Injector and processing apparatus

Abstract

To provide a technology with which the inter-plane uniformity of gas supply to substrates can be adjusted.SOLUTION: A processing apparatus includes: a processing container having substantially cylindrical shape; a first injector extending in a longitudinal direction along the inside of an inner wall of the processing container and including a first introduction port formed at a lower end and first gas holes formed in the extending portion; and a second injector extending upward along the inside of the inner wall of the processing container, and then extending downward after being folded back at an upper portion, the second injector including a second introduction port formed at a lower end of an upward extending portion and second gas holes formed in a downward extending portion. The first injector includes a first throttle portion having a cross-sectional area decreasing as a distance from the first introduction port increases. The second injector includes a second throttle portion formed in the downward extending portion and having a cross-sectional area decreasing as a distance from the second introduction port increases.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a processing apparatus and a processing method.

Background Art

[0002] There is known a substrate processing apparatus including a processing container that houses a boat on which a substrate is mounted, and an injector that extends vertically along the inner wall of the processing container in the vicinity of the processing container and has a plurality of gas holes in the longitudinal direction (see, for example, Patent Documents 1 and 2). Patent Document 1 discloses a gas injector whose pipe diameter decreases as it moves away from the gas supply port. Patent Document 2 discloses an apparatus provided with a first gas introduction pipe composed of a straight pipe and a second gas introduction pipe composed of a U-shaped pipe.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of adjusting the surface uniformity of the gas supply to the substrate.

Means for Solving the Problems

[0005] A processing apparatus according to one aspect of the present disclosure includes a processing container having a substantially cylindrical shape, a first injector extending longitudinally along the inner side of the inner wall of the processing container, a first introduction port formed at a lower end thereof, and a plurality of first gas holes formed in the extending portion. A first injector; a second injector that extends upward along the inner side of the inner wall of the processing container, is folded back at an upper portion, and then extends downward, and a second introduction port formed at a lower end of the upward extending portion And a second injector having a plurality of second gas holes formed in the downward extending portion, wherein the first injector includes a first throttle portion whose cross-sectional area decreases as it moves away from the first introduction port, and the second injector is formed in the downward extending portion and includes a second throttle portion whose cross-sectional area decreases as it moves away from the second introduction port.

Advantages of the Invention

[0006] According to the present disclosure, the surface uniformity of the gas supply to the substrate can be adjusted.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Embodiments for Carrying Out the Invention

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding members or parts are denoted by the same or corresponding reference numerals, and duplicate descriptions are omitted.

[0009] 〔Processing Apparatus〕 Referring to FIG. 1, an example of the processing apparatus of the embodiment will be described. The processing apparatus of the embodiment is a batch-type vertical processing apparatus capable of simultaneously forming films on a plurality of substrates at once. The processing apparatus of the embodiment is an apparatus for depositing a film on a substrate by, for example, chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0010] The processing apparatus 10 has a processing container 34 for accommodating the substrate W and a lid 36 for closing the opening at the lower end on the Z2 side of the processing container 34. The substrate W is a semiconductor wafer such as a silicon wafer, for example. Further, the processing apparatus 10 has a boat 38 that can be accommodated in the processing container 34 and holds a plurality of substrates W at a predetermined interval, a gas supply unit 40 for supplying gas into the processing container 34, and an exhaust unit 41 for exhausting the gas in the processing container 34. A heating unit 42 for heating the inside of the processing container 34 is provided outside the processing container 34.

[0011] The processing container 34 has a substantially cylindrical inner tube 44 with its lower end on the Z2 side open and having a ceiling portion 44A on the Z1 side, and a substantially cylindrical outer tube 46 with its lower end on the Z2 side open and having a ceiling on the Z1 side covering the outside of the inner tube 44. The inner tube 44 and the outer tube 46 are formed of a heat-resistant material such as quartz, and are coaxially arranged along the Z1-Z2 direction to form a double-tube structure.

