Laser component

Abstract

The invention relates to a laser component comprising - a semiconductor laser chip (1) having a laser facet (1a) with an active zone (11), and - an optical element (2) which is mounted after the semiconductor laser chip (1) on the laser facet (1a), wherein - the semiconductor laser chip (1) and the optical element (2) are connected to each other by means of a welding connection (3) that is free from welding additives.

Description

[0001] LASER COMPONENT

[0002] A laser component is specified. Furthermore, a method for producing a laser component is specified.

[0003] One problem to be solved is, among other things, to provide a laser component that is particularly cost-effective. Another problem to be solved may, among other things, be to provide a laser component that is particularly resistant to aging. Another problem to be solved is, among other things, to provide a method for producing such a laser component.

[0004] A laser component is specified. During operation, the laser component generates electromagnetic radiation, in particular laser radiation. The laser component is configured to generate electromagnetic radiation with a wavelength that lies in the wavelength range between infrared radiation and UV radiation.

[0005] According to at least one embodiment of the laser component, the laser component comprises a semiconductor laser chip. The semiconductor laser chip can be, for example, an edge-emitting semiconductor laser chip or a surface-emitting semiconductor laser chip.

[0006] The semiconductor laser chip comprises, for example, a semiconductor body, reflective outer surfaces that form a resonator, and electrical connection points for contacting the semiconductor laser chip. The semiconductor laser chip comprises a laser facet. During operation, the laser radiation generated by the semiconductor laser chip exits at the laser facet of the semiconductor laser chip. The laser facet is formed, for example, by an outer surface of the semiconductor laser chip, for example, by a side surface or a top surface.

[0007] The laser facet comprises an active zone, which encompasses the area of ​​the laser facet where the electromagnetic radiation generated during operation leaves the semiconductor laser. For example, in the area of ​​the active zone, an active layer of the semiconductor laser chip borders a reflective layer of the semiconductor laser chip, which is part of the resonator of the semiconductor laser chip.

[0008] According to at least one embodiment of the laser component, the laser component comprises an optical element arranged downstream of the semiconductor laser chip at the laser facet. The optical element follows the laser facet of the semiconductor laser chip, in particular in a radiation direction of the semiconductor laser chip.

[0009] This makes it possible for all or at least a large part of the laser radiation leaving the semiconductor laser chip to pass through the optical element and be optically influenced by it.

[0010] The optical element is, for example, an optical element for beam shaping using optical refraction. For example, the optical element is then a lens for focusing the laser radiation. Alternatively or additionally, it is possible that the optical element is a diffractive optical element (also DOE), in which beam shaping is based on the principle of optical diffraction.

[0011] The optical element is formed from a material that is transparent to the laser radiation, such as a glass, a semiconductor material and / or a plastic material.

[0012] No other component of the laser component is arranged between the optical element and the laser facet. However, at least in some areas, a gap, filled with air, for example, may be located between the laser facet and the optical element.

[0013] According to at least one embodiment of the laser component, the semiconductor laser chip and the optical element are connected to one another by means of a welded joint. A welded joint is understood here and below to mean a mechanical connection that cannot be removed without destruction and is created under the influence of heat and / or pressure between two joining partners of the laser component.

[0014] The welded joint is, in particular, free of any welding consumables. This means that the welded joint is formed solely by the material of the joining partners, which are connected to each other by the weld. The joining partners are therefore directly connected to each other without any additional joining material such as a welding consumable or an adhesive.

[0015] According to at least one embodiment of the laser component, the laser component comprises a semiconductor laser chip with a laser facet comprising an active zone, and an optical component arranged downstream of the semiconductor laser chip on the laser facet. The semiconductor laser chip and the optical component are connected to one another by means of a weld joint that is free of welding additives.

[0016] The laser component is based on the following considerations, among others. In semiconductor laser components, which are operated in an open atmosphere, for example, a deposition of foreign matter on the laser facet is observed, which leads to degradation of the laser component, for example, through a decrease in light output. The deposition can be caused by dust or suspended matter in the ambient air.

[0017] The laser component described here is based on the idea that arranging the optical element particularly close to the laser facet reduces, inhibits, and / or prevents the deposition of foreign substances from the surrounding atmosphere. The use of a welded joint eliminates the need for connecting materials, which allows for particularly cost-effective production of the laser component. Furthermore, no other materials, such as connecting materials, need to be optimized with regard to their optical and / or thermal properties, which in turn allows for particularly simple and cost-effective production.

