Optoelectronic component with integrated aperture mask

Abstract

In order to shade the inhomogeneous edge region (503) of organic optoelectronic components (1, 1'), which region causes artefacts in the photosignal of the components, it is known practice, after the deposition of all the layers of a component, for an aperture mask to be adhesively bonded on the encapsulation of said component. The alignment of the aperture mask constitutes not only an additional work step, but also a considerable source of error. The invention overcomes these disadvantages by virtue of the fact that at least one radiation-repellent layer (3) which covers the edge region (503) of a photodetector (5) of the optoelectronic component (1, 1'), but not more than 30% of the selective area (502) thereof, is deposited, preferably by means of a coating method, directly onto a radiation incoupling layer (4) covering the entire sensitive area (501), such that the at least one radiation-repellent layer (3) is integrally bonded to the radiation incoupling layer (4).

Description

[0001] Optoelectronic component with integrated aperture mask

[0002] The invention relates to an optoelectronic component in the form of a layer stack, comprising a photodetector with a sensitive surface formed from a selective surface and an edge region surrounding the selective surface, wherein the photodetector comprises at least one photoactive layer between two spaced-apart electrodes, wherein the first electrode arranged in front of the second electrode in the illumination direction is at least semitransparent for electromagnetic radiation with wavelengths to be detected.

[0003] Photodetectors are used for the qualitative and / or quantitative detection of electromagnetic radiation. Detection can be spectrally selective, with radiation being detected within a predefined, specific wavelength range. In the photoactive layer of a photodetector, electromagnetic radiation is converted into charge carrier pairs of electrons and defects (holes). Organic photodetectors typically have a photoactive layer containing an organic electron donor compound (D), i.e., a material that donates electrons and accepts defects or holes, and an organic electron acceptor compound (A), i.e., a material that accepts electrons. The separation of the charge carrier pairs required to generate an electrical signal can occur at the interface between the donor and acceptor.After the separation of a charge carrier pair, the holes in the donor and the electrons in the acceptor are transported to the electrodes.

[0004] The photoactive layer of the photodetector can, for example, contain a mixed layer of a donor and an acceptor material, often referred to as a “D:A blend” or “bulk heterojunction blend.”

[0005] A photodetector is typically designed to detect one or more specific wavelengths or one or more specific wavelength ranges of the total spectrum of electromagnetic radiation, which are referred to below as "wavelengths to be detected" or "wavelength range to be detected." The wavelengths to be detected are determined, for example, by the band gap between the highest occupied orbital (HOMO) and the lowest unoccupied orbital (LUMO) of the donor and acceptor compounds. Direct optical excitation of an intermolecular charge transfer state (CT state) at an interface between a donor and an acceptor compound can also occur. The donor and acceptor compounds do not necessarily have to absorb in the wavelength range to be detected, i.e.The band gap between the highest occupied orbital (HOMO) and the lowest unoccupied orbital (LIIMO) of both the donor and acceptor compounds does not necessarily have to correspond to an energy equivalent within the wavelength range to be detected. Rather, the energy absorbed by a photon of electromagnetic radiation via the CT state essentially corresponds to the difference between the higher-energy HOMO of one compound and the lower-energy LIIMO of the other compound, or is even slightly lower than this difference.

[0006] Lateral deviations in the thickness of a photodetector's photoactive layer can lead to artifacts in the spectral response of the photodetector, especially when the photoactive layer is arranged between two mirror surfaces, i.e., within an optical microcavity. This can, in turn, lead to inaccuracies or errors in the evaluation of the photosignal. The "thickness" of a layer refers to the extent of the layer in the direction parallel to the surface normal of the layer, which essentially corresponds to the direction of illumination.

[0007] Accordingly, the “lateral direction” is a direction perpendicular to the direction in which the thickness is determined.

[0008] The illumination direction corresponds to the main direction of incidence of the electromagnetic radiation to be detected onto the optoelectronic component after its interaction with the sample to be examined.

