Exposure device for a substrate with printed wiring, exposure method and manufacturing method for a substrate with printed wiring

Abstract

The present invention is an exposure device for a substrate with printed wiring for forming an exposure pattern for printed wiring by exposing a resist film formed on a substrate surface with the irradiation energy of a laser beam. The exposure device for a substrate with printed wiring is configured to perform a continuous irradiation of a mask and a substrate stage during the substrate exposure, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area to perform pattern exposure on a region of the substrate to be exposed. Consequently, an exposure device capable of accurately performing the exposure of a microfine pattern over the region of the substrate to be exposed is provided.

Description

TECHNICAL AREA

[0001] The present invention relates to an exposure device for a substrate with printed wiring, an exposure method and a manufacturing method for a substrate with printed wiring. STATE OF THE ART

[0002] Semiconductor package substrates are shifting from the "More than Moore" trend to the system-on-a-chip (SoC) trend, integrating the system into a single chip, and are being actively developed in line with this trend.

[0003] Furthermore, the configuration of the semiconductor package substrate becomes more complex and denser, and a device using an excimer laser was applied to the fabrication of a base substrate of the semiconductor package substrate.

[0004] As the semiconductor substrate becomes denser, the wiring within the substrate must also be very precise and become more multilayered. This thinning and multilayering of the wiring results in narrower and more complex conductor and space (CPS).

[0005] Furthermore, substrates with printed wiring must also exhibit microfine wiring patterns. To create a microfine wiring pattern on a substrate with printed wiring, a microfine pattern must first be formed in a resist film. Pattern exposure is generally used for this purpose.

[0006] To create a complex wiring pattern by pattern exposure, it is necessary to create an exposure pattern for microfine printed wiring.

[0007] Patent document 1, for example, discloses an exposure device that is able to align a substrate with printed wiring and a photomask very precisely. COUNTERPOINT LIST PATENT LITERATURE

[0008] Patent Document 1: JP 2017-132120 A SUMMARY OF THE INVENTIONAL PROBLEM

[0009] In particular, the production of a semiconductor package substrate requires a substrate with printed wiring and a high-resolution wiring pattern.

[0010] The present invention was carried out to solve the problems described above, and one object of it is to provide an exposure device for a substrate with printed wiring that is capable of accurately performing the exposure of a microfine pattern over an area of ​​the substrate to be exposed, an exposure method that is capable of accurately performing the exposure of a microfine pattern over an area of ​​the substrate to be exposed, and a substrate manufacturing method that is capable of producing a substrate with printed wiring in which a microfine exposure pattern is accurately formed over an area of ​​the substrate to be exposed. Solution to the problem

[0011] To solve the problems described above, the present invention provides, as an exposure device of a first aspect, an exposure device for a substrate with printed wiring for forming an exposure pattern for printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure device for a substrate with printed wiring comprises: a first optical functional unit comprising a laser light source that performs irradiation with the pulsed laser beam, and an optical shaping system that shapes an irradiation pattern of the laser beam from the laser light source into a rectangular shape; a second optical functional unit with a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed; and a substrate table that holds the substrate, wherein the mask comprises a mask irradiation area to be irradiated with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask, the substrate comprises a substrate irradiation area onto which the pattern is to be projected by the laser beam that has passed through the mask, the substrate irradiation area is smaller than the area of ​​the substrate to be exposed and The exposure device for a substrate with printed wiring is configured to perform a pass-through irradiation of the mask and substrate table during the exposure of the substrate, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area to perform a pattern exposure on the area of ​​the substrate to be exposed.

[0012] With such an exposure device, it is possible to precisely expose a microfine pattern over the area of ​​the substrate to be exposed.

[0013] Furthermore, such an exposure device does not require the use of high laser energy, can be configured cost-effectively without the use of an expensive laser light source and expensive optical elements, can suppress the deterioration of accuracy due to thermal drift of the laser beam, and can perform very accurate pattern exposure.

[0014] Furthermore, such an exposure device enables high-density irradiation because the substrate irradiation area can be made small for a single shot.

[0015] Furthermore, the present invention provides, as an exposure device of a second aspect, an exposure device for a substrate with printed wiring for forming an exposure pattern for printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure device for a substrate with printed wiring comprises: a first optical functional unit comprising a laser light source that performs irradiation with the pulsed laser beam, and an optical shaping system that shapes an irradiation pattern of the laser beam from the laser light source into a rectangular shape; a second optical functional unit with a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed; and a substrate table that holds the substrate, wherein the mask comprises a mask irradiation area to be irradiated with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask, the substrate comprises a substrate irradiation area onto which the pattern is to be projected by the laser beam that has passed through the mask, the substrate irradiation area is smaller than the area of ​​the substrate to be exposed, the mask and the substrate table are configured to operate synchronously in a plane direction that is essentially perpendicular to a direction of irradiation with the laser beam, in order to maintain a relatively corresponding positional relationship between them, and The exposure device for a substrate with printed wiring is configured to ensure that the mask and the substrate table operate synchronously during the exposure of the substrate, and to subject the mask and the substrate table to a continuous irradiation, with an irradiation position of the laser beam being fixed in order to perform a pattern exposure on the area of ​​the substrate to be exposed.

[0016] With such an exposure device, it is possible to precisely expose a microfine pattern over the area of ​​the substrate to be exposed.

[0017] Furthermore, such an exposure device does not require the use of high laser energy, can be configured cost-effectively without the use of an expensive laser light source and costly optical elements, can suppress the degradation of accuracy due to thermal drift of the laser beam, and can perform very precise exposure. Since small optical components are available, cost-effective and highly accurate optical components can also be used.

[0018] Furthermore, such an exposure device makes it possible to perform exposure with higher accuracy than in the case of laser beam scanning. With such an exposure device, a large-area mask can also be used, and it is possible to increase the irradiation energy density in the area of ​​the substrate to be exposed relative to the irradiation energy of the mask section, thus enabling exposure with a higher energy density.

[0019] It is preferred that the exposure device of the first aspect be configured to operate synchronously in a plane direction that is substantially perpendicular to a direction of irradiation with the laser beam, in order to maintain a relatively corresponding positional relationship between them, and The exposure device for a substrate with printed wiring is configured to cause the mask and the substrate table to operate synchronously during the exposure of the substrate, with one irradiation position of the laser beam being fixed, and to subject the mask and the substrate table to a continuous irradiation while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area in order to perform a pattern exposure on the area of ​​the substrate to be exposed.

[0020] With such an exposure device, it is possible to perform pattern exposure with higher accuracy than in the case of laser beam scanning. Furthermore, a large-area mask can also be used with such an exposure device, and it is possible to increase the irradiation energy density in the area of ​​the substrate to be exposed relative to the irradiation energy of the mask section, thus enabling exposure with a higher energy density.

[0021] It is preferred that the laser beam be an excimer laser.

[0022] The use of the excimer laser enables more precise pattern exposure. Furthermore, since the resist material can efficiently absorb the energy of the excimer laser, satisfactory pattern exposure can be achieved.

[0023] It is preferred that the exposure device further comprises a mask table which holds the mask and causes the mask to move in one pass.

[0024] Furthermore, if the exposure device includes such a mask table, it is possible to efficiently perform a pass-through operation of the mask.

[0025] It is preferred that the exposure device further comprises a third optical functional unit with a reduced projection optical system between the second optical functional unit and the substrate table.

[0026] Furthermore, by including such a third optical functional unit, the mask can be enlarged compared to the actual exposure pattern, and the energy of the laser beam emitted onto the mask can be reduced compared to the exposure energy emitted onto the substrate. Consequently, thermal drift due to the laser beam energy can be suppressed, thus minimizing thermal expansion of the mask and enabling highly accurate exposure even after long exposures. Additionally, the mask can display a larger pattern than the actual exposure pattern and is therefore less affected by small dust particles.

[0027] It is preferred that the third optical functional unit further comprises a coolant for cooling the reduced projection optical system.

[0028] With such an exposure device, it is possible to further suppress thermal drift due to the energy of the laser beam, enabling very accurate exposure even after a long exposure operation.

[0029] It is preferred that the optical shaping system is an optical system comprising several cylindrical lenses and shaping the laser beam from the laser light source into a laser beam with a rectangular irradiation shape and uniform irradiation energy density.

[0030] The exposure device with such an optical system can shape a high-quality laser beam with a rectangular beam profile and extremely uniform energy density.

[0031] It is preferred that the optical shaping system is an optical system comprising several cylindrical lenses and shaping the laser beam from the laser light source into a laser beam that has the rectangular and cylindrical type irradiation shape.

[0032] The exposure device with such an optical system can irradiate the area of ​​the substrate to be exposed with a cylindrical laser beam with a rectangular shape and extremely uniform energy density.

[0033] The second optical functional unit can further shape the irradiation pattern of the laser beam through the mask, whereby the laser beam has passed through the first optical functional unit.

[0034] The second optical functional unit can further shape the irradiation pattern of the laser beam, which is formed into a rectangular shape, for example according to a pattern that corresponds to the area of ​​the substrate to be exposed.

[0035] It is preferred that the exposure device is configured to cause the mask and the substrate table to move in at least one direction in a single pass without pause during the pass-through irradiation, while the mask and the substrate table are irradiated with the pulsed laser beam.

[0036] By performing such a run, the run time can be significantly reduced compared to the step-and-repeat operation, in which the movement and pause are repeated.

[0037] Since the table operation and a pause are not repeated as frequently as with step and repetition, the thermal stress on the table is also suppressed and very accurate positioning can be maintained for a long time.

[0038] It is preferred that the exposure device further comprises: an imaging technique for reading a feature section of the substrate; an imaging tool for reading a feature section of the mask; and an alignment mechanism that aligns relative positions of the substrate and the mask based on position information about the feature section of the substrate and the feature section of the mask.

