Method of forming metallic film, and film forming device therefor

Abstract

To decrease defective forming of a metallic film, resulting from crystals adhering to a wall face of a through-part of a masking material.SOLUTION: The method of forming the metallic film, includes applying a voltage between an anode 11 present in a casing 15 and a substrate B to form a metallic film F derived from a metallic ion in a predetermined pattern on the substrate B while continuing a pressing step S2, and subsequently supplying a through-part 68 of a masking material 60 with a dissolving liquid W composed of water or a plating liquid to dissolve a crystal C of a composition of the plating liquid L, sticking to a wall face 68a forming the through-part 68.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a film-forming method and a film-forming apparatus for forming a metal film with a predetermined pattern on the surface of a substrate.

Background Art

[0002] Conventionally, metal has been deposited on the surface of a substrate by electrolytic plating to form a metal film (see, for example, Patent Document 1). The film-forming apparatus includes a container for storing a plating solution. An opening is formed in the container, and the opening is sealed with an electrolyte membrane. The film-forming apparatus further includes a pressing mechanism that presses the substrate with the electrolyte membrane by the hydraulic pressure of the plating solution.

[0003] Here, when a metal underlayer with a predetermined pattern is formed on the surface of the substrate, a voltage is applied between the anode and the substrate while pressing the substrate with the hydraulic pressure of the electrolyte membrane. Thereby, a metal film with a predetermined pattern can be formed on the underlayer. However, when a substrate does not have an underlayer with a predetermined pattern, for example, it is also assumed to use a masking material shown in Patent Document 2.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, when forming a film using the masking material described in Patent Document 2, the liquid pressure of the plating solution presses the substrate with the electrolyte membrane. As a result, the plating solution that seeps out from the electrolyte membrane (leachate) may dry at the penetration points of the masking material and crystallize on the walls of those penetration points. Since the plating solution crystallizes with air trapped inside, attempting to form a metal film in this state causes the crystals attached to the penetration points to dissolve, and air to accumulate in those points. This air can cause defects in the formation of the metal film.

[0006] The present invention has been made in view of these problems, and its object is to provide a method and apparatus for forming a metal film that can reduce defects in metal film formation caused by crystals adhering to the wall surface of the penetration portion of the masking material. [Means for solving the problem]

[0007] In view of the above-mentioned problems, the present invention provides a method for forming a metal film, comprising: forming a metal film having a predetermined pattern on a substrate by electroplating with a masking material sandwiched between an electrolyte membrane and a substrate, wherein the method includes: a pressing step in which the substrate is covered with the masking material having perforations of a predetermined pattern formed thereon, and the substrate is pressed by the masking material through the electrolyte membrane by the liquid pressure of the plating solution sealed inside the containment by the electrolyte membrane; a film formation step in which, while continuing the pressing step, a voltage is applied between the anode inside the containment and the substrate to allow metal ions contained in the plating solution to pass through the electrolyte membrane, thereby forming a metal film derived from the metal ions on the substrate in the predetermined pattern; and a dissolving step in which, after the film formation step, water or the plating solution is supplied to the perforations of the masking material to dissolve crystals of the composition of the plating solution that have adhered to the wall surface forming the perforations.

[0008] In a more preferred embodiment, the process includes a separation step after the film formation step in which the masking material is separated from the substrate, and after the separation step, in the dissolution step, the water or the plating solution is sprayed onto the masking material from the substrate side toward the masking material. In another preferred embodiment, in the dissolution step, after releasing the pressure of the masking material on the substrate, the water or the plating solution is supplied between the electrolyte membrane and the masking material while the masking material is in contact with the substrate.

[0009] The metal film deposition apparatus according to the present invention is a film deposition apparatus for depositing a metal film having a predetermined pattern on a substrate by electroplating with a masking material sandwiched between an electrolyte membrane and a substrate, wherein the film deposition apparatus comprises: a container containing a plating solution containing metal ions for film deposition, the plating solution being sealed with the electrolyte membrane; a masking material attached to the container at a position opposite to the electrolyte membrane, having perforations of the predetermined pattern formed thereon and covering the substrate; a pressing mechanism that applies the liquid pressure of the plating solution in the container to the electrolyte membrane, thereby pressing the substrate with the masking material through the electrolyte membrane; an anode housed in the container and spaced apart from the electrolyte membrane; a power supply that applies a voltage between the anode and the substrate while the substrate is pressed by the pressing mechanism; and a dissolving apparatus that, after the metal film deposition, supplies water or the plating solution to the perforations of the masking material to dissolve crystals of the composition of the plating solution adhering to the wall surface forming the perforations.

