Substrate processing device

Abstract

To provide a substrate processing device that processes substrates one by one by immersing the substrates one by one in a processing liquid with a simpler configuration.SOLUTION: A substrate processing device 100 processes a substrate W with a processing liquid L. The substrate processing device 100 includes a substrate holding unit 2, a storage tank 4, and a fluid supply unit 6. The substrate holding unit 2 holds the substrate W in a horizontal posture or a posture inclined with respect to a horizontal direction. The storage tank 4 stores the processing liquid L and accommodates the substrate W to immerse the substrate W in the processing liquid L. The fluid supply unit 6 supplies fluid to the storage tank 4. The storage tank 4 has a bottom wall 41 and a side wall 42 protruding upward from the bottom wall 41. The processing liquid L is stored in an inner space 4a surrounded by the bottom wall 41 and the side wall 42. The side wall 42 has at least one ejection portion 5. The at least one ejection portion 5 ejects fluid supplied from the fluid supply unit 6 into the processing liquid L stored in the inner space 4a to stir the processing liquid L.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] 2. Description of the Related Art There has been proposed a single-substrate processing apparatus that processes substrates one by one by immersing the substrates one by one in a processing liquid (see, for example, Patent Document 1).

[0003] For example, the substrate processing apparatus of Patent Document 1 includes a phosphoric acid solution nozzle, a water nozzle, a storage tank, a spin chuck, a lifting mechanism, and a heater, and performs a phosphoric acid etching process and a rinsing process.

[0004] The phosphoric acid solution nozzle ejects the phosphoric acid solution toward the storage tank to store the phosphoric acid solution in the storage tank. The spin chuck holds the wafer horizontally and rotates it. The lifting mechanism raises and lowers the storage tank between an upper position and a lower position. As the storage tank moves from the lower position to the upper position, the wafer held by the spin chuck is immersed in the phosphoric acid solution stored in the storage tank. The heater is embedded in the storage tank. The heater heats the wafer immersed in the phosphoric acid solution.

[0005] At the start of the phosphoric acid etching process, the lifting mechanism moves the reservoir tank from the lower position to the upper position and immerses the wafer in the phosphoric acid solution. During the phosphoric acid etching process, the heater heats the wafer and the spin chuck rotates the wafer at a low speed (for example, in the range of 10 rpm to 300 rpm). When the phosphoric acid etching process is completed, the lifting mechanism moves the reservoir tank from the upper position to the lower position.

[0006] When the reservoir moves from the upper position to the lower position, the rinse process begins. In the rinse process, the spin chuck rotates the wafer at a rinse process speed (300 rpm to 15,000 rpm), and the water nozzle supplies DIW (deionized water) toward the center of rotation of the wafer.

[0007] According to the substrate processing apparatus of Patent Document 1, it is possible to increase the etching rate of the nitride film while at the same time maintaining a high selectivity of the nitride film. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] JP 2014-93449 A Summary of the Invention [Problem to be solved by the invention]

[0009] However, the substrate processing apparatus of Patent Document 1 needs to rotate the wafer without rotating the storage tank, which makes the apparatus configuration complicated. Therefore, there is room for further improvement in the single-wafer type substrate processing apparatus that processes the substrates one by one by immersing them in the processing liquid.

[0010] The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus having a simpler configuration. [Means for solving the problem]

[0011] According to one aspect of the present invention, a substrate processing apparatus processes a substrate with a processing liquid. The substrate processing apparatus includes a substrate holding unit, a storage tank, and a fluid supply unit. The substrate holding unit holds the substrate in a horizontal position or in a position oblique to the horizontal direction. The storage tank stores the processing liquid and accommodates the substrate to immerse the substrate in the processing liquid. The fluid supply unit supplies fluid to the storage tank. The storage tank has a bottom wall and a side wall protruding upward from the bottom wall. The processing liquid is stored in an inner space surrounded by the bottom wall and the side wall. The side wall has at least one ejection unit. The at least one ejection unit ejects the fluid supplied from the fluid supply unit into the processing liquid stored in the inner space to agitate the processing liquid.

[0012] In one embodiment, the substrate holder holds the substrate in a horizontal position. The storage tank accommodates the substrate held in the horizontal position by the substrate holder and immerses the substrate in the treatment liquid.

[0013] In one embodiment, the jetting section jets the fluid in a direction parallel to the substrate, which is held in a horizontal position.

[0014] In one embodiment, the jetting part jets the fluid in a direction oblique to a horizontal direction from the jetting part toward the center of the substrate.

[0015] In one embodiment, the at least one jetting unit includes two jetting units. One of the two jetting units jets the fluid in a first direction. The other of the two jetting units jets the fluid in a second direction. A magnitude of an angle of the first direction with respect to a horizontal direction from the one jetting unit to a center of the substrate is different from a magnitude of an angle of the second direction with respect to a horizontal direction from the other jetting unit to the center of the substrate.

[0016] In one embodiment, the substrate processing apparatus further includes a moving unit configured to move the substrate holding unit, the moving unit moving the substrate holding unit to move the substrate into the reservoir tank.

[0017] In one embodiment, the substrate processing apparatus further includes a facing member that faces the storage tank and covers the inner space. The fluid includes an inert gas.

[0018] In one embodiment, the substrate processing apparatus further includes a moving unit and an opposing member. The moving unit moves the substrate holding unit. The opposing member faces the storage tank and covers the inner space. The fluid includes an inert gas. The opposing member is coupled to the substrate holding unit. The moving unit moves the substrate holding unit and the opposing member to move the substrate toward the inside of the storage tank and to move the opposing member to a position where the opposing member covers the inner space.

[0019] In one embodiment, the substrate processing apparatus further includes a moving unit configured to move the substrate holder, the substrate having a surface to be processed by the processing liquid, and the moving unit configured to move the substrate to a position corresponding to a position where the ejection unit is provided and a direction in which the surface to be processed faces.

[0020] In one embodiment, the substrate processing apparatus further includes a liquid supply unit, a liquid discharge unit, and a controller. The liquid supply unit supplies the processing liquid to the storage tank. The liquid discharge unit drains the processing liquid from the storage tank. The controller controls the fluid supply unit, the liquid supply unit, and the liquid discharge unit. The processing liquid includes a chemical liquid and a rinsing liquid. The controller controls the liquid supply unit and the liquid discharge unit to store the chemical liquid in the storage tank and then store the rinsing liquid. The controller controls the fluid supply unit to agitate the chemical liquid stored in the storage tank.

[0021] In one embodiment, the substrate processing apparatus further includes a liquid supply unit, a liquid discharge unit, and a controller. The liquid supply unit supplies the processing liquid to the storage tank. The liquid discharge unit drains the processing liquid from the storage tank. The controller controls the fluid supply unit, the liquid supply unit, and the liquid discharge unit. The processing liquid includes a chemical liquid and a rinsing liquid. The controller controls the liquid supply unit and the liquid discharge unit to store the chemical liquid in the storage tank and then store the rinsing liquid. The controller controls the fluid supply unit to agitate the rinsing liquid stored in the storage tank.

[0022] In one embodiment, the storage tank further has an outlet provided above the ejection portion.

[0023] In one embodiment, the substrate processing apparatus further includes a control unit that controls the fluid supply unit. The at least one jetting unit includes a plurality of the jetting units divided into a plurality of groups. Each of the groups includes at least one of the jetting units. The control unit controls the fluid supply unit when agitating the processing liquid to switch a period for jetting the fluid for each group.

[0024] In one embodiment, the fluid includes two types of gas. The at least one jetting part includes a plurality of the jetting parts divided into a plurality of groups. Each of the groups includes at least one of the jetting parts. The fluid supply part supplies the two types of gas to the jetting parts belonging to different groups.

[0025] In one embodiment, the substrate processing apparatus further includes a recovery unit that recovers the processing liquid from the storage tank.

[0026] In one embodiment, the treatment liquid includes a microbubble-containing liquid that contains microbubbles.

[0027] In one embodiment, the fine bubbles include fine bubbles of ozone gas.

[0028] In one embodiment, the fluid includes a microbubble-containing liquid that contains microbubbles.

[0029] In one embodiment, the fine bubbles include fine bubbles of ozone gas. Effect of the Invention

[0030] According to the substrate processing apparatus of the present invention, a single-wafer processing apparatus in which substrates are immersed one by one in a processing liquid and processed one by one can be made to have a simpler configuration. [Brief description of the drawings]

[0031] [Figure 1] 1 is a schematic diagram of a substrate processing apparatus according to a first embodiment of the present invention. [Diagram 2] 1 is a cross-sectional view illustrating a schematic configuration of a substrate processing section included in a substrate processing apparatus according to a first embodiment of the present invention. [Diagram 3] 5 is another cross-sectional view illustrating a schematic configuration of a substrate processing section included in the substrate processing apparatus according to the first embodiment of the present invention. FIG. [Figure 4] 1A is a plan view illustrating an example of a substrate to be processed by the substrate processing apparatus according to the first embodiment of the present invention, and FIG. 1B is a cross-sectional view illustrating an example of a substrate to be processed by the substrate processing apparatus according to the first embodiment of the present invention. [Diagram 5] 1 is a cross-sectional view showing a storage tank included in a substrate processing apparatus according to a first embodiment of the present invention. [Figure 6] 1 is a diagram showing a configuration of a storage tank and a fluid supply unit included in a substrate processing apparatus according to a first embodiment of the present invention. [Figure 7] 11 is a diagram showing the opening and closing timing of a fluid on-off valve provided for each group. FIG. [Figure 8] 1A is a developed view of a side wall of a storage tank included in the substrate processing apparatus according to the first embodiment of the present invention, and FIG. 1B is an enlarged view of a part of the substrate processing apparatus according to the first embodiment of the present invention. [Figure 9] FIG. 3 is a diagram showing an operation flow of the substrate processing apparatus according to the first embodiment of the present invention. [Figure 10] FIG. 13 is a diagram showing the substrate processing apparatus when a chemical solution is supplied to a storage tank. [Figure 11] 13 is a diagram showing the substrate processing apparatus when discharging a chemical solution from a storage tank. FIG. [Figure 12] FIG. 13 is a diagram showing the substrate processing apparatus during a rinsing process. [Figure 13] FIG. 13 illustrates the substrate processing apparatus when drying a substrate. [Figure 14] 1A is a diagram showing a substrate positioned at a first stop position during a drying process, and FIG. 1B is a diagram showing a substrate positioned at a second stop position during a drying process. [Figure 15] 1A is a diagram showing another example 1 of the jetting part, and FIG. 1B is a diagram showing another example 2 of the jetting part. [Figure 16] FIG. 11 is a diagram showing the configuration of a storage tank and a fluid supply unit included in a substrate processing apparatus according to a second embodiment of the present invention. [Figure 17] FIG. 11 is a diagram showing a configuration of a storage tank included in a substrate processing apparatus according to a third embodiment of the present invention. [Figure 18] FIG. 11 is a cross-sectional view illustrating a schematic configuration of a substrate processing section included in a substrate processing apparatus according to a fourth embodiment of the present invention. [Figure 19] 11 is a cross-sectional view illustrating a schematic configuration of a substrate processing section included in a substrate processing apparatus according to a fifth embodiment of the present invention. [Figure 20] FIG. 11 is a diagram showing an operation flow of the substrate processing apparatus according to the fifth embodiment of the present invention. [Figure 21] FIG. 13 is a diagram showing the configuration of a storage tank and a fluid supply unit included in a substrate processing apparatus according to a sixth embodiment of the present invention. [Figure 22] 1A is a cross-sectional view showing a portion of a substrate before and after the substrate is subjected to a chemical processing, and FIG. 1B is a cross-sectional view showing a portion of a substrate after the substrate is subjected to the chemical processing. [Figure 23] FIG. 13 is a cross-sectional view illustrating a schematic configuration of a substrate processing section included in a substrate processing apparatus according to a seventh embodiment of the present invention. [Figure 24] FIG. 13 is a diagram showing the substrate processing apparatus during a rinsing process. [Diagram 25] FIG. 13 is a diagram showing an operation flow of the substrate processing apparatus according to the seventh embodiment of the present invention. [Figure 26] 13 is a cross-sectional view illustrating a schematic configuration of a substrate processing section included in a substrate processing apparatus according to an eighth embodiment of the present invention. [Figure 27] FIG. 13 is a cross-sectional view illustrating a schematic configuration of a substrate processing section included in a substrate processing apparatus according to a ninth embodiment of the present invention. [Figure 28] 13 is a cross-sectional view illustrating a schematic view of a part of the configuration of a substrate processing section included in a substrate processing apparatus according to a tenth embodiment of the present invention. FIG. [Figure 29] FIG. 16 is a diagram showing the configuration of a storage tank and a fluid supply unit included in a substrate processing apparatus according to a tenth embodiment of the present invention. [Diagram 30]11 is a cross-sectional view showing a schematic view of a part of the configuration of a substrate processing section included in a substrate processing apparatus according to an eleventh embodiment of the present invention. [Diagram 31] 23 is another cross-sectional view showing a schematic view of a part of the configuration of the substrate processing section included in the substrate processing apparatus according to the eleventh embodiment of the present invention. [Diagram 32] 12 is a cross-sectional view illustrating a schematic configuration of a substrate processing section included in a substrate processing apparatus according to a twelfth embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0032] Hereinafter, an embodiment of the substrate processing apparatus of the present invention will be described with reference to the drawings (FIGS. 1 to 32). However, the present invention is not limited to the following embodiment, and can be embodied in various forms without departing from the gist of the present invention. Note that where the description is repeated, it may be omitted as appropriate. Also, in the drawings, the same or corresponding parts are denoted by the same reference symbols, and description will not be repeated.

[0033] The "substrate" to be processed in the substrate processing apparatus according to the present invention can be a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk. In the following, an embodiment of the present invention will be described mainly taking as an example a case in which a disk-shaped semiconductor wafer is the substrate to be processed, but the substrate processing apparatus according to the present invention can be similarly applied to various substrates other than the above-mentioned semiconductor wafer. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing apparatus according to the present invention can be applied to substrates of various shapes.

[0034] [Embodiment 1] Fig. 1 is a schematic diagram of a substrate processing apparatus 100 according to the present embodiment. More specifically, Fig. 1 is a schematic plan view of the substrate processing apparatus 100. The substrate processing apparatus 100 processes substrates W. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus, and processes the substrates W one by one using a processing liquid L. The substrate processing apparatus 100 is, for example, a cleaning apparatus or an etching apparatus.

[0035] As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 200, a fluid cabinet 101, a plurality of fluid boxes 102, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a controller 10.

[0036] Each load port LP accommodates a stack of substrates W. The indexer robot IR transports substrates W between the load port LP and the center robot CR. The center robot CR transports substrates W between the indexer robot IR and the substrate processing unit 200. Note that a placement stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the device may be configured to indirectly transfer the substrate W between the indexer robot IR and the center robot CR via the placement stage.

[0037] The substrate processing units 200 form a plurality of towers TW (four towers TW in FIG. 1). The towers TW are arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing units 200 (three substrate processing units 200 in FIG. 1) stacked vertically.

[0038] The fluid cabinet 101 contains a processing liquid L and a gas. The gas includes, for example, an inert gas. Each of the fluid boxes 102 corresponds to one of the multiple towers TW. The processing liquid L and the gas in the fluid cabinet 101 are supplied to all the substrate processing units 200 included in the corresponding tower TW via any of the fluid boxes 102. Each of the substrate processing units 200 processes a substrate W using the processing liquid L. The gas is used to agitate the processing liquid L, as will be described later with reference to FIGS. 2 and 3. For example, each of the substrate processing units 200 performs an etching process or a cleaning process on the substrate W.

[0039] The processing liquid L is not particularly limited as long as it is a liquid that contacts the substrate W. The processing liquid L may include, for example, a chemical liquid and a rinsing liquid. The chemical liquid includes, for example, dilute hydrofluoric acid (DHF), hydrofluoric acid (HF), hydrofluoric nitric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H3PO4), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, ammonia water, hydrogen peroxide water, organic acid (for example, citric acid, oxalic acid), organic alkali (for example, TMAH: tetramethylammonium hydroxide), sulfuric acid hydrogen peroxide water mixture (SPM), ammonia hydrogen peroxide water mixture (SC1), hydrochloric acid hydrogen peroxide water mixture (SC2), isopropyl alcohol (IPA), a surfactant, or a corrosion inhibitor. The rinsing liquid is, for example, deionized water (DIW; Deionized Water). In other words, the rinse liquid may be so-called "ultrapure water". However, the rinse liquid is not limited to deionized water. For example, the rinse liquid may be carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm).

[0040] The controller 10 controls the operation of each part of the substrate processing apparatus 100. For example, the controller 10 controls the substrate processing unit 200, the load port LP, the indexer robot IR, and the center robot CR. The controller 10 includes a control unit 11 and a storage unit 12.

[0041] The control unit 11 controls the operation of each unit of the substrate processing apparatus 100 based on various information stored in the storage unit 12. The control unit 11 has, for example, a processor. The control unit 11 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor. Alternatively, the control unit 11 may have a general-purpose computing device or a dedicated computing device.

[0042] The storage unit 12 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 12 stores various data and various computer programs. The various data includes recipe data. The recipe data indicates a recipe that specifies the processing content, processing conditions, and processing procedure of the substrate W. In the recipe, various setting values ​​are set as processing conditions.

[0043] The storage unit 12 includes a main storage device. The main storage device includes, for example, a semiconductor memory. The storage unit 12 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 12 may include a removable medium.

[0044] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 and 2. Figure 2 is a cross-sectional view that shows a schematic configuration of a substrate processing section 200 included in the substrate processing apparatus 100 of this embodiment. In detail, Figure 2 shows the substrate processing section 200 when the substrate holding section 2 is located at the upper position P1.

[0045] 2, the substrate processing unit 200 includes a processing chamber 201, a substrate holding unit 2, an opposing member 3, a moving unit 30, and a storage tank 4. The substrate processing apparatus 100 further includes a fluid supply unit 6, a supply and discharge unit 7, and a discharge unit 8. As will be described with reference to FIG. 3, the substrate processing unit 200 immerses the substrates W one by one in a processing liquid L stored in the storage tank 4 to process the substrates W one by one.

[0046] The substrate W is carried into the processing chamber 201 and processed therein. The processing chamber 201 has a substantially box-like shape. The processing chamber 201 accommodates the substrate holding unit 2, the facing member 3, the moving unit 30, the storage tank 4, part of the fluid supply unit 6, part of the supply and discharge unit 7, and part of the discharge unit 8. The processing chamber 201 is, for example, a chamber.

[0047] The substrate holding part 2 holds the substrate W in a horizontal position. The substrate holding part 2 is controlled by a control device 10 (control part 11). Specifically, the substrate holding part 2 has a plurality of clamping members 21 and a drive mechanism 23. For example, the substrate holding part 2 has three or more clamping members 21.

[0048] The multiple clamping members 21 clamp the substrate W. The multiple clamping members 21 hold the substrate W in a horizontal position. Each of the clamping members 21 is a rod-shaped or column-shaped member extending in the vertical direction. In this embodiment, the multiple clamping members 21 are arranged along the circumferential direction.

