Joining method
By pressurizing and irradiating microwaves on superposed aluminum and dissimilar materials, the method achieves full-surface bonding with a durable SiC compound layer, overcoming the limitations of point-line bonding in existing technologies.
Patent Information
- Application Number
- JP2023172501
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-10-04
- Publication Date
- 2025-04-16
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
Existing methods for joining different materials using high-energy beams are limited to bonding in points or lines, making it difficult to bond different materials over their entire surfaces.
A method involving the superposition of aluminum and dissimilar materials, pressurization, and irradiation with microwaves to form a compound layer at the bonding interface, using a bonding apparatus that includes a microwave oscillation source and a pressurizing body.
Enables the bonding of different materials over their entire surfaces, forming a durable compound layer like SiC, which is harder than Al4C3, at lower temperatures than traditional methods.
Smart Images

Figure 2025063381000001_ABST
Abstract
Description
[Technical field]
[0001] The present disclosure relates to a bonding method. [Background technology]
[0002] In recent years, techniques for joining different materials together have been developed. For example, Patent Document 1 discloses a technique in which, in a state in which different materials with different melting points are superimposed on each other, a high-energy beam is defocused and irradiated onto the side of the material with a higher melting point. [Prior art documents] [Patent documents]
[0003] [Patent Document 1] JP 2006-175503 A Summary of the Invention [Problem to be solved by the invention]
[0004] The inventors have found the following problems regarding the joining method. When a high-energy beam is irradiated onto a material, the irradiated area is limited, and the bonding is done in points or lines, making it difficult to bond different materials over their entire surfaces.
[0005] The present disclosure has been made in consideration of such problems, and has an object to provide a joining method capable of joining different materials together over their entire surfaces. [Means for solving the problem]
[0006] One aspect of the present invention for achieving the above object is to A method for joining an aluminum material to a dissimilar material, comprising the steps of: The aluminum material and the different material are superimposed on each other and irradiated with microwaves while being pressurized. Effect of the Invention
[0007] According to the present disclosure, it is possible to provide a joining method capable of joining different materials over their entire surfaces. [Brief description of the drawings]
[0008] [Figure 1] FIG. 1 is a schematic diagram showing a configuration of a joining device according to an embodiment. [Diagram 2] 1 is a cross-sectional image of a bonded product in the vicinity of the bonded interface. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or corresponding elements are denoted by the same reference numerals, and duplicated descriptions will be omitted as necessary for clarity of explanation.
[0010] First, the configuration of a bonding apparatus 100 according to this embodiment will be described with reference to Fig. 1. The bonding apparatus 100 is an apparatus for carrying out a bonding method according to this embodiment. As shown in Fig. 1, the bonding apparatus 100 includes at least a bonding chamber 10, a pressurizing body 20, and a microwave oscillation source 30, and may further include an inert gas source 40, a pedestal 50, a microwave absorber 60, and a microwave absorber 70. In addition to the bonding apparatus 100, an aluminum material 80 and a dissimilar material 90 are also illustrated in Fig. 1.
[0011] The bonding apparatus 100 is an apparatus for bonding an aluminum material 80 and a dissimilar material 90. The aluminum material 80 is aluminum (Al) or an aluminum alloy. The aluminum material 80 may further contain silicon (Si). Examples of aluminum alloys include ADC12 and Al-25mol%Si. The dissimilar material 90 is a material having a different composition from the aluminum material 80, such as a carbon material, a ceramic, and a metal. Examples of carbon materials include carbon fiber (CF), fullerene, and a graphite sheet. Examples of ceramics include silicon carbide (SiC). Examples of metals include titanium and iron. The shapes of the aluminum material 80 and the dissimilar material 90 are not particularly limited. The aluminum material 80 and the dissimilar material 90 may have a complex shape at the bonding interface.
[0012] The bonding chamber 10 has a space in which the aluminum material 80 and the dissimilar material 90 can be placed. The aluminum material 80 and the dissimilar material 90 are placed in the bonding chamber 10 in a stacked state, and are pressed using a pressurizing body 20. The pressurizing body 20 is a member that pressurizes the aluminum material 80 and the dissimilar material 90, and is, for example, a hand press, a weight, a vice, etc. By applying pressure using the pressurizing body 20, the time required to bond the aluminum material 80 and the dissimilar material 90 is shortened. In addition, by applying pressure using the pressurizing body 20, the degree of sealing between the aluminum material 80 and the dissimilar material 90 during bonding can be increased. A microwave oscillation source 30 is attached to the bonding chamber 10. The microwave oscillation source 30 irradiates microwaves to the aluminum material 80 and the dissimilar material 90 placed in the bonding chamber 10. Microwaves are radio waves with a frequency of 300 MHz to 300 GHz.
[0013] In the bonding method according to this embodiment, first, an aluminum material 80 and a dissimilar material 90 are placed in a superimposed state in a bonding chamber 10. Next, the aluminum material 80 and the dissimilar material 90 are pressurized using a pressurizing body 20, while microwaves are irradiated to the aluminum material 80 and the dissimilar material 90 using a microwave oscillation source 30. By irradiating microwaves while applying pressure to the aluminum material 80 and the dissimilar material 90, a compound is formed at the bonding interface, and the aluminum material 80 and the dissimilar material 90 are bonded over the entire surfaces.
[0014] The bonding apparatus 100 may include a member for preventing oxidation of the aluminum material 80 and the dissimilar material 90. For example, the bonding apparatus 100 may include an inert gas source 40. As shown in FIG. 1, the inert gas source 40 is attached to the bonding chamber 10. The inert gas source 40 introduces an inert gas into the bonding chamber 10. Examples of the inert gas include argon gas and nitrogen gas. When the inert gas is introduced into the bonding chamber 10 during pressurization and heating, oxidation of the aluminum material 80 and the dissimilar material 90 is suppressed. Therefore, the bonding property and adhesion are improved, and the material properties are maintained.
