Method for manufacturing display device

Abstract

To provide a method for manufacturing a display device capable of suppressing deterioration in reliability and manufacturing cost.SOLUTION: A method for manufacturing a display device includes the steps of: forming a transparent inorganic layer over a display region on a transparent substrate and a peripheral region surrounding the display region; forming a metal layer on the inorganic layer in the peripheral region; forming an organic layer on the inorganic layer and the metal layer; preparing a treated substrate on which a protective film is attached on the organic layer located at least immediately above the metal layer; and applying a laser beam from a substrate side toward the metal layer. In the step of applying the laser beam, a plurality of holes penetrating the metal layer and the organic layer are formed, and the plurality of holes formed in the metal layer is arranged in a pattern corresponding to identification information.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] An embodiment of the present invention relates to a method for manufacturing a display device. [Background technology]

[0002] In recent years, display devices that use organic light-emitting diodes (OLEDs) as display elements have been put to practical use. Laser processing may be performed during the manufacturing process of such display devices. During laser processing, when a workpiece is irradiated with laser light, dust is generated at the irradiated area. If this dust remains attached to the product, it may lead to a decrease in the reliability of the display device. In addition, the dust may fly and contaminate the manufacturing equipment.

[0003] Furthermore, when collecting dust with a dust collector, the manufacturing equipment must have a complex configuration, which may increase the manufacturing cost. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 9-175025 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the present invention is to provide a method for manufacturing a display device that can suppress a decrease in reliability and reduce manufacturing costs. [Means for solving the problem]

[0006] According to one embodiment, a method for manufacturing a display device includes the steps of: A transparent inorganic layer is formed over a display area on a transparent substrate and a peripheral area surrounding the display area, a metal layer is formed on the inorganic layer in the peripheral area, an organic layer is formed on the inorganic layer and the metal layer, a processing substrate is prepared in which a protective film is attached at least to the organic layer located directly above the metal layer, and laser light is irradiated from the substrate side toward the metal layer, and in the laser light irradiating process, a plurality of holes are formed that penetrate the metal layer and the organic layer, and the plurality of holes formed in the metal layer are arranged in a pattern corresponding to identification information.

[0007] According to one embodiment, a method for manufacturing a display device includes the steps of: A transparent inorganic layer is formed across multiple panel sections on a transparent substrate, a metal layer is formed on the inorganic layer in a peripheral area surrounding a display area in each of the panel sections, an organic layer is formed on the inorganic layer and the metal layer, a processing substrate is prepared in which a protective film is attached at least on the organic layer located directly above the metal layer, and laser light is irradiated from the substrate side toward the metal layer, and in the laser light irradiating process, a plurality of holes are formed that penetrate the metal layer and the organic layer, and the plurality of holes formed in the metal layer are arranged in a pattern corresponding to identification information.

[0008] According to one embodiment, a method for manufacturing a display device includes the steps of: A metal layer is formed above a substrate, a protective film is placed directly on the metal layer, and laser light is irradiated from the substrate side toward the metal layer, and in the process of irradiating the laser light, a plurality of holes are formed in the metal layer arranged in a pattern corresponding to identification information. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram showing an example of the configuration of a display device DSP. [Diagram 2] FIG. 2 is a diagram showing an example of the layout of the subpixels SP1, SP2, and SP3. [Diagram 3] FIG. 3 is a schematic cross-sectional view of the display device DSP taken along the line III-III in FIG. [Figure 4]FIG. 4 is a diagram showing an example of the configuration of the tag TG. [Diagram 5] FIG. 5 is a schematic cross-sectional view of the display device DSP taken along the line VV in FIG. [Figure 6] FIG. 6 is a flow chart for explaining an example of a method for manufacturing the display device DSP. [Figure 7] FIG. 7 is a diagram for explaining the step of preparing a substrate to be processed. [Figure 8] FIG. 8 is a diagram for explaining the step of cutting the processing substrate. [Figure 9] FIG. 9 is a diagram for explaining the step of irradiating laser light. [Figure 10] FIG. 10 is a diagram for explaining the step of irradiating laser light. [Figure 11] FIG. 11 is a diagram for explaining the step of irradiating laser light. [Figure 12] FIG. 12 is a view for explaining the step of peeling off the protective film. [Figure 13] FIG. 13 is a view for explaining the step of peeling off the protective film. [Figure 14] FIG. 14 is a flow chart for explaining another example of the manufacturing method of the display device DSP. [Figure 15] FIG. 15 is a flow chart for explaining another example of the manufacturing method of the display device DSP. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] An embodiment will be described with reference to the drawings. The disclosure is merely an example, and those who are skilled in the art can easily conceive of appropriate modifications while maintaining the gist of the invention are naturally included in the scope of the present invention. In addition, the drawings may be schematic in width, thickness, shape, etc. of each part compared to the actual embodiment in order to make the explanation clearer, but they are merely examples and do not limit the interpretation of the present invention. In addition, in this specification and each figure, components that perform the same or similar functions as those described above with respect to the previous figures are given the same reference numerals, and duplicate detailed explanations may be omitted as appropriate.