[0049] Each of the clamping members 21 has a clamping portion 22. The clamping portion 22 includes, for example, a recess or a notch formed in the clamping member 21. The vertical positions of the clamping portions 22 provided on each of the clamping members 21 are the same or approximately the same. The end surface of the substrate W comes into contact with the clamping portion 22 of each of the clamping members 21, thereby holding the substrate W in a horizontal position.

[0050] More specifically, the drive mechanism 23 rotates each clamping member 21 in both forward and reverse directions about its rotation axis, thereby moving the clamping portion 22 provided on each clamping member 21 between a clamping position and an open position. Each rotation axis extends in the vertical direction. Each rotation axis is separated from the central axis of the corresponding clamping member 21. In other words, the center of rotation of each clamping member 21 is eccentric.

[0051] The clamping position indicates a position where the clamping portion 22 contacts the edge face of the substrate W. The open position indicates a position where the clamping portion 22 moves away from the edge face of the substrate W. More specifically, the open position indicates a position radially outward of the substrate W from the clamping position. When the clamping portion 22 moves from the open position to the clamping position, the edge face of the substrate W comes into contact with the clamping portion 22. As a result, the substrate W is clamped by the clamping portions 22 provided on each clamping member 21. When the clamping portion 22 moves from the clamping position to the open position, the clamping portion 22 moves away from the edge face of the substrate W. As a result, the substrate W is released from the multiple clamping members 21 (clamping portions 22).

[0052] The drive mechanism 23 is controlled by the control device 10 (control unit 11). Specifically, the drive mechanism 23 includes an actuator. The actuator of the drive mechanism 23 may include, for example, an electric motor that can rotate in both forward and reverse directions, and a plurality of gears. The drive force generated by the electric motor is transmitted to the plurality of clamping members 21 via the plurality of gears, causing each of the clamping members 21 to rotate.

[0053] The facing member 3 is located above the storage tank 4. The lower surface of the facing member 3 faces the storage tank 4. The facing member 3 may be, for example, a disk-shaped member having a diameter larger than the diameter of the substrate W (semiconductor wafer). In this embodiment, the multiple clamping members 21 are coupled to the facing member 3. In other words, the facing member 3 supports the multiple clamping members 21. The multiple clamping members 21 each extend downward from the facing member 3. Therefore, the multiple clamping members 21 and the facing member 3 are integrated. According to this embodiment, the multiple clamping members 21 and the facing member 3 can be integrated to simplify the device configuration. Also, in this embodiment, the drive mechanism 23 is supported by the facing member 3. Specifically, the drive mechanism 23 is incorporated in the facing member 3. Therefore, the substrate holding unit 2 and the facing member 3 are integrated. According to this embodiment, the substrate holding unit 2 and the facing member 3 can be integrated to simplify the device configuration.

[0054] The moving unit 30 moves the substrate holding unit 2. Specifically, the moving unit 30 moves the substrate holding unit 2 in the vertical direction. That is, the moving unit 30 raises and lowers the substrate holding unit 2. More specifically, the moving unit 30 raises and lowers the substrate holding unit 2 between an upper position P1 and a lower position P2 (see FIG. 3).

[0055] While the substrate holding part 2 holds the substrate W, the moving part 30 raises and lowers the substrate holding part 2, thereby moving the substrate W in the vertical direction. The upper position P1 is a position where the substrate holding part 2 transfers the substrate W to and from the center robot CR (see FIG. 1). As will be described later with reference to FIG. 3, the lower position P2 is a position where the substrate W held by the substrate holding part 2 is immersed in the processing liquid L stored in the storage tank 4. In other words, the moving part 30 moves the substrate holding part 2 to move the substrate W inside the storage tank 4.

[0056] In this embodiment, the moving part 30 moves the facing member 3. Specifically, the moving part 30 raises and lowers the facing member 3. When the moving part 30 raises and lowers the facing member 3, the substrate holding part 2 moves in the vertical direction.

[0057] As shown in FIG. 2, the moving unit 30 may include a connecting unit 31, an arm 32, a base 33, and a lifting mechanism .

[0058] The connecting portion 31 connects the opposing member 3 and the arm 32. For example, the connecting portion 31 is column-shaped or rod-shaped, and the lower end of the connecting portion 31 is coupled to the upper surface of the opposing member 3. The connecting portion 31 extends upward from the opposing member 3.

[0059] The base end of the arm 32 is connected to the base 33. The arm 32 extends horizontally from the base 33. The tip of the arm 32 is connected to the connecting portion 31. Thus, the arm 32 supports the opposing member 3 via the connecting portion 31. The base 33 extends in the vertical direction. The lifting mechanism 34 moves the base 33 in the vertical direction. As a result, the opposing member 3 and the substrate holding portion 2 move in the vertical direction. More specifically, the lifting mechanism 34 moves the base 33 in the vertical direction to move the substrate holding portion 2 between an upper position P1 and a lower position P2 (see Figure 3).

[0060] The lifting mechanism 34 is controlled by the control device 10 (control unit 11). Specifically, the lifting mechanism 34 includes an actuator. The actuator of the lifting mechanism 34 includes, for example, a ball screw mechanism and an electric motor capable of forward and reverse rotation. The electric motor provides a driving force to the ball screw mechanism. The actuator of the lifting mechanism 34 may include a cylinder such as an air cylinder.

[0061] The storage tank 4 stores the processing liquid L. Specifically, the storage tank 4 is in the form of a container with an open top, and the processing liquid L is stored in an inner space 4a of the storage tank 4. As will be described later with reference to FIG. 3, the substrate W is immersed in the processing liquid L stored in the storage tank 4. As a result, the substrate W is processed by the processing liquid L.

[0062] The storage tank 4 may be circular in plan view. The storage tank 4 may be cylindrical with a bottom. The storage tank 4 may be installed in a horizontal position on the bottom surface (bottom wall) of the processing chamber 201, for example. The material of the storage tank 4 may include, for example, silicon carbide (SiC) or stainless steel. The material of the storage tank 4 may include aluminum coated with a fluororesin. The fluororesin includes, for example, polytetrafluoroethylene (PTFE).

[0063] The storage tank 4 has a supply and discharge port 43 and a jetting part 5. The processing liquid L is supplied into the storage tank 4 (inner space 4a) from the supply and discharge port 43. The processing liquid L is also discharged from the supply and discharge port 43 to the outside of the storage tank 4 (inner space 4a). A fluid is jetted into the storage tank 4 (inner space 4a) from the jetting part 5. As a result, the processing liquid L stored in the storage tank 4 (inner space 4a) is agitated. In this embodiment, the fluid jetted from the jetting part 5 is a gas.

[0064] More specifically, the storage tank 4 has a bottom wall 41 and a side wall 42. The bottom wall 41 may be circular in plan view. The bottom wall 41 may be installed, for example, in a horizontal position on the bottom surface (bottom wall) of the processing chamber 201. The side wall 42 is connected to the bottom wall 41. The side wall 42 may be connected to an end (peripheral edge) of the bottom wall 41. The side wall 42 extends upward from the bottom wall 41. The side wall 42 may be annular. The bottom wall 41 and the side wall 42 form an inner space 4a of the storage tank 4. In other words, the inner space 4a is a space surrounded by the bottom wall 41 and the side wall 42.

[0065] Specifically, the bottom wall 41 has a bottom surface 41a. The side wall 42 has an inner peripheral surface 42a. The bottom surface 41a is, for example, circular. The bottom surface 41a may be included in a horizontal plane. The inner peripheral surface 42a is, for example, annular. The inner peripheral surface 42a may extend vertically upward from the bottom surface 41a. The inner space 4a is a space defined by the bottom surface 41a and the inner peripheral surface 42a.

[0066] The ejection portion 5 is provided on the side wall 42 of the storage tank 4. The ejection portion 5 is provided at a position higher than the bottom wall 41. The ejection portion 5 includes at least one ejection port 5a. The ejection port 5a is formed on the side wall 42. The ejection port 5a may be a hole penetrating the side wall 42. A gas (fluid) is ejected from the ejection port 5a into the storage tank 4 (inner space 4a). The diameter of the ejection port 5a is selected, for example, from the range of 0.1 mm or more and 1 mm or less.

[0067] In this embodiment, the supply and discharge port 43 is provided in the bottom wall 41. In other words, the supply and discharge port 43 is formed in the bottom wall 41. The supply and discharge port 43 may be a hole penetrating the bottom wall 41.

[0068] The reservoir 4 will now be described in further detail. As shown in FIG.

[0069] The outlet 44 is provided in the side wall 42. The outlet 44 may be a hole penetrating the side wall 42. The outlet 44 is provided above the jetting part 5. When the processing liquid L is supplied from the supply and discharge port 43, the volume of the processing liquid L stored in the storage tank 4 increases and the liquid level of the processing liquid L reaches the outlet 44, the processing liquid L flows out of the storage tank 4 (inner space 4a) through the outlet 44.

[0070] The liquid receiving portion 45 is provided outside the side wall 42. Specifically, the liquid receiving portion 45 is provided at a position corresponding to the outlet 44. The liquid receiving portion 45 receives the processing liquid L flowing out from the outlet 44. In other words, the liquid receiving portion 45 receives the overflowing processing liquid L. The liquid receiving portion 45 may be, for example, an outer tank.

[0071] The storage tank 4 may have a plurality of outlets 44. That is, the outlets 44 may be provided at a plurality of locations on the side wall 42. In this case, the storage tank 4 may have a plurality of liquid receiving portions 45. Alternatively, the storage tank 4 may have at least one arc-shaped liquid receiving portion 45, or may have an annular liquid receiving portion 45.

[0072] Next, the fluid supply unit 6, the supply and discharge unit 7, and the discharge unit 8 will be described. The fluid supply unit 6 supplies fluid to the storage tank 4. Specifically, the fluid supply unit 6 supplies fluid to the jetting unit 5 (jet outlet 5a). In this embodiment, the fluid supply unit 6 supplies gas to the jetting unit 5 (jet outlet 5a). The fluid supply unit 6 is controlled by the control device 10 (control unit 11).

[0073] The supply and discharge unit 7 supplies the processing liquid L to the storage tank 4. The supply and discharge unit 7 also discharges the processing liquid L from the storage tank 4. The supply and discharge unit 7 is an example of a "liquid supply unit" and a "liquid discharge unit". Specifically, the supply and discharge unit 7 supplies the processing liquid L to the supply and discharge port 43. The supply and discharge unit 7 also discharges the processing liquid L from the storage tank 4 via the supply and discharge port 43. The supply and discharge unit 7 is controlled by the control device 10 (control unit 11).

[0074] The discharge unit 8 discharges the treatment liquid L received by the liquid receiving unit 45 from the liquid receiving unit 45. The discharge unit 8 is controlled by the control device 10 (control unit 11).

[0075] Specifically, as shown in FIG. 2, the fluid supply unit 6 has a fluid pipe 61 and a fluid on-off valve 62. The fluid pipe 61 is a tubular member. The downstream end of the fluid pipe 61 is connected to the jetting unit 5. The fluid pipe 61 passes the fluid up to the jetting unit 5. In this embodiment, the fluid pipe 61 passes the gas up to the jetting unit 5. The gas is, for example, an inert gas. The inert gas includes, for example, nitrogen gas or argon gas. In this embodiment, the inert gas is nitrogen gas. Therefore, the nitrogen gas is jetted from the jetting unit 5. More specifically, the nitrogen gas is jetted from the jetting port 5a.

[0076] The fluid on-off valve 62 is provided in the fluid piping 61. The fluid on-off valve 62 is opened and closed by the control device 10 (control unit 11). The fluid on-off valve 62 controls the flow of gas (fluid) through the fluid piping 61 and the stop of the flow. In other words, the fluid on-off valve 62 controls the supply of gas to the jetting unit 5 (jet outlet 5a) and the stop of the supply.

[0077] Specifically, when the fluid on-off valve 62 opens, gas flows up to the jetting portion 5. As a result, gas is supplied to the jetting portion 5, and the gas is jetted from the jetting portion 5 (jet port 5a). When the fluid on-off valve 62 closes, the flow of gas through the fluid piping 61 stops. In other words, the supply of gas to the jetting portion 5 stops. As a result, the jetting of gas from the jetting portion 5 (jet port 5a) stops.

[0078] Next, a description will be given of the supply and discharge unit 7. As shown in Fig. 2, in this embodiment, the supply and discharge unit 7 has a common pipe 71, a chemical liquid pipe 72, a rinsing liquid pipe 73, a first discharge pipe 74, a chemical liquid on-off valve 75, a rinsing liquid on-off valve 76, an ejector 77, a first on-off valve VA1, a second on-off valve VA2, and a third on-off valve VA3.

[0079] The common pipe 71, the chemical liquid pipe 72, the rinsing liquid pipe 73, and the first discharge pipe 74 are tubular members through which the processing liquid L flows. The chemical liquid on-off valve 75, the rinsing liquid on-off valve 76, the first on-off valve VA1, the second on-off valve VA2, and the third on-off valve VA3 are controlled by the control device 10 (control unit 11) to open and close.

[0080] One end of the common pipe 71 is connected to the supply and discharge port 43. The common pipe 71 communicates with the inner space 4a of the storage tank 4 via the supply and discharge port 43. The first on-off valve VA1, the second on-off valve VA2, and the third on-off valve VA3 are provided on the common pipe 71. Of the first on-off valve VA1, the second on-off valve VA2, and the third on-off valve VA3, the first on-off valve VA1 is closest to the supply and discharge port 43. Of the first on-off valve VA1, the second on-off valve VA2, and the third on-off valve VA3, the third on-off valve VA3 is farthest from the supply and discharge port 43. The second on-off valve VA2 is provided between the first on-off valve VA1 and the third on-off valve VA3.

[0081] The downstream end of the chemical liquid pipe 72 and the downstream end of the rinsing liquid pipe 73 are connected to a common pipe 71. The chemical liquid pipe 72 and the rinsing liquid pipe 73 communicate with the common pipe 71. More specifically, the downstream end of the chemical liquid pipe 72 is connected to the common pipe 71 between the first on-off valve VA1 and the second on-off valve VA2. The downstream end of the rinsing liquid pipe 73 is connected to the common pipe 71 between the second on-off valve VA2 and the third on-off valve VA3.

[0082] The upstream end of the first discharge pipe 74 and the other end of the common pipe 71 are connected to the ejector 77. Therefore, the upstream end of the first discharge pipe 74 is connected to the common pipe 71 via the ejector 77. In other words, the first discharge pipe 74 communicates with the common pipe 71 via the ejector 77.

[0083] The chemical liquid piping 72 allows the chemical liquid to flow up to the common piping 71. The chemical liquid on-off valve 75 is provided in the chemical liquid piping 72. The chemical liquid on-off valve 75 controls the flow of the chemical liquid through the chemical liquid piping 72 and the stop of the flow. In other words, the chemical liquid on-off valve 75 controls the supply of the chemical liquid to the common piping 71 and the stop of the supply.

[0084] When the chemical on-off valve 75 is opened, the chemical flows through the chemical piping 72 to the common piping 71. As a result, the chemical flows into the common piping 71. When opening the chemical on-off valve 75, the control device 10 (control unit 11) opens the first on-off valve VA1 and closes the second on-off valve VA2 and the rinsing liquid on-off valve 76. As a result, the chemical flows through the common piping 71 to the supply and discharge port 43. In other words, the chemical is supplied to the supply and discharge port 43. Therefore, the chemical is supplied from the supply and discharge port 43 to the inner space 4a of the storage tank 4, and the chemical is stored in the storage tank 4.

[0085] When the chemical on-off valve 75 is closed, the flow of the chemical through the chemical pipe 72 is stopped. Therefore, the supply of the chemical to the supply and discharge port 43 is stopped. As a result, the supply of the chemical to the storage tank 4 is stopped.

[0086] The rinse liquid piping 73 allows the rinse liquid to flow to the common piping 71. The rinse liquid on-off valve 76 is provided in the rinse liquid piping 73. Like the chemical liquid on-off valve 75, the rinse liquid on-off valve 76 controls the flow of the rinse liquid through the rinse liquid piping 73 and the stop of the flow.

[0087] When the rinsing liquid on-off valve 76 is opened, the rinsing liquid flows through the rinsing liquid piping 73 to the common piping 71. As a result, the rinsing liquid flows into the common piping 71. When the rinsing liquid on-off valve 76 is opened, the control device 10 (control unit 11) opens the first on-off valve VA1 and the second on-off valve VA2 and closes the chemical liquid on-off valve 75 and the third on-off valve VA3. As a result, the rinsing liquid flows through the common piping 71 to the supply and discharge port 43, in the same manner as when the chemical liquid on-off valve 75 is opened. Therefore, the rinsing liquid is stored in the storage tank 4, in the same manner as when the chemical liquid on-off valve 75 is opened.

[0088] When the rinsing liquid on-off valve 76 is closed, the flow of the rinsing liquid through the rinsing liquid piping 73 is stopped. Therefore, the supply of the rinsing liquid to the supply and discharge port 43 is stopped. As a result, the supply of the rinsing liquid to the storage tank 4 is stopped.

[0089] The ejector 77 is driven when discharging the processing liquid L (chemical liquid or rinsing liquid) from the storage tank 4. The high-pressure fluid that drives the ejector 77 may be, for example, air. The ejector 77 is controlled by the control device 10 (control unit 11).

[0090] When driving the ejector 77, the control device 10 (control unit 11) opens the first on-off valve VA1 to the third on-off valve VA3 and closes the chemical liquid on-off valve 75 and the rinse liquid on-off valve 76. When the ejector 77 is driven, the processing liquid L in the storage tank 4 is sucked into the common pipe 71 via the supply and discharge port 43. The processing liquid L sucked into the common pipe 71 is sucked into the ejector 77 via the common pipe 71, and then sent from the ejector 77 to the first discharge pipe 74. The processing liquid L sent to the first discharge pipe 74 is drained. For example, the first discharge pipe 74 distributes the processing liquid L to a drain tank.

[0091] Next, the discharge section 8 will be described. As shown in Fig. 2, the discharge section 8 has a second discharge pipe 81 and a discharge on-off valve 82. The second discharge pipe 81 is a tubular member. The upstream end of the second discharge pipe 81 is connected to the bottom of the liquid receiving section 45. The processing liquid L received in the liquid receiving section 45 flows into the second discharge pipe 81. The processing liquid L that flows into the second discharge pipe 81 is drained. For example, the second discharge pipe 81 distributes the processing liquid L to a drain tank.

[0092] The discharge on-off valve 82 is provided in the second discharge pipe 81. The discharge on-off valve 82 is opened and closed by the control device 10 (control unit 11). The discharge on-off valve 82 controls the flow of the treatment liquid L through the second discharge pipe 81 and the stop of the flow.

[0093] According to the present embodiment, since the storage tank 4 has the outlet 44, the location from which the processing liquid L overflows is specified to the outlet 44. Therefore, compared to a configuration in which the processing liquid L overflowing (overflowing) from the upper end of the side wall 42 of the storage tank 4 is drained, the overflowing processing liquid L can be easily guided to the drain tank.

[0094] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 2 and 3. Figure 3 is another cross-sectional view that typically shows the configuration of the substrate processing section 200 included in the substrate processing apparatus 100 of this embodiment. In detail, Figure 3 shows the substrate processing section 200 when the substrate holding section 2 is located at the lower position P2.

