Differential evacuation device and method for producing electronic device

Abstract

To provide a differential evacuation device of an EUV light generation system.SOLUTION: A differential evacuation device includes a connecting pipe that connects a first chamber that outputs extreme ultraviolet light, a second chamber, a first opening 911, and a first partitioning plate 912 that surrounds the first opening 911. It also contains a first partition wall arranged in the connecting pipe such that the extreme ultraviolet light passes through the first opening 911, a second opening 921 smaller than the first opening 911, and a second partitioning plate 922 that surrounds the second opening 921. The device is equipped with a second partition wall 92 arranged to the connecting pipe so that the extreme ultraviolet light that passes through the first opening 911 can also pass through the second opening 921, and a first exhaust port 61 that discharges gas of a first differential evacuation chamber between the first partition wall 91a and the second partition wall 92, and a first partition wall 91a is arranged in such a way that the second opening 921 is surrounded by the outer part of the first high-pressure region, which has the highest pressure in the pressure distribution on the side of the first differential exhaust chamber of the second partitioning plate 922.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a differential pumping apparatus and a method for manufacturing an electronic device. [Background technology]

[0002] In recent years, with the miniaturization of semiconductor processes, the miniaturization of transfer patterns in optical lithography in the semiconductor process has progressed rapidly. In the next generation, microfabrication of 10 nm or less will be required. For this reason, there are high expectations for the development of semiconductor exposure equipment that combines a device for generating extreme ultraviolet (EUV) light with a wavelength of approximately 13 nm and a reduced projection reflective optical system.

[0003] As an EUV light generation apparatus, development is underway of an LPP (Laser Produced Plasma) type apparatus that uses plasma generated by irradiating a target material with laser light. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] US Patent Application Publication No. 2009 / 314967 [Patent Document 2] Summary of U.S. Patent Application Publication No. 2004 / 046949

[0005] A differential exhaust device according to one aspect of the present disclosure comprises a connecting pipe connecting a first chamber that outputs extreme ultraviolet light and a second chamber into which the extreme ultraviolet light is input, the second chamber having a lower pressure than the first chamber, a first opening, and a first partition plate surrounding the first opening, a first partition wall arranged on the connecting pipe such that the extreme ultraviolet light passes through the first opening, a second opening smaller than the first opening, and a second partition plate surrounding the second opening, a second partition wall arranged on the connecting pipe such that the extreme ultraviolet light that has passed through the first opening passes through the second opening, and a first exhaust port for exhausting gas in the first differential exhaust chamber between the first partition wall and the second partition wall, wherein the first partition wall is arranged so that the second opening is surrounded by a portion outside a first high pressure region which has the highest pressure in the pressure distribution on the first differential exhaust chamber side of the second partition plate.

[0006] A method for manufacturing an electronic device according to one aspect of the present disclosure includes a differential pumping apparatus including a connecting pipe connecting a first chamber that outputs extreme ultraviolet light and a second chamber into which the extreme ultraviolet light is input and which has a lower pressure than the first chamber, a first opening, and a first partition plate surrounding the first opening, a first partition wall arranged in the connecting pipe so that the extreme ultraviolet light passes through the first opening, a second opening smaller than the first opening, and a second partition plate surrounding the second opening, and a first partition wall arranged in the connecting pipe so that the extreme ultraviolet light that has passed through the first opening passes through the second opening. the first partition is disposed so that the second opening is surrounded by a portion outside a first high pressure region having the highest pressure in a pressure distribution on the first differential exhaust chamber side of the second partition plate; and a first chamber, generating extreme ultraviolet light by an extreme ultraviolet light generation system including a differential exhaust device and a first chamber, outputting the extreme ultraviolet light to an exposure apparatus including the second chamber, and exposing a photosensitive substrate to the extreme ultraviolet light in the exposure apparatus to manufacture an electronic device.

[0007] A method for manufacturing an electronic device according to one aspect of the present disclosure includes a differential pumping apparatus including a connecting pipe connecting a first chamber that outputs extreme ultraviolet light and a second chamber into which the extreme ultraviolet light is input and which has a lower pressure than the first chamber, a first opening, and a first partition plate surrounding the first opening, a first partition wall arranged in the connecting pipe so that the extreme ultraviolet light passes through the first opening, a second opening smaller than the first opening, and a second partition plate surrounding the second opening, and a first partition wall arranged in the connecting pipe so that the extreme ultraviolet light that has passed through the first opening passes through the second opening. the first partition being disposed so that the second opening is surrounded by a portion outside a first high pressure region having the highest pressure in a pressure distribution on the first differential pumping chamber side of the second partition plate, the first differential pumping chamber side being surrounded by a portion outside a first high pressure region having the highest pressure in a pressure distribution on the first differential pumping chamber side of the second partition plate, the method comprising: irradiating a mask with extreme ultraviolet light generated by an extreme ultraviolet light generation system having a differential pumping device and a first chamber, selecting a mask using the results of the inspection, and exposing and transferring a pattern formed on the selected mask onto a photosensitive substrate. [Brief description of the drawings]

[0008] Some embodiments of the present disclosure will now be described, by way of example only, with reference to the accompanying drawings. [Figure 1] FIG. 1 shows the configuration of an LPP-type EUV light generation system according to a comparative example. [Diagram 2] FIG. 2 shows the configuration of the EUV light generation apparatus shown in FIG. [Diagram 3] FIG. 3 shows the configuration of the differential pumping device shown in FIG. [Figure 4] FIG. 4 shows the configuration of the differential pumping device according to the first embodiment. [Diagram 5] FIG. 5 shows the dimensions of each part of the differential pumping device shown in FIG. [Figure 6] FIG. 6 shows the results of a simulation of pressure distribution on the first differential evacuation chamber side of the second partition plate in the comparative example. [Figure 7]FIG. 7 shows a simulation result of pressure distribution on the first differential evacuation chamber side of the second partition plate in the first embodiment. [Figure 8] FIG. 8 shows the position of the first exhaust port in the differential exhaust system shown in FIG. [Figure 9] FIG. 9 shows the configuration of a differential pumping apparatus according to the second embodiment. [Figure 10] FIG. 10 shows the dimensions of each part of the differential pumping device shown in FIG. [Figure 11] FIG. 11 shows the position of the first exhaust port in the differential exhaust system shown in FIG. [Figure 12] FIG. 12 shows the configuration of a differential pumping apparatus according to a modified example of the second embodiment. [Figure 13] FIG. 13 shows the configuration of a differential pumping apparatus according to the third embodiment. [Figure 14] FIG. 14 is a perspective view of the first partition shown in FIG. [Figure 15] FIG. 15 shows the configuration of a differential pumping apparatus according to a modified example of the third embodiment. [Figure 16] FIG. 16 is a perspective view of the first bulkhead shown in FIG. [Figure 17] FIG. 17 shows the configuration of a differential pumping apparatus according to the fourth embodiment. [Figure 18] FIG. 18 shows a schematic configuration of an exposure apparatus connected to an EUV light generation system. [Figure 19] FIG. 19 shows a schematic configuration of an inspection apparatus connected to an EUV light generation system. Embodiment

