Power semiconductor module

Abstract

Power semiconductor module, with: a core module (10) in which a first pair of elements (12), formed by connecting a diode element (12b) and a switching element (12a) in antiparallel, and a second pair of elements (14), formed by connecting a diode element (14b) and a switching element (14a) in antiparallel, are connected in series and the first pair of elements (12) and the second pair of elements (14) are sealed by resin; and a cover with terminals (20A) comprising a DC positive electrode terminal (22P), a DC negative electrode terminal (22N) and an AC terminal (22AC), wherein in the core module (10) a first electrode (D1) which is electrically connected to a positive-side electrode of the switching element (12a) which configures the first pair of elements (12), a second electrode (S1) which is electrically connected to a negative-side electrode of the switching element (12a) which configures the first pair of elements (12), a third electrode (D2) which is electrically connected to a positive-side electrode of the switching element (14a) which configures the second pair of elements (14), and a fourth electrode (S2) which is electrically connected to a negative-side electrode of the switching element (14a) which configures the second pair of elements (14) are exposed to a surface, The DC positive electrode connection (22P) of the cover with terminals (20A) is electrically connected to the first electrode (D1), the DC negative electrode connection (22N) of the cover with terminals (20A) is electrically connected to the fourth electrode (S2), The AC connection (22AC) of the cover with terminals (20A) is electrically connected to the second electrode (S1) and the third electrode (D2), the power semiconductor module has exactly four of the core modules (10), The AC terminal (22AC) of the cover with terminals (20A) comprises a first AC terminal (24AC1), a second AC terminal (24AC2), a third AC terminal (24AC3), and a fourth AC terminal (24AC4), wherein the first electrodes (D1) and the fourth electrodes (S2) in the four core modules (10) are each connected in parallel on an inner side of the cover with terminals (20A), wherein the second electrode (S1) and the third electrode (D2) of one module are connected to the first AC terminal (24AC1), the second electrode (S1) and the third electrode (D2) of another module are connected to the second AC terminal (24AC2), and the second electrode (S1) and the third electrode (D2) of another module are connected to the third AC terminal (24AC3).and the second electrode (D1) and the third electrode (D2) of a final module are connected to the fourth AC terminal (24AC4), , wherein the first electrode (D1), the second electrode (S1), the third electrode (D2) and the fourth electrode (S2) of each core module (10) are provided exposed to a surface of the respective core module (10) and each come into contact with a projecting electrode (26P, 26N, 26AC1, 26AC2) formed on an inside of the cover with terminals (20A) of the cover with terminals (20A), wherein the electrical wiring between each of the core modules (10) and the cover with terminals (20A) is formed solely by the contact of the electrodes (D1, D2, S1, S2, 26P, 26N, 26AC1, 26AC2) when the cover with terminals (20A) is placed on an upper part of each core module (10).

Description

Area

[0001] The present invention relates to a power semiconductor module suitable for use in a power equipment device. background

[0002] Patent reference 1, described below, discloses a power semiconductor module for railway vehicle applications, comprising a first pair of elements configured in antiparallel by connecting a diode element and a MOS-type switching element, the first pair of elements operating as a positive-side arm in a power converter device, and a second pair of elements configured in antiparallel by connecting a diode element and a MOS-type switching element, the second pair of elements operating as a negative-side arm in the power converter device. The first and second pairs of elements are housed in a single module and configured as a 2-in-1 module. The power semiconductor module has an external electrode terminal that allows the first and second pairs of elements to be connected in series.

[0003] Patent literature 2 discloses a semiconductor device comprising: a plurality of semiconductor modules, each containing a semiconductor circuit with a printed circuit board on which at least one or more semiconductor chips are mounted; and a module receiving housing that accommodates the plurality of semiconductor modules arranged in parallel. Within the module receiving housing, several pairs of positioning guide elements, which position and guide the semiconductor modules, are formed on opposing surfaces that form a module receiving area for receiving the semiconductor modules, such that they project inwards and face each other, allowing a longitudinal spacing between the multiple semiconductor modules to be selected. At both ends of each semiconductor module in the longitudinal direction, a pair of matching concave sections is formed, which are attached to the pair of positioning guide elements.

[0004] Patent literature 3 discloses a semiconductor device with semiconductor modules having external connection terminals protruding from a housing, busbars that electrically connect the specific external connection terminals of the plurality of parallel-arranged semiconductor modules, and a semiconductor module housing that surrounds and holds the plurality of semiconductor modules connected to the busbars. The busbars and the external connection terminals of the semiconductor modules are joined by laser welding.

