BUILDING ELEMENT AND METHOD FOR MANUFACTURING A BUILDING ELEMENT

Abstract

A component (1) is described. The component (1) comprises an electronic component (2) with an outer surface (21) and a barrier structure (3) adjacent to the outer surface (21), wherein the barrier structure (3) at least partially surrounds at least parts of the outer surface (21) and the barrier structure (3) is configured to influence the lateral propagation of a medium (4) arranged on the outer surface (21). The electronic component is, in particular, a micro-LED. Furthermore, a method for manufacturing a component (1) is described.

Description

[0001] A component and a method for manufacturing a component are described.

[0002] The task is to provide a component with increased efficiency. Furthermore, a simple and efficient method for manufacturing such a component should be provided.

[0003] According to at least one embodiment, the component includes an electronic component. In particular, the electronic component has an outer surface. For example, the outer surface is at least partially aligned parallel to a principal plane of extension of the electronic component. The electronic component is, in particular, a sensor, an optoelectronic semiconductor chip, or a microelectromechanical system (MEMS).

[0004] The electronic component can be mounted on a substrate, for example, using an adhesive or solder. The substrate primarily serves to mechanically stabilize the electronic component. Furthermore, the substrate may be designed or configured to supply power to the electronic component. The substrate may be, for example, a wire frame, a ceramic wire frame, a printed circuit board, or a printed circuit board (PCB).

[0005] According to at least one embodiment, the component has a barrier structure. In particular, the barrier structure is, for example, directly adjacent to the outer surface of the electronic component. For example, the outer surface is bounded by the barrier structure in at least one direction. In other words, the barrier structure has a space-defining or space-enclosing function. It is possible that the barrier structure is part of the outer surface of the electronic component. The barrier structure can form a frame or a frame-like structure that surrounds at least parts of the outer surface, for example, in the lateral directions that run parallel to the main extension plane of the electronic component.

[0006] In particular, the barrier structure has an inside and an outside. The inside, for example, faces the outer surface of the electronic component. The outside is located, for example, near or on the side surfaces of the electronic component. In other words, the inside of the barrier structure is located, in particular, between the outer surface of the electronic component and the outside of the barrier structure. The inside and outside of the barrier structure can be perpendicular, in particular perpendicular, to the outer surface of the electronic component. For example, the inside and outside of the barrier structure may be parallel. However, it is also possible for the inside and outside to be inclined relative to each other.

[0007] According to at least one embodiment of the component, the barrier structure surrounds at least parts of the outer surface, at least partially. For example, the barrier structure surrounds the entire outer surface, at least partially. In particular, the barrier structure encloses at least 90% of parts of the outer surface, for example, completely. If the barrier structure does not completely surround the outer surface, one side of the outer surface is partially free of the barrier structure.

[0008] According to at least one embodiment of the component, the barrier structure is designed or configured to influence the lateral propagation of a medium. Lateral means, for example, parallel to the outer surface. In particular, the barrier structure influences the lateral propagation of the medium. The barrier structure can limit the propagation of the medium in lateral directions.

[0009] According to at least one embodiment of the component, the medium is arranged on the outer surface. In particular, the medium is in direct contact with the outer surface. The medium is, for example, a gas, air, an adhesive, or a phosphor. In particular, the medium covers the outer surface at least partially, for example, completely. The fact that the medium is a gas has the particular advantage that the medium can act as an angle filter and reflective element. The medium can be in direct contact with the barrier structure.

[0010] According to at least one embodiment, the component comprises the electronic component with the outer surface and the barrier structure adjacent to the outer surface, wherein the barrier structure at least partially surrounds at least parts of the outer surface and the barrier structure is designed to influence the lateral propagation of the medium arranged on the outer surface.

[0011] The barrier structure allows the medium to spread advantageously and evenly across the outer surface. It prevents the medium from overflowing the barrier structure, ensuring that the sides of the electronic component remain free of the medium. Furthermore, the flow rate of the medium is higher, particularly along the barrier structure, for example, on its inner surface. This allows the medium to spread more efficiently and, in particular, more quickly across the outer surface, advantageously achieving complete coverage of the outer surface with the medium. Additionally, the barrier structure effectively prevents potting compounds or encapsulation compounds from coming into contact with the outer surface of the electronic component, thus preventing contamination.

[0012] According to at least one embodiment of the device, the barrier structure comprises at least one barrier element. In particular, the at least one barrier element forms the barrier structure. The barrier element has, for example, an inside and an outside. The inside of the barrier element is, in particular, arranged between the outside of the barrier element and the outer surface of the electronic component. For example, the inside and the outside of the barrier element are arranged parallel to each other. However, it is also possible that the inside and the outside of the barrier element are inclined relative to each other.

[0013] In particular, the barrier element is a wall. Here and in the following, a wall is understood to be a structural element that at least partially delimits an area. The wall has, for example, a height, a diameter, and a length. The height can be measured perpendicular to the outer surface of the electronic component. The diameter of the wall is an extension parallel to the outer surface of the electronic component, which can be measured in a cross-section of the wall. The wall is, for example, a vertical structure that at least partially surrounds the area. Here and in the following, "vertical" means a direction perpendicular to the outer surface of the electronic component.

[0014] According to at least one embodiment of the components, the barrier structure comprises a plurality of barrier elements, for example, two, three, or more barrier elements. More than one barrier element advantageously enhances the barrier properties of the barrier structure. In particular, the barrier elements are parallel or concentric to one another. For example, each barrier element surrounds the outer surface of the electronic component at least partially, in particular to at least 90%, for example, completely. In particular, the inner surface of one barrier element forms the inner surface of the barrier structure, and the outer surface of another barrier element forms the outer surface of the barrier structure.

[0015] According to at least one embodiment of the component, at least two barrier elements of the plurality of barrier elements have different heights. In particular, the height of a first barrier element differs from the height of a second barrier element by between 20% and 70%, more specifically 30% to 60%, for example, about 50%. The height of a barrier element is understood here and in the following to mean its extent perpendicular to the outer surface of the electronic component. In particular, barrier elements located closer to the outer surface of the electronic component have a lower height than barrier elements located further away from the outer surface of the electronic component. Thus, the barrier structure may have an inner surface that is inclined away from the outer surface of the electronic component.Advantageously, with at least two barrier elements that have different heights, it is possible for a structural element, such as a cover layer, arranged above the outer surface of the electronic component to align itself independently.