[0039] By incorporating these imaging means and the alignment mechanism, the exposure device can perform a pattern exposure in which the mask pattern is projected onto the correct position of the substrate surface.

[0040] In this case, it is preferred that the exposure device further comprises a means for correcting an exposure shape of the substrate with respect to the pattern of the mask based on information from the alignment mechanism.

[0041] Such an exposure device enables more accurate pattern exposure on the substrate.

[0042] It is preferred that the mask be installed in a substantially perpendicular direction with respect to a horizontal plane in which the exposure device is installed.

[0043] With this type of exposure device, compared to the conventional type where the mask is installed in a horizontal plane, the effect of mask deflection is suppressed, very precise pattern exposure can be achieved, and dust adhesion to the mask surface is less likely, thus reducing dust-related defects. Furthermore, since it is possible to align a large portion of the long beam path to a horizontal plane, the height of the device can be reduced.

[0044] Furthermore, the present invention provides, as an exposure method of a first aspect, an exposure method for forming an exposure pattern for a printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure method comprises: Providing an exposure device with a first optical functional unit comprising a laser light source and an optical shaping system, a second optical functional unit comprising a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed, and a substrate table holding the substrate; in the first optical functional unit, irradiation of the optical shaping system with the pulsed laser beam from the laser light source to shape an irradiation pattern of the laser beam into a rectangular shape; in the second optical functional unit, irradiating a mask irradiation area with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask; and Irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, where the substrate irradiation area is made smaller than the area of ​​the substrate to be exposed, and During the exposure of the substrate, the mask and the substrate table are subjected to a continuous irradiation, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area to perform a pattern exposure on the area of ​​the substrate to be exposed.

[0045] With such an exposure method, it is possible to precisely expose a microfine pattern across the area of ​​the substrate to be exposed.

[0046] Furthermore, such an exposure method does not require the use of high laser energy, can be configured cost-effectively without the use of an expensive laser light source and expensive optical elements, can suppress the deterioration of accuracy due to thermal drift of the laser beam, and enables very accurate pattern exposure.

[0047] Moreover, such an exposure method allows for high-density irradiation because the substrate irradiation area can be made small for a single shot.

[0048] Furthermore, the present invention provides, as an exposure method of a second aspect, an exposure method for forming an exposure pattern for a printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure method comprises: Allowing the laser beam, which is shaped into a rectangular form, to pass through a mask to irradiate the substrate with the laser beam, in order to make a substrate irradiation area smaller than an area of ​​the substrate to be exposed, and During the exposure of the substrate, a pattern exposure is performed on the area of ​​the substrate to be exposed, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area.

[0049] With such an exposure method, it is possible to precisely expose a microfine pattern across the area of ​​the substrate to be exposed.

[0050] Furthermore, the present invention provides, as an exposure method of a third aspect, an exposure method for forming an exposure pattern for a printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure method comprises: Providing an exposure device with a first optical functional unit comprising a laser light source and an optical shaping system, a second optical functional unit comprising a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed, and a substrate table holding the substrate; in the first optical functional unit, irradiation of the optical shaping system with the pulsed laser beam from the laser light source to shape an irradiation pattern of the laser beam into a rectangular shape; in the second optical functional unit, irradiating a mask irradiation area with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask; and Irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, where the substrate irradiation area is made smaller than the area of ​​the substrate to be exposed, This causes the mask and the substrate table to operate synchronously in a plane direction that is essentially perpendicular to the direction of irradiation with the laser beam, in order to maintain a relatively corresponding positional relationship between them, and During the exposure of the substrate, where the irradiation position of the laser beam is fixed, the mask and the substrate table are made to work synchronously and are subjected to a continuous irradiation in order to perform a pattern exposure on the area of ​​the substrate to be exposed.

[0051] With such an exposure method, it is possible to precisely expose a microfine pattern across the area of ​​the substrate to be exposed.

[0052] Furthermore, such an exposure method does not require the use of high laser energy, can be configured cost-effectively without the use of an expensive laser light source and costly optical elements, can suppress the degradation of accuracy due to thermal drift of the laser beam, and enables very precise pattern exposure. Since small optical components are available, cost-effective and highly accurate optical components can also be used.

[0053] Furthermore, this exposure method allows for pattern exposure with higher accuracy than laser beam scanning. It also enables the use of a large-area mask and allows for increasing the irradiation energy density in the substrate area being exposed relative to the irradiation energy of the mask section, thus enabling pattern exposure at higher energy densities.

[0054] In the exposure method of the first aspect, it is preferred that the mask and the substrate table are arranged to operate synchronously in a plane direction that is essentially perpendicular to the direction of irradiation with the laser beam, in order to maintain a relatively corresponding positional relationship between them, and During the exposure of the substrate, where an irradiation position of the laser beam is fixed, the mask and the substrate table are caused to operate synchronously and are subjected to a continuous irradiation, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area in order to perform a pattern exposure on the area of ​​the substrate to be exposed.

[0055] This type of exposure method allows for pattern exposure with higher accuracy than laser beam scanning. Furthermore, it enables the use of a large-area mask, thus allowing for exposure at higher energy densities.

[0056] It is preferred that an excimer laser be used as the laser beam.

[0057] The use of the excimer laser enables more precise pattern exposure. Furthermore, the resist material can efficiently absorb the energy of the excimer laser, and therefore satisfactory pattern exposure can be achieved.

[0058] In the exposure process of the first aspect or the third aspect, it is preferred that a mask table which holds the mask and causes the mask to move in one pass is further used.

[0059] In this way, the mask throughput operation can be carried out efficiently.

[0060] In the exposure method of the first aspect or the third aspect, it is preferred to use the exposure device which further comprises a third optical functional unit with a reduced projection optical system between the second optical functional unit and the substrate table.

[0061] Using the exposure device, which further includes such a third optical functional unit, the mask can be enlarged compared to the actual exposure pattern, and the energy of the laser beam emitted onto the mask can be reduced compared to the exposure energy emitted onto the substrate. Consequently, thermal drift due to the laser beam energy can be suppressed, and therefore the thermal expansion of the mask can be minimized, enabling highly accurate pattern exposure even after long exposures. Furthermore, the mask can have a larger pattern than the actual exposure pattern and is therefore less affected by small dust particles. This also results in an extended lifespan for the mask.Since the machining energy density applied to the substrate can be increased, it is also possible to perform machining with a greater machining depth and higher aspect ratio.

[0062] In this case, it is preferred to use the third optical functional unit, which further comprises a coolant for cooling the reduced projection optical system.

[0063] The use of such a third optical functional unit enables very accurate pattern exposure even after a long exposure operation.

[0064] In the exposure method of the first aspect or the third aspect, it is preferred to use an optical system with several cylindrical lenses as an optical shaping system to shape the laser beam from the laser light source into a uniform laser beam with the rectangular irradiation shape.

[0065] In this way, it becomes possible to shape a high-quality laser beam with a rectangular beam profile and extremely uniform energy density.

[0066] In the exposure process of the first aspect or the third aspect, the irradiation shape of the laser beam, which has passed through the first optical functional unit, can be further shaped by the mask in the second optical functional unit.

[0067] The second optical functional unit can further shape the irradiation pattern of the laser beam, which is formed into a rectangular shape, for example according to a pattern that corresponds to the area of ​​the substrate to be exposed.

[0068] In the exposure method of the first aspect or the third aspect, it is preferred that during the continuous irradiation in at least one direction, the mask and the substrate table are caused to move in one pass without pause while they are irradiated with the pulsed laser beam.

[0069] By performing such a run, the run time can be significantly reduced compared to the step-and-repeat operation, where the movement and pause are repeated.

[0070] Since the table operation and a pause are not repeated as frequently as with step and repetition, the thermal stress on the table is also suppressed and very accurate positioning can be maintained for a long time.

[0071] In the exposure process of the first aspect or the third aspect, the continuous irradiation can be carried out repeatedly several times for each area of ​​the substrate to be exposed.

[0072] By repeating the pass-through irradiation several times for each area to be exposed in this way, in order to carry out sufficient and reliable exposure at an intended location, high-speed exposure with high accuracy is made possible.

[0073] It is preferred that the exposure procedure of the first aspect or the third aspect further includes: Reading a feature segment of the substrate and a feature segment of the mask; and Alignment of relative positions of the substrate and the mask using an alignment mechanism based on position information about the feature section of the substrate and the feature section of the mask.

[0074] In this way it becomes possible to perform a pattern exposure in which the mask pattern is projected onto the correct position of the substrate surface.

[0075] In this case, it is preferred that the exposure method further includes correcting an exposure shape of the substrate with respect to the pattern of the mask based on the information from the alignment mechanism.

[0076] Such an exposure method enables more accurate pattern exposure on the substrate.

[0077] In the exposure method of the first aspect or the third aspect, it is preferred to use the exposure device in which the mask is installed in a perpendicular direction with reference to a horizontal plane in which the exposure device is installed.

[0078] Compared to the conventional type, where the mask is installed in a horizontal plane, the use of such an exposure device can suppress the effect of mask deflection to achieve very accurate pattern exposure and is less likely to cause dust to adhere to the mask surface, thus reducing dust-related defects. Furthermore, since it is possible to align a large portion of the long beam path to a horizontal plane, the height of the device can be reduced.

[0079] Furthermore, the present invention provides a manufacturing method for a substrate with printed wiring by performing a pattern exposure on a resist film formed on a surface of a substrate by means of an exposure method of the present invention.

[0080] With such a manufacturing process for a printed wiring substrate, it is possible to produce a printed wiring substrate in which a microfine exposure pattern is precisely formed over the area of ​​the substrate to be exposed.

