Display panel

Abstract

To suppress display unevenness in a display panel, and to provide a display panel with a high aperture ratio of a pixel.SOLUTION: Provided is a display panel including a first pixel electrode, a second pixel electrode, a third pixel electrode, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a first common layer, a second common layer, a common electrode, and auxiliary wiring. The first common layer is positioned over the first pixel electrode and the second pixel electrode. The first common layer has a portion overlapping with the first light-emitting layer and a portion overlapping with the second light-emitting layer. The second common layer is positioned over the third pixel electrode. The second common layer has a portion overlapping with the third light-emitting layer. The common electrode has a portion overlapping with the first pixel electrode with the first common layer and the first light-emitting layer provided therebetween, a portion overlapping with the second pixel electrode with the first common layer and the second light-emitting layer provided therebetween, a portion overlapping with the third pixel electrode with the second common layer and the third light-emitting layer provided therebetween, and a portion in contact with a top surface of the auxiliary wiring.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display panel, a display device, a display module, an electronic device, and a display panel. It relates to the manufacturing method.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, an electronic device, a lighting device, and an input / output device (for example, touch panel, etc.), their driving method, or their manufacturing method as examples. can be done. [Background technology]

[0003] In recent years, there has been a demand for display panels with higher resolution. For example, full high definition (1 920×1080), 4K (pixel count 3840×2160 or 4096×2160, etc.) , and even 8K (7680 x 4320 or 8192 x 4320 pixels, etc.) Display panels with a large number of prime numbers are being actively developed.

[0004] There is also a demand for larger display panels. For example, in home television devices, The screen size is now more than 50 inches diagonally. The more prime numbers there are, the more information can be displayed at once, so they are used in digital signage, etc. There is a demand for even larger screens.

[0005] Electroluminescence (hereinafter referred to as EL) Light-emitting elements (also called EL elements) that utilize the EL phenomenon can be easily made thin and lightweight. It has features such as being able to respond quickly to inputs and being able to be driven using a low-voltage DC power supply. Application to display panels is being considered. For example, Patent Document 1 shows a case where an organic EL element is applied. Also disclosed is a flexible light emitting device. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2014-197522 A Summary of the Invention [Problem to be solved by the invention]

[0007] The top emission display panel is made up of transistors, capacitors, and Since the wires, etc. can be arranged so that they overlap with the light-emitting area of ​​the light-emitting element, bottom emission (bottom emission) is possible. Compared to display panels with a cushion structure, the pixel aperture ratio can be increased. In a display panel with a top emission structure, the light emitted by the light-emitting element is directed to the outside via a common electrode. In order to extract the visible light, the common electrode needs to be transparent to the visible light. However, the use of a common electrode increases the resistance of the common electrode. The voltage drop caused by this causes the potential distribution on the display surface to become uneven, resulting in inconsistent brightness of the light-emitting elements. As a result, the display quality is degraded.

[0008] An object of one embodiment of the present invention is to suppress display unevenness or luminance unevenness in a display panel or a display device. One embodiment of the present invention is to provide a display panel or a display device with high display quality. One embodiment of the present invention is to provide a display panel or a display device having a high pixel aperture ratio. One object of the present invention is to provide a highly reliable display panel or display One object of the present invention is to provide an apparatus.

[0009] An object of one embodiment of the present invention is to increase the size of a display device. It is an object of the present invention to provide a display device having a wide display area that is difficult to notice. An object of one embodiment of the present invention is to reduce the thickness or weight of a display device. It is an object of the present invention to provide a display device capable of displaying images along the screen. An object of the present invention is to provide a display device with excellent viewability. It is an object of the present invention to provide a display panel or display device.

[0010] Note that the description of these problems does not preclude the existence of other problems. However, it is not necessary to solve all of these problems. It is possible to extract other issues from the description in the section. [Means for solving the problem]

[0011] One aspect of the present invention is a liquid crystal display device comprising a first pixel electrode, a second pixel electrode, a third pixel electrode, a first light-emitting layer, The second light-emitting layer, the third light-emitting layer, the first common layer, the second common layer, the common electrode, and the auxiliary wiring The display panel has a first light-emitting layer disposed on the first pixel electrode. The third light-emitting layer is located on the second pixel electrode. The third light-emitting layer is located on the third pixel electrode. The first light-emitting layer has a function of emitting light of a different color from the second light-emitting layer. The first common layer has a function of emitting light of the same color as the light emitting layer of the third pixel electrode. The first common layer is located on the second pixel electrode. The first common layer has a portion overlapping the first light-emitting layer and a portion overlapping the second light-emitting layer. The second common layer is located on the third pixel electrode. The common layer has a portion overlapping with the third light-emitting layer. The common electrode is disposed between the first common layer and the first light-emitting layer. A portion overlapping the first pixel electrode through the optical layer, and a portion overlapping the second pixel electrode through the first common layer and the second light-emitting layer. A portion overlapping the second pixel electrode and a third pixel electrode via a second common layer and a third light-emitting layer. The first common layer has an overlapping portion and a portion in contact with the upper surface of the auxiliary wiring. The first common layer may have a portion that contacts the second common layer. The first common layer may have a portion that overlaps the second common layer. It may be possible.

[0012] The first common layer may be located between the first pixel electrode and the first light-emitting layer. may be located between the first light-emitting layer and the common electrode.

[0013] One aspect of the present invention is a liquid crystal display device comprising a first pixel electrode, a second pixel electrode, a third pixel electrode, a first organic compound, and a second organic compound. The display panel has a first organic compound layer, a second organic compound layer, a common electrode, and an auxiliary wiring. The organic compound layer is located on the first pixel electrode and the second pixel electrode. The layer is located on the third pixel electrode. The first organic compound layer has the same composition as the second organic compound layer. The common electrode is connected to the first pixel electrode via the first organic compound layer. a portion overlapping the second pixel electrode via the first organic compound layer; A portion overlapping the third pixel electrode via the organic compound layer and a portion contacting the upper surface of the auxiliary wiring are provided. The first organic compound layer may have a portion in contact with the second organic compound layer. The first organic compound layer may have a portion overlapping with the second organic compound layer.

[0014] The first organic compound layer and the second organic compound layer each have a plurality of light-emitting layers stacked on top of each other. The first organic compound layer and the second organic compound layer may have a function of emitting white light. It may be possible.

[0015] The auxiliary wiring may be located on the same plane as the first pixel electrode.

[0016] The display panel of each of the above configurations may further include a transistor. It may be located on the same plane as the gate electrode or source electrode of the transistor.

[0017] The first pixel electrode, the second pixel electrode, and the third pixel electrode are respectively a reflective electrode and a reflective and a transparent electrode on the electrode.

[0018] The common electrode may be both transmissive and reflective to visible light.

[0019] The auxiliary wiring does not overlap the first pixel electrode, the second pixel electrode, and the third pixel electrode. preferable.

[0020] One aspect of the present invention is a display panel having any of the above configurations, a connector or an integrated circuit, The display module has the following features:

[0021] One embodiment of the present invention is a display device having a first display panel and a second display panel. The first display panel and the second display panel each have any of the above configurations. The first display panel has a first display area. The second display panel has a second display area. The first display region has a region that transmits visible light and a region that transmits visible light. The first display region has an overlapping portion with the region that transmits visible light.

[0022] One embodiment of the present invention is a display device including a flexible display panel, a first shock absorbing layer, and a second shock absorbing layer. A display device having a layer, a first support, a second support, a first gear, and a second gear. The display panel is disposed between the first and second impact absorbing layers. The support and the second support overlap the display panel via the first impact buffer layer. The first support is connected to the first gear. The second support is connected to the second gear. The first gear and the second gear mesh with each other, and the movement of the first support and the second support is controlled. The first impact mitigation layer has an area fixed to the first support and an area fixed to the second support. A region fixed to the first support and a region fixed to both the first support and the second support The display device has a first support and a second support positioned substantially on the same plane. and a bent state in which the first support and the second support overlap each other. In the bent state, the display surface of the display panel is on the inside. The display panel is bent. The first and second shock absorbing layers are each made of urethane. It is preferable that the resin composition contains at least one of polyaniline, acrylic, and silicone.

[0023] One embodiment of the present invention is a display device having any of the above structures, an antenna, and a battery (such as a secondary battery). At least one of a housing, a camera, a speaker, a microphone, and an operation button, It is an electronic device.

[0024] One aspect of the present invention is a liquid crystal display device comprising a first pixel electrode, a second pixel electrode, and a third pixel electrode on an insulating surface. forming a first common layer on the first pixel electrode and the second pixel electrode; In a process separate from the process of forming the layer, a second common layer is formed on the third pixel electrode, and a first mask A first light-emitting layer is formed on the first pixel electrode, and a third light-emitting layer is formed on the third pixel electrode using the A light-emitting layer is formed, and a second light-emitting layer is formed using a second mask in a process separate from the process of forming the first light-emitting layer. A second light-emitting layer is formed on the pixel electrode, and the first common layer, the second common layer, the first light-emitting layer, and the second light-emitting layer are formed on the pixel electrode. In the method for manufacturing a display panel, a common electrode is formed on the second light-emitting layer and the third light-emitting layer.

[0025] In the above manufacturing method, the first common layer is formed using a third mask, and the first common layer is After the formation, the third mask is moved by one pixel in parallel to the insulating surface, and then the third mask is The second common layer may be formed using a mask. A first common layer is formed using a mask, and a second common layer is formed using a fourth mask. In this case, the opening pattern of the third mask may be set to correspond to the opening pattern of the fourth mask. The image is shifted by one pixel.

[0026] One aspect of the present invention is a liquid crystal display device comprising a first pixel electrode, a second pixel electrode, and a third pixel electrode on an insulating surface. forming a first electrode on the first pixel electrode and the second pixel electrode; forming a first organic compound layer on the first pixel electrode and the second pixel electrode; A second organic compound layer is formed on the third pixel electrode in a process separate from the process of forming the first organic compound layer. and forming a common electrode on the first organic compound layer and the second organic compound layer. The first organic compound layer has a function of emitting light of the same color as the second organic compound layer. Possesses the ability.

[0027] In the above manufacturing method, a first organic compound layer is formed using a first mask; After forming the organic compound layer, the first mask is moved by one pixel in parallel to the insulating surface. Then, the second organic compound layer may be formed using the first mask. In the method, a first organic compound layer is formed using a first mask, and a second organic compound layer is formed using a second mask. In this case, the opening pattern of the first mask may be: The aperture pattern of the second mask is shifted by one pixel.

[0028] In each of the above manufacturing methods, forming the first pixel electrode, the second pixel electrode, and the third pixel electrode The auxiliary wiring may be formed in the same process as the above process. Effect of the Invention

[0029] According to one aspect of the present invention, it is possible to suppress display unevenness or luminance unevenness in a display panel or a display device. According to one embodiment of the present invention, a display panel or a display device with high display quality can be provided. One embodiment of the present invention can provide a display panel or a display device with a high pixel aperture ratio. According to one embodiment of the present invention, a highly reliable display panel or display device can be provided.

[0030] According to one aspect of the present invention, it is possible to increase the size of a display device. According to one embodiment of the present invention, a display device having a wide display area in which defects are hardly visible can be provided. The display device can be made thinner or lighter. According to one embodiment of the present invention, a display device having excellent viewability can be provided. According to one aspect of the present invention, a novel display panel or display device can be provided. .

[0031] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. However, it is possible to extract effects other than these. [Brief description of the drawings]

[0032] [Figure 1] 1A is a top view showing an example of a display panel, and FIGS. [Diagram 2] 1A and 1B are top views showing an example of a display panel, and 1C and 1D are cross-sectional views showing an example of a display panel. [Diagram 3] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display panel. [Figure 4] 1A to 1C are top views illustrating an example of a manufacturing method of a display panel. [Diagram 5] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display panel. [Figure 6] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display panel. [Figure 7] 1A and 1B are top views showing an example of a display panel, and FIG. [Figure 8] FIG. 2 is a top view showing an example of a pixel. [Figure 9] 1A and 1B are top views showing a display panel of a comparative example, and FIG. [Figure 10] FIG. 2A is a top view showing an example of a display panel; FIG. 2B is a cross-sectional view showing an example of a display panel. [Figure 11] FIG. 1 is a cross-sectional view showing an example of a display panel. [Figure 12] 1A is a top view showing an example of a display panel, and FIGS. [Figure 13] 1A and 1B are top views showing an example of a display panel, and FIG. [Figure 14] FIG. 1 is a cross-sectional view showing an example of a display device. [Figure 15] FIG. 2 is a top view showing an example of a display panel. [Figure 16] FIG. 1 is a cross-sectional view showing an example of a display panel. [Figure 17] 1A is a top view showing an example of a display panel, and FIG. [Figure 18] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display panel. [Figure 19] FIG. 1 is a cross-sectional view illustrating an example of a transistor. [Figure 20] 1A is a block diagram showing an example of a pixel, and FIG. [Figure 21] 4 is a timing chart showing an example of the operation of a pixel. [Figure 22] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 23] Cross-sectional STEM image of the connection part. [Figure 24] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display panel. [Diagram 25] Cross-sectional STEM image of auxiliary wiring. [Figure 26] 1A is a cross-sectional view showing an example of a display panel, and FIG. [Figure 27] Cross-sectional STEM image of the connection part. [Figure 28] 1A and 1B are perspective views illustrating samples for a storage test of a display panel. [Figure 29] 13A, 13B, 13C, and 13D are photographs showing an example of a method for attaching a display panel, FIG. 13C is a side view showing an example of a method for attaching a display panel, and FIG. 13E is a photograph showing a display panel. [Diagram 30] FIG. 1 is a side view showing an example of a display device. [Diagram 31] 1 is a photograph showing a display device of an embodiment. [Diagram 32] FIG. 2 is a rear view showing an example of a display device. [Diagram 33] 1A and 1B are bottom views showing an example of a display panel, (B) and (D) are top views showing an example of a display panel, and (E) is a side view showing an example of a display device. [Diagram 34] 1 is a photograph showing a display device of an embodiment. [Diagram 35] 13A and 13B are diagrams showing the results of estimating the aperture ratio of a pixel. [Diagram 36] FIG. 1 is a perspective view showing a display device according to an embodiment. [Figure 37] 1 is a photograph showing a display device of an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0033] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. It should not be construed as being limited to the contents described.

[0034] In the configuration of the invention described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals are used in common among different drawings, and the repeated explanations are omitted. When referring to a function, the same hatch pattern may be used and no particular reference number may be given.

[0035] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, in order to facilitate understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0036] The words "film" and "layer" may be interchangeable depending on the circumstances. For example, the term "conductive layer" can be replaced with "conductive film" Alternatively, for example, the term "insulating film" can be changed to " The term "insulating layer" may be changed to "insulating layer."

[0037] (Embodiment 1) In this embodiment, a display panel and a display device according to one embodiment of the present invention will be described with reference to FIGS. I will explain this in more detail.

[0038] The display panel of the present embodiment has a top emission structure having light emitting elements as display elements. It is a display panel with a structure.

[0039] Specifically, a display panel according to one embodiment of the present invention includes a first pixel electrode, a second pixel electrode, a third pixel electrode, and a A pixel electrode, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a first common layer, a second common layer, The first light-emitting layer is disposed on the first pixel electrode. The first light-emitting layer is located on the second pixel electrode. The third light-emitting layer is located on the third pixel electrode. The first light-emitting layer has a function of emitting light of a different color from that of the second light-emitting layer. The first common layer has a function of emitting light of the same color as the third light emitting layer. The first common layer is located on the first light emitting layer and the second pixel electrode. The second common layer is located on the third pixel electrode and has a portion overlapping with the second light emitting layer. The second common layer has a portion overlapping with the third light emitting layer. The common electrode is A portion overlapping the first pixel electrode through the first light-emitting layer and a portion overlapping the first common layer and the second light-emitting layer through the first common layer and the second light-emitting layer. and a portion overlapping the second pixel electrode through the second common layer and the third light-emitting layer. It has a portion overlapping with the electrode and a portion in contact with the upper surface of the auxiliary wiring.