[0009] <Contents> 1. Comparative Example 1.1 Configuration 1.2 Operation 2. Issues with the comparative examples 3. Differential exhaust device 90a in which first partition 91a is arranged at an angle 3.1 Configuration 3.2 Pressure distribution on the first differential pumping chamber 910 side of the second partition plate 922 3.3 Position of the first exhaust port 61 3.4 Effect 4. Differential pumping devices 90b and 90c in which the first opening 911 is formed at an angle 4.1 Configuration 4.2 Position of the first exhaust port 61 4.3 Variations 4.4 Effect 5. Differential pumping devices 90d and 90e in which the thickness of the first partition plate 912 is partially different 5.1 Configuration 5.2 Variations 5.3 Effect 6. Differential pumping apparatus 90f including multiple differential pumping chambers 910, 920, and 930 6.1 Configuration 6.2 Location of second and third exhaust ports 62 and 63 6.3 Effect 7.Other 7.1 Example of EUV light utilization device6 7.2 Supplementary Information

[0010] Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments described below show some examples of the present disclosure, and do not limit the contents of the present disclosure. Furthermore, not all of the configurations and operations described in each embodiment are necessarily essential as the configurations and operations of the present disclosure. Note that the same components are given the same reference symbols, and duplicated explanations will be omitted.

[0011] 1. Comparative Example 1.1 Configuration Fig. 1 shows the configuration of an LPP-type EUV light generation system 11 according to a comparative example, and Fig. 2 shows the configuration of the EUV light generation apparatus 1 shown in Fig. 1. Fig. 1 and Fig. 2 show mutually perpendicular X-, Y-, and Z-directions. Fig. 1 is a view of the EUV light generation system 11 as seen in the Y-direction, and Fig. 2 is a view of the EUV light generation apparatus 1 as seen in the Z-direction. The Y-direction is the output direction of a target 27, and the Z-direction is the output direction of EUV light.

[0012] The EUV light generation apparatus 1 is used together with a laser apparatus 3. In this disclosure, a system including the EUV light generation apparatus 1 and the laser apparatus 3 is referred to as an EUV light generation system 11. The EUV light generation apparatus 1 includes a chamber 2, a first inner wall 37, and a second inner wall 38.

[0013] The chamber 2 is a sealable container having a substantially cylindrical shape. The central axis of the cylinder is parallel to the Y direction, and the target supply part 26 and the target collection part 28 are disposed at the position of the central axis. The plasma generation region 25 is located between the target supply part 26 and the target collection part 28. The chamber 2 corresponds to the first chamber in this disclosure.

[0014] The first inner wall 37 has a cylindrical shape and penetrates the side surface of the chamber 2. The central axis of the cylinder is parallel to the X direction. A part of the first inner wall 37 is located inside the chamber 2 and is arranged to cover the plasma generation region 25. The other part of the first inner wall 37 is located outside the chamber 2 and connected to the exhaust device 30. A gate valve 39 is arranged between the first inner wall 37 and the exhaust device 30. The second inner wall 38 separates the space inside the chamber 2 and outside the first inner wall 37 into the first space 20a and the second space 20b.

[0015] Inside the chamber 2, the first inner wall 37 has first to fourth through holes 371 to 374. The first through hole 371 is configured to communicate between the second space 20b and the third space 20c inside the first inner wall 37. The second to fourth through holes 372 to 374 are configured to communicate between the first space 20a and the third space 20c.

[0016] The target supply unit 26 supplies a target 27 containing a target material into the chamber 2. The material of the target material may include tin, terbium, gadolinium, lithium, xenon, or a combination of any two or more of them.

[0017] A window 21 is disposed on the wall of the chamber 2. A pulsed laser beam 33 output from the laser device 3 passes through this window 21. A gas supply source 41 that supplies gas to the first space 20a via a first gas supply port 51 is connected to the chamber 2. The gas supplied is, for example, hydrogen gas.

[0018] An EUV collector mirror 23 having a reflective surface of an ellipsoidal shape is disposed in the second space 20b. A multilayer reflective film in which molybdenum and silicon are alternately laminated is formed on the reflective surface. The EUV collector mirror 23 has first and second focal points. The EUV collector mirror 23 is disposed such that its first focal point is located in the plasma generation region 25 and its second focal point is located at the intermediate focal point 292.

[0019] The first through-hole 371 is located in the optical path of the synchrotron radiation 251, which includes EUV light and is generated in the plasma generation region 25 and travels toward the EUV collector mirror 23. The opening 50 of the chamber 2 is located in the optical path of the reflected light 252 traveling from the EUV collector mirror 23 to the intermediate focus point 292. The EUV collector mirror 23 is disposed such that the central axis of the optical path of the reflected light 252 is inclined with respect to the central axis of the optical path of the synchrotron radiation 251.

[0020] The EUV light generation apparatus 1 includes a connecting pipe 29 connected to the opening 50 to connect the chamber 2 and a chamber of the EUV light utilization apparatus 6. The chamber of the EUV light utilization apparatus 6 corresponds to the second chamber in this disclosure. The EUV light utilization apparatus 6 may be an exposure apparatus 6a shown in FIG. 18 or an inspection apparatus 6b shown in FIG. 19. A wall (not shown) having an aperture formed at the position of the intermediate focus point 292 may be provided inside the connecting pipe 29. A gas supply source 42 that supplies gas to the second space 20b via the second gas supply port 52 and the opening 50 is connected to the connecting pipe 29. The supplied gas is, for example, hydrogen gas.

[0021] A differential pumping device 90 is disposed at a position between the intermediate focus 292 and the second gas supply port 52 in the connecting pipe 29. The differential pumping device 90 includes a part of the connecting pipe 29, first and second partitions 91 and 92 disposed in the connecting pipe 29, and a first exhaust port 61 disposed in a first differential pumping chamber 910 between the first and second partitions 91 and 92. The first partition 91 includes a first opening 911 through which the reflected light 252 passes, and a first partition plate 912 surrounding the first opening 911. The second partition 92 includes a second opening 921 smaller than the first opening 911, and a second partition plate 922 surrounding the second opening 921, and is disposed so that the reflected light 252 that passes through the first opening 911 passes through the second opening 921. An exhaust pump 31 is connected to the first exhaust port 61.

[0022] Furthermore, the EUV light generation system 1 includes a target sensor, a laser light transmission device, a processor, and the like, which are not shown. The target sensor detects at least one of the presence, trajectory, position, and speed of the target 27. The target sensor may have an imaging function. The laser light transmission device is disposed between the laser device 3 and the chamber 2, and includes an optical element for defining the transmission state of the pulsed laser light 33, and an actuator for adjusting the position, attitude, and the like of the optical element. The processor controls the entire EUV light generation system 11. The processor processes the detection result of the target sensor, and controls the timing at which the target 27 is output, the output direction of the target 27, and the like, based on the detection result of the target sensor. Furthermore, the processor controls the oscillation timing of the laser device 3, the traveling direction of the pulsed laser light 33, the focusing position of the pulsed laser light 33, and the like.