[0081] Furthermore, such a substrate manufacturing process does not require the use of high laser energy, can be carried out cost-effectively without the use of an expensive laser light source and expensive optical elements, can suppress the deterioration of accuracy due to thermal drift of the laser beam, and enables the production of a substrate exposed with a pattern very precisely.

[0082] For example, a wiring pattern can be formed on the surface of the substrate after pattern exposure has been carried out.

[0083] Alternatively, after a wiring pattern has been formed on the surface of the substrate, the resist film can be formed on the surface of the substrate and then the pattern exposure can be carried out.

[0084] Consequently, pattern exposure can be performed before or after a wiring pattern has been formed on the surface of the substrate.

[0085] The substrate can, for example, be a substrate for a semiconductor package.

[0086] The manufacturing process of a substrate of the present invention can be particularly advantageously applied to the manufacture of a semiconductor package. ADVANTAGEOUS EFFECTS OF THE INVENTION

[0087] As described above, according to the exposure device of the present invention, it is possible to precisely carry out the exposure of a microfine pattern over the area of ​​the substrate to be exposed.

[0088] According to the exposure method of the present invention, it is also possible to precisely carry out the exposure of a microfine pattern over the area of ​​the substrate to be exposed.

[0089] Furthermore, according to the manufacturing process for a substrate with printed wiring, it is possible to produce the substrate with printed wiring in which a microfine exposure pattern is precisely formed over the area of ​​the substrate to be exposed. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a schematic sectional view showing an example of a substrate to be subjected to pattern exposure according to the present invention; Fig. Figure 2 is a schematic sectional view showing another example of a substrate to be subjected to pattern exposure according to the present invention; Fig. Figure 3 is a schematic representation showing an example of an exposure device of the present invention; Fig. Figure 4 is a representation showing an example of a relationship between an area of ​​a substrate to be exposed and a substrate irradiation area in the present invention; Fig. Figure 5 is a representation that describes an example of superimposed irradiation in a uniaxial direction; Fig. Figure 6 is a representation that describes an example of superimposed irradiation from the first row to the third row; Fig. Figure 7 is a conceptual representation of the shaping of an irradiation shape of a laser beam in an example of the optical shaping system; Fig. Figure 8 is a schematic flowchart showing an example of a manufacturing process for a substrate with printed wiring of the present invention; Fig. Figure 9 is a schematic top view of an example of a printed wiring substrate that can be produced by an example of the printed wiring substrate manufacturing process of the present invention; and Fig. Figure 10 is a schematic flow chart showing another example of the manufacturing process for a substrate with printed wiring of the present invention. DESCRIPTION OF EXECUTION FORMS

[0090] As described above, there was a need to develop an exposure device capable of accurately exposing a microfine pattern over an area of ​​a substrate to be exposed.

[0091] As a result of intensive investigations into the problems described above, the present inventors have found that in exposure, which forms an exposure pattern for a printed wiring by exposing a resist film formed on the surface of a substrate with irradiation energy from a laser beam, it is possible to expose a microfine pattern over an area of ​​the substrate to be exposed by causing a substrate irradiation area to be irradiated with the laser beam from a shot that is smaller than the area of ​​the substrate to be exposed, by performing a continuous irradiation of a mask and a substrate stage during the exposure operation on the substrate while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area in order to perform a pattern exposure on the area of ​​the substrate to be exposed, and / or by causingthat the mask and the substrate stage operate synchronously, with a fixed irradiation position of the laser beam, and that the mask and the substrate stage are subjected to a continuous irradiation to perform a pattern exposure on the area of ​​the substrate to be exposed. Based on this finding, the present inventors completed the present invention.

[0092] That is, an exposure device of a first aspect of the present invention is an exposure device for a substrate with printed wiring for forming an exposure pattern for printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure device for a substrate with printed wiring comprises: a first optical functional unit comprising a laser light source that performs irradiation with the pulsed laser beam, and an optical shaping system that shapes an irradiation pattern of the laser beam from the laser light source into a rectangular shape; a second optical functional unit with a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed; and a substrate table that holds the substrate, wherein the mask comprises a mask irradiation area to be irradiated with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask, the substrate comprises a substrate irradiation area onto which the pattern is to be projected by the laser beam that has passed through the mask, the substrate irradiation area is smaller than the area of ​​the substrate to be exposed, and The exposure device for a substrate with printed wiring is configured to perform a pass-through irradiation of the mask and substrate table during the exposure of the substrate, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area to perform a pattern exposure on the area of ​​the substrate to be exposed.

[0093] Furthermore, an exposure device of a second aspect of the present invention is an exposure device for a substrate with printed wiring for forming an exposure pattern for printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure device for a substrate with printed wiring comprises: a first optical functional unit comprising a laser light source that performs irradiation with the pulsed laser beam, and an optical shaping system that shapes an irradiation pattern of the laser beam from the laser light source into a rectangular shape; a second optical functional unit with a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed; and a substrate table that holds the substrate, wherein the mask comprises a mask irradiation area to be irradiated with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask, the substrate comprises a substrate irradiation area onto which the pattern is to be projected by the laser beam that has passed through the mask, the substrate irradiation area is smaller than the area of ​​the substrate to be exposed, the mask and the substrate table are configured to operate synchronously in a plane direction that is essentially perpendicular to a direction of irradiation with the laser beam, in order to maintain a relatively corresponding positional relationship between them, and The exposure device for a substrate with printed wiring is configured to ensure that the mask and the substrate table operate synchronously during the exposure of the substrate, and to subject the mask and the substrate table to a continuous irradiation, with an irradiation position of the laser beam being fixed in order to perform a pattern exposure on the area of ​​the substrate to be exposed.

[0094] Furthermore, an exposure method of a first aspect of the present invention is an exposure method for forming an exposure pattern for a printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure method comprises: Providing an exposure device with a first optical functional unit comprising a laser light source and an optical shaping system, a second optical functional unit comprising a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed, and a substrate table holding the substrate; in the first optical functional unit, irradiation of the optical shaping system with the pulsed laser beam from the laser light source to shape an irradiation pattern of the laser beam into a rectangular shape; in the second optical functional unit, irradiating a mask irradiation area with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask; and Irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, where the substrate irradiation area is made smaller than the area of ​​the substrate to be exposed, and During the exposure of the substrate, the mask and the substrate table are subjected to a continuous irradiation, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area to perform a pattern exposure on the area of ​​the substrate to be exposed.

[0095] Furthermore, an exposure method of a second aspect of the present invention is an exposure method for forming an exposure pattern for a printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure method comprises: Allowing the laser beam, which is shaped into a rectangular form, to pass through a mask to irradiate the substrate with the laser beam, in order to make a substrate irradiation area smaller than an area of ​​the substrate to be exposed, and During the exposure of the substrate, a pattern exposure is performed on the area of ​​the substrate to be exposed, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area.

[0096] Furthermore, an exposure method of a third aspect of the present invention is an exposure method for forming an exposure pattern for a printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure method comprises: Providing an exposure device with a first optical functional unit comprising a laser light source and an optical shaping system, a second optical functional unit comprising a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed, and a substrate table holding the substrate; in the first optical functional unit, irradiation of the optical shaping system with the pulsed laser beam from the laser light source to shape an irradiation pattern of the laser beam into a rectangular shape; in the second optical functional unit, irradiating a mask irradiation area with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask; and Irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, where the substrate irradiation area is made smaller than the area of ​​the substrate to be exposed, This causes the mask and the substrate table to operate synchronously in a plane direction that is essentially perpendicular to the direction of irradiation with the laser beam, in order to maintain a relatively corresponding positional relationship between them, and During the exposure of the substrate, where the irradiation position of the laser beam is fixed, the mask and the substrate table are made to work synchronously and are subjected to a continuous irradiation in order to perform a pattern exposure on the area of ​​the substrate to be exposed.

[0097] Furthermore, a manufacturing method for a substrate with printed wiring according to the present invention is a manufacturing method for a substrate with printed wiring comprising performing a pattern exposure on a resist film formed on a surface of a substrate by means of an exposure method according to the present invention.

[0098] The present invention is described in detail below. However, the present invention is not limited to this. [Exposure target]

[0099] First, a substrate that is to be exposed during the exposure process according to the present invention is described. As in Fig. As shown in Figure 1, the substrate to be exposed during exposure according to the present invention is, for example, a substrate (substrate formed with a resist film) 80 with a substrate 80A and a resist film 80B formed on a surface of the substrate 80B.

[0100] The substrate 80A, for example, is a semiconductor substrate. The substrate 80A can be a substrate of an elemental semiconductor or a substrate with a composite semiconductor. The substrate 80A can include a doping material.

[0101] In the present invention, the material of the resist film 80B is not particularly limited. The material of the resist film 80B can be of a negative type or a positive type. Examples include solder resist (photo- or heat-curing type), electroform resist, and circuit formation resist (etch resist (resist for performing pattern etching on a structured electrode material such as copper, and mask resist for forming an electrode material such as copper around a hole), and plating resist).

[0102] A method for forming the resist film 80B can be selected as appropriate according to the resist material. The resist film can be formed, for example, by applying a liquid resist material or by a lamination scheme in which a film-like resist material is laminated onto the substrate 80A.

[0103] The method for curing the resist material depends on the resist material itself. For example, the resist material can be cured by heat curing or photocuring.

[0104] The 80B resist film can be described as an organic film or resin film.

[0105] The aspect of the substrate to be exposed during exposure according to the present invention is not limited to the one described in Fig. 1 shown limited. As in Fig. As shown in Figure 2, the substrate can, for example, comprise a base substrate 80A formed with a wiring pattern 80P, an intermediate insulating film 80I formed on a surface of the base substrate 80A, and the resist film 80B formed on a surface of the intermediate insulating film 80I. The Fig. The wiring pattern shown, 80P, includes through electrodes 80C and internal wires 80D.

