Acoustic wave device, high frequency module, and communication device

Abstract

To provide an acoustic wave device that can reduce the size of a module in which a plurality of components including the acoustic wave device are arranged.SOLUTION: An acoustic wave device 10 includes a substrate 20, an external connection electrode 40 disposed on a first main surface 201 of the substrate 20, and an external shield layer 30 disposed on a side surface 203 of the substrate 20. The substrate 20 has a first main surface 201 and a second main surface 202 that face each other, and a side surface 203 connecting the first main surface 201 and the second main surface 202. A tip surface 402 of the external connection electrode 40 is exposed.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to an elastic wave device, a high-frequency module, and a communication device, and particularly to an elastic wave device including an external shield layer, a high-frequency module including the elastic wave device, and a communication device including the high-frequency module.

Background Art

[0002] Patent Document 1 discloses a high-frequency module including a transmission filter and a reception filter that are elastic wave filters (elastic wave devices). The high-frequency module of Patent Document 1 includes a metal shield wall between the transmission filter and the reception filter and between the transmission filter and other components of the high-frequency module. The metal shield wall improves the isolation between the transmission filter and the reception filter and the isolation between the transmission filter and other components.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the high-frequency module of Patent Document 1, since a metal shield wall is required, it is difficult to miniaturize the high-frequency module.

[0005] An object of the present invention is to provide an elastic wave device capable of miniaturizing a module in which a plurality of components including the elastic wave device are arranged, a high-frequency module including the elastic wave device, and a communication device.

Means for Solving the Problems

[0006] An elastic wave device according to one aspect of the present invention includes a substrate, an external connection electrode, and an external shield layer. The substrate has a first main surface and a second main surface facing each other, and side surfaces connecting the first main surface and the second main surface. The external connection electrode is disposed on the first main surface of the substrate. The external shield layer is disposed on the side surface of the substrate. The tip surface of the external connection electrode is exposed.

[0007] A high-frequency module according to one aspect of the present invention includes the elastic wave device and a mounting substrate. The mounting substrate has the elastic wave device disposed thereon.

[0008] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit connected to the high-frequency module.

Advantages of the Invention

[0009] According to the elastic wave device, high-frequency module, and communication device according to one aspect of the present invention, miniaturization of a module in which a plurality of components including the elastic wave device are arranged can be achieved.

Brief Description of the Drawings

[0010]

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MODE FOR CARRYING OUT THE INVENTION

[0011] Hereinafter, the high-frequency module and the communication device according to the embodiment will be described with reference to the drawings. Each of the drawings referred to in the following embodiments is a schematic diagram, and the ratio of the size and thickness of each component in the drawings does not necessarily reflect the actual dimensional ratio.

[0012] (Embodiment 1) (1) SAW device As shown in FIGS. 1 to 3, the SAW device 10 according to Embodiment 1 includes a substrate 20, an external shield layer 30, and a plurality of external connection electrodes 40. Further, as shown in FIGS. 2 and 3, the SAW device 10 includes a cover layer 50, a functional electrode 60, a wiring layer 70, a support layer 80, and a resin layer 90.

[0013] (1.1) Substrate The substrate 20 is, for example, a piezoelectric substrate. More specifically, the substrate 20 is, for example, a piezoelectric substrate. The material of the piezoelectric substrate is, for example, lithium tantalate, lithium niobate, or quartz.

[0014] As shown in FIGS. 2 and 3, the substrate 20 has a first main surface 201, a second main surface 202, and a side surface 203. The first main surface 201 and the second main surface 202 face each other in the thickness direction of the substrate 20 (hereinafter referred to as "first direction D1"). The side surface 203 connects the first main surface 201 and the second main surface 202. In a plan view from the first direction D1, the substrate 20 is square, but is not limited thereto, and may be, for example, rectangular.

[0015] (1.2) Cover layer The cover layer 50 is, for example, flat. The cover layer 50 is square-shaped in a plan view from the first direction D1, but is not limited to a square shape and may be, for example, rectangular. The cover layer 50 has substantially the same size as the substrate 20 in a plan view from the first direction D1. The cover layer 50 is disposed on the support layer 80. The cover layer 50 has a fourth main surface 501 and a third main surface 502 that face each other in the first direction D1. The third main surface 502 of the cover layer 50 and the first main surface 201 of the substrate 20 face each other in the first direction D1. Also, the third main surface 502 of the cover layer 50 is exposed.

[0016] The cover layer 50 has electrical insulation properties. The cover layer 50 includes, for example, a resin and a filler. The resin is, for example, an epoxy resin, a polyimide resin, or a phenolic resin, but is not limited to these materials. The material of the filler is, for example, an inorganic material. The material of the filler is, for example, an inorganic material such as silica oxide or ceramic, but is not limited thereto.

[0017] (1.3) External shield layer The external shield layer 30 is disposed on the side surface 203 of the substrate 20. More specifically, as shown in FIGS. 2 and 3, the external shield layer 30 is a prismatic member that covers all the side surfaces of the substrate 20. Note that the external shield layer 30 may further cover the second main surface 202 of the substrate 20.

[0018] The external shield layer 30 has a multilayer structure in which a plurality of metal layers are laminated, but is not limited to a multilayer structure and may be a single metal layer. The single metal layer includes one or more types of metals.

[0019] (1.4) External connection electrodes Each of the plurality of external connection electrodes 40 electrically connects the electrode of the mounting substrate of the module on which the elastic wave device 10 is disposed and the wiring layer 70. The material of the external connection electrode 40 is, for example, an appropriate metal material such as copper, nickel, or an alloy mainly composed of these metals.

[0020] Each of the plurality of external connection electrodes 40 penetrates the cover layer 50 in the first direction D1. Each of the plurality of external connection electrodes 40 has a tip surface 401 and a tip surface 402 at both ends in the first direction D1. The tip surface 401 of the external connection electrode 40 is connected to the functional electrode 60 or the wiring layer 70 on the first main surface 201 of the substrate 20. That is, each of the plurality of external connection electrodes 40 is disposed on the first main surface 201 of the substrate 20.

[0021] Each of the tip surfaces 402 of the plurality of external connection electrodes 40 is exposed.

[0022] The tip surface 402 of each of the plurality of external connection electrodes 40 is disposed on the same plane as the fourth main surface 501 of the cover layer 50. Therefore, when the surface acoustic wave device 10 is disposed on the mounting substrate of the module, the distance in the first direction D1 between the fourth main surface 501 of the cover layer 50 of the surface acoustic wave device 10 and the main surface on which the surface acoustic wave device 10 of the module mounting substrate is disposed can be shortened. Therefore, it is possible to miniaturize the high-frequency module including the surface acoustic wave device 10.

[0023] The plurality of external connection electrodes 40 includes a first connection electrode 41 connected to the functional electrode 60 and a second connection electrode 42 connected to the external shield layer 30.

[0024] (1.5) Functional electrode The functional electrode 60 is disposed on the first main surface 201 of the substrate 20. The functional electrode 60 includes, for example, an IDT (Interdigital Transducer) electrode. The material of the IDT electrode is, for example, an appropriate metal material such as aluminum, copper, platinum, gold, silver, titanium, nickel, chromium, molybdenum, tungsten, or an alloy mainly composed of any of these metals. Further, the IDT electrode may have a structure in which a plurality of metal films made of these metals or alloys are laminated.

[0025] (1.6) Wiring layer The wiring layer 70 is disposed on the first main surface 201 of the substrate 20. The wiring layer 70 includes a wiring portion 71 and a wiring portion 72. The wiring portion 71 electrically connects the first connection electrode 41 and the functional electrode 60. The wiring portion 72 electrically connects the second connection electrode 42 and the external shield layer 30. The material of the wiring layer 70 is an appropriate metal material such as, for example, aluminum, copper, platinum, gold, silver, titanium, nickel, chromium, molybdenum, tungsten, or an alloy mainly composed of any of these metals. Further, the wiring layer 70 may have a structure in which a plurality of metal films made of these metals or alloys are laminated.

