Ceramic wafer having surface profile and method for manufacturing the same

Abstract

To provide a ceramic wafer having a surface profile and to provide a method for manufacturing the same.SOLUTION: This invention provides a ceramic wafer having a surface profile and a method for manufacturing the same, wherein the ceramic wafer has an upper surface and a lower surface, and at least one of the upper surface and the lower surface has an irregular surface profile. A total thickness variation (TTV) value between the top surface and the bottom surface is in the range of 0.1 to 100 μm. The ceramic wafer having the surface profile of the present invention not only contributes to coating by controlling the thickness variation over the entire surface of the wafer, but also facilitates fluid flow, thereby improving bonding strength of the coating and reducing surface defects in the subsequent manufacturing process.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to ceramic wafers, and more particularly to ceramic wafers having a topographical surface. [Background technology]

[0002] A typical wafer manufacturing process involves grinding the resulting wafer to flatten the surface of the wafer so that the thickness of the wafer is uniform across the entire surface, and then polishing to remove any irregularities on the wafer surface caused by grinding, resulting in a flat wafer.

[0003] The purpose of grinding is to lap the wafer and control the thickness within the tolerance range, while the purpose of polishing is to improve the flatness, smoothness and planarity of the wafer surface while improving the defects caused by grinding, and to make the wafer surface smooth so that particles are less likely to adhere. This is because most of the causes of wafer defects are particles, crystal-induced pits, residues or scratches. Therefore, the grinding and polishing process determines the final thickness and surface roughness of the wafer, and also affects the final finish of the wafer. If the wafer is too thick, poor heat dissipation occurs, and if it is too thin, it is prone to breakage. Summary of the Invention [Problem to be solved by the invention]

[0004] As can be seen from the above, in general wafer manufacturing processes, the surface of the wafer must be planarized. However, the present inventors have discovered that in semiconductor manufacturing processes, when many fluids (liquids or gases) pass over the surface of a wafer with uneven thickness, i.e., a ceramic wafer having a surface topography, this helps the fluid flow and helps improve the yield of thin films.

[0005] The present invention provides a ceramic wafer having a surface topography that is conducive to subsequent coating processes and ceramic bond strength. [Means for solving the problem]

[0006] An object of the present invention is to provide a ceramic wafer having an upper surface and a lower surface, at least one of the upper surface and the lower surface having an irregular surface shape, and a total thickness variation (TTV) value between the upper surface and the lower surface is in the range of 0.1 to 100 μm.

[0007] According to one embodiment of the present invention, the thickness variation value of the entire surface is in the range of 0.1 to 10 μm.

[0008] According to one embodiment of the present invention, the surface shape is convex on the front and flat on the back, concave on the front and flat on the back, irregular on the front and flat on the back, convex on the front and convex on the back, concave on the front and convex on the back, irregular on the front and convex on the back, convex on the front and concave on the back, concave on the front and concave on the back, irregular on the front and concave on the back, convex on the front and irregular on the back, concave on the front and irregular on the back, or irregular on the front and regular on the back.

[0009] According to an embodiment of the present invention, the material of the ceramic wafer is aluminum nitride, silicon nitride, alumina, silicon oxide, silicon carbide nitride, oxide or carbide.

[0010] Another object of the present invention is to provide a method for producing a ceramic wafer having a surface profile, comprising the steps of (1) preparing a ceramic sheet by subjecting a ceramic green body to high temperature treatment, or (2) preparing a ceramic wafer to be regenerated having a thin film or circuit on a surface thereof, and placing the ceramic sheet or the ceramic wafer to be regenerated on a mounting plate and subjecting the upper and lower surfaces of the ceramic sheet to processing including grinding, polishing, etching, plasma or mechanical processing to form a ceramic wafer having the surface profile.

[0011] According to one embodiment of the present invention, the grinding is single-sided grinding, and the surface of the ceramic wafer is ground with a grinding wheel by adjusting the angle of the mounting disk, or the angle of the grinding wheel or grinding disk is adjusted, or the angular shape of the grinding wheel is controlled to grind the surface of the ceramic wafer.

[0012] According to one embodiment of the present invention, the grinding is double-sided grinding, and the shape of a grinding disk is adjusted to grind the surface of the ceramic wafer.

