Surface light emitting element

Abstract

To provide a surface light emitting element capable of suppressing a decrease in productivity and a decrease in reliability.SOLUTION: A surface light emitting element 10 includes a light emitting element part LE that includes: a first structure ST1 including a first semiconductor structure; a second structure ST2 laminated with the first structure and including a second semiconductor structure; a light emitting layer 105 disposed between the first and second structures; and a laminated structure 107 provided between a surface of the first structure on an opposite side from a light emitting layer side and a surface of the second structure on an opposite side from a light emitting layer side. The laminated structure includes an oxidized constriction layer 107a, a first stress relaxation layer 107b disposed on a light emitting layer side of the oxidized constriction layer, and a second stress relaxation layer 107c disposed on an opposite side from the light emitting layer side of the oxidized constriction layer. The first stress relaxation layer includes a first semiconductor region having a first Al composition, and the second stress relaxation layer includes a second semiconductor region having a second Al composition, the second Al composition being higher than the first Al composition.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a surface light emitting device. [Background technology]

[0002] 2. Description of the Related Art Conventionally, surface-emitting devices capable of obtaining surface-emitting output, such as surface-emitting lasers and light-emitting diodes, have been known.

[0003] Among conventional surface light emitting devices, there are some that have an oxide constriction layer in the light emitting device portion (see, for example, Patent Document 1).

[0004] For example, in Patent Document 1, an oxidation constriction layer is separated into a plurality of sublayers having different thicknesses by at least one oxidation control layer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2018-517301 Summary of the Invention [Problem to be solved by the invention]

[0006] However, conventional surface light emitting devices have room for improvement in terms of suppressing decreases in productivity and reliability.

[0007] Therefore, a main object of the present technology is to provide a surface light emitting device capable of suppressing a decrease in productivity and a decrease in reliability. [Means for solving the problem]

[0008] The present technology includes a first structure including a first semiconductor structure; a second structure including a second semiconductor structure stacked with the first structure; a light-emitting layer disposed between the first and second structures; a laminated structure provided between a surface of the first structure opposite to the light-emitting layer side and a surface of the second structure opposite to the light-emitting layer side; A light-emitting element portion including: The laminate structure is An oxide constriction layer; a first stress relaxation layer disposed on the light emitting layer side of the oxide constriction layer; a second stress relaxation layer disposed on the opposite side of the oxidized constriction layer from the light emitting layer; Including, the first stress relief layer includes a first semiconductor region having a first Al composition; the second stress relief layer includes a second semiconductor region having a second Al composition; The second Al composition is higher than the first Al composition. The oxidized constriction layer may have a non-oxidized portion and an oxidized portion surrounding the non-oxidized portion, the non-oxidized portion having a third Al composition, and the third Al composition may be higher than the second Al composition. The second stress relief layer may include an oxidized region surrounding the second semiconductor region. The oxidized region may have a tapered shape that becomes thinner toward the inner circumferential end. The difference between the second Al composition and the first Al composition may be 0.1 or more. The second Al composition may be not less than 0.4 and not more than 0.95. The first Al composition may be not less than 0.3 and not more than 0.8. The second stress relief layer may have a thickness greater than a thickness of the first stress relief layer. The laminated structure may include a plurality of the first stress relief layers laminated on one another. The first semiconductor regions of the plurality of first stress relieving layers may include at least two of the first semiconductor regions having different first Al compositions. The plurality of first stress relief layers may include at least two of the first stress relief layers having different thicknesses. The laminated structure may include a plurality of the second stress relief layers laminated on one another. The second semiconductor regions of the plurality of second stress relieving layers may include at least two second semiconductor regions having different second Al compositions. The at least two second semiconductor regions may have a higher second Al composition in a region closer to the oxidized constriction layer. The plurality of second stress relief layers may include at least two second stress relief layers having different thicknesses. A plurality of the light emitting layers may be laminated between the first and second structures. The laminated structure may be formed by laminating a plurality of layers. The light emitting layer may be laminated in plurality. A tunnel junction layer may be disposed between the first and second structures. A cutout portion surrounding the laminated structure may be provided on a surface of the light emitting element component facing the second structure. [Brief description of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view of a surface light emitting device according to Example 1 of an embodiment of the present technology. [Diagram 2] 1 is a plan view of a surface light emitting device according to Example 1 of an embodiment of the present technology. [Diagram 3] 1 is a flowchart for explaining an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. [Figure 4] 4A and 4B are cross-sectional views of each step of an example of a manufacturing method for a surface light emitting device according to Example 1 of an embodiment of the present technology. [Diagram 5] 5A and 5B are cross-sectional views of each step of an example of a manufacturing method for a surface light emitting device according to Example 1 of an embodiment of the present technology. [Figure 6] 6A and 6B are cross-sectional views of each step of an example of a method for manufacturing a surface light emitting device according to Example 1 of an embodiment of the present technology. [Figure 7] 7A and 7B are cross-sectional views of each step of an example of a method for manufacturing a surface light emitting device according to Example 1 of an embodiment of the present technology. [Figure 8]8A and 8B are cross-sectional views of each step of an example of a method for manufacturing a surface light emitting device according to Example 1 of an embodiment of the present technology. [Figure 9] 11 is a cross-sectional view of a surface light emitting device according to Example 2 of an embodiment of the present technology. [Figure 10] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 3 of an embodiment of the present technology. [Figure 11] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 4 of an embodiment of the present technology. [Figure 12] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 5 of an embodiment of the present technology. [Figure 13] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 6 of an embodiment of the present technology. [Figure 14] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 7 of an embodiment of the present technology. [Figure 15] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 8 of an embodiment of the present technology. [Figure 16] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 9 of an embodiment of the present technology. [Figure 17] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 10 of an embodiment of the present technology. [Figure 18] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 11 of an embodiment of the present technology. [Figure 19] FIG. 15 is a cross-sectional view of a surface light emitting device according to Example 12 of an embodiment of the present technology. [Figure 20] FIG. 21 is a cross-sectional view of a surface light emitting device according to Example 13 of an embodiment of the present technology. [Figure 21] FIG. 21 is a cross-sectional view of a surface light emitting device according to Example 14 of an embodiment of the present technology. [Figure 22] FIG. 21 is a cross-sectional view of a surface light emitting device according to Example 15 of an embodiment of the present technology. [Figure 23] 13 is a cross-sectional view (part 1) of a surface light emitting device according to Example 16 of an embodiment of the present technology. [Figure 24] 13 is a cross-sectional view (part 2) of a surface light emitting device according to Example 16 of an embodiment of the present technology. [Diagram 25]FIG. 21 is a plan view of a surface light emitting device according to Example 16 of an embodiment of the present technology. [Figure 26] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 17 of an embodiment of the present technology. [Figure 27] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 18 of an embodiment of the present technology. [Figure 28] 1 is a cross-sectional view of a surface light emitting device according to Modification 1 of Example 1 of an embodiment of the present technology. [Figure 29] 1 is a cross-sectional view of a surface light emitting device according to Modification 2 of Example 1 of an embodiment of the present technology. [Diagram 30] 13 is a cross-sectional view of a surface light emitting device according to Modification 1 of Example 10 of an embodiment of the present technology. [Diagram 31] 13 is a cross-sectional view of a surface light emitting device according to Modification 2 of Example 10 of an embodiment of the present technology. [Diagram 32] 11 is a cross-sectional view of a surface light emitting device according to Modification 1 of Example 11 of an embodiment of the present technology. [Diagram 33] FIG. 13 is a cross-sectional view of a surface light emitting device according to Modification 2 of Example 11 of an embodiment of the present technology. [Diagram 34] 1 is a diagram showing an example of application of a surface light emitting device according to Example 1 of an embodiment of the present technology to a distance measuring device. [Diagram 35] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Diagram 36] FIG. 2 is an explanatory diagram showing an example of an installation position of a distance measuring device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] A preferred embodiment of the present technology will be described in detail below with reference to the accompanying drawings. In this specification and the drawings, components having substantially the same functional configuration are denoted by the same reference numerals to avoid repeated description. The embodiments described below are representative embodiments of the present technology, and the scope of the present technology is not narrowly interpreted by this. Even if it is described in this specification that the surface light emitting device according to the present technology has multiple effects, the surface light emitting device according to the present technology only needs to have at least one effect. The effects described in this specification are merely examples and are not limited, and other effects may also be present.