[0010] In a more preferred embodiment, the dissolving apparatus includes a separation device for separating the masking material from the substrate, wherein after the masking material has been separated from the substrate by the separation device, the dissolving apparatus sprays the water or the plating solution onto the masking material from the substrate side toward the masking material. In another preferred embodiment, after releasing the pressure of the masking material on the substrate, the dissolving apparatus supplies the water or the plating solution between the electrolyte membrane and the masking material while the masking material is in contact with the substrate. [Effects of the Invention]

[0011] According to the present invention, it is possible to reduce defects in metal film formation caused by crystals of the plating solution adhering to the wall surface of the penetration portion of the masking material. [Brief explanation of the drawing]

[0012] [Figure 1] (a) is a schematic cross-sectional view showing an example of a metal film deposition apparatus according to the first embodiment of the present invention, (b) is a schematic perspective view of a screen mask, and (c) is a partially enlarged cross-sectional view along line AA of (b). [Figure 2] (a) is a plan view showing the position of the nozzle of the dissolution apparatus, (b) is a partially enlarged cross-sectional view along line BB of (a), and (c) and (d) are variations of (b). [Figure 3] This is a flowchart illustrating an example of a method for forming a metal film according to an embodiment of the present invention. [Figure 4] (a) is a schematic cross-sectional view illustrating the film formation process shown in Figure 2, and (b) is an enlarged cross-sectional view illustrating the dissolution process. [Figure 5] (a) is a schematic diagram illustrating the film deposition process using a film deposition apparatus related to the modified example shown in Figure 1(a), and (b) is a schematic diagram illustrating the dissolution process. [Modes for carrying out the invention]

[0013] First, a film deposition apparatus 1 used in a metal film deposition method according to an embodiment of the present invention will be described. As shown in Figure 1, the film deposition apparatus 1 is a film deposition apparatus that deposits a metal film F of a predetermined pattern P onto a substrate B by electroplating with a masking material 60 sandwiched between an electrolyte membrane 13 and a substrate B. Specifically, the film deposition apparatus 1 comprises an anode 11, an electrolyte membrane 13, and a power supply 14 that applies a voltage between the anode 11 and the substrate B.

[0014] The film deposition apparatus 1 comprises a container 15 containing an anode 11 and a plating solution L, a mounting table 40 on which the substrate B is placed, and a masking material 60 integrally attached to the container 15. Of the masking material 60, the screen mask 62, which will be described later, is attached to the container 15 at a position facing the electrolyte membrane 13.

[0015] The film deposition apparatus 1 is equipped with a linear actuator 70 for raising and lowering the housing 15. The linear actuator 70 is a moving device that moves the housing 15 so that the screen mask 62 moves toward and away from the substrate B. The linear actuator 70 corresponds to the "separation device" in this invention that separates the masking material 60 from the substrate B. The linear actuator 70 has a rod 72 that moves linearly with respect to the main body 71, and the housing 15 is fixed to the tip of the rod 72. In this embodiment, for the sake of explanation, the electrolyte membrane 13 is placed below the anode 11, and the masking material 60 and substrate B are placed further below it. The linear actuator 70 is an electric actuator that converts the rotational motion of a motor into linear motion using a ball screw or the like (not shown).

[0016] Substrate B functions as a cathode. Substrate B is a plate-shaped substrate. In this embodiment, substrate B is a rectangular substrate. Of the surface of substrate B, the surface facing the electrolyte membrane 13 (screen mask 62) is the film-forming surface Ba that functions as a cathode. Substrate B may be made of a metal material such as aluminum or copper. When forming a wiring pattern from a metal film F, substrate B is a substrate in which an underlayer of copper or the like is formed on the surface of an insulating substrate such as resin. In this case, after forming the metal film F, the underlayer other than the part in which the metal film F is formed is removed by etching or the like. This makes it possible to form a wiring pattern of metal film F on the surface of the insulating substrate.