[0016] According to at least one embodiment of the component, the diameter of the barrier structure is between and including 0.1 micrometers and 50 micrometers. The diameter of the barrier structure is the mean distance between the inside and outside of the barrier structure. For example, the diameter of the barrier structure is measured in a cross-section of the component.

[0017] According to at least one embodiment of the component, the diameter of the barrier element is between and including 0.1 micrometers and 15 micrometers, and in particular between and including 1 micrometer and 3 micrometers. The diameter of the barrier element is, in particular, at least 0.5 micrometers and / or at most 10 micrometers. The diameter of the barrier element is the mean distance between the inside and outside of the barrier element. If the barrier structure has multiple barrier elements, the barrier elements may have the same or substantially the same diameter. However, it is also possible for two barrier elements to have different diameters.

[0018] According to at least one embodiment of the component, the height of the barrier structure is between and including 0.1 micrometers and 15 micrometers, in particular between and including 1 micrometer and 3 micrometers. The height of the barrier structure is the greatest extent of the barrier structure in a direction perpendicular to the outer surface. In particular, the height of the barrier structure is at least 0.5 micrometers and / or at most 10 micrometers.

[0019] According to at least one embodiment of the component, the height of the at least one barrier element is between and including 0.1 micrometers and 15 micrometers, in particular between and including 1 micrometer and 3 micrometers. In a case where the barrier structure has several barrier elements, the barrier elements have, for example, the same height or substantially the same height. In particular, the height of the barrier structure corresponds to the height of the barrier element with the greatest height.

[0020] According to at least one embodiment of the component, the barrier structure has a distance of no more than 10 micrometers from the edges and / or side surfaces of the electronic component. In particular, the barrier structure is flush with the side surfaces of the electronic component.

[0021] According to at least one embodiment of the component, the barrier structure comprises or consists of a material of the electronic component. In particular, the at least one barrier element comprises or consists of a material of the electronic component. For example, the barrier structure is formed from the electronic component. In other words, the barrier structure is monolithic with the electronic component. It is possible that the barrier structure comprises or consists of a material of the outer surface of the electronic component. Advantageously, the barrier structure, which comprises the material of the electronic component, does not detach from the electronic component. Furthermore, the barrier structure, which comprises the material of the electronic component, can be formed during the manufacturing of the electronic component.Advantageously, the barrier structure is formed during already established steps in the manufacturing of the electronic component.

[0022] According to at least one embodiment of the component, the barrier structure comprises or consists of a material selected from the group consisting of a polysiloxane, a silicone, an epoxy resin, a photoresist, and combinations and mixtures thereof. The polysiloxane is, in particular, a silicone. Here and in the following, a polysiloxane can have M (R3SiO-), D (-OSiR2O-), T (-O2SiRO-), and Q (-OSiO3-) units, wherein the silicone is formed only from D units. In particular, the at least one barrier element comprises or consists of the material selected from the group consisting of the polysiloxane, the silicone, the epoxy resin, the photoresist, and combinations and mixtures thereof.

[0023] According to at least one embodiment of the component, at least two barrier elements from the plurality of barrier elements comprise or consist of the same material. Alternatively, at least two barrier elements from the plurality of barrier elements comprise or consist of different materials. For example, one barrier element comprises or consists of a polysiloxane, an epoxy, or a photoresist, and another barrier element comprises or consists of the material of the electronic component. Advantageously, barrier elements with different materials exhibit increased efficiency.

[0024] According to at least one embodiment of the component, the barrier structure has an inclined shape. It is possible that the at least one barrier element has an inclined shape. A barrier structure having an inclined shape has an inner or outer surface that is inclined towards or away from the outer surface of the electronic component. In particular, the barrier structure that comprises or consists of a material selected from the group consisting of polysiloxane, silicone, epoxy resin, photoresist, and combinations and mixtures thereof, has an inclined shape. The inclined shape allows for the simple and efficient positioning of an element above the outer surface, for example, a cover layer. Advantageously, the element above the outer surface is smaller than the outer surface when viewed from above.

[0025] According to at least one embodiment, the component further comprises a cover element. In particular, the barrier structure is arranged between the electronic component and the cover element. For example, the barrier structure is designed or configured such that the electronic component and the cover element are spaced apart from each other. The cover element can be in direct contact with the barrier structure. The outer surface of the electronic component, the barrier structure, and the cover element form, for example, a cavity filled with the medium. Advantageously, the cover element protects the electronic component, especially its outer surface, from environmental influences. However, it is also possible for the cover element to have a desired function, for example, as an optical element.

[0026] In particular, the medium exhibits a higher flow velocity on the surface of the cover element facing the electronic component compared to the flow velocity on the outer surface. Therefore, the cover element can also be advantageously used to completely and homogeneously cover the outer surface with the medium. Since the medium has the higher flow velocity on the surface of the cover element facing the electronic component, it can also prevent the side surfaces of the electronic component from being covered with the medium. This improves the efficiency of the component.

[0027] According to at least one embodiment of the component, the medium is an adhesive. In particular, the adhesive is arranged between the electronic component and the cover layer. Advantageously, the adhesive serves to efficiently bond the cover element to the electronic component. For example, the adhesive is limited by the barrier structure.

[0028] In particular, the adhesive comprises or consists of a material selected from the group consisting of a polysiloxane, a silicone, an epoxy, and mixtures and combinations thereof. The adhesive may contain particles such as fluorescent particles, fillers, and / or scattering particles.

[0029] According to at least one embodiment of the components, the barrier structure comprises at least two barrier elements, and an adhesive is arranged between two barrier elements. In particular, the adhesive is enclosed between the two barrier elements. The distance between the two barrier elements is, for example, between and including 5 micrometers and 150 micrometers. Advantageously, the barrier elements prevent the adhesive from covering the outer surface of the electronic component. Furthermore, it is possible to efficiently attach the cover element to the barrier structure and thus to the electronic component. This makes it possible to provide a component in which the medium is a gas, while the cover element is still efficiently attached to the electronic component.

