METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT

Abstract

Method for manufacturing a semiconductor component with a radiation-emitting optical semiconductor chip (10, 11, 12, 13) or a plurality of radiation-emitting optical semiconductor chips (10, 11, 12, 13) comprising depositing the radiation-emitting optical semiconductor chip (10, 11, 12, 13) or the plurality of radiation-emitting optical semiconductor chips (10, 11, 12, 13) onto a deformable flat substrate (2), deforming the substrate (2) and permanently fixing the deformation, wherein the substrate (2) is deformed by buckling or bending over a mold (16, 17) and the buckled or bent substrate (2) is potted to fix the deformation, wherein the mold (16, 17) is removed after potting and the resulting cavity is filled.

Description

[0001] The invention relates to a method for manufacturing a semiconductor component with one or more radiation-emitting optical semiconductor chips.

[0002] Semiconductor devices with non-planar supports are known from US 2016 / 0 316 570 A1, US 2014 / 0 145 590 A1, JP 2013- 149 431 A and US 2016 / 0 309 595 A1.

[0003] Conventionally mounted radiation-emitting optical semiconductor chips, also known as LED chips, are deposited on a planar substrate so that their base faces the substrate. The footprint of such a component with three chips can be, for example, 3 mm × 3 mm. Approaches that allow more degrees of freedom in the arrangement of the optical semiconductor chips include substrates with upright semiconductor chips, so that the semiconductor chips are mounted at an angle on the substrate. Another approach involves flexible substrate films, so-called "flexible electronics" films. In MID3D technology, semiconductor chips are deposited on a three-dimensional substrate that can be shaped almost arbitrarily.

[0004] Guided by the task of providing an alternative solution, a method for manufacturing a semiconductor component and a semiconductor component that can be manufactured using this method are specified.

[0005] The method for manufacturing a semiconductor component with a radiation-emitting optical semiconductor chip or a plurality of radiation-emitting optical semiconductor chips comprises applying the radiation-emitting optical semiconductor chip or the plurality of radiation-emitting optical semiconductor chips to a deformable flat substrate, deforming the substrate and permanently fixing the deformation.

[0006] Flexible conductive traces are applied to the deformable substrate. The substrate is populated with semiconductor chips using a conventional standard process, and only after the chips are populated does it acquire its final shape, which is then fixed, or figuratively speaking, "frozen," in various ways. This process enables a spatially flexible arrangement of radiation-emitting semiconductor chips, also known as LED chips. The resulting semiconductor component has a reduced footprint compared to conventional semiconductor components with radiation-emitting semiconductor chips. The emission characteristics can be adapted to different applications with less effort than with conventional methods for angular chip mounting, which require significant effort, particularly in terms of assembly.

[0007] The semiconductor component is a mechanical unit that can be assembled from several elements. An electronic circuit and / or conductor structures are applied to the substrate, and contact means for controlling the radiation-emitting optical semiconductor chips are provided. In one embodiment, the semiconductor chips are embedded in a deformable plastic film.

[0008] The radiation-emitting semiconductor chip can, for example, be an LED chip with an active, light-emitting area on a semiconductor substrate.

[0009] In one implementation of this process, the substrate undergoes thermoplastic deformation, which it retains after cooling. In this way, deformation and fixation occur simultaneously. Thermoplastic deformation allows for complete freedom in the spatial arrangement of the semiconductor chips, as the substrate is deformed in such a way that the chips positioned on it are brought into their desired positions. Because standard assembly methods can be used before deformation, this process is cost-effective compared to MID3D technology. The semiconductor chip, or multiple semiconductor chips, on the substrate can then be encapsulated to protect them and further influence their emission characteristics. Combined with suitable sensors, this opens up a wide range of application possibilities.

[0010] In one implementation of the process, the substrate is deformed by deep drawing using compressed air and / or vacuum or by means of a press. This method also allows for the production of larger semiconductor components with modular characteristics, for example, those functioning as display and control elements. The deformation can be fixed by cooling the substrate or by coating the deformed substrate with a layer of plastic.

[0011] Alternatively, the substrate can be deformed by buckling or bending over a mold, and the bent or bent substrate can then be encapsulated to fix the deformation. The deformation can be aided by pressure and / or temperature. During deformation, the substrate can be moved towards the mold, and / or the mold can be moved towards the substrate in a manner similar to a punch. The mold is advantageously a three-dimensional structured mold. Examples include cones, pyramids, truncated cones, and truncated pyramids. Such a mold can have a wedge shape. The semiconductor chip or multiple semiconductor chips are encapsulated onto the substrate by encapsulation. Such a substrate is advantageously a flexible film. The mold can be a tool or remain within the semiconductor component. In one embodiment, the mold is removed after encapsulation, and the resulting cavity is filled.Alternatively, the molded part remains permanently embedded in the semiconductor component. Such a molded part can perform optical functions, for example, acting as a metal reflector or a lens.

