Semiconductor device, heat sink and method for manufacturing semiconductor device

Abstract

To provide a semiconductor device that efficiently cools semiconductor elements.SOLUTION: A semiconductor device comprises a semiconductor package, a heat dissipation member, and a heat sink provided between the semiconductor package and the heat dissipation member, the heat sink has a first groove formed on the top surface, a second groove formed on the bottom surface, a through hole connecting the first and second grooves, and first and second apertures formed on the end faces, and the first groove, the second groove, and the through hole form a flow path from the first aperture to the second aperture and are filled with a thermally conductive material.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device, a heat sink, and a method for manufacturing a semiconductor device. [Background technology]

[0002] In recent years, power conversion devices using power semiconductor elements, such as IGBTs (Insulated Gate Bipolar Transistors), have come into use, and there is a demand for efficient cooling of the power semiconductor elements.

[0003] Patent Document 1 describes an assembly structure for a power module in which a heat sink attached to a power module is assembled to a heat sink case via grease.

[0004] Patent Document 2 discloses a power conversion device including an electric component mounted on a circuit board, a heat sink having an integral component mounting section on which the electric component is mounted and a heat dissipation section for dissipating heat generated by the electric component, a box-shaped housing for accommodating the heat sink and the electric component, and a seal member interposed between the heat sink and the housing. The housing is made of a separate member from the heat sink. The document discloses that the heat sink is attached to the housing in a state in which the heat dissipation section is exposed to the outside through an opening formed in the housing.

[0005] Patent Document 3 discloses a switching device for the U, V, and W phases of a power conversion device. It also discloses that the switching device has connection ends between a first collector terminal and a second emitter terminal that are arranged on a first virtual straight line.

[0006] Patent Document 4 discloses a power conversion device in which a plurality of electronic components constituting a power conversion circuit and a cooler for cooling at least some of the electronic components are housed in a case. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2005-101259 A [Patent Document 2] JP 2018-191388 A [Patent Document 3] JP 2016-015863 A [Patent Document 4] JP 2011-182628 A Summary of the Invention [Problem to be solved by the invention]

[0008] In order to efficiently cool a semiconductor element, it is necessary to bond an insulating substrate on which the semiconductor element is mounted to a heat dissipation member in a state in which heat transfer efficiency is high.

[0009] An object of the present disclosure is to provide a semiconductor device that efficiently cools a semiconductor element. [Means for solving the problem]

[0010] According to one aspect of the present disclosure, there is provided a semiconductor device comprising a semiconductor package, a heat dissipation member, and a heat dissipation plate provided between the semiconductor package and the heat dissipation member, the heat dissipation plate having a groove on at least one of an upper surface or a lower surface, and a first opening and a second opening formed on an end surface, the groove forming a flow path from the first opening to the second opening, and filled with a thermally conductive material. Effect of the Invention

[0011] According to each embodiment of the present disclosure, a semiconductor device that efficiently cools a semiconductor element can be provided. [Brief description of the drawings]

[0012] [Figure 1] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment. [Diagram 2] FIG. 2 is an exploded perspective view of the semiconductor device of the first embodiment. [Diagram 3] FIG. 3 is a side view of the semiconductor device of the first embodiment. [Figure 4] FIG. 4 is a bottom view of the heat sink of the semiconductor device of the first embodiment. [Diagram 5] FIG. 5 is a top view of the heat sink of the semiconductor device of the first embodiment. [Figure 6] FIG. 6 is a perspective view of a heat sink of the semiconductor device according to the second embodiment. [Figure 7] FIG. 7 is a side view of the semiconductor device according to the second embodiment. [Figure 8] FIG. 8 is a bottom view of the heat sink of the semiconductor device according to the second embodiment. [Figure 9] FIG. 9 is a top view of a heat sink of the semiconductor device according to the second embodiment. [Figure 10] FIG. 10 is a perspective view of a heat sink of the semiconductor device according to the third embodiment. [Figure 11] FIG. 11 is an exploded perspective view of a heat sink of the semiconductor device according to the third embodiment. [Figure 12] FIG. 12 is a side view of the semiconductor device according to the third embodiment. [Figure 13] FIG. 13 is a top view of a plate-like member constituting a heat sink of the semiconductor device of the third embodiment. [Figure 14] FIG. 14 is a top view of a plate-like member constituting a heat sink of the semiconductor device of the third embodiment. [Figure 15] FIG. 15 is a bottom view of the heat sink of the semiconductor device of the third embodiment. [Figure 16] FIG. 16 is a top view of a heat sink of the semiconductor device of the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] Hereinafter, each embodiment of the present invention will be described with reference to the accompanying drawings. In addition, in the description of the specification and drawings relating to each embodiment, components having substantially the same or corresponding functional configurations may be given the same reference numerals to omit overlapping descriptions. In addition, for ease of understanding, the scale of each part in the drawings may differ from the actual scale. In directions such as parallel, right angle, orthogonal, horizontal, vertical, up and down, left and right, deviations are allowed to a degree that does not impair the effects of the embodiment. The shape of the corners is not limited to right angles, and may be rounded in an arch shape. Parallel, right angle, orthogonal, horizontal, and vertical may include approximately parallel, approximately right angle, approximately orthogonal, approximately horizontal, and approximately vertical.