[0030] According to at least one embodiment of the component, guide structures are arranged on the outer surface of the electronic component. These guide structures are specifically designed or configured to improve the propagation of the medium on the outer surface of the electronic component. For example, the guide structure may be channels arranged on the outer surface of the electronic component. The guide structure may also be walls. Capillary action at the channels and / or walls improves the propagation of the medium and / or increases the flow velocity of the medium towards the barrier structure.

[0031] In particular, at least one end of the guide structures is directed towards the corners of the electronic component. The guide structures are made of, for example, a material selected from the following group: the barrier structure material, the barrier element material, the electronic component material, and especially the outer surface material. The diameter of the channels is, for example, between and including 1 micrometer and 100 micrometers. It is possible that the guide structures, especially the channels, are bounded by walls. For example, the walls of the guide structures may have the same or a similar diameter to the barrier elements.

[0032] According to at least one embodiment of the component, the electronic component is an optoelectronic semiconductor chip. The optoelectronic component is, for example, designed or configured to emit or detect electromagnetic radiation in the ultraviolet to infrared range of the electromagnetic spectrum. In particular, the optoelectronic semiconductor chip comprises a sequence of semiconductor layers. The sequence of semiconductor layers includes, for example, an active layer capable of generating or detecting electromagnetic radiation in the ultraviolet to infrared range of the electromagnetic spectrum. The optoelectronic semiconductor chip may have a radiation emission surface or a radiation entry surface.

[0033] According to at least one embodiment of the component, the outer surface is formed with or by at least a part of the radiation emission surface or the radiation entry surface of the optoelectronic semiconductor chip. In other words, the outer surface corresponds at least partially to the radiation emission surface or the radiation entry surface.

[0034] According to at least one embodiment of the component, the electronic component, in particular the optoelectronic semiconductor chip, includes or is a micro-LED. LED is, here and in the following, the abbreviation for light-emitting device.

[0035] Micro-LEDs can have a width, length, thickness, and / or diameter of less than or equal to 100 micrometers, particularly less than or equal to 70 micrometers, for example, less than or equal to 50 micrometers. Specifically, micro-LEDs, for example, rectangular micro-LEDs, have an edge length, particularly in a top view of the semiconductor layer sequence, of a luminous area of ​​less than or equal to 70 micrometers, for example, less than or equal to 50 micrometers. A micro-LED is, for example, a light-emitting diode from which the growth substrate has been removed, such that the thickness of the micro-LED is in the range between and including, for example, 1.5 micrometers and 10 micrometers. The micro-LED is provided, for example, on a wafer with removable support structures. The micro-LED can be removed from the wafer non-destructively.

[0036] According to at least one embodiment of the component, the cover element is an optical element. The optical element is specifically selected from the group consisting of a lens, a conversion element, and a scattering layer. For example, the extent of the optical element parallel to a principal plane of extension of the electronic component is greater than, less than, or equal to the extent of the radiation exit surface or the radiation entry surface.

[0037] According to at least one embodiment of the component, the barrier structure, in particular the barrier element, comprises or consists of a material from the semiconductor layer sequence. Specifically, the barrier structure, for example the barrier element, comprises or consists of a semiconductor material such as GaN. Advantageously, the material of the semiconductor layer sequence can be easily and efficiently structured in a desired manner. This enables efficient formation of the barrier structure.

[0038] According to at least one embodiment of the component, a radiation output path or a radiation input path of the optoelectronic semiconductor chip passes through GaN. In this case, the barrier structure, for example the barrier element, in particular has GaN or consists of it.

[0039] According to at least one embodiment of the component, the barrier structure has a protective layer. In particular, the protective layer forms an outermost layer of the barrier structure. The protective layer, for example, replicates a shape of the barrier elements. The protective layer can be a stack of layers. In particular, the protective layer comprises a ceramic, an oxide, and / or a nitride. The protective layer comprises, for example, Si3N4 or SiO2, or consists of these materials.

[0040] The protective layer can have a thickness of several nanometers, for example, between and including 1 nanometer and 15 nanometers. Advantageously, the protective layer protects a barrier material, especially GaN, from environmental influences such as moisture and harmful gases like NO. x -gases.

[0041] According to at least one embodiment of the component, a protective layer is arranged on the outer surface of the electronic component, in particular the optoelectronic semiconductor chip. Features of the protective layer on the outer surface are also disclosed, for example, which are disclosed in combination with the protective layer of the barrier structure.

[0042] According to at least one embodiment of the component, output structures are arranged on or at the outer surface of the electronic component. In particular, the output structures are arranged on or at the radiation emission surface of the optoelectronic semiconductor chip. Advantageously, the output structures can improve the output efficiency of the optoelectronic semiconductor chip. The output structures are, for example, protrusions on the outer surface. In particular, at least a portion of the output structures has a rectangular shape in plan view, especially a square, triangular, hexagonal, or round shape. For example, the output structures have a pyramidal shape. It is also possible that at least a portion of the output structure has the shape of a wall. Advantageously, the output structures act, at least partially, as guide structures and vice versa.This can improve the efficiency of the medium's propagation while simultaneously improving the output efficiency of the optoelectronic semiconductor chip.

[0043] According to at least one embodiment of the device, the output coupling structures are formed with the material of the semiconductor layer sequence. For example, the output coupling structures are formed with GaN. The material of the semiconductor layer sequence, in particular GaN, can advantageously be structured simply and efficiently in the desired manner.

[0044] According to at least one embodiment of the component, the medium is a phosphor layer. In particular, the phosphor layer comprises a matrix material and a phosphor. The matrix material comprises, for example, a resin selected from the group of polysiloxanes, especially silicones, epoxides, and their combinations and mixtures. The phosphor can be homogeneously distributed within the matrix material. Alternatively, the phosphor can, for example, exhibit a gradient within the matrix material. It is possible that the phosphor layer also comprises fillers and / or scattering particles. In the case where the medium is the phosphor layer, the barrier structure advantageously acts both as a boundary structure and as an anchoring structure for the phosphor layer.

