Semiconductor device

Abstract

To improve the conduction loss in a semiconductor device including a first gate electrode and a second gate electrode.SOLUTION: A semiconductor device 101 includes a gate electrode embedded in each of a plurality of first trenches through an insulating film. The gate electrode includes a first gate electrode 12 electrically connected to a first gate pad 30 and a second gate electrode 15 electrically connected to a second gate pad 31. A charge period and a discharge period of gate capacitance parasitic on the second gate electrode 15 are shorter than a charge period and a discharge period of gate capacitance parasitic on the first gate electrode 12, respectively.SELECTED DRAWING: Figure 1

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