Gas injection system and wafer processing apparatus using the same

Abstract

To enhance the extent to which a reactant gas is mixed, which may be important for wafer uniformity, in wafer processing.SOLUTION: A gas input structure for providing gas used in a wafer processing chamber is presented. The structure comprises a flow control ring having a sealing part and a retaining ring; and an outer body configured to encircle the flow control ring, the outer body having at least one gas tunnel, the at least one gas tunnel comprising a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet; wherein the retaining ring has a plurality of holes; and wherein a sealed gas space is formed between the flow control ring and the outer body, the sealed gas space containing a gas from the at least one gas tunnel to be injected through the plurality of holes into a gas channel, wherein the gas channel is connected to a wafer processing chamber.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a gas injection system and a wafer processing apparatus using the gas injection system, and more particularly to a gas injection system that can mix gases injected into a reaction chamber in the wafer processing apparatus. The present disclosure may be used in wafer processing apparatus both with and without a remote plasma unit (RPU). [Background technology]

[0002] Some wafer processing equipment, which may be equipped with a showerhead, may feed two or more gases (e.g., reactant gases and precursors) into the reaction chamber for wafer processing, while other wafer processing equipment, which is equipped with an RPU and may not be equipped with a showerhead, may feed one gas (e.g., a source gas) into the reaction chamber for wafer processing.

[0003] In wafer processing, the degree to which reactant gases are mixed can be important for wafer uniformity.

[0004] Accordingly, the present disclosure presents a gas injection system and a wafer processing apparatus using the gas injection system to maximize gas mixing for wafer processing.

[0005] This Summary is provided to introduce selected concepts in a simplified form. These concepts are described in more detail in the Detailed Description of Example Embodiments of the Disclosure below. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Summary of the Invention [Means for solving the problem]

[0006] According to one embodiment, a gas input structure for providing gas for use in a wafer processing chamber may be provided, the structure comprising: a flow control ring having a seal and a retaining ring; and an outer body configured to surround the flow control ring, the outer body having at least one gas tunnel, each of the gas tunnels comprising a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet, the retaining ring having a plurality of holes, and a gas space formed between and sealed between the flow control ring and the outer body to contain gas from the at least one gas tunnel injected through the plurality of holes.

[0007] In at least one embodiment, the hole implant angle is between 0 degrees and 80 degrees.

[0008] In at least one embodiment, the downward angle of the holes is between 0 degrees and 50 degrees.

[0009] In at least one embodiment, the length of the flow control ring is between 4 mm and 100 mm.

[0010] In at least one embodiment, the flow control ring has a thickness of between 1 mm and 10 mm.

[0011] According to another embodiment, a wafer processing apparatus may be provided comprising a reaction chamber, a flow control ring having a seal and a retaining ring, and a gas input structure comprising an outer body configured to surround the flow control ring, the outer body having at least one gas tunnel, each of the gas tunnels comprising a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet, wherein the retaining ring has a plurality of holes, and a gas space is formed between and sealed between the flow control ring and the outer body to contain gas from the at least one gas tunnel injected through the plurality of holes.

[0012] In at least one embodiment, the hole implant angle is between 0 degrees and 80 degrees.

[0013] In at least one embodiment, the downward angle of the holes is between 0 degrees and 50 degrees.

[0014] In at least one embodiment, the length of the flow control ring is between 4 mm and 100 mm.

[0015] In at least one embodiment, the flow control ring has a thickness of between 1 mm and 10 mm.

[0016] It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale - for example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of the illustrated embodiments of the present disclosure. [Brief description of the drawings]