[0012] The ceiling portion 44A of the inner tube 44 is, for example, flat. Inside the inner tube 44, a nozzle accommodating portion 48 for accommodating injectors 76 and 77 described later is formed along the Z1-Z2 direction. A convex portion 50 that protrudes outward in the X1 direction is formed in a part of the side wall of the inner tube 44, and the inside of the formed convex portion 50 may be used as the nozzle accommodating portion 48. A rectangular opening 52 having a predetermined width is formed along the Z1-Z2 direction in the side wall on the X2 side, which is the opposite side of the inner tube 44 facing the nozzle accommodating portion 48.

[0013] The opening 52 is an exhaust port for exhausting the inside of the inner tube 44. The length of the opening 52 in the Z1-Z2 direction is the same as the length of the boat 38 or is formed longer than the length of the boat 38. That is, at the upper end on the Z1 side of the opening 52, it is formed longer on the Z1 side than the position corresponding to the upper end of the boat 38, and at the lower end on the Z2 side of the opening 52, it is formed longer on the Z2 side than the position corresponding to the lower end of the boat 38.

[0014] The lower end on the Z2 side of the processing container 34 is supported by a substantially cylindrical manifold 54 formed of, for example, stainless steel. A flange portion 56 is formed at the upper end on the Z1 side of the manifold 54, and the lower end on the Z2 side of the outer tube 46 is connected on the flange portion 56. A seal member 58 such as an O-ring is provided between the flange portion 56 and the outer tube 46, and the flange portion 56 and the outer tube 46 are connected via the seal member 58. In the present embodiment, the region surrounded by the processing container 34, the manifold 54, and the lid body 36 inside the processing container 34 may be described as the inside of the processing container.

[0015] On the inner wall on the Z1 side, which is the upper part of the manifold 54, an annular support portion 60 is provided. The lower end on the Z2 side of the inner pipe 44 is installed on the support portion 60 and is supported thereby. A lid body 36 is attached to the opening at the lower end on the Z2 side of the manifold 54 via a sealing member 62 such as an O-ring, sealing and closing the opening at the lower end on the Z2 side of the processing container 34, that is, the opening of the manifold 54. The lid body 36 is formed of, for example, stainless steel.

[0016] A rotary shaft 66 penetrates through the central portion of the lid body 36 via a magnetic fluid seal portion 64. The lower part on the Z2 side of the rotary shaft 66 is rotatably supported by an arm 68A of a lifting portion 68 formed of a boat elevator.

[0017] A rotary plate 70 is provided at the upper end on the Z1 side of the rotary shaft 66, and a boat 38 for holding a substrate W is placed on the rotary plate 70 via a heat-insulating table 72 made of quartz. Therefore, by raising and lowering the arm 68A by the lifting portion 68, the lid body 36 and the boat 38 move up and down integrally, and the boat 38 can be put into or taken out of the processing container 34.

[0018] The gas supply unit 40 is provided in the manifold 54 and can supply a processing gas into the inner pipe 44. The processing gas includes, for example, a source gas and an additive gas. The source gas is a gas for depositing a film on the substrate W and may be, for example, a silicon-containing gas such as monosilane (SiH4) or disilane (Si2H6). The additive gas is a gas for diluting the source gas and may be, for example, an inert gas such as nitrogen (N2) or argon (Ar). The gas supply unit 40 has two quartz injectors 76 and 77. However, the gas supply unit 40 may further have another injector. The injectors 76 and 77 each have a plurality of gas holes 76a and 77a for discharging the processing gas. Details of the injectors 76 and 77 will be described later.

[0019] On the outer peripheral side of the outer tube 46, a substantially cylindrical heating portion 42 is provided so as to surround the outer tube 46. The heating portion 42 can heat the substrate W accommodated in the processing container 34 and the gas in the injectors 76 and 77.

