Semiconductor manufacturing device and semiconductor device

Abstract

To provide a technique capable of reducing a load on a cutting member when manufacturing a semiconductor device using wires having a harder hardness than aluminum wires as wiring.SOLUTION: A semiconductor manufacturing device 100 includes a wire guide 1 for supplying a wire 29, a tool 3 for joining the wire 29 supplied from the wire guide 1 to a plurality of joining portions in semiconductor devices 20, 40, a first blade 5 for half-cutting the remaining portion of the wire 29 excluding the portion between the plurality of joining portions, and a second blade 6 having a cutting edge that is acuter than the cutting edge of the first blade 5 and cutting the half-cut wire 29.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and a semiconductor device. [Background technology]

[0002] Conventionally, in the manufacture of semiconductor devices, aluminum wires are used to connect members to be bonded, such as semiconductor elements, etc. After bonding of the aluminum wires, unnecessary remaining portions of the aluminum wires are cut off.

[0003] For example, Patent Document 1 describes a method of cutting the aluminum wire by half-cutting the remaining portion of the aluminum wire in the air near the semiconductor element and then performing a tearing operation on that portion to avoid damaging the semiconductor element when cutting the aluminum wire. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2002-26058 A Summary of the Invention [Problem to be solved by the invention]

[0005] In recent years, efforts have been made to reduce space and improve performance in semiconductor devices. As a result, for semiconductor devices that operate at high temperatures and have a long life, the replacement of conventional wiring technology using aluminum wires with wiring technology using copper wires, which are harder than aluminum wires, or other metal wiring that is expected to increase the durability of semiconductor devices, has been considered.

[0006] However, with wiring technology using copper wire, the harder wire is harder than aluminum wire, which places a higher load on cutting members such as cutters than before, causing problems such as accelerated wear on the cutting members and increased frequency of breakage.

[0007] Therefore, an object of the present disclosure is to provide a technique capable of reducing the load on a cutting member when manufacturing a semiconductor device that uses a wire having a higher hardness than an aluminum wire as wiring. [Means for solving the problem]

[0008] The semiconductor manufacturing apparatus according to the present disclosure is a semiconductor manufacturing apparatus for manufacturing semiconductor devices, and includes a wire supply unit that supplies wire, a tool that joins the wire supplied from the wire supply unit to a plurality of joinable portions in the semiconductor device, a first blade that half-cuts the remaining portion of the wire excluding the portions between the plurality of joinable portions, and a second blade that has a cutting edge that is acuter than the cutting edge of the first blade and cuts the half-cut wire. Effect of the Invention

[0009] According to the present disclosure, the remaining portion of the wire is cut in two passes using the first blade and the second blade, so that when manufacturing a semiconductor device using wire that is harder than aluminum wire as wiring, the load on the first and second blades, which are the cutting members, can be reduced compared to when the wire is cut in one pass. [Brief description of the drawings]

[0010] [Figure 1] 2 is a side view showing a configuration of a wire guide and its surroundings provided in the semiconductor manufacturing apparatus according to the embodiment; FIG. [Diagram 2] FIG. 1 is a perspective view of a case-type semiconductor device. [Diagram 3] FIG. 1 is a cross-sectional view of a case-type semiconductor device. [Figure 4] FIG. 1 is a side view of a lead frame type semiconductor device. [Diagram 5] FIG. 1 is a cross-sectional view of a lead frame type semiconductor device. [Figure 6] 4 is a side view showing an example of a drive mechanism for driving a first blade and a second blade included in the semiconductor manufacturing apparatus according to the embodiment. FIG. [Figure 7] 11 is a side view showing another example of the drive mechanism for driving the first blade and the second blade included in the semiconductor manufacturing apparatus according to the embodiment. FIG. [Figure 8] FIG. 4 is a side view showing an example of a cut surface of a wire. [Figure 9] FIG. 11 is a side view showing another example of a cut surface of a wire. [Figure 10] 11A and 11B are side views showing operations in a wiring process in the semiconductor manufacturing apparatus according to the embodiment. [Figure 11] 11A and 11B are side views showing operations in a wiring process in the semiconductor manufacturing apparatus according to the embodiment. [Figure 12] 11A and 11B are side views showing operations in a wiring process in the semiconductor manufacturing apparatus according to the embodiment. [Figure 13] 11A and 11B are side views showing operations in a wiring process in the semiconductor manufacturing apparatus according to the embodiment. [Figure 14] 11A and 11B are side views showing operations in a wiring process in the semiconductor manufacturing apparatus according to the embodiment. [Figure 15] 11A and 11B are side views showing operations in a wiring process in the semiconductor manufacturing apparatus according to the embodiment. [Figure 16] 11A and 11B are side views showing operations in a wiring process in the semiconductor manufacturing apparatus according to the embodiment. [Figure 17] 11A and 11B are side views showing operations in a wiring process in the semiconductor manufacturing apparatus according to the embodiment. [Figure 18] 11A and 11B are side views showing operations in a wiring process in the semiconductor manufacturing apparatus according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] <Embodiment> DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment will be described below with reference to the accompanying drawings. Fig. 1 is a side view showing a wire guide 1 and its surrounding structure provided in a semiconductor manufacturing apparatus 100 according to the embodiment.

