Substrate processing method and substrate processing apparatus

Abstract

To detect the positional deviation of a substrate prior to substrate processing.SOLUTION: A substrate processing apparatus processing a substrate comprises: a chamber that air-tightly accommodates the substrate; at least one mounting table that supports the substrate in the chamber; an electrostatic chuck that is provided on the mounting table, and includes a first substrate support area as a normal position where the substrate is supported, and a second substrate support area as a peripheral area surrounding the first substrate support area in plan view; and a circumference gas supply unit that includes a gas hole provided in the second substrate support area, a gas channel connected to the gas hole, a gas source supplying the gas to the gas hole through the gas channel, and a gas detection unit that detects the flow rate or pressure of the gas in the gas channel.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a device that includes a misalignment detection protrusion that protrudes higher than the substrate holding surface and a pressure measurement means that measures the pressure in the gas flow path, and when a substrate is held on the mounting table, detects the amount of gas leakage from a gas hole based on the detected pressure from the pressure measurement means, and detects whether or not the substrate has misaligned by more than a predetermined misalignment tolerance based on the detection result. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2008-172170 A Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure detects the positional deviation of a substrate prior to substrate processing. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, the apparatus comprising: a chamber for airtightly accommodating the substrate; at least one mounting table for supporting the substrate within the chamber; an electrostatic chuck including a first substrate support region provided on the mounting table as a normal position where the substrate is supported; and a second substrate support region as a peripheral region surrounding the first substrate support region in a planar view; and a peripheral gas supply unit including a gas hole provided in the second substrate support region, a gas flow path connected to the gas hole, a gas source for supplying the gas to the gas hole via the gas flow path, and a gas detection unit for detecting a flow rate or pressure of the gas in the gas flow path. Effect of the Invention

[0006] According to the present disclosure, it is possible to detect the positional deviation of a substrate prior to substrate processing. [Brief description of the drawings]

[0007] [Figure 1] 1 is a vertical sectional view showing an outline of a configuration of a substrate processing apparatus according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a perspective view showing an outline of a configuration of a partition wall according to the present embodiment. [Diagram 3] 1 is a vertical cross-sectional view showing an outline of an example of a state of a substrate processing apparatus according to an embodiment of the present invention; [Figure 4] 1 is a vertical cross-sectional view showing an outline of a configuration of a mounting table according to an embodiment of the present invention. [Diagram 5] 1 is a plan view showing the outline of a configuration of a mounting table according to an embodiment of the present invention, as viewed from above. [Figure 6] 4 is a vertical cross-sectional view showing an example of a state in which a substrate is placed on a placement table. FIG. [Figure 7] 1 is a plan view seen from above showing an example of a state in which a substrate is placed on a placement table. FIG. [Figure 8] 11 is a vertical cross-sectional view showing an example of a state when a partition wall is raised in the substrate processing apparatus; FIG. [Figure 9] FIG. 13 is a plan view showing an outline of the configuration of a mounting table according to a modified example. [Figure 10] 1 is a flowchart showing an outline of the configuration of a substrate processing method according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] In the manufacturing process of semiconductor devices, various processing steps are performed in which a processing module containing semiconductor wafers (hereinafter referred to as "substrates") is decompressed and predetermined processing is performed on the substrate. Furthermore, these multiple processing steps are performed using a substrate processing apparatus having multiple processing modules arranged around a common transfer module, for example.

[0009] In the substrate processing apparatus, the above-mentioned predetermined processing is performed with the substrate placed on a substrate support part such as an electrostatic chuck, etc. The substrate support part holds the substrate at a desired position and detects positional deviation on the substrate support surface.

[0010] Patent document 1 discloses that the presence or absence of misalignment of the substrate is detected by providing a misalignment detection protrusion that protrudes higher than the substrate support surface, and a pressure measurement means that measures the pressure in the gas flow path between the substrate support part and the rear surface of the substrate.

[0011] However, there are cases where the gas for detecting misalignment must be supplied to the rear surface of the substrate after the substrate is attracted by the electrostatic chuck, which is immediately before the start of processing. In such cases, the misalignment detection described in Patent Document 1 cannot be performed during the period from when the substrate is placed on the substrate support surface to immediately before the start of processing. During this period, some kind of malfunction may occur due to misalignment of the substrate, and there is room for improvement in detecting misalignment of the substrate.

[0012] Incidentally, the above-mentioned predetermined process performed in the substrate processing apparatus can be exemplified by COR (Chemical Oxide Removal) process. The COR process is a process in which processing gases are supplied to the substrate in a processing vessel held in vacuum, and the gases react with, for example, a film formed on the substrate to generate a product. The product generated on the substrate surface by the COR process is sublimated by a heat treatment in the next process, and the film on the substrate surface is thereby removed.