[0026] (1.7) Support layer As shown in FIGS. 2 and 3, the support layer 80 is formed on the first main surface 201 of the substrate 20 and is disposed between the substrate 20 and the cover layer 50 in the first direction D1.

[0027] The support layer 80 is, for example, rectangular in a plan view from the first direction D1 and surrounds the functional electrode 60.

[0028] The support layer 80 has electrical insulation. The material of the support layer 80 is, for example, a synthetic resin such as an epoxy resin or a polyimide. Note that the support layer 80 does not contain a filler. Note that the support layer 80 is not limited to a configuration that does not contain a filler and may contain a filler.

[0029] (1.8) Resin layer As shown in FIGS. 2 and 3, the resin layer 90 is disposed between the wiring portion 71 of the wiring layer 70 and the external shield layer 30. The resin layer 90 has electrical insulation. The resin layer 90 is an insulator for insulating the wiring portion 71 and the external shield layer 30.

[0030] The material of the resin layer 90 is, for example, a synthetic resin such as an epoxy resin or a polyimide.

[0031] (2) Effect The elastic wave device 10 according to Embodiment 1 includes a substrate 20, an external connection electrode 40, and an external shield layer 30. The substrate 20 has a first main surface and a second main surface facing each other, and side surfaces connecting the first main surface and the second main surface. The external connection electrode 40 is disposed on the first main surface 201 of the substrate 20. The external shield layer 30 is disposed on the side surface 203 of the substrate 20. The tip surface 402 of the external connection electrode 40 is exposed. Thus, in the elastic wave device 10 according to Embodiment 1, in a module in which a plurality of components including the elastic wave device are arranged, the external shield layer 30 functions as a shield member between the elastic wave device 10 and other components, and between two other components. Further, in the elastic wave device 10, since the external connection electrode 40 directly contacts the electrode of the mounting substrate of the module, it is possible to reduce the height of the elastic wave device 10.

[0032] Further, the elastic wave device 10 according to Embodiment 1 further includes a cover layer 50. The cover layer 50 has a third main surface 502 and a fourth main surface 501 facing each other. The third main surface 502 of the cover layer 50 faces the first main surface 201 of the substrate 20. The fourth main surface 501 of the cover layer 50 is exposed. The tip surface 402 of the external connection electrode 40 is disposed on the same plane as the fourth main surface 501 of the cover layer 50. Thus, in the elastic wave device 10 according to Embodiment 1, in a module including the elastic wave device 10, it is possible to reduce the distance between the elastic wave device 10 and the mounting substrate of the module. Therefore, it becomes easy to reduce the height of the module including the elastic wave device 10.

[0033] (Embodiment 2) (1) Elastic wave device In the elastic wave device 10a according to Embodiment 2, the positional relationship between the tip surfaces 402 of the plurality of external connection electrodes 40 and the fourth main surface 501 of the cover layer 50 is different from that of the elastic wave device 10 according to Embodiment 1.

[0034] In the elastic wave device 10a according to Embodiment 2, as shown in FIGS. 4 and 5, the distance H1 in the first direction D1 between the tip surface 402 of the external connection electrode 40 and the first main surface 201 of the substrate 20 is smaller than the distance H2 in the first direction D1 between the fourth main surface 501 of the cover layer 50 and the first main surface 201 of the substrate 20.

[0035] More specifically, as shown in FIGS. 4 and 5, the external connection electrode 40 does not penetrate the cover layer 50, and the tip surface 402 of the external connection electrode 40 is exposed from the fourth main surface 501 of the cover layer 50. Thereby, when the elastic wave device 10a is arranged on the mounting substrate of the module, the distance between the fourth main surface 501 of the cover layer 50 of the elastic wave device 10a and the main surface on which the elastic wave device 10a of the module mounting substrate is arranged becomes shorter.

[0036] (2) High-frequency module As shown in FIG. 6, the high-frequency module 1 according to Embodiment 2 is used, for example, in a communication device 100. The communication device 100 is, for example, a mobile phone such as a smartphone. Note that the communication device 100 is not limited to being a mobile phone, and may be, for example, a wearable terminal such as a smartwatch. The high-frequency module 1 is a module that can support, for example, 4G (Fourth Generation Mobile Communication) standards, 5G (Fifth Generation Mobile Communication) standards, and the like. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio).

[0037] (2.1) Circuit configuration of the high-frequency module Hereinafter, the circuit configuration of the high-frequency module 1 according to Embodiment 2 will be described with reference to FIG. 6.

[0038] As shown in FIG. 6, the high-frequency module 1 according to Embodiment 2 includes a plurality of external connection terminals 18, a switch 110, a first matching circuit 121, a second matching circuit 122, a transmission filter 131, a reception filter 132, a third matching circuit 141, a fourth matching circuit 142, a power amplifier 151, and a low-noise amplifier 152. The plurality of external connection terminals 18 include an antenna terminal 181, a signal output terminal 182, and a signal input terminal 183. Among the high-frequency module 1, the first matching circuit 121, the transmission filter 131, the third matching circuit 141, and the power amplifier 151 are included in the transmission path. Among the high-frequency module 1, the second matching circuit 122, the reception filter 132, the fourth matching circuit 142, and the low-noise amplifier 152 are included in the reception path.

[0039] (2.1.1) Power Amplifier The power amplifier 151 is an amplifier that amplifies a transmission signal. The power amplifier 151 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 151 is connected to the signal processing circuit 17 via the signal output terminal 182. The output terminal of the power amplifier 151 is connected to the transmission filter 131 via the third matching circuit 141.

[0040] (2.1.2) Transmission Filter The transmission filter 131 is a filter that allows a transmission signal to pass through. The transmission filter 131 is, for example, an acoustic wave filter including a plurality of series arm resonators and a plurality of parallel arm resonators. The acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that utilizes surface acoustic waves. The transmission filter 131 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the transmission filter 131 is connected to the output terminal of the power amplifier 151 via the third matching circuit 141. The output terminal of the transmission filter 131 is connected to the switch 110 via the first matching circuit 121.

[0041] (2.1.3) Low-Noise Amplifier The low-noise amplifier 152 is an amplifier that amplifies the received signal. The low-noise amplifier 152 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the low-noise amplifier 152 is connected to the signal processing circuit 17 via the signal input terminal 183. The output terminal of the low-noise amplifier 152 is connected to the receiving filter 132 via the fourth matching circuit 142.

[0042] (2.1.4) Receiving Filter The receiving filter 132 is a filter that passes the received signal. The receiving filter 132 is, for example, an acoustic wave filter including a plurality of series-arm resonators and a plurality of parallel-arm resonators. The acoustic wave filter is, for example, a SAW filter using surface acoustic waves. The receiving filter 132 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the receiving filter 132 is connected to the switch 110 via the second matching circuit 122. The output terminal of the receiving filter 132 is connected to the output terminal of the low-noise amplifier 152 via the fourth matching circuit 142.

[0043] (2.1.5) Switch The switch 110 switches the filter connected to the antenna terminal 181 from among the transmission filter 131 and the receiving filter 132. That is, the switch 110 is a switch for connecting either the reception path or the transmission path to the antenna terminal 181. The switch 110 has a common terminal 111 and a plurality (two in the illustrated example) of selection terminals 112 and 113. The common terminal 111 is connected to the antenna terminal 181. The selection terminal 112 is connected to the transmission filter 131 via the first matching circuit 121. The selection terminal 113 is connected to the receiving filter 132 via the second matching circuit 122.

