Method for producing corrosion-resistant coating film and method for producing electrostatic chuck device

Abstract

To provide a method for producing a corrosion-resistant coating film capable of improving corrosion resistance of a dielectric substrate, and a method for producing an electrostatic chuck member capable of improving corrosion resistance by producing a corrosion-resistant coating film by the above method.SOLUTION: A method for producing a corrosion-resistant coating film comprises the steps for: coating a surface of a dielectric substrate with a paste in which particles of a corrosion-resistant material are dispersed, to form a coating of the corrosion-resistant material; and irradiating the coating with laser light and forming a corrosion-resistant coating film by sintering the corrosion-resistant material. The corrosion-resistant material is at least one selected from the group consisting of YOF, YF3, MgF2, and MgAl2O4. The dielectric substrate is an aluminum oxide-silicon carbide composite sintered body.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a corrosion-resistant film and a method for manufacturing an electrostatic chuck device.

Background Art

[0002] Conventionally, in the manufacturing lines of semiconductor devices such as ICs, LSIs, and VLSIs, there are processes using halogen-based gases such as fluorine-based gases and chlorine-based gases, which are corrosive gases, and plasmas of these gases. In such processes, for example, after fixing a semiconductor wafer with an electrostatic chuck device, the wafer may be etched or cleaned (plasma cleaning) using the above-mentioned halogen-based gas or plasma.

[0003] An electrostatic chuck device includes a substrate having a mounting surface on one main surface for mounting a wafer, and an electrostatic adsorption electrode that generates an electrostatic force (Coulomb force) between the wafer mounted on the mounting surface. The substrate usually uses a ceramic sintered body (dielectric substrate) as a forming material. On the other hand, the above-mentioned halogen-based gas and plasma are known to exhibit strong corrosiveness to the ceramic members constituting the electrostatic chuck device. Therefore, in the process using the above-mentioned halogen-based gas or plasma, the electrostatic chuck member is likely to be worn out by the halogen-based gas or plasma.

[0004] Regarding the above problems, a technique for improving the corrosion resistance of an electrostatic chuck member is known (for example, see Patent Document 1). Patent Document 1 describes an electrostatic chuck member manufactured using a dielectric substrate containing a material with high corrosion resistance. As materials with high corrosion resistance, yttrium aluminum garnet (Y 3 Al 5 O 12 , hereinafter abbreviated as YAG), and mixtures in which rare earth oxides other than yttrium oxide are added to YAG are disclosed.

[0005] In addition, Patent Document 2 discloses a yttrium-based fluoride sprayed film that is preferably adopted as a low-dust-generating corrosion-resistant film provided on components used in an atmosphere of corrosive plasma.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0007] In recent years, devices using semiconductors have been highly integrated, and semiconductor manufacturing processes have also become diversified. Along with this, after manufacturing an electrostatic chuck device, it may be necessary to improve the corrosion resistance of the electrostatic chuck member, and a technology that can improve the corrosion resistance without damaging the electrostatic chuck device has been demanded. In addition, as an elemental technology, a method for manufacturing a corrosion-resistant film that can solve the above problems has been demanded.

[0008] The present invention has been made in view of such circumstances, and an object thereof is to provide a method for manufacturing a corrosion-resistant film capable of improving the corrosion resistance of a dielectric substrate. Another object is to provide a method for manufacturing an electrostatic chuck member capable of improving the corrosion resistance by manufacturing a corrosion-resistant film by the above method.

Means for Solving the Problems

[0009] To solve the above problems, one aspect of the present invention includes the following aspects.

[0010] [1] A step of applying a paste in which particles of a corrosion-resistant material are dispersed on the surface of a dielectric substrate to form a coating film of the corrosion-resistant material, and a step of irradiating the coating film with laser light to form a corrosion-resistant film in which the corrosion-resistant material is sintered, wherein the corrosion-resistant material is YOF, YF 3 , MgF 2 , and MgAl 2 O 4 and is at least one selected from the group consisting of, and the dielectric substrate is a method for manufacturing a corrosion-resistant film which is an aluminum oxide-silicon carbide composite sintered body.

[0011] [2] The method for manufacturing a corrosion-resistant film according to [1], wherein in the step of forming the coating film, the coating film is formed on a part of the surface.

[0012] [3] A step of forming a corrosion-resistant film on the surface of a dielectric substrate by an aerosol deposition method using fine particles of a corrosion-resistant material, wherein the corrosion-resistant material is YOF, YF 3 , MgF 2 , and MgAl 2 O 4 and is at least one selected from the group consisting of, and the dielectric substrate is a method for manufacturing a corrosion-resistant film which is an aluminum oxide-silicon carbide composite sintered body.

[0013] [4] The method for manufacturing a corrosion-resistant film according to [3], wherein the corrosion-resistant film is formed on a part of the surface.