[0013] In a substrate processing apparatus for performing COR processing, a partition wall capable of being raised and lowered is provided to separate the inside of the processing vessel into a processing space and an exhaust space in order to prevent the flow of processing gas from becoming uneven on the surfaces of multiple substrates, for example, two substrates. Such a partition wall is provided near the outer periphery of the substrate support part, and is raised from a retreated position during the period from when the substrate is placed on the substrate support surface until the processing starts. During this raising, if the substrate is misaligned on the substrate support surface, the rising partition wall may come into contact with the substrate. This contact may cause problems such as damage to the substrate and contamination of the inside of the processing apparatus including the partition wall. However, the above-mentioned Patent Document 1 does not take into consideration detection of the substrate misalignment when the partition wall is raised and lowered.

[0014] In view of this, the technology disclosed herein detects the positional deviation of a substrate prior to substrate processing. Specifically, it is possible to detect the positional deviation of a substrate during the period from when the substrate is placed on a substrate support surface until when substrate processing begins.

[0015] Hereinafter, the configuration of the substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configurations are denoted by the same reference numerals, and redundant description will be omitted.

[0016] <Substrate processing equipment> 1 is a schematic longitudinal sectional view of a substrate processing apparatus 1 according to the present embodiment. In the present embodiment, the substrate processing apparatus 1 is a COR processing apparatus that performs COR processing on a substrate W, for example.

[0017] As shown in FIG. 1, the substrate processing apparatus 1 includes an airtight chamber 10, a plurality of mounting tables 11, 12 (two in this embodiment) on which substrates W are placed within the chamber 10, a shower head 13 as a processing gas supply section that supplies processing gas to the mounting tables 11, 12 from above the mounting tables 11, 12, a partition wall 14 that can be raised and lowered and surrounds the outside of each of the mounting tables 11, 12, inner walls 15, 15 fixed to the bottom of the chamber 10 and individually surround the outside of each of the mounting tables 11, 12, and a lifting mechanism 16 that raises and lowers the partition wall 14.

[0018] The chamber 10 is a container made of a metal such as aluminum or stainless steel and has, for example, a substantially rectangular parallelepiped shape as a whole. The chamber 10 has a cylindrical sidewall 20 that is, for example, substantially rectangular in shape when viewed from above and has open upper and lower surfaces, a ceiling plate 21 that airtightly covers the upper surface of the sidewall 20, and a bottom plate 22 that covers the lower surface of the sidewall 20. A sealing member (not shown) that keeps the inside of the chamber 10 airtight is provided between the upper end surface of the sidewall 20 and the ceiling plate 21.

[0019] The mounting tables 11 and 12 are formed in a substantially cylindrical shape, and each of them has an upper stage 11a, 12a having a mounting surface on which the substrate W is mounted, and a lower stage 11b, 12b fixed to a bottom plate 22 and supporting the upper stages 11a, 12a. The upper stages 11a, 12a each have a built-in temperature adjustment mechanism 30 for adjusting the temperature of the substrate W. The temperature adjustment mechanism 30 adjusts the temperature of the mounting table 11 by circulating a coolant such as water, and forms a flow path for controlling the temperature of the substrate W on the mounting table 11. The detailed configuration of the mounting tables 11 and 12 will be described later. Note that the mounting tables 11 and 12 have the same configuration as described above, and unless otherwise specified below, the description of the mounting table 11 also applies to the mounting table 12, so the description of the mounting table 12 will be omitted.

[0020] In addition, a support pin unit (not shown) is provided at a position below the mounting table 11 on the bottom plate 22, and is configured to be able to transfer the substrate W between the bottom plate 22 and a transport mechanism (not shown) provided outside the substrate processing apparatus 1.

[0021] The shower head 13 is provided on the lower surface of the ceiling plate 21 of the chamber 10, facing the mounting table 11 and the mounting table 12, respectively. The shower head 13 has, for example, a substantially cylindrical frame 31 with an open lower surface supported by the lower surface of the ceiling plate 21, and a substantially disk-shaped shower plate 32 fitted into the inner surface of the frame 31. The shower plate 32 is provided at a predetermined distance from the ceiling part of the frame 31. As a result, a space 13a is formed between the ceiling part of the frame 31 and the upper surface of the shower plate 32. The shower plate 32 has a plurality of openings 32a penetrating the shower plate 32 in the thickness direction.

[0022] A gas supply source 34 is connected to the space 13a between the ceiling of the frame 31 and the shower plate 32 via a gas supply pipe 33. The gas supply source 34 is configured to be able to supply, for example, hydrogen fluoride (HF) gas or ammonia (NH3) gas as a processing gas. Therefore, the processing gas supplied from the gas supply source 34 is supplied to the substrates W placed on the mounting tables 11 and 12 through the space 13a and the shower plate 32. In addition, the gas supply pipe 33 is provided with a flow rate adjustment mechanism 35 that adjusts the supply amount of the processing gas, so that the amount of the processing gas supplied to each substrate W can be individually controlled. The shower head 13 may be, for example, a post-mix type that can individually supply multiple types of processing gas without mixing them.