[0020] A processing gas supply source GS is connected to the injector 76 via a valve V1, a flow controller M1, and a valve V2. A processing gas supply source GS is connected to the injector 77 via a valve V3, a flow controller M2, and a valve V4. That is, the injectors 76 and 77 are connected to the same processing gas supply source GS. However, the injectors 76 and 77 may be connected to different processing gas supply sources.

[0021] In the injector 76, the processing gas from the processing gas supply source GS is introduced into the injector 76 via the valves V1 and V2 under the control of the flow controller M1, and is discharged into the inner tube 44 of the processing container 34 through a plurality of gas holes 76a. In the injector 77, the processing gas from the processing gas supply source GS is introduced into the injector 77 via the valves V3 and V4 under the control of the flow controller M2, and is discharged into the inner tube 44 of the processing container 34 through a plurality of gas holes 77a.

[0022] An exhaust port 82 is provided in the side wall on the Z1 side, which is the upper part of the manifold 54, above the support portion 60. The gas in the inner tube 44 is exhausted from the opening 52 through the space portion 84 between the inner tube 44 and the outer tube 46. An exhaust portion 41 is connected to the exhaust port 82. The exhaust portion 41 is provided with a pressure regulating valve 88, an exhaust passage 86, and a vacuum pump 90 in this order from the exhaust port 82, and the inside of the processing container 34 can be evacuated.

[0023] In this embodiment, a plurality of substrates W are installed inside the inner tube 44 along the Z1-Z2 direction perpendicular to the wafer surface that becomes the substrate surface. The processing gas is discharged between the substrates W from a plurality of gas holes 76a and 77a formed in the injectors 76 and 77. The discharged processing gas passes between the substrates W and the substrates W are processed. The gas that does not contribute to the processing exits the outside of the inner tube 44 through the opening 52 on the X2 side, passes through the space 84 between the inner tube 44 and the outer tube 46, and is exhausted from the exhaust port 82.

[0024] The overall operation of the processing apparatus 10 is controlled by a control unit 95 such as a computer, for example. Also, the program of the computer that performs the overall operation of the processing apparatus 10 may be stored in a storage medium 96. The storage medium 96 may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0025] 〔Injector〕 Referring to FIGS. 2 to 4 in addition to FIG. 1, an example of the injector 76 provided in the processing apparatus 10 of FIG. 1 will be described. FIG. 2 is a schematic view when the injectors 76 and 77 are viewed from the center side in the radial direction of the processing container 34. FIGS. 3 and 4 are schematic views when the injector 76 is viewed from the circumferential direction of the processing container 34.

[0026] The injector 76 is an upright dispersion injector that extends longitudinally along the inside of the inner wall of the processing container 34, and a plurality of gas holes 76a are formed at predetermined intervals along the longitudinal direction in the extending portion. The injector 76 forms an introduction port 76b with an open lower portion through which the processing gas is introduced, and the upper portion is closed.

[0027] The injector 76 includes a throttle portion 76c whose cross-sectional area decreases as it moves away from the introduction port 76b. Thereby, it is possible to suppress a decrease in the flow velocity on the downstream side of the gas flow, and thus the uniformity of the mass flow rate of the processing gas in the vertical direction is improved. The throttle portion 76c has a frustum shape. However, the shape of the throttle portion 76c is not limited to this, and may be, for example, a conical shape, a polygonal pyramid shape, or a polygonal frustum shape.

[0028] The plurality of gas holes 76a are formed in the throttle portion 76c. However, a part of the plurality of gas holes 76a may be formed at positions other than the throttle portion 76c. The plurality of gas holes 76a are oriented toward the center side of the processing container 34. Thereby, the plurality of gas holes 76a discharge the processing gas introduced from the introduction port 76b in a substantially horizontal direction toward the center of the processing container 34. However, the plurality of gas holes 76a may be oriented in a direction different from the center side of the processing container 34, for example, toward the inner wall side of the processing container 34.