[0014] <<First embodiment>> <Semiconductor device 1> <Configuration of Semiconductor Device 1> Fig. 1 is a perspective view of the semiconductor device 1 of the first embodiment. Fig. 2 is an exploded perspective view of the semiconductor device 1 of the first embodiment. Fig. 3 is a side view of the semiconductor device 1 of the first embodiment.

[0015] In addition, an XYZ Cartesian coordinate system may be set in the figure for convenience of explanation. For the coordinate axis perpendicular to the paper surface of the drawing, a cross in a circle on the coordinate axis indicates that the direction toward the back of the paper surface is positive, and a black circle in a circle indicates that the direction toward the front of the paper surface is positive. However, the coordinate system is defined for the purpose of explanation and does not limit the posture of the semiconductor device, etc. In this disclosure, unless otherwise specified, the X axis is a direction parallel to the mounting surface of the heat dissipation member 20, and the Y axis is a direction parallel to the mounting surface of the heat dissipation member 20 and perpendicular to the X axis. The Z axis is a direction perpendicular to the X axis and Y axis. The Z axis direction may be referred to as the up-down direction. For example, the +Z side may be referred to as the top, and the -Z side may be referred to as the bottom. A plan view seen from the +Z side may be referred to as a top view, and a plan view seen from the -Z side may be referred to as a bottom view.

[0016] The semiconductor device 1 includes a semiconductor package 10, a heat dissipation member 20, and a heat dissipation plate 30. Each of the components will be described.

[0017] [Semiconductor Package 10] The semiconductor package 10 is a package in which a semiconductor element such as a power semiconductor is sealed with resin. The semiconductor package 10 is connected to a heat dissipation member 20 via a heat sink 30 in order to dissipate heat generated by the semiconductor element inside.

[0018] [Heat dissipation member 20] The heat dissipation member 20 is a member that dissipates heat from the semiconductor package 10 to the outside. The heat dissipation member 20 is, for example, a heat dissipation plate made of metal or a liquid-cooled cooler in which a cooling liquid flows inside. The semiconductor package 10 is connected to the heat dissipation member 20 via the heat dissipation plate 30. The heat dissipation member 20 dissipates heat from the semiconductor package 10 by being connected to the semiconductor package 10 via the heat dissipation plate 30. By using, for example, a heat dissipation plate made of metal as the heat dissipation member 20, the heat dissipation member 20 dissipates heat by transferring heat from the mounting surface to the surface opposite to the mounting surface. By making the size of the heat dissipation member 20 larger than the semiconductor package 10, the heat dissipation area can be increased, improving the heat dissipation efficiency and increasing the efficiency of cooling the semiconductor package 10. In addition, by using, for example, a liquid-cooled cooler as the heat dissipation member 20, the efficiency of cooling the semiconductor package 10 can be increased by the liquid (for example, water, brine, antifreeze, coolant, etc.) that conducts inside the liquid-cooled cooler.

[0019] [Heat sink 30] The heat sink 30 is a member interposed between the semiconductor package 10 and the heat dissipation member 20. Fig. 4 is a bottom view of the heat sink 30 of the semiconductor device 1 of the first embodiment. Fig. 5 is a top view of the heat sink 30 of the semiconductor device 1 of the first embodiment. The heat sink 30 is a plate-shaped member.