[0005] Patent literature 4 discloses a semiconductor component comprising a power element, a driver circuit, a protection circuit for the power element, and a control connection arrangement with control terminals for control signals that are brought out from the driver circuit and the protection circuit to the outside of the housing. The control connection arrangement has the design of a socket-like connector for receiving pin- or knife-shaped terminals and has slot-shaped openings that allow the pin- or knife-shaped terminals to be inserted at least from above and from a side surface. List of patent literature Patent literature 1: Japanese patent JP 4 902 029 B1 Patent literature 2: US 2014 / 0 361 424 A1 Patent literature 3: DE 10 2014 210 604 A1 Patent literature 4: DE 100 36 619 A1 Brief description of the technical problem

[0006] The prior art described above discloses a circuit example for modifying the connection type of a power semiconductor module connected in series with a MOSFET or an IGBT for easy driving, and for applying the power semiconductor module to power converter devices for railway vehicles with different overhead line voltages. However, the prior art does not directly disclose the configuration of the power semiconductor module itself. Therefore, in the prior art, for application to various power semiconductor devices for railway vehicles, a circuit configuration is necessary that is obtained by combining a plurality of power semiconductor modules. There is room for improvement with regard to versatility.

[0007] The present invention was made in view of the foregoing and it is an object of the present invention to provide a power semiconductor module that is versatile in its application to various power converter devices for railway vehicles. Solution to the problem

[0008] To solve the problems and achieve the objective, a power semiconductor module according to claim 1 is proposed. Advantageous effects of the invention

[0009] According to the present invention, there is an effect that makes it possible to provide a power semiconductor module with high resistance voltage specifications, which has versatility and can bring about a mass production effect. Brief description of the drawings Fig. Figure 1 shows a diagram illustrating a schematic functional configuration of a power converter device mounted with a power semiconductor module according to an example for general explanation of the embodiment. Fig. Figure 2 shows a perspective view representing a schematic form of a core module, which is a basic unit in configuring the power semiconductor module according to the example for general explanation of the embodiment. Fig. Figure 3 shows a diagram illustrating the electrical wiring within the [unclear text]. Fig. 2 represents the core module shown. Fig. Figure 4 shows an exploded perspective view, which is an external configuration of a 500A-rated single-phase module, an example of the power semiconductor module according to the example for general explanation of the embodiment. Fig. Figure 5 shows a perspective view at the time when a cover with 20A connections, which is in Fig. 4(a) is shown, and is visually perceived from the back surface and the bottom side. Fig. Figure 6 shows a diagram illustrating electrical wiring within a cover with terminals located in the Fig. The 4 shown represents a 500A-rated single-phase module. Fig. Figure 7 is a perspective view showing the external configuration of a 1000A-rated single-phase module, which is an example of a power semiconductor module according to a second example. Fig. Figure 8 shows a diagram illustrating the electrical wiring within a cover with terminals in the 1000A-rated single-phase module, which is installed in Fig. 7 is shown. Fig. Figure 9 shows a perspective view representing the external configuration of a 500A-rated single-phase module, which is an example of a power semiconductor module according to a third example. Fig. Figure 10 shows a diagram illustrating the electrical wiring within a cover with terminals in the 500A-rated single-phase module, which is installed in Fig. 9 is shown. Fig. Figure 11 shows a perspective view representing the external configuration of a 1500A-rated single-phase module, which is an example of a power semiconductor module according to a fourth example. Fig. Figure 12 shows a diagram illustrating the electrical wiring within a cover with terminals in the 1500A-rated single-phase module, which is in Fig. 11 is shown. Fig. Figure 13 shows a perspective view representing an external configuration of a 500A-rated three-phase module, which is an example of a power semiconductor module according to a fifth example. Fig. Figure 14 shows a diagram illustrating the electrical wiring within a cover with terminals in the 500A-rated three-phase module, which is installed in Fig. 13 is shown. Fig. Figure 15 shows a perspective view representing the external configuration of a 500A-rated single-phase three-plane module, which is an example of a power semiconductor module according to a sixth example. Fig. Figure 16 shows a diagram illustrating the electrical wiring within a cover with terminals in the 500A-rated single-phase three-level module, which is installed in Fig. 15 is shown. Fig. Figure 17 shows a perspective view representing the external configuration of a 2000A-rated single-phase module, which is an example of a power semiconductor module according to a seventh example. Fig. Figure 18 shows a diagram illustrating the electrical wiring within a cover with terminals in the 2000A-rated single-phase module, which is in Fig. 17 is shown. Fig. Figure 19 shows a perspective view representing the external configuration of a composite module, which is an example of a power semiconductor module according to a claimed embodiment. Fig. Figure 20 shows a diagram illustrating electrical wiring within a cover with connections in the composite module, which is in Fig. 19 is shown. Description of the embodiment and illustrative examples

[0010] Power semiconductor modules according to the embodiment of the present invention and according to illustrative examples are described in detail below with reference to the drawings. First illustrative example.

[0011] Fig. Figure 1 shows a diagram representing a schematic functional configuration of a power converter device mounted with a power semiconductor module according to an example for general illustration of the embodiment. A configuration example of a power converter device 150 mounted on a rail vehicle 100 is shown. As in Fig. As shown in Figure 1, the power converter device 150 comprises a rectifier 110, a capacitor 120, and an inverter 130. The rail vehicle 100 is attached to a transformer 106, which is located at an input end of the power converter device 150 and connected to the rectifier 110 and to an electric motor 140, which is located at an output end of the power converter device 150 and connected to the inverter 130, and is configured to receive a power supply from the power converter device 150 to drive the vehicle. Note that the electric motor 140 is suitable as an electric induction motor or an electric synchronous motor.

