Air intake device, thin film deposition device, and thin film deposition method

Abstract

To provide an air intake device, a thin film deposition device, and a thin film deposition method for improving the problem of uneven thickness of the deposited film layer.SOLUTION: An air intake device includes an intake assembly 110 and a speed regulator assembly 120, the intake assembly is used to ventilate the reaction gas supplied from a gas supply device to a reaction chamber, and the speed regulator assembly is provided between the intake assembly and the gas supply device or at the exhaust end of the intake assembly, and is used to increase the speed of the reaction gas vented to the reaction chamber. By increasing the speed of the reaction gas vented to the reaction chamber, the point where the vector sum of its own speed on a wafer 400 and the intake speed of the reaction gas is zero can be eliminated, the stagnation layer of the reaction gas on the wafer can be uniformly distributed, and the uniformity of the thickness of the film layer formed by deposition can be further improved.SELECTED DRAWING: Figure 8

Description

Technical Field

[0001] This application belongs to the technical field of semiconductor manufacturing devices, and specifically relates to an intake device, a thin film deposition device, and a thin film deposition method.

Background Art

[0002] When a thin film deposition device deposits a thin film, a wafer is placed on a susceptor in a reaction chamber for deposition, and a reaction gas is introduced from one side in a first direction of the reaction chamber. The reaction gas that is not completely depleted is discharged from the other side in the first direction of the reaction chamber. The reaction gas forms a gas retention layer on the wafer. The smaller the thickness of the gas retention layer on the wafer, the smaller the thickness of the film layer formed by deposition. Since the thickness of the gas retention layer is non-uniform, the thickness of the film layer formed by deposition is also non-uniform.

[0003] Conventional thin film deposition devices introduce a compensation gas along a second direction of the reaction chamber perpendicular to the first direction of the reaction chamber. When measures are taken to introduce the compensation gas, the problem of non-uniformity of the film layer thickness can be improved to a certain extent. However, it becomes more difficult to maintain the process parameters of the reaction gas by introducing the compensation gas to increase the total reaction gas. At the same time, even if measures are taken to introduce the compensation gas, it can only compensate for the thickness of the film layer in the edge region of the wafer, and it is impossible to guarantee the uniformity of the thickness of the entire surface film layer.

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of this application is to provide, at least, an intake device, a thin film deposition device, and a thin film deposition method for improving the problem of non-uniformity of the thickness of the deposited film layer.

Means for Solving the Problems

[0005] To achieve the above object, this application provides an intake device. The intake device is connected to a gas supply device, and the intake device An intake assembly for venting the reaction gas supplied from the air supply device into the reaction chamber, and a speed control assembly provided between the intake assembly and the air supply device or at the exhaust end of the intake assembly for increasing the speed of the reaction gas vented into the reaction chamber.

[0006] Optionally, the speed control assembly includes a rectifying cover, the rectifying cover includes an air inlet and an air outlet, and the flow area of the air inlet of the rectifying cover is larger than the flow area of the air outlet of the rectifying cover.

[0007] Optionally, the rectifying cover is provided at the exhaust end of the intake assembly and is integrally connected to the intake assembly.

[0008] Optionally, a plurality of exhaust ports are provided at the exhaust end of the intake assembly, and a plurality of the rectifying covers are provided in one-to-one correspondence with the plurality of exhaust ports of the intake assembly, and the air inlet of the rectifying cover is connected to the exhaust port of the intake assembly.

[0009] Optionally, the speed control assembly includes paddles, and the paddles are provided between the air supply device and the intake assembly.

[0010] Optionally, the speed control assembly includes a pressure control valve, and the pressure control valve is provided between the air supply device and the intake assembly.

[0011] Optionally, the speed control assembly includes a pressure sensor, and the pressure sensor is provided in the duct between the pressure control valve and the air supply device or in the duct between the pressure control valve and the intake assembly.

[0012] Optionally, the speed control assembly includes at least two of a rectifying cover, paddles and a pressure control valve.

[0013] The rectifying cover includes an air inlet and an air outlet. The flow area of the air inlet of the rectifying cover is larger than that of the air outlet of the rectifying cover. The rectifying cover is provided at the exhaust end of the air intake assembly and is connected to the air outlet of the air intake assembly.

[0014] Both the paddle and the pressure control valve are provided between the air supply device and the air intake assembly.

[0015] Optionally, the speed regulating assembly includes at least a paddle and a pressure control valve. The air supply device, the pressure control valve, the paddle, and the air intake assembly are connected in sequence.

[0016] Optionally, the air intake device further includes a gas flow controller, and the gas flow controller is provided between the air supply device and the speed regulating assembly.

[0017] The present application further provides a thin film deposition apparatus including the air intake device.

[0018] The reaction chamber is connected to the air intake device.