[0017] [Figure 1] 1A illustrates one embodiment of a gas injection system according to the present disclosure in a wafer processing apparatus equipped with a remote plasma unit (RPU) (a), and another embodiment in a wafer processing apparatus equipped with a showerhead and no RPU (b). [Diagram 2] FIG. 1 is a perspective view of a gas injection system according to one embodiment of the present disclosure. [Diagram 3] 3A is a top view of FIG. 2, and FIG. 3B is a diagram showing the inner flow control ring of FIG. 2A. [Figure 4] FIG. 3 is a side view of FIG. 2. [Diagram 5] 1A shows a perspective view of a gas injection system according to another embodiment of the present disclosure, and FIG. 1B shows a top view of the gas injection system of FIG. [Figure 6] 1A is a top view of another gas injection system having three injection points according to another embodiment of the present disclosure; FIG. 1B is a top view of another gas injection system having four injection points according to another embodiment of the present disclosure; [Figure 7]1A is a top view of a flow control ring having an implant angle of zero degrees (0°) according to an embodiment of the present disclosure, and FIG. 1B is a top view of a flow control ring having an implant angle of non-zero degrees according to another embodiment of the present disclosure. [Figure 8] FIG. 13 is a side view of a flow control ring having a non-zero degree downward angle according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] Although certain specific embodiments and examples are disclosed below, it will be understood by those skilled in the art that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention, and obvious modifications and equivalents thereof, and therefore it is not intended that the scope of the disclosed invention should be limited by the specific disclosed embodiments described below.

[0019] As used herein, the term "substrate" may refer to any underlying material or materials, including any underlying material or materials, on which a device, circuit, or film may be formed, that may be modified or on which a device, circuit, or film may be formed. A "substrate" may be continuous or non-continuous, rigid or flexible, solid or porous, and combinations thereof. A substrate may be in any form, such as a powder, a plate, or a workpiece. Substrates in the form of a plate may include wafers of various shapes and sizes. Substrates may be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0020] As an example, the substrate in the form of a powder may have applications for pharmaceutical manufacturing. The porous substrate may include a polymer. Examples of workpieces may include medical devices (e.g., stents and syringes), jewelry, tooling devices, components for battery manufacturing (e.g., anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0021] The continuous substrate may extend beyond the boundaries of the process chamber in which the deposition process occurs. In some processes, the continuous substrate may move through the process chamber, such that the process continues until the end of the substrate is reached. The continuous substrate may be fed from a continuous substrate feed system to enable the production and output of the continuous substrate in any suitable form.

[0022] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, webs, flexible materials, bundles of continuous filaments or fibers (e.g., ceramic or polymeric fibers). Continuous substrates may also include carriers or sheets onto which the non-continuous substrates are placed.

[0023] The illustrations presented herein are not meant to be the actual appearance of any particular materials, structures, or devices, but merely idealized representations used to describe embodiments of the present disclosure.

[0024] The particular implementations shown and described are illustrative of the invention and its best mode and are not intended to otherwise limit the scope of aspects and implementations in any way. Indeed, for the sake of brevity, conventional manufacturing, association, preparation, and other functional aspects of the system may not be described in detail. Furthermore, the connecting lines shown in the various figures are intended to represent example functional relationships and / or physical couplings between the various elements. Many alternative or additional functional relationships or physical connections may be present in an actual system and / or may not be present in some embodiments.

[0025] It should be understood that the configurations and / or approaches described herein are exemplary in nature, and that these specific embodiments or examples are not to be construed in a limiting sense, since numerous variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Thus, the various illustrated operations may be performed in the order illustrated, in other orders, or omitted in some cases.

[0026] The subject matter of the present disclosure includes all novel and non-obvious combinations and subcombinations of the various processes, systems, and configurations, and other features, functions, operations and / or properties disclosed herein, as well as all equivalents thereof.

[0027] 1(a) and 1(b) illustrate two examples of how a gas injection system can be used in various wafer processing devices.

[0028] 1(a) illustrates a wafer processing device 100 having a remote process unit (RPU) 110. In this device, source gases may be injected into a reaction chamber 112 by a gas injection system 111 through locations 113, 114.

[0029] 1(b) illustrates a wafer processing device 120 with a showerhead 123 and without any RPU. In this case, reactant and precursor gases may be injected into a reaction chamber 122 through a gas injection system 121 at locations 124, 125, respectively.

[0030] The same gas injection system can be used in the two different devices illustrated in Figures 1(a) and 1(b).

[0031] A gas injection system 200 according to an embodiment of the present disclosure is illustrated in FIG.

[0032] The gas injection system 200 may include a flow control ring 210 and an outer body 220. The flow control ring 210 may be inserted into the outer body 220, as shown in FIG.