[0045] According to at least one embodiment of the component, the phosphor is a ceramic phosphor and / or a quantum dot phosphor. The ceramic phosphor is, in particular, a garnet phosphor, for example YAG (Y3Al5O). 12 :Ce 3+ ) or LuAG (Lu3Al5O 12 :Ce 3+ ), or a nitride phosphor, for example, an alkaline earth metal silicon nitride, an oxynitride, an aluminum oxynitride, a silicon nitride, or a sialon. Grant phosphor, for instance, converts electromagnetic radiation in the blue wavelength range into electromagnetic radiation in the green to orange wavelength range. Nitride phosphor, for example, converts electromagnetic radiation in the blue wavelength range into electromagnetic radiation in the orange to red wavelength range.

[0046] In particular, the phosphor is selected from the group consisting of Ce 3+-doped shells, such as YAG and LuAG, for example (Y, Lu, Gd, Tb)3 (Al 1-x ,Ga x )50 12 :Ce 3+ ; Eu 2+ -doped nitrides, for example (Ca, Sr)AlSiN3:Eu 2+ Sr (Ca, Sr) Si2Al2N e :Eu 2+ (SCASN), (Sr,Ca)AlSiN3*Si2N2O:Eu 2+ , (Ca, Ba, Sr)2Si5N8:Eu 2+ , SrLiAl3N4:Eu 2+ , SrLi2Al2O2N2:Eu 2+ ; Ce 3+ doped nitrides, for example (Ca, Sr)Al (1-4x / 3) Si (1+x) N 3: Ce; (x = 0.2 - 0.5); Eu 2+ -doped sulfides, (Ba,Sr,Ca) Si2O2N2:Eu 2+ , SiAlONe, nitrido orthosilicates (e.g. AE 2-x-a RE x EU a Si 1-y O 4-x-2y N x ), orthosilicates (Ba, Sr, Ca)2SiO4:Eu 2+ ; Chlorosilicates (e.g. Ca8Mg (SiO4)4Cl2:Eu 2+ ); Mn 4+ -doped fluorides, for example (K,Na)2 (Si, Ti)F6:Mn 4+ ; Eu 2+ - or Ce 3+doped litho-silicates, such as (Li, Na, K, Rb, Cs) (Li3SiO4):E with E = Eu 2+ , Ce 3+ , or (Sr, Li) Li3AlO4:Eu 2+ or SrLi3AlO4:Eu 2+

[0047] Additionally or alternatively, the phosphor can be a silicon-containing and / or aluminum-containing phosphor, for example selected from the following group: (Ba 1-x-y Sr x Approx y ) SiO4:Eu 2+ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), (Ba 1-x-y Sr x Approx y )3SiO5:Eu 2+ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), Li2SrSiO4:Eu 2+ , Oxynitrides such as (Ba 1-x-y Sr x Approx y ) Si2O2N2:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), SrSiA12O3N2:Eu 2+ , Ba 4-x Approx x Si6ON 10 :Eu 2+ (0 ≤ x ≤ 1), (Ba 1-x Sr x ) Y2Si2Al2O2N5:Eu 2+ (0 ≤ x ≤ 1), Sr x Si (6-y) Al y O y N (8-y) :Eu 2+ (0.05 ≤ x ≤ 0.5; 0.001 ≤ y ≤ 0.5), Si6-z the z A z N 8-z :E u 2+ (0 ≤ z ≤ 0.42), M x And 12-m-n the m+n A n N 16-n :I 2+ (M = Li, Mg, Ca, Y; x = m / v; v = Wertigkeit M, x ≤ 2), M x And 12-m-n the m+n A n N 16-n :What 3+ , AE 2-x-a RE x I a And 1-y A 4-x-2y N x (AE = Sr, Ba, Ca, Mg; RE = Seltenerdmetall), AE 2-x-a RE x I a And 1-y A 4-x-2y N x (AE = Sr, Ba, Ca, Mg; RE = Seltenerdmetall), Ba3S 16 A 12 N2:Me 2+ or nitrides such as La3Si6N 11 :What 3+ , (Ba 1-x-y Sr. x That y )2Si5N8:I 2+ , (As 1-x-y Sr. x nay y )AlSiN3:I 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), Sr(Sr 1-x That x )Al2Si2N6:I 2+ (0 ≤ x ≤ 0.2), Sr(Sr 1-x That x )Al2Si2N6:Ce 3+(0 ≤ x ≤ 0.2) SrAlSi4N7:Eu 2+ , (Ba 1-x- y Mr. x Here y )SiN2:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba 1-x-y Mr. x Here y )SiN2:Ce 3+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Mr 1-x Here x )LiAl3N4:Eu 2+ (0 ≤ x ≤ 1), (Ba 1-x-y Mr. x Here y Mg2Al2N4:E u 2 + (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba 1-x-y Mr. x Here y Mg3SiN4:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1).

[0048] According to at least one embodiment, the component features encapsulation. In particular, the barrier structure prevents the encapsulation from covering the outer surface. This advantageously prevents contamination of the outer surface by the encapsulation, thereby increasing the component's efficiency. Specifically, the encapsulation does not impede electromagnetic radiation from entering or leaving the optoelectronic semiconductor chip. The encapsulation is, for example, in direct contact with the barrier structure.

[0049] Furthermore, a method for manufacturing a component is specified. In particular, the method is suitable and intended for manufacturing the component described herein. Thus, the features, embodiments, and advantages described in connection with the component also apply to the method, and vice versa.

[0050] According to at least one embodiment of the method, an electronic component with an outer surface is provided. The electronic component can have a structure as described above.

[0051] According to at least one embodiment of the method, a barrier structure is arranged adjacent to the outer surface of the electronic component. In particular, the barrier structure surrounds at least parts of the outer surface, at least partially.

[0052] According to at least one embodiment of the method, a medium is arranged on the outer surface. In particular, the barrier structure influences the lateral spreading of the medium.

[0053] According to at least one embodiment, the method comprises providing an electronic component with an outer surface, arranging a barrier structure adjacent to the outer surface, wherein the barrier structure at least partially surrounds at least parts of the outer surface, and arranging a medium on the outer surface, wherein the barrier structure influences a lateral propagation of the medium.

[0054] According to at least one embodiment of the method, the barrier structure is formed by means of lithography, in particular photolithography. Specifically, the barrier elements of the barrier structure are formed in this way. For example, lithography is used to create a structured mask on the electronic component.