[0095] 3, when the substrate holder 2 moves from the upper position P1 (FIG. 2) to the lower position P2, the substrate W held by the substrate holder 2 moves toward the inside of the storage tank 4. As a result, the substrate W is immersed in the processing liquid L (chemical liquid) in the storage tank 4, and the substrate W is processed by the processing liquid L (chemical liquid).

[0096] As shown in FIG. 3, when the substrate holder 2 moves from the upper position P1 (FIG. 2) to the lower position P2, the opposing member 3 moves to a position covering the inner space 4a. Specifically, the diameter of the opposing member 3 is equal to or larger than the diameter of the storage tank 4. When the substrate holder 2 moves from the upper position P1 (FIG. 2) to the lower position P2, the lower surface of the opposing member 3 comes into contact with the upper end of the storage tank 4 (the upper end of the side wall 42). Alternatively, the lower surface of the opposing member 3 comes close to the upper end of the storage tank 4 (the upper end of the side wall 42). Therefore, when the substrate holder 2 moves from the upper position P1 (FIG. 2) to the lower position P2, the inner space 4a of the storage tank 4 becomes a sealed space or a substantially sealed space.

[0097] In this embodiment, the control device 10 (control unit 11) controls the fluid supply unit 6 to eject gas (nitrogen gas) from the ejection unit 5 (ejection port 5a) while the substrate W is immersed in the chemical liquid in the storage tank 4. As a result, the chemical liquid in the storage tank 4 is agitated, and the chemical liquid in contact with the processing target surface of the substrate W is agitated. In this embodiment, the upper surface Wu of the substrate W is the processing target surface.

[0098] When a predetermined time has elapsed since the substrate W was immersed in the chemical liquid in the storage tank 4, the control device 10 (controller 11) controls the supply and discharge unit 7 to discharge the chemical liquid from the storage tank 4. Thereafter, the control device 10 (controller 11) controls the supply and discharge unit 7 to store the rinsing liquid in the storage tank 4. As a result, the substrate W is immersed in the rinsing liquid in the storage tank 4.

[0099] The control device 10 (control unit 11) controls the fluid supply unit 6 to eject gas (nitrogen gas) from the ejection unit 5 (ejection port 5a) while the substrate W is immersed in the rinsing liquid in the storage tank 4. As a result, the rinsing liquid in the storage tank 4 is agitated, and the rinsing liquid in contact with the processing target surface of the substrate W is agitated.

[0100] 1 to 3, the substrates W can be processed without rotating the substrates W. Therefore, the configuration of the apparatus is not complicated compared to a configuration in which the substrates W are rotated without rotating the storage tank 4. Therefore, the configuration of a single-wafer type apparatus in which the substrates W are immersed one by one in the processing liquid L and processed one by one can be made simpler.

[0101] Furthermore, if the chemical liquid in contact with the processing surface of the substrate W stagnates without being stirred, the entire processing surface may not be uniformly processed. In other words, processing unevenness may occur. For example, if the chemical liquid in contact with the processing surface stagnates, the amount of reactants (by-reactants) generated by the reaction between the processing object contained in the processing surface and the chemical liquid may vary within the processing surface. If the amount of by-reactants varies, the entire processing surface of the substrate W may not be uniformly processed.

[0102] In contrast, according to the present embodiment, the chemical liquid stored in the storage tank 4 can be agitated. As a result, the chemical liquid in contact with the processing target surface of the substrate W can be agitated, and the occurrence of stagnant portions in the chemical liquid in contact with the processing target surface of the substrate W can be suppressed. Therefore, the entire processing target surface of the substrate W can be uniformly processed. Specifically, the processing target material included in the processing target surface can be uniformly processed over the entire processing target surface.

[0103] Furthermore, according to this embodiment, even if the substrate W includes a pattern PT having a three-dimensional uneven shape on the processing target surface, it is possible to uniformly process the entire processing target surface of the substrate W. For example, when the substrate W (semiconductor wafer) is a substrate used for manufacturing semiconductor products having a three-dimensional structure such as a three-dimensional flash memory (e.g., a three-dimensional NAND flash memory), the substrate W has a pattern PT.

[0104] Here, an example of the substrate W will be described with reference to Figures 4(a) and 4(b). Figure 4(a) is a plan view showing an example of the substrate W processed by the substrate processing apparatus 100 of this embodiment. Specifically, Figure 4(a) shows an enlarged view of a portion of the substrate W. Figure 4(b) is a cross-sectional view showing an example of the substrate W processed by the substrate processing apparatus 100 of this embodiment. Specifically, Figure 4(b) shows a cross-section of the substrate W cut along line IVB-IVB in Figure 4(a). Note that in this embodiment, the upper surface Wu of the substrate W is the processing target surface, and a pattern PT is formed on the upper surface Wu of the substrate W.

[0105] As shown in Fig. 4(a), the substrate W has a pattern PT. The pattern PT includes a plurality of recesses 320. In more detail, as shown in Fig. 4(b), the substrate W has a silicon substrate 310 and a pattern PT formed on the silicon substrate 310.

[0106] 4(b), the pattern PT includes a laminated structure 330 and a plurality of recesses 320. The laminated structure 330 is made of silicon oxide films 331 and silicon nitride films 332 alternately laminated in a thickness direction D1 of the substrate W. Each recess 320 is recessed in the thickness direction D1 of the substrate W from the outermost surface Ws of the substrate W toward the silicon substrate 310. Specifically, each recess 320 penetrates the laminated structure 330. In other words, each recess 320 extends from the outermost surface Ws of the substrate W to the upper surface of the silicon substrate 310.

[0107] The substrate processing by the substrate processing apparatus 100 of this embodiment includes a process of selectively etching the silicon nitride film 332 (processing object) with a chemical liquid. In this case, a liquid containing phosphoric acid may be used as the chemical liquid.

[0108] When the silicon nitride film 332 is etched with a liquid containing phosphoric acid, silicon is produced as a reactant (by-reactant). Silicon dissolves into the chemical solution, but if the chemical solution in contact with the processing target surface of the substrate W stagnates without being stirred, the concentration of the dissolved silicon becomes non-uniform due to the three-dimensional uneven shape of the laminated structure 330. Specifically, the closer to the bottom surface of the recess 320 (the upper surface of the silicon substrate 310), the higher the concentration of silicon. As a result, the etching selectivity between the silicon nitride film 332 and the silicon oxide film 331 is affected.

[0109] In contrast, according to the present embodiment, the chemical liquid in contact with the processing target surface of the substrate W is agitated, and the chemical liquid that has penetrated into the bottom side of the recess 320 is agitated, so that the concentration of the eluted silicon becomes uniform. Therefore, the entire processing target surface of the substrate W can be processed uniformly.

[0110] Furthermore, according to this embodiment, it is possible to agitate the rinsing liquid stored in the storage tank 4. Therefore, while the substrate W is immersed in the rinsing liquid in the storage tank 4, it is possible to agitate the rinsing liquid in contact with the processing target surface of the substrate W. As a result, while the substrate W is immersed in the rinsing liquid in the storage tank 4, the chemical liquid adhering to the substrate W can be washed away by the rinsing liquid.

[0111] Furthermore, according to this embodiment, inert gas is sprayed from the spraying part 5 into the processing liquid L with the inner space 4a of the storage tank 4 being a sealed space or a nearly sealed space. Since the inert gas is released into the space above the liquid surface of the processing liquid L, the atmosphere in the sealed or nearly sealed space above the liquid surface of the processing liquid L becomes an inert gas atmosphere. Therefore, the amount of oxygen absorbed by the processing liquid L in the storage tank 4 can be suppressed, and an increase in the dissolved oxygen concentration of the processing liquid L stored in the storage tank 4 can be suppressed.

[0112] Furthermore, according to this embodiment, for example, a substrate with exposed metal can be processed. Specifically, when the substrate W to be processed is a substrate with exposed metal, since the metal is exposed on the surface of the substrate W, if the dissolved oxygen concentration of the processing liquid L increases, a natural oxide film is formed on the surface of the metal exposed from the substrate W. In contrast, according to this embodiment, an increase in the dissolved oxygen concentration of the processing liquid L is suppressed, so that a natural oxide film is unlikely to form on the surface of the metal exposed from the substrate W.

[0113] Next, the storage tank 4 will be described with reference to Fig. 3. As shown in Fig. 3, the storage tank 4 further has an annular groove 46. The annular groove 46 receives the tip of the clamping member 21 when the substrate holding unit 2 is located at the lower position P2. Therefore, the clamping member 21 does not interfere with the storage tank 4 even if the substrate holding unit 2 moves from the upper position P1 to the lower position P2.

[0114] Specifically, the annular groove 46 is formed on the periphery of the bottom wall 41. In other words, the bottom surface 41a of the bottom wall 41 is recessed in an annular shape on its periphery. The annular groove 46 has a depth that prevents interference between the tip of the clamping member 21 and the bottom surface of the annular groove 46 when the substrate holding unit 2 is located at the lower position P2. In this embodiment, the annular groove 46 is connected to the side wall 42. More specifically, the outer circumferential surface of the annular groove 46 and the inner circumferential surface 42a of the side wall 42 are continuous with each other.

[0115] Next, the storage tank 4 will be described with reference to FIG. 5. FIG. 5 is a cross-sectional view showing the storage tank 4 included in the substrate processing apparatus 100 of this embodiment. As shown in FIG. 5, the volume of the storage tank 4 (the volume of the inner space 4a) may be large enough to process one substrate W. Therefore, the storage tank 4 may be in the shape of a thin container or a thin dish with an open upper surface. For example, the height H1 of the liquid level of the processing liquid L relative to the bottom surface 41a of the storage tank 4 may be, for example, 3 mm or more and 10 mm or less. The thickness of the substrate W (semiconductor wafer) is, for example, 0.775 mm. The diameter D of the inner peripheral surface 42a of the storage tank 4 may be equal to or larger than the diameter of the substrate W (semiconductor wafer). The diameter of the substrate W is, for example, 200 mm or more and 450 mm or less.

[0116] According to the present embodiment, the amount of the processing liquid L stored in the storage tank 4 (the inner space 4a) may be small. Therefore, the amount of the processing liquid L used for substrate processing can be reduced compared to a single-wafer processing apparatus that processes the substrate W by discharging the processing liquid L in a continuous flow from a discharge nozzle.

[0117] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 6. Fig. 6 is a diagram showing the configurations of a storage tank 4 and a fluid supply unit 6 included in the substrate processing apparatus 100 of this embodiment. Fig. 6 shows a cross section of the storage tank 4.

[0118] As shown in Fig. 6, the storage tank 4 may have N1 jetting parts 5. Here, "N1" represents an integer of 2 or more. In other words, the storage tank 4 may have a plurality of jetting parts 5. The fluid supply part 6 supplies gas (nitrogen gas) to the N1 jetting parts 5. Fig. 6 illustrates a storage tank 4 having six jetting parts 5 (first jetting part 51 to sixth jetting part 56).

[0119] The N1 jetting parts 5 may be arranged at equal intervals, for example. By jetting gas (nitrogen gas) from the N1 jetting parts 5 into the processing liquid L stored in the storage tank 4 (inner space 4a), the flow of the processing liquid L generated by the jetting of gas becomes more complex than in a configuration in which the gas is jetted from one location. As a result, stagnant parts are less likely to occur in the processing liquid L stored in the storage tank 4, so that the entire surface of the substrate W to be processed can be uniformly processed.

[0120] In this embodiment, N1 jetting parts 5 are divided into N2 groups. Here, "N2" indicates an integer equal to or less than N1. That is, N1 jetting parts 5 are divided into N1 or less groups. In other words, the multiple jetting parts 5 are divided into groups equal to or less than the number of jetting parts 5. Each group includes at least one jetting part 5. The fluid supply unit 6 controls the supply of gas (nitrogen gas) for each group.

[0121] In detail, the fluid supply unit 6 has fluid pipes 61 and fluid on-off valves 62 provided for each group. Each fluid pipe 61 distributes gas (nitrogen gas) to the jetting unit 5 belonging to the corresponding group. Each fluid on-off valve 62 controls the distribution of gas (nitrogen gas) through the corresponding fluid pipe 61 and the stop of the distribution.

[0122] 6 illustrates a configuration in which six jetting parts 5 (first jetting part 51 to sixth jetting part 56) are divided into three groups. In this case, the fluid supply part 6 may have three fluid pipes 61 (first fluid pipe 61a to third fluid pipe 61c), three fluid on-off valves 62 (first fluid on-off valve 62a to third fluid on-off valve 62c), and three branch pipes (first branch pipe 66a to third branch pipe 66c).

[0123] The first branch pipe 66a distributes gas (nitrogen gas) to the first fluid pipe 61a. The first fluid on-off valve 62a is provided in the first branch pipe 66a and controls the distribution and stop of the gas through the first branch pipe 66a.

[0124] The second branch pipe 66b distributes gas (nitrogen gas) to the second fluid pipe 61b. The second fluid on-off valve 62b is provided in the second branch pipe 66b and controls the distribution and stop of the gas through the second branch pipe 66b.

[0125] The third branch pipe 66c allows the gas (nitrogen gas) to flow to the third fluid pipe 61c. The third fluid on-off valve 62c is provided in the third branch pipe 66c and controls the flow and stop of the gas through the third branch pipe 66c.

[0126] Specifically, when the first fluid on-off valve 62a opens, gas (nitrogen gas) flows from the first branch pipe 66a to the first fluid pipe 61a. As a result, gas (nitrogen gas) flows from the first branch pipe 66a to the first fluid pipe 61a. That is, gas (nitrogen gas) is supplied from the first branch pipe 66a to the first fluid pipe 61a. Similarly, when the second fluid on-off valve 62b opens, gas (nitrogen gas) is supplied from the second branch pipe 66b to the second fluid pipe 61b. When the third fluid on-off valve 62c opens, gas (nitrogen gas) is supplied from the third branch pipe 66c to the third fluid pipe 61c.

[0127] When the first fluid on-off valve 62a is closed, the flow of gas (nitrogen gas) through the first branch pipe 66a is stopped. As a result, the supply of gas (nitrogen gas) to the first fluid pipe 61a is stopped. Similarly, when the second fluid on-off valve 62b is closed, the supply of gas (nitrogen gas) to the second fluid pipe 61b is stopped. When the third fluid on-off valve 62c is closed, the supply of gas (nitrogen gas) to the third fluid pipe 61c is stopped.

[0128] Next, the multiple jetting parts 5 will be described. As shown in Fig. 6, each group may include jetting parts 5 facing each other. By including jetting parts 5 facing each other in each group, gas (nitrogen gas) is jetted simultaneously or approximately simultaneously from the jetting parts 5 facing each other. As a result, stagnation parts are less likely to occur in the processing liquid L stored in the storage tank 4.

[0129] In the example shown in FIG. 6, the first jetting portion 51 and the fourth jetting portion 54 face each other, the second jetting portion 52 and the fifth jetting portion 55 face each other, and the third jetting portion 53 and the sixth jetting portion 56 face each other.

[0130] The first fluid pipe 61a distributes the gas (nitrogen gas) that has flowed into the first fluid pipe 61a from the first branch pipe 66a to the first jetting part 51 and the fourth jetting part 54. As a result, the gas (nitrogen gas) is jetted out from the first jetting part 51 and the fourth jetting part 54 simultaneously or approximately simultaneously.

[0131] The second fluid pipe 61b distributes the gas (nitrogen gas) that has flowed into the second fluid pipe 61b from the second branch pipe 66b to the second jetting part 52 and the fifth jetting part 55. As a result, the gas (nitrogen gas) is jetted out from the second jetting part 52 and the fifth jetting part 55 simultaneously or approximately simultaneously.

[0132] The third fluid pipe 61c distributes the gas (nitrogen gas) that has flowed into the third fluid pipe 61c from the third branch pipe 66c to the third jetting part 53 and the sixth jetting part 56. As a result, the nitrogen gas is jetted out from the third jetting part 53 and the sixth jetting part 56 simultaneously or approximately simultaneously.

[0133] Next, the opening and closing timings of the fluid on-off valves 62 provided for each group will be described with reference to Fig. 6 and Fig. 7. Fig. 7 is a diagram showing the opening and closing timings of the fluid on-off valves 62 provided for each group. In detail, Fig. 7 shows the opening and closing timings of each of the first fluid on-off valve 62a to the third fluid on-off valve 62c. In Fig. 7, the horizontal axis indicates time.

[0134] The control device 10 (control unit 11) controls the fluid supply unit 6 to switch the period for ejecting gas for each group when stirring the processing liquid L. Specifically, the control device 10 (control unit 11) controls each fluid on-off valve 62 provided for each group so that the fluid on-off valves 62 are in an open state for periods different from each other.

[0135] 7, when the control device 10 (control unit 11) opens the first fluid on-off valve 62a from time t1 to time t2, the control unit 10 closes the second fluid on-off valve 62b and the third fluid on-off valve 62c from time t1 to time t2. Similarly, when the control device 10 (control unit 11) opens the second fluid on-off valve 62b from time t2 to time t3, the control unit 10 closes the first fluid on-off valve 62a and the third fluid on-off valve 62c from time t2 to time t3, and when the control device 10 opens the third fluid on-off valve 62c from time t3 to time t4, the control unit 11 closes the first fluid on-off valve 62a and the second fluid on-off valve 62b from time t3 to time t4.

[0136] Moreover, the control device 10 (control unit 11) controls each of the fluid on-off valves 62 provided for each group so that the fluid on-off valves 62 are opened and closed sequentially in a predetermined order.

[0137] 7, the control device 10 (control unit 11) may open the first fluid on-off valve 62a, the second fluid on-off valve 62b, and the third fluid on-off valve 62c in this order. Specifically, the first fluid on-off valve 62a may be opened from time t1 to time t2, the second fluid on-off valve 62b may be opened from time t2 to time t3, the third fluid on-off valve 62c may be opened from time t3 to time t4, the first fluid on-off valve 62a may be opened from time t4 to time t5, the second fluid on-off valve 62b may be opened from time t5 to time t6, and the third fluid on-off valve 62c may be opened from time t6 to time t7.

[0138] According to the present embodiment, since the gas is ejected at different timing for each group, the flow of the treatment liquid L generated by the ejection of the gas becomes more complex compared to a configuration in which the gas is ejected continuously from all the ejection parts 5. As a result, stagnant parts are less likely to occur in the treatment liquid L stored in the storage tank 4.

[0139] Moreover, according to the present embodiment, since the gas is sequentially ejected in a predetermined order for each groove, it is difficult for a bias to occur in the period during which the gas is ejected among the plurality of ejection parts 5. Therefore, stagnation parts are unlikely to occur in the treatment liquid L stored in the storage tank 4.

[0140] Furthermore, when substrate processing is performed using a chemical liquid at a temperature higher than room temperature, if gas is continuously ejected from all of the ejection parts 5, the temperature of the chemical liquid may be lowered in the area near each of the ejection parts 5 by the gas ejected from each of the ejection parts 5. As a result, the progress of substrate processing in the area near each of the ejection parts 5 may be slower than in other areas. In other words, if gas is continuously ejected from all of the ejection parts 5, temperature unevenness may occur in the chemical liquid stored in the storage tank 4, causing processing unevenness within the surface of the substrate W to be processed.