[0012] As shown in FIG. 1, semiconductor manufacturing equipment 100 is equipment for manufacturing semiconductor devices, and more specifically, is equipment for performing a wiring process which is part of the manufacturing process of the semiconductor device.

[0013] (Configuration of Semiconductor Device) First, a brief description will be given of the case-type semiconductor device 20 manufactured by the semiconductor manufacturing apparatus 100. FIG. 2 is a perspective view of the case-type semiconductor device 20. FIG. 3 is a cross-sectional view of the case-type semiconductor device 20. As shown in FIGS. 2 and 3, the case-type semiconductor device 20 includes an insulating substrate 22, a semiconductor element 25, a case 26, a terminal 27, a sealing resin 28, and a wire 29. The insulating substrate 22 includes an insulating layer 21a, a metal pattern 21b provided on the upper surface of the insulating layer 21a, and a metal pattern 21c provided on the lower surface of the insulating layer 21a. The metal patterns 21b and 21c are made of copper, aluminum, or nickel. In addition, when the metal patterns 21b and 21c are copper patterns, the copper patterns may be nickel-plated or the like.

[0014] The semiconductor element 25 is mounted on the metal pattern 21b via a bonding material 24. The semiconductor element 25 is, for example, an IGBT (Insulated Gate Bipolar Transistor), a RC-IGBT (Reverse Conducting - IGBT), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), or a FWD (Free Wheeling Diode). The material of the semiconductor element 25 may be ordinary silicon (Si), or may be a wide band gap semiconductor such as silicon carbide (SiC), gallium nitride (GaN), or diamond. When the material of the semiconductor element 25 is a wide band gap semiconductor, stable operation under high temperature and high voltage and high switching speed can be achieved. The number of semiconductor elements 25 may be one or more.

[0015] Case 26 is formed in a rectangular frame shape, and is fixed to the side surface of insulating substrate 22 so as to surround the sides of insulating substrate 22 and semiconductor element 25. Terminal 27 is attached to the inner peripheral surface of case 26. The attachment method of terminal 27 is not limited to this, and terminal 27 may be embedded in sealing resin 28 or may be provided integrally with case 26 by insert molding. One end side of terminal 27 protrudes to the outside of case 26 and is bent horizontally (see FIG. 2). Note that, as shown in FIG. 3, terminal 27 may be left standing vertically without being bent horizontally.

[0016] Wire 29 connects semiconductor element 25 and terminal 27, and also connects semiconductor elements 25 to each other. Wire 29 is made of a metal harder than aluminum, and is, for example, a copper wire having a circular cross section with a diameter of 100 μm to 600 μm. Alternatively, wire 29 may be, for example, a copper ribbon wire having a rectangular cross section with a width of about 0.1 mm to 20 mm and a height of about 0.1 mm to 5 mm.

[0017] The sealing resin 28 fills the inside of the case 26 and seals the semiconductor element 25 mounted on the insulating substrate 22. The sealing resin 28 is an epoxy resin or the like.

[0018] After the semiconductor element 25 is mounted on the insulating substrate 22, a wiring process is performed in which internal wiring is performed using wires 29. The wiring process is a process in which a first joined portion and a second joined portion in the semiconductor device 20 are connected with wires 29, such as between the semiconductor element 25 and the terminal 27, between the semiconductor element 25 and the metal pattern 21b formed on the upper surface of the insulating substrate 22, or between the semiconductor elements 25 (one semiconductor element 25 and another semiconductor element 25), and is an important process for the semiconductor device 20 to perform its electrical function.