[0012] The manufacturing process may include the creation of cutouts in the carrier. These cutouts can be made in the flat carrier before or after component placement using conventional separation methods, such as punching or laser cutting. Alternatively, the cutouts can be intentionally created through mechanical deformation, for example, at areas of material weakness. Such predetermined breaking points, for example, in the form of thinner film sections, tear open during deformation, creating holes in the carrier during the forming process. The cutouts expose areas of the molded part. However, not only cutouts but also transparent areas can be created in this way. In the latter case, the deformation causes the carrier film to become thinner and thus transparent, or at least more transparent.Thus, the deformation step allows areas of the support to be deformed into open or transparent areas.

[0013] At the cutouts, after deformation using a molded part, the part is not completely covered by the substrate, allowing the accessible area of ​​the molded part's surface at the cutout locations to interact with the emitted light from the semiconductor chips. The molded part can, for example, serve as a reflector or possess other advantageous properties that contribute optically to the system.

[0014] After the deformation is fixed, the substrate containing the semiconductor chips is separated into individual semiconductor components. This separation in a final step allows for the efficient parallel production of a large number of semiconductor components in a single assembly.

[0015] In a semiconductor component manufactured in this manner, comprising one or more radiation-emitting optical semiconductor chips mounted on a substrate with flexible conductor tracks, which has been permanently deformed after the radiation-emitting optical semiconductor chip(s) have been deposited, the radiation-emitting optical semiconductor chip(s) are arranged at an angle to a base face of the semiconductor component. They can be positioned above or below the base face at varying distances from it. The base face lies in the plane of the originally flat substrate. It can be a bottom surface of the semiconductor component, in which edge regions of the substrate or areas of the substrate intended for contacting the semiconductor chips are located.

[0016] The flexible conductor tracks allow contact with the semiconductor chips and can withstand the deformation of the substrate and its possible associated stretching or compression without losing their electrical conductivity.

[0017] The substrate can comprise a thermoplastically deformed material, offering a high degree of freedom in deformation to arrange the semiconductor chips in space and thus influence their radiation characteristics. For example, the substrate can be deformed in such a way that it has a dome-shaped area rising above the base.

[0018] Advantageously, the carrier has a region that rises above or is recessed from the base and on which a radiation-emitting optical semiconductor chip, or at least a portion of the majority of radiation-emitting optical semiconductor chips, is arranged. This region can, for example, have a conical or frustoconical cross-section and is formed by folding or bending over a molded part. If this molded part remains in the component, the region that rises above or is recessed from the base is permanently attached to the molded part. In such a case, the carrier advantageously has cutouts so that the surface of the molded part can act on the radiation emitted by the chips through the cutouts, for example, as a reflector.

[0019] The substrate can have a wedge-shaped area with a kink at its apex that rises above the base. The kink is formed along a fold line. Such a substrate can be manufactured by folding and then potting the substrate. The majority of radiation-emitting optical semiconductor chips are arranged on both sides of the fold line to direct the radiation from the semiconductor chips on the wedge-shaped area into the horizontal plane.

[0020] Due to the deformation of the substrate, the semiconductor chips can be arranged at different heights above the base. A first semiconductor chip from the plurality of radiation-emitting optical semiconductor chips has a first distance to the base that is smaller than the second distance of a second semiconductor chip from the plurality of radiation-emitting optical semiconductor chips to the base.

[0021] In one embodiment, a potting compound on a substrate surface encloses the radiation-emitting optical semiconductor chip or multiple radiation-emitting optical semiconductor chips to protect the semiconductor chips and / or influence their emission characteristics. This can be achieved, for example, by a potting compound that changes the color of the radiation emitted by the semiconductor chips.

[0022] The potting compound can be layered, with the layers having different properties. A first layer of material, containing an active area of ​​one of several radiation-emitting optical semiconductor chips, can be positioned below or above a second layer of material, containing another active area of ​​one of several radiation-emitting optical semiconductor chips.

[0023] In one embodiment, one or more heat-dissipating areas can be arranged in the substrate beneath the radiation-emitting optical semiconductor chip or the plurality of radiation-emitting optical semiconductor chips. This improves heat dissipation, optionally supported by a heat-dissipating layer on the underside of the substrate or a heat-dissipating wedge.

