Detection system and detection method capable of detecting ripple defect of quartz wafer

Abstract

To provide a detection system and a detection method which have detection capability for ripple defects of a quartz wafer.SOLUTION: A detection system includes a light source device, a coaxial imaging device, and a dimmer. The coaxial imaging device is used to irradiate a quartz wafer with illumination light, after receiving the illumination light and allowing the illumination light to pass through an objective lens set in the form of coaxial illumination. The illumination light passing through the objective lens set has an oblique component that is incident obliquely on the quartz wafer and a vertical component that is incident vertically on the quartz wafer. The illumination light is defined to have an axis. The dimmer partially blocks the illumination light and is used to make the oblique component asymmetric with respect to the axis. Thus, ripple defects on the quartz wafer can be appeared in a detection image.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The technical field of the present disclosure relates to optical detection technology, and in particular to a detection system and method capable of detecting ripple marks on a quartz wafer. [Background technology]

[0002] Quartz materials are used in various electronic products due to their inherent properties (low loss, small thermal expansion coefficient, piezoelectric effect, etc.) For example, quartz crystal units are widely used in communication products such as mobile phones and network equipment.

[0003] In the manufacturing process of quartz wafers, defects may occur when the crystal lattice is formed, and these defects tend to lead to ripple marks on the manufactured quartz wafers. Ripple marks are caused by the etching rate of the quartz wafer differing in all directions during the etching process, which affects the performance of the manufactured quartz chips and may cause them to fail inspection, resulting in a decrease in yield. As quartz chips become thinner, the impact of ripple marks becomes greater, making it more difficult to improve yields. Summary of the Invention [Problem to be solved by the invention]

[0004] In some embodiments of the detection system and method of the present disclosure, the detection capability of ripple marks on quartz wafers is improved.

[0005] In the detection system and detection method according to some embodiments of the present disclosure, the problem of difficulty in detecting ripple marks is solved, thereby improving the yield.

[0006] By improving the ability to detect ripple marks on quartz wafers, it is possible to check for ripple marks on the quartz wafers before they enter the subsequent process to be made into individual quartz chips, thereby preventing defective wafers from being sent to the subsequent process and reducing the yield of the final product. [Means for solving the problem]

[0007] According to some embodiments, a detection system capable of detecting ripple marks on a quartz wafer is provided, the detection system including a light source device, a coaxial imaging device, and a light control device. The light source device is used to emit illumination light. The coaxial imaging device is used to receive the illumination light, pass the objective lens set in the form of coaxial illumination, and then irradiate the quartz wafer. The coaxial imaging device is also used to obtain a detection image of the quartz wafer. The light control device is disposed between the light source device and the coaxial imaging device, and is used to partially block the illumination light. The illumination light that has passed through the objective lens set becomes an oblique component that is obliquely incident on the quartz wafer and a vertical component that is perpendicularly incident on the quartz wafer, and the illumination light is defined as having an axis, and the light control device is used to make the oblique component appear asymmetric with respect to the axis.

[0008] According to some embodiments, the dimmer includes a blocking portion that blocks illumination light and a light-transmitting portion that allows illumination light to pass through, and the area of ​​the blocking portion can be configured to be larger than that of the light-transmitting portion.

[0009] According to some embodiments, illumination light incident on a dimmer defines a cross-sectional area through which the light passes on an axis, the cross-sectional area being defined as having four quadrants, and the dimmer may be configured to block at least two of the four quadrants of the cross-sectional area.

[0010] According to some embodiments, illumination light incident on a dimmer defines a cross-sectional area through which the light passes on an axis, the cross-sectional area being defined as having four quadrants, and the dimmer may be configured to block three of the four quadrants of the cross-sectional area.

[0011] According to some embodiments, a dimmer may be configured with a movable blocking member for selectively blocking a portion of illumination light incident on the dimmer.

[0012] According to some embodiments, the shielding member may have two acting portions, one acting portion may be used to pass all of the illumination light incident on the dimmer device, and the other acting portion may be used to partially block the illumination light incident on the dimmer device.