[0009] When depositing organic layers, e.g. using a PVD process such as thermal evaporation, uncontrollable thickness deviations occur particularly frequently in the edge region of the photoactive layer, since the deposition of the organic layer cannot be carried out in such a way that it forms with an ideally uniform, e.g. ideally cuboid-shaped, cross-section. The edge region comprises a transition region until the complete, desired layer thickness is reached, whereby the increase in layer thickness is usually not necessarily linear, but homogeneous. The region in which thickness deviations occur during deposition usually has a lateral extent of a few 10 pm to approx. 150 pm, e.g. 50 pm. The alignment of layer deposition masks can typically only be achieved with an accuracy of a few 100 pm, e.g.200 pm, so that an undesirable layer thickness variation can occur due to an offset of deposition masks in an edge region with a lateral extent between approximately 50 pm and approximately 300 pm. These deviations can lead to artifacts and thus negatively influence the photosignal. Particularly in photodetectors with optical microcavities, an undesirable, non-selective component of the photosignal can also arise from irradiation into areas of the photodetector that are not located between the mirror surfaces. To avoid the aforementioned undesirable effects, the edge region is covered by a mask that is radiation-opaque in the wavelength range to be detected.The mask is usually made of a metallic material and has apertures in the shape and dimensions of the selective area of ​​the photodetector in order not to substantially reduce the selective area of ​​the photodetector and thus the radiation power available for detection.

[0010] The aperture masks known from the prior art are subsequently arranged on the photodetector, i.e. after complete deposition of all layers of the photodetector and its encapsulation, and must therefore be placed and fixed with micrometer precision, e.g., glued to the encapsulation.

[0011] The disadvantage is the high post-processing effort that occurs after the photodetectors have been manufactured, with the placement of the aperture mask also representing a significant source of error.

[0012] The object of the invention is therefore to overcome the aforementioned disadvantages and to provide an optoelectronic component that does not require any post-processing effort by subsequently placing an aperture mask.

[0013] The object is achieved by an optoelectronic component according to claim 1, an associated arrangement of optoelectronic components according to claim 5, a method for producing an optoelectronic component according to claim 6 and the use of the optoelectronic component or the arrangement according to claim 7. Further developments of the invention are specified in subordinate claims.

[0014] The invention achieves this objective by integrating the aperture mask into the layer stack rather than placing it externally on the encapsulated layer stack of the photodetector.

[0015] The optoelectronic component according to the invention in the form of a layer stack contains at least one photodetector having at least one photoactive layer arranged between two spaced-apart electrodes. The photoactive layer is illuminated by the first of the two electrodes, which is why the first electrode is designed to be at least semitransparent to electromagnetic radiation in the wavelength range to be detected. The sensitive area of ​​the photodetector is divided into a selective area and a peripheral area surrounding it in a frame-like manner.

[0016] According to the invention, at least one radiation coupling layer is arranged in front of the photodetector, which completely covers the sensitive area of ​​the photodetector, i.e., both the selective area and the edge region. At least one radiation-repellent layer is arranged in front of the radiation coupling layer. "Radiation-repellent" in the sense of the invention means that the layer has a high absorption coefficient or, preferably, a high reflection coefficient for the electromagnetic radiation impinging on the optoelectronic component with wavelengths to be detected, preferably an absorption coefficient or reflection coefficient of at least 80%, particularly preferably of at least 90%, most preferably of at least 95%. The at least one radiation-repellent layer is integrally bonded to the radiation coupling layer.In a preferred embodiment of the invention, the at least one radiation-repellent layer is inseparably bonded to the radiation-coupling layer by a coating process, e.g., by thermal evaporation. The at least one radiation-repellent layer is arranged such that it covers at least portions of the edge region of the photodetector, but no more than 30% of its selective area. It is clear to those skilled in the art that typical alignment accuracies of the masks for layer deposition do not allow even a slight coverage of the selective area to be prevented. Preferably, the at least one radiation-repellent layer covers no more than 20% of the selective area of ​​the photodetector, particularly preferably no more than 10%.

[0017] An optoelectronic component according to the invention can have a plurality of radiation-repellent layers arranged laterally offset from one another.

[0018] The radiation-repellent layer shields the edge area of ​​the photodetector covered by it from electromagnetic radiation, so that this radiation essentially does not contribute to signal generation in the photodetector. The radiation-repellent layer thus provides a defined aperture through which the selective area of ​​the photodetector is illuminated, with the photoactive layer of the photodetector having a sufficiently homogeneous thickness below the selective area.

[0019] For the purposes of the invention, the “selective area” of the photodetector is understood to mean the laterally extended area of ​​the photodetector that is sensitive to the incident electromagnetic radiation with wavelengths to be detected, below which the photoactive layer of the photodetector has a sufficiently homogeneous thickness so that no artifacts are caused by thickness deviations in the spectral response.