[0014] [5] A step of forming a corrosion-resistant film on the surface of a dielectric substrate by a high-frequency magnetron sputtering method using a corrosion-resistant material as a target material, wherein the corrosion-resistant material is YOF, YF 3 , MgF 2 , and MgAl 2 O 4 and is at least one selected from the group consisting of, and the dielectric substrate is a method for manufacturing a corrosion-resistant film which is an aluminum oxide-silicon carbide composite sintered body.

[0015] [6] The method for manufacturing a corrosion-resistant film according to [5], wherein the corrosion-resistant film is formed on a part of the surface.

[0016] [7] Prepare an electrostatic chuck device body including an electrostatic chuck member made of an aluminum oxide-silicon carbide composite sintered body, and form a corrosion-resistant coating on the surface of the electrostatic chuck member by the method for manufacturing a corrosion-resistant coating according to any one of [1] to [6]. A method for manufacturing an electrostatic chuck device having these steps.

[0017] [8] Form a corrosion-resistant coating on a part of the surface of an electrostatic chuck member made of an aluminum oxide-silicon carbide composite sintered body by the method for manufacturing a corrosion-resistant coating according to any one of [2], [4], and [6], and manufacture an electrostatic chuck device including the electrostatic chuck member having the corrosion-resistant coating. A method for manufacturing an electrostatic chuck device having these steps.

[0018] [9] Prepare an electrostatic chuck device body including an electrostatic chuck member made of an aluminum oxide-silicon carbide composite sintered body and a temperature control member, and form a corrosion-resistant coating on the surface of the electrostatic chuck member by the method for manufacturing a corrosion-resistant coating according to [5] or [6]. The temperature control member is made of a conductive material. In the step of forming the corrosion-resistant coating, connect the temperature control member to a high-frequency power source and perform a high-frequency magnetron sputtering method. A method for manufacturing an electrostatic chuck device having these steps. [Effect of the Invention]

[0019] According to the present invention, it is possible to provide a method for manufacturing a corrosion-resistant coating capable of improving the corrosion resistance of a dielectric substrate. Further, by manufacturing a corrosion-resistant coating by the above method, it is possible to provide a method for manufacturing an electrostatic chuck member capable of improving corrosion resistance. [Brief Description of the Drawings]

[0020]

Figure 1

Figure 2

Figure 3

Figure 4

Embodiments for Carrying Out the Invention

[0021] 《Method for Manufacturing a Corrosion-Resistant Film》 [First Embodiment] Hereinafter, with reference to FIGS. 1 to 2, a method for manufacturing a corrosion-resistant film according to the first embodiment of the present invention will be described. In all the following drawings, for ease of viewing the drawings, the dimensions, ratios, etc. of each component are appropriately different.

[0022] (Step of forming a coating film) FIGS. 1 and 2 are explanatory diagrams of a method for manufacturing a corrosion-resistant film according to the first embodiment. In the method for manufacturing a corrosion-resistant film of the present embodiment, first, as shown in FIG. 1, a paste in which particles of a corrosion-resistant material are dispersed is applied to the surface 100a of the dielectric substrate 100 to form a coating film 200x of the corrosion-resistant material (step of forming a coating film).

[0023] The dielectric substrate 100 used in the present embodiment is an aluminum oxide (Al 2 O 3 )-silicon carbide (SiC) composite sintered body. By including black SiC, the dielectric substrate 100 is colored black.

[0024] The corrosion-resistant material is at least one selected from the group of YOF (yttrium oxyfluoride), YF 3 , MgF 2 , and MgAl 2 O 4 that has corrosion resistance to corrosive plasma. In addition, generally used corrosion-resistant materials such as diamond and fluorinated compounds can also be applied to the manufacturing method of the present embodiment.

[0025] The specific surface area of the corrosion-resistant material is not particularly limited as long as a corrosion-resistant film can be formed. For example, 0.1 m 2 / g to 100 m2 Those of / g can be used.

[0026] The paste contains a corrosion-resistant material that is an inorganic particle and a dispersion medium for dispersing the corrosion-resistant material. The dispersion medium includes a solvent and may include a binder. Also, as the dispersion medium, a commercially available solvent for screen printing may be used.

[0027] As the solvent, high-boiling organic solvents such as diols such as hexylene glycol and propylene glycol, and terpenes such as terpineol can be used.

[0028] As the binder, cellulose resins such as ethyl cellulose, acrylic resins such as polymethyl methacrylate, and vinyl resins such as polyvinyl butyral can be used.

[0029] The dispersion medium may further appropriately contain commonly used additives such as a leveling agent, a chelating agent, a surfactant, and a thickener.

[0030] Examples of the leveling agent include water, ethylene glycol, polyethylene glycol, and glycerin.

[0031] Examples of the chelating agent include acetylacetone, benzylacetone, and acetic acid.

[0032] By mixing these materials using a disperser such as a three-roll mill, a paste containing a corrosion-resistant material can be obtained.