[0044] (2.1.6) Matching Circuit The first matching circuit 121 is a circuit for impedance matching between the output terminal of the transmission filter 131 and the selection terminal 112 of the switch 110. The first matching circuit 121 includes at least one of one or more capacitors and one or more inductors.

[0045] The second matching circuit 122 is a circuit for impedance matching between the selection terminal 113 of the switch 110 and the input terminal of the reception filter 132. The second matching circuit 122 includes at least one of one or more capacitors and one or more inductors.

[0046] The third matching circuit 141 is a circuit for impedance matching between the output terminal of the power amplifier 151 and the input terminal of the transmission filter 131. The third matching circuit 141 includes at least one of one or more capacitors and one or more inductors.

[0047] The fourth matching circuit 142 is a circuit for impedance matching between the output terminal of the reception filter 132 and the input terminal of the low-noise amplifier 152. The fourth matching circuit 142 includes at least one of one or more capacitors and one or more inductors. Although the fourth matching circuit 142 is grounded in FIG. 6, the fourth matching circuit 142 may not be grounded.

[0048] (2.2) Structure of the high-frequency module As shown in FIG. 7, the high-frequency module 1 includes a mounting substrate 2, a surface acoustic wave device 10a, and a resin layer 3. The surface acoustic wave device 10a includes, for example, the transmission filter 131.

[0049] As shown in FIG. 7, the mounting substrate 2 has a main surface 21. The surface acoustic wave device 10a is disposed on the main surface 21 of the mounting substrate 2.

[0050] The mounting substrate 2 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are laminated in the first direction D1. The plurality of conductive layers are formed in a predetermined pattern defined for each layer. Each of the plurality of conductive layers includes one or more conductor portions in a plane orthogonal to the first direction D1. The material of each conductive layer is, for example, copper. The mounting substrate 2 is, for example, an HTCC (High Temperature Co-fired Ceramics) substrate. The mounting substrate 2 is not limited to a resin multilayer substrate, and may be, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate, a printed wiring board, or a resin multilayer substrate.

[0051] Also, the mounting substrate 2 is not limited to an HTCC substrate, and may be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a predetermined pattern defined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern defined for each layer. The conductive layer may include one or more rewiring portions. In the wiring structure, among the two surfaces facing each other in the thickness direction of the multilayer structure, the first surface is the main surface 21 of the mounting substrate 2. The wiring structure may be, for example, an interposer. The interposer may be an interposer using a silicon substrate or a substrate composed of multiple layers.

[0052] Also, an insulating layer 23 and a plurality of electrodes 24 are arranged on the main surface 21 of the mounting substrate 2.

[0053] The insulating layer 23 has electrical insulation. The insulating layer 23 is, for example, a solder resist. The insulating layer 23 covers, for example, the portion of the main surface 21 of the mounting substrate 2 other than the plurality of electrodes 24.

[0054] The plurality of electrodes 24 are connected one-to-one with the plurality of external connection electrodes 40 of the elastic wave device 10a. Each of the plurality of external connection electrodes 40 is in direct contact with each of the plurality of electrodes 24. "Each of the plurality of external connection electrodes 40 is in direct contact with each of the plurality of electrodes 24" means that at least a part of the external connection electrode 40 and at least a part of the electrode 24 are in direct contact. That is, if there is a portion where the external connection electrode 40 and the electrode 24 are in contact without an intermediate layer such as solder, the external connection electrode 40 and the electrode 24 may be joined by solder or the like. Among the plurality of electrodes 24, the electrode 24 connected to the second connection electrode 42 is connected to the ground via the mounting substrate 2. Thereby, the shielding effect of the external shield layer 30 is improved.

[0055] Each of the plurality of electrodes 24 includes a land electrode and a convex portion 241 disposed on the land electrode. The convex portion 241 is formed, for example, by plating a metal material on the land electrode. Thereby, the connection between the plurality of electrodes 24 and the plurality of external connection electrodes 40 of the elastic wave device 10b becomes easy.

[0056] (3) Communication device As shown in FIG. 6, the communication device 100 includes a high-frequency module 1, a signal processing circuit 17, and an antenna 16.

[0057] The antenna 16 is connected to the antenna terminal 181 of the high-frequency module 1. The antenna 16 has a transmission function of radiating a transmission signal output from the high-frequency module 1 as radio waves and a reception function of receiving a reception signal as radio waves from the outside and outputting it to the high-frequency module 1.

[0058] The signal processing circuit 17 includes an RF signal processing circuit 171 and a baseband signal processing circuit 172. The signal processing circuit 17 processes the signal passing through the high-frequency module 1. More specifically, the signal processing circuit 17 processes the transmission signal and the reception signal.

[0059] The RF signal processing circuit 171 is, for example, an RFIC (Radio Frequency Integrated Circuit). The RF signal processing circuit 171 performs signal processing on high-frequency signals.

[0060] The RF signal processing circuit 171 performs signal processing such as up-conversion and amplification on the transmission signal transmitted from the baseband signal processing circuit 172, and outputs the transmission signal subjected to the signal processing to the high-frequency module 1. Also, the RF signal processing circuit 171 performs signal processing such as amplification and down-conversion on the reception signal output from the high-frequency module 1, and outputs the reception signal subjected to the signal processing to the baseband signal processing circuit 172.

[0061] The baseband signal processing circuit 172 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 172 performs predetermined signal processing on the transmission signal from outside the signal processing circuit 17. The reception signal processed by the baseband signal processing circuit 172 is used, for example, as an image signal for image display or as an audio signal for a call.

[0062] Also, the RF signal processing circuit 171 also has a function as a control unit that controls the connection of the switch 110 included in the high-frequency module 1 based on the transmission and reception of high-frequency signals (transmission signal, reception signal). Specifically, the RF signal processing circuit 171 switches the connection of the switch 110 of the high-frequency module 1 by a control signal (not shown). Note that the control unit may be provided outside the RF signal processing circuit 171, and may be provided, for example, in the high-frequency module 1 or the baseband signal processing circuit 172.

[0063] (4) Effects The elastic wave device 10a according to Embodiment 2 further includes a cover layer 50. The cover layer 50 has a third main surface 502 and a fourth main surface 501 facing each other. The third main surface 502 of the cover layer 50 faces the first main surface 201 of the substrate 20. The fourth main surface 501 of the cover layer 50 is exposed. The distance H1 in the first direction D1 between the tip surface 402 of the external connection electrode 40 and the first main surface 201 of the substrate 20 is shorter than the distance H2 in the first direction D1 between the fourth main surface 501 of the cover layer 50 and the first main surface 201 of the substrate 20. Accordingly, according to the elastic wave device 10a of Embodiment 2, it is easy to further reduce the height of the high-frequency module including the elastic wave device 10a.

[0064] The high-frequency module 1 according to Embodiment 2 includes an elastic wave device 10a and a mounting substrate 2. The elastic wave device 10a is disposed on the mounting substrate 2. Accordingly, in the high-frequency module 1 according to Embodiment 2, it is possible to reduce the distance between the elastic wave device 10a and the mounting substrate 2. Therefore, it is easy to reduce the height of the high-frequency module 1.

[0065] The communication device 100 according to Embodiment 2 includes a high-frequency module 1 and a signal processing circuit 17 connected to the high-frequency module 1. Accordingly, according to the communication device 100 of Embodiment 2, in the high-frequency module 1, the external shield layer 30 functions as a shield member between the elastic wave device 10a and other components and between two other components. Further, since the elastic wave device 10a is disposed in the high-frequency module 1 with the external connection electrode 40 in direct contact with the electrode 24 of the mounting substrate 2, it is possible to reduce the height of the elastic wave device 10a in the high-frequency module 1.