[0020] For the purposes of the invention, the "sensitive area" of the photodetector is the laterally extended area of ​​the photodetector that is sensitive to the incoming electromagnetic radiation with wavelengths to be detected, within which the incoming electromagnetic radiation results in a measurable photosignal. This measurable photosignal can be caused by electromagnetic radiation with wavelengths to be detected, as well as contain an undesirable component caused by electromagnetic radiation with wavelengths other than those to be detected.

[0021] In this sense, the “edge area” corresponds to the portion of the sensitive area of ​​the photodetector that cannot be assigned to the selective area.

[0022] The direction and location specifications "before," "after," and "below" refer to the direction of illumination. Therefore, if a first layer is positioned "before" a second layer, the incoming electromagnetic radiation hits the first layer first and then the second layer.

[0023] An optoelectronic component or an arrangement of several optoelectronic components can be assigned an illumination system that emits electromagnetic radiation, e.g., at wavelengths to be detected. The optoelectronic component detects the electromagnetic radiation either after reflection from the sample under investigation or after transmission through it.

[0024] One of the two electrodes of the optoelectronic component according to the invention, referred to as the "first electrode" within the meaning of the invention, is designed such that the optoelectronic component can be illuminated by this electrode. For example, the first electrode is designed to be transparent at least for the wavelengths to be detected.

[0025] If the first electrode has a reflective surface which represents a mirror surface of an optical microcavity, the first electrode can be semi-transparent at least in the wavelength range to be detected, so that at least radiation in the wavelength range to be detected can be transmitted through the first electrode, but is also reflected by the reflective surface of the electrode.

[0026] Depending on the illumination direction and configuration of the optoelectronic component, the first electrode can be the bottom electrode, i.e. the electrode located closest to the substrate, or the top electrode, i.e. the electrode further away from the substrate.

[0027] The first and second electrodes can consist of a layer system comprising several individual layers arranged one above the other. For example, one electrode or both electrodes can have a mirror layer and / or a layer for improving the nucleation behavior of adjacent layers. An optoelectronic component according to the invention can be connected to a readout unit for reading, preferably also for further processing, electrical signals generated by the optoelectronic component.

[0028] The optoelectronic component according to the invention can be arranged on a substrate that can be rigid, semi-flexible, or flexible. Depending on the direction from which the optoelectronic component is to be illuminated, it is expedient to make the substrate transparent at least for the wavelengths to be detected in order to be able to illuminate the optoelectronic component through the substrate.

[0029] The advantage of the optoelectronic component according to the invention is that the aperture mask in the form of the at least one radiation-shielding layer does not have to be applied and aligned externally to the optoelectronic component, but rather is inseparably integrated into the optoelectronic component as an integral part of the layer stack. Thus, no post-processing effort is required for subsequent arrangement of the aperture mask on the layer stack, e.g., on the encapsulation of the optoelectronic component.

[0030] An additional benefit of the invention is that the radiation coupling layer, which is arranged between the first electrode of the photodetector and the radiation-repellent layer for electrical insulation, leads to an increase in the photosignal by influencing the distribution of the optical field and its amplitude in the photoactive layer. Furthermore, the radiation coupling layer can reduce the external reflection of the first electrode.

[0031] Materials suitable for the radiation coupling layer are those that have the highest possible transparency in the wavelength range to be detected and a refractive index suitable for increasing the photosignal, such as, for example, but not exclusively, organic semiconductor materials such as Alqa (Tris(8-hydroxyquinoline)aluminum(III)), BF-DPB (N,N'-Bis(9,9-dimethyl-9H-fluoren-2-yl)-N,N'-diphenylbenzidine), Ceo, etc.

[0032] The at least one radiation-repellent layer preferably consists of a metallic material, particularly preferably aluminum. Alternatively, the at least one radiation-repellent layer preferably consists of a dielectric mirror material.

[0033] Preferably, a radiation-repellent layer extends beyond the portion of the edge region of the photodetector that it covers, typically by a few hundred microns, for example, 250 microns, but without significantly protruding into the selective area of ​​the photodetector, i.e., for example, without reducing the selective area by more than 30%, preferably without reducing it by more than 20%, particularly preferably without reducing it by more than 10%. The radiation-coupling layer preferably extends beyond the at least one radiation-repellent layer, typically by a few hundred microns, for example, 250 microns.