[0023] 2, the partition wall 14 has two cylindrical portions 40, 40 that individually surround the two mounting tables 11, 12, a flange portion 41 provided at the upper ends of the cylindrical portions 40, 40, and an inner flange portion 42 provided at the lower ends of the cylindrical portions 40, 40. The inner diameter of the cylindrical portion 40 is set to be larger than the outer surface of the mounting table 11, so that a gap is formed between the cylindrical portion 40 and the mounting table 11.

[0024] 1, a seal member 43 such as an O-ring is provided on the upper surface of the flange portion 41. The seal member 43 airtightly seals the gap between the flange portion 41 and the frame 31 when the elevating mechanism 16 raises the partition wall 14 to bring the flange portion 41 and the frame 31 into contact with each other. The seal member 43 is provided on each of the mounting tables 11 and 12. Then, the partition wall 14 is raised to bring the frame 31 into contact with the seal member 43, thereby forming a processing space S surrounded by the mounting table 11, the partition wall 14, and the shower head 13.

[0025] 3, the height of the partition 14 is set so that, for example, when the partition 14 is lowered by the lifting mechanism 16, the upper surface of the flange portion 41 is located lower than the upper surface of the mounting table 11. This allows the partition 14 to be lowered to access the substrate W from outside the chamber 10. Note that the position where the flange portion 41 of the partition 14 abuts against the frame 31 (where the processing space S is formed) is sometimes referred to as the "substrate processing position", and the position where the partition 14 is lowered until it abuts against the bottom plate 22 or near the bottom plate 22 is sometimes referred to as the "retracted position". Note that FIG. 1 illustrates a state where the partition 14 is at the substrate processing position, and FIG. 3 illustrates a state where the partition 14 is at the retracted position.

[0026] The inner wall 15 has a substantially cylindrical main body 15a and a flange 15b provided at the upper end of the main body 15a and protruding horizontally toward the outer periphery of the inner wall 15. As shown in Fig. 1, for example, the inner wall 15 is disposed so as to surround the lower bases 11b and 12b of the mounting tables 11 and 12, respectively. The inner diameter of the main body 15a of the inner wall 15 is set to be larger than the outer diameters of the lower bases 11b and 12b, and exhaust spaces V are formed between the inner wall 15 and the lower bases 11b and 12b, respectively.

[0027] 1, a seal member 44 such as an O-ring is provided on the lower surface of the flange portion 15b. The seal member 44 airtightly seals the gap between the flange portion 15b and the inner flange portion 42 of the partition wall 14 when the partition wall 14 is raised by the lifting mechanism 16 so that the flange portion 15b and the inner flange portion 42 of the partition wall 14 come into contact with each other.

[0028] The lifting mechanism 16 that lifts and lowers the partition wall 14 includes an actuator 50 arranged outside the chamber 10, a drive shaft 51 connected to the actuator 50, penetrating the bottom plate 22 of the chamber 10 and extending vertically upward within the chamber 10, and a number of guide shafts 52 whose tips are connected to the partition wall 14 and whose other ends extend to the outside of the chamber 10. The guide shafts 52 prevent the partition wall 14 from tilting when the partition wall 14 is lifted and lowered by the drive shaft 51.

[0029] The lower end of an expandable bellows 60 is airtightly connected to the drive shaft 51. The upper end of the bellows 60 is airtightly connected to the lower surface of the bottom plate 22. Therefore, when the drive shaft 51 moves up and down, the bellows 60 expands and contracts in the vertical direction, thereby maintaining the inside of the chamber 10 airtight. Note that a sleeve (not shown) fixed to the bottom plate 22, for example, is provided between the drive shaft 51 and the bellows 60 to function as a guide during the lifting and lowering operation.

[0030] A bellows 61, which is expandable and contractable like the drive shaft 51, is connected to the guide shaft 52. The upper end of the bellows 61 straddles the bottom plate 22 and the side wall 20 and is airtightly connected to both. Therefore, when the guide shaft 52 moves up and down in conjunction with the lifting and lowering operation of the partition wall 14 by the drive shaft 51, the bellows 61 expands and contracts in the vertical direction, thereby maintaining the inside of the chamber 10 airtight. Note that, like the drive shaft 51, a sleeve (not shown) is provided between the guide shaft 52 and the bellows 61 to function as a guide during the lifting and lowering operation.

[0031] In addition, since the upper end of the bellows 61 is the fixed end and the lower end of the bellows 61 connected to the guide shaft 52 is the free end, when the pressure inside the chamber 10 becomes negative, a force compressing the bellows 61 in the vertical direction acts due to the pressure difference between the inside and outside of the bellows 61. Therefore, the guide shaft 52 connected to the free end of the bellows 61 rises vertically upward as the bellows 61 contracts. This makes it possible to ensure sealing between the partition wall 14 and the frame body 31 by evenly raising the partition wall 14 and appropriately contacting the seal member 43 with the frame body 31. Note that a force pressing the guide shaft 52 downward acts on the guide shaft 52 due to a reaction force from the bellows 61 as an elastic member and the weight of the guide shaft 52 itself, but the pressure difference acting on the guide shaft 52 can be adjusted by appropriately setting the diameter of the bellows 61.

