Semiconductor manufacturing equipment and process

Abstract

To provide semiconductor manufacturing equipment and processes.SOLUTION: Generally, various aspects of the technology of the present disclosure relate to semiconductor manufacturing equipment and processes that can have two or more accumulators connected in parallel with each other. The equipment may have a solid precursor sublimator upstream of the two or more accumulators used by the process.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] Generally, various aspects of the disclosed technology relate to semiconductor manufacturing equipment and processes. [Background technology]

[0002] During processes such as atomic layer deposition (ALD), epitaxy, plasma-enhanced chemical vapor deposition (PECVD), diffusion (annealing) and chemical vapor deposition (CVD), precursors and other compounds, which may be in gas, liquid, or solid form, are deposited on or in contact with the workpiece. These compounds are often stored in containers or reservoirs from which they are transported to the workpiece in a reaction chamber.

[0003] ALD manufacturing processes typically involve pulsing compounds into a reaction chamber, allowing them to react with the substrate surface, and then purging the chamber before introducing the next compound.

[0004] In some systems, an accumulator may be used to store and deliver the compound to the reaction chamber. The function of the accumulator is to increase the flow of the compound into the reaction chamber.

[0005] These manufacturing processes may use a variety of different chemical compounds, each of which has specific parameters for optimal operation. Semiconductor manufacturing conditions may be adapted based on the chemical compound used.

[0006] For example, for the delivery of precursors to a reaction chamber, the flow rate of the precursor into the reactor chamber is important and can determine the throughput of the entire process. Different types of precursors may be characterized by having different flow rates, while parameters such as temperature and pressure of the system may be used to adapt the flow rate of a particular precursor.

[0007] Therefore, there may be a need for further adaptation to semiconductor manufacturing equipment and processes. Summary of the Invention

[0008] A first summary of various aspects of the technology of the present disclosure is presented herein, followed by a more detailed description of specific embodiments. This summary is intended to assist the reader in understanding technical concepts more quickly, but is not intended to identify its most important or essential features, nor to limit the scope of the present disclosure, which is limited only by the claims.

[0009] One aspect of the present disclosure relates to a semiconductor manufacturing apparatus, the apparatus comprising: · Reaction chambers in semiconductor manufacturing processes; one or more gas inlets into the reaction chamber; Two or more accumulators connected to at least one of the one or more gas inlets.

[0010] In particular, the two or more accumulators may be connected in parallel with each other.

[0011] The use of two or more accumulators connected in parallel with each other can make the manufacturing system more efficient and provide more flexibility to the system. For example, process gas can be discharged from one of the accumulators while the other accumulator is being filled with process gas. Thus, the parallel configuration of accumulators allows them to be discharged in turn and refilled while the others are being discharged. This procedure allows the "burst flow" effect to continue even after one accumulator is empty.

[0012] More specifically, the semiconductor manufacturing equipment may include two accumulators connected in parallel to each other.

[0013] Additionally, the flexibility of having multiple accumulators in parallel allows them to be used separately, but also as one accumulator if that is desired.

[0014] More specifically, the semiconductor manufacturing apparatus disclosed herein may provide that the apparatus further comprises a solid precursor sublimator upstream of the two or more accumulators.

[0015] More specifically, the semiconductor manufacturing apparatus disclosed in this specification may be specified so that the total volume of the two or more accumulators is in the range of 10 liters to 200 liters.

[0016] More specifically, the semiconductor manufacturing apparatus disclosed herein may be provided with two or more accumulators each having an equal volume.

[0017] More specifically, the semiconductor manufacturing apparatus disclosed herein may provide that the volumes of at least two of the two or more accumulators may differ.

[0018] More specifically, the semiconductor manufacturing apparatus disclosed herein provides that the conductor lines upstream and downstream of the two or more accumulators may include conductor line valves, and may further include one or more sensors for monitoring and detecting the open / closed states of the conductor line valves in real time.

[0019] More specifically, the semiconductor manufacturing apparatus disclosed herein comprises: accumulating the process gas in two or more accumulators until each of the accumulators has an accumulator pressure level that may be substantially greater than the pressure level in the reaction chamber; The method may further comprise comprising a controller including program instructions for rapidly discharging process gas from at least one of the two or more accumulators into the reaction chamber.

[0020] More specifically, the semiconductor manufacturing apparatus disclosed herein provides that the process gas may include a precursor compound. More specifically, the precursor compound may be a liquid precursor compound or a solid precursor compound. More specifically, the precursor compound may be a liquid or solid precursor containing a metal or metalloid. More specifically, the metal may be selected from an alkali metal, an alkaline earth metal, a transition metal, and a rare earth metal.

[0021] More specifically, the semiconductor manufacturing apparatus disclosed herein provides that the precursor compound may be a homoleptic or heteroleptic precursor.

[0022] More specifically, the semiconductor manufacturing apparatus disclosed in the present specification is a semiconductor manufacturing apparatus in which the precursor compound is titanium tetrachloride (TiCl 4 ), vanadium tetrachloride (VCl 4 ), molybdenum pentachloride (MoCl 5 ), molybdenum dioxide dichloride (MoO 2 Cl 2 ), niobium pentachloride (NbCl 5 ), Tantalum Pentachloride (TaCl 5 ), aluminum trichloride (AlCl 3 ), hafnium tetrachloride (HfCl 4 ), zirconium tetrachloride (ZrCl 4 ), tetrakis(ethylmethylamido)zirconium (TEMAZr), tetrakis(ethylmethylamido)hafnium (TEMAHf), trimethylborate (TMB), fluorotriethoxysilane (FTES), tetrakis-dimethylaminotitanium (TDMAT), tetrakis-diethylamino (TDEAT), CuTMVS, diethylsilane, and / or triethyl phosphate (TEPO).