[0011] The explanation will be given in the following order: 0. Introduction 1. Surface light emitting device according to Example 1 of an embodiment of the present technology 2. Surface light emitting device according to Example 2 of an embodiment of the present technology 3. Surface light emitting device according to Example 3 of an embodiment of the present technology 4. Surface light emitting device according to Example 4 of an embodiment of the present technology 5. Surface light emitting device according to Example 5 of an embodiment of the present technology 6. Surface light emitting device according to Example 6 of an embodiment of the present technology 7. Surface light emitting device according to Example 7 of an embodiment of the present technology 8. Surface light emitting device according to Example 8 of an embodiment of the present technology 9. Surface light emitting device according to Example 9 of an embodiment of the present technology 10. Surface light emitting device according to Example 10 of an embodiment of the present technology 11. Surface light emitting device according to Example 11 of an embodiment of the present technology 12. Surface light emitting device according to Example 12 of an embodiment of the present technology 13. Surface light emitting device according to Example 13 of an embodiment of the present technology 14. Surface light emitting device according to Example 14 of an embodiment of the present technology 15. Surface light emitting device according to Example 15 of an embodiment of the present technology 16. Surface light emitting device according to Example 16 of an embodiment of the present technology 17. Surface light emitting device according to Example 17 of an embodiment of the present technology 18. Surface light emitting device according to Example 18 of an embodiment of the present technology 19. Modifications of this technology 20. Application examples to electronic devices 21. Example of application of surface-emitting element to distance measuring device 22. Example of distance measuring device mounted on a moving object

[0012] <0. Introduction>

[0013] Conventionally, in many surface-emitting devices (surface-emitting lasers, light-emitting diodes, etc.), an oxidation process has been introduced in which a high Al content layer (e.g., an AlAs layer) serving as an oxidized layer is selectively oxidized to generate an oxidized constriction layer in order to form a confinement structure for confining carriers and photons. A side effect of the oxidation process is that other layers, such as a DBR (Distributed Bragg Reflector) layer, may also be oxidized. This may result in the risk of defects such as cracks caused by stress in the element (especially on the light-emitting layer side). To avoid this, a stress relaxation layer (e.g., an AlAs layer) may be formed around the oxidized layer. 0.9 Measures to alleviate stress have been taken, such as providing layers such as GaAs, strain relief layers, and low Al content layers.

[0014] However, in conventional surface-emitting devices, even if such stress relaxation measures are taken, it is difficult to suppress the decrease in the oxidation rate of the oxidized layer and to suppress the occurrence of defects on the light-emitting layer side. The decrease in the oxidation rate leads to a decrease in productivity, and the occurrence of defects on the light-emitting layer side leads to a decrease in reliability.

[0015] Therefore, after extensive research, the inventors have succeeded in suppressing the decrease in the oxidation rate of the oxidized layer and suppressing the occurrence of defects on the light-emitting layer side by providing different profiles to the stress relaxation layers provided on both sides of the oxidized constriction layer in the stacking direction in a surface-emitting device. This is a new discovery by the inventors.

[0016] The inventors have developed a surface light emitting device according to the present technology as a surface light emitting device that embodies this new finding. The surface light emitting device according to the present technology can provide a surface light emitting device that can suppress a decrease in productivity and a decrease in reliability.

[0017] Hereinafter, some examples of an embodiment of a surface light emitting device according to the present technology will be described in detail with reference to the drawings. In the following, in the cross-sectional views of FIG. 1 and the like, the upper side will be referred to as "upper" and the lower side as "lower" as appropriate.

[0018] <1. Surface light emitting device according to Example 1 of one embodiment of the present technology> Fig. 1 is a cross-sectional view of a surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 2 is a plan view (top view) of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 1 is a cross-sectional view taken along line 1-1 in Fig. 2.

[0019] <Configuration of surface-emitting element> (Overall composition) A surface light emitting device 10 according to Example 1 of an embodiment of the present technology is, for example, a vertical cavity surface emitting laser (VCSEL) as shown in Fig. 1 and Fig. 2. The surface light emitting device 10 is, for example, a surface emission type VCSEL.

[0020] The surface light emitting element 10 is driven by, for example, a driver (drive circuit). The driver includes, for example, a power source and a transistor that controls the on / off of the power supply to the surface light emitting element 10 from the power source.

[0021] The surface light emitting element 10 has, as an example, a light emitting element portion LE.

[0022] The light-emitting element unit LE includes, for example, a first structure ST1 including a first semiconductor structure SS1, a second structure ST2 including a second semiconductor structure SS2 stacked on the first structure ST1, a light-emitting layer 105 disposed between the first and second structures ST1, ST2, and a stacked structure 107 provided between a surface (lower surface) of the first structure ST1 opposite to the light-emitting layer 105 side and a surface (upper surface) of the second structure ST2 opposite to the light-emitting layer 105 side. Hereinafter, the direction in which the first and second structures ST1, ST2 are stacked (vertical direction) will also be referred to as the "stacking direction".

[0023] As an example, the first structure ST1 further includes a buffer layer 102 arranged on the opposite side (lower side) of the first semiconductor structure SS1 to the light emitting layer 105 side, and a substrate 101 arranged on the opposite side of the buffer layer 102 to the light emitting layer 105 side.

[0024] The first semiconductor structure SS1 includes, for example, a first semiconductor multilayer reflector 103 and a first cladding layer 104 that are stacked on each other. The first cladding layer 104 is disposed between the first semiconductor multilayer reflector 103 and the light emitting layer 105.

[0025] The second semiconductor structure SS2 has a different conductivity type from the first semiconductor structure SS1, for example. The second semiconductor structure SS2 includes, for example, a second cladding layer 106, a second semiconductor multilayer film reflector 108, and a contact layer 109, which are stacked on top of each other. The second cladding layer 106 is disposed on the opposite side (upper side) of the light emitting layer 105 to the first cladding layer 104 side. The second semiconductor multilayer film reflector 108 is disposed on the opposite side (upper side) of the light emitting layer 105 side of the second cladding layer 106. The contact layer 109 is disposed on the opposite side (upper side) of the second semiconductor multilayer film reflector 108 to the second cladding layer 106 side.

[0026] The laminated structure 107 is disposed, for example, in the second structure ST2, specifically in the second semiconductor structure SS2, more specifically between the second semiconductor multilayer film reflector 108 and the second cladding layer 106. The laminated structure 107 is configured to include, for example, an oxide constriction layer 107a. The oxide constriction layer 107a defines a light emitting region LA of the light emitting layer 105. The light emitting region LA is a region in the light emitting layer 105 into which a current is injected (current injection region) and which emits light.

[0027] As described above, in the surface-emitting element 10, as an example, a buffer layer 102, a first semiconductor multilayer reflector 103, a first cladding layer 104, an emission layer 105, a second cladding layer 106, a layered structure 107 including an oxide constriction layer 107a, a second semiconductor multilayer reflector 108, and a contact layer 109 are layered in this order on a substrate 101.

[0028] In the surface-emitting device 10, the light-emitting layer 105 has a double heterostructure sandwiched in the stacking direction between first and second cladding layers 104, 106 of different conductivity types, and holes and electrons can be radiatively recombined (radiatively recombined) in the light-emitting layer 105.

[0029] In the surface-emitting device 10, a resonator is configured including a light-emitting layer 105 and first and second semiconductor multilayer film reflectors 103, 108 sandwiching the light-emitting layer 105 in the stacking direction. The surface-emitting device 10 emits laser light to the side opposite to the light-emitting layer 105 side of the second structure ST2 (the front surface side (upper surface side) of the substrate 101).

[0030] As an example, a cutout portion surrounding the laminated structure 107 is provided on the surface of the light-emitting element portion LE on the second structure ST2 side. Here, the cutout portion is a notch or a groove that defines a mesa structure MS. The mesa structure MS includes at least a part (e.g., an upper part) of the first semiconductor structure SS1, the first cladding layer 104, the light-emitting layer 105, the second cladding layer 106, the laminated structure 107, and the second semiconductor structure SS2. The mesa structure MS is also called a light-emitting mesa. Here, the shape of the light-emitting mesa in a plan view is circular (see FIG. 2), but is not limited thereto and may be other shapes such as an ellipse or a polygon. The diameter of the light-emitting mesa is, as an example, several tens of μm (e.g., 20 μm to 30 μm).

[0031] A circumferential (for example, ring-shaped) anode electrode 111 (p-side electrode) is provided on the mesa structure MS (specifically, on the contact layer 109) so as to surround, in plan view, the light emitting region LA of the light emitting layer 105. The inner diameter side of the anode electrode 111 serves as an emission aperture.

[0032] As an example, the mesa structure MS and a region of the first semiconductor structure SS1 surrounding the mesa structure MS are covered with an insulating film 110. The insulating film 110 exposes an anode electrode 111. An anode wiring 112 is provided on the insulating film 110 so as to be in contact with the anode electrode 111. The anode wiring 112 is not provided on the insulating film 110 on the inner diameter side of the anode electrode 111.

[0033] As an example, on the rear surface (lower surface) of the substrate 101, a solid cathode electrode 113 (n-side electrode) is provided.

[0034] As one example, the surface light emitting element 10 is mounted on a mounting board (eg, a drive board having a driver, a wiring board connected to the driver, etc.) with the junction up.

[0035] (substrate) The substrate 101 is, for example, a GaAs substrate (eg, an n-GaAs substrate).

[0036] (Buffer layer) The buffer layer 102 is made of, for example, a non-doped compound semiconductor (e.g., AlGaAs). Depending on the type of the substrate 101 and the vertical structure design, the buffer layer 102 may be made of a compound semiconductor doped with an n-type impurity (e.g., Si) (e.g., n-AlGaAs) or a compound semiconductor doped with a p-type impurity (e.g., C, Zn) (e.g., p-AlGaAs).

[0037] (First semiconductor multilayer mirror) The first semiconductor multilayer reflector 103 (semiconductor DBR) is, for example, a semiconductor multilayer reflector doped with n-type impurities, and has low light absorption, high reflectance, and electrical conductivity. The multilayer reflector is also called a distributed Bragg reflector (DBR). The first semiconductor multilayer reflector 103 has a structure in which high-refractive index layers and low-refractive index layers having different refractive indices are alternately stacked with an optical thickness of ¼ wavelength of the emission wavelength of the light-emitting layer 105. The low-refractive index layers are made of compound semiconductors containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layers are made of compound semiconductors (e.g., AlGaAs, GaAs, etc.). The low-refractive index layers are high-Al composition layers having a higher Al composition than the high-refractive index layers. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layers and the low-refractive index layers is as large as possible. This is because a high reflectance can be obtained with a small number of pairs. The Al composition of the low refractive index layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high refractive index layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of n-type impurities (n-type dopants) of the first semiconductor multilayer film reflector 103 include Si, Se, and Ge. The reflectance of the first semiconductor multilayer film reflector 103 is set slightly higher than that of the second semiconductor multilayer film reflector 108.