[0017] The anode 11 is, as an example, a non-porous anode made of the same metal as the metal of the metal film. The anode 11 has a block shape or a flat plate shape. The anode 11 is housed in the container 15 and is arranged so as to be separated from the electrolyte membrane 13. The anode 11 dissolves when the voltage of the power source 14 is applied. However, when forming a film only with the metal ions of the plating solution L, the anode 11 is an anode insoluble in the plating solution L.

[0018] The anode 11 is electrically connected to the positive electrode of the power source 14. The negative electrode of the power source 14 is electrically connected to the base material B via the mounting table 40, and further connected to the mesh portion 64 of the screen mask 62 described later.

[0019] The plating solution L is a solution containing the metal of the metal film to be formed in an ionic state. As an example of the metal, copper, nickel, gold, or silver can be mentioned. The plating solution L is a solution in which these metals are dissolved (ionized) with an acid such as nitric acid, phosphoric acid, succinic acid, sulfuric acid, sulfamic acid, or pyrophosphoric acid. As a solvent of the solution, for example, water, alcohol, etc. can be mentioned.

[0020] The electrolyte membrane 13 is a membrane that can be impregnated (contain) metal ions together with the plating solution L by contacting the plating solution L. The electrolyte membrane 13 is a flexible membrane. When a voltage is applied by the power source 14, the material of the electrolyte membrane 13 is not particularly limited as long as the metal ions of the plating solution L can move to the base material B side. Examples of the material of the electrolyte membrane 13 include resins having an ion exchange function such as fluorine-based resins such as Nafion (registered trademark) manufactured by DuPont. The film thickness of the electrolyte membrane 13 is preferably in the range of 5 μm to 200 μm.

[0021] The container 15 is made of a material insoluble in the plating solution L. The container 15 has a containment space 15a for containing the plating solution L. The anode 11 is placed in the containment space 15a of the container 15. An opening 15d is formed on the substrate B side of the containment space 15a. The opening 15d of the container 15 is covered with an electrolyte membrane 13, so that when the plating solution L is contained, the plating solution L in the containment space 15a is sealed by the electrolyte membrane 13.

[0022] As shown in Figures 1(a) and 4(a), the linear actuator 70 moves the housing 15 up and down (moves it) by linearly moving the rod 72 so that the electrolyte membrane 13 and the masking material 60 can move in and out of contact with each other. In this embodiment, the mounting base 40 is fixed, and the housing 15 is moved up and down by the linear actuator 70.

[0023] The housing 15 has a supply port 15b for supplying the plating solution L to the housing space 15a and a discharge port 15c for discharging the plating solution L from the housing space 15a. The supply port 15b and the discharge port 15c are formed on either side of the housing space 15a. The supply port 15b is fluidically connected to the supply pipe 51. The discharge port 15c is fluidically connected to the discharge pipe 52.

[0024] The film deposition apparatus 1 further comprises a tank 85, a supply pipe 51, a discharge pipe 52, and a circulation pump 88. As shown in Figure 1, the tank 85 contains the plating solution L. The supply pipe 51 connects the tank 85 to the container 15. The supply pipe 51 is equipped with a circulation pump 88. The circulation pump 88 supplies the plating solution L from the tank 85 to the container 15. The discharge pipe 52 connects the tank 85 to the container 15. The discharge pipe 52 is equipped with a pressure regulating valve 54. The pressure regulating valve 54 adjusts the pressure (liquid pressure) of the plating solution L in the container space 15a to a predetermined pressure.

[0025] In this embodiment, the plating solution L is drawn from the tank 85 into the supply pipe 51 by driving the circulation pump 88. The drawn-in plating solution L is pumped from the supply port 15b to the containment space 15a. The plating solution L in the containment space 15a is returned to the tank 85 via the discharge port 15c. A circulation path 50 for circulating the plating solution L can be formed between the tank 85 and the containment body 15.

[0026] Furthermore, by continuously driving the circulation pump 88, the liquid pressure of the plating solution L in the containment space 15a can be maintained at a predetermined pressure by the pressure regulating valve 54. The circulation pump 88 applies the liquid pressure of the plating solution L to the electrolyte membrane 13, and through the electrolyte membrane 13, the screen mask 62 of the masking material 60 presses the substrate B. In this embodiment, the circulation pump 88 and the pressure regulating valve 54 correspond to the "pressing mechanism" as defined in the present invention.