[0040] By connecting auxiliary wiring to the common electrode of the light-emitting element, the voltage drop caused by the resistance of the common electrode is reduced. The common layer of the light-emitting element is formed by the first layer. By providing the first common layer and the second common layer separately, the aperture ratio of the pixel can be increased. Therefore, the aperture ratio of the pixel is reduced by providing an auxiliary wiring in the pixel portion of the display panel. The higher the aperture ratio of a pixel, the larger the number of pixels required to obtain a certain brightness on a display panel. The required brightness of the sub-pixel can be reduced, which extends the life of the light-emitting element. In addition, the display panel can display high brightness.

[0041] [Comparative example of display panel] A display panel having auxiliary wiring, which is a comparative example, will be described with reference to FIGS. 9(A) to 9(C). FIG. 9A is a top view of a pixel electrode 111 and an auxiliary wiring 120 of a display panel. Fig. 9(B) shows a cross-sectional view taken along dashed line XY shown in Fig. 9(A).

[0042] As shown in FIG. 9A, a common electrode 113 is provided on the same surface (insulating layer 101 in FIG. 9B). The auxiliary wiring 120 and the pixel electrode 111 can be provided. As shown in FIG. 9(B), An opening is provided in the insulating layer 104 on the auxiliary wiring 120, and the EL layer 112 is painted in each color. By dividing the wiring 120, the auxiliary wiring 120 and the common electrode 113 are connected at the connection portion 122. It is possible.

[0043] Here, one pixel 130 is composed of three sub-pixels of red, green, and blue (R, G, B). If the entire EL layer 112 is painted in different colors, the film formation process will be extremely complicated. Therefore, even if the light-emitting layers are painted in different colors, the hole injection layer, The hole transport layer, electron transport layer, and electron injection layer can be configured as a common layer for the three color sub-pixels. The layers are preferably deposited in one go.

[0044] FIG. 9C shows an example of a metal mask that can be used when forming the EL layer 112. By using mask 150, layers with a common configuration (common layers) for the three sub-pixels can be formed at once. The EL layer 112 is not deposited on the connection portion 122. However, the EL layer 112 can be deposited on the connection portion 122 by using a mask. In this case, deposition material accumulates in the shadow areas of the mask, causing blurring and misalignment of the pattern. Therefore, in order to prevent the EL layer 112 from being formed on the connection portion 122, the two pixels 130 There is a wide non-opening portion of the mask 150 between the openings (see width W1 of the non-opening portion in FIG. 9(C)). In addition, the mask 150 is required to be prevented from bending. In order to prevent this, it is necessary to ensure sufficient tension in the mask. Another problem is that the width of the non-opening portion of the mask cannot be made shorter than a predetermined length.

[0045] Therefore, in one embodiment of the present invention, the common layer included in the EL layer is formed in two separate steps. By forming the common layer in two steps, the aperture ratio of the pixel is increased compared to when the common layer is formed in one step. This allows the pixel opening to be improved even if an auxiliary wiring is provided in the pixel portion of the display panel. The common layer can be formed in three or more steps, but the result is Since the number of film-forming steps is very large, it is preferable to perform the process twice. A specific configuration will be described below.

[0046] [Display panel example 1] A display panel having auxiliary wiring according to one embodiment of the present invention will be described with reference to FIGS. 1 to 7. do.

[0047] 1A, 2A, and 2B show a common layer 161a and a common layer 161b of the display panel, respectively. 2A and 2B are top views of the common layer 161b. FIG. 1(B) shows a cross-sectional view taken along the dashed line A1-A2 in FIG. 1(A). 1(A) is a cross-sectional view taken along the dashed line A11-A12 in FIG. 2(A). 2(A) is a cross-sectional view taken along the dashed line A3-A4 in FIG. 2(D). A cross-sectional view between line A5-A6 is shown.

[0048] As shown in FIG. 1A, FIG. 1B shows the red subpixel (R) and The pixel 130a has a green subpixel (G) and a blue subpixel (B 1C is a cross-sectional view including the red sub-pixel ( The pixel 130a has a red subpixel (R) and a green subpixel (G), and the pixel 130c adjacent to the pixel 130a has a red subpixel (R). 1 is a cross-sectional view including a pixel (R).

[0049] The display panel shown in FIG. 1B includes a pixel electrode 111 and an auxiliary wiring 120 on an insulating layer 101. The end of the pixel electrode 111 and the end of the auxiliary wiring 120 are respectively covered with the insulating layer 104. An EL layer is provided on the pixel electrode 111 through the opening of the insulating layer 104. A common electrode 113 is provided on the auxiliary wiring 120 and the EL layer. The pole 113 is provided in common to sub-pixels of multiple colors, or even to multiple pixels.

[0050] The EL layer is a common layer (common layer 16 in FIG. 1B) provided in common to sub-pixels of multiple colors. 1 and a common layer 165) and a layer provided for each color (light-emitting layer 163 in FIG. 1(B)). The common layer 161a and the common layer 161b may be collectively referred to as the common layer 161. Similarly, the light-emitting layers of the sub-pixels are collectively referred to as light-emitting layer 163, common layer 165a and common layer 165b. 65b are sometimes collectively referred to as a common layer 165. In addition, in the figure, the thickness of each light-emitting layer is approximately Although shown as being approximately equal, the thickness of the light-emitting layers may be different for each color.

[0051] The common layer of the EL layer may be located between the pixel electrode and the light-emitting layer, and the light-emitting layer and the common electrode may be located between the pixel electrode and the light-emitting layer. In this embodiment, the light emitting element may be located between the pixel electrode 111 and the light emitting layer 163. A common layer 161 is disposed between the light-emitting layer 163 and the common electrode 113. 5, the light-emitting element has only one of the common layer 161 and the common layer 165. It may have a pore structure.

[0052] As shown in FIGS. 1A to 1C, a plurality of light-emitting elements included in the same pixel are formed by the same common layer 1. 61 (common layer 161a or 161b), and two light-emitting elements included in adjacent pixels One has a common layer 161a and the other has a common layer 161b.

[0053] The pixel electrode 111 overlaps with the common electrode 113 via the EL layer. When a voltage higher than the threshold voltage of the light-emitting element is applied between the electrodes 113, a positive electrode is applied to the EL layer from the anode side. Holes are injected from the cathode side and electrons are injected from the cathode side. The injected electrons and holes are reassembled in the EL layer. When they combine, the luminescent material contained in the EL layer emits light.

[0054] At the connection portion 122, the auxiliary wiring 120 contacts the common electrode 113. 20 is electrically connected to the common electrode 113. The common electrode 113 is connected to the auxiliary wiring 120. Since they are electrically connected, the voltage drop caused by the resistance of the common electrode 113 can be suppressed. This makes it possible to suppress uneven brightness on the display panel and improve the display quality of the display panel. The auxiliary wiring 120 does not overlap with the pixel electrode 111. It is electrically insulated from the pixel electrode 111 .

[0055] In the pixels 130a and 130d, the red subpixel (R) is the luminescent subpixel shown in FIG. The light emitting element 110R includes a pixel electrode 111, a common layer 161a, a light emitting layer 163R, a common layer 165a, and a common electrode 113. On the other hand, the pixel 130b and the pixel In 130c, the light-emitting element of the red subpixel (R) is a common layer 161a and a common layer 165a is not included, but a common layer 161b and a common layer 165b are included (see FIG. 1C).

[0056] In the pixels 130a and 130d, the green subpixel (G) emits light as shown in FIG. The light emitting element 110G includes a pixel electrode 111, a common layer 161a, a light emitting layer 163G, a common layer 165a, and a common electrode 113. In 130c, the light-emitting element of the green subpixel (G) is a common layer 161a and a common layer 165a, but has a common layer 161b and a common layer 165b.

[0057] In the pixels 130b and 130c, the blue subpixel (B) emits light as shown in FIG. The light emitting element 110B includes a pixel electrode 111, a common layer 161b, a light emitting layer 163B, a common layer 165b, and a common electrode 113. In 130d, the light-emitting element of the blue subpixel (B) is a common layer 161b and a common layer 165b, but has a common layer 161a and a common layer 165a.

[0058] In the region 170, the common layer 161a and the common layer 161b are in contact with each other. In the region 170, the common layer 165a and the common layer 165b are in contact with each other. 65a is on and in contact with the common layer 161a. Similarly, in the region 170, the common layer 165 b is in contact with the common layer 161b.

[0059] As shown in FIG. 1A, neither the common layer 161a nor the common layer 161b is provided. The only area that is not covered is the connection portion 122 and its surroundings. It can be said that multiple regions with different thicknesses exist separately from each other. When forming the common layer 161 in one step, a plurality of regions in which the common layer 161 is not formed are formed separately from each other. Therefore, the upper layer of the common layer 161 shown in FIG. The outline shows a characteristic layout obtained by forming the common layer 161 in multiple steps. In other words, this is a characteristic layout according to one aspect of the present invention.

[0060] In addition, depending on the positional deviation of the mask during film formation, as shown in Figures 2(A) to (D), The common layer 161a and the common layer 161b are overlapped with each other, and the common layer 161a and the common layer 161b are separated from each other. There may be some gaps.

[0061] In FIG. 2A, the common layer 161a of the pixel 130a is a common layer 161b of the pixel 130b. The common layer 161b of the pixel 130c overlaps with the common layer 161b of the pixel 130d. 16 shows an example in which the common layer 161a is separated from the common layer 161a.

[0062] In the region 171 shown in FIG. 2C, the common layer 161b is located on the common layer 161a. Similarly, in region 171, common layer 165b is located on common layer 165a.

[0063] In the region 172 shown in FIG. 2(D), the common layer 161a and the common layer 161b are separated from each other. Similarly, in region 172, common layer 165a and common layer 165b are separated from each other.

[0064] In FIG. 2B, the common layer 161a of the pixel 130a and the pixel 130d is The pixel 130c has a common layer 161b and the pixel 130b has a common layer 161b. It is separated from 1b.

[0065] 2A and 2B, the connection portion 122 and its periphery are provided with a common layer 161a and a common In other words, neither the common layer 161 nor the layer 161b is provided. The upper surface level of the common layer 161 shown in FIGS. The layout is also unique, as it is obtained by forming the common layer 161 in multiple steps. In other words, this is a characteristic layout according to one aspect of the present invention.

[0066] In addition, in FIG. 1B and FIG. 2C and FIG. 2D, the end of the common layer 161 and the end of the common layer 165 are Although an example in which all parts are aligned is shown, the present invention is not limited to this.

[0067] Since the display panel according to one embodiment of the present invention has a top emission structure, the pixel electrode 111 is The pixel electrode 111 is an electrode on the side from which light is not extracted. It is also preferable to apply a micro-optical resonator (microcavity) structure to the light-emitting element. In this case, the pixel electrode 111 is preferably a reflective electrode. is 40% or more and 100% or less, preferably 70% or more and 100% or less.

[0068] In the display panel of one embodiment of the present invention, the pixel electrode 111 and the complementary electrode are formed by processing the same conductive film. The auxiliary wiring 120 can be fabricated. Materials used for the pixel electrode 111 and the auxiliary wiring 120 It is preferable that the resistivity of the material used for the common electrode 113 be lower than that of the material used for the common electrode 113 .

[0069] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as zinc, chromium, molybdenum, iron, cobalt, copper, or palladium; An alloy containing these metal materials can be used. Tungsten, neodymium, germanium, etc. may be added. Aluminum alloy, aluminum-nickel alloy, aluminum-neodymium alloy, aluminum Aluminum-containing alloys, such as aluminum-nickel-lanthanum alloys (Al-Ni-La) (aluminum alloy), silver-copper alloy, silver-palladium-copper alloy (Ag-Pd-Cu, It is formed using an alloy containing silver, such as an alloy of silver and magnesium. An alloy containing silver and copper is preferable because of its high heat resistance. By laminating a metal film or a metal oxide film in contact with the film, oxidation of the aluminum alloy film is suppressed. The metal film and metal oxide film can be made of titanium, titanium oxide, etc. In addition, a conductive film that transmits visible light and a film containing a metal material or an alloy may be used. For example, silver and indium tin oxide (ITO) may be used. xide) laminated film, a silver-magnesium alloy and ITO laminated film, etc. can be used. do.

[0070] The EL layer has at least a light-emitting layer. The EL layer may have a plurality of light-emitting layers. The L layer is a layer other than the light-emitting layer, and is made of a material having high hole injection properties, a material having high hole transport properties, and a material having high hole blocking properties. A material with high electron transport properties, a material with high electron injection properties, or a bipolar material ( The EL layer may further include a layer containing a substance having high electron transporting and hole transporting properties. The light-emitting material may be an organic or inorganic compound. It's fine.

[0071] The common layer 161 preferably includes a hole injection layer. The common layer 161 further includes a hole transport layer. The common layer 165 may include an electron injection layer. 165 may further include an electron transport layer.

[0072] The hole injection layer is a layer that injects holes from the anode to the EL layer and has high hole injection properties. The layer contains a material having a high hole injection property. It is preferable to use a composite material that includes a material (electron-accepting material).

[0073] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The layer contains a hole transporting material.

[0074] The light-emitting layer is a layer containing a light-emitting substance. A material that emits light of a color such as red, yellow-green, yellow, orange, or red is appropriately used. A structure that uses different luminescent materials to produce different luminescent colors (for example, complementary colors) In addition, a single light-emitting layer can be used to produce white light by combining the different light-emitting colors. The light-emitting layer may have a laminate structure having different light-emitting materials. There are no particular limitations on the substance, and it is a light-emitting substance that converts singlet excitation energy into light in the visible light region. It is possible to use luminescent materials that convert triplet excitation energy into visible light emission. As luminescent substances that convert singlet excitation energy into luminescence, Examples of luminescent materials that convert triplet excitation energy into luminescence include For example, substances that emit phosphorescence (phosphorescent materials) and thermally activated delayed fluorescence (TAF) (Thermally activated delayed fluorescens As a blue-emitting material, singlet excitation energy is converted into the visible light region. The green and red emitting materials are those with triplet excitation energy. By using a luminescent material that converts the light emitted from the LED into light in the visible light range, the RGB spectrum balance is improved. The light-emitting layer contains one or more compounds in addition to the light-emitting substance (guest material). The host material and the assist material may include has an energy gap larger than that of the luminescent material (guest material). The host material and the assist material can be used alone or in combination. It is preferable to use a combination of compounds that form an exciplex as the excitation light source. To form a complex, a compound that easily accepts holes (hole transport material) and a compound that easily accepts electrons are mixed. It is particularly preferable to combine with an easily accepting compound (electron transporting material).

[0075] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The layer contains an electron transporting material.

[0076] The electron injection layer is a layer that injects electrons from the cathode to the EL layer and contains a material with high electron injection properties. It is a layer.

[0077] When a microcavity structure is applied to a light-emitting device, optical tuning is performed by the electrodes or the EL layer. When optical adjustment is performed using at least one of the layers constituting the EL layer, In this case, the layer may be provided for each color in the same manner as the light-emitting layer. For example, the hole transport layer may be provided in a different layer for each color. By forming the insulating film 11 to a thickness that satisfies the requirements, optical adjustment may be performed.

[0078] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. The layers constituting the EL layer may each be formed by a deposition method ( It can be formed by methods such as vacuum deposition, transfer printing, inkjet printing, coating, etc. This can be done.

[0079] The light-emitting element may be a single element having one EL layer, or a light-emitting element having multiple EL layers. Tandem elements may be stacked via green layers.

[0080] In one embodiment of the present invention, a light-emitting element using an inorganic compound such as quantum dots may be used.

[0081] The common electrode 113 is an electrode from which light is extracted. The common electrode 113 transmits visible light. It is preferable that the light-emitting element has a conductive film. In this case, it is preferable that the common electrode 113 has both transparency and reflectivity to visible light. It is preferable that the electrode is a semi-transmissive / semi-reflective electrode. is 20% or more and 80% or less, preferably 40% or more and 70% or less.

[0082] The conductive film that transmits visible light is, for example, indium oxide, ITO, indium zinc oxide, Zinc oxide (ZnO), gallium zinc oxide (Ga-Zn oxide), aluminum zinc oxide It can be formed using materials such as Al-Zn oxide. It can also be formed using gold, silver, platinum, magnesium, etc. Nesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium Metallic materials such as aluminum or titanium, alloys containing these metallic materials, or nitrogen compounds of these metallic materials Titanium nitride, for example, can also be used by forming it thin enough to have light transmission. Moreover, a laminated film of the above materials can be used as a conductive film. For example, A laminated film of magnesium alloy and ITO is preferred because it can increase the electrical conductivity. In addition, graphene or the like may be used.