[0066] (Embodiment 3) (1) Configuration The high-frequency module 1 according to Embodiment 3 includes, for example, a surface acoustic wave device 10b. In the surface acoustic wave device 10b, the distance in the first direction D1 between the tip surface 402 of the external connection electrode 40 and the first main surface 201 of the substrate 20 is longer than the distance in the first direction D1 between the third main surface 502 of the cover layer 50 and the first main surface 201 of the substrate 20. More specifically, the difference between the distance in the first direction D1 between the tip surface 402 of the external connection electrode 40 and the first main surface 201 of the substrate 20 and the distance in the first direction D1 between the third main surface 502 of the cover layer 50 and the first main surface 201 of the substrate 20 is 35 μm or less.

[0067] In the high-frequency module 1 according to Embodiment 3, the electrode 24 of the mounting substrate 2 is, for example, a land electrode. The thickness of the electrode 24 in the first direction D1 is smaller than the thickness of the insulating layer 23 in the first direction D1.

[0068] Thereby, in the surface acoustic wave device 10b, the connectivity between the external connection electrode 40 and the electrode 24 of the mounting substrate 2 is improved as compared with the surface acoustic wave device 10 and the surface acoustic wave device 10a. In addition, the high-frequency module 1 can reduce the thickness in the first direction D1.

[0069] In the high-frequency module 1 according to Embodiment 3, as shown in FIG. 8, in the first direction D1, the surface acoustic wave device 10b is in contact with the insulating layer 23. According to the high-frequency module 1 according to Embodiment 3, the thickness of the high-frequency module 1 in the first direction D1 can be reduced. Further, in the high-frequency module 1, since the surface acoustic wave device 10b is in contact with the insulating layer 23 in the first direction D1, the surface acoustic wave device 10b is stably arranged on the mounting substrate 2.

[0070] (2) Effects In the high-frequency module 1 according to Embodiment 3, the mounting substrate 2 includes an insulating layer 23 disposed on the main surface 21 on which the surface acoustic wave device 10b is disposed. The surface acoustic wave device 10b is in contact with the insulating layer 23 of the mounting substrate 2 in the first direction D1. Thereby, according to the high-frequency module 1 according to Embodiment 3, the adhesion of the surface acoustic wave device 10b to the mounting substrate 2 is improved. Therefore, it becomes possible to reduce the height of the high-frequency module 1.

[0071] (Modification) The high-frequency module 1 according to a modification of Embodiment 3 includes a surface acoustic wave device 10.

[0072] As shown in FIG. 9, in the high-frequency module 1 according to a modification of Embodiment 3, the electrode 24 has a convex portion 241 in addition to the land electrode shown in FIG. 8. Thereby, it becomes possible to reduce the thickness of the high-frequency module 1 in the first direction D1, and the connection between the external connection electrode 40 of the surface acoustic wave device 10 and the electrode 24 of the mounting substrate 2 is ensured.

[0073] Similarly, the high-frequency module 1 according to Embodiment 3 may include a surface acoustic wave device 10a. Specifically, it has the same configuration as the high-frequency module 1 shown in FIG. 9, and the convex portion 241 of the electrode 24 becomes larger.

[0074] Also with the above configuration, similar to the high-frequency module according to Embodiment 3, the adhesion of the surface acoustic wave device 10 or 10a to the mounting substrate 2 is improved. Therefore, it becomes possible to reduce the height of the high-frequency module 1.

[0075] (Embodiment 4) (1) Configuration The high-frequency module 1 according to Embodiment 4 includes, for example, a surface acoustic wave device 10. In the high-frequency module 1 according to Embodiment 4, as shown in FIG. 10, within the arrangement region R1 of the main surface 21 of the mounting substrate 2, the insulating layer 23 does not exist.

[0076] More specifically, in the high-frequency module 1 according to Embodiment 4, as shown in FIG. 10, in the arrangement region R1 of the main surface 21 of the mounting substrate 2, there is no insulating layer 23. Here, the "arrangement region R1 of the main surface 21 of the mounting substrate 2" refers to the region of the main surface 21 of the mounting substrate 2 that overlaps with the elastic wave device 10 in a plan view from the first direction D1.

[0077] In the high-frequency module 1 according to Embodiment 4, since the elastic wave device 10 and the insulating layer 23 are not in contact, a part of the resin layer 3 is formed between the elastic wave device 10 and the main surface 21 of the mounting substrate 2. Therefore, the connection between the external connection electrode 40 of the elastic wave device 10 and the electrode 24 of the mounting substrate 2 is ensured.

[0078] (2) Effects In the high-frequency module 1 according to Embodiment 4, the mounting substrate 2 includes an insulating layer 23 disposed on the main surface 21 where the elastic wave device 10 is disposed. In the arrangement region R1 of the main surface 21 of the mounting substrate 2, there is no insulating layer 23. The arrangement region R1 of the main surface 21 of the mounting substrate 2 overlaps with the elastic wave device 10 in a plan view from the first direction D1. Thereby, in the high-frequency module 1 according to Embodiment 4, it is possible to reduce the distance in the first direction D1 between the elastic wave device 10 and the mounting substrate 2. Therefore, it is possible to make the high-frequency module 1 thinner.

[0079] (Modification 1) In the high-frequency module 1 according to Modification 1 of Embodiment 4, as shown in FIG. 11, on the main surface 21 of the mounting substrate 2, the thickness of the insulating layer 23 in the first direction D1 is not uniform between the arrangement region R1 and the region other than the arrangement region R1.

[0080] More specifically, in the high-frequency module 1 according to Embodiment 4, as shown in FIG. 11, within the arrangement region R1 on the main surface 21 of the mounting substrate 2, the thickness of the insulating layer 23 in the first direction D1 is smaller than the thickness of the insulating layer 23 in the first direction D1 outside the arrangement region R1. Even with this configuration, similarly, it is possible to further reduce the height of the high-frequency module 1. Note that in FIG. 11, the high-frequency module 1 has the surface acoustic wave device 10b, but the high-frequency module 1 may include the surface acoustic wave device 10 or 10a.

[0081] In the high-frequency module 1 according to Modification 1 of Embodiment 4, the mounting substrate 2 includes the insulating layer 23 disposed on the main surface 21 where the surface acoustic wave device 10b is disposed. In the arrangement region R1 on the main surface 21 of the mounting substrate 2, the thickness of the insulating layer 23 in the first direction D1 is smaller than the thickness of the insulating layer 23 in the first direction D1 outside the arrangement region R1. Thereby, in the high-frequency module 1 according to Modification 1 of Embodiment 4, it is possible to reduce the distance in the first direction D1 between the surface acoustic wave device 10b and the mounting substrate 2. Therefore, it is possible to reduce the height of the high-frequency module 1.

[0082] (Modification 2) In the high-frequency module 1 according to Modification 2 of Embodiment 4, similar to Modification 1 of Embodiment 4, as shown in FIG. 12, on the main surface 21 of the mounting substrate 2, the thickness of the insulating layer 23 in the first direction D1 is not uniform between the arrangement region R1 and the region outside the arrangement region R1.

[0083] More specifically, in the high-frequency module 1 according to Embodiment 4, as shown in FIG. 12, within the arrangement region R1 on the main surface 21 of the mounting substrate 2, the thickness of the insulating layer 23 in the first direction D1 is smaller than the thickness of the insulating layer 23 outside the arrangement region R1 in the first direction D1. Even with this configuration, it is similarly possible to further reduce the height of the high-frequency module 1. In the high-frequency module 1 shown in FIG. 12, the electrode 24 does not have a convex portion 241, and the thickness of the electrode 24, which is a land electrode, in the first direction D1 is smaller than the thickness of the insulating layer 23 in the first direction D1 in the arrangement region R1. Here, the thickness of the electrode 24 in the first direction D1 may be the same as the thickness of the insulating layer 23 outside the arrangement region R1 in the first direction D1. In the high-frequency module 1 according to Modification 2 of Embodiment 4, similar to the high-frequency module 1 according to Modification 1 of Embodiment 4, it is possible to reduce the height of the high-frequency module 1.