[0019] The semiconductor manufacturing apparatus 100 can be used to manufacture not only the case-type semiconductor device 20 but also the leadframe-type semiconductor device 40. The leadframe-type semiconductor device 40 will be briefly described below. Fig. 4 is a side view of the leadframe-type semiconductor device 40. Fig. 5 is a cross-sectional view of the leadframe-type semiconductor device 40.

[0020] As shown in FIGS. 4 and 5, a lead frame type semiconductor device 40 includes a lead frame 41, an insulating sheet 42, a plurality of semiconductor elements 25, wires 29, a lead frame 43, and a sealing resin .

[0021] The insulating sheet 42 is adhered to the lower surface of the lead frame 41. Some of the semiconductor elements 25 are mounted on the upper surface of the lead frame 41 via a bonding material 24, and the remaining semiconductor elements 25 are mounted on the upper surface of the lead frame 43 via a bonding material 24a having properties different from the bonding material 24. The bonding materials 24, 24a are solder, silver paste, sintered paste, or the like. The wires 29 connect the semiconductor elements 25 and the lead frame 43, and also connect the semiconductor elements 25 to each other. The wires 29 connected to the semiconductor elements 25 mounted on the upper surface of the lead frame 43 may have a different wire diameter from the other wires 29. The sealing resin 28 is formed in a rectangular parallelepiped shape and seals the lead frame 41, the insulating sheet 42, the semiconductor elements 25, the wires 29, and the lead frame 43. Note that the sealing resin 28 is not shown in FIG. 5.

[0022] (Configuration of semiconductor manufacturing equipment) Next, the semiconductor manufacturing apparatus 100 will be described. As shown in FIG. 1, the semiconductor manufacturing apparatus 100 includes a wire guide 1 as a wire supply unit, a wire guide holder 2, a tool 3, a wire clamper 4, a first blade 5, and a second blade 6. Hereinafter, the mechanism including the wire guide 1, the wire guide holder 2, the tool 3, the wire clamper 4, the first blade 5, and the second blade 6 is also referred to as a wire bond mechanism. In other words, the semiconductor manufacturing apparatus 100 includes a wire bond mechanism. Although not shown, the semiconductor manufacturing apparatus 100 further includes a reel around which the wire 29 is wound. The reel supplies the wire 29 to the wire guide 1.

[0023] The wire guide 1 is formed in a conical shape and is held by a wire guide holder 2. The wire guide 1 also has a through hole (not shown) formed inside along the longitudinal direction. A wire 29 supplied from a reel is inserted through the through hole of the wire guide 1, and the wire guide 1 guides the wire 29 from the entrance to the exit of the through hole. The entrance of the through hole is located at the upper end of the wire guide 1, and the exit of the through hole is located at the lower end of the wire guide 1.

[0024] The wire clamper 4 is disposed above the wire guide 1 and holds the wire 29 supplied from the reel to the wire guide 1 at the upper side of the wire guide 1 .

[0025] The tool 3 is disposed below the wire guide 1 so that the tip of the tool 3 is located around the exit of the through hole in the wire guide 1. The tool 3 applies vibration while pressing the wire 29 supplied from the wire guide 1 to generate frictional heat, which melts the wire 29 and bonds it to the first and second bonded parts of the semiconductor device 20. It goes without saying that when a method called stitch bonding is used, the wire 29 is connected not only to the first and second bonded parts, but also to three or more bonded parts, such as a third and fourth bonded part.

[0026] The semiconductor manufacturing apparatus 100 is a front-cut type semiconductor manufacturing apparatus. Therefore, the first blade 5 is disposed on the front side of the tool 3, that is, on the opposite side of the tool 3 from the wire guide holder 2. The first blade 5 is disposed so that the tip of the first blade 5 is located around the tip of the tool 3. The shape of the tip of the first blade 5 is spherical, rectangular, or trapezoidal, and the angle of the tip of the first blade 5 is an obtuse angle. The first blade 5 half-cuts the remaining part of the wire 29 except for the part between the first bonded part and the second bonded part. Here, half-cutting means cutting to a thickness of about half the diameter of the wire 29.