[0018] According to at least one embodiment of the laser component, the distance between the optical element and the laser facet is at most 10 pm, in particular at most 7 pm or at most 1 pm. Distances of 500 nm and less are also possible. In particular, the smallest distance between the optical element and the laser facet is in the region of the active zone. It has been shown that such small distances ensure that the deposition of foreign substances from the atmosphere on the laser facet is greatly reduced or prevented.

[0019] According to at least one embodiment of the laser component, the optical element and the semiconductor laser chip are in direct contact with each other at the laser facet. The direct contact between the two elements can be mediated, for example, by the welded joint. This means that in this case, the welded joint can be located between the optical element and the semiconductor laser chip, so that the welded joint mediates direct physical contact between these two components of the laser component.

[0020] According to at least one embodiment of the laser component, the laser component comprises a carrier. The remaining components of the laser component, in particular the semiconductor laser chip and the optical element, are attached to the carrier. The carrier then represents the mechanically supporting component of the laser component. The optical element is connected to the semiconductor laser chip by means of the carrier, and the welded joint is arranged between the optical element and the carrier.

[0021] A welded connection can then also be arranged between the optical element and the semiconductor laser chip, or these two components are not connected to each other by a direct weld. This means that it is also possible, in particular, for the optical element and the semiconductor laser chip to be connected to each other via the carrier as an intermediary, and for the welded connection to be arranged only between the optical element and the carrier.

[0022] The carrier may, for example, have a material suitable for the welded connection on its outer surface facing the optical element. For example, the carrier may comprise a layer formed from a metal oxide and / or a semiconductor oxide, such as silicon dioxide, a glass, and / or a glass ceramic, on its outer surface facing the optical element.

[0023] According to at least one embodiment of the laser component, the welded connection comprises a weld seam which runs in a connection region between the optical element and the carrier and which comprises the material of the optical element and the carrier.

[0024] According to at least one embodiment of the laser component, the welded joint is arranged between the optical element and the semiconductor laser chip. It is additionally possible for a welded joint to be arranged between the optical element and a carrier of the laser component. However, it is also possible for the welded joint between the optical element and the semiconductor laser chip to represent the only connection between these two components of the laser component. The welded joint provides direct physical contact between the optical element and the semiconductor laser chip.

[0025] The semiconductor laser chip can, for example, comprise a reflective layer comprising metal oxides and / or semiconductor oxides on the laser facet. The reflective layer then forms part of the resonator of the semiconductor laser chip. The welded joint can, in particular, be formed with material from the optical element and the reflective layer.

[0026] The reflective layer may, for example, comprise silicon dioxide and the optical element may be formed with glass or consist of glass, so that the weld joint may, for example, comprise silicon dioxide or consist of silicon dioxide.

[0027] According to at least one embodiment of the laser component, the welded connection comprises a weld seam. A weld seam connects components in a materially integral manner at a weld joint. A weld joint is understood to be the area in which the components are joined together. In particular, a weld seam is a welded connection along a connecting line or connecting curve. The components are only materially connected along the connecting line or connecting curve. In other words, a weld seam is spatially limited to an area of ​​the components in which the components are connected to one another. The weld seam does not connect the components over their entire mutually facing surface, in particular not across their entire area.

[0028] According to at least one embodiment of the laser component, the welded joint comprises a weld seam between the optical element and the semiconductor laser chip. In particular, the weld seam between the optical element and the semiconductor laser chip is the only connection between these two components of the laser component. In particular, the connection between the optical element and the semiconductor chip is free of additional connecting material. The weld seam provides direct physical contact between the optical element and the semiconductor laser chip.

[0029] According to at least one embodiment, the weld seam does not connect the optical element and the semiconductor laser chip over a wide area. In other words, the weld seam is arranged in a spatially limited region between the optical element and the semiconductor laser chip, for example, along a line or curve.

[0030] According to at least one embodiment of the laser component, the welded connection comprises a weld seam which runs in a connection region between the optical element and the semiconductor laser chip and which comprises material of the optical element and the semiconductor laser chip. The weld seam runs, for example, along a curve, such that a planar connection between the optical element and the semiconductor laser chip is produced by the welded connection. The weld seam can, for example, comprise a plurality of concentrically running curves and / or meandering curves which are arranged, for example, in a zigzag pattern between the optical element and the semiconductor laser chip. In this way, it is possible to produce the most planar connection possible between these two components.

