Transfer stamp and method for generating a transfer stamp

Abstract

The invention relates to a transfer stamp for transferring an optoelectronic component which comprises a stamp body (10) that has a height and a stamp surface (11) with an edge length, wherein a ratio of the height to the edge length is greater than 1.3 and more particularly greater than 2. A stabilising layer (101) made of a material different from that of the stamp body (10) is applied to the sides of the stamp body, wherein the stamp surface (11) remains free from the material, and the material of the stabilising layer has a higher rigidity than a material of the stamp body.

Description

[0001] TRANSFER STAMP AND METHOD FOR PRODUCING A TRANSFER STAMP

[0002] This application claims priority from German patent application No. 10 2022 122 478 . 3 of September 5, 2022, the disclosure of which is hereby incorporated by reference into this application.

[0003] The present invention relates to a transfer stamp for transferring semiconductor components and a method for producing such a transfer stamp.

[0004] BACKGROUND

[0005] During the parallel transfer of small (<20 μm) semiconductor components using a stamping process (e.g., with a structured silicone mat), the mechanical properties of the stamping elastomer cause various problems when removing and depositing the components. Firstly, the stamp itself is designed with a certain degree of stickiness, and this strength must be carefully selected.

[0006] Current transfer stamps consist of a material, usually PDMS or silicone, with a specific hardness and stickiness. The stickiness and hardness can now be varied by using different material mixtures. However, the stickiness and hardness of PDMS cannot be completely independently modified.

[0007] When semiconductor components are placed on the surface, they are often removed using a certain shear force, i.e. not just a force acting perpendicular to the surface. The same applies, at least in part, to the picking process, although this can also take place without the use of shear forces. This means that certain dimensional tolerances and shapes are necessary for the stamp pad in order to be able to place semiconductor components as closely as possible. One problem in general is the hardness or stiffness of an elastomer-based stamp. Although greater stiffness enables higher tolerances when transferring semiconductor components, particularly those with an edge length of less than 10 pm or even less than 5 pm, the shearing movement when the components are placed down results in restrictive limit ranges for the dimensions of stamps in practice.

[0008] It has been found that for the stamp materials used to date, primarily elastomer-based processes, the stamps have a height-to-edge ratio of approximately 1, but in particular, they cannot be made any larger, as otherwise the bending would be excessive. Furthermore, only low deposition forces can be achieved in this way.

[0009] When transferring a large number of components at the same time, a certain minimum distance between two adjacent stamps results due to the required mechanical stability.

[0010] There is therefore a need to provide a transfer stamp which overcomes at least some of the difficulties mentioned above, so that a simultaneous transfer of a larger number of components becomes possible.

[0011] SUMMARY OF THE INVENTION

[0012] This need is met by the subject matter of the independent patent claims. Further developments and embodiments of the proposed principle are specified in the subclaims.

[0013] The inventor proposes using an additional layer on the side surfaces of the actual stamp to mechanically stabilize it, particularly against further shear forces. The contact area required for transfer, in contrast, remains unchanged. This advantageously achieves various effects. Firstly, it allows the use of different interconnect materials, including those that require increased deposition forces. The additional stabilization also makes it possible to change the ratio of stamp height to edge length in favor of the height. Put simply, the stabilization makes longer stamps possible. Accordingly, the density of the transfer stamps can be increased according to the proposed principle, so that more components can be transferred simultaneously.

[0014] The proposed principle allows components with a size between 1 pm and 5 pm to be transferred without the need for complex optimization of machine accuracy. Additional substrates or panels can be used that were previously unavailable due to tight height tolerances.

[0015] In some aspects, a transfer stamp for transferring an optoelectronic component comprises one or more stamp bodies which have a height and a stamp surface with an edge length, wherein a ratio of the height to the edge length is greater than 1.2 and in particular greater than 2. The stamp is thus significantly longer than its corresponding edge length, and the ratio can therefore be between 1.5 and 5. In some aspects, it is greater than 2 and lies between 2.5 and 4.5.

