Semiconductor light-emitting device

Abstract

To easily receive laser light from an end-face light-emitting element by a light-receiving element.SOLUTION: A semiconductor light-emitting device 10 includes a substrate 20 including a substrate surface 21, an end-face light-emitting element 30 mounted on the substrate surface 21 and including a first element end face 33 facing in an X direction intersecting a Z direction with respect to the substrate surface 21 and a second element end face 34 facing in the opposite direction to the first element end face 33, and configured such that light is emitted from the first element end face 33 and the second element end face 34, a light-receiving submount 70 provided on the substrate surface 21 and having a mounting surface 71 facing the second element end face 34, and a light-receiving element 40 mounted on the mounting surface 71 and including a light-receiving portion 43 provided on a light-receiving element surface 41 and facing the second element end face 34.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to semiconductor light emitting devices. [Background technology]

[0002] 2. Description of the Related Art Conventionally, semiconductor light emitting devices that include a light emitting diode as a light source are known (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-41866 A

[0004] [overview] When using LED elements, it is difficult to respond to the increase in the output of the light source. Therefore, instead of LED elements, it is possible to respond to the increase in output by using, for example, edge-emitting laser elements. In addition, semiconductor light-emitting devices are being increasingly adopted that include a light-receiving element that receives part of the light emitted from the LED element, and control the intensity of the light emitted from the LED element based on the amount of light received by the light-receiving element. When laser elements are used instead of LED elements in such semiconductor light-emitting devices, it is difficult for the light-receiving element to receive part of the laser light emitted from the laser element, since the laser element has a narrower beam angle than the LED element.

[0005] One embodiment of the present disclosure relates to a semiconductor light emitting device comprising: a substrate including a substrate surface; an end surface light emitting element mounted on the substrate surface and including a first element end surface facing a first direction intersecting a thickness direction perpendicular to the substrate surface and a second element end surface facing the opposite direction to the first element end surface, wherein light is emitted from the first element end surface and the second element end surface; a light receiving submount provided on the substrate surface and having a mounting surface facing the second element end surface; and a light receiving element mounted on the mounting surface and including a light receiving portion provided on the light receiving element surface and facing the second element end surface. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic plan view of the semiconductor light emitting device according to the first embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 2-2 of FIG. [Diagram 3] FIG. 3 is a schematic rear view of the semiconductor light emitting device of FIG. [Figure 4] FIG. 4 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 4-4 in FIG. [Diagram 5] FIG. 5 is a schematic plan view of the semiconductor light emitting device according to the second embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 6-6 in FIG. [Figure 7] FIG. 7 is a schematic plan view of the semiconductor light emitting device according to the third embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 8-8 in FIG. [Figure 9] FIG. 9 is a schematic rear view of the semiconductor light emitting device of FIG. [Figure 10] FIG. 10 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 10-10 in FIG. [Figure 11] FIG. 11 is a schematic plan view of the semiconductor light emitting device according to the fourth embodiment. [Figure 12] FIG. 12 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 12-12 of FIG. [Figure 13] FIG. 13 is a schematic plan view of the semiconductor light emitting device according to the fifth embodiment. [Figure 14] FIG. 14 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 14-14 in FIG. [Figure 15] FIG. 15 is a schematic rear view of the semiconductor light emitting device of FIG. [Figure 16] FIG. 16 is a schematic plan view of the semiconductor light emitting device according to the sixth embodiment. [Figure 17]FIG. 17 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 17-17 in FIG. [Figure 18] FIG. 18 is a schematic cross-sectional view of the semiconductor light emitting device according to the seventh embodiment. [Figure 19] FIG. 19 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 19-19 in FIG. [Figure 20] FIG. 20 is a schematic cross-sectional view of the semiconductor light emitting device according to the eighth embodiment. [Figure 21] FIG. 21 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 21-21 of FIG. [Figure 22] FIG. 22 is a schematic cross-sectional view of a semiconductor light emitting device according to the ninth embodiment. [Diagram 23] FIG. 23 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 23-23 in FIG. [Figure 24] FIG. 24 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example. [Diagram 25] FIG. 25 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example. [Figure 26] FIG. 26 is a schematic plan view of a semiconductor light emitting device according to a modified example. [Figure 27] FIG. 27 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 27-27 in FIG. [Figure 28] FIG. 28 is a schematic plan view of a semiconductor light emitting device according to a modified example. [Figure 29] FIG. 29 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 29-29 in FIG. [Diagram 30] FIG. 30 is a schematic plan view of a semiconductor light emitting device according to a modified example. [Diagram 31] FIG. 31 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 31-31 in FIG. [Diagram 32] FIG. 32 is a schematic plan view of a semiconductor light emitting device according to a modified example. [Diagram 33] FIG. 33 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 33-33 in FIG. [Diagram 34] FIG. 34 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example. [Diagram 35] FIG. 35 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example. [Diagram 36] FIG. 36 is a schematic plan view of the semiconductor light emitting device according to the tenth embodiment. [Figure 37] FIG. 37 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 37-37 in FIG. [Figure 38] FIG. 38 is a schematic rear view of the semiconductor light emitting device of FIG. [Figure 39] FIG. 39 is a schematic plan view of the semiconductor light emitting device according to the eleventh embodiment. [Diagram 40] 40 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line 40-40 in FIG. [Diagram 41] FIG. 41 is a schematic rear view of the semiconductor light emitting device of FIG.

[0007] [Detailed Description] Hereinafter, some embodiments of the semiconductor light emitting device of the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of description, the components shown in the drawings are not necessarily drawn to scale. Also, hatching lines may be omitted in cross-sectional views to facilitate understanding. The accompanying drawings are merely illustrative of embodiments of the present disclosure and should not be considered as limiting the present disclosure.

[0008] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0009] (First embodiment) A semiconductor light emitting device 10 of a first embodiment will be described with reference to FIGS. Fig. 1 is a schematic plan view of a semiconductor light emitting device 10 according to a first embodiment. Fig. 2 is a schematic cross-sectional view of the semiconductor light emitting device 10 taken along line 2-2 in Fig. 1. Fig. 3 is a schematic back view of the semiconductor light emitting device 10 in Fig. 1. Fig. 4 is a schematic cross-sectional view of the semiconductor light emitting device 10 taken along line 4-4 in Fig. 3. Note that the term "plan view" used in the present disclosure refers to viewing an object in the Z direction of the mutually orthogonal XYZ axes shown in Fig. 1.

[0010] (Schematic configuration of a semiconductor light emitting device) 1 and 2, the semiconductor light emitting device 10 includes a substrate 20, an edge light emitting element 30 disposed on the substrate 20, and a light receiving element 40 disposed on the substrate 20. The semiconductor light emitting device 10 includes a light receiving submount 70 on which the light receiving element 40 is mounted. The semiconductor light emitting device 10 may include a light emitting submount 60 on which the edge light emitting element 30 is mounted. The semiconductor light emitting device 10 may also include a cover member 80 that houses at least a portion of the edge light emitting element 30 and at least a portion of the light receiving element 40.

[0011] (substrate) The substrate 20 is a component that supports the edge light emitting element 30 and the light receiving element 40. The substrate 20 is formed in a rectangular flat plate shape with the Z direction being the thickness direction.

[0012] In a plan view, the substrate 20 is formed in a rectangular shape in which the length in the Y direction is shorter than the length in the X direction. The substrate 20 includes a substrate front surface 21, a substrate back surface 22 opposite the substrate front surface 21 in the Z direction, and first to fourth substrate side surfaces 23 to 26 connecting the substrate front surface 21 and the substrate back surface 22. The first substrate side surface 23 and the second substrate side surface 24 form both end surfaces of the substrate 20 in the X direction, and the third substrate side surface 25 and the fourth substrate side surface 26 form both end surfaces of the substrate 20 in the Y direction. The shape of the substrate 20 in a plan view can be changed arbitrarily.

[0013] The substrate 20 is formed of, for example, an insulating material. The substrate 20 may be formed of, for example, a resin material including an epoxy resin. The resin material may include a filler such as glass or ceramics. The substrate 20 may also be formed of, for example, a material including ceramics. Examples of materials including ceramics include aluminum nitride (AlN) and alumina (Al2O3). The substrate 20 formed of a material including ceramics has high heat dissipation performance and can prevent the temperature of the semiconductor light emitting device 10 from becoming excessively high.

[0014] (Surface electrode, back electrode) 1, 2, and 4, the semiconductor light emitting device 10 includes first to fourth surface electrodes 51S to 54S provided on a substrate surface 21. The first to fourth surface electrodes 51S to 54S are formed of a material including one or more appropriately selected from Ti (titanium), TiN (titanium nitride), Au (gold), Ag (silver), Cu (copper), Al (aluminum), and W (tungsten).

[0015] 1, the first surface electrode 51S is disposed closer to the first substrate side surface 23 than the center in the X direction of the substrate surface 21 in a plan view. The first surface electrode 51S is disposed closer to the third substrate side surface 25 than the center in the Y direction of the substrate surface 21 in a plan view. In one example, the first surface electrode 51S is formed in a rectangular shape whose length in the Y direction is longer than its length in the X direction in a plan view. The position and shape of the first surface electrode 51S on the substrate surface 21 can be changed as desired.

[0016] The second surface electrode 52S is disposed at a distance from the first surface electrode 51S. The second surface electrode 52S is disposed at a distance from the first surface electrode 51S in the Y direction in a plan view. The second surface electrode 52S is disposed closer to the first substrate side surface 23 than the center of the substrate surface 21 in the X direction in a plan view. The second surface electrode 52S is disposed closer to the fourth substrate side surface 26 than the center of the substrate surface 21 in the Y direction. It can be said that the second surface electrode 52S is disposed between the first surface electrode 51S and the fourth substrate side surface 26. In one example, the second surface electrode 52S is formed in a rectangular shape whose length in the Y direction is shorter than its length in the X direction in a plan view. The position and shape of the second surface electrode 52S on the substrate surface 21 can be changed arbitrarily.

[0017] The third surface electrode 53S is disposed at a distance from the first surface electrode 51S. The third surface electrode 53S is disposed at a distance from the first surface electrode 51S in the X direction in a plan view. The third surface electrode 53S is disposed closer to the second substrate side surface 24 than the center of the substrate surface 21 in the X direction in a plan view. The third surface electrode 53S is disposed closer to the third substrate side surface 25 than the center of the substrate surface 21 in the Y direction. In one example, the third surface electrode 53S is formed in a rectangular shape whose length in the Y direction is shorter than its length in the X direction in a plan view. The position and shape of the third surface electrode 53S on the substrate surface 21 can be changed arbitrarily.

[0018] The fourth surface electrode 54S is disposed at a distance from the third surface electrode 53S. The fourth surface electrode 54S is disposed at a distance from the third surface electrode 53S in the Y direction in a plan view. The fourth surface electrode 54S is disposed closer to the second substrate side surface 24 than the center of the substrate surface 21 in the X direction in a plan view. The fourth surface electrode 54S is disposed closer to the fourth substrate side surface 26 than the center of the substrate surface 21 in the Y direction. It can be said that the fourth surface electrode 54S is disposed between the third surface electrode 53S and the fourth substrate side surface 26. In one example, the fourth surface electrode 54S is formed in a rectangular shape whose length in the Y direction is shorter than its length in the X direction in a plan view. The position and shape of the fourth surface electrode 54S on the substrate surface 21 can be changed arbitrarily.

[0019] 2 to 4, the semiconductor light emitting device 10 includes first to fourth back surface electrodes 51R to 54R provided on the substrate back surface 22. The first to fourth back surface electrodes 51R to 54R are formed of a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0020] 3, the first back surface electrode 51R is disposed closer to the first substrate side surface 23 than the center in the X direction of the substrate back surface 22 in a plan view. The first back surface electrode 51R is disposed closer to the third substrate side surface 25 than the center in the Y direction of the substrate back surface 22 in a plan view. In one example, the first back surface electrode 51R is formed in a rectangular shape whose length in the Y direction is longer than its length in the X direction in a plan view. In one example, the first back surface electrode 51R is formed to have the same size as the first surface electrode 51S shown in FIG. The position and shape of the first back surface electrode 51R on the substrate back surface 22 can be changed arbitrarily.

[0021] The second back surface electrode 52R is disposed at a distance from the first back surface electrode 51R. The second back surface electrode 52R is disposed at a distance from the first back surface electrode 51R in the Y direction in a plan view. The second back surface electrode 52R is disposed closer to the first substrate side surface 23 than the center in the X direction of the substrate back surface 22 in a plan view. The second back surface electrode 52R is disposed closer to the fourth substrate side surface 26 than the center in the Y direction of the substrate back surface 22 in a plan view. In one example, the second back surface electrode 52R is formed in a rectangular shape whose length in the Y direction is shorter than its length in the X direction in a plan view. In one example, the second back surface electrode 52R is formed to have the same size as the second surface electrode 52S shown in FIG. 1. The position and shape of the second back surface electrode 52R on the substrate back surface 22 can be changed arbitrarily.

[0022] The third back surface electrode 53R is disposed at a distance from the first back surface electrode 51R. The third back surface electrode 53R is disposed at a distance from the first back surface electrode 51R in the X direction in a plan view. The third back surface electrode 53R is disposed closer to the second substrate side surface 24 than the center in the X direction of the substrate back surface 22 in a plan view. The third back surface electrode 53R is disposed closer to the third substrate side surface 25 than the center in the Y direction of the substrate back surface 22 in a plan view. In one example, the third back surface electrode 53R is formed in a rectangular shape in which the length in the Y direction is shorter than the length in the X direction in a plan view. In one example, the third back surface electrode 53R is formed to have the same size as the third surface electrode 53S shown in FIG. 1. The position and shape of the third back surface electrode 53R on the substrate back surface 22 can be changed arbitrarily.

[0023] The fourth back surface electrode 54R is disposed at a distance from the third back surface electrode 53R. The fourth back surface electrode 54R is disposed at a distance from the third back surface electrode 53R in the Y direction in a plan view. The fourth back surface electrode 54R is disposed closer to the second substrate side surface 24 than the center in the X direction of the substrate back surface 22 in a plan view. The fourth back surface electrode 54R is disposed closer to the fourth substrate side surface 26 than the center in the Y direction of the substrate back surface 22 in a plan view. In one example, the fourth back surface electrode 54R is formed in a rectangular shape whose length in the Y direction is shorter than its length in the X direction in a plan view. In one example, the fourth back surface electrode 54R is formed to have the same size as the fourth surface electrode 54S shown in FIG. 1. The position and shape of the fourth back surface electrode 54R on the substrate back surface 22 can be changed arbitrarily.

[0024] 1 to 3, the semiconductor light emitting device 10 includes first to fourth vias 51V to 54V provided in a substrate 20. The first to fourth vias 51V to 54V are indicated by dashed lines in Fig. 1 and Fig. 3. The first to fourth vias 51V to 54V may be formed of a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0025] The first to fourth vias 51V to 54V penetrate the substrate 20 in the Z direction. The first via 51V electrically connects the first front surface electrode 51S and the first back surface electrode 51R. The second via 52V electrically connects the second front surface electrode 52S and the second back surface electrode 52R. The third via 53V electrically connects the third front surface electrode 53S and the third back surface electrode 53R. The fourth via 54V electrically connects the fourth front surface electrode 54S and the fourth back surface electrode 54R. The number of each of the first to fourth vias 51V to 54V can be changed as appropriate.

[0026] (Light emitting submount) 1 and 2, the light emitting submount 60 is formed in a rectangular flat plate shape with the thickness direction being in the Z direction. The light emitting submount 60 is formed of, for example, a conductive material. For example, Cu, Al, etc. are used as the conductive material. In one example, the light emitting submount 60 is formed of Cu.