[0031] It is possible for the welded joint to be arranged at a distance from the active zone and, for example, to run only along one side of the active zone. According to at least one embodiment of the laser component, the weld seam laterally encloses the active zone. In this case, the weld seam is guided laterally around the active zone in the plane of the connection region between the optical element and the semiconductor laser chip.

[0032] In this case, it is possible to hermetically seal the active zone via the weld seam, which laterally encloses the active zone, so that the active zone is laterally enclosed by the weld seam, the optical element, and the semiconductor laser chip. This ensures that no foreign matter can accumulate in the area of ​​the active zone.

[0033] According to at least one embodiment of the laser component, the laser component is free of a hermetically sealed housing. This means that the laser component can, for example, comprise a housing that is not hermetically sealed, or the laser component is free of any housing and the components of the laser component are arranged together, for example, on a carrier of the laser component.

[0034] The omission of a hermetically sealed housing is possible in particular due to the arrangement of the optical element at a short distance from the laser facet and allows the production of particularly compact and cost-effective laser components.

[0035] Furthermore, a method for producing a laser component is specified. In particular, a laser component described here can be produced by means of the method. This means that all features disclosed for the laser component are also disclosed for the method, and vice versa.

[0036] According to at least one embodiment of the method, a semiconductor laser chip having a laser facet comprising an active zone is first provided.

[0037] According to at least one embodiment of the method, an optical element is provided. The optical element is arranged on the laser facet.

[0038] According to at least one embodiment of the method, in a further method step, the semiconductor laser chip and the optical element are connected in a connection region by means of a welding process, wherein the welding process is carried out without additives.

[0039] According to at least one embodiment of the method, the method comprises the following steps:

[0040] - Providing a semiconductor laser chip with a laser facet comprising an active zone,

[0041] - Providing an optical element,

[0042] - Arranging the optical element on the laser facet,

[0043] - connecting the semiconductor laser chip and the optical element in a connecting region by means of a welding process, wherein the welding process is carried out without welding filler materials.

[0044] The semiconductor laser chip and the optical element can be connected to one another directly at an interface between the semiconductor laser chip and the optical element by means of the welding process. Alternatively or additionally, it is possible for the optical element to be connected by means of a welding process in a connection region between the optical element and a carrier, and for the semiconductor laser chip and the optical element to be indirectly connected to one another via the carrier after being connected to the carrier.

[0045] According to at least one embodiment of the method, connecting the semiconductor laser chip and the optical element in a connecting region by means of a welding process comprises creating a weld seam. In particular, the weld seam between the optical element and the semiconductor laser chip is the only connection between these two components of the laser component. In particular, the connection between the optical element and the semiconductor chip is free of additional connecting material.

[0046] According to at least one embodiment of the method, the weld seam is not created over a large area between the optical element and the semiconductor laser chip. In particular, the weld seam is created in a spatially limited region between the optical element and the semiconductor laser chip, for example, along a line or curve.

[0047] According to at least one embodiment of the method, the welding process is carried out using a laser beam focused in the joining region. For this purpose, a laser beam is guided, for example, through the optical element and focused at the interface between the components to be joined. This creates a region of high power density at the interface in which the joining partners melt locally. The laser beam is then moved, for example, along a curve, creating a weld seam formed from the materials of the joining partners.

[0048] For example, a welding process such as that offered by Primoceler for joining glass can be used. However, alternative laser welding processes are also possible. When attaching the optical element to a substrate using a welded connection, it is also possible, with a suitable substrate material, to focus the laser through the substrate onto the interface between the laser and the optical element.

[0049] In the following, the laser component described here and the method described here are explained in more detail using exemplary embodiments and the associated figures.

[0050] A first embodiment of a method described here and a first embodiment of a laser component described here are explained in more detail with reference to the schematic representations in Figures 1A and 1B.

[0051] A second embodiment of a method described here and a second embodiment of a laser component described here are explained in more detail with reference to the schematic representations in Figures 2A and 2B.

[0052] A third exemplary embodiment of a method described here and a third exemplary embodiment of a laser component described here are explained in more detail with reference to the schematic representation in Figure 3. Identical, similar, or similarly acting elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements shown in the figures are not to scale. Rather, individual elements may be exaggerated for clarity and / or comprehensibility.