[0016] According to the proposed principle, a stabilizing layer made of a material different from that of the stamp bodies is applied to the sides of the stamp bodies, whereby the stamp surfaces remain essentially free of the material. The material of the stabilizing layer has a greater rigidity than a material of the stamp bodies. In this context, a material different from the stamp body is understood to mean a material which is either fundamentally different from the material of the stamp body, but also a material which is produced from the material of the stamp body by chemical or physical reaction (e.g. temperature or pressure or plasma treatment).

[0017] The proposed principle thus creates a transfer stamp in which the shearing movement reduces the adhesive force between the stamp and the component to be transferred, thus enabling the components to be deposited reliably on the receiving surface. In addition to a higher transfer yield, shorter process times are achieved. Furthermore, additional degrees of freedom or a larger process parameter space are possible for different receiving surfaces. It was also surprisingly found that the stickiness along the side surfaces is drastically reduced due to the stabilizing layer. In the event of slight misalignment, this leads to significantly reduced tilting of the components to be transferred, thus increasing the deposit tolerances and the yield. In some aspects, the transfer stamp according to the proposed principle comprises a support body which adjoins the stamp body in the longitudinal direction.In some aspects, this can merge into a wider base and serves, among other things, to improve stability. The support body has a surface on which the stamp body is arranged, particularly centrally. The surface can be larger than the stamp area.

[0018] In the following description, reference is often made to only one stamp body and support body, but it should be understood that this also applies equally to several stamp bodies and several support bodies.

[0019] In some aspects, the support body comprises a different material than the stamp body. In this context, a material that has greater rigidity than the material of the stamp body can be used for the support body. The support body can be designed to be transparent in order to be able to check the transfer or the result of the transfer process from the support body.

[0020] In some aspects, the support body is at least partially covered, particularly on the side surfaces, with the material of the stabilizing layer. This allows for simplified production and allows for the integration of additional functionalities.

[0021] The material of the stamp body can be a plastic that is softer than the stabilizing material. Possible materials are based on PDMS, for example. Various components can be used as the material of the stabilizing layer. A coating of SiO2 or graphite has proven to be useful, among others. In some other aspects, a metal can also be used, applied as a thin layer to the side surfaces, for example by electroplating or vapor deposition. Metals are conductive, which may enable additional functionalities. Suitable metals include Ag, Au, Ni, Ti or Pt. Compositions such as TiN are also possible. In some other aspects, the material of the side surfaces of the stamp can be (pre-)treated with a plasma, so that the surface is chemically / physically modified.In some aspects, glazing or even oxidation of the surface of the side faces can occur.

[0022] One aspect deals with the thickness of the stabilizing layer. The layer should be sufficiently thick to generate the necessary mechanical stiffness against shear forces. It has been found that the thickness should increase proportionally with smaller edge lengths in order to ensure the necessary stiffness. In some aspects it is therefore proposed that the thickness of the stabilizing layer is in the range between 1 / 1000 and 1 / 50, in particular between 1 / 800 and 1 / 100 and in particular 1 / 700 and 1 / 200 of an edge length of the stamping surface. In other words, the thickness of the stabilizing layer depends on the edge length of the stamping surface. For edge lengths of less than 10 pm, in some aspects the thickness of the layer is in the range of a few 10 nm, i.e. for example between 20 nm and 90 nm.In some aspects, the thickness is thus between 5 nm and 100 nm, in particular between 10 nm and 75 nm, and in particular between 20 nm and 50 nm.

[0023] In addition, the material of the stabilizing layer can influence the necessary thickness. For example, SiO2 can generally have a smaller thickness than layers made of metal. In some aspects, a stamp surface has an edge length in the range between 2 pm and 50 pm. In particular, this can be between 2 pm and 30 pm and in particular less than 10 pm. For example, with an edge length of 10 pm, the length of the stamp is in the range from 13 pm to 50 pm, in particular between 12 pm and 25 pm. One aspect deals with the area close to the stamp surface. This stamp surface itself basically remains free of the material of the stabilizing layer and therefore has a defined adhesiveness. As a result, components adhere primarily to the stamp surface but no longer along the side surfaces as in conventional transfer stamps, so that tilting during placement due to deflection tolerances is reduced.