[0033] By applying the obtained paste to the surface 100a of the dielectric substrate 100, a coating film 200x is formed. In FIG. 1, a coating film 200x is formed on a part of the surface 100a of the dielectric substrate 100, but it may be formed on the entire surface of the dielectric substrate 100.

[0034] The method of applying the paste is not particularly limited, and known printing methods can be adopted. Examples of known printing methods may include, for example, screen printing method or spray coating method.

[0035] By drying the applied paste, a coating film 200x is obtained. The thickness of the coating film 200x may be appropriately adjusted according to the desired corrosion resistance. The thickness of the coating film 200x may be appropriately determined in consideration of the desired corrosion resistance and the necessity of transmission of the laser light L. For example, it may be 0.1 μm to 100 μm, or 0.5 μm to 80 μm, or 1 μm to 50 μm.

[0036] The method of drying the paste is not particularly limited, and examples include leaving it in an atmosphere where the solvent is removed, for example, at room temperature to 200 °C. During drying, appropriate combinations of air blowing and reduced pressure may be used.

[0037] In addition, in order to remove impurities such as binders contained in the coating film 200x, the applied paste or the coating film 200x may be subjected to a degreasing treatment at 200 °C to 600 °C in an inert atmosphere such as nitrogen. Usually, when such a degreasing treatment is performed, the solvent contained in the coating film 200x is also removed.

[0038] That is, to obtain the coating film 200x from the applied paste, it is possible to simply dry the paste, or simply perform a degreasing treatment, or dry it first and then perform a degreasing treatment.

[0039] Next, as shown in FIG. 2, the coating film 200x is irradiated with a laser light L to form a corrosion-resistant film 200 in which the corrosion-resistant material is sintered (step of forming a corrosion-resistant film). Specifically, while scanning the coating film 200x with the laser light L in the region where the corrosion-resistant film 200 is to be formed, the particles of the corrosion-resistant material constituting the coating film 200x are sintered. In FIG. 2, the light source of the laser light L is indicated by the reference symbol LS.

[0040] In this embodiment, "irradiating the coating film 200x with the laser beam L" includes not only directly irradiating the coating film 200x with the laser beam L but also irradiating the film formed on the surface of the coating film 200x. Specifically, the coating film 200x may be directly irradiated with the laser beam L, or the deposit film such as carbon formed on the surface of the coating film 200x may be irradiated. By these means, the coating film 200x is directly or indirectly heated by the laser beam L through the deposit film, and is sintered by the heat caused by the laser beam L.

[0041] When directly irradiating the coating film 200x with the laser beam L, since the dielectric substrate 100 contains black SiC, the dielectric substrate 100 absorbs the laser beam L and generates heat. Therefore, the coating film 200x is sintered by direct heating by the irradiation of the laser beam L and heating by heat transfer from the dielectric substrate 100, and becomes the corrosion-resistant film 200.

[0042] When directly irradiating the coating film 200x with the laser beam L, since it is necessary to irradiate the dielectric substrate 100 with the laser beam L, the thickness of the coating film 200x is preferably 95 μm or less.

[0043] In addition, in order for the dielectric substrate 100 to absorb the laser beam L, it is preferable that the silicon carbide is contained in an amount of 1 part by mass or more with respect to 100 parts by mass of aluminum oxide. From the viewpoint of obtaining a desired dielectric constant and volume resistivity, it is preferable that the silicon carbide is contained in an amount of 1 part by mass or more and 10 parts by mass or less with respect to 100 parts by mass of aluminum oxide in the dielectric substrate 100.

[0044] When irradiating the deposit film provided on the surface of the coating film 200x, the deposit film absorbs the laser beam L and generates heat by the irradiation of the laser beam L.

[0045] Specifically, when a deposit film such as carbon is provided on the coating film 200x and irradiated with the laser beam L, the deposit film is irradiated with the laser beam L and the deposit film is heated, so that the coating film 200x is sintered by heat transfer from the deposit film and becomes the corrosion-resistant film 200.

[0046] Note that part of the laser beam L may pass through the deposit film and irradiate the coating film 200x. In this case, the coating film 200x is sintered by direct heating by the irradiation of the laser beam L and heating by heat transfer from the deposit film heated by the laser beam L, and becomes the corrosion-resistant film 200.

[0047] Furthermore, part of the laser beam L that has reached the coating film 200x may pass through the coating film 200x and irradiate the dielectric substrate 100. In this case, the coating film 200x is sintered by direct heating by the irradiation of the laser beam L and heating by heat transfer from the deposit film and the dielectric substrate 100 heated by the laser beam L, and becomes the corrosion-resistant film 200.

[0048] The irradiation conditions of the laser beam L are not particularly limited as long as the coating film 200x is sintered and the corrosion-resistant film 200 is formed. For example, the condition of irradiating the coating film 200x with an output of 50 W to 1000 W can be mentioned.