[0023] 1.2 Operation The pulsed laser light 33 output from the laser device 3 passes through the window 21 and enters the chamber 2. The pulsed laser light 33 passes through the second through-hole 372 and is guided to the plasma generation region 25.

[0024] The target 27 output from the target supply unit 26 passes through the third through hole 373 and reaches the plasma generation region 25. The target 27 is irradiated with the pulsed laser light 33. Of the multiple targets 27, the target 27 that has not been irradiated with the pulsed laser light 33 and has not been converted into plasma passes through the plasma generation region 25 and further passes through the fourth through hole 374 to reach the target recovery unit 28.

[0025] The target 27 irradiated with the pulsed laser beam 33 turns into plasma, and the plasma emits radiation 251. The radiation 251 passes through the first through-hole 371 and enters the EUV collector mirror 23. The EUV light contained in the radiation 251 is reflected by the EUV collector mirror 23 with a higher reflectance than light in other wavelength ranges. Reflected light 252 containing the EUV light reflected by the EUV collector mirror 23 is collected at an intermediate focusing point 292 and output to the EUV light utilization device 6. Note that one target 27 may be irradiated with multiple pulses contained in the pulsed laser beam 33. The multiple pulses include, for example, a pre-pulse and a main pulse.

[0026] The exhaust device 30 exhausts the gas in the third space 20c to the outside of the first inner wall 37 and the outside of the chamber 2 through the gate valve 39. This maintains the pressure in the third space 20c lower than both the pressure in the first space 20a and the pressure in the second space 20b. As a result, the gas flows from the second space 20b to the third space 20c through the first through-hole 371, and the gas flows from the first space 20a to the third space 20c through the second to fourth through-holes 372 to 374. This prevents debris of the target material generated near the plasma generation region 25 from moving from the third space 20c to the first and second spaces 20a and 20b, and prevents the debris of the target material from accumulating on optical components such as the EUV collector mirror 23 and the window 21.

[0027] The pressure in the second space 20b of the chamber 2 is, for example, around 100 Pa, and the pressure inside the chamber of the EUV light utilization device 6 is 10 Pa or less, for example, around 0.01 Pa. The differential pumping device 90 evacuates the gas inside the first differential pumping chamber 910 through the first exhaust port 61, thereby preventing the gas inside the chamber 2 from flowing into the chamber of the EUV light utilization device 6.

[0028] 2. Issues with the comparative examples FIG. 3 shows the configuration of the differential pumping device 90 shown in FIG. 1. When the pressure difference with the chamber 2 increases due to exhausting the gas inside the first differential pumping chamber 910, the gas flow GF of the gas flowing into the first differential pumping chamber 910 from the first opening 911 may become a high-speed jet. The gas flow GF gradually weakens as it approaches the second partition 92 from the first opening 911. However, when the central axis GFc of the gas flow GF is approximately coaxial with the optical path axis 252c of the reflected light 252 including EUV light, the pressure distribution on the first differential pumping chamber 910 side of the second partition 92 may have a peak near the second opening 921. In this case, the amount of gas flowing from the first differential pumping chamber 910 to the EUV light utilization device 6 via the second opening 921 increases.

[0029] If the amount of gas flowing into the EUV light utilization device 6 is large, the gas pressure inside the EUV light utilization device 6 increases, and the loss of EUV light increases due to the EUV light being absorbed by the gas inside the EUV light utilization device 6. The embodiment described below relates to reducing the amount of gas flowing from the first differential pumping chamber 910 into the EUV light utilization device 6.

[0030] 3. Differential exhaust device 90a in which the first partition 91a is arranged at an angle 3.1 Configuration FIG. 4 shows the configuration of the differential pumping device 90a according to the first embodiment. In the first embodiment, the first partition 91a is disposed non-perpendicular to the optical path axis 252c of the reflected light 252 including EUV light. Non-perpendicular means that it is inclined by 3° or more with respect to 90°. The central axis GFc of the gas flow GF flowing from the first opening 911 into the first differential pumping chamber 910 is substantially coaxial with the vertical axis 910c that is perpendicular to the first partition 91a and passes through the center of the first opening 911, and is substantially parallel to the XZ plane. As a result, the central axis GFc of the gas flow GF intersects with the second partition plate 922 instead of the second opening 921. As a result, the central axis GFc of the gas flow GF does not directly hit the second opening 921, and the peak of the pressure distribution on the first differential pumping chamber 910 side of the second partition 92 is shifted from the second opening 921, so that the amount of gas flowing into the EUV light utilization device 6 is reduced.

[0031] Fig. 5 shows the dimensions of each part of the differential pumping device 90a shown in Fig. 4. The distance between the center of the first opening 911 and the center of the second opening 921 is defined as D1. The diameter of the second opening 921 is defined as d2. In order for the central axis GFc of the gas flow GF to intersect with the second partition plate 922, it is desirable that the angle θ1 between the optical path axis 252c of the reflected light 252 and the vertical axis 910c satisfies the following formula. tanθ1>d2 / 2D1

[0032] Furthermore, when the diameter of the first opening 911 is d1 and the jet-like gas flow GF has a flow path cross section with a diameter of approximately d1, it is desirable that the angle θ1 satisfy the following formula so that the gas flow GF does not hit the second opening 921. tan θ1>(d1+d2) / 2D1

[0033] 3.2 Pressure distribution on the first differential pumping chamber 910 side of the second partition plate 922 6 and 7 show the results of a simulation of the pressure distribution on the first differential evacuation chamber 910 side of the second partition plate 922. The calculation conditions are as follows. Gas pressure in the second space 20b of the chamber 2: 100 Pa Gas pressure in the chamber of the EUV light utilization device 6: 0.01 Pa Gas pressure at first exhaust port 61: 0.1 Pa Gas inflow from first opening 911: 26 nlm Diameter d1 of the first opening 911: 20 mm Diameter d2 of the second opening 921: 10 mm Thickness of each of the first and second partition walls 91a and 92: 5mm Distance D1 between the center of the first opening 911 and the center of the second opening 921: 200 mm Note that "nlm" indicates the volume of gas flowing per minute converted to 0°C and 1 atmosphere.

[0034] 6 shows the pressure distribution when the angle θ1 is 0°, i.e., in the comparative example described above, with the minimum pressure being approximately 15 Pa and the maximum pressure being approximately 20 Pa. The second opening 921 is surrounded by areas where the pressure is 19 Pa or higher, and there is a possibility that a large amount of gas will flow from the second opening 921 due to the pressure difference with the EUV light utilization device 6. The amount of gas flowing from the second opening 921 to the EUV light utilization device 6 was calculated to be 0.186 nlm.

[0035] 7 shows the pressure distribution when the angle θ1 is 10° in the first embodiment, with the minimum pressure being approximately 14 Pa and the maximum pressure being approximately 19 Pa. The pressure around the second opening 921 is approximately 15 Pa, and the pressure difference with the EUV light utilization device 6 is lower than the pressure around the second opening 921 in the comparative example. The amount of gas that flows from the second opening 921 to the EUV light utilization device 6 was calculated to be 0.132 nlm, which was 30% less than the amount of gas that flows in the comparative example.