[0106] In both aspects, the present invention is an invention that performs a pattern exposure on the resist film 80B, which is formed on the surface of the substrate 80A. It should be noted that in the following description, the exposure target is simply referred to as the substrate 80. However, in the present invention, a pattern exposure is actually performed on the resist film 80B, which is formed on a surface of the substrate 80. [Exposure device]

[0107] Fig. Figure 3 is a schematic representation showing an example of an exposure device of the present invention. An exposure device 100, which is in Fig. Figure 3 shows an exposure device for a substrate with printed wiring for forming an exposure pattern for printed wiring by exposure using irradiation energy of a laser beam on the resist film 80B, which is formed on the surface of the substrate 80.

[0108] The in Fig. 3 Exposure device 100 shown comprises a first optical functional unit 10, a second optical functional unit 20 and a substrate table 40 which holds the substrate 80.

[0109] The first optical functional unit 10 is equipped with a laser light source (laser oscillator) 11, which irradiates (emits) a pulsed laser beam 1, and an optical shaping system 12, which is irradiated with the laser beam 1 from the laser light source 11. The optical shaping system 12 shapes the irradiation pattern of the laser beam 1, which, for example, Fig. 3(a) shows the rectangular irradiation pattern, which is shown, for example, in Fig. 3(b) is shown. A laser beam 2 with the rectangular irradiation shape can exhibit a uniform irradiation energy density and has a beam profile that, for example, shows a cylindrical shape.

[0110] The second optical functional unit 20 is provided with a mask 21. The mask 21 contains an effective area 22 with a pattern that corresponds to an area of ​​the substrate 80 to be exposed.

[0111] The mask 21 comprises a mask irradiation area that is to be irradiated with the laser beam 2, which has passed through the first optical functional unit 10. The mask irradiation area is part of the effective area 22 of the mask 21.

[0112] A laser beam 3 that has passed through the second optical functional unit 20 and exhibits the irradiation pattern that, for example, in Fig. 3(c) is shown, in its direction of progress, as in Fig. 3(d) is shown, modified by an optical reflection mirror 50, and enters the optional third optical functional unit 30 (described later). The in Fig. The exposure device 100 shown is configured to cause a laser beam 4, emitted from the third optical functional unit 30, to irradiate a part of the substrate 80, which is held on the substrate table 40.

[0113] The substrate 80 comprises a substrate irradiation area onto which a pattern is projected by the laser beam that has passed through the mask 21 (and the optional third optical functional unit 30).

[0114] Fig. Figure 4 shows an example of the relationship between a substrate irradiation area 90, which is to be irradiated with the laser beam 4, of the substrate 80 and an area 81 of the substrate 80 to be exposed. As in Fig. As shown in Figure 4, the substrate irradiation area 90 is smaller than the area 81 of the substrate 80 to be exposed.

[0115] The in Fig. The substrate irradiation area 90 shown is an area irradiated by a single pulse of the pulsed laser beam 4. Since the pattern is projected onto the substrate irradiation area 90 by the laser beam that has passed through the mask 21, the substrate irradiation area 90 also corresponds to the mask irradiation area, which is part of the effective area 22 of the mask 21.

[0116] In the example of Fig. 3. Mask 21 has a configuration that allows scanning (movement with traversal; traversal) along traversal axes 21X and 21Y, which are in Fig. Figure 3 shows how this is possible. Furthermore, the substrate stage 40 has a configuration that enables scanning along the 80X and 80Y axes, which are shown in Fig. 3 are shown, enabling.

[0117] Furthermore, the exposure device 100 of the present invention is configured to perform a pass-through irradiation of the mask 21 and the substrate table 40 with the laser beam 4 in order to carry out a pattern exposure on the area 81 of the substrate 80 to be exposed.

[0118] Moreover, the exposure device 100 of the present invention is configured, as described in detail below, to perform superimposed irradiation (according to the first aspect) and / or synchronous continuous irradiation, wherein an irradiation position of the laser beam is fixed (according to the second aspect). [First aspect]

[0119] The exposure device 100 of the first aspect is configured to perform a continuous irradiation of the mask 20 and the substrate table 80 during the exposure of the substrate 80, while one section of the substrate irradiation area 90 is superimposed onto another section of the substrate irradiation area 90 in order to perform a pattern exposure on the area 81 of the substrate 80 to be exposed. Performing irradiation with the laser beam while one section of the substrate irradiation area 90 is superimposed onto another section of the substrate irradiation area 90 is referred to below as superimposed irradiation.

[0120] Next, an example of superimposed radiation will be given with reference to Fig. 5 and Fig. 6 described.

[0121] Fig. Figure 5(a) shows the substrate irradiation area 90 on the substrate 80 to be irradiated with a pulsed single shot of the laser beam. In the superimposed irradiation of this example, the mask 20 and the substrate stage 80 are caused to move in one cycle and be irradiated with the laser beam, so that, as in Fig. Figure 5(b) shows that a section of a substrate irradiation area 91, which is subjected to the first shot, is superimposed onto a section of a substrate irradiation area 92, which is subjected to the second shot, in the direction of the arrow along the transmission axis 80X. Subsequently, the irradiation with the laser beam is carried out such that a section of a substrate irradiation area 93, which is subjected to the third shot, is partially superimposed onto a section of the substrate irradiation area 91 of the first shot and onto a section of the substrate irradiation area 92 of the second shot. By repeating such superimposed irradiation of the fourth shot and subsequently, the exposure area is extended along the transmission axis 80X.

[0122] Fig. 6(a) shows a process for performing a pattern exposure on the first row of the area 81 to be exposed along the transmission axis 80X by the superimposed irradiation, which is in Fig. 5(b) is shown. As in Fig. As shown in 6(b), the superimposed irradiation is next carried out along the 80X transit axis to target a section of the areas exposed to the superimposed irradiation in Fig. 6(a) were subjected to superimposition in the direction of the transit axis 80Y (orthogonal to the transit axis 80X) in order to perform a pattern exposure on the second row of the area 81 to be exposed along the transit axis 80X. As in Fig. As shown in 6(c), the superimposed irradiation is next carried out along the traversal axis 80X to target a section of each of the areas that receive the superimposed irradiation in Fig. 6(a) and (b) were subjected to superimposed irradiation in the direction of the transit axis 80Y to perform a pattern exposure on the third row of the area 81 to be exposed along the transit axis 80X. By repeating such superimposed irradiation on the fourth and subsequent rows of the area 81 to be exposed, the exposure area is extended beyond the area 81 to be exposed. Consequently, the superimposed irradiation can be performed at regular intervals in each of the two directions of the transit axes 80X and 80Y.

[0123] The superimposed sections of the substrate irradiation area are subjected to laser beam irradiation several times. Consequently, the sections undergo sufficient pattern exposure according to the pattern shape of the mask, and it is possible to reliably achieve a pattern exposure according to the pattern shape of the mask required in the area to be exposed 81.

[0124] In such an exposure device 100 of the first aspect, the pulsed rectangular laser beam with uniform irradiation energy density is converted by the mask 21 into the laser beam 4 with the exposure shape, and the substrate irradiation area 90 of the substrate 80 is irradiated with the laser beam 4. Therefore, several irradiations with a uniform exposure depth of the substrate irradiation area 90 in the substrate 80 can be carried out, which corresponds to the mask irradiation area, which is part of the effective area 22 of the mask 21. With the exposure device 100, it is therefore possible to precisely perform the exposure of a microfine pattern over the area 81 of the substrate 80 to be exposed.

[0125] Furthermore, such an exposure device 100 does not require the use of high laser energy, can be configured cost-effectively without the use of an expensive laser light source and expensive optical elements, can suppress the deterioration of accuracy due to thermal drift of the laser beam, and can perform very accurate pattern exposure.

[0126] Furthermore, the exposure device 100 can irradiate the substrate with the pulsed laser beam 4 and can therefore perform the superimposed irradiation described above at high speed.

[0127] That is, according to the exposure device 100 of the first aspect of the present invention, it is possible to carry out a very accurate pattern exposure at high speed.

[0128] Furthermore, according to the exposure device 100 of the first aspect of the present invention, superimposed irradiation is carried out, and consequently the substrate irradiation area for a single shot can be made small. This makes high-density irradiation possible. [Second aspect]

[0129] In the exposure device 100 of the second aspect, the mask 21 and the substrate table 40 are configured to operate synchronously in a plane direction that is essentially perpendicular to a direction of emission of the laser beams 2 and 4 in order to maintain a relatively corresponding positional relationship between them.

[0130] In the example of Fig. 3. The mask 21 and the substrate table 40 are configured to synchronize the operation of the mask 21 along the through-axis 21X with the operation of the substrate table 80 along the through-axis 80X, to synchronize the operation of the mask 21 along the through-axis 21Y with the operation of the substrate table 80 along the through-axis 80Y, and thereby maintain a relatively corresponding positional relationship between the mask 21 and the substrate table 40.

[0131] Furthermore, the exposure device 100 of the second aspect is configured to ensure that, during the exposure operation on the substrate 80, the mask 21 and the substrate stage 40 operate synchronously, and to subject the mask 21 and the substrate stage 40 to a continuous irradiation, wherein an irradiation position of the laser beam 4 is fixed, in order to perform a pattern exposure on the area 81 of the substrate 80 to be exposed. Such a continuous irradiation, which can be performed by the exposure device 100 of the second aspect, is hereinafter referred to as "synchronous continuous irradiation, wherein the irradiation position of the laser beam is fixed".

