Substrate processing apparatus

Abstract

To provide a substrate processing apparatus capable of suppressing a pressure fluctuation in a processing chamber for processing a substrate.SOLUTION: A substrate processing apparatus 10 of an embodiment includes: a processing chamber 20 in which an opening 23a is formed in an upper part, and which is for processing a substrate W conveyed; a gas supply part 70 that supplies a gas into the processing chamber 20 via the opening 23a; a rotational table 40 that holds the substrate W in the processing chamber 20; a rotational driving part 50 that rotates the rotational table 40, and rotates the substrate W held by the rotational table 40; and a control device 80 that controls the gas supply part 70. The gas supply part 70 comprises: a fan 72 that supplies the gas into the processing chamber 20; a pipe 71 in which the gas supplied by the fan 72 is circulated; and an opening adjustment part 74 that adjusts an open ratio of the pipe 71. The control device 80 reduces the open ratio of the pipe 71 by controlling the opening adjustment part 74 in at least part of a period when positive or negative acceleration speed occurs in a rotational speed of the fan 72.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] An embodiment of the present invention relates to a substrate processing apparatus. [Background technology]

[0002] In the manufacturing process of semiconductor devices and liquid crystal display devices, there is a process of forming a circuit pattern on a substrate such as a semiconductor wafer or a glass substrate. In such a process, pattern formation and cleaning treatment are repeatedly performed on the substrate. In order to clean the substrate and dry the cleaned substrate, a spin processing apparatus is used in which the substrate is held on a rotating table and rotated together with the rotating table.

[0003] Generally, a spin processing apparatus has a processing chamber in which a cup body and a rotating table are provided. The cup body is a container-like body with an open top, and a rotating table for holding a substrate is disposed inside the cup body.

[0004] The outside air from the clean room is introduced into the processing chamber through a filter by an air supply fan installed at the top, and the outside air introduced into the processing chamber is exhausted from an exhaust pipe connected to the bottom. This creates an air current from the top to the bottom in the processing chamber. This air current prevents the processing liquid scattered from the substrate from floating in the processing chamber and re-adhering to the substrate.

[0005] Here, the pressure inside the processing chamber is controlled to be a negative pressure relative to the pressure outside the processing chamber. This is to prevent the atmosphere containing the chemical liquid from leaking out of the processing chamber and adversely affecting the workers and the clean room environment when a chemical liquid is used to process the substrate. On the other hand, if the pressure difference between the inside and outside of the processing chamber is large, a large amount of the atmosphere outside the processing chamber is taken in, which may impair the cleanliness of the substrate. Therefore, it is preferable to control the pressure inside the processing chamber so that the pressure inside the processing chamber is slightly negative compared to the pressure outside the processing chamber. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2000-286219 A Summary of the Invention [Problem to be solved by the invention]

[0007] However, the pressure in a processing chamber may fluctuate. For example, when a turntable is rotated to process a substrate, the pressure in the processing chamber fluctuates by changing the rotation speed of the substrate held on the turntable. When the rotation speed of the substrate is increased, the pressure in the processing chamber increases. On the other hand, when the rotation speed of the substrate is decreased, the pressure in the processing chamber decreases. In order to suppress pressure fluctuations in the processing chamber caused by such factors, for example, the rotation speed of an air supply fan is changed.

[0008] However, when the rotation speed of the intake fan is changed, it takes time for the rotation speed of the intake fan to reach the set rotation speed after it starts to accelerate or decelerate, which can cause a large disturbance in the pressure inside the processing chamber until the intake fan reaches the set rotation speed, leading to leakage of the atmosphere inside the processing chamber to the outside of the processing chamber or a decrease in the cleanliness of the substrate.

[0009] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus capable of suppressing pressure fluctuations within a processing chamber in which a substrate is processed. [Means for solving the problem]

[0010] The substrate processing apparatus according to the embodiment includes a processing chamber having an opening at an upper portion thereof for processing a substrate carried therein; a gas supply unit that supplies a gas into the processing chamber through the opening; a holder for holding the substrate in the processing chamber; a rotation drive unit that rotates the holder to rotate the substrate held by the holder; A control device for controlling the gas supply unit; having The gas supply unit includes: a fan that rotates to supply gas into the processing chamber; A pipe through which the gas supplied by the fan flows; An opening adjustment unit that adjusts the opening ratio of the pipe; Equipped with The control device includes: The opening adjustment unit controls the opening ratio of the pipe during at least a portion of a period during which a positive or negative acceleration occurs in the rotation speed of the fan. Effect of the Invention

[0011] According to the embodiment of the present invention, it is possible to suppress fluctuations in pressure within a processing chamber in which a substrate is processed. [Brief description of the drawings]

[0012] [Figure 1] 1 is a diagram showing a schematic configuration of a substrate processing apparatus according to a first embodiment. [Diagram 2] 2 is a diagram showing a schematic configuration of a substrate processing apparatus at a cross-sectional position of line AA in FIG. [Diagram 3] FIG. 2 is a plan view showing an opening adjustment section according to the first embodiment. [Figure 4] 4 is a diagram showing an opening adjustment portion at a cross-sectional position of line BB in FIG. 3. [Diagram 5] 5 is a flowchart showing an operation of the substrate processing apparatus according to the first embodiment. [Figure 6] 5A to 5C are explanatory views showing the operation of the plate-shaped body of the opening adjustment section, where (a) shows the first state, (b) shows the third state, and (c) shows the second state. [Figure 7] FIG. 13 is a diagram showing a schematic configuration of a substrate processing apparatus according to a second embodiment. [Figure 8] 10 is a flowchart showing an operation of a substrate processing apparatus according to a third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] [1-1. First embodiment] A substrate processing apparatus 10 according to a first embodiment will be described with reference to FIGS.