[0033] Flow control ring 210 may have a circular shape and may have a sealing portion 211 and a retaining ring 212 disposed below sealing portion 211. Seal portion 211 may be shaped to protrude from retaining ring 212 and seal a space between flow control ring 210 and outer body 220, which will be described below.

[0034] The outer body 220 may surround the flow control ring 210 and may include two or more gas tunnels 221, 241. The outer body 220 may surround the flow control ring 210 when the flow control ring 210 is inserted into the outer body 220.

[0035] The sealing portion 211 of the flow control ring 210 may be shaped to protrude from the retaining ring 212 so that the sealing portion 211 can seal the gas space 230 defined by the sealing portion 211, the retaining ring 212 (the flow control ring 210), and the inside of the outer body 220.

[0036] When flow control ring 210 is inserted into outer body 220 , gas space 230 may be sealed off from the outside, except for holes 213 .

[0037] The gas tunnel 221 may include a gas inlet 222 , a gas outlet 224 , and a gas passage 223 connecting the gas inlet 222 and the gas outlet 224 .

[0038] There may be one or more gas tunnels 221 , 241 within the outer body 220 , and the other gas tunnel 241 may also include a gas inlet 242 , a gas outlet 244 , and a gas passage 243 connecting the gas inlet 242 and the gas outlet 244 .

[0039] The gas tunnels 221, 241 may be sealed off by valves (not shown) which will be connected to the respective gas inlets 222, 242 after the gas has been injected into the gas tunnels 221, 241.

[0040] When the flow control ring 210 is inserted into the outer body 220, a gas space 230 may be defined by the flow control ring 210 and the outer body 220, and gas from the gas tunnels 221, 241 may be contained within the sealed gas space 230.

[0041] For example, if there are two gas tunnels 221, 241 as shown in FIG. 2, the same gas may be inserted into the gas tunnels 221, 241 ("feed gas" as shown in FIG. 1(a)), or different gases may be inserted into each of the gas tunnels 221, 241 ("reactants and precursors" as shown in FIG. 1(b)).

[0042] FIG. 3(a) shows a top view of FIG.

[0043] The shape of the outer body 320 may be circular, or rectangular, or any other shape that may be suitable for the wafer processing device to which it is attached.

[0044] In Fig. 3(a), there may be two gas tunnels 321, 341. The two opposite gas tunnels 321, 341 are not located along the same line or plane. This feature may allow the gas circulating in the gas space 330 to move faster because the direction (rotation) of the gas already circulating in the gas space 330 and the direction of the incoming gas from both gas tunnels 321, 341 (A, B) are the same, so the gas entering the gas space 330 from both gas tunnels 321, 341 may accelerate the gas already circulating in the gas space 330.

[0045] In FIG. 3(a), the direction of the gas rotating in the gas space 330, the “rotational direction”, is clockwise; in another embodiment, the rotational direction would be counterclockwise using different positions of the gas tunnels 321, 341.

[0046] Each of the gas tunnels 321, 341 may include a gas inlet 322, 342, a gas outlet 324, 344, and a gas flow passage 323, 343. The gas flow passage 323, 343 may connect the gas inlets 322, 342 and the gas outlets 324, 344, respectively. The gas inlets 322, 342 may be connected to an outer pipe (not shown) that is connected to a gas supply.

[0047] Gas from the gas inlets 322, 342 may flow through gas passages 323, 342 to gas outlets 324, 344. Gas may flow out of the gas tunnels 321, 341 and into the gas space 330.

[0048] Within the gas space 330, gas may circulate clockwise or counterclockwise around the gas space depending on the direction of the gas tunnels 321, 341 into the gas space 330. In this embodiment, gas may circulate in a clockwise direction.

[0049] The gas will flow into gas channels 340 which may be connected to the reaction chamber (112 in FIG. 1(a) and 122 in FIG. 1(b)).

[0050] A gas space 330 may be between the outer body 320 and the flow control ring 310. The gas in the gas space 330 may flow through the plurality of holes 313 while circulating around the gas space 330, into the gas channels 340, and then into the reaction chambers 112, 122 for wafer processing.

[0051] FIG. 4 illustrates a side view of FIG.