[0023] The list of precursor compounds provided in this disclosure is intended to be exemplary and is not intended to exclude other compounds within the scope of the claims. Other compounds that are functionally equivalent or structurally similar to those listed are also considered to be within the scope of the methods and systems of this disclosure. This disclosure encompasses all such variations and modifications that would be apparent to one skilled in the art.

[0024] More specifically, the semiconductor manufacturing apparatus disclosed herein may provide that the controller includes program instructions for determining open / closed states of conductor line valves on conductor lines upstream and downstream of the two or more accumulators. More specifically, the controller may include program instructions for alternately storing and discharging process gas in and from the two or more accumulators, where process gas may be stored in a first accumulator while process gas may be discharged from a second accumulator, and process gas may be stored in a second accumulator when process gas is discharged from the first accumulator.

[0025] More specifically, the semiconductor manufacturing apparatus disclosed in this specification is specified to be a vertical furnace.

[0026] More specifically, the semiconductor manufacturing apparatus disclosed herein provides that the vertical furnace comprises a reaction chamber configured for chemical vapor deposition (CVD) or atomic layer deposition (ALD), the reaction chamber being configured to receive a batch of wafers contained in a wafer boat.

[0027] In a further aspect, the present disclosure provides a method for delivery of process gas to a reaction chamber for manufacturing semiconductors, the method comprising: accumulating process gas in the two or more accumulators until each of the accumulators is at an accumulator pressure level that may be substantially greater than the pressure level in the reaction chamber; rapidly discharging the process gas from at least one of the two or more accumulators into the reaction chamber.

[0028] In particular, the two or more accumulators are connected in parallel with each other.

[0029] More specifically, the methods disclosed herein provide that the process gas comprises a precursor compound. More specifically, the precursor compound may be a liquid precursor compound or a solid precursor compound. More specifically, the precursor compound may be a liquid or solid precursor comprising a metal or metalloid. More specifically, the metal may be selected from alkali metals, alkaline earth metals, transition metals, and rare earth metals.

[0030] More specifically, the methods disclosed herein provide that the precursor compound may be a homoleptic or heteroleptic precursor.

[0031] More specifically, the method disclosed herein comprises preparing a precursor compound, such as titanium tetrachloride (TiCl 4 ), vanadium tetrachloride (VCl 4 ), molybdenum pentachloride (MoCl 5 ), molybdenum dioxide dichloride (MoO 2 Cl 2 ), niobium pentachloride (NbCl 5 ), Tantalum Pentachloride (TaCl 5 ), aluminum trichloride (AlCl 3 ), hafnium tetrachloride (HfCl 4 ), zirconium tetrachloride (ZrCl 4), tetrakis(ethylmethylamido)zirconium (TEMAZr), or tetrakis(ethylmethylamido)hafnium (TEMAHf), trimethylborate (TMB), fluorotriethoxysilane (FTES), tetrakis-dimethylaminotitanium (TDMAT), tetrakis-diethylamino (TDEAT), CuTMVS, diethylsilane, and / or triethyl phosphate (TEPO).

[0032] More specifically, the method disclosed herein provides that the steps of accumulating and discharging process gas occur in alternation, thereby accumulating process gas in a first accumulator while process gas is discharged from a second accumulator, and accumulating process gas in a second accumulator as process gas is discharged from said first accumulator.

[0033] More specifically, the methods disclosed herein provide that the methods may be employed in a vertical furnace.

[0034] More specifically, the methods disclosed herein provide that the methods can be ALD methods.

[0035] The following description of the figures relates to particular embodiments of the present disclosure, which are merely exemplary in nature and are not intended to limit the present teachings, their application, or uses. [Brief description of the drawings]

[0036] [Figure 1] FIG. 1 illustrates a schematic of an exemplary system as described herein. [Figure 2A] FIG. 2A illustrates the example system of FIG. 1 in various configurations. [Figure 2B] FIG. 2B illustrates the example system of FIG. 1 in various configurations. [Figure 2C] 2C illustrates the example system of FIG. 1 in various configurations. [Figure 3A]FIG. 3A shows a graph of the pressure in the accumulator (A). [Figure 3B] FIG. 3B shows a graph of the flow rate into the reaction chamber (B). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0037] In the following detailed description, the technology underlying the present disclosure will be described according to its different aspects. It will be readily understood that the aspects of the present disclosure, as generally described herein and as illustrated in the figures, may be arranged, substituted, combined, and designed in a wide variety of different configurations, all of which are expressly contemplated and form part of the present disclosure. This description is intended to assist the reader in more easily understanding the technical concepts, but is not intended to limit the scope of the present disclosure, which is limited only by the claims.

[0038] Throughout this specification, a reference to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment of the disclosure. Thus, the use of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification do not necessarily all refer to the same embodiment.

[0039] As used herein, the terms "comprising," "comprises," and "comprised of" are synonymous with "including," "includes," or "containing," and are inclusive or open-ended and do not exclude additional, unrecited components, elements, or method steps. When the terms "comprising," "comprises," and "comprised of" refer to listed components, elements, or method steps, they also include embodiments that "consist of" said listed components, elements, or method steps. The singular forms "a," "an," and "the" include both singular and plural referents unless the context clearly dictates otherwise.