[0014] (composition) As shown in Figures 1 and 2, the substrate processing apparatus 10 of the first embodiment has a processing chamber 20, a cup 30, a turntable 40, a rotation drive unit 50, a liquid supply unit 60, a gas supply unit 70, and a control unit 80.

[0015] The processing chamber 20 has an exterior body 21, an interior body (partition wall body) 22, a flange 23, and two exhaust paths 24. The processing chamber 20 is a processing chamber for processing a substrate W having a processing surface Wa, and accommodates a cup 30, a turntable 40, a part of a rotation drive unit 50, a liquid supply unit 60, etc. As the substrate W, for example, a semiconductor wafer or a liquid crystal substrate is used.

[0016] The exterior body 21 is box-shaped with an open top and is formed into a rectangular shape in a plan view. The exterior body 21 has four side walls 21a and a floor (bottom wall) 21b. A loading / unloading opening 21a1 (see FIG. 2) is formed in one of the side walls 21a. The loading / unloading opening 21a1 is for enabling the substrate W to be loaded into and unloaded from the processing chamber 20, and is closed by an openable / closable shutter (not shown). A discharge pipe 21b1 is connected to the floor 21b. The discharge pipe 21b1 is for discharging the processing liquid discharged from the processing surface Wa of the substrate W to the outside of the processing chamber 20.

[0017] The inner body 22 is provided inside the outer body 21. The inner body 22 has two side walls 22a and a floor (bottom wall) 22b. The side walls 22a are formed to face the pair of opposing side walls 21a of the outer body 21 over the entire length in the width direction (vertical direction in FIG. 2) at a predetermined interval. The floor 22b is formed to face the floor 21b of the outer body 21 at a predetermined interval in the vertical direction. An attachment hole 22b1 is formed in the floor 22b, and a cup 30 is provided inside the attachment hole 22b1.

[0018] In this embodiment, in the processing chamber 20, a space surrounded by a pair of opposing side wall portions 21a (two side wall portions 21a opposing each other in the vertical direction in Figure 2) of the outer body 21 and a pair of side wall portions 22a of the inner body 22 is formed as a processing space for processing the substrate W.

[0019] A rectangular frame-shaped flange 23 is provided on the upper part of the inner body 22. An opening 23a is formed on the upper surface of the inner body 22 by the flange 23. A gas supply unit 70 is provided on the upper part of the flange 23. The gas supply unit 70 supplies clean gas into the processing space of the processing chamber 20 through the opening 23a.

[0020] The two exhaust paths 24 are formed by the exterior body 21 and the interior body 22. That is, each exhaust path 24 is formed by a pair of opposing side walls 21a and floor 21b of the exterior body 21 and a pair of side walls 22a and floor 22b of the interior body 22. These exhaust paths 24 are flow paths that communicate from the lower side of the cup 30 to the inside of the cup 30 to exhaust gas within the cup 30, and extend from the lower surface of the processing chamber 20 along the side surface and connect to the upper surface. Each exhaust path 24 is connected to an exhaust duct and an exhaust fan (both not shown), and gas within the cup 30 is exhausted via each exhaust path 24 and exhaust duct by driving the exhaust fan.

[0021] The cup 30 is formed in a cylindrical shape, and in this embodiment, as shown in FIG. 2, is disposed in the approximate center of the exterior body 21, which is rectangular in plan view, and is provided so as to cover the periphery (the outer peripheral surface of the substrate W) of the substrate W held by the turntable 40. The upper part of the peripheral wall of the cup 30 is inclined toward the inside, and is opened so as to expose the processing surface Wa of the substrate W on the turntable 40. The cup 30 receives the processing liquid scattered from the processing surface Wa of the substrate W by the rotation of the turntable 40 on its inner peripheral surface. The scattered processing liquid collides with the inner peripheral surface of the cup 30 and is received, and flows down the cup 30 along the inner peripheral surface of the cup 30. Then, it is discharged from the discharge pipe 21b1.

[0022] The cup 30 described above is formed to be movable in the vertical direction in the processing chamber 20 by a pair of lifting mechanisms 31 (see FIG. 2). These lifting mechanisms 31 are provided at positions facing each other across the rotary table 40, and support and move the cup 30 in the vertical direction. As the lifting mechanisms 31, for example, a cylinder is used. The cup 30 moves in the vertical direction by the pair of lifting mechanisms 31 in response to the loading and unloading of the substrate W. When the substrate W is loaded and unloaded, the cup 30 descends and moves to a retreat position that does not interfere with the loading and unloading operation of the substrate by a robot hand (not shown). In addition, when the robot hand places the substrate W on the rotary table 40 and retreats from above the rotary table 40, the cup 30 ascends and moves to a processing position where the inner peripheral surface can receive the liquid splashed from the processing surface Wa of the substrate W on the rotary table 40. The cup 30 shown in FIG. 1 is in the processing position. The lifting mechanism 31 is electrically connected to the control device 80 , and its driving is controlled by the control device 80 .

[0023] The turntable 40 is positioned approximately in the center of the cup 30, and is mounted on the rotation drive unit 50 so as to be rotatable within a horizontal plane. The turntable 40 has a plurality of holding members 41. In this embodiment, six holding members 41 are provided, as shown in FIG. 2. Note that only two holding members 41 are shown in FIG. 1. The substrate W is held in a horizontal state by the plurality of holding members 41. At this time, the center of the processing surface Wa of the substrate W is positioned on the rotation axis of the turntable 40. The turntable 40 is an example of a holding unit.

[0024] The rotary drive unit 50 is provided to support the turntable 40 and is configured to rotate the turntable 40 in a horizontal plane. The rotary drive unit 50 has, for example, a rotary shaft connected to the center of the turntable 40 and a motor (neither of which are shown in the figures) that rotates the rotary shaft, and rotates the turntable 40 via the rotary shaft by driving the motor. The rotary drive unit 50 rotates the turntable 40, thereby rotating the substrate W held by the holding member 41 of the turntable 40. The rotary drive unit 50 is electrically connected to the control device 80, and its drive is controlled by the control device 80.