[0132] With such synchronous continuous irradiation, it is possible to perform pattern exposure with higher accuracy than in the case of scanning with (movement) the laser beam. Furthermore, with such an exposure device 100, a large-area mask can also be used as mask 21, and the pattern exposure can also be performed with higher energy density by combining the large-area mask with the third optical functional unit 30 described later.

[0133] Furthermore, in such an exposure device 100 of the second aspect, similar to the exposure device 100 of the first aspect, the pulsed rectangular laser beam with uniform irradiation energy density is converted by the mask 21 into the laser beam 4 with an exposure shape, and the substrate irradiation area 90 of the substrate 80 is irradiated with the laser beam 4. Therefore, in the exposure device 100 of the second aspect, similar to the first aspect, multiple irradiations with a uniform exposure depth of the substrate irradiation area 90 in the substrate 80, which corresponds to the mask irradiation area that is part of the effective area 22 of the mask 21, can be carried out. Consequently, it is also possible with the exposure device 100 to precisely perform the exposure of a microfine pattern over the area 81 of the substrate 80 to be exposed.

[0134] Furthermore, such an exposure device 100 does not require the use of high laser energy, can be configured cost-effectively without the use of an expensive laser light source and expensive optical elements, can suppress the degradation of accuracy due to thermal drift of the laser beam, and can perform very precise pattern exposure. Since small components are available for optical elements, cost-effective and very precise optical components can also be used.

[0135] It should be noted that it is preferred that the exposure device 100 of the first aspect is configured to perform, in addition to the superimposed irradiation described above, a synchronous pass-through irradiation, wherein the irradiation position of the laser beam is fixed, similar to the second aspect.

[0136] The following are optional matters for each component of the exposure device 100 of the present invention. [First optical functional unit 10]

[0137] It is preferred that the laser beam 1 emitted by the laser light source 11 is an excimer laser.

[0138] The excimer laser has a shorter wavelength than a conventional solid-state laser, such as a diode-pumped solid-state laser (DPSS laser), and consequently offers higher resolution. Therefore, using the excimer laser enables more precise pattern exposure. Furthermore, epoxy-based substrate materials, for example, exhibit extremely high absorption for the excimer laser, and the excimer laser performs well on these materials. Additionally, the excimer laser has low coherence and is less likely to produce interference fringes, thus generating a highly uniform beam pattern with a flat top surface. Consequently, the ablation depth can be made uniform.

[0139] It is preferred that the optical shaping system 12 is an optical system comprising several cylindrical lenses and shaping the laser beam 1 from the laser light source 11 into a laser beam having a rectangular irradiation shape and uniform irradiation energy density, in particular a cylindrical laser beam.

[0140] Fig. Figure 7 shows a conceptual representation of the shaping of the irradiation shape of a laser beam in an optical shaping system equipped with several cylindrical lenses.

[0141] The optical shaping system 12, which is in Fig. Figure 7 shows a system equipped with several cylindrical lenses, formed by an X1 cylindrical lens 13, a Y1 cylindrical lens 14, an X2 cylindrical lens 15, and a Y2 cylindrical lens 16, and a converging lens 17. The X1 cylindrical lens 13 and the X2 cylindrical lens 15 are arranged at a distance of twice a focal length f1, as shown in a lower part of the figure. Fig. Figure 7 shows the Y1 cylindrical lens 14 and the Y2 cylindrical lens 16, which are also arranged at a distance of twice the focal length from it.

[0142] The laser beam 1, which passes through the laser light source 11, which is in Fig. As shown in Figure 3, the oscillation pattern exhibits an uneven irradiation shape (beam profile), as shown in Figure 3. Fig. Figure 7 shows that as soon as the laser beam 1 enters the optical shaping system 12 with such an irradiation pattern, each component of the laser beam 1 is shaped according to positions in an X-direction and a Y-direction thereof. The lower part of Fig. Figure 7 schematically shows how the component denoted by "2" is shaped, for example, by the cylindrical lenses 14 and 16. Each component of the laser beam 1 is shaped by the cylindrical lenses 13 to 16 and collected at a position spaced a focal length f2 away from the converging lens 17. By collecting each component, the laser beam 2 is formed with a cylindrical beam shape, as shown in Fig. 7 shown, formed and output from the optical shaping system 12 as the output beam.

[0143] By recombining the configuration of the cylindrical lenses in the X-direction and the Y-direction, it is possible to shape the beam into a square, a rectangle, or the like.

[0144] By shaping the irradiation shape of the laser beam 1 using several such cylindrical lenses 13 to 16, it is possible to shape the laser beam 2 with high quality, which has a rectangular shape and extremely uniform energy density, in particular a beam profile of the cylindrical type.

[0145] In particular, in the exposure device 100 of the first aspect, by carrying out the superimposed irradiation using such a rectangular beam profile, dead zones, which are not irradiated areas, are not created and an averaged pattern exposure can be carried out within the tolerance range of the desired pattern exposure, which enables extremely efficient pattern exposure on the substrate 80. [Second optical functional unit 20]

[0146] It is preferred that the second optical functional unit 20 further comprises a mask table which holds the mask 21 and causes the mask 21 to move in one pass.

[0147] By attaching a pass-through shaft to the mask table on which the mask 21 is held, a pass-through operation of the mask can be carried out efficiently.

[0148] Furthermore, by adding a correction function (inclination axis, θ-axis) to the mask table, it is possible to easily perform a correction with reference to the surface shape of the substrate 80 to be exposed with a pattern, which enables correct pattern exposure.

[0149] The second optical functional unit 20 can be configured to further shape the irradiation pattern of the laser beam 2 through the mask 21, where the laser beam 2 has passed through the first optical functional unit 10.

[0150] The second optical functional unit 20 can further shape the irradiation pattern of the laser beam 2, which is shaped into a rectangular form, for example according to a pattern that corresponds to the area 81 of the substrate 80 to be exposed.

[0151] It is preferred that the mask 21 be installed in a substantially perpendicular direction with respect to a horizontal plane in which the exposure device 100 is installed.

[0152] As described above, a large size is required for substrate processing, and consequently, masks become larger. Furthermore, the mask size becomes even larger when a reduced projection optical system is used.

[0153] On the other hand, the required degree of precision of an exposure pattern on substrates increases, and any distortion in the image of the mask affects the accuracy of the processing.

[0154] If the mask is installed in the same horizontal direction as the horizontal plane in which the device is installed, the mask alone creates distortion due to gravity, thus degrading exposure accuracy. Furthermore, increasing the mask's thickness to reduce this distortion makes the mask extremely heavy, causing difficulties when replacing it.

[0155] In a case where a support is provided under the mask to suppress the generation of deflection, although the support must be optically transparent, the thickness of the support element must increase for a larger mask, which causes a problem of cost and additionally worsens the energy efficiency of the laser irradiation due to the increased absorption of the laser energy in the support material.

[0156] Furthermore, if the mask is installed horizontally, the risk of dust accumulating on the mask increases. If production continues while dust remains on the mask, quality defects will occur in a large quantity of products.

[0157] In cases where dust enters the space between the support material under the mask and the mask itself, the dust not only damages the products and the mask, but also creates an optical inconsistency. This is because the small gap created between the support material and the mask has a different refractive index. Consequently, the laser beam is irradiated in a non-uniform manner.

[0158] Since the optical path length from the laser light source to the substrate is long, the height of the device also increases when the mask is brought into a horizontal position. The height of the device can be reduced by tilting the mask upwards.

[0159] By installing the mask 21 in a substantially perpendicular direction with respect to the horizontal plane in which the exposure device 100 is installed, as in this preferred example, the mask 21 does not deflect and does not require support to prevent deflection by means of an optically transparent material, which makes it possible to carry out a very accurate, extremely uniform pattern exposure with high utilization efficiency of the laser energy.

[0160] It should be noted that in the exposure device 100 of the present invention, the irradiation area of ​​the laser beam 3, which has passed through the mask 21, can be reduced by the optional reduced optical system 31, which will be described later, in order to increase the energy density of the laser beam 4 that is to be emitted onto the substrate. Therefore, even if the large-area mask 21 is enlarged, the desired exposure of a microfine pattern can be achieved by the combined use of the reduced optical system 31, which is adapted to the enlarged mask 21.

[0161] The size of the mask 21 is not particularly limited. In the present invention, for example, the mask 21 can be used which has dimensions of 700 mm or more (for example, 700 mm x 800 mm) in longitudinal and lateral directions that are orthogonal to the thickness direction, and in which the dimensions of the effective area 22 in longitudinal and lateral directions that are orthogonal to the thickness direction are 500 mm or more (for example, 600 mm x 600 mm). [Third optical functional unit 30]

[0162] As in the Fig. In the exposure device 100 shown in Figure 3, it is preferred that the exposure device further comprises the third optical functional unit with the reduced projection optical system 31 between the second optical functional unit 20 and the substrate table 40.

[0163] In recent years, substrate exposure patterns have become increasingly microfine, with growing demands for minimum exposure pattern widths of a few micrometers. The process is also affected by microfine dust, and in particular, microfine dust adhering to the mask section causes a significant number of exposure defects. Therefore, by enlarging the mask 21 compared to the actual exposure and subjecting the laser beam 3, which has passed through the mask 21, to a reduced projection exposure in the reduced projection optical system 31 of the subsequent stage, the effects of the microfine dust can be minimized.

[0164] Furthermore, by enlarging the mask 21 compared to the actual exposure pattern, the energy of the laser beam 2 emitted onto the mask 21 can be made smaller than the exposure energy. If the reduction magnification of the reduced projection optical system 31 is N, the energy of the laser beam striking the mask surface is 1 / (N 2 ) compared to the exposure energy on the surface of the substrate 80. Consequently, thermal drift due to the energy of the laser beam 2 can be suppressed and therefore the thermal expansion of the mask 21 can be suppressed, which enables very accurate pattern exposure even after a long exposure operation.