[0024] A further aspect is the applied deposition force, which in some aspects leads to a slight compression of the stamp perpendicular to the stamp surface. In order to ensure contact between the stamp surface and the component to be transferred even in the event of slight compression or a thermal change in length, it can be provided in some aspects that a small end region along the side edges to the stamp surface remains free of the material of the stabilizing layer. In other words, the stabilizing layer is slightly set back from the stamp surface. This free region can be between 1 nm and 30 nm starting from the stamp surface and in particular in a range between 2 nm and 10 nm on the side surfaces.

[0025] Some aspects deal with the shape of the stamp body. For example, the stamp body can be shaped like a cuboid, with the height forming the longest edge of the cuboid. Alternatively, the sides of the stamp body can taper toward the stamp surface. In some aspects, the stamp body thus forms a truncated pyramid. In other aspects, the stamp body forms a truncated cone.

[0026] Further aspects deal with a method for producing a transfer stamp or a plurality of such stamps. In the proposed method, a support body with a stamp body is provided. The stamp body has a height and a stamp surface with an edge length, wherein a ratio of the height to the edge length is greater than 1.3 and in particular greater than 2. The method also comprises producing a stabilizing layer, at least on side surfaces of the stamp body, wherein the stamp surface remains free of the stabilizing layer and a material of the stabilizing layer has a greater rigidity than a material of the stamp body.

[0027] Depending on the configuration and any design requirements, the stabilizing layer can be created by covering the stamp surface, e.g. with a plate, a dummy semiconductor body or similar. The cover should be at least as large as the stamp surface in order to cover it completely. In some aspects, the cover can also be larger and thus protrude beyond the stamp surface. A metal, in particular Ag, Au, PT, Ni or Ti, can then be applied to at least the side surfaces of the stamp body. Graphite can also be applied to the side surfaces of the stamp body. This can be done, for example, by galvanic deposition, vapor deposition, sputtering or by deposition.

[0028] In some aspects, the side surfaces can be treated with plasma. Depending on the material of the stamp body, this can trigger physical or chemical reactions, which in turn lead to a stabilizing layer with increased rigidity. In some aspects, the surface can be hardened, thus forming the stabilizing layer. Glazing is also possible, i.e., applying or creating a glass on the surface. In some aspects, this is SiO2.

[0029] Depending on the design, the cover applied to the stamping surface effects shading. In this way, the stabilising layer is not produced right up to the edge of the stamping surface, but areas of the side surfaces of the stamping body adjacent to the stamping surface remain free of the material of the stabilising layer. These areas remaining free of material at the upper edge can have a height of 1 nm to 30 nm and in particular between 2 nm and 10 nm, starting from the upper edge in the direction of the supporting body. In some aspects, the step of providing a supporting body with a stamping body comprises providing the supporting body with a setting surface, providing a stamping body with a stamping surface and attaching the stamping body to the supporting body. The supporting body and stamping body can be made from the same or from different materials.In particular, the support body can be made of a stiffer material than the stamp body. Alternatively, they can also be made from a single piece.

[0030] An adhesive can be used to attach the stamp body to the support body. It is also possible to activate the surfaces to be joined, for example, through plasma treatment. The stamp body can then be placed onto the activated deposition surface. In some aspects, the surfaces are brought together by bringing the deposition surface of the support body into contact with a flat material reservoir and then moving them away from each other again.