[0040] As used herein, relative terms such as "left," "right," "front," "rear," "top," "bottom," "above," "below," and the like, are used for descriptive purposes and not necessarily to describe permanent relative positions. It is to be understood that such terms are interchangeable under appropriate circumstances and that the embodiments as described herein are operable in orientations other than those illustrated or described herein, unless the context clearly dictates otherwise.

[0041] Objects described herein as "adjacent" to one another reflect a functional relationship between the objects described: that is, the term indicates that the objects described must be adjacent to each other to perform the specified function, as appropriate to the context in which the phrase is used, which may be direct (i.e., physical) contact or indirect (i.e., in close proximity or vicinity) contact.

[0042] Objects described herein as "connected" or "coupled" reflect a functional relationship between the objects described, that is, the terms indicate that the objects described must be connected to perform a specified function, as appropriate to the context in which the term is used, and this may be in a direct or indirect connection in an electrical or non-electrical (i.e., physical) manner.

[0043] The term "substantially" as used herein refers to the complete or nearly complete extent or degree of an action, feature, characteristic, state, structure, item, or result. For example, an object being "substantially" enclosed would mean that the object is completely enclosed or nearly completely enclosed. The exact acceptable degree of deviation from absolute perfection may in some cases depend on the particular circumstances. Generally speaking, however, near perfection is such that one would have the same overall result as if absolute and total perfection had been obtained. The use of "substantially" is equally applicable when used in the negative sense to refer to a complete or nearly complete lack of an action, feature, characteristic, state, structure, item, or result.

[0044] As used herein, the term "about" is used to provide flexibility to numerical values ​​or range endpoints by providing that a given value may be "slightly above" or "slightly below" said value or endpoint, depending on the particular context. Unless otherwise stated, the use of the term "about" in conjunction with a particular number or numerical range should also be understood to support such numerical term or range without the term "about". For example, a statement of "about 30" should be interpreted as supporting not only values ​​slightly above and slightly below 30, but also the actual numerical value 30 as well.

[0045] The recitation of numerical ranges by endpoints includes all numbers and fractions subsumed within each range, as well as the recited endpoints. Moreover, the terms first, second, third, etc. in this description and claims are used to distinguish between similar elements, unless otherwise specified, and are not necessarily used to describe an order or chronology. It is to be understood that the terms so used are interchangeable under appropriate circumstances, and that the embodiments of the disclosure described herein are capable of operating in orders other than those described or illustrated herein.

[0046] Reference herein may be made to devices, structures, systems, or methods that "improve" performance (e.g., increase or decrease results, depending on the context). Unless otherwise stated, it should be understood that such "improvement" is a measure of benefit obtained based on a comparison with a prior art device, structure, system, or method. Furthermore, it should be understood that the degree of performance improvement may vary among the disclosed embodiments, and that uniformity or consistency in the amount, degree, or realization of performance improvement should not be assumed to be universally applicable.

[0047] Furthermore, embodiments of the present disclosure may include hardware, software, and electronic components or modules, which for purposes of discussion may be illustrated and described as if the majority of the components were implemented solely in hardware. However, upon reading this detailed description, one skilled in the art will recognize that in at least one embodiment, electronic-based aspects of the present disclosure may be implemented in software (e.g., instructions stored on a non-transitory computer-readable medium) executable by one or more processing devices, such as a microprocessor and / or an application-specific integrated circuit. As such, it should be noted that multiple hardware and software-based devices, as well as multiple different structural components, may be utilized to implement the techniques of the present disclosure. For example, the "server" and "computing device" described herein may include one or more processing devices, one or more computer-readable media modules, one or more input / output interfaces, and various connections connecting the components.

[0048] A summary of various aspects of the technology of the present disclosure is provided herein below, followed by a more detailed description of specific embodiments. This summary is intended to aid the reader in understanding technical concepts more quickly, but is not intended to identify its most important or essential features, nor to limit the scope of the present disclosure, which is limited only by the claims. In describing specific embodiments, reference is made to the accompanying drawings, which are provided solely to aid in understanding the described embodiments.

[0049] Disclosed herein are microfabrication methods and systems in which two or more accumulators connected in parallel to each other are used for the delivery of compounds, particularly precursors, to a reaction chamber. Typically, due to space constraints, one accumulator per reaction chamber is used in semiconductor manufacturing systems and methods. Accumulators can be used in microfabrication processes and systems to ensure increased and controlled delivery of compounds to a reaction chamber. Accumulators allow for precise pulse control, ensuring that only the desired amount of compound is introduced during each step.

[0050] It has now been found that significant improvements to microfabrication methods and systems can be achieved by introducing two or more accumulators connected in parallel to each other into the system. Although the use of multiple accumulators makes the systems and methods more complex (e.g., requiring more conductor lines, valves and controllers), it has been found that two or more accumulators connected in parallel to each other can achieve more uniform reaction conditions, facilitate management of multiple compounds, provide more process flexibility, accommodate flow rate variations, accommodate different chemistries, and enhance the overall efficiency and control of the microfabrication system and process. The use of two or more accumulators connected in parallel to each other also helps to reduce pulse frequency, thereby further improving overall process efficiency.

[0051] Accordingly, an aspect of the present disclosure relates to a semiconductor manufacturing apparatus, the apparatus comprising: · Reaction chambers in semiconductor manufacturing processes; one or more gas inlets into the reaction chamber; two or more accumulators connected to at least one of the one or more gas inlets.