[0020] The heat sink 30 is made of a material having high thermal conductivity. For example, the heat sink 30 is made of a metal such as copper or aluminum, or a resin. The heat sink 30 is created using, for example, a three-dimensional modeling device, that is, a so-called three-dimensional printer.

[0021] The heat sink 30 has grooves 31a1, 31a2, 31a3, and 31a4 on the lower surface 30S1, which extend in the X-axis direction and are formed at equal intervals in the Y-axis direction. The heat sink 30 has grooves 31b1, 31b2, 31b3, and 31b4 on the upper surface 30S2, which extend in the X-axis direction and are formed at equal intervals in the Y-axis direction. The groove 31b1 is formed between the grooves 31a1 and 31a2 in a top view. Similarly, the groove 31b2 is formed between the grooves 31a2 and 31a3 in a top view. The groove 31b3 is formed between the grooves 31a3 and 31a4 in a top view. The groove 31b4 is formed on the +Y side of the groove 31a4 in a top view.

[0022] The heat sink 30 also has through holes 31c1, 31c2, 31c3, 31c4, 31c5, 31c6, and 31c7 that penetrate between the upper surface 30S2 and the lower surface 30S1 of the heat sink 30. Each of the through holes 31c1, 31c2, 31c3, 31c4, 31c5, 31c6, and 31c7 is formed at an incline in a side view seen from the X-axis direction. In other words, each of the through holes 31c1, 31c2, 31c3, 31c4, 31c5, 31c6, and 31c7 is formed at an incline with respect to the upper surface 30S2 or the lower surface 30S1 of the heat sink 30.

[0023] The groove 31a1 is formed between the opening 30a and the through hole 31c1 formed on the end surface 30S on the +X side of the heat sink 30. The groove 31b1 is formed between the through hole 31c1 and the through hole 31c2. The groove 31a2 is formed between the through hole 31c2 and the through hole 31c3. The groove 31b2 is formed between the through hole 31c3 and the through hole 31c4. The groove 31a3 is formed between the through hole 31c4 and the through hole 31c5. The groove 31b3 is formed between the through hole 31c5 and the through hole 31c6. The groove 31a4 is formed between the through hole 31c6 and the through hole 31c7. The groove 31b4 is formed between the through hole 31c7 and the opening 30b formed on the end surface 30S on the +X side of the heat sink 30.

[0024] The through hole 31c1 is formed between the ends of the grooves 31a1 and 31b1 on the -X side. The through hole 31c2 is formed between the ends of the grooves 31b1 and 31a2 on the +X side. The through hole 31c3 is formed between the ends of the grooves 31a2 and 31b2 on the -X side. The through hole 31c4 is formed between the ends of the grooves 31b2 and 31a3 on the +X side. The through hole 31c5 is formed between the ends of the grooves 31a3 and 31b3 on the -X side. The through hole 31c6 is formed between the ends of the grooves 31b3 and 31a4 on the +X side. The through hole 31c7 is formed between the ends of the grooves 31a4 and 31b4 on the -X side.

[0025] In the semiconductor device 1, by sandwiching the heat sink 30 between the semiconductor package 10 and the heat dissipation member 20, a flow path can be formed through which liquid grease (thermally conductive material) passes from the opening 30a through the groove 31a1, the through hole 31c1, the groove 31b1, etc. to the opening 30b.

[0026] The dimensions of the groove are preferably 150 μm or more in width and 50 μm in depth. If the groove is narrower than 150 μm or shallower than 50 μm in depth, the filler contained in the grease (thermal conductive material) may become clogged.

[0027] <Assembly of Semiconductor Device 1> The assembly (manufacturing method) of the semiconductor device 1 will be described. First, the semiconductor package 10 is placed on the heat dissipation member 20 via the heat dissipation plate 30. In other words, the semiconductor package 10, the heat dissipation plate 30, and the heat dissipation member 20 are stacked in this order (stacking step). Then, grease (thermally conductive material) is injected from the opening 30a formed on the +X side end face of the heat dissipation plate 30. The injected grease (thermally conductive material) flows in order through the groove 31a1, the through hole 31c1, and the groove 31b1, and finally passes through the groove 31b4 and is discharged from the opening 30b (filling step). By confirming that the grease (thermally conductive material) is injected from the opening 30b and discharged from the opening 30b, the grease (thermally conductive material) can be filled inside the groove.

