Device for processing substrates and method for processing substrates

Abstract

To provide technology for using magnetic levitation to transport substrates while suppressing an increase in the footprint of facilities that are arranged.SOLUTION: A device for processing substrates comprises a stage on which a substrate is placed in a substrate transfer chamber having a floor where a first magnet is disposed, a travel plate, and a second magnet having a repulsive force acting between the first magnet and itself. A substrate transfer module constituted to be movable by magnetic levitation is moved upward with respect to a plurality of substrate processing chambers which are provided on the upper face side of the substrate transfer chamber, and the opening of which opens toward the substrate transfer chamber, and the stage having the substrate placed thereon is thereby inserted into the substrate processing chambers through the openings, in which the substrate is processed by the travel plate while the openings are closed. The inside of the substrate transfer chamber is constructed so that the stage is capable of moving other substrate transfer modules beneath the substrate transfer module inserted into the substrate processing chamber.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to an apparatus for processing a substrate and a method for processing a substrate. [Background technology]

[0002] For example, in an apparatus for performing processing on a semiconductor wafer (hereinafter also referred to as a "wafer"), which is a substrate, the wafer is transported between a carrier that contains the wafer and a wafer processing chamber in which the processing is performed. Wafer transport mechanisms of various configurations are used for transporting the wafer.

[0003] For example, Patent Document 1 describes a magnetic levitation transport device equipped with a transport platform that transports objects such as semiconductor wafers by floating and running along a transport path while maintaining a non-contact state with respect to the track and partition walls due to the action of magnetic force from a magnetic pole. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 7-117849 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique for transporting substrates using magnetic levitation while minimizing an increase in the footprint of the equipment in which it is deployed. [Means for solving the problem]

[0006] 1. The disclosed apparatus for processing a substrate 、 a substrate transfer chamber having a floor portion on which a first magnet is provided; a substrate transfer module including a stage on which the substrate is placed, a traveling plate disposed on a lower side of the stage, and a second magnet that generates a repulsive force between the first magnet and the second magnet, the substrate transfer module being movable within the substrate transfer chamber by magnetic levitation using the repulsive force; An opening is provided on the upper surface side of the substrate transfer chamber for processing the substrate, the opening being large enough to allow at least a part of the stage on which the substrate is placed to pass through, and opens toward the inside of the substrate transfer chamber. Multiple a substrate processing chamber; before By moving the substrate transfer module upward, the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening, and the substrate is processed while the opening is closed by the running plate. R, The interior of the substrate transfer chamber is configured at a height that allows other substrate transfer modules to move below the substrate transfer module when the stage is inserted into the substrate processing chamber. . The apparatus for processing a substrate according to the second disclosure includes: a substrate transfer chamber having a floor portion on which a first magnet is provided; a substrate transfer module including a stage on which the substrate is placed, a traveling plate disposed on a lower side of the stage, and a second magnet that generates a repulsive force between the first magnet and the second magnet, the substrate transfer module being movable within the substrate transfer chamber by magnetic levitation using the repulsive force; a substrate processing chamber that is provided on an upper surface side of the substrate transfer chamber for processing the substrate, the opening being large enough to allow at least a part of the stage on which the substrate is placed to pass and opening into the substrate transfer chamber; the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening by moving the substrate transfer module upward, and the substrate is processed in a state in which the opening is closed by the traveling plate; The substrate transfer module includes a heating unit provided on the stage for heating the substrate, and a heating power supply unit for supplying heating power to the heating unit. An apparatus for processing a substrate according to a third disclosure includes: a substrate transfer chamber having a floor portion on which a first magnet is provided; a substrate transfer module including a stage on which the substrate is placed, a traveling plate disposed on a lower side of the stage, and a second magnet that generates a repulsive force between the first magnet and the second magnet, the substrate transfer module being movable within the substrate transfer chamber by magnetic levitation using the repulsive force; a substrate processing chamber that is provided on an upper surface side of the substrate transfer chamber for processing the substrate, the opening being large enough to allow at least a part of the stage on which the substrate is placed to pass and opening into the substrate transfer chamber; the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening by moving the substrate transfer module upward, and the substrate is processed in a state in which the opening is closed by the traveling plate; The substrate transport module has a plurality of lift pins that are configured to be freely protruding and retracting from the substrate loading surface on the stage in order to transfer the substrate between an external substrate transport mechanism that loads and unloads the substrate into and from the substrate transport chamber. Effect of the Invention

[0007] According to the present disclosure, it is possible to transport substrates using magnetic levitation while minimizing an increase in the footprint of the equipment to be deployed. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view of a wafer processing apparatus according to the present disclosure. [Diagram 2] FIG. 2 is a vertical sectional side view of the wafer processing apparatus. [Diagram 3] FIG. 2 is a vertical sectional front view of the wafer processing apparatus. [Figure 4] 2 is a schematic diagram of a floor portion of a vacuum transfer chamber and a wafer transfer module. FIG. [Diagram 5] FIG. 4 is an enlarged vertical cross-sectional side view of the vacuum transfer chamber. [Figure 6] 6A to 6C are first operational views relating to the operation of the wafer transfer module. [Figure 7] 13 is a second operational diagram relating to the operation of the wafer transfer module. FIG. [Figure 8] 13 is a first operational diagram relating to the operation of the wafer transfer module according to another embodiment of the present invention. FIG. [Figure 9] 13 is a second operational diagram relating to the operation of the wafer transfer module according to another embodiment of the present invention. FIG. [Figure 10] FIG. 2 is an explanatory diagram of an integrated wafer transfer module. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an overall configuration of a wafer processing apparatus 100, which is an apparatus for processing a substrate according to an embodiment of the present disclosure, will be described with reference to FIGS. 1 to 3. FIG. 1 to 3 show a multi-chamber type wafer processing apparatus 100 equipped with a plurality of wafer processing chambers 110 which are substrate processing chambers for processing wafers W. As shown in Fig. 1, the wafer processing apparatus 100 is equipped with a load port 141, an atmospheric transfer chamber 140, a load lock chamber 130, a vacuum transfer chamber 120, and the plurality of wafer processing chambers 110. In the following description, the side where the load port 141 is provided is referred to as the front side.