[0052] In particular, the two or more accumulators may be connected in parallel with each other.

[0053] More specifically, the semiconductor manufacturing equipment may include two accumulators connected in parallel to each other.

[0054] As referred to herein, the term "compound" refers to a compound used in semiconductor manufacturing techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma-enhanced chemical vapor deposition (PECVD), diffusion (annealing), and epitaxy. The compound may be selected based on the particular process to be carried out in the reaction chamber. The compound may be in gaseous, liquid, or solid form and may be a reactant, such as a precursor.

[0055] In certain embodiments, the compounds referred to herein are precursor compounds. More specifically, the methods and systems according to the present disclosure provide that the compounds can be precursors. More specifically, the precursors can be liquid or solid precursors. During a typical semiconductor manufacturing process, the substrate undergoes multiple deposition cycles that typically include precursor and reactant pulses. After a certain amount of deposition cycles, the method ends. During these precursor pulses, the vaporized liquid or solid precursors can be transported to a reaction chamber. This can be done by using a carrier gas to generate a process gas that includes the carrier gas and the vaporized precursor, which can then be fed to the reaction chamber. This typically occurs in a pulse train in which the transport of the precursor to the reaction chamber occurs at specific time intervals.

[0056] As used herein, the term "process gas" refers to a gas that includes compounds used in semiconductor manufacturing equipment. Often, liquid or solid compounds may be used in a semiconductor manufacturing process or equipment, and the compounds may be vaporized (evaporated for liquid precursors or sublimated for solid precursors) and delivered in gaseous form to the reaction chamber. In addition to compounds used in semiconductor manufacturing equipment, process gases may include N 2 The mixture may further include a carrier gas such as argon, Ar, He, or a combination thereof.

[0057] As referred to herein, the term "process chamber" or "reactor chamber" refers to a reaction chamber that may be coupled to a compound delivery system. The reaction chamber may comprise an internal volume having a substrate support disposed therein for supporting a substrate (such as a semiconductor wafer) to be processed. The reaction chamber may be configured for ALD, CVD, and the like. The reaction chamber may further comprise a processing system including additional components, such as one or more radio frequency or other energy sources, for example, for generating a plasma within the internal volume or for providing a radio frequency bias to a substrate disposed on the substrate support.

[0058] As referred to herein, the term "accumulator" refers to a component that stores compounds, such as precursor gases, and facilitates their controlled delivery to a reaction chamber. The accumulator acts as a buffer and ensures a steady and continuous supply of compounds during the deposition process.

[0059] Additionally, as referred to herein, "parallel connection" or "connected in parallel" refers to a configuration in which two or more accumulators are connected side-by-side and share common inlet and outlet points. In this arrangement, the accumulators are interconnected in parallel, allowing material to flow simultaneously into and through each accumulator before reaching the reaction chamber.

[0060] The use of two or more accumulators connected in parallel to each other allows compounds to be loaded in parallel while deposition can continue, ensuring continuous operation and reducing process downtime. This setup allows one accumulator to deliver compound while the other can be recharged or refilled.

[0061] As a result, the semiconductor manufacturing apparatus disclosed herein allows for improved regulation of compound flow into the reaction chamber, allowing for increased flow while maintaining constant concentration levels, enhancing process control, promoting uniform film growth, and enabling management of multiple compounds in microfabricated systems.

[0062] Additionally, the use of two or more accumulators connected in parallel with one another may allow for deposition of different materials in alternating fashion. The use of multiple accumulators connected in parallel can be utilized to store and deliver different compounds, allowing for rapid and controlled switching between deposition of different compounds.

[0063] Also, by using semiconductor manufacturing equipment or systems in which two or more accumulators are connected in parallel with each other, the systems disclosed herein can become much more flexible. This may enable microfabrication processes that require the use of combinations of compounds that are incompatible with each other or that need to be kept separate until they reach the reaction chamber. The use of multiple accumulators allows for independent storage and delivery of different compounds, allowing precise control over compound mixing and preventing premature or undesired chemical reactions before entering the reaction chamber.

[0064] More specifically, the semiconductor manufacturing apparatus disclosed herein provides that the apparatus may further comprise a solid precursor sublimator upstream of the two or more accumulators.

[0065] As referred to herein, the term "precursor sublimator" refers to a component in a microfabrication system where a solid compound, such as a precursor material, is converted to a gas phase by applying heat or energy. The vaporized compound, preferably a precursor material, can then be transported to a reaction chamber through two or more accumulators. Typically, the compound is stored in a storage vessel and transported to the sublimator as needed in the deposition process. Separating the storage of the compound from the sublimator allows for controlled and precise deposition in the manufacturing process while helping to ensure proper handling, containment, and preservation of the compound's properties.

[0066] More specifically, the semiconductor manufacturing apparatus disclosed herein may specify that the total volume of the two or more accumulators is in the range of 0.10 liters to 200 liters, preferably 1 liter to 200 liters, and more preferably 10 liters to 200 liters. More specifically, the total volume of the two or more accumulators is in the range of 10 liters to 100 liters. The total volume of the two or more accumulators may be preferably 10 liters, 15 liters, 20 liters, 30 liters, 40 liters, 50 liters, 60 liters, 70 liters, 80 liters, 90 liters, or 100 liters. Typically, the total volume of the two or more accumulators may be about 10% of the volume of the reaction chamber.