[0013] According to one embodiment of the present invention, the polishing is single-sided polishing, and the angle or shape of a polishing disk is adjusted to polish the surface of the ceramic wafer.

[0014] According to one embodiment of the present invention, the polishing is double-sided polishing, and the angle or shape of the polishing disk is adjusted to polish the surface of the ceramic wafer.

[0015] According to an embodiment of the present invention, the etching method is dry etching or wet etching. Effect of the Invention

[0016] An advantage provided by the present invention is that wafers having the surface features of the present invention can contribute to the coating process and improve thin film yield during subsequent processing by aiding in the flow of fluid as it passes over a surface of uneven thickness.

[0017] The practice of the present technique will now be described, by way of example only, with reference to the drawings in which: [Brief description of the drawings]

[0018] [Figure 1] 1A-1D are schematic diagrams of ceramic wafers having different surface topography according to one embodiment of the present invention. [Diagram 2] 1 is a schematic diagram of a single-sided grinding method according to an embodiment of the present invention. [Diagram 3] 1 is a schematic diagram of a double-side grinding method according to an embodiment of the present invention. [Figure 4] 1 is a schematic diagram of a single-sided polishing method according to an embodiment of the present invention. [Diagram 5] 1 is a schematic diagram of a double-side polishing method according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] It should be understood that aspects of the present invention are not limited to the arrangements, instrumentalities and features shown in the drawings.

[0020] According to common practice, the various features and components in the drawings are not drawn to scale, but are drawn in a manner best suited to present the specific features and components relevant to the present invention, and the same or similar reference numerals are used to represent similar components and elements in different drawings.

[0021] The following embodiments should not be considered as excessively limiting the present invention. Those skilled in the art may modify and change the embodiments discussed in this specification without departing from the spirit or scope of the present invention, and such modifications and changes are also included in the scope of the present invention.

[0022] The terms "a" and "an" are used herein to refer to one or to more than one (i.e., at least one) of the components herein.

[0023] The ceramic wafer having a surface shape provided by the present invention has an upper surface and a lower surface, and at least one of the upper surface and the lower surface has an irregular surface shape, and the total thickness variation (TTV) value between the upper surface and the lower surface is in the range of 0.1 to 100 μm, for example, in the range of 0.2 μm to 100 μm, 0.5 μm to 100 μm, 1.5 μm to 100 μm, 3.5 μm to 100 μm, 5.5 μm to 100 μm, 9.5 μm to 100 μm, 15 μm to 100 μm, 35 μm to 100 μm, 55 μm to 100 μm, 0.2 μm to 50 μm, 0.2 μm to 60 μm, 0.1 μm to 80 μm, 0. The range may be, but is not limited to, 1 μm to 90 μm, 0.1 μm to 55 μm, 0.1 μm to 30 μm, 0.1 μm to 20 μm, 0.1 μm to 15 μm, 0.1 μm to 10 μm, 0.2 μm to 15 μm, 0.2 μm to 25 μm, 0.2 μm to 40 μm, 0.1 μm to 1 μm, 0.1 μm to 0.8 μm, 0.1 μm to 0.6 μm, 0.1 μm to 0.4 μm, or 0.1 μm to 0.2 μm. In a preferred embodiment, the value of the variation in thickness over the entire surface is in the range of 0.1 to 10 μm, for example, in the range of 0.2 μm to 10 μm, 0.5 μm to 10 μm, 0.8 μm to 10 μm, 1 μm to 10 μm, 3 μm to 10 μm, 5 μm to 10 μm, 7 μm to 10 μm, 9 μm to 10 μm, 1 μm to 6 μm, 3 μm to 7 μm, 4 μm to 8 μm, 5 μm to 9 μm, 6 μm to 7 μm, 6 μm to 8 μm, 6 μm to 9 μm, 7 μm to 8 μm, 7 μm to 9 μm, or 8 μm to 9 μm, but is not limited to these.

[0024] The "total thickness variation (TTV)" in this specification is the difference in thickness between the thickest and thinnest parts of the wafer. Specifically, it is the difference between the maximum and minimum thicknesses from the wafer's reference surface when the wafer is in intimate contact with the reference surface.