[0019] The present application further provides a thin film deposition method, and the thin film deposition method includes: providing a thin film deposition apparatus, the thin film deposition apparatus including an air supply device, an air intake device, and a reaction chamber connected in sequence, placing a wafer on a susceptor in the reaction chamber, passing a reaction gas into the reaction chamber by the air intake device, and driving the susceptor to rotate the wafer; obtaining a base air intake speed of an air intake assembly of the air supply device, the base air intake speed having a positive correlation with the flow rate of the reaction gas supplied by the air supply device, and the base air intake speed having a negative correlation with the flow area of the air intake assembly; obtaining the rotational speed of the wafer rotation, and calculating the outer edge linear speed of the wafer based on the rotational speed of the wafer rotation and the radius of the wafer; Comparing the base intake velocity and the outer edge linear velocity, when the base intake velocity is smaller than the outer edge linear velocity, increasing the intake velocity of the reaction gas.

[0020] Optionally, the intake velocity of the reaction gas is equal to or greater than the outer edge linear velocity.

[0021] Optionally, the intake device includes paddles, the paddles are provided between the intake assembly and the air supply device, and the method for increasing the intake velocity of the reaction gas is including controlling the turning on of the paddles, or the intake device includes a pressure control valve, the pressure control valve is provided between the intake assembly and the air supply device, and the method for increasing the intake velocity of the reaction gas is including reducing the flow area of the reaction gas in the pressure control valve.

[0022] Optionally, the intake device includes the paddles and the pressure control valve, both the paddles and the pressure control valve are provided between the intake assembly and the air supply device, and the method for increasing the intake velocity of the reaction gas is reducing the flow area of the reaction gas in the pressure control valve, and when the pressure control valve fails or when the flow area of the reaction gas in the pressure control valve is reduced to the limit position, controlling the turning on of the paddles.

[0023] Optionally, the method for increasing the intake velocity of the reaction gas is a rectifying cover is attached to the intake end or the exhaust end of the intake assembly, the rectifying cover includes an intake port and an exhaust port, and the flow area of the intake port of the rectifying cover is larger than the flow area of the exhaust port of the rectifying cover.

[0024] Optionally, the method for increasing the intake velocity of the reaction gas is including reducing the pressure at the exhaust port of the reaction chamber.

[0025] Optionally, the method of increasing the intake rate of the reaction gas includes raising the temperature of the reaction gas in the intake device.

[0026] Optionally, the base intake rate of the intake assembly is calculated based on the air supply flow rate of the air supply device.

Advantages of the Invention

[0027] The intake device, thin film deposition device, and thin film deposition method disclosed in the present application have the following effects.

[0028] In the present application, the thin film deposition device includes an intake device. The intake device is connected to an air supply device. The intake device includes an intake assembly and a speed regulating assembly. The intake assembly is used to ventilate the reaction gas supplied from the air supply device into the reaction chamber. The speed regulating assembly is provided between the intake assembly and the air supply device or at the exhaust end of the intake assembly and is used to increase the speed of the reaction gas ventilated into the reaction chamber. By increasing the speed of the reaction gas ventilated into the reaction chamber, the point where the vector sum of the speed of the wafer itself and the intake rate of the reaction gas becomes zero is eliminated, the reaction gas retention layer on the wafer is uniformly distributed, and the problem of the thickness uniformity of the film layer formed by deposition can be further improved.

[0029] Other features and advantages of the present application will become apparent from the following detailed description or will be partially acquired by the implementation of the present application.

[0030] It should be understood that the above general description and the following detailed description are for illustrative and explanatory purposes only and do not limit the present disclosure.

Brief Description of the Drawings

[0031] The drawings herein are incorporated into the specification and form a part of the specification, conform to the embodiments of the present application, and are used to interpret the principles of the present application together with the specification. As is clear, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative effort.

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Embodiments for Carrying Out the Invention

[0032] Hereinafter, exemplary embodiments will be described in more detail with reference to the drawings. However, the exemplary embodiments can be implemented in various forms and should not be limited to the embodiments described herein. On the contrary, these embodiments are provided to make the present application more comprehensive and complete, and to comprehensively convey the concept of the exemplary embodiments to those skilled in the art.

[0033] Furthermore, the described features, structures, or characteristics can be combined in any suitable way in one or more embodiments. In the following description, many specific details are provided to give a complete understanding of the embodiments of the present application. However, those skilled in the art will come to realize that the technical means of the present application can be actually implemented without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, well-known methods, devices, realizations, or operations are not shown or described in detail to avoid obscuring aspects of the present application.

[0034] Hereinafter, the present application will be described in more detail with reference to the drawings and specific embodiments. It should be noted that the technical features of each embodiment of the present application described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the drawings are exemplary and are for the purpose of interpreting the present application and should not be understood as a limitation to the present application.

[0035] As shown in FIG. 1, when the thin film deposition apparatus deposits a thin film, the wafer 400 is placed on the susceptor in the reaction chamber for deposition. The gas supply device supplies the reaction gas at a preset flow rate, and the intake device 100 vents the reaction gas into the reaction chamber, and the reaction gas that has not been completely depleted is discharged from the exhaust port 301 of the reaction chamber. The reaction gas forms a gas retention layer on the wafer 400, and the smaller the thickness of the gas retention layer on the wafer 400, the smaller the thickness of the film layer formed by deposition. Since the thickness of the gas retention layer is non-uniform, the thickness of the film layer formed by deposition is also non-uniform. When the thin film deposition apparatus deposits a thin film, the susceptor drives the wafer 400 to rotate in the reaction chamber, whereby the uniformity of the thickness of the film layer formed by deposition can be improved.

