Semiconductor integrated circuit device, electrical apparatus, and vehicle

Abstract

To provide a semiconductor integrated circuit device capable of appropriately changing settings relating to a plurality of kinds of internal parameters.SOLUTION: A semiconductor integrated circuit device (20) constitutes at least a part of a power supply (2) configured to convert an input voltage into an output voltage. The semiconductor integrated circuit device comprises: a storage section (23) configured to store a plurality of settings relating to a plurality of kinds of internal parameters; a reception section (24) configured to receive an instruction which is sent from the outside of the semiconductor integrated circuit device; and a control section (21) configured to select and validate one of the plurality of settings on the basis of the instruction.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The invention disclosed in this specification relates to a semiconductor integrated circuit device, an electrical device, and a vehicle. [Background technology]

[0002] Conventionally, various power supply devices that supply a power supply voltage to a processor have been developed (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2016-24561 A

[0004] [overview] The processor's functions may be enhanced by updating the processor's software. As the processor functions are enhanced, the maximum current consumption of the processor may increase.

[0005] Conventionally, the internal parameters of a power supply device that supplies a power supply voltage to a processor are designed with a margin at the time of product release, taking into account future software updates for the processor. In other words, conventionally, the internal parameters of a power supply device that supplies a power supply voltage to a processor are not in an optimal state at the time of product release.

[0006] The semiconductor integrated circuit device disclosed in this specification constitutes at least a part of a power supply device configured to convert an input voltage into an output voltage, and includes a storage unit configured to store a plurality of settings related to a plurality of types of internal parameters, a receiving unit configured to receive an instruction sent from outside the semiconductor integrated circuit device, and a control unit configured to select and enable one of the plurality of settings based on the instruction.

[0007] The electrical equipment disclosed in this specification includes a power supply device and a processor configured to execute software using an output voltage of the power supply device as a power supply voltage. The power supply device includes the semiconductor integrated circuit device configured as described above. The processor is configured to be able to update the software through communication.

[0008] The vehicle disclosed in this specification includes the electrical equipment having the above-described configuration. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram showing a schematic configuration of an electrical device according to an embodiment. [Diagram 2] FIG. 2 is a diagram showing an example of setting values ​​of a plurality of types of internal parameters corresponding to a plurality of settings, respectively. [Diagram 3] FIG. 3 is a diagram conceptually illustrating an example of a data table showing the relationship between settings and setting states. [Figure 4] FIG. 4 is a diagram conceptually showing another example of a data table showing the relationship between settings and setting states. [Diagram 5] FIG. 5 is a diagram showing the power efficiency characteristics of each setting. [Figure 6] FIG. 6 is a diagram conceptually showing an example of a data table showing the relationship between the range of the maximum load current and the setting. [Figure 7] FIG. 7 is an external view of the vehicle.

[0010] [Detailed Description] <Electrical equipment> 1 is a diagram showing a schematic configuration of an electrical device according to an embodiment. The electrical device 1 includes a power supply device 2 and a processor 3.

[0011] The power supply device 2 includes a semiconductor integrated circuit device 20, an inductor L1, and an output capacitor C0. In this embodiment, the power supply device 2 is a step-down switching power supply device that converts an input voltage VIN to an output voltage VOUT that is lower than the input voltage VIN, but may be a power supply device other than a step-down switching power supply device. Examples of power supply devices other than step-down switching power supply devices include a linear power supply device, a step-up switching power supply device, and a step-up / step-down switching power supply device.

[0012] The semiconductor integrated circuit device 20 includes a control unit 21, a ROM (Read Only Memory) 22, a multi-time programmable memory 23, a wired communication unit 24, and an analog circuit 25.

[0013] The analog circuit 25 includes a reference voltage source 250, an error amplifier 251, a slope circuit 252, a PWM (Pulse Width Modulation) comparator 253, a clock circuit 254, resistors R1, R2, and Rpc, a capacitor Cpc, drivers D1 to D2, a PMOS (P-channel Metal Oxide Semiconductor) transistor Q1, and an NMOS (N-channel Metal Oxide Semiconductor) transistor Q2.