[0027] Light emitting submount 60 includes opposite facing submount front surface 61 and submount back surface 62. Submount front surface 61 faces the same side as substrate front surface 21 of substrate 20, and submount back surface 62 faces the same side as substrate back surface 22 of substrate 20.

[0028] The light emitting submount 60 is electrically connected to the third surface electrode 53S by a conductive bonding material 91. The conductive bonding material 91 is in contact with the submount rear surface 62. In a plan view, the X-direction dimension of the light emitting submount 60 is smaller than the X-direction dimension of the third surface electrode 53S, and the Y-direction dimension of the light emitting submount 60 is smaller than the Y-direction dimension of the third surface electrode 53S. The conductive bonding material 91 may be, for example, a solder paste, a silver paste, a gold paste, a copper paste, or the like.

[0029] (Edge-emitting device) The edge light emitting elements 30 are arranged at a distance from the light receiving elements 40 in the X direction. In one example, the edge light emitting elements 30 are arranged at a position overlapping the light receiving elements 40 when viewed from the X direction. The edge light emitting elements 30 are arranged closer to the second substrate side surface 24 than the light receiving elements 40.

[0030] The edge light emitting element 30 is a laser diode that emits laser light in a predetermined wavelength band, and functions as a light source for the semiconductor light emitting device 10. For example, an edge emitting laser (EEL: Edge Emitting Laser) is used as the edge light emitting element 30. The wavelength band of this laser light may be the visible light band, or may be a long wavelength band with a longer wavelength than visible light such as ultraviolet light.

[0031] The end surface light emitting element 30 is formed in a rectangular parallelepiped shape. In one example, the end surface light emitting element 30 is formed in a rectangular shape in which the length in the Y direction is shorter than the length in the X direction in a plan view. The shape of the end surface light emitting element 30 in a plan view can be arbitrarily changed. In one example, the shape of the end surface light emitting element 30 in a plan view may be a square shape. In this specification, the "rectangular parallelepiped shape" includes a shape in which the corners and ridges are chamfered, a shape in which the corners and ridges are rounded, and a shape in which a recess is formed in part or all of the corners and ridges. In addition, each surface may have unevenness formed in part or all of the surfaces. In addition, in the "rectangular parallelepiped shape", the surfaces facing opposite to each other do not necessarily need to be completely parallel to each other, and may have some inclination.

[0032] As shown in FIG. 1 and FIG. 2, the edge light emitting element 30 includes a light emitting element front surface 31 and a light emitting element back surface 32 facing opposite sides to each other in the Z direction, a first element end surface 33 and a second element end surface 34 facing opposite sides to each other in the X direction, and element side surfaces 35, 36 facing opposite sides to each other in the Y direction. The first element end surface 33 and the second element end surface 34 constituting both end surfaces in the X direction are formed by flat surfaces perpendicular to the light emitting element front surface 31 (light emitting element back surface 32). The first element end surface 33 and the second element end surface 34 face opposite sides to each other. The semiconductor light emitting device 10 is configured to emit a first laser light L1 from the first element end surface 33 in the X direction, which is an example of a first direction (X direction) intersecting with the Z direction in a plan view. The semiconductor light emitting device 10 is also configured to emit a second laser light L2 from the second element end surface 34 in a direction opposite to the emission direction of the first laser light L1.

[0033] The edge light emitting element 30 includes a first light emitting electrode 37 formed on the light emitting element front surface 31 and a second light emitting electrode 38 formed on the light emitting element rear surface 32. As shown in FIG. 1, the first light emitting electrode 37 is formed at approximately the center in the Y direction of the light emitting element front surface 31 in a plan view. The shape of the first light emitting electrode 37 in a plan view is a rectangle whose length in the Y direction is shorter than its length in the X direction. As shown in FIG. 2, the second light emitting electrode 38 is formed, for example, with the same length in the X direction of the light emitting element rear surface 32. In one example, the first light emitting electrode 37 may form an anode, and the second light emitting electrode 38 may form a cathode. The first light emitting electrode 37 and the second light emitting electrode 38 may be configured by a laminated structure of a plurality of conductive films.

[0034] The edge light emitting device 30 has a semiconductor laminate structure composed of a plurality of semiconductor layers including a light emitting layer. The light emitting layer is composed of, for example, one or more active layers. The light emitting layer extends in the X direction. The edge light emitting device 30 is configured to emit laser light generated in the light emitting layer by power supplied by the first light emitting electrode 37 and the second light emitting electrode 38 from the first element end face 33 and the second element end face 34. It can be said that the first element end face 33 and the second element end face 34 have emission regions 33A and 34A that emit laser light. In FIG. 2, the emission regions 33A and 34A of the first element end face 33 and the second element end face 34 are clearly shown. In one example, the emission regions 33A and 34A are located closer to the light emitting element surface 31 than the center in the thickness direction.

[0035] The edge light emitting element 30 is disposed on the light emitting submount 60. The edge light emitting element 30 is bonded to the light emitting submount 60 by a conductive adhesive 91. In one example, the edge light emitting element 30 is disposed with the second light emitting electrode 38 facing the submount surface 61 of the light emitting submount 60. The second light emitting electrode 38 of the edge light emitting element 30 is electrically connected to the light emitting submount 60 by the conductive adhesive 91. This conductive adhesive 91 is in contact with the submount surface 61.

[0036] As shown in FIG. 1, the edge light emitting element 30 is electrically connected to the fourth surface electrode 54S. The first light emitting electrode 37 of the edge light emitting element 30 is electrically connected to the fourth surface electrode 54S by a wire W1. The wire W1 corresponds to a "second wire". In one example, the first light emitting electrode 37 may be electrically connected to the fourth surface electrode 54S by a plurality of wires W1. In one example, the first end of the wire W1 is electrically connected to the first light emitting electrode 37, and the second end of the wire W1 is electrically connected to the fourth surface electrode 54S. Note that the first end of the wire W1 may be electrically connected to the fourth surface electrode 54S, and the second end of the wire may be electrically connected to the first light emitting electrode. The wire W1 is, for example, a bonding wire formed by a wire bonding device, and is formed of a conductive material such as Au, Al, or Cu.

[0037] (Photo-receiving submount) The semiconductor light emitting device 10 includes a light-receiving submount 70 disposed on the substrate surface 21 of the substrate 20. In one example, the light-receiving submount 70 is disposed on the first surface electrode 51S.

[0038] In one example, the light-receiving submount 70 is formed in a rectangular plate shape. The light-receiving submount 70 is formed in a rectangular shape when viewed from the Y direction. In one example, the light-receiving submount 70 is formed in a parallelogram shape when viewed from the Y direction.

[0039] The light-receiving submount 70 includes a mounting surface 71 and a mounting back surface 72 that face opposite each other in the thickness direction of the light-receiving submount 70, a mounting surface 73 and a top surface 74 that face opposite each other in the Z direction, and side surfaces 75, 76 that face opposite each other in the Y direction. In one example, the mounting surface 71, the mounting back surface 72, the mounting surface 73, and the top surface 74 are formed in a rectangular shape, and the side surfaces 75, 76 are formed in a parallelogram shape. The light-receiving submount 70 is disposed with the mounting surface 73 facing the substrate front surface 21 of the substrate 20.

[0040] 1, the light-receiving submount 70 is disposed so as to straddle the first surface electrode 51S and the second surface electrode 52S. The light-receiving submount 70 is disposed so that the mounting surface 71 faces the second element end surface 34 of the edge light emitting element 30. In one example, the light-receiving submount 70 is bonded to the first surface electrode 51S and the second surface electrode 52S by an adhesive 92. In one example, the adhesive 92 may include an insulating resin material such as an epoxy resin.

[0041] 1, 2, and 4, a first mounting electrode 77 and a second mounting electrode 78 are formed on the mounting surface 71. In one example, the first mounting electrode 77 and the second mounting electrode 78 are formed in a rectangular shape when viewed from a direction perpendicular to the mounting surface 71. In one example, the first mounting electrode 77 and the second mounting electrode 78 are formed on the mounting surface 71 so as to extend from an end portion on the mounting surface 73 side to an end portion on the upper surface 74 side. The first mounting electrode 77 and the second mounting electrode 78 may be formed of a material including one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.

[0042] The first mounting electrode 77 is electrically connected to the first surface electrode 51S by a conductive bonding material 93. The second mounting electrode 78 is electrically connected to the second surface electrode 52S by a conductive bonding material 93. The conductive bonding material 93 may be, for example, a Pb (lead)-free solder such as a Sn (tin)-Ag-Cu based solder.

[0043] The mounting surface 71 of the optical-receiving submount 70 may be aligned along a direction intersecting the substrate surface 21 when viewed from the Y direction. Angle A1 of the mounting surface 71 with respect to the substrate surface 21 may be determined by the angle between the mounting surface 71 of the optical-receiving submount 70 and a mounting surface 73 facing the substrate surface 21. The angle A1 between the mounting surface 71 and the mounting surface 73 may be referred to as the inclination angle A1 of the mounting surface 71. The inclination angle A1 may be equal to or greater than 60 degrees and equal to or less than 90 degrees.

[0044] The light-receiving submount 70 of the first embodiment is formed such that, in the X direction, the mounting surface 71 becomes more distant from the second element end surface 34 as it becomes farther away from the substrate surface 21. The inclination angle A1 of the light-receiving submount 70 of the first embodiment may be equal to or greater than 60 degrees and less than 90 degrees.

[0045] (Photodetector) 1, 2, and 4, the light-receiving element 40 is mounted on a light-receiving submount 70. The light-receiving element 40 is mounted on a mounting surface 71 of the light-receiving submount 70.

[0046] 1 and 2, the light receiving element 40 is formed in a rectangular flat plate shape. The light receiving element 40 includes a light receiving element front surface 41 and a light receiving element back surface 42 that face in opposite directions in the thickness direction.

[0047] The light receiving element 40 is, for example, a photodiode (PD). The light receiving element 40 includes a light receiving portion 43. The light receiving portion 43 is formed on a light receiving element surface 41. The formation range of the light receiving portion 43 is defined, for example, by a p-type well region formed on an n-type semiconductor substrate provided on the light receiving element 40. The light receiving element 40 further includes a first light receiving electrode 44 and a second light receiving electrode 45. As shown in FIG. 1 and FIG. 2, the first light receiving electrode 44 is formed on the light receiving element surface 41. In addition, the second light receiving electrode 45 is formed on the light receiving element rear surface 42. The first light receiving electrode 44 constitutes one of the anode and the cathode of the photodiode, and the second light receiving electrode 45 constitutes the other of the anode and the cathode of the photodiode. In the first embodiment, the first light receiving electrode 44 constitutes the anode, and the second light receiving electrode 45 constitutes the cathode. The light receiving element 40 is configured so that a current flows from the first light receiving electrode 44 to the second light receiving electrode 45 of the light receiving element 40 in accordance with the amount of light irradiated to the light receiving portion 43 .

[0048] The light-receiving element 40 is bonded to a first mounting electrode 77 provided on the mounting surface 71 of the light-receiving submount 70. The light-receiving element 40 is disposed with the second light-receiving electrode 45 facing the first mounting electrode 77. The second light-receiving electrode 45 is electrically connected to the first mounting electrode 77 by a conductive bonding material 91.

[0049] The first light-receiving electrode 44 of the light-receiving element 40 is electrically connected to the second mounting electrode 78 by a wire W2. The wire W2 corresponds to a "first wire." In one example, a first end of the wire W2 is electrically connected to the first light-receiving electrode 44, and a second end of the wire W2 is electrically connected to the second mounting electrode 78. Note that the first end of the wire W2 may be electrically connected to the first light-receiving electrode 44, and the second end of the wire W2 may be electrically connected to the second mounting electrode 78. The wire W2 is, for example, a bonding wire formed by a wire bonding device, and is formed of a conductive material such as Au, Al, or Cu.

[0050] The light receiving portion 43 of the light receiving element 40 mounted on the light receiving submount 70 faces the same direction as the mounting surface 71 of the light receiving submount 70. The mounting surface 71 faces the second element end face 34 of the edge light emitting element 30. Therefore, the light receiving portion 43 of the light receiving element 40 faces the second element end face 34 of the edge light emitting element 30. The mounting surface 71 of the light receiving submount 70 is formed so as to move away from the second element end face 34 in the Z direction as it moves away from the substrate surface 21. Therefore, it can be said that the light receiving element 40 is disposed so that the light receiving element surface 41 moves away from the second element end face 34 in the Z direction as it moves away from the substrate surface 21.

[0051] The light-receiving submount 70 is disposed such that the light-receiving element surface 41 of the light-receiving element 40 mounted on the light-receiving submount 70 is spaced apart in the X direction from the second element end face 34 of the edge light-emitting element 30. A distance D1 between the second element end face 34 of the edge light-emitting element 30 and the light-receiving element surface 41 of the light-receiving element 40 is preferably 0.5 mm or more and 2.6 mm or less. Distance D1 may be the distance in the X direction between a position on the light-receiving element surface 41 of the light-receiving element 40 that is the same as the position of the emission region 34A of the second element end face 34 in the Z direction, and the second element end face 34 of the edge light-emitting element 30.

[0052] (Cover material) 1, 2, and 4, the semiconductor light emitting device 10 includes a cover member 80. The cover member 80 accommodates at least a portion of the edge light emitting element 30 and at least a portion of the light receiving element 40. The cover member 80 shown in FIG. 2 accommodates the entire edge light emitting element 30 and the entire light receiving element 40.

[0053] The cover member 80 is provided on the substrate 20. The cover member is attached to the substrate surface 21 of the substrate 20 by, for example, an adhesive. The semiconductor light emitting device 10 includes a sealed space 88 formed between the inner surface of the cover member and the substrate surface 21 of the substrate 20. The edge light emitting element 30 and the light receiving element 40 can be said to be disposed in the sealed space 88.

[0054] The cover member 80 is formed in a box shape that opens toward the substrate 20 . The cover member 80 includes a main body 81. The main body 81 has an opening 82 through which the laser light emitted from the first element end surface 33 of the end surface light emitting element 30 passes. The main body 81 includes side walls 83, 84 extending along the third and fourth substrate side surfaces 25, 26 of the substrate 20, a side wall 85 extending along the first substrate side surface 23 of the substrate 20, and an upper wall 86 covering the end surface light emitting element 30 and the light receiving element 40 in the Z direction. The side walls 83, 84, 85 are formed in a flat plate shape extending along the substrate side surfaces 25, 26, 23. The upper wall 86 is formed in a flat plate shape perpendicular to the Z direction.

[0055] The cover member 80 may include a window member 87 that closes the opening 82 of the main body portion 81. The window member 87 is formed to extend along the substrate side surface 24 of the substrate 20. The window member 87 is formed in a flat plate shape extending along the substrate side surface 24.

[0056] The main body 81 may be formed of a material that is translucent to the laser light emitted from the end surface light emitting element 30. The main body 81 may be formed of a glass material or a resin material such as a silicone resin, an epoxy resin, or an acrylic resin. The main body 81 may be formed of a material that is light blocking to the laser light emitted from the end surface light emitting element 30. The main body 81 may be formed of a material containing a metal material or ceramics.

[0057] The window member 87 may be formed of a material that is translucent to the laser light emitted from the end surface light emitting element 30. The main body 81 may be formed of a glass material or a resin material such as a silicone resin, an epoxy resin, or an acrylic resin. The window member 87 may be omitted. By omitting the window member 87, a lens or the like for focusing the first laser light L1 emitted from the first element end face 33 can be arranged close to the first element end face 33.

[0058] (action) The operation of the semiconductor light emitting device 10 of the first embodiment will be described. The optical output of the edge light emitting element 30 varies depending on the temperature, etc. In one example, the optical output of the edge light emitting element 30 decreases as the temperature of the edge light emitting element 30 increases. In a system using laser light, it is required that the optical output be constant.