[0012] One end of the primary winding of transformer 106 is connected to an overhead line 101 via a power collection device 102. The other end of transformer 106 is connected to a rail 104, which is at ground potential, via a wheel 103. Electrical power supplied by the overhead line 101 is fed into the primary winding of transformer 106 via the power collection device 102. Electrical power generated in a secondary winding of transformer 106 is fed into the rectifier 110.

[0013] The rectifier 110 has circuit units (hereafter referred to as "legs") in which positive-side arms, configured by semiconductor elements UPC and VPC (e.g., in a U-phase, UPC), and negative-side arms, configured by semiconductor elements UNC and VNC (e.g., in the U-phase, UNC), are each connected in series. This means that the rectifier 110 has a single-phase bridge circuit configured with two sets of legs (for the U-phase and for a V-phase). Note that, as explained below, the semiconductor elements UPC, VPC, UNC, and VNC generally have a configuration that includes a switching element and a diode element connected antiparallel to the switching element.

[0014] The rectifier 110 performs PWM control of the semiconductor elements UPC, VPC, UNC and VNC to convert an input AC voltage into a desired DC voltage and output the DC voltage.

[0015] The capacitor 120, which serves as a DC power supply, is connected in parallel, and the inverter 130, which receives the DC voltage of the capacitor 120 as input and converts the DC voltage into an AC voltage having some voltage and some frequency, and outputs the AC voltage, is connected to an output end of the rectifier 110.

[0016] Inverter 130 has legs in which positive-side arms, configured by semiconductor elements UPI, VPI, and WPI (e.g., in the U-phase, UPI), and negative-side arms, configured by semiconductor elements UNI, VNI, and WNI (e.g., in the U-phase, UNI), are connected in series. This means that inverter 130 is configured as a three-phase bridge circuit with three sets of legs (for the U-phase, for the V-phase, and for the W-phase). Note that, as in rectifier 110, the semiconductor elements UPI, VPI, WPI, UNI, VNI, and WNI generally have a configuration that includes a switching element and a diode element connected antiparallel to the switching element.

[0017] The inverter 130 performs PWM control of the semiconductor elements UPI, VPI, WPI, UNI, VNI and WNI to convert an input DC voltage into a desired AC voltage and output the AC voltage.

[0018] Note that in Fig. 1. As a suitable example of a power converter device according to the first embodiment, an example is described in which the power converter device is applied to an electric vehicle with an AC input. However, the power converter device can also be applied to an electric vehicle having a DC input, such as is regularly used in subways, urban electric vehicles, or similar applications. Note that because the configuration of the electric vehicle with a DC input is publicly known, a description of the configuration is omitted.

[0019] The power semiconductor module is described according to an example for the general explanation of the embodiment. Fig. Figure 2 is a perspective view showing a schematic form of a core module, which is a basic unit when configuring the power semiconductor module according to the example for general explanation of the embodiment. Fig. Figure 3 shows a diagram illustrating the electrical wiring within the [unclear text]. Fig. 2 represents the core module shown.

[0020] As in Fig. 2 and in Fig. As shown in Figure 3, a first element pair 12, formed by connecting a MOS field-effect transistor (MOSFET) 12a, which is a metal-oxide-semiconductor (MOS) type switching element, and a fly-wheel diode (hereinafter referred to as "FWD") 12b in antiparallel configuration, and a second element pair 14, formed by connecting a MOSFET 14a and an FWD 14b in antiparallel configuration, are sealed and formed with resin in a core module 10, which is the basic unit of the power semiconductor module. In this way, the core module 10, which is the basic unit, configures a so-called 2-in-1 module, in which two element pairs are housed in one module. Note that in this embodiment, the MOS type switching element is used as one switching element. However, other power semiconductor switching elements, such as an insulated gate bipolar transistor (IGBT), can also be used.

[0021] In the first element pair 12, a drain (a positive-side electrode) of the MOSFET and a cathode of the FWD are connected in the module, a connecting end of the drain and that of the cathode is pulled out to the outside of a section sealed by the resin to configure a first drain electrode D1 in the core module 10 (also referred to as the first electrode), a source (a negative-side electrode) of the MOSFET and an anode of the FWD are connected in the module, and a connecting end of the source and the anode is pulled out to the outside of the section sealed by the resin to configure a first source electrode S1 (also referred to as the second electrode) in the core module 10.Similarly, in the second element pair 14, a drain (positive-side electrode) of the MOSFET and a cathode of the FWD are connected in the module; a connecting end of the drain and cathode is extended to the outside of a section sealed by resin to configure a second drain electrode D2 (also referred to as the third electrode) in the core module 10; and a source (negative-side electrode) of the MOSFET and an anode of the FWD are connected in the module, and a connecting end of the source and anode is extended to the outside of the section sealed by resin to configure a second source electrode S2 (also referred to as the fourth electrode) in the core module 10. As in . Fig. As shown in Figure 2, the first drain electrode D1, the first source electrode S1, the second drain electrode D2, and the second source electrode S2 of the core module 10 are each provided and exposed to the surface of the core module 10, which is sealed by resin. This means that the electrodes corresponding to each of the positive-side and negative-side electrodes of the switching element provided in the core module 10 and electrically connected to the electrodes are provided on the surface of the core module 10.