[0014] An input voltage VIN is applied to the source of the PMOS transistor Q1. The source of the NMOS transistor Q2 is connected to the ground potential. A pulse-shaped switch voltage is generated at each drain of the PMOS transistor Q1 and the NMOS transistor Q2 by the complementary switching operations of the PMOS transistor Q1 and the NMOS transistor Q2.

[0015] The drain of the PMOS transistor Q1 and the drain of the NMOS transistor Q2 are connected to a first end of the inductor L1. The second end of the inductor L1 is connected to a first end of the output capacitor C0. The second end of the output capacitor C0 is connected to the ground potential. The inductor L1 and the output capacitor C0 generate an output voltage VOUT that smoothes the pulsed switch voltage.

[0016] Resistors R1 and R2 divide the output voltage VOUT. An error amplifier 251 outputs an error signal according to the difference between the divided voltage of the output voltage VOUT and a reference voltage output from a reference voltage source 250. A capacitor Cpc and a resistor Rpc compensate the phase of the error amplifier 251.

[0017] The PWM comparator 253 compares the error signal output from the error amplifier 251 with the slope voltage output from the slope circuit 252, and outputs a set signal that is the comparison result. The set signal output from the PWM comparator 253 is a PWM signal with a duty corresponding to the output voltage VOUT. The clock circuit 254 outputs a reset signal that is a clock signal.

[0018] The control unit 21 switches the PMOS transistor Q1 and the NMOS transistor Q2 in a complementary manner based on the set signal and the reset signal. The drive signal for the PMOS transistor Q1 output from the control unit 21 is power-amplified by the driver D1 and then supplied to the gate of the PMOS transistor Q1. The drive signal for the NMOS transistor Q2 output from the control unit 21 is power-amplified by the driver D2 and then supplied to the gate of the NMOS transistor Q2.

[0019] The ROM 22 stores the set values ​​of a plurality of types of internal parameters corresponding to the plurality of settings. Fig. 2 is a diagram showing an example of the set values ​​of a plurality of types of internal parameters corresponding to the plurality of settings. In this embodiment, the ROM 22 stores the set values ​​shown in Fig. 2.

[0020] The ROM 22 stores a switching frequency A1, a circuit constant A2 of the phase compensation circuit, a switching element size A3, and a voltage division ratio A4 as the set values ​​of the internal parameters in the A setting. Similarly, the ROM 22 stores a switching frequency B1, a circuit constant B2 of the phase compensation circuit, a switching element size B3, and a voltage division ratio B4 as the set values ​​of the internal parameters in the B setting. Similarly, the ROM 22 stores a switching frequency C1, a circuit constant C2 of the phase compensation circuit, a switching element size C3, and a voltage division ratio C4 as the set values ​​of the internal parameters in the C setting. Note that the switching frequency, the circuit constant of the phase compensation circuit, the switching element size, and the voltage division ratio are merely examples of the internal parameters. The internal parameters may be other than the switching frequency, the circuit constant of the phase compensation circuit, the switching element size, and the voltage division ratio. Examples of the internal parameters other than the switching frequency, the circuit constant of the phase compensation circuit, the switching element size, and the voltage division ratio include an overcurrent detection threshold in the overcurrent protection function, an overvoltage detection threshold in the overvoltage protection function, and the like.

[0021] The multi-time programmable memory 23 stores a plurality of settings related to a plurality of types of internal parameters. The multi-time programmable memory 23 also stores which of the plurality of settings is valid. Fig. 3 is a conceptual diagram showing an example of a data table showing the relationship between the settings and the setting states. In Fig. 3, the plurality of settings are three, namely, setting A, setting B, and setting C, but are not limited to three, and may be two or four or more.

[0022] 3, the setting A is valid, and the settings B and C are invalid. When the setting A is valid, the control unit 21 controls the analog circuit 25 so that the analog circuit 25 is in accordance with the setting A.

[0023] Specifically, when the A setting is valid, the control unit 21 controls the frequency of the slope voltage output from the slope circuit 252 and the clock frequency of the clock circuit 254 so that the switching frequency becomes A1.