[0032] An exhaust mechanism 70 that exhausts the inside of the chamber 10 is connected via an exhaust pipe 71 to the bottom plate 22 of the chamber 10, outside the inner wall 15. The exhaust pipe 71 is provided with an adjustment valve 72 that adjusts the amount of exhaust by the exhaust mechanism 70. In addition, the bottom plate 22 is provided with a pressure measurement mechanism (not shown) for measuring the pressure in each of the processing spaces S of the mounting tables 11 and 12. The opening degree of the adjustment valve 72 is controlled, for example, based on a value measured by this pressure measurement mechanism.

[0033] The substrate processing apparatus 1 described above is provided with a control unit 90 as shown in FIG. 1. The control unit 90 processes computer-executable instructions that cause the substrate processing apparatus 1 to execute various steps described in the present disclosure. The control unit 90 may be configured to control each element of the substrate processing apparatus 1 to execute various steps described herein. In an embodiment, a part or all of the control unit 90 may be included in the substrate processing apparatus 1. The control unit 90 may include a processing unit, a storage unit, and a communication interface. The control unit 90 is realized, for example, by a computer. The processing unit may be configured to perform various control operations by reading a program from the storage unit and executing the read program. This program may be stored in the storage unit in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit, and is read from the storage unit by the processing unit and executed. The medium may be various computer-readable storage media, or may be a communication line connected to the communication interface. The processing unit may be a CPU (Central Processing Unit). The storage unit may be temporary or non-temporary and may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the substrate processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0034] <Placement table> Next, the details of the mounting tables 11 and 12 in the substrate processing apparatus 1 according to this embodiment will be described with reference to Fig. 4. Fig. 4 is a vertical cross-sectional view showing an outline of the configuration of the mounting table 11 according to this embodiment. Fig. 4 shows only a part of the substrate processing apparatus 1 for explaining the outline of the configuration of the mounting table 11, and omits illustration of other parts. In the following explanation, the mounting table 11 will be described as a representative, but the same applies to the mounting table 12.

[0035] The upper table 11a of the mounting table 11 includes a base 101 and an electrostatic chuck 102. The base 101 includes a conductive member. The conductive member of the base 101 can function as a lower electrode. The electrostatic chuck 102 is disposed on the base 101. The electrostatic chuck 102 includes a ceramic member 102a and an electrostatic electrode (not shown) disposed within the ceramic member 102a. The ceramic member 102a has a first substrate support region 111 and a second substrate support region 112 as a peripheral region surrounding the first substrate support region 111 in a plan view. Here, the "substrate support region" including the first substrate support region 111 and the second substrate support region 112 means a region where the substrate W may be supported in contact with the electrostatic chuck 102 when the substrate W is placed on the electrostatic chuck 102, but does not necessarily mean a region where the substrate W is supported in contact with the electrostatic chuck 102. Note that another member surrounding the electrostatic chuck 102 may have the second substrate support region 112.

[0036] The first substrate support region 111 according to the present embodiment is a region that comes into contact with the substrate W when the substrate W is attracted and supported by the electrostatic chuck 102 at a normal position on the mounting table 11, and occupies a similar circular region for a circular substrate W. In other words, the first substrate support region 111 is a region serving as a normal position at which the substrate W is supported. The second substrate support region 112 according to the present embodiment is an annular region that surrounds the circular first substrate support region 111 in a plan view. The "normal position" refers to a position that is predetermined by the design of the electrostatic chuck 102 or the processing in the substrate processing apparatus 1, and includes a position that is deviated from the predetermined position due to an allowable error.

[0037] In one embodiment, the mounting table 11 includes a backside gas supply unit configured to supply a heat transfer gas to a gap 113 between the backside of the substrate W and the first substrate support region 111. The backside gas supply unit includes a backside gas passage 114 connected to the gap 113, a gas source 115 that supplies a heat transfer gas to the gap 113 via the backside gas passage 114, and a flow rate controller 116 that adjusts the flow rate of the gas supplied from the gas source 115. In one embodiment, the backside gas supply unit supplies the heat transfer gas to the gap 113 between the backside of the substrate W and the first substrate support region 111 while the substrate W is attracted and supported by the electrostatic chuck 102.

[0038] The mounting table 11 includes a peripheral gas supply unit configured to supply gas to gas holes 120 formed in the second substrate support region 112. The peripheral gas supply unit includes the gas holes 120, a peripheral gas flow path 121 connected to the gas holes 120, a gas source 115 that supplies gas to the gas holes 120 via the peripheral gas flow path 121, and a flow rate controller 122 as a gas regulator that adjusts the flow rate of gas supplied from the gas source 115. In this embodiment, the gas source 115 is shared by the backside gas supply unit and the peripheral gas supply unit.