[0165] Since the deterioration of optical elements (for example, the optical shaping system 12 and the mask 21) due to the heat of the laser beam can be suppressed, the lifetime of the optical elements can also be extended.

[0166] In the exposure device 100 described above, which is configured to perform synchronous continuous irradiation with a fixed laser beam irradiation position, it is also possible to use a reduction projection lens with an extremely small aperture compared to methods where the laser beam irradiation position is moved. In addition to being cost-effective, this results in less lens distortion and a reduction in lens aberration, thereby significantly increasing the substrate exposure accuracy.

[0167] The reduced projection optical system 31 can be equipped with a pair of reduction projection lenses. In a case where the reduced projection optical system 31 is an infinity optical system, the magnification can be adjusted by the reduced projection optical system 31, for example by the ratio of the focal lengths of the reduction projection lenses and the distance between the reduction projection lenses.

[0168] It is preferred that the reduction projection lens has a high NA (numerical aperture). Using a reduction projection lens with a high NA makes it possible to create an exposure pattern that is closer to a cylindrical shape. In the exposure device of the present invention, projection exposure can be carried out, and consequently, a reduction projection lens with a high NA can be used.

[0169] It is preferred that the NA of the reduction projection lens be selected according to the energy density required for pattern exposure on substrate 80. It is preferred that the NA of the reduction projection lens be 0.12 or more.

[0170] It is preferred that the third optical functional unit 30 is further equipped with a coolant for cooling the reduced projection optical system 31.

[0171] By absorbing the coolant, it is also possible to suppress the effect of heat from the laser beam energy in the reduced projection optical system 30. Since in the reduced projection optical system 30 the laser beam 3, which has passed through the mask 21, is subjected to the reduction projection of 1 / N, the energy of the laser beam passing through the lens section of the objective tip is N 2This section is several times larger than the energy of the laser beam emitted onto the mask 21, and it is more likely to be affected by heat. By providing a cooling function for the reduced projection optical system 30 to suppress this heat energy, the thermal drift due to the laser beam energy can therefore be suppressed, enabling very accurate pattern exposure even after a long exposure operation.

[0172] In the exposure device 100 described above, which is configured to perform synchronous continuous irradiation with a fixed laser beam irradiation position, it is also possible to use a reduction projection lens with an extremely small aperture. Regarding the coolant for the reduction projection lens, the coolant cannot be applied directly to the lens itself; instead, cooling is provided for a section of the casing that holds the lens. Therefore, as the lens aperture increases, the temperature can be managed in the area surrounding the lens, but near the central section, which is the critical area, the cooling effect is difficult to propagate, and heat management becomes challenging. Consequently, even a small amount of energy absorption into the lens due to long-term laser beam irradiation easily causes thermal distortion.With the third optical functional unit 30 with the cooling function, the lens aperture can be made small, and therefore such a problem can be suppressed.

[0173] Furthermore, defects caused by laser beam irradiation of the reduced projection optical system 31 can be suppressed, thereby extending its service life. [Transmission mechanism]

[0174] It is preferred that the exposure device 100 is configured to cause the mask 21 and the substrate table 40 to move in at least one direction in a single pass without pause during the continuous irradiation, while the mask 21 and the substrate table 40 are irradiated with the pulsed laser beams 2 and 4, respectively.

[0175] By performing continuous irradiation without a pause, the cycle time can be significantly reduced compared to the step-and-repeat procedure, in which the movement and pause are repeated. In particular, since the repositioning required when transitioning from a moving state to a pause is eliminated, it is possible to prevent a deterioration in positional accuracy due to acceleration / deceleration.

[0176] Since such an operation is performed frequently, the stress on the drive shaft and motor becomes high when movement and pause are repeated. By performing the continuous irradiation operation without a pause, the stress on the shaft can be reduced and heat generation in the drive shaft section can be suppressed, which further prevents the deterioration of positional accuracy due to thermal drift and enables extremely high-precision substrate pattern exposure. [Imaging device and alignment mechanism]

[0177] It is preferred that the exposure device 100 of the present invention further comprises an imaging means for reading a feature section of the substrate 80, an imaging means for reading a feature section of the mask 21 and an alignment mechanism that aligns relative positions of the substrate and the mask based on position information about the feature section of the substrate and the feature section of the mask.

[0178] The in Fig. The exposure device 100 shown in Figure 3 comprises an alignment camera 23 for the mask as an imaging means for reading the feature section of the mask 21, an alignment camera 60 for the substrate as an imaging means for reading the feature section of the substrate 80, and the alignment mechanism (not shown). The alignment camera 23 for the mask is configured to send position information about the feature section of the mask 21 to the alignment mechanism. The alignment camera 60 for the substrate is configured to send position information about the feature section of the substrate 80 to the alignment mechanism. The alignment mechanism is configured to align the relative positions of the substrate 80 and the mask 21 based on this portion of position information.

[0179] By aligning the position of the mask 21 with the position of the substrate 80 using the imaging medium, it is possible to perform the pattern exposure, in which the mask pattern is to be projected onto the correct position of the surface of the substrate 80.

[0180] In particular, substrates are often processed over multiple layers, and if the exposure positions of the respective layers do not correspond precisely to the intended positions for processing, quality defects such as separation between layer circuits and high contact resistance occur, even when the layers are connected. Accurate exposure positioning is essential to suppress these quality defects.

[0181] In this case, it is preferred that a means for correcting an exposure shape of the substrate 80 with respect to the pattern of the mask 21 based on information from the alignment mechanism is further included.

[0182] The shape of the projected image of the pattern of mask 21 is not always a correct, similar shape with respect to the exposure shape on substrate 80, and the magnification is not always the same due to the effect of thermal expansion or the like. Furthermore, in some cases, due to a slight distortion or deformation of substrate 80, the exposure shape on substrate 80 must be deformed with respect to the projected image of mask 21.

[0183] As described above, the position of the mask 21 and the position of the substrate 80 are therefore detected by the imaging means (the alignment camera 23 for the mask and the alignment camera 60 for the substrate) and based on information from this, the projected image of the mask 21 is aligned to the shape on the substrate to be exposed, thus enabling correct pattern exposure on the substrate.

[0184] In particular, the projection position of the projected image of the mask 21 is detected by a beam image detection camera 70 and corrected based on the information about this projection position in order to optimize the projection magnification by the third optical functional unit 30, and the throughput speed during the irradiation is optimized based on the information described above. Consequently, it is possible to optionally change the longitudinal and lateral magnifications of the substrate 80 relative to the image of the mask 21 within a certain range and to apply an optimal exposure mode to the resist film of the substrate. [Exposure process]

[0185] The exposure method of the first aspect of the present invention is a method for carrying out the previously described superimposed irradiation using the exposure device 100 of the first aspect described above. Therefore, according to the exposure method of the first aspect of the present invention, it is possible to precisely expose a microfine pattern over the area of ​​the substrate to be exposed. Furthermore, irradiation with high energy density can be carried out, and sufficient pattern exposure can be performed at high speed.

[0186] The exposure method of the present invention is not limited to the method using the exposure device 100 of the first aspect described above.

[0187] An exposure method of a second aspect of the present invention is, for example, an exposure method for forming an exposure pattern for a printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, allowing the laser beam, which is shaped into a rectangular form, to pass through a mask to irradiate the substrate with the laser beam in order to make a substrate irradiation area smaller than the area of ​​the substrate to be exposed, and performing a pattern exposure on the area of ​​the substrate to be exposed during the exposure of the substrate, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area.

[0188] With such an exposure method, since the substrate is irradiated with the laser beam, so that the substrate irradiation area is smaller than the area of ​​the substrate to be exposed, and a pattern exposure is carried out on the area of ​​the substrate to be exposed, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area, in other words, superimposed irradiation is carried out, it is possible to accurately perform an exposure of a microfine pattern over the area of ​​the substrate to be exposed.

[0189] It should be noted that with the exposure method of the second aspect of the present invention, the use of the excimer laser enables more precise pattern exposure.

[0190] Alternatively, the exposure method of the third aspect of the present invention is a method for carrying out the synchronous sweep irradiation described above, wherein the irradiation position of the laser beam is fixed, using the exposure device 100 of the second aspect described above. Therefore, according to the exposure method of the third aspect of the present invention, the exposure of a microfine pattern over the area of ​​the substrate to be exposed can be carried out precisely. Furthermore, according to the exposure method of the third aspect, the pattern exposure can be carried out with higher accuracy than in the case of moving (scanning with) a laser beam.Furthermore, a large-area mask can also be used as mask 21 with such an exposure method, and the pattern exposure can also be carried out with higher energy density by the combined use of the large-area mask with the previously described third optical functional unit 30.

[0191] It is particularly preferred to perform both the superimposed irradiation described above and the synchronous pass-through irradiation described above during the exposure operation on the substrate, wherein the irradiation position of the laser beam is fixed.

[0192] In the exposure method of the first aspect or the third aspect of the present invention, it is preferred to use the exposure device 100 which fulfills one or more of the previously described optional matters.

[0193] In the exposure method of the first aspect or the third aspect of the present invention, it is further preferred that, during the continuous irradiation in at least one direction, the mask 21 and the substrate table 40 are moved in one pass without a break, while the mask 21 and the substrate table 40 are irradiated with the pulsed laser beam 2 or 4.

[0194] For the reason described above, performing such a run can significantly reduce the run time compared to the step-and-repeat operation, in which the movement and pause are repeated.

[0195] Furthermore, in the exposure method of the first aspect or the third aspect of the present invention, it is preferred to repeat the continuous irradiation several times for each area 81 of the substrate 80 to be exposed.

[0196] The depth exposed by one pass (1 cycle) is limited, and in particular, with the exposure described above, the irradiation cannot be carried out several times on one exposure section without a break.

