A method for controlled, real-time selective irradiation of a predetermined dose onto a target area of ​​a surface, and the corresponding system.

Abstract

The present invention relates to a method for the controlled selective irradiation of a target area on the surface of a given product or living organism, to enable the localized irradiation of this target area in order to obtain a target effect. This method is implemented by a system comprising an emitting device, at least one measurement and analysis device, and a control device. This method comprises the steps of: - real-time measurement and recording of the actual principal energy at the level of the target area; - analysis and recording of the actual effect obtained at the level of this target area; and - real-time control of the emitting device by the control device, taking into account the measurement of the actual principal energy and the analysis of the actual effect, which are compared respectively to a predetermined energy threshold associated with the target area and to the expected target effect, so that,If the predetermined energy threshold is not reached but the target effect is achieved, irradiation of the target area is stopped. Figure for the abbreviation: 1,

Description

Title of the invention: Method for selective irradiation controlled in real time of a predetermined dose on a target area of ​​a surface, and corresponding system Technical field of the invention

[0001] The present invention relates to the general field of irradiation of surfaces by energetic radiation.

[0002] The invention relates more particularly to a method for controlled selective irradiation of a target area of ​​a surface implementing a system comprising a programmable emitting device, at least one measuring and analyzing device and a controller device, these devices being connected to each other in a closed loop. In this method, the controller device controls the emitting device in real time during the irradiation process, as a function of data relating to the actual energy measured at the irradiated target area and the actual effect obtained at this target area. This method according to the invention is also capable of taking into account the collateral energies measured around the irradiated target area. Technical background

[0003] Irradiation methods are known to those skilled in the art, particularly those adapted to the field of additive manufacturing. Thus, the method described in patent application DE102015216583 A1 may be cited, which is implemented by an irradiation system comprising, on the one hand, a source emitting energy radiation such as laser beams, and, on the other hand, a control device configured to adjust the radiation emitting source as a function of the object to be manufactured. This adjustment of the emitting source by the control device is a function of parameters previously entered into the control device: the latter can then control the emitting source so that it reaches the predetermined energy parameters associated with it.

[0004] However, such a method has the disadvantage of not being able to take into account the actual progress of the manufacture of the object, and thus control the emitting source according to predetermined data and at the same time data measured in real time.

[0005] To overcome this drawback, new additive manufacturing processes by irradiation have been developed: we can notably cite the process disclosed in patent EP3311983 Bl, which is capable of controlling the emitting source in real time during irradiation, to adapt to the actual object being manufactured. For this, the irradiation process of EP3311983 Bl is implemented by an irradiation system which further comprises a device capable of measuring the energy emitted by the radiation from the emitting source at the irradiated area, and of transmitting this measured data to the control device. This control device is then able to adapt the power and / or the intensity of the energy radiation emitted by the emitting source during the irradiation process so that the energy actually emitted does not deviate from the basic energy parameters.

[0006] However, although this method allows real-time control of the emitting source, it still does not allow this emitting source to be controlled so that it is capable of taking into account the result actually expected, outside of the basic energy parameters: the control device is thus not able to control the emitting source for:

[0007] - that it stops when the manufacture of the expected product is finished, even if the basic parameters are not met, or

[0008] - that the source continues to emit energetic radiation while the pa basic parameters are achieved (the manufacture of the expected product not being completed). In the method of EP3311983 Bl, the power or energy intensity of the emitting source can be adjusted, and in particular reduced, or even switched off, if the control device determines that the threshold energy dose has been reached, or conversely, increased to reach this threshold. But the method of EP3311983 Bl does not allow the control device to determine whether the basic energy parameters actually make it possible to achieve the expected final result. As a result, such an irradiation system has the disadvantage of either generating energy and time losses, if the emitting source continues to emit radiation when the final result has already been achieved, or of not achieving the desired result, if the source stops because it has reached the basic energy parameters, but the final result is not achieved.