[0039] The flow rate controllers 116 and 122 according to the present embodiment include a pressure gauge as a gas detector. The flow rate controllers 116 and 122 may be, for example, a mass flow controller or a pressure control type flow rate controller.

[0040] In one embodiment, the gas supplied from the gas source 115 is controlled in flow rate by a flow rate controller 122 and supplied to the gas hole 120 via the peripheral gas passage 121. The gas that reaches the gas hole 120 is discharged into the processing space S.

[0041] 5 is a plan view showing an outline of the configuration of the mounting table 11 according to this embodiment. As shown by the thickest shading in FIG. 5, the gas hole 120 according to this embodiment is provided to extend in an annular shape in the second substrate support region 112. In addition, three peripheral gas flow paths 121 are provided for the gas hole 120, which are arranged at positions that are rotationally symmetrical in plan view. The three peripheral gas flow paths 121 join together near the center of the mounting table 11 and are connected to the gas source 115. The flow rate controller 122 is provided at the joining portion of the peripheral gas flow paths 121.

[0042] 4 and 5, the gas holes 120 are illustrated at positions radially spaced apart from the first substrate support region 111 in the second substrate support region 112, but are not limited to such an example. In one embodiment, the gas holes 120 are provided in an annular shape such that the inner edge of the gas holes 120 contacts the outer edge of the first substrate support region 111 in the second substrate support region 112.

[0043] 4 and 5, three peripheral gas flow paths 121 are provided radially, but the present invention is not limited to such an example. As long as the gas supplied from the gas source 115 can flow through the gas holes 120, the peripheral gas flow paths 121 can be provided in any desired number and arrangement.

[0044] Furthermore, the peripheral gas supply unit according to the present embodiment includes a pressure gauge provided in the flow rate controller 122 as a gas detector, but is not limited to this example. In one embodiment, the peripheral gas supply unit includes a desired flow meter or pressure gauge as a gas detector in the peripheral gas flow path 121. The flow meter or pressure gauge is configured to be able to detect the flow rate or pressure value of the gas in the peripheral gas flow path 121.

[0045] In the mounting table 11 according to the present embodiment, the gas holes 120 are provided in the second substrate support region 112, and therefore do not overlap with the substrate W normally placed on the first substrate support region 111 in a plan view.

[0046] On the other hand, in one example state, the substrate W may not be placed correctly in the first substrate support region 111, but may be placed protruding into the second substrate support region 112. Figures 6 and 7 are a vertical cross-sectional view and a plan view showing an example state in which the substrate W is placed protruding into the second substrate support region 112. This state in which the substrate W is not placed correctly in the first substrate support region 111, but may be placed protruding into the second substrate support region 112, is referred to as a state in which "substrate misalignment" has occurred.

[0047] When the substrate is misaligned, as shown in FIGS. 6 and 7, at least a part of the substrate W overlaps with the gas hole 120 in a plan view. In this case, the overlapping portion prevents the gas from being discharged from the gas hole 120 to the processing space S. When the gas is prevented from being discharged from the gas hole 120 to the processing space S, the gas flow rate in the peripheral gas flow passage 121 decreases or the gas pressure increases. In one embodiment, the flow rate controller 122 executes feedback control so that the gas flow rate in the peripheral gas flow passage 121 becomes the planned flow rate value of the control target. Therefore, when the gas is prevented from being discharged from the gas hole 120 to the processing space S, feedback control is executed so that the gas flow rate in the peripheral gas flow passage 121 does not decrease, and as a result, the gas pressure in the peripheral gas flow passage 121 increases.

[0048] 6 and 7, the substrate W may overlap with the partition wall 14 in a plan view. In this case, as shown in Fig. 8, when the partition wall 14 is raised from the retracted position to the substrate processing position in the direction of the thick arrow, the substrate W may come into contact with the partition wall 14 at a position C where the substrate W and the partition wall 14 overlap in a plan view. If the substrate W comes into contact with the partition wall 14, this may cause problems such as damage to the substrate W or contamination of the inside of the processing apparatus including the partition wall 14.

[0049] <Modifications of the mounting table> A mounting table 200 according to a modified example of this embodiment will be described with reference to Fig. 9. Fig. 9 is a plan view showing an outline of the configuration of the mounting table 200 according to the modified example of this embodiment. In this modified example, three gas holes 201 are provided at positions that are rotationally symmetrical about the center of the mounting table 200 and are scattered in the second substrate support region 112. Peripheral gas flow paths 202 are connected to the three gas holes 201, respectively. The three peripheral gas flow paths 202 join together near the center of the mounting table 200 and are connected to the gas source 115.

[0050] In this modification, a gas detector is provided in each of the peripheral gas flow passages 202 connected to the three gas holes 201. The gas detector is a desired flow rate controller. In another embodiment, the gas detector is a flow meter or a pressure meter configured to detect a flow rate or pressure value of the gas in each of the peripheral gas flow passages 202.