[0067] More specifically, the semiconductor manufacturing apparatus disclosed in this specification provides that the two or more accumulators may each have an equal volume.

[0068] The use of two or more accumulators of equal volume in a system provides several advantages and features. By using accumulators of equal size, the system ensures balanced compound delivery and increases redundancy. Connecting accumulators of equal volume in parallel allows for simultaneous operation, splitting compound flow equally between them. This redundancy helps maintain process continuity even if one accumulator experiences a problem or requires maintenance, minimizing downtime and interruptions in the deposition process. Additionally, accumulators of equal volume may provide increased flow capacity, allowing for higher compound throughput when compared to a single accumulator. This may be beneficial for applications where higher deposition rates or larger scale processing are desired. Using multiple accumulators with equal volumes may enhance system reliability, process robustness, and / or overall efficiency.

[0069] Alternatively, the semiconductor manufacturing apparatus disclosed herein provides that at least two of the two or more accumulators may have different volumes.

[0070] The use of two or more accumulators with various volumes may enhance the flexibility and control of the system. By incorporating accumulators of various sizes or capacities, the system may gain the ability to process various amounts of compounds and meet specific process requirements. Larger accumulators may accommodate larger volumes, allowing for extended periods of operation before requiring refilling or recharging. On the other hand, smaller accumulators provide advantages in situations where precise and rapid switching between different precursor materials or concentrations is required. The use of multiple accumulators with different volumes may allow fine tuning of precursor delivery to ensure continuous and steady flow and / or optimize the process for efficient and reliable deposition. This flexibility may facilitate adjustment of deposition parameters to accommodate changes in compound availability and allow customization of the process based on specific material requirements or experimental needs. Finally, employing multiple accumulators with various volumes may add versatility to the system, contributing to improved control and adaptability in the deposition process.

[0071] More specifically, the semiconductor manufacturing apparatus disclosed herein may provide that the conductor lines upstream and downstream of the two or more accumulators include conductor line valves, and may further include one or more sensors for monitoring and detecting the open / closed states of the conductor line valves in real time.

[0072] A "conductor line" defines a connection between different components of a semiconductor manufacturing apparatus, for example, a connection connecting an accumulator to a reaction chamber. The conductor line thus directs a compound through the semiconductor manufacturing apparatus to the reaction chamber.

[0073] As used herein, the term "conductor line valve" refers to a valve that controls the flow of compounds to and from the accumulator and to and from the reaction chamber. The conductor line valve may be located near the accumulator, particularly downstream and / or upstream of the accumulator on a portion of the conductor line that has not yet branched. In fact, the conductor line may branch between the accumulator and the reaction chamber (e.g., branching to a vent system), but the conductor line valve may be located near the accumulator downstream and / or upstream of the accumulator on the non-branched portion of the conductor line.

[0074] The flow rate of the compound through the conductor line may be measured using a flow meter (such as a mass flow meter (MFM)) positioned on the conductor line. The flow meter may determine the flow rate of the compound through the conductor line.

[0075] Purge valves may also be used on the purge lines to allow purging of the conductor lines, accumulators, and / or reaction chambers. Purging can be performed with an inert gas between compound pulses to clean the reaction chamber and remove compounds that are not attached to the surface after a particular pulse. In certain embodiments, filling of at least one of the accumulators may occur during a purge time, a reactant pulse time, and / or a reactant purge time.

[0076] More specifically, the semiconductor manufacturing apparatus disclosed herein may provide that the apparatus further comprises a high conductor line between the sublimator and the two or more accumulators.

[0077] A high conductor line in the context of this disclosure refers to a conductor line that allows a high flow rate of a compound to pass through the conductor line. Typical flow rates for high conductor lines range from several hundred sccm to several slm. It should be noted that the same flow rates can be obtained for both high and low conductance lines. The difference is the pressure drop that occurs over the line for the same flow rate.

[0078] More specifically, the semiconductor manufacturing apparatus disclosed in the present specification comprises: accumulating process gas in two or more accumulators until each of the accumulators has an accumulator pressure level that may be substantially greater than the pressure level in the reaction chamber; The method may further comprise comprising a controller including program instructions for rapidly discharging the process gas from at least one of the two or more accumulators into the reaction chamber.

[0079] More specifically, the system according to the present disclosure is defined such that the controller or system controller may be configured to display information regarding the accumulation and discharge of process gas from each of the accumulators on a graphical user interface (GUI), and preferably the controller or system controller may be further configured to generate a warning / alarm message on the GUI when an error occurs during operation of the semiconductor manufacturing process or apparatus.

[0080] A "controller" may be coupled to various components of a processing system to control their operation. A controller generally comprises a central processing unit (CPU), memory, and support circuits for the CPU. The controller may directly control the processing system or may control it through a computer (or controller) associated with a particular reaction chamber and / or support system components. The controller may be one of any form of general-purpose computer processor that may be used in industrial settings to control various chambers and sub-processors. The memory, or computer readable medium, of the CPU may be one or more of readily available memories such as random access memory (RAM), NAND memory, read-only memory (ROM), floppy disk, hard disk, flash, or any other form of digital storage (local or remote). Support circuits are coupled to the CPU to support the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input / output circuits, subsystems, etc. The methods described herein may be stored in memory as software routines that may be executed or called to control the operation of the processing system in the manner described herein. The software routines may also be stored and / or executed by a second CPU, which may be located remotely from the hardware controlled by the CPU.