[0024] Furthermore, when the A setting is valid, the control unit 21 controls the capacitor Cpc and the resistor Rpc so that the circuit constant of the phase compensation circuit formed by the capacitor Cpc and the resistor Rpc becomes A2. The capacitor Cpc is, for example, configured by multiple series circuits of a capacitor and a switch connected in parallel. The capacitance value of the capacitor Cpc is varied by controlling each switch by the control unit 21. The resistor Rpc is, for example, configured by multiple series circuits of a resistor and a switch connected in parallel. The resistance value of the resistor Rpc is varied by controlling each switch by the control unit 21.

[0025] Furthermore, when the A setting is valid, the control unit 21 controls the PMOS transistor Q1 and the NMOS transistor Q2, which are switching elements, so that their sizes become A3. The PMOS transistor Q1 is, for example, configured with a plurality of series circuits of a PMOS transistor and a switch connected in parallel. The size of the PMOS transistor Q1 is varied by controlling each switch by the control unit 21. The NMOS transistor Q2 is, for example, configured with a plurality of series circuits of an NMOS transistor and a switch connected in parallel. The size of the NMOS transistor Q2 is varied by controlling each switch by the control unit 21.

[0026] Furthermore, when the A setting is enabled, the control unit 21 controls the resistor R1 so that the voltage division ratio of the resistors R1 and R2 becomes A4. The resistor R1 is configured, for example, by connecting multiple series circuits of resistors and switches in parallel. The resistance value of the resistor R1 is varied by controlling each switch by the control unit 21.

[0027] The wired communication unit 24 performs wired communication with the wired communication unit 32 of the processor 3. As the wired communication between the wired communication unit 24 and the wired communication unit 32, for example, I2C communication or SPI (Serial Peripheral Interface) communication is considered, but wired communication other than I2C communication or SPI communication may also be used.

[0028] The wired communication unit 24 receives an instruction sent from the wired communication unit 32 of the processor 3. The control unit 21 selects one of a plurality of settings based on the instruction received by the wired communication unit 24 and enables the selected setting.

[0029] For example, when the multi-time programmable memory 23 stores the data table shown in Fig. 3 and an instruction to enable the B setting is sent from the wired communication unit 32 of the processor 3 to the wired communication unit 24, the control unit 21 rewrites the stored contents of the multi-time programmable memory 23 from the data table shown in Fig. 3 to the data table shown in Fig. 4. When the multi-time programmable memory 23 stores the data table shown in Fig. 4, the B setting becomes valid and the A setting and the C setting become invalid.

[0030] The processor 3 is, for example, a System on a Chip (SoC), a Micro Controller Unit (MCU), etc. The processor 3 includes a wireless communication unit 30, a multi-time programmable memory 31, and a wired communication unit 32. The processor 3 uses the output voltage VOUT of the power supply device 2 as a power supply voltage, and executes software stored in the multi-time programmable memory 31.

[0031] The processor 3 is capable of updating software by OTA (Over The Air) technology. That is, the processor 3 is capable of updating software by wireless communication with a destination of software update information (e.g., a server) by the wireless communication unit 30. Note that the processor 3 may be capable of updating software by wired communication with a destination of software update information (e.g., a personal computer connected to the electrical device 1 by wire) by the wired communication unit 32 instead of wireless communication by the wireless communication unit 30 or in addition to wireless communication by the wireless communication unit 30.

[0032] When the software is updated, the processor 3 sends an instruction to the semiconductor integrated circuit device 20. More specifically, when the software is updated, the wired communication unit 32 of the processor 3 sends an instruction to the wired communication unit 24 of the semiconductor integrated circuit device 20. This allows the semiconductor integrated circuit device 20 to change settings at an appropriate timing.

[0033] The processor 3 does not need to send an instruction to the semiconductor integrated circuit device 20 every time the software is updated. When the function of the processor 3 is enhanced by a software update and it becomes necessary to change the settings of the semiconductor integrated circuit device 20, the processor 3 may send an instruction to the semiconductor integrated circuit device 20 when the software is updated.