[0025] 1, the upper surface of the ceramic wafer 100 is the front surface of the ceramic wafer 100 (hereinafter abbreviated as "front"), the lower surface of the ceramic wafer 100 is the rear surface of the ceramic wafer 100 (hereinafter abbreviated as "rear"), and at least one of the upper surface and the lower surface has an irregular surface shape. In a preferred embodiment, the upper surface is concave, convex or irregular, and the lower surface is flat, concave or convex. Therefore, the shape of the ceramic wafer 100 includes, but is not limited to, a convex front and a flat back (A), a concave front and a flat back (B), an irregular front and a flat back (C), a convex front and a convex back (D), a concave front and a convex back (E), an irregular front and a convex back (F), a convex front and a concave back (G), a concave front and a concave back (H), an irregular front and a concave back (I), a convex front and an irregular back (J), a concave front and an irregular back (K), and an irregular front and a regular back (L). The ceramic wafer 100 having the above surface shape contributes to the subsequent coating process and enhances the ceramic bonding strength.

[0026] The term "ceramic wafer" as used herein refers to a polycrystalline or single crystalline material, the components of which are ceramic or semiconductor materials. Here, "ceramic" refers to a non-metallic inorganic solid material obtained by high-temperature treatment of a compound of metal and non-metal, including silicates, oxides, carbides, nitrides, sulfides, borides, etc., and preferably includes, but is not limited to, those selected from the group consisting of aluminum nitride, alumina, silicon carbide, and silicon nitride. In a preferred embodiment, the material of the ceramic wafer is aluminum nitride, silicon nitride, alumina, silicon oxide, nitride, oxide, or carbide of silicon carbide. Ceramics have high dielectric constant, insulation, high thermal conductivity, heat resistance, and good heat dissipation, and have stable performance especially under high humidity, making them suitable for the manufacture of electronic products. Ceramic wafers also have good processability and can be manufactured into wafer sizes with high precision.

[0027] As used herein, "single crystal or polycrystalline material" refers to single crystal orientation material and polycrystalline orientation material, the difference being that when a molten simple substance solidifies, the atoms arrange themselves in a diamond lattice to form multiple crystal nuclei, and when the crystal nuclei grow into grains with the same crystal plane orientation, a single crystal material is formed; in contrast, when the crystal nuclei grow into grains with different crystal plane orientations, a polycrystalline material is formed.

[0028] The present invention also provides a method for producing a method for manufacturing a semiconductor device comprising the steps of: (1) a ceramic green body is processed at a high temperature to produce a ceramic sheet, or (2) a ceramic wafer having a thin film or circuit on its surface is prepared, and Step 2: placing the ceramic sheet or the ceramic wafer to be regenerated on a mounting plate, and subjecting the upper and lower surfaces of the ceramic sheet to a processing treatment including grinding, polishing, etching, plasma or mechanical processing to form a ceramic wafer having a surface shape; A method for producing a ceramic wafer having the surface profile is also provided.

[0029] Step 1(1) of the manufacturing method for producing a ceramic green body includes forming a ceramic green body from ceramic particles through a manufacturing process, and the ceramic green body is subjected to high temperature treatment and processing to form a ceramic sheet.

[0030] Wafer processing types described herein include chemical machining, mechanical machining, and chemical-mechanical machining.

[0031] 2, in a preferred embodiment, the grinding method of the present invention is single-sided grinding 200, specifically, a ceramic wafer 220 is placed on a high-speed rotating table equipped with a mounting disc 230, the ceramic wafer 220 is fixed at the center of rotation of the mounting disc 230, and then rotated, the mounting disc 230 is pressed against a grindstone 210, and one surface of the ceramic wafer 220 is slowly ground by the grindstone 210. Here, the single-sided grinding is performed by adjusting the angle of the mounting disc 230 to grind the surface of the ceramic wafer 220 with the grindstone 210 (A), or by adjusting the angle of the grindstone 210 or controlling the angle shape of the grindstone 210 (B) to grind the surface of the ceramic wafer 220, thereby controlling the surface shape of the ceramic wafer 220. When single-sided grinding is used, a UV adhesive, a hot melt adhesive, or a coating material can be applied to the back surface of the ceramic wafer to improve uniformity.

[0032] The "mounting disk" described herein may be a vacuum chuck or a chuck that attracts the ceramic wafer by forming a vacuum between the ceramic wafer and the mounting disk, and the chuck surrounds and grips the ceramic wafer, securing it in place.

