Manufacturing method and manufacturing equipment for semiconductor element, abrasive wheel and method for manufacturing the same

Abstract

To provide a manufacturing method and manufacturing equipment for a semiconductor element with improved yield, abrasive wheels and a method for manufacturing the same.SOLUTION: A method for manufacturing a semiconductor element includes the steps for: preparing a substrate ST; and grinding the main surface of the substrate ST with an abrasive wheel 11. The abrasive wheel 11 includes abrasive grains, a binder, and filler, and the filler includes diatomaceous earth. This allows the filler to enter the melt that makes up the interior and reduce shrinkage, resulting in a high-quality abrasive wheel 11 and improving the yield of the semiconductor element manufacturing process.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a method and apparatus for manufacturing a semiconductor element, and a grinding wheel and a method for manufacturing the same. [Background technology]

[0002] In the manufacture of semiconductor elements such as LEDs, wafers such as sapphire substrates are ground with a grindstone. Diamond, silica, and the like have traditionally been used as abrasive grains for such grindstones (see, for example, Patent Document 1). From the standpoint of reducing the cost of semiconductor elements, there is a demand for further improvement in yield. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2021-175774 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of one embodiment of the present disclosure is to provide a manufacturing method and manufacturing apparatus for semiconductor elements, and a grinding wheel and a manufacturing method thereof, with improved yield.An object of another embodiment is to provide a manufacturing method and manufacturing apparatus for semiconductor elements, and a grinding wheel and a manufacturing method thereof, which achieve a balance between the conflicting characteristics of the grinding performance and shrinkage of the grinding wheel.Note that the description of these objects does not preclude the existence of other objects.In addition, it is not necessary for one embodiment of the present disclosure to solve all of these objects.Furthermore, it is possible to extract other objects from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0005] According to one embodiment of the present disclosure, a method for manufacturing a semiconductor element includes a step of preparing a substrate and a step of grinding a main surface of the substrate with a grinding wheel, the grinding wheel including abrasive grains, a binder, and a filler, the filler including diatomaceous earth.

[0006] According to another embodiment of the grinding tool of the present disclosure, the grinding tool includes a disk-shaped holding member and a plurality of grinding wheels arranged on a circumferential portion of the holding member, each grinding wheel including abrasive grains, a binder, and a filler, and the filler includes diatomaceous earth.

[0007] According to another embodiment of the grinding wheel of the present disclosure, the grinding wheel is used in the grinding tool, and includes abrasive grains, a binder, and a filler, and the filler includes diatomaceous earth.

[0008] According to another embodiment of the present disclosure, there is provided a method for manufacturing a grinding wheel for use in a method for manufacturing semiconductor elements, the method including the steps of preparing raw materials, such as abrasive grains, a binder, a filler, and an auxiliary agent, mixing the raw materials, placing the mixed raw materials in a mold and molding them to obtain an intermediate body, and firing the intermediate body, wherein the filler includes diatomaceous earth. Effect of the Invention