[0049] Note that when irradiating the laser beam L, it may start from the position where the laser beam L is directly irradiated on the coating film 200x. Also, the laser beam L may be irradiated on the surface 100a exposed in the vicinity of the coating film 200x to first heat the dielectric substrate 100, and then the laser beam L may be irradiated on the coating film 200x while scanning.

[0050] The thickness of the manufactured corrosion-resistant film 200 may be, for example, 0.02 μm to 90 μm. The thickness of the corrosion-resistant film 200 can be adjusted by controlling the thickness of the coating film 200x.

[0051] According to the method for manufacturing a corrosion-resistant film having the above configuration, it is possible to provide a method for manufacturing a corrosion-resistant film capable of improving the corrosion resistance of a dielectric substrate.

[0052] For example, when forming a corrosion-resistant film by spraying a corrosion-resistant material, it is necessary to make the corrosion-resistant material collide with the dielectric substrate 100 in a molten or semi-molten state. That is, it can be said that the corrosion-resistant material colliding with the dielectric substrate 100 is at a high temperature enough to melt.

[0053] Also, when sintering using a heating device after arranging the corrosion-resistant material on the dielectric substrate 100, the entire dielectric substrate 100 is heated to a temperature equal to or higher than the sintering temperature of the corrosion-resistant material.

[0054] On the other hand, in the method for manufacturing the corrosion-resistant film, a coating film of the corrosion-resistant material is formed by applying a paste containing the corrosion-resistant material. In addition to locally heating with the laser beam L, the corrosion-resistant film 200 can be manufactured without heating the dielectric substrate 100. Therefore, according to the method for manufacturing the corrosion-resistant film of the present embodiment, it is possible to improve the corrosion resistance of the dielectric substrate without exposing the dielectric substrate 100 to a heating environment as compared with the conventionally known methods.

[0055] [Second Embodiment] FIG. 3 is an explanatory diagram of a method for manufacturing a corrosion-resistant film according to the second embodiment. Components common to the first embodiment in the present embodiment are denoted by the same reference numerals, and detailed descriptions thereof are omitted.

[0056] [Step of Forming Corrosion-Resistant Film] In the method for manufacturing a corrosion-resistant film of the present embodiment, as shown in FIG. 3, a corrosion-resistant film 200 is formed on the surface 100a of the dielectric substrate 100 by the aerosol deposition method (hereinafter abbreviated as AD method) using fine particles 210 of a corrosion-resistant material (step of forming a corrosion-resistant film).

[0057] The AD method is a method in which fine particles of a raw material prepared in advance are mixed with a gas to form an aerosol, and the aerosol is sprayed onto an object through a nozzle to form a film. According to the AD method, it is possible to form a film of a corrosion-resistant material at room temperature. Also, according to the AD method, it is possible to form a denser film compared to the film formed by spraying.

[0058] The AD method is carried out, for example, using an aerosol deposition apparatus (hereinafter abbreviated as AD apparatus) 1000 shown in FIG. 3. The AD apparatus 1000 includes a film formation chamber 1100, a stage 1200, and an injection unit 1300.

[0059] The film formation chamber 1100 includes a chamber 1110 that houses an object to be formed into a film (dielectric substrate 100), and a vacuum pump 1120 that evacuates the inside of the chamber 1110. During the implementation of the AD method, the inside of the chamber 1110 is evacuated by the vacuum pump 1120.

[0060] The stage 1200 is an XYZθ stage on which the dielectric substrate 100 is placed. The stage 1200 can change the relative position and orientation (angle) with respect to the nozzle 1320 of the injection unit 1300.

[0061] The injection unit 1300 includes a preparation unit 1310 that prepares an aerosol 220 containing fine particles 210 of a corrosion-resistant material, a nozzle 1320 that ejects the fine particles 210, and a pipe 1330 that connects the preparation unit 1310 and the nozzle 1320. The preparation unit 1310 is disposed outside the chamber 1110, and the nozzle 1320 is disposed inside the chamber 1110 facing the stage 1200.

[0062] As the AD method, a known method can be adopted, such as the method described in Japanese Patent Application Laid-Open No. 2020-525640.

[0063] In the AD method, the raw material can be sprayed onto the entire surface of the object to form a film, or the raw material can be sprayed onto a part of the surface of the object to form a film in a partial region. In FIG. 3, a corrosion-resistant film 200 is formed on a part of the surface 100a of the dielectric substrate 100, but it may be formed on the entire surface of the dielectric substrate 100.

[0064] The particle size range of the fine particles 210 of the corrosion-resistant material can be, for example, 0.1 μm to 20 μm, and may be 0.2 μm to 2 μm.

[0065] The thickness of the corrosion-resistant film 200 to be manufactured may be, for example, 0.01 μm to 90 μm. The thickness of the corrosion-resistant film 200 can be adjusted by controlling the spraying amount and spraying time of the fine particles of the raw material.