[0010] In the wafer processing apparatus 100, a load port 141, an atmospheric transfer chamber 140, a load lock chamber 130, and a vacuum transfer chamber 120 are arranged in the front-rear direction from the front side in this order. In addition, a plurality of wafer processing chambers 110 are arranged side by side on the upper surface side of the vacuum transfer chamber 120.

[0011] The load port 141 is configured as a mounting stage on which a carrier C that accommodates a wafer W to be processed is mounted. As the carrier C, for example, a front opening unified pod (FOUP) or the like can be used. The atmospheric transfer chamber 140 has an atmospheric pressure atmosphere, and for example, a downflow of clean air is formed. A wafer transfer mechanism (not shown) for transferring the wafer W is provided inside the atmospheric transfer chamber 140. The wafer transfer mechanism in the atmospheric transfer chamber 140 transfers the wafer W between the carrier C and the load lock chamber 130.

[0012] The load lock chamber 130 is provided between the vacuum transfer chamber 120 and the atmospheric transfer chamber 140. The load lock chamber 130 has a stage 131 on which the loaded wafer W is placed. The load lock chamber 130 is configured to be able to switch between an atmospheric pressure atmosphere and a vacuum atmosphere. The load lock chamber 130 and the atmospheric transfer chamber 140 are connected via a gate valve 133. The load lock chamber 130 and the vacuum transfer chamber 120 are also connected via a gate valve 132. The load lock chamber 130 is further provided with a wafer transfer mechanism 160 for transferring the wafer W between the load lock chamber 130 and the vacuum transfer chamber 120, the configuration of which will be described later.

[0013] The vacuum transfer chamber 120 is depressurized to a vacuum atmosphere by a vacuum exhaust mechanism (not shown). A wafer transfer module 20 for transferring a wafer W between the stage 131 and each wafer processing chamber 110 is provided inside the vacuum transfer chamber 120. A detailed configuration of the wafer transfer module 20 will be described later. The vacuum transfer chamber 120 corresponds to a substrate transfer chamber in this embodiment.

[0014] 1 to 3, the vacuum transfer chamber 120 is configured with a housing that is long in the front-rear direction and has a rectangular shape in a plan view. In the wafer processing apparatus 100 of this example, a total of eight wafer processing chambers 110 are provided on the upper surface side of the vacuum transfer chamber 120. These wafer processing chambers 110 are arranged in two rows of four on the left and right as viewed from the front side.

[0015] Each wafer processing chamber 110 is depressurized to a vacuum atmosphere by a vacuum exhaust mechanism (not shown), and a predetermined process is performed on the wafer W inside the chamber. Examples of the process performed on the wafer W include an etching process, a film forming process, a cleaning process, and an ashing process. When the process performed on the wafer W uses a process gas, the wafer processing chamber 110 is provided with a process gas supply unit 112 constituted by a shower head or the like (FIGS. 2 and 3).

[0016] Furthermore, on the underside of the position where each wafer processing chamber 110 is connected to the upper surface of the vacuum transfer chamber 120, a circular opening 111 is formed that penetrates the ceiling of the vacuum transfer chamber 120 and communicates with the internal space of the vacuum transfer chamber 120. On the other hand, no gate valve or the like for opening and closing the opening 111 is provided between each wafer processing chamber 110 and the vacuum transfer chamber 120. The wafer processing chamber 110 corresponds to the substrate processing chamber in this embodiment.

[0017] In the wafer processing apparatus 100 having the schematic configuration described above, the wafer transfer module 20 is configured to be movable within the vacuum transfer chamber 120 by magnetic levitation. The wafer transfer module 20 not only transfers the wafer W, but also has a function of supporting the wafer W loaded into the wafer processing chamber 110 during the processing of the wafer W, by being connected to the wafer processing chamber 110. The following is a detailed description of the configuration of devices related to the transfer and processing of the wafer W using the wafer transfer module 20.

[0018] As shown in FIGS. 2 and 3, the wafer transfer module 20 includes a stage 21 on which the wafer W is placed, and a traveling plate 22 disposed below the stage 21. For example, the stage 21 is formed in a flat disk shape, and the upper surface thereof serves as a mounting surface for mounting the wafer W to be transported and processed. The diameter of the stage 21 is smaller than the aforementioned opening 111 formed on the wafer processing chamber 110 side, and the stage 21 can be inserted into the wafer processing chamber 110 through the opening 111. The diameter of the opening 111 only needs to be larger than the diameter of the wafer W, and the size of the opening 111 only needs to allow a part of the stage 21 on which the wafer W is placed to be inserted into the opening 111 .

[0019] 6 and other figures, a heating unit 31 may be provided inside the stage 21 to heat the wafer W placed on the stage 21 when processing is performed. Electric power is supplied to the heating unit 31 from a battery 32, which is a heating power supply unit provided in the wafer transfer module 20, causing the stage 21 to generate heat.