[0009] There is therefore a need for new methods and systems for irradiation by energetic radiation which adapt effectively in real time to the result actually obtained at the level of the irradiated surface, while making it possible to reduce losses. Summary of the invention

[0010] For this purpose, the invention proposes, according to a first object, a method for controlled selective irradiation of a target area of ​​a surface of a given product or living being, to allow local radiation of this target area in order to obtain a target effect, this method being implemented by a system comprising an emitting device, at least one measuring and analyzing device and a controller device. This method comprises the following steps: A) segmentation of the surface into a plurality of zones; B) input into the controller device of predetermined main energy thresholds respectively associated with each of the zones, and input of the target effect to be obtained; C) choice of the target area among the areas and their combinations; D) irradiation of the target area by emission of energetic radiation by the emitting device, this emission being controlled by the controller device in order to reach the predetermined main energetic thresholds; E) measurement and recording in real time, by the measuring and analysis device, of the actual energy generated by the energy radiation at the target area; F) analysis and recording, by the measuring and analysis device, of the actual effect obtained at the irradiated target area; G) transmission of the actual energy measurement and the actual effect analysis to the controller device; H) real-time control of the emitting device by the controller device during the irradiation process, taking into account the actual energy measurement and the analysis of the actual effect received, the actual energy measurement being compared to the predetermined main energy threshold associated with the target area (C), and the analysis of the actual effect being compared to the target effect, so that: -Hl) if the main energy threshold is not reached and the target effect is not obtained, the emission of energy radiation on the target area continues and the power and / or intensity of the energy radiation is modulated to obtain the target effect (O); -H2) if the main energy threshold is reached but the target effect is not obtained, the emission of energy radiation on the target area continues and the power and / or intensity of the energy radiation is modulated to obtain the target effect; -H3) if the main energy threshold is reached and the target effect is obtained, the emission of energy radiation on the target area is stopped; -H4) if the main energy threshold is not reached but the target effect is obtained, the emission of energy radiation on the target area is stopped.

[0011] Such a method according to the invention thus makes it possible to control the irradiation in real time of a target area, taking into account basic parameters of energy and target effect, but also taking into account the actual energy felt at the target area and the actual effect obtained at this area. Thus, unlike the irradiation methods of the prior art, according to the method of the invention, the predetermined energy parameters, which serve as a guide for conducting the irradiation process, are not necessarily reached when this is not useful: in fact, this method according to the invention is capable of determining that the irradiation can be stopped because the target effect, which is analyzed in parallel with the measurement of the actual energy, is already obtained, although the actual energy parameters do not entirely correspond to the basic energy parameters. Conversely, according to the method of the invention, and still unlike the irradiation methods of the prior art, it can be determined that the effective irradiation of the target area must continue, although the predetermined parameters are already reached, which makes it possible to obtain the expected effect with certainty. In addition, if a comodality of trends of the corrective parameters is validated, the initial parameters are self-corrected.

[0012] This modulation of the energy parameters in real time, and in particular the stopping of the emission of energy radiation as soon as it is determined that the target effect is obtained, advantageously makes it possible to reduce the energy and financial losses usually linked to conventional irradiation processes, since the continuous and unnecessary irradiation of the target zone for which the target effect is already achieved is limited, or even eliminated.

[0013] Furthermore, being able to concentrate the irradiation on a specific target area makes it possible to locally irradiate only the required surface, minimizing, or even eliminating, peripheral irradiation, which is one of the major causes of energy and financial losses in known irradiation processes. This advantage is also very clearly illustrated in the field of health, for example by minimizing the risk of burns in the areas surrounding the irradiated target area.

[0014] Such a method can be implemented in all fields that involve the irradiation of a material for a given purpose. Thus, for example, this method can be implemented in the field of microelectronics, to manufacture semiconductor parts by additive manufacturing: the target effect corresponds in this case to the solidification of at least a portion of a layer of material according to a polymerization process by irradiation. This method can also be implemented in the medical field: the effect corresponds in this case to the destruction of a tumor by irradiation. This method can also be implemented in the field of cosmetics, in particular in nail care: the target effect corresponds in this case to the solidification of a layer of varnish on a nail via polymerization by irradiation.

[0015] According to one embodiment, the method according to the invention further comprises the following steps:

[0016] A') input into the predetermined secondary energy threshold controller device terminated respectively associated with each of said zones;

[0017] B') measurement and recording in real time, by the measurement and analysis device, collateral real energy, generated at at least one area of ​​the plurality of areas which is adjacent to the target area, this collateral real energy being generated by the energetic radiations irradiating the target area;

[0018] C') transmission of the measurement of the actual collateral energy to the controller device;

[0019] D') real-time control of the transmitter device by the controller device during of the irradiation method, taking into account the measurement of the actual collateral energy,

[0020] this measurement of the actual collateral energy being compared to the predetermined secondary energy threshold associated with the at least one zone of the plurality of zones which is adjacent to the target zone, so that:

[0021] if the secondary energy threshold of the at least one zone adjacent to the target zone is reached, the power and / or the intensity of the energy radiation irradiating the target zone (C) are modulated to reduce the actual collateral energy.