[0034] As described above, the semiconductor integrated circuit device 20 changes the settings of multiple types of internal parameters based on an instruction from outside the semiconductor integrated circuit device 20 (the processor 3 in this embodiment). On the other hand, the setting values ​​of the internal parameters cannot be changed individually and arbitrarily by an instruction from outside the semiconductor integrated circuit device 20 (the processor 3 in this embodiment). In other words, from the outside of the semiconductor integrated circuit device 20 (the processor 3 in this embodiment), the internal structure of the semiconductor integrated circuit device 20 is a black box, and there is no room for selection except for the multiple settings (the A setting, the B setting, and the C setting in this embodiment) stored in the multi-time programmable memory 23 of the semiconductor integrated circuit device 20. Therefore, the semiconductor integrated circuit device 20 can appropriately change the settings of multiple types of internal parameters.

[0035] The manufacturer of the semiconductor integrated circuit device 20 discloses to the manufacturer of the electrical equipment 1 the multiple settings (in this embodiment, setting A, setting B, and setting C) stored in the multi-time programmable memory 23 and the power efficiency characteristics of each setting. FIG. 5 is a diagram showing the power efficiency characteristics of each setting. The horizontal axis of FIG. 5 represents the load current of the power supply device 2 (power consumption of the processor 3). The vertical axis of FIG. 5 represents the power efficiency of the power supply device 2. FIG. 5 depicts a power efficiency characteristic TA in setting A, a power efficiency characteristic TB in setting B, and a power efficiency characteristic TC in setting C.

[0036] 5, the semiconductor integrated circuit device 20 may be in setting A at the time of product release of the electrical equipment 1. Then, when a software update is triggered, the setting of the semiconductor integrated circuit device 20 may be changed from setting A to setting B or setting C based on an instruction from outside the semiconductor integrated circuit device 20.

[0037] In the above-described embodiment, the instruction from outside the semiconductor integrated circuit device 20 directly instructs whether the setting of the semiconductor integrated circuit device 20 should be the A setting, the B setting, or the C setting.

[0038] The instruction from outside the semiconductor integrated circuit device 20 may include information regarding the maximum load current of the power supply device 2, rather than directly instructing whether the setting of the semiconductor integrated circuit device 20 should be setting A, setting B, or setting C.

[0039] When the electrical equipment 1 is adapted to include an instruction from outside the semiconductor integrated circuit device 20 that includes information related to the maximum load current of the power supply device 2, the ROM 22 may store, for example, a data table as shown in Fig. 6. Fig. 6 is a conceptual diagram showing an example of a data table indicating the relationship between the range and setting of the maximum load current of the power supply device 2. The control unit 21 may rewrite the stored contents of the multi-time programmable memory 23 based on the instruction from outside the semiconductor integrated circuit device 20 and the data table shown in Fig. 6.

[0040] <Application Examples> The above-mentioned electrical equipment 1 is mounted on, for example, a vehicle 4 as shown in Fig. 7. That is, the vehicle 4 includes the electrical equipment 1. Examples of the electrical equipment 1 mounted on the vehicle 4 include infotainment electrical equipment, ADAS (Advanced Driver-Assistance Systems) electrical equipment, and autonomous driving electrical equipment.

[0041] The above-mentioned electrical equipment 1 is not limited to an in-vehicle electrical equipment, and may be mounted on, for example, a home electric appliance.

[0042] <Other> In addition to the above-described embodiment, various modifications can be made to the configuration of the invention without departing from the spirit of the invention. The above-described embodiment should be considered to be illustrative in all respects and not restrictive, and the technical scope of the present invention is indicated by the claims, not the description of the above-described embodiment, and should be understood to include all modifications that fall within the meaning and scope of the claims.

[0043] <Additional Notes> Regarding the present disclosure, specific configuration examples of which have been shown in the above-mentioned embodiments, additional notes will be provided.

[0044] The semiconductor integrated circuit device (20) of the present disclosure is a semiconductor integrated circuit device constituting at least a part of a power supply device (2) configured to convert an input voltage into an output voltage, and is configured (first configuration) to include a memory unit (23) configured to store a plurality of settings related to a plurality of types of internal parameters, a receiving unit (24) configured to receive instructions sent from outside the semiconductor integrated circuit device, and a control unit (21) configured to select and enable one of the plurality of settings based on the instructions.