[0024] The invention is illustrated below with reference to the drawing in the following figures, wherein the Fig. Figures 1A to 6B show a manufacturing process according to claim 1. Fig. 1A and Fig. Figure 1B shows a top view or sectional view of an embodiment of a flat, flexible support. Fig. 2A and Fig. Figure 2B shows a top view or cross-sectional view of the carrier after assembly. Fig. 3A and Fig. Figure 3B shows a top view or cross-sectional view of the bent, loaded carrier. Fig. 4A and Fig. Figure 4B shows a top view or sectional view of the bent, equipped carrier with potting compound. Fig. Figure 5 shows a sectional view of the bent, fitted carrier with potting compound and filled cavity. Fig. 6A and Fig. 6B shows the carrier's supervision during the isolation process. Fig. 7A and Fig. Figure 7B shows a three-dimensional view or top view of an embodiment of a semiconductor component. Fig. Figure 8 shows a three-dimensional view of another embodiment of a semiconductor component. Fig. Figure 9 shows a cross-section of another embodiment of a semiconductor component. Fig. Figure 10 shows a three-dimensional view of another embodiment of a semiconductor component. Fig. Figure 11 shows a top view of another embodiment of a populated, flat, flexible carrier. Fig. Figure 12 shows a sectional view of the bent, loaded carrier. Fig. Figure 13 shows a sectional view of another embodiment of a semiconductor component. Fig. Figure 14 shows a sectional view of another embodiment of a semiconductor component. Fig. Figure 15 shows a sectional view of another embodiment of a semiconductor component. Fig. 16A and Fig. Figure 16B shows a top and sectional view of another embodiment of a flat, flexible support. Fig. 17A and Fig. Figure 17B shows a top and sectional view of the equipped, flat, flexible carrier. Fig. 18A and Fig. Figure 18B illustrates the fabrication of another embodiment of a semiconductor component. Fig. Figure 19 shows a sectional view of another embodiment of a populated, flat, flexible carrier. Fig. Figure 20 shows a cross-sectional view of the deformed, loaded carrier. Fig. Figure 21 shows a top view of the deformed area of ​​the support. Fig. Figure 22 shows a sectional view of the deformed, equipped carrier with potting compound. Fig. Figure 23 shows a top view of another embodiment of a semiconductor component. Fig. Figure 24 shows a three-dimensional view of another embodiment of a semiconductor component. Fig. Figure 25A shows another embodiment of a semiconductor component. Fig. 25B and Fig. 25C shows excerpts of the exemplary embodiment from Fig. 25A. Fig. Figure 26 illustrates the manufacturing of a semiconductor component. Fig. Figures 27A to 27E illustrate the steps of the manufacturing process. Fig. Figure 28 shows an embodiment of the finished semiconductor component. Fig. Figure 29 illustrates various elements that can be layered on top of each other during deformation. Fig. Figures 30A to 30C show exemplary embodiments of a semiconductor component.

[0025] Fig. Figures 1A to 6B illustrate the manufacture of an exemplary embodiment of a semiconductor component using its intermediate products in top and sectional views.

[0026] Fig. 1A and Fig. Figure 1B illustrates a preparatory step using a top view and a sectional view of a flat, flexible carrier 2. The carrier 2 is provided for a large number of semiconductor components, which can be manufactured in parallel in a batch until the semiconductor components are separated. In the Fig. 1A and Fig. Figure 1B shows a carrier section for the production of two semiconductor components.

[0027] The carrier 2 has a bottom and top surface 21, 23 and can be designed as a flexible film with conductor structures applied to it. Such a film is also referred to as a "flexible electronics" film. Folded edges 41, 42, 43 are incorporated into this film. In this embodiment, the carrier 2 has parallel folded edges 41, 42, 43, which can be formed by a weakening or tapering of the carrier material. The subsequent semiconductor component comprises a group of three folded edges 41, 42, 43, of which, in this embodiment, the two outer folded edges 42, 43 are equidistant from the central folded edge 41. Contact means 6 are provided outside the two outer folded edges 42, 43. These allow the subsequent semiconductor component to be controlled at externally accessible areas of the contact means 6, which are located on the underside 21 of the carrier.The contact means 6 are designed as vias in the carrier 2 in order to establish an electrical connection via conductor tracks 8 (in the . Fig. 1A and Fig. 1B not shown) to enable on the carrier top 23.

[0028] Fig. 2A and Fig. Figure 2B illustrates the assembly and contacting of the substrate 2 in a subsequent manufacturing step. After the application of flexible conductive traces 8 to the substrate 2 (for clarity, only one is shown as an example), radiation-emitting semiconductor chips 10 are applied to the substrate 2 and electrically connected to the conductive traces 8. The flexible conductive traces 8 do not tear when the substrate 2 is deformed and thus stretched or compressed. This can be achieved, for example, by a meandering or zigzag pattern. The conductive traces 8 form conductive structures by means of which the semiconductor chips 10 are contacted in such a way that each semiconductor chip 10 can be individually addressed via the contact means 6. When the semiconductor component is configured as an optical sensor, radiation-detecting semiconductor chips 10 are also applied to the substrate 2 in addition to the radiation-emitting semiconductor chips 10.

[0029] In this embodiment, the semiconductor chips 10 comprise red, green, and blue emitting semiconductor chips 11, 12, 13, which are mounted on the carrier 2 and are arranged in two rows on both sides of the central fold edge 41. Eight semiconductor chips 10 are provided for each semiconductor component. The semiconductor chips 10 have active areas on their upper surface from which the colored light is emitted.

[0030] Fig. 3A and Fig. Figure 3B illustrates a folding step in which the support 2 is folded over a wedge 16, as an embodiment of a molded part, along the fold edges 41, 42, 43, so that a wedge-shaped support area 18 is created following the shape of the wedge 16. Fig. Figure 3A shows a top view of the folded carrier 2 for four subsequent semiconductor components. Fig. Figure 3B shows the sectional view for a later semiconductor component.

[0031] The semiconductor chips 10 are arranged on the side walls of the wedge-shaped area 18. The areas outside the outer fold edges 42, 43 are folded in the opposite direction so that these areas lie in one plane. The underside of the carrier of these areas, in which the contact means 6 are also arranged, forms a base 26 of the subsequent semiconductor component.