[0052] The flow control ring 410 is inserted into the outer body 400 of Figure 4. The seal 411 allows for a complete seal of the gas space 430 between the outer body 400 and the flow control ring 410. There are two gas tunnels 420, 440 that may direct gas into the gas channel 450 and ultimately into the reaction chamber (not shown).

[0053] The flow control ring 410 may include a seal 411, a retaining ring 412, and a number of holes 413 on the retaining ring 412. The gas tunnels 420, 440 may include gas inlets 421, 441, gas outlets 423, 443, and gas flow paths 422, 442.

[0054] The same gas or different gases may be injected into the gas inlets 421, 441. For example, the same source gas may be injected into the gas inlets 421, 441, and in other cases, reactant and precursor gases will be injected into the gas inlets 421, 441, respectively.

[0055] Gas inside gas space 430 may circulate around flow control ring 410 and, if possible, through holes 413 into gas channel 450 and ultimately into a reaction chamber (not shown) for wafer processing.

[0056] FIG. 5(a) illustrates a perspective view of a gas injection system according to another embodiment of the present disclosure, and FIG. 5(b) illustrates a top view of the gas injection system of FIG. 5(a).

[0057] Flow control ring 510, which may include seal 511, and retaining ring 512 and multiple holes 513 on retaining ring 512, can be clearly seen.

[0058] In this embodiment, the outer body 520 is shaped to be a circle with a hollow center for the flow control ring 510 to be inserted.

[0059] The two gas tunnels 524, 544 each include a gas inlet 521, 541, a gas outlet 523, 543, and a gas flow passage 522, 542. Gas injected into the gas inlets 521, 541 will swirl around the flow control ring 510 in the gas space 530.

[0060] Gas in the gas space 530 will flow through the multiple holes 513 into the gas channels 550 and then into the reaction chambers (112, 122 in Figures 1(a) and 1(b), respectively) for wafer processing.

[0061] Unlike FIG. 3(a), the two gas tunnels are on the same plane or line indicated by the line S.

[0062] In this embodiment, the direction of the gas circulating within the gas space 530 may be determined by chance. Gas entering the gas space 530 from the gas outlets 523, 543 may impinge on the flow control ring 510 and create vortices within the gas space 530.

[0063] FIG. 6(a) illustrates another embodiment of a gas injection system having three gas tunnels, and FIG. 6(b) illustrates another embodiment of a gas injection system having four gas tunnels.

[0064] The angles (angle 1, angle 2, angle 3) between gas tunnels 611, 612, 613 as shown in FIG. 6(a) will be 120 degrees to maximize gas mixing within gas space 620, but this can be changed to meet needs.

[0065] Also, in the case of four gas tunnels, the angles (angle A, angle B, angle C, angle D) between gas tunnels 631, 632, 633, 634 as shown in FIG. 6(b) will be 90 degrees to maximize gas mixing within gas space 640, but this can also be modified to meet the operating environment.

[0066] The gas tunnels 611, 612, 613 in FIG. 6(a) and 631, 632, 633, 634 in FIG. 6(b) are oriented at center points C1 and C2, respectively, of the gas channels 625, 645. However, for example, the gas tunnels (614 in FIG. 6(a) and 635 in FIG. 6(b)) may not be oriented at center points C1, C2 (D1, D2, respectively).

[0067] The direction of the gas tunnel may be arbitrarily determined to satisfy operational processing efficiency.

[0068] 7(a), the direction (horizontal gas injection direction) of holes 711 in flow control ring 710 may be the center 712 of the flow control ring. In this case, the horizontal gas injection direction (G1) from holes 711 is the same as the direction from holes 711 to the center 712 of the flow control ring 710.

[0069] The angle between the horizontal direction of gas injection from holes 711 and the direction from holes 711 to the center 712 of flow control ring 710 would be the injection angle, and in this case the injection angle (X) would be zero degrees (0°) and all of the holes in flow control ring 710 in FIG. 7( a) would converge at center 712.

[0070] In some cases, this 0 degree injection angle will mean less effective gas mixing, which results in poor uniformity and resulting product quality. Therefore, to improve gas mixing efficiency, sometimes the injection angle (Y) may be anything other than 0° as in FIG. 7(b). The injection angle may be chosen to meet the wafer processing requirements, e.g., 0°-80°, and in this case, all holes in the flow control ring 720 of FIG. 7(b) will not converge at the center 722.