[0084] (Embodiment 5) (1) Configuration The high-frequency module 1 according to Embodiment 5 has the same configuration as the high-frequency module 1 according to Embodiment 4. In the high-frequency module 1 according to Embodiment 5, the mounting substrate 2 is provided with an electrode 25 on the main surface 21. The electrode 25 is, for example, a land electrode and is connected to the external shield layer 30 of the surface acoustic wave devices 10, 10a, or 10b. The electrode 25 corresponds to the second electrode of the present disclosure. The electrode 25 is connected to the ground through the mounting substrate 2, for example.

[0085] In the high-frequency module 1 according to Embodiment 5, as shown in FIG. 13, an electrode 25 is disposed on the main surface 21 of the mounting substrate 2. The electrode 25 is connected to the external shield layer 30 of the surface acoustic wave device 10. More specifically, the electrode 25 of the mounting substrate 2 and the external shield layer 30 of the surface acoustic wave device 10 are connected by a solder 251. Note that the electrode 25 of the mounting substrate 2 may have a frame shape along the outer peripheral edge of the arrangement region R1. Further, the mounting substrate 2 may include a plurality of electrodes 25 along the outer peripheral edge of the arrangement region R1, and each of the plurality of electrodes 25 may be connected to the external shield layer 30 of the surface acoustic wave device 10 by a plurality of solders 251. Thereby, since the external shield layer 30 is connected to the ground not only by the second connection electrode 42 but also by the electrode 25, the shielding property of the external shield layer 30 is improved.

[0086] (2) Effect In the high-frequency module 1 according to Embodiment 5, the mounting substrate 2 has an electrode 24 connected to the external connection electrode 40 and an electrode 25 connected to the external shield layer 30 of the surface acoustic wave device 10. Thereby, in the high-frequency module 1 according to Embodiment 5, it is possible to improve the shielding property of the external shield layer 30 of the surface acoustic wave device 10.

[0087] (Modification Example 1) The high-frequency module 1 according to Modification Example 1 of Embodiment 5 has the same configuration as the high-frequency module 1 according to Modification Example 1 of Embodiment 4. The high-frequency module 1 according to Modification Example 1 of Embodiment 5 has an electrode 25 connected to the external shield layer 30 of the surface acoustic wave device 10.

[0088] More specifically, as shown in FIG. 14, in the high-frequency module 1 according to Modification Example 1 of Embodiment 5, an electrode 25 is disposed on the main surface 21 of the mounting substrate 2. The electrode 25 is connected to the external shield layer 30 of the surface acoustic wave device 10. Also with this configuration, since the external shield layer 30 is connected to the ground not only by the second connection electrode 42 but also by the electrode 25, the shielding property of the external shield layer 30 is improved.

[0089] (Modification Example 2) The high-frequency module 1 according to Modification 2 of Embodiment 5 has the same configuration as the high-frequency module 1 according to Modification 2 of Embodiment 4. The high-frequency module 1 according to Modification 1 of Embodiment 5 has an electrode 25 connected to the external shield layer 30 of the elastic wave device 10.

[0090] More specifically, as shown in FIG. 15, in the high-frequency module 1 according to Modification 2 of Embodiment 5, the electrode 25 is disposed on the main surface 21 of the mounting substrate 2. The electrode 25 is connected to the external shield layer 30 of the elastic wave device 10. Also with this configuration, since the external shield layer 30 is connected to the ground not only by the second connection electrode 42 but also by the electrode 25, the shielding property of the external shield layer 30 is improved.

[0091] (Embodiment 6) (1) Configuration In the high-frequency module 1 according to Embodiment 6, similar to the high-frequency module 1 according to Embodiment 3, the elastic wave device 10b is in contact with the insulating layer 23 in the first direction D1. In the high-frequency module 1 according to Embodiment 6, further, in the arrangement region R1, a second region R12 where the elastic wave device 10b is in contact with the insulating layer 23 in the first direction D1 surrounds a first region R11 where the thickness of the insulating layer 23 in the first direction D1 is small or the insulating layer 23 does not exist.

[0092] In the high-frequency module 1 according to Embodiment 6, as shown in FIGS. 16 and 17, in the first region R11 of the arrangement region R1, the insulating layer 23 does not exist. Note that in FIG. 16, the resin layer 3 is omitted. Also, in the high-frequency module 1 according to Embodiment 6, as shown in FIGS. 16 and 17, in the second region R12 of the arrangement region R1, the elastic wave device 10b is in contact with the insulating layer 23 in the first direction D1. And, as shown in FIGS. 16 and 17, the second region R12 surrounds the first region R11.

[0093] In the high-frequency module 1 according to Embodiment 6, in the second region R12, the surface acoustic wave device 10b is in contact with the insulating layer 23 in the first direction D1. Further, in the high-frequency module 1 according to Embodiment 6, since the second region R12 surrounds the first region R11 in a plan view from the first direction D1, the first region R11 can be configured not to have the resin layer 3. Thereby, it is possible to reduce the generation of stress in the resin layer 3 in the direction of peeling the mounting substrate 2 and the surface acoustic wave device 10b in the first direction D1.

[0094] Further, in the high-frequency module 1 according to Embodiment 6, in the first region R11, the thickness of the insulating layer 23 in the first direction D1 can be made smaller than the thickness of the insulating layer 23 in the first direction D1 in the second region R12. Also with this configuration, in the second region R12, the surface acoustic wave device 10b is in contact with the insulating layer 23 in the first direction D1. Further, in the high-frequency module 1 according to Embodiment 6, the second region R12 surrounds the first region R11 in a plan view from the first direction D1. Therefore, it becomes easy to configure the first region R11 not to have the resin layer 3.

[0095] (2) Effect In the high-frequency module 1 according to Embodiment 6, the arrangement region R1 of the main surface 21 of the mounting substrate 2 that overlaps the surface acoustic wave device 10b in a plan view from the first direction D1 includes the first region R11 and the second region R12. In the first region R11, the thickness of the insulating layer 23 in the first direction D1 is smaller than the thickness of the insulating layer 23 in the first direction D1 in the second region R12, or the insulating layer 23 does not exist. In the second region R12, the surface acoustic wave device 10b is in contact with the insulating layer 23 of the mounting substrate 2 in the first direction D1. The second region R12 surrounds the first region R11. Thereby, in the high-frequency module 1 according to Embodiment 6, the surface acoustic wave device 10b is less likely to be peeled off from the mounting substrate 2.

[0096] (Embodiment 7) (1) Configuration In the high-frequency module 1a according to Embodiment 7, similarly to the high-frequency module 1 according to Embodiment 6, in the arrangement region R1, a second region R12 where the surface acoustic wave device 10c contacts the insulating layer 23 in the first direction D1 surrounds a first region R11 where the thickness of the insulating layer 23 in the first direction D1 is smaller than that of the second region R12 or the insulating layer 23 does not exist. In the high-frequency module 1a according to Embodiment 7, further, the surface acoustic wave device 10c does not have a cover layer 50.

[0097] More specifically, in the high-frequency module 1a according to Embodiment 7, as shown in FIG. 18, in the first region R11 of the arrangement region R1, the insulating layer 23 does not exist. Also, in the high-frequency module 1a according to Embodiment 7, as shown in FIG. 18, in the second region R12 of the arrangement region R1, the surface acoustic wave device 10b contacts the insulating layer 23 in the first direction D1. And, as shown in FIG. 18, the second region R12 surrounds the first region R11.

[0098] Also, in the high-frequency module 1a according to Embodiment 7, as shown in FIG. 18, a hollow space SP1 is formed between the substrate 20 of the surface acoustic wave device 10c and the mounting substrate 2. In a plan view from the first direction D1, the hollow space SP1 overlaps with the first region R11.