[0020] For example, the battery 32 controls the increase / decrease of power supplied to the heating unit 31 and the supply / stop control by a power supply control unit (not shown) provided in the wafer transfer module 20. This power supply control unit may be configured to receive a control signal related to the power supply control via wireless communication between the battery 32 and the control unit 150 (described later). In addition, in the case where the wafer W is heated by a heating lamp or an LED (light emitting diode) provided on the wafer processing chamber 110 side, the heating unit 31 in the stage 21 does not need to be provided.

[0021] A disk-shaped running plate 22 is provided on the lower side of the stage 21 so as to support the stage 21 from the lower surface side. The diameter of the running plate 22 is configured to be larger than the diameter of the stage 21, and the opening 111 of the wafer processing chamber 110 can be closed. An O-ring 23 is provided on the upper surface of the traveling plate 22 so as to surround the stage 21 (the opening 111 on the wafer processing chamber 110 side). The O-ring 23 plays a role in keeping the inside of the wafer processing chamber 110 airtight when the aforementioned opening 111 is closed by the traveling plate 22.

[0022] 6 and other enlarged views, alignment pins 33 may be provided on the upper surface of the traveling plate 22. In this case, the wafer transfer module 20 is aligned so that the alignment pins 33 are inserted into alignment holes 34 provided on the ceiling surface side of the vacuum transfer chamber 120, and then the stage 21 is inserted into the wafer processing chamber 110. This alignment allows the wafer W to be processed at a preset correct position. The running plate 22 is not limited to the example formed of a plate-shaped member supporting the stage 21 from the lower surface side. For example, the running plate 22 may be formed by providing an annular member that spreads out like a flange from the side peripheral surface of the lower side of the stage 21.

[0023] As shown in Fig. 4, a plurality of floor side coils 15 are arranged in the floor portion 10 of the vacuum transfer chamber 120. The floor side coils 15 generate a magnetic field when power is supplied from a power supply unit (not shown). From this point of view, the floor side coils 15 correspond to the first magnet of this embodiment.

[0024] Meanwhile, a plurality of module side coils 35 are also arranged inside the wafer transport module 20. A repulsive force acts between the module side coils 35 and the magnetic field generated by the floor surface side coils 15. This action allows the wafer transport module 20 to be magnetically levitated relative to the floor surface section 10. In addition, by adjusting the strength and position of the magnetic field generated by the floor surface side coils 15, it is possible to move the wafer transport module 20 in a desired direction on the floor surface section 10, adjust the amount of levitation, and adjust the orientation of the wafer transport module 20. Note that a configuration may be adopted in which a permanent magnet is auxiliary provided inside the wafer transport module 20 together with the plurality of module side coils 35.

[0025] The module side coil 35 provided in the wafer transfer module 20 corresponds to the second magnet in this embodiment. Power is supplied to the module side coil 35 from a battery 32, which is a magnet power supply unit provided in the wafer transfer module 20, and the module side coil 35 functions as an electromagnet. For convenience of illustration, in Figs. 6 and 7, the same battery 32 that supplies power to the heating unit 31 described above is used to supply power to the module side coil 35. Unlike this example, the heating power supply unit and the magnet power supply unit may be configured by different batteries 32.

[0026] For example, for each module side coil 35, an increase / decrease in power supplied to the module side coil 35 and power supply / stop control are performed by a power supply control unit (not shown) provided in the wafer transfer module 20. At this time, the power supply control unit may be configured to obtain a control signal related to power supply control by wireless communication with the control unit 150 described later.

[0027] Further, within the vacuum transfer chamber 120 , a plurality of lifting mechanisms 4 for performing the operation of inserting the stage 21 into the wafer processing chamber 110 through the opening 111 are provided corresponding to each wafer processing chamber 110 . As shown in Figures 2 and 3, the lifting mechanism 4 includes a support plate 41 that supports the wafer transfer module 20 from the bottom side, a base portion 45 that is arranged on the underside of the floor portion 10 and has a slider 44 that moves up and down along a rail (not shown), and a support portion 42 that supports the support plate 41 and passes through the vacuum transfer chamber 120 and is connected to the slider 44.

[0028] The wafer transfer module 20 is moved onto the support plate 41 and the slider 44 is moved upward, whereby the wafer transfer module 20 supported by the support plate 41 is lifted up towards the wafer processing chamber 110 . In addition, an expandable bellows 43 is provided between the lower surface of the floor portion 10 and the upper surface of the slider 44 so as to surround the support portion 42 that penetrates the floor portion 10. The bellows 43 prevents gas from entering from the external atmosphere, and keeps the inside of the vacuum transfer chamber 120 airtight.

[0029] As shown in Figures 2 and 3, the internal space of the vacuum transfer chamber 120 is configured with a height dimension that allows other wafer transfer modules 20 to move below it when the support plate 41 is raised and the stage 21 is inserted into the wafer processing chamber 110.

[0030] 1 and 2, for example, a cleaning chamber 123 is connected to the rear end side of the vacuum transfer chamber 120 via a gate valve 124. The cleaning chamber 123 is configured to be able to accommodate the wafer transfer module 20. The wafer transfer module 20, on which reaction products and the like have adhered to the stage 21 as a result of the processing of the wafer W, is moved into the cleaning chamber 123, and a cleaning gas is supplied toward the stage 21. As a result, cleaning is performed to remove the reaction products. Note that, instead of the cleaning chamber 123, a wafer transfer module exchange chamber or a stage exchange chamber in which a plurality of wafer transfer modules 20 or stages 21, or both, are stocked may be connected to the vacuum transfer chamber 120.