[0034] The photodetector can have additional layers arranged between the two electrodes of the photodetector. Preferably, the photodetector has charge carrier transport layers as additional layers, e.g., a hole transport layer (HTL) arranged between the photoactive layer and the hole-collecting electrode, typically the top electrode, and / or an electron transport layer (ETL) arranged between the photoactive layer and the electron-collecting electrode, typically the bottom electrode. To improve the transport properties, the ETL is often n-doped; the HTL is p-doped. An undoped transport layer can be inserted between the photoactive layer and a doped transport layer to improve charge carrier extraction from the photoactive layer.

[0035] The optoelectronic component can have an encapsulation to reduce the effects of harmful environmental influences. The encapsulation and substrate seal the layered structure of the optoelectronic component from the environment. The entire layered structure of the optoelectronic component according to the invention is located within the encapsulation.

[0036] In addition to those already mentioned, an optoelectronic component according to the invention can also have further layers, e.g., optically transparent spacer layers.

[0037] There are two essential configurations for arranging the layer structure of an optoelectronic component according to the invention, which essentially result from the illumination direction of the incident electromagnetic radiation.

[0038] In the "bottom illumination" configuration, the optoelectronic component is illuminated through the substrate and the bottom electrode. The at least one radiation-shielding layer can be deposited, e.g., vapor-deposited, directly onto a substrate, e.g., made of glass or plastic. The deposition occurs only where at least portions of the edge region of the photodetector are formed, and, within the limits of the alignment accuracy of the deposition masks, not where the selective area of ​​the photodetector is located. Subsequently, the radiation coupling layer is deposited on both the radiation-shielding layer and the substrate.The first, at least semi-transparent electrode, here the bottom electrode, and the other layers of the photodetector are arranged below, finally with the second electrode, here the top electrode, which can be opaque in the wavelength range to be detected. In the "top illumination" configuration, in which the incident electromagnetic radiation enters the photodetector through the top electrode, the layers of the optoelectronic component are deposited opposite to the direction of illumination. First, the second electrode, here the bottom electrode, of the photodetector is deposited on the substrate, and the remaining layers of the photodetector are deposited on the second electrode, finally with the first, at least semi-transparent electrode, here the top electrode. The radiation coupling layer is arranged on this, covering the selective area and the edge region of the photodetector.The radiation-repellent layer is arranged on the radiation coupling layer in the edge region of the photodetector. Since the illumination is not transmitted through the substrate but through the top electrode, this, like the bottom electrode, can be opaque in the wavelength range to be detected.

[0039] A plurality of optoelectronic components according to the invention can be combined to form an arrangement, for example in the form of a grid or line, or of any other design. The optoelectronic components according to the invention of the arrangement preferably differ in the wavelengths to be detected, i.e. the components are optimized for the detection of mutually differing wavelength ranges. The plurality of optoelectronic components are preferably arranged on the same substrate. In such an arrangement, a radiation coupling layer can cover the sensitive areas of a plurality of photodetectors. Likewise, the at least one radiation-repellent layer can cover the edge regions of a plurality of photodetectors. For example, a plurality of radiation-repellent layers can be deposited laterally offset from one another on the radiation coupling layer or on the substrate. A first radiation-repellent layer can then, for example,cover a first portion of the edge region of a plurality of photodetectors, and a second radiation-repellent layer arranged laterally offset from the first can cover a second portion of the edge region of the same plurality of photodetectors.

[0040] During the production of an optoelectronic component according to the invention, a radiation coupling layer and a radiation-shielding layer are inseparably bonded together by a coating process, e.g., thermal evaporation. Only then is the optoelectronic component encapsulated.

[0041] The optoelectronic component according to the invention or the arrangement of optoelectronic components according to the invention is preferably used for detecting electromagnetic radiation in the visible and NIR wavelength range (wavelengths between 380 and 3000 nm). In the following, the invention is explained by exemplary embodiments with reference to figures, without being limited to these.

[0042] Fig. 1 is a schematic side view of the layer stack of an optoelectronic component according to the invention illuminated by the substrate and the bottom electrode (bottom illumination);

[0043] Fig. 2 is a schematic side view of the layer stack of an optoelectronic component according to the invention illuminated by the top electrode (top illumination);

[0044] Fig. 3 is a schematic plan view of a grid-shaped arrangement of four optoelectronic components according to the invention;

[0045] Fig. 4 shows a comparison of measurements of the EQE on a first grid-shaped arrangement of 16 optoelectronic components according to the invention with different wavelengths to be detected, on the one hand without a radiation coupling layer and without an integrated aperture mask (Fig. 4a), and on the other hand with a radiation coupling layer and with an integrated aperture mask (Fig. 4b);

[0046] Fig. 5 shows a comparison of measurements of the EQE on a second grid-shaped arrangement of 16 optoelectronic components according to the invention with different wavelengths to be detected, on the one hand with a radiation coupling layer and without an integrated aperture mask (Fig. 5a), and on the other hand with a radiation coupling layer and with an integrated aperture mask (Fig. 5b).