[0027] The masking material 60 is attached to the housing 15 on the side facing the mounting base 40 and at a position facing the electrolyte membrane 13. Specifically, the masking material 60 comprises a frame 61 and a screen mask 62. The screen mask 62 has through portions 68 formed therein according to a predetermined pattern P of the metal film F. The screen mask 62 comprises a mesh portion 64 and a mask portion 65. The screen mask 62 is a flexible mask.

[0028] The mesh portion 64 is fixed to the frame 61. The mesh portion 64 is stretched with a predetermined tension so as to cover the opening of the frame 61. Multiple openings 64c are formed in a grid pattern in the mesh portion 64. Multiple oriented wires 64a and 64b are woven into the mesh portion 64 in a mesh-like manner so as to intersect. Multiple wires 64a are arranged with gaps between them, and multiple intersecting wires 64b are also arranged with gaps between them. As a result, multiple openings 64c are formed in a grid pattern in the mesh portion 64.

[0029] The mask portion 65 is fixed to the mesh portion 64. The mask portion 65 has through portions 68 formed according to a predetermined pattern P. The mask portion 65 is the part that adheres to the substrate B during film formation due to pressure from the electrolyte membrane 13. It is preferable that the mask portion 65 undergoes compressive elastic deformation due to pressure from the electrolyte membrane 13. For example, the material of the mask portion 65 can be a resin material or a rubber material (for example, silicone rubber). A screen mask 62 having a predetermined pattern P can be manufactured using general silkscreen manufacturing techniques using emulsions, so a detailed explanation of the manufacturing method is omitted.

[0030] The screen mask 62 is fixed to the frame 61. In this embodiment, the screen mask 62 has a rectangular outer shape. Therefore, the frame 61 has a rectangular frame-like shape. Examples of materials for the frame 61 include metal materials such as stainless steel and resin materials such as polyester.

[0031] The film deposition apparatus 1 further comprises a dissolving apparatus 80 for dissolving crystals C of the composition of the plating solution L. After the metal film F is deposited, the dissolving apparatus 80 supplies a dissolving solution W, consisting of water or a plating solution, to the penetration portion 68 of the masking material 60. If the dissolving solution W is a plating solution, the plating solution L used for film deposition may be used. The dissolving apparatus 80 dissolves the crystals C adhering to the wall surface 68a that forms the penetration portion 68. After the masking material 60 is separated from the substrate B by a linear actuator 70, the dissolving apparatus 80 sprays the dissolving solution W onto the masking material 60 from the substrate B side toward the masking material 60.

[0032] Specifically, as shown in Figure 1(a), the dissolving apparatus 80 has a mounting base 40 on which multiple nozzles 81 for spraying the dissolving liquid W onto the masking material 60 are attached. As shown in Figure 2(a), the multiple nozzles 81 are arranged at intervals along the perimeter of the recess 41 of the mounting base 40. The spraying angle of the nozzles 81 is inclined with respect to the direction of movement of the housing 15 so as to be directed towards the inside of the masking material 60. Each nozzle 81 is connected to a flow path 84 of the mounting base 40. The flow path 84 is connected to a storage tank 83 containing the dissolving liquid W via a pressure pump 82. This allows the dissolving liquid W from the storage tank 83 to be pumped by the pressure pump 82, and the pumped dissolving liquid W to be sprayed from the nozzles 81 toward the masking material 60 via the flow path 84.

[0033] In this embodiment, as shown in Figure 2(b), a step is formed between the mounting base 40 and the substrate B. The step is preferably in the range of 5 to 100 μm. Specifically, the film-forming surface Ba of the substrate B is recessed into the recess 41 more than the surface 40a of the mounting base 40. This suppresses the liquid film of the dissolving solution W adhering to the surface of the substrate B when the dissolving solution W is sprayed, thereby suppressing oxidation and discoloration of the metal film F or the surface of the substrate B.