[0033] 3, in a preferred embodiment, the grinding method of the present invention is double-sided grinding 300, specifically, a ceramic wafer 320 is placed on a high-speed rotating table provided with a lower grinding disk 330, the ceramic wafer 320 is fixed at the center of rotation of the lower grinding disk 330, and an upper grinding disk 310 and a lower grinding disk 330 are brought into close contact with the ceramic wafer 320, and double-sided processing is performed at the same time. Here, in double-sided grinding, the angle of the grinding disk (A) or the shape of the grinding teeth (not shown) (B) on the grinding disk is adjusted to grind the surface of the ceramic wafer 320, thereby controlling the surface shape of the ceramic wafer 320.

[0034] 4, in a preferred embodiment, the polishing method of the present invention is single-sided polishing 400, specifically, a ceramic wafer 420 is placed on a high-speed rotating table equipped with a polishing disc 430, the ceramic wafer 420 is fixed at the center of rotation of the polishing disc 430, and then rotated, the polishing disc 430 is pressed against a grindstone 410, and one surface of the ceramic wafer 420 is slowly polished by the polishing disc 430. Here, in the single-sided polishing, the surface of the ceramic wafer 420 is polished by adjusting the angle (A) of the polishing disc 430 or the shape (B) of the polishing disc 430, and the surface shape of the ceramic wafer 420 can be controlled by adjusting the angle or shape of the polishing disc 430.

[0035] 5, in a preferred embodiment, the polishing method of the present invention is double-sided polishing 500, specifically, a ceramic wafer 520 is placed on a high-speed rotating table equipped with a lower polishing disc 530, the ceramic wafer 520 is fixed at the center of rotation of the lower polishing disc 530, and an upper polishing disc 510 and a lower polishing disc 530 are brought into close contact with the ceramic wafer 520, and double-sided processing is performed at the same time. Here, double-sided polishing is performed by adjusting the angle (A) or shape (B) of the polishing disc 530 to polish the surface of the ceramic wafer 520, and by adjusting the angle or shape of the upper and lower polishing discs, the surface of the ceramic wafer has different shapes.

[0036] In a preferred embodiment, the etching method of the present invention is a dry etching or wet etching method, in which the ceramic wafer is immersed in an etching solution to etch the ceramic wafer so as to have a shape on the surface. In a preferred embodiment, the present invention also allows a ceramic wafer having a surface shape to be formed by a method of inflicting plasma damage on the surface of a ceramic wafer. EXAMPLES

[0037] The following non-limiting examples of each aspect of the present invention are provided primarily to illustrate each aspect of the present invention and the advantages it provides.

[0038] The following provides a non-limiting method for manufacturing ceramic wafers having surface shapes. Three non-limiting examples of ceramic wafers having surface shapes (Examples 1-3) and three comparative examples having surface shapes (Comparative Examples 1-3) are manufactured in a manner similar to the method disclosed above. However, the specific methods for manufacturing Examples 1-3 and Comparative Examples 1-3 differ from the method disclosed above in one or more respects.

[0039] (surface defect measurement) Here, the present invention measures the surface defects of the ceramic wafer. Specifically, the measurement flow is to inspect and measure the number, size and shape of defects on the ceramic wafer after coating the ceramic wafer.

[0040] Examples 1-3 and Comparative Examples 1-3 were evaluated to determine the characteristics of ceramic wafers having these surface configurations. Table 1 shows a summary of the attributes of Examples 1-3 and Comparative Examples 1-3 and the defect states of ceramic wafers having these surface configurations after coating.

[0041] [Table 1]

[0042] According to the measurement results, Example 1 had approximately 300 surface defects, Example 2 had 10 surface defects, and Example 3 had 15 surface defects, which means that the number and size of the defects are smaller than those of Comparative Examples 1 to 3.

[0043] Measurement results of specific examples of the present invention show that by controlling the thickness variation over the entire surface of the ceramic wafer, the ceramic wafer provided by the present invention can effectively improve surface defects after coating, thereby improving the overall yield of the ceramic wafer.

[0044] In summary, the surface of the ceramic wafer having the surface shape of the present invention has an irregular shape and a total thickness variation (TTV) of 0.1 to 100 μm, which contributes to the coating process and aids the flow of fluid as it passes through the uneven thickness surface, thereby enhancing the ceramic bonding strength during subsequent manufacturing processes.