[0083] The pixel electrode 111 and the common electrode 113 are formed by using a deposition method or a sputtering method. In addition, it is possible to form the film by a discharge method such as an inkjet method, a screen printing method, etc. The insulating layer 11 can be formed by any printing or plating method.

[0084] A method for manufacturing the display panel shown in FIG. 1B will be described with reference to FIGS.

[0085] The thin films (insulating film, semiconductor film, conductive film, etc.) that constitute the display panel are formed by sputtering. , Chemical Vapor Deposition (CVD) method, Vacuum evaporation, Pulsed Laser Deposition (PLD) on) method, Atomic Layer Deposition (ALD) method The CVD method includes plasma enhanced chemical vapor deposition (PECV) and the like. D:Plasma Enhanced Chemical Vapor Deposit The thermal CVD method may be a metal-organic chemical vapor deposition (M ion) method. Metal Organic CVD (OCVD) method may also be used.

[0086] The thin films (insulating film, semiconductor film, conductive film, etc.) that make up the display panel are formed by spin coating, dip coating, etc. , spray coating, inkjet, dispensing, screen printing, offset printing, Cutter knife, slit coat, roll coat, curtain coat, knife coat, etc. It can be formed by:

[0087] When processing the thin films that make up the display panel, lithography methods and the like are used. Alternatively, the island-shaped thin film may be formed by a film formation method using a shielding mask. Alternatively, the thin film is processed by nanoimprinting, sandblasting, lift-off, etc. In the photolithography method, a resist mask is formed on the thin film to be processed. The thin film is processed by etching or the like, and the resist mask is removed. After forming a thin film, the thin film is exposed and developed to be processed into a desired shape. , there is.

[0088] When light is used in the lithography method, the light used for exposure is, for example, i-line (wavelength 365 nm). m), g-ray (wavelength 436 nm), h-ray (wavelength 405 nm), or a mixture of these In addition, ultraviolet light, KrF laser light, ArF laser light, etc. can be used. Also, exposure may be performed by immersion lithography. Examples of light that can be used include extreme ultraviolet (EUV) and X-rays. Alternatively, an electron beam may be used in place of the light used for exposure. Extremely fine processing is possible using ultraviolet light, X-rays, or electron beams, and is therefore preferred. When exposure is performed by scanning a beam such as an electron beam, a photomath No sc is required.

[0089] For etching thin films, there are dry etching, wet etching, and sandblasting methods. etc. can be used.

[0090] First, a conductive film 131 is formed over an insulating layer 101 (FIG. 3(A)).

[0091] Next, the conductive film 131 is processed to form the pixel electrode 111 and the auxiliary wiring 1 on the insulating layer 101. Next, the end of the pixel electrode 111 and the end of the auxiliary wiring 120 are The insulating layer 104 is formed so as to cover the upper surface of the pixel electrode 111 and the auxiliary wiring (FIG. 3(C)). An opening is provided in insulating layer 104 so that the top surface of line 120 is exposed.

[0092] Next, a common layer 161a is formed using a mask 155 (FIGS. 3(C) and 4(A)). As shown in FIG. 4A, the mask 155 has a common layer at every other pixel in both the column and row directions. An opening is provided so that the pixel 130a shown in FIG. When the common layer 161a is formed, the pixel 130a and the four adjacent pixels are provided with the common layer 161a. For example, the common layer 161a is not formed in the area corresponding to the pixel 130a and the pixel 130d. The pixel 130b, the pixel 130c, and the connection portion 122 are formed in the region corresponding to the pixel 130a. The mask 155 is preferably a metal mask.

[0093] Next, the mask 155 is moved by one pixel in parallel to the insulating layer 101. The direction of movement is one direction, and may be either the column direction or the row direction in the pixel array. stomach.

[0094] Next, a common layer 161b is formed using a mask 155 (FIGS. 3(D) and 4(B)). As shown in FIG. 4B, the mask 155 is shifted by one pixel to form a common layer 161a. For example, the common layer 161b is formed on the pixel 1 The pixel electrodes 30a, 30b, and 130c are formed in the regions corresponding to the pixels 130a, 130d, and It is not formed in the region corresponding to the connection portion 122 .

[0095] In addition, the common layer 161b is formed by shifting the opening pattern of the mask 155 by one pixel. Alternatively, a different mask having a different opening pattern may be used.

[0096] As shown in FIG. 4C, the common layer 161 is formed in two steps. It can be formed in all pixels and can be prevented from being formed in the connection portion 122. By forming the through layer 161 in two separate steps, the common layer 161 is formed in one step. Therefore, the aperture ratio of the pixel can be increased.

[0097] Next, the light-emitting layers 163B, 163G, and 163R are formed in separate steps. (FIG. 3(E), FIG. 5(A)). The order of forming the light-emitting layers is not limited. In FIG. 3(E), the light-emitting layers Here is an example of forming 163B first. By forming a layer of a short wavelength color, a pixel of a different color can be formed. This may make it less likely that display defects will occur even if light-emitting materials or the like unintentionally get into the display.

[0098] In addition, layers other than the light-emitting layer may be formed for each color. After the formation of the dopant layer, a hole transport layer and a light emitting layer may be formed for each color. The reliability of the light-emitting device can be improved by forming the transmission layer and the light-emitting layer successively. As shown in FIG. 6(A), a blue hole transport layer 163B_1 is formed on the blue Then, as shown in FIG. 6B, a green light emitting layer 163B_2 is formed. 3G_1 is formed, then the green light emitting layer 163G_2 is formed, and then the As shown in FIG. 1, after the red hole transport layer 163R_1 is formed, the red light emitting layer 163R By changing the thickness of the hole transport layer for each color, optical tuning is possible in the hole transport layer. It may also have a function of adjustment.

[0099] Next, the common layer 165a is formed using the mask 155 (FIG. 5(B)). The common layer 161a is formed in the area corresponding to the pixel 130a and the pixel 130d, similarly to the common layer 161a. However, it is not formed in the regions corresponding to the pixels 130b, 130c, and the connection portion 122.

[0100] Next, the mask 155 is moved parallel to the insulating layer 101 by one pixel.

[0101] Next, the common layer 165b is formed using the mask 155 (FIG. 5(C)). b is formed in the area corresponding to the pixel 130b and the pixel 130c, similar to the common layer 161b. However, it is not formed in the regions corresponding to the pixels 130a, 130d, and the connection portion 122.

[0102] In addition, the common layer 165b is formed by shifting the opening pattern of the mask 155 by one pixel. Alternatively, a different mask having a different opening pattern may be used.

[0103] A common electrode is formed so as to cover the auxiliary wiring 120, the common layer 165a, and the common layer 165b. As a result, the auxiliary wiring 120 is formed at the connection portion 122 (FIG. 5(D)). and the common electrode 113 are connected.

[0104] As described above, not only are the light-emitting layers 163 formed for each color, but also the common layer 161 and the common layer 1 By forming 65 in two steps, the pixel aperture ratio is increased compared to forming the common layer in one step. As a result, even if the auxiliary wiring 120 is provided in the pixel portion of the display panel, The aperture ratio of the pixels of the display panel can be increased. This reduces the luminance of the sub-pixels required to obtain the desired luminance, thereby extending the life of the light-emitting element. In addition, since the width of the non-opening portion of the mask 155 is sufficiently secured, the mask 1 It is possible to apply sufficient tension to the mask 55, improving the accuracy of the mask 155. This can be done.

[0105] All layers of the EL layer are common layers provided in common to sub-pixels of multiple colors. The display panel is not limited to the color-coded type, and may be, for example, a color filter type. It can also be used.

[0106] FIG. 7A shows a top view of an EL layer 112a and an EL layer 112b included in the display panel. FIG. 7B shows a cross-sectional view taken along dashed line A7-A8 in FIG.

[0107] As shown in FIG. 7A, FIG. 7B shows the red subpixel (R) and The pixel 130a has a green subpixel (G) and a blue subpixel (B ) is a cross-sectional view including.

[0108] The display panel shown in FIG. 7B includes a pixel electrode 111 and an auxiliary wiring 120 on an insulating layer 101. The end of the pixel electrode 111 and the end of the auxiliary wiring 120 are respectively covered with the insulating layer 104. The EL layer 112 is formed on the pixel electrode 111 through the opening in the insulating layer 104. The auxiliary wiring 120, the EL layer 112a, and the EL A common electrode 113 is provided on the layer 112b. 20 is in contact with the common electrode 113. In other words, the auxiliary wiring 120 is electrically connected to the common electrode 113. The pixel electrode 111 is connected to a common electrode via the EL layer 112a or the EL layer 112b. The opposing substrate 121 has a colored layer CFR, a colored layer CFG, and a colored layer CFG on one side thereof. The counter substrate 121 is made of a hard substrate, a film, a filter, a filter layer, a filter substrate, a filter layer ... Examples of the substrate include a film substrate and a polarizing plate.

[0109] In the pixels 130a and 130d, the red subpixel (R) emits light as shown in FIG. The light-emitting element 110R includes a pixel electrode 111, an EL layer 112a, and a common The light from the light emitting element 110R is guided to the counter substrate 112 via the colored layer CFR. On the other hand, in the pixel 130b and the pixel 130c, the red subpixel The light emitting element included in (R) does not have the EL layer 112a but has the EL layer 112b.

[0110] In the pixels 130a and 130d, the green subpixel (G) emits light as shown in FIG. The light emitting element 110G includes a pixel electrode 111, an EL layer 112a, and a common The light from the light emitting element 110G is guided to the counter substrate 110G via the colored layer CFG. On the other hand, in the pixels 130b and 130c, the green subpixel The light emitting element in (G) does not have the EL layer 112a but has the EL layer 112b.

[0111] In the pixels 130b and 130c, the blue subpixel (B) emits light as shown in FIG. The light emitting element 110B includes a pixel electrode 111, an EL layer 112b, and a common The light from the light emitting element 110B is guided to the counter substrate 111 via the colored layer CFB. On the other hand, in the pixel 130a and the pixel 130d, the blue subpixel The light emitting element in (B) does not have the EL layer 112b but has the EL layer 112a.

[0112] It is preferable that the light emitting element in each sub-pixel of each color emits white light.

[0113] In the region 170, the EL layer 112a and the EL layer 112b are in contact with each other. As in the configuration shown in FIG. 1, the EL layer 112a and the EL There are also locations where the EL layers 112a and 112b overlap and locations where the EL layers 112a and 112b are separated from each other. There is a saying.

[0114] Depending on the size of the opening of the mask 155, the common layer 161a and the common layer 161b may contact each other. Even in such a case, the common layer 161 may be formed in one step or in multiple steps. For example, it may be possible to determine whether the common layer 1 formed in the first step was formed. There may be some misalignment between 61a and the common layer 161b formed the second time. Therefore, as shown in FIG. 7C, the common layer 161a of the pixel 130a and the pixel 130 a distance Wa between the common layer 161b of pixel 130b and the common layer 161a of pixel 130d There may be a difference between the distance Wb between the pixel 130c and the common layer 161b. If the common layer 161 is formed in two steps as shown in FIG. 1, the pitch of the common layer 161 becomes equal to the pitch of each row. Or each line may have a different characteristic layout. Since the pitch of the common layer 161 is different, it can be confirmed that the common layer 161 was formed in multiple steps. There are times when this happens.

[0115] In addition, when the EL layer has a highly conductive layer, adjacent emitting layers may be connected via the highly conductive layer. Current may leak into the optical element, causing light to be emitted by elements other than the desired light-emitting element (crosstalk). The common layer 161 shown in FIG. 7(C) is provided separately for each pixel. Therefore, crosstalk can be suppressed.

[0116] The arrangement of the sub-pixels is not limited to the configuration shown in FIG. 1A. 8(A) and (B) show a sub-pixel arrangement different from that shown in FIG. FIG. 8(A) shows an example of a stripe array, and FIG. 8(B) shows a matrix array. In addition, the sub-pixel arrangement can be an S-stripe arrangement, a pen A tile array, a Bayer array, etc. can be applied.

[0117] The colored layer is a colored layer that transmits light of a specific wavelength range. For example, red, green, blue, or yellow. A color filter that transmits light in the wavelength range of the color can be used. Materials that can be used include metal materials, resin materials, and resin materials containing pigments or dyes. Some examples include:

[0118] The light-shielding layer BM is provided between adjacent colored layers. The colored layer is formed on the edge of the light emitting element, and the color mixture between the adjacent light emitting elements is suppressed. By providing the light shielding layer BM so as to overlap the light shielding layer BM, light leakage can be suppressed. The BM may be a material that blocks light emitted from the light-emitting element, such as a metal material. Alternatively, a black matrix may be formed using a resin material containing a pigment or dye. If the light-shielding layer BM is provided in an area other than the pixel area, such as the driving circuit, the light guided by the light emitting diode may be blocked. This is preferable because it can suppress unintended light leakage due to the

[0119] [Display panel example 2] FIG. 10A shows a top view of the display panel 10A. FIG. 10B shows a top view of the display panel 10A. FIG. 10B is a cross-sectional view taken along the dashed line B1-B2 in FIG. Equivalent.

[0120] The display panel 10A shown in FIG. 10A includes a pixel portion 71 and a driver circuit 78. The panel is connected to FPC74. The display panel is connected to FPC (Flexible P It is possible to connect connectors such as printed circuits and ICs (integrated circuits). For example, the scanning line driver circuit can be built into the display panel, and the signal line driver circuit can be attached externally. Thus, a display module can be produced.

[0121] The display panel 10A is a top-emission display panel that uses a color-coded method. Since the display panel 10A has auxiliary wiring, the voltage caused by the resistance of the common electrode 113 This suppresses the drop and reduces display unevenness. Since the display panel 10A is formed in separate steps, even if the pixel section 71 has auxiliary wiring, The pixel aperture ratio is high.

[0122] As shown in FIG. 10B, the display panel 10A includes a substrate 361, an insulating layer 367, a transistor, and a 301, 303, conductive layer 307, insulating layer 314, light emitting elements 20A, 20B, 21A, The insulating layer 104, the protective layer 109, the auxiliary wiring 120a, 120b, the adhesive layer 318, and the substrate 3 He has 71 etc.

[0123] The light emitting elements 20A, 20B, and 21A each include a pixel electrode 111a, a pixel electrode 111b, an EL layer, and a common electrode 113 .

[0124] The pixel electrode 111a is electrically connected to the source or drain of the transistor 303. These may be connected directly or through other conductive layers.

[0125] The pixel electrodes 111b of the light emitting elements 20A, 20B, and 21A function as an optical adjustment layer. By applying a microcavity structure to the light-emitting element, color purity can be improved from the display panel. The pixel electrode is not limited to a laminated structure, but may be a single-layer structure. Good too.

[0126] The insulating layer 104 covers the ends of the pixel electrodes 111a and 111b. The electrodes are electrically insulated by an insulating layer 104. The pixel electrodes are also connected to the auxiliary wiring. are also electrically insulated by the insulating layer 104.

[0127] The EL layer is a common layer provided in common to sub-pixels of multiple colors (in FIG. 10B, common layer 1 61 and a common layer 165), and a layer provided for each color (light-emitting layer 163 in FIG. 10B). Here, the light emitting element 20A shown in FIG. 10(B) is in the same pixel as the light emitting element 20B. The pixel including the light emitting element 21A is different from the pixel including the light emitting element 21A. The pixel in which the light emitting element 20A is included is adjacent to the pixel in which the light emitting element 20A is included. Both of the optical elements 20B have a common layer 161a and a common layer 165a. The light emitting element 21A included in the pixel adjacent to the pixel including the light element is provided with a common layer 161b and a common In the region 172, the common layer 161a and the common layer 161b are spaced apart from each other. Similarly, the common layer 165a and the common layer 165b are spaced apart from each other. The optical element 21A has a light emitting layer 163A, and the light emitting element 20B has a light emitting layer 163B. Here, the subpixel having the light-emitting element 20A has the same structure as the subpixel having the light-emitting element 21A. The EL layer 10A exhibits a different color from the sub-pixel having the light-emitting element 20B. The ends of the EL layer are covered by a common electrode 113. The common electrode 113 covers the ends of the EL layer. The common electrode 113 is in contact with the insulating layer 104 at the outer side of the end of the L layer. At 2, it is in contact with the auxiliary wiring 120b.