[0022] It is thus also possible, according to the method of the invention, to modulate the emitting source as a function of secondary parameters, and in particular as a function of the collateral energy felt and measured at the level of the zones adjacent to the irradiated target zone. In the same way as for the control of the emitting source as a function of the real energy measured at the level of the irradiated target zone, the system of the invention is capable of comparing the real energy of the zones adjacent to the target zone with energy thresholds at the level of these zones, which correspond to so-called secondary thresholds, taken into account when the zones associated with these thresholds are not target zones, but zones collateral to the target zone.The method according to the invention therefore advantageously allows very precise control of the irradiation of the target zone, depending on parameters of different levels (main and secondary), which are not necessarily linked to the zone actually irradiated.

[0023] According to a particular embodiment, the target area corresponds to the entire surface.

[0024] The method according to the invention, which makes it possible to control the emitting device in real time, makes it possible to irradiate only part of the target zone, or the entirety of it.

[0025] According to a particular embodiment, the emitting device is fixed and chosen from a matrix comprising a plurality of independent emitting sources and an emitting source associated with an optical galvanometer.

[0026] Thus, when the emitting device is a matrix comprising a plurality of independent emitting sources, the control of the emitting device by the controller device may correspond to the activation and / or deactivation of one or more of the multiple emitting sources making up the emitting device, depending on the actual energy measured and the actual effect analyzed at the target area. For example, the method according to the invention allows the controller device to reduce the power and / or the energy intensity of certain emitting sources of the emitting device, or even to deactivate certain of them, if the controller device determines that the actual energy at certain portions of the target area is approaching, or even reaching or exceeding, the predetermined main energy threshold, and that the target effect is close to being obtained, or even has already been obtained. Conversely, this irradiation process also allows the controller device to increase the power and / or energy intensity of certain emitting sources of the emitting device, or even to activate certain of them, if the controller device determines that the actual energy at certain portions of the target area is lower than the predetermined main energy threshold, and that the target effect is not obtained.

[0027] According to a particular embodiment, when the emitting device is a matrix comprising a plurality of independent emitting sources, these independent emitting sources are LEDs.

[0028] LEDs are devices that are easy to integrate into the system of the invention, simple to implement and handle, and inexpensive.

[0029] According to one embodiment, the transmitting device is mobile, such as a mobile source mounted on an axis.

[0030] According to a particular embodiment, the measuring and analysis device is a thermal and / or radiative imaging sensor, associated with an image analysis module.

[0031] Thus, the measuring and analyzing device implemented in the irradiation method according to the invention is capable of both measuring the actual energy at the target area and the actual energy at the areas adjacent to the target area, and analyzing the progress / state of the actual effect at the target area, while avoiding damaging the target. It can therefore transmit these two types of data to the controller device, which is then able to determine how to control the emitting device to achieve the predetermined energy thresholds and at the same time the expected target effect.

[0032] According to a particular embodiment, the controller device is a Human-Machine interface.

[0033] Such an interface is easy to integrate into the system of the invention, and simple to implement and manipulate.

[0034] According to a particular embodiment, the energy radiations are chosen from visible light, infrared, gamma, ultraviolet, laser radiations, microwaves, X-rays, and convective or conductive thermal deployment.

[0035] The method according to the invention can thus advantageously be adapted to any type of irradiation, and can, according to at least one embodiment, combine them.

[0036] According to a second object, the invention proposes a system for controlled selective irradiation of a target zone of a surface of a given product or living being, segmented into a plurality of zones, this system implementing the method as described previously, and comprising: - an emitting device, configured to irradiate the target area with energy radiation, - at least one measuring and analyzing device, configured to measure the actual energy generated by the energy radiation at the target area and the collateral actual energy generated at at least one area of ​​the plurality of areas which is adjacent to the target area, as well as to analyze the actual effect obtained at the irradiated target area, - a controller device, configured to receive predetermined main and secondary energy thresholds, respectively associated with each of the zones and a target effect to be obtained, as well as to receive the measurement of the actual energy and the collateral actual energy generated at at least one zone of the plurality of zones which is adjacent to the target zone, as well as the analysis of the actual effect, the controller device comprising means for comparing the measurement of actual energy with the predetermined main energy threshold associated with the target zone, the measurement of the collateral actual energy with the predetermined secondary energy threshold of the at least one zone adjacent to the target zone, and the analysis of the actual effect with the target effect, the controller device being further configured to control the emitting device in real time during the irradiation process by stopping the emission of the energetic radiation,and / or by modulation of the power and / or intensity of the energy radiation, and / or by selective modulation of the irradiated areas.