[0027] In addition, the width of the first blade 5 is made larger than the diameter of the wire 29, and the portion of the first blade 5 that comes into contact with the wire 29, such as the cutting edge, is polished to a finish. This makes it possible to prevent the first blade 5 from being damaged during the cutting operation due to minute scratches on the first blade 5, and to perform the cutting operation smoothly.

[0028] The second blade 6 is disposed between the tool 3 and the first blade 5. The second blade 6 is disposed so that the tip of the second blade 6 is located around the tip of the tool 3. The second blade 6 has a tip with an acute angle smaller than that of the first blade 5, and when the wire bonding mechanism is in a stationary state, the tip of the second blade 6 is located above the tip of the first blade 5. The second blade 6 cuts the wire 29 that has been half-cut by the first blade 5. The positional relationship between the tip of the first blade 5 and the tip of the second blade 6 varies depending on the configuration of the drive mechanism that drives the first blade 5 and the second blade 6, and is not limited to the above positional relationship.

[0029] In addition, the width of the second blade 6 is formed to be larger than the diameter of the wire 29, and the portion of the second blade 6 that comes into contact with the wire 29, such as the cutting edge, is polished to a finish. This makes it possible to prevent the damage to the second blade 6 from progressing during the cutting operation due to minute scratches on the second blade 6, and to perform the cutting operation smoothly.

[0030] The first blade 5 and the second blade 6 are arranged opposite the wire guide 1 across the tool 3, and the second blade 6 is arranged closer to the tool 3 than the first blade 5, but this is not limited to the above, and the first blade 5 may also be arranged closer to the tool 3 than the second blade 6.

[0031] Furthermore, the semiconductor manufacturing apparatus 100 is not limited to a front-cut type, and may be a rear-cut type. In this case, the first blade 5 and the second blade 6 may be disposed between the tool 3 and the wire guide 1.

[0032] Furthermore, the semiconductor manufacturing apparatus 100 may be configured as a combination of the front cut type and the rear cut type. In this case, the first blade 5 is disposed between the tool 3 and the wire guide 1, and the second blade 6 is disposed on the opposite side of the tool 3 to the wire guide 1.

[0033] Next, a drive mechanism for driving the first blade 5 and the second blade 6 will be described. Fig. 6 is a side view showing an example of a drive mechanism for driving the first blade 5 and the second blade 6 included in the semiconductor manufacturing apparatus 100 according to the embodiment. Fig. 7 is a side view showing another example of a drive mechanism for driving the first blade 5 and the second blade 6 included in the semiconductor manufacturing apparatus 100 according to the embodiment.

[0034] As shown in FIG. 6, the first blade 5 is moved upward and downward by the damper mechanism 7. The second blade 6 is moved upward and downward by the motor 8. The damper mechanism 7 can be constructed more inexpensively than the motor 8, but the positioning accuracy of the first blade 5 is lower than when the motor 8 is used, and therefore the processing accuracy of the cut surface 30 is also lower. Therefore, it is desirable to use the motor 8 to drive the second blade 6, which requires higher processing accuracy. The first blade 5 does not require as high processing accuracy as the second blade 6, so the damper mechanism 7 is used to drive the first blade 5. In addition, when the cost of parts of the semiconductor manufacturing apparatus 100 is not an issue, as shown in FIG. 7, the motor 8a may be used to drive the first blade 5 and the motor 8b may be used to drive the second blade 6.

[0035] Next, a description will be given of a cut surface of the wire 29. Fig. 8 is a side view showing an example of the cut surface of the wire 29. Fig. 9 is a side view showing another example of the cut surface of the wire 29.

[0036] The wire 29 is half-cut by the first blade 5 and then cut by the second blade 6, thereby forming two continuous different cut surfaces 30, 31 as shown in Figures 8 and 9. Specifically, the cut surface 30 by the first blade 5 and the cut surface 31 by the second blade 6 are formed continuously above and below. Figure 8 shows the cut surface 30 when the cutting edge of the first blade 5 is spherical, and Figure 9 shows the cut surface 30 when the cutting edge of the first blade 5 is rectangular.

[0037] (Semiconductor manufacturing equipment operation) Next, a description will be given of the operation of the semiconductor manufacturing apparatus 100. Figures 10 to 18 are side views showing the operation of the wiring process in the semiconductor manufacturing apparatus 100 according to the embodiment. The following describes the case of manufacturing the semiconductor device 20, but since the case of manufacturing the semiconductor device 40 is similar, a description of the case of manufacturing the semiconductor device 40 will be omitted.