[0128] The protective layer 109 covers the edge of the common electrode 113 and is in contact with the insulating layer 1 Furthermore, the protective layer 109 is in contact with the edge of the display panel 10A and in the vicinity thereof. The end of the insulating layer 314 and the end of the insulating layer 104 are covered, and the end of the insulating layer 314 and the insulating The layer 104 is in contact with the insulating layer 313 at the outer side of the edge of the layer 104. In the seed insulating layer and the protective layer 109, the inorganic film (or the inorganic insulating film) is closer to the end of the organic film than to the end of the inorganic film. The end portion is provided so as to be located on the outside, and an inorganic film is provided at the end portion of the display panel and in the vicinity thereof. It is preferable that the insulating films (or inorganic insulating films) are laminated in contact with each other. This makes it difficult for impurities such as moisture to enter the module from the outside, preventing the deterioration of transistors and light-emitting elements. It can be suppressed.

[0129] The auxiliary wirings 120 a and 120 b are electrically connected to the common electrode 113 through the openings in the insulating layer 104 . The auxiliary wiring 120a is made of the same material and in the same process as the pixel electrode 111a. The auxiliary wiring 120b can be formed using the same material and process as the pixel electrode 111b. It can be formed in a process.

[0130] The auxiliary wiring of the common electrode 113 is not limited to being formed in the same process as the pixel electrode. For example, the auxiliary wiring may be at least one of various wirings of a display panel or an electrode of a transistor. The auxiliary wiring can be formed of the same material and in the same process as the display panel. By forming it in the same layer as other conductive layers, it is possible to reduce the number of steps required for forming the display panel. In addition, the auxiliary wiring may be provided on the display panel. By forming the auxiliary wiring in a layer separate from the other conductive layers, the auxiliary wiring can be provided over a wide area. Therefore, the voltage drop caused by the resistance of the common electrode 113 can be more effectively suppressed.

[0131] In FIG. 11, the auxiliary wiring 120 is made of the same material as the source and drain of the transistor. An example formed in this process is shown below.

[0132] In addition, in FIG. 11, all layers of the EL layer are provided in common to the sub-pixels of multiple colors. The EL layer has at least a light-emitting layer. The light-emitting element 20A is a light-emitting element. The light emitting element 21 is included in the same pixel as the light emitting element 20B, and is included in a different pixel from the light emitting element 21A. The pixel including A is adjacent to the pixel including the light emitting element 20A. Both the light emitting element 20A and the light emitting element 20B have an EL layer 112a. The light emitting element 21A included in the pixel adjacent to the pixel including the light emitting element has an EL layer 112b. In the region 172, the EL layer 112a and the EL layer 112b are spaced apart. The EL layer is covered with a common electrode 113. The common electrode 113 covers the edge of the EL layer. The common electrode 113 is in contact with the insulating layer 104 at the outer side of the end of the common electrode 113. In FIG. 11, the EL layer 112a and the EL layer 112b are in contact with each other. Although the EL layer is shown as a three-layer structure, the number of layers is not limited. The light emitting element 20A and the light emitting element 21 are disposed on the substrate 10. The light emitting element 20A and the light emitting element 21 are disposed on the substrate 10. A overlaps with the colored layer CFA. The sub-pixel having the light-emitting element 20B and the sub-pixel having the light-emitting element 21A exhibit the same color. The color layer CFB overlaps the light emitting element 20A. 20B shows an example where the sub-pixels having different colors.

[0133] For the light emitting elements and auxiliary wiring, the explanation in the specific example 1 of the display panel can also be referred to.

[0134] The display panel preferably has a protective layer 109 that covers the light-emitting elements. By using a film with high barrier properties, impurities such as moisture and oxygen are prevented from entering the light-emitting element. This can suppress the deterioration of the light emitting element and improve the reliability of the display panel. This can be done.

[0135] The light emitted from the light emitting element is taken out to the outside of the display panel through the protective layer 109. Layer 109 is preferably highly transparent to visible light.

[0136] The protective layer 109 preferably has an inorganic film (or an inorganic insulating film). By covering it with a film, it is possible to prevent impurities such as moisture and oxygen from entering the light-emitting element from the outside. The organic compounds and metal materials that compose the light-emitting element react with impurities, For this reason, it is necessary to apply a structure in which impurities are unlikely to enter the light-emitting element. This can suppress deterioration of the light-emitting element and improve the reliability of the light-emitting element.

[0137] It is preferable that the inorganic film (or inorganic insulating film) has high moisture resistance and is difficult for water to diffuse or penetrate. Furthermore, the inorganic film (or inorganic insulating film) is a material that allows hydrogen and / or oxygen to diffuse and permeate. This makes it possible to make the inorganic film (or inorganic insulating film) function as a barrier film. In addition, it is possible to effectively prevent impurities from diffusing into the light emitting element from the outside. This effectively suppresses the noise and realizes a highly reliable display panel.

[0138] The protective layer 109 preferably has one or more insulating layers. An insulating film, a nitride insulating film, an oxynitride insulating film, a nitride oxide insulating film, etc. can be used. Examples of the insulating film include a silicon oxide film, an aluminum oxide film, a gallium oxide film, and a germanium oxide film. tungsten oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film , hafnium oxide film, and tantalum oxide film. Examples of the oxide nitride insulating film include a silicon film and an aluminum nitride film. Examples of the nitride oxide insulating film include a silicon nitride oxide film. Can be obtained.

[0139] In this specification and elsewhere, an oxynitride is a compound having a composition containing more oxygen than nitrogen. Nitrogen oxide refers to a material that contains more nitrogen than oxygen in its composition. Refers to the material.

[0140] In particular, the silicon nitride film, the silicon nitride oxide film, and the aluminum oxide film each have a moisture-proof property. Since it has high thermal conductivity, it is suitable as the protective layer 109.

[0141] The protective layer 109 is made of ITO, Ga-Zn oxide, Al-Zn oxide, or In- An inorganic film containing Ga-Zn oxide or the like can also be used. The inorganic film has high resistance. It is preferable that the resistance of the common electrode 113 is higher than that of the common electrode 113. The inorganic film may further contain nitrogen.

[0142] The protective layer 109 can be formed by using a CVD method, a sputtering method, an ALD method, or the like. The protective layer 109 is made of two or more insulating films formed by different film forming methods. It may be laminated.

[0143] The sputtering method and the ALD method enable film formation at low temperatures. Therefore, the protective layer 109 formed after the light-emitting element is fabricated is relatively It is preferable to form the film at a relatively low temperature, typically 100° C. or less. Method D is suitable.

[0144] The thickness of the inorganic film formed by the sputtering method is preferably 50 nm or more and 1000 nm or less. The thickness is preferably 100 nm or more and 300 nm or less, and more preferably 100 nm or more and 300 nm or less.

[0145] The thickness of the inorganic film formed by the ALD method is preferably 1 nm or more and 100 nm or less, and more preferably 5 nm or more. More preferably, m is equal to or larger than 50 nm.

[0146] The water vapor permeability of the protective layer 109 is 1×10 -2 g / (m 2 Less than 5 days, preferably ×10 -3 g / (m 2 ·day) or less, preferably 1×10 -4 g / (m 2 ·day) Lower, preferably 1×10 -5 g(m 2 ·day) or less, preferably 1×10 -6 g / (m 2 The lower the water vapor permeability, the more the transistors and light-emitting elements can be protected from external This can reduce the diffusion of water into the

[0147] The thickness of the protective layer 109 is 1 nm or more and 1000 nm or less, and is preferably 50 nm or more and 500 nm or less. The thinner the insulating layer, the better. In this case, the thickness of the entire display panel can be reduced, which is preferable. This improves throughput and increases the productivity of display panels.

[0148] Examples of organic insulating materials that can be used for the insulating layer 104 include acrylic resin, epoxy resin, and the like. Resin, polyimide resin, polyamide resin, polyimideamide resin, polysiloxane resin Examples of the insulating layer 10 include resins, benzocyclobutene-based resins, and phenolic resins. Instead of the protective layer 109, an inorganic insulating layer may be used. Inorganic insulating films capable of doing so can be used.

[0149] When an inorganic insulating film is used as the insulating layer covering the edge of the pixel electrode, In comparison, impurities are less likely to enter the light-emitting element, and the reliability of the light-emitting element can be improved. When an organic insulating film is used as the insulating layer covering the edge of the electrode, the Therefore, it has high step coverage and is not easily affected by the shape of the pixel electrode. This can prevent the risk of data corruption.

[0150] The insulating layer 104 and the protective layer 109 are either an inorganic insulating film or an organic insulating film. The laminate may have a single layer structure or a laminate structure using either or both of them.

[0151] The substrate 361 and the substrate 371 are bonded together by an adhesive layer 318. The space 105 sealed by the substrate 371 and the adhesive layer 318 is filled with an inert gas such as nitrogen or argon. It is preferably filled with a gas or a resin.

[0152] The substrate 361 and the substrate 371 are made of a material such as glass, quartz, resin, metal, alloy, or semiconductor. The substrate on the side from which light is extracted from the light emitting element is made of a material that transmits the light. It is preferable to use a flexible substrate as the substrate 361 and the substrate 371. Furthermore, the substrate 361 or the substrate 371 may be a polarizing plate.

[0153] In addition, when a circularly polarizing plate is laminated on a display panel, the substrate of the display panel is provided with an optically isotropic It is preferable to use a substrate with high optical isotropy. A substrate with high optical isotropy has low birefringence (amount of birefringence is small).

[0154] The absolute value of the retardation (phase difference) value of a substrate having high optical isotropy is preferably 30 nm or less. The thickness is preferably 20 nm or less, more preferably 10 nm or less.

[0155] Triacetyl cellulose (TAC, cellulose triacetate) is an example of a film with high optical isotropy. (also called acetate) film, cycloolefin polymer (COP) film, cyclo Examples include olefin copolymer (COC) film and acrylic film.

[0156] In addition, when a film is used as a substrate, the film absorbs water and causes wrinkles in the display panel. Therefore, the substrate is made of a film with low water absorption. For example, it is preferable to use a film having a water absorption rate of 1% or less. It is preferable to use a film having a thickness of 0.1% or less, and it is more preferable to use a film having a thickness of 0.01% or less. It is more preferable to use

[0157] The adhesive layer may be a photo-curable adhesive such as an ultraviolet curable adhesive, a reactive curable adhesive, a heat curable adhesive, or an antibacterial adhesive. Various curing adhesives such as vapor-curing adhesives can be used. Also, adhesive sheets, etc. can be used. Good too.

[0158] The driver circuit 78 includes a transistor 301. The pixel portion 71 includes a transistor 303. .

[0159] Each transistor includes a gate, a gate insulating layer 311, a semiconductor layer, a back gate, a source, and The gate (FIG. 10(B) and the lower gate in FIG. 11) and the semiconductor layer are The back gate (FIG. 10(B), the upper gate in FIG. 11) overlaps the gate insulating layer 311. The insulating layer 312 and the semiconductor layer overlap with each other with an insulating layer 313 interposed therebetween.

[0160] In the transistors 301 and 303, a semiconductor layer in which a channel is formed is sandwiched between two gates. The configuration is applied by connecting two gates and supplying the same signal to them. It is preferable to drive the transistor by a It is possible to increase the field effect mobility compared to conventional MOSFETs, and to increase the on-current. As a result, a circuit capable of high speed operation can be fabricated. It is possible to reduce the area occupied by the device by using a transistor with a large on-state current. When the display panel or display device is enlarged or has high resolution, the number of wirings increases. Even if the signal delay in each wiring is small, it is possible to reduce the unevenness of the display. Alternatively, a potential for controlling the threshold voltage can be applied to one of the two gates, and the other By applying a driving potential to one side, the threshold voltage of the transistor can be controlled. .

[0161] The transistor structures may be different between the driver circuit 78 and the pixel section 71. Each of the pixel portion 8 and the pixel portion 71 may have a plurality of types of transistors.

[0162] Transistors, capacitors, wiring, etc. are arranged so as to overlap with the light-emitting region of the light-emitting element. Therefore, the aperture ratio of the pixel portion 71 can be increased.

[0163] At least one of the insulating layers 312, 313, and 314 is impregnated with water or It is preferable to use a material that is difficult for impurities such as hydrogen to diffuse into. This effectively prevents the diffusion of ions into the display, improving the reliability of the display panel. The insulating layer 314 functions as a planarization layer.

[0164] The insulating layer 367 functions as a base film. It is preferable to use a material in which impurities are less likely to diffuse.

[0165] The connection portion 306 includes a conductive layer 307. The conductive layer 307 is a layer that connects the source and drain of a transistor. The conductive layer 307 can be formed of the same material and in the same process as the driving circuit. The line 78 is electrically connected to an external input terminal that transmits a signal or potential from the outside. In this example, an FPC 74 is provided as an external input terminal. 4 and the conductive layer 307 are electrically connected.

[0166] The connector 319 may be made of various anisotropic conductive films (ACFs). Conductive Film and Anisotropic Conductive Paste (ACP) pic Conductive Paste) can be used.

[0167] [Specific examples of display devices] Next, a display device having a plurality of display panels will be described with reference to FIG.

[0168] FIG. 12(A) shows a top view of the display panel DP, and FIGS. 12(B) and 12(C) show FIG. 1 shows a perspective view of a display device having four DPs.

[0169] A plurality of display panels DP can be arranged in one or more directions (for example, in a line or in a matrix). In this way, a display device having a wide display area can be manufactured.

[0170] When creating a large display device using multiple display panels DP, The size does not need to be large. Therefore, the manufacturing apparatus for manufacturing the display panel DP In addition, it is possible to reduce space by not having to enlarge the display panel. Therefore, it is not necessary to use a new manufacturing device to enlarge the display device. This allows the manufacturing cost to be reduced. This can suppress the decrease in the

[0171] When the size of the display panel DP is the same, compared to a display unit with one display panel DP A display unit with multiple display panels DP has a larger display area and can display more information at one time. It has the effect of having a large amount.

[0172] Here, a case will be considered in which the display panel DP has a non-display area surrounding the pixel portion 71. In this case, for example, if the output images of multiple display panels DP are combined to display one image, , the single image will be perceived as separate by a user of the display device.

[0173] By narrowing the non-display area of ​​the display panel DP (using a narrow-frame display panel DP), This can prevent the display on the display panel DP from appearing separated, but the non-display area of ​​the display panel DP It is difficult to completely eliminate the area.

[0174] In addition, if the area of ​​the non-display region of the display panel DP is small, the edge of the display panel DP and the display panel The distance between the elements in the DP becomes shorter, and impurities enter the display panel from outside, The element may be easily deteriorated.

[0175] Therefore, in one embodiment of the present invention, the multiple display panels DP are arranged so that they partially overlap each other. Of the two display panels DP, at least the display panel D located on the display surface side (upper side) P has a region 72 that transmits visible light adjacent to the pixel portion 71. The pixel section 71 of the display panel DP arranged on the lower side and the pixel section 72 of the display panel DP arranged on the upper side The region 72 that transmits visible light overlaps with the pixel region 72 of the two overlapping display panels DP. 71, the hidden area between the This makes it possible to realize a large display device in which the seams of the display panel DP are difficult for the viewer to notice. do.

[0176] At least a part of the non-display area of ​​the upper display panel DP is a visible light transmitting area. 72, which can be overlapped with the pixel section 71 of the display panel DP located below. At least a part of the non-display area of ​​the lower display panel DP is The pixel area 71 of the panel DP or the area 73 that blocks visible light can be overlapped. The area of ​​the display device is not affected by the narrowing of the frame (reduction of the area other than the pixel area). There is no need to reduce the product.

[0177] If the non-display area of ​​the display panel DP is large, the edge of the display panel DP and the elements in the display panel DP The distance between the display panel and the display element becomes longer, and impurities entering the display panel from outside can cause the element to deteriorate. For example, when an organic EL element is used as a display element, the display panel The longer the distance between the edge of the DP and the organic EL element, the greater the resistance to moisture and acid from outside the display panel DP. This makes it difficult for impurities such as fluorine and the like to penetrate (or reach) the organic EL element. In the display device of one embodiment, the area of ​​the non-display region of the display panel DP is sufficiently secured, so that Realization of a highly reliable large-sized display device, even when using a display panel DP that uses electroluminescent elements, etc. can.