[0037] This system has at least the same advantages as those presented in relation to the corresponding method. It corresponds to a closed loop, which is advantageously fully traceable.

[0038] According to a particular embodiment, the measuring and analysis device comprises: -at least one measuring and recording means configured to measure the actual energy generated by the energy radiation at the target area, and the actual collateral energy at at least one area adjacent to the target area, and -at least one analysis and recording means configured to analyze the actual effect obtained at the irradiated target area.

[0039] This device therefore plays an important role in being able to take into account the actual energy felt at the target area and at the same time the state of the actual effect at this area. Throughout the irradiation process, these two types of data are compared to the equivalent basic data, via the controller device, which is then able to determine whether the expected target effect is actually obtained or not at the target area, and which can consequently control the emitting device on demand with the final aim of obtaining the target effect on the target area. Furthermore, the secondary parameters, relating to the areas adjacent to the target area actually irradiated, are also monitored, in order to ensure that the variations in parameters of the emitting source do not impact the integrity of the target. An analysis of trends in target parameter variations (AI) is performed by iterations in order to adjust the predetermined parameters. Brief description of the figures

[0040] Other characteristics and advantages of the invention will appear during the reading of the detailed description which follows for the understanding of which reference will be made to the attached drawing in which:

[0041] [Fig-1] - [Fig.l] shows schematically the controlled selective irradiation system according to the invention. Detailed description of the invention

[0042] The controlled selective irradiation method is implemented by an irradiation system as illustrated in [Fig.l]. Such a system comprises an emitting device 11, at least one measuring and analyzing device 12 and a controller device 13, which operate in a closed loop. Generally, the measuring and analyzing device 12 measures the actual energy data and analyzes the actual effect at the target area, when the emitting device 11 irradiates energy radiation at this target area. It then transmits these two types of data to the controller device 13, which is then capable of controlling the emitting device 11 by modulating the energy parameters of the energy radiation emitted by it, taking into account the predetermined parameters with which it was loaded (energy thresholds and expected effect) and the actual data transmitted by the measuring and analyzing device 12.

[0043] In the embodiment of [Fig.l], the emitting device 11 emits energetic radiation R at a target area C to be irradiated, belonging to a surface S which is composed of a plurality of areas SI, S2...Si...Sn. In other embodiments of the invention, the target area may correspond to the combination of several areas of the plurality of areas SI, S2...Si...Sn of the surface to be irradiated, and may also correspond to the entire surface S, i.e. include all of the plurality of areas which make up this surface S. The emission of energetic radiation R on the target area C produces a real energy E1C at this target area, which is measurable by the method of the invention.

[0044] In this embodiment, the emitting device 11 corresponds to a matrix which comprises a plurality of independent emitting sources 111. These sources 111 can be activated or deactivated independently of each other by the controller device 13 of the system, in particular as a function of the real energy E1C measured at the level of the irradiated target zone C, as well as the real effect A1C obtained at the level of this zone, these real data being compared to predetermined data, corresponding to predetermined energy thresholds and to the final effect expected at the surface to be irradiated. In one example, these independent sources 111 are LEDs.

[0045] According to other embodiments, not illustrated, the emitting device 11 may be a mobile source mounted on an XY(Z) axis, capable of moving along this axis, or even a source positioned in a static manner and reoriented towards the target zone to be irradiated by an optical galvanometer.

[0046] The actual energy E1C and the actual effect A1C at the target area C are measured and analyzed by the measuring and analyzing device 12 of the system. For this, this device 12 comprises at least one measuring and recording means M for measuring the actual energy E1C at the irradiated target area C, as well as at least one analyzing and recording means A for analyzing the actual effect A1C at this area. According to a particular example, this device 12 corresponds to a camera which comprises as measuring and recording means M a thermal device, for measuring the temperature at the irradiated target area, which temperature corresponds to the actual energy E1C, and / or a radiation analyzing device, for measuring any type of energetic radiation emitted by the emitting device 11 at the irradiated target area.Still according to this particular example, the device 12 further comprises, as analysis and recording means A, an image analysis device, for analyzing the actual effect A1C obtained at the irradiated target area. The measuring and analysis device 12 according to the invention is in all cases capable of recording these measured energy data E1C and analyzed effect A1C, and transmits these two types of data to the controller device 13 of the system.