[0029] The plurality of gas holes 76a are arranged at predetermined intervals along the vertical direction. The predetermined interval is, for example, the same as the interval between the substrates W supported by the boat 38. Also, the position of each gas hole 76a in the Z1-Z2 direction is located in the middle between adjacent substrates W in the Z1-Z2 direction, and the processing gas can be efficiently supplied to the space portion between the substrates W. However, the predetermined interval of each gas hole 76a is not limited to the above. It may be provided for each of the plurality of substrates W. Also, the position of each gas hole 76a is not limited to the middle position between adjacent substrates W, and may be provided at an arbitrary position such as the same height as the substrate W.

[0030] As shown in FIG. 3, the injector 76 is arranged such that the tube axis 76d is inclined by an angle θ1 toward the center side of the processing container 34 with respect to the vertical axis VA, so that the surface 76e on which the plurality of gas holes 76a are formed in the throttle portion 76c is parallel to the vertical direction. Thereby, for all the substrates W, the distance L1 between the substrate W and the surface 76e on which the plurality of gas holes 76a are formed in the throttle portion 76c becomes equal. However, as shown in FIG. 4, the injector 76 may be arranged such that the tube axis 76d is parallel to the vertical axis VA, and the surface 76e on which the plurality of gas holes 76a are formed in the throttle portion 76c is arranged at an angle with respect to the vertical axis VA. In the example of FIG. 4, the distance L1 between the substrate W and the surface 76e on which the plurality of gas holes 76a are formed in the throttle portion 76c is longer at the upper part than at the lower part.

[0031] Next, with reference to FIGS. 5 and 6 in addition to FIGS. 1 and 2, an example of the injector 77 provided in the processing device 10 of FIG. 1 will be described. FIGS. 5 and 6 are schematic views when the injector 77 is viewed from the circumferential direction of the processing container 34.

[0032] The injector 77 is a folded dispersion injector that extends upward along the inner side of the inner wall of the processing container 34, is folded back at the upper part, and then extends downward, and a plurality of gas holes 77a are formed at predetermined intervals along the longitudinal direction in the downward extending portion. The injector 77 is provided at a position adjacent to the injector 76 in the circumferential direction of the processing container 34. However, the injector 77 may be provided at a position adjacent to the injector 76 in the radial direction of the processing container 34.

[0033] The lower part of the upward extending portion of the injector 77 is open to form an introduction port 77b into which the processing gas is introduced, and the lower part of the downward extending portion is closed.

[0034] The downward extending portion of the injector 77 includes a throttle portion 77c whose cross-sectional area decreases as it moves away from the introduction port 77b. Thereby, it is possible to suppress a decrease in the flow velocity on the downstream side of the gas flow, and thus the uniformity of the mass flow rate of the processing gas in the vertical direction is improved. The throttle portion 77c has a frustum shape. However, the shape of the throttle portion 77c is not limited to this, and for example, it may be a conical shape, a polygonal pyramid shape, or a polygonal frustum shape.

[0035] The plurality of gas holes 77a are formed in the throttle portion 77c. However, a part of the plurality of gas holes 77a may be formed at positions other than the throttle portion 77c. The plurality of gas holes 77a are oriented toward the center side of the processing container 34. Thereby, the plurality of gas holes 77a discharge the processing gas introduced from the introduction port 77b toward the center of the processing container 34 in a substantially horizontal direction. However, the plurality of gas holes 77a may be oriented in a direction different from the center side of the processing container 34, for example, toward the inner wall side of the processing container 34.

[0036] The plurality of gas holes 77a are arranged at predetermined intervals along the vertical direction. The predetermined interval is, for example, the same as the interval between substrates W supported by the boat 38. Also, the position of each gas hole 77a in the Z1-Z2 direction is located in the middle between adjacent substrates W in the Z1-Z2 direction, and the processing gas can be efficiently supplied to the space between the substrates W. However, the predetermined interval of each gas hole 77a is not limited to the above. It may be provided for each of the plurality of substrates W. Also, the position of each gas hole 77a is not limited to the middle position between adjacent substrates W, and it may be provided at an arbitrary position such as the same height as the substrate W.