[0013] According to some embodiments, the other working portion is defined as having a blocking portion that blocks the illumination light and a light-transmitting portion that transmits the illumination light, and the blocking portion has a larger area than the light-transmitting portion. Note that, in some embodiments, the light-transmitting portion may be configured to have a sector-shaped opening with an opening angle of 90 degrees or less.

[0014] According to some embodiments, a method for detecting ripple marks on a quartz wafer is provided, which is used in a coaxial imaging device for focusing an illumination light on a quartz wafer after passing through an objective lens set to obtain a detection image, characterized in that the illumination light passing through the objective lens set is partially blocked so that the illumination light has an oblique component obliquely incident on the quartz wafer and a vertical component perpendicularly incident on the quartz wafer, the illumination light is defined as having an axis, and the oblique component is asymmetric with respect to the axis. Effect of the Invention

[0015] Therefore, by configuring the coaxial imaging device, ripple marks on a quartz wafer can be made visible in a detection image in a specific detection environment (having specific lighting conditions), so that it is possible to check whether or not there are ripple marks on the quartz wafer before the quartz wafer enters the subsequent process and is fabricated into individual quartz chips. This makes it possible to prevent defective wafers from being sent to the subsequent process, thereby improving the yield of the entire process. [Brief description of the drawings]

[0016] [Figure 1] FIG. 1 is a schematic diagram of a quartz wafer detection system according to some embodiments. [Diagram 2] 4 is a partial schematic diagram of an illumination light on a light path according to some embodiments. [Diagram 3] 1 is a schematic diagram of the optical path of partially unobstructed illumination light passing through an objective lens set in accordance with some embodiments. [Figure 4] 1 is a schematic diagram of the optical path of partially obstructed illumination light passing through an objective lens set in accordance with some embodiments. [Diagram 5] This is a detection image of a quartz wafer obtained under the irradiation conditions of FIG. 3 (without shielding). [Figure 6] This is a detection image of a quartz wafer obtained under the irradiation conditions of FIG. 4 (the oblique component is asymmetric). [Figure 7] This is a detected image of a quartz wafer obtained under illumination conditions in which only symmetric oblique component illumination light is incident on the quartz wafer. [Figure 8] 1 is a schematic diagram of a light control device according to a first embodiment. [Figure 9] FIG. 11 is a schematic diagram of a light control device according to a second embodiment. [Figure 10] FIG. 11 is a schematic diagram of a light control device according to a third embodiment. [Figure 11] FIG. 11 is a schematic diagram of a light control device according to a fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] In order to make the objects, features and effects of the present invention fully comprehensible, the present invention will be described in detail below in conjunction with specific embodiments and the accompanying drawings.

[0018] As used herein, the terms "a" or "one" are used to describe a unit, component, structure, device, module, system, site, or area. This is done merely for convenience and to give a general sense of the scope of the invention. This description should be read to include one or at least one, and the singular also includes the plural unless it is clear that it is meant otherwise.

[0019] As used herein, the terms "including," "comprising," "having," or any other variation thereof, are not necessarily limited to just those components, but may also include other components not expressly listed or inherent to such unit, component, structure, device, module, system, portion, or area.

[0020] The coaxial imaging device can integrate the illumination light into the imaging path, i.e., the coaxial imaging device makes the axis (e.g., the central axis) of the illumination light coaxial with the imaging axis, thereby irradiating the illumination light to the test object in the form of coaxial illumination, and obtaining a detection image of the illuminated test object. The coaxial imaging device is suitable for many detection environments that require uniform illumination, and has been widely used in various optical detection systems.

[0021] 1 is a schematic diagram of a quartz wafer detection system according to some embodiments. The detection system includes a light source device 100, a coaxial imaging device 200, and a light control device 300.