[0051] In this modification, the number of gas holes 201 is three, but is not limited to this. In addition, the arrangement of the gas holes 201 is not limited to the example shown in the figure, and the arrangement can be any desired arrangement in light of the number of gas holes 201.

[0052] <Substrate processing method> A substrate processing method according to this embodiment, which can be performed using the above-described substrate processing apparatus 1, will be described below with reference to Fig. 10. Fig. 10 is a flow chart showing an outline of the configuration of the substrate processing method according to this embodiment. The substrate processing method is configured to be capable of detecting positional deviation of the substrate during the period from when the substrate is placed on the substrate support surface until the start of substrate processing, and includes the following steps ST11 to ST23.

[0053] In step ST11, with the partition 14 in the retracted position, the substrate W is placed on the mounting table 11. As an example, the substrate W is introduced into the chamber 10 from outside the chamber 10 by a desired transfer device. In this case, the transfer device is controlled with the goal of placing the substrate W on the first substrate support region 111 of the electrostatic chuck 102.

[0054] In step ST12, the peripheral gas supply unit starts supplying gas to the gas holes 120. The gas supply is controlled by the flow rate controller 122 so as to achieve a desired planned flow rate value.

[0055] In step ST13, a pressure value of the gas is obtained by a pressure gauge serving as a gas detector provided in the flow rate controller 122, and the pressure value is compared with a planned pressure value. The planned pressure value may be obtained in advance and stored, and read in step ST13. As an example, the planned pressure value may be a pressure value obtained by the pressure gauge of the flow rate controller 122 when gas is supplied to the peripheral gas supply unit so as to achieve the planned flow rate value in a state in which the substrate W is not placed. The planned pressure value may include a desired error range including a measurement error.

[0056] In step ST14 according to one embodiment, if the pressure value in step ST13 is outside the range of expected pressure values, it is determined that the substrate W was not placed in the correct position on the mounting table 11, and positional deviation correction is performed. In step ST14, as an example, the positional deviation correction is performed by lifting the substrate W by a desired transport device, and determining the position where the substrate W should be placed while taking the positional deviation into consideration. After performing step ST14, the process returns to step ST11.

[0057] In another embodiment, if the pressure value in step ST13 is outside the range of expected pressure values, it is determined that the substrate W was not placed in a normal position on the mounting table 11, and the substrate processing method is terminated.

[0058] In step ST15, if the pressure value in step ST13 is within the range of the expected pressure value, it is determined that the substrate W is placed in a normal position on the mounting table 11, and the partition wall 14 is raised from the retreated position to the substrate processing position. In one embodiment, the pressure value is continuously detected even while the partition wall 14 is being raised in step ST15, and the positional deviation of the substrate is monitored in step ST13.

[0059] In step ST16, after the partition 14 reaches the substrate processing position, the supply of gas to the gas holes 120 in the peripheral gas supply unit is stopped.

[0060] In step ST17, the electrostatic chuck 102 starts electrostatically attracting the substrate W.

[0061] In step ST18, while the substrate W is attracted and supported by the electrostatic chuck 102, the backside gas supply unit starts to supply a heat transfer gas to the gap 113 between the backside of the substrate W and the first substrate support region 111.

[0062] In step ST19, the pressure value of the heat transfer gas supplied to the gap 113 between the back surface of the substrate W and the first substrate support region 111 in the back surface gas supply unit is acquired and compared with the planned pressure value of the heat transfer gas. In one embodiment, the pressure value of the heat transfer gas is acquired by a pressure gauge provided in the flow rate controller 116. Note that the determination of the planned pressure value of the heat transfer gas and the comparison of the pressure value of the heat transfer gas with the planned pressure value of the heat transfer gas may be performed by a known method. If the pressure value of the heat transfer gas in step ST19 is outside the range of the planned pressure values ​​of the heat transfer gas, it is determined that the substrate W was not placed in the normal position on the mounting table 11, and the substrate processing method is terminated.

[0063] In step ST20, if the pressure value of the heat transfer gas in step ST19 is within the range of the expected pressure value of the heat transfer gas, it is determined that the substrate W is placed in a normal position on the mounting table 11, and substrate processing is performed.

[0064] In step ST21, it is selected whether or not to continue the substrate processing based on a predetermined recipe, etc. If the substrate processing is to be continued, the process returns to step ST20. If the substrate processing is not to be continued, the process proceeds to step ST22.

[0065] In step ST22, the supply of the heat transfer gas to the gap 113 between the back surface of the substrate W and the first substrate support region 111 in the back surface gas supply unit is terminated.

[0066] In step ST23, the electrostatic attraction of the substrate W to the electrostatic chuck 102 is completed. After performing step ST23, the substrate processing method is completed.

[0067] The technical significance of the main steps in the substrate processing method according to this embodiment will be described below.