[0038] First, as shown in Fig. 10, a wire bond mechanism consisting of a wire guide 1, a wire guide holder 2, a tool 3, a wire clamper 4, a first blade 5, and a second blade 6 is lowered toward a semiconductor element 25, which is a first part to be bonded. Usually, the wire bond mechanism is lowered at high speed to a position of about 500 μm to 1000 μm from the first part to be bonded, and thereafter is lowered at a slow speed called a search speed to detect the first part to be bonded. The reason for the slow descent is that it is necessary to take into account the variation in the height position of the first part to be bonded.

[0039] 11, when semiconductor manufacturing equipment 100 detects the first part to be joined, tool 3 outputs the load and ultrasonic vibration required for the wiring process for a set period of time. This operation completes the joining of first part to be joined and wire 29. When wire 29 is an aluminum wire with a diameter of about 100 μm to 500 μm, the joining time is about 50 ms to 300 ms, but when wire 29 is a copper wire, the joining time varies depending on the wire diameter, but is a little longer than that of an aluminum wire.

[0040] Next, when the bonding between the first bonded part and wire 29 is completed, the process moves to the operation of forming a wiring path (loop). As shown in Figures 12 and 13, the wire bonding mechanism rises and moves horizontally toward the second bonded part. At this time, the wire bonding mechanism may be moved up and down to form a mountain-shaped or trapezoidal loop, or mechanical contact deformation may be applied to wire 29 by a loop forming part (not shown).

[0041] Next, as shown in Fig. 14, the wire bond mechanism moves down toward the second bonded portion while forming a loop. Note that the wire bond mechanism before moving down is shown by a two-dot chain line. As with the operation described in Fig. 10, the wire bond mechanism moves down at high speed to a distance of 500 μm to 1000 μm from the second bonded portion, and thereafter moves down at a slower speed called the search speed to detect the second bonded portion.

[0042] 15, when semiconductor manufacturing equipment 100 detects the second part to be bonded, tool 3 outputs the load and ultrasonic vibration required for the wiring process for a determined time, in the same manner as in the operation described in FIG. 11. This operation completes the bonding of the second part to be bonded and wire 29.

[0043] 16, when the bonding of the second bonded portion and wire 29 is completed, the wire bonding mechanism rises once before the cutting operation, and the wire bonding mechanism performs an operation of drawing out wire 29 the distance required for bonding the first point of the next wire 29 (bonding the first bonded portion). This operation is performed by raising the wire bonding mechanism and moving it horizontally along the wiring direction. When the wire 29 is secured for the distance required for bonding the first point of the next wire 29, the cutting operation begins.

[0044] Next, as shown in FIG. 17, the wire bonding mechanism is lowered to a height required to cut wire 29, and then first blade 5 is lowered to half-cut wire 29, and then second blade 6 is lowered to cut wire 29.

[0045] Next, as shown in FIG. 18, after the first blade 5 and the second blade 6 are raised, the wire bonding mechanism moves a specified distance in the wiring direction, and performs a tearing operation if there is an incomplete cut.

[0046] (effect) As described above, the semiconductor manufacturing apparatus 100 according to the embodiment includes a wire guide 1 which supplies a wire 29, a tool 3 which joins the wire 29 supplied from the wire guide 1 to a plurality of joining portions in the semiconductor device 20, 40, a first blade 5 which half-cuts the remaining portion of the wire 29 excluding the portion between the plurality of joining portions, and a second blade 6 which has a cutting edge which is acuter than the cutting edge of the first blade 5 and cuts the half-cut wire 29.

[0047] Therefore, since the remaining portion of the wire 29 is cut in two passes by the first blade 5 and the second blade 6, when manufacturing the semiconductor device 20, 40 using the wire 29 harder than an aluminum wire as wiring, the load on the first blade 5 and the second blade 6, which are the cutting members, can be reduced compared to when cutting the wire 29 in one pass. As a result, wear of the first blade 5 and the second blade 6 is suppressed, and the first blade 5 and the second blade 6 are also less likely to be damaged, making it possible to provide a semiconductor manufacturing device equipped with a cutting member that has a longer life than before.