[0022] The light source device 100 is used to emit an illumination light L1. The light control device 300 is used to adjust the illumination light L1 emitted by the light source device 100. The coaxial imaging device 200 receives the adjusted illumination light L2 and illuminates the quartz wafer 400 in the form of coaxial illumination. The coaxial imaging device 200 includes an objective lens set 210, and forms an illumination light L3 that is focused on the quartz wafer 400 after the illumination light L2 passes through the objective lens set 210. In some other embodiments, the light control device 300 can also be integrated into the coaxial imaging device 200 to achieve the same adjustment function.

[0023] As shown in FIG. 1, the illumination light L1 emitted by the light source device 100 is partially blocked based on the adjustment action provided by the dimming device 300 to form an adjusted illumination light L2. The adjusted illumination light L2 passes through the reflecting member 201 and the dispersing member 202, and then illuminates the quartz wafer 400 on the imaging path of the imaging unit 220 to form a coaxial illumination condition. The adjusted illumination light L2 passes through the objective lens set 210 to form an illumination light L3 focused on the quartz wafer 400. The reflected light LR of the illuminated quartz wafer 400 passes through the objective lens set 210 and the dispersing member 202 to enter the imaging unit 220 and generate a detection image. In some other embodiments, the reflecting member 201 can be omitted, and for example, the light source device 100 is configured to be side-incident to the coaxial imaging device 200, and the illumination light L1 is emitted to irradiate toward the dispersing member 202.

[0024] Next, FIG. 2 is a partial schematic diagram of illumination light on a light path according to some embodiments. The illumination light L1 emitted from the light source device 100 defines a cross-sectional area A on an arbitrary plane with the light traveling direction as a normal vector, for example, a light point formed on the real object plane. The illumination light L1 emitted from the light source device 100 can be defined as having an axis C perpendicular to the plane to which the cross-sectional area A belongs, for example, a central axis or an optical axis of the objective lens set 210. The axis C can be used as a comparison standard to indicate the relative pattern (e.g., symmetric or asymmetric) of the light irradiated toward the test object. From the example of FIG. 2, the illumination light L1 emitted from the light source device 100 exhibits a pattern symmetric with respect to the axis C.

[0025] 3 and 4, Fig. 3 is a schematic diagram of an optical path of partially unobstructed illumination light passing through an objective lens set according to some embodiments, and Fig. 4 is a schematic diagram of an optical path of partially obstructed illumination light passing through an objective lens set according to some embodiments. For convenience of explanation, Fig. 3 and Fig. 4 are simplified by omitting reflective or spectroscopic optical elements that do not affect the optical path focused on the quartz wafer 400. Whether the illumination light is partially obstructed represents the difference between the two in terms of the amount of illumination light.

[0026] As shown in Fig. 3, the illumination lights L11, L12, and L13 emitted from the light source device 100 are not blocked, and after passing through the objective lens set 210, each form a corresponding parallel light and focus on the quartz wafer 400. These lights focused on the quartz wafer 400 include a vertical component L12' that is perpendicular to the quartz wafer 400 and oblique components L11' and L13' that are obliquely incident on the quartz wafer 400. As can be seen from Fig. 3, the partially unblocked illumination lights, after passing through the objective lens set, present a symmetrical pattern with respect to the axis C, regardless of whether the vertical component or the oblique component is incident on the quartz wafer 400.

[0027] As shown in Fig. 4, the illumination light L13 emitted from the light source device 100 is blocked (not shown), and the illumination light L12 is half blocked, and the remaining light passes through the objective lens set 210, and then forms corresponding parallel light, respectively, and focuses on the quartz wafer 400. These lights focused on the quartz wafer 400 respectively include a vertical component L12' that is perpendicularly incident on the quartz wafer 400 and an oblique component L11' that is obliquely incident on the quartz wafer 400. As can be seen from Fig. 4, after the remaining light of the partially blocked illumination light passes through the objective lens set, the oblique component that is incident on the quartz wafer 400 exhibits an obviously asymmetric pattern with respect to the axis C (the oblique component L13' is blocked and cannot enter the quartz wafer 400).