[0036] As shown in FIGS. 1 and 2, when the wafer 400 rotates clockwise, the direction of the intake velocity vector of the reaction gas is opposite to the point velocity vector on the left radius of the wafer 400. The gas supply device supplies the reaction gas at a preset flow rate. Under the condition that the pipe diameter of the gas supply duct is constant, the intake velocity of the reaction gas has a positive correlation with the gas flow rate. In order to improve the uniformity of the thickness of the film layer formed by deposition, the wafer 400 needs to rotate within a preset range of rotation speeds.

[0037] The applicant has found that under the conditions of a preset flow rate and a preset rotation speed of the wafer 400, there is a reference point A on the left radius of the wafer 400, and the vector sum of its own velocity and the intake velocity of the reaction gas is 0. Note that due to the limitation of the reaction gas flow rate supplied by the gas supply device, the intake velocity of the reaction gas is smaller than the outer edge linear velocity of the wafer 400. At other points other than the left radius of the wafer 400, the velocity vector can be decomposed into two velocity vectors, namely, the velocity vector along the direction of the intake velocity of the reaction gas and the velocity vector along the direction perpendicular to the direction of the intake velocity of the reaction gas. Here, since the velocity vector in the direction perpendicular to the direction of the intake velocity of the reaction gas does not disappear due to superposition, no point where the vector sum of the velocity vectors becomes 0 appears except for the reference point A, and the position where this effect is most significantly affected is the vicinity of the left radius of the wafer 400.

[0038] When the vector sum of its own velocity and the intake velocity of the reaction gas at points on the wafer 400 where the distance from the center O of the circle of the wafer 400 is the same on the wafer 400 is superimposed, a profile of the relative velocity in the radial direction shown in FIG. 3 can be formed. As shown in FIG. 3, the closer to the edge region on the wafer 400, the larger the vector sum of its own velocity and the intake velocity of the reaction gas, the smaller the thickness of the gas stagnant layer, and the smaller the thickness of the film layer formed by deposition. The deposition process includes chemical vapor deposition (CVD, Chemical Vapor Deposition) and physical vapor deposition (PVD, Physical Vapor Deposition), and chemical vapor deposition includes epitaxial growth, where the epitaxial growth process is more significantly affected by the uniformity of the thickness of the gas stagnant layer.

[0039] As shown in FIGS. 4 and 9, in this embodiment, the intake device 100 is connected to the gas supply device 200. The intake device 100 includes an intake assembly 110 and a speed regulating assembly 120. The intake assembly 110 is used to vent the reaction gas supplied from the gas supply device 200 to the reaction chamber. The speed regulating assembly 120 is provided between the intake assembly 110 and the gas supply device 200 or at the exhaust end of the intake assembly 110, and is used to increase the speed of the reaction gas vented to the reaction chamber (i.e., the intake velocity of the reaction gas).

[0040] When the speed regulating assembly 120 is provided between the intake assembly 110 and the gas supply device 200, the intake assembly 110 is indirectly connected to the gas supply device 200 via the speed regulating assembly 120. When the speed regulating assembly 120 is provided at the exhaust end of the intake assembly 110, the intake assembly 110 can be directly or indirectly connected to the gas supply device 200.

[0041] The gas supply device 200 includes a gas manufacturing device for manufacturing the reaction gas or a storage device for storing the reaction gas. The reaction chamber includes an exhaust port, and the intake assembly 110 and the exhaust port 301 of the reaction chamber are provided on opposite sides of the reaction chamber.

[0042] As shown in FIG. 5, since the speed of the reaction gas can be increased by the speed control assembly 120, the vector sum of its own speed and the intake speed of the reaction gas at any point on the wafer 400 will not be zero. When the vector sums of its own speed and the intake speed of the reaction gas at points on the wafer 400 where the distance from the center O of the circle of the wafer 400 is the same are superimposed, a profile of the relative speed in the radial direction shown in FIG. 6 can be formed. As shown in FIG. 6, from the center O of the circle of the wafer 400 to the edge region of the wafer 400, the vector sums of its own speed and the intake speed of the reaction gas at different positions are equal, that is, the stagnant layer of the reaction gas on the wafer 400 is uniformly distributed.

[0043] In some technical solutions, the reaction gas is vented into the reaction chamber along the first direction, and the compensation gas is vented along the second direction of the reaction chamber perpendicular to the first direction. When measures are taken to vent the compensation gas, the problem of non-uniformity of the thickness of the deposited film layer can be improved to a certain extent, but it becomes more difficult to vent the compensation gas to increase the total reaction gas and maintain the process parameters of the reaction gas. At the same time, even if measures are taken to vent the compensation gas, only the thickness of the film layer in the edge region of the wafer 400 can be compensated, and the uniformity of the thickness of the entire film layer cannot be guaranteed.

[0044] In this embodiment, the intake device 100 is connected to the air supply device 200. The intake device 100 includes an intake assembly 110 and a speed regulating assembly 120. The intake assembly 110 is used to ventilate the reaction gas supplied from the air supply device 200 into the reaction chamber. The speed regulating assembly 120 is provided between the intake assembly 110 and the air supply device 200 or at the exhaust end of the intake assembly 110, and is used to increase the speed of the reaction gas ventilated into the reaction chamber. By increasing the speed of the reaction gas ventilated into the reaction chamber, the point where the vector sum of the self-speed of the wafer 400 and the intake speed of the reaction gas becomes zero is eliminated, the retention layer of the reaction gas on the wafer 400 is uniformly distributed, and the uniformity of the thickness of the film layer formed by deposition can be further improved.