[0178] In this way, when a display device is provided with a plurality of display panels DP, adjacent display panels D It is preferable that the plurality of display panels DP are arranged so that the pixel sections 71 are continuous between the display panels P. I wish.

[0179] The display panel DP shown in FIG. 12(A) includes a pixel section 71, a region 72 that transmits visible light, and a The visible light-transmitting region 72 and the visible light-blocking region 73 are Each of them is provided adjacent to the pixel portion 71. In FIG. An example where C74 is provided is shown below.

[0180] The pixel section 71 includes a plurality of pixels. The region 72 that transmits visible light includes a display panel D A pair of substrates constituting P, and a seal for sealing a display element sandwiched between the pair of substrates In this case, the part provided in the region 72 that transmits visible light may be The material is a material that is transparent to visible light. Wiring electrically connected to the pixels included in the section 71 may be provided. In the region 73 that blocks visible light, a scanning line driving circuit and / or a signal line driving circuit are provided. In addition, the visible light blocking area 73 may include a terminal connected to the FPC 74, Wiring or the like connected to the terminal may be provided.

[0181] 12B and 12C show the display panel DP shown in FIG. 12A arranged in a 2×2 matrix. (Two in the vertical and two in the horizontal directions) is an example of the arrangement. 12(A) is a perspective view of the display surface side of the display panel DP, and FIG. 12(B) is a perspective view of the opposite side to the display surface of the display panel DP. FIG.

[0182] The four display panels DP (display panels DPa, DPb, DPc, DPd) overlap each other. Specifically, the visible light of one display panel DP is A region 72 that transmits light is overlapped on the upper side (display surface side) of a pixel portion 71 of another display panel DP. The display panels DPa, DPb, DPc, and DPd are arranged so as to have an area In addition, the visible light blocking area 73 of one display panel DP is the visible light blocking area of ​​the other display panel DP. The display panels DPa, DPb, DPc, and DPd are arranged so as not to overlap the pixel portion 71. In the area where the four display panels DP overlap, a display panel DPa is placed on top of the display panel DPa. DPb overlaps with DPc on the display panel DPb, and DPc overlaps with DPc on the display panel DPb. The display panel DPd is overlapping.

[0183] The short sides of the display panels DPa and DPb overlap each other, and a part of the pixel section 71a and a The display panels DPa and DPc are overlapped with a part of the transparent region 72b. The pixel portions 71a and the visible light transmitting region 72c are overlapped with each other. They overlap.

[0184] A part of the pixel portion 71b is a part of a region 72c that transmits visible light, and a part of a region 72b that transmits visible light. A part of the pixel portion 71c overlaps with a part of the region 72d that transmits visible light. It overlaps with part of d.

[0185] Therefore, the area in which the pixel sections 71a to 71d are arranged almost seamlessly is called the display area of ​​the display device. It can be area 79.

[0186] Here, it is preferable that the display panel DP is flexible. For example, the display panel D The pair of substrates constituting P are preferably flexible.

[0187] As a result, for example, as shown in FIG. 12(B) and (C), the FPC 7 of the display panel DPa 4a is curved, and the lower side of the pixel portion 71b of the display panel DPb adjacent to the FPC 74a is A part of the display panel DPa and a part of the FPC 74a can be disposed on the substrate 74. As a result, FPC74a can be positioned without physically interfering with the rear surface of the display panel DPb. In addition, when the display panels DPa and DPb are stacked and fixed, the FPC Since there is no need to consider the thickness of 74a, the upper surface of the region 72b that transmits visible light and the display panel As a result, the difference in height between the display panel DPa and the upper surface of the pixel portion 71a can be reduced. The edges of the panel DPb can be made less noticeable.

[0188] Furthermore, by providing each display panel DP with flexibility, the pixel portion 71b of the display panel DPb The height of the upper surface of the display panel DPa is set to be equal to the height of the upper surface of the pixel portion 71a of the display panel DPa. Thus, the display panel DPb can be curved gently. Except for the area where Pa and the display panel DPb overlap, the height of each display area can be made uniform. This makes it possible to improve the display quality of the image displayed in the display area 79.

[0189] In the above, the relationship between the display panels DPa and DPb has been described as an example. The same is true between the two display panels DP.

[0190] In order to reduce the step between two adjacent display panels DP, the thickness of the display panel DP is For example, the thickness of the display panel DP is preferably 1 mm or less, and It is more preferable that the thickness is 1 μm or less, and further preferably 100 μm or less.

[0191] [Display panel example 3] 13A and 13B are top views of the display panel 15A. A cross-sectional view taken along line C1-C2 is shown in FIG.

[0192] The display panel shown in FIGS. 13A and 13B includes a pixel section 71, a region 72 that transmits visible light, and and a driving circuit 78. The display panel is connected to an FPC 74. In FIG. 1B, a region 72 that transmits visible light is adjacent to a pixel section 71 and is arranged along two sides of the pixel section 71. An example of the layout is shown below.

[0193] The corners of the display panel shown in FIG. 13(A) are angular, and the corners of the display panel shown in FIG. 13(B) are angular. The corners of the film substrate are rounded. Display panels using the film substrate can be manufactured in various top shapes. For example, a display panel having a curved corner can be used to improve the image quality of the display panel. It may be easier to manufacture because cracks are less likely to occur when it is cut.

[0194] The display panel 15A is a top-emission display panel that uses a color-coded method. The display panel 15A has a region 72 that transmits visible light on two sides. Since the wiring of the common electrode 113 cannot be arranged in the transparent region 72, the influence of the voltage drop When a voltage drop occurs, the display panel 15A is used in a plurality of cases, as shown in FIG. When manufacturing a display device, the discontinuity in luminance between adjacent display panels affects the luminance of the entire display device. However, since the display panel 15A has auxiliary wiring, This makes it possible to suppress the voltage drop caused by the resistance of the electrode 113 and reduce display unevenness. In addition, since the common layer included in the EL layer is formed in two separate steps, the display panel 15A has a pixel Even if the portion 71 has an auxiliary wiring, the aperture ratio of the pixel is high.

[0195] As shown in FIG. 13C, the display panel 15A includes a substrate 361, an adhesive layer 363, an insulating layer 364, and a 65, transistors 301, 303, conductive layer 307, insulating layer 314, light emitting element 20A, 2 0B, 21A, insulating layer 104, protective layer 109, auxiliary wiring 120a, 120b, adhesive layer 31 7, and a substrate 371.

[0196] The substrate 361 and the substrate 371 are bonded together by an adhesive layer 317. 61 and the insulating layer 365 are bonded together by an adhesive layer 363 .

[0197] The display panel 15A is a substrate 361 on which transistors, light emitting elements, etc., formed on a manufacturing substrate are mounted. This is a configuration formed by transposing it upwards.

[0198] The light emitting elements 20A, 20B, and 21A each include a pixel electrode 111a, a pixel electrode 111b, an EL layer, and a common electrode 113 .

[0199] The pixel electrode 111a is electrically connected to the source or drain of the transistor 303. These may be connected directly or through other conductive layers.

[0200] The pixel electrodes 111b of the light emitting elements 20A, 20B, and 21A function as an optical adjustment layer. FIG. 10B and other figures show an example in which the pixel electrode 111b covers the pixel electrode 111a. However, as shown in FIG. 13(C), the pixel electrode 111b does not cover the side surface of the pixel electrode 111a. It's okay.

[0201] The driver circuit 78 includes a transistor 301. The pixel portion 71 includes a transistor 303. .

[0202] Each transistor includes a back gate, a gate insulating layer 311, a semiconductor layer, a gate insulating layer, and a gate The semiconductor layer has a channel forming region, an insulating layer 315, a source, and a drain. A back gate (the lower gate in FIG. 13C) and a channel The formation regions overlap each other via a gate insulating layer 311. The gate insulating layer overlaps the channel forming region. Each of them is electrically connected to the low resistance region through an opening provided in the insulating layer 315 .

[0203] The pixel portion 71, the driving circuit 78, and the connection portion 306 of the display panel 15A shown in FIG. The configuration is similar to that of the display panel 10A (FIG. 10(B)) in many respects, so the above description will be the same. You can refer to the explanation.

[0204] Each layer included in the region 72 that transmits visible light transmits visible light. The visible light transmitting region 72 is formed by the substrate 361, the adhesive layer 363, the insulating layer 365, the gate insulating layer 366, and the gate insulating layer 367. 11, an example having an insulating layer 315, a protective layer 109, an adhesive layer 317, and a substrate 371 is shown. In this laminated structure, the materials of each layer are selected so that the difference in refractive index at each interface is small. It is preferable that the refractive index of the two adjacent layers is small so that the user can see the two displays. The panel seams become less visible.

[0205] The visible light transmitting region 72 is a portion of the pixel section 71 adjacent to the visible light transmitting region 72. It is preferable that the number of insulating layers is smaller than that of the insulating layer 72 that transmits visible light. By reducing the number of layers, it is possible to reduce the number of interfaces with large differences in refractive index. Therefore, reflection of external light in the region 72 that transmits visible light can be suppressed. The visible light transmittance of the light transmitting region 72 can be increased. A portion of the display panel that is viewed through the region 72 that transmits visible light. The difference in luminance (brightness) between the area and the area that is not visible through the area can be reduced. Therefore, uneven display or uneven brightness of the display device can be suppressed.

[0206] FIG. 13C is a cross-sectional view of an example of a display device having two display panels 15A shown in FIG. Shown in Figure 14.

[0207] In the display device shown in FIG. 14, the display panel located on the display surface side (upper side) is a The pixel portion 71 of the lower display panel has a region 72 adjacent to the pixel portion 71. The visible light transmitting region 72 of the lower display panel overlaps the visible light transmitting region 72 of the lower display panel. The visible light blocking area (drive circuit 78, connection section 306, etc.) is the pixel area of ​​the upper display panel. 71. Therefore, the non-display area between the pixel portions of the two overlapping display panels is This allows the user to see the display panel from a distance. It is possible to realize a large display device that is difficult for the eye to notice.

[0208] In addition, the display device shown in FIG. 14 has a pixel section 71 of the lower display panel and a pixel section 72 of the upper display panel. Between the region 72 that transmits visible light, a light-transmitting layer 1 that has a refractive index higher than that of air and transmits visible light is provided. This prevents air from getting between the two display panels, and the refractive index This can reduce reflections at the interface due to the difference in the thickness of the substrate. Furthermore, it is possible to suppress uneven brightness.

[0209] Next, the configuration of the common layer in the region N shown in FIG. 13(A) will be described with reference to FIG. Here, a common layer 161a and a common layer 161b are formed using one mask 155. This section explains what happens when

[0210] As shown in FIG. 15A, after forming the common layer 161a using the mask 155, 155 is shifted by one pixel in the X or Y direction, the same mask 155 is used to create the common layer 16 In FIG. 15B, the mask 155 is shifted by one pixel in the X direction. Here, as shown in FIG. 15(B), the common layer 161b is formed. The layer 161b is also formed in the region 72 that transmits visible light at every other pixel in the Y direction. FIG. 15C shows a top view of the common layer 161a and the common layer 161b. As shown in FIG. 5(D), the common electrode 113 is a common electrode formed in the region 72 that transmits visible light. The common electrode 113 covers the layer 161b, and the end of the common electrode 113 is positioned outside the end of the common layer 161b. In particular, the end of the common electrode 113 is preferably in contact with the inorganic film. As a result, in the region 72 that transmits visible light, The intrusion of impurities can be suppressed.

[0211] The above configuration is not limited to the region N shown in FIG. 13(A), but may be applied to the region N shown in FIG. In other words, the common layer 161a and the common layer 161b can be formed by using one mask. When forming the common layer 161b, the common layer 161a or the common layer 161b is formed on the outside of the pixel portion 71 of the display panel. In this respect, the common layer 161 is formed in a plurality of steps. This is a feature obtained by the above, that is, a feature in one aspect of the present invention.

[0212] In addition, a modified example of the display panel is shown in Fig. 16(A) and (B). The display panel is formed by attaching a protective layer 375 and a light-shielding layer BM formed on a substrate 371. The substrate 371 and the protective layer 375 are attached to each other by the adhesive layer 373. In this way, the protective layer 109 is not provided on the light emitting element, and the counter substrate A protective layer may be provided on the side.

[0213] In FIG. 16A, the source or drain of a transistor 303 and a pixel electrode of a light-emitting element 111a are electrically connected to the light emitting element 111a via the conductive layer 128a. A conductive layer may be provided between the transistor 303 and the transistor 304. A conductive layer 128a is provided on the insulating layer 314a covering the conductive layer 128a. b is provided on the insulating layer 314b, and the pixel electrode 111a is provided on the insulating layer 314b. a is connected to the conductive layer 128a through an opening in the insulating layer 314b, and the conductive layer 128a is The source or drain of the transistor 303 is connected through an opening in the edge layer 314a. Furthermore, a conductive layer 128b is provided on the insulating layer 314a. The conductive layer 128b can be formed using the same material and in the same process as the conductive layer 128a. Since the common electrode 113 is electrically connected to the common electrode 113, the common electrode 113 functions as an auxiliary wiring. In the connection portion 122, the common electrode 113 is connected to the insulating layer 104 through an opening. The auxiliary wiring 120b is provided on and in contact with the auxiliary wiring 120a. The auxiliary wiring 120a is connected to the conductive layer 128b through an opening in the insulating layer 314b. In this way, the common electrode 113 is connected to the conductive layer of the same layer as the pixel electrode and the other layers. The auxiliary wiring 120a and the conductive layer of the wire 120b may be electrically connected to each other. Alternatively, the common electrode 113 and the conductive layer 128b may be directly connected without providing the conductive layer 0b.

[0214] FIG. 16B shows a layer of the auxiliary wiring 120, which is a layer of a transistor, wiring, and a layer of a light-emitting element. In this example, a layer of only the auxiliary wiring 120 is provided separately from the auxiliary wiring 12. 0 can be provided over a wide area. This reduces the voltage caused by the resistance of the common electrode 113. In FIG. 16B, the insulating layer 314a is provided with a A conductive layer 128 is provided, an insulating layer 314b is provided over the conductive layer 128, and the insulating layer 314b An auxiliary wiring 120 is provided on the insulating layer 314c. The common electrode 113 and the auxiliary wiring are connected to each other through openings provided in the insulating layer 104 and the insulating layer 314c. 120 is electrically connected to the conductive layer 120 through an opening provided in the insulating layer 314a. The insulating layer 314b and the insulating layer 314c are electrically connected to the transistor. The pixel electrode and the conductive layer 128 are electrically connected through the opening.

[0215] [Display panel example 4] FIG. 17A shows a top view of the display panel 15B. A cross-sectional view of the C4 section is shown in FIG.

[0216] The display panel 15B shown in FIG. 17A includes a pixel section 71, a region 72 that transmits visible light, and The display panel 15B includes a driving circuit 78. The display panel 15B is connected to an FPC 74. 15A (FIG. 13(A)) is configured so that the FPC 74 is connected to the display surface side, The panel 15B is configured so that the FPC 74 is connected to the side opposite the display surface (the back side). In FIG. 17(A), a region 72 that transmits visible light is adjacent to a pixel portion 71 and is arranged on two sides of the pixel portion 71. An example of the arrangement along the line is shown below.

[0217] The display panel 15A and the display panel 15B differ mainly in the configuration of the connection portion 306.

[0218] In the connection portion 306 of the display panel 15B, the conductive layer 309 and the FPC 74 are connected via a connector 319. The conductive layer 309 is electrically connected to the conductive layer 308 through an opening in the insulating layer 365. and is electrically connected to

[0219] Next, a method for manufacturing the display panel 15B will be described with reference to FIG. Reveal.

[0220] First, a peeling layer 353 is formed on a preparation substrate 351, and a layer to be peeled is formed on the peeling layer 353. (FIG. 18(A)). As the layer to be peeled off, first, a conductive layer 309 is formed on a peeling layer 353, An insulating layer 365 is formed on the release layer 353 and the conductive layer 309, and the conductive layer 309 is bonded to the insulating layer 365. An opening is provided so as to overlap with the conductive layer 309. Then, a conductive layer 308 is formed so as to be connected to the conductive layer 309 through the opening. The conductive layer 308 is formed using the same material and process as the gate of the transistor. The source and drain of the transistor can be formed using the same material and process. Then, the gate insulating layer 311 through the substrate 371 are formed in this order.