[0081] More specifically, the semiconductor manufacturing apparatus disclosed herein provides that the process gas includes a precursor compound. More specifically, the precursor compound may be a liquid precursor compound or a solid precursor compound. More specifically, the precursor compound may be a liquid or solid precursor containing a metal or metalloid. More specifically, the metal may be selected from an alkali metal, an alkaline earth metal, a transition metal, and a rare earth metal.

[0082] More specifically, the semiconductor manufacturing apparatus disclosed herein provides that the precursor compound may be a homoleptic or heteroleptic precursor.

[0083] In particular, in the method and system according to the present disclosure, the precursor may be a solid precursor comprising a metal or metalloid. More specifically, the metal may be selected from an alkali metal, an alkaline earth metal, a transition metal, a rare earth metal, or a combination thereof. More specifically, the metalloid, i.e., an element having intermediate properties between those of a metal and those of a nonmetal, may be silicon, boron, germanium, arsenic, antimony, and / or tellurium. The solid precursor may also include one or more ligands, the one or more ligands being selected from H, halogen, alkyl, alkenyl, alkyne, carbonyl, dienyl, beta-diketonate, substituted or unsubstituted cyclodienyl, substituted or unsubstituted aryl, or a combination thereof. Suitable halogens include F, Br, Cl, and / or I. Suitable alkyl, alkenyl, alkyne, dienyl, cyclodienyl are typically C1-C8 compounds. Suitable substituents on cyclodienyl and aryl include C1-C3 alkyl. Suitable beta-diketonates include 1,1,1,5,5,5-hexafluoropentane-2,4-dionate (hfac) and / or 2,4-pentanedione (hacac). In certain embodiments, the solid precursor may be a homoleptic compound (a metal compound in which all the ligands are the same) or a heteroleptic compound (a metal compound with two or more different types of ligands). In more particular embodiments, the solid precursor comprises a metal-carbon bond. In more particular embodiments, the solid precursor comprises a pi-complex.

[0084] More specifically, the semiconductor manufacturing apparatus disclosed herein is a process for producing a semiconductor material having a solid precursor compound, which is titanium tetrachloride (TiCl 4 ), vanadium tetrachloride (VCl 4 ), molybdenum pentachloride (MoCl 5 ), molybdenum dioxide dichloride (MoO 2Cl 2 ), niobium pentachloride (NbCl 5 ), Tantalum Pentachloride (TaCl 5 ), aluminum trichloride (AlCl 3 ), hafnium tetrachloride (HfCl 4 ), zirconium tetrachloride (ZrCl 4 ) may be selected from.

[0085] In particular, in the methods and systems according to the present disclosure, the precursor is a liquid precursor comprising a metal, and more particularly, the metal may be selected from an alkali metal, an alkaline earth metal, a transition metal, a rare earth metal, or a combination thereof. The liquid precursor may also comprise one or more ligands, the one or more ligands being selected from H, halogen, alkyl, alkenyl, alkyne, carbonyl, dienyl, beta-diketonate, substituted or unsubstituted cyclodienyl, substituted or unsubstituted aryl, or a combination thereof. Suitable halogens include F, Br, Cl, and / or I. In certain embodiments, the liquid precursor may be a homoleptic compound (a metal compound in which all the ligands are the same) or a heteroleptic compound (a metal compound with two or more different types of ligands). In more particular embodiments, the liquid precursor comprises a metal-carbon bond. In more particular embodiments, the liquid precursor comprises a pi-complex. Exemplary liquid precursors are tetrakis(ethylmethylamido)zirconium (TEMAZr), tetrakis-ethylmethylaminohafnium (TEMAHf), trimethylborate (TMB), fluorotriethoxysilane (FTES), tetrakis-dimethylaminotitanium (TDMAT), tetrakis-diethylamino (TDEAT), CuTMVS, diethylsilane, and / or triethyl phosphate (TEPO). The list of precursor compounds provided in this disclosure is intended to be exemplary and is not intended to exclude other compounds that are within the scope of the claims. Other compounds that are functionally equivalent or structurally similar to those listed are also considered to be within the scope of the methods and systems of this disclosure. This disclosure encompasses all such variations and modifications that would be apparent to one of ordinary skill in the art.

[0086] More specifically, the semiconductor manufacturing apparatus disclosed herein provides that the liquid precursor compound may be tetrakis(ethylmethylamido)hafnium (TEMAHf) and / or tetrakis(ethylmethylamido)zirconium (TEMAZr), trimethylborate (TMB), fluorotriethoxysilane (FTES), tetrakis-dimethylaminotitanium (TDMAT), tetrakis-diethylamino (TDEAT), CuTMVS, diethylsilane, and / or triethyl phosphate (TEPO).

[0087] More specifically, the semiconductor manufacturing apparatus disclosed herein provides that the controller includes program instructions for determining open / closed states of conductor line valves on upstream and downstream conductor lines from the two or more accumulators. More specifically, the controller includes program instructions for alternately storing and discharging process gas in and from the two or more accumulators, where process gas may be stored in a first accumulator while process gas is discharged from a second accumulator, and process gas may be stored in a second accumulator when process gas is discharged from the first accumulator.

[0088] More specifically, the semiconductor manufacturing equipment disclosed herein may be specified as being a vertical furnace.

[0089] More specifically, the semiconductor manufacturing apparatus disclosed herein may provide that the vertical furnace comprises a reaction chamber configured for chemical vapor deposition (CVD) or atomic layer deposition (ALD), and more specifically, the reaction chamber may be configured to receive a batch of wafers contained within a wafer boat.