[0011] In addition, in the drawings, an X-axis, a Y-axis, and a Z-axis that are perpendicular to each other are shown as necessary to facilitate understanding. The direction along the X-axis is called the first direction, the direction along the Y-axis is called the second direction, and the direction along the Z-axis is called the third direction. Viewing various elements parallel to the third direction Z is called a plan view.

[0012] The display device according to this embodiment is an organic electroluminescence display device having, for example, an organic light-emitting diode (OLED) as a display element, and can be mounted on televisions, personal computers, in-vehicle devices, tablet terminals, smartphones, mobile phone terminals, etc.

[0013] 1 is a diagram showing a configuration example of a display device DSP. The display device DSP has a display area DA for displaying an image and a peripheral area SA surrounding the display area DA, on an insulating substrate 10. The substrate 10 is a glass substrate. Note that the material of the substrate 10 is not limited to a glass substrate, and may be any material that has a high transmittance for ultraviolet wavelengths.

[0014] The display area DA includes a plurality of pixels PX arranged in a matrix in a first direction X and a second direction Y. Each pixel PX includes a plurality of sub-pixels SP. In one example, the pixel PX includes a red sub-pixel SP1, a green sub-pixel SP2, and a blue sub-pixel SP3. The pixel PX may include four or more sub-pixels including sub-pixels of other colors such as white in addition to the above three colors.

[0015] The peripheral area SA includes a tag TG and a number of terminals TM arranged in a first direction X. In the example of FIG. 1, the tag TG and the number of terminals TM are located on the arrow side of the second direction Y with respect to the display area DA. The tag TG has, for example, a pattern corresponding to identification information of the display device DSP, as will be described in detail later. The pattern corresponding to the identification information is formed as a two-dimensional code. Such a pattern is marked with a laser beam, which will be described later. The number of terminals TM are connected to a flexible printed circuit board, an IC chip, and the like. In addition, the number of terminals TM are electrically connected to various wirings (scanning lines GL, signal lines SL, power lines PL, etc.) for driving the subpixels SP.

[0016] The subpixel SP includes a pixel circuit 1 and a display element 20 driven by the pixel circuit 1. The pixel circuit 1 includes a pixel switch 2, a drive transistor 3, and a capacitor 4. The pixel switch 2 and the drive transistor 3 are switching elements constituted by, for example, thin film transistors.

[0017] In the pixel switch 2, the gate electrode is connected to the scanning line GL. One of the source electrode and drain electrode of the pixel switch 2 is connected to the signal line SL, and the other is connected to the gate electrode of the drive transistor 3 and the capacitor 4. In the drive transistor 3, one of the source electrode and drain electrode is connected to the power line PL and the capacitor 4, and the other is connected to the anode of the display element 20. Note that the configuration of the pixel circuit 1 is not limited to the example shown in the figure.

[0018] The display element 20 is an organic light-emitting diode (OLED) serving as a light-emitting element. For example, the subpixel SP1 includes a display element 20 that emits light corresponding to a red wavelength, the subpixel SP2 includes a display element 20 that emits light corresponding to a green wavelength, and the subpixel SP3 includes a display element 20 that emits light corresponding to a blue wavelength. The configuration of the display element 20 will be described later.

[0019] 2 is a diagram showing an example of the layout of subpixels SP1, SP2, and SP3. Here, attention is focused on four pixels PX surrounded by dashed lines. In each pixel PX, the subpixels SP1, SP2, and SP3 are aligned in this order in the first direction X. That is, in the display area DA, a column consisting of a plurality of subpixels SP1 aligned in the second direction Y, a column consisting of a plurality of subpixels SP2 aligned in the second direction Y, and a column consisting of a plurality of subpixels SP3 aligned in the second direction Y are aligned in the first direction X.