[0047] Fig. 1 shows a side view of an optoelectronic component 1 with bottom illumination. The optoelectronic component 1 is designed as a layer stack. The optoelectronic component 1 is illuminated by means of an illumination source (not shown) after interaction with the sample to be examined (not shown) through the substrate 2 in the illumination direction 100. The substrate 2, which can be a glass, plastic, or silicon substrate, for example, is accordingly transparent to the electromagnetic radiation incident on the optoelectronic component 1 with wavelengths to be detected, for example, wavelengths in the NIR range of the electromagnetic spectrum.

[0048] The substrate 2 is partially vapor-deposited with two laterally offset, radiation-shielding metallic layers 3, e.g., made of aluminum with a thickness of 200 nm. Between the radiation-shielding layers 3 and the photodetector 5, a radiation coupling layer 4 is arranged, which consists of an organic semiconductor material, e.g., the electron transport material Ceo, and typically has a thickness in the order of 100 nm, e.g., 200 nm or 500 nm. The photodetector 5 has a first electrode 51 (bottom electrode, electron-collecting) and a second electrode 52 (top electrode, hole-collecting), between which, following one after the other in the illumination direction 100, an electron transport layer (ETL) 53, the photoactive layer

[0049] 54 and a hole transport layer (HTL) 55 are arranged. The sensitive area 501 of the photodetector 5, which is oriented perpendicular to the image plane, is divided into a selective area 502 and an edge region 503 surrounding the selective area 502. The radiation-repellent layer 3 is arranged at least on portions of the edge region 503 and overlaps it, within the scope of the deposition accuracy, only in such a way that the selective area 502 is not swept over. The edge region 503 can also be only partially covered by the radiation-repellent layer 3, i.e. only portions of the edge region 503 are covered, while other portions of the edge region, in particular portions that cause only minor artifacts in the photosignal because, for example, an electrode is arranged in front of these portions, can be left uncovered. The radiation coupling layer 4, on the other hand, covers at least the entire sensitive area 501 and overlaps it on all sides.

[0050] A radiation-repellent layer 3 has a reflectance of at least 80%, particularly preferably at least 90%, very particularly preferably at least 95%, in the wavelength range to be detected, so that a predominant portion of the electromagnetic radiation impinging on the region of the optoelectronic component 1 in which a radiation-repellent layer 3 is arranged is reflected and thus does not impinge on the layers downstream of the radiation-repellent layer 3, in particular not on the photoactive layer 54.

[0051] In the optoelectronic component T shown in Fig. 2, the top electrode functions as the first electrode 51 and the bottom electrode as the second electrode 52, i.e., the optoelectronic component T is illuminated in the illumination direction 100 by the top electrode 51. The radiation coupling layer 4 is deposited on the top electrode 51 and covers at least the entire sensitive area 501. The radiation coupling layer 4 can, for example, contain the hole transport material BF-DPB. The photoactive layer 54 is arranged between the two electrodes 51, 52 of the photodetector 5. Between the photoactive layer 54 and the hole-collecting top electrode

[0052] 55, the photodetector 5 contains a hole transport layer (HTL) 55; between the electron-collecting bottom electrode 52 and the photoactive layer 54, an electron transport layer (ETL) 53. The two radiation-repellent layers 3 are arranged laterally offset from one another on the radiation coupling layer 4 and cover only two portions of the edge region 503 of the photodetector 5, which they slightly project laterally beyond, but, within the limits of deposition accuracy, not in the direction of the selective area 502. Illumination of the photoactive layer 54 thus occurs only below the selective area 502 and not below the edge region 503. An optoelectronic component according to the invention with top illumination can, for example, have the following sequence of layers in the specified thicknesses (listed opposite to the illumination direction):

[0053] Substrate (1.1 mm glass) - opaque bottom electrode with mirror surface (3 nm MoOa - 1 nm Au - 100 nm Ag) - ETL (50 nm n-doped Ceo - photoactive layer (300 nm Ceo:ZnPc) - HTL (50 nm p-doped MeO-TPD) - partially transparent top electrode (3 nm MoOa - 1 nm Au - 20 nm Ag) - radiation coupling layer (200 nm Ceo) - radiation-repellent layer (200 nm Al).