[0028] The opening 30a is an example of a first opening, and the opening 30b is an example of a second opening.

[0029] <Effects and Actions> The grease (thermally conductive material) passes through one path from the opening 30a and is discharged from the opening 30b, so that the grease (thermally conductive material) can be injected without excess or deficiency. Also, the grease (thermally conductive material) passes through one path from the opening 30a and is discharged from the opening 30b, so that the generation of voids can be suppressed. Therefore, the semiconductor device 1 of this embodiment can efficiently cool the semiconductor element.

[0030] The opening for injecting the grease (thermal conductive material) is not limited to opening 30a, and opening 30b may be used. The positions of opening 30a and opening 30b are not limited to end face 30S, and opening 30a and opening 30b may be formed on other end faces of heat sink 30. Opening 30a and opening 30b may be formed on other end faces of heat sink 230.

[0031] <<Second embodiment>> <Semiconductor device 101> <Configuration of Semiconductor Device 101> The semiconductor device 101 of the second embodiment will be described below. The semiconductor device 101 of the second embodiment is different from the semiconductor device 1 in the shape of the grooves in the heat dissipation member.

[0032] Fig. 6 is a perspective view of the heat sink 130 of the semiconductor device 101 of the second embodiment. Fig. 7 is a side view of the semiconductor device 101 of the second embodiment. Fig. 8 is a bottom view of the heat sink 130 of the semiconductor device 101 of the second embodiment. Fig. 9 is a top view of the heat sink 130 of the semiconductor device 101 of the second embodiment.

[0033] The semiconductor device 101 includes a semiconductor package 10, a heat dissipation member 20, and a heat dissipation plate 130. The heat dissipation plate 130 will be described.

[0034] [Heat sink 130] The heat sink 130 is a member interposed between the semiconductor package 10 and the heat dissipation member 20 .

[0035] The heat sink 130 is made of a material with high thermal conductivity. For example, the heat sink 130 is made of a metal such as copper or aluminum, or a resin. The heat sink 130 is created, for example, by using a three-dimensional modeling device, a so-called three-dimensional printer. The heat sink 130 is also created, for example, by forming grooves on the surface of a flat plate-shaped member by machining.

[0036] The heat sink 130 has a groove 131a on the lower surface 130S1. The groove 131a is a groove that is formed by folding back at the end in the X-axis direction between an opening 130a1 formed on an end surface 130S on the +X side of the heat sink 130 and an opening 130b1 formed on an end surface 130S on the +X side of the heat sink 130.

[0037] The heat sink 130 has a groove 131b on the upper surface 130S2. The groove 131b is a groove that is formed by folding back at the end in the X-axis direction between an opening 130a2 formed on the end surface 130S on the +X side of the heat sink 130 and an opening 130b2 formed on the end surface 130S on the +X side of the heat sink 130.

[0038] In the semiconductor device 101, by sandwiching the heat sink 130 between the semiconductor package 10 and the heat sink 20, a flow path can be formed through which the grease (thermally conductive material) passes from the opening 130a1 through the groove 131a to the opening 130b1. Also, by sandwiching the heat sink 130 between the semiconductor package 10 and the heat sink 20, a flow path can be formed through which the grease (thermally conductive material) passes from the opening 130a2 through the groove 131b to the opening 130b2.

[0039] <Assembly of the semiconductor device 101> The assembly of the semiconductor device 101 will be described. First, the semiconductor package 10 is placed on the heat dissipation member 20 via the heat dissipation plate 130. In other words, the semiconductor package 10, the heat dissipation plate 130, and the heat dissipation member 20 are stacked in order (stacking process). Then, grease (thermally conductive material) is injected from an opening 130a1 formed on the end face 130S on the +X side of the heat dissipation plate 130. The injected grease (thermally conductive material) flows through the groove 131a and is finally discharged from the opening 130b1. In addition, grease (thermally conductive material) is injected from an opening 130a2 formed on the end face 130S on the +X side of the heat dissipation plate 130. The injected grease (thermally conductive material) flows through the groove 131b and is finally discharged from the opening 130b2 (filling process). By checking that grease (thermal conductive material) is injected from opening 130a1 or opening 130a2 and discharged from opening 130b1 or opening 130b2, the grease (thermal conductive material) can be filled into the inside of the grooves.