[0022] The Fig. Figures 4(a)-(c) show an exploded perspective view representing an external configuration of a 500A-rated single-phase module, which is an example of the power semiconductor module according to the example for general explanation of the embodiment. The 500A-rated single-phase module, which is in Fig. 4(c) is configured by using a cover with 20A terminals, which are in Fig. 4(a) is shown, and of core module 10, which is in Fig. 4(b) is shown. The cover with terminals 20A has a box-shaped structure that is open on a second surface (in a Fig. 4. Example shown: the lower surface), which is opposite a first surface (in which in Fig. (See example 4, the upper surface). On the first surface, a positive planar electrode 24P, which configures part of a DC positive electrode terminal 22P, a negative planar electrode 24N, which configures part of a DC negative electrode terminal 22N, and an AC planar electrode 24AC, which configures part of an AC terminal 22AC, are formed. Note that at least one of the positive planar electrode 24P, the negative planar electrode 24N, and the AC planar electrode 24AC can be formed on a different surface than the first surface.

[0023] Fig. Figure 5 shows a perspective view at the time when the cover with 20A connectors, which are in Fig. 4(a) is visually perceived from the rear surface and the bottom. On the inside of the cover with 20A terminals, as shown in Fig. As shown in Figure 5, a positive projecting electrode 26P, a negative projecting electrode 26N, an AC projecting first electrode 26AC1 and an AC projecting second electrode 26AC2, which projects inwards, are formed, and a positive coupling electrode 28P for electrically connecting the positive projecting electrode 26P and the positive planar electrode 24P, a negative coupling electrode 28N for electrically connecting the negative projecting electrode 26N and a negative planar electrode 24N, and an AC coupling electrode 28AC for electrically connecting each of the AC projecting first electrode 26AC1 and the AC projecting second electrode 26AC2 and the AC planar electrode 24AC are formed. The positive protruding electrode 26P and the positive coupling electrode 28P configure part of the DC positive electrode terminal 22P.The negative protruding electrode 26P and the negative coupling electrode 28N configure part of the DC negative electrode terminal 22N. The AC protruding first electrode 26AC1, the AC protruding second electrode 26AC2, and the AC coupling electrode 28AC configure part of the AC terminal 22AC.

[0024] In the power semiconductor module according to the example for general illustration of the embodiment, when the cover with terminals 20A is placed on an upper part of the core module 10, i.e., a side where the first and second drain electrodes (D1 and D2) and the first and second source electrodes (S1 and S2) are exposed, the positive protruding electrode 26P, which is formed on the cover with terminals 20A, and the first drain electrode D1 come into contact, the negative protruding electrode 26N and the second source electrode S2 come into contact, the AC protruding first electrode 26AC1 and the first source electrode S1 come into contact, and the AC protruding second electrode 26AC2 and the second drain electrode D2 come into contact. Electrical wiring between the core module 10 and the cover with terminals 20A is formed by the contact of the electrodes. The 500A-rated single-phase module, which is in Fig. As shown in 4(c), it is obtained.

[0025] The Fig. Figure 6 shows a diagram illustrating the electrical wiring inside the cover with 20A terminals in the 500A-rated single-phase module, which is in Fig. 4 is shown. Fig. 6 is a circuit configuration of core module 10, which is located in Fig. Figure 3 is shown. On the inside of the cover with terminals 20A, the first drain electrode D1 of the core module 10 and the positive planar electrode 24P, which forms the DC positive electrode terminal 22P of the cover with terminals 20A, are connected by the positive protruding electrode 26P and the positive coupling electrode 28P, and the second source electrode S2 of the core module 10 and the negative planar electrode 24N, which forms the DC negative electrode terminal 22N of the cover with terminals 20A, are connected by the negative protruding electrode 26N and the negative coupling electrode 28N.The first source electrode S1 of core module 10 and the AC-projecting first electrode 26AC1, which forms the AC terminal 22AC of the cover with terminals 20A, are connected, and the second drain electrode D2 of core module 10 and the AC-projecting second electrode 26AC2, which forms the AC terminal 22AC of the cover with terminals 20A, are connected. The first source electrode S1 and the second drain electrode D2 are connected to an AC planar electrode 24AC, which forms the AC terminal 22AC, via the AC coupling electrode 28AC, which is electrically connected to the AC-projecting first electrode 26AC1 and the AC-projecting second electrode 26AC2.In this way, the electrical wiring between each of the DC positive electrode terminal 22P, the DC negative electrode terminal 22N, the AC terminal 22AC and the first and second drain electrodes (D1 and D2) and the first and second source electrodes (S1 and S2) is configured according to the connection. The core module 10 is configured.

[0026] The 500A-rated single-phase module, which is in Fig. 4 and in Fig. Figure 6 can be used as one leg for a phase that configures an inverter circuit, or as one leg for a phase that configures a rectifier circuit. For example, in the Fig. In the configuration shown in Figure 1, the inverter 130 can be used in a set of each of the semiconductor elements UPI and UNI, VPI and VNI, and WPI and WNI. The rectifier 110 can be used in a set of each of the semiconductor elements UPC and UNC, and VPC and VNC. Second example.