[0045] Compared with the technical solution of ventilating the compensation gas and the technical solution of this embodiment, without changing the total amount of the reaction gas, the difficulty of maintaining the process parameters of the reaction gas is reduced. At the same time, by increasing the speed of the reaction gas ventilated into the reaction chamber, the retention layer of the reaction gas on the entire surface of the wafer 400 is uniformly distributed, and the uniformity of the thickness of the entire surface film layer is improved.

[0046] As shown in FIGS. 4 and 9, the speed regulating assembly 120 includes a rectifying cover 121. The rectifying cover 121 includes an air inlet and an air outlet. The flow area of the air inlet 1211 of the rectifying cover is larger than the flow area of the air outlet 1212 of the rectifying cover. The flow area of the reaction gas decreases and the speed of the reaction gas increases. At the same time, since the air supply flow rate by the air supply device 200 is constant, the flow rate of the reaction gas ventilated into the reaction chamber is constant. Preferably, the rectifying cover 121 may have a conical or quadrangular pyramid structure.

[0047] It should be noted that the rectifying cover 121 may have a conical or quadrangular pyramid structure, but is not limited thereto. The rectifying cover 121 may be a rectifying cover 121 with any other structure as long as the flow area of the air inlet 1211 of the rectifying cover is larger than the flow area of the air outlet 1212 of the rectifying cover.

[0048] The speed regulation assembly 120 includes a rectifying cover 121. The flow area of the air intake port 1211 of the rectifying cover is larger than the flow area of the air exhaust port 1212 of the rectifying cover. The rectifying cover 121 increases the speed of the reaction gas ventilated into the reaction chamber, has a simple structure, and is advantageous in terms of suppressing the manufacturing cost of the air intake device 100.

[0049] In some embodiments, the rectifying cover 121 is provided at the exhaust end of the air intake assembly 110 and is integrally connected to the air intake assembly 110. That is, the air intake assembly 110 and the rectifying cover 121 may be integrated or designed as one component.

[0050] It should be noted that the rectifying cover 121 may be integrally connected to the air intake assembly 110, but it is not limited thereto. In some cases, the rectifying cover 121 may be designed with a removable structure to facilitate the maintenance or replacement of rectifying covers 121 of different sizes.

[0051] The rectifying cover 121 is provided at the exhaust end of the air intake assembly 110 and is integrally connected to the air intake assembly 110, which can simplify the structure of the air intake device 100 and is advantageous in terms of suppressing the manufacturing cost of the air intake device 100.

[0052] In some embodiments, a plurality of exhaust ports are provided at the exhaust end of the air intake assembly 110. A plurality of rectifying covers 121 are provided in one-to-one correspondence with the plurality of exhaust ports of the air intake assembly 110, and the air intake port 1211 of the rectifying cover is connected to the exhaust port of the air intake assembly 110.

[0053] A plurality of exhaust ports are provided at the exhaust end of the intake assembly 110. The plurality of exhaust ports can intake air into the reactor and improve the uniformity of the intake air. By correspondingly providing a rectifying cover 121 at each exhaust port of the intake assembly 110, not only can the intake speed be improved, but also by designing different sizes of different rectifying covers 121, the distribution of the atmosphere of the reaction gas can be adjusted, and the uniformity of the intake air can be improved.

[0054] In some embodiments, as shown in FIGS. 7 and 9, the speed regulating assembly 120 includes a paddle 122, and the paddle 122 is provided between the air supply device 200 and the intake assembly 110. The rotation of the paddle 122 can do work on the reaction gas and increase the speed of the reaction gas. At the same time, since the air supply flow rate by the air supply device 200 is constant, the flow rate of the reaction gas vented into the reaction chamber is constant.

[0055] A paddle 122 is provided between the air supply device 200 and the intake assembly 110. By controlling the rotation speed of the paddle 122, the speed of the reaction gas can be controlled. Compared with increasing the speed of the reaction gas by the rectifying cover 121, the speed of the reaction gas can be increased in a wider range, and it can be easily realized to adjust the speed of the reaction gas without significantly increasing the manufacturing cost of the intake device 100.

[0056] In some embodiments, as shown in FIGS. 8 and 9, the speed regulating assembly 120 includes a pressure control valve 123, and the pressure control valve 123 is provided between the air supply device 200 and the intake assembly 110. By adjusting the flow area of the reaction gas in the pressure control valve 123, the air pressure at the tip of the intake assembly 110 can be adjusted, and thus the speed of the reaction gas can be adjusted.

[0057] A pressure control valve 123 is provided between the air supply device 200 and the intake assembly 110. By adjusting the air pressure at the tip of the intake assembly 110, the speed of the reaction gas can be adjusted. By using the rectifying cover 121, the speed of the reaction gas can be increased over a wider range rather than simply increasing it significantly, and the speed of the reaction gas can be adjusted easily without significantly increasing the manufacturing cost of the intake device 100.