[0141] For example, when etching is performed using TMAH, TMAH heated to 40° C. is used. When the temperature of TMAH is lower than 40° C., the etching rate of TMAH decreases. Therefore, if nitrogen gas at room temperature is continuously ejected from all the ejection parts 5, the etching may proceed more slowly in the areas near each ejection part 5 than in other areas.

[0142] In contrast, according to this embodiment, gas is intermittently ejected from each ejection part 5, so that temperature unevenness is unlikely to occur in the chemical liquid stored in the storage tank 4. Therefore, the entire processing surface of the substrate W can be uniformly processed.

[0143] The number of the jetting parts 5 is not limited to six. The storage tank 4 may have two or more jetting parts 5.

[0144] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 8(a) and 8(b). Figure 8(a) is a developed view of the side wall 42 of the storage tank 4 included in the substrate processing apparatus 100 of this embodiment. In detail, Figure 8(a) shows the side wall 42 of the storage tank 4 shown in Figure 6 in an expanded view. Note that Figure 8(a) omits the outlet 44 described with reference to Figures 2 and 3.

[0145] As shown in FIG. 8(a), the heights H2 from the bottom surface 41a (see FIG. 3) of the multiple jetting parts 5 (first jetting part 51 to sixth jetting part 56) are the same or approximately the same.

[0146] As shown in Fig. 8(a), each of the jetting parts 5 (first jetting part 51 to sixth jetting part 56) may have one jetting outlet 5a. In this case, the heights of the multiple jetting outlets 5a from the bottom surface 41a (see Fig. 3) are the same or approximately the same.

[0147] Fig. 8(b) is an enlarged view of a portion of the substrate processing apparatus 100 of this embodiment. As shown in Fig. 8(b), the ejection unit 5 (ejection port 5a) ejects gas (nitrogen gas) in a direction parallel to the upper surface Wu of the substrate W. As a result, the gas flows in a direction parallel to the upper surface Wu of the substrate W (surface to be processed). More specifically, the gas flows along the upper surface Wu of the substrate W (surface to be processed). In other words, the ejection unit 5 (ejection port 5a) is provided at a position where the gas is ejected along the upper surface Wu of the substrate W.

[0148] According to this embodiment, the gas flows along the upper surface Wu (surface to be processed) of the substrate W, so that the chemical liquid in contact with the surface to be processed of the substrate W can be agitated more reliably.

[0149] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 9. Fig. 9 is a diagram showing the flow of operation of the substrate processing apparatus 100 of this embodiment. In detail, Fig. 9 shows the flow of processing executed by the control unit 11. The processing shown in Fig. 9 starts when a substrate W is loaded into the processing chamber 201.

[0150] As shown in FIG. 9, the control unit 11 controls the center robot CR to load the substrate W into the processing chamber 201, and then controls the substrate holding unit 2 to perform a transfer process to transfer the substrate W from the center robot CR to the substrate holding unit 2 (step S1).

[0151] Specifically, when the substrate W is carried into the processing chamber 201, the substrate holding part 2 is located at the upper position P1. Also, the clamping parts 22 of each clamping member 21 are located at the open position. The center robot CR transports the substrate W to a transfer position where the substrate W is handed over to the substrate holding part 2. The control part 11 controls the drive mechanism 23 of the substrate holding part 2 to rotate each clamping member 21 and move each clamping part 22 from the open position to the gripping position. As a result, the substrate W is gripped by each clamping part 22 and held in a horizontal position.

[0152] When the substrate W is transferred from the center robot CR to the substrate holder 2, the control unit 11 controls the supply and discharge unit 7 to supply the chemical liquid into the storage tank 4 (inner space 4a) (step S2). When a predetermined time (chemical liquid supply time) has elapsed since the start of the supply of the chemical liquid, the control unit 11 controls the supply and discharge unit 7 to stop the supply of the chemical liquid. As a result, a predetermined amount of the chemical liquid is stored in the storage tank 4.

[0153] Once the chemical liquid is stored in the storage tank 4, substrate processing is performed with the chemical liquid (step S3). In detail, the control unit 11 controls the lifting mechanism 34 of the moving unit 30 to move the substrate holding unit 2 from the upper position P1 to the lower position P2. As a result, the substrate W is immersed in the chemical liquid in the storage tank 4 (step S3a).

[0154] When the substrate W is immersed in the chemical liquid in the storage tank 4, the control unit 11 agitates the chemical liquid in the storage tank 4 (step S3b). In detail, the control unit 11 opens the fluid on-off valve 62 of the fluid supply unit 6 to eject gas (nitrogen gas) from the ejection unit 5. As a result, the chemical liquid in the storage tank 4 is agitated.

[0155] When a predetermined time has elapsed since the control unit 11 started stirring the chemical liquid, the control unit 11 closes the fluid on-off valve 62 of the fluid supply unit 6. As a result, the gas (nitrogen gas) stops being ejected from the ejection unit 5, and the substrate processing with the chemical liquid (step S3) is completed.

[0156] After performing the substrate processing with the chemical liquid, the control unit 11 controls the supply and discharge unit 7 to discharge the chemical liquid from the storage tank 4 (step S4). When a predetermined time (chemical liquid discharge time) has elapsed since the control unit 11 started discharging the chemical liquid, the control unit 11 controls the supply and discharge unit 7 to stop discharging the chemical liquid. As a result, the chemical liquid discharge process (step S4) is completed.

[0157] After completing the discharge process of the chemical liquid, the control unit 11 executes a rinsing process (step S5). More specifically, the control unit 11 controls the supply and discharge unit 7 to supply the rinsing liquid into the storage tank 4. As a result, the substrate W is immersed in the rinsing liquid. After the substrate W is immersed in the rinsing liquid, the control unit 11 agitates the rinsing liquid in the storage tank 4.

[0158] In detail, when a predetermined time has elapsed since the start of supply of the rinsing liquid, the control unit 11 opens the fluid on-off valve 62 of the fluid supply unit 6 to cause the gas (nitrogen gas) to be ejected from the ejection unit 5. As a result, the rinsing liquid in the storage tank 4 is agitated.

[0159] The control unit 11 continues to supply the rinsing liquid during the rinsing process. Therefore, during the rinsing process, the rinsing liquid overflows from the outlet 44 of the storage tank 4. The rinsing liquid overflowing from the outlet 44 is drained by the drain unit 8.

[0160] The control unit 11 ends the rinsing process when a predetermined time (rinsing time) has elapsed since the start of stirring the rinsing liquid. Specifically, the control unit 11 controls the supply and discharge unit 7 to stop the supply of the rinsing liquid to the storage tank 4. The control unit 11 also closes the fluid on-off valve 62 of the fluid supply unit 6 to stop the ejection of the gas (nitrogen gas). As a result, the rinsing process (step S5) ends.

[0161] After the rinsing process is performed, the control unit 11 controls the supply and discharge unit 7 to discharge the rinsing liquid from the storage tank 4 (step S6). When a predetermined time has elapsed since the control unit 11 started discharging the rinsing liquid, the control unit 11 controls the supply and discharge unit 7 to stop discharging the rinsing liquid. As a result, the discharge process of the rinsing liquid (step S6) ends.

[0162] After performing the draining process of the rinsing liquid, the control unit 11 performs a drying process (step S7). Specifically, the control unit 11 opens the fluid on-off valves 62 of the fluid supply unit 6 to cause the gas (nitrogen gas) to be ejected from the ejection units 5. As a result, the gas is sprayed onto the substrate W to dry the substrate W. Specifically, the control unit 11 opens all the fluid on-off valves 62 included in the fluid supply unit 6 to cause the gas (nitrogen gas) to be ejected from all the ejection units 5 included in the storage tank 4.

[0163] After the drying process is performed, the control unit 11 controls the center robot CR to unload the substrate W from the processing chamber 201 (step S8). As a result, the process shown in FIG.

[0164] In detail, the control unit 11 controls the lifting mechanism 34 of the moving unit 30 to move the substrate holding unit 2 to the upper position P1, and then causes the center robot CR to grip the substrate W. After the center robot CR grips the substrate W, the control unit 11 controls the drive mechanism 23 of the substrate holding unit 2 to rotate each clamping member 21 and move each clamping unit 22 from the gripping position to the release position. As a result, the substrate W is handed over from the substrate holding unit 2 to the center robot CR.

[0165] When the substrate W is handed over to the center robot CR, the control unit 11 causes the center robot CR to leave the processing chamber 201. As a result, the substrate W is unloaded from the processing chamber 201.

[0166] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 10 to 13, 14(a) and 14(b).

[0167] Fig. 10 is a diagram showing the substrate processing apparatus 100 when supplying a chemical liquid to the storage tank 4. In other words, Fig. 10 shows the substrate processing apparatus 100 when performing the process of step S2 shown in Fig. 9.

[0168] As shown in Fig. 10, when supplying the chemical liquid to the storage tank 4, the control device 10 (controller 11) opens the chemical liquid on-off valve 75 and the first on-off valve VA1, and closes the second on-off valve VA2 and the rinse liquid on-off valve 76. As a result, the chemical liquid flows from the chemical liquid piping 72 into the common piping 71, and is supplied from the common piping 71 to the inner space 4a via the supply and discharge port 43. When a predetermined time has elapsed since the start of the supply of the chemical liquid, the control device 10 (controller 11) transitions the chemical liquid on-off valve 75 and the first on-off valve VA1 from the open state to the closed state. As a result, the chemical liquid is stored in the storage tank 4.

[0169] Fig. 11 is a diagram showing the substrate processing apparatus 100 when discharging the chemical liquid from the storage tank 4. In other words, Fig. 11 shows the substrate processing apparatus 100 when performing the process of step S4 shown in Fig. 9.

[0170] As shown in Fig. 11, when discharging the chemical liquid from the storage tank 4, the control device 10 (controller 11) opens the first on-off valve VA1 to the third on-off valve VA3 and closes the chemical liquid on-off valve 75 and the rinsing liquid on-off valve 76. Then, the control device 10 (controller 11) drives the ejector 77. As a result, the chemical liquid in the storage tank 4 is discharged from the supply and discharge port 43 to the common pipe 71. The chemical liquid discharged to the common pipe 71 flows from the common pipe 71 through the ejector 77 into the first discharge pipe 74. As a result, the chemical liquid is discharged.

[0171] Incidentally, when discharging the rinsing liquid from the storage tank 4, the control device 10 (controller 11) similarly opens the first on-off valve VA1 to the third on-off valve VA3 and closes the chemical liquid on-off valve 75 and the rinsing liquid on-off valve 76. Then, the control device 10 (controller 11) drives the ejector 77. As a result, the rinsing liquid is discharged from the storage tank 4 in the same manner as the chemical liquid.

[0172] 12 is a diagram illustrating the substrate processing apparatus 100 during the rinsing process, ie, when performing the process of step S5 shown in FIG.

[0173] 12, when the rinsing process is performed, the control device 10 (control unit 11) opens the fluid on-off valve 62 of the fluid supply unit 6. Therefore, the rinsing liquid is agitated during the rinsing process.

[0174] During the rinsing process, the control device 10 (control section 11) opens the rinsing liquid on-off valve 76, the first on-off valve VA1 and the second on-off valve VA2, closes the chemical liquid on-off valve 75 and the third on-off valve VA3, and opens the discharge on-off valve 82 of the discharge section 8. Therefore, during the rinsing process, the rinsing liquid is constantly supplied into the storage tank 4, and the rinsing liquid overflowing from the outlet 44 of the storage tank 4 is drained.

[0175] In detail, the rinsing liquid flows from the rinsing liquid pipe 73 into the common pipe 71, and is supplied from the common pipe 71 to the inner space 4a via the supply and discharge port 43. The rinsing liquid overflowing from the outlet 44 is received by the liquid receiving portion 45. The rinsing liquid received by the liquid receiving portion 45 is drained via the second discharge pipe 81.

[0176] Fig. 13 is a diagram showing the substrate processing apparatus 100 when drying the substrate W. In other words, Fig. 13 shows the substrate processing apparatus 100 when performing the process of step S7 shown in Fig. 9. Fig. 14(a) is a diagram showing the substrate W located at the first stop position SP1 during the drying process. Fig. 14(b) is a diagram showing the substrate W located at the second stop position SP2 during the drying process.

[0177] 13, when drying the substrate W, the control device 10 (control unit 11) opens the fluid on-off valve 62 of the fluid supply unit 6 to cause the ejection unit 5 to eject gas (nitrogen gas) into the inner space 4a of the storage tank 4. As a result, the gas is sprayed onto the substrate W, and the substrate W is dried.

[0178] In this embodiment, as shown in FIGS. 14(a) and 14(b), the control device 10 (controller 11) dries the lower surface Wd of the substrate W after drying the upper surface Wu of the substrate W.

[0179] 14(a), the control device 10 (control unit 11) controls the lifting mechanism 34 of the moving unit 30 to stop the substrate W at a first stop position SP1. The first stop position SP1 indicates a position where the gas (nitrogen gas) ejected from the ejection unit 5 flows along the upper surface Wu of the substrate W. By stopping the substrate W at the first stop position SP1, the upper surface Wu of the substrate W is dried. In this embodiment, the first stop position SP1 is the same position as the lower position P2.

[0180] As shown in FIG. 14(b), when a predetermined time (first stop time) has elapsed since the start of the drying process, the control device 10 (control unit 11) controls the lifting mechanism 34 of the moving unit 30 to move the substrate W from the first stop position SP1 to the second stop position SP2.

[0181] The second stop position SP2 is a position higher than the first stop position SP1. More specifically, the second stop position SP2 indicates a position where the gas (nitrogen gas) ejected from the ejection unit 5 flows along the lower surface Wd of the substrate W. By stopping the substrate W at the second stop position SP2, the lower surface Wd of the substrate W is dried.

[0182] When a predetermined time (second stop time) has elapsed since the substrate W was stopped at the second stop position SP2, the control device 10 (control unit 11) controls the lifting mechanism 34 of the moving unit 30 to move the substrate holding unit 2 to the upper position P1.

[0183] The first embodiment of the present invention has been described above with reference to Figures 1 to 13, 14(a) and 14(b). As already described, according to this embodiment, the configuration of a single-wafer processing apparatus in which substrates W are immersed one by one in processing liquid L to process the substrates W one by one can be made simpler.

[0184] Furthermore, according to this embodiment, the substrate W can be processed while the substrate holding part 2 is still holding the substrate W. Therefore, there is no need to transfer the substrate W between the substrate holding part 2 and the storage tank 4. This makes it possible to simplify the configuration of a single-wafer type apparatus in which the substrates W are immersed one by one in the processing liquid L to process the substrates W one by one.

[0185] In this embodiment, the diameters of the nozzles 5a are the same or approximately the same, but the diameters of the nozzles 5a may be different from each other, or the diameters of the nozzles 5a may be different between groups. That is, the diameters of some nozzles 5a may be different from the diameters of the other nozzles 5a.

[0186] Since the diameter of at least some of the jetting ports 5a is different from the diameter of the other jetting ports 5a, the flow of the processing liquid L generated by the jetting of gas becomes complex. As a result, stagnant parts are less likely to occur in the processing liquid L stored in the storage tank 4, so that the entire processing target surface of the substrate W can be uniformly processed. For example, when the diameters of all the jetting ports 5a are different from one another, the flow rate of the gas jetted from the jetting ports 5a (the amount of gas jetted per unit time) differs for each jetting port 5a, so that the flow of the processing liquid L becomes more complex and stagnant parts are less likely to occur in the processing liquid L.

[0187] In addition, in this embodiment, the upper surface Wu of the substrate W is the surface to be processed, but the lower surface Wd of the substrate W may be the surface to be processed. When the lower surface Wd of the substrate W is the surface to be processed, the control device 10 (control unit 11) may control the lifting mechanism 34 of the moving unit 30 to move the substrate holding unit 2 to a position where the gas (nitrogen gas) ejected from the ejection unit 5 flows along the lower surface Wd of the substrate W. In other words, the control device 10 (control unit 11) may control the moving unit 30 to move the substrate W to a position corresponding to the position where the ejection unit 5 is provided and the direction in which the surface to be processed of the substrate W faces. Alternatively, the ejection unit 5 (ejection port 5a) may be provided at a position where the gas flows along the lower surface Wd of the substrate W.

[0188] Furthermore, in this embodiment, after the chemical liquid is stored in the storage tank 4, the substrate holding part 2 is moved from the upper position P1 to the lower position P2 and the substrate W is immersed in the chemical liquid, but the chemical liquid may be stored in the storage tank 4 after the substrate holding part 2 is moved from the upper position P1 to the lower position P2 and the substrate W may be immersed in the chemical liquid.

[0189] In addition, in this embodiment, the N1 jetting parts 5 are divided into N2 groups, and the gas jetting is controlled for each group, but one fluid on-off valve 62 may be provided for the N1 (plural) jetting parts 5. In this case, when one fluid on-off valve 62 is opened, gas is jetted from the N jetting parts 5 simultaneously or approximately simultaneously.

[0190] In addition, in this embodiment, the substrate W is stopped at the first stop position SP1 and the second stop position SP2 during the drying process, but the control device 10 (control unit 11) may also control the lifting mechanism 34 to lift the substrate W at a low speed during the drying process.

[0191] In addition, in this embodiment, the gas jetting is stopped when the rinsing liquid is discharged from the storage tank 4, but the gas may be jetted from the jetting part 5 when the rinsing liquid is discharged. By jetting the gas from the jetting part 5 when the rinsing liquid is discharged, the drying process of the substrate W can be started from the timing when the liquid level of the rinsing liquid drops and the upper surface Wu of the substrate W is exposed from the liquid level of the rinsing liquid.

[0192] In addition, in this embodiment, one ejection port 5a is provided in each ejection part 5, but each ejection part 5 may have multiple ejection ports 5a. Hereinafter, another example of the ejection part 5 will be described with reference to Fig. 15(a) and Fig. 15(b).

[0193] Fig. 15(a) is a diagram showing another example 1 of the jetting part 5. In detail, Fig. 15(a) shows an expanded side wall 42 of the storage tank 4. Note that Fig. 15(a) omits the outlet 44 described with reference to Figs. 2 and 3.

[0194] As shown in Fig. 15(a), each jetting unit 5 may have three jetting ports 5a arranged side by side in the vertical direction. In this case, for example, the middle jetting port 5a of the three jetting ports 5a may be provided at a position for jetting gas along the processing surface of the substrate W. Although each jetting unit 5 shown in Fig. 15(a) has three jetting ports 5a, each jetting unit 5 may have three or four or more jetting ports 5a arranged side by side in the vertical direction.

[0195] FIG. 15(b) is a diagram showing another example 2 of the jetting part 5. In detail, FIG. 15(b) shows the side wall 42 of the storage tank 4 in an expanded state. Note that FIG. 15(b) omits the outlet 44 described with reference to FIG. 2 and FIG. 3. As shown in FIG. 15(b), each jetting part 5 may have a number of jetting ports 5a. The multiple jetting ports 5a may be arranged at equal intervals within a certain rectangular area. For example, each jetting part 5 may be in the form of a punched metal or a mesh.