[0025] The liquid supply unit 60 has a nozzle 61 and a nozzle movement mechanism 62. The liquid supply unit 60 moves the nozzle 61 by the nozzle movement mechanism 62 to position the nozzle 61 above the turntable 40, and supplies the processing liquid from the nozzle 61 to the processing surface Wa of the substrate W on the turntable 40.

[0026] The nozzle 61 is formed so as to be swingable above the turntable 40 along the processing surface Wa of the substrate W placed on the turntable 40 by a nozzle moving mechanism 62. The nozzle 61 faces near the center of the processing surface Wa of the substrate W held on the turntable 40, and supplies a processing liquid (e.g., a chemical liquid or a rinse liquid) toward the processing surface Wa. The processing liquid is supplied to the nozzle 61 from a tank (not shown) outside the substrate processing apparatus 10.

[0027] The nozzle moving mechanism 62 has a movable arm 62a and a swinging mechanism 62b. The movable arm 62a has one end to which the nozzle 61 is attached, and the other end opposite to the nozzle 61 is connected to the swinging mechanism 62b. The movable arm 62a is supported horizontally by the swinging mechanism 62b. The swinging mechanism 62b supports the other end of the movable arm 62a opposite to the nozzle 61, and swings the movable arm 62a along the processing surface Wa of the substrate W on the turntable 40. The swinging mechanism 62b is electrically connected to the control device 80, and its drive is controlled by the control device 80.

[0028] The nozzle 61 is moved by a nozzle moving mechanism 62 between a discharge position facing the processing surface Wa of the substrate W held on the turntable 40 and a standby position where the nozzle 61 is retracted from above the turntable 40 to enable loading and unloading of the substrate W. The nozzle 61 shown in Figures 1 and 2 is at the discharge position.

[0029] The gas supply unit 70 supplies clean gas into the processing space of the processing chamber 20. The gas supply unit 70 has piping 71, a fan 72, a filter 73, and an opening adjustment unit 74. The gas supply unit 70 purifies gas in a clean room in which the substrate processing apparatus 10 is installed, and supplies the purified gas into the processing chamber 20 through the opening 23a.

[0030] The pipe 71 is formed in a rectangular cylindrical shape, and is provided at the top of the flange 23 so as to be connected to the opening 23a. The pipe 71 is a duct for supplying clean gas into the processing space of the processing chamber 20. Inside the pipe 71, a fan 72, an opening adjustment unit 74, and a filter 73 are provided in this order from the farthest side from the processing chamber 20. That is, in the direction in which the gas flows inside the pipe 71, the fan 72 is provided on the upstream side, and the filter 73 is provided on the downstream side, and the opening adjustment unit 74 is provided between the fan 72 and the filter 73.

[0031] The fan 72 supplies gas to the processing chamber 20. When the fan 72 rotates, it sends gas outside the substrate processing apparatus 10 (inside the clean room) into the processing chamber 20, generating an airflow that flows from top to bottom within the processing space of the processing chamber 20. The fan 72 has a motor (not shown), and rotates when the motor is driven. The motor of the fan 72 is electrically connected to the control device 80, and the drive of the motor is controlled.

[0032] The gas supplied by the fan 72 is purified by passing through the filter 73. The filter 73 is, for example, a HEPA filter or a ULPA filter.

[0033] The opening adjustment unit 74 adjusts the aperture ratio of the piping 71. In other words, the opening adjustment unit 74 changes the flow path cross-sectional area at the position where the opening adjustment unit 74 is provided in the piping 71. The opening adjustment unit 74 adjusts the aperture ratio of the piping 71, thereby adjusting the amount of gas supplied by the fan 72 into the processing space of the processing chamber 20 through the opening 23a.

[0034] As shown in FIG. 3 and FIG. 4, the opening adjustment unit 74 has a plate-like body 75, an arm 76, and a moving mechanism 77. The plate-like body 75 is a plate having a shape corresponding to the cross-sectional shape of the pipe 71. In this embodiment, the plate-like body 75 is rectangular. The plate-like body 75 is arranged in a direction in which its surface is along the processing surface Wa of the substrate W held on the rotating table 40. In addition, a plurality of plate-like bodies 75 are provided. In this embodiment, a first plate-like body 75a, a second plate-like body 75b, and a third plate-like body 75c are provided. The first plate-like body 75a, the second plate-like body 75b, and the third plate-like body 75c are arranged so as to be stacked with a small gap provided between them. The plate-like body 75 is supported by the arm 76 and is provided so as to be movable in the horizontal direction.

[0035] A plurality of through holes 75a1 are formed in the first plate-like body 75a. As shown in FIG. 3, the through holes 75a1 are rectangular. In FIG. 3, the through holes 75a1 are shown as 49, i.e., 7×7, but the number of the through holes 75a1 is not limited to this. The plurality of through holes 75a1 are formed, for example, arranged in a matrix. Similarly to the first plate-like body 75a, a plurality of through holes 75b1 are formed in the second plate-like body 75b. Similarly to the first plate-like body 75a and the second plate-like body 75b, a plurality of through holes 75c1 are formed in the third plate-like body 75c. As a result, as shown in FIG. 4, the first plate-like body 75a, the second plate-like body 75b, and the third plate-like body 75c are arranged so that the positions of the through holes 75a1, 75b1, and 75c1 in the horizontal direction are the same. FIG. 4 shows the arrangement of plate-like body 75 when it is in a first state, which will be described later.