[0040] The opening 130a1 is an example of a first opening, and the opening 130b1 is an example of a second opening. The opening 130a2 is an example of a first opening, and the opening 130b2 is an example of a second opening.

[0041] <Effects and Actions> The grease (thermally conductive material) is discharged from the opening 130b1 by passing through one path from the opening 130a1, so that the grease (thermally conductive material) can be injected without excess or deficiency. Furthermore, the grease (thermally conductive material) is discharged from the opening 130b1 by passing through one path from the opening 130a1, so that the occurrence of voids can be suppressed. Similarly, the grease (thermally conductive material) is discharged from the opening 130b2 by passing through one path from the opening 130a2, so that the grease (thermally conductive material) can be injected without excess or deficiency. Furthermore, the grease (thermally conductive material) is discharged from the opening 130b2 by passing through one path from the opening 130a2, so that the occurrence of voids can be suppressed. Therefore, the semiconductor device 1 of this embodiment can efficiently cool the semiconductor element.

[0042] Furthermore, by providing independent grooves on both sides of the heat sink 130, the area over which the grease (thermal conductive material) filled in the grooves comes into contact with the semiconductor package 10 or the heat sink 20 can be increased.

[0043] In the heat sink 130 of the second embodiment, the grooves are not limited to being provided on both the upper surface 130S2 and the lower surface 130S1. For example, the groove 131a may be provided on one surface (e.g., the lower surface 130S1) and no groove may be provided on the other surface (e.g., the upper surface 130S2). Similarly, the groove 131b may be provided on one surface (e.g., the upper surface 130S2) and no groove may be provided on the other surface (e.g., the lower surface 130S1).

[0044] The opening into which the grease (thermal conductive material) is injected is not limited to opening 130a1 or opening 130a2, and the grease may be injected from opening 130b1 or opening 130b2. The positions of opening 130a1, opening 130a2, opening 130b1, and opening 130b2 are also not limited to end face 130S, and opening 130a1, opening 130a2, opening 130b1, and opening 130b2 may be formed on another end face of heat sink 130. Opening 130a1, opening 130a2, opening 130b1, and opening 130b2 may be formed on another end face of heat sink 130.

[0045] <<Third embodiment>> <Semiconductor device 201> <Configuration of Semiconductor Device 201> A semiconductor device 201 according to the third embodiment will be described. The semiconductor device 201 according to the third embodiment is different from the semiconductor device 1 in the shape of the grooves in the heat dissipation member. Also, the configuration of the heat dissipation member is different.

[0046] FIG. 10 is a perspective view of the heat sink 230 of the semiconductor device 201 of the third embodiment. FIG. 11 is an exploded perspective view of the heat sink 230 of the semiconductor device 201 of the third embodiment. FIG. 12 is a side view of the semiconductor device 201 of the third embodiment. FIG. 13 is a top view of a plate-shaped member 230A constituting the heat sink 230 of the semiconductor device 201 of the third embodiment. FIG. 14 is a top view of a plate-shaped member 230B constituting the heat sink 230 of the semiconductor device 201 of the third embodiment. FIG. 15 is a bottom view of the heat sink 230 of the semiconductor device 201 of the third embodiment. FIG. 16 is a top view of the heat sink 230 of the semiconductor device 201 of the third embodiment.

[0047] The semiconductor device 201 includes a semiconductor package 10, a heat dissipation member 20, and a heat dissipation plate 230. The heat dissipation plate 230 will be described.

[0048] [Heat sink 230] The heat sink 230 is a member interposed between the semiconductor package 10 and the heat dissipation member 20 .

[0049] The heat sink 230 is made of a material with high thermal conductivity. For example, the heat sink 230 is made of a metal such as copper or aluminum, or a resin. The heat sink 230 is created, for example, by using a three-dimensional modeling device, a so-called three-dimensional printer. The heat sink 230 is also created, for example, by machining a flat plate-shaped member to form a groove penetrating the flat plate-shaped member.

