According to one of the preceding working examples and / or working example 20, the magnet system of the first sputtering device and / or the magnet system of the second sputtering device has an orientation that includes a directional component pointing away from the substrate holder and / or towards the sacrificial structure. This further reduces the particle energy to which the coating process on the substrate is exposed. For example, the magnet systems can be configured such that the linear sections of the racetrack closest to the substrate are horizontal.

[0186] According to one of the preceding work examples and / or work example 21, the substrate comprises a perovskite and / or a perovskite-based solar cell (also referred to as a perovskite solar cell) or a precursor thereof. Alternatively or additionally, a transparent, electrically conductive layer, e.g., an oxide layer (also referred to as a TCO layer), is formed by coating the substrate, for example, on a so-called buffer layer of the substrate. The layer can, for example, provide an electrical contact layer (also referred to as an electrode). If the buffer layer serves to protect underlying material of the substrate, its thickness can be reduced by coating it with the coating material, which is provided by two sputtering devices, thus increasing productivity and reducing costs.

[0187] According to one of the preceding working examples and / or working example 22, the substrate has an electron transport layer (e.g., comprising or consisting of a carbon modification, e.g., C60) on which a buffer layer (e.g., comprising or consisting of tin oxide) is formed or is formed (e.g., by coating), which, for example, covers a perovskite-based absorber (also referred to as a perovskite absorber). The buffer layer protects the electron transport layer (e.g., the C60) and the underlying material (e.g., the perovskite-based absorber) from bombardment by ions generated during the formation of a TCO layer by DC sputtering. According to various embodiments, the buffer layer is formed by means of the coating material, which is provided by means of two sputtering devices, thus increasing productivity and reducing costs; however, it can also be formed by means of ALD.

[0188] According to one of the preceding work examples and / or work example 23, a layer of tin oxide (also referred to as a tin oxide layer), e.g., a tin oxide buffer layer, is formed using two sputtering devices in FTK. This reduces damage to the material on which the tin oxide layer is formed. Alternatively or additionally, a layer of TCO is formed using two sputtering devices in FTK. This makes it possible to reduce the thickness of the underlying buffer layer (e.g., of tin oxide) on which the TCO layer is formed without risking damage to the underlying material.

[0189] According to one of the preceding work examples and / or work example 24, a layer of TCO is formed in FTK using two sputtering devices directly on the electron transport layer (e.g., having or consisting of a carbon modification such as C60). This makes it possible to omit the buffer layer and therefore saves costs.

[0190] According to one of the preceding work examples and / or work example 25, a deposition process is provided which enables the deposition of layers with very low ion bombardment or low particle energy while simultaneously achieving high utilization of the target material. Alternatively or additionally, if the deposition process is used to deposit a tin oxide layer, it can be more easily integrated into a coating system designed to deposit a layer of TCO.

[0191] According to one of the preceding work examples and / or work example 26, a layer (e.g., of TCO, a conductive layer, and / or a non-conductive layer, e.g., a dielectric layer) is deposited using two sputtering devices in FTK (also known as facing-target sputtering). This reduces the particle energy to which the (e.g., coated) substrate on which the deposition takes place is exposed. This improves the properties of the layer thus formed or of the solar cell formed using it, for example, compared to conventional DC sputtering.

[0192] According to one of the preceding work examples and / or work example 27, the specific resistance of the TCO layer is less than 2000 µ·Ohm·cm (or less than 1000 µ·Ohm·cm).

[0193] According to one of the preceding work examples and / or work example 28, facing target sputtering is supplemented by the sacrificial structure, which makes it possible to increase the amount of target material that contributes to coating the substrate (e.g., is incorporated into the layer) and / or makes it possible to inhibit contamination of the coating process by flaking off a more parasitic coating, which, for example, can contaminate a horizontally moving substrate.

[0194] According to one of the preceding work examples and / or work example 29, the atomized target material, which moves away from the substrate (e.g., towards the chamber wall, e.g., a chamber lid, to which the two sputtering devices may be attached), is captured by the sacrificial structure. This inhibits the formation of a parasitic coating that could detach from the vacuum chamber, e.g., its chamber wall (e.g., chamber lid).

[0195] According to one of the preceding working examples and / or working example 30, the substrate (or at least the substrate holding device) is located below the emission region (and / or the sacrificial structure) (i.e., along the direction of gravity behind the emission region and / or the sacrificial structure). Alternatively or additionally, the substrate is transported along a transport direction transverse to the direction of gravity (also referred to as horizontal transport). In this configuration, the benefit of the sacrificial structure is particularly high.

[0196] According to one of the preceding work examples and / or work example 31, facing-target sputtering is carried out using two sputtering devices arranged directly next to each other and / or each configured as a tubular magnetron whose magnet systems are aligned towards each other. Furthermore, the coating system includes an additional (e.g., third) tubular magnetron located above the emission region (also referred to as the space between the two sputtering devices). The third tubular magnetron is, for example, positioned between the emission region and a chamber wall (e.g., the chamber lid). The third tubular magnetron captures the coating material atomized by the two sputtering devices and re-atomizes it towards the two sputtering devices (e.g., tubular magnetrons).

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