[0038] (First cladding layer) The first cladding layer 104 is made of n-AlGaAs, for example. The "cladding layer" is also called a "spacer layer."

[0039] (Light Emitting Layer) The light emitting layer 105 is made of, for example, a compound semiconductor having a smaller band gap energy than the first and second cladding layers 104 and 106. The light emitting layer 105 is made of, for example, a GaAs-based compound semiconductor (e.g., GaAs, AlGaAs, GaInAs, GaInAsN, etc.). The light emitting layer 105 may have any of a quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The emission wavelength of the light emitting layer 105 is set to, for example, about 600 to 1100 nm. The light emitting layer 105 is also called an "active layer." The light emitting layer 105 is preferably disposed at or near the antinode of a standing wave generated in the resonator.

[0040] (Second cladding layer) The second cladding layer 106 is made of p-AlGaAs, for example. The "cladding layer" is also called a "spacer layer."

[0041] (Second semiconductor multilayer mirror) The second semiconductor multilayer reflector 108 (semiconductor DBR) is, for example, a semiconductor multilayer reflector doped with p-type impurities, and has low light absorption, high reflectance, and electrical conductivity. The multilayer reflector is also called a distributed Bragg reflector (DBR). The second semiconductor multilayer reflector 108 has a structure in which high-refractive index layers and low-refractive index layers having different refractive indices are alternately stacked with an optical thickness of ¼ wavelength of the emission wavelength of the light emitting layer 105. The low-refractive index layers are made of compound semiconductors containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layers are made of compound semiconductors (e.g., AlGaAs, GaAs, etc.). The low-refractive index layers are high-Al composition layers having a higher Al composition than the high-refractive index layers. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layers and the low-refractive index layers is large. This is because a high reflectance can be obtained with a small number of pairs. The Al composition of the low refractive index layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high refractive index layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of p-type impurities (p-type dopants) in the second semiconductor multilayer film reflector 108 include Zn, Mg, Be, and C.

[0042] (contact layer) The contact layer 109 is, for example, a highly doped layer (e.g., a p-GaAs layer) that has high carrier conductivity and is doped with a high concentration of p-type impurities. Examples of the p-type impurities (p-type dopants) include Zn, Mg, Be, and C.

[0043] (insulating film) The insulating film 110 is made of a dielectric material such as SiN, SiO2, or SiON.

[0044] (anode electrode) The anode electrode 111 may have a single-layer structure or a multi-layer structure. The anode electrode 111 is made of at least one metal (including alloy) selected from the group consisting of Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the anode electrode 111 has a multi-layer structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, etc. The anode electrode 111 is electrically connected to the anode side of the driver.

[0045] (anode wiring) The anode wiring 112 is made of plating containing, for example, Au, Ag, Cu, or the like.

[0046] (cathode electrode) The cathode electrode 113 may have a single-layer structure or a laminated structure. The cathode electrode 113 is made of at least one metal (including alloy) selected from the group consisting of Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the cathode electrode 113 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, etc. The cathode electrode 113 is electrically connected to the cathode side of the driver.

[0047] (Laminated structure) The laminated structure 107 includes, for example, first and second stress relief layers 107b and 107c in addition to the oxidized constricting layer 107a. The first stress relief layer 107b is disposed on the light emitting layer 105 side (lower side) of the oxidized constricting layer 107a. The second stress relief layer 107c is disposed on the opposite side (upper side) of the oxidized constricting layer 107a from the light emitting layer 105 side.

[0048] The first stress relaxation layer 107b includes, for example, a first semiconductor region having a first Al composition. Here, the first stress relaxation layer 107b is substantially entirely the first semiconductor region. The first semiconductor region has a function of relaxing stress caused by oxide generation in an oxidation step for forming the oxidized constriction layer 107a, and also has a function of suppressing excess oxidation toward the light emitting layer 105 during the oxidation step. The first semiconductor region is made of, for example, AlGaAs. The first Al composition of the first semiconductor region is, for example, preferably 0.3 to 0.8.

[0049] The second stress relaxation layer 107c includes, for example, a second semiconductor region 107c1 having a second Al composition. The second semiconductor region 107c1 has a function of relaxing stress caused by oxide generation in an oxidation step for forming the oxidized constriction layer 107a, and also has a function of suppressing a decrease in the oxidation rate during the oxidation step. The second semiconductor region 107c1 is made of, for example, AlGaAs. For example, the second Al composition of the second semiconductor region 107c1 is preferably 0.4 or more and 0.95 or less. It is preferable that the second Al composition is higher than the first Al composition of the first semiconductor region. In this case, the difference between the second Al composition and the first Al composition is preferably 0.1 or more, more preferably 0.2 or more, and even more preferably 0.3 or more. Here, the thickness of the second stress relaxation layer 107c is set to be the same as the thickness of the first stress relaxation layer 107b.

[0050] The second stress relaxation layer 107c further includes an oxidized region 107c2 (insulating region) surrounding the second semiconductor region 107c1, for example. The oxidized region 107c2 is, for example, circular (for example, ring-shaped) in plan view, and has a tapered shape in which the thickness of the vertical cross section (cross section parallel to the stacking direction) decreases toward the inner circumferential end (end on the inner circumferential side). The oxidized region 107c2 has a tapered upper surface (an inclined plane or an inclined curved surface inclined with respect to the stacking direction) and a flat lower surface (a plane substantially perpendicular to the stacking direction). The oxidized region 107c2 forms an oxidized structure (oxidized constriction structure, the same applies below) together with an oxidized portion 107a2 of the oxidized constriction layer 107a, which will be described later, and contributes to making the thickness of the oxidized structure equal to or greater than a desired thickness over the entire radial area. This leads to stabilization of the transverse mode. The second stress relaxation layer 107c is preferably disposed at or near a node of a standing wave generated in the resonator.

[0051] The oxidized region 107c2 has the tapered shape, and thus functions as a current guide that guides the current flowing from the anode electrode 111 through the second semiconductor multilayer film reflector 108 to the non-oxidized portion 107a1 of the oxidized constriction layer 107a, which will be described later. The oxidized region 107c2 is, for example, an oxide containing Al (e.g., Al x O y etc.)

[0052] The oxidized constriction layer 107a, for example, has a non-oxidized portion 107a1 and an oxidized portion 107a2 (insulating region) surrounding the non-oxidized portion 107a1. The oxidized constriction layer 107a is preferably disposed at or near a node of a standing wave generated in the resonator. The thickness of the oxidized constriction layer 107a may be the same as or different from the thicknesses of the first and second stress relaxation layers 107b and 107c.

[0053] The non-oxidized portion 107a1 corresponds to the light emitting region LA and functions as a current / light passing portion. The non-oxidized portion 107a1 is located at a position corresponding to the center of each of the first semiconductor region of the first stress relaxation layer 107b and the second semiconductor region 107c1 of the second stress relaxation layer 107c. The non-oxidized portion 107a1 includes, for example, a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The non-oxidized portion 107a1 has a third Al composition. The third Al layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The third Al composition is preferably higher than the second Al composition of the second semiconductor region 107c1.

[0054] The oxidized portion 107a2 is, for example, a region that is circular (for example, ring-shaped) in plan view and surrounds the non-oxidized portion 107a1. The oxidized portion 107a2 is located at a position corresponding to the oxidized region 107c2 of the second stress relaxation layer 107c. The oxidized portion 107a2 is a region that has a higher resistance and a lower refractive index than the non-oxidized portion 107a1, and functions as a current / light confinement region. For example, the oxidized portion 107a2 is made of an oxide containing Al (for example, Al x O y The oxidized portion 107a2 and the oxidized region 107c2 are substantially integral and form a single oxidized structure.

[0055] <Operation of surface light emitting element> The operation of the surface light emitting device 10 will be described below. When a power supply voltage of the driver is applied between the anode electrode 111 and the cathode electrode 113, a current flows from the anode side of the driver to the light emitting element section LE via the anode electrode 111. The current flowing into the light emitting element section LE passes through the contact layer 109 and the second semiconductor multilayer film reflector 108 in this order, is guided by the second stress relaxation layer 107c, is constricted by the oxide constriction layer 107a, and is injected into the light emitting region LA of the light emitting layer 105 via the second cladding layer 106. At this time, the light emitting region LA emits light, and the light travels back and forth between the first and second semiconductor multilayer film reflectors 103 and 108 while being constricted by the oxide constriction layer 107a and amplified by the light emitting layer 105, and when the oscillation condition is satisfied, it is emitted as laser light from the surface (upper surface) of the light emitting element section LE. The current injected into the light emitting region LA flows through the first cladding layer 104, the first semiconductor multilayer film reflector 103, the buffer layer 102, the substrate 101, and the cathode electrode 113 in this order, and then flows out to the cathode side of the driver.