[0031] In this way, a material forming the stamp body is torn out or removed from a material reservoir. Predetermined breaking points can be provided for this purpose in order to simplify this process. It is expedient if the stamp material is softer or more elastic than the material of the support body. In some aspects, an additional release layer can also be provided between the material reservoir and a temporary carrier so that the stamp material releases from the reservoir in a desired shape. For this purpose, it is also possible to structure the temporary carrier and then prepare it with the material reservoir. In this way, a material of the stamp body can be provided on a temporary carrier in depressions provided for this purpose. A release layer can be provided to facilitate removal.

[0032] In some aspects, the stamp body is provided on a temporary support whose adhesive force to the stamp body is less than the adhesive force between the surface of the support body and the stamp body. This allows the support body and stamp body to be manufactured separately and subsequently bonded together. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Further aspects and embodiments according to the proposed principle will become apparent with reference to the various embodiments and examples which will be described in detail in conjunction with the accompanying drawings.

[0034] Figure 1 shows a perspective view of a transfer stamp with some aspects according to the proposed principle;

[0035] Figures 2A to 2C illustrate various process steps for producing a transfer stamp according to some aspects of the proposed principle;

[0036] Figures 3A to 3D show a further embodiment of a method for producing a transfer stamp according to some aspects of the proposed principle;

[0037] Figures 4A to 4C illustrate a further embodiment of a method for producing a transfer stamp according to some aspects of the proposed principle.

[0038] Figures 5A and 5B show steps of a further embodiment of a method for producing a transfer stamp according to some aspects of the proposed principle.

[0039] DETAILED DESCRIPTION

[0040] The following embodiments and examples show various aspects and their combinations according to the proposed principle. The embodiments and examples are not always true to scale. Likewise, various elements can be shown enlarged or reduced in size to emphasize individual aspects. It goes without saying that the individual aspects and features of the embodiments and examples shown in the figures can be easily combined with one another without thereby impairing the inventive principle. Some aspects have a regular structure or shape. It should be noted that in practice slight deviations from the ideal shape can occur without, however, contradicting the inventive idea.

[0041] Furthermore, the individual figures, features, and aspects are not necessarily shown in the correct size, and the proportions between the individual elements may not always be correct. Some aspects and features are emphasized by being shown enlarged. However, terms such as "top", "above", "below", "below", "larger", "smaller", and the like are correctly represented with reference to the elements in the figures. This makes it possible to infer such relationships between the elements from the illustrations.

[0042] Figure 1 shows an embodiment of a transfer stamp according to the proposed principle. The transfer stamp is applied to an elastomeric carrier 13 and essentially comprises, in addition to the base body 13, a support body 12 and a stamp body 10 arranged on the support body. In this present embodiment, the support body 12 is square with a height H and a surface length L. The length L and height H are selected such that the support body 12 is mounted at a sufficiently great distance from adjacent support bodies 12 so that during a transfer of components and in particular a shearing movement required for this purpose, the support bodies 12 do not interact with the semiconductor components to be transferred.

[0043] A stamp body 10 is arranged centrally on the surface 120 of the support body 12. This also has a square base area which forms the stamp surface 11 on the upper side. The material of the stamp body 10 is PDMS, although another plastic is also suitable. If necessary, the elastomeric material PDMS can also contain additives which change the elasticity or the rigidity. The edge length 1 of the stamp surface 11 is smaller than the height h of the stamp body 10, so that a ratio of h to the edge length 1 is greater than 1 (h / 1 > 1) and is for example in the range from 1.5 to 2.5 as shown here. The actual stamp surface which interacts with the semiconductor component to be transferred and which for this purpose has a surface which is slightly sticky with regard to the material of the semiconductor component is located on the upper side of the stamp body 10.

[0044] According to the proposed principle, the side surfaces of the stamp body 10 are covered with a stabilizing layer 101. This layer is applied to the side surfaces of the stamp body 10 and has a rigidity that is greater than the rigidity of the elastomeric material of the stamp body 10. The stabilizing layer 101 is applied to the side surfaces of the stamp body 10, in particular, in the form of a thin coating.