[0090] As used herein, the term "vertical furnace" refers to a type of manufacturing equipment used to deposit thin films of materials on substrates with precise control. Vertical furnaces or reactors may be used for oxidation, diffusion, annealing, chemical vapor deposition (CVD), and atomic layer deposition (ALD). Vertical furnaces typically include a reaction chamber that separates the process regions. The reaction chamber may be configured for ALD, CVD, etc., and may be a long reaction chamber, preferably made of quartz or silicon carbide. Typically, a batch of wafers, housed in a wafer boat placed on a pedestal for support and thermal isolation, is inserted vertically into the reaction chamber. The reaction chamber may include inlets and exhaust for process gases and may be surrounded by one or more heating elements.

[0091] Particularly for vertical furnaces where large volumes of wafers are processed, the use of two or more accumulators connected in parallel with each other can provide significant improvements to micro-machining methods and systems.

[0092] In a further aspect, the present disclosure provides a method for delivery of process gas to a reaction chamber for manufacturing semiconductors, the method comprising: accumulating process gas in the two or more accumulators until each of the accumulators is at an accumulator pressure level that may be substantially greater than the pressure level in the reaction chamber; rapidly discharging the process gas from at least one of the two or more accumulators into the reaction chamber.

[0093] In particular, the two or more accumulators are connected in parallel with each other.

[0094] More specifically, the methods disclosed herein provide that the process gas comprises a precursor compound. More specifically, the precursor compound may be a liquid precursor compound or a solid precursor compound. More specifically, the precursor compound may be a liquid or solid precursor comprising a metal or metalloid. More specifically, the metal may be selected from alkali metals, alkaline earth metals, transition metals, and rare earth metals.

[0095] More specifically, the methods disclosed herein provide that the precursor compound may be a homoleptic or heteroleptic precursor.

[0096] More specifically, the method disclosed herein comprises preparing a precursor compound, such as titanium tetrachloride (TiCl 4 ), vanadium tetrachloride (VCl 4 ), molybdenum pentachloride (MoCl 5 ), molybdenum dioxide dichloride (MoO 2 Cl 2 ), niobium pentachloride (NbCl 5 ), Tantalum Pentachloride (TaCl 5 ), aluminum trichloride (AlCl 3 ), hafnium tetrachloride (HfCl 4 ), zirconium tetrachloride (ZrCl 4 ), tetrakis(ethylmethylamido)zirconium (TEMAZr), or tetrakis(ethylmethylamido)hafnium (TEMAHf), trimethylborate (TMB), fluorotriethoxysilane (FTES), tetrakis-dimethylaminotitanium (TDMAT), tetrakis-diethylamino (TDEAT), CuTMVS, diethylsilane, and / or triethyl phosphate (TEPO).

[0097] More specifically, the methods disclosed herein provide that the steps of accumulating and discharging the process gas occur alternately, whereby the process gas is accumulated in a first accumulator while the process gas may be discharged from a second accumulator, and the process gas is accumulated in a second accumulator when the process gas may be discharged from the first accumulator.

[0098] More specifically, the methods disclosed herein provide that the methods are used in a vertical furnace.

[0099] More specifically, the methods disclosed herein provide that the methods can be ALD methods. In an ALD system, the use of two or more accumulators connected in parallel with each other can be particularly advantageous for precursors with low vapor pressure (both liquid and solid), whose temperature cannot be increased due to limitations associated with the decomposition of the precursor at high temperatures (or any other thermal budget limitations), for example.

[0100] Another aspect of the present disclosure relates to one or more non-transitory computer-readable media encoded with a computer program, the computer program including instructions that, when executed by one or more computers, cause the one or more computers to perform operations for storing and / or discharging process gas in and / or from the two or more accumulators.

[0101] An exemplary system as described herein is shown in FIG. 1. FIG. 1 illustrates a system according to yet an additional exemplary embodiment of the present disclosure. The system can be used to perform a method as described herein and / or to form a structure or device part as described herein. In the illustrated example of an ALD system (similar configurations are applicable to other semiconductor manufacturing systems), the system can include a sublimator (1) fluidly connected to a first accumulator (2a) and a second accumulator (2b) through conductor lines. The first accumulator (2a) and the second accumulator (2b) can be connected in parallel with each other. The first accumulator (2a) and the second accumulator (2b) can be further fluidly connected to a reaction chamber (3). Flow through the conductors is controlled by manifold valves (4A-F).

[0102] Figures 2A, 2B and 2C show a system similar to Figure 1 in three successive configurations. First, in Figure 2A, by opening valves 4A, 4B and 4D and closing valves 4C, 4E and 4F, process gas flows from the sublimator to both accumulators, thereby accumulating in both the first accumulator (2a) and the second accumulator (2b). In Figure 2B, valves 4A, 4B, 4E and 4F are open and valves 4C and 4D are closed. As a result, process gas remains accumulated in the first accumulator (2a) while it is discharged from the second accumulator (2b) towards the reaction chamber (3). When the process gas in the second accumulator (2b) is depleted, the configuration switches to that of Figure 2C, with valves 4A, 4C, 4D and 4F open and valves 4B and 4E closed. As a result, process gas begins to accumulate in the second accumulator (2b) while the process gas is discharged from the second accumulator (2a) towards the reaction chamber (3). The configurations can be switched between Figures 2B and 2C to maintain a continuous flow of process gas into the reaction chamber (3).