[0058] In some embodiments, a pressure control valve 123 is provided between the air supply device 200 and the intake assembly 110. At the same time, the speed control assembly 120 includes a pressure sensor 124, and the pressure sensor 124 is provided in the duct between the pressure control valve 123 and the air supply device 200 or in the duct between the pressure control valve 123 and the intake assembly 110.

[0059] A pressure sensor 124 is provided between the intake assembly 110 and the air supply device 200. The pressure sensor 124 can monitor the air pressure at the tip of the intake assembly 110, and the pressure control valve 123 can adjust the air pressure at the tip of the intake assembly 110 based on the air pressure measured by the pressure sensor 124, thereby more accurately adjusting the speed of the reaction gas.

[0060] It should be understood that the pressure control valve 123 can adjust the air pressure at the tip of the intake assembly 110 based on the air pressure measured by the pressure sensor 124, but it is not limited thereto. In some cases, the pressure control valve 123 can adjust the speed of the reaction gas based on process parameters such as the intake flow rate.

[0061] In some embodiments, as shown in FIG. 9, the speed regulating assembly 120 includes at least two of a rectifying cover 121, a paddle 122, and a pressure control valve 123. Here, the rectifying cover 121 includes an air inlet and an air outlet. The flow area of the air inlet 1211 of the rectifying cover is larger than the flow area of the air outlet 1212 of the rectifying cover. The rectifying cover 121 is provided at the exhaust end of the intake assembly 110 and is connected to the exhaust port of the intake assembly 110. The paddle 122 and the pressure control valve 123 are both provided between the air supply device 200 and the intake assembly 110.

[0062] The speed of the reaction gas can be increased by any one of the rectifying cover 121, the paddle 122, and the pressure control valve 123. The speed regulating assembly 120 includes at least two of the rectifying cover 121, the paddle 122, and the pressure control valve 123. That is, the speed regulating assembly 120 performs a redundant design. By designing in this way, when any one of the speed regulating structures of the rectifying cover 121, the paddle 122, and the pressure control valve 123 fails, or when the speed cannot be adjusted to the set value, other speed regulating structures can replace the failed speed regulating structure or compensate for the failure to adjust to the set value, thereby improving the reliability of the intake device 100.

[0063] In some embodiments, the speed regulating assembly 120 includes at least the paddle 122 and the pressure control valve 123. The air supply device 200, the pressure control valve 123, the paddle 122, and the intake assembly 110 are connected in sequence. That is, when the speed regulating assembly 120 includes the paddle 122 and the pressure control valve 123, the pressure control valve 123 may be provided at the front end, and the paddle 122 may be provided at the rear end.

[0064] When the speed regulating assembly 120 includes the paddle 122 and the pressure control valve 123, the pressure control valve 123 is provided at the front end, and the paddle 122 is provided at the rear end. By designing in this way, the pressure control valve 123 can be prevented from affecting the working efficiency of the paddle 122.

[0065] In addition, when the speed control assembly 120 includes the paddle 122 and the pressure control valve 123, the pressure control valve 123 may be provided at the tip, and the paddle 122 may be provided at the rear end, but it is not limited thereto. In some cases, the pressure control valve 123 may be provided at the rear end, and the paddle 122 may be provided at the tip.

[0066] As shown in FIG. 9, the intake device 100 further includes a gas flow controller 130, and the gas flow controller 130 is provided between the air supply device 200 and the speed control assembly 120.

[0067] A gas flow controller 130 is provided between the air supply device 200 and the speed control assembly 120. Since the gas flow controller 130 can adjust the intake air flow rate of the intake device 100, when the speed control assembly 120 increases the speed of the reaction gas, it is ensured that the flow rate of the reaction gas vented into the reaction chamber is constant. Note that the gas flow controller 130 can adjust the intake air flow rate of the intake device 100, and the control method is simpler than adjusting the intake air flow rate by the air supply device 200.

[0068] In addition, the intake device 100 may include the gas flow controller 130, but it is not limited thereto. In some cases, the gas flow controller 130 may be integrated with the air supply device 200, or the gas flow controller 130 may be omitted, and the air supply device 200 may be used to control the intake air flow rate.

[0069] The present application further provides a thin film deposition apparatus, and the thin film deposition apparatus includes the intake device 100 disclosed above. The thin film deposition apparatus further includes necessary components such as an air supply device 200 and a reaction chamber. The intake device 100 connects the air supply device 200 and the reaction chamber, and vents the reaction gas produced or stored by the air supply device 200 into the reaction chamber. The thin film deposition apparatus may include a chemical vapor deposition apparatus and a physical vapor deposition apparatus, and the chemical vapor deposition apparatus includes an epitaxial growth apparatus.

[0070] In this embodiment, the thin film deposition apparatus includes an intake device 100. The intake device 100 includes an intake assembly 110 and a speed regulating assembly 120. The intake assembly 110 is used to vent the reaction gas supplied from the gas supply device 200 to the reaction chamber. The speed regulating assembly 120 is provided between the intake assembly 110 and the gas supply device 200 or at the exhaust end of the intake assembly 110, and is used to increase the speed of the reaction gas vented to the reaction chamber. By increasing the speed of the reaction gas vented to the reaction chamber, the point where the vector sum of its own speed and the intake speed of the reaction gas on the wafer 400 becomes zero is eliminated, the stagnant layer of the reaction gas on the wafer 400 is uniformly distributed, and furthermore, the thickness uniformity of the film layer formed by deposition can be improved.