[0036] The arm 76 supports the plate-like body 75. The number of arms 76 provided is the same as the number of plate-like bodies 75. In this embodiment, an arm 76a, an arm 76b, and an arm 76c are provided. A first plate-like body 75a is attached to the arm 76a. The arm 76a contacts the side surface of the first plate-like body 75a to support the first plate-like body 75a. A second plate-like body 75b is attached to the arm 76b. The arm 76b contacts the side surface of the second plate-like body 75b to support the second plate-like body 75b. A third plate-like body 75c is attached to the arm 76c. The arm 76c contacts the side surface of the third plate-like body 75c to support the third plate-like body 75c.

[0037] The moving mechanism 77 moves the plate-like body 75 by moving the arms 76. For example, a cylinder is used as the moving mechanism 77. The moving mechanism 77 is provided so as to be able to move each arm 76 individually in the horizontal direction. The moving mechanism 77 is electrically connected to the control device 80, and the drive of the moving mechanism 77 is controlled.

[0038] By using such a gas supply unit 70, the gas supplied by the fan 72 passes through the through holes 75a1, 75b1, and 75c1 provided in the plate-like body 75 of the opening adjustment unit 74, is purified by the filter 73, and is sent to the processing chamber 20. At this time, the positions of the through holes 75a1, 75b1, and 75c1 in a plan view can be shifted by relatively moving the plate-like bodies 75 using the moving mechanism 77. When the positions of the through holes 75a1, 75b1, and 75c1 are shifted, at least a part of the through holes of one plate-like body 75 among the multiple plate-like bodies 75 is covered by a part other than the through holes of the other plate-like body 75, and the cross-sectional area of ​​the flow path through which the gas flows in the pipe 71 becomes smaller. Therefore, the opening ratio of the pipe 71 can be adjusted by relatively moving the plate-like bodies 75. As described above, since a small gap is formed between each plate-like body 75, even if each plate-like body 75 is moved relative to another, the generation of particles caused by the plate-like bodies 75 rubbing against each other can be suppressed.

[0039] The control device 80 controls each part of the substrate processing apparatus 10. The control device 80 includes a substrate processing control part 81, a fan control part 82, an aperture ratio control part 83, and a storage part 84. The substrate processing control part 81 controls the lifting mechanism 31, the rotation drive part 50, the swing mechanism 62b, etc., based on preset processing conditions for the substrate W. Furthermore, the substrate processing control part 81 controls the start and stop of the supply of the processing liquid by the liquid supply part 60.

[0040] The fan control unit 82 sets a target rotation speed of the fan 72 in accordance with preset substrate processing conditions. In addition, the fan control unit 82 controls the rotation speed of the fan 72 to accelerate or decelerate so as to reach the set target rotation speed.

[0041] The aperture ratio control unit 83 controls the moving mechanism 77 so as to adjust the aperture ratio of the pipe 71. In this embodiment, the aperture ratio of the pipe 71 is changed in response to a change in the rotation speed of the fan 72, which is controlled in response to preset processing conditions for the substrate W. The storage unit 84 stores programs and the like for controlling each unit of the substrate processing apparatus 10. The storage unit 84 stores, for example, the rotation speed of the substrate W by the rotation drive unit 50, processing conditions for the substrate W such as the amount of processing liquid supplied to the substrate W, the rotation speed of the fan 72 in response to the rotation speed of the substrate W, and the like.

[0042] (operation) The operation of the substrate processing apparatus 10 of this embodiment as described above will be described with reference to Figures 5 and 6 in addition to Figures 1 to 4. Figure 5 is a flow chart illustrating the operation of the substrate processing apparatus 10.

[0043] First, the inside of the processing chamber 20 is maintained at a negative pressure relative to the outside of the substrate processing apparatus 10 by exhausting gas from the exhaust path 24 while supplying gas by the fan 72. Here, the rotation speed of the fan 72 is set to a predetermined value (first fan rotation speed) by the fan control unit 82. When the substrate W is loaded, the cup 30 is located at a retreat position by the lifting mechanism 31. Also, the opening adjustment unit 74 is positioned by the moving mechanism 77 so that the through holes 75a1, 75b1, and 75c1 are at the same horizontal position as shown in FIG. 6(a). This results in a relatively large opening ratio of the pipe 71. In the following description, the state of the plate-like body 75 positioned so that the through holes 75a1, 75b1, and 75c1 are at the same horizontal position is referred to as a first state.

[0044] In this state, the shutter of the loading / unloading entrance 21a1 opens, and the robot hand loads the unprocessed substrate W onto the turntable 40 in the processing chamber 20 (step S01). The loaded substrate W is held by the holding member 41 of the turntable 40. The robot hand moves from the loading / unloading entrance 21a1 to the outside of the processing chamber 20, and the shutter closes. Then, the cup 30 is raised to the processing position by the lifting mechanism 31, so that the periphery of the substrate W is covered by the cup 30.

[0045] Next, the rotation drive unit 50 rotates the turntable 40 to start the rotation of the substrate W (step S02). At this time, the rotation number of the substrate W held on the turntable 40 is relatively low (low rotation speed), for example, several hundred rpm. In addition, as the rotation of the substrate W starts, the swing mechanism 62b swings the movable arm 62a to move the nozzle 61 to the discharge position. Then, the processing liquid is discharged from the nozzle 61 to supply the processing liquid to the center of the processing surface Wa of the rotating substrate W (step S03). The supplied processing liquid is spread over the entire processing surface Wa by centrifugal force, thereby performing the liquid processing process. When a predetermined time has elapsed (step S04: YES), the discharge of the processing liquid from the nozzle 61 is stopped, and the liquid processing process is ended (step S05). The swing mechanism 62b swings the movable arm 62a to move the nozzle 61 to the standby position.