[0099] As described above, since the surface acoustic wave device 10b contacts the insulating layer 23 in the first direction D1 in the second region R12, even if the resin layer 3 is formed after mounting the surface acoustic wave device 10c on the mounting substrate 2, the resin layer 3 does not enter the hollow space SP1. Therefore, in the high-frequency module 1a according to Embodiment 7, a state where the resin layer 3 does not exist in the hollow space SP1 is maintained. Therefore, in the high-frequency module 1a according to Embodiment 7, even if the surface acoustic wave device 10c does not have a cover layer 50, the functional electrodes 60 of the surface acoustic wave device 10c can be kept in a state of being arranged in the hollow space SP1.

[0100] Therefore, in the high-frequency module 1a according to Embodiment 7, since the surface acoustic wave device 10c does not have a cover layer 50, it is possible to reduce the height of the surface acoustic wave device 10c, and thereby it is possible to reduce the height of the high-frequency module 1.

[0101] (2) Effect In the high-frequency module 1a according to Embodiment 7, a hollow space SP1 is formed between the substrate 20 of the elastic wave device 10c and the mounting substrate 2. In a plan view from the first direction D1, the hollow space SP1 overlaps with the first region R11. Thereby, in the high-frequency module 1 according to Embodiment 7, it becomes possible to further reduce the distance in the first direction D1 between the substrate 20 of the elastic wave device 10c and the mounting substrate 2. Therefore, it becomes possible to reduce the height of the elastic wave device 10c and miniaturize the high-frequency module 1.

[0102] (Embodiment 8) (1) Configuration The high-frequency module 1 according to Embodiment 8 further includes a first component 4 and a second component 5. In a plan view from the first direction D1, an elastic wave device 10 is disposed between the first component 4 and the second component 5.

[0103] As shown in FIG. 19, the high-frequency module 1 according to Embodiment 8 includes a first component 4 and a second component 5. The first component 4 includes, for example, a power amplifier 151. The second component 5 includes, for example, a low-noise amplifier 152.

[0104] Further, the high-frequency module 1 according to Embodiment 8 includes, for example, a plurality (three in FIG. 19) of elastic wave devices 10 as shown in FIG. 19. The plurality of elastic wave devices 10 include, for example, a transmission filter 131 and a reception filter 132. In the high-frequency module 1 according to Embodiment 8, the plurality of elastic wave devices 10 include, for example, a reception filter (not shown in FIG. 7).

[0105] In the high-frequency module 1 according to Embodiment 8, in a plan view from the first direction D1, an elastic wave device 10 is disposed between the first component 4 and the second component 5. Here, "in a plan view from the first direction D1, an elastic wave device 10 is disposed between the first component 4 and the second component 5" means that the elastic wave device 10 is disposed on a line segment connecting any point included in the first component 4 and any point included in the second component 5.

[0106] In the high-frequency module 1 according to Embodiment 8, in a plan view from the first direction D1, any one of the plurality of elastic-wave devices 10 is disposed between the first component 4 and the second component 5. That is, at least one elastic-wave device 10 is disposed on a line segment connecting an arbitrary point included in the first component 4 and an arbitrary point included in the second component 5. More specifically, in a plan view from the first direction D1, the first component 4, the plurality of elastic-wave devices 10, and the second component 5 are arranged in this order along the second direction D2. The plurality of elastic-wave devices 10 are arranged in a third direction D3 orthogonal to the second direction D2 between the first component 4 and the second component 5.

[0107] In the high-frequency module 1 according to Embodiment 8, when looking from the first component 4 to the second component 5, the plurality of elastic-wave devices 10 are arranged without gaps. Here, "when looking from the first component 4 to the second component 5, the plurality of elastic-wave devices 10 are arranged without gaps" means that in a plan view from the direction from the first component 4 toward the second component 5, the plurality of elastic-wave devices 10 are arranged so that no gaps are formed. Specifically, in the high-frequency module 1 according to Embodiment 8, in a plan view from the second direction D2, the plurality of elastic-wave devices 10 are arranged so that no gaps are formed.

[0108] Thereby, in the high-frequency module 1 according to Embodiment 8, the isolation between the first component 4 and each of the plurality of elastic-wave devices 10 can be improved. Also, the isolation between the second component 5 and each of the plurality of elastic-wave devices 10 can be improved. Further, the isolation between the first component 4 and the second component 5 can be improved.

[0109] (2) Effect The high-frequency module 1 according to Embodiment 8 further includes a first component 4 and a second component 5. In a plan view from the first direction D1, an elastic wave device 10 is disposed between the first component 4 and the second component 5. Thereby, according to the high-frequency module 1 according to Embodiment 8, it is possible to improve the isolation between the first component 4 and the elastic wave device 10, between the elastic wave device 10 and the second component 5, and between the first component 4 and the second component 5.

[0110] Further, the high-frequency module 1 according to Embodiment 8 includes a plurality of elastic wave devices 10. One of the plurality of elastic wave devices 10 is disposed on a straight line connecting the first component 4 and the second component 5. When looking from the first component 4 to the second component 5, the plurality of elastic wave devices 10 are arranged without gaps. Thereby, according to the high-frequency module 1 according to Embodiment 8, it is possible to improve the isolation between the first component 4 and the elastic wave device 10, between the elastic wave device 10 and the second component 5, and between the first component 4 and the second component 5. Further, in the high-frequency module 1, since a plurality of elastic wave devices 10 are disposed between the first component 4 and the second component 5, the isolation between the first component 4 and the second component 5 is likely to be improved.

[0111] (Embodiment 9) (1) Configuration The high-frequency module 1 according to Embodiment 9 includes a first component 4 and a second component 5, similarly to the high-frequency module 1 according to Embodiment 8. In a plan view from the first direction D1, a plurality of elastic wave devices 10 are disposed between the first component 4 and the second component 5. The plurality of elastic wave devices 10 are in contact with each other.

[0112] In the high-frequency module 1 according to Embodiment 9, as shown in FIG. 20, a plurality of surface acoustic wave devices 10 are in contact with each other. More specifically, among the plurality of surface acoustic wave devices 10, the external shield layer 30 of one surface acoustic wave device 10 is in contact with the external shield layer 30 of another surface acoustic wave device 10. One surface acoustic wave device 10 corresponds to the first surface acoustic wave device of the present disclosure. The other surface acoustic wave device 10 corresponds to the second surface acoustic wave device of the present disclosure. Thereby, in the high-frequency module 1 according to Embodiment 9, the isolation between the first component 4 and the second component 5 is further improved. In this case, for example, as shown in FIG. 21, the plurality of surface acoustic wave devices 10 may be arranged in a straight line in the third direction D3.

[0113] (2) Effect In the high-frequency module 1 according to Embodiment 9, the plurality of surface acoustic wave devices 10 include the first surface acoustic wave device 10 and the second surface acoustic wave device 10. The external shield layer 30 of the first surface acoustic wave device 10 is in contact with the external shield layer 30 of the second surface acoustic wave device 10. Thereby, in the high-frequency module 1 according to Embodiment 9, the effect of improving the isolation between the first component 4 and the second component 5 by the external shield layer 30 of the surface acoustic wave device 10 is further enhanced.

[0114] (Modification 1) In the high-frequency module 1 according to Embodiment 9, as shown in FIG. 20, a plurality of surface acoustic wave devices 10 are in contact with each other. More specifically, the plurality of surface acoustic wave devices 10 are arranged in a straight line in the third direction D3. Also with this configuration, the effect of improving the isolation between the first component 4 and the second component 5 by the external shield layer 30 of the surface acoustic wave device 10 is further enhanced.