[0031] Furthermore, a closing module 50 is provided inside the vacuum transfer chamber 120 for closing the opening 111 of the wafer processing chamber 110 during periods when the wafer W is not being processed. The closing module 50 is configured similarly to the wafer transfer module 20 described above, except that it does not include a stage 21. That is, the closing module 50 includes a module side coil 35 inside the traveling plate 22, and is magnetically levitated by utilizing the repulsive force acting between the module side coil 35 and the floor surface side coil 15 of the floor surface portion 10, and is configured to be movable inside the vacuum transfer chamber 120.

[0032] The closing module 50 moves upward by utilizing the lifting mechanism 4 described above, and closes the opening 111 of the wafer processing chamber 110 by abutting the running plate 22 against the ceiling surface of the vacuum transfer chamber 120 in which the opening 111 is formed. The O-ring 23 and the alignment pin 33 described above may be provided on the upper surface of the running plate 22.

[0033] The number of closing modules 50 arranged in the vacuum transfer chamber 120 may be less than the number of wafer processing chambers 110 provided on the upper surface side of the vacuum transfer chamber 120. When a wafer processing chamber 110 that is not processing a wafer W occurs due to the processing schedule of the wafer W, it is sufficient to arrange a sufficient number of closing modules 50 to close the opening 111 of that wafer processing chamber 110.

[0034] 1, for example, a retreat chamber 121 for retreating the closing module 50 during periods when the closing module 50 is not in use may be connected to the rear end side of the vacuum transfer chamber 120. There are no particular limitations on the configuration of the retreat chamber 121 as long as it has a space for accommodating the retreated closing module 50. In addition, the internal spaces of the closing module 50 and the vacuum transfer chamber 120 may be in constant communication with each other, and it is not essential that the internal spaces of both can be separated by using a gate valve or the like.

[0035] 2 and 5, a mechanism for transferring the wafer W to and from the load lock chamber 130 will be described. For example, a wafer transfer mechanism 160 for transferring the wafer W between a stage 131 in the load lock chamber 130 and a stage 21 on the wafer transfer module 20 side is provided on the ceiling of the load lock chamber 130.

[0036] 2, the wafer transfer mechanism 160 of this example includes an arm unit 162 that is configured to be rotatable about a central axis, movable up and down, and extendable and retractable, and an end effector 163 provided on the tip side of the arm unit 162. A Bernoulli chuck 161 that can lift and transfer the wafer W in a non-contact state is provided on the bottom surface of the end effector 163. Alternatively, the end effector 163 may be provided with an edge clamp (not shown) instead of the Bernoulli chuck 161, and the edge clamp may be brought into contact with the side surface of the wafer W to sandwich and hold the wafer W during transport. The wafer transport mechanism 160 corresponds to a substrate transport mechanism provided outside the vacuum transport chamber 120.

[0037] 5, stage 21 of wafer transfer module 20 is provided with a plurality of lift pins 241 that are configured to be capable of projecting and retracting from the upper surface of stage 21, which is the mounting surface, in order to transfer wafer W between it and wafer transfer mechanism 160. A lift mechanism that raises and lowers lift pins 241 is provided within stage 21 in order to perform the projecting and retracting operation.

[0038] The lifting mechanism of the lifting pins 241 includes a lifting coil 242, which is a third magnet that exerts a repulsive force against the magnetic field generated by the floor surface side coil 15 provided on the floor surface portion 10. The lifting pins 241 are raised and lowered by changing the levitation amount of the magnetic levitation using the repulsive force. This operation causes the lifting pins 241 to protrude and retract from the stage 21, and the wafer W is transferred between the stage 21 and the wafer transfer mechanism 160. The stage 21 is provided with a battery (not shown) that supplies power to the lifting coil 242, and a power supply control unit that controls the power supply, as in the case of the module side coil 35 described above. The method for realizing the lifting and lowering operation of the lift pins 241 is not limited to using magnetic levitation. For example, a mechanical lifting mechanism may be provided within the stage 21, and the lift pins 241 may be raised and lowered using a motor or the like.

[0039] The wafer processing apparatus 100 having the above-mentioned configuration includes a control unit 150 that controls each floor surface side coil 15, the lifting mechanism 4, the wafer processing chamber 110, etc. The control unit 150 is configured by a computer having a CPU and a storage unit, and controls each part of the floor surface unit 10, etc. The storage unit stores a program in which a group of steps (commands) for controlling the operation of the wafer transfer module 20 and the wafer processing chamber 110 are organized. This program is stored in a storage medium such as a hard disk, a compact disk, a magnet optical disk, a memory card, etc., and is installed in the computer from there.

[0040] Next, an example of the operation of the wafer processing apparatus 100 will be described. First, a carrier C containing a wafer W to be processed is placed on the load port 141, and the wafer W is removed from the carrier C by a wafer transfer mechanism (not shown) in the atmospheric transfer chamber 140. Next, when the gate valve 133 is opened, the wafer transfer mechanism enters the load lock chamber 130 and places the wafer W on the stage 131. Thereafter, when the wafer transfer mechanism retreats from the load lock chamber 130, the gate valve 133 is closed, and the atmosphere in the load lock chamber 130 is switched from the atmospheric atmosphere to a vacuum atmosphere.