[0046] Next, the process proceeds to step S06, where a drying process is performed. In step S06, the rotation speed of the substrate W is increased to a relatively high rotation speed (high rotation speed). The rotation speed of the substrate W is, for example, 1000 to 3000 rpm. As the rotation speed of the substrate W increases, the rotation speed of the fan 72 is decreased. In response to the increase in the rotation speed of the substrate W, the fan control unit 82 sets the target rotation speed of the fan 72 to a second fan rotation speed. The second fan rotation speed is smaller than the first fan rotation speed.

[0047] Furthermore, in step S06, the aperture ratio control unit 83 controls the moving mechanism 77 to reduce the aperture ratio of the pipe 71 while setting the target rotation speed of the fan 72. The aperture ratio control unit 83 controls the moving mechanism 77 to relatively move the first plate-like body 75a, the second plate-like body 75b, and the third plate-like body 75c, and sets the plate-like body 75 to the second state as shown in FIG. 6(c). The second state is a position in which the positions of the through holes 75a1, 75b1, and 75c1 in the horizontal direction are shifted in each plate-like body 75. This reduces the aperture ratio of the pipe 71. That is, the second state is a state in which the aperture ratio of the pipe 71 is relatively small and is smaller than the first state. In addition, in the aperture adjustment unit 74, each plate-like body 75 goes from the first state to the third state shown in FIG. 6(b), and then to the second state. The third state is a state in which the opening ratio of the pipe 71 is smaller than that in the first state and larger than that in the second state.

[0048] In step S06, when the target rotation speed of the fan 72 is set by the fan control unit 82, the rotation speed of the fan 72 is decelerated to the second fan rotation speed. That is, the rotation speed of the fan 72 is controlled to have a negative acceleration. During the period in which the rotation speed of the fan 72 has a negative acceleration, the moving mechanism 77 is controlled to gradually move each plate-like body 75 in the second state to the third state. As a result, the opening ratio of the pipe 71 can be increased according to the decrease in the amount of gas supplied by the fan 72 caused by the deceleration of the rotation speed of the fan 72. Therefore, the amount of gas supplied into the processing space of the processing chamber 20 can be stabilized.

[0049] When a predetermined time has elapsed since the start of deceleration of fan 72 (step S07: YES), the rotation speed of fan 72 reaches the second fan rotation speed. When the rotation speed of fan 72 reaches the second fan rotation speed, the rotation speed of fan 72 is maintained at the second fan rotation speed. In other words, the acceleration of the rotation speed of fan 72 becomes zero. When the acceleration of the rotation speed of fan 72 becomes zero, opening ratio control unit 83 controls moving mechanism 77 to move each plate-like body 75 to the first state (step S08).

[0050] After a predetermined time has elapsed (step S09: YES), drying of the substrate W is completed, and the rotation of the turntable 40 is stopped, and the rotation of the substrate W is also stopped (step S10). The shutter of the loading / unloading entrance 21a1 opens, and the robot hand is inserted into the processing chamber 20, holds the processed substrate W, and unloads it from the processing chamber 20 (step S11). Then, the processing of the substrate W by the substrate processing apparatus 10 is completed.

[0051] [1-2. Modifications] The control device 80 may control the substrate processing apparatus 10 as follows. That is, the target rotation speed of the fan 72 may be set to a second fan rotation speed in response to a decrease in the rotation speed of the substrate W. The second fan rotation speed in this modification is a rotation speed higher than the first fan rotation speed. In this way, even when the rotation speed of the fan 72 is increased, the aperture adjustment unit 74 reduces the aperture ratio of the pipe 71 during a period in which acceleration (positive acceleration) occurs in the fan 72. The operation when decreasing the rotation speed of the substrate W is specifically as follows.

[0052] First, the fan 72 rotates at a first fan rotation speed. Also, each plate-like body 75 is in a first state. Here, when the rotation speed of the substrate W is decreased, the target rotation speed of the fan 72 is set to the second fan rotation speed at a timing a predetermined time before the timing when the rotation speed of the substrate W is changed. As described above, in this modification, the second fan rotation speed is greater than the first fan rotation speed. Also, the predetermined time is a time during which the pressure in the processing chamber 20 can be prevented from significantly leaning toward a negative pressure after the rotation speed of the substrate W starts to decrease by increasing the rotation speed of the fan 72 before the rotation speed of the substrate W decreases. The predetermined time is stored in the storage unit 74, and is, for example, about 3 seconds. Then, the rotation speed of the fan 72 accelerates before the rotation speed of the substrate W decreases, and in a period during which a positive acceleration occurs in the rotation speed of the fan 72, the aperture ratio control unit 83 controls the moving mechanism 77 to reduce the aperture ratio of the pipe 71.

[0053] When the rotation speed of the fan 72 starts to accelerate, the aperture ratio control unit 83 controls the moving mechanism 77 to move each plate-like body 75 to the third state. Thereafter, during a period in which a positive acceleration occurs in the rotation speed of the fan 72, each plate-like body 75 is gradually moved to the second state. This makes it possible to reduce the aperture ratio of the pipe 71 as the rotation speed of the fan 72 increases. Therefore, it is possible to prevent an increase in the amount of gas supplied into the processing space of the processing chamber 20 by the fan 72 before the rotation speed of the substrate W starts to decrease.

[0054] When the rotation speed of the substrate W starts to decrease, the aperture ratio control unit 83 controls the moving mechanism 77 to move each plate-like body 75 to the first state. At this time, the rotation speed of the fan 72 is already higher than the first fan rotation speed. Also, each plate-like body 75 is in the first state, and the aperture ratio of the pipe 71 is relatively large. This allows a sufficient amount of gas to be supplied into the processing chamber 20. Therefore, it is possible to prevent the pressure in the processing chamber 20 from decreasing when the rotation speed of the substrate W decreases.