[0045] In other words, the stabilizing material applied to the side surfaces of the stamp body 10 is less elastic and prevents or reduces bending of the stamp body 10 during a shearing movement during the deposition or removal process of the semiconductor bodies.

[0046] In this way, the height h of the stamp body 10 can be increased without the shear forces occurring during the removal or deposit of the semiconductor bodies leading to damage to the stamp body, or neighboring transfer stamps hindering one another. The greater height h also ensures a greater distance between the semiconductor components and the support body 12 during the removal process, so that misalignment of the stamp bodies has a smaller impact during the transfer process. In particular, the greater height h of the stamp body 10 ensures that the support body 12 does not inadvertently interact with the semiconductor component.

[0047] The material 101 on the side surfaces of the support body can also extend to the surface 120 as well as the side surface of the support body 12 and the surface of the base 13. In exemplary embodiments, this material can be vapor-deposited, sputtered, or otherwise applied to the surface of the transfer stamp shown in Figure 1 during the manufacture of this stamp. The thickness of the applied material 101 is selected such that sufficient rigidity is achieved depending on the material of the stamp body 10.

[0048] The thickness required for this depends on the material of the stamp body 10 and its mechanical or elastic properties, but also on the properties of the applied material itself. Examples of such materials would be silicon dioxide SiO2, which is applied in the form of a glazing as material 101 on the side surfaces. The thickness of silicon dioxide SiO2 is in the range of a few nanometers to a few 10 nm. Alternative materials for application with increased rigidity compared to the material of the stamp body 10 would also be graphite or various metals. The latter also have the advantage of being electrically conductive, so that unintentional electrostatic charging during transfer can be avoided. Possible materials for metals are, for example, silver, gold, platinum, but also titanium or nickel.

[0049] Figures 2A to 2C show various process steps for the production of transfer stamps 1 according to the proposed principle.

[0050] In Figure 2A, the material of the transfer stamp is applied to a transparent, solid base 130 and already structured accordingly. Each transfer stamp 1 comprises a support body 12 and a stamp body 10 arranged on the support body. The support body 12, stamp body 10, and also the base material 13 are made from a single piece and comprise an elastic plastic, for example PDMS Sylgard 184®. This material has a slight stickiness to the semiconductor materials to be transferred, so that the semiconductor components adhere well to the stamp pad upon contact with the stamp surface 11 and can be removed from it by a carrier.

[0051] As shown in Figure 2A, the height h of the stamp body 10 is significantly greater than the corresponding edge length l of the stamp surface 11. The ratio of height h to edge length is in the range 2 to 3 in this exemplary embodiment. A cover 25, for example a plate made of semiconductor material, is now applied to the stamp surface 11 to protect the stamp surface from the further process steps, so that the exposed stamp surface 11 is completely covered. Then, as shown in Figure 2B, the side surfaces of the stamp body 10 and also of the support body 12 and the surface of the base 13 are covered with a stabilizing material 101. The stabilizing layer 101 is applied in particular in the form of a thin coating to the side surfaces of the stamp body 10, so that the area between the stamp bodies 10 and support bodies remains free of the stabilizing material 101.Accordingly, the stabilizing material 101 does not fill the spaces between the stamp bodies, but merely covers the side surfaces of the stamp bodies 10.

[0052] As already mentioned, this material has a higher rigidity than the plastic used for the stamp body 10. The thickness of the applied material is in the range of approximately 20 nm to 100 nm and depends, among other things, on the edge length 1 of the stamp surface. In general, with larger ratios of h / 1, the thickness of the material of the stabilizing layer should also increase. The protection applied to the stamp surface 11 prevents the stabilizing material 101 from being deposited on the stamp surface. The cover on the stamp surface 11 in Figure 2C is then removed again, so that the stamp surface is now exposed.