[0020] Partition walls 5 are disposed at the boundaries between the sub-pixels SP1, SP2, and SP3. In the example of FIG. 2, the partition walls 5 are formed in a lattice shape having a plurality of partition walls 5X located between the sub-pixels SP adjacent to each other in the first direction X and a plurality of partition walls 5Y located between the sub-pixels SP adjacent to each other in the second direction Y. In the example of FIG. 2, the partition walls 5X extend parallel to the second direction Y, and the partition walls 5Y extend parallel to the first direction X. These partition walls 5X and 5Y form an opening OP in each of the sub-pixels SP1, SP2, and SP3. Such an opening OP corresponds to the light-emitting region of each sub-pixel SP. In the example shown in the figure, the area of ​​the opening OP of each sub-pixel SP is the same.

[0021] The layout of the subpixels is not limited to the example shown in the figure. For example, the areas of the openings OP of the subpixels SP may be different from each other. The subpixels SP1, SP2, and SP3 do not have to be aligned in a row. The subpixels SP of different colors may be aligned in the second direction Y.

[0022] Fig. 3 is a schematic cross-sectional view of the display device DSP taken along line III-III in Fig. 2. In Fig. 3, a driving transistor 3 and a display element 20 are shown as elements arranged in the subpixels SP1, SP2, and SP3, and other elements are omitted from the illustration.

[0023] The display device DSP includes the above-mentioned substrate 10, insulating layers 11, 12, and 13, the above-mentioned partition wall 5X, and a sealing layer 14. The insulating layers 11, 12, and 13 are stacked in the third direction Z on the substrate 10. For example, the insulating layers 11 and 12 are inorganic layers made of an inorganic material, and the insulating layer 13 and the partition wall 5X are organic layers made of an organic material. The partition wall 5Y shown in FIG. 2 is formed integrally with the partition wall 5X by using the same material as the partition wall 5X.

[0024] The driving transistor 3 of each subpixel includes a semiconductor layer 30 and electrodes 31, 32, and 33. The electrode 31 corresponds to a gate electrode. One of the electrodes 32 and 33 corresponds to a source electrode, and the other corresponds to a drain electrode. The semiconductor layer 30 is disposed between the substrate 10 and the insulating layer 11. The electrode 31 is disposed between the insulating layers 11 and 12. The electrodes 32 and 33 are disposed between the insulating layers 12 and 13, and are in contact with the semiconductor layer 30 through contact holes penetrating the insulating layers 11 and 12. The configuration of the driving transistor 3 is not limited to the top gate type shown in the figure, and may be a bottom gate type.

[0025] The semiconductor layer 30 may be any of polycrystalline silicon, amorphous silicon, and oxide semiconductor. The electrode 31 is formed of, for example, an alloy of molybdenum and tungsten. The electrodes 32 and 33 are formed, for example, as a laminate of a titanium layer and an aluminum layer, or a laminate of a molybdenum layer and an aluminum layer.

[0026] The display element 20 includes a lower electrode LE, an organic EL layer OR, and an upper electrode UE. The lower electrode LE is an electrode disposed for each sub-pixel SP, and may be called a pixel electrode. The upper electrode UE is an electrode disposed in common to the multiple display elements 20, and may be called a common electrode. The organic EL layer OR is disposed between the lower electrode LE and the upper electrode UE.

[0027] The lower electrodes LE1, LE2, and LE3 are disposed on the insulating layer 13. The partition walls 5X1, 5X2, 5X3, and 5X4 are also disposed on the insulating layer 13. In the example of FIG. 3, the partition walls 5X1 and 5X2 cover both ends of the lower electrode LE1 in the first direction X, the partition walls 5X2 and 5X3 cover both ends of the lower electrode LE2 in the first direction X, and the partition walls 5X3 and 5X4 cover both ends of the lower electrode LE3 in the first direction X. Although not shown in the cross section of FIG. 3, the partition wall 5Y is also disposed on the insulating layer 13 like the partition wall 5X, and covers both ends of the lower electrodes LE1, LE2, and LE3 in the second direction Y. In a plan view, the lower electrodes LE1, LE2, and LE3 overlap with the openings OP shown in FIG. 2.