[0041] When the inside of the load lock chamber 130 becomes a vacuum atmosphere, the gate valve 132 is opened, and the wafer W is transferred into the vacuum transfer chamber 120 by the wafer transfer mechanism 160. In the vacuum transfer chamber 120, one wafer transfer module 20 is waiting near the connection position of the load lock chamber 130. Then, the lift pins 241 are lifted by magnetic levitation using a magnetic field generated by the floor surface side coil 15 provided on the floor surface part 10. At this time, the module side coil 35 is turned off so as not to be influenced by the magnetic field generated to perform the lifting and lowering operation of the lift pins 241. Therefore, the wafer transfer module 20 is placed on the upper surface of the floor surface part 10 of the vacuum transfer chamber 120.

[0042] By the above-mentioned operation, the tip portions of the lift pins 241 protrude above the mounting surface of the wafer W, and the wafer W is transferred from the wafer transfer mechanism 160 to the lift pins 241. Thereafter, the lift pins 241 are lowered, and the wafer W is transferred from the lift pins 241 to the stage 21, whereby the wafer W is placed on a predetermined mounting surface. Then, when the wafer transfer mechanism 160 retreats from the vacuum transfer chamber 120, the gate valve 132 is closed. When adopting a method of lifting the wafer W by bringing the Bernoulli chuck 161 close to the upper surface of the wafer W, it is not essential to transfer the wafer W via the lift pins 241. The wafer W may be transferred directly between the wafer transfer mechanism 160 and the mounting surface of the stage 21.

[0043] Once the wafer W has been handed over to the wafer transport module 20, the module side coil 35 installed in the wafer transport module 20 is turned on, and the wafer transport module 20 is moved by magnetic levitation toward the wafer processing chamber 110 where the wafer W is processed. When processing a wafer W in the wafer processing chamber 110 to which the wafer W is transferred, following processing of another wafer W, the support plate 41 of the lifting mechanism 4 is lowered, and the other wafer transfer module 20 that has been used to process the preceding wafer W is removed from the wafer processing chamber 110. The other wafer transfer module 20 transfers the wafer W for which processing has been completed to a transfer position with the load lock chamber 130.

[0044] When the wafer W is in a standby state in the wafer processing chamber 110 to which the wafer W is to be transferred and the preceding wafer W is not being processed, the support plate 41 is lowered and the closing module 50 is removed from the wafer processing chamber 110. The closing module 50 moves to the evacuation chamber 121. By these operations, the wafer transfer module 20 and the closing module 50 that have been blocking the opening 111 are removed, and the wafer processing chamber 110 is now in a state in which a new wafer W can be loaded therein.

[0045] Meanwhile, the wafer transfer module 20 that has received a new wafer W moves from the position where it received the wafer W from the load lock chamber 130 to the lower side of the wafer processing chamber 110 where the processing of that wafer W is performed. Thereafter, it stops at a predetermined position on the support plate 41, adjusts its orientation, and then turns off the module side coil 35. As a result, the magnetic levitation state is released, and the wafer transfer module 20 is placed on the support plate 41.

[0046] 6, the support plate 41 is raised and the stage 21 is inserted into the wafer processing chamber 110, thereby carrying the wafer W into the wafer processing chamber 110. With this operation, the opening 111 of the wafer processing chamber 110 is closed by the traveling plate 22, and an airtight processing space is formed in the wafer processing chamber 110 (FIG. 7).

[0047] After the wafer W has been loaded, the wafer W is heated by the stage 21 to a preset temperature, and a processing gas is supplied from the processing gas supply unit 112 into the wafer processing chamber 110. In this manner, a desired processing is performed on the wafer W.

[0048] After the processing of the wafer W is performed for a preset period, the heating of the wafer W is stopped and the supply of the processing gas is stopped. If necessary, a cooling gas may be supplied into the wafer processing chamber 110 to cool the wafer W. Thereafter, the support plate 41 is lowered and the wafer W is unloaded from the wafer processing chamber 110.

[0049] After the wafer W is unloaded, the next wafer W may be loaded into the wafer processing chamber 110 using another wafer transfer module 20 and processed therein. Alternatively, the opening 111 may be closed using the closing module 50 and the chamber may enter a standby state. During the standby state, the inside of the wafer processing chamber 110 may be cleaned.

[0050] On the other hand, when the support plate 41 of the wafer transfer module 20 descends to the floor surface portion 10 side, the module side coil 35 is turned on, and the wafer transfer module 20 moves by magnetic levitation to a position for transferring the wafer W to the load lock chamber 130. Thereafter, the processed wafer W is transferred to the load lock chamber 130 and the atmospheric transfer chamber 140 in the reverse order of the transfer-in, and is transferred into a carrier C for accommodating the processed wafer W.

[0051] After transferring the processed wafer W to the load lock chamber 130, the wafer transfer module 20 moves to the cleaning chamber 123 after each processing of the wafer W, or after a predetermined number of processings of the wafer W have been performed. In the cleaning chamber 123, cleaning is performed to remove reaction products and the like, and the stage 21 becomes clean. The wafer transfer module 20 moves to the vacuum transfer chamber 120 and transfers the wafer W again.

[0052] According to the wafer processing apparatus 100 of this embodiment, the wafer processing chamber 110 is provided on the upper surface side of the vacuum transfer chamber 120. Therefore, compared to the case where the wafer processing chamber 110 is connected to the side surface of the vacuum transfer chamber 120, for example, an increase in the footprint of the wafer processing apparatus 100 can be suppressed. In addition, magnetic levitation is used to transport the wafer W. Therefore, compared to a case where an extendable arm type wafer transport mechanism is provided in the vacuum transport chamber 120 to load and unload the wafer W, it is possible to suppress an increase in the footprint and height of the vacuum transport chamber 120 itself.