[0036] 7, it is desirable that the second opening 921 is surrounded by a portion outside the first high pressure region having the highest pressure in the pressure distribution on the first differential pumping chamber 910 side of the second partition plate 922. The first high pressure region having the highest pressure refers to a region having a pressure of 90% or more of the peak pressure. For example, if the peak pressure value is 20 Pa, it is desirable that the second opening 921 is surrounded by a portion outside the region having a pressure of 18 Pa or more.

[0037] It is also desirable that the second opening 921 is surrounded by a portion on the lower pressure side of the median isobar in the pressure distribution. For example, if the median in the pressure distribution is 16.5 Pa, it is desirable that the second opening 921 is surrounded by a portion below 16.5 Pa.

[0038] Furthermore, it is desirable that the second opening 921 is located outside the longest isobar line among the closed isobar lines surrounding the first high pressure region in the pressure distribution. The closed isobar lines are isobar lines that go around the surface of the second partition plate 922, and isobar lines that reach the outer edge of the second partition plate 922 are not closed isobar lines. In the pressure distribution shown in FIG. 7, the longest isobar line among the closed isobar lines is the isobar line of 19 Pa, and it is desirable that the second opening 921 is located outside the isobar line of 19 Pa. In the pressure distribution shown in FIG. 6, the longest isobar line among the closed isobar lines is the isobar line of 16 Pa, and the second opening 921 is located inside the isobar line of 16 Pa. However, if the direction of the gas flow GF changes and the position of the isobar line of 16 Pa shifts, it is desirable that the second opening 921 is located outside the isobar line of 16 Pa.

[0039] 3.3 Position of the first exhaust port 61 8 shows the position of the first exhaust port 61 in the differential exhaust device 90a shown in FIG. 4. FIG. 8 shows the differential exhaust device 90a as viewed in the Z direction. A plane including both the optical path axis 252c of the reflected light 252 passing through the centers of the first and second openings 911 and 921 in the Z direction and the vertical axis 910c perpendicular to the first partition wall 91a and passing through the center of the first opening 911 is defined as a second plane P2. The vertical axis 910c approximately coincides with the central axis GFc of the gas flow GF. A plane including the optical path axis 252c and perpendicular to the second plane P2 is defined as a first plane P1.

[0040] The first exhaust port 61 is located on the side where the vertical axis 910c and the second partition 92 intersect from the first plane P1, that is, in the space downstream of the gas flow GF. More preferably, the first exhaust port 61 is located on the side where the vertical axis 910c and the second partition 92 intersect from the first plane P1, that is, downstream of the gas flow GF, within a range of ±45° around the optical path axis 252c from the second plane P2. There is a possibility that the gas flow GF is bent in a direction approaching the first exhaust port 61 by the exhaust pump 31 sucking gas near the first exhaust port 61. By matching the direction in which the gas flow GF is bent by the exhaust pump 31 with the direction in which the gas flow GF is tilted by the inclination of the first partition 91a, the possibility that the gas flow GF hits the second opening 921 is further reduced.

[0041] 4 again, it is desirable that the distance between the first partition wall 91a and the first exhaust port 61 is greater than the distance between the second partition wall 92 and the first exhaust port 61. By arranging the first exhaust port 61 so that the distance between the first exhaust port 61 and the second partition wall 92 is closer than the distance between the first exhaust port 61 and the first partition wall 91a, gas that has reached the vicinity of the second partition wall 92 can be efficiently exhausted from the first exhaust port 61.

[0042] 3.4 Effect (1) According to the first embodiment, the differential pumping device 90a includes a connecting pipe 29, a first partition 91a, a second partition 92, and a first exhaust port 61. The connecting pipe 29 connects the chamber 2 that outputs the EUV light to a chamber of the EUV light utilization device 6 to which the EUV light is input and has a lower pressure than the chamber 2. The first partition 91a includes a first opening 911 and a first partition plate 912 that surrounds the first opening 911, and is disposed in the connecting pipe 29 so that the EUV light passes through the first opening 911. The second partition 92 includes a second opening 921 that is smaller than the first opening 911 and a second partition plate 922 that surrounds the second opening 921, and is disposed in the connecting pipe 29 so that the EUV light that has passed through the first opening 911 passes through the second opening 921. The first exhaust port 61 exhausts gas from the first differential pumping chamber 910 between the first partition wall 91a and the second partition wall 92. The first partition wall 91a is disposed such that the second opening 921 is surrounded by a portion outside a first high pressure region that has the highest pressure in the pressure distribution on the first differential pumping chamber 910 side of the second partition plate 922.

[0043] According to this, the second opening 921 is surrounded by the portion outside the first high pressure region, so that the inflow of gas into the chamber of the EUV light utilization device 6 is suppressed, and loss due to absorption of EUV light in the EUV light utilization device 6 is suppressed.

[0044] (2) According to the first embodiment, the second opening 921 is surrounded by a portion of the second partition plate 922 on the lower pressure side of the median isobar in the pressure distribution on the first differential evacuation chamber 910 side.

[0045] According to this, the pressure around the second opening 921 becomes lower than the median value, and the inflow of gas into the chamber of the EUV light utilization apparatus 6 is suppressed.

[0046] (3) According to the first embodiment, the second opening 921 is located outside the longest isobar among the closed isobars in the pressure distribution on the first differential evacuation chamber 910 side of the second partition plate 922.

[0047] According to this, since the second opening 921 is located outside the longest isobar among the closed isobars, the pressure around the second opening 921 is less affected by the jet-like gas flow GF, and the inflow of gas into the chamber of the EUV light utilization device 6 is suppressed.

[0048] (4) According to the first embodiment, the central axis GFc of the gas flow GF flowing from the first opening 911 into the first differential pumping chamber 910 intersects with the second partition plate 922 .

[0049] This prevents the center of the gas flow GF from hitting the second opening 921, and suppresses the inflow of gas into the chamber of the EUV light utilization device 6.

[0050] (5) According to the first embodiment, the first exhaust port 61 is located in the space downstream of the gas flow GF relative to a first plane P1 that includes the optical path axis 252c of the EUV light passing through the first opening 911 and is perpendicular to a second plane P2 that includes the central axis GFc of the gas flow GF flowing from the first opening 911 into the first differential exhaust chamber 910 and the optical path axis 252c.

[0051] According to this, by matching the inclination direction of the gas flow GF with the direction in which the gas flow GF is bent by the negative pressure caused by exhaust through the first exhaust port 61, the possibility that the pressure around the second opening 921 will become high due to the influence of the gas flow GF is reduced.

[0052] (6) According to the first embodiment, the distance between the first partition wall 91 a and the first exhaust port 61 is greater than the distance between the second partition wall 92 and the first exhaust port 61 .

[0053] According to this, the gas that reaches the vicinity of the second partition wall 92 can be efficiently exhausted from the first exhaust port 61 .

[0054] (7) According to the first embodiment, the optical path axis 252c of the EUV light passing through the first opening 911 is not perpendicular to the first partition 91a.