[0028] The lower electrodes LE1, LE2, and LE3 are each electrically connected to the electrode 33 through a contact hole penetrating the insulating layer 13. The lower electrodes LE1, LE2, and LE3 are formed of a metal material such as silver. However, the lower electrodes LE1, LE2, and LE3 may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or may be a laminate of a transparent conductive material and a metal material.

[0029] The organic EL layer OR1 is located between the partition walls 5X1 and 5X2 in the first direction X, includes a red light-emitting layer, and covers the lower electrode LE1. The organic EL layer OR2 is located between the partition walls 5X2 and 5X3 in the first direction X, includes a green light-emitting layer, and covers the lower electrode LE2. The organic EL layer OR3 is located between the partition walls 5X3 and 5X4 in the first direction X, includes a blue light-emitting layer, and covers the lower electrode LE3. Although not shown in the cross section of FIG. 3, the organic EL layers OR1, OR2, and OR3 are located between adjacent partition walls 5Y in the second direction Y. That is, the organic EL layers OR1, OR2, and OR3 are each disposed in the opening OP shown in FIG. 2 in a plan view.

[0030] Although not described in detail, each of the organic EL layers OR1, OR2, and OR3 includes functional layers such as a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer.

[0031] The upper electrode UE covers the organic EL layers OR1, OR2, and OR3 and the partition walls 5X1, 5X2, 5X3, and 5X4. The upper electrode UE is made of a metal material such as magnesium or silver. However, the upper electrode UE may be made of a transparent conductive material such as ITO or IZO.

[0032] The sealing layer 14 is disposed on the upper electrode UE. The sealing layer 14 includes an organic layer for flattening unevenness caused by the partition walls 5X1, 5X2, 5X3, and 5X4, and an inorganic layer for protecting the organic EL layers OR1, OR2, OR3, and OR4 from moisture and the like. The organic layer is formed to be thicker than, for example, the insulating layers 11, 12, and 13 and the partition walls 5X1, 5X2, 5X3, and 5X4.

[0033] FIG. 4 is a diagram showing an example of the configuration of the tag TG. In the example of Fig. 4, the tag TG is formed in a square shape. The tag TG is a metal layer located in the same layer as the electrode 31 shown in Fig. 3, or a metal layer located in the same layer as the electrodes 32 and 33, and is formed of at least one material of titanium, molybdenum, tungsten, and aluminum. In one example, the tag TG is located in the same layer as the electrode 32, etc., and is formed as a laminate of a titanium layer and an aluminum layer, or a laminate of a molybdenum layer and an aluminum layer.

[0034] The tag TG has identification information INF. The identification information INF is formed as a pattern of a plurality of holes HL penetrating the tag TG in the third direction Z. The plurality of holes HL are arranged in the first direction X and the second direction Y according to a predetermined rule to form a two-dimensional code. By reading the identification information INF with a scanner or the like, it is possible to obtain information necessary for product management, such as the product's pre-registered serial number and lot number.

[0035] FIG. 5 is a schematic cross-sectional view of the display device DSP including the tag TG taken along the line VV in FIG. The display device DSP includes insulating layers IL1 and IL2. The insulating layer IL1 is an inorganic layer made of a transparent inorganic material. The insulating layer IL1 corresponds to, for example, at least one of the insulating layers 11 and 12 in FIG. 3. The insulating layer IL2 is an organic layer made of a transparent organic material. The insulating layer IL2 corresponds to, for example, at least one of the organic layers included in the partition wall 5 in FIG. 2, the insulating layer 13 in FIG. 3, or the sealing layer 14.

[0036] The insulating layer IL1 is disposed on the substrate 10. The tag TG is disposed on the insulating layer IL1. The insulating layer IL2 is disposed on the tag TG and the insulating layer IL1. A plurality of holes HL pass through the insulating layer IL2 and the tag TG, respectively, and reach the insulating layer IL1. The holes HL do not pass through the insulating layer IL1.

[0037] Next, an example of a method for manufacturing the display device DSP will be described with reference to FIGS.

[0038] FIG. 6 is a flow chart for explaining an example of a method for manufacturing the display device DSP. The manufacturing method shown here broadly includes a step of preparing a large processing substrate MB having multiple panel portions PNL (step ST1), a step of cutting the processing substrate MB (step ST2), a step of irradiating laser light LZ (step ST3), and a step of peeling off the protective film PF (step ST4).

[0039] In step ST1, first, as shown in Fig. 7(a), a large substrate 10 is prepared (step ST11). The substrate 10 is, for example, a glass substrate.