[0055] According to at least one embodiment of the method, the barrier structure is formed by an etching process, in particular by plasma etching. The barrier structure, in particular the barrier element, can be formed from the electronic component using this etching process.

[0056] According to at least one embodiment of the method, the barrier structure, in particular the barrier element, is formed on the outer surface during the formation of the coupling structures and / or during the formation of the guide structures.

[0057] According to at least one embodiment, the method further comprises the application of a covering layer to the medium. In this case, the medium is, in particular, an adhesive. For example, spreading the medium on the covering layer is faster than spreading the medium on the outer surface. This advantageously results in complete coverage of the outer surface, while still leaving side surfaces of the electronic component free of the medium.

[0058] According to at least one embodiment of the method, the medium is a phosphor layer. Arranging the medium on the outer surface thus constitutes arranging the phosphor layer on the outer surface. In particular, the phosphor layer is arranged on the outer surface by dispensing, thin-film dipping, or jetting. In thin-film dipping, a thin layer, for example, with a thickness of 1 micrometer to and including 2 micrometers, comprising the phosphor layer or a precursor of the phosphor layer, is deposited, in particular by centrifugation, onto a wafer. The electronic component, in particular the optoelectronic semiconductor chip, is then dipped into the thin layer, so that the phosphor layer forms on the electronic component. For example, the phosphor layer is filled into a cavity formed by the outer surface and the barrier structure.

[0059] Advantageously, this method allows the formation of a phosphor layer on the outer surface without covering the side surfaces of the electronic component with the phosphor layer. Furthermore, lithographic processes and / or doctor blades are no longer necessary to apply the phosphor layer to the outer surface. The barrier structure efficiently forms a boundary for the spread of the phosphor layer, while still achieving complete coverage of the outer surface.

[0060] According to at least one embodiment, the method involves applying an evaporating material to the outer surface, applying a cover layer to the evaporating material, and replacing the evaporating material with the medium. In particular, the medium in this case is a gas, such as air. During the replacement of the evaporating material, it is removed, for example, by evaporation. In this way, a component with an efficiently applied cover layer, in particular a lens, can be provided, achieving a refractive index change between the electronic component and the medium, thus increasing the efficiency of the lens.

[0061] Advantageous embodiments and further developments of the component and the method for manufacturing a component result from the exemplary embodiments described below in conjunction with the figures.

[0062] In the characters: Fig. Figure 1A shows a schematic cross-section of a component according to an exemplary embodiment. Fig. 1B and Fig. Figure 1C shows a schematic top view of a component according to an exemplary embodiment. Fig. Figures 2 to 4 show schematic cross-sections of the component, each according to an exemplary embodiment. Fig. Figure 5 shows a schematic top view of a component according to an exemplary embodiment. Fig. 6A and Fig. Figure 6B shows schematic views of a component according to an exemplary embodiment. Fig. 7A and Fig. Figure 7B shows schematic views of a component according to an exemplary embodiment. Fig. 8A, Fig. 8B, Fig. 9A, Fig. 9B, Fig. 10A and Fig. Figure 10B shows schematic views of steps in a process for manufacturing a component according to an exemplary embodiment. Fig. 11A, Fig. 11B, Fig. 12A, Fig. 12B, Fig. 13A and Fig. Figure 13B shows schematic views of steps of a method for manufacturing a component according to an exemplary embodiment. Fig. 14A, Fig. 14B, Fig. 15A, Fig. 15B, Fig. 16A and Fig. Figure 16B shows schematic views of steps in a method for manufacturing a component according to an exemplary embodiment. Fig. Figures 17A to 17C show schematic cross-sections of steps in a method for manufacturing a component according to an exemplary embodiment. Fig. Figures 18A to 18D show schematic cross-sections of steps in a method for manufacturing a component according to an exemplary embodiment. Fig. Figure 19 shows a schematic cross-section through a component according to an exemplary embodiment.

[0063] In the exemplary embodiments and figures, identical or similarly functioning components are designated with the same reference numerals. The elements shown in the figures and their relative sizes are not to be considered to scale. Rather, individual elements may be enlarged for the purpose of better illustration and / or understanding.

[0064] The component 1 according to the in Fig. The embodiment shown in Figure 1A comprises an electronic component 2. The electronic component 2 is, for example, a MEMS, a sensor, or an optoelectronic semiconductor chip. The electronic component 2 has an outer surface 21, which in this case is arranged parallel to a principal plane of extension of the electronic component 2. A barrier structure 3 borders the outer surface 21. The barrier structure 3 is designed to influence the propagation of the medium 4. The medium 4 is arranged in the cavity formed by the electronic component 2 and the barrier structure 3. The medium 4 is arranged on and in direct contact with the outer surface 21.

[0065] The barrier structure 3 has an inner surface 32 and an outer surface 33, which run parallel to each other. The inner surface 32 is located between the outer surface 21 of the electronic component 2 and the outer surface 33 of the barrier structure 3. The outer surface 33 is flush with a side surface 24 of the electronic component 2. The barrier structure 3 surrounds at least parts of the outer surface 21 by at least 90%. The barrier structure 3 is made of the same material as the electronic component 2.

[0066] In the top view, as in the Fig. 1B and Fig. As shown in Figure 1C, the barrier structure 3 surrounds at least parts of the outer surface 21, at least partially. In the embodiment of the Fig. 1B completely surrounds the barrier structure 3, at least parts of the outer surface 21. In the embodiment of the Fig. 1C is one side of the outer surface 21 partially free of the barrier structure 3. In other words, the barrier structure 3 has a gap 34. The gap 34 allows for the exchange of substances between the environment and the medium 4. The barrier structure 3 runs parallel to the edges of the electronic component 2. The barrier structure 3 can have rounded or sharp corners.

[0067] The component 1 according to the exemplary embodiment of the Fig. Component 2 has a barrier structure 3, which comprises a material selected from the group consisting of a polysiloxane, an epoxy, and mixtures and combinations thereof. The barrier structure 3 surrounds an outer surface 21 of an electronic component 2. The barrier structure 3 has an inclined shape. In this case, the inclined shape is such that the inner surface 32 of the barrier structure is inclined away from the outer surface 21 of the electronic component 2.