[0056] <Manufacturing method of surface light emitting device> An example of a method for manufacturing the surface light emitting device 10 will be described below with reference to the flow chart of Fig. 3. The overall flow is as follows: first, a semiconductor manufacturing method using a semiconductor manufacturing apparatus is used to simultaneously produce a plurality of surface light emitting devices 10 on a single wafer (hereinafter, for convenience, referred to as "substrate 101"), which is the base material of the substrate 101. Next, the series of the plurality of surface light emitting devices 10 are separated from each other by dicing (e.g., stealth dicing) to obtain chip-shaped surface light emitting devices 10.

[0057] In the first step S1, a laminate is produced (see FIG. 4A). Specifically, a laminate is produced by laminating a buffer layer 102, a first semiconductor multilayer reflector 103, a first cladding layer 104, a light emitting layer 105, a second cladding layer 106, a first semiconductor layer 107bS (e.g., an AlGaAs layer), an oxidized layer 107aS (e.g., AlGaAs, AlAs, etc.), a second semiconductor layer 107cS (e.g., an AlGaAs layer), a second semiconductor multilayer reflector 108, and a contact layer 109 in this order on a substrate 101 as a growth substrate by an epitaxial crystal growth method such as MOCVD (Metal Organic Chemical Vapor Deposition). The first semiconductor layer 107bS is a layer that is to be the material of the first stress relaxation layer 107b. The oxidized layer 107aS is a layer that is to be the material of the oxidized constriction layer 107a. The second semiconductor layer 107cS is a layer that is to become the material of the second stress relaxation layer 107c. When the laminate is produced, for example, methyl-based organometallic gases such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn) and arsine (AsH3) gas are used as raw materials for the compound semiconductor, for example, disilane (Si2H6) is used as raw materials for the donor impurities, and for example, carbon tetrabromide (CBr4) is used as raw materials for the acceptor impurities.

[0058] In the next step S2, the mesa M is formed. Specifically, first, a resist pattern RP for forming the mesa M on the laminate is formed by photolithography (see FIG. 4B). Next, the laminate is etched by, for example, dry etching using the resist pattern RP as a mask (see FIG. 5A). This etching is performed until at least the side surface of the oxidized layer 107aS is exposed (for example, until the etched bottom surface is located within the first semiconductor multilayer film reflector 103). As a result, the mesa M is formed. After that, the resist pattern RP is removed (see FIG. 5B).

[0059] In the next step S3, the oxidized constriction layer 107a is formed (see FIG. 6A). Specifically, the mesa M formed in the laminate is exposed to a high-temperature water vapor atmosphere to selectively oxidize the oxidized layer 107aS and the second semiconductor layer 107cS (see FIG. 5B) from the side. At this time, oxidation is performed under oxidation conditions and for an oxidation time such that the oxidized layer 107aS having the highest Al composition in the laminate structure 107 is oxidized by a predetermined distance and the first semiconductor layer 107bS having the lowest Al composition is hardly or not oxidized at all. This predetermined distance is a distance that allows the oxidized constriction layer 107a to obtain a desired oxidized constriction diameter (the inner diameter of the oxidized portion 107a2). The oxidized layer 107aS and the second semiconductor layer 107cS adjacent to each other are oxidized at an oxidation rate according to their respective Al compositions, but compared to the case of only the oxidized layer 107aS, the oxidation cross section is substantially larger and the decrease in the oxidation rate of the oxidized layer 107aS is suppressed. Finally, the oxidized layer 107aS with a relatively high Al composition is oxidized almost uniformly in the thickness direction from the oxidation start (outer peripheral end) to the oxidation end (inner peripheral end), and the oxidation of the second semiconductor layer 107cS with a relatively low Al composition tapers off in the thickness direction from the oxidation start (outer peripheral end) to the oxidation end (inner peripheral end). This is because the oxidation rate of the second semiconductor layer 107cS is substantially higher in the portion closer to the oxidized layer 107aS due to the effect of the high oxidation rate of the oxidized layer 107aS. The oxidation rate of the oxidized layer 107aS is also suppressed from decreasing due to the adjacent second semiconductor layer 107cS with a relatively high Al composition. As a result, an oxidized structure including the oxidized portion 107a2 and the oxidized region 107c2 shown in FIG. 6A is formed.

[0060] In the next step S4, the anode electrode 111 is formed (see FIG. 6B). Specifically, the anode electrode 111 is formed in a circumferential shape (for example, a ring shape) on the contact layer 109 of the light-emitting element unit LE so as to surround the light-emitting region in a planar view, for example, by a lift-off method. At this time, for example, deposition, sputtering, etc. are used to form a film of the electrode material.

[0061] In the next step S5, the insulating film 110 is formed. Specifically, first, the insulating film 110 is formed on the entire surface (see FIG. 7A). Next, the insulating film 110 on the anode electrode 111 is removed by photolithography and etching to expose the anode electrode 111 (see FIG. 7B).

[0062] In the next step S6, the anode wiring 112 is formed (see FIG. 8A). Specifically, the anode wiring 112 is formed by, for example, a plating method so as to be in contact with the anode electrode 111 and to expose the insulating film 110 on the inner diameter side of the anode electrode 111. Prior to carrying out the plating method, it is preferable to form a seed layer in advance at the location to be plated.

[0063] In the final step S7, the cathode electrode 113 is formed (see FIG. 8B). Specifically, the rear surface (lower surface) of the substrate 101 is polished to an overall thickness of about 100 μm, and then the cathode electrode 113 is formed in a solid manner on the rear surface (lower surface) of the substrate 101. At this time, for example, deposition, sputtering, etc. are used to form a film of the electrode material.

[0064] <Effects of surface light emitting device and method for manufacturing surface light emitting device> The effects of the surface light emitting device 10 will be described below.

[0065] The surface-emitting device 10 comprises a light-emitting element section LE including a first structure ST1 including a first semiconductor structure SS1, a second structure ST2 including a second semiconductor structure SS2 stacked with the first structure ST1, a light-emitting layer 105 arranged between the first and second structures ST1, ST2, and a laminated structure 107 provided between the surface of the first structure ST1 opposite the light-emitting layer 105 side and the surface of the second structure ST2 opposite the light-emitting layer 105 side. The laminated structure 107 includes an oxidized constriction layer 107a, a first stress relaxation layer 107b arranged on the light emitting layer 105 side of the oxidized constriction layer 107a, and a second stress relaxation layer 107c arranged on the opposite side of the oxidized constriction layer 107a to the light emitting layer 105 side, where the first stress relaxation layer 107b includes a first semiconductor region having a first Al composition, and the second stress relaxation layer 107c includes a second semiconductor region 107c1 having a second Al composition, and the second Al composition is higher than the first Al composition.

[0066] In the surface light emitting element 10, since the second Al composition is higher than the first Al composition, it is possible to suppress a decrease in the oxidation rate of the oxidized layer 107aS, which is the material of the oxidized constriction layer 107a, and also to suppress the progress of oxidation toward the light emitting layer 105. Suppressing the decrease in the oxidation rate leads to shortening the oxidation time and suppressing excess oxidation. Suppressing the progress of oxidation toward the light emitting layer 105 leads to suppressing the diffusion of oxidized impurities into the light emitting layer 105 and the occurrence of stress on the light emitting layer 105 side. The diffusion of oxidized impurities can also cause increased light absorption.

[0067] As a result, according to the surface light emitting device 10, it is possible to provide a surface light emitting device that can suppress decreases in productivity and reliability.

[0068] On the other hand, if the Al composition of the stress relaxation layers on both sides of the oxidized constriction layer 107a in the stacking direction is made equally high, the decrease in the oxidation rate of the oxidized layer 107aS can be suppressed, but the progress of oxidation toward the light-emitting layer 105 cannot be suppressed. Also, if the Al composition of the stress relaxation layers on both sides of the oxidized constriction layer 107a is made equally low, the progress of oxidation toward the light-emitting layer 105 can be suppressed, but the decrease in the oxidation rate of the oxidized layer 107aS cannot be suppressed.

[0069] In addition, for example, in Patent Document 1, the oxidation constriction layer is separated into multiple sublayers of different thicknesses by at least one oxidation control layer, but it is difficult to simultaneously suppress a decrease in the oxidation rate and suppress the progression of oxidation toward the light-emitting layer 105, and it is also difficult to suppress a decrease in productivity and a decrease in reliability.

[0070] The oxidized constriction layer 107a has a non-oxidized portion 107a1 and an oxidized portion 107a2 surrounding the non-oxidized portion 107a1, and the non-oxidized portion 107a1 has a third Al composition that is higher than the second Al composition, thereby making it possible to obtain a desired oxidized constriction diameter in the oxidized constriction layer 107a and to provide the second stress relaxation layer 107c with a stress relaxation function.

[0071] The second stress relieving layer 107c includes an oxidized region 107c2 surrounding the second semiconductor region 107c1. In this case, the oxidized region 107c2 functions as a current guide, so that a current can be efficiently passed to the non-oxidized portion 107a1.

[0072] The oxidized region 107c2 has a tapered shape in cross section, the thickness of which decreases toward the inner circumferential end, thereby providing the second stress relief layer 107c with a stress relief function, and substantially increasing the thickness of the oxidized portion of the oxidized constriction layer 107a, thereby stabilizing the transverse mode.

[0073] It is preferable that the difference between the second Al composition and the first Al composition is equal to or greater than 0.1, which can more reliably suppress the decrease in productivity and the decrease in reliability.