[0015] In addition, as a method for preventing oxidation of the aluminum material 80 and the dissimilar material 90, in addition to the introduction of an inert gas, a reducing agent and a microwave-transmitting material can be provided. Examples of the reducing agent include carbon materials such as carbon fiber, fullerene, and graphite sheet. Examples of the microwave-transmitting material include alumina fibrous insulation. The alumina fibrous insulation can suppress spark generation from the aluminum material 80 while transmitting microwaves. The bonding apparatus 100 may have a reducing agent or a microwave-transmitting material provided in the bonding chamber 10 instead of the inert gas source 40. In addition to the inert gas source 40, the bonding apparatus 100 may have at least one of a reducing agent and a microwave-transmitting material provided in the bonding chamber 10.
[0016] The bonding device 100 may include a pedestal 50. The pedestal 50 is a member on which the aluminum material 80 and the dissimilar material 90 are placed. The pedestal 50 is made of, for example, ceramic. The bonding device 100 may include a microwave absorber 60 and a microwave absorber 70. The microwave absorbers 60, 70 are members made of carbon materials such as carbon fiber, fullerene, and graphite sheet, or silicon carbide (SiC), etc. The microwave absorber 60 is a cylindrical member, and the pedestal 50, the aluminum material 80, and the dissimilar material 90 are placed inside the cylinder. The microwave absorber 60 may be, for example, a graphite body coated with SiC, etc.
[0017] The microwave absorber 70 is placed on the upper surface of the dissimilar material 90. The microwave absorber 70 may be in a powder or cotton-like form. When the microwave absorber 70 is in a powder form, the adhesion between the dissimilar material 90 and the microwave absorber 70 is increased, and pressure is applied evenly. When the microwave absorber 70 is in a cotton-like form, the microwave absorber 70 is easily removed after bonding. As shown in FIG. 1, the upper and side surfaces of the aluminum material 80 and the dissimilar material 90 are surrounded by the microwave absorbers 60 and 70. The microwave absorbers 60 and 70 increase in temperature by absorbing microwaves, and promote heating of the aluminum material 80 and the dissimilar material 90 during bonding. In addition, the microwave absorbers 60 and 70 suppress spark generation from the aluminum material 80 during microwave irradiation.
[0018] The bonding device 100 may include a heat insulating material (not shown) instead of the microwave absorber 70. The heat insulating material is, for example, an alumina fibrous heat insulating material. The alumina fibrous heat insulating material can suppress sparks generated from the aluminum material 80 while transmitting microwaves.
[0019] The present disclosure is not limited to the above-mentioned embodiment, and can be modified as appropriate without departing from the spirit of the present disclosure. For example, the joining method according to the present disclosure may be performed by placing a microwave absorber and a reflector in the interior of a microwave oven, and placing an aluminum material, a different material, and a pressurizing body in the microwave absorber. The reflector is, for example, an aluminum member coated with a paint containing a Si resin. EXAMPLES
[0020] Next, an embodiment of the present invention will be described. In Example 1, Al-25mol%Si was used as the aluminum material 80, and a graphite sheet was used as the dissimilar material 90. A ceramic plate was used as the base 50. A hand press was used as the pressurizing body 20. The microwaves oscillated from the microwave oscillation source 30 were 2.45GHz. A sample according to Example 1 was produced by heating at 450°C for 10 minutes with a pressurizing pressure of 200kPa.
[0021] In Example 2, ADC12 was used as the aluminum material 80, and a graphite sheet was used as the dissimilar material 90. A ceramic plate was used as the base 50. A hand press was used as the pressurizing body 20. The microwaves oscillated from the microwave oscillation source 30 were 2.45 GHz. A sample according to Example 2 was produced by heating at 450°C for 15 minutes with a pressurizing pressure of 200 kPa.
[0022] In both samples according to Examples 1 and 2, the members were satisfactorily joined to each other. Fig. 2 shows a photographed image of a cut surface in the vicinity of the bonded interface of the sample according to Example 1. As shown in Fig. 2, in the sample according to Example 1, a SiC compound layer of about 40 µm was formed.
[0023] When the aluminum material 80 and the dissimilar material 90 are joined by heating only, they are heated to, for example, 1000°C or higher. In this case, a compound layer of Al4C3 or the like is formed at the joining interface. In Examples 1 and 2, the aluminum material 80 and the dissimilar material 90 could be joined by heating at 450°C, which is lower than the melting temperature of aluminum, 650°C. In addition, in Examples 1 and 2, a compound layer containing SiC, which is harder than Al4C3, was formed. [Explanation of symbols]
[0024] 10 Junction chamber 20 Pressurized body 30 Microwave Source 40 Inert Gas Source 50 Pedestal 60 Microwave absorber 70 Microwave absorber 80 Aluminum Material 90 Different materials 100 Joining equipment
Claims
1. A method for joining an aluminum material to a dissimilar material, comprising the steps of: The aluminum material and the different material are overlapped with each other, and then irradiated with microwaves while applying pressure. Joining method.
2. The aluminum material and the different material are overlapped and surrounded by a microwave absorber, and then microwaves are irradiated while applying pressure. The joining method according to claim 1 .
3. The bonding method according to claim 1 or 2, wherein the aluminum material contains Si.
4. The bonding method according to claim 1 , wherein the different materials contain C.
5. 3. The bonding method according to claim 1, wherein the heating temperature is 1000° C. or less.
Citation Information
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