[0196] [Embodiment 2] Next, a second embodiment of the present invention will be described with reference to Fig. 16. However, differences from the first embodiment will be described, and a description of the same things as in the first embodiment will be omitted. The second embodiment differs from the first embodiment in the configuration of the fluid supply unit 6.

[0197] Fig. 16 is a diagram showing the configuration of the storage tank 4 and the fluid supply unit 6 included in the substrate processing apparatus 100 of the present embodiment. Fig. 16 shows a cross section of the storage tank 4. In the present embodiment, the flow rate of gas ejected from at least some of the ejection units 5 (the amount of gas ejected per unit time) is different from the flow rate of gas ejected from the other ejection units 5.

[0198] 16, the fluid supply unit 6 included in the substrate processing apparatus 100 of this embodiment further includes at least one flow rate adjustment valve 63. The flow rate adjustment valve 63 adjusts the flow rate of the gas flowing through the fluid piping 61 (the amount of gas flowing per unit time). By adjusting the flow rate of the gas flowing through the fluid piping 61 with the flow rate adjustment valve 63, the flow rate of the gas sprayed from the spray unit 5 is adjusted.

[0199] For example, the opening degree of the flow rate regulating valve 63 may be adjustable. In this case, the flow rate of the gas flowing through the fluid pipe 61 can be adjusted by adjusting the opening degree of the flow rate regulating valve 63.

[0200] The flow rate adjustment valve 63 may be controlled by the control device 10 (control unit 11). In this case, the control device 10 (control unit 11) controls the flow rate adjustment valve 63 to adjust the flow rate of the gas flowing through the fluid piping 61. As a result, the flow rate of the gas ejected from the ejection unit 5 is adjusted.

[0201] 16, the fluid supply unit 6 has fluid pipes 61, fluid on-off valves 62, and flow rate adjustment valves 63 provided for each group. Each flow rate adjustment valve 63 adjusts the flow rate of gas flowing through the corresponding fluid pipe 61. As a result, the flow rate of gas ejected from the corresponding ejection unit 5 is adjusted. Hereinafter, the flow rate of gas ejected from the ejection unit 5 may be referred to as the "ejection flow rate."

[0202] 16 illustrates a configuration in which six jetting parts 5 (first jetting part 51 to sixth jetting part 56) are divided into three groups. In this case, the fluid supply part 6 may have three fluid pipes 61 (first fluid pipe 61a to third fluid pipe 61c), three fluid on-off valves 62 (first fluid on-off valve 62a to third fluid on-off valve 62c), three flow rate adjustment valves 63 (first flow rate adjustment valve 63a to third flow rate adjustment valve 63c), and three branch pipes (first branch pipe 66a to third branch pipe 66c).

[0203] The first flow rate adjustment valve 63a is provided in the first branch pipe 66a and adjusts the flow rate of the gas flowing through the first branch pipe 66a. For example, the first flow rate adjustment valve 63a may be disposed upstream of the first fluid on-off valve 62a. The first flow rate adjustment valve 63a adjusts the flow rate of the gas flowing through the first branch pipe 66a, thereby adjusting the flow rate of the gas flowing from the first branch pipe 66a to the first fluid pipe 61a. As a result, the flow rates (ejection flow rates) of the gas ejected from the first ejection part 51 and the fourth ejection part 54 are adjusted.

[0204] The second flow rate adjustment valve 63b is provided in the second branch pipe 66b and adjusts the flow rate of the gas flowing through the second branch pipe 66b. For example, the second flow rate adjustment valve 63b may be disposed upstream of the second fluid on-off valve 62b. As with the first flow rate adjustment valve 63a, the second flow rate adjustment valve 63b adjusts the flow rate of the gas flowing through the second branch pipe 66b, thereby adjusting the flow rate (ejection flow rate) of the gas ejected from the second ejection part 52 and the fifth ejection part 55.

[0205] The third flow rate control valve 63c is provided in the third branch pipe 66c and adjusts the flow rate of the gas flowing through the third branch pipe 66c. For example, the third flow rate control valve 63c may be disposed upstream of the third fluid on-off valve 62c. As with the first flow rate control valve 63a, the third flow rate control valve 63c adjusts the flow rate of the gas flowing through the third branch pipe 66c, thereby adjusting the flow rate (ejection flow rate) of the gas ejected from the third ejection part 53 and the sixth ejection part 56.

[0206] The second embodiment of the present invention has been described above with reference to Fig. 16. According to the second embodiment, different jet flow rates can be set for each group. By setting different jet flow rates for each group, the flow of the processing liquid L generated by the jetting of gas becomes more complex than when the same jet flow rates are set for the groups. As a result, stagnant portions are less likely to occur in the processing liquid L stored in the storage tank 4, so that the entire processing target surface of the substrate W can be uniformly processed. Note that different jet flow rates may be set for all groups, or the jet flow rates of some groups may be set to jet flow rates different from those of the other groups.

[0207] [Embodiment 3] Next, a third embodiment of the present invention will be described with reference to Fig. 17. However, differences from the first and second embodiments will be described, and a description of the same matters as the first and second embodiments will be omitted. The third embodiment differs from the first and second embodiments in the configuration of the jetting part 5.

[0208] FIG. 17 is a diagram showing the configuration of the storage tank 4 included in the substrate processing apparatus 100 of this embodiment. FIG. 17 shows a cross section of the storage tank 4. As shown in FIG. 17, in this embodiment, each jetting part 5 jets gas in a direction oblique to the horizontal direction from itself toward a position CP facing the center position of the substrate W. Hereinafter, the position CP facing the center position of the substrate W may be referred to as the "center position CP," and the horizontal direction from the jetting part 5 toward the center position CP may be referred to as the "center direction." In addition, the direction in which gas is jetted from the jetting part 5 may be referred to as the "jetting direction R," and the angle of the jetting direction R with respect to the center direction may be referred to as the "jetting angle θ." In addition, the jetting direction R may indicate a direction along a horizontal plane.

[0209] In this embodiment, the ejection angle θ of at least a part of the ejection parts 5 is different from the ejection angle θ of the other ejection parts 5. For example, the ejection angle θ may be different for each ejection part 5, or the ejection angle θ of some of the ejection parts 5 may be different from the ejection angle θ of the other ejection parts 5.

[0210] Above, the third embodiment of the present invention has been described with reference to Fig. 17. According to the third embodiment, the jetting angle θ of at least a part of the jetting parts 5 is different from the jetting angle θ of the other jetting parts 5, so that the flow of the treatment liquid L generated by the jetting of gas becomes even more complicated. As a result, stagnation parts are even less likely to occur in the treatment liquid L stored in the storage tank 4.

[0211] [Embodiment 4] Next, a fourth embodiment of the present invention will be described with reference to Fig. 18. However, differences from the first to third embodiments will be described, and explanations of the same matters as the first to third embodiments will be omitted. The fourth embodiment differs from the first to third embodiments in the configuration of the supply and discharge section 7. More specifically, in the fourth embodiment, the chemical solution is recovered by a recovery section 9. Hereinafter, the ejector 77 included in the supply and discharge section 7 may be referred to as a "first ejector 77".

[0212] Fig. 18 is a cross-sectional view that illustrates a schematic configuration of the substrate processing section 200 included in the substrate processing apparatus 100 of this embodiment. In detail, Fig. 18 illustrates the substrate processing section 200 when the substrate holding section 2 is located at the lower position P2.

[0213] As shown in FIG. 18, in this embodiment, the supply and discharge unit 7 includes a common pipe 71, a chemical liquid pipe 72, a rinsing liquid pipe 73, a first discharge pipe 74, a chemical liquid on-off valve 75, a rinsing liquid on-off valve 76, a first ejector 77, first on-off valves VA1 to VA4, and a recovery unit 9.

[0214] The first on-off valve VA1 to the fourth on-off valve VA4 are provided in the common pipe 71. Of the first on-off valve VA1 to the fourth on-off valve VA4, the first on-off valve VA1 is closest to the supply and discharge port 43. Of the first on-off valve VA1 to the fourth on-off valve VA4, the fourth on-off valve VA4 is farthest from the supply and discharge port 43. The second on-off valve VA2 and the third on-off valve VA3 are provided between the first on-off valve VA1 and the fourth on-off valve VA4. The second on-off valve VA2 is provided at a position closer to the first on-off valve VA1 than the third on-off valve VA3. The first on-off valve VA1 to the fourth on-off valve VA4 are opened and closed under the control of the control device 10 (control unit 11).

[0215] The downstream end of the chemical liquid piping 72 is connected to the common piping 71 between the second on-off valve VA2 and the third on-off valve VA3. When opening the chemical liquid on-off valve 75 to supply the chemical liquid to the storage tank 4, the control device 10 (control unit 11) opens the first on-off valve VA1 and the second on-off valve VA2 and closes the rinse liquid on-off valve 76 and the third on-off valve VA3.

[0216] The rinsing liquid piping 73 is connected to the common piping 71 between the third on-off valve VA3 and the fourth on-off valve VA4. When the rinsing liquid on-off valve 76 is opened to supply the rinsing liquid to the storage tank 4, the control device 10 (control unit 11) opens the first on-off valve VA1 to the third on-off valve VA3 and closes the chemical liquid on-off valve 75 and the fourth on-off valve VA4.

[0217] The control device 10 (controller 11) drives the first ejector 77 when discharging the rinsing liquid from the storage tank 4. When driving the first ejector 77, the control device 10 (controller 11) opens the first on-off valve VA1 to the fourth on-off valve VA4 and closes the chemical liquid on-off valve 75 and the rinsing liquid on-off valve 76.

[0218] The recovery unit 9 is controlled by a control device 10 (control unit 11). The recovery unit 9 recovers the chemical liquid discharged from the storage tank 4. The chemical liquid recovered by the recovery unit 9 is sent to the fluid cabinet 101 described with reference to FIG. 1 and recovered in the fluid cabinet 101. Specifically, the recovery unit 9 has a second ejector 91 and a recovery pipe 92.

[0219] The recovery pipe 92 is a tubular member through which the chemical liquid flows. The second ejector 91 is provided in the common pipe 71. More specifically, the second ejector 91 is provided between the first on-off valve VA1 and the second on-off valve VA2. The upstream end of the recovery pipe 92 is connected to the second ejector 91. Therefore, the upstream end of the recovery pipe 92 is connected to the common pipe 71 via the second ejector 91. In other words, the recovery pipe 92 communicates with the common pipe 71 via the second ejector 91.

[0220] The control device 10 (control unit 11) drives the second ejector 91 when discharging the chemical solution from the storage tank 4. The high-pressure fluid that drives the second ejector 91 is an inert gas. For example, the high-pressure fluid that drives the second ejector 91 may be nitrogen gas.

[0221] When driving the second ejector 91, the control device 10 (control unit 11) opens the first on-off valve VA1 and closes the second on-off valve VA2, the chemical liquid on-off valve 75, and the rinse liquid on-off valve 76. When the second ejector 91 is driven, the chemical liquid in the storage tank 4 is sucked into the common pipe 71 via the supply and discharge port 43. The chemical liquid sucked into the common pipe 71 is sucked into the second ejector 91 via the common pipe 71, and then sent from the second ejector 91 to the recovery pipe 92. The chemical liquid sent to the recovery pipe 92 is recovered in the fluid cabinet 101.

[0222] The fourth embodiment of the present invention has been described above with reference to Fig. 18. According to the fourth embodiment, it is possible to recover the chemical liquid in a single-wafer type apparatus in which the substrates W are immersed in the processing liquid L one by one to process the substrates W one by one.

[0223] [Embodiment 5] Next, a fifth embodiment of the present invention will be described with reference to Fig. 19 and Fig. 20. However, differences from the first to fourth embodiments will be described, and a description of the same matters as the first to fourth embodiments will be omitted. The fifth embodiment differs from the first to fourth embodiments in the configuration of the supply and discharge section 7.

[0224] Specifically, in the fifth embodiment, the supply and discharge unit 7 supplies a first chemical liquid, a second chemical liquid, and a rinsing liquid to the storage tank 4. The first chemical liquid is, for example, DHF (dilute hydrofluoric acid), and the second chemical liquid is, for example, TMAH. The DHF is used in a process for removing a natural oxide film formed on the surface of the substrate W. The TMAH is used in an etching process for a polysilicon layer included in the substrate W.

[0225] Fig. 19 is a cross-sectional view that illustrates a schematic configuration of the substrate processing section 200 included in the substrate processing apparatus 100 of this embodiment. In detail, Fig. 19 illustrates the substrate processing section 200 when the substrate holding section 2 is located at the lower position P2.

[0226] As shown in FIG. 19, in this embodiment, the supply and discharge unit 7 includes a common pipe 71, a first chemical liquid pipe 72a, a second chemical liquid pipe 72b, a rinsing liquid pipe 73, a first discharge pipe 74, a first chemical liquid on-off valve 75a, a second chemical liquid on-off valve 75b, a heater 75c, a rinsing liquid on-off valve 76, a first ejector 77, first on-off valves VA1 to VA5, and a recovery unit 9.

[0227] Common pipe 71, first chemical liquid pipe 72a, second chemical liquid pipe 72b, rinsing liquid pipe 73, and first discharge pipe 74 are tubular members through which processing liquid L flows. First chemical liquid on-off valve 75a, second chemical liquid on-off valve 75b, rinsing liquid on-off valve 76, and first on-off valve VA1 to fifth on-off valve VA5 are opened and closed under the control of controller 10 (controller 11).

[0228] The first on-off valve VA1 to the fifth on-off valve VA5 are provided in the common pipe 71. Of the first on-off valve VA1 to the fifth on-off valve VA5, the first on-off valve VA1 is closest to the supply and discharge port 43. Of the first on-off valve VA1 to the fifth on-off valve VA5, the fifth on-off valve VA5 is farthest from the supply and discharge port 43. The second on-off valve VA2 to the fourth on-off valve VA4 are provided between the first on-off valve VA1 and the fifth on-off valve VA5. The second on-off valve VA2 is provided at a position closer to the first on-off valve VA1 than the third on-off valve VA3 and the fourth on-off valve VA4. The fourth on-off valve VA4 is provided at a position closer to the fifth on-off valve VA5 than the second on-off valve VA2 and the third on-off valve VA3. The third on-off valve VA3 is provided between the second on-off valve VA2 and the third on-off valve VA3.

[0229] The downstream end of first chemical liquid pipe 72a, the downstream end of second chemical liquid pipe 72b, and the downstream end of rinsing liquid pipe 73 are connected to common pipe 71. First chemical liquid pipe 72a, second chemical liquid pipe 72b, and rinsing liquid pipe 73 communicate with common pipe 71. More specifically, the downstream end of first chemical liquid pipe 72a is connected to common pipe 71 between second on-off valve VA2 and third on-off valve VA3. The downstream end of second chemical liquid pipe 72b is connected to common pipe 71 between third on-off valve VA3 and fourth on-off valve VA4. Rinse liquid pipe 73 is connected to common pipe 71 between fourth on-off valve VA4 and fifth on-off valve VA5.

[0230] First chemical liquid piping 72a allows the first chemical liquid (DHF) to flow up to common piping 71. First chemical liquid on-off valve 75a is provided in first chemical liquid piping 72a. Like chemical liquid on-off valve 75 described with reference to FIG. 2, first chemical liquid on-off valve 75a controls the flow and stop of the flow of the first chemical liquid via first chemical liquid piping 72a.

[0231] When the first chemical liquid on-off valve 75a is opened, the first chemical liquid (DHF) flows through the first chemical liquid pipe 72a to the common pipe 71. As a result, the first chemical liquid flows into the common pipe 71. When the first chemical liquid flows into the common pipe 71, the control device 10 (control unit 11) opens the first on-off valve VA1 and the second on-off valve VA2, and closes the third on-off valve VA3, the second chemical liquid on-off valve 75b, and the rinse liquid on-off valve 76. As a result, the first chemical liquid flows through the common pipe 71 to the supply and discharge port 43. In other words, the first chemical liquid is supplied to the supply and discharge port 43. Therefore, the first chemical liquid is supplied from the supply and discharge port 43 to the inner space 4a of the storage tank 4, and the first chemical liquid is stored in the storage tank 4.

[0232] When first chemical liquid on-off valve 75a is closed, the flow of the first chemical liquid (DHF) through first chemical liquid piping 72a is stopped. Therefore, the supply of the first chemical liquid to supply / discharge port 43 is stopped. As a result, the supply of the first chemical liquid to storage tank 4 is stopped.

[0233] Second chemical liquid piping 72b allows the second chemical liquid (TMAH) to flow up to common piping 71. Second chemical liquid on-off valve 75b and heater 75c are provided in second chemical liquid piping 72b. Similar to chemical liquid on-off valve 75 described with reference to FIG. 2, second chemical liquid on-off valve 75b controls the flow and stop of the second chemical liquid through second chemical liquid piping 72b. Heater 75c heats the second chemical liquid flowing through second chemical liquid piping 72b. For example, heater 75c raises the temperature of the second chemical liquid to 40° C. Heater 75c is controlled by control device 10 (control unit 11).

[0234] When second chemical liquid on-off valve 75b is opened, the second chemical liquid (TMAH) flows through second chemical liquid pipe 72b to common pipe 71. As a result, the second chemical liquid flows into common pipe 71. When the second chemical liquid flows into common pipe 71, control device 10 (controller 11) opens first on-off valve VA1 to third on-off valve VA3 and closes fourth on-off valve VA4, first chemical liquid on-off valve 75a, and rinse liquid on-off valve 76. As a result, the second chemical liquid flows through common pipe 71 to supply and discharge port 43, similar to when first chemical liquid on-off valve 75a is opened. Therefore, the second chemical liquid is stored in storage tank 4, similar to when first chemical liquid on-off valve 75a is opened.

[0235] When second chemical liquid on-off valve 75b is closed, the flow of the second chemical liquid (TMAH) through second chemical liquid piping 72b is stopped. Therefore, the supply of the second chemical liquid to supply and discharge port 43 is stopped. As a result, the supply of the second chemical liquid to storage tank 4 is stopped.

[0236] When opening the rinsing liquid on-off valve 76 to supply the rinsing liquid to the storage tank 4, the control device 10 (control unit 11) opens the first on-off valve VA1 to the fourth on-off valve VA4 and closes the first chemical liquid on-off valve 75a, the second chemical liquid on-off valve 75b, and the fifth on-off valve VA5.

[0237] The control device 10 (control unit 11) drives the first ejector 77 when discharging the first chemical liquid (DHF) or the rinsing liquid from the storage tank 4. When driving the first ejector 77, the control device 10 (control unit 11) opens the first on-off valve VA1 to the fifth on-off valve VA5 and closes the first chemical liquid on-off valve 75a, the second chemical liquid on-off valve 75b, and the rinsing liquid on-off valve 76.

[0238] The recovery unit 9 recovers the second chemical liquid (TMAH) discharged from the storage tank 4. The control device 10 (control unit 11) drives the second ejector 91 when discharging the second chemical liquid from the storage tank 4. The high-pressure fluid that drives the second ejector 91 is an inert gas. For example, the high-pressure fluid that drives the second ejector 91 may be nitrogen gas. When driving the second ejector 91, the control device 10 (control unit 11) opens the first on-off valve VA1 and closes the second on-off valve VA2, the first chemical liquid on-off valve 75a, the second chemical liquid on-off valve 75b, and the rinse liquid on-off valve 76.