[0034] For example, as shown in Figure 2(c), a groove 42 may be formed along the periphery of the recess 41 of the mounting table 40, or as shown in Figure 2(d), an inclined surface Bc may be formed on the periphery of the base material B so that a groove is formed between the base material B and the mounting table 40 when the base material B is housed in the recess 41 of the mounting table 40. Alternatively, during film formation, the surface 40a of the mounting table 40 and the film-forming surface Ba of the base material B may be placed on the same plane, and when the dissolving solution W is sprayed, the base material B housed in the recess 41 of the mounting table 40 may be submerged in the mounting table 40 so as shown in Figure 2(b). In either case, when the dissolving solution W is sprayed, the liquid film of the dissolving solution W adhering to the surface of the base material B is suppressed, and a stable liquid film can be formed.

[0035] The film deposition apparatus 1 further includes a control device 90. The control device 90 controls the driving of the linear actuator 70, the energization of the power supply 14, and the driving of the pressure pump 82 and the circulation pump 88 in the following film deposition method. However, the film deposition method shown below may be performed manually or under the control of the control device 90.

[0036] The following describes a method for forming a metal film. In this method, a screen mask 62 with a predetermined pattern P formed on it is sandwiched between an electrolyte film 13 and a substrate B, and a metal film F with the predetermined pattern P is formed on the surface of the substrate B by electroplating.

[0037] First, in the placement step S1, the base material B is placed on the placement table 40. Specifically, the base material B is housed in the recess 41 of the placement table 40. Next, in the pressing step S2, the linear actuator 70 is driven to move the housing 15 toward the placement table 40, and the masking material 60 is brought into contact with the surface of the base material B. This allows the screen mask 62, which has a predetermined pattern P through-hole 68 formed on it, to be placed on the base material B. As shown in Figure 4(a), with the base material B covered by the screen mask 62, the liquid pressure of the plating solution L sealed inside the housing 15 by the electrolyte membrane 13 presses the base material B with the screen mask 62 through the electrolyte membrane 13. This supplies the plating solution L to the housing space 15a, and the pressure of the plating solution L in the housing space 15a can be set to the pressure set by the pressure regulating valve 54. As a result, the liquid pressure of the plating solution L presses the base material B with the screen mask 62 through the electrolyte membrane 13.

[0038] Next, the film formation process S3 is performed. Here, as shown in Figure 4(a), with the substrate B pressed by the screen mask 62, the voltage of the power supply 14 is applied between the anode 11, which is in contact with the plating solution L, and the substrate B. As a result, metal ions contained in the plating solution L pass through the electrolyte membrane 13, and a metal film F derived from the metal ions is formed on the substrate B in a predetermined pattern P.

[0039] In this way, by driving the circulation pump 88 in the circulation path 50 between the tank 85 where the plating solution L is stored and the containment 15, the plating solution L can be circulated while a metal film F is formed. Since the liquid pressure of the plating solution L in the containment space 15a also acts on the plating solution filled in the through-hole 68, a homogeneous metal film F can be formed under constant liquid pressure. During film formation, when a voltage is applied, a portion of the plating solution L passes through the electrolyte membrane 13 along with the metal ions passing through the electrolyte membrane 13, so that moisture is stably maintained in the through-hole 68 of the screen mask 62. This allows metal ions to be stably deposited on the surface of the substrate B. In this embodiment, a heater for heating the plating solution L may be provided in either the circulation path 50, the tank 85, or the containment 15. This allows the plating solution L to be heated and the rate of metal film formation F to be increased.

[0040] Next, in the film formation process S3, a metal film F of a predetermined thickness is formed by energizing for a predetermined time, and then the separation process S4 is performed. In this process, the drive of the circulation pump 88 is stopped, and the liquid pressure of the plating solution L in the container 15 is relieved (the liquid pressure is reduced to atmospheric pressure). The linear actuator 70 is driven to move the container 15 away from the mounting table 40, and the electrolyte membrane 13 is separated from the masking material 60. Since the masking material 60 is attached to the container 15, even if the weight of the plating solution L acts on the electrolyte membrane 13, excessive deformation of the electrolyte membrane 13 can be prevented by the screen mask 62. Alternatively, as shown in Figure 1(a), the plating solution L may be discharged from the container space 15a of the container 15 before the separation process S4 is performed.