[0009] According to the method for manufacturing a semiconductor element according to one embodiment of the present disclosure, the filler penetrates into the molten material that constitutes the interior and reduces shrinkage, thereby producing a high-quality grinding wheel and improving the yield of the method for manufacturing a semiconductor element. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic side view showing a grinding device according to a first embodiment. [Diagram 2] 2 is a perspective view showing the grinding tool in FIG. 1, as viewed obliquely from below. [Diagram 3] Photographs of the appearance and SEM images showing the raw materials of the grinding wheel. [Figure 4] This is an SEM photo of a grinding wheel. [Diagram 5] FIG. 5 is a more enlarged SEM photograph of FIG. [Figure 6]FIG. 6A is a photograph showing the grindstone (intermediate body) before firing, FIG. 6B is a photograph showing the grindstone according to Example 2 after firing, FIG. 6C is a photograph showing the grindstone according to Example 1 after firing, and FIG. 6D is a photograph showing the grindstone according to Comparative Example 3 after firing. [Figure 7] 1 is a graph showing the grinding ratios of the grindstones according to Example 1 and Comparative Examples 1 and 2. [Figure 8] 1 is a graph showing the relationship between the amount of filler blended, the grinding ratio, and the amount of thermal shrinkage. [Figure 9] FIG. 9A is a schematic cross-sectional view showing the state of the grindstone according to Comparative Example 2 after firing, and FIG. 9B is a schematic cross-sectional view showing the state after the filler of FIG. 9A has been removed. [Figure 10] FIG. 2 is a schematic cross-sectional view showing the state of the grindstone according to Example 1 after firing. [Figure 11] 1 is a graph showing the progress of grinding behavior of the grinding wheels of Example 1 and Comparative Example 1. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, an embodiment of the present disclosure will be described based on the drawings. However, the embodiment shown below is an example for embodying the technical idea of ​​the present disclosure, and the present disclosure is not specified to the following. In addition, this specification never specifies the members shown in the claims to the members of the embodiment. In particular, the dimensions, materials, shapes, and relative positions of the components described in the embodiment are not intended to limit the scope of the present disclosure to only those, and are merely explanatory examples, unless otherwise specified. Note that the size and positional relationship of the members shown in each drawing may be exaggerated to clarify the explanation. Furthermore, in the following explanation, the same name and symbol indicate the same or similar members, and detailed explanation will be omitted as appropriate. Furthermore, each element constituting the present disclosure may be configured as a form in which multiple elements are composed of the same member and one member serves multiple elements, or conversely, the function of one member can be shared by multiple members. [Embodiment 1]

[0012] A grinding apparatus 100 according to a first embodiment of the present disclosure is shown in Fig. 1. The grinding apparatus 100 shown in this figure includes a chuck table 1, a grinding machine 10, and a machining liquid supply unit 20.

[0013] The chuck table 1 is a member for holding a substrate ST to be ground. The substrate ST may be a sapphire substrate or the like. While holding the substrate ST, the chuck table 1 rotates the substrate ST itself and brings it into contact with a grinding machine 10 for grinding.

[0014] The grinding machine 10 is a member for grinding the substrate ST. The grinding machine 10 includes a grinding tool 12 and a grindstone rotation shaft 14. The grindstone rotation shaft 14 rotates the grinding tool 12 set on its lower surface. (Grinding tools 12)

[0015] As shown in the perspective view of Fig. 2, the grinding tool 12 includes a disk-shaped holding member 13 and a plurality of grindstones 11 arranged on the circumferential portion of the holding member 13. The holding member 13 is formed in the shape of a rotatable wheel, and has an annular groove 15 for fixing the grindstones 11 on the circumferential portion. The plurality of grindstones 11 are fixed at a distance in the groove 15. An adhesive or the like is used to fix the grindstones 11. Each grindstone 11 is formed in a rectangular shape. When the grindstone 11 wears out, the old grindstone is removed from the holding member 13 and replaced with a new grindstone.

[0016] The machining fluid supply unit 20 includes a tank 21 for storing the machining fluid AB, and a machining fluid supply pipe 23 for supplying the machining fluid AB from the tank 21 to the grinding tool 12 using a machining fluid supply means 22. The machining fluid AB is, for example, pure water.

[0017] This grinding device 100 is configured to supply machining fluid AB from machining fluid supply piping 23 while bringing the surface to be ground of the substrate ST held on the chuck table 1 into contact with the grinding tool 12 and performing grinding by rotating the chuck table 1 and the grinding wheel rotation shaft 14 relative to one another.

[0018] The grinding surface of the substrate ST can be ground using such a grinding device 100. Here, the grinding device 100 grinds one side of the substrate ST as the grinding surface, but it is also possible to grind the grinding surfaces (both sides) of the substrate using, for example, a double-sided simultaneous grinding device in which grinding tools similar to those of the grinding device are arranged on the top and bottom surfaces of the substrate.

[0019] Note that the grinding apparatus 100 is not limited to this configuration, and it is possible to appropriately use known configuration examples of the grinding apparatus 100. For example, in the example of Fig. 1, a configuration has been described in which the chuck table 1 with the substrate ST set on its upper surface is disposed on the lower surface side of the grinding tool 12, but the grinding tool may be disposed upside down, and the chuck table with the substrate set on its lower surface may be disposed on the upper surface side of the grinding tool.