[0047] This controller device 13 therefore comprises the actual data of the irradiated target area C, which it received from the measuring and analyzing device 12, and it further comprises predetermined data which were loaded into this device 13 at the start of the irradiation process, which predetermined data comprise the predetermined main energy thresholds E2S1, E2S2.. .E2Si.. .E2Sn which are respectively associated with each of the areas SI, S2.. .Si.. .Sn of the surface S to be irradiated, as well as with the target effect O to be obtained. In order to control the emitting device 11 in real time, this controller device 13 comprises means for comparing the measurement of the actual energy E1C with the predetermined main energy threshold E2C associated with the target area C, and means for comparing the analysis of the actual effect A1C with the target effect O.Thus, the device 13 is capable of controlling the emitting device 11 in real time by operating different actions, which are a function of the real energy E1C and at the same time of the real effect A1C at the level of the target zone C. In particular, according to a first case, if the controller device 13 determines, by means of its different comparison means, that the real energy E1C of the target zone C is lower than the predetermined main energy threshold E2C for this zone, and that at the same time the real effect A1C . at this area does not correspond to the target effect O, it controls the emitting device 11 so that it continues to emit energy radiation on the target area, and it modulates the power and / or the intensity of these radiations, until the target effect O is obtained.

[0048] According to a second case, if the controller device 13 determines that the actual energy E1C of the target zone C corresponds to the predetermined main energy threshold E2C for this zone, but that the actual effect A1C does not correspond to the target effect O, it controls the emitting device 11 so that it continues to emit energy radiation on the target zone, and it modulates the power and / or the intensity of these radiations, until the target effect O is obtained.

[0049] According to a third case, if the controller device 13 determines that the real energy E1C of the target zone C corresponds to the predetermined main energy threshold E2C, and that at the same time the real effect A1C at the level of this zone corresponds to the target effect O, it controls the emitting device 11 so that it stops the emission of energy radiation on the target zone O, since the target effect O is indeed obtained.

[0050] Finally, according to a fourth case, if the controller device 13 determines that the actual energy E1C of the target zone C is lower than the predetermined main energy threshold E2C, but that the actual effect A1C corresponds to the target effect O, it controls the emitting device 11 so that it stops the emission of the energetic radiations on the target zone O, although the predetermined main energy threshold E2C is not reached, since the actual energetic parameters of the radiations R have made it possible to obtain the target effect O.

[0051] According to one embodiment, this controller device 13 is a Human-Machine interface, which can for example be a computer, a tablet or a smartphone, or even an automaton.

[0052] The device 13 thus allows an advantageous energy gain, since it is capable of stopping the irradiation of the target zone / surface when it is determined that the expected effect is obtained, independently of the basic energy thresholds entered in the device 13. The emission of unnecessary radiation is therefore advantageously limited, as soon as the target effect is obtained, which is relevant from a financial and environmental point of view.

[0053] The device 13 is also capable of independently controlling the plurality of emitting sources 111 of the emitting device 11, depending on the actual effect analyzed at the target area C throughout the irradiation process, to adapt this target area. For example, if the controller device 13 determines that the actual effect A1C at the target area C corresponds to the target effect O on a part of this target area, but that this target effect O is not yet obtained on the entirety of this area, it can act on the emitting device 11 to deactivate the LEDs 111 located above the part of the target area for which the target effect O is obtained, and increasing the power and / or the energy intensity of the LEDs 111 located above the part of the target area for which the target effect O is not yet obtained. Thus, the target area C actually irradiated is reduced.

[0054] According to the invention, the measuring and analyzing device 12 is also capable of measuring the actual collateral energy E3 of one or more zones, for example of a zone Si, which is adjacent / collateral to the irradiated target zone C. This measurement is recorded within the device 12, which transmits it to the control device 13. In the latter, secondary energy thresholds E4S1, E4S2, E4Si... E4Sn, associated with each of the zones constituting the surface S, have previously been entered: the control device 13 is then able to compare the collateral energy E3Si measured at the level of the zone Si adjacent to the irradiated target zone C with the secondary energy threshold E4Si of this zone.Depending on the result of this comparison, it can modulate the emitting source 11 to impact in one direction or the other the real collateral energy E4Si of this zone adjacent to the irradiated zone C: it can reduce the power and / or the intensity of the radiation from the source 11, to reduce this collateral energy E3Si, if it is determined that it has reached the secondary energy threshold E4Si of this zone, or on the contrary it can increase the power and / or the intensity of the radiation from the source 11, to increase this collateral energy E3Si, if it is determined that it has not yet reached the secondary energy threshold E4Si of this zone. Thus, the interpretation of the measurements from secondary sensors linked to the energies generated collaterally to the irradiated target zone C makes it possible to preserve the integrity of the target.