[0115] (Other Modifications) The high-frequency module 1 according to Embodiment 2 includes the surface acoustic wave device 10a, but may include the surface acoustic wave device 10 or the surface acoustic wave device 10b instead of or in addition to the surface acoustic wave device 10a.

[0116] Further, the high-frequency module 1 according to Embodiment 8 or 9 may include the surface acoustic wave devices 10a, 10b, or 10c instead of the surface acoustic wave device 10.

[0117] Further, in the communication device 100 according to the second embodiment, the high-frequency module 1 included in the communication device 100 may include the surface acoustic wave device 10 or the surface acoustic wave device 10b instead of, or in addition to, the surface acoustic wave device 10a.

[0118] Further, the communication device 100 according to the second embodiment may include the high-frequency module 1 according to any one of the third to eighth embodiments.

[0119] Further, the high-frequency module 1 according to the second to ninth embodiments may have an external shield layer covering the resin layer 3. Here, the external shield layer of the high-frequency module 1 may be in contact with the external shield layer 30 of the surface acoustic wave device 10. Thereby, it is possible to reduce the size of the high-frequency module 1 and improve the shielding effect of the external shield layer of the high-frequency module 1.

[0120] (Aspect) The surface acoustic wave device (10 to 10c) according to the first aspect includes a substrate (20), an external connection electrode (40), and an external shield layer (30). The substrate (20) has a first main surface (201) and a second main surface (202) facing each other, and a side surface (203) connecting the first main surface (201) and the second main surface (202). The external connection electrode (40) is disposed on the first main surface (201) of the substrate (20). The external shield layer (30) is disposed on the side surface (203) of the substrate (20). The tip surface (402) of the external connection electrode (40) is exposed.

[0121] According to the surface acoustic wave device (10 to 10c) having the above configuration, in a module in which a plurality of components including the surface acoustic wave device (10 to 10c) are arranged, the external shield layer (30) functions as a shield member between the surface acoustic wave device (10 to 10c) and other components, and between two other components. Further, in the surface acoustic wave device (10 to 10c), since the external connection electrode (40) directly contacts the electrode of the mounting substrate of the module, it is possible to reduce the height of the surface acoustic wave device (10 to 10c) in the high-frequency module (1).

[0122] The surface acoustic wave device (10) according to the second aspect further includes a cover layer (50) in the first aspect. The cover layer (50) has a third main surface (502) and a fourth main surface (501) facing each other. The third main surface (502) of the cover layer (50) faces the first main surface (201) of the substrate (20). The fourth main surface (501) of the cover layer (50) is exposed. The tip surface (402) of the external connection electrode (40) is disposed on the same plane as the fourth main surface (501) of the cover layer (50).

[0123] According to the surface acoustic wave device (10) having the above configuration, in a module including the surface acoustic wave device (10), it is possible to reduce the distance between the surface acoustic wave device (10) and the mounting substrate of the module. Therefore, it is easy to reduce the height of the module including the surface acoustic wave device (10).

[0124] The surface acoustic wave device (10) according to the third aspect further includes a cover layer (50) in the first aspect. The cover layer (50) has a third main surface (502) and a fourth main surface (501) facing each other. The third main surface (502) of the cover layer (50) faces the first main surface (201) of the substrate (20). The fourth main surface (501) of the cover layer (50) is exposed. The distance (H1) in the first direction (D1) between the tip surface (402) of the external connection electrode (40) and the first main surface (201) of the substrate (20) is shorter than the distance (H2) in the first direction (D1) between the fourth main surface (501) of the cover layer (50) and the first main surface (201) of the substrate (20). The first direction (D1) is the thickness direction of the substrate (20).

[0125] According to the surface acoustic wave device (10) having the above configuration, it is easy to further reduce the height of the high-frequency module (1) including the surface acoustic wave device (10).

[0126] The high-frequency module (1; 1a) according to the fourth aspect includes the surface acoustic wave device (10 to 10c) according to any one of the first to third aspects and a mounting substrate (2). The surface acoustic wave device (10 to 10c) is disposed on the mounting substrate (2).

[0127] According to the high-frequency module (1; 1a) according to the above configuration, it is possible to reduce the distance between the elastic wave device (10 to 10c) and the mounting substrate (2). Therefore, it becomes easy to reduce the height of the high-frequency module 1.

[0128] In the high-frequency module (1; 1a) according to the fifth aspect, in the high-frequency module (1; 1a) according to the fourth aspect, the mounting substrate (2) includes an insulating layer (23) disposed on the main surface (21) where the elastic wave device (10 to 10c) is disposed. The elastic wave device (10 to 10c) is in contact with the insulating layer (23) of the mounting substrate (2) in the first direction (D1). The first direction (D1) is the thickness direction of the substrate (20).

[0129] According to the high-frequency module (1; 1a) according to the above configuration, the adhesion of the elastic wave device (10 to 10c) to the mounting substrate (2) is improved. Therefore, it becomes possible to reduce the height of the high-frequency module (1; 1a).

[0130] In the high-frequency module (1; 1a) according to the sixth aspect, in the fifth aspect, the arrangement region (R1) of the main surface (21) of the mounting substrate (2) that overlaps the elastic wave device (10 to 10c) in a plan view from the first direction (D1) includes a first region (R11) and a second region (R12). In the first region (R11), the thickness of the insulating layer (23) in the first direction (D1) is smaller than the thickness of the insulating layer (23) in the first direction (D1) in the second region (R12), or the insulating layer (23) does not exist. In the second region (R12), the elastic wave device (10 to 10c) is in contact with the insulating layer (23) of the mounting substrate (2) in the first direction (D1). The second region (R12) surrounds the first region (R11).

[0131] According to the high-frequency module (1; 1a) according to the above aspect, the elastic wave device (10 to 10c) is less likely to be peeled off from the mounting substrate (2).

[0132] In the high-frequency module (1a) according to the seventh aspect, in the sixth aspect, a hollow space (SP1) is formed between the substrate (20) of the surface acoustic wave device (10c) and the mounting substrate (2). In a plan view from the first direction (D1), the hollow space (SP1) overlaps with the first region (R11).

[0133] According to the high-frequency module (1a) according to the above aspect, it is possible to further reduce the distance in the first direction (D1) between the substrate (20) of the surface acoustic wave device (10c) and the mounting substrate (2). Therefore, it is possible to reduce the height of the surface acoustic wave device (10c) and miniaturize the high-frequency module (1a).

[0134] In the high-frequency module (1) according to the eighth aspect, in the fourth aspect, the mounting substrate (2) includes an insulating layer (23) disposed on the main surface (21) on which the surface acoustic wave devices (10 to 10b) are disposed. In the arrangement region (R1) of the main surface (21) of the mounting substrate (2), the thickness of the insulating layer (23) in the first direction (D1) is smaller than the thickness of the insulating layer (23) in the first direction (D1) of the portion of the main surface (21) of the mounting substrate (2) other than the arrangement region (R1), or the insulating layer (23) does not exist. The first direction (D1) is the thickness direction of the substrate (20). The arrangement region (R1) of the main surface (21) of the mounting substrate (2) overlaps with the surface acoustic wave devices (10 to 10b) in a plan view from the first direction (D1).

[0135] According to the high-frequency module (1) having the above configuration, it is possible to reduce the distance in the first direction (D1) between the surface acoustic wave devices (10 to 10b) and the mounting substrate (2). Therefore, it is possible to reduce the height of the high-frequency module (1).

[0136] In the high-frequency module (1) according to the ninth aspect, in any one of the fourth to eighth aspects, the mounting substrate (2) has a first electrode (24) connected to an external connection electrode and a second electrode (25) connected to an external shield layer (30) of the surface acoustic wave devices (10 to 10b).

[0137] According to the high-frequency module (1) according to the above aspect, it is possible to improve the shielding property of the external shield layer (30) of the elastic wave device (10 to 10b).