[0059] The output of the first laser light L1 emitted from the first element end face 33 of the end surface light emitting element 30 and the output of the second laser light L2 emitted from the second element end face 34 have a correlation. The ratio of the optical output of the first laser light L1 to the second laser light L2 may be set to 9:1, for example. In the semiconductor light emitting device 10, the second laser light L2 emitted from the second element end face 34 of the end surface light emitting element 30 is received by the light receiving element 40, and the output current of the light receiving element 40 is kept constant, that is, the drive current of the end surface light emitting element 30 is controlled so that the second laser light L2 is kept constant, so-called APC (Auto Power Control) drive is performed. This allows the first laser light L1 to have a constant output. It is also possible to grasp the output of the first laser light L1 from the output signal of the light receiving element 40 and then control the drive current of the end surface light emitting element 30 so that the output of the first laser light L1 is a predetermined value.

[0060] The light receiving element 40 is mounted on a light receiving submount 70 including a mounting surface 71 facing the first element end face 33 of the edge light emitting element 30. Therefore, the light receiving element surface 41 including the light receiving portion 43 of the light receiving element 40 faces the second element end face 34 of the edge light emitting element 30. This allows the light receiving element 40 to directly receive the second laser light L2 from the second element end face 34 of the edge light emitting element 30. Therefore, the semiconductor light emitting device 10 in which the edge light emitting element 30 and the light receiving element 40 are provided on the substrate surface 21 of the substrate 20 can easily receive the second laser light L2 from the edge light emitting element 30 at the light receiving portion 43 of the light receiving element 40.

[0061] The first laser light L1 and the second laser light L2 emitted from the end surface light emitting element 30 have a spread from the emission regions 33A and 34A. The light intensity of the first laser light L1 decreases from an auxiliary straight line (the optical axis of the first laser light L1) that passes through the emission region 33A and is perpendicular to the first element end surface 33 toward the periphery. In one example, at a position at an angle of 30 degrees with respect to the optical axis, the amount of light is 1 / 10 or less. The light intensity of the second laser light L2 has a distribution similar to that of the light intensity of the first laser light. In contrast, the distance D1 from the second element end surface 34 of the end surface light emitting element 30 to the light receiving element surface 41 of the light receiving element 40 is preferably 0.5 mm or more and 2.6 mm or less. By setting the distance D1 in this manner, the second laser light L2 of the end surface light emitting element 30 can be efficiently received without increasing the size of the light receiving element 40.

[0062] Increasing the size of the light receiving element 40 increases the height of the cover member 80 that houses the end surface light emitting element 30 and the light receiving element 40. In other words, the size of the light receiving element 40 affects the size of the semiconductor light emitting device 10 in the Z direction. Therefore, by arranging the light receiving element 40 at the distance D1 as described above, it is possible to prevent the semiconductor light emitting device 10 from becoming large.

[0063] The mounting surface 71 of the light-receiving submount 70 is formed so as to move away from the second element end surface 34 in the Z direction as it moves away from the substrate surface 21. The angle A1 of the mounting surface 71 with respect to the substrate surface 21 may be determined by the angle A1 between the mounting surface 71 of the light-receiving submount 70 and a mounting surface 73 facing the substrate surface 21. The angle A1 between the mounting surface 71 and the mounting surface 73 may be referred to as the inclination angle A1 of the mounting surface 71. The inclination angle A1 may be greater than or equal to 60 degrees and less than or equal to 90 degrees.

[0064] The semiconductor light emitting device 10 includes first to fourth back surface electrodes 51R to 54R on the substrate back surface 22 of the substrate 20. The first back surface electrode 51R and the second back surface electrode 52R are electrically connected to the light receiving element 40. The third back surface electrode 53R and the fourth back surface electrode 54R are electrically connected to the edge light emitting element 30. Therefore, the semiconductor light emitting device 10 is mounted with the substrate back surface 22 facing the front surface of a circuit board on which a drive circuit for the edge light emitting element 30 and the like are formed. In this manner, the semiconductor light emitting device 10 is configured as a surface mount type package structure.

[0065] The semiconductor light emitting device 10 includes an end surface light emitting element 30 configured to emit a first laser light L1 and a second laser light L2, and a light receiving element 40 that receives the second laser light L2 emitted from a second element end surface 34 of the end surface light emitting element 30. In one example, an output signal (output current) of the light receiving element 40 can be used for so-called APC driving. In addition, the output signal (output current) of the light receiving element 40 can be used to check the operation of the end surface light emitting element 30.

[0066] The semiconductor light emitting device 10 can use so-called APC driving, which controls the current supplied to the end surface light emitting element 30 so that the optical output of the first laser light L1 and the second laser light L2 of the end surface light emitting element 30 is constant. More specifically, a control device provided outside the semiconductor light emitting device 10 and controlling the current supplied to the end surface light emitting element 30 receives a signal corresponding to the second laser light L2 of the end surface light emitting element 30 received by the light receiving element 40. In one example, the signal of the light receiving element 40 is output to the control device via the third back surface electrode 53R. The control device receives the signal of the light receiving element 40 by being electrically connected to the third back surface electrode 53R. Then, the control device controls the current supplied to the end surface light emitting element 30 according to the difference between the received signal and the output setting value that becomes the preset optical output. In one example, the control device controls the current supplied to the end surface light emitting element 30 so that the level of the received signal matches the output setting value.

[0067] (effect) The semiconductor light emitting device 10 of the first embodiment provides the following advantages. (1-1) A semiconductor light emitting device 10 includes a substrate 20 including a substrate surface 21; an end surface light emitting element 30 mounted on the substrate surface 21 and including a first element end surface 33 facing an X direction intersecting the Z direction with respect to the substrate surface 21 and a second element end surface 34 facing the opposite direction to the first element end surface 33, and configured so that light is emitted from the first element end surface 33 and the second element end surface 34; a light-receiving submount 70 provided on the substrate surface 21 and having a mounting surface 71 facing the second element end surface 34; and a light-receiving element 40 mounted on the mounting surface 71 and including a light-receiving portion 43 provided on a light-receiving element surface 41 facing the second element end surface 34.

[0068] The light receiving element 40 of the semiconductor light emitting device 10 is mounted on a light receiving submount 70 including a mounting surface 71 facing the first element end face 33 of the edge light emitting element 30. Therefore, the light receiving element surface 41 including the light receiving portion 43 of the light receiving element 40 faces the second element end face 34 of the edge light emitting element 30. This allows the light receiving element 40 to directly receive the second laser light L2 from the second element end face 34 of the edge light emitting element 30. Therefore, the semiconductor light emitting device 10 in which the edge light emitting element 30 and the light receiving element 40 are provided on the substrate surface 21 of the substrate 20 can easily receive the second laser light L2 from the edge light emitting element 30 at the light receiving portion 43 of the light receiving element 40.

[0069] (1-2) The light-receiving submount 70 includes a first mounting electrode 77 and a second mounting electrode 78. The light-receiving element 40 is electrically connected to the first mounting electrode 77. The first light-receiving electrode 44 of the light-receiving element 40 is electrically connected to the second mounting electrode 78 via a wire W2. Therefore, by mounting the light-receiving element 40 on the light-receiving submount 70, the light-receiving submount 70 and the light-receiving element 40 can be easily mounted on the substrate 20.

[0070] (1-3) The mounting surface 71 of the light-receiving submount 70 is formed so as to move away from the second element end surface 34 in the Z direction as it moves away from the substrate surface 21. The angle A1 of the mounting surface 71 with respect to the substrate surface 21 may be determined by the angle A1 between the mounting surface 71 of the light-receiving submount 70 and the mounting surface 73 facing the substrate surface 21. The angle A1 between the mounting surface 71 and the mounting surface 73 may be referred to as the inclination angle A1 of the mounting surface 71. The inclination angle A1 may be equal to or greater than 60 degrees and equal to or less than 90 degrees. With this configuration, the light-receiving element 40 can efficiently receive the second laser light L2 from the end surface light-emitting element 30.

[0071] (1-4) The semiconductor light emitting device 10 includes a first surface electrode 51S disposed on the substrate surface 21 of the substrate 20, and the light-receiving submount 70 is disposed on the first surface electrode 51S. With this configuration, the first mounting electrode 77 of the light-receiving submount 70 can be easily connected to the first surface electrode 51S.

[0072] (1-5) The semiconductor light emitting device 10 includes a first surface electrode 51S disposed on the substrate surface 21 of the substrate 20, and a second surface electrode 52S disposed at a distance from the first surface electrode 51S in the Y direction. The light-receiving submount 70 is disposed to straddle the first surface electrode 51S and the second surface electrode 52S. With this configuration, the first mounting electrode 77 and the second mounting electrode 78 of the light-receiving submount 70 can be easily connected to the first surface electrode 51S and the second surface electrode 52S.

[0073] (1-6) The semiconductor light emitting device 10 includes a first surface electrode 51S formed on the substrate surface 21 of the substrate 20, and the light-receiving submount 70 is disposed on the first surface electrode 51S. With this configuration, the position of the light-receiving submount 70 can be easily changed. Therefore, the distance D1 between the light-receiving element 40 and the edge light emitting element 30 mounted on the light-receiving submount 70 can be easily changed.

[0074] (1-7) The distance D1 from the second element end surface 34 of the edge light emitting element 30 to the light receiving element surface 41 of the light receiving element 40 is preferably 0.5 mm or more and 2.6 mm or less. By setting the distance D1 in this manner, the second laser light L2 of the edge light emitting element 30 can be efficiently received without increasing the size of the light receiving element 40.

[0075] (1-8) When the light receiving element 40 is made larger, the height of the end surface light emitting element 30 and the cover member 80 that houses the light receiving element 40 increases. In other words, the size of the light receiving element 40 affects the size of the semiconductor light emitting device 10 in the Z direction. It is preferable that the distance D1 from the second element end surface 34 of the end surface light emitting element 30 to the light receiving element surface 41 of the light receiving element 40 is 0.5 mm or more and 2.6 mm or less. By arranging the light receiving element 40 at such a distance D1, it is possible to prevent the semiconductor light emitting device 10 from becoming large.

[0076] (1-9) The semiconductor light emitting device 10 includes first to fourth back surface electrodes 51R to 54R on the substrate back surface 22 of the substrate 20. The first back surface electrode 51R and the second back surface electrode 52R are electrically connected to the light receiving element 40. The third back surface electrode 53R and the fourth back surface electrode 54R are electrically connected to the edge light emitting element 30. Therefore, the semiconductor light emitting device 10 is mounted with the substrate back surface 22 facing the front surface of a circuit board on which a drive circuit for the edge light emitting element 30 and the like are formed. In this manner, the semiconductor light emitting device 10 is configured as a surface mount type package structure. This allows the semiconductor light emitting device 10 to be easily mounted.

[0077] (1-10) The light-receiving submount 70 includes a back mounting surface 72 that faces the opposite side to a mounting surface 71 on which the light-receiving element 40 is mounted. By placing the back mounting surface 72 on a workbench, the light-receiving element 40 can be easily mounted on the mounting surface 71.

[0078] Second embodiment A semiconductor light emitting device 10A of the second embodiment will be described with reference to Figures 5 and 6. The semiconductor light emitting device 10A of the second embodiment is different from the semiconductor light emitting device 10 of the first embodiment in the shape of the light-receiving submount 170. Differences from the semiconductor light emitting device 10 of the first embodiment will be described in detail below. Components common to the semiconductor light emitting device 10 of the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0079] Fig. 5 is a schematic plan view of a semiconductor light emitting device 10A according to the second embodiment, and Fig. 6 is a schematic cross-sectional view of the semiconductor light emitting device 10A taken along line 6-6 in Fig. 5. 5 and 6, the semiconductor light emitting device 10A includes a light-receiving submount 170 disposed on the substrate surface 21 of the substrate 20. In one example, the light-receiving submount 170 is disposed on the first surface electrode 51S. In one example, the light-receiving submount 170 is disposed so as to straddle the first surface electrode 51S and the second surface electrode 52S.

[0080] The light-receiving submount 170 is formed in a triangular shape when viewed from the Y direction. The light-receiving submount 170 includes a mounting surface 73 facing the substrate front surface 21, a mounting surface 71 facing the second element end surface 34 of the end surface light-emitting element 30, a mounting back surface 72 facing the opposite side to the mounting surface 71, and side surfaces 75, 76 facing opposite sides in the Y direction. In one example, the mounting surface 71, the mounting back surface 72, and the mounting surface 73 are formed in a rectangular shape, and the side surfaces 75, 76 are formed in a triangular shape. In one example, the side surfaces 75, 76 are formed in a right-angled triangle with the mounting surface 71 side as the hypotenuse.

[0081] (effect) The semiconductor light emitting device 10A of the second embodiment has the following advantages. (2-1) The same effects as those (1-1) to (1-9) of the semiconductor light emitting device 10 of the first embodiment are achieved.

[0082] (2-2) The light-receiving submount 170 is formed in a triangular shape when viewed from the Y direction. Therefore, the light-receiving submount 170 can be disposed close to the side wall 85 of the cover member 80.

[0083] (2-3) The side wall 85 of the cover member 80 can be brought closer to the first surface electrode 51S and the second surface electrode 52S on which the light-receiving submount 170 is mounted. This makes it possible to reduce the size of the semiconductor light emitting device 10A in the X direction.

[0084] Third embodiment A semiconductor light emitting device 10B of the third embodiment will be described with reference to Figs. 7 to 10. The semiconductor light emitting device 10B of the third embodiment is different from the semiconductor light emitting device 10 of the first embodiment in the shape of the light-receiving submount 270. Differences from the semiconductor light emitting device 10 of the first embodiment will be described in detail below. Components common to the semiconductor light emitting device 10 of the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0085] Fig. 7 is a schematic plan view of a semiconductor light emitting device 10B according to a third embodiment. Fig. 8 is a schematic cross-sectional view of the semiconductor light emitting device 10B taken along line 8-8 in Fig. 7. Fig. 9 is a schematic back view of the semiconductor light emitting device 10B in Fig. 7. Fig. 10 is a schematic cross-sectional view of the semiconductor light emitting device 10B taken along line 10-10 in Fig. 7.

[0086] 7, the semiconductor light emitting device 10B includes a light-receiving submount 270 disposed on the substrate surface 21 of the substrate 20. In one example, the light-receiving submount 270 is disposed on the first surface electrode 51S. In one example, the light-receiving submount 270 is disposed so as to straddle the first surface electrode 51S and the second surface electrode 52S.

[0087] In one example, the light-receiving submount 270 is formed in a rectangular flat plate shape. The light-receiving submount 270 is formed in a rectangular shape when viewed from the Y direction. In one example, the light-receiving submount 270 is formed in a rectangular shape when viewed from the Y direction.

[0088] The light-receiving submount 270 includes a mounting surface 71 and a mounting back surface 72 that face opposite each other in the thickness direction of the light-receiving submount 270, a mounting surface 73 and a top surface 74 that face opposite each other in the Z direction, and side surfaces 75, 76 that face opposite each other in the Y direction. In one example, the mounting surface 71, the mounting back surface 72, the mounting surface 73, the top surface 74, and the side surfaces 75, 76 are formed in a rectangular shape. The light-receiving submount 270 is formed in a rectangular parallelepiped shape. The light-receiving submount 270 is disposed with the mounting surface 73 facing the substrate front surface 21 of the substrate 20.

[0089] The light-receiving submount 270 of the third embodiment is formed so that the mounting surface 71 is perpendicular to the substrate surface 21. That is, the light-receiving submount 270 has a mounting surface 73 and a mounting surface 71 that form an angle of 90 degrees.

[0090] (effect) The semiconductor light emitting device 10B of the third embodiment has the following advantages. (3-1) The same effects as those of the semiconductor light emitting device 10 of the first embodiment are achieved.