[0068] The slanted shape of the barrier structure 3 can be used to align and secure a cover element 5, as shown in Fig. 3 shown. That in Fig. The cover element 5 shown in Figure 3 is smaller than the electronic component 2 in the top view. The medium 4 arranged between the cover element 5 and the electronic component 2 is, for example, a gas or an adhesive.

[0069] Another embodiment of component 1 is shown in Fig. Figure 4 shows the component 1 having a support 9 on which an electronic component 2 is arranged. The support 9 can be a PCB. The electronic component 2 has an outer surface 21, part of which is completely enclosed by a barrier structure 3. An outer surface 33 of the barrier structure 3 is flush with a side surface 24 of the electronic component 2. A cover element 5 is arranged on the barrier structure 3. In this case, the electronic component 2 is an optoelectronic semiconductor chip and the cover element 5 is an optical element selected from the group consisting of a phosphor layer, a lens, or a diffusing layer. The optoelectronic semiconductor chip 2, the barrier structure 3, and the optical element 5 form a cavity that is filled with a medium 4. The medium 4 can be a gas or an adhesive.The optoelectronic semiconductor chip 2, the barrier structure 3, and the optical element 5 are surrounded by an encapsulation 11. The encapsulation 11 contains a polysiloxane and scattering particles, for example, TiO2 or SiO2 particles.

[0070] The barrier structure 3 prevents the encapsulation 11 from penetrating the cavity formed by the optoelectronic semiconductor chip 2, the barrier structure 3, and the optical element 5. This improves the efficiency of the device by preventing radiation losses due to the encapsulation 11, which is located in a light path from the optoelectronic semiconductor chip 2 to the optical element 5. Furthermore, even with small cavities between the barrier structure 3 and the optical element 5, only the polysiloxane can enter the cavity filled with the medium 4. This prevents at least the scattering particles from being located between the optoelectronic semiconductor chip 2 and the optical element 5.

[0071] In Fig. Figure 5 shows a further embodiment of a component 1 in a top view. The component 1 comprises an electronic component 2 and a barrier structure 3. The barrier structure 3 is formed by a barrier element 31. The barrier structure 3 is spaced from the side surfaces 24 of the electronic component 2. The barrier structure 3 has a distance of at most 10 micrometers from the side surfaces 24 of the electronic component 2. The barrier element 31 has a diameter between and including 1 micrometer and 3 micrometers. The height of the barrier element 31 is in the same micrometer range.

[0072] The barrier structure 3 completely surrounds at least parts of an outer surface 21 of the electronic component 2. Furthermore, coupling structures 8 are arranged on the outer surface 21. In this case, the coupling structures 8 and the barrier element 31 are formed from a material of the electronic component. However, it is also possible for the barrier element 31 to be formed from a different material. The coupling structures 8 are formed, in particular, by the same method as the barrier structure 3 if the coupling structures 8 are made of the same material as the barrier element 31.

[0073] In this case, the coupling structures 8 have the same height and diameter as the barrier element 31 and thus the barrier structure 3. However, it is also possible that the coupling structures 8 have a lower height than the barrier element 31 and thus the barrier structure 3.

[0074] Fig. 6A and Fig. Figure 6B shows a further embodiment of a component 1. Fig. 6A shows component 1 in cross-section, while in Fig. 6B shows component 1 in a top view.

[0075] The component 1 comprises an electronic component 2, which is an optoelectronic semiconductor chip. The optoelectronic semiconductor chip 2 has a sequence of semiconductor layers 22 in which electromagnetic radiation is generated in an active layer. The electromagnetic radiation is emitted via a radiation emission surface 23. The radiation emission surface 23 corresponds at least partially to an outer surface 21 of the optoelectronic semiconductor chip 2. The semiconductor layer sequence 22 comprises the semiconductor material GaN. Thus, one radiation emission path of the semiconductor chip runs through GaN. A medium 4 is arranged on the radiation emission surface 23. The optoelectronic semiconductor chip 2 can also be covered with a cover element 5, for example, an optical element (not shown).

[0076] At least part of the outer surface 21 is completely surrounded by a barrier structure 3. The barrier structure 3 is monolithic with the optoelectronic semiconductor chip 2. In this case, the barrier structure 3 consists of a barrier element 31, which is arranged at the edges of the optoelectronic semiconductor chip 2. The barrier element 31, and thus the barrier structure 3, comprises a material of the semiconductor layer sequence 22. In this case, the barrier structure 3 comprises GaN. The barrier structure 3 runs parallel to the edges of the optoelectronic semiconductor chip 2. The corners of the barrier structure 3 are sharp in this case, but it is also possible for the corners of the barrier structure to be rounded. This is the case, for example, in Fig. 8B shown.

[0077] Output coupling structures 8 are arranged on the radiation output surface 23. These output coupling structures 8 are protrusions from the radiation output surface 23, which comprises or consists of the material of the semiconductor layer sequence 22. In this case, the output coupling structures 8 comprise or consist of GaN. The output coupling structures 8 have a pyramidal shape. The output coupling structures 8 are arranged in a regular pattern on the radiation output surface 23. It is possible that the output coupling structures 8 and the barrier structure 3 are fabricated using the same process.

[0078] Fig. 7A and Fig. Figure 7B shows a further embodiment of a component 1. Fig. 7A shows component 1 in a cross-section, while in Fig. 7B shows component 1 in a top view.

[0079] A barrier structure 3 with an outer surface 21 is arranged on an electronic component 2. The barrier structure 3 completely surrounds at least parts of the outer surface 21. The barrier structure 3 is flush with the side surfaces 24 of the electronic component 2. A medium 4 is arranged on the outer surface 21. The spread of the medium 4 is influenced by the barrier structure 3. In this case, the barrier structure 3 limits the spread of the medium 4 while still allowing the outer surface 21 to be completely covered by the medium 4. This is due to the capillary forces acting on the barrier structure 3.