[0138] The high-frequency module (1; 1a) according to the tenth aspect further includes a first component (4) and a second component (5) in any one of the fourth to ninth aspects. In a plan view from the first direction (D1), an elastic wave device (10) is disposed between the first component (4) and the second component (5). The first direction (D1) is the thickness direction of the substrate (20).

[0139] According to the high-frequency module (1; 1a) according to the above aspect, it is possible to improve the isolation between the first component (4) and the elastic wave device (10 to 10c), between the elastic wave device (10 to 10c) and the second component (5), and between the first component (4) and the second component (5).

[0140] The high-frequency module (1; 1a) according to the eleventh aspect further includes a plurality of elastic wave devices (10 to 10c), a first component, and a second component in any one of the fourth to ninth aspects. Each of the plurality of elastic wave devices (10 to 10c) is an elastic wave device (10 to 10c) according to any one of the first to third aspects. One of the plurality of elastic wave devices (10 to 10c) is disposed on a straight line connecting the first component (4) and the second component (5). When looking from the first component (4) to the second component (5), the plurality of elastic wave devices (10 to 10c) are arranged without gaps.

[0141] According to the high-frequency module (1; 1a) according to the above aspect, it is possible to improve the isolation between the first component (4) and the elastic wave device (10 to 10c), between the elastic wave device (10 to 10c) and the second component (5), and between the first component (4) and the second component (5). Further, in the high-frequency module (1; 1a), since one elastic wave device (10 to 10c) is disposed between the first component (4) and the second component (5), the isolation between the first component (4) and the second component (5) is likely to be improved.

[0142] In the high-frequency module (1; 1a) according to the 12th aspect, in the 11th aspect, the plurality of surface acoustic wave devices (10) include a first surface acoustic wave device (10 to 10c) and a second surface acoustic wave device (10 to 10c). The external shield layer (30) of the first surface acoustic wave device (10 to 10c) is in contact with the external shield layer (30) of the second surface acoustic wave device (10 to 10c).

[0143] According to the high-frequency module (1; 1a) according to the above aspect, the effect of improving the isolation between the first component (4) and the second component (5) by the external shield layer (30) of the surface acoustic wave device (10) is further enhanced.

[0144] The communication device (100) according to the 13th aspect includes a high-frequency module (1; 1a) and a signal processing circuit (17) connected to the high-frequency module (1; 1a).

[0145] According to the communication device (100) according to the above aspect, in the high-frequency module (1; 1a), the external shield layer (30) functions as a shield member between the surface acoustic wave device (10 to 10c) and other components, and between two other components. Further, since the surface acoustic wave device (10 to 10c) is arranged in the high-frequency module (1; 1a) in a state where the external connection electrode (40) is in direct contact with the electrode (24) of the mounting substrate (2), it is possible to reduce the height of the surface acoustic wave device (10 to 10c) in the high-frequency module (1; 1a).

Explanation of Reference Numerals

[0146] 1, 1a High-frequency module 2 Mounting substrate 21 Main surface 23 Insulating layer 24 Electrode (first electrode) 241 Convex portion 25 Electrode (second electrode) 3 Resin layer 4 First component 5 Second component 16 Antenna 17 Signal processing circuit 18 External connection terminals 181 Antenna terminal 182 Signal output terminal 183 Signal input terminal 110 Switch 111 Common terminal 112, 113 Selection terminals 121 First integration circuit 122 Second integration circuit 131 Transmission filter 132 Reception filter 141 Third integration circuit 142 Fourth integration circuit 151 Power amplifier 152 Low-noise amplifier 171 RF signal processing circuit 172 Baseband signal processing circuit 10, 10a, 10b, 10c Surface acoustic wave devices (surface acoustic wave device, first surface acoustic wave device, second surface acoustic wave device) 20 Substrate 201 First main surface 202 Second main surface 203 Side surface 30 External shield layer 40 External connection electrodes 401 Tip surface 402 Tip surface 41 First connection electrode 42 Second connection electrode 50 Cover layer 501 Fourth main surface 502 Third main surface 60 Functional electrode 70 Wiring layer 71 Wiring part 72 Wiring part 80 Support layer 90 Resin layer 100 Communication device D1 First direction D2 Second direction D3 Third direction H1 Distance H2 Distance R1 Arrangement area R11 First area R12 Second Region SP1 Hollow Space

Claims

1. A substrate having a first main surface and a second main surface facing each other and side surfaces connecting the first main surface and the second main surface; External connection electrodes disposed on the first main surface of the substrate; An external shield layer disposed on a side surface of the substrate; Comprising; The tip surface of the external connection electrode is exposed. An elastic wave device.

2. Further comprising a cover layer having a third main surface and a fourth main surface facing each other; The third main surface of the cover layer faces the first main surface of the substrate; The fourth main surface of the cover layer is exposed; The tip surface of the external connection electrode is disposed on the same plane as the fourth main surface of the cover layer. The elastic wave device according to claim 1.

3. Further comprising a cover layer having a third main surface and a fourth main surface facing each other; The third main surface of the cover layer faces the first main surface of the substrate; The fourth main surface of the cover layer is exposed; The distance in a first direction, which is the thickness direction of the substrate between the tip surface of the external connection electrode and the first main surface of the substrate, is shorter than the distance in the first direction between the fourth main surface of the cover layer and the first main surface of the substrate. The elastic wave device according to claim 1.

4. The elastic wave device according to claim 1; And a mounting substrate on which the elastic wave device is disposed. A high-frequency module.

5. The mounting substrate includes an insulating layer disposed on a main surface on which the elastic wave device is disposed; The elastic wave device is in contact with the insulating layer of the mounting substrate in a first direction, which is the thickness direction of the substrate. The high-frequency module according to claim 4.

6. The arrangement region of the main surface of the mounting substrate that overlaps the elastic wave device in a plan view from the first direction includes a first region and a second region; In the first region, the thickness of the insulating layer in the first direction is smaller than the thickness of the insulating layer in the first direction in the second region, or the insulating layer does not exist; In the second region, the elastic wave device is in contact with the insulating layer of the mounting substrate in the first direction; The second region surrounds the first region. The high-frequency module according to claim 5.

7. A hollow space is formed between the substrate of the elastic wave device and the mounting substrate; In a plan view from the first direction, the hollow space overlaps the first region. The high-frequency module according to claim 6.

8. The mounting substrate includes an insulating layer disposed on a main surface on which the elastic wave device is disposed. In a disposed area of the main surface of the mounting substrate that overlaps with the elastic wave device in a plan view from a first direction that is a thickness direction of the substrate, a thickness of the insulating layer in the first direction is smaller than a thickness of the insulating layer in the first direction in the main surface of the mounting substrate other than the disposed area, or the insulating layer does not exist. The high-frequency module according to claim 4.

9. The mounting substrate has a first electrode connected to the external connection electrode and a second electrode connected to the external shield layer of the elastic wave device. The high-frequency module according to claim 4.

10. further includes a first component and a second component, and in a plan view from a first direction that is a thickness direction of the substrate, the elastic wave device is disposed between the first component and the second component. The high-frequency module according to any one of claims 4 to 9.

11. further includes a plurality of elastic wave devices each of which is the elastic wave device, a first component, and a second component, and any one of the plurality of elastic wave devices is disposed on a straight line connecting the first component and the second component, and when looking from the first component to the second component, the plurality of elastic wave devices are arranged without gaps. The high-frequency module according to any one of claims 4 to 9.

12. The plurality of elastic wave devices include a first elastic wave device and a second elastic wave device, and the external shield layer of the first elastic wave device is in contact with the external shield layer of the second elastic wave device. The high-frequency module according to claim 11.

13. a high-frequency module according to claim 4, and a signal processing circuit connected to the high-frequency module, and a communication device including the same.

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