[0048] In addition, since the frequency of replacement of the first blade 5 and the second blade 6 is reduced, it is possible to reduce the downtime of the semiconductor manufacturing apparatus 100 due to replacement of the first blade 5 and the second blade 6. This makes it possible to improve the productivity of the semiconductor devices 20 and 40.

[0049] Moreover, the semiconductor manufacturing apparatus 100 further includes a damper mechanism 7 for moving the first blade 5 and a motor 8 for moving the second blade 6. Since the first blade 5 does not require as high a machining accuracy as the second blade 6, the damper mechanism 7 is used to drive the first blade 5, thereby making it possible to reduce the cost of the semiconductor manufacturing apparatus 100.

[0050] In addition, since the angle of the tip of the second blade 6 is an acute angle, the second blade 6 tends to wear out quickly, but since the angle of the tip of the first blade 5 is an obtuse angle, by half-cutting the wire 29 with the first blade 5 and then cutting it with the second blade 6, it is possible to reduce wear on the second blade 6.

[0051] Moreover, the semiconductor device 20, 40 includes a semiconductor element 25 and a wire 29 connected to the semiconductor element 25 and having two continuous different cut surfaces 30, 31. Since the cut surface 30 by the first blade 5 and the cut surface 31 by the second blade 6 are formed on the wire 29, it is possible to clearly show by the continuous different cut surfaces 30, 31 that two cuts have been performed. Furthermore, since the anchor effect of the sealing resin 28 by the wire 29 can be improved, it is possible to improve the life of the joint between the wire 29 and the first joined part and the joint between the wire 29 and the second joined part.

[0052] The embodiment can be modified as appropriate.

[0053] Various aspects of the present disclosure are summarized below as appendices.

[0054] (Appendix 1) A semiconductor manufacturing apparatus for manufacturing a semiconductor device, a wire supplying unit for supplying a wire; a tool for joining the wire supplied from the wire supply unit to a plurality of joining portions of the semiconductor device; a first blade that half-cuts a remaining portion of the wire excluding portions between the plurality of joined portions; a second blade having a cutting edge that is acuter than the cutting edge of the first blade and that cuts the half-cut wire; A semiconductor manufacturing apparatus comprising:

[0055] (Appendix 2) a damper mechanism that moves the first blade; A motor that moves the second blade; 2. The semiconductor manufacturing apparatus of claim 1, further comprising:

[0056] (Appendix 3) 3. The semiconductor manufacturing apparatus according to claim 1, wherein the angle of the cutting edge of the first blade is an obtuse angle.

[0057] (Appendix 4) A semiconductor element; a wire connected to the semiconductor element and having two continuous different cut surfaces; A semiconductor device comprising:

[0058] (Appendix 5) 5. The semiconductor device according to claim 4, wherein the wire has a diameter of 100 μm or more and 600 μm or less and is made of a metal having a harder property than aluminum.

[0059] (Appendix 6) The semiconductor device according to claim 4 or 5, wherein the wire is a ribbon wire. [Explanation of symbols]

[0060] 1 wire guide, 3 tool, 5 first blade, 6 second blade, 7 damper mechanism, 8, 8a, 8b motor, 20 semiconductor device, 25 semiconductor element, 29 wire, 30, 31 cutting surface, 40 semiconductor device, 100 semiconductor manufacturing apparatus.

Claims

1. A semiconductor manufacturing apparatus for manufacturing a semiconductor device, a wire supplying unit for supplying a wire; a tool for joining the wire supplied from the wire supply unit to a plurality of joining portions of the semiconductor device; a first blade that half-cuts a remaining portion of the wire excluding portions between the plurality of joined portions; a second blade having a cutting edge that is acuter than the cutting edge of the first blade and that cuts the half-cut wire; A semiconductor manufacturing apparatus comprising:

2. a damper mechanism for moving the first blade; A motor that moves the second blade; The semiconductor manufacturing apparatus according to claim 1 , further comprising:

3. The semiconductor manufacturing apparatus according to claim 1 , wherein the angle of the cutting edge of the first blade is an obtuse angle.

4. A semiconductor element; a wire connected to the semiconductor element and having two continuous different cut surfaces; A semiconductor device comprising:

5. 5. The semiconductor device according to claim 4, wherein the wire has a diameter of 100 [mu]m or more and 600 [mu]m or less and is made of a metal having a harder property than aluminum.

6. The semiconductor device according to claim 4 , wherein the wire is a ribbon wire.

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