[0103] Purge valves may also be used on the purge lines to allow purging of the conductor lines, accumulators, and / or reaction chambers. Purging can be done with an inert gas. In ALD processes, there is typically a purge step after each precursor pulse step, which is used to clean the system and remove any precursor that has not adhered to the surface after a particular pulse.

[0104] Figure 3A shows a graph of the pressure in the first and second accumulators, starting with the discharge of process gas from the first accumulator, followed by the discharge from the second accumulator, while at the same time the process gas is accumulated in the first accumulator and vice versa. This procedure is repeated several times, alternating each time between the first and second accumulators. Figure 3B shows a graph of the flow rate (Qp) of process gas into the reaction chamber, comparing a procedure (A) in which the two accumulators operate alternately with a procedure in which there is a constant flow rate (S) of process gas into the reaction chamber. [Explanation of symbols]

[0105] 1 sublimator 2a First Accumulator 2b Second Accumulator 3. Reaction chamber 4A Valve 4B Valve 4C Valve 4D Valve 4E Valve 4F Valve

Claims

1. A semiconductor manufacturing apparatus comprising: a reaction chamber; one or more gas inlets into the reaction chamber; two or more accumulators connected to at least one of the one or more gas inlets; The two or more accumulators are connected in parallel with each other.

2. The semiconductor manufacturing apparatus of claim 1 , wherein the apparatus further comprises a solid precursor sublimator upstream of the two or more accumulators.

3. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the total volume of the two or more accumulators is in the range of 10 liters to 200 liters.

4. The semiconductor manufacturing apparatus of claim 3 , wherein each of the two or more accumulators has an equal volume.

5. The semiconductor manufacturing apparatus of claim 3 , wherein at least two of the two or more accumulators have different volumes.

6. 2. The semiconductor manufacturing equipment of claim 1, wherein the semiconductor manufacturing equipment comprises conductor lines upstream and downstream of the two or more accumulators, the conductor lines comprising conductor line valves.

7. The apparatus, accumulating process gas in the two or more accumulators until each of the accumulators has an accumulator pressure level substantially greater than the pressure level in the reaction chamber; 2. The semiconductor manufacturing apparatus of claim 1, further comprising: a controller including program instructions for rapidly discharging the process gas from at least one of the two or more accumulators into the reaction chamber.

8. 8. The semiconductor manufacturing apparatus of claim 7, wherein the process gas comprises a vaporized liquid or solid precursor compound that contains a metal or metalloid.

9. The precursor compound is titanium tetrachloride (TiCl ４ ), vanadium tetrachloride (VCl ４ ), molybdenum pentachloride (MoCl ５ ), molybdenum dioxide dichloride (MoO ２ C ２ ), niobium pentachloride (NbCl ５ ), Tantalum Pentachloride (TaCl ５ ), aluminum trichloride (AlCl ３ ), hafnium tetrachloride (HfCl ４ ), zirconium tetrachloride (ZrCl ４ ), tetrakis(ethylmethylamido)zirconium (TEMAZr) or tetrakis(ethylmethylamido)hafnium (TEMAHf) trimethylborate (TMB), fluorotriethoxysilane (FTES), tetrakis-dimethylaminotitanium (TDMAT), tetrakis-diethylamino (TDEAT), CuTMVS, diethylsilane, and triethyl phosphate (TEPO).

10. 8. The semiconductor manufacturing apparatus of claim 7, wherein the controller comprises program instructions for alternately storing and discharging process gas in and from the two or more accumulators, wherein process gas is stored in a first accumulator while process gas is discharged from a second accumulator, and wherein process gas is stored in a second accumulator when process gas is discharged from the first accumulator.

11. 8. The semiconductor manufacturing equipment of claim 7, wherein the semiconductor manufacturing equipment is a vertical furnace and the reaction chamber is configured to receive a batch of wafers contained in a wafer boat.

12. 1. A method for delivering process gas to a reaction chamber for semiconductor manufacturing, comprising: accumulating process gas in two or more accumulators until each of said accumulators has an accumulator pressure level substantially greater than the pressure level in said reaction chamber; rapidly discharging the process gas from at least one of the two or more accumulators into the reaction chamber; The method, wherein the two or more accumulators are connected in parallel with each other.

13. The method of claim 12 , wherein the process gas comprises a vaporized liquid or solid precursor compound containing a metal or metalloid.

14. The precursor compound is titanium tetrachloride (TiCl ４ ), vanadium tetrachloride (VCl ４ ), molybdenum pentachloride (MoCl ５ ), molybdenum dioxide dichloride (MoO ２ C ２ ), niobium pentachloride (NbCl ５ ), Tantalum Pentachloride (TaCl ５ ), aluminum trichloride (AlCl ３ ), hafnium tetrachloride (HfCl ４ ), zirconium tetrachloride (ZrCl ４ ), tetrakis(ethylmethylamido)zirconium (TEMAZr) or tetrakis(ethylmethylamido)hafnium (TEMAHf), trimethylborate (TMB), fluorotriethoxysilane (FTES), tetrakis-dimethylaminotitanium (TDMAT), tetrakis-diethylamino (TDEAT), CuTMVS, diethylsilane, and triethyl phosphate (TEPO).

15. 13. The method of claim 12, wherein the steps of accumulating and discharging the process gas occur in alternating fashion, thereby accumulating process gas in a first accumulator while process gas is discharged from a second accumulator, and accumulating process gas in the second accumulator as process gas is discharged from the first accumulator.

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