[0028] Next, referring to FIG. 5 to FIG. 7, FIG. 5 is a detection image of a quartz wafer obtained under the irradiation conditions based on FIG. 3 (no shielding), FIG. 6 is a detection image of a quartz wafer obtained under the irradiation conditions of FIG. 4 (the oblique component is asymmetric), and FIG. 7 is a detection image of a quartz wafer obtained under irradiation conditions in which only symmetric oblique component irradiation light is incident on the quartz wafer (to be further explained with FIG. 3, the illumination light L12 is blocked). The test object used was a quartz wafer having a ripple mark. As can be seen from FIG. 5 to FIG. 7, if the oblique component of the irradiation light incident on the quartz wafer 400 is asymmetric and the irradiation light incident on the quartz wafer 400 has a vertical component at the same time, the ripple mark is made apparent (FIG. 6). Note that the ripple mark cannot be shown in FIG. 5 and FIG. 7. Therefore, in order for the detection image to show the ripple mark, the oblique component of the irradiation light incident on the quartz wafer 400 must be asymmetric and must also have a vertical component at the same time. Although the vertical component is asymmetric under the illumination conditions of FIG. 4, in some other embodiments the vertical component can also be configured as symmetric.

[0029] Example 1 Next, referring to FIG. 8, FIG. 8 is a schematic diagram of a light control device of Example 1. The light control device 300 includes a light-transmitting portion 310 and a blocking portion 320. The light-transmitting portion 310 is for transmitting illumination light, and is configured as, for example, a through hole or a light-transmitting member having a light transmittance of more than 90%. The blocking portion 320 is for blocking illumination light, and is configured as, for example, a non-light-transmitting member or a light-transmitting member having a light transmittance of less than 10%. The adjustment region 301 of the light control device may correspond to, for example, the cross-sectional region A shown in FIG. 2. The area of ​​the blocking portion 320 is configured to be larger than that of the light-transmitting portion 310. In the example of FIG. 8, the light-transmitting portion 310 is a sector-shaped opening having an opening angle of more than 90 degrees.

[0030] Example 2 Next, referring to FIG. 9, FIG. 9 is a schematic diagram of a light control device of Example 2. Illumination light L1 incident on the light control device 300 defines a cross-sectional area A through which the light passes on an axis C. The cross-sectional area A is defined as having four quadrants, and the light control device 300 is used to block at least two quadrants of the four quadrants of the cross-sectional area A. As shown in the example of FIG. 9, the light control device 300 is used to block three quadrants (where the blocking portion 320 is arranged) of the four quadrants of the cross-sectional area A, leaving only one quadrant (where the transparent portion 310 is arranged) to allow the remaining illumination light L1 to pass. The light control device 300 can also be configured to block a larger area and leave only an area smaller than one quadrant to allow the remaining illumination light L1 to pass. The transparent portion 310 is a sector-shaped opening with an opening angle equal to 90 degrees in the example of FIG. 9.

[0031] Example 3 Next, referring to FIG. 10, FIG. 10 is a schematic diagram of a light control device of Example 3. The light control device 300 includes a movable shielding member 302. The shielding member 302 is provided with two action parts A1 and A2, the action part A1 is for passing all the illumination light incident on the light control device 300, and the action part A2 is for partially shielding the illumination light incident on the light control device 300. The movable shielding member 302 can provide operational flexibility, that is, it can be operated to selectively place the action part A1 or the action part A2 on the light path area B according to the detection requirements, thereby adjusting the illumination light incident on the light control device 300. This kind of detection system with a coaxial imaging device can also provide various other detection functions at the same time, so that the movable shielding member 302 provides the detection system with higher flexibility and convenience, and maximizes the use of the space occupied by the detection system.