[0020] The chuck table 1 may rotate while moving the rotation axis, in addition to rotating without changing the position of the axis of the rotation axis. The grindstone rotation axis 14 and the grinding tool 12 are larger than the chuck table 1 in FIG. 1. However, the present invention is not limited to this, and may be the same size as or smaller than the substrate ST. In this case, it is preferable to move the chuck table 1 and the grindstone rotation axis 14 relatively to grind the entire surface of the substrate ST to be ground. Furthermore, the grindstone rotation axis 14 and the grinding tool 12 do not have to rotate, and may be, for example, a belt-type device that moves in one direction.

[0021] There is no particular restriction on the grinding conditions of the grinding device 100, but it is also possible to increase the grinding pressure and improve the grinding speed by applying a load to the chuck table 1 and pressing it against the grinding tool 12. For example, in the case of the in-feed method, the grinding pressure is preferably about 300 to 600 N, and more preferably about 400 to 500 N from the viewpoint of uniformity of the grinding speed within the grinding surface of the substrate ST, flatness, and prevention of grinding defects such as scratches. The rotation speed of the grinding wheel rotation shaft 14 and the chuck table 1 is preferably about 300 to 700 rpm, but is not limited thereto. The supply amount of the processing liquid AB is appropriately adjusted and selected depending on the material constituting the grinding surface, the composition of the processing liquid, the above-mentioned grinding conditions, and the like. For example, when grinding a sapphire wafer with a diameter of 4 inches, the supply amount is preferably about 1 to 4 liters / min.

[0022] 1 also has a recovery means for recovering the machining fluid AB used in grinding from the grinding tool 12, and is configured so that the recovered machining fluid AB is transported to a tank 21. The machining fluid AB returned to the tank 21 is again supplied to the grinding tool 12 via a machining fluid supply pipe 23 by a machining fluid supply means 22. The machining fluid AB is recycled in this manner.

[0023] In the grinding method of this embodiment, the machining fluid supplied to the grinding tool is used for grinding and then collected, but it is also possible to use a grinding device with a so-called free-flowing configuration in which the machining fluid is discarded after each grinding use.

[0024] The method for manufacturing a semiconductor device is as follows: First, a substrate ST is prepared. Next, the main surface of the substrate ST is ground with a grindstone 11 using the grinding apparatus 100 shown in FIG. (Whetstone 11)

[0025] Each grinding wheel 11 includes abrasive grains, a binder, and a filler. Diamond or cBN (cubic boron nitride) can be used as the abrasive grains. The binder, also called a bond material, can be an organic material containing a resin such as a phenolic resin or a resinoid bond, or an inorganic material such as a vitrified bond. The particle diameter D50 of the abrasive grains is preferably, for example, 3 μm to 18 μm, and more preferably 6 μm to 12 μm. In the present disclosure, the average particle diameter was measured using a laser diffraction particle diameter measuring device.

[0026] The filler contains diatomaceous earth. With this configuration, the diatomaceous earth penetrates into the molten binder inside the grindstone 11, reducing shrinkage and providing a high-quality grindstone, thereby improving the yield of the semiconductor device manufacturing method.

[0027] Diatomaceous earth has a honeycomb structure with multiple pores smaller than the grain size of the abrasive grains. Specifically, it has pores smaller than the grain size of diamond abrasive grains, for example, pores with an average inner diameter of 0.1 μm to 3.0 μm. This allows the filler to reduce shrinkage during firing of the grindstone. The average inner diameter is the average of values ​​obtained by measuring several points using an image measurement method.

[0028] The content ratio of the abrasive grains, binder, and filler after firing is preferably 10-50% grindstone, 10-50% binder, and 40-80% binder. By setting such a ratio, it is possible to achieve both the amount of shrinkage of the grindstone and grinding performance (details will be described later).

[0029] Furthermore, the grinding wheel 11 may contain a porous material and an auxiliary agent in addition to the abrasive grains, binder, and filler. These raw materials are shown in FIG. 3. As the porous material, a material having a higher melting point than the auxiliary agent is preferable, and for example, an acrylic resin can be used. As the auxiliary agent, a material having a low softening point lower than the temperature during temporary hardening is preferable, and for example, an acrylic resin can be used. When an acrylic resin is used as the porous material and the auxiliary agent, it is preferable to use an acrylic resin used for the porous material that has a higher melting point.