[0053] In conjunction with the schematic sectional view of Figure 1A, a first embodiment of a method described here is explained in more detail.

[0054] In the method, a semiconductor laser chip 1 is first provided. The semiconductor laser chip 1 is, for example, an edge-emitting or a surface-emitting semiconductor laser chip. The semiconductor laser chip comprises a laser facet 1a, through which the laser radiation generated in the semiconductor laser chip 1 leaves the semiconductor laser chip during operation.

[0055] A reflective layer 12 is formed on the laser facet 1a. The reflective layer 12 forms part of the resonator of the semiconductor laser chip 1. The reflective layer 12 comprises, for example, metal oxides and / or semiconductor oxides, in particular alternating layers with different refractive indices.

[0056] For example, the outermost layer of the reflective layer may be formed with a material such as silicon dioxide.

[0057] An optical element 2 is also provided. The optical element 2 can be used to shape the beam of the laser radiation, which can be achieved, for example, by refraction and / or diffraction. In the exemplary embodiment of Figure 1A, the optical element 2 is formed, for example, with glass.

[0058] The optical element 2 is arranged as close as possible to the laser facet 1a, so that a distance d between the laser facet and the optical element 2 is at most 10 pm, in particular at most 7 pm.

[0059] Furthermore, a laser 5 is provided which generates laser radiation 7. The laser radiation 7 is focused, for example, via an optics 6 onto the interface between the optical element 2 and the semiconductor laser chip 1, so that a weld 3 is formed in the first connection region 41 after the molten material has solidified.

[0060] The schematic view of Figure 1B shows a plan view through the optical element onto the first connection region 41 between the optical element 2 and the semiconductor laser chip 1. As can be seen from Figure 1B, the welded connection 3 is formed along a weld seam 31 which runs as a meandering curve in order to create a connection region 41 with a particularly large area. In the exemplary embodiment of Figures 1A and 1B, the weld seam 31 runs above the active zone 11, which is arranged at the lower end of the laser facet 1a.

[0061] The result is a laser component comprising the semiconductor laser chip 1 with a laser facet 1a, which comprises the active zone 11. The optical element 2 is arranged downstream of the laser facet 1a in the semiconductor laser chip 1, and the semiconductor laser chip and the optical element 2 are connected to one another by means of the weld 3, which is free of welding additives. The weld 3 enables a direct physical

[0062] Contact between the semiconductor laser chip 1 and the optical element is mediated.

[0063] The welded joint 3 comprises a weld seam 31, which runs in the first connection region 41 between the optical element 2 and the semiconductor laser chip 1 and comprises material from both components. The semiconductor laser chip 1 comprises the reflective layer 12 at the laser facet 1a, the material of which forms the welded joint 3 with the material of the optical element.

[0064] The laser component remains free of a hermetically sealed housing and comprises at most one housing 9 which is not hermetically sealed.

[0065] In conjunction with the schematic representations of Figures 2A and 2B, further embodiments of a method described here and of a laser component described here are described.

[0066] In contrast to the method and laser component of Figures 1A and 1B, here the active zone 11 is laterally enclosed by at least one weld seam 31. This means that, for example, in a plane of the first connecting region 41, the active zone 11 is laterally bordered by at least one weld seam 31.

[0067] In the exemplary embodiment of Figures 2A and 2B, the active zone 11 is enclosed by two weld seams 31, which together form the welded joint 3. The weld seams 31 run concentrically to one another. In this way, a particularly mechanically stable connection can be achieved between the optical element 2 and the semiconductor laser chip 1.

[0068] By enclosing the active zone 1 with the weld seams 31, the laser facet in the area of ​​the active zone 11 is particularly well protected against contamination.

[0069] In conjunction with the schematic representation of Figure 3, a third exemplary embodiment of a method described here and of a laser component described here is described. In this exemplary embodiment, the welded connection comprises a weld seam 31, which runs in a second connection region 42 between the optical element 2 and the carrier 8 and which forms the material of the optical element

[0070] 2 and the carrier 8. The carrier 8 can, for example, comprise a layer formed from a glass or a glass ceramic on its upper side facing the optical element 2.