[0055] According to this, by tilting the first partition 91a, the gas flow GF can be tilted with respect to the optical path axis 252c, and the inflow of gas into the chamber of the EUV light utilization device 6 is suppressed.

[0056] (8) According to the first embodiment, when the distance between the center of the first opening 911 and the center of the second opening 921 is D1 and the diameter of the second opening 921 is d2, the angle θ1 between the optical path axis 252c and the vertical axis 910c perpendicular to the first partition 91a satisfies the following formula. tanθ1>d2 / 2D1

[0057] According to this, the central axis GFc of the gas flow GF can be inclined so as to be shifted from the second opening 921.

[0058] (9) According to the first embodiment, when the distance between the center of the first opening 911 and the center of the second opening 921 is D1, the diameter of the first opening 911 is d1, and the diameter of the second opening 921 is d2, the angle θ1 between the optical path axis 252c and the vertical axis 910c perpendicular to the first partition 91a satisfies the following formula. tan θ1>(d1+d2) / 2D1

[0059] According to this, the entire width of the flow path of the gas flow GF can be inclined so as to be shifted from the second opening 921.

[0060] (10) According to the first embodiment, the first exhaust port 61 is located in the space on the side where the vertical axis 910c intersects with the second partition 92, rather than the first plane P1 which is perpendicular to the first partition 91a and is a first plane P1 including the optical path axis 252c, the vertical axis 910c being an axis perpendicular to the first partition 91a and passing through the center of the first opening 911, and the second plane P2 which includes the optical path axis 252c.

[0061] With this, the pressure around the second opening 921 can be reduced by making the inclination direction of the vertical axis 910c perpendicular to the first partition 91a correspond to the direction in which the gas flow GF is bent by the negative pressure caused by exhaust through the first exhaust port 61.

[0062] In other respects, the first embodiment is similar to the comparative example.

[0063] 4. Differential pumping devices 90b and 90c in which the first opening 911 is formed at an angle 4.1 Configuration FIG. 9 shows the configuration of a differential exhaust device 90b according to the second embodiment. The first opening 911 has first and second positions different in the thickness direction of the first partition wall 91b, and the center of the first opening 911 at the first position is C1, and the center of the first opening 911 at the second position is C2. An axis passing through the centers C1 and C2 is the opening central axis 911c. In the second embodiment, the direction of the opening central axis 911c is different from the direction of the optical path axis 252c of the reflected light 252. The different direction means that it is inclined by 3° or more. The central axis GFc of the gas flow GF flowing from the first opening 911 into the first differential exhaust chamber 910 is approximately coaxial with the opening central axis 911c and is approximately parallel to the XZ plane. As a result, the central axis GFc of the gas flow GF intersects with the second partition plate 922 instead of the second opening 921.

[0064] The thickness of the first partition plate 912 may be thicker than the thickness of the second partition plate 922. The thickness of the first partition plate 912 is desirably 5 mm or more. The thickness of the first partition plate 912 may be, for example, 5 mm or 10 mm.

[0065] Fig. 10 shows the dimensions of each part of the differential pumping device 90b shown in Fig. 9. The center of the first opening 911 when defining the distance D1 between the center of the first opening 911 and the center of the second opening 921 refers to the center of the first opening 911 at the central position in the thickness direction of the first partition wall 91b. It is desirable that the angle θ2 between the optical path axis 252c of the reflected light 252 and the opening central axis 911c satisfy the following formula. tanθ2>d2 / 2D1

[0066] Furthermore, it is desirable that the angle θ2 satisfy the following formula. tan θ2>(d1+d2) / 2D1

[0067] The amount of gas flowing from the second opening 921 to the EUV light utilization device 6 in the second embodiment was calculated in the same manner as in the first embodiment, with the angle θ2 set to 10°. As a result, the amount of gas flowing in when the thickness of the first partition 91b was set to 10 mm was 0.116 nlm, which was 38% less than the amount of gas flowing in the comparative example. The amount of gas flowing in when the thickness of the first partition 91b was set to 5 mm was 0.146 nlm, which was 22% less than the amount of gas flowing in the comparative example.

[0068] 4.2 Position of the first exhaust port 61 Fig. 11 shows the position of the first exhaust port 61 in the differential exhaust device 90b shown in Fig. 9. Fig. 11 is a view of the differential exhaust device 90b as viewed in the Z direction. A plane that includes both the optical path axis 252c and the opening central axis 911c is defined as a second plane P2. A plane that includes the optical path axis 252c and is perpendicular to the second plane P2 is defined as a first plane P1.

[0069] The first exhaust port 61 is located on the side where the opening central axis 911c and the second partition wall 92 intersect with respect to the first plane P1, i.e., in the space downstream of the gas flow GF. More preferably, the first exhaust port 61 is located on the side where the opening central axis 911c and the second partition wall 92 intersect with respect to the first plane P1, i.e., downstream of the gas flow GF, within a range of ±45° around the optical path axis 252c from the second plane P2.

[0070] 4.3 Variations Fig. 12 shows the configuration of a differential pumping apparatus 90c according to a modification of the second embodiment. The difference is that the first partition plate 912 has a large and uniform overall thickness in Fig. 9, whereas the first partition plate 912 has a large thickness only in a portion thereof in Fig. 12. The thickness of the first partition plate 912 may be large at least in the region surrounding the first opening 911.

[0071] 4.4 Effect (11) According to the second embodiment, the direction of the optical path axis 252c of the EUV light passing through the first opening 911 is different from the direction of the opening center axis 911c, which is an axis passing through the centers C1, C2 of the first opening 911 at each position in the thickness direction of the first partition 91b.

[0072] According to this, by forming the first opening 911 at an angle, the gas flow GF can be inclined with respect to the optical path axis 252c, and the inflow of gas into the chamber of the EUV light utilization device 6 is suppressed.

[0073] (12) According to the second embodiment, when the distance between the center of the first aperture 911 and the center of the second aperture 921 is D1 and the diameter of the second aperture 921 is d2, the angle θ2 between the optical path axis 252c and the aperture central axis 911c satisfies the following formula. tanθ2>d2 / 2D1

[0074] According to this, the central axis GFc of the gas flow GF can be inclined so as to be shifted from the second opening 921.

[0075] (13) According to the second embodiment, when the distance between the center of the first aperture 911 and the center of the second aperture 921 is D1, the diameter of the first aperture 911 is d1, and the diameter of the second aperture 921 is d2, the angle θ2 between the optical path axis 252c and the aperture central axis 911c satisfies the following formula. tan θ2>(d1+d2) / 2D1

[0076] According to this, the entire width of the flow path of the gas flow GF can be inclined so as to be shifted from the second opening 921.

[0077] (14) According to the second embodiment, the thickness of the first partition plate 912 around the first opening 911 is 5 mm or more.

[0078] According to this, since the length of the first opening 911 in the thickness direction of the first partition plate 912 is 5 mm or more, the gas flow GF can be inclined by the first opening 911 formed at an angle.