[0030] These pore materials and auxiliary agents disappear during the firing process when the grinding wheel 11 is manufactured. For this reason, it was known that conventional grinding wheels shrink and become distorted in shape when fired. When the grinding wheel shrinks and becomes distorted in shape, it becomes difficult to measure the dimensions and density of the grinding wheel. In addition, density unevenness occurs depending on the part, which raises concerns about unstable grinding behavior.

[0031] In response to this, we discovered that by using diatomaceous earth as a filler, it is possible to reduce shrinkage by leaving the diatomaceous earth inside the grindstone even after firing. The reason for this is that diatomaceous earth is porous, and the average inner diameter of each pore that constitutes the porous structure is smaller than the grain size of the abrasive grains, so that the honeycomb-structured diatomaceous earth penetrates into the molten material that forms inside the grindstone when it is fired, thereby reducing shrinkage. This is shown in the SEM photographs of Figure 4 (1000x) and Figure 5 (3000x).

[0032] Furthermore, it is preferable that the filler is an insoluble porous brittle material, which allows the grinding wheel to maintain its strength while crumbling immediately upon grinding, thereby contributing to improved grinding performance. [Method of manufacturing grindstones]

[0033] Here, we will explain the method of manufacturing the grindstone used in the manufacturing method of semiconductor devices. First, prepare the raw materials such as diamond abrasive grains, binder, pore material, filler, and auxiliary agents. These raw materials are weighed using an electronic balance and placed in a container.

[0034] Next, these raw materials are mixed. Here, the container containing the weighed raw materials is placed in a mixer and mixed.

[0035] The mixed raw materials are then placed in a mold and molded to obtain an intermediate body. First, the mixed raw materials are filled into the mold. Next, the mold filled with the raw materials is molded using a hot press and temporarily solidified. The intermediate body obtained after molding and temporary solidification is then removed from the mold. Further inspection and measurement processes involve measuring the mass and dimensions of the intermediate body. If the inspection results in a pass, the intermediate body is cut to the size of the grinding wheel. At this stage, it has not been fired and has been temporarily solidified, so it can be cut easily. Furthermore, an appearance inspection of the cut intermediate body and measurements of its mass and dimensions are performed. If the inspection results in a pass, the intermediate body is placed in a crucible as a pre-firing step and embedded in alumina powder to reduce firing unevenness.

[0036] The intermediate thus obtained is sintered. The intermediate is placed in a sintering furnace and sintered to obtain a grindstone. The sintering temperature is, for example, 700°C to 900°C, and the sintering atmosphere is air or nitrogen. After sintering, the appearance, mass, and dimensions of the grindstone are inspected, and the size is adjusted as necessary. (Examples 1 to 2, Comparative Examples 1 to 3)

[0037] Here, grinding wheels according to Examples 1-2 and Comparative Examples 1-3 were prepared and their grinding performance was examined. Here, in Example 1, 2.0g of diatomaceous earth with a particle diameter D50 of 30 μm was prepared as a filler, 3.0g of diamond with a particle diameter D50 of 8 μm was prepared as an abrasive grain, 7.0g of vitrified bond with a particle diameter D50 of 30 μm was prepared as a binder, 4.0g of acrylic resin with a particle diameter D50 of 95 μm was prepared as a porous material, and 2.0g of acrylic resin with a particle diameter D50 of 50 μm was prepared as an auxiliary, and mixed. As shown in FIG. 3, the blending ratio at the time of mixing was 11.1% filler, 16.7% abrasive grain, 38.9% binder, 22.2% porous material, and 11.1% auxiliary. This mixture was fired at 815°C for 10 hours to obtain a grinding wheel. After firing, the content ratios were 16.7% filler, 25.0% abrasive grain, 58.3% binder, and 0% pores and auxiliary agents.