[0055] It is therefore understood that, according to the invention, each of the zones constituting the surface S to be irradiated is associated with two types of predetermined energy thresholds, entered into the control device 13: first predetermined energy thresholds E2, called main energy thresholds, and second predetermined energy thresholds E4, called secondary energy thresholds.

[0056] The energy radiation R emitted by the emitting device 11 may be visible light, infrared, gamma, ultraviolet, laser radiation, or even convective or conductive thermal deployment.

[0057] Several examples of implementation of the method and the irradiation system according to the invention are presented below for different applications. It is understood that these examples are not limiting, and that the invention can be implemented for any type of application involving the energy irradiation of a surface to obtain a given effect. First example of realization

[0058] The method according to the invention can be implemented in the case of the application of a layer of suitable varnish on a target area C, which may correspond to one or more nails of a hand and / or a toe, with the aim of obtaining a target effect O which corresponds to the solidification of the layer of varnish, by a process of polymerization by irradiation.

[0059] In this first example, the emitting device 11 is a lamp which emits ultraviolet (UV) radiation towards the target area C which corresponds to one or more nails covered with a layer of varnish, and which is made up of a multitude of UV LEDs 111.

[0060] The measuring and analysis device 12 is a UV radiation probe combined with a thermal camera, which comprises a module for measuring the UV dose and the actual temperature E1C at the surface of the irradiated nail(s) covered with varnish, and a module for visual analysis of the state of the polymerization A1C of the varnish layer at this area.

[0061] The controller device 13, for its part, is a computer, into which the predetermined temperature E2C has been entered, which a priori makes it possible to obtain the total polymerization of the varnish layer on the target zone C, as well as the target visual state O of the final polymerization of the varnish layer at this zone. This computer 13 also comprises means for comparing the actual temperature data E1C with the predetermined temperature data E2C for the target zone C to be irradiated, as well as means for comparing the actual state A1C of the polymerization of the varnish layer with the expected state O of polymerization for this zone.

[0062] In this example of application of the invention, the UV lamp 11 emits UV radiation towards the determined target zone C. The thermal camera associated with the UV probe 12 then measures the actual temperature E1C of the target zone C, and analyzes the actual state A1C of the polymerization of the varnish layer at the level of this zone. It records these two types of information, and transmits them to the control computer 13. The latter is then capable of determining, thanks to its comparison means, whether the varnish layer of the target zone has been polymerized over the entire zone, or whether one or more portions of this zone still require irradiation to obtain the expected final effect O.It is therefore capable of increasing the power and / or intensity of the UV LEDs 111 of the lamp 11, or even activating LEDs which would be switched off, and which are positioned above the portion(s) of the target area for which the layer of varnish is not yet completely polymerized, and conversely, of reducing the power and / or intensity of the UV LEDs 111, or even deactivating certain LEDs, which are positioned above the portion(s) of the target area for which the layer of varnish has been completely polymerized or above areas of epidermis.

[0063] Furthermore, according to a particular embodiment of this example, the thermal camera associated with the UV probe 12 is capable of measuring and recording the energy actual collateral energy of areas around the target nail, corresponding in particular to areas of skin around the nail. This data is transmitted to the control computer 13, which then compares it to the secondary energy threshold data associated with these areas of skin. If the computer 13 determines, at the end of this comparison step, that the effective collateral energy in these areas of skin has reached the corresponding secondary thresholds, it then modulates the power and / or intensity of the UV LEDs 111 above the irradiated nail area to reduce the energy felt at the collateral level, on the areas of skin. Thus, thanks to thermal vision, the UV radiation adjacent to the target area C is controlled, avoiding potential local burns.