[0074] The second Al composition is equal to or greater than 0.4 and equal to or less than 0.95, which allows the second stress relaxation layer 107c to have at least to some extent both the stress relaxation function and the function of suppressing a decrease in the oxidation rate of the oxidized constriction layer 107a.

[0075] The first Al composition is 0.3 or more and 0.8 or less. This allows the first stress relaxation layer 107b to have the necessary stress relaxation function while having a function of suppressing the decrease in the oxidation rate of the oxidized constriction layer 107a to a certain extent. If the first Al composition is less than 0.3, the decrease in the oxidation rate of the oxidized constriction layer 107a cannot be suppressed and the oxidation time becomes longer. As a result, the amount of oxidation on the DBR side of the light emitting mesa increases, increasing the mesa stress, and there is a concern that mesa cracks will occur or reliability will decrease.

[0076] <2. Surface light emitting device according to Example 2 of one embodiment of the present technology> FIG. 9 is a cross-sectional view of a surface light emitting device 20 according to Example 2 of an embodiment of the present technology.

[0077] As shown in FIG. 9, the surface light emitting device 20 has the same configuration as the surface light emitting device 10 of Example 1, except that the second stress relief layer 107c is thicker than the first stress relief layer 107b.

[0078] According to the surface light emitting device 20, the same effects as those of the surface light emitting device 10 of the first embodiment can be obtained, and by making the first stress relief layer 107b relatively thick, the decrease in the oxidation rate of the oxidized constriction layer 107a can be further suppressed.

[0079] <3. Surface light emitting device according to Example 3 of one embodiment of the present technology> FIG. 10 is a cross-sectional view of a surface light emitting device 30 according to Example 3 of an embodiment of the present technology.

[0080] The surface-emitting device 30 has a configuration similar to that of the surface-emitting device 10 of Example 1, except that, as shown in FIG. 10, the laminated structure 107 includes a plurality (e.g., two) of first stress relief layers 107b, 107d stacked on top of each other, and a plurality (e.g., two) of second stress relief layers 107c, 107e stacked on top of each other.

[0081] The first semiconductor regions of the multiple first stress relieving layers 107b, 107d may have different Al compositions (first Al compositions) or may have the same Al composition.

[0082] The second semiconductor regions 107c1, 107e1 of the second stress relief layers 107c, 107e may have different Al compositions (second Al compositions). In this case, it is preferable that the second semiconductor regions of the second stress relief layers 107c, 107e closer to the oxidized constricting layer 107a have a higher Al composition. That is, it is preferable that the Al composition of the second semiconductor region 107c1 of the second stress relief layer 107c relatively closer to the oxidized constricting layer 107a is higher than the Al composition of the second semiconductor region 107e1 of the second stress relief layer 107e relatively farther from the oxidized constricting layer 107a. This effectively suppresses the decrease in the oxidation rate of the oxidized layer 107aS, which is the material of the oxidized constriction layer 107a1, while making the shape of the oxidized structure including the oxidized portion 107a2 of the oxidized constriction layer 107a and the oxidized regions 107c2, 107e2 of the second stress relaxation layers 107c, 107e into an appropriate shape. The second semiconductor regions 107c1, 107e1 may have the same Al composition.

[0083] According to the surface-emitting device 30, the same effects as those of the surface-emitting device 10 of Example 1 can be obtained, and since there are multiple first and second stress relaxation layers, the degree of freedom in designing the Al composition distribution in the laminate structure 107 can be significantly improved, and ultimately the degree of freedom in designing the oxidation structure can be significantly improved.

[0084] At least one of the first and second stress relief layers may be provided in three or more pieces. When three or more first stress relief layers are provided, the three or more first stress relief layers may include at least two first stress relief layers having the same Al composition, or may include at least two first stress relief layers having different Al compositions. When three or more second stress relief layers are provided, the three or more second stress relief layers may include at least two second stress relief layers having the same Al composition, or may include at least two second stress relief layers having different Al compositions.

[0085] <4. Surface-emitting device according to Example 4 of one embodiment of the present technology> FIG. 11 is a cross-sectional view of a surface light emitting device 40 according to Example 4 of an embodiment of the present technology.

[0086] As shown in FIG. 11, the surface light emitting device 40 has the same configuration as the surface light emitting device 30 according to Example 3, except that the thicknesses of the multiple (eg, two) first stress relieving layers 107b, 107d are different from each other.

[0087] Here, the thickness of the first stress relaxation layer 107b, which is relatively closer to the oxidized constriction layer 107a, is thicker than the thickness of the first stress relaxation layer 107d, which is relatively farther from the oxidized constriction layer 107a, but the thickness of the first stress relaxation layer 107d may be thicker than the thickness of the first stress relaxation layer 107b.

[0088] According to the surface-emitting device 40, the same effects as those of the surface-emitting device 30 of Example 3 can be obtained, and since the thicknesses of the multiple first stress relaxation layers are different from each other, the degree of freedom in designing the Al composition distribution in the stacked structure 107 can be further improved, and ultimately the degree of freedom in designing the oxidation structure can be further improved.

[0089] The first stress relief layers 107b and 107d may have the same thickness. Three or more first stress relief layers may be provided. When three or more first stress relief layers are provided, the three or more first stress relief layers may include at least two first stress relief layers having the same thickness, or may include at least two first stress relief layers having different thicknesses.

[0090] <5. Surface-emitting device according to Example 5 of one embodiment of the present technology> FIG. 12 is a cross-sectional view of a surface light emitting device 50 according to Example 5 of an embodiment of the present technology.

[0091] As shown in FIG. 12, the surface light emitting device 50 has the same configuration as the surface light emitting device 30 according to Example 3, except that the thicknesses of the multiple (eg, two) second stress relieving layers 107c, 107e are different from each other.

[0092] Here, the thickness of the second stress relief layer 107c, which is relatively closer to the oxidized constriction layer 107a, is thicker than the thickness of the second stress relief layer 107e, which is relatively farther from the oxidized constriction layer 107a, but the thickness of the second stress relief layer 107e may be thicker than the thickness of the second stress relief layer 107c.

[0093] According to the surface-emitting device 50, the same effects as those of the surface-emitting device 30 of Example 3 can be obtained, and since the thicknesses of the multiple second stress relaxation layers are different from each other, the degree of freedom in designing the Al composition distribution in the stacked structure 107 can be further improved, and ultimately the degree of freedom in designing the oxidation structure can be further improved.

[0094] The second stress relief layers 107c and 107e may have the same thickness. Three or more second stress relief layers may be provided. When three or more second stress relief layers are provided, the three or more second stress relief layers may include at least two second stress relief layers having the same thickness, or may include at least two second stress relief layers having different thicknesses.

[0095] <6. Surface-emitting device according to Example 6 of one embodiment of the present technology> FIG. 13 is a cross-sectional view of a surface light emitting device 60 according to Example 6 of an embodiment of the present technology.

[0096] As shown in FIG. 13, the surface light emitting device 60 has the same configuration as the surface light emitting device 30 according to Example 3, except that the laminated structure 107 does not include the second stress relieving layer 107e.

[0097] According to the surface-emitting device 60, the same effects as those of the surface-emitting device 10 of Example 1 can be obtained, and since there are multiple first stress relaxation layers, the degree of freedom in designing the Al composition distribution in the laminate structure 107 can be improved, and ultimately the degree of freedom in designing the oxidation structure can be improved.

[0098] <7. Surface-emitting device according to Example 7 of one embodiment of the present technology> FIG. 14 is a cross-sectional view of a surface light emitting device 70 according to Example 7 of an embodiment of the present technology.

[0099] As shown in FIG. 14, the surface light emitting device 70 has the same configuration as the surface light emitting device 30 according to Example 3, except that the laminated structure 107 does not include the first stress relieving layer 107d.

[0100] According to the surface-emitting device 70, the same effects as those of the surface-emitting device 10 of Example 1 can be obtained, and since there are multiple second stress relief layers, the degree of freedom in designing the Al composition distribution in the stacked structure 107 can be improved, and ultimately the degree of freedom in designing the oxidation structure can be improved.

[0101] <8. Surface-emitting device according to Example 8 of one embodiment of the present technology> Example 8 FIG. 15 is a cross-sectional view of a surface light emitting device 80 according to an embodiment of the present technology.

[0102] The surface-emitting device 80 has a configuration similar to that of the surface-emitting device 10 of Example 1, except that, as shown in FIG. 15, the laminated structure 107 is arranged within the first structure ST1, for example, between the first semiconductor multilayer film reflector 103 and the first cladding layer 104.

[0103] In the surface-emitting device 80, a second stress relaxation layer 107c is arranged between the first semiconductor multilayer reflector 103 and the oxidized constriction layer 107a, and a first stress relaxation layer 107b is arranged between the oxidized constriction layer 107a and the first cladding layer 104.

[0104] According to the surface light emitting device 80, the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained.

[0105] <9. Surface-emitting device according to Example 9 of one embodiment of the present technology> FIG. 16 is a cross-sectional view of a surface light emitting device 90 according to Example 9 of an embodiment of the present technology.

[0106] The surface-emitting device 90 has a configuration generally similar to that of the surface-emitting device 10 of Example 1 and the surface-emitting device 80 of Example 8, except that, as shown in FIG. 16, the laminated structure 107 is arranged in both the first structure ST1 and the second structure ST2.