[0221] Next, the formation substrate 351 is peeled off. In FIG. 18(B1), the peeling layer 353, the conductive layer 309, and This shows an example in which peeling occurs at the interface between the conductive layer 309 and the insulating layer 365. Then, as shown in FIG. 18(C1), the conductive layer 30 is formed by using the connector 319. 9 and the FPC 74 can be electrically connected.

[0222] Also, as shown in FIG. 18(B2), peeling may occur in the peeling layer 353. The peeling layer 353a remains on the side of the preparation substrate 351, and the peeling layer 353b is in contact with the conductive layer 309. If the conductive layer 309 is not exposed after the preparation substrate 351 is peeled off, the peeling layer 3 It is preferable to remove a portion of 53b to expose the conductive layer 309. 18(C2), the conductive layer 309 and the FPC 74 are electrically connected by a connector 319. can be connected to

[0223] The substrate 351 to be fabricated has a rigidity sufficient for easy transportation and is resistant to the temperatures involved in the fabrication process. The formation substrate 351 can be made of, for example, glass. Examples include glass, quartz, ceramic, sapphire, resin, semiconductor, metal and alloy. Examples of the glass include non-alkali glass, barium borosilicate glass, and aluminoborose glass. Examples of the suitable materials include fluorine-containing glass.

[0224] The release layer 353 can be formed using an organic material or an inorganic material.

[0225] Examples of organic materials that can be used for the peeling layer 353 include polyimide resin and acrylic resin. resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzene resin Examples of the resin include cyclobutene resins and phenol resins.

[0226] Inorganic materials that can be used for the peeling layer 353 include tungsten, molybdenum, titanium, and the like. Tantalum, Niobium, Nickel, Cobalt, Zirconium, Zinc, Ruthenium, Rhodium a metal containing an element selected from the group consisting of ruthenium, palladium, osmium, iridium, and silicon; Examples of the silicon-containing layer include an alloy containing the element and a compound containing the element. The material may be amorphous, microcrystalline, or polycrystalline.

[0227] The formation substrate 351 may be peeled off by irradiating the peeling interface with a laser. , excimer lasers, solid-state lasers, etc. can be used. For example, diode-pumped solid A laser (DPSS) may be used, or a vertical pulling force may be applied. The preparation substrate 351 may be peeled off.

[0228] The display panel 15B is connected to an FPC 74 on the side opposite to the display surface (back side). For example, By using the display panel 15B, a multi-display as shown in FIG. 32 described later in the second embodiment can be realized. It can be made.

[0229] [Transistor configuration example] Next, a transistor that can be used in a display panel or a display device will be described. .

[0230] The structure of a transistor included in a display panel or a display device is not particularly limited. The transistors may be of a linear type, a staggered type, or an inverted staggered type. The transistor may be a top-gate or bottom-gate transistor. Either of these transistor structures may be used. Alternatively, gate electrodes may be provided above and below the channel. It may be possible.

[0231] 19A and 19B show examples of the configuration of transistors. Each transistor is formed by insulating layer 14. The insulating layer 141 is provided between the insulating layer 141 and the insulating layer 208. The insulating layer 141 functions as a base film. It is preferable that the insulating layer 208 functions as a planarization film.

[0232] The transistor 220 shown in FIG. 19A is a bottom transistor having a metal oxide in the semiconductor layer 204. The transistor has a metal gate structure. Metal oxides can function as oxide semiconductors. can.

[0233] It is preferable to use an oxide semiconductor as the semiconductor of the transistor. By using semiconductor materials with a wide band gap and low carrier density, This is preferable because it can reduce the current in the OFF state.

[0234] The transistor 220 includes a conductive layer 201, an insulating layer 202, a conductive layer 203a, and a conductive layer 203b. The insulating layer 202 and the semiconductor layer 204 are disposed on the insulating substrate 201. The conductive layer 201 functions as a gate. The semiconductor layer 204 is connected to the conductive layer 2 through the insulating layer 202. The conductive layer 203a and the conductive layer 203b are electrically connected to the semiconductor layer 204. The transistor 220 is covered by an insulating layer 211 and an insulating layer 212. It is preferable that the insulating layer 211 and the insulating layer 212 are formed using various inorganic insulating films. In particular, an oxide insulating film is suitable for the insulating layer 211, and a nitride insulating film is suitable for the insulating layer 212. A solid insulating film is preferred.

[0235] The transistor 230 shown in FIG. 19B is a top-gate transistor having polysilicon in the semiconductor layer. It is a gate-structure transistor.

[0236] The transistor 230 includes a conductive layer 201, an insulating layer 202, a conductive layer 203a, and a conductive layer 203b. , a semiconductor layer, and an insulating layer 213. The conductive layer 201 functions as a gate. The layer 202 functions as a gate insulating layer. The semiconductor layer further includes a pair of low resistance regions 214b. In FIG. 19B, the channel forming region 21 4a and the low resistance region 214b. The region 214a overlaps the conductive layer 201 through the insulating layer 202. The conductive layer 203a is an insulating Through an opening provided in the layer 202 and the insulating layer 213, one of the pair of low resistance regions 214b Similarly, the conductive layer 203b is electrically connected to the other of the pair of low resistance regions 214b. The insulating layer 213 can be made of various inorganic insulating films. The insulating layer 213 is preferably a nitride insulating film.

[0237] [Metal oxides] The semiconductor layer is preferably made of a metal oxide that functions as an oxide semiconductor. describes metal oxides that can be applied to the semiconductor layer.

[0238] The metal oxide preferably contains at least indium or zinc. In addition to these, aluminum, gallium, iridium, and zinc are preferably included. It is preferable that the metal contains tritium or tin. Also, boron, titanium, iron, niobium, etc. Nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, halide One selected from fluorine, tantalum, tungsten, magnesium, etc., or A plurality of types may be included.

[0239] Here, the metal oxide is an In-M-Zn oxide having indium, element M, and zinc. Here, the element M is aluminum, gallium, yttrium, or Other elements that can be used for element M include boron, titanium, iron, and nickel. Kel, Germanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium The elements M include nium, tantalum, tungsten, and magnesium. In some cases, a combination of the above elements may be acceptable.

[0240] In this specification, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met de). For example, zinc oxynitride (ZnON) may be used. Any nitrogen-containing metal oxide may be used for the semiconductor layer.

[0241] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAAC-OS (ca xis aligned crystalline oxide semiconductor tor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide de semiconductor), pseudo amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), and and other materials such as oxide semiconductors.

[0242] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure has distortion. The distortion is caused by the area where multiple nanocrystals are connected. In the region, between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement, Indicates the point where the direction is changing.

[0243] Nanocrystals are basically hexagonal, but are not limited to regular hexagons and may be non-regular hexagons. In addition, the distortion may have a lattice arrangement such as a pentagon or a heptagon. In the CAAC-OS, clear grain boundaries are not observed even in the vicinity of the strain. It is difficult to confirm the grain boundary due to the distortion of the lattice arrangement. This is because the CAAC-OS has a high lattice constant in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms changes due to the substitution of metal elements. This is because distortion can be tolerated by, for example, adjusting the distortion.

[0244] In addition, the CAAC-OS has a layer containing indium and oxygen (hereinafter, referred to as an In layer) and an element M The layered crystal structure ( It is also known as a layered structure. Indium and element M can be substituted for each other. When the element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer is Also, when indium in the In layer is replaced with element M, the (In,M) layer It can also be expressed as:

[0245] CAAC-OS is a metal oxide with high crystallinity. On the other hand, CAAC-OS has no clear crystallinity. Since it is difficult to confirm grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides decreases due to the inclusion of impurities and the generation of defects. Therefore, CAAC-OS is not suitable for impurities or defects (oxygen vacancies (V O :oxygen va It can also be said to be a metal oxide with low levels of . Metal oxides with OS have stable physical properties. Therefore, Metal oxides are heat resistant and highly reliable.

[0246] The nc-OS is a nano-sized area (e.g., an area of ​​1 nm to 10 nm, especially 1 nm to 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range. There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be considered to be a-like OS or amorphous oxide semiconductor. It may be indistinguishable from the above.

[0247] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is In the case of IGZO, the nanocrystals mentioned above provide a stable structure. In particular, IGZO tends to have difficulty growing crystals in the air, Small crystals (e.g., crystals of a few mm or cm) are more difficult to measure than large crystals (here, crystals of a few mm or cm). , the nanocrystals mentioned above) may be structurally more stable.

[0248] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has voids or low density areas. The e-OS has a lower crystallinity than the nc-OS and CAAC-OS.

[0249] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-lik e OS, nc-OS, and CAAC-OS may be present in two or more types.

[0250] The metal oxide film functioning as the semiconductor layer is heated with either an inert gas or an oxygen gas, or The metal oxide film can be formed by using both of the oxygen and the nitrogen. However, in order to obtain a transistor having a high field effect mobility, In this case, the flow rate ratio of oxygen (oxygen partial pressure) during the deposition of the metal oxide film is 0% or more and 3% or less. 0% or less is preferable, 5% or more and 30% or less is more preferable, and 7% or more and 15% or less is even more preferable. preferable.

[0251] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. More preferably, the energy is 3 eV or more, and even more preferably, the energy is 3 eV or more. By using metal oxides with a wide energy gap, the off-state current of transistors can be reduced. This can be done.

[0252] The metal oxide film can be formed by a sputtering method. A PECVD method, a thermal CVD method, an ALD method, a vacuum deposition method, or the like may also be used.

[0253] As described above, the display panel of the present embodiment has an auxiliary wiring connected to the common electrode of the light-emitting element. This suppresses uneven brightness of the display panel and improves the display quality. This improves the display quality of the panel. It also provides a highly reliable display with high brightness. It is possible to realize a display panel.

[0254] This embodiment mode can be combined with other embodiment modes and examples as appropriate. In the case where a plurality of configuration examples are shown in one embodiment in the specification, the configuration examples are selected. Any suitable combination is possible.

[0255] (Embodiment 2) In this embodiment, a display panel of one embodiment of the present invention will be described with reference to FIGS. Reveal.

[0256] FIG. 20A shows a block diagram of a pixel. The pixel of this embodiment mode has a switching transistor. Switching Tr, driving transistor, light emission In addition to the element (OLED), it has memory.

[0257] The memory is supplied with data DATA_W. In addition to the display data DATA, data D When ATA_W is supplied to the pixel, the current flowing through the light-emitting element increases, and the display panel can express high brightness.

[0258] The potential of data DATA_W is V w , the potential of the display data DATA is V data , memory capacity The amount is C w When expressed as above, the gate voltage of the driving transistor V g can be expressed by the formula (1). do.

[0259]

number

[0260] V w =V data Then, V g V data The greater the voltage applied, the greater the In other words, the current flowing through the light emitting element becomes larger, and the luminance becomes higher. become.

[0261] FIG. 20B shows a specific circuit diagram of a pixel.

[0262] The pixel shown in FIG. 20B includes a transistor M1, a transistor M2, a transistor M3, A transistor M4, a transistor M5, a capacitance element Cs, a capacitance element Cw, and a light-emitting element 12 Has 4.

[0263] Either the source or the drain of the transistor M1 is electrically connected to one electrode of the capacitance element Cw. The other electrode of the capacitance element Cw is connected to the source or drain of the transistor M4. One of the source and drain of the transistor M4 is electrically connected to the The gate of the transistor M2 is electrically connected to the gate of the capacitance element C The other electrode of the capacitance element Cs is electrically connected to one electrode of the transistor M2 The source or drain of the transistor M1 is electrically connected to the source or drain of the transistor M2. One of the drains is electrically connected to one of the source or drain of the transistor M5. The source or drain of the transistor M5 is connected to the source or drain of the transistor M3. is electrically connected to one of the drains of the transistor M5. The other electrode is electrically connected to one electrode of the light emitting element 124. The transistor has a backgate electrically connected to the gate, but the backgate connection is The present invention is not limited to this. In addition, the transistor does not necessarily need to have a back gate.

[0264] Here, the other electrode of the capacitance element Cw, one of the source and drain of the transistor M4, The node to which the gate of the transistor M2 and one electrode of the capacitance element Cs are connected is called a node NM. The other of the source or drain of the transistor M5 and the light emitting element 124 The node to which one of the electrodes is connected is designated as node NA.

[0265] The gate of the transistor M1 is electrically connected to the wiring G1. The gate of the transistor M4 is electrically connected to the wiring G2. The gate of the transistor M5 is electrically connected to the wiring G3. The other of the source and drain of the transistor M1 is electrically connected to the wiring DATA. The other of the source and drain of the transistor M3 is electrically connected to the wiring V0. The other of the source or the drain of the transistor M4 is electrically connected to the wiring DATA_W.

[0266] The other of the source and drain of the transistor M2 is electrically connected to the power supply line 127 (high potential). The other electrode of the light emitting element 124 is electrically connected to a common wiring 129. The common wiring 129 can be supplied with any potential.

[0267] The wirings G1, G2, and G3 function as signal lines to control the operation of the transistors. The wiring DATA functions as a signal line for supplying an image signal to the pixel. The wiring DATA_W is a wiring for writing data to the memory circuit MEM. The wiring DATA_W can function as a signal line for supplying a correction signal to the pixel. The wiring V0 can function as a signal line that supplies the electric current to the transistor M4. It also functions as a monitor line to obtain the characteristics. By supplying a specific potential to one electrode of the capacitance element Cs via M3, It can also stabilize writing.

[0268] The transistor M2, the transistor M4, and the capacitance element Cw constitute a memory circuit MEM. The node NM is a storage node, and by making the transistor M4 conductive, the wiring DATA A signal provided to _W can be written to node NM. By using a transistor with a low off-state current, the potential of the node NM can be held for a long time. can.

[0269] The transistor M4 is, for example, a transistor using a metal oxide in a channel formation region ( Hereinafter, an OS transistor) can be used. The current can be made extremely low, and the potential of the node NM can be maintained for a long period of time. In this case, it is preferable to use OS transistors for other transistors constituting the pixel. For specific examples of the metal oxide, refer to Embodiment 1.

[0270] Since the OS transistor has a large energy gap, it exhibits extremely low off-state current characteristics. In addition, OS transistors have the following problems: impact ionization, avalanche breakdown, and short-channel effect. The transistors that have silicon in the channel formation region (hereafter, Si transistors) are It has different characteristics from the conventional resistors, and can form highly reliable circuits.

[0271] In addition, a Si transistor may be used for the transistor M4. It is also preferable to use Si transistors for the other transistors to be used.

[0272] The Si transistors include transistors with amorphous silicon and crystalline silicon. A transistor having a junction (typically low-temperature polysilicon), a transistor having a single crystal silicon Transistors and the like.

[0273] Furthermore, one pixel may have both an OS transistor and a Si transistor. .

[0274] In the pixel, the signal written to the node NM is the image signal supplied from the wiring DATA. The transistor M1 is capacitively coupled to the pixel The transistor M5 can have a function of controlling the light emission of the light emitting element 124. The switch can function as a switch that controls the

[0275] For example, if a signal is written to node NM from wiring DATA_W, the threshold voltage of transistor M2 Voltage (V th ), transistor M2 will be turned on before the image signal is written. Therefore, the transistor M5 is provided to After the potential of the transistor M5 is determined, the transistor M5 is turned on to cause the light emitting element 124 to emit light. is preferred.

[0276] In other words, if a desired correction signal is stored in the node NM, the correction signal is applied to the supplied image signal. Note that the correction signal may be attenuated by elements on the transmission path. Therefore, it is preferable to generate the signal taking this attenuation into consideration.

[0277] Using the timing charts shown in FIGS. 21(A) and (B), the operation of the pixel shown in FIG. 20(B) The details of the operation will be described below. The correction signal (Vp) supplied to the wiring DATA_W can be either positive or negative. Any signal can be used, but the following description will be given with a positive signal. In the following description, high potential is represented by "H" and low potential is represented by "L".