[0032] Due to the folding, the semiconductor chips 10, which were previously arranged side by side in one plane, now lie at an angle to both sides of the fold edge 41 above the base 26. Their active areas on the upper surfaces of the chips no longer point upwards but laterally away from the side surfaces of the wedge-shaped area 18. The folding shapes the carrier 2 in such a way that a significant proportion of the radiation from the semiconductor chips 10 is directed into the horizontal plane. The deformation of the carrier 2 results in the semiconductor chips 10 being arranged at a height offset from the base 26.

[0033] In a subsequent potting step, the folded carrier 2 is fixed in its position by a potting 20. Fig. Figure 4A shows a top view of the folded carrier 10 for six subsequent semiconductor components. Fig. Figure 4B shows the sectional view for a later semiconductor component.

[0034] The potting compound 20 encapsulates the semiconductor chips 10 on the top side of the carrier 2, fixes the folded carrier 2 in its position, and provides mechanical stabilization. The potting compound material can be silicone.

[0035] Alternatively, the molded part can also become part of the semiconductor component; it is then not removed. In such a design, the populated carrier 2 with the chips 10 is deformed over the molded part in a device for deformation, for example by means of pressure and / or temperature; the latter remains in the deformed carrier 2, so that, for example, a hybrid part consisting of the metal mold and the insert is obtained.

[0036] In the following, in the sectional view of the Fig. In step 5, the carrier 2 with casting 20 is temporarily turned over, the wedge 16 is removed and the cavity created in the wedge gap is filled with a filler 22 to achieve mechanical stabilization.

[0037] In the singulation step, illustrated in the overhead views of the Fig. 6A and Fig. 6B, the carrier 2 with potting compound 20 is separated into semiconductor components. This can be achieved by a separation step along a separation line 24 transverse to the fold edges 41, 42, 43, as illustrated in Fig. 6A, and a subsequent separation step along a separation line 24 parallel to the fold edges 41, 42, 43, illustrated in Fig. 6B, or vice versa. Suitable separation methods include sawing or laser cutting.

[0038] Fig. 7A and Fig. Figure 7B shows the semiconductor component manufactured in this way in a three-dimensional representation or as a top view.

[0039] The semiconductor component comprises eight radiation-emitting optical semiconductor chips 10 on the flexible substrate 10, which has been deformed such that the semiconductor chips 10 are arranged at an angle to the base 26 of the semiconductor component. The flexible substrate 2 has a wedge-shaped area 18, on the side walls of which, on both sides of the folded edge 41, the semiconductor chips 10 are arranged. The deformation of the substrate 2 results in the semiconductor chips 10 being offset vertically. The semiconductor component is an SMD component.

[0040] The semiconductor component in this embodiment is a volume emitter that radiates in all directions above the base 26; however, due to the positioning of the semiconductor chips, the radiation is emitted primarily towards both sides of the wedge wall. This semiconductor component can be used as an RGB light source, since different colored chips 10 are combined in a single volume emitting component. The component is a volume emitting SMD component for use as an RGB package or for integration into a package, similar to a chip.

[0041] The semiconductor component has a smaller footprint than conventional semiconductor components with a flat substrate on which a comparable number of semiconductor chips are mounted. The footprint of an example semiconductor component with eight semiconductor chips on the folded substrate can be 1.5 mm × 1.5 mm.

[0042] Furthermore, the manufacturing process described above allows for flexible adjustment of the emission characteristics, for example, by selecting the angle between the wedge surfaces. The color of the light emitted by the semiconductor component can be influenced by the angle and the setting of the chromaticity point. Additionally, the semiconductor component makes it possible to avoid light traps.

[0043] Fig. Figure 8 shows another embodiment of a semiconductor component. To avoid repetition, only the differences from the one shown in the Fig. 7A and Fig. The embodiment shown in Figure 7B is described. The semiconductor component is also a volume emitter, but it has only four semiconductor chips 10. A red and a green chip are arranged on one side of the folded edge 41, offset vertically from the base 26; a blue and a green chip are arranged on the other side of the folded edge 41, offset vertically from the base 26.

[0044] Fig. Figure 9 shows another embodiment of a semiconductor component in cross-section. To avoid repetition, only the differences from the one shown in the Fig. 7A and Fig. The embodiment shown in Figure 7B is described. The semiconductor component is also a volume emitter, but it has a frustoconical region that rises above the base 26. The frustoconical region not only has sloping sides but also a plateau-shaped region parallel to the base. A chip 10 arranged on the plateau-shaped region radiates upwards, so that the radiation pattern in this embodiment is directed laterally and upwards.

[0045] Fig. Figure 10 shows another embodiment of a semiconductor component, which differs from the one described in the Fig. 7A and Fig. Figure 7B is distinguished by a lateral frame 28 around the casting 20. Such a frame 28 can be manufactured before the singulation step by filling continuous separation grooves, for example with titanium dioxide TiO2, which do not extend to the underside of the carrier 2 (the separation grooves run along the in Fig. 6A and Fig. 6B (dividing lines shown) 24.) The separation trenches can be saw trenches. Thus, this embodiment results in a complete RGB package. Alternatively or additionally, the application of a reflective layer or an opaque layer to the side walls of the potting compound 20 after the singulation step is conceivable.