[0079] (15) According to the second embodiment, the first exhaust port 61 is located in the space on the side where the opening center axis 911c and the second partition 92 intersect, rather than the first plane P1 that includes the optical path axis 252c and is perpendicular to the second plane P2 that includes the opening center axis 911c and the optical path axis 252c.

[0080] With this, by making the inclination direction of the opening central axis 911c of the first opening 911 correspond to the direction in which the gas flow GF is bent by the negative pressure caused by exhaust through the first exhaust port 61, the pressure around the second opening 921 can be reduced.

[0081] In other respects, the second embodiment is similar to the first embodiment.

[0082] 5. Differential pumping devices 90d and 90e in which the thickness of the first partition plate 912 is partially different 5.1 Configuration FIG. 13 shows the configuration of a differential pumping device 90d according to the third embodiment. FIG. 14 is a perspective view of the first partition wall 91d shown in FIG. 13. In the third embodiment, a first partition plate 912 constituting the first partition wall 91d includes a first portion 912a having a first thickness and contacting the space in the first opening 911, and a second portion 912b having a second thickness larger than the first thickness and contacting the above-mentioned space. For example, the first partition plate 912 is divided into halves with a diameter parallel to the Y direction, one of which is the first portion 912a, and the other is the second portion 912b. The step between the first portion 912a and the second portion 912b is located on the first differential pumping chamber 910 side.

[0083] Gas flowing into the first differential pumping chamber 910 from the first opening 911 is restrained from flowing in the X direction where the second portion 912b is located, and is likely to flow in the -X direction where the first portion 912a is located. As a result, the central axis GFc of the gas flow GF, which is approximately parallel to the XZ plane, is inclined with respect to the first partition wall 91d and intersects with the second partition plate 922 instead of the second opening 921. The difference between the first thickness and the second thickness is 5 mm or more and 30 mm or less.

[0084] The amount of gas flowing from the second opening 921 to the EUV light utilization device 6 in the third embodiment was calculated in the same manner as in the first embodiment. As a result, when the first and second thicknesses were 5 mm and 35 mm, respectively, the amount of gas flowing was 0.104 nlm, which was 44% less than the amount of gas flowing in the comparative example. When the first and second thicknesses were 5 mm and 10 mm, respectively, the amount of gas flowing in was 0.115 nlm, which was 38% less than the amount of gas flowing in the comparative example.

[0085] 5.2 Variations Fig. 15 shows the configuration of a differential exhaust device 90e according to a modified example of the third embodiment. Fig. 16 is a perspective view of the first partition wall 91e shown in Fig. 15. Figs. 13 and 14 show a case in which the entire semicircular portion obtained by dividing the first partition plate 912 in half along a diameter parallel to the Y direction is used as the second portion 912b, but as shown in Figs. 15 and 16, the second portion 912b may have an eave-like shape arranged only near the first opening 911.

[0086] 5.3 Effect (16) According to the third embodiment, the first partition plate 912 includes a first portion 912a having a first thickness and contacting the space within the first opening 911, and a second portion 912b having a second thickness greater than the first thickness and contacting the above-mentioned space.

[0087] According to this, by making the thicknesses of the first portion 912a and the second portion 912b in contact with the first opening 911 different, the gas flow GF can be inclined toward the first portion 912a having the smaller thickness, thereby suppressing the inflow of gas into the chamber of the EUV light utilization device 6.

[0088] (17) According to the third embodiment, the difference between the first thickness and the second thickness is not less than 5 mm and not more than 30 mm.

[0089] According to this, by making the difference between the first thickness and the second thickness 5 mm or more, the gas flow GF can be inclined, and by making it 30 mm or less, sufficient space can be secured within the first differential exhaust chamber 910.

[0090] In other respects, the third embodiment is similar to the first and second embodiments.

[0091] 6. Differential pumping apparatus 90f including multiple differential pumping chambers 910, 920, and 930 6.1 Configuration 17 shows the configuration of a differential pumping device 90f according to a fourth embodiment. The differential pumping device 90f includes a third partition 93 in addition to first and second partitions 91a and 92. The differential pumping device 90f may further include a fourth partition 94.

[0092] The third and fourth partitions 93 and 94 are disposed in the connecting pipe 29. The third partition 93 includes a third opening 931 larger than the first opening 911, and a third partition plate 932 surrounding the third opening 931. The fourth partition 94 includes a fourth opening 941 larger than the third opening 931, and a fourth partition plate 942 surrounding the fourth opening 941. The third and fourth partitions 93 and 94 are disposed such that the reflected light 252 including EUV light that has passed through the fourth opening 941 passes through the third opening 931 and the first opening 911 in sequence.

[0093] A second exhaust port 62 is arranged in the second differential exhaust chamber 920 between the first and third partition walls 91a and 93, and a third exhaust port 63 is arranged in the third differential exhaust chamber 930 between the third and fourth partition walls 93 and 94. The second and third exhaust ports 62 and 63 are connected to exhaust pumps (not shown), respectively.

[0094] 17, the gas flow GF flowing into the second differential pumping chamber 920 from the third opening 931 and its central axis GFc are omitted, and instead, a vertical axis 930c perpendicular to the third partition wall 93 and passing through the center of the third opening 931 is shown. Also, the gas flow GF flowing into the third differential pumping chamber 930 from the fourth opening 941 and its central axis GFc are omitted, and instead, a vertical axis 940c perpendicular to the fourth partition wall 94 and passing through the center of the fourth opening 941 is shown.

[0095] The third and fourth partition walls 93 and 94 are disposed non-perpendicular to the optical path axis 252c of the reflected light 252. The perpendicular axis 930c intersects with the first partition plate 912 instead of the first opening 911. As a result, it is desirable that the first opening 911 is surrounded by a portion outside the second high pressure region having the highest pressure in the pressure distribution on the second differential pumping chamber 920 side of the first partition plate 912. Similarly, the perpendicular axis 940c intersects with the third partition plate 932 instead of the third opening 931. With these configurations, the amount of gas flowing into the EUV light utilization device 6 is reduced.

[0096] It is assumed that the first partition 91a and the third partition 93 are arranged in parallel and the distance between the first partition 91a and the third partition 93 is D2. It is desirable that the angle θ3 between the optical path axis 252c of the reflected light 252 and a vertical axis 930c perpendicular to the third partition 93 satisfies the following formula. tan θ3>d1 / 2D2

[0097] Furthermore, when the diameter of the third opening 931 is d3 and the jet-like gas flow GF flowing into the second differential exhaust chamber 920 has a flow path cross section with a diameter of approximately d3, it is desirable that the angle θ3 satisfy the following formula. tan θ3>(d1+d3) / 2D2

[0098] The third partition 93 and the fourth partition 94 are arranged in parallel, and the distance between the third partition 93 and the fourth partition 94 is D3. It is desirable that the angle θ4 between the optical path axis 252c of the reflected light 252 and a vertical axis 940c perpendicular to the fourth partition 94 satisfies the following formula. tan θ4>d3 / 2D3

[0099] Furthermore, when the diameter of the fourth opening 941 is d4 and the jet-like gas flow GF flowing into the third differential exhaust chamber 930 has a flow path cross section with a diameter of approximately d4, it is desirable that the angle θ4 satisfy the following formula. tan θ4>(d3+d4) / 2D3

[0100] As with the first partition wall 91a in the first embodiment, the third and fourth partition walls 93 and 94 are obliquely arranged, but the present disclosure is not limited thereto. As with the first partition wall 91b in the second embodiment or the first partition wall 91c in its modified example, at least one of the third and fourth partition walls 93 and 94 may have an opening formed obliquely. As with the first partition wall 91d in the third embodiment or the first partition wall 91e in its modified example, at least one of the third and fourth partition walls 93 and 94 may have a plurality of portions that contact the space in the same opening and have different thicknesses.