[0066] When the adhesion of the obtained corrosion-resistant film 200 to the dielectric substrate 100 is insufficient, the corrosion-resistant film 200 may be further irradiated with the laser light described in the first embodiment to sinter the corrosion-resistant film 200.

[0067] Also, a method for manufacturing a corrosion-resistant film capable of improving the corrosion resistance of the dielectric substrate 100 can be provided by the method for manufacturing a corrosion-resistant film having the above-described configuration. According to the AD method, film formation can be performed at room temperature, so that the corrosion resistance of the dielectric substrate can be improved without exposing the dielectric substrate 100 to a heating environment as compared with the conventionally known methods.

[0068] [Third Embodiment] In the method for manufacturing a corrosion-resistant film of the present embodiment, a corrosion-resistant film 200 is formed on the surface 100a of the dielectric substrate 100 by high-frequency magnetron sputtering using a corrosion-resistant material as a target material (step of forming a corrosion-resistant film). For ease of understanding of the invention, the same reference numerals as those in the first and second embodiments are used for each reference numeral.

[0069] The target material may be a sintered body formed using a corrosion-resistant material, a powdery material that has not been sintered, or a molded body obtained by solidifying a powdery material. In order to improve the sputtering efficiency, the target material may be a sintered body, and a powder or a molded body of a corrosion-resistant material may be disposed on the surface of the sintered body on the side of the dielectric substrate 100. Alternatively, the target material may be a molded body, and a powder of a corrosion-resistant material may be disposed on the surface of the molded body on the side of the dielectric substrate 100.

[0070] The high-frequency magnetron sputtering method is a method in the sputtering method that improves the sputtering efficiency by installing a magnet on the back side of the target and promoting the ionization of the plasma gas by the magnetic field generated on the target surface. The high-frequency magnetron sputtering method can be implemented by using a known high-frequency magnetron sputtering apparatus.

[0071] In the method for manufacturing a corrosion-resistant film of this embodiment, a corrosion-resistant film can be formed on the entire surface of the dielectric substrate 100 as the object, or a corrosion-resistant film can be formed on a partial region of the surface of the object by masking the dielectric substrate 100.

[0072] It is also possible to provide a method for manufacturing a corrosion-resistant film that can improve the corrosion resistance of the dielectric substrate 100 by the method for manufacturing a corrosion-resistant film having the above configuration.

[0073] 《Method for Manufacturing an Electrostatic Chuck Device》 The method for manufacturing an electrostatic chuck device of this embodiment includes a step of preparing an electrostatic chuck device main body including an electrostatic chuck member made of an aluminum oxide-silicon carbide composite sintered body, and a step of forming a corrosion-resistant film on the surface of the electrostatic chuck member by the above-described method for manufacturing a corrosion-resistant film.

[0074] (Step of preparing the electrostatic chuck device main body) First, prepare an electrostatic chuck device main body as shown in FIG. 4. FIG. 4 is a schematic diagram of the electrostatic chuck device main body.

[0075] The electrostatic chuck device main body 1 includes a disk-shaped electrostatic chuck member 2 in a plan view with one main surface (upper surface) side as a mounting surface, and a disk-shaped temperature adjustment base portion 3 with a predetermined thickness provided below the electrostatic chuck member 2 to adjust the electrostatic chuck member 2 to a desired temperature. Further, the electrostatic chuck member 2 and the temperature adjustment base portion 3 are adhered via an adhesive layer 8 provided between the electrostatic chuck member 2 and the temperature adjustment base portion 3.

[0076] <Electrostatic chuck member> The electrostatic chuck member 2 includes a mounting plate 11 whose upper surface is a mounting surface 11a for mounting a plate-like sample W such as a semiconductor wafer, a support plate 12 integrated with the mounting plate 11 and supporting the bottom side of the mounting plate 11, and an electrostatic adsorption electrode 13 provided between the mounting plate 11 and the support plate 12. The electrostatic chuck member 2 may have an insulating material layer 14 that insulates the periphery of the electrostatic adsorption electrode 13.

[0077] In the figure, the electrostatic adsorption electrode 13 is shown as being provided inside the base body (between the mounting plate 11 and the support plate 12), but it is not limited to this. The electrostatic adsorption electrode 13 may be configured to be provided on the side of the base body opposite to the mounting surface, that is, below the support plate 12.

[0078] (Mounting plate, support plate) The mounting plate 11 and the support plate 12 are disk-shaped members having the same shape on the overlapping surfaces. The mounting plate 11 and the support plate 12 have excellent mechanical strength and durability against corrosive gases and their plasmas. The mounting plate 11 and the support plate 12 are made of the above-described Al 2 O 3 -SiC composite sintered body. That is, the mounting plate 11 and the support plate 12 correspond to the dielectric substrate 100 on which a corrosion-resistant film can be formed by the method for manufacturing a corrosion-resistant film of the first embodiment and the second embodiment.