[0053] Furthermore, the stage 21 in this embodiment is mounted on the wafer transfer module 20, which is movable by magnetic levitation. Therefore, compared to a case in which the stage 21 is fixedly mounted inside the wafer processing chamber 110, the stage 21 can be cleaned independently using the cleaning chamber 123. As a result, the stage 21, which comes into direct contact with the wafer W, can be kept clean at all times, and contamination of the wafer W due to generation of particles or the like can be suppressed.

[0054] Here, the upward movement of the wafer transfer module 20 when inserting the stage 21 into the wafer processing chamber 110 is not limited to the above-mentioned example using the lifting mechanism 4. For example, as shown in Fig. 8, the wafer transfer module 20 may be moved upward by increasing the levitation amount of magnetic levitation.

[0055] At this time, as described above, after the stage 21 is inserted into the wafer processing chamber 110, the module side coil 35 of the wafer transfer module 20 is turned off to avoid the influence of the magnetic field of the floor side coil 15. On the other hand, if the module side coil 35 is turned off while the wafer transfer module 20 is being moved upward by magnetic levitation, the wafer transfer module 20 will fall. Therefore, as shown in Figures 8 and 9, a support mechanism 36 may be provided on the ceiling surface of the vacuum transfer chamber 120 to support the wafer transfer module 20.

[0056] The support mechanism 36 is provided with a support member 361 that is movable between a support position (position shown in FIG. 9) where the running plate 22 is supported from the lower surface side with the stage 21 inserted into the wafer processing chamber 110, and a retreated position (position shown in FIG. 8) retreated from the support position. In the example shown in FIG. 9, the support member 361 enters a notch 362 formed in the lower surface of the running plate 22 to support the running plate 22 from the lower surface side. Note that the function of the support mechanism 36 may be provided on the wafer transfer module 20 side.

[0057] In addition, in the above-described embodiment shown in Figures 2, 3, etc., the wafer transport module 20 is configured such that a disk-shaped running plate 22 having a larger diameter than the stage 21 is arranged on the lower side of the disk-shaped stage 21. In contrast to this, the wafer transfer module 20a may be configured, for example, by forming the stage 21 and the running plate 22 as a single unit. In this case, "forming as a single unit" refers to the case where the stage 21 and the running plate 22 are not distinguished from each other and the whole wafer transfer module 20a is configured.

[0058] 10, an O-ring 23 may be provided on the upper surface of the wafer transfer module 20a, while a recess into which the upper side of the wafer transfer module 20a can be inserted may be provided on the underside of the opening 111 on the wafer processing chamber 110 side. By inserting the upper side of the wafer transfer module 20a into the recess that constitutes part of the wafer processing chamber 110 and abutting the O-ring 23 provided on the upper surface of the wafer transfer module 20a against the upper surface of the recess, the inside of the wafer processing chamber 110 can be kept airtight.

[0059] In addition, the number and layout of the wafer processing chambers 110 arranged on the upper surface side of the vacuum transfer chamber 120 are not limited to the examples shown in Figures 1 to 3. The number of wafer processing chambers 110 arranged may be increased or decreased as necessary. For example, the technology of the present disclosure also includes the case where only one wafer processing chamber 110 is provided on the upper surface of the vacuum transfer chamber 120.

[0060] The arrangement of the vacuum transfer chamber 120 is not limited to the arrangement in which the long side of the rectangular vacuum transfer chamber 120 in plan view faces the front-rear direction as shown in Fig. 1. For example, the vacuum transfer chamber 120 may be arranged so that the long side faces the left-right direction when viewed from the load port 141 side. Furthermore, the planar shape of the vacuum transfer chamber 120 may be of various shapes depending on the shape of the area in which the wafer processing apparatus 100 is disposed. For example, it may be a square, a polygon having pentagons or more sides, a circle, or an ellipse.

[0061] In addition, the substrate transfer chamber in which the wafer W is transferred to the wafer processing chamber 110 using the wafer transfer module 20 is not limited to being configured as the vacuum transfer chamber 120 with a vacuum atmosphere inside. The wafer transfer module 20 of the present disclosure can also be applied to a wafer processing apparatus configured such that the wafer processing chamber 110 is provided on the upper side of a substrate transfer chamber with an atmospheric atmosphere inside. In this case, it is not essential to provide the load lock chamber 130 in the wafer processing apparatus, and the wafer W removed from the carrier C to the atmospheric transfer chamber 140 may be directly loaded into the substrate transfer chamber.

[0062] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0063] C Career W wafer 10 Floor section 15 Floor side coil 100 Wafer processing device 110 Wafer processing chamber 111 Opening 120 Vacuum Transfer Chamber 20 Wafer Transfer Module 21 Stage 22 Running board

Claims

1. An apparatus for processing a substrate, comprising: a substrate transfer chamber having a floor portion on which a first magnet is provided; a substrate transfer module including a stage on which the substrate is placed, a traveling plate disposed on a lower side of the stage, and a second magnet that generates a repulsive force between the second magnet and the first magnet, the substrate transfer module being movable within the substrate transfer chamber by magnetic levitation using the repulsive force; a plurality of substrate processing chambers provided on an upper surface side of the substrate transfer chamber for processing the substrate, the openings being large enough to allow at least a part of the stage on which the substrate is placed to pass, the openings opening into the substrate transfer chamber; the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening by moving the substrate transfer module upward, and the substrate is processed in a state in which the opening is closed by the traveling plate; The apparatus, wherein the interior of the substrate transfer chamber is configured at a height that allows another substrate transfer module to move below the substrate transfer module in a state in which the stage is inserted into the substrate processing chamber.