[0091] (3-2) The light-receiving submount 270 is formed in a triangular shape when viewed from the Y direction. Therefore, the light-receiving submount 270 can be disposed close to the side wall 85 of the cover member 80.

[0092] (2-3) The side wall 85 of the cover member 80 can be brought closer to the first surface electrode 51S and the second surface electrode 52S on which the light-receiving submount 270 is mounted. This makes it possible to reduce the size of the semiconductor light emitting device 10B in the X direction.

[0093] (Fourth embodiment) A semiconductor light emitting device 10C of the fourth embodiment will be described with reference to Figures 11 and 12. The semiconductor light emitting device 10C of the fourth embodiment differs from the semiconductor light emitting device 10 of the first embodiment in the shapes of the first and second surface electrodes 151S, 152S and the position of the light-receiving submount 70. Differences from the semiconductor light emitting device 10 of the first embodiment will be described in detail below. Also, components common to the semiconductor light emitting device 10 of the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0094] Fig. 11 is a schematic plan view of a semiconductor light emitting device 10C according to the fourth embodiment, and Fig. 12 is a schematic cross-sectional view of the semiconductor light emitting device 10C taken along line 12-12 in Fig. 11. As shown in FIGS. 11 and 12, the semiconductor light emitting device 10C includes a light-receiving submount 70 disposed on the substrate surface 21 of the substrate 20. The light-receiving submount 70 of the fourth embodiment is disposed on a first surface electrode 151S. The light-receiving submount 70 is disposed with a mounting surface 73 facing the substrate surface 21 of the substrate 20. The light-receiving submount 70 is directly bonded to the substrate surface 21 of the substrate 20 by an adhesive 92. It can be said that the light-receiving submount 70 is disposed at a position that does not overlap with the first surface electrode 151S. In other words, in the semiconductor light emitting device 10C of the fourth embodiment, the first surface electrode 151S is not interposed between the substrate 20 and the light-receiving submount 70.

[0095] The first surface electrode 151S is disposed between the light-receiving submount 70 and the third surface electrode 53S. The first surface electrode 151S is formed in a rectangular shape in which the length in the Y direction is longer than the length in the X direction. The first surface electrode 151S is disposed so as to overlap a part of the first back surface electrode 51R provided on the substrate back surface 22 of the substrate 20. The first back surface electrode 51R may be formed to have the same size as the first surface electrode 151S in a plan view.

[0096] The second surface electrode 152S is disposed apart from the first surface electrode 151S in the Y direction with respect to the first surface electrode 151S. It can be said that the second surface electrode 152S is disposed between the light receiving submount 70 and the fourth surface electrode 54S. The second surface electrode 152S is formed in a rectangular shape whose length in the Y direction is longer than its length in the X direction. The second surface electrode 152S is disposed so as to overlap a part of the second back surface electrode 52R provided on the substrate back surface 22 of the substrate 20. The second back surface electrode 52R may be formed to have the same size as the second surface electrode 152S in a plan view.

[0097] The first mounting electrode 77 provided on the mounting surface 71 of the light-receiving submount 70 is electrically connected to the first surface electrode 151S by a conductive bonding material 93. The second mounting electrode 78 provided on the mounting surface 71 of the light-receiving submount 70 is electrically connected to the second surface electrode 152S by a conductive bonding material 93.

[0098] (effect) The semiconductor light emitting device 10C of the fourth embodiment has the following advantages. (4-1) The same effects as those (1-1) to (1-3) and (1-7) to (1-10) in the semiconductor light emitting device 10 of the first embodiment are achieved.

[0099] Fifth embodiment A semiconductor light emitting device 10D of the fifth embodiment will be described with reference to Figs. 13 to 15. The semiconductor light emitting device 10D of the fifth embodiment differs from the semiconductor light emitting device 10B of the third embodiment in that it includes a front common electrode 250S and a rear common electrode 250R. The following describes in detail the differences from the semiconductor light emitting device 10B of the third embodiment. Also, components common to the semiconductor light emitting device 10B of the third embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0100] Fig. 13 is a schematic plan view of a semiconductor light emitting device 10D according to a fifth embodiment. Fig. 14 is a schematic cross-sectional view of the semiconductor light emitting device 10D taken along line 14-14 in Fig. 13. Fig. 15 is a schematic rear view of the semiconductor light emitting device 10D in Fig. 13.

[0101] As shown in FIG. 13 and FIG. 15, the semiconductor light emitting device 10D includes a front surface common electrode 250S provided on the substrate front surface 21 of the substrate 20, and a back surface common electrode 250R provided on the substrate back surface 22 of the substrate 20. The front surface common electrode 250S is formed to extend in the X direction on the substrate front surface 21. The front surface common electrode 250S is disposed closer to the third substrate side surface 25. The front surface common electrode 250S includes a first surface electrode 51S and a third surface electrode 53S. The back surface common electrode 250R is formed to extend in the X direction on the substrate back surface 22. The back surface common electrode 250R is disposed closer to the third substrate side surface 25. The back surface common electrode 250R includes a first back surface electrode 51R and a third back surface electrode 53R.

[0102] Either the front surface common electrode 250S or the rear surface common electrode 250R may be configured as a separated electrode. In one example, the semiconductor light emitting device 10D may include the front surface common electrode 250S, the first rear surface electrode 51R, and the third rear surface electrode 53R. The semiconductor light emitting device 10D may include the first front surface electrode 51S, the third front surface electrode 53S, and the rear surface common electrode 250R. The electrodes that are shared may be the second front surface electrode 52S and the fourth front surface electrode 54S, or the second rear surface electrode 52R and the fourth rear surface electrode 54R.

[0103] (effect) The semiconductor light emitting device 10D of the fifth embodiment has the following advantages. (5-1) The semiconductor device 10B of the third embodiment has the same effects as the semiconductor device 10B of the third embodiment.

[0104] Sixth embodiment A semiconductor light emitting device 10E of the sixth embodiment will be described with reference to Fig. 16 and Fig. 17. The semiconductor light emitting device 10E of the sixth embodiment is different from the semiconductor light emitting device 10 of the first embodiment in the shapes of the substrate 120 and the light-receiving submount 370. Differences from the semiconductor light emitting device 10 of the first embodiment will be described in detail below. Also, components common to the semiconductor light emitting device 10 of the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0105] Fig. 16 is a schematic plan view of a semiconductor light emitting device 10E according to the sixth embodiment, and Fig. 17 is a schematic cross-sectional view of the semiconductor light emitting device 10E taken along line 17-17 in Fig. 16. 16 and 17, the semiconductor light emitting device 10E includes a light-receiving submount 370 provided on the substrate surface 21 of the substrate 120. The light-receiving submount 370 of the sixth embodiment is integrally formed with the substrate 120. The light-receiving submount 370 and the substrate 120 are connected to each other and configured as an integral body. It can be said that the substrate 120 of the sixth embodiment includes the light-receiving submount 370. The light-receiving submount 370 and the substrate 120 may be formed of, for example, a material containing ceramics or a resin material such as an epoxy resin.

[0106] The semiconductor light emitting device 10E includes a first internal wiring 371 and a second internal wiring 372 provided inside the light-receiving submount 370 and the substrate 120. The first internal wiring 371 electrically connects a first mounting electrode 77 provided on the mounting surface 71 of the light-receiving submount 370 to a first back surface electrode 51R provided on the substrate back surface 22 of the substrate 120. The second internal wiring 372 electrically connects a second mounting electrode 78 provided on the mounting surface 71 of the light-receiving submount 370 to a second back surface electrode 52R provided on the substrate back surface 22 of the substrate 120.

[0107] (effect) The semiconductor light emitting device 10E of the sixth embodiment has the following advantages. (6-1) The same effects as those (1-1) to (1-3) and (1-7) to (1-10) in the semiconductor light emitting device 10 of the first embodiment are achieved.

[0108] (6-2) The light-receiving submount 370 and the substrate 120 are connected to each other as a single unit. This makes it possible to prevent the light-receiving submount 370 from peeling off. In addition, it is possible to prevent the edge light-emitting element 30 arranged on the substrate surface 21 of the substrate 120 from being misaligned or from changing the angle of the mounting surface 71.

[0109] (6-3) The first mounting electrode 77 of the light-receiving submount 370 is electrically connected to the first back electrode 51R by a first internal wiring 371. The second mounting electrode 78 of the light-receiving submount 370 is electrically connected to the second back electrode 52R by a second internal wiring 372. This eliminates the need for the adhesive 92 and conductive bonding material 93 shown in FIG. 2. Furthermore, the occurrence of connection defects due to deterioration of the adhesive 92 and conductive bonding material 93 can be suppressed.

[0110] Seventh embodiment A semiconductor light emitting device 10F of the seventh embodiment will be described with reference to Figures 18 and 19. The semiconductor light emitting device 10F of the seventh embodiment is different from the semiconductor light emitting device 10B of the third embodiment in the configuration of the light-receiving submount 470. Differences from the semiconductor light emitting device 10B of the third embodiment will be described in detail below. Components common to the semiconductor light emitting device 10B of the third embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0111] Fig. 18 is a schematic cross-sectional view of a semiconductor light emitting device 10F according to the seventh embodiment. Fig. 19 is a schematic cross-sectional view of the semiconductor light emitting device 10F taken along line 19-19 in Fig. 18. 18 and 19, the semiconductor light emitting device 10F includes a light-receiving submount 470 disposed on the substrate surface 21 of the substrate 20. In one example, the light-receiving submount 470 is disposed on the first surface electrode 51S. In one example, the light-receiving submount 470 is disposed so as to straddle the first surface electrode 51S and the second surface electrode 52S.

[0112] The light-receiving submount 470 includes a first mounting electrode 471 and a second mounting electrode 472 provided on the mounting surface 73. The first mounting electrode 471 and the second mounting electrode 472 are arranged spaced apart from each other in the Y direction. The first mounting electrode 471 is electrically connected to a first mounting electrode 77 on the mounting surface 71. The second mounting electrode 472 is electrically connected to a second mounting electrode 78 on the mounting surface 71.

[0113] The first mounting electrode 471 is electrically connected to the first surface electrode 51S by a conductive bonding material 94. The second mounting electrode 472 is electrically connected to the second surface electrode 52S by a conductive bonding material 94. The conductive bonding material 94 may be made of the same material as the conductive bonding material 91, or may be made of a different material.

[0114] (effect) The semiconductor light emitting device 10F of the seventh embodiment has the following advantages. (7-1) The same effects as those of the semiconductor light emitting device 10B of the third embodiment are achieved.

[0115] (7-2) By mounting the light-receiving submount 470 on the first surface electrode 51S and the second surface electrode 52S, the first mounting electrode 77 and the second mounting electrode 78 can be electrically connected to the first surface electrode 51S and the second surface electrode 52S. This reduces the effort required to mount the light-receiving submount 470.

[0116] Eighth embodiment A semiconductor light emitting device 10G of the eighth embodiment will be described with reference to Figures 20 and 21. The semiconductor light emitting device 10G of the eighth embodiment is different from the semiconductor light emitting device 10B of the third embodiment in the shapes of the light receiving element 140 and the light receiving submount 570. Differences from the semiconductor light emitting device 10B of the third embodiment will be described in detail below. Components common to the semiconductor light emitting device 10B of the third embodiment will be denoted by the same reference numerals, and detailed description thereof will be omitted.

[0117] Fig. 20 is a schematic cross-sectional view of a semiconductor light emitting device 10G according to the eighth embodiment. Fig. 21 is a schematic cross-sectional view of the semiconductor light emitting device 10G taken along line 21-21 in Fig. 20. 20 and 21, the semiconductor light emitting device 10G includes a light-receiving submount 570 disposed on the substrate surface 21 of the substrate 20, and a light-receiving element 140 mounted on the light-receiving submount 570. In one example, the light-receiving submount 570 is disposed on the first surface electrode 51S. In one example, the light-receiving submount 570 is disposed so as to straddle the first surface electrode 51S and the second surface electrode 52S. The light-receiving submount 570 is adhered to the first surface electrode 51S and the second surface electrode 52S by an adhesive 92.

[0118] The light-receiving element 140 is mounted on the mounting surface 71 of the light-receiving submount 570. The light-receiving element 140 includes a first light-receiving electrode 141 and a second light-receiving electrode 142. The first light-receiving electrode 141 and the second light-receiving electrode 142 are provided on the light-receiving element rear surface 42. The light-receiving element 140 is disposed such that the first light-receiving electrode 141 and the second light-receiving electrode 142 face the light-receiving submount 570. The light-receiving element 140 is disposed such that the first light-receiving electrode 141 and the second light-receiving electrode 142 are aligned in the Y direction.

[0119] The light-receiving submount 570 includes a first mounting electrode 571 and a second mounting electrode 572. As shown in Fig. 21, the first mounting electrode 571 is disposed on the mounting surface 71, closer to the side surface 75. The second mounting electrode 572 is disposed adjacent to the first mounting electrode 571 in the Y direction. As shown in Fig. 20, the second mounting electrode 572 is formed to extend to a position on the mounting surface 71 where it overlaps with the second surface electrode 52S.

[0120] The first light-receiving electrode 141 of the light-receiving element 140 is electrically connected to a first mounting electrode 571 of the light-receiving sub-mount 570 by a conductive bonding material 93. The second light-receiving electrode 142 of the light-receiving element 140 is electrically connected to a second mounting electrode 572 of the light-receiving sub-mount 570 by a conductive bonding material 93.

[0121] (effect) The semiconductor light emitting device 10G of the eighth embodiment has the following advantages. (8-1) The same effects as those of the semiconductor light emitting device 10B of the third embodiment are achieved.

[0122] (8-2) The light-receiving element 140 includes a first light-receiving electrode 141 and a second light-receiving electrode 142 disposed on the back surface 42 of the light-receiving element. The first light-receiving electrode 141 and the second light-receiving electrode 142 are electrically connected to a first mounting electrode 571 and a second mounting electrode 572 of the light-receiving submount 570 by a conductive bonding material 93. The light-receiving element 140 can be easily mounted on the light-receiving submount 570.

[0123] Ninth embodiment A semiconductor light emitting device 10H of the ninth embodiment will be described with reference to Fig. 22 and Fig. 23. The semiconductor light emitting device 10H of the ninth embodiment differs from the semiconductor light emitting device 10B of the third embodiment in that a light emitting submount 60 is not used. The following describes in detail the differences from the semiconductor light emitting device 10B of the third embodiment. Also, components common to the semiconductor light emitting device 10B of the third embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0124] Fig. 22 is a schematic cross-sectional view of a semiconductor light emitting device 10H according to a ninth embodiment. Fig. 23 is a schematic cross-sectional view of the semiconductor light emitting device 10H taken along line 23-23 in Fig. 22. 22 and 23, the edge light emitting element 30 of the semiconductor light emitting device 10H is disposed on the third surface electrode 53S. The second light emitting electrode 38 provided on the light emitting element rear surface 32 of the edge light emitting element 30 faces the third surface electrode 53S. The second light emitting electrode 38 is electrically connected to the third surface electrode 53S by a conductive bonding material 91. The conductive bonding material 91 contacts the second light emitting electrode 38 and also contacts the third surface electrode 53S.

[0125] 23, the light receiving element 40 may be disposed on the mounting surface 71 closer to the mounting surface 73 of the light receiving submount 270. This makes it possible to increase the amount of the second laser light L2 emitted from the second element end surface 34 of the edge light emitting element 30 that is received.

[0126] (effect) The semiconductor light emitting device 10H of the ninth embodiment has the following advantages. (9-1) It has the same effects as the semiconductor light emitting device 10B of the third embodiment.

[0127] (Example of change) The above embodiment can be modified, for example, as follows. The above embodiment and the following modified examples can be combined with each other as long as no technical contradiction occurs. In the following modified examples, the same reference numerals as in the above embodiment are used for the parts common to the above embodiment, and the description thereof will be omitted.