[0079] On the mounting surface 11a of the mounting plate 11, a plurality of protrusions 11b having a diameter smaller than the thickness of the plate-like sample are formed at a plurality of predetermined intervals. These protrusions 11b support the plate-like sample W.

[0080] (Electrostatic adsorption electrode) The electrostatic adsorption electrode 13 is used to generate charges to generate an electrostatic adsorption force and fix the plate-like sample W. Its shape and size are appropriately adjusted according to its use.

[0081] The electrostatic adsorption electrode 13 is formed of a material arbitrarily selected from ceramics or metals having conductivity, which is a material that is less likely to deteriorate or be damaged under the usage conditions of the electrostatic chuck device manufactured by the manufacturing method of the present embodiment.

[0082] (Insulating material layer) The insulating material layer 14 surrounds the electrostatic adsorption electrode 13 and protects the electrostatic adsorption electrode 13 from corrosive gas and its plasma. Further, the insulating material layer 14 is a layer that joins and integrates the boundary portion between the mounting plate 11 and the support plate 12, that is, the outer peripheral region other than the electrostatic adsorption electrode 13, and is composed of an insulating material having the same composition or the same main component as the materials constituting the mounting plate 11 and the support plate 12.

[0083] (Temperature adjustment base portion) The temperature adjustment base portion 3 is a member for adjusting the electrostatic chuck member 2 to a desired temperature and is a thick disk-shaped member. The housing of the temperature adjustment base portion 3 also functions as an internal electrode for plasma generation. The housing of the temperature adjustment base member 3 is connected to an external high-frequency power source via a matcher (not shown). As this temperature adjustment base portion 3, for example, a liquid-cooled base in which a flow path 3A for circulating a refrigerant is formed inside is suitable.

[0084] An insulating plate 7 may be adhered to the upper surface side of the temperature adjustment base portion 3 via an adhesive layer 6. The temperature adjustment base portion 3 may be formed of metal, may be formed of conductive ceramics, or may be formed of a metal matrix composite (MMC).

[0085] The adhesive layer 6 is formed of an adhesive resin having heat resistance and insulation properties. Examples of such an adhesive material include sheet-like or film-like polyimide resin, silicone resin, epoxy resin, and the like.

[0086] The insulating plate 7 is manufactured using a material having insulation properties and being less likely or not to deteriorate or be damaged under the usage conditions of the electrostatic chuck device to be manufactured. The insulating plate 7 is made of, for example, a thin plate, sheet, or film of a heat-resistant resin such as polyimide resin, epoxy resin, or acrylic resin.

[0087] (Focus ring) The electrostatic chuck device main body 1 may have a focus ring 10. The focus ring 10 is a member in an annular shape in plan view that is placed on the peripheral edge of the temperature control base portion 3. The focus ring 10 can be formed of a material having the same electrical conductivity as the wafer placed on the placement surface, for example. By disposing such a focus ring 10, the electrical environment for the plasma at the peripheral edge of the wafer can be made substantially the same as that of the wafer, and it is possible to make it less likely for differences or biases in plasma processing to occur between the central portion and the peripheral edge of the wafer.

[0088] (Other members) A power supply terminal 15 for applying a DC voltage to the electrostatic adsorption electrode 13 is connected to the electrostatic adsorption electrode 13. The power supply terminal 15 is inserted into the inside of a through hole 16 that penetrates the temperature control base portion 3, the adhesive layer 8, and the support plate 12 in the thickness direction. An insulating insulator 15a may be provided on the outer peripheral side of the power supply terminal 15.

[0089] A heater element 5 may be provided on the lower surface side of the electrostatic chuck member 2. Note that the heater element 5 may be provided inside the electrostatic chuck member 2. The heater element 5 can be arbitrarily selected in terms of material and shape as long as it can heat the electrostatic chuck member 2. A power supply terminal 17 for supplying power to the heater element 5 is connected to the heater element 5. A cylindrical insulator 18 made of an insulating material may be provided between the power supply terminal 17 and the through hole 3b.

[0090] The heater element 5 is adhesively fixed to the bottom surface of the support plate 12 by an adhesive layer 4 made of a sheet-like or film-like silicon resin or acrylic resin having uniform heat resistance and insulation in thickness.

[0091] Also, a temperature sensor 20 may be provided on the lower surface side of the heater element 5. In the electrostatic chuck device main body 1, an installation hole 21 is formed so as to penetrate the temperature adjustment base portion 3 in the thickness direction. The temperature sensor 20 is installed at the uppermost part of the installation hole 21.

[0092] Furthermore, the electrostatic chuck device main body 1 may have a gas hole 28 provided so as to penetrate from the temperature adjustment base portion 3 to the mounting plate 11 in their thickness direction. A cylindrical insulator 29 may be provided on the inner peripheral portion of the gas hole 28.