[0032] The action part A1 is defined as having a light-transmitting part 312 that can transmit all of the illumination light. The action part A2 is defined as having a light-transmitting part 311 (for example, configured as a through hole or a light-transmitting member with a light transmittance of more than 90%) that can transmit most or all of the illumination light, and a blocking part 321 (for example, configured as a non-light-transmitting member or a light-transmitting member with a light transmittance of less than 10%) that cannot transmit most or all of the illumination light. The light-transmitting part 311 can be configured as a sector-shaped opening having an opening angle of 90 degrees or less or at least less than 180 degrees, and the light-transmitting part 311 shown in FIG. 10 is a sector-shaped opening having an opening angle of less than 90 degrees.

[0033] In each of the above-mentioned embodiments, the cross-sectional area A of the light spot, the action part A1, and the action part A2 are all circular (for example, the light source of the light source device 100 is provided by LEDs arranged in a circle), but light sources forming light spots of other shapes are also applicable to each embodiment. In addition, the size of the opening angle of each light-transmitting part (310, 311) with respect to the axis C can be selected according to the actual lighting requirements and the incident light source (light spot shape). When the light spot has a circular or approximately circular shape, the size of the opening angle of the light-transmitting part (310, 311) can be configured to be at least less than 180 degrees under the asymmetric arrangement of the oblique component of the irradiation light incident on the quartz wafer 400. On the other hand, when the light spot has a shape other than a circle, the size of the light-transmitting part (310, 311) can be configured based on the purpose of asymmetric arrangement of the oblique component of the irradiation light incident on the quartz wafer 400.

[0034] Example 4 Next, referring to FIG. 11, FIG. 11 is a schematic diagram of a light control device of Example 4. The illumination light L1 incident on the light control device 300 is defined as having a cross-sectional area A through which the light passes on the axis C. A sector area (i.e., the light-transmitting portion 310) with the axis as a vertex is defined in the cross-sectional area A, and the light control device 300 is used to block the non-sector area in the cross-sectional area A. Compared with the embodiment of FIG. 9, in the embodiment shown in FIG. 11, the light control device 300 can adjust the sector area (i.e., the light-transmitting portion 310) to cover both the first quadrant area and the fourth quadrant area in order to further improve the contrast of the defect display, and form the adjusted illumination light L2 by passing the illumination light L1 of the sector area (i.e., the light-transmitting portion 310). In addition, the sector area (i.e., the light-transmitting portion 310) can be adjusted to cover the area of ​​other quadrants as necessary, i.e., the sector area (i.e., the light-transmitting portion 310) can be rotated around the axis C as necessary to obtain a better image quality. In the example of Fig. 11, the sector area (i.e., light-transmitting portion 310) is configured as a sector opening with an opening angle less than 90 degrees. In other embodiments in which the light spot is circular about axis C, the sector area (i.e., light-transmitting portion 310) can be configured as a sector opening with an opening angle equal to 90 degrees or at least less than 180 degrees.

[0035] Therefore, in the detection method for revealing the ripple marks on the quartz wafer, the illumination light is mainly passed through an objective lens set and then focused on the quartz wafer, which is the object to be inspected, to obtain a detection image, and the technique for revealing the ripple marks on the quartz wafer is to partially block the illumination light. This blocking is for the illumination light passing through the objective lens set to include an oblique component that is obliquely incident on the quartz wafer and a vertical component that is perpendicularly incident on the quartz wafer. Note that the illumination light is defined as having an axis, and the oblique component must be asymmetric with respect to the axis. In this way, by adjusting or modifying a part of the coaxial imaging device on the conventional detection system, the detection system can be given the ability to detect the ripple marks on the quartz wafer.

[0036] In short, the detection system and detection method disclosed in the embodiments can, by using a coaxial imaging device configuration, make ripple marks on a quartz wafer visible in a detection image in a specific detection environment, thereby solving the problem of ripple marks being difficult to detect and improving yields.