[0041] Next, the dissolution process S5 is performed. In this process, the dissolving solution W is supplied to the penetration portion 68 of the masking material 60, thereby dissolving the crystals C, which are composed of the plating solution and are attached to the wall surface 68a forming the penetration portion 68. Specifically, the pressure pump 82 is driven, and the dissolving solution W is sprayed onto the masking material 60 from the substrate B side through a plurality of nozzles 81. As a result, the dissolving solution W is supplied to the penetration portion 68, the dissolving solution W is held in the penetration portion 68, and the crystals C attached to the penetration portion 68 can be dissolved. After that, the substrate B is removed from the mounting table 40, and a metal film F is formed on a new substrate B. In this embodiment, since the dissolving solution W is a plating solution or water (including, for example, water droplets), even if the crystals C are dissolved in this dissolving solution W, the metal film F can be stably formed on the next substrate B.

[0042] In this embodiment, the electrolyte membrane 13 presses against the substrate B due to the liquid pressure of the plating solution L. As a result, the plating solution L that seeps out from the electrolyte membrane 13 may dry at the penetration portion 68 of the masking material 60 and crystallize on the wall surface 68a of the penetration portion 68. However, although the plating solution L crystallizes with air incorporated inside, in the dissolution step S5, the dissolution device 80 supplies a dissolving solution W, consisting of water or the plating solution, to the penetration portion 68 of the masking material 60, thereby dissolving the crystals C attached to the wall surface 68a that forms the penetration portion 68. This prevents air generated by the dissolution of crystals C during film formation from accumulating in the penetration portion 68 and causing film formation defects.

[0043] A modified example of this embodiment will be described with reference to Figures 5(a) and 5(b). In this modified example, the screen mask 62 of the masking material 60 is attached to the housing 15 at a position facing the electrolyte membrane 13 such that a gap is formed between it and the electrolyte membrane 13. The frame 61 of the masking material 60 has a supply channel 15e for supplying the dissolving solution W and a discharge channel 15f for discharging the dissolving solution W formed in the space within the frame 61.

[0044] The dissolution apparatus 80, after the metal film formation by the control device 90 is completed and the pressure of the masking material 60 on the substrate B is released, supplies the dissolution liquid W into the gap between the electrolyte membrane 13 and the masking material 60 while the masking material 60 is in contact with the substrate B. Specifically, the dissolution apparatus 80 has a storage tank 83 for containing the dissolution liquid W and a pump 82 for pumping the dissolution liquid W from the storage tank 83. The pump 82 is connected to the supply channel 15e via an on-off valve 58 and pumps the dissolution liquid W into the gap S between the electrolyte membrane 13 and the masking material 60. The dissolution apparatus 80 further includes a suction pump 86 connected to the discharge channel 15f for sucking the dissolution liquid W pumped into the gap between the electrolyte membrane 13 and the masking material 60, and a recovery tank 87 for recovering the sucked dissolution liquid W.

[0045] In this modified example, during the film formation process S3, the plating solution L inside the container 15 permeates the electrolyte membrane 13 and fills the gap S between the electrolyte membrane 13 and the masking material 60. Subsequently, in this modified example, unlike the flow shown in Figure 4, the dissolution process S5 is performed after the film formation process S3 and before the separation process S4. Specifically, in the dissolution process S5, after releasing the pressure of the masking material 60 on the substrate B, the dissolution solution W is supplied between the electrolyte membrane 13 and the masking material 60 while the masking material 60 is in contact with the substrate B. Specifically, the pressure pump 82 is driven to supply the dissolution solution W from the container tank 83 between the electrolyte membrane 13 and the masking material 60, dissolving the crystals C attached to the wall surface 68a of the penetration portion 68. Furthermore, the suction pump 86 is driven to collect the dissolution solution W that has been pumped into the gap between the electrolyte membrane 13 and the masking material 60 into the recovery tank 87. As a result, it is possible to suppress the accumulation of air in the through-holes 68 during the formation of the metal film F. [Examples]

[0046] Examples of the present invention are described below. [Example 1] A copper plate measuring 15 cm x 15 cm and 0.9 mm thick was prepared as the substrate for film deposition. This substrate was subjected to cathodic electrolytic degreasing and washing with pure water for one minute each, followed by pickling with 10% dilute sulfuric acid and washing with pure water for one minute each. Next, a copper film was deposited using the film deposition apparatus shown in Figure 1. The plating solution used was an aqueous copper sulfate solution containing 1 mol / L CuSO4 and 0.2 mol / L H2SO4. DuPont's Nafion® was used as the electrolyte membrane, phosphorus-containing copper was used as the anode, and a screen mask with a total area of ​​1800 mm² was used. 2 A masking material with a perforated portion was used. The deposition conditions were a 2 mm electrode distance between the anode and the substrate, a liquid pressure of 0.6 MPa, and a current of 7 ASD. This deposition process was repeated twice, and dissolution using a dissolution apparatus was performed between depositions.