[0046] By using different colored semiconductor chips 10 in a semiconductor component with the frame 28, which is formed, for example, by TiO2 potting, an RGB light source is formed. The frame 28 has a directional effect on the emission characteristics by directing the emitted light upwards.

[0047] Fig. 11 and Fig. Figure 12 illustrates the steps for manufacturing another embodiment of a semiconductor component using the intermediate products. To avoid repetition, only the differences from the one described in the Fig. The manufacturing processes described in sections 1A to 6B are described, along with the resulting differences between the semiconductor component manufactured in this way and the one described in the Fig. 7A and Fig. The semiconductor component shown in 7B is described.

[0048] Fig. Figure 11 shows a top view of an embodiment of an already populated carrier 2. Besides the central folded edge 41, it has two further parallel folded edges 42, 43, 44, 45 on both sides, as well as outer folded edges 46, 47, along which the boundary of the subsequent semiconductor component runs. In comparison to the one in the Fig. 1A and Fig. In the carrier 1 shown in 1B, this embodiment is provided with further folded edges 44, 45, 46, 47 to create inclined package walls 52 of the subsequent semiconductor component.

[0049] Along the middle and outer fold edges 41, 54, 47, the carrier is folded over a wedge 16, as shown in Fig. Figure 12 illustrates this. Along the intervening fold edges 42, 43, 44, 45, the material is folded in the opposite direction, so that the support area between them runs along the base 26 of the future semiconductor component. The semiconductor chips 10 are erected by the wedge-shaped support area 18 that rises above the base 26. The support areas facing the wedge-shaped area 18 with the semiconductor chips 10 on both sides of the wedge-shaped area 18 form inclined side walls 52 of the future semiconductor component after separation along the outer fold edges 46, 47. This basic cell of the future package is illustrated by a frame 50. After the folding described above, a potting compound 20 is applied, and the further components associated with the Fig. The steps described in 1A to 6B were carried out. The cavity created by removing the wedge 16 under the outer fold edges 46, 47 does not need to be filled.

[0050] By using different colored semiconductor chips 10 in a semiconductor component with, for example, TiO2 encapsulation, straight or, as described above, slanted walls 52, an RGB light source is formed. Such a package emits light primarily upwards, which is also referred to as top-emitting. It can be an SMD package.

[0051] Fig. Figure 13 shows another embodiment of a semiconductor component in a sectional view. To avoid repetition, only differences from the one shown in the Fig. 7A and Fig. The embodiment shown in 7B is described.

[0052] This embodiment features three blue-emitting semiconductor chips 12 arranged one above the other on both sides of the folded edge 41. The potting compound 20 has several layers 31, 32, 33, which influence the emission of the semiconductor chips 12 arranged therein in different ways. The layers 31, 32, 33 are arranged such that the active areas of the semiconductor chips 12 are positioned in different layers 31, 32, 33. The active areas of the upper semiconductor chips 12 are located in the upper potting layer 31. The active areas of the middle semiconductor chips 12 are located in the middle potting layer 32. The active areas of the lower semiconductor chips 12 are located in the lower potting layer 33.

[0053] The choice of materials for the encapsulation layers 31, 32, 33 can selectively influence the emission characteristics of the active areas arranged therein. In this embodiment, all semiconductor chips 12 emit blue light. The upper layer 31 is a clear encapsulation. The middle layer 32 is an encapsulation with green quantum dots, which are excited to glow green by the light emitted by the semiconductor chips 12. The lower layer 33 is an encapsulation with red quantum dots, which are excited to glow red by the light emitted by the semiconductor chips 12. The conversion in this arrangement results in emission in red, green, and blue. This creates a converting RGB component.

[0054] By using semiconductor chips 12 of the same color, arranged at different heights and a layered potting compound 20 with different colored phosphors, an RGB light source is formed.

[0055] Fig. Figure 14 shows another embodiment of a semiconductor component in a sectional view. To avoid repetition, only differences from the one shown in the Fig. 7A and Fig. The embodiment shown in 7B is described.

[0056] In this embodiment, the semiconductor chips 12 on both sides of the wedge-shaped area 18 also emit blue light. The encapsulation 20 contains a phosphor, so that the semiconductor component emits converted white light and functions as a white LED. This results in a white-light converting component. In this way, a white light source can be generated.

[0057] Fig. Figure 15 shows another embodiment of a semiconductor component in sectional view. To avoid repetition, only differences from the one shown in the Fig. 7A and Fig. The embodiment shown in 7B is described.

[0058] In this embodiment, the red semiconductor chips 11 are arranged on one side of the wedge-shaped area 18, and the blue and green semiconductor chips 12, 13 are arranged on the other side. Red semiconductor chips 11 have poor reflectivity in the blue spectral range. Therefore, it is advantageous to arrange the red semiconductor chips 11 on one side of the wedge-shaped area 18 and the blue and green ones on the other side. However, this affects the color depending on the angle across the base 26.