[0101] 6.2 Location of second and third exhaust ports 62 and 63 A plane including both the optical path axis 252c of the reflected light 252 and a vertical axis 930c that is perpendicular to the third partition 93 and passes through the center of the third opening 931 is defined as a third plane (not shown). A plane that includes the optical path axis 252c and is perpendicular to the third plane is defined as a fourth plane P4.

[0102] The second exhaust port 62 is located on the side where the vertical axis 930c and the first partition wall 91a intersect with respect to the fourth plane P4, i.e., in the space downstream of the gas flow GF. More preferably, the second exhaust port 62 is located on the side where the vertical axis 930c and the first partition wall 91a intersect with respect to the fourth plane P4, i.e., downstream of the gas flow GF, within a range of ±45° around the optical path axis 252c from the third plane.

[0103] It is desirable that the distance between the third partition wall 93 and the second exhaust port 62 be greater than the distance between the first partition wall 91 a and the second exhaust port 62 .

[0104] A plane including both the optical path axis 252c of the reflected light 252 and a vertical axis 940c that is perpendicular to the fourth partition 94 and passes through the center of the fourth opening 941 is defined as a fifth plane (not shown). A plane that includes the optical path axis 252c and is perpendicular to the fifth plane is defined as a sixth plane P6.

[0105] The third exhaust port 63 is located on the side where the vertical axis 940c and the third partition wall 93 intersect with respect to the sixth plane P6, i.e., in the space downstream of the gas flow GF. More preferably, the third exhaust port 63 is located on the side where the vertical axis 940c and the third partition wall 93 intersect with respect to the sixth plane P6, i.e., downstream of the gas flow GF, within a range of ±45° around the optical path axis 252c from the fifth plane.

[0106] It is desirable that the distance between the fourth partition wall 94 and the third exhaust port 63 be greater than the distance between the third partition wall 93 and the third exhaust port 63 .

[0107] 6.3 Effect (18) According to the fourth embodiment, the differential pumping device 90f further includes a third partition 93 and a second exhaust port 62. The third partition 93 includes a third opening 931 larger than the first opening 911 and a third partition plate 932 surrounding the third opening 931, and is disposed in the connecting pipe 29 so that the EUV light passing through the third opening 931 passes through the first opening 911. The second exhaust port 62 exhausts gas in the second differential pumping chamber 920 between the third partition 93 and the first partition wall 91a. The third partition 93 is disposed so that the first opening 911 is surrounded by a portion outside a second high pressure region having the highest pressure in the pressure distribution on the second differential pumping chamber 920 side of the first partition plate 912.

[0108] According to this, since the inflow of gas into the next stage can be suppressed in each of the two or more stages of differential pumping, the inflow of gas into the chamber of the EUV light utilization device 6 can be sufficiently suppressed.

[0109] In other respects, the fourth embodiment is similar to the first to third embodiments.

[0110] 7.Other 7.1 Example of EUV light utilization device6 FIG. 18 shows a schematic configuration of an exposure apparatus 6a connected to an EUV light generation system 11. In FIG. 18, the exposure apparatus 6a as an EUV light utilization apparatus 6 (see FIG. 1) includes a mask irradiation unit 608 and a workpiece irradiation unit 609. The mask irradiation unit 608 illuminates a mask pattern on a mask table MT via a reflection optical system with EUV light incident from the EUV light generation system 11. The workpiece irradiation unit 609 forms an image of the EUV light reflected by the mask table MT on a workpiece (not shown) placed on a workpiece table WT via a reflection optical system. The workpiece is a photosensitive substrate such as a semiconductor wafer coated with a photoresist. The exposure apparatus 6a exposes the workpiece to EUV light reflecting the mask pattern by synchronously moving the mask table MT and the workpiece table WT in parallel. An electronic device can be manufactured by transferring a device pattern to a semiconductor wafer by the above-mentioned exposure process.

[0111] FIG. 19 is a schematic diagram showing the configuration of an inspection apparatus 6b connected to the EUV light generation system 11. In FIG. 19, the inspection apparatus 6b as the EUV light utilization apparatus 6 (see FIG. 1) includes an illumination optical system 603 and a detection optical system 606. The illumination optical system 603 reflects the EUV light incident from the EUV light generation system 11 and irradiates a mask 605 arranged on a mask stage 604. The mask 605 here includes a mask blank before a pattern is formed. The detection optical system 606 reflects the EUV light from the illuminated mask 605 and forms an image on the light receiving surface of a detector 607. The detector 607 that receives the EUV light acquires an image of the mask 605. The detector 607 is, for example, a TDI (time delay integration) camera. The image of the mask 605 acquired by the above-mentioned process is used to inspect the mask 605 for defects, and a mask suitable for manufacturing electronic devices is selected using the inspection result. Then, the pattern formed on the selected mask is exposed and transferred onto a photosensitive substrate using the exposure apparatus 6a, thereby manufacturing an electronic device.

[0112] 7.2 Supplementary Information The above description is intended to be illustrative rather than restrictive. Thus, it will be apparent to one skilled in the art that modifications may be made to the disclosed embodiments without departing from the scope of the claims. It will also be apparent to one skilled in the art that the disclosed embodiments may be used in combination.

[0113] Terms used throughout this specification and claims should be construed as "open ended" terms unless otherwise specified. For example, terms such as "include," "have," "comprise," and "include" should be construed as "not excluding the presence of elements other than those listed." In addition, the modifier "a" should be construed as meaning "at least one" or "one or more." In addition, the term "at least one of A, B, and C" should be construed as "A," "B," "C," "A+B," "A+C," "B+C," or "A+B+C," and should also be construed as including combinations other than "A," "B," and "C."

Claims

1. a connecting pipe connecting a first chamber that outputs extreme ultraviolet light and a second chamber to which the extreme ultraviolet light is input, the second chamber having a lower pressure than the first chamber; a first partition wall including a first opening and a first partition plate surrounding the first opening, the first partition wall being disposed in the connecting pipe such that the extreme ultraviolet light passes through the first opening; a second partition wall including a second opening smaller than the first opening and a second partition plate surrounding the second opening, the second partition wall being disposed in the connecting pipe such that the extreme ultraviolet light passing through the first opening passes through the second opening; a first exhaust port for exhausting gas from a first differential exhaust chamber between the first partition and the second partition; Equipped with a first partition wall disposed so that the second opening is surrounded by a portion outside a first high pressure region having the highest pressure in a pressure distribution on the first differential pumping chamber side of the second partition plate.