[0197] By performing laser pulse irradiation while a movement with pass-through (pass-through) is carried out, and repeating the irradiation several times for each area 81 of the substrate 80 to be exposed, the exposure to the desired depth can therefore be carried out sufficiently and sufficient pattern exposure at high speed can be carried out.

[0198] It should be noted that between iteration operations (first iteration, second iteration, ...), as with reference to Fig. 5 and Fig. As described in section 6, the irradiation is carried out, for example, by shifting the substrate irradiation area 90 each time, in order to average the exposure depth and to enable exposure of a uniform depth.

[0199] It is preferred that the exposure method of the first aspect or the third aspect further comprises reading a feature section of the substrate 80 and a feature section of the mask 21 and aligning relative positions of the substrate 80 and the mask 21 using the alignment mechanism based on position information about the feature section of the substrate 80 and the feature section of the mask 21.

[0200] The feature section of substrate 80 can be read, for example, by the substrate alignment camera 60. The feature section of mask 21 can be read, for example, using the mask alignment camera 23.

[0201] By aligning the position of the mask 21 and the position of the substrate 80 by the alignment mechanism on the basis of the information obtained by the alignment cameras 23 and 60 described above, it becomes possible to perform a pattern exposure in which the mask pattern is projected onto the correct position of the surface of the substrate 80.

[0202] In this case, it is preferred that the exposure method further comprises correcting an exposure shape on the substrate 80 with reference to the pattern of the mask 21 based on information from the alignment mechanism.

[0203] Such an exposure method enables more accurate pattern exposure on the substrate. This correction can be achieved, for example, by combining the third optical functional unit 30, the beam image detection camera 70, the pass-through mechanism for the mask 21, the pass-through mechanism for the substrate stage 80, and the like. [Manufacturing process for a substrate with printed wiring]

[0204] In the manufacturing process for a substrate with printed wiring of the present invention, the pattern exposure on the resist film formed on the surface of the substrate is carried out by an exposure process of the present invention.

[0205] With such a manufacturing process for a printed wiring substrate, it is possible to produce a printed wiring substrate in which a microfine exposure pattern is precisely formed over the area of ​​the substrate to be exposed.

[0206] Furthermore, such a manufacturing process for a substrate with printed wiring does not require the use of high laser energy, can be carried out cost-effectively without the use of an expensive laser light source and expensive optical elements, can suppress the deterioration of accuracy due to thermal drift of the laser beam, and enables the production of a substrate exposed with a pattern with very high accuracy.

[0207] In particular, the manufacturing process for a substrate with printed wiring, in which the exposure process of the first aspect described above is carried out, allows the substrate irradiation area to be made small for a single shot, thus enabling high-density irradiation.

[0208] With the manufacturing process for a substrate with printed wiring, in which the exposure method of the third aspect described above is carried out, pattern exposure can be performed with higher accuracy than in the case of laser beam scanning, since the synchronous pass-through irradiation described above, in which the irradiation position of the laser beam is fixed, is carried out on the substrate during the exposure operation. Furthermore, such an exposure method allows the use of a large-area mask, and therefore pattern exposure can also be performed with a higher energy density.

[0209] The manufacturing process for a substrate with printed wiring of the present invention can be particularly advantageously applied to the manufacture of a semiconductor package.

[0210] Examples of the manufacturing process for a substrate with printed wiring according to the present invention are described below with reference to the drawings. However, the manufacturing process for a substrate with printed wiring according to the present invention is not limited to the examples described below. [First example: Example in which the wiring pattern is formed on the surface of the substrate after the pattern exposure has been carried out]

[0211] Fig. Figure 8 shows a schematic flow chart of a method for producing a first example of a substrate with printed wiring of the present invention.

[0212] As in Fig. As shown in Figure 8 (A), the substrate 80 is first provided with the base substrate 80A and the resist film 80B, which is formed on the surface of the base substrate 80A.

[0213] Subsequently, a pattern exposure is carried out on the resist film 80B using the exposure method of the present invention. Consequently, an exposure pattern 80p, consisting of exposed parts 80b, is formed in the resist film 80B.

[0214] Subsequently, development is carried out on the 80B resist film to remove the 80p exposure pattern, thereby forming 80H apertures that correspond to the 80p exposure pattern, as shown in Fig. 8 (C) shown.

[0215] The resist film 80B with the openings 80H is then used as a mask to process the substrate 80A. Processing can be etching (dry or wet) or laser processing. As shown in Fig. As shown in Figure 8 (D), recesses (grooves or trenches) 80d and / or through holes 80C can therefore be formed in the substrate 80A.

[0216] As in Fig. As shown in Figure 8(E), the through-hole electrodes 80C can then be formed in the through-holes 80c and the internal wires 80D can be formed in the recesses 80d. The wiring pattern 80P, consisting of the through-hole electrodes 80C and the internal wires 80D, is thus formed, for example.

[0217] That is, this example is an example in which the wiring pattern 80P is formed on the surface of the substrate 80 after the pattern exposure has been carried out.

[0218] Once the 80P wiring pattern is formed, as shown in Fig. As shown in Figure 8(F), for example, the intermediate insulating film 80I can be formed on the surface of the substrate 80. Furthermore, only corresponding parts of the intermediate insulating film 80I can be removed by structuring to form electrodes 80E at the end sections of the through-electrodes 80C, as shown in Figure 8(F). Fig. Figure 8(F) shows that while a short circuit due to conduction between the internal wires 80D and the outside can be prevented, an electrical connection between the through-electrodes 80C and the outside can be achieved. Consequently, a substrate 80F with printed wiring using the wiring pattern 80P can be produced.

[0219] Fig. Figure 9 shows an example of the 80F substrate with printed wiring, which can be produced by the manufacturing process for a substrate with printed wiring of the present invention.

[0220] The substrate 80F with printed wiring comprises the wiring pattern 80P of the through-electrodes 80C and the internal wires 80D. The internal wires 80D are covered by the interlayer insulating film 80I and are not exposed. However, the electrodes E formed on the through-electrodes 80C are exposed. Each of the solid black sections is an insertion hole for a conductive connection from the outside.

[0221] According to the manufacturing process for a substrate with printed wiring of the present invention, a microfine exposure pattern can be accurately formed as described above, and consequently the microfine wiring pattern 80P can be accurately formed based on such a microfine exposure pattern. As described in Fig. As shown in Figure 9, several internal wires 80D can therefore be formed between adjacent through-electrodes 80C. [Second example: Example in which, after the wiring pattern is formed on the surface of the substrate, the resist film is formed on the surface of the substrate and then a pattern exposure is performed]

[0222] Fig. Figure 10 shows a schematic flow chart of a method for producing a second example of a substrate with printed wiring of the present invention.

[0223] In this example, the through holes 80c and the recesses 80d are first formed in the substrate 80A, as shown in Fig. Figure 10(A) shows the through holes 80c and the recesses 80d, for example, which can be formed by laser processing. According to a processing method that applies the concept of superimposed irradiation according to the present invention to laser processing, it is possible, for example, to perform trench or contact hole processing with an optional depth.

[0224] As in Fig. As shown in Figure 10(B), the through-hole electrodes 80C are then formed in the through-holes 80c and the internal wires 80D are formed in the recesses 80d. Consequently, the wiring pattern 80P, consisting of the through-hole electrodes 80C and the internal wires 80D, is formed.

[0225] As in Fig. As shown in Figure 10 (C), the intermediate layer insulation film 80I and the resist film 80B are subsequently formed sequentially on the surface of the substrate 80A, where the wiring pattern 80P is formed.

[0226] Subsequently, a sample exposure is carried out using the exposure method of the present invention, such that the exposure is only performed on parts of the resist film 80B that correspond to the through-electrodes 80C. As in Fig. As shown in Figure 10 (D), an exposure pattern 80b, consisting of exposed parts 80p, is formed in the resist film 80B.

[0227] Development is performed on resist film 80B to remove the exposure pattern 80b, thereby forming openings corresponding to the exposure pattern 80b. That is, in this example, after the wiring pattern 80P is formed on the surface of substrate 80, resist film 80B is formed on the surface of substrate 80, and then a pattern exposure is performed.

[0228] Through the openings in the resist film 80B, which is designed as described above, processing can be carried out to remove only parts of the intermediate layer insulating film 80I directly above the through-electrodes 80C, thereby forming openings 80h.

[0229] Consequently, the substrate 80F with printed wiring, in which the end sections of the through-electrodes 80C are exposed, whereas internal electrodes 80D are covered by the resist film 80B, can be obtained.

[0230] As described above, a pattern exposure can be carried out before or after the wiring pattern 80P is formed on the surface of the substrate 80.

[0231] It should be noted that, although the above description is carried out using examples of a positive type resist, the present invention may use a negative type resist, as previously explained.