[0038] In Example 2, a grindstone was obtained under the same conditions as Example 1, except that the amount of diatomaceous earth was 4 g. The mixing ratios were 20% filler, 15% abrasive grains, 35% binder, 20% pore material, and 10% auxiliary agent. After firing, the contents were 28.5% filler, 21.5% abrasive grains, 50.0% binder, and 0% pore and auxiliary agents.

[0039] On the other hand, as Comparative Example 1, a grindstone was obtained using 2g of zeolite as the filler, with the other conditions being the same as those of Example 1. The mixing ratios were 11.1% filler, 16.7% abrasive grains, 38.9% binder, 22.2% pore material, and 11.1% auxiliary agent. After firing, the contents were 16.7% filler, 25.0% abrasive grains, 58.3% binder, and 0% pore and auxiliary agents.

[0040] As Comparative Example 2, a grinding wheel manufactured by Company A was purchased and prepared.

[0041] Furthermore, as Comparative Example 3, a grindstone was obtained under the same conditions as Example 1, except that no filler was used. The mixing ratios were 18.8% abrasive grains, 43.8% binder, 25.0% pore material, and 12.5% ​​auxiliary agent. After firing, the content ratios were 30% abrasive grains, 70% binder, and 0% pore and auxiliary agents.

[0042] FIG. 6A shows an intermediate body before firing of the molded body, and FIG. 6B to FIG. 6D show the grindstone after firing. FIG. 6B shows the grindstone according to Example 2, FIG. 6C shows the grindstone according to Example 1, and FIG. 6D shows the grindstone according to Comparative Example 3. As shown in these figures, the grindstone according to Example 2, in which 4 g of diatomaceous earth was blended as a filler, was a rectangular grindstone that did not change shape even after firing. In addition, in Example 1, in which 2 g of diatomaceous earth was blended, although some distortion of shape was observed, the size and shape were almost the same. On the other hand, in Comparative Example 3, which did not contain a filler, the surface was uneven and the shape was also distorted, and it was confirmed that the original shape could not be maintained. In this way, it was confirmed that the thermal shrinkage could be reduced by blending diatomaceous earth as a filler, and that the effect of reducing thermal shrinkage was high by increasing the amount of filler blended.

[0043] In addition, the grinding ratio, which is expressed as the grinding volume / grinding wheel wear volume, was measured for each of these grinding wheels using a bench grinder. The grinding ratio is one of the indices for evaluating the sharpness of the grinding wheel, and it is said that the higher the value, the higher the grinding efficiency. The results are shown in the graph of FIG. 7. As shown in this figure, the grinding wheel according to Example 1 exhibited a grinding ratio of 7.6, which was higher than 3.3 for Comparative Example 1 and 5.3 for Comparative Example 2. In this way, it was confirmed that by using diatomaceous earth, an insoluble porous brittle material, as a filler, the grinding wheel strength is maintained while the grinding performance can be improved by the property of immediately collapsing during grinding and not interfering with grinding.

[0044] Furthermore, it was confirmed that the shape and grinding behavior of the grindstone can be stabilized by adjusting the amount of diatomaceous earth in the filler. In general, the greater the amount of thermal shrinkage during firing of the grindstone, the higher the density and the harder the grindstone acts. As a result, the amount of wear of the grindstone is reduced and the grinding ratio is increased. When the grinding ratio is large, a larger volume of substrate can be ground with less wear. In other words, the greater the amount of thermal shrinkage during firing of the grindstone, the higher the grinding performance, but when the amount of thermal shrinkage is large, the grindstone becomes distorted and the stability of the shape is reduced. In this embodiment, the amount of thermal shrinkage and density are adjusted by adjusting the amount of diatomaceous earth. In other words, by increasing the amount of diatomaceous earth, the amount of thermal shrinkage during firing of the grindstone is reduced and the density of the grindstone can be reduced. This makes it difficult for the grindstone to become glazing. Conversely, when the amount of diatomaceous earth is reduced, the amount of thermal shrinkage during firing of the grindstone is increased and the density of the grindstone is increased. This makes it easier for the grindstone to become glazing. In this way, there is a trade-off between the shrinkage of the grindstone and the grinding performance. This state is shown in FIG. 8 as a graph showing the relationship between the amount of filler blended, the grinding ratio, and the amount of thermal shrinkage. In FIG. 8, the vertical axis on the right (bold type) shows the amount of thermal shrinkage, and as shown by the thick line graph, the more the amount of filler blended, the better, that is, the smaller the amount of thermal shrinkage, and the state in which the shape of the grinding wheel is hardly changed by firing. However, in this state, the density of the grinding wheel is not dense, so the amount of wear during grinding increases. As a result, as shown by the thin line graph, the grinding ratio shown on the vertical axis on the left (thin type) decreases as the amount of filler blended increases. Conversely, as shown by the thick line graph, the less the amount of filler blended, the larger the amount of thermal shrinkage and the shape changes, but as shown by the thin line graph, the grinding ratio improves, the grinding wheel becomes harder, and the amount of wear decreases. In this way, since there is a trade-off between the shrinkage of the grinding wheel and the grinding performance, by adjusting the amount of filler blended, an appropriate harmony point that takes into account the balance between the amount of shrinkage of the grinding wheel and the grinding performance can be selected.