[0053] During the deposition of the material 101 on the side surfaces, the protection 25 applied to the stamping surface 11 can, in some aspects, protrude slightly beyond the edge of the stamping surface. This is expedient, on the one hand, in order to reduce any possible misalignment, i.e. the effect of a slightly offset application of the cover 25 to the surface 11 or slipping during the process. On the other hand, a projecting region of the cover 25 creates a shadow along the end regions of the side surfaces, i.e. the regions adjacent to the stamping surface. As a result, less stabilizing material or even no stabilizing material is applied in this region, so that an edge or a marginal region of the side surfaces close to the stamping surface 11 remains free of the stabilizing material.Put simply, the height h of the stamp body exceeds the height of the stabilizing side surfaces by a slight amount in the range of a few nanometers to a few 10 nm. Or the stabilizing material is slightly recessed by this amount. This has the advantage that a slight compression of the stamp surface when the stamp surface is pressed against the semiconductor components does not lead to contact between the stabilizing side surfaces and the semiconductor component. This makes it possible to increase the adhesive force of the stamp surface 11 on the semiconductor components without the stabilizing side surfaces coming into contact with the semiconductor component and possibly damaging it. The finished embodiment of a transfer stamp shown in Figure 2C can be used for multiple transfers of elements.

[0054] Figures 3A to 3D show a further exemplary embodiment for the production of transfer stamps according to the proposed principle. In this embodiment, a stamp body is provided with the base 13 and support bodies 12' applied thereon. The support body 12' and the base 13 comprise a material which has a significantly higher hardness and rigidity than the later material of the stamp body 10. In a next step, shown in Figure 3B, the surface 120 of the support body 12' is subjected to a plasma process so that the surface is activated. The activation of the surface creates free bonds which enable particularly good adhesion of a second, significantly softer layer 100 which is fastened to a temporary carrier 20 as a material reservoir.

[0055] As shown in the embodiment of Figure 3B, the plasma-activated surface 120' is now arranged facing the surface of the material 100 and pressed firmly onto it. In addition, the surface of the softer material reservoir for the stamp body 100 can also be activated using a corresponding plasma process. After the surface 120' has been pressed onto the surface of the reservoir 100, these adhere to one another and the plasma-activated surface(s) stick together. The support bodies 12' are then removed again so that part of the material of the stamp body 100 is detached and a structure 10' forming a truncated pyramid remains as a stamp body on the surface of the support body 12'. The truncated pyramid-shaped structure 10' is connected relatively firmly to the support body 12' and can be provided for the later transfer of components by means of further processes.

[0056] Depending on the process design, a truncated cone-shaped structure can also be formed here.

[0057] In a subsequent step, the stamping surfaces of the structures 10' are again covered with a cover as protection and then the stabilizing material 101 is applied to the side surfaces of the stamping bodies 10' and the supporting bodies 12'. The resulting structure is then shown in Figure 3D. The stabilizing layer 101 is applied in particular in the form of a thin coating to the side surfaces of the structures 10' and the supporting bodies 12', so that the area between the structures 10' and the supporting bodies remains free of the stabilizing material 101. Accordingly, the stabilizing material 101 does not fill the spaces between the stamping bodies and the supporting bodies 12', but merely covers the side surfaces of the stamping bodies 10' and the supporting bodies 12'.

[0058] In this embodiment, the diameter of the stamp bodies 10' tapers toward the stamp surface 11, so that they form a truncated pyramid or a truncated cone. The resulting stamp differs from the previous embodiment, in which the edge length remains essentially the same across the height, and the stamp bodies are constructed from cuboid-shaped structures.

[0059] The embodiment shown in Figures 3A to 3C with different materials for the support body 12 and the stamp body 10 can also be varied in order to realize different configurations adapted to the components to be transferred.

[0060] Figures 4A to 4C show some process steps for producing a plurality of transfer stamps according to the proposed principle. In Figure 4A, a base body 13' with a support body 12' is provided, which is activated on its surfaces by a plasma process in Figure 4B. Similarly, a temporary carrier 20 is prepared with several cuboid stamp bodies 10, whose surfaces are also activated by the plasma process.