[0027] Fig. Figure 7 shows a perspective view representing an external configuration of a 1000A-rated single-phase module, which is an example of a power semiconductor module according to a second example. Fig. Figure 8 shows a diagram illustrating the electrical wiring within a cover with terminals 20B in the 1000A-rated single-phase module, which is installed in Fig. 7 is shown.

[0028] The 1000A-rated single-phase module is implemented as described in Fig. Figure 7 shows a pair of core modules 10, which are in Fig. 2 are shown, arranged side by side, and the cover with terminals 20B is placed on one side where electrodes in the two core modules 10 are exposed. On the inside of the cover with terminals 20B, the protruding electrodes and coupling electrodes (hereinafter referred to as "electrode elements") are arranged in the same way as those in the cover with terminals 20A, which are shown in Fig. The planar electrodes (24P, 24N, and 24AC) and the electrodes (D1, D2, S1 and S2) in the two core modules 10 are electrically connected via the electrode elements.

[0029] On the inside of the cover with 20B connectors, as shown in Fig. As shown in Figure 8, the two core modules 10 are connected in parallel. Therefore, a single-phase module has double the capacity, i.e., it is configured as a 1000A-rated single-phase module.

[0030] The 1000A-rated single-phase module, which is in Fig. 7 or in Fig. As shown in Figure 8, a positive-side arm and a negative-side arm can be used for one phase, forming an inverter circuit, or a positive-side arm and a negative-side arm can be used for one phase, configuring a rectifier circuit. For example, in the configuration shown in Fig. As shown in Figure 1, the inverter 130 can be used in a set of each of the semiconductor elements UPI and UNI, VPI and VNI, and WPI and WNI. The rectifier 110 can be used in a set of each of the semiconductor elements UPC and UNC and VPC and VNC. In both of these configurations, it is possible to ensure a current capacity twice that of the 500A-rated single-phase module. Third example.

[0031] Fig. Figure 9 shows a perspective view representing the external configuration of a 500A-rated single-phase module, which is an example of a power semiconductor module according to a third example. Fig. Figure 10 shows a diagram illustrating the electrical wiring within a cover with terminals 20C in the 500A-rated single-phase module, which is in Fig. 9 is shown.

[0032] The 500A-rated single-phase module is implemented as shown in Fig. Figure 9 shows a pair of the core modules 10, which are in Fig. 2 are shown, arranged side by side, and the cover with terminals 20B is on one side where electrodes are located in the two core modules 10. On the inside of the cover with terminals 20C, electrode elements are identical to those in the cover with terminals 20A, which are shown in Fig. As shown in Figure 5, the planar electrodes (24P, 24N, 24AC1 and 24AC2) and the electrodes (D1, D2, S1 and S2) in the two core modules 10 are electrically connected via the electrode elements.

[0033] On the inside of the cover with 20C connections, as shown in Fig. As shown in Figure 10, the two core modules 10 are connected in parallel, and, on the other hand, two AC terminals (S1 and D2) are not electrically connected to each other and are electrically connected to two individual AC terminals (22AC1 and 22AC2) in the cover with terminals 20C. Therefore, the 500A rated single-phase module is configured in which the 500A rated single-phase modules are connected in parallel.

[0034] The 500A rated single-phase module, which is used in the Fig. 9 and Fig. The power converter device shown in Figure 10 can be used as a bridge circuit that configures a single-phase inverter circuit, or it can be used in a bridge circuit that configures a single-phase rectifier circuit. For example, the configuration of the power converter device 150, which is shown in Figure 10, can be used as a bridge circuit that configures a single-phase rectifier circuit. Fig. As shown in Figure 1, it can be used directly in the rectifier 110. Fourth example.

[0035] Fig. Figure 11 shows a perspective view representing an external configuration of a 1500A-rated single-phase module, which is an example of a power semiconductor module according to a fourth example. Fig. Figure 12 shows a diagram illustrating the electrical wiring within a cover with terminals 20D in the 1500A-rated single-phase module, which is in Fig. 11 is shown.

[0036] The 1500A-rated single-phase module is implemented as shown in Fig. Figure 11 shows three of the core modules 10, which are in Fig. 2 are shown, arranged side by side, and the cover with terminals 20D is placed on one side where electrodes in the three core modules 10 are exposed. On the inside of the cover with terminals 20D, the electrode elements are the same as in the cover with terminals 20A, which are shown in Fig. The planar electrodes (24P, 24N and 24AC) and the electrodes (D1, D2, S1 and S2) in the three core modules 10 are electrically connected via the electrode elements.

[0037] On the inside of the cover with 20D connectors, as shown in Fig. As shown in Figure 12, the three core modules 10 are connected in parallel. Therefore, a single-phase module with triple capacity, i.e., the 1500A-rated single-phase module, is configured.

[0038] The 1500A-rated single-phase module, which is in Fig. 11 and in Fig. As shown in Figure 12, one leg can be used for each phase that configures an inverter circuit, or one leg can be used for one phase that configures the rectifier circuit. For example, in the Fig. In the configuration shown, the inverter 130 can be used in a set of each of the semiconductor elements UPI and UNI, VPI and VNI, and WPI and WNI. The rectifier 110 can be used in a set of each of the semiconductor elements UPC and UNC and VPC and VNC. In all configurations, it is possible to ensure a current capacity three times greater than that ensured when using the 500A-rated single-phase module. Fifth example.