[0050] The heat dissipation plate 230 is composed of two plate-shaped members, a plate member 230A and a plate member 230B. The heat dissipation plate 230 is composed by laminating the plate member 230A and the plate member 230B.

[0051] The plate-like member 230A has through grooves 232a1, 232a2, 232a3, 232a4, 232a5, and 232a6 that penetrate from the upper surface to the lower surface. Each of the through grooves 232a1, 232a2, 232a3, 232a4, 232a5, and 232a6 extends in the X-axis direction and has an L-shape that extends in the +Y direction at the end on the -X side.

[0052] The plate-like member 230B has through grooves 232b1, 232b2, 232b3, 232b4, 232b5, and 232b6 that penetrate from the upper surface to the lower surface. Each of the through grooves 232b1, 232b2, 232b3, 232b4, 232b5, and 232b6 extends in the X-axis direction and has an L-shape that extends in the +Y direction at the end on the +X side.

[0053] The plate-shaped member 230B is laminated and attached to the +Z side of the plate-shaped member 230A. In the heat dissipation plate 230 formed by laminating the plate-shaped member 230A and the plate-shaped member 230B, the through groove 232b1 is located between the through groove 232a1 and the through groove 232a2. Therefore, in the heat dissipation plate 230, the groove 231a1 opened in the -Z direction is formed in the portion of the through groove 232a1. That is, the groove 231a1 is formed in the lower surface 230S1 of the heat dissipation plate 230. Also, the groove 231b1 opened in the +Z direction is formed in the portion of the through groove 232b1. The groove 231a1 and the groove 231b1 are connected by the opening 231c1, which is the portion where the through groove 232a1 and the through groove 232b1 overlap in a plan view. The through groove 232a1 is formed up to the end surface 230S on the +X side of the heat dissipation plate 230. Therefore, the groove 231a1 has an opening 230a on the end surface 230S of the heat sink 230 on the +X side.

[0054] Similarly, through groove 232a2, through groove 232a3, through groove 232a4, through groove 232a5, and through groove 232a6 become groove 231a2, groove 231a3, groove 231a4, groove 231a5, and groove 231a6, respectively, opened in the -Z direction. Also, through groove 232b2, through groove 232b3, through groove 232b4, through groove 232b5, and through groove 232b6 become groove 231b2, groove 231b3, groove 231b4, groove 231b5, and groove 231b6, respectively, opened in the +Z direction.

[0055] Further, the groove 231b1 and the groove 231a2 are connected by an opening 231c2 which is a portion where the through groove 232b1 and the through groove 232a2 overlap in a plan view. Similarly, the groove 231a2 and the groove 231b2 are connected by an opening 231c3 which is a portion where the through groove 232a2 and the through groove 232b2 overlap in a plan view. The groove 231b2 and the groove 231a3 are connected by an opening 231c4 which is a portion where the through groove 232b2 and the through groove 232a3 overlap in a plan view. The groove 231a3 and the groove 231b3 are connected by an opening 231c5 which is a portion where the through groove 232a3 and the through groove 232b3 overlap in a plan view. The groove 231b3 and the groove 231a4 are connected by an opening 231c6, which is a portion where the through groove 232b3 and the through groove 232a4 overlap in a plan view. The groove 231a4 and the groove 231b4 are connected by an opening 231c7, which is a portion where the through groove 232a4 and the through groove 232b4 overlap in a plan view. The groove 231b4 and the groove 231a5 are connected by an opening 231c8, which is a portion where the through groove 232b4 and the through groove 232a5 overlap in a plan view. The groove 231a5 and the groove 231b5 are connected by an opening 231c9, which is a portion where the through groove 232a5 and the through groove 232b5 overlap in a plan view. The grooves 231b5 and 231a6 are connected by an opening 231c10 which is an overlapping portion of the through groove 232b5 and the through groove 232a6 in a plan view. The grooves 231a6 and 231b6 are connected by an opening 231c11 which is an overlapping portion of the through groove 232a6 and the through groove 232b6 in a plan view.