[0037] As shown in FIG. 2, the plurality of gas holes 77a are arranged at the same height position as the plurality of gas holes 76a. However, the plurality of gas holes 77a may be arranged at a height position different from that of the plurality of gas holes 76a.

[0038] As shown in FIG. 5, the injector 77 is arranged such that the tube axis 77d is inclined by an angle θ2 toward the inner wall side of the processing vessel 34 with respect to the vertical axis VA, so that the surface 77e on which the plurality of gas holes 77a are formed in the throttle portion 77c is parallel to the vertical axis VA. Thereby, the distance L2 between all the substrates W and the surface 77e on which the plurality of gas holes 77a are formed in the throttle portion 77c becomes equal. However, as shown in FIG. 6, the injector 77 may be arranged such that the tube axis 77d is parallel to the vertical axis VA, and the surface 77e on which the plurality of gas holes 77a are formed in the throttle portion 77c is arranged at an angle with respect to the vertical axis VA. In the example of FIG. 6, the distance L2 between the substrate W and the surface 77e on which the plurality of gas holes 77a are formed in the throttle portion 77c is longer at the lower part than at the upper part.

[0039] Further, as shown in FIG. 2, the injector 77 has the same cross-sectional area of the upwardly extending portion as the upper cross-sectional area of the downwardly extending portion. However, as shown in FIG. 7, the injector 77 preferably has a smaller cross-sectional area of the upwardly extending portion than the upper cross-sectional area of the downwardly extending portion. As a result, the flow velocity of the processing gas introduced into the injector 77 from the introduction port 77b until it reaches the throttle portion 77c increases, and the residence time until it reaches the throttle portion 76c becomes shorter. Therefore, the residence time of the processing gas introduced into the injector 77 from the introduction port 77b until it reaches the throttle portion 77c can be made close to the residence time of the processing gas introduced into the injector 76 from the introduction port 76b until it reaches the throttle portion 76c. As a result, the thermal decomposition rate of the processing gas in the injector 77 can be made comparable to the thermal decomposition rate of the processing gas in the injector 76.

[0040] Further, as shown in FIG. 2, the injector 77 is arranged such that the upper end of the upper portion folded back from above to below is at the same height as the upper end of the injector 76. However, the injector 77 may be arranged such that the upper end of the upper portion folded back from above to below is at a different height from the upper end of the injector 76, for example, at a height above the upper end of the injector 76 as shown in FIG. 8.

[0041] By the way, when the silicon-containing gas, which is the source gas, is introduced into the injector, it is heated by the heating unit while flowing from the upstream to the downstream in the injector. Therefore, the silicon-containing gas discharged from the gas hole located upstream of the gas flow and the silicon-containing gas discharged from the gas hole located downstream have different heating times in the injector. As a result, there are differences in the flow rate and the thermal decomposition rate between the silicon-containing gas discharged from the gas hole located upstream and the silicon-containing gas discharged from the gas hole located downstream, and variations occur in the uniformity of the film characteristics between the substrates W of the silicon film to be formed.

[0042] The processing apparatus 10 of the embodiment includes a vertical dispersion injector (injector 76) with the lower part on the upstream side of the gas flow and the upper part on the downstream side of the gas flow, and a folded dispersion injector (injector 77) with the upper part on the upstream side of the gas flow and the lower part on the downstream side of the gas flow. That is, for the injectors 76 and 77 included in the processing apparatus 10 of the embodiment, the positional relationship between the upstream side and the downstream side of the gas flow is reversed vertically. Thereby, by simultaneously supplying the same source gas (for example, silicon-containing gas) from the injectors 76 and 77, the non-uniformity of the supply of the source gas in the vertical direction can be offset.