[0071] As shown in FIGS. 1 and 10, the present application further provides a thin film deposition method, which includes the following steps.

[0072] In S100: Provide a thin film deposition apparatus, which includes a gas supply device 200, an intake device 100 and a reaction chamber connected in sequence. Place the wafer 400 on the susceptor of the reaction chamber, and vent the reaction gas to the reaction chamber by the intake device 100, and the susceptor drives the wafer 400 to rotate.

[0073] The intake device 100 includes an intake assembly 110, and the intake assembly 110 and the exhaust port 301 of the reaction chamber are located on opposite sides of the reaction chamber.

[0074] In S200: Obtain the base intake speed of the intake assembly 110 of the gas supply device 200. The base intake speed has a positive correlation with the flow rate of the reaction gas supplied from the gas supply device 200, and the base intake speed has a negative correlation with the flow area of the intake assembly 110.

[0075] It should be noted that under the condition that the pipe diameters of the intake assembly 110 and the duct connecting the intake assembly 110 and the gas supply device 200 are constant, the base intake speed is determined by the flow rate of the reaction gas supplied from the gas supply device 200.

[0076] In S300: Obtain the rotational speed of the wafer 400, and calculate the outer edge linear velocity of the wafer 400 based on the rotational speed of the wafer 400 and the radius of the wafer 400.

[0077] In S400: Compare the base intake velocity with the outer edge linear velocity. When the base intake velocity is smaller than the outer edge linear velocity, increase the intake velocity of the reaction gas.

[0078] By increasing the velocity of the reaction gas introduced into the reaction chamber, move the point where the vector sum of the self-velocity on the wafer 400 and the intake velocity of the reaction gas becomes 0 outward, or eliminate the point where the vector sum of the self-velocity on the wafer 400 and the intake velocity of the reaction gas becomes 0, uniformly distribute the stagnant layer of the reaction gas on the wafer 400, and further improve the thickness uniformity of the film layer formed by deposition.

[0079] In some embodiments, the base intake velocity of the intake assembly 110 is calculated based on the gas supply flow rate of the gas supply device 200.

[0080] Note that the base intake velocity of the intake assembly 110 is calculated based on the gas supply flow rate of the gas supply device 200, but it is not limited thereto. In some cases, the base intake velocity of the intake assembly 110 may be measured using a sensor.

[0081] Calculating the base intake velocity of the intake assembly 110 based on the gas supply flow rate of the gas supply device 200 and omitting the sensor for measuring the gas velocity is advantageous for reducing the manufacturing cost of the semiconductor device.

[0082] In some embodiments, the intake velocity of the reaction gas is equal to or greater than the outer edge linear velocity.

[0083] When the intake velocity of the reaction gas is equal to the outer edge linear velocity of the wafer 400, the points where the vector sum of its own velocity on the wafer 400 and the intake velocity of the reaction gas becomes 0 are exactly eliminated. Under this condition, the uniformity of the thickness of the film layer formed by deposition can be improved, and the deposition efficiency of the film layer can be guaranteed. Note that in order to eliminate errors, the intake velocity of the reaction gas may be slightly greater than the outer edge linear velocity of the wafer 400.

[0084] In some embodiments, the intake device 100 includes a paddle 122. The paddle 122 is provided between the air supply device 200 and the intake assembly 110. The method of increasing the intake velocity of the reaction gas includes controlling the turning on of the paddle 122. Alternatively, the intake device 100 includes a pressure control valve 123. The pressure control valve 123 is provided between the air supply device 200 and the intake assembly 110. The method of increasing the intake velocity of the reaction gas includes reducing the flow area of the reaction gas in the pressure control valve 123.

[0085] By controlling the turning on of the paddle 122, the rotation of the paddle 122 can do work on the reaction gas and increase the velocity of the reaction gas. By reducing the flow area of the reaction gas in the pressure control valve 123, the air pressure at the tip of the intake assembly 110 can be increased, and the velocity of the reaction gas can be increased. By increasing the velocity of the reaction gas vented into the reaction chamber, the points where the vector sum of its own velocity on the wafer 400 and the intake velocity of the reaction gas becomes 0 are eliminated, the retention layer of the reaction gas on the wafer 400 is uniformly distributed, and further, the uniformity of the thickness of the film layer formed by deposition can be improved.

[0086] In some embodiments, the intake device 100 includes a paddle 122 and a pressure control valve 123. Both the paddle 122 and the pressure control valve 123 are provided between the air supply device 200 and the intake assembly 110. The method of increasing the intake velocity of the reaction gas is When the flow area of the reaction gas in the pressure control valve 123 is reduced, or when the pressure control valve 123 fails, or when the flow area of the reaction gas in the pressure control valve 123 is reduced to the limit position, it includes controlling the turning on of the paddle 122.

[0087] By preferentially adopting the pressure control valve 123 to increase the intake speed of the reaction gas, the pressure of the boundary conditions can be made constant, and it is easier and more accurate to control the intake speed of the reaction gas.