[0128] FIG. 24 is a cross-sectional view of a semiconductor light-emitting device 10I according to a modified example, and corresponds to the cross-sectional view of the semiconductor light-emitting device 10 of the first embodiment shown in FIG. The semiconductor light emitting device 10I of the modified example includes a cover member 180. This cover member 180 includes a main body portion 81 and a window member 87. The window member 87 is an integrated part formed integrally with the main body portion 81. This cover member 180 can accommodate the edge light emitting element 30, the light receiving element 40, etc.

[0129] FIG. 25 is a cross-sectional view of a semiconductor light-emitting device 10J according to a modified example, and corresponds to the cross-sectional view of the semiconductor light-emitting device 10 of the first embodiment shown in FIG. The semiconductor light emitting device 10J of the modified example includes a first light receiving submount 671 and a second light receiving submount 672. The first light receiving submount 671 is disposed on the first surface electrode 51S. The first light receiving submount 671 includes a first mounting electrode 77, and a light receiving element 40 is mounted on the first light receiving submount 671. The second light receiving submount 672 is disposed on the second surface electrode 52S. The second light receiving submount 672 includes a second mounting electrode 78. The wire W2 connected to the first light receiving electrode 44 of the light receiving element 40 is connected to the second mounting electrode 78 of the second light receiving submount 672.

[0130] Fig. 26 is a schematic plan view of a semiconductor light emitting device 10K according to a modified example, and Fig. 27 is a schematic cross-sectional view of the semiconductor light emitting device 10K taken along line 27-27 in Fig. 26. The semiconductor light emitting device 10K of the modified example includes a sealing member 280 that seals the edge light emitting element 30 and the light receiving element 40. The sealing member 280 may seal at least a part of the light receiving element 40 and at least a part of the edge light emitting element 30.

[0131] As shown in FIG. 27, the sealing member 280 is provided on the substrate 20. The sealing member 280 is formed of a material that is transmissive to the first laser light L1 and the second laser light L2 of the edge light emitting element 30. The sealing member 280 may be formed of a material that includes at least one of silicone resin, epoxy resin, and acrylic resin, for example. In one example, the sealing member 280 is formed of silicone resin. In the semiconductor light emitting device 10K of the modified example, the sealing member 280 seals the entire light receiving element 40 and the entire edge light emitting element 30.

[0132] The sealing member 280 is formed in a substantially rectangular flat plate shape with the thickness direction being the Z direction. The sealing member 280 includes a sealing surface 281 facing the same side as the substrate surface 21, and first to fourth sealing side surfaces 282 to 285 intersecting with the sealing surface 281. The sealing surface 281 is a flat surface perpendicular to the thickness direction (Z direction) of the substrate 20. The first to fourth sealing side surfaces 282 to 285 are, for example, perpendicular to the sealing surface 281. The first sealing side surface 282 and the second sealing side surface 283 constitute both end surfaces of the sealing member 280 in the X direction, and the third sealing side surface 284 and the fourth sealing side surface 285 constitute both end surfaces of the sealing member 280 in the Y direction. The first sealing side surface 282 faces the same side as the first substrate side surface 23, and the second sealing side surface 283 faces the same side as the second substrate side surface 24. The third sealing side 284 faces the same side as the third substrate side 25, and the fourth sealing side 285 faces the same side as the fourth substrate side 26. In one example, the first sealing side 282 and the first substrate side 23 are formed to be flush with each other. The second sealing side 283 and the second substrate side 24 are formed to be flush with each other. The third sealing side 284 and the third substrate side 25 are formed to be flush with each other. The fourth sealing side 285 and the fourth substrate side 26 are formed to be flush with each other.

[0133] The second sealing side surface 283 of the sealing member 280 faces in the X direction, which is the same direction as the first element end surface 33 of the end surface light emitting element 30. The first laser light L1 of the end surface light emitting element 30 passes through the sealing member 280 and is emitted to the outside from the second sealing side surface 283. In the semiconductor light emitting device 10K of the modified example, the end surface light emitting element 30 and the light receiving element 40 are sealed by the sealing member 280, so that adhesion of foreign matter such as moisture and dust to the end surface light emitting element 30 and the light receiving element 40 can be suppressed.

[0134] Fig. 28 is a schematic plan view of a semiconductor light emitting device 10L according to a modified example, and Fig. 29 is a schematic cross-sectional view of the semiconductor light emitting device 10L taken along line 29-29 in Fig. 28. In the modified semiconductor light emitting device 10L, the sealing member 280 is formed so as to expose the first element end face 33 of the edge light emitting element 30.

[0135] The second sealing side surface 283 of the sealing member 280 is located between the first element end surface 33 and the second element end surface 34 of the edge light emitting element 30 in the X direction. As a result, the first element end surface 33 of the edge light emitting element 30 is exposed from the sealing member 280. On the other hand, the second element end surface 34 of the edge light emitting element 30 is sealed by the sealing member 280. The light receiving element 40 is sealed by the sealing member 280.

[0136] In this modified semiconductor light-emitting device 10L, the first element end face 33 of the end surface light-emitting element 30 is exposed from the sealing member 280, so that an optical system such as a lens for, for example, focusing the first laser light L1 emitted from the first element end face 33 can be positioned close to the first element end face 33.

[0137] Fig. 30 is a schematic plan view of a semiconductor light emitting device 10M according to a modified example, and Fig. 31 is a schematic cross-sectional view of the semiconductor light emitting device 10M taken along line 31-31 in Fig. 30. The semiconductor light emitting device 10M of the modified example includes a sealing member 380. The sealing member 380 includes a cover member 381 and a sealing resin 382. The cover member 381 is configured similarly to the main body portion 81 shown in Fig. 1 and Fig. 2. The sealing resin 382 fills an area surrounded by the cover member 381 and the substrate 20. The sealing resin 382 may be formed of a material including at least one of a silicone resin, an epoxy resin, and an acrylic resin, for example.

[0138] Fig. 32 is a schematic plan view of a semiconductor light emitting device 10N according to a modified example, and Fig. 33 is a schematic cross-sectional view of the semiconductor light emitting device 10N taken along line 33-33 in Fig. 32. The semiconductor light emitting device 10N of the modified example includes a sealing member 480. The sealing member 480 includes a body portion 481 and a sealing resin 482. The body portion 481 is provided on the substrate surface 21, and is formed so as to surround the end surface light emitting element 30, the light receiving element 40, and the light receiving submount 70. The body portion 481 is formed in a frame shape that opens in the direction opposite to the substrate 20 in the Z direction. In one example, the body portion 481 is formed in a frame shape along the substrate side surfaces 23 to 26 of the substrate 20. The body portion 481 may be formed of a material that is translucent to the first laser light L1 emitted from the end surface light emitting element 30. The body portion 481 may be formed of a resin material such as a glass material, a silicone resin, an epoxy resin, or an acrylic resin.

[0139] The sealing resin 482 fills the inside of the main body 481. The sealing resin 482 seals the edge light emitting element 30 and the light receiving element 40. The sealing resin 482 may be made of a material including at least one of a silicone resin, an epoxy resin, and an acrylic resin, for example. The upper surface of the sealing resin 482 may be flush with the upper end surface of the main body 481. The upper surface of the sealing resin 482 may be recessed toward the substrate 20.

[0140] FIG. 34 is a schematic cross-sectional view of a semiconductor light emitting device 10O according to a modified example. The semiconductor light emitting device 10O of the modified example includes a sealing member 280 and a light shielding layer 191 provided on a sealing surface 281 of the sealing member 280. The light shielding layer 191 is formed so as to cover a part of the sealing surface 281. The light shielding layer 191 may be formed so as to cover the light receiving portion 43 of the light receiving element 40 in a plan view. The light shielding layer 191 may further be formed so as to cover a part of the end surface light emitting element 30, including the end surface 34 of the second element. The light shielding layer 191 may be formed, for example, of a resin material having light shielding properties. For example, a black epoxy resin is used as the resin material having light shielding properties. The light shielding layer 191 may be formed, for example, of a metal film. The light shielding layer 191 may be formed, for example, of an anti-reflection coating (AR coating). The shape of the light shielding layer 191 can be changed arbitrarily. The light-shielding layer 191 prevents light from the outside of the semiconductor light-emitting device 10O from entering the light-receiving portion 43 of the light-receiving element 40.

[0141] FIG. 35 is a schematic cross-sectional view of a semiconductor light emitting device 10P according to a modified example. The sealing member 280 of the semiconductor light emitting device 10P of the modified example includes a diffusing material 192. The diffusing material 192 diffuses light inside the sealing member 280 by reflecting (scattering) the light at the interface between the resin in the sealing member 280 and the diffusing material 192. The material of the diffusing material 192 is not particularly limited, and for example, silica or other glass materials can be used. In one example, a spherical silica filler is used as the diffusing material 192. The particle size of the diffusing material 192 is not particularly limited, and for example, a particle size sufficiently small with respect to the wavelengths of the first laser light L1 and the second laser light L2 emitted from the end surface light emitting element 30 is selected so that scattering occurs predominantly.

[0142] The diffusion material 192 is dispersed as fine particles in the sealing member 280. The diffusion material 192 is mixed with the sealing member 280 at a predetermined compounding ratio. In one example, the diffusion material 192 is evenly dispersed in the sealing member 280. The compounding ratio of the diffusion material 192 to the resin of the sealing member 280 is not particularly limited, and may be greater than 0% and less than 100%. The larger the compounding ratio of the diffusion material 192, the easier it is for the light receiving element 40 to receive scattered light, and the directional angle of the first laser light L1 of the end surface light emitting element 30 can be widened. In addition, by limiting the upper limit of the compounding ratio of the diffusion material 192 to a predetermined value, it is possible to suppress a large decrease in the output and radiation intensity of the laser light (first laser light) of the semiconductor light emitting device 10P. In one example, a diffusion material 192 having a smaller thermal expansion coefficient than the resin of the sealing member 280 is selected as the diffusion material 192.

[0143] Tenth embodiment A semiconductor light emitting device 10Q according to a tenth embodiment will be described with reference to FIGS.

[0144] Fig. 36 is a schematic plan view of a semiconductor light emitting device 10Q according to a tenth embodiment. Fig. 37 is a schematic cross-sectional view of the semiconductor light emitting device 10Q taken along line 37-37 in Fig. 36. Fig. 38 is a schematic back view of the semiconductor light emitting device 10Q in Fig. 36.

[0145] (Schematic configuration of a semiconductor light emitting device) 36 to 38, the semiconductor light emitting device 10Q includes a substrate 220, an edge light emitting element 230 arranged on the substrate 220, and a light receiving element 240 arranged on the substrate 220. The semiconductor light emitting device 10Q includes a light receiving submount 770 on which the light receiving element 240 is mounted. The semiconductor light emitting device 10Q may include a light emitting submount 260 on which the edge light emitting element 230 is mounted. The semiconductor light emitting device 10Q may also include a cover member 580 that houses at least a portion of the edge light emitting element 230 and at least a portion of the light receiving element 240.

[0146] (substrate) The substrate 220 is a component that supports the edge light emitting element 230 and the light receiving element 240. The substrate 220 is formed in a rectangular flat plate shape with the Z direction being the thickness direction.

[0147] In a plan view, the substrate 220 is formed in a rectangular shape in which the length in the Y direction is longer than the length in the X direction. The substrate 220 includes a substrate front surface 221, a substrate back surface 222 opposite the substrate front surface 221 in the Z direction, and first to fourth substrate side surfaces 223 to 226 connecting the substrate front surface 221 and the substrate back surface 222. The first substrate side surface 223 and the second substrate side surface 224 form both end surfaces of the substrate 220 in the X direction, and the third substrate side surface 225 and the fourth substrate side surface 226 form both end surfaces of the substrate 220 in the Y direction. The shape of the substrate 220 in a plan view can be changed arbitrarily.

[0148] The substrate 220 is formed of, for example, an insulating material. The substrate 220 may be formed of, for example, a resin material including an epoxy resin. The resin material may include a filler such as glass or ceramics. The substrate 220 may also be formed of, for example, a material including ceramics. Examples of the material including ceramics include aluminum nitride and alumina. The substrate 220 formed of a material including ceramics has high heat dissipation performance and can prevent the temperature of the semiconductor light emitting device 10Q from becoming excessively high.

[0149] (Surface electrode, back electrode) 36 and 37, the semiconductor light emitting device 10Q includes surface electrodes 251S-254S provided on the substrate surface 221. The surface electrodes 251S-254S are formed of a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0150] 36, the first surface electrode 251S is disposed closer to the first substrate side surface 223 than the center in the X direction of the substrate surface 221 in a plan view. The first surface electrode 251S is disposed in the center in the Y direction of the substrate surface 221. In one example, the first surface electrode 251S is formed in a rectangular shape whose length in the Y direction is longer than its length in the X direction in a plan view. The position and shape of the first surface electrode 251S on the substrate surface 221 can be changed arbitrarily.

[0151] The second surface electrode 252S is disposed at a distance from the first surface electrode 251S. The second surface electrode 252S is disposed at a distance from the first surface electrode 251S in the Y direction in a plan view. The second surface electrode 252S is disposed closer to the first substrate side surface 223 than the center in the X direction of the substrate surface 221 in a plan view. The second surface electrode 252S is disposed closer to the fourth substrate side surface 226 than the center in the Y direction of the substrate surface 221. It can be said that the second surface electrode 252S is disposed between the first surface electrode 251S and the fourth substrate side surface 226. In one example, the second surface electrode 252S is formed in a rectangular shape whose length in the Y direction is shorter than its length in the X direction in a plan view. The position and shape of the second surface electrode 252S on the substrate surface 221 can be changed arbitrarily.

[0152] The third surface electrode 253S is disposed at a distance from the first surface electrode 251S. The third surface electrode 253S is disposed at a distance in the X direction from the first surface electrode 251S in a plan view. The third surface electrode 253S is disposed closer to the second substrate side surface 224 than the center of the substrate surface 221 in the X direction in a plan view. The third surface electrode 253S is disposed at the center of the substrate surface 221 in the Y direction. In one example, the third surface electrode 253S is formed in a rectangular shape whose length in the Y direction is shorter than its length in the X direction in a plan view. The position and shape of the third surface electrode 253S on the substrate surface 221 can be changed arbitrarily.

[0153] The semiconductor light emitting device 10Q includes a plurality of fourth surface electrodes 254S. In one example, the semiconductor light emitting device 10Q includes eight fourth surface electrodes 254S. The number of the fourth surface electrodes 254S may be changed depending on the configuration of the edge light emitting element 230.

[0154] In order to distinguish the multiple fourth surface electrodes 254S, they are referred to as first to eighth auxiliary electrodes 551 to 558. It can be said that the multiple fourth surface electrodes 254S include the first to eighth auxiliary electrodes 551 to 558.

[0155] The first to eighth auxiliary electrodes 551 to 558 are disposed apart from the third surface electrode 253S. The first to eighth auxiliary electrodes 551 to 558 are disposed so as to surround the third surface electrode 253S in a plan view.

[0156] The first auxiliary electrode 551 is disposed apart from the third surface electrode 253S in the Y direction. The first auxiliary electrode 551 is disposed closer to the third substrate side surface 225 in the Y direction of the substrate surface 221. It can be said that the first auxiliary electrode 551 is disposed between the third surface electrode 253S and the third substrate side surface 225.

[0157] The second to seventh auxiliary electrodes 552 to 557 are disposed apart from the third surface electrode 253S in the X direction. The second to seventh auxiliary electrodes 552 to 557 are disposed between the third surface electrode 253S and the first surface electrode 251S. The light-receiving submount 770 is disposed on the first surface electrode 251S, and the edge light emitting element 230 is disposed on the third surface electrode 253S. It can be said that the second to seventh auxiliary electrodes 552 to 557 are disposed between the light-receiving submount 770 and the edge light emitting element 230 in a plan view. The second to seventh auxiliary electrodes 552 to 557 correspond to "multiple intermediate electrodes."