[0107] In the surface light emitting device 90, the laminated structure 107 is disposed, for example, between the first semiconductor multilayer reflector 103 and the first cladding layer 104 and between the second cladding layer 106 and the second semiconductor multilayer reflector 108.

[0108] According to the surface-emitting device 90, the same effects as those of the surface-emitting device 10 of Example 1 can be obtained, and since the laminated structure 107 is arranged on both sides of the light-emitting layer 105, the efficiency of current injection into the light-emitting layer 105 can be further improved, and thus the light-emitting efficiency can be further improved.

[0109] <10. Surface light emitting device according to Example 10 of one embodiment of the present technology> FIG. 17 is a cross-sectional view of a surface light emitting device 100 according to a tenth example of an embodiment of the present technology.

[0110] The surface light emitting device 100 has a similar configuration to the surface light emitting device 10 of Example 1, except that it has a multi-junction structure including a plurality of (eg, two) light emitting layers 105 as shown in FIG.

[0111] In the surface-emitting device 100, two structures each having a light-emitting layer 105 and first and second clad layers 104, 106 sandwiching the light-emitting layer 105 are laminated via a tunnel junction layer 114 between a first semiconductor multilayer reflector 103 and a laminate structure 107. The tunnel junction layer 114 functions to allow currents of approximately the same magnitude to flow through the two light-emitting layers 105. Note that three or more such structures may be laminated, and the tunnel junction layer 114 may be disposed between adjacent such structures.

[0112] The tunnel junction layer 114 includes a p-type semiconductor region and an n-type semiconductor region stacked on each other. Here, the p-type semiconductor region is disposed on the substrate 101 side (lower side) of the n-type semiconductor region. The p-type semiconductor region is, for example, a p-type highly doped layer (e.g., a p-GaAs layer, a p-InGaAs layer, etc.) doped with a high concentration of p-type impurities. The n-type semiconductor region is, for example, an n-type highly doped layer (e.g., an n-GaAs layer, an n-InGaAs layer, etc.) doped with a high concentration of n-type impurities.

[0113] According to the surface light emitting device 100, the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained, and since it has a multi-junction structure, it is possible to achieve high output.

[0114] <11. Surface light emitting device according to Example 11 of an embodiment of the present technology> FIG. 18 is a cross-sectional view of a surface light emitting device 115 according to an eleventh example of an embodiment of the present technology.

[0115] The surface-emitting device 115 has a configuration generally similar to that of the surface-emitting device 90 of Example 9 and the surface-emitting device 100 of Example 10, except that it has a multi-junction structure including multiple (e.g., two) light-emitting layers 105 and multiple laminated structures 107, as shown in FIG. 18.

[0116] In the surface light emitting device 115, two structures each having a light emitting layer 105 and first and second clad layers 104, 106 sandwiching the light emitting layer 105 are stacked between two stacked structures 107 stacked on each other between the first and second semiconductor multilayer film reflectors 103, 108, with a tunnel junction layer 114 interposed therebetween. Note that three or more such structures may be stacked, and the tunnel junction layer 114 may be disposed between adjacent such structures.

[0117] According to the surface light emitting device 115, the effects of both the surface light emitting device 90 according to the ninth embodiment and the surface light emitting device 115 according to the tenth embodiment can be obtained.

[0118] <12. Surface light emitting device according to Example 12 of an embodiment of the present technology> FIG. 19 is a cross-sectional view of a surface light emitting device 120 according to Example 12 of an embodiment of the present technology.

[0119] As shown in FIG. 19, the surface light emitting device 120 has the same configuration as the surface light emitting device 10 according to the first embodiment, except that an ion implantation region IIA is provided in the light emitting device portion LE.

[0120] The ion implantation region IIA is provided in a circumferential shape around the periphery of the mesa structure MS so as to surround the light emitting region of the light emitting layer 105 in a planar view. The ion implantation region IIA has a current blocking function. The inner diameter of the ion implantation region IIA is larger than the inner diameter (oxidation constriction diameter) of the oxidized portion 107a2. Here, the ion implantation region IIA is provided across the contact layer 109, the second semiconductor multilayer film reflector 108, the stacked structure 107, the second cladding layer 106, the light emitting layer 105, the first cladding layer 104, and the first semiconductor multilayer film reflector 103, but it is sufficient that the ion implantation region IIA is provided at least in the contact layer 109 and the second semiconductor multilayer film reflector 108.

[0121] According to the surface light emitting device 120, the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained, and the efficiency of current injection into the light emitting layer 105 can be increased by the ion implantation region IIA.

[0122] <13. Surface light emitting device according to Example 13 of one embodiment of the present technology> FIG. 20 is a cross-sectional view of a surface light emitting device 130 according to Example 13 of an embodiment of the present technology.

[0123] As shown in FIG. 20, the surface light emitting element 130 has a similar configuration to the surface light emitting element 10 according to the first embodiment, except that it is a surface emitting laser of a back emission type.

[0124] In the surface light emitting element 130, a solid anode electrode 111 is provided on the mesa structure MS (more specifically, on the contact layer 109), and an anode wiring 112 is provided so as to cover the mesa structure MS and the anode electrode 111. A circumferential (e.g. ring-shaped) cathode electrode 113 is provided on the back surface (lower surface) of the substrate 101 so as to surround the light emitting region of the light emitting layer 105 in plan view. The inner diameter side of the cathode electrode 113 serves as an exit port. Here, the reflectance of the second semiconductor multilayer film reflector 108 is set slightly higher than the reflectance of the first semiconductor multilayer film reflector 103.

[0125] According to the surface light emitting device 130, a back-emitting surface emitting laser that exhibits the same effects as the surface light emitting device 10 according to the first embodiment can be provided.

[0126] <14. Surface light emitting device according to Example 14 of one embodiment of the present technology> FIG. 21 is a cross-sectional view of a surface light emitting device 140 according to Example 14 of an embodiment of the present technology.

[0127] As shown in FIG. 21, the surface light emitting device 140 has a configuration generally similar to that of the surface light emitting device 130 according to the thirteenth embodiment, except that it has an intra-cavity structure.

[0128] In the surface light emitting device 140, a circumferential cathode electrode 113 is provided so as to surround the mesa structure MS on the peripheral region of the mesa structure MS on the upper surface of the first semiconductor multilayer film reflector 103. The surface light emitting device 140 does not have an anode wiring 112.

[0129] The surface light emitting element 140 is suitable for mounting, for example, junction-down (flip chip).

[0130] According to the surface light emitting device 140, it is possible to provide a back-emitting surface emitting laser that exhibits the same effects as the surface light emitting device 10 according to the first embodiment and is capable of reducing the series resistance.

[0131] <15. Surface light emitting device according to Example 15 of an embodiment of the present technology> FIG. 22 is a cross-sectional view of a surface light emitting device 150 according to Example 15 of an embodiment of the present technology.

[0132] 22, the surface light emitting device 150 has a configuration similar to that of the surface light emitting device 10 according to Example 1, except that the surface light emitting device 150 has an intra-cavity structure. The surface light emitting device 150 does not have the anode wiring 112.

[0133] According to the surface light emitting device 150, it is possible to provide a surface emission type surface emitting laser that exhibits the same effects as the surface light emitting device 10 according to the first embodiment and is capable of reducing the series resistance.

[0134] <16. Surface light emitting device according to Example 16 of an embodiment of the present technology> Fig. 23 is a cross-sectional view (part 1) of a surface light emitting device 160 according to Example 16 of an embodiment of the present technology. Fig. 24 is a cross-sectional view (part 2) of a surface light emitting device 160 according to Example 16 of an embodiment of the present technology. Fig. 25 is a plan view of a surface light emitting device 160 according to Example 16 of an embodiment of the present technology. Fig. 23 is a cross-sectional view taken along line 23-23 in Fig. 25. Fig. 24 is a cross-sectional view taken along line 24-24 in Fig. 25.

[0135] As shown in FIGS. 23 to 25, the surface light emitting device 160 has a configuration generally similar to that of the surface light emitting device 10 according to the first embodiment, except that it has a mesare-less structure.

[0136] In the surface light emitting device 160, a plurality of (e.g., eight) trenches TR (grooves) are provided as missing parts surrounding the laminated structure 107 on the surface of the light emitting device section LE on the second structure ST2 side. The plurality of trenches TR are arranged at approximately equal intervals so as to surround the non-oxidized part 107a1 of the oxidized constriction layer 107a in a plan view (see FIG. 25). Each trench TR is a groove for exposing the side surface of the material of the laminated structure 107 when the laminated structure 107 is generated by an oxidation process. The bottom surface of each trench TR is located at least closer to the substrate 101 side (for example, in the first semiconductor multilayer film reflector 103) than the oxidized constriction layer 107a (see FIG. 23). Parts of the insulating film 110 are provided along the two opposing side surfaces of the trenches TR. The number, width, depth, shape, etc. of the trenches TR can be changed as appropriate.

[0137] According to the surface light emitting device 160, it is possible to provide a surface emission type surface emitting laser having a mesare-less structure, which has the same effects as the surface light emitting device 10 according to the first embodiment.

[0138] It should be noted that a surface-emitting laser of a back-emitting type having a mesaless structure, which has a configuration generally similar to that of the surface-emitting element 160, can also be realized.

[0139] <17. Surface light emitting device according to Example 17 of an embodiment of the present technology> FIG. 26 is a cross-sectional view of a surface light emitting device 170 according to Example 17 of an embodiment of the present technology.