[0088] In addition, by preferentially adopting the pressure control valve 123 to increase the intake speed of the reaction gas, and using the paddle 122 as a backup for the pressure control valve 123, when the pressure control valve 123 fails or reaches the control limit, the paddle 122 can be turned on again. However, it is not limited to this. In some cases, while controlling the turning on of the paddle 122, the flow area of the reaction gas in the pressure control valve 123 can be reduced.

[0089] In some embodiments, the method of increasing the intake speed of the reaction gas is A rectifying cover 121 is attached to the intake end or the exhaust end of the intake assembly 110. The rectifying cover 121 includes an intake port and an exhaust port, and the flow area of the intake port 1211 of the rectifying cover is larger than the flow area of the exhaust port 1212 of the rectifying cover.

[0090] By reducing the flow area of the reaction gas, the intake speed of the reaction gas can be increased. By increasing the speed of the reaction gas vented to the reaction chamber, the point where the vector sum of the self-speed on the wafer 400 and the intake speed of the reaction gas becomes 0 is eliminated, the stagnant layer of the reaction gas on the wafer 400 is uniformly distributed, and furthermore, the thickness uniformity of the film layer formed by deposition can be improved.

[0091] In some embodiments, the method of increasing the intake speed of the reaction gas is It includes reducing the pressure at the exhaust port 301 of the reaction chamber.

[0092] The intake assembly 110 and the exhaust port 301 of the reaction chamber are located on opposite sides of the reaction chamber. The pressure in the intake assembly 110 is greater than the pressure at the exhaust port 301 of the reaction chamber, and the reaction gas flows from the intake assembly 110 toward the exhaust port 301 of the reaction chamber. By appropriately reducing the pressure at the exhaust port 301 of the reaction chamber, the pressure difference between the intake assembly 110 and the exhaust port 301 of the reaction chamber can be increased, which has the effect of increasing the intake speed of the reaction gas. In addition, while reducing the pressure at the exhaust port 301 of the reaction chamber, the intake flow rate of the air supply device 200 can be further appropriately increased.

[0093] In addition, an increase value of the intake flow rate of the air supply device 200 and a decrease value of the pressure at the exhaust port 301 of the reaction chamber form a correspondence relationship. The correspondence relationship between the increase value of the intake flow rate of the air supply device 200 and the decrease value of the pressure at the exhaust port 301 of the reaction chamber is calculated by practical application or simulation. By synchronously adjusting the intake flow rate of the air supply device 200 and the pressure at the exhaust port 301 of the reaction chamber based on the correspondence relationship, it is possible to prevent a change in the thickness of the deposited film layer due to a decrease in the pressure at the exhaust port 301 of the reaction chamber.

[0094] In some embodiments, the method for increasing the intake speed of the reaction gas includes raising the temperature of the reaction gas in the intake device 100.

[0095] By raising the temperature of the reaction gas in the intake device 100, the pressure of the reaction gas in the intake device 100 can be increased. The intake assembly 110 and the exhaust port 301 of the reaction chamber are located on opposite sides of the reaction chamber. The pressure in the intake assembly 110 is greater than the pressure at the exhaust port 301 of the reaction chamber, and the reaction gas flows from the intake assembly 110 toward the exhaust port 301 of the reaction chamber. By increasing the pressure of the reaction gas in the intake device 100, the pressure difference between the intake assembly 110 and the exhaust port 301 of the reaction chamber can be increased, which has the effect of increasing the intake speed of the reaction gas.

[0096] The terms "first", "second", etc. are for illustrative purposes only and should not be construed as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, features such as "first", "second", etc. can explicitly or implicitly include one or more of the said features. In the description of the present application, "a plurality" means two or more unless otherwise specified.

[0097] In the present application, unless otherwise specified, terms such as "assembly", "connection", etc. should be understood in a broad sense. For example, it may be a fixed connection, a removable connection, or an integral one, and may be mechanically connected, electrically connected, directly connected, or indirectly connected through an intermediate medium, or may be an internal communication between two elements or an interaction relationship between two elements. A person skilled in the art can understand the specific meaning of the above terms in the present application based on the specific situation.

[0098] In the description of this specification, the description referring to terms such as "some embodiments", "exemplary", etc. means that the specific features, structures, materials or features described in the said embodiments or exemplified are included in at least one embodiment or example of the present application. In this specification, the schematic expressions for the above terms are not necessarily the same embodiment or example. Also, the described specific features, structures, materials or features may be combined in a suitable manner in any one or more embodiments or examples. Also, as long as there is no contradiction, a person skilled in the art can combine and combine different embodiments or examples and the features of different embodiments or examples described in this specification.

[0099] The embodiments of the present application have been shown and described above. Also, the above embodiments are exemplary and should not be construed as limitations to the present application. A person skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present application. However, any changes or modifications according to the claims and the specification of the present application belong to the scope of the claims of the present application.

Description of Reference Numerals

[0100] 100, Intake device, 110, Intake assembly, 120, Governor assembly, 121, Rectifying cover, 1211, Intake port of the rectifying cover, 1212, Exhaust port of the rectifying cover, 122, Paddle, 123, Pressure control valve, 124, Pressure sensor, 130, Gas flow controller, 200, Air supply device, 301, Exhaust port of the reaction chamber, 400, Wafer.