[0158] The eighth auxiliary electrode 558 is disposed away from the third surface electrode 253S in the Y direction. The eighth auxiliary electrode 558 is disposed closer to the fourth substrate side surface 226 in the Y direction of the substrate surface 221. It can be said that the eighth auxiliary electrode 558 is disposed between the third surface electrode 253S and the fourth substrate side surface 226.

[0159] In one example, the first to eighth auxiliary electrodes 551 to 558 are formed in a rectangular shape in which the length in the Y direction is shorter than the length in the X direction in a plan view. The arrangement positions and shapes of the first to eighth auxiliary electrodes 551 to 558 on the substrate surface 221 can be changed arbitrarily.

[0160] 37 and 38, the semiconductor light emitting device 10Q includes back electrodes 251R-254R provided on the substrate back surface 222. The back electrodes 251R-254R are formed of a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0161] As shown in FIG. 38, the first back surface electrode 251R is disposed closer to the first substrate side surface 223 than the center in the X direction of the substrate back surface 222 in a plan view. The first back surface electrode 251R is disposed in the center in the Y direction of the substrate back surface 222. In one example, the first back surface electrode 251R is formed in a rectangular shape in which the length in the Y direction is longer than the length in the X direction in a plan view. In one example, the first back surface electrode 251R is formed to have the same size as the first surface electrode 251S shown in FIG. The arrangement position and shape of the first back surface electrode 251R on the substrate back surface 222 can be changed arbitrarily.

[0162] The second back surface electrode 252R is disposed apart from the first back surface electrode 251R. The second back surface electrode 252R is disposed apart from the first back surface electrode 251R in the Y direction in a plan view. The second back surface electrode 252R is disposed closer to the first substrate side surface 223 than the center in the X direction of the substrate back surface 222 in a plan view. The second back surface electrode 252R is disposed closer to the fourth substrate side surface 226 than the center in the Y direction of the substrate back surface 222. It can be said that the second back surface electrode 252R is disposed between the first back surface electrode 251R and the fourth substrate side surface 226. In one example, the second back surface electrode 252R is formed in a rectangular shape whose length in the Y direction is shorter than its length in the X direction in a plan view. In one example, the second back surface electrode 252R is formed to have the same size as the second surface electrode 252S shown in FIG. 36. The arrangement position and shape of the second back surface electrode 252R on the substrate back surface 222 can be changed arbitrarily.

[0163] The third back surface electrode 253R is disposed apart from the first back surface electrode 251R. The third back surface electrode 253R is disposed apart from the first back surface electrode 251R in the X direction in a plan view. The third back surface electrode 253R is disposed closer to the second substrate side surface 224 than the center in the X direction of the substrate back surface 222 in a plan view. The third back surface electrode 253R is disposed in the center in the Y direction of the substrate back surface 222. In one example, the third back surface electrode 253R is formed in a rectangular shape in which the length in the Y direction is shorter than the length in the X direction in a plan view. In one example, the third back surface electrode 253R is formed to have the same size as the third surface electrode 253S shown in FIG. 36. The arrangement position and shape of the third back surface electrode 253R on the substrate back surface 222 can be changed arbitrarily.

[0164] The semiconductor light emitting device 10Q includes a plurality of fourth rear surface electrodes 254R. In one example, the semiconductor light emitting device 10Q includes eight fourth rear surface electrodes 254R. The number of the fourth rear surface electrodes 254R may be set corresponding to the number of the fourth front surface electrodes 254S.

[0165] The plurality of fourth rear surface electrodes 254R are distinguished from one another by first to eighth auxiliary electrodes 561 to 568. It can be said that the plurality of fourth rear surface electrodes 254R include the first to eighth auxiliary electrodes 561 to 568.

[0166] The first auxiliary electrode 561 is disposed apart from the third back surface electrode 253R in the Y direction. The first auxiliary electrode 561 is disposed closer to the third substrate side surface 225 in the Y direction of the substrate front surface 221. It can be said that the first auxiliary electrode 561 is disposed between the third back surface electrode 253R and the third substrate side surface 225.

[0167] The second to seventh auxiliary electrodes 562 to 567 are arranged apart from the third back surface electrode 253R in the X direction. The second to seventh auxiliary electrodes 562 to 567 are arranged between the third back surface electrode 253R and the first back surface electrode 251R.

[0168] The eighth auxiliary electrode 568 is arranged to be spaced apart from the third back surface electrode 253R in the Y direction. The eighth auxiliary electrode 568 is arranged closer to the fourth substrate side surface 226 in the Y direction of the substrate front surface 221. It can be said that the eighth auxiliary electrode 568 is arranged between the third back surface electrode 253R and the fourth substrate side surface 226.

[0169] In one example, the first to eighth auxiliary electrodes 561 to 568 are formed in a rectangular shape in which the length in the Y direction is shorter than the length in the X direction in a plan view. The arrangement positions and shapes of the first to eighth auxiliary electrodes 561 to 568 on the substrate rear surface 222 can be changed arbitrarily.

[0170] 36 to 38, semiconductor light emitting device 10Q includes vias 251V to 254V provided in substrate 220. In Fig. 36 and Fig. 38, vias 251V to 254V are indicated by dashed lines. Vias 251V to 254V may be formed from a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W, for example.

[0171] The vias 251V to 254V penetrate the substrate 220 in the Z direction. The first via 251V electrically connects the first front surface electrode 251S and the first back surface electrode 251R. The second via 252V electrically connects the second front surface electrode 252S and the second back surface electrode 252R. The third via 253V electrically connects the third front surface electrode 253S and the third back surface electrode 253R. The fourth via 254V electrically connects the fourth front surface electrode 254S and the fourth back surface electrode 254R. The number of each of the vias 251V to 254V can be changed as appropriate.

[0172] (Light emitting submount) 36 and 37, the light emitting submount 260 is formed in a rectangular flat plate shape with the thickness direction being in the Z direction. The light emitting submount 260 is formed of, for example, a conductive material. As the conductive material, for example, Cu, Al, etc. are used. In one example, the light emitting submount 260 is formed of Cu.

[0173] Light emitting submount 260 includes opposite facing submount surface 261 and submount backside surface 262. Submount surface 261 faces the same side as substrate surface 221 of substrate 220, and submount backside surface 262 faces the same side as substrate backside surface 222 of substrate 220.

[0174] The light emitting submount 260 is electrically connected to the third surface electrode 253S by a conductive bonding material 91. The conductive bonding material 91 is in contact with the submount back surface 262. In a plan view, the X-direction dimension of the light emitting submount 260 is smaller than the X-direction dimension of the third surface electrode 253S, and the Y-direction dimension of the light emitting submount 260 is smaller than the Y-direction dimension of the third surface electrode 253S.

[0175] (Edge-emitting device) The edge light emitting element 230 is arranged at a distance in the X direction from the light receiving element 240. In one example, the edge light emitting element 230 is arranged at a position overlapping with the light receiving element 240 when viewed from the X direction. The edge light emitting element 230 is arranged closer to the second substrate side surface 224 than the light receiving element 240.

[0176] The edge light emitting element 230 is a laser diode that emits laser light in a predetermined wavelength band, and functions as a light source for the semiconductor light emitting device 10Q. For example, an edge emitting laser is used as the edge light emitting element 230. The wavelength band of this laser light may be a visible light band, or may be a long wavelength band having a longer wavelength than visible light such as ultraviolet light.

[0177] The edge light emitting element 230 is formed in a rectangular parallelepiped shape. In one example, the edge light emitting element 230 is formed in a rectangular shape in which the length in the Y direction is longer than the length in the X direction in a plan view. The shape of the edge light emitting element 230 in a plan view can be changed arbitrarily.

[0178] As shown in Fig. 36 and Fig. 37, the edge light emitting device 230 includes a light emitting device front surface 231 and a light emitting device back surface 232 facing opposite sides to each other in the Z direction, a first element end surface 233 and a second element end surface 234 facing opposite sides to each other in the X direction, and element side surfaces 235, 236 facing opposite sides to each other in the Y direction. The first element end surface 233 and the second element end surface 234 constituting both end surfaces in the X direction are formed by flat surfaces perpendicular to the light emitting device front surface 231 (light emitting device back surface 232). The first element end surface 233 and the second element end surface 234 face opposite sides to each other. The semiconductor light emitting device 10Q is configured to emit a first laser light L1 from the first element end surface 233 in the X direction, which is an example of a first direction (X direction) intersecting with the Z direction in a plan view. Moreover, semiconductor light emitting device 10Q is configured to emit second laser light L2 from second element end surface 234 in the opposite direction to the emission direction of first laser light L1.

[0179] As shown in FIG. 36, the edge light emitting element 230 includes eight first light emitting electrodes 2371-2378 formed on the light emitting element front surface 231 and one second light emitting electrode 238 formed on the light emitting element rear surface 232. The edge light emitting element 230 includes emission regions 233A, 234A for each of the first light emitting electrodes 2371-2378. In a plan view, the first light emitting electrodes 2371-2378 are arranged at a distance in the Y direction. The emission regions 233A, 234A are arranged in the Y direction. The edge light emitting element 230 is configured to emit laser light from the emission regions 233A, 234A. In one example, the first light emitting electrodes 2371-2378 may form an anode, and the second light emitting electrode 238 may form a cathode. The first light-emitting electrodes 2371 to 2378 and the second light-emitting electrode 238 may be configured with a laminated structure of a plurality of conductive films.

[0180] The edge light emitting device 230 has a semiconductor laminated structure composed of a plurality of semiconductor layers including a light emitting layer. The light emitting layer is composed of, for example, one or more active layers. The light emitting layer extends in the X direction. The edge light emitting device 230 is configured to emit laser light generated in the light emitting layer by power supplied by the first light emitting electrodes 2371-2378 and the second light emitting electrode 238 from the first element end face 233 and the second element end face 234. It can be said that the first element end face 233 and the second element end face 234 have emission regions 233A and 234A that emit laser light. In FIG. 36, the emission regions 233A and 234A of the first element end face 233 and the second element end face 234 are clearly shown. In one example, the emission regions 233A and 234A are located closer to the light emitting element surface 231 than the center in the thickness direction.

[0181] The edge light emitting element 230 is disposed on the light emitting submount 260. The edge light emitting element 230 is bonded to the light emitting submount 260 by a conductive adhesive 91. In one example, the edge light emitting element 230 is disposed with the second light emitting electrode 238 facing the submount surface 261 of the light emitting submount 260. The second light emitting electrode 238 of the edge light emitting element 230 is electrically connected to the light emitting submount 260 by the conductive adhesive 91. This conductive adhesive 91 is in contact with the submount surface 261.

[0182] 36, the edge light emitting element 230 is electrically connected to the first to eighth auxiliary electrodes 551 to 558. The first light emitting electrodes 2371 to 2378 of the edge light emitting element 230 are electrically connected to the first to eighth auxiliary electrodes 551 to 558 by a plurality of wires W1. The wires W1 are bonding wires formed by, for example, a wire bonding device, and are made of a conductive material such as Au, Al, Cu, etc.

[0183] (Photo-receiving submount) The semiconductor light emitting device 10Q includes a light-receiving submount 770 disposed on the substrate surface 221 of the substrate 220. In one example, the light-receiving submount 770 is disposed on the first surface electrode 251S.

[0184] In one example, the light-receiving submount 770 is formed in a rectangular flat plate shape. The light-receiving submount 770 is formed in a rectangular shape when viewed from the Y direction. In one example, the light-receiving submount 770 is formed in a parallelogram shape when viewed from the Y direction.

[0185] The light-receiving submount 770 includes a mounting surface 771 and a mounting back surface 772 that face opposite each other in the thickness direction of the light-receiving submount 770, a mounting surface 773 and a top surface 774 that face opposite each other in the Z direction, and side surfaces 775 and 776 that face opposite each other in the Y direction. In one example, the mounting surface 771, the mounting back surface 772, the mounting surface 773, and the top surface 774 are formed in a rectangular shape, and the side surfaces 775 and 776 are formed in a parallelogram shape. The light-receiving submount 770 is disposed with the mounting surface 773 facing the substrate surface 221 of the substrate 220.

[0186] 36, the light-receiving submount 770 is disposed so as to straddle the first surface electrode 251S and the second surface electrode 252S. The light-receiving submount 770 is disposed so that the mounting surface 771 faces the second element end surface 234 of the end surface light emitting element 230. In one example, the light-receiving submount 770 is bonded to the first surface electrode 251S and the second surface electrode 252S by an adhesive 92. In one example, the adhesive 92 may include an insulating resin material such as an epoxy resin.

[0187] 36 and 37, a first mounting electrode 777 and a second mounting electrode 778 are formed on the mounting surface 771. In one example, the first mounting electrode 777 and the second mounting electrode 778 are formed in a rectangular shape when viewed from a direction perpendicular to the mounting surface 771. In one example, the first mounting electrode 777 and the second mounting electrode 778 are formed on the mounting surface 771 so as to extend from an end on the mounting surface 773 side to an end on the upper surface 774 side. The first mounting electrode 777 and the second mounting electrode 778 may be formed of a material including one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.

[0188] The first mounting electrode 777 is electrically connected to the first surface electrode 251S by a conductive bonding material 93. The second mounting electrode 778 is electrically connected to the second surface electrode 252S by a conductive bonding material 93.

[0189] The mounting surface 771 of the light-receiving submount 770 may be along a direction intersecting the substrate surface 221 when viewed from the Y direction. The angle of the mounting surface 771 with respect to the substrate surface 221 may be determined by the angle between the mounting surface 771 of the light-receiving submount 770 and a mounting surface 773 facing the substrate surface 221. The angle between the mounting surface 771 and the mounting surface 773 may be referred to as the inclination angle of the mounting surface 771. The inclination angle may be greater than or equal to 60 degrees and less than or equal to 90 degrees.

[0190] The light-receiving submount 770 of the tenth embodiment is formed such that, in the X direction, the mounting surface 771 becomes more distant from the second element end surface 234 as it moves away from the substrate surface 221. The inclination angle of the light-receiving submount 770 of the tenth embodiment may be equal to or greater than 60 degrees and less than 90 degrees.

[0191] (Photodetector) 36 and 37, the light-receiving element 240 is mounted on a light-receiving submount 770. The light-receiving element 240 is mounted on a mounting surface 771 of the light-receiving submount 770.

[0192] The light receiving element 240 is formed in a rectangular plate shape. The light receiving element 240 includes a light receiving element front surface 241 and a light receiving element back surface 242 that face opposite to each other in the thickness direction. The light receiving element 240 is configured to receive a plurality of second laser beams L2 emitted from a plurality of emission regions 234A of the edge surface light emitting element 230.

[0193] The light receiving element 240 is, for example, a photodiode. The light receiving element 240 includes a light receiving portion 243. The light receiving portion 243 is formed on a light receiving element surface 241. The formation range of the light receiving portion 243 is defined, for example, by a p-type well region formed on an n-type semiconductor substrate provided on the light receiving element 240. The light receiving element 240 further includes a first light receiving electrode 244 and a second light receiving electrode 245. The first light receiving electrode 244 is formed on the light receiving element surface 241. The second light receiving electrode 245 is formed on the light receiving element rear surface 242. The first light receiving electrode 244 constitutes one of the anode and cathode of the photodiode, and the second light receiving electrode 245 constitutes the other of the anode and cathode of the photodiode. In the first embodiment, the first light receiving electrode 244 constitutes the anode, and the second light receiving electrode 245 constitutes the cathode. The light receiving element 240 is configured so that a current flows from a first light receiving electrode 244 to a second light receiving electrode 245 of the light receiving element 240 in accordance with the amount of light irradiated onto the light receiving portion 243 .