[0140] As shown in FIG. 26, the surface light emitting element 170 has a similar configuration to the surface light emitting element 10 according to the first embodiment, except that it is a surface emission type light emitting diode (LED).

[0141] The surface light emitting device 170 does not have the second semiconductor multilayer film reflector 108 .

[0142] In the surface-emitting element 170, the light emitted downward from the light-emitting layer 105 and reflected upward by the first semiconductor multilayer film reflector 103 and the light emitted upward from the light-emitting layer 105 are combined and emitted from an emission port on the inner diameter side of the anode electrode 111.

[0143] According to the surface light emitting device 170, it is possible to provide a surface emission type high output LED that exhibits the same effects as the surface light emitting device 10 according to the first embodiment.

[0144] <18. Surface light emitting device according to Example 18 of an embodiment of the present technology> FIG. 27 is a cross-sectional view of a surface light emitting device 180 according to Example 18 of an embodiment of the present technology.

[0145] As shown in FIG. 27, the surface light emitting element 180 has a similar configuration to the surface light emitting element 10 according to the first embodiment, except that it is a surface emission type light emitting diode (LED).

[0146] The surface light emitting device 180 does not have the first and second semiconductor multilayer film reflectors 103 and 108 .

[0147] In the surface light emitting element 180, the light emitted downward from the light emitting layer 105 and reflected upward by the cathode electrode 113 and the light emitted upward from the light emitting layer 105 are combined and emitted from an outlet on the inner diameter side of the anode electrode 111.

[0148] According to the surface light emitting device 180, it is possible to provide a surface emission type LED that exhibits the same effects as the surface light emitting device 10 according to the first embodiment.

[0149] <19. Modifications of this technology> The present technology is not limited to the examples of the above-described embodiment, and can be modified as appropriate.

[0150] For example, as shown in Fig. 28, in a surface light emitting device 10-1 according to Modification 1 of Example 1 of an embodiment, the thickness of the first stress relaxation layer 107b may be greater than the thickness of the second stress relaxation layer 107c. This can further prevent defects from occurring on the light emitting layer 105 side.

[0151] For example, a light emitting element unit array having a plurality of light emitting element units LE arranged one-dimensionally or two-dimensionally may be configured as in a surface light emitting element 10-2 according to Modification 2 of Example 1 of an embodiment shown in Fig. 29. Note that, although the anode and cathode are common here, the anode wiring 112 may be separated between the light emitting element units LE to provide independent anodes. In this case, each light emitting element unit LE can be driven independently.

[0152] 30, the laminated structure 107 may be disposed between the tunnel junction layer 114 and the upper light emitting layer 105 (more specifically, between the tunnel junction layer 114 and the upper first cladding layer 104). Here, the first stress relaxation layer 107b is disposed above the second stress relaxation layer 107c, but the first stress relaxation layer 107b may be disposed below the second stress relaxation layer 107c.

[0153] For example, as shown in Fig. 31, in a surface light emitting device 100-2 according to Modification 2 of Example 10 of an embodiment, the laminated structure 107 may be disposed between the tunnel junction layer 114 and the lower light emitting layer 105 (more specifically, between the tunnel junction layer 114 and the lower second cladding layer 106). Here, the first stress relaxation layer 107b is disposed below the second stress relaxation layer 107c, but the first stress relaxation layer 107b may be disposed above the second stress relaxation layer 107c.

[0154] 32, the upper laminated structure 107 may be disposed between the tunnel junction layer 114 and the upper light emitting layer 105 (more specifically, between the tunnel junction layer 114 and the upper first cladding layer 104). Here, in the upper laminated structure 107, the first stress relaxation layer 107b is disposed above the second stress relaxation layer 107c, but the first stress relaxation layer 107b may be disposed below the second stress relaxation layer 107c.

[0155] 33, the lower laminated structure 107 may be disposed between the tunnel junction layer 114 and the lower light emitting layer 105 (more specifically, between the tunnel junction layer 114 and the lower second cladding layer 106). Here, in the lower laminated structure 107, the first stress relaxation layer 107b is disposed below the second stress relaxation layer 107c, but the first stress relaxation layer 107b may be disposed above the second stress relaxation layer 107c.

[0156] In a surface-emitting device having a multi-junction structure having a plurality of light-emitting layers 105 and at least one laminate structure 107, in addition to or instead of the positions between the light-emitting layers 105, a tunnel junction layer may be provided at a position other than between the light-emitting layers 105.

[0157] In a single junction structure having a single light emitting layer 105 and a surface light emitting device having at least one laminated structure 107, a tunnel junction layer may be provided.

[0158] In the surface-emitting devices according to each of the above embodiments and modified examples, the laminate structure 107 may be provided in at least one of the first semiconductor multilayer reflector 103, the second semiconductor multilayer reflector 108, the first cladding layer 104, and the second cladding layer 106.

[0159] In the surface light emitting devices according to the above-mentioned respective embodiments and modifications, the buffer layer 102 may not be provided.

[0160] In the surface emitting devices (particularly surface emitting lasers) according to the above-mentioned embodiments and modifications, the first and second cladding layers 104, 106 may not be provided.

[0161] In the surface light emitting devices according to the above-mentioned respective embodiments and modifications, the contact layer 109 may not be provided.

[0162] In the above embodiments and modifications, the surface light emitting device has been mainly described as being GaAs-based (material system lattice-matched to GaAs), but the present technology is not limited thereto and can also be applied to surface light emitting devices such as InP-based (material system lattice-matched to InP), GaN-based (material system lattice-matched to GaN), etc. Examples of InP-based devices include AlGaInP-based, AlGaInAs-based, and AlInAs-based devices.

[0163] That is, materials that emit light at any wavelength within the wavelength range of 200 to 2000 nm can be used for the surface light emitting device.

[0164] At least one of the first and second structures ST1, ST2 is not limited to a semiconductor multilayer film reflector, and may in fact have a reflector made of one or a combination of two or more materials selected from semiconductors, dielectrics, and metals.

[0165] In the surface light emitting devices according to the above embodiments and modifications, the conductivity types (p-type and n-type) of the first and second semiconductor structures may be reversed. In this case, however, the positional relationship between the anode electrode and the cathode electrode must also be reversed.

[0166] Parts of the configurations of the surface light emitting devices according to the above-described embodiments and modifications may be combined within a range that does not contradict each other.

[0167] In each of the above embodiments and modifications, the arrangement, material, conductivity type, thickness, width, value, shape, size, etc. of each layer constituting the surface-emitting device can be appropriately changed within the range in which the surface-emitting device functions.

[0168] <20. Application examples to electronic devices> The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, a robot, or a low-power consumption device (for example, a smartphone, a smart watch, a tablet, a mouse, etc.).

[0169] The surface light emitting device according to the present technology can also be used as a light source for devices that form or display images using light (for example, printers, copiers, projectors, head-mounted displays, head-up displays, etc.).

[0170] <21. Example of application of surface light emitting element to distance measuring device> An application example of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology will be described below.

[0171] 34 shows an example of a schematic configuration of a distance measurement device 1000 (distance measuring device) including a surface light emitting element 10, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject S by a TOF (Time Of Flight) method. The distance measurement device 1000 includes a surface light emitting element 10. The distance measurement device 1000 includes, for example, the surface light emitting element 10, a light receiving device 125, lenses 128 and 138, a signal processing unit 145, a control unit 155, a display unit 165, and a storage unit 175.

[0172] The light receiving device 125 receives the light emitted from the surface light emitting device 10 and reflected by the subject S (object). That is, the light receiving device 125 detects the light reflected by the subject S. The lens 128 is a lens for converting the light emitted from the surface light emitting device 10 into parallel light, such as a collimator lens. The lens 138 is a lens for collecting the light reflected by the subject S and guiding it to the light receiving device 125, such as a collecting lens.

[0173] The signal processing unit 145 is a circuit for generating a signal corresponding to the difference between the signal input from the light receiving device 125 and the reference signal input from the control unit 155. The control unit 155 is configured to include, for example, a Time to Digital Converter (TDC). The reference signal may be a signal input from the control unit 155, or may be an output signal of a detection unit that directly detects the output of the surface light emitting device 10. The control unit 155 is, for example, a processor that controls the surface light emitting device 10, the light receiving device 125, the signal processing unit 145, the display unit 165, and the storage unit 175. The control unit 155 is a circuit that measures the distance to the subject S based on the signal generated by the signal processing unit 145. The control unit 155 generates a video signal for displaying information about the distance to the subject S and outputs it to the display unit 165. The display unit 165 displays information about the distance to the subject S based on the video signal input from the control unit 155. The control unit 155 stores information about the distance to the subject S in the storage unit 175.

[0174] In this application example, instead of the surface-emitting element 10, any of surface-emitting elements 10-1, 10-2, 20, 30, 40, 50, 60, 70, 80, 90, 100, 100-1, 100-2, 115, 115-1, 115-2, 120, 130, 140, 150, 160, 170, and 180 can also be applied to the distance measurement device 1000.

[0175] <22. Example of distance measuring device installed on a moving object> FIG. 35 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology according to the present disclosure can be applied.

[0176] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 35, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.

[0177] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle according to various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0178] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.

[0179] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-mentioned distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object (subject S) outside the vehicle, and acquires distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing of people, cars, obstacles, signs, etc. based on the acquired distance data.