[0239] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 20. Fig. 20 is a diagram showing the flow of operations of the substrate processing apparatus 100 of this embodiment. In detail, Fig. 20 shows the flow of processing executed by the control unit 11. The processing shown in Fig. 20 includes steps S11 to S23.

[0240] 20 is started by carrying the substrate W into the processing chamber 201. The control unit 11 controls the center robot CR to carry the substrate W into the processing chamber 201, and then controls the substrate holding unit 2 to execute a transfer process for transferring the substrate W from the center robot CR to the substrate holding unit 2 (step S11). When the substrate W is transferred from the center robot CR to the substrate holding unit 2, the control unit 11 controls the supply and discharge unit 7 to supply the first chemical liquid (DHF) into the storage tank 4 (inner space 4a) (step S12). The processes of steps S11 and S12 are similar to the processes of steps S1 and S2 shown in FIG. 9, and therefore detailed description thereof will be omitted.

[0241] When the first chemical liquid (DHF) is stored in the storage tank 4, substrate processing is performed with the first chemical liquid (step S13). Specifically, the control unit 11 controls the lifting mechanism 34 of the moving unit 30 to move the substrate holder 2 from the upper position P1 to the lower position P2. As a result, the substrate W is immersed in the first chemical liquid in the storage tank 4 (step S13a). When the substrate W is immersed in the first chemical liquid (DHF) in the storage tank 4, the control unit 11 agitates the first chemical liquid in the storage tank 4 (step S13b). The process of step S13 is similar to the process of step S3 shown in FIG. 9, and therefore a detailed description thereof will be omitted. By the substrate processing with the first chemical liquid, a native oxide film is removed from the surface of the substrate W.

[0242] After performing the substrate processing with the first chemical liquid, the control unit 11 controls the supply and discharge unit 7 to discharge the first chemical liquid from the storage tank 4 (step S14). After performing the discharge process of the first chemical liquid, the control unit 11 performs a rinsing process (step S15). After performing the rinsing process, the control unit 11 controls the supply and discharge unit 7 to discharge the rinsing liquid from the storage tank 4 (step S16). The processes of steps S14 to S16 are similar to the processes of steps S4 to S6 shown in FIG. 9, and therefore detailed description thereof will be omitted.

[0243] After performing the draining process of the rinsing liquid, the control unit 11 controls the supply and drain unit 7 to supply the second chemical liquid (TMAH) into the storage tank 4 (inner space 4a) (step S17). The process of step S17 is similar to the process of step S2 shown in FIG. 9, and therefore a detailed description thereof will be omitted.

[0244] When the second chemical liquid (TMAH) is stored in the storage tank 4, substrate processing with the second chemical liquid is performed (step S18). Specifically, the control unit 11 agitates the second chemical liquid in the storage tank 4 (step S18a). The process of step S18a is similar to the process of step S3b shown in Fig. 9, and therefore a detailed description thereof will be omitted. The substrate processing with the second chemical liquid etches the polysilicon layer of the substrate W.

[0245] After performing the substrate processing with the second chemical liquid, the control unit 11 controls the supply and discharge unit 7 to discharge the second chemical liquid from the storage tank 4 (step S19). After performing the discharge process of the second chemical liquid, the control unit 11 performs a rinsing process (step S20). After performing the rinsing process, the control unit 11 controls the supply and discharge unit 7 to discharge the rinsing liquid from the storage tank 4 (step S21). The processes of steps S19 to S21 are similar to the processes of steps S4 to S6 shown in FIG. 9, and therefore detailed description thereof will be omitted.

[0246] After performing the draining process of the rinsing liquid, the control unit 11 performs a drying process (step S22). After performing the drying process, the control unit 11 controls the center robot CR to unload the substrate W from the processing chamber 201 (step S23). As a result, the process shown in Fig. 20 ends. The processes of steps S22 and S23 are similar to the processes of steps S7 and S8 shown in Fig. 9, and therefore detailed description thereof will be omitted.

[0247] The fifth embodiment of the present invention has been described above with reference to Figures 19 and 20. According to the fifth embodiment, gas is intermittently ejected from each ejection part 5 in the same manner as in the first embodiment, so that temperature unevenness is unlikely to occur in the second chemical liquid (TMAH) stored in the storage tank 4. Therefore, the entire processing surface of the substrate W can be uniformly processed.

[0248] Furthermore, when the dissolved oxygen concentration increases, the etching rate of TMAH decreases. In contrast, according to the fifth embodiment, as in the first embodiment, it is possible to suppress an increase in the dissolved oxygen concentration of the second chemical liquid (TMAH) stored in the storage tank 4. Therefore, it is possible to suppress a decrease in the etching rate of the second chemical liquid (TMAH).

[0249] Furthermore, an increase in the dissolved oxygen concentration may cause a natural oxide film to be formed on the surface of the substrate W. Therefore, an increase in the dissolved oxygen concentration in the first chemical liquid (DHF) may cause a decrease in the processing capacity of the first chemical liquid (DHF). In other words, the speed at which the natural oxide film is removed may slow down. In contrast, according to the fifth embodiment, as in the first embodiment, an increase in the dissolved oxygen concentration in the first chemical liquid (DHF) stored in the storage tank 4 can be suppressed. Therefore, a decrease in the processing capacity of the first chemical liquid (DHF) can be suppressed. Therefore, a decrease in the speed at which the natural oxide film is removed can be suppressed.

[0250] [Embodiment 6] Next, a sixth embodiment of the present invention will be described with reference to Fig. 21. However, only differences from the first to fifth embodiments will be described, and a description of the same aspects as the first to fifth embodiments will be omitted. The sixth embodiment differs from the first to fifth embodiments in the configuration of the fluid supply unit 6.

[0251] In detail, in the sixth embodiment, when the chemical solution is stored in the storage tank 4, the fluid supply unit 6 supplies two types of gas (first component gas and second component gas) to the plurality of jetting parts 5. Therefore, the two types of gas are jetted into the chemical solution from the plurality of jetting parts 5. Specifically, the fluid supply unit 6 supplies the two types of gas to the jetting parts 5 belonging to different groups. In this embodiment, the fluid supply unit 6 supplies air (first component gas) and nitrogen gas (second component gas) to the plurality of jetting parts 5. Therefore, air (first component gas) and nitrogen gas (second component gas) are jetted from the plurality of jetting parts 5.

[0252] More specifically, the fluid supply unit 6 can adjust the mixing ratio of two types of gases. That is, the fluid supply unit 6 can adjust the mixing ratio of air (first component gas) and nitrogen gas (second component gas). Specifically, the fluid supply unit 6 can adjust the flow rate of each gas. That is, the fluid supply unit 6 can adjust the flow rate of air (first component gas) and the flow rate of nitrogen gas (second component gas). By adjusting the mixing ratio of air (first component gas) and nitrogen gas (second component gas), the dissolved oxygen concentration of the chemical solution can be adjusted. As a result, the dissolved oxygen concentration can be kept constant or approximately constant.

[0253] 21 is a diagram showing the configurations of the storage tank 4 and the fluid supply unit 6 included in the substrate processing apparatus 100 of this embodiment.

[0254] As shown in FIG. 21, in this embodiment, the fluid supply unit 6 has four fluid pipes 61 (first fluid pipe 61a to fourth fluid pipe 61d), four fluid on-off valves 62 (first fluid on-off valve 62a to fourth fluid on-off valve 62d), a first flow rate control valve 63a, a second flow rate control valve 63b, a first branch pipe 66a to a fourth branch pipe 66d, a first common pipe 67a, and a second common pipe 67b. In addition, the storage tank 4 has eight jetting parts 5 (first jetting part 51 to eighth jetting part 58). In this embodiment, the eight jetting parts 5 are divided into four groups.

[0255] The first common pipe 67a and the second common pipe 67b are tubular members. The first common pipe 67a distributes a first component gas (air) to the first branch pipe 66a and the second branch pipe 66b. The second common pipe 67b distributes a second component gas (nitrogen gas) to the third branch pipe 66c and the fourth branch pipe 66d. The air circulating through the first common pipe 67a contains, for example, dry air (dry, clean air). Dry air contains nitrogen and oxygen in a ratio of approximately 8:2.

[0256] The first branch pipe 66a and the second branch pipe 66b are tubular members. The first branch pipe 66a distributes the first component gas (air) to the first fluid pipe 61a. The second branch pipe 66b distributes the first component gas (air) to the second fluid pipe 61b. The first fluid on-off valve 62a is provided in the first branch pipe 66a and controls the distribution of the first component gas (air) through the first branch pipe 66a and the stop of the distribution. Similarly, the second fluid on-off valve 62b is provided in the second branch pipe 66b and controls the distribution of the first component gas (air) through the second branch pipe 66b and the stop of the distribution.

[0257] The first fluid pipe 61a distributes the first component gas (air) that flows into the first fluid pipe 61a from the first branch pipe 66a to the first jetting part 51 and the fifth jetting part 55. The second fluid pipe 61b distributes the first component gas (air) that flows into the second fluid pipe 61b from the second branch pipe 66b to the third jetting part 53 and the seventh jetting part 57. Therefore, when the first fluid on-off valve 62a opens, the first component gas (air) is jetted from the first jetting part 51 and the fifth jetting part 55. When the second fluid on-off valve 62b opens, the first component gas (air) is jetted from the third jetting part 53 and the seventh jetting part 57.

[0258] The third branch pipe 66c and the fourth branch pipe 66d are tubular members. The third branch pipe 66c distributes the second component gas (nitrogen gas) up to the third fluid pipe 61c. The fourth branch pipe 66d distributes the second component gas (nitrogen gas) up to the fourth fluid pipe 61d. The third fluid on-off valve 62c is provided in the third branch pipe 66c and controls the distribution of the second component gas (nitrogen gas) through the third branch pipe 66c and the stop of the distribution. Similarly, the fourth fluid on-off valve 62d is provided in the fourth branch pipe 66d and controls the distribution of the second component gas (nitrogen gas) through the fourth branch pipe 66d and the stop of the distribution.

[0259] The third fluid pipe 61c distributes the second component gas (nitrogen gas) that flows into the third fluid pipe 61c from the third branch pipe 66c to the second jetting part 52 and the sixth jetting part 56. The fourth fluid pipe 61d distributes the second component gas (nitrogen gas) that flows into the fourth fluid pipe 61d from the fourth branch pipe 66d to the fourth jetting part 54 and the eighth jetting part 58. Therefore, when the third fluid on-off valve 62c opens, the second component gas (nitrogen gas) is jetted from the second jetting part 52 and the sixth jetting part 56. When the fourth fluid on-off valve 62d opens, the second component gas (nitrogen gas) is jetted from the fourth jetting part 54 and the eighth jetting part 58.

[0260] The first flow rate control valve 63a is provided in the first common pipe 67a. The first flow rate control valve 63a adjusts the flow rate of the first component gas (air) flowing through the first common pipe 67a. The second flow rate control valve 63b is provided in the second common pipe 67b. The second flow rate control valve 63b adjusts the flow rate of the second component gas (nitrogen gas) flowing through the second common pipe 67b. Therefore, the first flow rate control valve 63a can adjust the flow rates of the gases ejected from the first ejection part 51, the third ejection part 53, the fifth ejection part 55, and the seventh ejection part 57. The second flow rate control valve 63b can adjust the flow rates of the gases ejected from the second ejection part 52, the fourth ejection part 54, the sixth ejection part 56, and the eighth ejection part 58. The configurations of the first flow rate adjustment valve 63a and the second flow rate adjustment valve 63b are similar to the configuration of the flow rate adjustment valve 63 described with reference to FIG. 16, and therefore a detailed description thereof will be omitted.

[0261] When the chemical solution is stored in the storage tank 4, the control device 10 (control unit 11) controls the first fluid on-off valve 62a to the fourth fluid on-off valve 62d to eject the first component gas (air) and the second component gas (nitrogen gas) into the chemical solution from the multiple ejection units 5. For example, the control device 10 (control unit 11) may sequentially open and close the first fluid on-off valve 62a to the fourth fluid on-off valve 62d in chronological order, as described with reference to FIG.

[0262] When the rinsing liquid is stored in the storage tank 4, the control device 10 (control unit 11) closes the first fluid on-off valve 62a and the second fluid on-off valve 62b, and controls the third fluid on-off valve 62c and the fourth fluid on-off valve 62d to eject the second component gas (nitrogen gas) into the rinsing liquid from the second jetting part 52, the fourth jetting part 54, the sixth jetting part 56, and the eighth jetting part 58. For example, the control device 10 (control unit 11) may sequentially open and close the third fluid on-off valve 62c and the fourth fluid on-off valve 62d in chronological order, as described with reference to FIG.

[0263] When performing a drying process, the control device 10 (control unit 11) closes the first fluid on-off valve 62a and the second fluid on-off valve 62b and opens the third fluid on-off valve 62c and the fourth fluid on-off valve 62d to eject the second component gas (nitrogen gas) from the second ejection part 52, the fourth ejection part 54, the sixth ejection part 56, and the eighth ejection part 58. As a result, the gas (nitrogen gas) is sprayed onto the substrate W, and the substrate W is dried.

[0264] The sixth embodiment of the present invention has been described above with reference to Fig. 21. According to the sixth embodiment, the dissolved oxygen concentration of the chemical liquid can be adjusted by adjusting the mixture ratio of air (first component gas) and nitrogen gas (second component gas). Therefore, the dissolved oxygen concentration can be kept constant or approximately constant. Therefore, the etching rate of the chemical liquid used in the etching process can be kept constant or approximately constant.

[0265] More specifically, the etching rate of the chemical used in the etching process is affected by the dissolved oxygen concentration. Meanwhile, the dissolved oxygen concentration of the chemical may increase over time due to the dissolution of oxygen that permeates through piping, etc. Also, the dissolved oxygen concentration of the chemical may be affected by the altitude of the location where the substrate processing apparatus 100 is installed. That is, since the air pressure differs depending on the altitude, the saturation concentration of the chemical also differs depending on the altitude. As a result, the dissolved oxygen concentration of the chemical may change depending on the altitude.

[0266] In contrast, according to the present embodiment, the mixture ratio of air (first component gas) and nitrogen gas (second component gas) supplied to the chemical liquid can be adjusted. Therefore, the dissolved oxygen concentration in the chemical liquid can be adjusted to keep the dissolved oxygen concentration constant or approximately constant. Therefore, the etching rate of the chemical liquid used in the etching process can be kept constant or approximately constant.

[0267] In this embodiment, nitrogen gas is ejected from some of the ejection parts 5 during the rinsing process and the drying process. However, nitrogen gas may be ejected from all of the ejection parts 5 during the rinsing process and the drying process.

[0268] Furthermore, in this embodiment, two types of gases are used to agitate the treatment liquid L, but three or more types of fluids may be used to agitate the treatment liquid L.

[0269] [Embodiment 7] Next, a seventh embodiment of the present invention will be described with reference to Figures 22(a), 22(b) and 23 to 25. However, differences from the first to sixth embodiments will be described, and a description of the same aspects as the first to sixth embodiments will be omitted. The seventh embodiment differs from the first to sixth embodiments in that the chemical liquid is not agitated during substrate processing with the chemical liquid.

[0270] First, the substrate processing performed by the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 22(a) and Fig. 22(b). Fig. 22(a) is a cross-sectional view showing a part of the substrate W before the substrate processing with the chemical liquid is performed. Fig. 22(b) is a cross-sectional view showing a part of the substrate W after the substrate processing with the chemical liquid is performed. The substrate processing apparatus 100 of this embodiment processes the substrate W using a mixed acid. The mixed acid may be, for example, a chemical liquid prepared by mixing phosphoric acid, nitric acid, and acetic acid.

[0271] As shown in Figures 22(a) and 22(b), the substrate W to be processed by the substrate processing apparatus 100 of this embodiment has a silicon substrate 310 and a pattern PT formed on the silicon substrate 310, similar to the substrate W shown in Figures 4(a) and 4(b).

[0272] 22(a) and 22(b), the silicon oxide film 331 and the silicon nitride film 332 are etched by performing substrate processing using a chemical solution (mixed acid). As a result, the recess 320 is enlarged in a planar direction D2. The planar direction D2 indicates a lateral direction substantially perpendicular to a thickness direction D1 of the substrate W.

[0273] Fig. 23 is a cross-sectional view showing a schematic configuration of the substrate processing unit 200 included in the substrate processing apparatus 100 of this embodiment. In detail, Fig. 23 shows the substrate processing unit 200 when the substrate W is immersed in the chemical solution (mixed acid) in the storage tank 4 and the substrate is processed.

[0274] 23, in this embodiment, the control device 10 (control unit 11) closes the fluid on-off valve 62 of the fluid supply unit 6 during substrate processing with the chemical liquid (mixed acid). Therefore, in this embodiment, the chemical liquid in the storage tank 4 is not agitated during substrate processing with the chemical liquid (mixed acid).

[0275] Fig. 24 is a diagram showing the substrate processing apparatus 100 during the rinsing process. As shown in Fig. 24, the control device 10 (controller 11) opens the fluid on-off valve 62 of the fluid supply unit 6 during the rinsing process, similarly to the substrate processing apparatus 100 described with reference to Fig. 12. Therefore, the rinsing liquid is agitated during the rinsing process.

[0276] Fig. 25 is a diagram showing the flow of operations of the substrate processing apparatus 100 of this embodiment. In detail, Fig. 25 shows the flow of processes executed by the control unit 11. The processes shown in Fig. 25 include steps S31 to S38.

[0277] 25 starts with the loading of the substrate W into the processing chamber 201. The control unit 11 controls the center robot CR to load the substrate W into the processing chamber 201, and then controls the substrate holding unit 2 to execute a transfer process for transferring the substrate W from the center robot CR to the substrate holding unit 2 (step S31). Note that the process of step S31 is substantially similar to the process of step S1 shown in FIG. 9, and therefore a detailed description thereof will be omitted.

[0278] When the substrate W is transferred from the center robot CR to the substrate holder 2, the control unit 11 controls the supply and discharge unit 7 to supply the chemical solution (mixed acid) into the storage tank 4 (inner space 4a) (step S32). Note that the process of step S32 is substantially the same as the process of step S2 shown in FIG. 9, and therefore a detailed description thereof will be omitted.

[0279] Once the chemical liquid is stored in the storage tank 4, substrate processing is performed with the chemical liquid (mixed acid) (step S33). In detail, the control unit 11 controls the lifting mechanism 34 of the moving unit 30 to move the substrate holder 2 from the upper position P1 to the lower position P2. As a result, the substrate W is immersed in the chemical liquid (mixed acid) in the storage tank 4 (step S33a). In this embodiment, unlike the process of step S3 shown in FIG. 9, the chemical liquid is not agitated.

[0280] When a predetermined time has elapsed since the substrate holder 2 was moved from the upper position P1 to the lower position P2, the control unit 11 controls the supply and discharge unit 7 to discharge the chemical solution (mixed acid) from the storage tank 4 (step S34). The process after step S34 is substantially the same as the process after step S4 shown in FIG. 9, and therefore the description thereof will be omitted.