[0071] For efficient gas injection using a non-zero injection angle, the flow control ring should be thick enough to fit into the through-hole. The thickness (t) of the flow control ring 720 in FIG. 7(b) may be chosen to meet the system requirements, e.g., 1 mm to 10 mm.

[0072] In FIG. 8, a side view of flow control ring 810 and holes 811 may be illustrated.

[0073] The angle between the horizontal side direction (H) of the flow control ring of hole 811 and the gas injection downward direction (D) of hole 811 may be defined as the downward angle, and the downward angle of hole 811 in FIG. 8 will be 45°. The downward angle of hole 811 will be selected to meet the requirements of the process, for example, 0°-50°.

[0074] The downward angles of the holes in the flow control ring 810 may be the same or different between themselves.

[0075] Since the length (d) of the flow control ring 810 may determine the number of holes 811 in the retaining ring 813 of the flow control ring, the length (d) of the flow control ring 810 may vary from 4 mm to 100 mm for maximum gas mixture effect.

[0076] The inner diameter (L) of the flow control ring 810 in FIG. 8 may vary between 20 mm and 200 mm, and the hole diameter may vary between 0.5 mm and 5 mm.

[0077] The above-described arrangements of the devices are merely illustrative of the application of the principles of the invention, and numerous other embodiments may exist, and numerous other modifications may be made, without departing from the spirit and scope of the invention as defined in the claims. The scope of the invention should therefore not be determined with reference to the above description, but should instead be determined with reference to the appended claims, along with their full scope of equivalents.

Claims

1. 1. A gas input structure for providing a gas for use in a wafer processing chamber, said structure comprising: a flow control ring having a seal and a retaining ring; an outer body configured to surround the flow control ring, the outer body having at least one gas tunnel, the at least one gas tunnel comprising a gas inlet, a gas outlet, and a gas flow passage connecting the gas inlet and the gas outlet; Equipped with the retaining ring having a plurality of holes; and a sealed gas space is formed between the flow control ring and the outer body, the sealed gas space containing gas from the at least one gas tunnel injected through the plurality of holes into the gas channel; A gas input structure, wherein the gas channel is connected to a wafer processing chamber.

2. The gas input structure of claim 1 , wherein each of the plurality of holes is inclined at an injection angle and a downward angle.

3. The gas input structure of claim 2 , wherein the injection angle of each of the plurality of holes is between 0 degrees and 80 degrees.

4. The gas input structure of claim 2 , wherein the downward angle of each of the plurality of holes is between 0 degrees and 50 degrees.

5. The gas input structure of claim 1 , wherein the length of the flow control ring is between 4 mm and 100 mm.

6. The gas input structure of claim 1 , wherein the flow control ring has a thickness of between 1 mm and 10 mm.

7. 1. A wafer processing apparatus comprising: A reaction chamber; 1. A gas input structure comprising: a flow control ring having a seal and a retaining ring; an outer body configured to surround the flow control ring, the outer body having at least one gas tunnel, the at least one gas tunnel comprising a gas inlet, a gas outlet, and a gas flow passage connecting the gas inlet and the gas outlet; Equipped with the retaining ring having a plurality of holes; and a sealed gas space is formed between the flow control ring and the outer body, the sealed gas space containing gas from the at least one gas tunnel injected through the plurality of holes into the gas channel; a gas input structure, the gas channel being connected to the reaction chamber; A wafer processing apparatus comprising:

8. The wafer processing apparatus of claim 7 , wherein each of the plurality of holes is inclined at an implant angle and a down angle.

9. The wafer processing apparatus of claim 8, wherein the implant angle of each of the plurality of holes is between 0 degrees and 80 degrees.

10. The wafer processing apparatus of claim 8 , wherein the downward angle of each of the plurality of holes is between 0 degrees and 50 degrees.

11. The wafer processing apparatus of claim 7, wherein the flow control ring has a length between 4 mm and 100 mm.

12. The wafer processing apparatus of claim 7, wherein the flow control ring has a thickness of 1 mm to 10 mm.

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