Substrate processing method and reforming unit

JP2024175399APending Publication Date: 2024-12-18USHIO INC
View PDF 6 Cites 0 Cited by

Patent Information

Application Number
JP2023093165
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-06-06
Publication Date
2024-12-18

Smart Images

  • Figure 00000000_0000_ABST
    Figure 00000000_0000_ABST
Patent Text Reader

Abstract

To provide a substrate processing method for improving etching resistance of a side wall to obtain an expected fine pattern.SOLUTION: A substrate processing method includes: irradiating, with vacuum-ultraviolet light, an ALD film deposited on a substrate having a solid structure on a side wall of the ALD film along the solid structure to reform the ALD film; etch-backing the ALD film to leave the side wall of the ALD film along the solid structure; and etching the substrate with the ALD film that is reformed and etch-backed to be left as an etching mask.SELECTED DRAWING: Figure 1C
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Semiconductor production unit and manufacture of semiconductor device

    JP1993343336A

  • Modifying method of film to be treated and its device

    JP2000087247A

  • Semiconductor device and method of manufacturing the same

    JP2010141281A

  • DEVICE AND METHOD FOR DEPOSITING SiC AND SiCN FILM BY CROSS METATHESIS REACTION USING ORGANIC METAL CO-REACTANT

    JP2014143416A

  • Doped ald film for semiconductor patterning application

    JP2018061007A