2. The apparatus described in claim 1, wherein the substrate transport chamber is provided with a plurality of substrate transport modules used for processing the substrates in a plurality of the substrate processing chambers.

3. An apparatus for processing a substrate, comprising: a substrate transfer chamber having a floor portion on which a first magnet is provided; a substrate transfer module including a stage on which the substrate is placed, a traveling plate disposed on a lower side of the stage, and a second magnet that generates a repulsive force between the second magnet and the first magnet, the substrate transfer module being movable within the substrate transfer chamber by magnetic levitation using the repulsive force; a substrate processing chamber that is provided on an upper surface side of the substrate transfer chamber for processing the substrate, the opening being large enough to allow at least a part of the stage on which the substrate is placed to pass and opening into the substrate transfer chamber; the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening by moving the substrate transfer module upward, and the substrate is processed in a state in which the opening is closed by the traveling plate; The substrate transport module comprises: a heating unit provided on the stage for heating the substrate; and a heating power supply unit for supplying power for heating to the heating unit.

4. An apparatus for processing a substrate, comprising: a substrate transfer chamber having a floor portion on which a first magnet is provided; a substrate transfer module including a stage on which the substrate is placed, a traveling plate disposed on a lower side of the stage, and a second magnet that generates a repulsive force between the second magnet and the first magnet, the substrate transfer module being movable within the substrate transfer chamber by magnetic levitation using the repulsive force; a substrate processing chamber that is provided on an upper surface side of the substrate transfer chamber for processing the substrate, the opening being large enough to allow at least a part of the stage on which the substrate is placed to pass and opening into the substrate transfer chamber; the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening by moving the substrate transfer module upward, and the substrate is processed in a state in which the opening is closed by the traveling plate; The substrate transport module is an apparatus having a plurality of lift pins that are configured to be freely protruding and retracting from the substrate loading surface on the stage, in order to transfer the substrate between the substrate transport module and an external substrate transport mechanism that loads and unloads the substrate into and from the substrate transport chamber.

5. The device described in Claim 4, wherein the lifting pin is provided with a third magnet that exerts a repulsive force between it and the first magnet, and is configured to be freely raised and lowered by magnetic levitation using the repulsive force.

6. An apparatus described in any one of claims 1 to 5, wherein the upward movement of the substrate conveying module is performed using a lifting mechanism that supports the running plate from the underside and has a support plate configured to be freely raised and lowered.

7. An apparatus as described in any one of claims 1 to 5, wherein the upward movement of the substrate transport module is performed by magnetic levitation.

8. 5. The apparatus according to claim 3, wherein a plurality of the substrate processing chambers are provided on an upper surface side of the substrate transfer chamber, and a plurality of the substrate transfer modules used for processing the substrates in the plurality of the substrate processing chambers are provided inside the substrate transfer chamber.

9. The apparatus according to claim 2 or 8, further comprising a closing module disposed within the substrate transport chamber, the closing module being configured to include the running plate and the second magnet and to be movable within the substrate transport chamber, but not including the stage, for closing the opening with the running plate during periods when the substrate is not being processed.

10. The apparatus according to claim 9 , wherein the substrate transfer chamber is connected to an evacuation chamber for evacuating the closing module during a period when the closing module is not in use.

11. 11. The apparatus according to claim 1, wherein the second magnet is an electromagnet, and the substrate transport module comprises: a magnet power supply unit for supplying power to the second magnet; and a power supply control unit for stopping the supply of power to the second magnet during a period in which the stage is inserted into the substrate processing chamber to avoid the influence of the first magnet.

12. 12. The apparatus according to claim 1, wherein a cleaning chamber for cleaning the stage of the substrate transfer module is connected to the substrate transfer chamber.

13. 12. The apparatus according to claim 1, wherein an exchange chamber for exchanging the substrate transfer module and / or the stage is connected to the substrate transfer chamber.

14. In the substrate transfer chamber, the substrate is transferred under a vacuum atmosphere, and in the substrate processing chamber, the substrate is processed under a vacuum atmosphere; 14. The apparatus according to claim 1, wherein a load lock chamber capable of switching between a normal pressure atmosphere and a vacuum atmosphere is connected to the substrate transfer chamber, and the substrate is loaded and unloaded via the load lock chamber.

15. An apparatus for processing a substrate, comprising: a substrate transfer chamber having a floor portion on which a first magnet is provided; a substrate transfer module including a mounting surface on which the substrate is placed and a second magnet on which a repulsive force acts between the first magnet and the second magnet, the substrate transfer module being movable within the substrate transfer chamber by magnetic levitation using the repulsive force; a plurality of substrate processing chambers provided on an upper surface of the substrate transfer chamber for processing the substrate, the openings being large enough to allow at least a part of the substrate transfer module with the substrate placed thereon to pass through, the openings opening into the substrate transfer chamber; the substrate transfer module is moved upward, the substrate transfer module on which the substrate is placed is inserted into the substrate processing chamber through the opening, and the substrate is processed in a state in which the opening is closed; The apparatus, wherein the interior of the substrate transfer chamber is configured at a height that allows other substrate transfer modules to move below the substrate transfer module when the substrate transfer module is inserted into the substrate processing chamber.