[0045] The semiconductor integrated circuit device of the first configuration changes settings related to multiple types of internal parameters based on instructions from outside the semiconductor integrated circuit device. On the other hand, the settings of the internal parameters cannot be changed individually and arbitrarily by instructions from outside the semiconductor integrated circuit device. In other words, from the outside of the semiconductor integrated circuit device, the internal structure of the semiconductor integrated circuit device is a black box, and there is no room for selection except for the multiple settings stored in the storage unit of the semiconductor integrated circuit device. Therefore, the semiconductor integrated circuit device can appropriately change settings related to multiple types of internal parameters. This makes it possible for the semiconductor integrated circuit device to solve the problem that the internal parameters of a power supply device are not optimal at the time of product release.

[0046] In the semiconductor integrated circuit device of the first configuration described above, the storage unit may be a multi-time programmable memory configured to store which of the multiple settings is valid (second configuration).

[0047] The semiconductor integrated circuit device of the first or second configuration may be configured (third configuration) to include a read-only memory unit (22) configured to store setting values ​​of the multiple types of internal parameters corresponding to each of the multiple settings.

[0048] In the semiconductor integrated circuit device of any one of the first to third configurations, the receiving section may be configured to receive the instruction through wired communication (fourth configuration).

[0049] In the semiconductor integrated circuit device of any of the above first to fourth configurations, the instruction may include information regarding a maximum load current of the power supply device (fifth configuration).

[0050] The electrical equipment disclosed herein includes a power supply device (2) and a processor (3) configured to execute software using the output voltage of the power supply device as a power supply voltage, the power supply device including a semiconductor integrated circuit device of any of the first to fifth configurations above, and the processor may be configured to enable updating of the software through communication (sixth configuration).

[0051] In the electrical device of the sixth configuration, the software may be updated using wireless communication (seventh configuration).

[0052] In the electrical device of the sixth or seventh configuration, the processor may be configured to send the instruction to the semiconductor integrated circuit when the software is updated (eighth configuration).

[0053] A vehicle (4) of the present disclosure has a configuration (ninth configuration) including an electrical device of any one of the sixth to eighth configurations. [Explanation of symbols]

[0054] 1 Electrical equipment 2 Power supply 20 Semiconductor integrated circuit device 21 Control section 22 ROM 23 Multi-time programmable memory 24 Wired Communications Department 25 Analog Circuits 250 Reference Voltage Source 251 Error Amplifier 252 Slope Circuit 253 PWM Comparator 254 Clock Circuit 3 Processors 30 Wireless Communication Section 31 Multi-time programmable memory 32 Wired Communications Department 4. Vehicles C0 Output Capacitor Cpc capacitor D1, D2 Driver L1 Inductor Q1 PMOS transistor Q2 NMOS transistor R1, R2, Rpc resistance

Claims

1. 1. A semiconductor integrated circuit device constituting at least a part of a power supply device configured to convert an input voltage into an output voltage, A storage unit configured to store a plurality of settings related to a plurality of types of internal parameters; a receiving unit configured to receive an instruction sent from outside the semiconductor integrated circuit device; a control unit configured to select and enable one of the settings based on the instruction; A semiconductor integrated circuit device comprising:

2. 2. The semiconductor integrated circuit device according to claim 1, wherein said storage section is a multi-time programmable memory configured to store which of said plurality of settings is valid.

3. 2. The semiconductor integrated circuit device according to claim 1, further comprising a read-only storage section configured to store setting values ​​of said plurality of types of internal parameters corresponding to each of said plurality of settings.

4. 2. The semiconductor integrated circuit device according to claim 1, wherein said receiving section is configured to receive said instruction by wired communication.

5. 2. The semiconductor integrated circuit device according to claim 1, wherein the instruction includes information regarding a maximum load current of the power supply device.

6. A power supply device; a processor configured to execute software using the output voltage of the power supply device as a power supply voltage; Equipped with The power supply device includes a semiconductor integrated circuit device according to any one of claims 1 to 5, The processor is configured to be able to update the software through communication.

7. The electrical device according to claim 6 , wherein the software update is performed using wireless communication.

8. The electrical device according to claim 6 , wherein the processor is configured to send the instruction to the semiconductor integrated circuit when the software is updated.

9. A vehicle comprising the electrical equipment according to claim 6.

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