[0061] The distance between the individual stamp bodies 10 corresponds to the distance between the centers of the respective support bodies 12'. The carrier 20 and the base body 13' with the respective elements are arranged opposite one another, and the surfaces of the stamp bodies 10 are connected to the support bodies 12. After the glass carrier 20 is removed, the stamp bodies 10 thus remain on the support bodies 12 and can be impinged upon with the stabilizing material during the subsequent process steps. In this way, for example, the embodiment according to Figure 1 can be realized.

[0062] Figures 5A and 5B show a further embodiment and transfer stamps. In Figure 5A, a base body is provided which, in addition to the base 13' and the support body 12', also has centrally arranged stamp bodies 10'. The material of the stamp bodies 10' is the same as the material of the support bodies 12', and the edge length on the top and bottom of the stamp bodies 10' is significantly less than the corresponding height up to the support body 12'. This also creates a ratio of height to edge length which is greater than 1 and in the present case lies in the range between 2 and 3.

[0063] This arrangement is then arranged opposite a structured glass carrier 20. The structured glass carrier 20 comprises a plurality of evenly spaced depressions into which a release layer 30 and a soft elastomer material 103 present therein are introduced. The plasma-activated surface of the stamp body 10'' is then introduced into the depressions so that the material 103 bonds to the surface so that, after removal, the material can also be removed from the depressions more easily through the release layer 30.

[0064] The release occurs due to the elastomer material 103 tearing off at the edges of the depressions. In an alternative embodiment, the glass carrier 20 is designed such that the release layer 30 is only located at the bottom of the depressions and on its side edges. The introduced soft elastomer layer is then brought into contact with the plasma-activated surface of the stamp body 10'' and thus connected. When moved away, the elastomer layer in the depression detaches slightly and tears at the side edges. Additional structuring of the release layer to match the depressions thus brings about a further improvement and leads to defined stamps made of soft elastomer material.

[0065] In this way, small elastomeric stamp pads 103 made of softer PDMS material are created on the upper side of the stamp body 10'. After the stamp pads 103 are removed, the side surfaces of the stamp pad 103, the side surfaces of the remaining body 10', and the support body 12' are coated with a stabilizing material. The transfer stamp thus produced is shown in Figure 5B.