16. The apparatus described in claim 15, wherein the substrate transport chamber is provided with a plurality of substrate transport modules used for processing the substrates in a plurality of the substrate processing chambers.

17. An apparatus for processing a substrate, comprising: a substrate transfer chamber having a floor portion on which a first magnet is provided; a substrate transfer module including a mounting surface on which the substrate is placed and a second magnet on which a repulsive force acts between the first magnet and the second magnet, the substrate transfer module being movable within the substrate transfer chamber by magnetic levitation using the repulsive force; a substrate processing chamber that is provided on an upper surface side of the substrate transfer chamber for processing the substrate, the opening being large enough to allow at least a part of the substrate transfer module with the substrate placed thereon to pass through, the opening opening into the substrate transfer chamber; the substrate transfer module is moved upward, the substrate transfer module on which the substrate is placed is inserted into the substrate processing chamber through the opening, and the substrate is processed in a state in which the opening is closed; The substrate transport module includes a heating section for heating the substrate, and a heating power supply section for supplying power for heating to the heating section.

18. An apparatus for processing a substrate, comprising: a substrate transfer chamber having a floor portion on which a first magnet is provided; a substrate transfer module including a mounting surface on which the substrate is placed and a second magnet on which a repulsive force acts between the first magnet and the second magnet, the substrate transfer module being movable within the substrate transfer chamber by magnetic levitation using the repulsive force; a substrate processing chamber that is provided on an upper surface side of the substrate transfer chamber for processing the substrate, the opening being large enough to allow at least a part of the substrate transfer module with the substrate placed thereon to pass through, the opening opening into the substrate transfer chamber; the substrate transfer module is moved upward, the substrate transfer module on which the substrate is placed is inserted into the substrate processing chamber through the opening, and the substrate is processed in a state in which the opening is closed; The substrate transport module is an apparatus having a plurality of lift pins that are configured to be freely protruding and retracting from the substrate loading surface in order to transfer the substrate between the substrate transport module and an external substrate transport mechanism that loads and unloads the substrate into and from the substrate transport chamber.

19. The device described in Claim 18, wherein the lifting pin is provided with a third magnet that exerts a repulsive force between itself and the first magnet, and is configured to be freely raised and lowered by magnetic levitation using the repulsive force.

20. 1. A method for processing a substrate, comprising: a step of transporting the substrate placed on the stage by a substrate transport module that is accommodated in a substrate transport chamber having a floor portion on which a first magnet is provided and that includes a stage on which the substrate is placed, a running plate disposed on a lower side of the stage, and a second magnet that generates a repulsive force between the stage and the first magnet, the substrate transport module being movable within the substrate transport chamber by magnetic levitation using the repulsive force; Next, the substrate transfer module is moved upward toward a plurality of substrate processing chambers, the plurality of substrate processing chambers being provided on the upper surface side of the substrate transfer chamber for processing the substrate, and each of the substrate processing chambers has an opening that opens into the substrate transfer chamber, and the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening, and the opening is closed by the traveling plate. thereafter, processing the substrate in the substrate processing chamber; The method, wherein the interior of the substrate transfer chamber is configured at a height that allows another substrate transfer module to move below the substrate transfer module when the stage is inserted into the substrate processing chamber.

21. The method described in claim 20, wherein the substrate transport chamber is provided with a plurality of substrate transport modules used for processing the substrate in a plurality of the substrate processing chambers.

22. A method for processing a substrate, comprising: a step of transporting the substrate placed on the stage by a substrate transport module that is accommodated in a substrate transport chamber having a floor portion on which a first magnet is provided and that includes a stage on which the substrate is placed, a running plate disposed on a lower side of the stage, and a second magnet that generates a repulsive force between the stage and the first magnet, the substrate transport module being movable within the substrate transport chamber by magnetic levitation using the repulsive force; Next, the substrate transfer module is moved upward toward a substrate processing chamber provided on an upper surface side of the substrate transfer chamber for processing the substrate, the substrate processing chamber having an opening that opens into the substrate transfer chamber, the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening, and the opening is closed by the traveling plate. thereafter, heating the substrate by a heating unit provided on the stage of the substrate transfer module, and processing the substrate in the substrate processing chamber; and supplying power for heating to the heating section by a heating power supply section provided in the substrate transport module.

23. A method for processing a substrate, comprising: a step of transporting the substrate placed on the stage by a substrate transport module that is accommodated in a substrate transport chamber having a floor portion on which a first magnet is provided and that includes a stage on which the substrate is placed, a running plate disposed on a lower side of the stage, and a second magnet that generates a repulsive force between the stage and the first magnet, the substrate transport module being movable within the substrate transport chamber by magnetic levitation using the repulsive force; Next, the substrate transfer module is moved upward toward a substrate processing chamber provided on an upper surface side of the substrate transfer chamber for processing the substrate, the substrate processing chamber having an opening that opens into the substrate transfer chamber, the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening, and the opening is closed by the traveling plate. thereafter, processing the substrate in the substrate processing chamber; The method further includes a step in which the substrate transport module transfers the substrate between an external substrate transport mechanism that loads and unloads the substrate into and from the substrate transport chamber, using a plurality of lift pins that are configured to be freely protruded and retracted from the substrate loading surface of the stage.

24. The method described in claim 23, wherein the lifting pin is provided with a third magnet that exerts a repulsive force between it and the first magnet, and during the process of transferring the substrate, the lifting pin is raised and lowered by magnetic levitation using the repulsive force.

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