[0040] 7(b), an insulating layer IL1, which is an inorganic layer, is formed on the substrate 10 (step ST12). The insulating layer IL1 is formed across the display area DA and the peripheral area SA on the substrate 10. The insulating layer IL1 is made of a transparent inorganic material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiON).

[0041] 7(c), a metal layer ML is formed on the insulating layer IL1 in the peripheral area SA (step ST13). In the illustrated example, at the same time as forming the metal layer ML, an electrode EL is formed on the insulating layer IL1 in the display area DA. Specifically, first, at least one metal material selected from titanium, molybdenum, tungsten, and aluminum is deposited on the insulating layer IL1 to form a metal thin film. Then, a resist is formed in the areas to be left as the electrode EL and the metal layer ML. Then, the metal thin film is etched using the resist as a mask. Then, the resist is removed. In this way, the electrode EL and the metal layer ML are formed. In other words, the electrode EL and the metal layer ML are formed using the same material and in the same process. For example, the electrode EL corresponds to the electrodes 32 and 33 in FIG. 3, and the electrode EL and the metal layer ML are formed as a laminate of a titanium layer and an aluminum layer, or a laminate of a molybdenum layer and an aluminum layer.

[0042] Thereafter, as shown in FIG. 7(d), the insulating layer IL2, which is an organic layer, is formed on the insulating layer IL1, the electrode EL, and the metal layer ML (step ST14).

[0043] During the above steps ST12 to ST14, in addition to the pixel circuits 1 and the display elements 20 in the display area DA, terminals TM in the peripheral area SA and the like are also formed.

[0044] 7(e), a protective film PF is attached onto the insulating layer IL2 (step ST15). At this time, the protective film PF is disposed on at least the insulating layer IL2 located directly above the metal layer ML. In the illustrated example, the protective film PF is disposed across the display area DA and the peripheral area SA, and overlaps the entire insulating layer IL2. The protective film PF is made of a resin material such as polyethylene terephthalate (PET).

[0045] In this way, the process substrate MB is prepared. The process substrate MB prepared in this way has a plurality of panel portions PNL arranged in the first direction X and the second direction Y, as shown in Fig. 8. In the example of Fig. 8, the plurality of panel portions PNL are adjacent to each other in the first direction X and the second direction Y, with a cut line CL shown by a dashed line in between. Note that a gap may be provided between each of the panel portions PNL.

[0046] In step ST2, the process substrate MB is cut into each panel portion PNL along the cut lines CL, as shown in Fig. 8. As a result, individual process substrates SUB are formed.

[0047] 9, in step ST3, the substrate to be processed SUB is carried into the laser irradiation device 100. The laser irradiation device 100 includes a stage 110 and a laser device 120 disposed above the stage 110. When the substrate to be processed SUB is carried into the laser irradiation device 100, the substrate to be processed SUB is turned over so that the protective film PF of the substrate to be processed SUB faces the stage 110 (step ST31).

[0048] Thereafter, as shown in Fig. 10, the process substrate SUB is placed on the stage 110 (step ST32). At this time, the process substrate SUB is placed on the stage 110 so that the protective film PF is in contact with the stage 110. Note that Figs. 10 to 13 show an enlarged cross section of a portion of the process substrate SUB including the metal layer ML.

[0049] Thereafter, as shown in Fig. 11, the processing substrate SUB is irradiated with laser light LZ (step ST33). At this time, the laser device 120 is located on the side of the processing substrate SUB facing the substrate 10. The laser device 120 is configured to emit laser light LZ having a wavelength suitable for processing the metal layer ML and transmitting through the substrate 10 and the insulating layer IL1. For example, the laser device 120 is configured to emit laser light LZ having an ultraviolet wavelength. At this time, the protective film PF is in contact with the stage 110 at the irradiation position of the laser light LZ.

[0050] The laser device 120 irradiates the laser light LZ from the substrate 10 side toward the metal layer ML. The laser light LZ passes through the substrate 10 and the insulating layer IL1 made of a transparent material, and forms a hole HL penetrating the metal layer ML and the insulating layer IL2. Most of the energy of the laser light LZ is used to process the metal layer ML and the insulating layer IL2. Therefore, the laser light LZ does not form a hole penetrating the protective film PF, and the stage 110 is hardly damaged by the laser light LZ. In addition, when the hole HL is formed by the laser light LZ, dust 40 is generated. The dust 40 adheres to the protective film PF directly above the metal layer ML.