[0093] A gas supply device (cooling means) is connected to the gas hole 28. A cooling gas (heat transfer gas) for cooling the plate-like sample W is supplied from the gas supply device through the gas hole 28. The cooling gas is supplied through the gas hole to a groove 19 formed between a plurality of protrusions 11b on the upper surface of the mounting plate 11 to cool the plate-like sample W.

[0094] Furthermore, the electrostatic chuck device main body 1 has a pin insertion hole (not shown) provided so as to penetrate from the temperature adjustment base portion 3 to the mounting plate 11 in their thickness direction. As the pin insertion hole, for example, the same configuration as the gas hole 28 can be adopted. A lift pin for separating the plate-like sample is inserted into the pin insertion hole. The electrostatic chuck device main body 1 has the above-described configuration.

[0095] (Step of forming a corrosion-resistant film) Next, by the above-described method for manufacturing a corrosion-resistant film, a corrosion-resistant film is formed on the surface of the electrostatic chuck member 2, specifically, on the surface of the mounting plate 11 or the support plate 12 made of an Al 2 O 3 -SiC composite sintered body (step of forming a corrosion-resistant film).

[0096] When forming the corrosion-resistant film by the method of the first embodiment, the dispersant used for the coating film and the method of forming the coating film are not particularly limited as long as they do not damage or alter the members of the electrostatic chuck device body 1 and do not affect the use. When forming the corrosion-resistant film by the method of the third embodiment, the temperature adjustment member 3 can be connected to the high-frequency power supply.

[0097] The corrosion-resistant film is preferably provided at a location exposed to plasma in the electrostatic chuck device. For example, the corrosion-resistant film is preferably provided on the surface and side surfaces of the electrostatic chuck device body 1, and is preferably provided on the surface and side surfaces of the electrostatic chuck member 2.

[0098] In addition, by using each of the above-described methods (sintering by laser light, AD method, magnetron sputtering method), the corrosion-resistant film can also be provided on other than the dielectric substrate 100. The corrosion-resistant film may be provided, for example, on the focus ring 10 exposed to plasma, the side surface of the temperature adjustment base portion 3, or the like.

[0099] The manufacturing methods of the corrosion-resistant films of the above-described first embodiment, second embodiment, and third embodiment can all form the corrosion-resistant film without exposing the dielectric substrate 100 to a heating environment. Therefore, even when forming the corrosion-resistant film on the electrostatic chuck device body 1, the corrosion-resistant film can be formed without exposing the electrostatic chuck device body 1 to a heating environment, and the corrosion resistance of the electrostatic chuck device body 1 can be improved without damaging the device configuration such as the wiring of the electrostatic chuck device body 1.

[0100] Also, in the manufacturing methods of the corrosion-resistant films of the above-described first embodiment and second embodiment, it is also possible to form the corrosion-resistant film at a desired position. Therefore, in the electrostatic chuck device, by selectively forming the corrosion-resistant film at a location that is likely to be worn out in the plasma process, it is possible to particularly improve the corrosion resistance of the location that is likely to be worn out in the plasma process.

[0101] Furthermore, for an electrostatic chuck device that has been worn out in the plasma process during use, by reforming a corrosion-resistant film at the worn-out location, it becomes easy to repair the worn-out location, and the device can be used over a long period of time.

[0102] According to the manufacturing method of the electrostatic chuck device with the above configuration, it becomes possible to improve the corrosion resistance of the electrostatic chuck device.

[0103] In this embodiment, after preparing the electrostatic chuck device main body 1, a corrosion-resistant film is formed on the electrostatic chuck member of the electrostatic chuck device main body 1, but it is not limited to this.

[0104] For example, Al 2 O 3 -SiC composite sintered body as a material, it may also be possible to manufacture an electrostatic chuck device provided with an electrostatic chuck member 2 having a corrosion-resistant film after forming a corrosion-resistant film on a part of the surface of the electrostatic chuck member 2.

[0105] Even with such a manufacturing method, in the electrostatic chuck device, a corrosion-resistant film can be selectively formed at locations that are likely to be worn out in the plasma process, and it becomes possible to particularly improve the corrosion resistance of locations that are likely to be worn out in the plasma process.

[0106] As described above, the preferred embodiments of the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to such examples. The various shapes, combinations, etc. of the constituent members shown in the above examples are merely examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

Example

[0107] Hereinafter, the present invention will be described by way of examples, but the present invention is not limited to these examples.

[0108] In this example, as a model experiment, it was confirmed that a corrosion-resistant film can be formed using the following test piece. Test piece: Dielectric substrate (Al 2O 3 : SiC = 95:5 (mass ratio), thickness 20 mm)

[0109] [Example 1] Yttrium oxyfluoride particles (YOF, specific surface area 4.7 m 2 / g), which are corrosion-resistant materials, were dispersed in a solvent for screen printing at 70% by mass using a three-roll mill to obtain a paste in which the particles of the corrosion-resistant material were dispersed.