[0045] All ranges provided herein are intended to include each specific range within the stated range, and combinations of subranges between the stated ranges. Also, any range explicitly stated herein includes its endpoints unless otherwise indicated. Thus, the range 1-5 specifically includes 1, 2, 3, 4, and 5, as well as subranges 2-5, 3-5, 2-3, 2-4, 1-4, etc.

[0046] All publications and patent applications cited in this specification are herein incorporated by reference and for all purposes are to the same extent as if each individual publication or patent application was specifically and individually indicated to be incorporated by reference herein. In the event of a conflict between the specification and a publication or patent application incorporated by reference herein, the specification shall control.

[0047] As used herein, the terms "comprising," "having," and "including" have an open-ended, non-limiting meaning. The terms "a" and "the" may be intended to include the plural as well, unless the context clearly indicates otherwise in the singular. The term "one or more" means "at least one," and thus can include a single feature or a mixture / combination.

[0048] Other than in the examples described herein, or unless otherwise specified, all numerical values ​​expressing amounts of ingredients and / or reaction conditions can be modified in all instances by the term "about," which means within ±5% of the stated numerical value. As used herein, the terms "essentially free" or "substantially free" mean less than about 2% of a particular feature. Any element or feature explicitly described in this specification can be negatively excluded from the claims.

[0049] Although the present invention has been described in detail above, what has been described above is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto. Of course, equivalent modifications and adaptations based on the claims of the present invention are included within the scope of protection of the present invention. [Explanation of symbols]

[0050] 100 Ceramic Wafer 200 Single-sided grinding 210, 410 Grindstone 220, 320, 420, 520 Ceramic wafer 230 Placing disc 300 Double-sided grinding 310 Upper Grinding Disc 330 Lower Grinding Disc 400 Single side polishing 430 Abrasive Disc 500 Double-sided polishing 510 Upper Grinding Disc 530 Lower Grinding Disc

Claims

1. a top surface and a bottom surface, both of which have a non-irregular surface profile; The total thickness variation (TTV) between the upper surface and the lower surface is in the range of 0.1 to 100 μm. A ceramic wafer having a surface feature.

2. 2. The ceramic wafer having a surface shape according to claim 1, wherein the thickness variation across the entire surface is in the range of 0.1 to 10 μm.

3. 2. A ceramic wafer having the surface shape described in claim 1, wherein the surface shape is a convex front and a flat back, a concave front and a flat back, a convex front and a convex back, a concave front and a convex back, a convex front and a concave back, or a concave front and a concave back.

4. 2. The ceramic wafer having the surface shape according to claim 1, wherein the material of the ceramic wafer is aluminum nitride, silicon nitride, alumina, silicon oxide, a nitride, an oxide or a carbide of silicon carbide.

5. A method for producing a ceramic wafer having a surface shape according to any one of claims 1 to 4, comprising the steps of: (1) a ceramic green body is processed at a high temperature to produce a ceramic sheet, or (2) a ceramic wafer having a thin film or circuit on its surface is prepared; and Step 2: placing the ceramic sheet or the ceramic wafer to be regenerated on a mounting plate, and subjecting the upper and lower surfaces of the ceramic sheet to a processing treatment including grinding, polishing, etching, plasma or mechanical processing to form a ceramic wafer having a surface shape; A manufacturing method comprising:

6. 6. The manufacturing method according to claim 5, wherein the grinding is one-sided grinding, and the surface of the ceramic wafer is ground with a grinding wheel by adjusting the angle of the mounting disk, or the angle of the grinding wheel or grinding disk is adjusted, or the angular shape of the grinding wheel is controlled to grind the surface of the ceramic wafer.

7. The method according to claim 5, wherein the grinding is double-sided grinding, and the shape of a grinding disk is adjusted to grind the surface of the ceramic wafer.

8. The method according to claim 5, wherein the polishing is one-sided polishing, and the angle or shape of an abrasive disk is adjusted to polish the surface of the ceramic wafer.

9. The method according to claim 5 , wherein the polishing is double-sided polishing, and the angle or shape of an abrasive disk is adjusted to polish the surface of the ceramic wafer.

10. The method according to claim 5 , wherein the etching method is dry etching or wet etching.

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