[0051] By irradiating the metal layer ML with the laser light LZ, a plurality of holes HL are formed in a pattern corresponding to the identification information, thereby forming the tag TG shown in FIG.

[0052] In step ST4, first, the processing substrate SUB is carried out from the laser irradiation apparatus 100, and as shown in FIG. 12, the processing substrate SUB is turned over (step ST41).

[0053] 13, the protective film PF is peeled off from the process substrate SUB (step ST42). Since the dust 40 adheres to the protective film PF, the dust 40 is removed from the process substrate SUB by peeling the protective film PF from the process substrate SUB.

[0054] Through the above steps, a plurality of holes HL arranged in a pattern corresponding to the identification information are formed in the metal layer ML and the insulating layer IL2 by irradiation with laser light.

[0055] 14, after the step of irradiating the laser light (step ST3), a step of cutting the process substrate MB into each panel unit PNL (step ST2) may be performed. For example, laser light may be irradiated to a plurality of tags TG of the process substrate MB using a plurality of laser devices, and then the process substrate MB may be cut into each panel unit PNL.

[0056] 15, after the step of peeling off the protective film PF (step ST4), a step of cutting the process substrate MB into each panel portion PNL (step ST2) may be performed. In this case, in step ST42, the protective film PF is peeled off from the process substrate MB. When peeling off the protective film PF from the process substrate MB, the number of times the protective film PF is peeled off is reduced compared to when the protective film PF is peeled off from the process substrate SUB cut into each panel portion PNL. This can improve the manufacturing yield of the display device.

[0057] According to this embodiment, dust 40 generated by the laser irradiation for forming the tag TG adheres to the protective film PF. This makes it possible to prevent the scattering of dust generated during the laser irradiation. Therefore, equipment such as a dust collector for sucking up the dust is not required, and the manufacturing cost of the display device can be reduced.

[0058] Furthermore, the laser light LZ does not penetrate the protective film PF, and the stage 110 is hardly damaged by the laser light LZ. This eliminates the need to prepare a stage with a through hole or groove formed at the laser irradiation position, for example. This makes it possible to reduce the manufacturing cost of the display device.

[0059] Furthermore, the dust 40 attached to the protective film PF is removed from the processing substrate SUB together with the protective film PF. As a result, almost no dust 40 remains on the processing substrate SUB. This makes it possible to suppress a decrease in the reliability of the display device.

[0060] Moreover, scattering of the dust 40 is suppressed, and furthermore, the generated dust is removed from the processing substrate SUB together with the protective film PF, so that contamination of the laser irradiation device 100 can be suppressed.

[0061] Furthermore, the tag TG formed by the above-mentioned manufacturing method can be formed in a small space, and is suitable for a display device DSP having a small peripheral area SA.

[0062] As described above, according to the present embodiment, it is possible to provide a manufacturing method for a display device that can suppress a decrease in reliability and reduce manufacturing costs.

[0063] In the above embodiment, an organic electroluminescence display device has been described as an example of the display device DSP, but the display device DSP may be a display device including liquid crystal elements or inorganic light emitting diodes as display elements.

[0064] All display device manufacturing methods that can be implemented by a person skilled in the art by making appropriate design modifications based on the display device manufacturing method described above as an embodiment of the present invention fall within the scope of the present invention as long as they include the gist of the present invention.

[0065] Within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications, and such modifications are also understood to fall within the scope of the present invention. For example, those in which a person skilled in the art appropriately adds or removes components or modifies the design of the above-mentioned embodiment, or adds or omits steps or modifies conditions, are also included in the scope of the present invention as long as they include the gist of the present invention.

[0066] Furthermore, with regard to other effects and advantages brought about by the aspects described in the above-mentioned embodiments, those which are obvious from the description in this specification or which can be appropriately thought up by a person skilled in the art are naturally understood to be brought about by the present invention. [Explanation of symbols]

[0067] DSP...display device, MB, SUB...processing substrate, PNL...panel portion, DA...display area, SA...peripheral area, SP...sub-pixel, UE...upper electrode, LE...lower electrode, 5...partition wall, 11-13, IL1, IL2...insulating layer, 14...sealing layer, 20...display element, 30...semiconductor layer, 31-33...electrode, 10...substrate, ML...metal layer, EL...electrode, TG...tag, PF...protective film, 40...dust, 110...stage, 120...laser device, LZ...laser light.