[0194] The light-receiving element 240 is bonded to a first mounting electrode 777 provided on a mounting surface 771 of the light-receiving submount 770. The light-receiving element 240 is disposed such that the second light-receiving electrode 245 faces the first mounting electrode 777. The second light-receiving electrode 245 is electrically connected to the first mounting electrode 777 by a conductive bonding material 91.

[0195] The first light-receiving electrode 244 of the light-receiving element 240 is electrically connected to the second mounting electrode 778 by a wire W2. In one example, a first end of the wire W2 is electrically connected to the first light-receiving electrode 244, and a second end of the wire W2 is electrically connected to the second mounting electrode 778. Note that the first end of the wire W2 may be electrically connected to the first light-receiving electrode 244, and the second end of the wire W2 may be electrically connected to the second mounting electrode 778. The wire W2 is, for example, a bonding wire formed by a wire bonding apparatus, and is formed of a conductive material such as Au, Al, or Cu.

[0196] The light receiving portion 243 of the light receiving element 240 mounted on the light receiving submount 770 faces the same direction as the mounting surface 771 of the light receiving submount 770. The mounting surface 771 faces the second element end surface 234 of the edge light emitting element 230. Therefore, the light receiving portion 243 of the light receiving element 240 faces the second element end surface 234 of the edge light emitting element 230. The mounting surface 771 of the light receiving submount 770 is formed so as to move away from the second element end surface 234 in the Z direction as it moves away from the substrate surface 221. Therefore, it can be said that the light receiving element 240 is disposed so that the light receiving element surface 241 moves away from the second element end surface 234 in the Z direction as it moves away from the substrate surface 221.

[0197] The light-receiving submount 770 is disposed such that the light-receiving element surface 241 of the light-receiving element 240 mounted on the light-receiving submount 770 is spaced apart in the X direction from the second element end face 234 of the edge light-emitting element 230. A distance D1 between the second element end face 234 of the edge light-emitting element 230 and the light-receiving element surface 241 of the light-receiving element 240 is preferably 0.5 mm or more and 2.6 mm or less. The distance D1 may be the distance in the X direction between a position on the light-receiving element surface 241 of the light-receiving element 240 that is the same as the position of the emission region 234A of the second element end face 234 in the Z direction, and the second element end face 234 of the edge light-emitting element 230.

[0198] (Cover material) 1, 2, and 4, the semiconductor light emitting device 10Q includes a cover member 580. The cover member 580 accommodates at least a portion of the edge light emitting element 230 and at least a portion of the light receiving element 240. The cover member 580 shown in FIG. 2 accommodates the entire edge light emitting element 230 and the entire light receiving element 240.

[0199] The cover member 580 is provided on the substrate 220. The cover member is attached to the substrate surface 221 of the substrate 220 by, for example, an adhesive. The semiconductor light emitting device 10Q includes a sealed space 588 formed between the inner surface of the cover member and the substrate surface 221 of the substrate 220. It can be said that the edge light emitting element 230 and the light receiving element 240 are disposed in the sealed space 588.

[0200] The cover member 580 is formed in a box shape that opens toward the substrate 220 . The cover member 580 includes a main body 581. The main body 581 has an opening 582 through which the laser light emitted from the first element end surface 233 of the end surface light emitting element 230 passes. The main body 581 includes side walls 583, 584 extending along the substrate side surfaces 225, 226 of the substrate 220, a side wall 585 extending along the substrate side surface 223 of the substrate 220, and an upper wall 586 covering the end surface light emitting element 230 and the light receiving element 240 in the Z direction. The side walls 583, 584, 585 are formed in a flat plate shape extending along the substrate side surfaces 225, 226, 223. The upper wall 586 is formed in a flat plate shape perpendicular to the Z direction.

[0201] The cover member 580 may include a window member 587 that closes the opening 582 of the main body portion 581. The window member 587 is formed to extend along the substrate side surface 224 of the substrate 220. The window member 587 is formed in a flat plate shape that extends along the substrate side surface 224. The window member 587 is formed integrally with the main body portion 581. The window member 587 and the main body portion 581 may be one piece.

[0202] The main body 581 may be formed of a material that is translucent to the laser light emitted from the end surface light emitting element 230. The main body 581 may be formed of a glass material, or a resin material such as a silicone resin, an epoxy resin, or an acrylic resin. The main body 581 may be formed of a material that is light blocking to the laser light emitted from the end surface light emitting element 230. The main body 581 may be formed of a material containing a metal material or ceramics.

[0203] (effect) The semiconductor light emitting device 10Q of the tenth embodiment has the following advantages. (10-1) The same effects as those of the semiconductor light emitting device 10 of the first embodiment are achieved.

[0204] (10-2) The edge light emitting element 230 includes a plurality of emission regions 233A. This can improve the laser output of the semiconductor light emitting device 10Q. Eleventh embodiment A semiconductor light emitting device 10R of the eleventh embodiment will be described with reference to Figs. 39 to 41. The semiconductor light emitting device 10R of the eleventh embodiment has a different arrangement of front electrodes compared to the semiconductor light emitting device 10Q of the tenth embodiment. Differences from the semiconductor light emitting device 10Q of the tenth embodiment will be described in detail below. Components common to the semiconductor light emitting device 10Q of the tenth embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0205] Fig. 39 is a schematic plan view of a semiconductor light emitting device 10R according to an eleventh embodiment. Fig. 40 is a schematic cross-sectional view of the semiconductor light emitting device 10R taken along line 40-40 in Fig. 39. Fig. 41 is a schematic back view of the semiconductor light emitting device 10R of Fig. 39.

[0206] As shown in FIGS. 39 to 41, the semiconductor light emitting device 10R includes first to eighth auxiliary electrodes 551 to 558 which are a plurality of fourth surface electrodes 254S. The second to seventh auxiliary electrodes 552 to 557 are disposed on the opposite side of the first surface electrode 251S from the end surface light emitting element 230. The second to seventh auxiliary electrodes 552 to 557 are disposed closer to the first substrate side surface 223 than the light receiving submount 770 and the light receiving element 240. The second to seventh auxiliary electrodes 552 to 557 can be said to be disposed so as to sandwich the light receiving submount 770 and the light receiving element 240 between them and the end surface light emitting element 230 in a plan view. The second to seventh auxiliary electrodes 552 to 557 correspond to "a plurality of end electrodes."

[0207] 39 and 40, the wires W1 electrically connecting the first light-emitting electrodes 2372-2377 and the second to seventh auxiliary electrodes 552-557 of the end surface light-emitting element 230 are arranged to pass on the side opposite the substrate 220 with respect to the light-receiving submount 770 and the light-receiving element 240 in the Z direction. The wires W2 electrically connecting the first light-emitting electrodes 2372-2377 and the second to seventh auxiliary electrodes 552-557 are arranged to pass between the light-receiving element 240 and the light-receiving submount 770 and the cover member 580, more specifically, between the light-receiving element 240 and the light-receiving submount 770 and the upper wall 586 of the cover member 580.

[0208] (action) In the case where the second to seventh auxiliary electrodes 552-557 are disposed between the end surface light emitting element 230 and the light receiving element 240 as in the semiconductor light emitting device 10Q of the tenth embodiment, the amount of light incident on the light receiving element 240 may decrease or vary depending on the state of the wires W2 connected to the second to seventh auxiliary electrodes 552-557. In contrast, in the semiconductor light emitting device 10R of the eleventh embodiment, the wires W2 electrically connecting the first light emitting electrodes 2372-2377 of the end surface light emitting element 230 and the second to seventh auxiliary electrodes 552-557 are disposed to pass on the side opposite the substrate 220 with respect to the light receiving submount 770 and the light receiving element 240 in the Z direction. This allows a stable amount of light to be incident on the light receiving element 240.

[0209] (effect) The semiconductor light emitting device 10R of the eleventh embodiment has the following advantages. (11-1) The same effects as those of the semiconductor light emitting device 10Q of the tenth embodiment are achieved.

[0210] (11-2) In the semiconductor light emitting device 10R of the eleventh embodiment, the wires W2 electrically connecting the first light emitting electrodes 2372-2377 of the end surface light emitting element 230 to the second to seventh auxiliary electrodes 552-557 are arranged to pass on the side opposite the substrate 220 with respect to the light receiving submount 770 and the light receiving element 240 in the Z direction. This allows a stable amount of light to be incident on the light receiving element 240.

[0211] (Example of change) The above embodiment can be modified, for example, as follows. The above embodiment and the following modified examples can be combined with each other as long as no technical contradiction occurs. In the following modified examples, the same reference numerals as in the above embodiment are used for the parts common to the above embodiment, and the description thereof will be omitted.

[0212] In the tenth and eleventh embodiments, the number of emission regions included in one edge light emitting element may be changed as appropriate. In contrast to the tenth and eleventh embodiments, the semiconductor light emitting device may include a plurality of edge light emitting elements. For example, a semiconductor light emitting device may be configured with a plurality of edge light emitting elements 30 shown in the first embodiment. The number of edge light emitting elements may be any number equal to or greater than two. The number of light emitting portions included in the edge light emitting element may be any number equal to or greater than two. For example, four edge light emitting elements, each including two light emitting portions, may be mounted.

[0213] The configuration of the substrate 20 may be changed as appropriate. The substrate 20 may be made of a metal material such as Cu or Al. In this case, an insulating layer is formed on the front and back surfaces of a flat-plate frame (e.g., a metal core) made of Cu, Al, or the like. A plurality of front surface electrodes are formed on the insulating layer (substrate front surface 21) formed on the front surface of the frame. A plurality of back surface electrodes are formed on the insulating layer (substrate back surface 22) formed on the back surface of the frame. A plurality of through-wires (vias) that individually and electrically connect the plurality of back surface electrodes and the plurality of front surface electrodes penetrate the frame in its thickness direction (Z direction). In this case, an insulating layer is formed on the inner surface constituting the through hole formed in the frame. The through-wires are formed, for example, so as to fill a space formed in the insulating layer. The same can be applied to the substrate 220 and the members related to the substrate 220.

[0214] In the above embodiment, the configurations of the substrate 20, the first to fourth surface electrodes 51S to 54S, the first to fourth back electrodes 51R to 54R, and the first to fourth vias 51V to 54V can be changed as desired. In one example, the semiconductor light emitting device may include a frame in which the surface electrodes, the back electrodes, and the vias are integrated, instead of the multiple surface electrodes, the multiple back electrodes, and the multiple vias, and a substrate formed of an insulating material that supports the frame. In this case, a plurality of frames are provided according to the multiple surface electrodes (multiple back electrodes). The substrate is formed of an insulating material such as epoxy resin. The multiple frames are provided so as to penetrate the substrate in the Z direction. Therefore, the multiple frames exposed from the substrate surface of the substrate constitute multiple surface electrodes, and the multiple frames exposed from the substrate back surface constitute multiple back electrodes.

[0215] The terms "first", "second", "third", etc. in this disclosure are used merely to distinguish objects and do not rank the objects. The term "at least one" as used herein means "one or more" of the desired options. As an example, the term "at least one" as used herein means "only one option" or "both of two options" if the number of options is two. As another example, the term "at least one" as used herein means "only one option" or "any combination of two or more options" if the number of options is three or more.

[0216] The term "on" as used in this disclosure includes both the meanings of "on" and "above" unless the context clearly indicates otherwise. Thus, the phrase "a first layer is formed on a second layer" is intended to mean that in some embodiments, the first layer may be disposed directly on the second layer in contact with the second layer, while in other embodiments, the first layer may be disposed above the second layer without contacting the second layer. That is, the term "on" does not exclude a structure in which another layer is formed between the first layer and the second layer.

[0217] The Z-axis direction used in the present disclosure does not necessarily have to be a vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to the present disclosure (for example, the structure shown in FIG. 1) are not limited to the "up" and "down" of the Z-axis direction described in this specification being "up" and "down" of the vertical direction. For example, the X-axis direction may be a vertical direction, or the Y-axis direction may be a vertical direction.

[0218] (Additional Note) The technical ideas that can be understood from the present disclosure are described below. Note that, for the purpose of aiding understanding, not for the purpose of limitation, the components described in the appendices are given the reference symbols of the corresponding components in the embodiments. The reference symbols are shown as examples for the purpose of aiding understanding, and the components described in each appendix should not be limited to the components indicated by the reference symbols.

[0219] (Appendix 1) a substrate (20) including a substrate surface (21); an edge light emitting element (30) mounted on the substrate surface (21), including a first element end face facing a first direction intersecting a thickness direction perpendicular to the substrate surface (21) and a second element end face facing a direction opposite to the first element end face, and configured so that light is emitted from the first element end face and the second element end face; a light-receiving submount (70) provided on the substrate surface (21) and having a mounting surface facing the second element end surface; a light receiving element (40) mounted on the mounting surface and including a light receiving portion provided on a surface of the light receiving element and facing the second element end surface; Equipped with Semiconductor light emitting device.

[0220] (Appendix 2) The light-receiving submount (70) has insulating properties. 2. The semiconductor light emitting device of claim 1.

[0221] (Appendix 3) The light-receiving submount (70) is formed so that the mounting surface is perpendicular to the substrate surface (21). 3. The semiconductor light emitting device according to claim 1 or 2.

[0222] (Appendix 4) the light-receiving submount (70) is formed such that the mounting surface becomes more distant from the second element end surface as it moves away from the substrate surface (21) in the thickness direction; 3. The semiconductor light emitting device according to claim 1 or 2.

[0223] (Appendix 5) The angle of the mounting surface with respect to the substrate surface (21) is equal to or greater than 60 degrees and smaller than 90 degrees. 5. The semiconductor light emitting device according to claim 4.

[0224] (Appendix 6) The substrate (20) includes a substrate back surface facing opposite the substrate front surface (21), a first back surface electrode and a second back surface electrode provided on a back surface of the substrate; The light receiving element (40) is electrically connected between the first back surface electrode and the second back surface electrode. 6. A semiconductor light emitting device according to claim 1.

[0225] (Appendix 7) The light receiving element (40) includes a first light receiving electrode provided on a front surface of the light receiving element (40), a back surface of the light receiving element (40) facing the opposite side to the front surface of the light receiving element (40), and a second light receiving electrode provided on the back surface of the light receiving element (40). 7. The semiconductor light emitting device according to claim 6.

[0226] (Appendix 8) The light receiving element (40) includes a back surface of the light receiving element (40) facing the opposite side to the front surface of the light receiving element (40), and a first light receiving electrode and a second light receiving electrode provided on the back surface of the light receiving element (40). 7. The semiconductor light emitting device according to claim 6.

[0227] (Appendix 9) the light-receiving submount (70) is provided on the mounting surface and includes a first mounting electrode electrically connected to the first light-receiving electrode and a second mounting electrode electrically connected to the second light-receiving electrode; 9. The semiconductor light emitting device according to claim 7 or 8.

[0228] (Appendix 10) a first surface electrode provided on the substrate surface (21) and electrically connected to the first back surface electrode; a second surface electrode provided on the substrate surface (21) and electrically connected to the second back surface electrode; Including, the first mounting electrode is electrically connected to the first surface electrode; the second mounting electrode is electrically connected to the second surface electrode; 10. The semiconductor light emitting device of claim 9.

[0229] (Appendix 11) The light-receiving submount (70) is disposed so as to straddle the first surface electrode and the second surface electrode. 11. The semiconductor light emitting device of claim 10.

[0230] (Appendix 12) the light-receiving submount (70) is disposed on the substrate surface (21) so as not to overlap the first surface electrode and the second surface electrode when viewed from the thickness direction; 11. The semiconductor light emitting device of claim 10.

[0231] (Appendix 13) a first wire electrically connecting the first light receiving electrode and the second mounting electrode; 13. The semiconductor light emitting device according to claim 10.