[0064] Thus, the irradiation method and system according to the invention advantageously allow a substantial energy saving in the field of cosmetics, in particular nail care, because the control of the emitting devices 11 used to polymerize the layers of varnish on the nails can be adapted to the demand in a closed loop, depending on the evolution of the actual situation. It also makes it possible to minimize the risks of skin cancer linked to UV exposure and the risks of burning linked to adjacent UV or IR radiation. Second example of realization

[0065] The method according to the invention can also be implemented in the case of manufacturing a part by an additive manufacturing method, for example to manufacture semiconductors in the field of microelectronics. Such a part is notably produced by solidification of the layer(s) of material added according to the additive manufacturing technique, by polymerization by irradiation.

[0066] In this second example, the closed-loop irradiation system comprises an emitting device 11 which is a source which emits laser radiation towards the target area C, which corresponds to one or more areas of a layer of material deposited by additive manufacturing, this source 11 being made up of a multitude of laser sources 111. It also comprises a measuring and analysis device 12, which is a thermal camera as described in detail in the first example above. And it further comprises a controller device 13, which is a computer as also described in the first example above.

[0067] In this example of application of the invention, the irradiation method comprises the same steps as the irradiation method of the previous example. It is the laser sources 111 of the emitting device 11 which are controlled (activated, deactivated, modulation of their power and / or their intensity) by the control computer 13, as a function of the predetermined temperature E2C capable of completely polymerizing the target zone, and of the expected visual state O corresponding to the complete polymerization of this zone, both taking into account the actual temperature E1C measured at this target zone and the actual state of the polymerization at this zone. control device 13 therefore makes it possible to manage the laser source 11 so that the emission of unnecessary laser radiation R, because it is located at the level of a part of the fully polymerized target zone, is limited, or even stopped.

[0068] This irradiation system, in this case of application to the field of additive manufacturing, can also be able to measure and analyze the collateral energy around the target area in manufacturing, in relation to secondary energy threshold data associated with the areas adjacent to this target area.

[0069] Significant energy and financial savings can be achieved in the field of additive manufacturing. Selective radiation control also makes it possible to minimize the overall temperature rise of the target. This has a direct impact on the integrity of the semiconductor module, and opens up a range of potentially eco-responsible products for the manufacture of these semiconductors.

Claims

Claims

1. Method for controlled selective irradiation of a target area (C) of a surface (S) of a layer of material, such as a layer of varnish or a layer of a material of a semiconductor, to allow the local radiation of said target area (C) in order to obtain a target effect (O), consisting of the polymerization of the layer of material, said method being implemented by a system (1) comprising an emitting device (11), at least one measuring and analyzing device (12) and a controller device (13), said method comprising the following steps: A) segmentation of said surface (S) into a plurality of zones (SI, S2...Sn); B) input into said controller device (13) of predetermined main energy thresholds (E2S1, E2S2...E2Sn) respectively associated with each of said zones (SI, S2...Sn) and input of said target effect (O) to be obtained; C) choosing said target zone (C) from among said zones (SI, S2...Sn) and their combinations; D) irradiation of said target area (C) by emission of energetic radiation (R) by said emitting device (11), said emission being controlled by said controller device (13) in order to reach said predetermined main energetic thresholds (E2S1, E2S2...E2Sn); E) measurement and recording in real time, by said measurement and analysis device (12), of the actual energy (E1C) generated by the energy radiation (R) at said target area (C); F) analysis and recording, by said measuring and analysis device (12), of the actual effect (A1C) obtained at the level of said irradiated target zone (C); G) transmitting the measurement of said actual energy (E1C) and the analysis of said actual effect (A1C) to said controller device (13); H) real-time control of said emitting device (11) by said controller device (13) during the irradiation process, taking into account said measurement of the actual energy (E1C) and said analysis of the actual effect (A1C) received, said measurement of actual energy (E1C) being compared to the predetermined main energy threshold (E2C) associated with said target area (C), and said