Claims

1. An intake system connected to an air supply system, comprising: an intake assembly for venting the reaction gas supplied from the gas supply device into a reaction chamber; a speed adjusting assembly provided between the intake assembly and the air supply device or at the exhaust end of the intake assembly for increasing the speed of the reaction gas vented into the reaction chamber. An intake device characterized by:

2. The speed control assembly includes a straightening cover, the straightening cover includes an intake port and an exhaust port, and a flow area of ​​the intake port of the straightening cover is larger than a flow area of ​​the exhaust port of the straightening cover.

2. The intake system according to claim 1.

3. The flow straightening cover is provided at the exhaust end of the intake assembly and is integrally connected to the intake assembly.

3. The intake system according to claim 2.

4. A plurality of exhaust ports are provided at the exhaust end of the intake assembly, and the plurality of flow straightening covers are provided in one-to-one correspondence with the plurality of exhaust ports of the intake assembly, and the intake ports of the flow straightening covers are connected to the exhaust ports of the intake assembly.

3. The intake system according to claim 2.

5. The governor assembly includes a paddle, the paddle being disposed between the air charge system and the air intake assembly.

2. The intake system according to claim 1.

6. The speed control assembly includes a pressure control valve, the pressure control valve being disposed between the air charge system and the intake assembly.

2. The intake system according to claim 1.

7. The speed control assembly includes a pressure sensor, the pressure sensor being provided in a duct between the pressure control valve and the air charge system or in a duct between the pressure control valve and the air intake assembly.

7. The intake system according to claim 6.

8. The speed control assembly includes at least two of a flow control cover, a paddle, and a pressure control valve; the straightening cover includes an intake port and an exhaust port, a flow area of ​​the intake port of the straightening cover is larger than a flow area of ​​the exhaust port of the straightening cover, the straightening cover is provided at an exhaust end of the intake assembly and is connected to the exhaust port of the intake assembly, The paddle and the pressure control valve are both disposed between the air charge system and the intake assembly.

2. The intake system according to claim 1.

9. The speed control assembly includes at least a paddle and a pressure control valve, and the air intake system, the pressure control valve, the paddle and the air intake assembly are connected in series.

9. The intake system according to claim 8.

10. The intake system further includes a gas flow controller, the gas flow controller being disposed between the intake system and the speed governor assembly.

10. An intake system according to claim 1, wherein the intake member is a cylinder.

11. The intake device according to any one of claims 1 to 9, The reaction chamber is connected to the intake device. A thin film deposition apparatus comprising:

12. A thin film deposition apparatus is provided, the thin film deposition apparatus including an air supply device, an air intake device, and a reaction chamber connected in sequence, a wafer is placed on a susceptor of the reaction chamber, a reaction gas is supplied to the reaction chamber by the air intake device, and the wafer is driven to rotate by the susceptor; acquiring a base intake speed of an intake assembly of the intake system, the base intake speed being positively correlated with a flow rate of reactant gas supplied from the intake system, and the base intake speed being negatively correlated with a flow area of ​​the intake assembly; acquiring a rotation speed of the wafer, and calculating an outer edge linear velocity of the wafer based on the rotation speed of the wafer and a radius of the wafer; comparing the base intake velocity with the peripheral linear velocity, and increasing the intake velocity of the reactant gas when the base intake velocity is smaller than the peripheral linear velocity. A thin film deposition method comprising the steps of:

13. The intake velocity of the reaction gas is equal to or greater than the peripheral linear velocity.

13. The method of claim 12.

14. The intake system includes a paddle, the paddle being disposed between the intake assembly and the air charge system, and the method for increasing the intake velocity of the reactant gas includes: controlling the on-off of the paddle; or The intake system includes a pressure control valve, the pressure control valve being disposed between the intake assembly and the air supply system, and the method for increasing the intake velocity of the reactant gas comprises: Reducing the flow area of ​​the reaction gas in the pressure control valve.

14. The method of claim 13,

15. The intake system includes the paddle and the pressure control valve, both of which are disposed between the intake assembly and the air supply system, and the method for increasing the intake velocity of the reactant gas includes: The flow area of ​​the reaction gas in the pressure control valve is reduced, and when the pressure control valve breaks down or when the flow area of ​​the reaction gas in the pressure control valve is reduced to a limit position, the paddle is controlled to be turned on.

15. The method of claim 14.

16. The method for increasing the intake velocity of the reaction gas includes: A straightening cover is attached to the intake end or the exhaust end of the intake assembly, the straightening cover includes an intake port and an exhaust port, and a flow area of ​​the intake port of the straightening cover is larger than a flow area of ​​the exhaust port of the straightening cover.

13. The method of claim 12.

17. The method for increasing the intake velocity of the reaction gas includes: reducing the pressure at the exhaust port of the reaction chamber.

13. The method of claim 12.

18. The method for increasing the intake velocity of the reaction gas includes: increasing the temperature of reactant gases in the intake system.

13. The method of claim 12.

19. The base intake speed of the intake assembly is calculated based on the intake air flow rate of the intake system.

13. The method of claim 12.

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