[0059] In an alternative embodiment (not shown), instead of the two semiconductor chips 10 on both sides of the fold edge 41, three can be provided on each side. In the exemplary embodiment, there are then three red semiconductor chips 11 on one side and one red, one green and one blue on the other side.

[0060] It is also conceivable to include a diffuser for light mixing directly in the potting compound.

[0061] Fig. 16A, Fig. 16B, Fig. 17A and Fig. Figure 17B illustrates the steps for manufacturing another embodiment of a semiconductor component. To avoid repetition, only the differences from the one described in the Fig. Figures 1A to 6B illustrate the manufacturing process and the semiconductor component produced in this way.

[0062] Fig. 16A and Fig. Figure 16B shows, in top and sectional views respectively, a provided carrier 2 which has improved thermal conductivity to enable improved heat dissipation of the semiconductor chips 10. For this purpose, thermally conductive sockets 36 are embossed into the carrier film at the locations where the semiconductor chips 10 will later be placed, and a metal foil or coating 38 is applied to the back of the carrier 21, which radiates the heat dissipated by the thermally conductive sockets 36. Fig. 17A and Fig. Figure 17B shows, in top view and section view respectively, the semiconductor chips 10 placed on the carrier 2 after assembly.

[0063] For heat dissipation, an electroplating filling can additionally or alternatively be provided in the wedge-shaped cavity of the carrier 5, as described in Fig. Figure 5 illustrates this. This filling further improves thermal conductivity.

[0064] The semiconductor components are of course not limited to the example number of 10 semiconductor chips in a single semiconductor component. Multiple chip rows and chip columns are possible.

[0065] Fig. 18A and Fig. Figure 18B illustrates the fabrication of a semiconductor component which has a carrier 2 with punched-out cutouts 60, enabling partial structuring. Fig. Figure 18A shows the flat carrier 2 with cutouts 60. In this case, the carrier 2 has several island-shaped square areas connected to each other by webs. The possible shape of the cutouts 60 is varied and can be adapted to the desired application and the subsequent deformation of the carrier 2. The chips 10 can be placed on the island-shaped square areas.

[0066] Fig. Figure 18B shows the carrier 2 deformed by the molded part 17, with the chips 10 attached to it. After deformation, the carrier 2 remains on the molded part 17, which can have an optical function, for example as a reflector, to influence the emission characteristics of the semiconductor chips 10. In this embodiment, the molded part 17 is dome-shaped. The deformation can be fixed by potting or, in the case of a thermoplastic carrier material, by simply cooling. The subsequent manufacturing steps are carried out as described in the preceding embodiments.

[0067] Fig. Figures 19 to 22 illustrate the manufacture of another embodiment of a semiconductor component using its intermediate products.

[0068] Semiconductor chips 13 are first placed on a flat thermoplastic substrate 2 with flexible conductor tracks 8, which is deformable under the influence of heat, and connected to the flexible conductor tracks 8. In this embodiment, the semiconductor chips 13 emit blue light. Fig. Figure 19 shows the flat substrate 2 with the semiconductor chips 13 mounted on it. The substrate material can be a polymer. Furthermore, the substrate 2 has contact elements 6 and conductive traces 8; the latter are in Fig. 19 are not shown for the sake of clarity.

[0069] Carrier 2 is heated and deformed. This deformation can be achieved, for example, by deep drawing the heated polymer into the desired shape using negative and / or positive pressure. A similar process is used for PET bottles. Fig. Figure 20 shows an exemplary dome-shaped deformation 19 of the support 2, such that not only does the dome-shaped area 19 rise above a base 26 of the subsequent semiconductor component, but so do the semiconductor chips 13, which are arranged on the dome-shaped area 19 and are now both offset vertically from each other and partially at an angle to the base 26. The cavity created by the deformation influences the emission characteristics of the semiconductor chips 13, resulting in good mixing of the light emitted by the different semiconductor chips. This is particularly advantageous when dealing with light of different colors.

[0070] Fig. Figure 21 shows the dome-shaped area 19 of the deformed support 2 in plan view. The flexible conductor tracks 8 are meandering so that they do not tear even when the support surface on which they are applied is stretched or compressed. This can also be achieved by a different non-linear orientation, for example a zigzag pattern.

[0071] By using a thermoplastic substrate 2 in combination with flexible conductor tracks 8, freeform shapes can be produced without creases. The deformation is retained after cooling. In a further step, the surfaces can be made radiation-stable by coating.

[0072] Fig. Figure 22 illustrates the step in which the semiconductor chips 13 are encapsulated after the deformation of the substrate 1 by introducing a layered encapsulation 20 into the dome-shaped area 19, which forms a cavity. The layers 31, 32, and 33 are made of different encapsulation materials to influence the emission characteristics of the active areas of the semiconductor chips 13 emitting within them. Thus, the emission characteristics of the blue semiconductor chips 13 are influenced in different ways. In this embodiment, the encapsulation 20 essentially serves as a converter and not necessarily for stabilizing the deformation. The lower semiconductor chip 13 is encapsulated with a first material, so that the emitted light is converted to red in the lower layer 33. The middle semiconductor chip 13 is encapsulated with a second material, so that the emitted light is converted to green in the middle layer 32.The upper semiconductor chip 13 is encapsulated with a clear potting compound. The upper layer 31 therefore has no or only a negligible influence on the emitted color. This results in red, green, and blue emission. Alternatively, it is conceivable that the converter is applied before deformation, so that the described state results after deformation. Nevertheless, the deformation is irreversible.