[0055] [1-3. Effects] (1) The substrate processing apparatus 10 as described above includes a processing chamber 20 having an opening 23a formed at an upper portion thereof for processing an introduced substrate W, a gas supply unit 70 for supplying gas into the processing chamber 20 through the opening 23a, a turntable 40 (holding unit) for holding the substrate W in the processing chamber 20, a rotation drive unit 50 for rotating the turntable 40 to rotate the substrate W held on the turntable 40, and a control device 80 for controlling the gas supply unit 70. The gas supply unit 70 includes a fan 72 that rotates to supply gas into the processing chamber 20, a pipe 71 through which the gas supplied by the fan 72 flows, and an opening adjustment unit 74 for adjusting the opening ratio of the pipe 71. The control device 80 controls the opening adjustment unit 74 to reduce the opening ratio of the pipe 71 during at least a portion of a period during which a positive or negative acceleration occurs in the rotation speed of the fan 72.

[0056] In the substrate processing apparatus 10, the rotation speed of the fan 72 is changed in order to maintain the pressure in the processing chamber 20. However, it takes time from when the target rotation speed of the fan 72 is set and the rotation speed of the fan 72 starts to accelerate or decelerate until the target rotation speed is actually reached. According to the substrate processing apparatus 10 of the present embodiment, the aperture adjustment unit 74 can reduce the aperture ratio of the pipe 71 at least during the period when the rotation speed of the fan 72 is positively or negatively accelerated. This narrows the flow path of the gas sent out by the fan 72, and the amount of gas supplied into the processing chamber 20 by the fan 72 can be reduced. Therefore, it is possible to suppress the pressure in the processing chamber 20 from fluctuating until the rotation speed of the fan 72 reaches the target rotation speed.

[0057] (2) In addition, the opening adjustment unit 74 has a first plate-shaped body 75a having a plurality of through holes 75a1 formed therein, and a second plate-shaped body 75b having a plurality of through holes 75b1 formed therein, the first plate-shaped body 75a and the second plate-shaped body 75b are arranged so as to be stacked, and the control device 80 reduces the opening rate of the piping 71 by moving the first plate-shaped body 75a and the second plate-shaped body 75b relatively to each other to change the position of the through hole 75b1 formed in the second plate-shaped body 75b relative to the position of the through hole 75a1 formed in the first plate-shaped body 75a.

[0058] In this manner, the opening ratio of the pipes 71 can be adjusted by the simple action of relatively moving each of the plate-like bodies 75. Therefore, the opening ratio of the pipes 71 can be quickly changed, and fluctuations in the pressure inside the processing chamber 20 can be suppressed.

[0059] [2-1. Second embodiment] Next, a substrate processing apparatus 100 according to a second embodiment will be described with reference to Fig. 7. In the second embodiment, only differences from the first embodiment will be described, and the same components as those in the first embodiment will be denoted by the same reference numerals and description thereof will be omitted.

[0060] In the first embodiment and its modified examples, the target rotation speed of the fan 72 is set so that the rotation speed of the fan 72 is changed in response to a change in the rotation speed of the substrate W. In the second embodiment, the pressure inside the processing chamber 20 is measured, and the target rotation speed of the fan 72 is set in response to the measured pressure.

[0061] The substrate processing apparatus 100 further includes a measuring unit 125. The measuring unit 125 is provided in the processing chamber 20 and measures the pressure inside the processing chamber 20. More precisely, the measuring unit 125 measures the pressure of a space surrounded by a pair of opposing sidewalls 21 a, a pair of sidewalls 22 a, the floor 22 b, and the flange 23, which is the pressure of the space for processing the substrate W. The measuring unit 125 is a barometer. The measuring unit 125 is electrically connected to the control device 80, and its operation is controlled by the control device 80. The measuring unit 125 also transmits the measured pressure to the control device 80.

[0062] The control device 80 further includes a pressure control unit 185. The memory unit 84 also stores a target pressure P1 in the processing chamber 20. The target pressure P1 is, for example, a pressure that is slightly negative compared to the atmospheric pressure outside the substrate processing apparatus 100, and is a predetermined pressure range having upper and lower threshold values. The pressure control unit 185 determines whether the pressure in the processing chamber 20 measured by the measurement unit 125 is the target pressure P1. If it is determined that the pressure is not the target pressure P1, the pressure control unit 185 transmits a signal to the fan control unit 82.

[0063] The fan control unit 82, which has received a signal from the pressure control unit 185, sets the target rotation speed of the fan 72 so as to change the rotation speed of the fan 72. Specifically, when the pressure inside the processing chamber 20 measured by the measurement unit 125 is higher than the target pressure P1, the target rotation speed of the fan 72 is set so as to decrease the rotation speed of the fan 72. Also, when the pressure inside the processing chamber 20 measured by the measurement unit 125 is lower than the target pressure P1, the target rotation speed of the fan 72 is set so as to increase the rotation speed of the fan 72. That is, when the control device 80 detects that the pressure inside the processing chamber 20 has deviated from the target pressure P1, it controls the rotation speed of the fan 72 to be changed.

[0064] When the target rotation speed of the fan 72 is set, the rotation speed of the fan 72 starts to accelerate or decelerate. In a period in which the acceleration of the rotation speed of the fan 72 is positive or negative, the opening ratio control unit 83 controls the opening adjustment unit 74 to reduce the opening ratio of the pipe 71. The operation of the opening adjustment unit 74 to reduce the opening ratio of the pipe 71 is similar to that of the first embodiment described above. When the rotation speed of the fan 72 reaches the set target rotation speed and the acceleration of the rotation speed of the fan 72 becomes zero, the opening adjustment unit 74 controls the opening adjustment unit 74 to return the opening ratio of the pipe 71 to the original value.