[0045] In addition, in the manufacturing process of the conventional grinding wheel, a removal process for removing the filler after firing was required. In contrast, in the grinding wheel according to the present embodiment, the filler is intentionally left to reduce thermal contraction during firing, making the removal process unnecessary. Specifically, in the grinding wheel according to Comparative Example 2, in the process after firing when a filler is used, as shown in FIG. 9A, the filler FL1 remains in the grinding wheel after firing, and the filler is removed as shown in FIG. 9B. As a result, pores AH are formed in the part where the filler is removed. In contrast, in the grinding wheel according to Example 1, the filler is not removed after firing, so that the filler FL2 remains in the grinding wheel as shown in FIG. 10. In this embodiment, the removal process can be made unnecessary by selecting in advance a filler whose physical properties do not cause problems even if it remains during grinding. This state will be explained using the graph in FIG. 11. In this figure, the horizontal axis shows the transition value of the z-axis of the grinding device, and the vertical axis shows the grinding resistance, and the lower the value, the higher the grinding performance. Generally, when the grinding wheel becomes clogged due to grinding, a new blade is used, which is called "self-sharpening," but the grinding wheel of Comparative Example 1 shows a large fluctuation in the grinding resistance value in the low z range, which shows that the self-sharpening is not working well and the workability is poor. In contrast, the grinding wheel of Example 1 shows a small fluctuation in the grinding resistance value, which shows that the self-sharpening effect is functioning and stable grinding is possible.

[0046] The present disclosure can also be implemented in the following manner.

[0047] [Section 1] A method for manufacturing a semiconductor device, comprising the steps of: providing a substrate; grinding the main surface of the substrate with a grindstone; Including, The grinding wheel includes abrasive grains, a binder, and a filler. The method for manufacturing a semiconductor device, wherein the filler comprises diatomaceous earth. This allows the filler to penetrate into the molten material that constitutes the interior and reduce shrinkage, resulting in a high-quality grinding wheel and improving the yield of the semiconductor device manufacturing method.

[0048] [Section 2] Item 1 is a method for producing a semiconductor device according to the present invention, A method for manufacturing a semiconductor element, wherein the filler is an insoluble porous brittle material. This allows the grinding wheel to maintain its strength while collapsing immediately during grinding, which can contribute to improved grinding performance.

[0049] [Section 3] Item 1 or 2, a method for producing a semiconductor device according to the present invention, The method for manufacturing a semiconductor element, wherein the diatomaceous earth has a plurality of pores smaller than the grain size of the abrasive grains. This allows the filler to reduce shrinkage when the grindstone is fired.

[0050] [Section 4] A method for producing a semiconductor device according to any one of items 1 to 3, The method for manufacturing a semiconductor device, wherein the substrate is sapphire.

[0051] [Section 5] A method for producing a semiconductor device according to any one of items 1 to 4, The semiconductor device is a light emitting diode.

[0052] [Section 6] A method for producing a semiconductor device according to any one of items 1 to 5, The method for manufacturing a semiconductor element, wherein the abrasive grains are diamond or cBN.