[0080] The barrier structure 3 has two barrier elements 31 spaced apart from each other. An adhesive 6 is arranged between the two barrier elements 31. Thus, the barrier structure 3 consists of the two barrier elements 31 and the adhesive 6. The barrier structure 3 serves to attach a cover element 5 to the electronic component 2. The adhesive 6 ensures efficient bonding. The medium 4 enclosed by the outer surface 21, the barrier structure 3, and the cover element 5 can be chosen arbitrarily. The medium 4 does not necessarily have to be another adhesive, since the barrier structure 3 with the adhesive 6 is used to hold the cover element 5. The medium is, for example, a gas such as air. In this way, a refractive index change can be achieved.

[0081] A method for manufacturing a component 1 according to an exemplary embodiment is described below with reference to the Fig. 8 to 10 described.

[0082] As in the Fig. As shown in Figures 8A (cross-section) and 8B (top view), an electronic component 2, in this case an optoelectronic semiconductor chip, is provided on a substrate 9. The substrate 9 is a PCB with a bond pad 10. The bond pad 10 is located next to the optoelectronic semiconductor chip 2 on the substrate 9 and enables an electrical connection between the two. The optoelectronic semiconductor chip 2 has a GaN semiconductor layer sequence 22 and an outer surface 21, which is formed by a radiation exit surface 23 or radiation entry surface of the optoelectronic semiconductor chip 2. Output coupling structures 8 can be arranged on the outer surface 21 (not shown).

[0083] At least part of the outer surface 21 is surrounded by a barrier structure 3. In this case, the barrier structure 3 comprises three barrier elements 31 made of GaN. The three barrier elements 31 are formed from the semiconductor layer sequence 22 using plasma etching and a photolithographically fabricated mask. The three barrier elements 31 can have the same height. Alternatively, the barrier element 31 closest to the outer surface 31 has a lower height than the other two barrier elements 31. The height of the smallest and tallest barrier elements 31 differs by 50%. The height of each barrier element 31 is between 1 micrometer and 3 micrometers, inclusive. The diameter of the barrier elements 31 can also be within this range.

[0084] A medium 4, which in this case is an adhesive 41, is arranged on the outer surface 21.

[0085] As in Fig. Figures 9A (cross-section) and 9B (top view) show a cover element 5, which is an optical element. In the top view, the optical element 5 has a larger extent than the outer surface 21.

[0086] When the optical element 5 is attached to the optoelectronic semiconductor chip 2, it comes into contact with the adhesive 41. On a surface of the optical element 5 facing the optoelectronic semiconductor chip 2, the adhesive has a faster flow rate than on the outer surface 21. When the adhesive 41 reaches the barrier structure 3, capillary forces at the barrier structure 3 further influence the spread of the adhesive 41. This results in complete coverage of the outer surface 21 with the adhesive 41. However, the barrier structure 3 limits the spread of the medium 4 on the outer surface 21. Therefore, the side surfaces 24 of the optoelectronic semiconductor chip 2 remain free of the adhesive 41. In this way, the output coupling efficiency of the optoelectronic semiconductor chip 2 can be maintained.

[0087] The resulting component 1 is in the Fig. Figures 10A (cross-section) and 10B (top view) show the component 1. The component comprises the carrier 9, the optoelectronic semiconductor chip 2 with outer surface 21, the barrier structure 3, and the optical element 5. The optical element 5 is attached to the optoelectronic semiconductor chip 2 by adhesive 41. The spread of the adhesive 41 on the outer surface 21 is influenced by the barrier structure 3, which in this case has three barrier elements 31 made of GaN. The semiconductor layer sequence 22 of the optoelectronic semiconductor chip 2 also contains GaN. In the top view, the optical element 5 has a larger extent than the semiconductor layer sequence 22. The optical element 5 is, for example, a lens, a diffusing layer, or a phosphor layer.

[0088] Another embodiment of a method for manufacturing a component 1 is described in the Fig. shown on pages 11 to 13. The method and the resulting component 1 correspond to that shown in combination with the Fig. The method and component 1 described in sections 8 to 10. However, in this case, the barrier structure 3 is formed with only one barrier element 31. Furthermore, the barrier structure 3 is arranged on the support 9 such that it surrounds the semiconductor layer sequence 22. The barrier structure 3 surrounds the entire outer surface 21. For example, the barrier structure 31 is arranged next to a mesa of the semiconductor layer sequence 22. The component 1 resulting from the method, which is located in the Fig. As shown in Figures 13A (cross-section) and 13B (top view), the component has side surfaces 24 that are partially covered with the adhesive 41. However, the coverage is only partial, so the efficiency of the component 1 is still improved.

[0089] Another embodiment of a method for manufacturing a component 1 is described in the Fig. described in sections 14 to 16. The procedure largely corresponds to that described in the Fig. The methods described in sections 8 to 10 are similar. However, in this case, guide structures 7 are arranged on the outer surface 21 of the optoelectronic semiconductor chip 2. The guide structures 7 improve the spreading of the adhesive 41 on the outer surface 21. In this way, complete coverage of the outer surface 21 with the adhesive 41 is achieved more efficiently. The flow rate of the adhesive 41 is higher at the guide structures 7. As a result, the adhesive 41 spreads more efficiently and uniformly on the outer surface 21. The guide structures 7 are channels or walls on the outer surface 21. The ends of the guide structures 7 point towards the barrier structure 3. In this case, the ends of the guide structures 7 point towards the edges of the optoelectronic semiconductor chip 2. The guide structures 7 are manufactured using the same method as the barrier structure 3.Therefore, the guide structures 7 also feature the material of the semiconductor layer sequence, in particular GaN. It is possible that the guide structures 7, the barrier structure 3, and the output coupling structures 8 are formed simultaneously.

[0090] In the case that the guide structures are 7 walls, the height of the walls is less than the height of the barrier structure 3. This allows for efficient coverage of the outer surface 21 with the adhesive 41.

[0091] In Fig. Sections 17A to 17C show a further method for manufacturing a component 1 according to an exemplary embodiment. In a first step, shown in Fig. In section 17A, an electronic component 2, in this case an optoelectronic semiconductor chip, is provided. The optoelectronic semiconductor chip 2 has an outer surface 21, which is at least partially formed by a radiation emission surface 23 of the optoelectronic semiconductor chip 2. The optoelectronic semiconductor chip 2 has a semiconductor layer sequence 22 with an active layer. The active layer is capable of generating electromagnetic radiation, which is emitted through the radiation emission surface 23. The semiconductor layer sequence 22 comprises a semiconductor material, for example, GaN.