[0065] [2-2. Effects] (1) The substrate processing apparatus 100 further includes a measurement unit 125 that measures the pressure within the processing chamber 20, and when the control device 80 determines that the pressure within the processing chamber 20 measured by the measurement unit 125 is not the target pressure P1, it controls the fan 72 to change its rotation speed.

[0066] In this way, also in the second embodiment, the opening ratio of the pipe 71 is reduced during a period in which a positive or negative acceleration occurs in the rotation speed of the fan 72. This makes it possible to suppress fluctuations in the pressure inside the processing chamber 20 from when a target rotation speed of the fan 72 is set in the fan 72 until the rotation speed of the fan 72 reaches the target rotation speed.

[0067] [3-1. Third embodiment] Next, a third embodiment will be described. The configuration of the substrate processing apparatus 10 according to the third embodiment is basically the same as that of the first embodiment described above. Therefore, in the third embodiment, only differences from the first embodiment will be described. The operation of the substrate processing apparatus 10 in the third embodiment is shown in the flowchart of FIG. 8. Note that in FIG. 8, as an example of the operation of the substrate processing apparatus 10, a case where the rotation speed of the substrate W is increased will be described.

[0068] In the third embodiment, when the control device 80 changes the rotation speed of the substrate W, the control device 80 judges whether or not the amount of change in the rotation speed before and after the change is equal to or greater than a predetermined value. Then, when it is judged that the amount of change in the rotation speed is equal to or greater than the predetermined value, the control device 80 controls the opening adjustment unit 74 to adjust the opening ratio of the pipe 71.

[0069] The substrate processing apparatus 10 performs steps S101 to S105 shown in FIG. 8. Steps S101 to S105 are the same as steps S01 to S05 described above. Next, the process proceeds to step S106, where a drying process is performed. In step S106, the rotation speed of the substrate W is increased to a relatively high rotation speed (high rotation speed). In addition, as the rotation speed of the substrate W increases, the rotation speed of the fan 72 is decreased. In response to the increase in the rotation speed of the substrate W, the fan control unit 82 sets the target rotation speed of the fan 72 to a second fan rotation speed. The second fan rotation speed is smaller than the first fan rotation speed.

[0070] It is determined whether the change in the rotation speed of the substrate W raised in step S106 before and after the increase is equal to or greater than a predetermined value (step S107). The control device 80 calculates the change in the rotation speed of the substrate W by comparing the rotation speed before the increase in the rotation speed of the substrate W with the rotation speed after the increase. Then, it is determined whether the calculated change in the rotation speed of the substrate W is equal to or greater than a predetermined value. The predetermined value of the change in the rotation speed of the substrate W can be, for example, 350 rpm. If it is determined that the change is equal to or greater than the predetermined value (step S107: YES), the aperture ratio control unit 83 controls the moving mechanism 77 to relatively move each plate-like body 75 to the second state (step S108). During a period in which a negative acceleration is generated in the rotation speed of the fan 72, the moving mechanism 77 is controlled to gradually move each plate-like body 75 in the second state to the third state.

[0071] When a predetermined time has elapsed since the rotation speed of the fan 72 started to decelerate (step S109: YES), the rotation speed of the fan 72 reaches the second fan rotation speed. When the rotation speed of the fan 72 reaches the second fan rotation speed, the rotation speed of the fan 72 is maintained at the second fan rotation speed. In other words, the acceleration of the rotation speed of the fan 72 becomes zero. When the acceleration of the rotation speed of the fan 72 becomes zero, the opening ratio control unit 83 controls the moving mechanism 77 to move each plate-like body 75 to the first state (step S110).

[0072] On the other hand, when it is determined that the amount of change in the rotation speed of the substrate W is less than the predetermined value (step S107: NO), the opening adjustment part 74 does not adjust the opening ratio of the pipe 71, and the process proceeds to step S112.

[0073] Then, after a predetermined time has elapsed (step S112: YES), when drying of the substrate W is completed, the rotation of the turntable 40 is stopped, and the rotation of the substrate W is stopped (step S113). The shutter of the loading / unloading entrance 21a1 opens, and the robot hand is inserted into the processing chamber 20, holds the processed substrate W, and unloads it from the processing chamber 20 (step S114). Then, the processing of the substrate W by the substrate processing apparatus 10 is completed.

[0074] Although the case where the rotation speed of the substrate W is increased has been described as an example, the same can be applied to the case where the rotation speed of the substrate W is decreased. When the control device 80 decreases the rotation speed of the substrate W, the control device 80 calculates the amount of change in the rotation speed of the substrate W by comparing the rotation speed before and after the rotation speed of the substrate W is decreased. At this time, the amount of change may be calculated as an absolute value. Alternatively, a predetermined value when increasing the rotation speed of the substrate W and a predetermined value when decreasing the rotation speed of the substrate W may be provided. Then, it is determined whether the calculated amount of change in the rotation speed of the substrate W is equal to or greater than a predetermined value, and if it is determined that the amount of change is equal to or greater than the predetermined value, the opening ratio of the pipe 71 is reduced.

[0075] [3-2. Effects] (1) When the rotation speed of the substrate W is changed by the rotation drive unit 50, the control device 80 controls the opening rate of the pipe 71 to be reduced if the change in the rotation speed of the substrate W before and after the change is greater than or equal to a predetermined value.

[0076] When changing the rotation speed of the substrate W, the larger the difference between the rotation speed before and after the change, the larger the effect on the pressure in the processing chamber 20. Therefore, a target rotation speed is set so that the rotation speed of the fan 72 is changed in accordance with the change in the rotation speed of the substrate W. At this time, if the difference between the rotation speed of the fan 72 (the rotation speed at that time) and the target rotation speed is large, the time from when the rotation speed of the fan 72 starts to be accelerated or decelerated until the target rotation speed is reached becomes long. According to this embodiment, when the time until the rotation speed of the fan 72 reaches the target rotation speed becomes particularly long, the opening adjustment unit 74 adjusts the opening ratio of the pipe 71. This makes it possible to suppress fluctuations in the pressure in the processing chamber 20.