[0110] The obtained paste was applied to a test piece by screen printing to form a coating film with a dry film thickness of 15 μm. The obtained coating film was irradiated with a 400 W laser and sintered to obtain the corrosion-resistant coating of Example 1.

[0111] [Example 2] Yttrium fluoride particles (YF 3 , specific surface area 8.2 m 2 / g), which are corrosion-resistant materials, were used, and the corrosion-resistant coating of Example 2 was obtained in the same manner as in Example 1 except that the content of the corrosion-resistant material in the paste was 60% by mass.

[0112] [Example 3] Spinel particles (MgAl 2 O 4 , specific surface area 2.9 m 2 / g), which are corrosion-resistant materials, were used, and the corrosion-resistant coating of Example 3 was obtained in the same manner as in Example 1 except that the content of the corrosion-resistant material in the paste was 54% by mass.

[0113] [Example 4] Yttrium oxyfluoride particles (YOF, specific surface area 1.9 m 2 / g), which are corrosion-resistant materials, were used to form the corrosion-resistant coating of Example 4 on a test piece by the aerosol deposition method. (Conditions of the aerosol deposition method) Gas (N 2 ) flow rate: 10 L / min Collision angle: 60° Substrate moving speed: 150 mm / min

[0114] According to Examples 1 to 4, Al 2 O 3 It was confirmed that a corrosion-resistant film can be formed on a dielectric substrate formed of SiC by screen printing and laser irradiation, or by the aerosol deposition method.

[0115] From the above investigations, it was confirmed that the present invention is useful.

Description of Reference Numerals

[0116] 1... Electrostatic chuck device body, 2... Electrostatic chuck member, 3... YF, 2O4... MgAl, 100... Dielectric substrate, 100a... Surface, 200... Corrosion-resistant film, 200x... Coating film, 210... Fine particles, 220... Aerosol, L... Laser beam

Claims

1. A step of applying a paste in which particles of a corrosion-resistant material are dispersed on the surface of a dielectric substrate to form a coating film of the corrosion-resistant material; A step of irradiating the coating film with laser light to form a corrosion-resistant film in which the corrosion-resistant material is sintered, and a method for manufacturing a corrosion-resistant film, wherein the corrosion-resistant material is at least one selected from the group consisting of YOF, YF ３ , MgF ２ , and MgAl ２ O ４ ; wherein the dielectric substrate is an aluminum oxide-silicon carbide composite sintered body.

2. The method for manufacturing a corrosion-resistant film according to claim 1, wherein in the step of forming the coating film, the coating film is formed on a part of the surface.

3. A step of forming a corrosion-resistant film on the surface of a dielectric substrate by an aerosol deposition method using fine particles of a corrosion-resistant material, wherein the corrosion-resistant material is at least one selected from the group consisting of YOF, YF ３ , MgF ２ , and MgAl ２ O ４ ; and a method for manufacturing a corrosion-resistant film, wherein the dielectric substrate is an aluminum oxide-silicon carbide composite sintered body.

4. The method for manufacturing a corrosion-resistant film according to claim 3, wherein the corrosion-resistant film is formed on a part of the surface.

5. A step of forming a corrosion-resistant film on the surface of a dielectric substrate by a high-frequency magnetron sputtering method using a corrosion-resistant material as a target material, wherein the corrosion-resistant material is at least one selected from the group consisting of YOF, YF ３ , MgF ２ , and MgAl ２ O ４ ; and a method for manufacturing a corrosion-resistant film, wherein the dielectric substrate is an aluminum oxide-silicon carbide composite sintered body.

6. The method for manufacturing a corrosion-resistant film according to claim 5, wherein the corrosion-resistant film is formed on a part of the surface.

7. A step of preparing an electrostatic chuck device body including an electrostatic chuck member made of an aluminum oxide-silicon carbide composite sintered body; and a step of forming a corrosion-resistant film on the surface of the electrostatic chuck member by the method for manufacturing a corrosion-resistant film according to any one of claims 1 to 6, and a method for manufacturing an electrostatic chuck device.

8. A step of forming a corrosion-resistant film on a part of the surface of an electrostatic chuck member made of an aluminum oxide-silicon carbide composite sintered body by the method for manufacturing a corrosion-resistant film according to any one of claims 2, 4, and 6; and a step of manufacturing an electrostatic chuck device including the electrostatic chuck member having the corrosion-resistant film, and a method for manufacturing an electrostatic chuck device.

9. A step of preparing an electrostatic chuck device body including an electrostatic chuck member made of an aluminum oxide-silicon carbide composite sintered body and a temperature adjusting member; a step of forming a corrosion-resistant film on the surface of the electrostatic chuck member by the method for manufacturing a corrosion-resistant film according to claim 5 or 6, wherein the temperature adjusting member is made of a conductive material as a forming material. A method for manufacturing an electrostatic chuck device that, in the step of forming the corrosion-resistant film, connects the temperature control member to a high-frequency power source and performs high-frequency magnetron sputtering method.

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