[0068] As described above, in the backside gas supply unit, the positional deviation of the substrate W can be detected in a state in which the substrate W is attracted and supported by the electrostatic chuck 102 (steps ST18 and ST19). On the other hand, during the period from when the substrate is placed on the mounting table 11 in step ST11 until when the substrate W is attracted and supported by the electrostatic chuck 102 in step ST17, the backside gas supply unit cannot detect the positional deviation of the substrate W. In particular, in step ST15, if the positional deviation of the substrate W cannot be detected when the partition wall 14 is raised, the substrate W may come into contact with the partition wall 14 at the position C where they overlap in a plan view, as described in FIG.

[0069] In contrast, in the substrate processing method according to the present embodiment, the peripheral gas supply unit is used to detect the positional deviation of the substrate W in steps ST12 to ST16. This makes it possible to detect the positional deviation of the substrate W before the partition wall 14 is raised in step ST15, and to correct the positional deviation of the substrate W in step ST14 or to terminate the subsequent steps. As a result, it is possible to avoid damage to the substrate W due to contact between the substrate W and the partition wall 14, contamination of the inside of the processing apparatus, and the like.

[0070] Hereinafter, a case will be described in which the substrate processing apparatus 1 including the mounting table 200 according to the modified example shown in FIG. 9 is used to determine the positional deviation of the substrate W in step ST13 and to correct the positional deviation in step ST14.

[0071] In step ST13, the gas flow rate or pressure is detected by each of the gas detectors in the three peripheral gas flow paths 202 provided in the mounting table 200. As an example, it is assumed that the flow rate or pressure value of one gas detector is outside the range of the planned flow rate or pressure value, and the flow rate or pressure values ​​of the other two gas detectors are within the range of the planned flow rate or pressure value. In this case, it can be determined that the substrate W overlaps with one gas hole 201 to which the peripheral gas flow path 202 in which the one gas detector is provided is connected in a plan view. At the same time, it can be determined that the substrate W does not overlap with the other two gas holes 201 to which the peripheral gas flow paths 202 in which the other two gas detectors are provided are connected.

[0072] In step ST14, the positional deviation correction is a correction to move the position of the substrate W in the opposite direction of the one gas hole 201 with which the substrate W is determined to overlap, toward the other two gas holes 201 with which the substrate W is determined to overlap.

[0073] By performing the positional deviation correction in steps ST13 and ST14 using the substrate processing apparatus 1 including the mounting table 200 according to the modified example shown in FIG. 9, the positional deviation of the substrate W can be corrected more appropriately.

[0074] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. From such an arbitrary combination, the actions and effects of each of the components in the combination can be obtained as a matter of course, and other actions and effects that are obvious to a person skilled in the art from the description of this specification can be obtained.

[0075] In addition, the effects described in this specification are merely explanatory or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to a person skilled in the art from the description of this specification in addition to or in place of the above effects.

[0076] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) A substrate processing apparatus for processing a substrate, a chamber for hermetically housing the substrate; at least one stage for supporting the substrate within the chamber; an electrostatic chuck provided on the mounting table, the electrostatic chuck including a first substrate support region serving as a normal position for supporting the substrate, and a second substrate support region serving as a peripheral region surrounding the first substrate support region in a plan view; a peripheral gas supply unit including a gas hole provided in the second substrate support region, a gas flow path connected to the gas hole, a gas source that supplies the gas to the gas hole via the gas flow path, and a gas detector that detects a flow rate or a pressure of the gas in the gas flow path; The substrate processing apparatus includes: (2) further comprising a control unit; The control unit is (a) starting the supply of the gas to the gas holes in the peripheral gas supply unit while the substrate is placed on the electrostatic chuck; (b) detecting a flow rate or pressure of the gas by the gas detection unit and comparing the value of the flow rate or pressure of the gas with a planned flow rate value or planned pressure value of the gas; (c) determining that the substrate is misaligned if the gas flow rate or pressure value is outside a range of a planned gas flow rate or pressure value; The substrate processing apparatus according to (1) above, (3) partition walls disposed within the chamber and surrounding the respective outer peripheries of the mounting stages at intervals; The substrate processing apparatus according to (1) or (2) above, further comprising: a lifting mechanism for lifting the partition between a retreated position and a substrate processing position. (4) The control unit further comprises: (d) when it is determined in the step (c) that the positional deviation of the substrate has occurred, correcting the positional deviation of the substrate before the partition wall is raised from the retreat position to the substrate processing position; The substrate processing apparatus according to (3) above, (5) The substrate processing apparatus according to any one of (1) to (4) above, wherein the gas hole is provided so as to extend in an annular shape in the second substrate support region. (6) The substrate processing apparatus according to any one of (1) to (5) above, wherein the gas holes are provided in a plurality of locations scattered in the second substrate support region. (7) The substrate processing apparatus according to (6), wherein the gas detection unit is provided in each of the flow paths connected to the gas holes, respectively. (8) The peripheral gas supply unit includes a gas adjusting unit that adjusts a flow rate or a pressure of the gas in the gas flow path, The substrate processing apparatus according to any one of (1) to (7) above, wherein the gas adjusting unit includes the gas detecting unit. (9) A substrate processing method for processing a substrate using a substrate processing apparatus, comprising the steps of: The substrate processing apparatus includes: a chamber for hermetically housing the substrate; at least one stage for supporting the substrate within the chamber; an electrostatic chuck provided on the mounting table, the electrostatic chuck including a first substrate support region serving as a normal position for supporting the substrate, and a second substrate support region serving as a peripheral region surrounding the first substrate support region in a plan view; a peripheral gas supply unit including a gas hole provided in the second substrate support region, a gas flow path connected to the gas hole, a gas source that supplies the gas to the gas hole via the gas flow path, and a gas detector that detects a flow rate or a pressure of the gas in the gas flow path; Equipped with The substrate processing method includes: (a) starting the supply of the gas to the gas holes in the peripheral gas supply unit while the substrate is placed on the electrostatic chuck; (b) detecting a flow rate or pressure of the gas by the gas detection unit and comparing the value of the flow rate or pressure of the gas with a planned flow rate value or planned pressure value of the gas; (c) determining that the substrate is misaligned if the gas flow rate or pressure value is outside a range of a planned gas flow rate or pressure value; A method for processing a substrate, comprising: [Explanation of symbols]