[0232] It should be noted that the present invention is not limited to the embodiments described above. These embodiments are merely examples, and any examples that exhibit essentially the same features and demonstrate the same functions and effects as those in the technical concept disclosed in the claims of the present invention are included within the scope of protection of the present invention. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2017-132120 A

[0008]

Claims

[1] Exposure device for a printed wiring substrate for forming an exposure pattern for printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure device for a printed wiring substrate comprises: a first optical functional unit comprising a laser light source that performs irradiation with the pulsed laser beam, and an optical shaping system that shapes an irradiation pattern of the laser beam from the laser light source into a rectangular shape; a second optical functional unit with a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed; and a substrate table that holds the substrate, wherein the mask comprises a mask irradiation area to be irradiated with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask, the substrate comprises a substrate irradiation area onto which the pattern is to be projected by the laser beam that has passed through the mask, the substrate irradiation area is smaller than the area of ​​the substrate to be exposed, and The exposure device for a substrate with printed wiring is configured to perform a pass-through irradiation of the mask and substrate table during the exposure of the substrate, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area to perform a pattern exposure on the area of ​​the substrate to be exposed. [2] Exposure device for a printed wiring substrate for forming an exposure pattern for printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure device for a printed wiring substrate comprises: a first optical functional unit comprising a laser light source that performs irradiation with the pulsed laser beam, and an optical shaping system that shapes an irradiation pattern of the laser beam from the laser light source into a rectangular shape; a second optical functional unit with a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed; and a substrate table that holds the substrate, wherein the mask comprises a mask irradiation area to be irradiated with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask, the substrate comprises a substrate irradiation area onto which the pattern is to be projected by the laser beam that has passed through the mask, the substrate irradiation area is smaller than the area of ​​the substrate to be exposed, the mask and the substrate table are configured to operate synchronously in a plane direction that is essentially perpendicular to a direction of irradiation with the laser beam, in order to maintain a relatively corresponding positional relationship between them, and The exposure device for a substrate with printed wiring is configured to ensure that the mask and the substrate table operate synchronously during the exposure of the substrate, and to subject the mask and the substrate table to a continuous irradiation, with an irradiation position of the laser beam being fixed in order to perform a pattern exposure on the area of ​​the substrate to be exposed. [3] Exposure device for a substrate with printed wiring according to claim 1, wherein the mask and the substrate table are configured to operate synchronously in a plane direction that is substantially perpendicular to a direction of irradiation with the laser beam in order to maintain a relatively corresponding positional relationship between them, and The exposure device for a substrate with printed wiring is configured to cause the mask and the substrate table to operate synchronously during the exposure of the substrate, with one irradiation position of the laser beam being fixed, and to subject the mask and the substrate table to a continuous irradiation while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area in order to perform a pattern exposure on the area of ​​the substrate to be exposed. [4] Exposure device for a substrate with printed wiring according to one of claims 1 to 3, wherein the laser beam is an excimer laser. [5] Exposure device for a substrate with printed wiring according to one of claims 1 to 4, which further comprises a mask table that holds the mask and causes the mask to move in one pass. [6] Exposure device for a substrate with printed wiring according to one of claims 1 to 5, which further comprises a third optical functional unit with a reduced projection optical system between the second optical functional unit and the substrate table. [7] Exposure device for a substrate with printed wiring according to claim 6, wherein the third optical functional unit further comprises a coolant for cooling the reduced projection optical system. [8] Exposure device for a substrate with printed wiring according to one of claims 1 to 7, wherein the optical shaping system is an optical system comprising several cylindrical lenses and shaping the laser beam from the laser light source into a laser beam with a rectangular irradiation shape and uniform irradiation energy density. [9] Exposure device for a substrate with printed wiring according to one of claims 1 to 7, wherein the optical shaping system is an optical system comprising several cylindrical lenses and shaping the laser beam from the laser light source into a laser beam having the rectangular and cylindrical irradiation shape. [10] Exposure device for a substrate with printed wiring according to one of claims 1 to 9, wherein the second optical functional unit further shapes the irradiation shape of the laser beam through the mask, wherein the laser beam has passed through the first optical functional unit. [11] Exposure device for a substrate with printed wiring according to one of claims 1 to 10, wherein the device is configured to cause the mask and the substrate table to move in at least one direction in a single pass without pause during the pass-through irradiation, while the mask and the substrate table are irradiated with the pulsed laser beam. [12] Exposure device for a substrate with printed wiring according to any one of claims 1 to 11, further comprising: an imaging technique for reading a feature section of the substrate; an imaging tool for reading a feature section of the mask; and an alignment mechanism that aligns relative positions of the substrate and the mask based on position information about the feature section of the substrate and the feature section of the mask. [13] Exposure device for a substrate with printed wiring according to claim 12, which further comprises a means for correcting an exposure shape of the substrate with respect to the pattern of the mask based on information from the alignment mechanism. [14] Exposure device for a substrate with printed wiring according to any one of claims 1 to 13, wherein the mask is installed in a substantially perpendicular direction with respect to a horizontal plane in which the exposure device is installed. [15] Exposure method for forming an exposure pattern for a printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure method comprises: Providing an exposure device with a first optical functional unit comprising a laser light source and an optical shaping system, a second optical functional unit comprising a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed, and a substrate table holding the substrate; in the first optical functional unit, irradiation of the optical shaping system with the pulsed laser beam from the laser light source to shape an irradiation pattern of the laser beam into a rectangular shape; in the second optical functional unit, irradiating a mask irradiation area with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask; and Irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, where the substrate irradiation area is made smaller than the area of ​​the substrate to be exposed, and During the exposure of the substrate, the mask and the substrate table are subjected to a continuous irradiation, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area to perform a pattern exposure on the area of ​​the substrate to be exposed. [16] Exposure method for forming an exposure pattern for a printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure method comprises: Allowing the laser beam, shaped into a rectangular form, to pass through a mask to irradiate the substrate with the laser beam, in order to make a substrate irradiation area smaller than an area of ​​the substrate to be exposed, and During the exposure of the substrate, a pattern exposure is performed on the area of ​​the substrate to be exposed, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area. [17] Exposure method for forming an exposure pattern for a printed wiring by exposing a resist film formed on a surface of a substrate with irradiation energy of a laser beam, wherein the exposure method comprises: Providing an exposure device with a first optical functional unit comprising a laser light source and an optical shaping system, a second optical functional unit comprising a mask containing an effective area with a pattern corresponding to an area of ​​the substrate to be exposed, and a substrate table holding the substrate; in the first optical functional unit, irradiation of the optical shaping system with the pulsed laser beam from the laser light source to shape an irradiation pattern of the laser beam into a rectangular shape; in the second optical functional unit, irradiating a mask irradiation area with the laser beam that has passed through the first optical functional unit, wherein the mask irradiation area is part of the effective area of ​​the mask; and Irradiating a substrate irradiation area of ​​the substrate with the laser beam that has passed through the mask to project the pattern onto the substrate irradiation area, where the substrate irradiation area is made smaller than the area of ​​the substrate to be exposed, This causes the mask and the substrate table to operate synchronously in a plane direction that is essentially perpendicular to the direction of irradiation with the laser beam, in order to maintain a relatively corresponding positional relationship between them, and During the exposure of the substrate, where the irradiation position of the laser beam is fixed, the mask and the substrate table are made to work synchronously and are subjected to a continuous irradiation in order to perform a pattern exposure on the area of ​​the substrate to be exposed. [18] Exposure method according to claim 15, This ensures that the mask and the substrate table operate synchronously in a plane direction that is essentially perpendicular to the direction of irradiation with the laser beam, in order to maintain a relatively corresponding positional relationship between them, and During the exposure of the substrate, where an irradiation position of the laser beam is fixed, the mask and the substrate table are caused to operate synchronously and are subjected to a continuous irradiation, while a section from one substrate irradiation area is superimposed onto a section of another substrate irradiation area in order to perform a pattern exposure on the area of ​​the substrate to be exposed. [19] Exposure method according to claim 15, 17 or 18, wherein an excimer laser is used as the laser beam. [20] Exposure method according to claim 16, wherein an excimer laser is used as the laser beam. [21] Exposure method according to one of claims 15 and 17 to 19, wherein a mask table which holds the mask and causes the mask to move in one pass is further used. [22] Exposure method according to one of claims 15, 17 to 19 and 21, wherein the exposure device further comprises a third optical functional unit with a reduced projection optical system between the second optical functional unit and the substrate table. [23] Exposure method according to claim 22, wherein the third optical functional unit further comprises a coolant for cooling the reduced projection optical system. [24] Exposure method according to one of claims 15, 17 to 19 and 21 to 23, wherein an optical system with several cylindrical lenses is used as an optical shaping system to shape the laser beam from the laser light source into a uniform laser beam with a rectangular irradiation shape. [25] Exposure method according to one of claims 15, 17 to 19 and 21 to 24, wherein in the second optical functional unit the irradiation shape of the laser beam which has passed through the first optical functional unit is further shaped by the mask. [26] Exposure method according to one of claims 15, 17 to 19 and 21 to 25, wherein in the continuous irradiation in at least one direction the mask and the substrate table are caused to move in one pass without pause while being irradiated with the pulsed laser beam. [27] Exposure method according to one of claims 15, 17 to 19 and 21 to 26, wherein the continuous irradiation is repeated several times for each area of ​​the substrate to be exposed. [28] Exposure method according to any one of claims 15, 17 to 19 and 21 to 27, further comprising: Reading a feature segment of the substrate and a feature segment of the mask; and Alignment of relative positions of the substrate and the mask using an alignment mechanism based on position information about the feature section of the substrate and the feature section of the mask. [29] Exposure method according to claim 28, further comprising correcting an exposure shape of the substrate with respect to the pattern of the mask based on the information from the alignment mechanism. [30] Exposure method according to one of claims 15, 17 to 19 and 21 to 29, wherein the exposure device in which the mask is installed in a perpendicular direction with reference to a horizontal plane in which the exposure device is to be installed is used. [31] Manufacturing method for a substrate with printed wiring, comprising performing a pattern exposure on a resist film formed on a surface of a substrate by the exposure method according to any one of claims 15 to 30. [32] Manufacturing method for a substrate with printed wiring according to claim 31, wherein a wiring pattern is formed on the surface of the substrate after the pattern exposure has been carried out. [33] Manufacturing method for a substrate with printed wiring according to claim 31, wherein, after a wiring pattern is formed on the surface of the substrate, the resist film is formed on the surface of the substrate and subsequently the pattern exposure is carried out. [34] Manufacturing method for a substrate with printed wiring according to one of claims 31 to 33, wherein the substrate is a substrate for a semiconductor package.

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