[0066] LIST OF REFERENCE SYMBOLS

[0067] 1 transfer stamp

[0068] 10 stamp bodies

[0069] 10 ' stamp body

[0070] 10 ' ' stamp body

[0071] 11 Stamps surface

[0072] 12 support bodies

[0073] 12 ' support body

[0074] 13 Base body

[0075] 20 temporary carriers

[0076] 25 Cover

[0077] 101 stabilizing layer

[0078] 103 ink pads

[0079] 120 surface

[0080] 120 activated surface

[0081] 130 Base

[0082] H, h height

[0083] L, 1 length

Claims

PATENT CLAIMS Transfer stamp for transferring a plurality of optoelectronic components, comprising: A plurality of stamp bodies (10, 10', 10'') which have a height (h) and a stamp surface (11) with an edge length (1), wherein a ratio of the height to the edge length is greater than 1.3 and in particular greater than 2; a stabilizing layer (101) made of a material different from the stamp body (10, 10', 10'') on the sides of the stamp body (10, 10', 10''), wherein the stamp surface (11) remains substantially free of the material, and the material of the stabilizing layer (101) has a greater rigidity than a material of the stamp body (10, 10', 10''); and a plurality of support bodies (12, 12 ') which are each connected in the longitudinal direction to one of the stamp bodies (10, 10', 10'') and which have a surface (120) on which the stamp body (10, 10', 10'') is arranged, in particular centrally, wherein the surface is larger than the stamp surface (11).Transfer stamp according to claim 1, wherein the support bodies (12, 12') comprise a different material than the stamp bodies (10, 10', 10''), and in particular comprise a material which has greater rigidity than the material of the stamp bodies. Transfer stamp according to claim 1 or 2, wherein the support bodies (12, 12') are at least partially covered, in particular on the side surfaces, with the material of the stabilizing layer (101). Transfer stamp according to one of the preceding claims, wherein the material of the stabilizing layer (101) comprises at least one material from the following group:. SiO2; Graphite; Metal, especially Ag, Au, Ti; and TiN. Transfer stamp according to one of the preceding claims, wherein a thickness of the stabilizing layer (101) is between 1 / 1000 and 1 / 50, in particular between 1 / 800 and 1 / 100 and in particular 1 / 700 and 1 / 200 of an edge length (1) of the stamp surface (11) and / or between 5 nm and 100 nm, in particular between 10 nm and 75 nm and in particular between 20 nm and 50 nm. Transfer stamp according to one of the preceding claims, in which a stamp surface (11) has an edge length (1) in the range between 2 pm and 50 pm and in particular between 2 pm and 30 pm and in particular less than 10 pm. Transfer stamp according to one of the preceding claims, wherein regions of the side surfaces of the stamp bodies (10, 10', 10'') adjacent to the stamp surface are free of the material of the stabilizing layer, in particular starting from the stamp surface in a range of 1 nm to 30 nm and in particular in a range between 2 nm to 10 on the side surfaces.Transfer stamp according to one of the preceding claims, in which the side surfaces of the stamp bodies (10) taper towards the stamp surface. A method for producing a transfer stamp, comprising the steps: Providing a plurality of support bodies (12), each having a stamp body which has a height and a stamp surface with an edge length, wherein a ratio of the height to the edge length is greater than 1.3 and in particular greater than 2; producing a stabilizing layer (101), at least on side surfaces of the stamp bodies (10, 10', 10''), wherein the stamp surfaces (11) remain free of the stabilizing layer and a material of the stabilizing layer (11) has a greater rigidity than a material of the stamp bodies (10, 10', 10''). A method according to claim 9, wherein the step of producing the stabilizing layer (101) comprises: Covering the stamping surfaces (11) with a cover (25), in particular a plate; and at least one of the following steps: o depositing a metal, in particular Ag, Au or Ti, on at least the side surfaces of the stamping bodies; o depositing graphite on the side surfaces of the stamping bodies; o treating at least the side surfaces of the stamping bodies with a plasma; o vitrifying at least the side surfaces of the stamping bodies. Method according to claim 10, wherein after the production of the stabilising layer, regions of the side surfaces of the stamping bodies (10, 10', 10'') adjacent to the stamping surface (11) remain free of the material of the stabilising layer (101), in particular starting from the stamping surface in a range of 1 nm to 30 nm and in particular in a range between 2 nm to 10 on the side surfaces.Method according to one of claims 9 to 10, wherein the step of providing the plurality of support bodies (12, 12') each with a stamp body (10, 10', 10'') comprises:. Providing the support bodies (12) each with a settling surface (120); Providing a plurality of stamp bodies (10) having a stamp surface (11); Attaching the stamp bodies (10) to the support bodies (12). The method according to claim 12, wherein the step of attaching the stamp bodies to the support bodies comprises: Treating, in particular plasma treating, the deposition surfaces (120) and a surface opposite the stamping surfaces (11); Bringing together the treated settling surfaces (120) and the surfaces opposite the stamping surfaces (11), wherein optionally by moving away the support bodies (12), a material forming the stamp bodies is torn out of a material reservoir (100).

14. Method according to one of claims 9 to 13, wherein the stamp bodies (10) are provided on a temporary carrier (20) whose adhesive force to the stamping bodies is lower than an adhesive force between the surfaces of the support bodies and the stamping bodies.

15. Method according to one of claims 9 to 14, wherein a material (100) the stamp body (10) is provided on a temporary carrier (20) in recesses provided for this purpose, and the temporary carrier optionally has a release layer (30).

16. Method according to one of claims 9 to 15, wherein the material of the Support body is different from the material of the stamp body, whereby the material of the support body has a higher rigidity than the material of the stamp body.

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