[0037] The present invention has been disclosed in the above best embodiment, but those skilled in the art can understand that this embodiment is merely used to explain the present invention and should not be understood as limiting the scope of the present invention. It should be noted that all modifications and replacements having the same effect as this embodiment are included in the scope of the present invention. Therefore, the protection scope of the present invention is subject to the definition of the claims. [Explanation of symbols]

[0038] 100 Light source device 200 Coaxial imaging device 201 Reflective material 202 Spectroscopic components 210 Objective Lens Set 220 Imaging unit 300 Dimmer 301 Adjustment area 302 Shielding material 310 Translucent part 311 Translucent part 312 Translucent part 320 Breaking section 321 Breaking section 400 Quartz Wafer A cross-sectional area A1 Action part A2 Action part B Optical path area L1 illumination light L11 Illumination light L11' diagonal component L12 illumination light L12' vertical component L13 illumination light L13' diagonal component L2 illumination light L3 Illumination light LR reflected light

Claims

1. a light source device for emitting illumination light; a coaxial imaging device for receiving the illumination light and directing the illumination light through an objective lens set in the form of coaxial illumination and then illuminating a quartz wafer; a light control device disposed between the light source device and the coaxial imaging device; A detection system capable of detecting ripple marks on the quartz wafer, comprising: A detection system in which the illumination light passing through the objective lens set becomes an oblique component that is obliquely incident on the quartz wafer and a vertical component that is perpendicularly incident on the quartz wafer, the illumination light being defined as having an axis, and the dimmer is used to partially block the illumination light and make the oblique component asymmetric with respect to the axis.

2. The detection system of claim 1 , wherein the dimmer comprises a movable blocking member for selectively blocking a portion of the illumination light incident on the dimmer.

3. The detection system of claim 2, wherein the shielding member has two acting portions, one acting portion being used to pass all of the illumination light incident on the dimmer, and the other acting portion being used to partially block the illumination light incident on the dimmer.

4. The detection system according to claim 3 , wherein the other acting portion is defined as having a blocking portion that blocks the illumination light and a light-transmitting portion that transmits the illumination light, and an area of ​​the blocking portion is larger than that of the light-transmitting portion.

5. The detection system of claim 4 , wherein the light transmitting portion has a sector-shaped opening with an opening angle of 90 degrees or less.

6. The detection system according to claim 1 , wherein the light adjustment device includes a blocking portion that blocks the illumination light and a light transmitting portion that transmits the illumination light, and an area of ​​the blocking portion is larger than that of the light transmitting portion.

7. 2. The detection system of claim 1, wherein the illumination light incident on the dimmer defines a cross-sectional area through which light passes on the axis, the cross-sectional area being defined as having four quadrants, and the dimmer is used to block at least two of the four quadrants of the cross-sectional area.

8. The detection system of claim 7 , wherein the dimmer is adapted to shade three of the four quadrants of the cross-sectional area.

9. A method for detecting ripple marks on a quartz wafer used in a coaxial imaging device for acquiring a detection image by focusing illumination light on a quartz wafer after passing through an objective lens set, characterized in that the illumination light that passes through the objective lens set is partially blocked so that it has an oblique component that is obliquely incident on the quartz wafer and a vertical component that is perpendicularly incident on the quartz wafer, the illumination light being defined as having an axis, and the oblique component being asymmetric with respect to the axis.

10. The detection method of claim 9, wherein the illumination light is defined as having a cross-sectional area through which light passes on the axis, a sector area having the axis as an apex is defined within the cross-sectional area, and the illumination light is partially blocked by blocking a portion other than the sector area.

11. The method of claim 10 , wherein the sector area is a sector aperture having an aperture angle of 90 degrees or less.

12. 10. The method of claim 9, wherein the illumination light defines a cross-sectional area through which light passes on the axis, the cross-sectional area being defined as having four quadrants, and the illumination light is partially blocked by blocking at least two of the four quadrants.

13. 10. The method of claim 9, wherein the illumination light defines a cross-sectional area through which light passes on the axis, the cross-sectional area being defined as having four quadrants, and the illumination light is partially blocked by blocking three of the four quadrants.

14. 10. The detection method of claim 9, wherein the illumination light defines a cross-sectional area through which light passes on the axis, the cross-sectional area being defined to have four quadrant areas, and the illumination light is configured to be partially blocked only in a light passing area smaller than one quadrant area.

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