[0281] The seventh embodiment of the present invention has been described above with reference to Figures 22(a), 22(b) and 23 to 25. According to the seventh embodiment, the pattern PT included in the substrate W can be etched into a desired shape.

[0282] Specifically, when etching the silicon oxide film 331 and the silicon nitride film 332 alternately stacked on the silicon substrate 310, if the flow rate of the chemical solution flowing along the outermost surface Ws of the substrate W is fast, the etching rate becomes higher at a position closer to the outermost surface Ws of the substrate W. As a result, the amount of etching becomes larger at a position closer to the outermost surface Ws of the substrate W, and the amount of etching becomes non-uniform in the thickness direction D1 of the substrate W.

[0283] In contrast, according to the present embodiment, the chemical liquid in the storage tank 4 is not agitated during the etching process using the chemical liquid. Therefore, since the chemical liquid does not flow during the etching process using the chemical liquid, the etching amount in the thickness direction D1 of the substrate W can be made uniform or approximately uniform. Therefore, the pattern PT included in the substrate W can be etched into a desired shape.

[0284] [Embodiment 8] Next, an eighth embodiment of the present invention will be described with reference to Fig. 26. However, differences from the first to seventh embodiments will be described, and a description of the same matters as the first to seventh embodiments will be omitted. The eighth embodiment differs from the first to seventh embodiments in the configuration of the supply and discharge section 7.

[0285] Specifically, the supply and discharge unit 7 supplies the processing liquid containing fine bubbles to the storage tank 4. The substrate processing apparatus 100 of the present embodiment removes the residue of the resist film from the substrate W by collapsing the fine bubbles contained in the processing liquid containing fine bubbles.

[0286] Fig. 26 is a cross-sectional view showing a schematic configuration of the substrate processing unit 200 included in the substrate processing apparatus 100 of this embodiment. In detail, Fig. 26 shows the substrate processing unit 200 when the substrate W is immersed in the processing liquid containing fine bubbles in the storage tank 4 and substrate processing is performed. In the following, the gas supplied by the fluid supply unit 6 to the storage tank 4 during substrate processing may be referred to as a "first gas".

[0287] As shown in FIG. 26, in this embodiment, the supply and discharge unit 7 includes a common pipe 71, a rinsing liquid pipe 73, a first discharge pipe 74, a rinsing liquid on-off valve 76, an ejector 77, a first on-off valve VA1 to a third on-off valve VA3, a processing liquid supply unit 78, and a liquid supply pipe 79a.

[0288] The processing liquid supply unit 78 is controlled by the control device 10 (control unit 11) to supply the processing liquid containing fine bubbles to the liquid supply pipe 79a. Specifically, the processing liquid supply unit 78 has a first component pipe 78a, a second component pipe 78b, a first component on-off valve 78c, a second component on-off valve 78d, and a fine bubble generator 78e.

[0289] The first component pipe 78a is a tubular member that distributes the second gas, and distributes the second gas up to the fine bubble generating unit 78e. That is, the first component pipe 78a supplies the second gas to the fine bubble generating unit 78e. Here, the second gas is ozone gas. By using ozone gas, the residue of the resist film can be efficiently removed from the substrate W.

[0290] The first component on-off valve 78c is provided in the first component pipe 78a. The first component on-off valve 78c controls the flow and stop of the second gas (ozone gas) through the first component pipe 78a, similar to the chemical solution on-off valve 75 described with reference to FIG.

[0291] The second component pipe 78b is a tubular member that circulates the liquid, and circulates the liquid up to the fine bubble generating unit 78e. In other words, the second component pipe 78b supplies the liquid to the fine bubble generating unit 78e. Here, the liquid is sulfuric acid. However, the liquid may also be pure water. The pure water may be, for example, deionized water (DIW). By using sulfuric acid or pure water, the residue of the resist film can be efficiently removed from the substrate W.

[0292] Second component on-off valve 78d is provided in second component pipe 78b. Second component on-off valve 78d controls the flow and stop of the liquid (sulfuric acid) through second component pipe 78b, similar to chemical solution on-off valve 75 described with reference to FIG.

[0293] The fine-bubble generating unit 78e generates fine bubbles made of the second gas (ozone gas) supplied to the fine-bubble generating unit 78e via the first component pipe 78a in the liquid supplied to the fine-bubble generating unit 78e via the second component pipe 78b, thereby generating a treatment liquid containing fine bubbles. The operation of the fine-bubble generating unit 78e is controlled by the control device 10 (control unit 11).

[0294] The configuration of the fine bubble generating unit 78e is not particularly limited as long as it can generate fine bubbles in the liquid. For example, the fine bubble generating unit 78e may be a high-speed swirling liquid flow type or a pressurized dissolution type, or may be an ultrasonic cavitation type. The high-speed swirling liquid flow type and the pressurized dissolution type can simultaneously generate microbubbles and nanobubbles in the liquid. The ultrasonic cavitation type can generate nanobubbles in the liquid.

[0295] The liquid supply pipe 79a is a tubular member, and distributes the micro-bubble-containing treatment liquid generated by the micro-bubble generating unit 78e to the common pipe 71. More specifically, the downstream end of the liquid supply pipe 79a is connected to the common pipe 71. Therefore, the liquid supply pipe 79a communicates with the common pipe 71. Specifically, the downstream end of the liquid supply pipe 79a is connected to the common pipe 71 between the first on-off valve VA1 and the second on-off valve VA2, similar to the chemical liquid pipe 72 described with reference to FIG. 2.

[0296] Next, the storage tank 4 and the fluid supply unit 6 will be described with reference to Fig. 26. As shown in Fig. 26, in this embodiment, the storage tank 4 has a heater 47. The heater 47 may be embedded in, for example, the bottom wall 41 of the storage tank 4. The heater 47 is controlled by the control device 10 (control unit 11).

[0297] The fluid supply unit 6 supplies a first gas to the jetting unit 5 during substrate processing. Here, the first gas is ozone gas. The fluid supply unit 6 also supplies a third gas to the jetting unit 5 during rinsing processing and drying processing. The third gas is, for example, an inert gas. Here, the third gas is nitrogen gas.

[0298] Specifically, the fluid supply unit 6 further includes a fluid pipe 611 and a fluid on-off valve 621. The fluid pipe 611 is a tubular member that allows gas to flow, and allows the third gas to flow up to the fluid pipe 61. The fluid on-off valve 621 is provided in the fluid pipe 611. The fluid on-off valve 621 controls the flow of the third gas (nitrogen gas) through the fluid pipe 611 and the stop of the flow.

[0299] Next, the operation of the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 26. In this embodiment, as shown in Fig. 26, when removing residual resist film from the substrate W, the substrate W is immersed in the processing liquid containing fine bubbles in the storage tank 4.

[0300] When the substrate W is immersed in the processing liquid containing fine bubbles, the control device 10 (control unit 11) controls the fluid supply unit 6 to eject a first gas (ozone gas) into the processing liquid containing fine bubbles from the ejection unit 5. As a result, the processing liquid containing fine bubbles in the storage tank 4 is agitated.

[0301] Furthermore, the control device 10 (control unit 11) drives the heater 47 while the substrate W is immersed in the processing liquid containing fine bubbles. As a result, the fine bubbles contained in the processing liquid containing fine bubbles are collapsed by radiant heat from the bottom surface 41a of the storage tank 4. Then, the energy generated when the fine bubbles are collapsed removes the residue of the resist film from the substrate W. Specifically, the residue of the resist film adhering to the substrate W separates from the substrate W and is mixed into the processing liquid containing fine bubbles.

[0302] Furthermore, the control device 10 (control unit 11) controls the supply and discharge unit 7 to continue supplying the processing liquid containing fine bubbles while the substrate W is immersed in the processing liquid containing fine bubbles. As a result, the processing liquid L (liquid contained in the processing liquid containing fine bubbles) overflows from the outlet 44 of the storage tank 4 while removing the residue of the resist film from the substrate W. The processing liquid L overflowing from the outlet 44 is drained by the drain unit 8. Since the processing liquid L overflowing from the outlet 44 contains the residue of the resist film removed from the substrate W, the residue of the resist film is discharged from the storage tank 4. This reduces the possibility that the residue of the resist film removed from the substrate W will reattach to the substrate W.

[0303] During the rinsing process and the drying process, the control device 10 (control unit 11) closes the fluid on-off valve 62 and opens the fluid on-off valve 621. As a result, the third gas (nitrogen gas) flows from the fluid piping 611 to the jetting part 5 via the fluid piping 61, and the third gas (nitrogen gas) is jetted from the jetting part 5 (jet port 5a).

[0304] The eighth embodiment of the present invention has been described above with reference to Fig. 26. According to the eighth embodiment, in a single-wafer type apparatus in which the substrates W are immersed one by one in the processing liquid L and processed one by one, it is possible to efficiently remove resist film residue from the substrates W.

[0305] Specifically, since the processing liquid containing fine bubbles in the storage tank 4 is agitated when removing the resist film residue from the substrate W, the fine bubbles can be collapsed over the entire processing surface of the substrate W. As a result, the resist film residue can be removed from the entire processing surface of the substrate W.

[0306] Moreover, according to the present embodiment, the inner space 4a of the storage tank 4 becomes a sealed space or a substantially sealed space by the facing member 3 when processing the substrate W. Therefore, the ozone gas released from the processing liquid L can be prevented from diffusing to the surroundings of the storage tank 4.

[0307] The first gas may be an inert gas such as nitrogen gas, etc. In this case, the fluid pipe 611 and the fluid on-off valve 621 may be omitted.

[0308] [Embodiment 9] Next, a ninth embodiment of the present invention will be described with reference to Fig. 27. However, differences from the first to eighth embodiments will be described, and a description of the same matters as the first to eighth embodiments will be omitted. The ninth embodiment differs from the first to eighth embodiments in that the fluid supplied from the fluid supply unit 6 to the storage tank 4 during substrate processing is a liquid.

[0309] 27 is a cross-sectional view showing a schematic configuration of a substrate processing section 200 included in the substrate processing apparatus 100 of the present embodiment. The substrate processing apparatus 100 of the ninth embodiment removes resist film residues from a substrate W in the same manner as the substrate processing apparatus 100 of the eighth embodiment.

[0310] 27, in this embodiment, the fluid supply unit 6 includes a fluid pipe 61 and a processing liquid supply unit 65. Similarly to the substrate processing apparatus 100 described with reference to FIG. 26, the fluid supply unit 6 further includes a fluid pipe 611 and a fluid on-off valve 621.

[0311] The processing liquid supply unit 65 is controlled by the control device 10 (control unit 11) to supply the processing liquid containing fine bubbles to the fluid pipe 61. In this embodiment, the fluid supplied by the fluid supply unit 6 to the storage tank 4 during substrate processing is the processing liquid containing fine bubbles. The fluid supplied by the fluid supply unit 6 to the storage tank 4 during rinsing and drying is gas, similar to the substrate processing apparatus 100 described with reference to FIG. 26. Specifically, the fluid supply unit 6 supplies an inert gas to the storage tank 4 during rinsing and drying. The inert gas is, for example, nitrogen gas.

[0312] Specifically, the treatment liquid supply unit 65 has a first component pipe 65a, a second component pipe 65b, a first component on-off valve 65c, a second component on-off valve 65d, and a fine bubble generating unit 65e.

[0313] The first component pipe 65a is a tubular member that allows gas to flow, and allows the gas to flow to the fine bubble generating unit 65e. That is, the first component pipe 65a supplies gas to the fine bubble generating unit 65e. Here, the gas is ozone gas. By using ozone gas, the resist film residue can be efficiently removed from the substrate W.

[0314] First component on-off valve 65c is provided in first component pipe 65a. Like first component on-off valve 78c shown in Fig. 26, first component on-off valve 65c controls the flow and stop of the gas (ozone gas) through first component pipe 65a.

[0315] The second component pipe 65b is a tubular member that circulates the first liquid, and circulates the first liquid up to the fine bubble generating unit 65e. In other words, the second component pipe 65b supplies the first liquid to the fine bubble generating unit 65e. Here, the first liquid is sulfuric acid. However, the first liquid may be pure water. By using sulfuric acid or pure water, the residue of the resist film can be efficiently removed from the substrate W.

[0316] Second component on-off valve 65d is provided in second component pipe 65b. Similar to second component on-off valve 78d shown in Fig. 26, second component on-off valve 65d controls the flow and stop of the flow of the first liquid (sulfuric acid) through second component pipe 65b.

[0317] The fine-bubble generating unit 65e generates fine bubbles made of a gas (ozone gas) supplied to the fine-bubble generating unit 65e via the first component pipe 65a in the first liquid supplied to the fine-bubble generating unit 65e via the second component pipe 65b, thereby generating a fine-bubble-containing treatment liquid. In this embodiment, the fluid pipe 61 distributes the fine-bubble-containing treatment liquid generated by the fine-bubble generating unit 65e to the ejection unit 5. The configuration of the fine-bubble generating unit 65e is similar to that of the fine-bubble generating unit 78e described with reference to FIG. 26, and therefore a detailed description thereof will be omitted.

[0318] Next, the storage tank 4 and the supply and discharge unit 7 will be described with reference to Fig. 27. As shown in Fig. 27, in this embodiment, the storage tank 4 has a heater 47. The supply and discharge unit 7 has a common pipe 71, a rinsing liquid pipe 73, a first discharge pipe 74, a rinsing liquid on-off valve 76, an ejector 77, a liquid supply pipe 79a, a liquid on-off valve 79b, and a first on-off valve VA1 to a third on-off valve VA3.

[0319] The liquid supply pipe 79a is a tubular member, and distributes the second liquid up to the common pipe 71. The liquid on-off valve 79b is provided in the liquid supply pipe 79a. Like the chemical liquid on-off valve 75 described with reference to FIG. 2, the liquid on-off valve 79b controls the distribution of the second liquid through the liquid supply pipe 79a and the stop of the distribution. Here, the second liquid is sulfuric acid. However, the second liquid may be pure water. By using sulfuric acid or pure water, the residue of the resist film can be efficiently removed from the substrate W.

[0320] Next, the operation of the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 27. In this embodiment, as shown in Fig. 27, before the processing liquid L in the storage tank 4 is stirred, the substrate W is immersed in the second liquid (processing liquid L) in the storage tank 4.

[0321] When removing the resist film residue from the substrate W, the control device 10 (control unit 11) controls the fluid supply unit 6 to eject the processing liquid containing fine bubbles (processing liquid L) from the ejection unit 5 into the processing liquid L in the storage tank 4. As a result, the processing liquid L in the storage tank 4 is agitated, and the processing liquid containing fine bubbles spreads over the entire surface of the substrate W to be processed.

[0322] The control device 10 (control unit 11) drives the heater 47 while the treatment liquid containing fine bubbles is being ejected from the ejection unit 5. As a result, the fine bubbles contained in the treatment liquid containing fine bubbles are collapsed by radiant heat from the bottom surface 41a of the storage tank 4. Then, the energy generated when the fine bubbles are collapsed removes the residue of the resist film from the substrate W. Specifically, the residue of the resist film adhering to the substrate W separates from the substrate W and is mixed into the treatment liquid containing fine bubbles.

[0323] In this embodiment, the processing liquid L containing fine bubbles is supplied from the fluid supply unit 6 to agitate the processing liquid L in the storage tank 4, so that the processing liquid L overflows from the outlet 44 of the storage tank 4. Therefore, the control device 10 (control unit 11) opens the discharge opening / closing valve 82 of the discharge unit 8 while the processing liquid containing fine bubbles is being sprayed from the spray unit 5. As a result, the processing liquid L overflowing from the outlet 44 is drained by the discharge unit 8. The processing liquid L overflowing from the outlet 44 contains residues of the resist film removed from the substrate W, so that the residues of the resist film are discharged from the storage tank 4. This reduces the possibility that the residues of the resist film removed from the substrate W will reattach to the substrate W.

[0324] During the rinsing process and the drying process, the control device 10 (controller 11) closes the first component on-off valve 65c and the second component on-off valve 65d and opens the fluid on-off valve 621. As a result, the gas (nitrogen gas) flows from the fluid piping 611 through the fluid piping 61 to the jetting part 5, and the gas (nitrogen gas) is jetted out from the jetting part 5 (jet port 5a).

[0325] Above, the ninth embodiment of the present invention has been described with reference to Fig. 27. According to the ninth embodiment, similarly to the eighth embodiment, in a single-wafer type apparatus in which the substrates W are immersed one by one in the processing liquid L and processed one by one, it is possible to efficiently remove resist film residue from the substrates W.

[0326] [Embodiment 10] Next, a tenth embodiment of the present invention will be described with reference to Figures 28 and 29. However, differences from the first to ninth embodiments will be described, and a description of the same aspects as the first to ninth embodiments will be omitted. The tenth embodiment differs from the first to ninth embodiments in that the substrate holder 2 holds the substrate W in an oblique position with respect to the horizontal direction.

[0327] Fig. 28 is a cross-sectional view showing a schematic view of a part of the configuration of a substrate processing unit 200 included in the substrate processing apparatus 100 of the present embodiment. As shown in Fig. 28, in this embodiment, the substrate holding unit 2 holds the substrate W in an oblique position relative to the horizontal direction. Here, the oblique position includes a position in which the surface to be processed faces upward.

[0328] Specifically, the substrate holder 2 holds the substrate W such that the entire portion of the substrate W in an oblique position with respect to the horizontal direction is immersed in the processing liquid L. The angle (tilt angle) of the substrate W with respect to the horizontal direction is within a range of angles that allows the entire substrate W to be immersed in the processing liquid L stored in the storage tank 4, and the upper end of the substrate W held in an oblique position with respect to the horizontal direction is disposed at a position lower than the liquid level of the processing liquid L. For example, the tilt angle of the substrate W is smaller than 3°. Specifically, as described with reference to FIG. 5, the height of the liquid level of the processing liquid L stored in the storage tank 4 is, for example, 3 mm or more and 10 mm or less. In addition, the diameter of the substrate W is, for example, 200 mm or more and 450 mm or less. When the diameter of the substrate W is 200 mm, the tilt angle of the substrate W is larger than 0° and smaller than 2.8°. When the diameter of the substrate W is 450 mm, the tilt angle of the substrate W is larger than 0° and smaller than 1.2°. In this manner, the tilt angle of the substrate W may be a small angle.

[0329] Fig. 29 is a diagram showing the configurations of the storage tank 4 and the fluid supply unit 6 included in the substrate processing apparatus 100 of this embodiment. In detail, Fig. 29 illustrates the storage tank 4 having three jetting units 5 (first jetting unit 51 to third jetting unit 53). Fig. 29 shows a cross section of the storage tank 4.

[0330] 29, in this embodiment, the multiple jetting parts 5 are arranged biasedly on one side of the storage tank 4. Specifically, the multiple jetting parts 5 are arranged at positions facing the processing target surface of the substrate W held in an oblique position with respect to the horizontal direction.