[0054] After complete deposition, the layer sequence is sealed against the environment with a cover glass in an inert atmosphere.

[0055] Fig. 3 shows the top view in the illumination direction (z-direction, into the plane of the drawing) of a 2x2 arrangement 10 of four photodetectors 5a, 5b, 5c, 5d with top illumination on the same substrate 2. The sensitive areas 501 of all four photodetectors 5a, 5b, 5c, 5d are completely covered by a common radiation coupling layer 4, which projects laterally beyond the four photodetectors 5a, 5b, 5c, 5d in all directions (x, -x, y, -y). The sensitive area 501 of each photodetector 5a, 5b, 5c, 5d is divided into a selective area 502 and a frame-shaped edge region 503 surrounding the selective area 502, as shown by way of example for the upper right photodetector 5b. Three radiation-repellent layers 3a, 3b, 3c are arranged on the common radiation coupling layer 4.The radiation-repellent layer 3a covers a first portion of the edge region 503 extending in the x-direction of the two photodetectors 5a and 5b, which are arranged laterally offset from one another in the x-direction, and projects beyond it in the x-, -x-, and -y-directions such that the selective area 502 of the photodetectors 5a and 5b is not covered but is completely illuminated, within the deposition accuracy. The radiation-repellent layer 3c covers a first portion of the edge region 503 extending in the x-direction of the two photodetectors 5c and 5d, which are arranged laterally offset from one another in the x-direction, and projects beyond it in the x-, -x-, and y-directions such that the selective area 502 of the photodetectors 5c and 5d is not covered but is completely illuminated, within the deposition accuracy.The radiation-repellent layer 3b covers a second of the portions of the edge region 503 of all photodetectors 5a, 5b, 5c, 5d extending in the x-direction and projects beyond this in the x- and -x-direction as well as in the y-direction for the photodetectors 5c and 5d and in the -y-direction for the photodetectors 5a and 5b, without, within the scope of the deposition accuracy, covering the selective area 502 of the photodetectors 5a, 5b, 5c, 5d. The portion of the edge region 503 of the photodetectors 5a, 5b, 5c, 5d extending in the y-direction is not covered by radiation-shielding layers in Fig. 3, since the top electrode is arranged at least partially in front of this portion, whereby the portion extending in the y-direction causes significantly fewer artifacts than the portion of the edge region extending in the x-direction, which is not covered by the top electrode. It is understood that covering this portion of the edge region 503 is also within the scope of the invention.

[0056] Figs. 4a and 4b show measurements of the EQE as a function of the wavelength on a first grid-shaped arrangement of 16 optoelectronic components, where each of the components is optimized for a different wavelength to be detected, i.e., for each optoelectronic component, the EQE has a maximum at a different wavelength, thus in total at the 16 different wavelengths indicated in the two figures. Fig. 4a shows measurements of the EQE of an arrangement without a radiation coupling layer and without a radiation-repellent layer, i.e. without an integrated aperture mask. Fig. 4b shows measurements of the EQE of the same arrangement with aa radiation coupling layer completely covering the sensitive area of ​​each of the 16 photodetectors of the associated optoelectronic components, and several radiation-repellent layers each covering portions of the edge region of several photodetectors of the associated optoelectronic components. A comparison of Figs. 4a and 4b shows, firstly, that the EQE maximum for all optoelectronic components is higher in Fig. 4b than in Fig. 4a, which can be interpreted as an effect of the radiation coupling layer. The increase ranges from 7% for optoelectronic components designed for a lower wavelength to be detected to 40% for optoelectronic components designed for a higher wavelength. Secondly, the comparison shows that, in particular, the artifacts visible in Fig. 4a in the EQE curves at low wavelengths can be reduced by an integrated aperture mask as in Fig.4b should be mitigated.

