REDUCED CONTACT RESISTANCE MEMS DEVICE
DE602020043361T2Active Publication Date: 2024-12-18QORVO US INC
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Patent Information
- Application Number
- DE602020043361
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2019-05-30
- Filing Date
- 2020-05-29
- Publication Date
- 2024-12-18
- Estimated Expiration
- 2040-05-29
AI Technical Summary
Technical Problem
MEMS devices with ruthenium contacts face challenges of high contact resistance and susceptibility to stiction, which affect their operational reliability.
Method used
The method involves etching back exposed ruthenium contacts with a chlorine etchant after removing sacrificial material, and optionally treating them with fluorine-based plasma to reduce contact resistance and stiction risk.
Benefits of technology
This approach achieves low contact resistance with reduced stiction susceptibility, improving the overall performance and reliability of MEMS devices by selectively etching ruthenium surfaces while maintaining low resistance.
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