[0092] In a second step, which in Fig. As shown in Figure 17B, a barrier structure 3 is formed on the optoelectronic semiconductor chip 2. The barrier structure 3 has a barrier element 31 with a height and / or diameter between and including 0.1 micrometers and 10 micrometers. The barrier structure 3 is formed from the semiconductor layer sequence 22 by photolithography and plasma etching. Therefore, the barrier structure 3 comprises a material of the semiconductor layer sequence 22, in particular GaN. The barrier structure 3 completely surrounds the outer surface 21.

[0093] In a third step, which in Fig. As shown in Figure 17C, a medium 4 is applied to the outer surface 21. In this case, the medium 4 is a phosphor layer 42. The phosphor layer 42 comprises a matrix material 421 and a phosphor 422. The phosphor 422 is homogeneously distributed within the matrix material 421. The matrix material 421 is, for example, a polysiloxane. The phosphor 422 can be a nitride phosphor, a garnet phosphor, or a phosphor containing aluminum and / or silicon. The phosphor layer 42 is applied to the outer surface 21 by dispensing or jetting. The spread of the phosphor layer 42 is influenced by the barrier structure 3. The barrier structure 3 limits the spread of the phosphor layer 42. Thus, the side surfaces 24 of the optoelectronic semiconductor chip 2 remain free of the phosphor layer 42.

[0094] In component 1 of the Fig. 17C closes the barrier structure 3 flush with the side surfaces 24 of the optoelectronic semiconductor chip. The phosphor layer 42 is flush with the barrier element 3. However, it is also possible for the barrier structure 3 to be arranged at a distance from the side surfaces 24. The phosphor layer 42 can be configured such that a cavity formed by the outer surface 21 and the barrier structure 3 is only partially filled with the phosphor layer 42. In other words, the thickness of the phosphor layer 42 is less than the height of the barrier structure. The thickness of the phosphor layer 42 is its extent perpendicular to the outer surface 21.

[0095] Another method for manufacturing a component 1 is described in the Fig. Figures 18A to 18D show a barrier structure 3 formed on an electronic component 2 such that it surrounds an outer surface 21 of the electronic component 2, as shown in Fig. 18A shown. This process is similar to that associated with the Fig. 17A and Fig. The process described in 17B. However, the barrier structure 3 does not completely enclose the outer surface 21. The barrier structure 3 has a gap 31, as shown in the top view of Fig. 1C shown.

[0096] An evaporating material 12 is arranged on the outer surface 21 ( Fig. 18B). As with a medium 4, the spreading of the evaporating material 12 can be influenced by the barrier structure 3. The evaporating material 12 has a vapor pressure such that it can be easily removed from the outer surface 21. The evaporating material 12 contains, for example, water or consists of it.

[0097] Next, as in Fig. Figure 18C shows a cover element 5 arranged on the electronic component 2. The cover element 5 is in direct contact with the barrier structure 3 and covers the outer surface 21 of the electronic component 2. In plan view, the cover element 5 has the same size as the electronic component 2. The electronic component 2 is, for example, an optoelectronic semiconductor chip, and the cover element 5 is an optical element such as a lens, a phosphor layer, or a diffusing layer.

[0098] The evaporating material 12 is replaced by a medium 4. In this way, the following is obtained: Fig. Component 1 shown in 18D. During the replacement of the evaporating material 12, the evaporating material 12 is evaporated, for example at increased temperature and / or reduced pressure.

[0099] In the Fig. In the component 1 shown in Figure 18D, the medium 4 is a gas. This results in a refractive index change between the optoelectronic semiconductor chip 2, the medium 4, and the optical element 5, thus increasing the efficiency of the component 1.

[0100] Fig.Figure 19 discloses a further embodiment of the component 1. The component 1 comprises an electronic component 2, which in this case is an optoelectronic semiconductor chip. The optoelectronic semiconductor chip 2 has an outer surface 21. A barrier structure 3 is arranged on the outer surface 21. The barrier structure 3 surrounds the outer surface 21. The barrier structure 3 comprises a material of a semiconductor layer sequence 22 of the optoelectronic semiconductor chip 2. The semiconductor layer sequence 22 comprises GaN. The barrier structure 3 therefore comprises GaN. The barrier structure 3 comprises a barrier element 31, which comprises the material of the semiconductor layer sequence 22. The barrier structure 3 comprises a protective layer 35. The protective layer 35 comprises or consists of Si3N4 or SiO2. The protective layer 35 protects a material of the barrier element 31 from environmental influences.

[0101] A further protective layer 25 is arranged on the outer surface 21. The protective layer 25 also contains or consists of Si3N4 or SiO2. In this case, the protective layer 35 of the barrier structure 3 and the protective layer 35 on the outer surface 21 are formed as a single, continuous protective layer.

[0102] The features and embodiments described in connection with the figures can be combined with one another according to further embodiments, even if not all combinations are explicitly described. Furthermore, the embodiments described in connection with the figures may have alternative or additional features, as described in the general section.

[0103] The present patent application claims priority over German patent application 10 2023 128 345.6, the disclosure content of which is hereby incorporated by reference.

[0104] The invention is not limited to the exemplary embodiments described therein. Rather, the invention encompasses every new feature and every combination of features, including, in particular, every combination of features in the claims and every combination of features in the exemplary embodiments, even if that feature or combination of features is not explicitly stated in the claims or exemplary embodiments. Reference sign 1 component 2 optoelectronic semiconductor chip 21 outdoor area 22 Semiconductor layer sequence 23 Radiation emission surface 24 side surface 25 protective layer 3 Barrier structure 31 Barrier element 32 Inside 33 Outside 34 gap 35 Protective layer 4 Medium 41 Adhesive 42 Fluorescent layer 421 Matrix material 422 Fluorescent 5 Cover element 6 Adhesive 7 Management structure 8 coupling structures 9 carriers 10 Bondpad 11 Encapsulation 12 evaporating material QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] DE 10 2023 128 345.6

[0103]

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