[0331] 29 illustrates a configuration in which three jetting parts 5 (first jetting part 51 to third jetting part 53) are divided into three groups. In this case, the fluid supply part 6 may have three fluid pipes 61 (first fluid pipe 61a to third fluid pipe 61c) and three fluid on-off valves 62 (first fluid on-off valve 62a to third fluid on-off valve 62c).

[0332] The tenth embodiment of the present invention has been described above with reference to Fig. 28 and Fig. 29. According to the tenth embodiment, it is possible to agitate the processing liquid L in contact with the processing target surface of the substrate W held in an oblique posture with respect to the horizontal direction. Therefore, similar to the first to ninth embodiments, the substrate W can be processed without rotating the substrate W. This makes it possible to simplify the configuration of a single-wafer type apparatus in which the substrates W are immersed one by one in the processing liquid L and processed one by one.

[0333] [Embodiment 11] Next, an eleventh embodiment of the present invention will be described with reference to Figures 30 and 31. However, differences from the first to tenth embodiments will be described, and a description of the same matters as the first to tenth embodiments will be omitted. The eleventh embodiment differs from the first to tenth embodiments in that the substrate W is supported by a storage tank 4.

[0334] Fig. 30 is a cross-sectional view showing a schematic view of a part of the configuration of the substrate processing unit 200 included in the substrate processing apparatus 100 of this embodiment. In detail, Fig. 30 shows the substrate processing unit 200 when transferring the substrate W from the substrate holding unit 2 to the storage tank 4.

[0335] 30, in this embodiment, the substrate processing unit 200 has a first moving part 30A. In addition, the storage tank 4 has a plurality of protrusions 49.

[0336] The first moving unit 30A is controlled by the control device 10 (control unit 11) to move the substrate holding unit 2. Specifically, the first moving unit 30A is controlled by the control device 10 (control unit 11) to raise and lower the substrate holding unit 2 between an upper position P1 (see FIG. 2) and a lower position P2 (see FIG. 3). In this embodiment, the substrate holding unit 2 has a plurality of clamping members 21, a drive mechanism 23, and a support member 24.

[0337] The support member 24 supports the multiple clamping members 21. Each of the multiple clamping members 21 extends downward from the support member 24. The drive mechanism 23 is supported by the support member 24. The support member 24 may be, for example, disk-shaped. Alternatively, the support member 24 may be annular.

[0338] The first moving section 30A has a first connecting section 31A, a first arm 32A, a first base 33A, and a lifting mechanism 34A. The first connecting section 31A connects the support member 24 and the first arm 32A. The configurations of the first connecting section 31A, the first arm 32A, the first base 33A, and the lifting mechanism 34A are substantially similar to the configurations of the connecting section 31, the arm 32, the base 33, and the lifting mechanism 34 described with reference to FIG. 2, and therefore description thereof will be omitted.

[0339] The multiple protrusions 49 are provided on the bottom surface 41a of the storage tank 4. The multiple protrusions 49 protrude upward from the bottom surface 41a of the storage tank 4. In this embodiment, when the substrate holding unit 2 moves from the upper position P1 to the lower position P2, the lower surface Wd of the substrate W comes into contact with the upper ends of the multiple protrusions 49. In other words, the first moving unit 30A moves the substrate holding unit 2 to a position where the lower surface Wd of the substrate W comes into contact with the upper ends of the multiple protrusions 49.

[0340] In this embodiment, the control device 10 (control unit 11) controls the first moving unit 30A to move the substrate holding unit 2 from the upper position P1 to the lower position P2, and then drives the driving mechanism 23 to release the substrate W from the substrate holding unit 2. As a result, the substrate W is supported by the multiple protrusions 49 in the storage tank 4. In other words, the substrate W is transferred from the substrate holding unit 2 to the storage tank 4.

[0341] Fig. 31 is another cross-sectional view showing a schematic view of a part of the configuration of the substrate processing section 200 included in the substrate processing apparatus 100 of this embodiment. In detail, Fig. 30 shows the substrate processing section 200 when processing a substrate W.

[0342] 31, in this embodiment, the substrate processing unit 200 further includes a second moving unit 30B. The second moving unit 30B is controlled by the control device 10 (control unit 11) to move the opposing member 3. Specifically, the second moving unit 30B moves the opposing member 3 in the vertical and horizontal directions.

[0343] Specifically, the second moving unit 30B moves the opposing member 3 from the retracted position to a position where the lower surface of the opposing member 3 contacts the upper end of the storage tank 4 (the upper end of the side wall 42). Alternatively, the second moving unit 30B moves the opposing member 3 from the retracted position to a position where the lower surface of the opposing member 3 is close to the upper end of the storage tank 4 (the upper end of the side wall 42). Therefore, when processing the substrate W, the inner space 4a of the storage tank 4 becomes an enclosed space or a substantially enclosed space. The retracted position indicates a position that does not face the storage tank 4. More specifically, the retracted position indicates a position where the substrate holding unit 2 and the opposing member 3 do not interfere with each other when the substrate holding unit 2 moves up and down.

[0344] In this embodiment, the second moving section 30B has a second connecting section 31B, a second arm 32B, a second base 33B, and a moving mechanism 34B. Note that the configurations of the second connecting section 31B, the second arm 32B, and the second base 33B are substantially similar to the connecting section 31, the arm 32, and the base 33 described with reference to FIG. 2, and therefore description thereof will be omitted.

[0345] The moving mechanism 34B moves the second arm 32B in the vertical and horizontal directions. As a result, the opposing member 3 moves in the vertical and horizontal directions. The moving mechanism 34B is controlled by the control device 10 (control unit 11).

[0346] Specifically, the moving mechanism 34B includes a swing mechanism and a lifting mechanism. The swing mechanism swings the second base 33B around a rotation axis AX extending in the vertical direction, causing the second arm 32B to swing along a horizontal plane. As a result, the opposing member 3 moves along the horizontal plane. The lifting mechanism raises and lowers the second base 33B in the vertical direction, causing the second arm 32B to rise and lower. As a result, the opposing member 3 moves in the vertical direction. The actuator of the swing mechanism may include, for example, an electric motor capable of forward and reverse rotation, and a reducer. The actuator of the lifting mechanism may include, for example, a ball screw mechanism and an electric motor capable of forward and reverse rotation, or may include a cylinder such as an air cylinder.

[0347] Above, the eleventh embodiment of the present invention has been described with reference to Fig. 30 and Fig. 31. According to the eleventh embodiment, like the first to tenth embodiments, the substrate W can be processed without rotating the substrate W. Therefore, the configuration of a single-wafer type apparatus in which the substrates W are immersed one by one in the processing liquid L and processed one by one can be made simpler.

[0348] [Embodiment 12] Next, a twelfth embodiment of the present invention will be described with reference to Fig. 32. However, differences from the first to eleventh embodiments will be described, and a description of the same matters as the first to eleventh embodiments will be omitted. The twelfth embodiment differs from the first to eleven embodiments in that a supply line for supplying the treatment liquid L to the storage tank 4 and a discharge line for discharging the treatment liquid L from the storage tank 4 are separately provided.

[0349] Fig. 32 is a cross-sectional view that typically shows the configuration of the substrate processing section 200 included in the substrate processing apparatus 100 of this embodiment. In detail, Fig. 32 shows the substrate processing section 200 when the substrate holding section 2 is located at the lower position P2.

[0350] 32, in this embodiment, the storage tank 4 has a supply port 43a and a discharge port 43b. The substrate processing apparatus 100 also has a supply unit 7A and a discharge unit 7B. In the following description, the discharge unit 7B may be referred to as a "second discharge unit 7B" to distinguish it from the discharge unit 8.

[0351] The supply port 43a and the discharge port 43b are provided in the bottom wall 41 of the storage tank 4. In other words, the supply port 43a and the discharge port 43b are formed in the bottom wall 41 of the storage tank 4. The supply port 43a and the discharge port 43b may be holes penetrating the bottom wall 41.

[0352] The supply unit 7A supplies the treatment liquid L to the supply port 43a. The second discharge unit 7B discharges the treatment liquid L from the storage tank 4 through the discharge port 43b. Therefore, the treatment liquid L is supplied from the supply port 43a into the storage tank 4 (inner space 4a). Also, the treatment liquid L is discharged from the discharge port 43b to the outside of the storage tank 4 (inner space 4a).

[0353] Specifically, the supply unit 7A has a common pipe 71A, a chemical liquid pipe 72, a rinsing liquid pipe 73, a chemical liquid on-off valve 75, a rinsing liquid on-off valve 76, and a supply on-off valve VA6. The second discharge unit 7B has a discharge pipe 74A, a discharge pipe 74B, a discharge on-off valve VA7, and an ejector 77. In the following description, the discharge on-off valve VA7 may be referred to as a "second discharge on-off valve VA7" to distinguish it from the discharge on-off valve 82.

[0354] The common pipe 71A is a tubular member through which the processing liquid L flows. One end of the common pipe 71A is connected to the supply port 43a. The common pipe 71A communicates with the supply port 43a. A supply on-off valve VA6 is provided on the common pipe 71A. The supply on-off valve VA6 is controlled by the control device 10 (control unit 11) to open and close.

[0355] The downstream end of the chemical liquid pipe 72 and the downstream end of the rinsing liquid pipe 73 are connected to a common pipe 71A. The chemical liquid pipe 72 and the rinsing liquid pipe 73 communicate with the common pipe 71A. More specifically, the downstream end of the chemical liquid pipe 72 and the downstream end of the rinsing liquid pipe 73 are connected to the common pipe 71A upstream of the supply on-off valve VA6.

[0356] When the chemical liquid on-off valve 75 is opened, the chemical liquid flows into the common pipe 71A. When opening the chemical liquid on-off valve 75, the control device 10 (control unit 11) opens the supply on-off valve VA6 and closes the rinse liquid on-off valve 76. As a result, the chemical liquid flows through the common pipe 71A to the supply port 43a, and is supplied from the supply port 43a to the inner space 4a of the storage tank 4. When opening the chemical liquid on-off valve 75, the control device 10 (control unit 11) closes the second discharge on-off valve VA7. Therefore, the chemical liquid is stored in the storage tank 4.

[0357] When the rinse liquid on-off valve 76 is opened, the rinse liquid flows into the common pipe 71A. When the rinse liquid on-off valve 76 is opened, the control device 10 (controller 11) opens the supply on-off valve VA6 and closes the chemical liquid on-off valve 75. As a result, the rinse liquid flows through the common pipe 71 to the supply port 43a, and is supplied from the supply port 43a to the inner space 4a of the storage tank 4. When the rinse liquid on-off valve 76 is opened, the control device 10 (controller 11) closes the second exhaust on-off valve VA7. Therefore, the rinse liquid is stored in the storage tank 4.

[0358] The discharge pipes 74A and 74B are tubular members through which the treatment liquid L flows. The upstream end of the discharge pipe 74A is connected to the discharge port 43b. The discharge pipe 74A communicates with the discharge port 43b. A second discharge on-off valve VA7 is provided on the discharge pipe 74A. The second discharge on-off valve VA7 is opened and closed under the control of the control device 10 (control unit 11).

[0359] The downstream end of the discharge pipe 74A and the upstream end of the discharge pipe 74B are connected to the ejector 77. Therefore, the downstream end of the discharge pipe 74A is connected to the upstream end of the discharge pipe 74B via the ejector 77. In other words, the discharge pipe 74A communicates with the discharge pipe 74B via the ejector 77.

[0360] When driving the ejector 77, the control device 10 (control unit 11) opens the second discharge on-off valve VA7 and closes the supply on-off valve VA6. When the ejector 77 is driven, the treatment liquid L in the storage tank 4 is sucked into the discharge pipe 74A through the discharge port 43b. The treatment liquid L sucked into the discharge pipe 74A is sucked into the ejector 77 through the discharge pipe 74A and then sent from the ejector 77 to the discharge pipe 74B. The treatment liquid L sent to the discharge pipe 74B is drained. For example, the discharge pipe 74B distributes the treatment liquid L to a drain tank.

[0361] The twelfth embodiment of the present invention has been described above with reference to Fig. 32. According to the twelfth embodiment, similarly to the first to eleventh embodiments, the substrates W can be processed without rotating the substrates W. Therefore, the configuration of a single-wafer type apparatus in which the substrates W are immersed one by one in the processing liquid L and processed one by one can be made simpler.

[0362] The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 32). However, the present invention is not limited to the above embodiments, and can be implemented in various aspects without departing from the gist of the present invention. In addition, the components disclosed in the above embodiments can be modified as appropriate. For example, a certain component among all the components shown in one embodiment may be added to a component of another embodiment, or some of all the components shown in one embodiment may be deleted from the embodiment.

[0363] The drawings are mainly schematic illustrations of each component to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configurations of each component shown in the above embodiment are merely examples and are not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

[0364] For example, although the storage tank 4 has the liquid receiving portion 45 in the embodiment described with reference to Figures 1 to 32, the liquid receiving portion 45 may be omitted. In this case, the second discharge pipe 81 may be connected to the outlet 44.

[0365] Furthermore, in the embodiment described with reference to FIGS. 1 to 32, the storage tank 4 has a plurality of jetting parts 5, but the storage tank 4 may have one jetting part 5.

[0366] 1 to 32, the annular groove 46 is provided in the storage tank 4, but the configuration for avoiding interference between the clamping members 21 and the storage tank 4 is not limited to an annular groove. For example, the bottom wall 41 of the storage tank 4 may be formed with recesses facing the respective clamping members 21, or the bottom wall 41 of the storage tank 4 may be formed with a plurality of arc-shaped grooves. [Industrial Applicability]

[0367] The present invention is useful in an apparatus for processing a substrate. [Explanation of symbols]

[0368] 2: Board holding part 3: Opposing member 4: Storage tank 4a: Inner space 5: Spout part 6:Fluid supply section 7: Supply and discharge section 7A: Supply section 7B: Discharge section (second discharge section) 9: Collection section 11: Control section 30: Moving section 30A: 1st moving part 41: Bottom wall 42: Side wall 44: Outlet 51: 1st spout part 52:Second spout part 53: 3rd spout part 54: 4th spout part 55: 5th spout part 56: 6th spout part 57: 7th spout part 58: 8th spout part 100: Substrate processing apparatus L: Processing liquid R:Gushing direction W: Substrate θ: Ejection angle

Claims

1. A substrate processing apparatus for processing a substrate with a processing liquid, a substrate holder that holds the substrate in a horizontal position or in a position oblique to the horizontal direction; a storage tank that stores the processing liquid and accommodates the substrate so as to immerse the substrate in the processing liquid; a fluid supply unit that supplies a fluid to the storage tank; Equipped with The storage tank has a bottom wall and a side wall protruding upward from the bottom wall, The processing liquid is stored in an inner space surrounded by the bottom wall and the side wall, the side wall has at least one ejection part that ejects the fluid supplied from the fluid supply part into the processing liquid stored in the inner space to agitate the processing liquid.

2. The substrate holder holds the substrate in a horizontal position, The substrate processing apparatus according to claim 1 , wherein the storage tank accommodates the substrate held in a horizontal position by the substrate holder, and immerses the substrate in the processing liquid.

3. The substrate processing apparatus according to claim 2 , wherein the ejection unit ejects the fluid in a direction parallel to the substrate held in a horizontal position.

4. The substrate processing apparatus according to claim 3 , wherein the jetting unit jets the fluid in a direction oblique to a horizontal direction from the jetting unit toward a center of the substrate.

5. The at least one jetting portion includes two jetting portions, One of the two ejection parts ejects the fluid in a first direction, The other of the two ejection parts ejects the fluid in a second direction, 5. The substrate processing apparatus of claim 4, wherein a magnitude of an angle of the first direction with respect to a horizontal direction from the one of the jetting portions toward the center of the substrate is different from a magnitude of an angle of the second direction with respect to a horizontal direction from the other of the jetting portions toward the center of the substrate.

6. The substrate holding unit further includes a moving unit that moves the substrate holding unit, The substrate processing apparatus according to claim 1 , wherein the moving unit moves the substrate holder to move the substrate to an inside of the storage tank.

7. Further, a facing member that faces the storage tank and covers the inner space, The substrate processing apparatus according to claim 1 , wherein the fluid includes an inert gas.

8. a moving unit that moves the substrate holding unit; a facing member that faces the storage tank and covers the inner space; Further comprising: the fluid comprises an inert gas; the opposing member is coupled to the substrate holder, 6. The substrate processing apparatus of claim 1, wherein the moving unit moves the substrate holding unit and the opposing member to move the substrate toward the inside of the storage tank and to move the opposing member to a position where the opposing member covers the inner space.

9. The substrate holding unit further includes a moving unit that moves the substrate holding unit, the substrate has a treatment surface to be treated with the treatment liquid, The substrate processing apparatus according to claim 1 , wherein the moving part moves the substrate to a position corresponding to a position where the ejection part is provided and a direction in which the surface to be processed faces.

10. a liquid supply unit that supplies the treatment liquid to the storage tank; a liquid discharge unit that discharges the treatment liquid from the storage tank; a control unit that controls the fluid supply unit, the liquid supply unit, and the liquid discharge unit; Further comprising: The processing liquid includes a chemical liquid and a rinse liquid, the control unit controls the liquid supply unit and the liquid discharge unit to store the chemical liquid in the storage tank and then to store the rinse liquid in the storage tank; The substrate processing apparatus according to claim 1 , wherein the control unit controls the fluid supply unit to agitate the chemical liquid stored in the storage tank.

11. a liquid supply unit that supplies the treatment liquid to the storage tank; a liquid discharge unit that discharges the treatment liquid from the storage tank; a control unit that controls the fluid supply unit, the liquid supply unit, and the liquid discharge unit; Further comprising: The processing liquid includes a chemical liquid and a rinse liquid, the control unit controls the liquid supply unit and the liquid discharge unit to store the chemical liquid in the storage tank and then to store the rinse liquid in the storage tank; The substrate processing apparatus according to claim 1 , wherein the control unit controls the fluid supply unit to agitate the rinsing liquid stored in the storage tank.

12. The substrate processing apparatus according to claim 1 , wherein the storage tank further comprises an outlet provided above the ejection portion.

13. A control unit for controlling the fluid supply unit is further provided. The at least one jetting portion includes a plurality of jetting portions divided into a plurality of groups, Each of the plurality of groups includes at least one of the ejection portions, The substrate processing apparatus according to claim 1 , wherein the control unit controls the fluid supply unit when agitating the processing liquid, and switches a period during which the fluid is ejected for each of the groups.

14. The fluid includes two types of gases, The at least one jetting portion includes a plurality of jetting portions divided into a plurality of groups, Each of the plurality of groups includes at least one of the ejection portions, The substrate processing apparatus according to claim 1 , wherein the fluid supply unit supplies the two types of gas to the jetting units belonging to different groups.

15. The substrate processing apparatus according to claim 1 , further comprising a recovery unit that recovers the processing liquid from the storage tank.

16. The substrate processing apparatus according to claim 1 , wherein the processing liquid includes a liquid containing fine bubbles.

17. The substrate processing apparatus according to claim 16 , wherein the fine bubbles include fine bubbles of ozone gas.

18. The substrate processing apparatus according to claim 1 , wherein the fluid includes a liquid containing fine bubbles.

19. The substrate processing apparatus according to claim 18 , wherein the fine bubbles include fine bubbles of ozone gas.

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