[0057] This effect can be seen even more clearly when comparing Fig. 5a and 5b. Both figures show measurements of the EQE as a function of wavelength on a second grid-like arrangement of 16 optoelectronic components, where each of the components is optimized for a different wavelength to be detected, i.e. for each optoelectronic component the EQE has a maximum at a different wavelength, i.e. in total at the 16 different wavelengths indicated in the two figures. In the arrangement in Fig. 5a, a common radiation coupling layer completely covers the sensitive areas of all 16 photodetectors of the associated optoelectronic components. In Fig. 5b, several radiation-repellent layers are additionally arranged on the radiation coupling layer in such a way that portions of the edge region of all 16 photodetectors of the associated optoelectronic components are covered. The layers shown in Fig.The measurements shown in Fig. 5b show a significantly reduced EQE at low wavelengths. The shoulder at low wavelengths visible in Fig. 5a, caused by layer thickness inhomogeneities in the edge region, can be significantly mitigated with an integrated aperture mask, as shown in Fig. 5b.

[0058] Reference symbol

[0059] 1 Optoelectronic component (bottom illumination)

[0060] 1' Optoelectronic component (top illumination)

[0061] 10 Arrangement of several optoelectronic components

[0062] 100 Lighting direction

[0063] 2 Substrat

[0064] 3, 3a, 3b, 3c Radiation-shielding layer

[0065] 4 Radiation coupling layer

[0066] 5, 5a, 5b, 5c, 5d photodetector

[0067] 501 Sensitive area of ​​the photodetector

[0068] 502 Selective area of ​​the photodetector

[0069] 503 Edge area of ​​the photodetector

[0070] 51 First electrode

[0071] 52 Second electrode

[0072] 53 Electron transport layer (ETL)

[0073] 54 Photoactive layer

[0074] 55 Hole transport layer (HTL)

Claims

Patent claims 1. An optoelectronic component (1, 1') comprising a photodetector (5) with a sensitive surface (501) formed from a selective surface (502) and an edge region (503) surrounding the selective surface (502), wherein the photodetector (5) comprises at least one photoactive layer (54) between two spaced-apart electrodes (51, 52), wherein the first electrode (51) arranged in front of the second electrode (52) in the illumination direction (100) is at least semitransparent to electromagnetic radiation with wavelengths to be detected, characterized in that at least one radiation coupling layer (4) is arranged in front of the photodetector (5), which completely covers the sensitive surface (501) of the photodetector (5), and at least one radiation-repellent layer (3) integrally bonded to the radiation coupling layer (4) is arranged in front of the at least one radiation coupling layer (4),which shields at least parts of the edge region (503) of the photodetector (5) against electromagnetic radiation with wavelengths to be detected, but not more than 30% of its selective area (502).

2. Optoelectronic component (1, 1') according to claim 1, characterized in that the radiation-repellent layer (3) is inseparably connected to the radiation coupling layer (4) by a coating process.

3. Optoelectronic component (1, T) according to claim 1 or 2, characterized in that the at least one radiation-repellent layer (3) contains a dielectric material.

4. Optoelectronic component (1, T) according to claim 1 or 2, characterized in that the at least one radiation-repellent layer (3) contains a metal.

5. Optoelectronic component (1, 1') according to one of the preceding claims, characterized in that the at least one radiation coupling layer (4) contains an organic semiconductor material. Optoelectronic component (1, 1') according to one of the preceding claims, characterized in that the optoelectronic component (1, 1') is sealed from the environment by encapsulation. Optoelectronic component (1, 1') according to one of the preceding claims, characterized in that the radiation-repellent layer (3) covers no more than 20% of the selective area (502) of the optoelectronic component (1, 1'), preferably no more than 10%.Arrangement (10) of at least two laterally offset optoelectronic components (1, 1') according to one of the preceding claims, each having at least one photodetector (5a, 5b, 5c, 5d) on the same substrate (2), wherein a radiation coupling layer (4) completely covers the sensitive area (501) of at least two of the photodetectors (5a, 5b, 5c, 5d) of the associated optoelectronic components (1, 1') of the arrangement (10) and a radiation-repellent layer (3) covers portions of the edge region (503) of at least two of the photodetectors (5a, 5b, 5c, 5d) of the associated optoelectronic components (1, 1') of the arrangement (10).A method for producing an optoelectronic component (1, 1') according to one of claims 2 to 7, characterized in that the at least one radiation-repellent layer (3) and the at least one radiation-coupling layer (4) are inseparably bonded to one another by a coating process. Use of an optoelectronic component (1, 1') according to one of claims 1 to 7 or the arrangement (10) according to claim 8 for detecting electromagnetic radiation with wavelengths in the visible range and / or in the NIR range.

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