[0056] The through groove 232b6 is formed up to the end face 230S on the +X side of the heat dissipation plate 230. Therefore, the groove 231b6 has an opening 230b at the end face 230S of the heat dissipation plate 230 on the +X side.

[0057] <Assembly of the semiconductor device 201> The assembly of the semiconductor device 201 will be described. First, the semiconductor package 10 is placed on the heat dissipation member 20 via the heat dissipation plate 230. In other words, the semiconductor package 10, the heat dissipation plate 230, and the heat dissipation member 20 are stacked in order (stacking step). Then, grease (thermally conductive material) is injected from the opening 230a formed in the end face 230S on the +X side of the heat dissipation plate 230. The injected grease (thermally conductive material) flows from the groove 231a1 and is finally discharged from the opening 230b (filling step). By confirming that the grease (thermally conductive material) is injected from the opening 230a and discharged from the opening 230b, the grease (thermally conductive material) can be filled inside the groove.

[0058] The opening 230a is an example of a first opening, and the opening 230b is an example of a second opening.

[0059] <Effects and Actions> The grease (thermally conductive material) passes through one path from the opening 230a and is discharged from the opening 230b, so that the grease (thermally conductive material) can be injected without excess or deficiency. Also, the grease (thermally conductive material) passes through one path from the opening 230a and is discharged from the opening 230b, so that the generation of voids can be suppressed.

[0060] Furthermore, by combining plate-like member 230A and plate-like member 230B to form heat dissipation plate 230, the heat dissipation member can be easily manufactured.

[0061] The opening for injecting the grease (thermal conductive material) is not limited to opening 230a, and the grease may be injected from opening 230b. The positions of opening 230a and opening 230b are also not limited to end surface 230S, and opening 230a and opening 230b may be formed on another end surface of heat sink 230. Opening 230a and opening 230b may be formed on another end surface of heat sink 230.

[0062] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0063] 1, 101, 201 Semiconductor device 10 Semiconductor Package 20 Heat dissipation material 30, 130, 230 heat sink 30S1, 130S1, 230S1 bottom side 30S2, 130S2, 230S2 top surface 31a1, 31a2, 31a3, 31a4 groove 31b1, 31b2, 31b3, 31b4 groove 131a, 131b groove 231a1, 231a2, 231a3, 231a4, 231a5, 231a6 groove 231b1, 231b2, 231b3, 231b4, 231b5, 231b6 groove

Claims

1. The semiconductor package includes a heat dissipation member, and a heat dissipation plate provided between the semiconductor package and the heat dissipation member, the heat sink includes a first groove formed on an upper surface, a second groove formed on a lower surface, a through hole connecting the first groove and the second groove, and a first opening and a second opening formed on an end surface; The first groove, the second groove, and the through hole form a flow path from the first opening to the second opening, and are filled with a thermally conductive material. Semiconductor device.

2. Each of the first groove and the second groove has a width of 150 μm or more and a depth of 50 μm or more. The semiconductor device according to claim 1 .

3. A heat sink provided between a semiconductor package and a heat dissipation member of a semiconductor device, the heat sink comprising: a first groove formed on an upper surface, a second groove formed on a lower surface, a through hole connecting the first groove and the second groove, and a first opening and a second opening formed on an end surface, The first groove, the second groove, and the through hole form a flow path from the first opening to the second opening, and are filled with a thermally conductive material. Heat sink.

4. Each of the first groove and the second groove has a width of 150 μm or more and a depth of 50 μm or more. The heat sink according to claim 3 .

5. A method for manufacturing a semiconductor device comprising: a semiconductor package; a heat dissipation member; and a heat dissipation plate provided between the semiconductor package and the heat dissipation member, the heat dissipation plate comprising a first groove formed on an upper surface, a second groove formed on a lower surface, a through hole connecting the first groove and the second groove, and a first opening and a second opening formed on an end surface, the first groove, the second groove, and the through hole forming a flow path from the first opening to the second opening, a step of stacking the semiconductor package, the heat sink, and the heat dissipation member in this order; and injecting a thermally conductive material from the first opening of the heat sink to fill the first groove, the second groove, and the through hole with the thermally conductive material. A method for manufacturing a semiconductor device.

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