[0039] Fig. Figure 13 shows a perspective view representing the external configuration of a 500A-rated three-phase module, which is an example of a power semiconductor module according to a fifth example. Fig. Figure 14 shows a diagram illustrating the electrical wiring within a cover with terminals 20E in the 500A-rated three-phase module, which is installed in Fig. 13 is shown.

[0040] The 500A-rated three-phase module is implemented as shown in Fig. Figure 13 shows three of the core modules 10, which are in Fig. 2 are shown, arranged side by side, and the cover with terminals 20E is placed on one side where electrodes in the three core modules 10 are exposed. On the inside of the cover with terminals 20E are electrode elements just like those in the cover with terminals 20A, which are shown in Fig. As shown in Figure 5, the planar electrodes (24P, 24N, 24AC1, 24AC2 and 24AC3) and the electrodes (D1, D2, S1 and S2) in the three core modules 10 are electrically connected via the electrode elements.

[0041] On the inside of the cover with 20E connectors, as shown in Fig. As shown in Figure 14, the three core modules 10 are connected in parallel, and, on the other hand, three AC terminals (S1 and D2) are not electrically connected to each other and are electrically connected to three individual AC terminals (24AC1, 24AC2, and 24AC3) in the cover with terminals 20E. Therefore, the 500A-rated three-phase module is configured by connecting three 500A-rated single-phase modules in parallel.

[0042] The 500A-rated three-phase module, which is in Fig. 13 and in Fig. The configuration shown in Figure 14 can be used in a bridge circuit that configures a three-phase inverter circuit, or in a bridge circuit that configures a three-phase rectifier circuit. For example, the configuration of the power converter device 150, which is shown in Figure 14, can be used in a bridge circuit that configures a three-phase rectifier circuit. Fig. As shown in 1, it can be used directly in the inverter 130.

[0043] All of the power semiconductor modules described above are application examples of a two-level circuit. However, the following examples describe application examples for three-level circuits. Sixth example.

[0044] Fig. Figure 15 shows a perspective view representing an outer configuration of a 500A-rated single-phase three-plane module, which is an example of a power semiconductor module according to a sixth example. Fig. Figure 16 shows a diagram illustrating the electrical wiring within a cover with 20F terminals in the 500A-rated single-phase three-level module, which is installed in Fig. 15 is shown. Note that in Fig. 16. For ease of use, three core modules 10 can be distinguished by adding suffixes “a”, “b” and “c”.

[0045] The 500A-rated single-phase three-level module is implemented as shown in Fig. 15 shown, three of the core modules 10, which are in Fig. 2 are shown, arranged side by side, and the cover with terminals 20F is placed on one side where the electrodes in the three core modules 10 are exposed. On the inside of the cover with terminals 20F are electrode elements just like those in the cover with terminals 20A, which are shown in Fig. As shown in Figure 5, the planar electrodes (24P, 24C, 24N and 24AC) and the electrodes (D1, D2, S1 and S2) in the three core modules 10 are electrically connected via the electrode elements. Note that the planar electrode 24C is an electrode that forms part of a DC center point terminal 22C.

[0046] On the inside of the cover with 20F connectors, as shown in Fig. As shown in Figure 16, the first drain electrode D1 of a first core module 10a is electrically connected to the three core modules 10 and a DC positive electrode terminal 22P of the cover with terminals 20F; the second source electrode S2 of the first core module 10a, the first drain electrode D1 of a second core module 10b and the DC center terminal 22C are electrically connected; the second source electrode S2 of the second core module 10b and a DC negative electrode terminal 22N of the cover with terminals 20F are electrically connected; and the first source electrode S1 of a third core module 10c, the second drain electrode D2 of the third core module 10c and the AC terminal 22AC are electrically connected.Among the three core modules, the first source electrode S1 of the first core module 10a, the second drain electrode D2 of the first core module 10a, and the first drain electrode D1 of the third core module 10c are connected, and the first source electrode S1 of the second core module 10b, the second drain electrode D2 of the second core module 10b, and the second source electrode S2 of the third core module 10c are connected by electrode elements designed to electrically connect the electrodes. By connecting the electrodes, the 500A-rated single-phase three-level module, which utilizes three 500A-rated single-phase modules, is configured.

[0047] The 500A rated single-phase three-level module, which is in Fig. 15 and Fig. As shown in Figure 16, it can be used in one leg for each phase that configures a three-level inverter circuit and one leg for one phase that configures a three-level rectifier circuit.

[0048] The power semiconductor module described above is an example that uses two or three core modules 10, which are the basic units. However, a power semiconductor module can be configured to use four or more core modules 10. An example of a power semiconductor module configured to use four core modules 10 is described below. Seventh example.