[0077] 1. Substrate Processing Equipment 10. Chamber 11 Placement table 102 Electrostatic Chuck 111 First board support area 112 Second board support area 120 Gas hole 121 Peripheral gas flow path 122 Flow Controller W substrate

Claims

1. A substrate processing apparatus for processing a substrate, a chamber for hermetically housing the substrate; at least one stage for supporting the substrate within the chamber; an electrostatic chuck provided on the mounting table, the electrostatic chuck including a first substrate support region serving as a normal position for supporting the substrate, and a second substrate support region serving as a peripheral region surrounding the first substrate support region in a plan view; a peripheral gas supply unit including a gas hole provided in the second substrate support region, a gas flow path connected to the gas hole, a gas source that supplies gas to the gas hole via the gas flow path, and a gas detector that detects a flow rate or a pressure of the gas in the gas flow path; The substrate processing apparatus includes:

2. A control unit is further provided. The control unit is (a) starting the supply of the gas to the gas hole in the peripheral gas supply unit while the substrate is placed on the electrostatic chuck; (b) detecting a flow rate or pressure of the gas by the gas detection unit and comparing the value of the flow rate or pressure of the gas with a planned flow rate value or a planned pressure value of the gas; (c) determining that the substrate is misaligned if the gas flow rate or pressure value is outside a range of a planned gas flow rate or pressure value; The substrate processing apparatus according to claim 1 , further comprising:

3. partitions disposed within the chamber and surrounding the respective mounting stages at intervals from the outer periphery of each mounting stage; The substrate processing apparatus according to claim 2 , further comprising a lifting mechanism for lifting the partition wall between a retracted position and a substrate processing position.

4. The control unit further includes: (d) when it is determined in the (c) step that a positional deviation of the substrate has occurred, correcting the positional deviation of the substrate before the partition wall is raised from the retreat position to the substrate processing position; The substrate processing apparatus according to claim 3 , further comprising:

5. The substrate processing apparatus according to claim 1, wherein the gas hole is provided so as to extend in an annular shape in the second substrate supporting region.

6. The substrate processing apparatus according to claim 1, wherein a plurality of the gas holes are provided at different locations in the second substrate supporting region.

7. The substrate processing apparatus according to claim 6 , wherein the gas detector is provided in each of the gas flow paths connected to the gas holes, respectively.

8. the peripheral gas supply unit includes a gas adjusting unit that adjusts a flow rate or a pressure of the gas in the gas flow path, 5. The substrate processing apparatus according to claim 1, wherein the gas regulator includes the gas detector.

9. A substrate processing method for processing a substrate using a substrate processing apparatus, comprising: The substrate processing apparatus includes: a chamber for hermetically housing the substrate; at least one stage for supporting the substrate within the chamber; an electrostatic chuck provided on the mounting table, the electrostatic chuck including a first substrate support region serving as a normal position for supporting the substrate, and a second substrate support region serving as a peripheral region surrounding the first substrate support region in a plan view; a peripheral gas supply unit including a gas hole provided in the second substrate support region, a gas flow path connected to the gas hole, a gas source that supplies gas to the gas hole via the gas flow path, and a gas detector that detects a flow rate or a pressure of the gas in the gas flow path; Equipped with The substrate processing method includes: (a) starting the supply of the gas to the gas hole in the peripheral gas supply unit while the substrate is placed on the electrostatic chuck; (b) detecting a flow rate or pressure of the gas by the gas detection unit and comparing the value of the flow rate or pressure of the gas with a planned flow rate value or a planned pressure value of the gas; (c) determining that the substrate is misaligned if the gas flow rate or pressure value is outside a range of a planned gas flow rate or pressure value; A method for processing a substrate, comprising:

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