2. 2. The differential pumping apparatus according to claim 1, a differential pumping apparatus, wherein the second opening is surrounded by a portion of the second partition plate on the lower pressure side of a median isobar in a pressure distribution on the first differential pumping chamber side.

3. 2. The differential pumping apparatus according to claim 1, a differential pumping apparatus, wherein the second opening is located outside a longest isobar among closed isobars in a pressure distribution on the first differential pumping chamber side of the second partition plate;

4. 2. The differential pumping apparatus according to claim 1, a central axis of a gas flow flowing from the first opening into the first differential pumping chamber intersects with the second partition plate.

5. 2. The differential pumping apparatus according to claim 1, the first exhaust port is located in a space downstream of the gas flow relative to a first plane that includes an optical path axis of the extreme ultraviolet light passing through the first opening and is perpendicular to a second plane that includes a central axis of a gas flow flowing from the first opening into the first differential exhaust chamber and the optical path axis; Differential exhaust system.

6. 2. The differential pumping apparatus according to claim 1, a distance between the first partition and the first exhaust port is greater than a distance between the second partition and the first exhaust port.

7. 2. The differential pumping apparatus according to claim 1, a differential pumping apparatus, wherein an optical path axis of the extreme ultraviolet light passing through the first opening is non-perpendicular to the first partition wall;

8. 8. The differential pumping apparatus according to claim 7, The distance between the center of the first opening and the center of the second opening is D １ and the diameter of the second opening is d ２ When the above-mentioned optical path axis and a vertical axis perpendicular to the first partition wall are arranged as an angle θ １ A differential pumping device that satisfies the following formula: tanθ １ >d ２ / 2D １

9. 8. The differential pumping apparatus according to claim 7, The distance between the center of the first opening and the center of the second opening is D １ and the diameter of the first opening is d １ and the diameter of the second opening is d ２ When the above-mentioned optical path axis and a vertical axis perpendicular to the first partition wall are arranged as an angle θ １ A differential pumping device that satisfies the following formula: tanθ １ >(d １ +d ２ ) / 2D １

10. 8. The differential pumping apparatus according to claim 7, the first exhaust port is located in a space on a side where a vertical axis, which is an axis that is a first plane including the optical path axis and is perpendicular to the first partition and passes through a center of the first opening, and the vertical axis intersects with the second partition, relative to the first plane perpendicular to a second plane including the optical path axis, and the vertical axis being an axis that is perpendicular to the first partition and passes through a center of the first opening. Differential exhaust system.

11. 2. The differential pumping apparatus according to claim 1, a direction of an optical path axis of the extreme ultraviolet light passing through the first opening differs from a direction of an opening central axis that passes through the center of the first opening at each position in a thickness direction of the first partition.

12. 12. The differential pumping apparatus according to claim 11, The distance between the center of the first opening and the center of the second opening is D １ and the diameter of the second opening is d ２ When the angle θ between the optical path axis and the central axis of the aperture is ２ A differential pumping device that satisfies the following formula: tanθ ２ >d ２ / 2D １

13. 12. The differential pumping apparatus according to claim 11, The distance between the center of the first opening and the center of the second opening is D １ and the diameter of the first opening is d １ and the diameter of the second opening is d ２ When the angle θ between the optical path axis and the central axis of the aperture is ２ A differential pumping device that satisfies the following formula: tanθ ２ >(d １ +d ２ ) / 2D １

14. 12. The differential pumping apparatus according to claim 11, A differential pumping device, wherein the thickness of the first partition plate around the first opening is 5 mm or more.

15. 12. The differential pumping apparatus according to claim 11, the first exhaust port is located in a space on a side where the opening central axis and the second partition intersect, relative to a first surface that includes the optical path axis and is perpendicular to a second surface that includes the opening central axis and the optical path axis. Differential exhaust system.

16. 2. The differential pumping apparatus according to claim 1, the first partition plate includes a first portion having a first thickness and in contact with a space in the first opening, and a second portion having a second thickness greater than the first thickness and in contact with the space.

17. 17. The differential pumping apparatus according to claim 16, A differential pumping device, wherein a difference between the first thickness and the second thickness is 5 mm or more and 30 mm or less.

18. 2. The differential pumping apparatus according to claim 1, a third partition wall including a third opening larger than the first opening and a third partition plate surrounding the third opening, the third partition wall being disposed in the connecting pipe such that the extreme ultraviolet light passing through the third opening passes through the first opening; a second exhaust port for exhausting gas from a second differential exhaust chamber between the third partition and the first partition; Further equipped with a third partition wall disposed so that the first opening is surrounded by a portion outside a second high pressure region having the highest pressure in a pressure distribution on the second differential pumping chamber side of the first partition plate.

19. 1. A method for manufacturing an electronic device, comprising: a connecting pipe connecting a first chamber that outputs extreme ultraviolet light and a second chamber to which the extreme ultraviolet light is input, the second chamber having a lower pressure than the first chamber; a first partition wall including a first opening and a first partition plate surrounding the first opening, the first partition wall being disposed in the connecting pipe such that the extreme ultraviolet light passes through the first opening; a second partition wall including a second opening smaller than the first opening and a second partition plate surrounding the second opening, the second partition wall being disposed in the connecting pipe such that the extreme ultraviolet light passing through the first opening passes through the second opening; a first exhaust port for exhausting gas from a first differential exhaust chamber between the first partition and the second partition; Equipped with a differential pumping device, wherein the first partition is disposed so that the second opening is surrounded by a portion outside a first high pressure region having the highest pressure in a pressure distribution on the first differential pumping chamber side of the second partition plate; the first chamber; The extreme ultraviolet light is generated by an extreme ultraviolet light generating system comprising: outputting the extreme ultraviolet light to an exposure apparatus including the second chamber; Exposing a photosensitive substrate to the extreme ultraviolet light in the exposure apparatus to manufacture an electronic device. A method for manufacturing an electronic device, comprising:

20. 1. A method for manufacturing an electronic device, comprising: a connecting pipe connecting a first chamber that outputs extreme ultraviolet light and a second chamber to which the extreme ultraviolet light is input, the second chamber having a lower pressure than the first chamber; a first partition wall including a first opening and a first partition plate surrounding the first opening, the first partition wall being disposed in the connecting pipe such that the extreme ultraviolet light passes through the first opening; a second partition wall including a second opening smaller than the first opening and a second partition plate surrounding the second opening, the second partition wall being disposed in the connecting pipe such that the extreme ultraviolet light passing through the first opening passes through the second opening; a first exhaust port for exhausting gas from a first differential exhaust chamber between the first partition and the second partition; Equipped with a differential pumping device, wherein the first partition is disposed so that the second opening is surrounded by a portion outside a first high pressure region having the highest pressure in a pressure distribution on the first differential pumping chamber side of the second partition plate; the first chamber; irradiating a mask with the extreme ultraviolet light generated by an extreme ultraviolet light generating system comprising: selecting a mask using the results of said testing; The pattern formed on the selected mask is transferred onto a photosensitive substrate by exposure. A method for manufacturing an electronic device, comprising:

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