[0278] First, the operation of writing the correction signal (Vp) to the node NM will be described with reference to FIG. This operation may be performed for each frame, and is performed at least once before supplying the image signal. Also, a refresh operation is performed as appropriate, and the same correction signal is rewritten to the node NM. You may do so.

[0279] At time T1, the potential of the wire G1 is set to "H", the potential of the wire G2 is set to "L", and the potential of the wire G3 is set to "L". When the potential of the wiring DATA is set to "L", the transistor M1 is turned on, and the capacitance element Cw and The potential of the other electrode becomes “L”.

[0280] This operation is a reset operation for performing a later capacitive coupling operation. The light emitting element 124 in the previous frame is emitting light, but the reset operation As a result, the potential of the node NM changes, and the current flowing through the light emitting element 124 changes. It is preferable to make the light emitting element 124 stop emitting light by making the light emitting element M5 non-conductive.

[0281] At time T2, the potential of the wire G1 is set to "H", the potential of the wire G2 is set to "H", and the potential of the wire G3 is set to "L". When the potential of the line DATA is set to "L", the transistor M4 is turned on and the line DATA_W The potential (correction signal (Vp)) is written to the node NM.

[0282] At time T3, the potential of the wire G1 is set to "H", the potential of the wire G2 is set to "L", and the potential of the wire G3 is set to "L". When the potential of the wiring DATA is set to “L”, the transistor M4 is turned off, and the node NM The compensation signal (Vp) is held at

[0283] At time T4, the potential of the wire G1 is set to "L", the potential of the wire G2 is set to "L", and the potential of the wire G3 is set to "L". When the potential of the wiring DATA is set to "L", the transistor M1 becomes non-conductive and the correction signal ( Vp) write operation is completed.

[0284] Next, referring to FIG. 21B, the image signal (Vs) is corrected and the light emitting element 124 is caused to emit light. The operation will be explained below.

[0285] At time T11, the potential of the wire G1 is set to “H”, the potential of the wire G2 is set to “L”, and the potential of the wire G3 is set to “L”. When the potential of the wiring DATA_W is set to “L”, the transistor M1 is turned on and the capacitance element C The potential of the wiring DATA is added to the potential of the node NM by the capacitive coupling of w. The node NM is the potential (Vs+Vp) where the correction signal (Vp) is added to the image signal (Vs). do.

[0286] At time T12, the potential of the wiring G1 is set to “L”, the potential of the wiring G2 is set to “L”, the potential of the wiring G3 is set to “L” When the potential of the wiring DATA_W is set to "L", the transistor M1 becomes non-conductive. The potential of the node NM is determined to be Vs+Vp.

[0287] At time T13, the potential of the wire G1 is set to “L”, the potential of the wire G2 is set to “L”, the potential of the wire G3 is set to “ When the potential of the wiring DATA_W is set to “H”, the transistor M5 is turned on and the node N The potential of A becomes Vs+Vp, and the light emitting element 124 emits light. The potential is Vs+Vp to the threshold voltage of transistor M2 (V th ) lower, Here, V th is set to a value that is small enough to be ignored.

[0288] The above is the operation of correcting the image signal (Vs) and the operation of making the light emitting element 124 emit light. The write operation of the correction signal (Vp) and the input operation of the image signal (Vs) are performed consecutively. However, it is better to write the correction signal (Vp) to all pixels first and then the image signal (Vs) In one embodiment of the present invention, the same image signal is input to a plurality of pixels at the same time. Since the correction signal (Vp) can be supplied to all pixels, the operation can be performed by first writing the correction signal (Vp) to all pixels. The speed can be improved.

[0289] As described above, the light emitting element is made to emit light using the image signal and the correction signal. This allows the current to be increased, resulting in high brightness. The power consumption of the source driver can be reduced because the voltage above can be applied as the gate voltage of the drive transistor. Power consumption can be reduced.

[0290] This embodiment mode can be appropriately combined with other embodiment modes and examples.

[0291] (Embodiment 3) In this embodiment, an electronic device of one embodiment of the present invention will be described with reference to FIGS.

[0292] An electronic device of this embodiment includes a display device according to one embodiment of the present invention in a display portion. By increasing the number of display panels, the display area of ​​the display device can be increased without limit. Therefore, the display device according to one embodiment of the present invention can be used for digital signage or other purposes. Suitable for use in PID (Public Information Display) and other applications. There can be.

[0293] The display unit of the electronic device of the present embodiment can display, for example, full high definition, 4K2K, 8K4K, It is possible to display images with a resolution of 16K8K or higher. The display screen size is 20 inches or more diagonally, 30 inches or more diagonally, or 50 inches diagonally or more, 60 inches diagonal or more, or 70 inches diagonal or more.

[0294] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Social computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples of such devices include audio playback devices, etc.

[0295] The electronic device of the present embodiment is mounted on the inner or outer wall of a house or building, or the interior of a car. It can be incorporated into the curved surface of the interior or exterior.

[0296] The electronic device of this embodiment may have an antenna. In this way, images and information can be displayed on the display unit. When a secondary battery is included, the antenna may be used for contactless power transmission.

[0297] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays) It may be possible.

[0298] The electronic device of the present embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, and running various software (programs) function, wireless communication function, and function for reading out programs or data recorded on a recording medium etc.

[0299] FIG. 22A shows an example of a television device. A television device 7100 includes a housing 71. A display unit 7000 is built into the housing 71. This shows a configuration that supports 01.

[0300] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0301] The television device 7100 shown in FIG. 22A is operated using an operation switch provided in a housing 7101. This can be done by a touch panel or a separate remote control 7111. The display unit 7000 may be provided with a touch sensor, and the television The remote control device 7111 may operate the remote control device 7100. The remote control 7111 may have a display unit for displaying information output from the remote control 7111. The channel and volume can be controlled using the operation keys or touch panel. , the image displayed on the display unit 7000 can be manipulated.

[0302] The television device 7100 includes a receiver and a modem. It is also possible to receive general television broadcasts via wired or wireless connection via a modem. By connecting to a wired communication network, it can be one-way (sender to receiver) or two-way It is also possible to communicate information in both directions (between sender and receiver, or between receivers). do.

[0303] FIG. 22B shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and a 213, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. It is being read.

[0304] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0305] 22(C) and (D) show an example of digital signage.

[0306] A digital signage 7300 shown in FIG. 22C includes a housing 7301, a display unit 7000, and and a speaker 7303. In addition, LED lamps, operation keys (power switch, may have a control switch, connection terminals, various sensors, a microphone, etc. do.

[0307] FIG. 22(D) shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 is a display unit 7000 provided along the curved surface of a pillar 7401. has.

[0308] In FIG. 22C and FIG. 22D, the display device of one embodiment of the present invention is applied to the display portion 7000. It is possible.

[0309] The larger the display unit 7000, the more information can be displayed at one time. The wider the area, the more visible it is, and the more effective your advertising will be. Cut.

[0310] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is also preferable because it not only shows the route information but also allows the user to operate it intuitively. When used to provide information such as traffic information, the device must be intuitively operated. Usability can be improved.

[0311] Also, as shown in FIG. 22(C) and (D), the digital signage 7300 or the digital The signage 7400 is an information terminal device 7311 such as a smartphone carried by a user or It is preferable that the display unit 7411 can be connected to the information terminal 7411 by wireless communication. The advertisement information displayed on 000 is displayed on the screen of the information terminal 7311 or the information terminal 7411. In addition, the information terminal 7311 or the information terminal 7411 can be operated. In this way, the display on the display unit 7000 can be switched.

[0312] In addition, the digital signage 7300 or the digital signage 7400 is provided with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and enjoy it. It is possible.

[0313] This embodiment mode can be appropriately combined with other embodiment modes and examples. EXAMPLES

[0314] In this example, the configuration of the auxiliary wiring was examined, and the results of actually fabricating a display panel were He explains.

[0315] [Example of auxiliary wiring 1] First, the pixel 130a shown in FIG. 1A and the pixel 130b shown in FIG. Based on the results of the study, we actually fabricated a display panel. Then, a cross section of the connection portion 122 of the display panel was observed.

[0316] First, the connection part 122 was examined, and it was found that the pixel size is 225 μm (13 inches, h hgh definition (HD), the distance between the edge of the metal mask opening and the edge of the pixel opening, The distance between the metal mask opening edge and the center of the connection part 122 is designed to be 20 μm. In this case, the aperture ratio of the pixel 130a was estimated to be 41.1%. In this case, the aperture ratio is estimated to be about 30%, and the common layer is formed in two steps. It was found that the aperture ratio could be significantly improved by

[0317] Next, the STEM (Scanning TEM) of the connection portion 122 in the actually manufactured display panel was The Transmission Electron Microscope photograph is shown in Figure 23. As shown in FIG. 23, the common electrode 113 is connected to the auxiliary wiring 120 at the connection portion 122. I was able to connect.

[0318] [Example of auxiliary wiring 2] In addition, a common layer provided in common to sub-pixels of multiple colors is formed over the entire display area of ​​the display panel. We investigated a method to electrically connect the auxiliary wiring and the common electrode even if the A display panel was fabricated, and an evaluation was performed to see whether the auxiliary wiring and the common electrode were electrically connected. A specific method will be described with reference to FIG.

[0319] First, as shown in FIG. 24(A), a reflective electrode 125a and a transparent electrode 125b are formed on an insulating layer 101. Next, as shown in FIG. 24(B), only the transparent electrode 125b is formed. Then, the pixel electrode 111b and the auxiliary wiring 120b are formed. In this manner, the reflective electrode 125a is processed, and the pixel electrode 111a and the auxiliary wiring 120a are formed. At this time, the end of the auxiliary wiring 120a is arranged so as to be located inside the end of the auxiliary wiring 120b. The etching time was adjusted to form a canopy-shaped auxiliary wiring. We used wet etching, which allows for chipping. Figure 25(A) shows the actual fabricated eaves-shaped 25A shows a STEM image of the auxiliary wiring 120a. It can be seen that an auxiliary wiring having an eaves shape, which is located inside the end of the auxiliary wiring 120b, has been formed. I did.

[0320] After that, the insulating layer 104 was formed (FIG. 24(D)). and covers the ends of the pixel electrode 111b and the auxiliary wiring 120a and the auxiliary wiring 120b. As shown in FIG. 24(E), the auxiliary wiring is formed in a canopy shape. The EL layer 112 was formed so that the EL layer 112 was broken into two parts by lines. As shown in FIG. 1E, the side of the auxiliary wiring 120b is connected to the common electrode 113. In fact, after the EL layer 112 and the common electrode 113 were formed, the resistance was measured. As a result of the measurement, it was confirmed that the auxiliary wiring and the common electrode 113 were electrically connected. Ta.

[0321] FIG. 25(B) shows a STEM image of the eaves-shaped auxiliary wiring that was actually fabricated. The sample shown in FIG. 25(B) is different from that shown in FIG. 25(A). The auxiliary wirings 120a and 120b are collectively referred to as 120. As shown in FIG. 112 is cut, and the auxiliary wiring 120 and the common electrode 113 are connected to each other. It was confirmed that:

[0322] [Auxiliary wiring example 3] In addition, we investigated a configuration in which auxiliary wiring is provided on the opposing substrate side, and actually fabricated a display panel and tested the auxiliary wiring. The cross-section of the connection between the wire and the common electrode was observed. The specific method is explained using Figure 26. do.

[0323] As shown in FIG. 26(A), the insulating layer 104 is provided on the insulating layer 101 side. In this way, the spacer 108 and the auxiliary wiring 106 are formed on the opposing substrate 121 side. A spacer 107 was formed on the layer 104. That is, the spacer 107, the spacer 108, and The auxiliary wiring 106 was formed so as to be disposed between the two sub-pixels. The opposing substrate 121 and the common electrode 113 are connected to each other by using an adhesive layer 103 so that the opposing substrate 121 and the common electrode 113 are in contact with each other. The insulating layer 101 was attached.

[0324] 26B shows a top view of the display panel. The display panel includes a pixel portion 71, which transmits visible light, and a display region 72. The pixel portion 71 has a region 72 that blocks visible light and a region 73 (a wiring) that blocks visible light. As shown in Fig. 27(A) to (C), in each of the locations, Even if the auxiliary wiring 106 and the common electrode 113 are in contact with each other, it can be confirmed that the auxiliary wiring 106 and the common electrode 113 are in contact with each other. EXAMPLES

[0325] In this example, the results of manufacturing a display device according to one embodiment of the present invention will be described.

[0326] [Display panel preservation test] Flexible displays are prone to deformation due to changes in temperature and humidity. Therefore, as shown in Fig. 28(A) and (B), a flexible display is The display panel 190 was attached to a support 195 and a storage test was carried out.

[0327] The display panel 190 has two sides that transmit visible light, similar to the display panel DP shown in FIG. At least a part of the visible light transmitting region 72 is connected to another display panel. Because it is overlapped, it does not overlap with the support 195 .

[0328] As shown in FIG. 28(A), in the comparative sample (Ref), the support 195 has four peripheral edges. The display panel 190 was fixed to the support 195 by attaching the display panel 190 thereto. As shown in FIG. 28(B), in the sample, the support 195 is entirely covered with the mark. The display panel 190 was fixed to the support 195 by attaching the panel 190. 195 is the coefficient of thermal expansion (CTE:Coefficient of Thermal Expansion An aluminum plate with a thermal expansion coefficient of 24 ppm / ℃ was used.

[0329] In the storage test, the sample and the comparison sample were stored at 30°C for 12 hours, and then at 0°C for another 12 hours. Saved for a while.

[0330] FIG. 28(C) shows the comparative sample (Ref) before the storage test, and FIG. 28(D) shows the comparative sample (Ref) before the storage test. Fig. 28(E) shows the comparative sample (Ref) after the storage test. FIG. 28(F) shows the sample after the storage test.

[0331] As shown in Figure 28(E), wrinkles were observed on the display surface of the comparative sample (Ref) after the storage test. On the other hand, as shown in Figures 28(D) and (F), the sample (Sample) had a low porosity after the storage test. No difference was observed before and after.

[0332] For this reason, by attaching the display panel 190 to the entire surface of the support 195, It was found that it was possible to suppress changes in the shape of the sible display.

[0333] In addition, a display panel was attached to the entire surface of a support having a different CTE from the above sample, and the same test was performed as above. When an acrylic plate with a CTE of 70 ppm / ℃ was used, the support 19 Even if the display panel 190 was attached to the entire surface of the display device 5, wrinkles were generated on the display surface. Even if it is the same resin plate, the CTE of glass fiber reinforced plastic (GF) is 60 ppm / ℃. When the RP plate was used, wrinkles on the display surface were suppressed.

[0334] From the above, it is possible to attach a flexible display to the entire surface of a substrate with a small CTE. It was found that by using a thin film, deformation of the flexible display can be further suppressed.

[0335] In addition, the film used in the flexible display absorbs water, which can cause the flexible display to The shape of the display may change. 0 has a portion that does not overlap with the support 195, and the portion expands due to water absorption compared to other portions. Therefore, it was found that the film had a low water absorption rate and wrinkles were easily formed. It has been found that it is preferable to use

[0336] [How to attach the display panel] When arranging multiple display panels side by side, alignment is required to fine-tune the positions of the multiple display panels. On the other hand, the use of an alignment mechanism requires space. This would require a larger display area, which would lead to larger displays and electronic devices. The display unit is designed so that multiple display panels can be positioned at desired positions without using an alignment mechanism. A jig was created to attach the panel to the support with high precision.

[0337] Using Figs. 29(A) to (D), the display panel 190 is attached to the support 195 with high accuracy. The method and tool will be described.

[0338] The jig shown in FIG. 29(A) has a plurality of panel holders 416. The switch 417 is turned on to allow the display panel 1 to be attached to the display panel 1. The panel holder 416 can hold the display panel 190 by vacuum suction. In this way, by using the panel holder 416, the The side of the display panel 190 that does not overlap with the support 195 (the long side in this embodiment) can be fixed. Cut.

[0339] First, the separator film of the double-sided tape is peeled off from the side that is to be attached to the support 195, and the support The double-sided tape was attached to the entire surface of the body 195. The photoresist film was left on the surface of the film, and the photoresist was removed. The taped support 195 was placed in a predetermined position in the fixture.

[0340] Next, as shown in FIG. 29(B), the display panel 190 was placed on the support 195. 29(B) along the dotted line. The display panel 190 is then placed on the display panel 417. Then, the display panel 190 was pressed down from above using the panel holder 416.