[0071] In this exemplary embodiment, it is additionally possible for a further welded connection 3 to be formed between the optical element 2 and the semiconductor laser chip 1, as described in connection with the exemplary embodiments of Figures 1A, 1B, 2A and 2B. Furthermore, in this exemplary embodiment, it is possible for the distance d between the optical element 2 and the semiconductor laser 12 to be selected to be somewhat larger than is the case for an exemplary embodiment in which the optical element and the semiconductor laser chip

[0072] 3 are directly connected to one another by a welded joint arranged between them. This allows higher tolerances when arranging the optical element 2 on the semiconductor laser chip 1. Overall, the close or direct arrangement of the optical element 2 on the laser facet 1a isolates the laser facet from the ambient air, which may contain harmful molecules. This prevents the deposition of foreign substances on the laser facet and hermetic encapsulation of the laser component is no longer necessary. This allows particularly cost-effective production of a laser component that can be characterized by high aging stability.

[0073] The invention is not limited to the embodiments described herein. Rather, the invention encompasses any novel feature and any combination of features, including, in particular, any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the claims or embodiments.

[0074] This patent application claims priority from German patent application DE 10 2022 103 260 . 4 , the disclosure of which is hereby incorporated by reference.

[0075] Reference symbol list

[0076] 1 semiconductor laser chip la laser facet 11 active zone

[0077] 12 reflective layer

[0078] 2 optical element

[0079] 3 Welded joint

[0080] 31 Weld seam 41 first connection area

[0081] 42 second connection area

[0082] 5 lasers

[0083] 6 Optics

[0084] 7 Laser beam 8 Carrier

[0085] 9 Housing d distance

Claims

Patent claims 1. Laser component comprising - a semiconductor laser chip (1) with a laser facet (1a) comprising an active zone (11), and - an optical element (2) which is arranged downstream of the semiconductor laser chip (1) at the laser facet (1a), wherein - the semiconductor laser chip (1) and the optical element (2) are connected to each other by means of a weld connection (3) which is free of welding additives, wherein the weld connection (3) comprises a weld seam (31).

2. Laser component according to the previous claim, wherein the distance between the optical element (2) and the laser facet (1a) is at most 10 pm.

3. Laser device according to one of the preceding claims, wherein the optical element (2) and the semiconductor laser chip (1) at the laser facet (a) are in direct contact with each other .

4. Laser component according to one of the preceding claims with a carrier (8) , wherein the semiconductor laser chip (1) and the optical element (2) are connected to each other by means of the carrier (8) and the weld connection (3) is arranged between the optical element (2) and the carrier (8).

5. Laser component according to the previous claim, wherein the weld connection (3) comprises a weld seam (31) which runs in a second connection area (42) between optical element (2) and the carrier (8). and the material of the optical element (2) and the support (8) includes.

6. Laser component according to one of the preceding claims, wherein the weld connection (3) is arranged between the optical element (2) and the semiconductor laser chip (1).

7. Laser component according to one of the preceding claims, wherein the weld seam (31) runs in a first connection area (41) between optical element (2) and semiconductor laser chip (1) and comprises the material of the optical element (2) and the semiconductor laser chip (1).

8. Laser component according to the previous claim, wherein the weld seam (31) laterally surrounds the active zone (11).

9. Laser component according to one of the preceding claims, which is free from a hermetically sealed housing.

10. Laser device according to one of the preceding claims, wherein the semiconductor laser chip (1) comprises a reflective layer (12) at the laser facet (1a) comprising metal oxides and / or semiconductor oxides.

11. Method for manufacturing a laser component comprising the following steps: - Providing a semiconductor laser chip (1) with a laser facet (1a) comprising an active zone (11), - Providing an optical element (2) , - Arranging the optical element (2) at the laser facet da) , - Connecting the semiconductor laser chip (1) and the optical element (2) in a connection area (41, 42) by means of a welding process, wherein the welding process is carried out without welding additives, wherein the connecting of the semiconductor laser chip (1) and the optical element (2) in a connection area (41, 42) by means of a welding process includes the creation of a weld seam (31).

12. Method according to the previous claim, wherein the welding process is carried out by means of a laser beam (7) which is focused in the joining area (41, 42).

13. Method according to the previous claim, wherein material in the connection area (41, 42) is melted, which after solidification forms a welded joint (3).

14. Method according to one of the three preceding claims, wherein a laser component is produced according to at least one of claims 1 to 10.

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