[0047] [Examples 2 and 3] A copper film was formed on the surface of the substrate in the same manner as in Example 1. The difference between Example 2 and Example 1 is that, unlike the film formation apparatus in Figure 1, the nozzle was not placed on the mounting table but between the mounting table and the masking material, and the dissolution process was carried out. The difference between Example 3 and Example 1 is that the dissolution process was carried out using the film formation apparatus in Figure 5.

[0048] [Comparative Example] A copper film was formed on the surface of the substrate, similar to the example. The difference from Example 1 is that the dissolution process was not performed.

[0049] In the comparative example, defects occurred in the copper film during the second film deposition, but no defects were observed in the copper film in Examples 1 to 3. [Explanation of Symbols]

[0050] 1: Film deposition apparatus, 13: Electrolyte membrane, 14: Power supply, 15: Container, 60: Masking material, 68: Through-hole, 68a: Wall surface, 70: Linear actuator (separation device), 80: Dissolving apparatus, L: Plating solution, C: Crystal, W: Dissolving solution, F: Metal film, P: Predetermined pattern

Claims

1. A film formation method in which a metal film having a predetermined pattern is formed on a substrate by electroplating with a masking material sandwiched between an electrolyte membrane and a substrate, The aforementioned film formation method is A pressing step is performed in which the masking material, with its predetermined pattern of perforations formed thereon, covers the substrate, and the liquid pressure of the plating solution sealed within the containment by the electrolyte membrane presses the masking material against the substrate through the electrolyte membrane. A film formation step is performed in which, while continuing the pressing step, a voltage is applied between the anode in the containment and the substrate, thereby allowing metal ions contained in the plating solution to pass through the electrolyte membrane, and a metal film derived from the metal ions is formed on the substrate in the predetermined pattern. A method for forming a metal film, characterized by comprising a dissolving step, after the film formation step, by supplying water or a plating solution to the through-hole portion of the masking material to dissolve crystals of the composition of the plating solution that have adhered to the wall surface forming the through-hole portion.

2. The process after the film formation step includes a separation step of separating the masking material from the substrate, The method for forming a metal film according to claim 1, characterized in that, after the separation step, in the dissolution step, the water or the plating solution is sprayed onto the masking material from the substrate side toward the masking material.

3. The method for forming a metal film according to claim 1, characterized in that, in the dissolution step, after releasing the pressure of the masking material on the substrate, water or the plating solution is supplied between the electrolyte membrane and the masking material while the masking material is in contact with the substrate.

4. A film deposition apparatus for forming a metal film having a predetermined pattern on a substrate by electroplating, with a masking material sandwiched between the electrolyte membrane and the substrate, The aforementioned film deposition apparatus is A container containing a plating solution containing metal ions for film formation, with the plating solution sealed by the electrolyte membrane, A masking material is attached to the container at a position opposite to the electrolyte membrane, and has a perforated portion of the predetermined pattern formed therein, covering the substrate. A pressing mechanism that applies the liquid pressure of the plating solution in the containment to the electrolyte membrane, thereby pressing the substrate with the masking material through the electrolyte membrane, An anode housed in the aforementioned container and spaced apart from the electrolyte membrane, With the substrate being pressed by the pressing mechanism, a power supply is provided to apply a voltage between the anode and the substrate. A metal film forming apparatus characterized by comprising a dissolving device that, after forming the metal film, supplies water or a plating solution to the through-holes of the masking material to dissolve crystals of the composition of the plating solution that have adhered to the wall surface forming the through-holes.

5. Includes a separation device for separating the masking material from the substrate, The metal film forming apparatus according to claim 4, characterized in that the dissolving apparatus, after the masking material has been separated from the substrate by the separating apparatus, sprays the water or the plating solution onto the masking material from the substrate side toward the masking material.

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