[0341] Next, as shown in FIG. 29(C1) and (C2), the display panel 190 is lifted up and the sensor is While peeling off the parametric film, the side on which the display panel 190 is fixed (the panel holder 41 The display panel 190 was gradually attached to the support 195 from the side 6. The separator film can be peeled off from the side where the display panel 190 is fixed by the adhesive 416. This is an important point in order to attach the display panel 190 to the support 195 with high precision.

[0342] In FIG. 29(D), the display panel 190 is attached to the support 195 and is removed from the jig. The figure shows the state after it was removed. The deviation in the θ direction was calculated to be less than about 0.02°. It was confirmed that the degree of the difference was small. By using the jig, the display panel was attached to the support 195 with high precision. 29(E) shows the structure of the substrate 190 attached to the support 195. 29(E) shows a state in which the display panel 190 is displayed with an image. It is confirmed that the display panel 190 after being attached to the support 195 displays an image normally. I was able to acknowledge it.

[0343] [Display device] Next, the support and the display panel that have been bonded together with high accuracy and with suppressed deformation are subjected to 4( Using a 2x2 set, two types of display devices were fabricated.

[0344] The first is a multi-display in which the display panel and the driving circuit are modularized. Fig. 31(A) shows the display result, and Fig. 3 A side view photograph is shown in 1(B).

[0345] As shown in FIG. 30, the display panel 190 is provided on one side of a support 195 (aluminum plate). The display panel is attached by the method of attaching the display panel described with reference to FIG. The panel 190 was attached to a support 195. The support 195 had a curved surface with a radius of curvature R = 5 mm. The display panel 190 is bent along the curved surface. 195, which overlaps with the adjacent display panel 190. A driving circuit 372 is fixed to the other surface of the support 195. The circuit 372 is electrically connected by an FPC 374. The 190 panels are bonded together with high precision, eliminating the need for an alignment mechanism. Simply attach the 190 to the designed frame to get a seamless image. The combined thickness of the support 195 and the display panel 190 (thickness T in FIG. 30) is 35 mm or less. It was.

[0346] The optical member 240 includes, from the display panel 190 side, a support member 292, a circular polarizer 295, and a reflector 296. The support member 292 is an acrylic plate. The plate 295 has a linear polarizing plate 295a on the viewer side and a 1 / 4 λ plate on the display panel 190 side. The anti-reflection member 296 is an anti-reflection film (AR (Anti -Reflection film) was used.

[0347] Furthermore, a touch sensor may be incorporated in the display panel 190 or the optical member 240. A touch panel may be attached to the lens 190 or the optical member 240 to form a multi-display. It is also possible to provide a touch panel function.

[0348] As shown in FIG. 31(A), the seams of the multi-display we created are hardly visible. A natural image was obtained.

[0349] The second is a multi-display in which the driving circuit is separated from the display panel. The configurations of the three types of display panels will be described with reference to FIG. 32 and FIG.

[0350] FIG. 32 is a rear view of the multi-display. In the multi-display shown in FIG. On the rear surface of each of the display panels 190a to 190d, one end of the FPC 374s and one end of the FPC 37 17(A) and (B), one end of the display panel 15B is connected to the By exposing the conductive layer on the rear surface of the display panel, the FPC can be connected to the rear surface of the display panel. It is possible.

[0351] Furthermore, the other end of the FPC374s is connected to one end of the long FPC374a. The other end of 374g is connected to one end of the long FPC 374b, and the other end of FPC 374a The other end of the FPC 374b is connected to a drive circuit (one of the drive circuits 372a to 372d). In this way, by using a long FPC to route the power and signal lines, There is only an FPC on the back of the display panel, making the most of the thin and lightweight display panel. For example, it is suitable as a wall-mounted display.

[0352] Also, Fig. 33(A) to (E) show display panels with different configurations. Fig. 33(A) and (C) show 33(B) and (D) are bottom views of the display panel, and FIG. 33(C) is a top view of the display panel. FIG. 3E) is a side view of a display device using the display panel shown in FIG. 33(C) and (D). When connecting an FPC to the display surface side of a display panel 15C as shown in 3(A) and 3(B), Alternatively, the FPC may be bent toward the rear surface of the display panel 15C. As shown in the figure, the FPC is connected to the display surface side of the display panel 15D, and the back of the display panel 15D itself is The FPC connection part of the display panel and the IC connection part may be bent toward the back side. By bending the display panel to the side, the non-display area can be reduced, enabling a narrow-frame display. In this way, even if the FPC is connected to the display surface side of the display panel, By using FPC to route the power lines and signal lines, the FPC can be mounted on the back of the display panel. This makes it possible to create a display that takes advantage of the characteristics of a thin and lightweight display panel. The bending angle of the FPC and the display panel is not limited to 180°.

[0353] The specifications of the display panel are shown in Table 1. The pixel configuration of the display panel is pixel 13 shown in FIG. The display panel is the same as that of Example 0a, and the common layer of the EL layer is formed in two separate steps. The auxiliary wiring 120 is electrically connected to the common electrode of the light-emitting element. It is the same as the connection portion 122 shown in FIGS. 1(A) and 1(B), and is provided in the same layer as the pixel electrode 111. The auxiliary wiring 120 is electrically connected to the common electrode 113. The panel has pixels as shown in FIG.

[0354] [Table 1]

[0355] Using four (2 x 2) of these display panels, a 26-inch WQHD multi-display is created. The FPC was connected to the display surface side of the display panel. The aluminum plate used was 1 mm thick. The support had a curved surface with a radius of curvature R = 3 mm. By bending the panel along the curved surface, as shown in Figs. 33(C) to (E), The FPC connection and IC connection were bent to the back side of the display panel. The support was sandwiched between a pair of acrylic plates. The acrylic plate on the display side (support material 292) had a circular polarizer. A light plate 295 and an AR film (anti-reflection member 296) are placed (Optical member in FIG. 33(E) (See 240.) Figures 34(A) and (C) show the display results, and Figure 34(B) shows a side view. As shown in Figure 34(B), the thickness T of the support and the display panel (see Figure 33(E)) is The thickness of the first multi-display (see Figure 31) is approximately 13 mm, making it thinner than the first multi-display (see Figure 31). As shown in Figures 34(A) and (C), the seams of the multi-display are not visible. Well, we were able to get a natural image.

[0356] The luminance was measured when one display panel was used and 4% of the display area was illuminated. The results are shown in FIG. 20(B). The measurement was performed through a circular polarizing plate. The brightness of the display using only the data is 918cd / m 2 However, the display data DATA The luminance of the display with data DATA_W added is 3149cd / m 2 This was. Therefore, by combining the display data DATA with the data DATA_W, a high brightness display can be achieved. I realized it could be achieved. EXAMPLES

[0357] In this example, a pixel of a display panel according to one embodiment of the present invention and a pixel of a display panel according to a comparative example are The results of estimating the aperture ratio for each of these will be described.

[0358] In this embodiment, a pixel 130 shown in FIG. 4A is used as a pixel of a display panel according to one embodiment of the present invention. As the pixel of the display panel for the comparative example, pixel 130 shown in FIG. 9(A) was used.

[0359] In this embodiment, the screen size is 13 inches diagonally, the number of pixels is 1280 (H) × 720 (V), The pixel aperture ratio was estimated under the conditions of HD resolution and pixel size of 225 μm. In this embodiment, the minimum distance (margin) between the metal mask and the sub-pixel is 10 μm and 15 μm. The aperture ratio of the pixel was calculated for each of the thicknesses of 10 μm, 20 μm, and 20 μm.

[0360] Figure 35 shows the estimated aperture ratio of the pixel. The horizontal axis in Figure 35 is the ratio of the pixel aperture ratio to the metal mask. The vertical axis indicates the minimum distance (margin) between the sub-pixels, and the vertical axis indicates the aperture ratio of the pixel. In the display panel of this embodiment, the common layer included in the EL layer is formed in two separate steps. On the other hand, the display panel of the comparative example has a Since the common layer is formed in one step, this method is referred to as the "One-step method" in FIG. .

[0361] The pixel aperture ratio of the display panel of the comparative example was estimated to be about 23% to about 52%. The pixel aperture ratio of the display panel according to one embodiment of the invention is estimated to be about 40% to about 65%. For this reason, the pixel of the display panel of one embodiment of the present invention is superior to the pixel of the display panel of the comparative example. It was estimated that the pixel aperture ratio could be increased by approximately 15%.

[0362] From the results of this example, it was found that the common layer included in the EL layer was formed in two separate steps. It was confirmed that the aperture ratio of the pixel could be increased compared to when it was formed in one step. EXAMPLES

[0363] In this embodiment, the results of manufacturing a display device having a flexible display panel will be described. The display device of this embodiment can be folded in half so that the display surface faces inward. .

[0364] 36A shows a perspective view of the display device. The display device of this embodiment includes a support 401a, a support A support 401b, a display panel 402, a support 403a, a support 403b, a gear 404a, and teeth The vehicle 404b has a housing 405.

[0365] The support 401a and the support 401b are disposed on the rear surface of the display panel 402 (the surface opposite to the display surface). ) side.

[0366] The display panel 402 is divided into a portion fixed to the support 401a and a portion fixed to the support 401b. For example, adhesives (including adhesive tapes, etc.) and suction films The display panel 402 can be fixed to the support by using a fixing member or the like.

[0367] The display panel 402 has organic EL elements as light-emitting elements, and a transistor for driving the light-emitting elements. The display panel 402 includes a transistor having a metal oxide in a semiconductor layer. It is flexible.

[0368] The support 403a and the support 403b are arranged so as not to overlap with the display area of ​​the display panel 402. The support 403 is located on the display surface side of the display panel 402 (so as to overlap the non-display area). a is made up of three parts, each of which is screwed to the support 401a. The support 403b consists of three parts, each of which is screwed to the support 401b. The support members 403a and 403b are not limited to the configuration shown in FIG. It can be composed of the above parts.

[0369] The non-display area of ​​the display panel 402 is the area located between the support 401a and the support 403a. and a region located between support 401b and support 403b.

[0370] The housing 405 can house an FPC, an IC, a battery, and the like.

[0371] FIG. 36B shows an exploded view of the display device of this embodiment. In FIG. 36B, the support 403 a, the support 403b and the like are omitted.

[0372] The support 401a is connected to the gear 404a, and the support 401b is connected to the gear 404b. Since the gear 404a and the gear 404b are meshed with each other, the support 401a and the support 401b are The movement of 1b is synchronized, and the shape of the display device changes (from the unfolded state to the folded state, etc.). Therefore, when the display panel 402 is bent with a predetermined radius of curvature, The display panel 402 is prevented from being bent with a radius of curvature smaller than a predetermined radius of curvature. Therefore, when the display device is folded, an unexpectedly large force is applied to the display panel 402. Accordingly, damage to the display panel 402 can be suppressed.

[0373] When the display device is in an unfolded state, the support 401a and the support 401b are in contact with each other. Therefore, the entire display panel 402 can be supported, and the impact resistance and tensile strength of the display panel 402 are excellent. The scratch hardness can be increased.

[0374] The support when the display device is in the middle of changing from the unfolded state to the folded state. Since the support 401a and the support 401b are separated from each other, the display panel 402 is There is an area that is not in contact with either the support 401 or the support 401b. Since there is no support from the support 401a and the support 401b, the impact strength and scratch hardness may decrease. do.

[0375] Therefore, in order to increase the impact resistance and scratch resistance of the display panel 402, It is preferable to provide an impact absorbing layer on one or both sides of the impact absorbing layer. Examples of the material include silicone, urethane, and acrylic. The impact mitigation layer is made of rubber. The impact absorbing layer may be in the form of a gel. A display device with a silicone sheet only on the display surface, and a display panel with urethane on both sides A display device having the sheet disposed thereon was fabricated.

[0376] 37(A) to (D) show photographs of the display device of this example. The display device has urethane sheets with a thickness of about 0.22 mm on both sides of the display panel 402. 37(C) and (D), the display panel 402 has a display surface with a thickness of about 0. The display has a silicone sheet of .5 mm. Both displays have good display quality and are highly durable. was confirmed. [Explanation of symbols]

[0377] DP display panel 10A Display Panel 15A Display Panel 15B Display panel 15C Display Panel 15D Display Panel 20A light emitting element 20B Light emitting element 21A Light emitting element 71 Pixel section 71a Pixel section 71b Pixel section 71c Pixel section 71d Pixel section 72 areas 72b area 72c area 72d area 73 areas 74 FPC 74a FPC 78 Drive circuit 79 Display area 101 Insulating layer 102 Translucent layer 103 Adhesive layer 104 Insulating layer 105 Space 106 Auxiliary wiring 107 Spacer 108 Spacer 109 Protective layer 110B Light emitting element 110G Light emitting element 110R Light emitting element 111 Pixel electrode 111a Pixel electrode 111b Pixel electrode 112 EL layer 112a EL layer 112b EL layer 113 Common electrode 120 Auxiliary wiring 120a Auxiliary wiring 120b Auxiliary wiring 121 Opposing substrate 122 Connection 124 Light emitting element 125a reflective electrode 125b transparent electrode 128 Conductive Layer 128a Conductive layer 128b Conductive layer 130 pixels 130a pixels 130b pixels 130c pixels 130d pixels 131 Conductive Film 141 Insulating layer 150 Mask 155 Mask 161 Common layer 161a common layer 161b Common layer 163 Light-emitting layer 163A Light-emitting layer 163B Light-emitting layer 163B_1 Blue hole transport layer 163B_2 Blue light-emitting layer 163G Light-emitting layer 163G_1 Green hole transport layer 163G_2 Green light-emitting layer 163R Light-emitting layer 163R_1 Red hole transport layer 163R_2 Red light emitting layer 165 Common layer 165a common layer 165b Common layer 170 areas 171 areas 172 areas 190 Display Panel 190a Display panel 190d Display Panel 195 Support 201 Conductive layer 202 Insulating layer 203a Conductive layer 203b Conductive layer 204 Semiconductor layer 208 Insulating layer 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214a Channel formation region 214b Low resistance region 214c LDD area 220 Transistor 230 Transistor 240 Optical Components 292 Support material 295 Circular Polarizer 295a Linear polarizer 295b λ plate 296 Anti-reflective materials 301 Transistor 303 Transistor 306 Connection 307 Conductive Layer 308 Conductive Layer 309 Conductive Layer 311 Gate insulation layer 312 Insulating layer 313 Insulating Layer 314 Insulating layer 314a Insulating layer 314b Insulating layer 314c Insulating layer 315 Insulating Layer 317 Adhesive layer 318 Adhesive layer 319 Connectors 351 Preparation Board 353 Peeling layer 353a Peeling layer 353b Peeling layer 361 Substrate 363 Adhesive layer 365 Insulation Layer 367 Insulating Layer 371 Substrate 372 Drive circuit 372a Drive circuit 373 Adhesive layer 374 FPC 374a FPC 374b FPC 374g FPC 374s FPC 375 Protective layer 401a Support 401b Support 402 Display Panel 403a Support 403b Support 404a Gears 404b Gears 405 Case 415 Adjuster 416 Panel Holder 417 Switch

Claims

[Claim 1] a first pixel electrode, a second pixel electrode, a third pixel electrode, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a first common layer, a second common layer, a common electrode, and an auxiliary wiring; the first light-emitting layer is located on the first pixel electrode; the second light-emitting layer is located on the second pixel electrode; the third light-emitting layer is located on the third pixel electrode; the first light-emitting layer has a function of emitting light of a color different from that of the second light-emitting layer, the first light-emitting layer has a function of emitting light of the same color as the third light-emitting layer; the first common layer is located on the first pixel electrode and the second pixel electrode; the first common layer has a portion overlapping with the first light-emitting layer and a portion overlapping with the second light-emitting layer, the second common layer is located on the third pixel electrode; the second common layer has a portion overlapping with the third light-emitting layer, a portion overlapping with the first pixel electrode via the first common layer and the first light-emitting layer, a portion overlapping with the second pixel electrode via the first common layer and the second light-emitting layer, a portion overlapping with the third pixel electrode via the second common layer and the third light-emitting layer, and a portion in contact with an upper surface of the auxiliary wiring.

Images