[0180] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.

[0181] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0182] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0183] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0184] The audio / video output unit 12052 transmits at least one output signal of audio and video to an output device capable of visually or audibly notifying information to passengers in the vehicle or the outside of the vehicle. In the example of Fig. 35, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

[0185] FIG. 36 is a diagram showing an example of the installation position of the distance measuring device 12031.

[0186] In FIG. 36 , a vehicle 12100 has distance measuring devices 12101, 12102, 12103, 12104, and 12105 as a distance measuring device 12031.

[0187] The distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at the front nose, side mirrors, rear bumper, back door, and upper part of the windshield inside the vehicle cabin of the vehicle 12100. The distance measuring device 12101 provided at the front nose and the distance measuring device 12105 provided at the upper part of the windshield inside the vehicle cabin mainly obtain data of the front of the vehicle 12100. The distance measuring devices 12102 and 12103 provided at the side mirrors mainly obtain data of the sides of the vehicle 12100. The distance measuring device 12104 provided at the rear bumper or back door mainly obtains data of the rear of the vehicle 12100. The front data obtained by the distance measuring devices 12101 and 12105 is mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, and the like.

[0188] 36 shows an example of the detection ranges of the distance measurement devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measurement device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measurement devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measurement device 12104 provided on the rear bumper or back door.

[0189] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance data obtained from the distance measuring devices 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that runs autonomously without relying on the driver's operation.

[0190] For example, the microcomputer 12051 controls the distance measuring devices 12101 to 1210 Based on the distance data obtained from the microcomputer 12051, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects such as two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and can use the data to automatically avoid obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or exceeds a set value and there is a possibility of a collision, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0191] An example of a mobile object control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the distance measuring device 12031 of the configurations described above.

[0192] The present technology can also be configured as follows. (1) a first structure including a first semiconductor structure; a second structure including a second semiconductor structure stacked with the first structure; a light-emitting layer disposed between the first and second structures; a laminated structure provided between a surface of the first structure opposite to the light-emitting layer side and a surface of the second structure opposite to the light-emitting layer side; A light-emitting element portion including: The laminate structure is An oxide constriction layer; a first stress relaxation layer disposed on the light emitting layer side of the oxide constriction layer; a second stress relaxation layer disposed on the opposite side of the oxidized constriction layer from the light emitting layer; Including, the first stress relief layer includes a first semiconductor region having a first Al composition; the second stress relief layer includes a second semiconductor region having a second Al composition; The second Al composition is higher than the first Al composition. (2) The oxidized constriction layer is A non-oxidized portion; an oxidized portion surrounding the non-oxidized portion; having the non-oxidized portion has a third Al composition, The surface light emitting device according to (1), wherein the third Al composition is higher than the second Al composition. (3) The surface-emitting device according to (1) or (2), wherein the second stress relieving layer includes an oxidized region surrounding the second semiconductor region. (4) The surface light emitting device according to (3), wherein the oxidized region has a tapered shape in which the thickness decreases toward the inner periphery. (5) The surface light emitting device according to any one of (1) to (4), wherein the difference between the second Al composition and the first Al composition is 0.1 or more. (6) The surface light emitting device according to any one of (1) to (5), wherein the second Al composition is 0.4 or more and 0.95 or less. (7) The surface light emitting device according to any one of (1) to (6), wherein the first Al composition is 0.3 or more and 0.8 or less. (8) The surface-emitting device according to any one of (1) to (7), wherein the second stress relief layer is thicker than the first stress relief layer. (9) The surface-emitting device according to any one of (1) to (8), wherein the laminated structure includes a plurality of the first stress relieving layers laminated on one another. (10) The surface light emitting device according to (9), wherein the first semiconductor regions of the plurality of first stress relaxation layers include at least two first semiconductor regions having different first Al compositions. (11) The surface-emitting device according to (9) or (10), wherein the plurality of first stress relief layers include at least two first stress relief layers having different thicknesses. (12) The surface-emitting device according to any one of (1) to (11), wherein the laminated structure includes a plurality of the second stress relieving layers laminated on one another. (13) The surface light emitting device according to (12), wherein the second semiconductor regions of the plurality of second stress relieving layers include at least two second semiconductor regions having different second Al compositions. (14) The surface light emitting device according to (13), wherein the at least two second semiconductor regions have a higher second Al composition as they are closer to the oxidized constriction layer. (15) The surface-emitting device according to any one of (12) to (14), wherein the plurality of second stress relief layers include at least two second stress relief layers having different thicknesses. (16) The surface-emitting device according to any one of (1) to (15), wherein a plurality of the light-emitting layers are laminated between the first and second structures. (17) The surface-emitting device according to any one of (1) to (16), in which a plurality of the laminate structures are stacked between a surface of the first structure opposite to the light-emitting layer side and a surface of the second structure opposite to the light-emitting layer side. (18) The surface-emitting device according to (17), wherein a plurality of the light-emitting layers are stacked between the first and second structures. (19) The surface-emitting device according to any one of (1) to (18), wherein a tunnel junction layer is disposed between the first and second structures. (20) The surface light emitting device according to any one of (1) to (19), wherein a cutout portion surrounding the laminated structure is provided on a surface of the light emitting element portion facing the second structure. [Explanation of symbols]

[0193] 10, 10-1, 10-2, 20, 30, 40, 50, 60, 70, 80, 90, 100, 100-1, 100-2, 115, 115-1, 115-2, 120, 130, 140, 150, 160, 170, 180: Surface-emitting element 101: Substrate 103: First semiconductor multilayer reflector (part of the first semiconductor structure) 104: First cladding layer (part of the first semiconductor structure) 105: Light-emitting layer 106: Second cladding layer (other part of second semiconductor structure) 107: Laminated structure 107a: Oxidized constriction layer 107a1: Non-oxidized part 107a2: Oxidized part 107b: First stress relief layer 107c: Second stress relief layer 107c1: Non-oxidized area 107c2: Oxidized area 108: Second semiconductor multilayer reflector (part of the second semiconductor structure) 109: Contact layer LE: Light emitting element ST1: 1st structure ST2: Second structure SS1: First semiconductor structure SS2: Second semiconductor structure

Claims

1. a first structure including a first semiconductor structure; a second structure including a second semiconductor structure stacked with the first structure; a light emitting layer disposed between the first and second structures; a laminated structure provided between a surface of the first structure opposite to the light-emitting layer side and a surface of the second structure opposite to the light-emitting layer side; A light-emitting element portion including: The laminate structure is An oxide constriction layer; a first stress relaxation layer disposed on the light emitting layer side of the oxide constriction layer; a second stress relaxation layer disposed on an opposite side of the oxide constriction layer from the light emitting layer; Including, the first stress relief layer includes a first semiconductor region having a first Al composition; the second stress relief layer includes a second semiconductor region having a second Al composition; The second Al composition is higher than the first Al composition.

2. The oxidized constriction layer is A non-oxidized portion; an oxidized portion surrounding the non-oxidized portion; having the non-oxidized portion has a third Al composition, The surface light emitting device according to claim 1 , wherein the third Al composition is higher than the second Al composition.

3. The surface-emitting device according to claim 1 , wherein the second stress relief layer includes an oxidized region surrounding the second semiconductor region.

4. The surface light emitting device according to claim 3 , wherein the oxidized region has a tapered shape in which the thickness decreases toward an inner circumferential end.

5. 2. The surface light emitting device according to claim 1, wherein a difference between said second Al composition and said first Al composition is 0.1 or more.

6. The surface light emitting device according to claim 1 , wherein the second Al composition is not less than 0.4 and not more than 0.

95.

7. The surface light emitting device according to claim 1 , wherein the first Al composition is not less than 0.3 and not more than 0.

8.

8. The surface light emitting device according to claim 1 , wherein the second stress relief layer is thicker than the first stress relief layer.

9. The surface-emitting device according to claim 1 , wherein the laminated structure includes a plurality of the first stress relieving layers laminated on each other.

10. The surface light emitting device according to claim 9 , wherein the first semiconductor regions of the plurality of first stress relieving layers include at least two of the first semiconductor regions having different first Al compositions.

11. The surface-emitting device according to claim 9 , wherein the plurality of first stress relief layers include at least two first stress relief layers having different thicknesses.

12. The surface-emitting device according to claim 1 , wherein the laminated structure includes a plurality of the second stress relief layers laminated on each other.

13. The surface light emitting device according to claim 12 , wherein the second semiconductor regions of the plurality of second stress relieving layers include at least two second semiconductor regions having different second Al compositions.

14. The surface light emitting device according to claim 13 , wherein the at least two second semiconductor regions have a higher second Al composition in a region closer to the oxidized constriction layer.

15. The surface-emitting device according to claim 12 , wherein the plurality of second stress relief layers include at least two second stress relief layers having different thicknesses.

16. The surface light emitting device according to claim 1 , wherein a plurality of the light emitting layers are laminated between the first and second structures.

17. The surface light emitting device according to claim 1 , wherein a plurality of said laminated structures are laminated.

18. The surface light emitting device according to claim 17 , wherein the light emitting layer is a laminate of a plurality of layers.

19. The surface-emitting device of claim 1 , further comprising a tunnel junction layer disposed between the first and second structures.

20. The surface light emitting device according to claim 1 , wherein a cutout portion surrounding the laminated structure is provided on a surface of the light emitting element portion facing the second structure.

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