Claims

1. forming a transparent inorganic layer over a display area on a transparent substrate and a peripheral area surrounding the display area; forming a metal layer on the inorganic layer in the peripheral region; forming an organic layer on the inorganic layer and the metal layer; preparing a processing substrate having a protective film attached at least on the organic layer located directly above the metal layer; irradiating the metal layer with laser light from the substrate side; In the step of irradiating the laser light, a plurality of holes are formed penetrating the metal layer and the organic layer, The plurality of holes formed in the metal layer are arranged in a pattern corresponding to the identification information. A method for manufacturing a display device.

2. The step of irradiating the laser light is performed in a state where the protective film is in contact with a stage. The method for manufacturing the display device according to claim 1 .

3. In the step of irradiating the laser light, the protective film is in contact with the stage at a position irradiated with the laser light. The method for manufacturing the display device according to claim 2 .

4. In the step of irradiating the laser light, no hole penetrating the protective film is formed, and dust generated in association with the formation of a hole penetrating the metal layer and the organic layer is allowed to adhere to the protective film. The method for manufacturing the display device according to claim 1 .

5. After irradiating the laser light, Peeling the protective film off the treatment substrate; The method for manufacturing the display device according to claim 4 .

6. The laser light is an ultraviolet wavelength laser light. The method for manufacturing the display device according to claim 1 .

7. the substrate is a glass substrate, The inorganic layer is formed of silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiON); The method for manufacturing the display device according to claim 1 .

8. The metal layer is formed of at least one material selected from the group consisting of titanium, molybdenum, tungsten, and aluminum. The method for manufacturing the display device according to claim 1 .

9. further forming an electrode on the inorganic layer in the display area; The electrode and the metal layer are formed in the same process. The method for manufacturing the display device according to claim 1 .

10. The metal layer is formed as a stack of a titanium layer and an aluminum layer, or a stack of a molybdenum layer and an aluminum layer. The method for manufacturing the display device according to claim 9 .

11. forming a transparent inorganic layer over a plurality of panel portions on a transparent substrate; forming a metal layer on the inorganic layer in a peripheral region surrounding a display region in each of the panel units; forming an organic layer on the inorganic layer and the metal layer; preparing a processing substrate having a protective film attached at least on the organic layer located directly above the metal layer; irradiating the metal layer with laser light from the substrate side; In the step of irradiating the laser light, a plurality of holes are formed penetrating the metal layer and the organic layer, The plurality of holes formed in the metal layer are arranged in a pattern corresponding to the identification information. A method for manufacturing a display device.

12. Before irradiating the laser light, cutting the processing substrate into individual panel portions; The method for manufacturing the display device according to claim 11 .

13. After irradiating the laser light, cutting the processing substrate into individual panel portions; The method for manufacturing the display device according to claim 11 .

14. The step of irradiating the laser light is performed in a state where the protective film is in contact with a stage. The method for manufacturing the display device according to claim 11 .

15. In the step of irradiating the laser light, no hole penetrating the protective film is formed, and dust generated in association with the formation of a hole penetrating the metal layer and the organic layer is caused to adhere to the protective film, Thereafter, the protective film is peeled off from the processing substrate. The method for manufacturing the display device according to claim 11 .

16. the laser light is an ultraviolet wavelength laser light, the substrate is a glass substrate, The inorganic layer is formed of silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiON); The metal layer is formed of at least one material selected from the group consisting of titanium, molybdenum, tungsten, and aluminum. The method for manufacturing the display device according to claim 11 .

17. forming a metal layer over the substrate; A protective film is placed directly on the metal layer; irradiating the metal layer with laser light from the substrate side; In the step of irradiating the laser light, a plurality of holes are formed in the metal layer in a pattern corresponding to the identification information. A method for manufacturing a display device.

18. The step of irradiating the laser light is performed in a state where the protective film is in contact with a stage. The method for manufacturing the display device according to claim 17 .

19. In the step of irradiating the laser light, no hole penetrating the protective film is formed, and dust generated in association with the formation of a hole penetrating the metal layer is caused to adhere to the protective film, Thereafter, the protective film is peeled off. The method for manufacturing the display device according to claim 18 .

20. the laser light is an ultraviolet wavelength laser light, the substrate is a glass substrate, The metal layer is formed of at least one material selected from the group consisting of titanium, molybdenum, tungsten, and aluminum. The method for manufacturing the display device according to claim 19 .

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