[0073] Other combinations of potting compound 20 and semiconductor chips 10 are also found in the thermoplastically deformed carrier 2, as are related to the Fig. 7A, Fig. 7B, Fig. 12, Fig. 13 and Fig. As described in section 14, it is conceivable that red, green, and blue semiconductor chips 11, 12, 13 can be provided with a clear encapsulation 20. Semiconductor chips of the same color can be provided with a converter encapsulation, for example, to form a white light source.

[0074] Semiconductor components with a thermoplastically deformed carrier 2 can also be manufactured in parallel in a composite process, in which the carrier areas for the subsequent semiconductor components are assembled in parallel, then deformed, possibly potted and finally separated.

[0075] Fig. Figure 23 shows another embodiment of a semiconductor component in a top view. In this embodiment, several dome-shaped cavities 19, whose shape may resemble a yogurt cup, are provided in the same semiconductor component. Three blue semiconductor chips 13 are arranged in each cavity, the emission of which is influenced by the layer-by-layer converter described above such that red, green, and blue light are emitted.

[0076] This semiconductor component is manufactured by mounting the semiconductor chips 10 onto the planar substrate 2 and then deforming the substrate to create a multitude of cavities into which the potting compound 20 is injected. Such a semiconductor component can have a display function.

[0077] Fig. Figure 24 shows a further embodiment of a deformed support in a three-dimensional view, in which the thermoplastic support 2 is deformed such that it has a dome-shaped region 19. In this free-form arrangement, the support 2 has a plurality of semiconductor chips in different colors, which are arranged both inside and outside the dome-shaped region.

[0078] The manufacturing processes described above allow the shape of the semiconductor component to be adapted for a wide variety of applications and combined with electronics. Furthermore, production is cost-effective, as standard assembly processes can be used for component placement. Only after this initial placement does the substrate undergo deformation.

[0079] In this way, semiconductor components can be manufactured that serve as a light source, allow a flexible geometric arrangement of the semiconductor chips 10, have a reduced footprint compared to conventional semiconductor components and can be used directly as CSP or as a light source in the package.

[0080] In designs where the semiconductor component is an RGB component, additional advantages arise such as homogeneous color emission regardless of the viewing angle, or the reduction of absorption by the red chips. This results in a homogeneous color impression in the near field. Individual chips are less noticeable than with conventional semiconductor components.

[0081] Such semiconductor components can be used in medical technology, for example as electronic patches with integrated sensors or for radiation therapy. Other potential applications include prosthetic implants, documentation of the healing process, and tracking of developmental milestones. Applications also exist in consumer electronics, such as in household appliances or freeform surfaces combined with electronics. In industrial technology, possible applications include robotics, human-machine interfaces, gripper simulation, and gripper control. Another area of ​​application is textiles with additional functions, so-called "smart textiles." These can, for example, warn of illnesses, transmit data, and store energy. Applications include encapsulation against environmental influences, as well as in the design and use of wristbands, not just for watches.

[0082] Fig. Figure 25A shows a further embodiment of a semiconductor component with a plurality of micro-LEDs as embodiments for semiconductor chips 10, which are arranged in a matrix. The micro-LEDs are connected to the adjacent micro-LEDs via flexible conductor tracks 8. The semiconductor chips 10, which are mounted on a substrate 2, are designed as micro-LEDs embedded in deformable plastic films. The films are formed as a sandwich to create the semiconductor component, which can also be considered a multifunctional light element, as shown in Figure 25A. Fig. 25A is indicated by the rounded shape after deformation.

[0083] Fig. Figure 25B shows a section of the semiconductor component in Fig. 25A, which is marked by the dashed line. The inset shows the connection of two micro-LEDs by flexible conductor tracks 8, which are shaped in a meandering pattern so that they do not break even when deformed. The micro-LEDs can, for example, have a base area of ​​approximately 10 pm × 10 pm and approximately 5 µm of flexible thin-film LED layers. Fig. Figure 25C shows examples of flexible conductor tracks 8 under magnification. The deformation leads to a pulling apart of the meandering loops.

[0084] Fig. Figure 26 illustrates the production of the semiconductor component, in which, as an embodiment, a film containing LED semiconductor chips is placed in a three-dimensional mold, for example, a metal mold, and encased in a rigid material to maintain its shape. The mold has a lower and an upper mold part 72, 74. The lower mold part 74 is a deep-drawing die onto which the carrier 2 with the semiconductor chips 10 is pressed and thus deformed by means of the upper hollow mold part 72. The upper mold part 72 has a recess 73 that corresponds to the shape of the final semiconductor component. The lower mold part 74 has a shape that corresponds to the final semiconductor component. During deformation, the upper mold part 72 moves over the lower mold part 74, so that the carrier 2 is pressed into the predetermined shape. This type of deformation is also referred to as deep drawing (using a press).