[0053] [Section 7] A grinding tool comprising a disk-shaped holding member and a plurality of grindstones arranged on a circumferential portion of the holding member, Each grinding wheel includes abrasive grains, a binder, and a filler. The grinding tool, wherein the filler comprises diatomaceous earth. With the above-mentioned configuration, the filler penetrates into the molten material that constitutes the interior and reduces shrinkage, thereby making it possible to obtain a high-quality grinding wheel and improve the yield of the manufacturing method of semiconductor elements.

[0054] [Section 8] A grinding wheel used in a grinding tool, The grinding wheel includes abrasive grains, a binder, and a filler. The grinding wheel, wherein the filler comprises diatomaceous earth.

[0055] [Section 9] A method for manufacturing a grindstone used in a method for manufacturing a semiconductor element, comprising the steps of: A process of preparing raw materials, such as abrasive grains, binders, fillers, and auxiliaries; mixing the raw materials; placing the mixed raw materials in a mold and molding them to obtain an intermediate body; calcining the intermediate; A method for manufacturing a grindstone comprising the steps of: The method for producing a grindstone, wherein the filler contains diatomaceous earth. This allows the filler to reduce shrinkage when the grindstone is fired.

[0056] [Section 10] Item 9. A method for producing a grindstone according to item 9, The method for producing a grinding wheel, wherein the raw material further includes a porous material. [Industrial Applicability]

[0057] The semiconductor element manufacturing method and manufacturing apparatus, grinding wheel and manufacturing method thereof according to the present disclosure can be suitably used as a grinding wheel for grinding difficult-to-process materials such as sapphire substrates. [Explanation of symbols]

[0058] 100...Grinding device 1...Chuck table 10...Grinding machine 11...Whetstone 12...Grinding tools 13...Retaining member 14...Whetstone rotating shaft 15...Groove 20...Machining fluid supply section 21. Tank 22...Machining fluid supply means ST…Substrate AB…processing fluid FL1, FL2...Filler AH…Stoma

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of: providing a substrate; grinding the main surface of the substrate with a grindstone; Including, The grinding wheel includes abrasive grains, a binder, and a filler. The method for manufacturing a semiconductor device, wherein the filler comprises diatomaceous earth.

2. 2. A method for manufacturing a semiconductor device according to claim 1, comprising the steps of: A method for manufacturing a semiconductor element, wherein the filler is an insoluble porous brittle material.

3. 2. A method for manufacturing a semiconductor device according to claim 1, comprising the steps of: The method for manufacturing a semiconductor element, wherein the diatomaceous earth has a plurality of pores smaller than the grain size of the abrasive grains.

4. A method for manufacturing a semiconductor device according to any one of claims 1 to 3, comprising the steps of: The method for manufacturing a semiconductor device, wherein the substrate is sapphire.

5. A method for manufacturing a semiconductor device according to any one of claims 1 to 3, comprising the steps of: The semiconductor device is a light emitting diode.

6. A method for manufacturing a semiconductor device according to any one of claims 1 to 3, comprising the steps of: The method for manufacturing a semiconductor device, wherein the abrasive grains are diamond or cBN.

7. A grinding tool comprising a disk-shaped holding member and a plurality of grindstones arranged on a circumferential portion of the holding member, Each grinding wheel includes abrasive grains, a binder, and a filler. The grinding tool, wherein the filler comprises diatomaceous earth.

8. A grinding wheel used in a grinding tool, The grinding wheel includes abrasive grains, a binder, and a filler. The grinding wheel, wherein the filler comprises diatomaceous earth.

9. A method for manufacturing a grindstone used in a method for manufacturing a semiconductor element, comprising the steps of: A process of preparing raw materials, such as abrasive grains, binders, fillers, and auxiliaries; mixing the raw materials; placing the mixed raw materials in a mold and molding them to obtain an intermediate body; calcining the intermediate; A method for manufacturing a grindstone comprising the steps of: The method for producing a grindstone, wherein the filler contains diatomaceous earth.

10. A method for manufacturing a grindstone according to claim 9, The method for producing a grinding wheel, wherein the raw material further includes a porous material.

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