2. analysis of the actual effect (A1C) being compared to said target effect (O), so that: - Hl) if said main energy threshold (E2C) is not reached and said target effect (O) is not obtained, the emission of energy radiation (R) on said target area (C) continues and the power and / or intensity of said energy radiation (R) are modulated to obtain said target effect (O); - H2) if said main energy threshold (E2C) is reached but said target effect (O) is not obtained, the emission of energy radiation (R) on said target area (C) continues and the power and / or intensity of said energy radiation (R) are modulated to obtain said target effect (O); - H3) if said main energy threshold (E2C) is reached and said target effect (O) is obtained, the emission of energetic radiation (R) on said target zone (C) is stopped; - H4) if said main energy threshold (E2C) is not reached but said target effect (O) is obtained, the emission of energetic radiation (R) on said target zone (C) is stopped. The method of claim 1, further comprising the steps of: A') input into said controller device (13) of predetermined secondary energy thresholds (E4S1, E4S2, E4Si...E4Sn) respectively associated with each of said zones (SI, S2...Sn); B') measurement and recording in real time, by said measuring and analysis device (12), of the real collateral energy (E3Si), generated at the level of at least one zone (Si) of said plurality of zones (SI, S2.. .Sn) which is adjacent to said target zone (C), said real collateral energy (E3Si) being generated by the energetic radiations (R) irradiating said target zone (C); C') transmission of the measurement of said collateral real energy (E3Si) to said controller device (13); D') real-time control of said emitting device (11) by said controller device (13) during the irradiation process, taking into account the measurement of said real collateral energy (E3Si), the measurement of said real collateral energy (E3Si) being compared to the predetermined secondary energy threshold (E4Si) associated with the at least one zone (Si) of said plurality of zones (SI, S2...Sn) which is adjacent to said target zone (C), so that: if said secondary energy threshold (E4Si) of said at least one zone (Si) adjacent to said target zone (C) is reached, the power and / or the intensity of said energy radiation (R) irradiating said target zone (C) are modulated to reduce said collateral real energy (E3Si).

3. Method according to claim 1 or 2, wherein said target area (C) corresponds to the entire surface (S).

4. Method according to any one of claims 1 to 3, wherein said emitting device (11) is fixed and chosen from a matrix comprising a plurality of independent emitting sources (111) and an emitting source associated with an optical galvanometer.

5. The method of claim 4, wherein when said emitting device (11) is a matrix comprising a plurality of independent emitting sources (111), said independent emitting sources (111) are LEDs.

6. Method according to any one of claims 1 to 3, wherein said emitting device (11) is mobile, such as a mobile source on board an axis.

7. Method according to any one of claims 1 to 6, wherein said measuring and analysis device (12) is a thermal and / or radiative imaging sensor, associated with an image analysis module.

8. A method according to any one of claims 1 to 7, wherein said controller device (13) is a Human-Machine interface.

9. A method according to any one of claims 1 to 8, wherein said energy radiations (R) are chosen from visible light, infrared, gamma, ultraviolet, laser radiations, microwaves, X-rays and convective or conductive thermal deployment.

10. System (1) for controlled selective irradiation of a target area (C) of a surface (S) of a layer of material, such as a layer of varnish or a layer of a material of a semiconductor, said surface (S) being segmented into a plurality of zones (SI, S2, Si...Sn), said system (1) implementing the method according to any one of claims 1 to 9, comprising: - an emitting device (11), configured to irradiate said target area (C) with energetic radiation (R), - at least one measuring and analyzing device (12), configured to measure the actual energy (E1C) generated by the energetic radiation (R) at said target area (C) and the actual energy collected lateral (E3Si) generated at at least one area (Si) of said plurality of areas (SI, S2.. .Sn) which is adjacent to said target area (C), as well as to analyze the actual effect (A1C) obtained at said irradiated target area (C), - a controller device (13), configured to receive predetermined main (E2S1, E2S2...E2Sn) and secondary (E4S1, E4S2, E4Si...E4Sn) energy thresholds respectively associated with each of said zones (SI, S2....Sn) and a target effect (O) to be obtained, as well as to receive the measurement of said real energy (E1C) and of said collateral real energy (E3Si), as well as the analysis of said real effect (A1C), said controller device (13) comprising means for comparing said real energy measurement (E1C) with the predetermined main energy threshold (E2C) associated with said target zone (C), said measurement of the collateral real energy (E3Si) with the secondary predetermined energy threshold (E4Si) of the at least one zone (Si) adjacent to said target zone (C), and said analysis of the real effect (A1C) with said target effect (O), said controller device (13) being further configured to control said emitting device (11) in real time during the irradiation process by stopping the emission of said energetic radiation (R), and / or by modulating the power and / or the intensity of said energetic radiation (R), and / or by selective modulation of the zones irradiated.

11. The system of claim 10, wherein said measuring and analyzing device (12) comprises: -at least one measuring and recording means (M) configured to measure said real energy (E1C) generated by the energetic radiation (R) at said target zone (C) and said collateral real energy (E3Si) at at least one zone (Si) adjacent to said target zone (C), and -at least one analysis and recording means (A) configured to analyze said real effect (A1C) obtained at the level of said irradiated target zone (C).

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