[0085] The Fig. 27A to 27E illustrate the steps of the manufacturing process using intermediate products. Fig. 27A shows the deformable carrier 2 with the LEDs in the thermoforming mold 74. Fig. Figure 27B shows the heating of the carrier 2 with the LEDs to deform it. Next, the deformation process takes place, in which the carrier is placed against the mold parts and thereby deformed. This can be achieved by pressing the upper mold part 72 together with the thermoforming mold 74, as already shown in Fig. 26 has been illustrated.

[0086] Alternatively, the deformation of the heated support 2 can also be achieved by applying pressure to the support 2 from above, i.e., on the side facing away from the deep-drawing die 74, and a vacuum from below, i.e., on the side facing the deep-drawing die 74, so that the support 2 deforms as shown in Fig. 27C illustrates this, and it clings to the shape and solidifies there, as in Fig. Figure 27D illustrates this. This can be achieved by cooling. Typically, a membrane 77 is applied to the side of the carrier 2 facing away from the deep-drawing die 74; this membrane is also deformed by pressure and vacuum. The described process is also known as vacuum deep drawing or vacuum deep drawing.

[0087] The deformation can be fixed alternatively or additionally by encasing the deformed support with a thin layer of plastic. This is in Fig. Figure 27E illustrates deep drawing using a press, as already described in connection with Fig. 26 described. The encasing can be carried out by introducing the encasing plastic into the mold after deformation, i.e. after the molded parts 72, 74 have been pressed together.

[0088] Fig. Figure 28 shows an embodiment of the finished semiconductor component. The method described above can be used to manufacture not only small semiconductor components, but also components that can have module size and function, such as display, control, and operating elements.

[0089] Fig. Figure 29 illustrates various elements that can be layered on top of each other during forming. Different elements are layered between the upper mold part 72 of the press mold or the membrane 77 and the thermoforming mold 74. A buffer layer 82, for example a silicone buffer, is provided on the upper mold part 72 or the membrane 77. A buffer insert 88 is applied to the thermoforming mold 74. Between these buffer layers 82 and 88, a molding foam, which may optionally contain electronic components, and the flexible carrier 2 with the LED semiconductor chips 10 and scratch-resistant and radiation-stable cover layers 84 are provided. These are formed and joined together to create the semiconductor device.

[0090] The Fig. 30A, Fig. 30B and Fig. Figure 30C shows embodiments in which chip contacts are designed to be flexible and planar after chip placement, as sketched in the figures. The contacts are then "frozen" after deformation and, in one embodiment, fixed on both sides in a mold.

[0091] The planar representations of embodiments in the Fig. 30A, Fig. 30B and Fig. 30C comprise a carrier substrate 2 on which conductive structures 92 and an ITO-based semiconductor chip 10 are deposited. Insulating structures 94, for example SiO2, are provided at least in lateral regions of the chip 10 and on carrier regions. In the exemplary embodiment in Fig.In embodiment 30B, an intervia adhesive 96 is provided between the insulating structures 94 and the carrier 2. In the exemplary embodiments, the chip 10 and the insulating structures 94 are covered by transparent contacts 98, on the side of which an n-pad 97 is provided. The pad sizes can be in the range of 10 µm, 15 µm, 20 µm, or 25 µm and are approximately 10 µm in diameter around the ITO-based chip.

[0092] The features of the exemplary embodiments can be combined. Reference sign 2 carriers 6 Contact materials 8 conductor track 10, 11, 12, 13 Semiconductor chip 16 wedge 17 Molded part 18 wedge-shaped area 19 domed area 20 potting 21 Underside 22 Fillers 23 Top 24 dividing line 26 Basic page 28 frames 31st, 32nd, 33rd shift 36 thermally conductive bases 38 Metal coating 41, 42, 43, 44, 45, 46, 47 folded edge 50 frames 52 Wall 60 excerpt 72, 74 Molded part 77 Membran 82, 88 buffer 84 cover layers 86 Molded foam 92 leading structures 94 insulating structures 96 Intervia adhesives 97 n-Pad 98 transparent contact

Claims

[1] Method for producing a semiconductor component with a radiation-emitting optical semiconductor chip (10, 11, 12, 13) or a plurality of radiation-emitting optical semiconductor chips (10, 11, 12, 13), comprising applying the radiation-emitting optical semiconductor chip (10, 11, 12, 13) or the plurality of radiation-emitting optical semiconductor chips (10, 11, 12, 13) to a deformable flat carrier (2), deforming the carrier (2) and permanently fixing the deformation, wherein the carrier (2) is deformed by buckling or bending over a mold part (16, 17) and the bent or bent carrier (2) is potted in order to fix the deformation, wherein the mold part (16, 17) is removed after potting and the resulting cavity is filled. [2] Method according to claim 1, comprising making cutouts (60) in the carrier. [3] Method according to one of the preceding claims, wherein the semiconductor chip (10, 11, 12, 13) or the plurality of semiconductor chips (10, 11, 12, 13) is cast onto the carrier (2). [4] Method according to one of the preceding claims, wherein the carrier (2) with the semiconductor chips (10, 11, 12, 13) is separated into semiconductor components after the deformation has been fixed.

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