[0232] (Appendix 14) The light-receiving submount (70) is integrally formed with the substrate (20). 10. The semiconductor light emitting device of claim 9.

[0233] (Appendix 15) a first internal wiring and a second internal wiring provided inside the light-receiving submount (70) and the substrate (20); the first internal wiring electrically connects the first mounting electrode and the first back surface electrode; the second internal wiring electrically connects the second mounting electrode and the second back surface electrode; 15. The semiconductor light emitting device of claim 14.

[0234] (Appendix 16) the light-receiving submount (70) and the substrate (20) are made of ceramic; 16. The semiconductor light emitting device according to claim 14 or 15.

[0235] (Appendix 17) a third surface electrode provided on the substrate surface (21); a fourth surface electrode provided on the substrate surface (21) and spaced apart from the third surface electrode; Including, The edge light emitting element (30) is electrically connected to the third surface electrode. 17. The semiconductor light emitting device according to claim 1.

[0236] (Appendix 18) The substrate (20) includes a substrate back surface facing opposite the substrate front surface (21), a third back surface electrode provided on a back surface of the substrate and electrically connected to the third front surface electrode; a fourth back surface electrode provided on a back surface of the substrate and electrically connected to the fourth front surface electrode; 18. The semiconductor light emitting device of claim 17, comprising:

[0237] (Appendix 19) The edge light emitting element (30) is a light emitting element surface facing in the same direction as the substrate surface (21); a back surface of the light emitting element facing in a direction opposite to the front surface of the light emitting element; a first light-emitting electrode formed on a surface of the light-emitting element; A second light-emitting electrode formed on a rear surface of the light-emitting element; Including, the second light-emitting electrode is electrically connected to the third surface electrode; 19. The semiconductor light emitting device according to claim 17 or 18.

[0238] (Appendix 20) a second wire electrically connecting the first light-emitting electrode and the fourth surface electrode; 20. The semiconductor light emitting device of claim 19.

[0239] (Appendix 21) a light emitting submount disposed on the third surface electrode; The edge light emitting element (30) is disposed on the light emitting submount. 21. The semiconductor light emitting device according to claim 19 or 20.

[0240] (Appendix 22) The light receiving element (40) is arranged such that an emission region of the second element end surface of the end surface light emitting element (30) is located between both ends of the light receiving portion in the thickness direction. 22. The semiconductor light emitting device of claim 21.

[0241] (Appendix 23) the light emitting submount is formed of a conductive material; the second light-emitting electrode is electrically connected to the third surface electrode through the light-emitting submount; 23. The semiconductor light emitting device according to claim 21 or 22.

[0242] (Appendix 24) The light emitting submount comprises: A base formed of an insulating material; a through-wire formed of a conductive material and passing through the base; Including, the second light-emitting electrode is electrically connected to the third surface electrode through the through-wire; 23. The semiconductor light emitting device according to claim 21 or 22.

[0243] (Appendix 25) The edge light emitting element (30) includes a plurality of emission regions on the second element edge surface and a plurality of the first light emitting electrodes provided on the light emitting element surface. 25. The semiconductor light emitting device according to claim 19.

[0244] (Appendix 26) The edge light emitting element (30) includes one emission region on the second element edge surface, A plurality of the edge light emitting devices (30), The edge light emitting elements (30) are arranged in a second direction intersecting the first direction when viewed from the thickness direction. 25. The semiconductor light emitting device according to claim 19.

[0245] (Appendix 27) The fourth surface electrode is provided in plurality on the substrate surface (21), a plurality of wires electrically connecting the plurality of first light-emitting electrodes and the plurality of fourth surface electrodes; Including, 27. The semiconductor light emitting device according to claim 25 or 26.

[0246] (Appendix 28) the plurality of fourth surface electrodes include a plurality of intermediate electrodes disposed between the edge light emitting element (30) and the light receiving submount (70) when viewed from the thickness direction; 28. The semiconductor light emitting device of claim 27.

[0247] (Appendix 29) the plurality of fourth surface electrodes include a plurality of end electrodes arranged to sandwich the light-receiving submount (70) and the light-receiving element (40) between the end surface light-emitting element (30) and the end surface light-emitting element (30) when viewed in the thickness direction; a plurality of wires electrically connecting the plurality of end electrodes and the first light-emitting electrode are arranged to pass through a side opposite to the substrate (20) with respect to the light-receiving element (40) in the thickness direction; 28. The semiconductor light emitting device of claim 27.

[0248] (Appendix 30) The light receiving element (40) receives light emitted from the second element end faces of the plurality of edge light emitting elements (30). 30. The semiconductor light emitting device according to claim 28 or 29.

[0249] (Appendix 31) a plurality of light receiving elements (40) for receiving light emitted from a plurality of the edge light emitting elements (30); 30. The semiconductor light emitting device according to claim 28 or 29.

[0250] (Appendix 32) The edge light emitting element (30) is configured so that the output of light radiated from the second element edge surface is smaller than the output of light emitted from the first element edge surface. 32. The semiconductor light emitting device according to claim 1 ,

[0251] (Appendix 33) a cover member provided on the substrate surface (21) and housing the edge light emitting element (30) and the light receiving element (40); 33. The semiconductor light emitting device according to claim 1.

[0252] (Appendix 34) the cover member includes a main body portion that houses the end surface light emitting element (30) and the light receiving element (40) and has an opening through which the laser light emitted from the first element end surface passes; 34. The semiconductor light emitting device of claim 33.

[0253] (Appendix 35) the cover member includes a window member that closes the opening, the window member is formed of a material that is transmissive to the laser light; 35. The semiconductor light emitting device of claim 34.

[0254] (Appendix 36) The main body is formed of a material having a light-shielding property. 36. The semiconductor light emitting device according to claim 34 or 35.

[0255] (Appendix 37) The main body is formed of a light-transmitting material. 36. The semiconductor light emitting device according to claim 34 or 35.

[0256] (Appendix 38) a sealing member that seals at least a portion of the edge light emitting element (30) and the light receiving element (40); 33. The semiconductor light emitting device according to claim 1.

[0257] (Appendix 39) the first element end face is exposed from the sealing member; 39. The semiconductor light emitting device of claim 38.

[0258] (Appendix 40) The sealing member is formed of a material that blocks light in a wavelength range including visible light. The edge light emitting element (30) is configured to emit light in a wavelength range that is transmitted through the sealing member. 40. The semiconductor light emitting device according to claim 38 or 39.

[0259] (Appendix 41) the sealing member has a sealing surface facing the same side as the substrate surface (21); When viewed from the thickness direction, a light-shielding layer is provided on the sealing surface between the second element end face and a surface of the light-receiving element (40). 41. The semiconductor light emitting device according to any one of claims 38 to 40.

[0260] (Appendix 42) A plurality of diffusing materials are provided within the sealing member and diffuse the laser light emitted by the end surface light emitting element (30). 42. The semiconductor light emitting device according to claim 38.

[0261] (Appendix 43) The sealing member is a frame-shaped main body portion provided on the substrate surface (21) and surrounding the edge light emitting element (30) and the light receiving element (40); a sealing resin that is housed in the main body and seals the end surface light emitting element (30) and the light receiving element (40); Including, 39. The semiconductor light emitting device of claim 38.

[0262] (Appendix 44) The distance in the first direction between the second element end face and the surface of the light receiving element (40) is 0.5 mm or more and 2.6 mm or less. 44. The semiconductor light emitting device according to claim 1.

[0263] (Appendix 45) The light-receiving submount (70) is formed in a triangular shape when viewed from a second direction intersecting the thickness direction and the first direction. 45. The semiconductor light emitting device according to claim 1.

[0264] (Appendix 46) The light-receiving submount (70) is formed in a rectangular shape when viewed from the thickness direction and a second direction intersecting the first direction. 45. The semiconductor light emitting device according to claim 1.

[0265] (Appendix 47) The light-receiving submount (70) is formed in a rectangular shape when viewed from the thickness direction and a second direction intersecting the first direction. 45. The semiconductor light emitting device according to claim 1.

[0266] The above description is merely illustrative. Those skilled in the art may recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of describing the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and alterations that fall within the scope of the present disclosure, including the scope of the claims. [Explanation of symbols]

[0267] 10, 10A~10R Semiconductor light-emitting device 20 Substrate 21 Substrate surface 22 Back side of board 23~26 1st~4th board side 30 Edge-emitting element 31 Light emitting element surface 32 Light emitting element back side 33 First element facet 33A output area 34 Second element facet 34A output area 37 First light-emitting electrode 38 Second light-emitting electrode 40 Photodetector 41 Photodetector surface 42 Back side of photodetector 43 Light receiving part 44 1st light receiving electrode 45 2nd light receiving electrode 51S~54S 1st~4th surface electrode 51R~54R 1st~4th back electrode 51V~54V 1st~4th via 60 Light-emitting submount 61 Submount surface 62 Back side of submount 70 Photoreceptor submount 71 Mounting surface 72 Mounting back side 73 Mounting surface 74 Top surface 75 Side 76 Side 77 1st mounted electrode 78 2nd mounted electrode 80 Cover member 81 Main body 82 Opening 83~85 Side wall 86 Upper Wall 87 Window Materials 88 Closed space 91 Conductive bonding material 92 Adhesive 93,94 Conductive bonding material 120 Substrate 140 Photodetector 141 1st light receiving electrode 142 2nd light receiving electrode 151S 1st surface electrode 152S 2nd surface electrode 170 Photoreceptor submount 180 Cover material 191 Light blocking layer 192 Diffusion material 220 Substrate 221 Substrate surface 222 Back side of board 223~226 1st~4th board side 230 Edge-emitting element 231 Light emitting element surface 232 Light emitting element back side 233 First element facet 234 Second element facet 235,236 Side of element 2371~2378 First light-emitting electrode 238 Second light-emitting electrode 240 Photodetector 241 Photodetector surface 242 Back side of photodetector 243 Light receiving part 244 1st light receiving electrode 245 2nd light receiving electrode 250R back common electrode 250S surface common electrode 251S~254S 1st~4th surface electrode 251R~254R 1st~4th back electrode 251V~254V 1st~4th via 260 Light-emitting submount 261 Submount surface 262 Back side of submount 270 Photoreceptor submount 280 Sealing member 281 Sealing surface 282~285 1st~4th sealing side 370 Photoreceptor submount 371 1st internal wiring 372 2nd internal wiring 380 Sealing member 381 Cover material 382 Sealing resin 470 Photoreceptor submount 471 First mounting electrode 472 Second mounting electrode 480 Sealing member 481 Main body 482 Sealing resin 551~558 1st~8th auxiliary electrode 561~568 1st~8th auxiliary electrode 570 Photoreceptor submount 571 1st mounted electrode 572 2nd mounted electrode 580 Cover material 581 Main body 582 Opening 583~585 Side wall 586 Upper Wall 587 Window Materials 588 Closed space 671 First light receiving submount 672 Second photoreceptor submount 770 Photoreceptor submount 771 Mounting surface 772 Mounting back 773 Mounting surface 774 Top surface 775,776 Side 777 1st mounted electrode 778 2nd mounted electrode 2371~2378 First light-emitting electrode D1 Distance L1 First laser beam L2 Second laser beam W1, W2 Wire

Claims

1. a substrate including a substrate surface; an edge light emitting device mounted on the substrate surface, the edge light emitting device including a first element end face facing a first direction intersecting a thickness direction perpendicular to the substrate surface, and a second element end face facing a direction opposite to the first element end face, the edge light emitting device being configured to emit light from the first element end face and the second element end face; a light-receiving submount provided on the substrate surface and having a mounting surface facing the second element end surface; a light receiving element mounted on the mounting surface and including a light receiving portion provided on a surface of the light receiving element and facing the second element end surface; Equipped with Semiconductor light emitting device.

2. The light-receiving submount has insulating properties. The semiconductor light emitting device according to claim 1 .

3. the light-receiving submount is formed so that the mounting surface is perpendicular to the surface of the substrate; The semiconductor light emitting device according to claim 1 .

4. the light-receiving submount is formed such that the mounting surface is spaced further away from the second element end surface as the mounting surface is spaced further away from the substrate surface in the thickness direction; The semiconductor light emitting device according to claim 1 .

5. the angle of the mounting surface with respect to the substrate surface is equal to or greater than 60 degrees and smaller than 90 degrees; The semiconductor light emitting device according to claim 4 .

6. The substrate includes a substrate back surface facing opposite the substrate front surface, a first back surface electrode and a second back surface electrode provided on a back surface of the substrate; the light receiving element is electrically connected between the first back surface electrode and the second back surface electrode; The semiconductor light emitting device according to claim 1 .

7. The light receiving element includes a first light receiving electrode provided on a front surface of the light receiving element, a back surface of the light receiving element facing the opposite side to the front surface of the light receiving element, and a second light receiving electrode provided on the back surface of the light receiving element. The semiconductor light emitting device according to claim 6 .

8. The light receiving element includes a back surface of the light receiving element facing the opposite side to the front surface of the light receiving element, and a first light receiving electrode and a second light receiving electrode provided on the back surface of the light receiving element. The semiconductor light emitting device according to claim 6 .

9. the light-receiving submount is provided on the mounting surface and includes a first mounting electrode electrically connected to the first light-receiving electrode and a second mounting electrode electrically connected to the second light-receiving electrode; The semiconductor light emitting device according to claim 7 .

10. a first surface electrode provided on a surface of the substrate and electrically connected to the first back surface electrode; a second surface electrode provided on a surface of the substrate and electrically connected to the second back surface electrode; Including, the first mounting electrode is electrically connected to the first surface electrode; the second mounting electrode is electrically connected to the second surface electrode; The semiconductor light emitting device according to claim 9 .

11. the light-receiving submount is disposed so as to straddle the first surface electrode and the second surface electrode. The semiconductor light emitting device according to claim 10.

12. the light-receiving submount is disposed on the substrate surface so as not to overlap the first surface electrode and the second surface electrode when viewed in the thickness direction. The semiconductor light emitting device according to claim 10.

13. a first wire electrically connecting the first light receiving electrode and the second mounting electrode; The semiconductor light emitting device according to claim 10.

14. the light-receiving submount is integrally formed with the substrate; The semiconductor light emitting device according to claim 9 .

15. a first internal wiring and a second internal wiring provided inside the light-receiving submount and the substrate; the first internal wiring electrically connects the first mounting electrode and the first back surface electrode; the second internal wiring electrically connects the second mounting electrode and the second back surface electrode; The semiconductor light emitting device according to claim 14.

16. a third surface electrode provided on a surface of the substrate; a fourth surface electrode provided on the surface of the substrate and spaced apart from the third surface electrode; Including, The edge light emitting element is electrically connected to the third surface electrode. The semiconductor light emitting device according to claim 1 .

17. The substrate includes a substrate back surface facing opposite the substrate front surface, a third back surface electrode provided on a back surface of the substrate and electrically connected to the third front surface electrode; a fourth back surface electrode provided on a back surface of the substrate and electrically connected to the fourth front surface electrode; 17. The semiconductor light emitting device of claim 16, comprising:

18. The edge light emitting device is a light emitting element surface facing in the same direction as the substrate surface; a back surface of the light emitting element facing in a direction opposite to the front surface of the light emitting element; a first light-emitting electrode formed on a surface of the light-emitting element; A second light-emitting electrode formed on a rear surface of the light-emitting element; Including, the second light-emitting electrode is electrically connected to the third surface electrode; The semiconductor light emitting device according to claim 16.

19. a second wire electrically connecting the first light-emitting electrode and the fourth surface electrode; 20. The semiconductor light emitting device according to claim 18.

20. a light emitting submount disposed on the third surface electrode; The edge light emitting device is disposed on the light emitting submount.

20. The semiconductor light emitting device according to claim 18.

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