[0049] Fig. Figure 17 shows a perspective view representing the external configuration of a 2000A-rated single-phase module, which is an example of a power semiconductor module according to a seventh example. Fig. Figure 18 shows a diagram illustrating the electrical wiring within a cover with 20G terminals in the 2000A-rated single-phase module, which is installed in Fig. 17 is shown.

[0050] The 2000A-rated single-phase module is implemented as described in Fig. Figure 17 shows four of the core modules 10, which are in Fig. 2 are shown, arranged side by side, and the cover with terminals 20G is placed on one side where electrodes in the four core modules 10 are exposed. On the inside of the cover with terminals 20G, the electrode elements are the same as those in the cover with terminals 20A, which are shown in Fig. The planar electrodes (24P, 24N and 24AC) and the electrodes (D1, D2, S1 and S2) in the four core modules 10 are electrically connected via the electrode elements.

[0051] On the inside of the cover with 20G connectors, as shown in Fig. As shown in Figure 18, the four core modules are connected in parallel. Therefore, a single-phase module has four times the capacity, meaning that the 2000A-rated single-phase module is configured as follows.

[0052] The 2000A-rated single-phase module, which is in Fig. 17 and in Fig. As shown in Figure 18, it can be used in one leg for each phase that configures an inverter circuit, or in one leg for one phase that configures a rectifier circuit. For example, in the Fig. In the configuration shown, the inverter 130 can be used with a set of each of the semiconductor elements UPI and UNI, VPI and VNI, and WPI and WNI. The rectifier 110 can be used with a set of each of the semiconductor elements UPC and UNC, and VPC and VNC. In all configurations, it is possible to achieve a current capacity four times greater than that ensured when using the 500A-rated single-phase module. Design as claimed.

[0053] Fig. Figure 19 shows a perspective view representing an external configuration of a composite module, which is an example of a power semiconductor module according to a claimed embodiment. Fig. Figure 20 shows a diagram illustrating the electrical wiring within a cover with terminals 20H in the composite module, which is in Fig. 19 is shown.

[0054] The combined module, which is in Fig. The module shown in 20 is implemented by using four of the core modules 10, which are in Fig. 2 are shown, arranged side by side, and the cover with terminals 20H is placed on one side where electrodes in the four core modules 10 are exposed. On the inside of the cover with terminals 20H are electrode elements just like those in the cover with terminals 20A, which are in Fig. The planar electrodes (24P, 24N and 24AC) and the electrodes (D1, D2, S1 and S2) in the four core modules 10 are electrically connected via the electrode elements.

[0055] On the inside of the cover with 20H connectors, as shown in Fig. As shown in Figure 20, the four core modules 10 are connected in parallel, and, on the other hand, four AC terminals (S1 and D2) are not electrically connected to each other and are electrically connected to four individual AC terminals (24AC1, 24AC2, 24AC3 and 24AC4) in the cover with terminals 20H. Therefore, the compound module is configured with four 500A-rated single-phase modules connected in parallel.

[0056] In the combined module, which is in Fig. 19 and in Fig. As shown in Figure 20, a circuit configured by any three core modules 10 among the four core modules 10 can be used as a 500A-rated three-phase inverter circuit. The remaining core module 10 can be used as, for example, a chopper circuit.

[0057] As described above, in the power semiconductor module according to this embodiment, the power semiconductor module is configured by the core module 10, on a surface from which the electrodes, each connected to the positive and negative electrodes of the switching element of the first element pair and the positive and negative electrodes of the switching element of the second element pair, are exposed, and configured by the cover with terminals 20, in which the electrodes of the core module 10 are internally wired and pulled out as module terminals according to the respective use. Therefore, it is possible to configure an optimal power semiconductor module according to a current capacity and a two-level or three-level use simply by manufacturing a cover with terminals adapted to each use and changing the number of common core modules 10.Therefore, versatility is high and manufacturing costs can be reduced.

[0058] The power semiconductor module according to this embodiment allows for the configuration of various power converter modules, including the 500A-rated single-phase module, the 1000A-rated single-phase module, the 500A-rated single-phase module, the 1500A-rated single-phase module, the 500A-rated three-phase module, the 500A-rated single-phase three-level module, the 2000A-rated single-phase module, and the composite module (a 500A-rated three-phase + chopper circuit), by modifying the electrical wiring inside the cover with terminals using one or more core modules. Therefore, it is possible to reduce the manufacturing costs and size of the power converter device.

[0059] Note that in this embodiment, the example explained is one in which the rated current of a core module is 500 amperes. However, the rated current is not limited to 500 amperes. For example, a module with any rated current can be created by changing the size of the core module.

[0060] Since the material of the MOSFET and the FWD that configure core module 10 can be, for example, silicon (hereinafter referred to as "Si") or silicon carbide (hereinafter referred to as "SiC"), SiC, in particular, has the characteristic that it can be used at high temperatures. Therefore, it is possible to increase the permissible operating temperature of a module to a temperature higher than that of Si. Consequently, it is possible to further reduce the area occupied by chips in each element pair. It is also possible to further reduce the module size.

[0061] In the case of SiC, since the chip thickness can also be reduced, this is an additional advantage, as it decreases thermal resistance. Furthermore, when SiC is used as the FWD (Fully Heated Drive), the on-resistance voltage can be reduced. Therefore, a significant reduction in recovery losses is also achieved. Thus, even when the chip size is reduced, it is possible to minimize losses while preventing temperature increases.