[0077] [4. Other embodiments] In the above-described first to third embodiments, the following modifications can also be applied.

[0078] (1) The shape of each of the through holes 75a1, 75b1, and 75c1 formed in each plate-like body 75 is not limited to a rectangular shape, and may be a circular shape or other shape. Furthermore, the through holes 75a1, 75b1, and 75c1 may have different sizes and shapes. As long as the opening ratio of the pipe 71 can be changed by moving each plate-like body 75 relatively, the shape of the through holes 75a1, 75b1, and 75c1 is not important.

[0079] (2) Although three plate-like bodies 75 (first plate-like body 75a, second plate-like body 75b, and third plate-like body 75c) are provided in the above description, two or four or more may be provided. By providing at least two plate-like bodies 75, the aperture ratio of pipe 71 can be adjusted. Furthermore, by providing three or more plate-like bodies 75, the aperture ratio of pipe 71 can be adjusted more precisely.

[0080] (3) At least one of the plurality of plate-like bodies 75 may be provided movably. All of the plurality of plate-like bodies 75 may be connected to the moving mechanism 77 via an arm, or some of the plurality of plate-like bodies 75 may be fixed to the pipe 71.

[0081] (4) In the first embodiment described above, in step S06, the rotation speed of the substrate W, the rotation speed of the fan 72, and the aperture ratio of the pipe 71 are changed by the aperture adjustment unit 74. However, this is not limited to the above. For example, the aperture ratio control unit 83 may control the aperture ratio of the pipe 71 to start being reduced by the aperture adjustment unit 74 before the target rotation speed of the fan 72 is set and positive or negative acceleration occurs in the rotation speed of the fan 72.

[0082] (5) It is not necessary to reduce the opening ratio of the pipe 71 during the entire period when positive or negative acceleration is occurring in the fan 72. By using the opening adjustment unit 74 to reduce the opening ratio of the pipe 71 during at least a portion of the period when positive or negative acceleration is occurring in the fan 72, it is possible to adjust the amount of gas supplied by the fan 72 into the processing space of the processing chamber 20.

[0083] (6) After the rotation speed of fan 72 reaches the target rotation speed, plate-shaped body 75 of opening adjustment part 74 is returned to the first state. That is, after the rotation speed of fan 72 reaches the target rotation speed, the opening ratio of pipe 71 is controlled to be relatively large. Here, the timing of returning to the first state does not have to be exactly the same as when the rotation speed of fan 72 reaches the target rotation speed.

[0084] (7) In the gas supply unit 70, the opening adjustment unit 74 is provided between the fan 72 and the filter 73. However, the opening adjustment unit 74 may be provided upstream of the fan 72. That is, the opening adjustment unit 74, the fan 72, and the filter 73 may be arranged inside the piping 71 in the order of furthest from the processing chamber 20. However, as described above, by providing the opening adjustment unit 74 downstream of the fan 72, the gas sent out by the fan 72 can be supplied into the processing space of the processing chamber 20 in a rectified state by passing through the through holes 75a1, 75b1, and 75c1.

[0085] (8) Although the embodiment of the present invention and the modified examples of each part have been described above, these embodiments and the modified examples of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims. [Explanation of symbols]

[0086] 10, 100 Substrate processing apparatus 20 Processing Room 23a opening 30 cups 40 Rotating Table 50 Rotation drive unit 60 Liquid supply section 70 Gas supply section 71 Piping 72 Fans 73 Filters 74 Aperture adjustment section 75 Plate-shaped body 76 Arm 77 Moving mechanism 80 Control device 125 Measuring section W substrate P1 Target Pressure

Claims

1. a processing chamber having an opening at an upper portion thereof for processing a substrate carried therein; a gas supply unit that supplies a gas into the processing chamber through the opening; a holder for holding the substrate in the processing chamber; a rotation drive unit that rotates the holder to rotate the substrate held by the holder; A control device for controlling the gas supply unit; having The gas supply unit includes: A fan that rotates to supply gas into the processing chamber; A pipe through which the gas supplied by the fan flows; An opening adjustment unit that adjusts the opening ratio of the pipe; Equipped with The control device includes: reducing the opening ratio of the pipe by controlling the opening adjustment unit during at least a part of a period during which a positive or negative acceleration occurs in the rotation speed of the fan; Substrate processing equipment.

2. the opening adjustment portion has a first plate-like body having a plurality of through holes formed therein and a second plate-like body having a plurality of through holes formed therein; the first plate-like body and the second plate-like body are arranged so as to be stacked, the control device reduces the aperture ratio of the piping by changing the position of the through hole formed in the second plate-like body with respect to the position of the through hole formed in the first plate-like body by relatively moving the first plate-like body and the second plate-like body. The substrate processing apparatus according to claim 1 .

3. A measuring unit for measuring a pressure in the processing chamber is further provided. the control device controls the fan to change a rotation speed when it is determined that the pressure in the processing chamber measured by the measurement unit is not a target pressure. The substrate processing apparatus according to claim 1 .

4. The opening adjustment portion is provided downstream of the fan in a flow direction of the gas supplied by the fan. The substrate processing apparatus according to claim 1 .

5. The control device reduces the opening ratio of the pipe during a period in which a positive or negative acceleration occurs in the rotation speed of the fan, When the acceleration of the rotation speed of the fan becomes zero, the opening ratio of the pipe is returned to its original value. The substrate processing apparatus according to claim 1 .

6. the control device controls the opening ratio of the pipe to be reduced when a change in the rotation speed of the substrate caused by the rotation drive unit is greater than or equal to a predetermined value. The substrate processing apparatus according to claim 1 .

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