[0062] Note that SiC is an example of a semiconductor known as a wide bandgap semiconductor. Besides SiC, for example, a semiconductor made using a gallium nitride-based material or diamond also qualifies as a wide bandgap semiconductor. Therefore, a configuration in which a wide bandgap semiconductor other than SiC is used is also part of the present invention.

[0063] In this embodiment, the power converter device for the rail vehicle is described. However, inverter and rectifier circuits with the same configuration are used in power converter devices for industrial machinery applications, electric vehicle applications, hybrid vehicle applications, power adjustment applications, and the like. Therefore, it goes without saying that the present invention is applicable to a large number of these applications.

[0064] Furthermore, in this embodiment, the application of the present invention to the AC-DC rectifier, the single-phase inverter, or the three-phase inverter is described as an example. However, it is also possible to apply the present invention to other power conversion devices, such as a boost converter or a buck converter. Reference symbol list

[0065] 10 Core module; 12 First element pair; 14 Second element pair; 12a, 14a MOSFET; 12b, 14b FWD; 16a, 16b, 16c, 16d Conductor wire; 20A, 20B, 20C, 20d, 20E, 20F, 20G, 20H Cover with terminals; 22P DC positive electrode terminal; 22N DC negative electrode terminal; 22C DC center point terminal; 22AC AC terminal; 24AC1 First AC terminal; 242AC2 Second AC terminal; 24AC3 Third AC power connection; 24AC4 fourth AC connection; 24P Positive planar electrode; 28P Positive coupling electrode; 24N Negative planar electrode; 26P Positive projecting electrode; 26N Negative projecting electrode; 26AC1 AC projecting first electrode; 26AC2 AC projecting second electrode; 28N Negative coupling electrode; 24AC AC planar electrode; 28AC AC coupling electrode; 100 Railway vehicle; 101 Overhead line; 102 Power collection device; 103 Wheel; 104 Rail; 106 Transformer; 110 Rectifier; 120 Capacitor; 130 Inverter; 140 Electric motor; 150 Power converter device; D1 First drain electrode; D2 Second drain electrode; S1 First source electrode; S2 Second source electrode; UNC, VNC, UNI, VNI, WNI, UPC, VPC, UPI, VPI, WPI semiconductor element.

Claims

[1] Power semiconductor module, with: a core module (10) in which a first pair of elements (12), formed by connecting a diode element (12b) and a switching element (12a) in antiparallel, and a second pair of elements (14), formed by connecting a diode element (14b) and a switching element (14a) in antiparallel, are connected in series and the first pair of elements (12) and the second pair of elements (14) are sealed by resin; and a cover with terminals (20A) comprising a DC positive electrode terminal (22P), a DC negative electrode terminal (22N) and an AC terminal (22AC), wherein in the core module (10) a first electrode (D1) which is electrically connected to a positive-side electrode of the switching element (12a) which configures the first pair of elements (12), a second electrode (S1) which is electrically connected to a negative-side electrode of the switching element (12a) which configures the first pair of elements (12), a third electrode (D2) which is electrically connected to a positive-side electrode of the switching element (14a) which configures the second pair of elements (14), and a fourth electrode (S2) which is electrically connected to a negative-side electrode of the switching element (14a) which configures the second pair of elements (14) are exposed to a surface, The DC positive electrode connection (22P) of the cover with terminals (20A) is electrically connected to the first electrode (D1), the DC negative electrode connection (22N) of the cover with terminals (20A) is electrically connected to the fourth electrode (S2), The AC connection (22AC) of the cover with terminals (20A) is electrically connected to the second electrode (S1) and the third electrode (D2), the power semiconductor module has exactly four of the core modules (10), The AC terminal (22AC) of the cover with terminals (20A) has a first AC terminal (24AC1), a second AC terminal (24AC2), a third AC terminal (24AC3) and a fourth AC terminal (24AC4), wherein the first electrodes (D1) and the fourth electrodes (S2) in the four core modules (10) are each connected in parallel on an inside of the cover with terminals (20A), wherein the second electrode (S1) and the third electrode (D2) of one module are connected to the first AC terminal (24AC1), the second electrode (S1) and the third electrode (D2) of another module are connected to the second AC terminal (24AC2), and the second electrode (S1) and the third electrode (D2) of another module are connected to the third AC terminal (24AC3).and the second electrode (D1) and the third electrode (D2) of a final module are connected to the fourth AC terminal (24AC4), wherein the first electrode (D1), the second electrode (S1), the third electrode (D2) and the fourth electrode (S2) of each core module (10) are provided exposed to a surface of the respective core module (10) and each come into contact with a projecting electrode (26P, 26N, 26AC1, 26AC2) formed on an inside of the cover with terminals (20A) of the cover with terminals (20A), wherein the electrical wiring between each of the core modules (10) and the cover with terminals (20A) is formed solely by the contact of the electrodes (D1, D2, S1, S2, 26P, 26N, 26AC1, 26AC2) when the cover with terminals (20A) is placed on an upper part of each core module (10).

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