[0043] Further, according to the processing apparatus 10 of the embodiment, the injectors 76 and 77 each include throttle portions 76c and 77c whose cross-sectional areas become smaller as they move away from the introduction ports 76b and 77b. Thereby, it is possible to suppress a decrease in the flow velocity on the downstream side of the gas flow, so that the uniformity of the thermal decomposition rate of the source gas in the vertical direction is improved.

[0044] As described above, it is possible to improve the uniformity in the vertical direction of the mass flow rate and the thermal decomposition rate of the source gas discharged toward the substrate W. As a result, the uniformity of the film characteristics among the substrates W of the formed silicon film is improved.

[0045] 〔Analysis Results〕 With reference to FIGS. 9 to 13, the results of analysis by computational fluid dynamics (CFD) (hereinafter referred to as "CFD analysis") will be described.

[0046] In the CFD analysis, when the form of the injector used to supply the source gas (Si2H6) into the processing vessel 34 was changed, it was analyzed how the mass flow rate of all the gases in the injector, the mass flow rate and the molar fraction of the reactive species (SiH2) changed. Note that the mass flow rate and the molar fraction of the reactive species (SiH2) were targeted for analysis because it was considered that the film thickness of the film deposited on the substrate W was caused by the concentration of the reactive species (Si2H6) generated by the thermal decomposition of the source gas (Si2H6).

[0047] First, with reference to FIGS. 9 to 11, the results of analyzing the mass flow rate of the total gas and the mass flow rate of SiH2 when discharging Si2H6 using injectors A to D having four different forms will be described.

[0048] FIG. 9 is a diagram showing the forms of the four different injectors A to D used in the analysis. In FIG. 9, the illustration of the gas holes is omitted.

[0049] As shown in FIG. 9, injector A has the same structure as injector 76 shown in FIG. 7, and is an upright dispersion injector having a frustum shape with a decreasing cross-sectional area as it moves away from the introduction port at the lower end. Injector B has the same structure as injector 77 shown in FIG. 7, and is a folded dispersion injector having a frustum shape with a decreasing cross-sectional area as the downward extending portion moves away from the introduction port. Injector C is a form combining injector A and injector B. Injector D is a form combining a cylindrical upright dispersion injector having a constant cross-sectional area from the lower end to the upper end and a cylindrical folded dispersion injector having a constant cross-sectional area for the downward extending portion.

[0050] FIG. 10 is a diagram showing the analysis results of the mass flow rate of the total gas. In FIG. 10, the horizontal axis represents the position of the gas hole, and the vertical axis represents the mass flow rate [sccm] of the total gas. The position of the gas hole indicates which gas hole is arranged from the top.

[0051] As shown in FIG. 10, it can be seen that when using injector C, the uniformity of the mass flow rate of the total gas in the vertical direction is improved compared to when using injectors A and B. From this result, it was shown that the uniformity of the mass flow rate of the total gas in the vertical direction is improved by using a frustum-shaped upright dispersion injector and a frustum-shaped folded dispersion injector.

[0052] FIG. 11 is a diagram showing the analysis results of the mass flow rate of SiH2. In FIG. 11, the horizontal axis represents the position of the gas hole, and the vertical axis represents the mass flow rate of SiH2 [sccm]. The position of the gas hole indicates which gas hole is arranged from the top.

[0053] As shown in FIG. 11, it can be seen that when using injector C, the uniformity of the mass flow rate of SiH2 in the vertical direction is improved compared with the cases of using injectors A, B, and D. From this result, it is shown that by using the frustum-shaped upright dispersion injector and the frustum-shaped folded dispersion injector, the uniformity of the mass flow rate of SiH2 in the vertical direction is improved. That is, it can be said that by using the frustum-shaped upright dispersion injector and the frustum-shaped folded dispersion injector, the uniformity of the thermal decomposition rate of Si2H6 in the vertical direction is improved.

[0054] Next, referring to FIGS. 12 and 13, the results of analyzing the thermal decomposition rate of SiH2 when discharging Si2H6 using injectors E to I having five different forms will be described.

[0055] FIG. 12 is a diagram showing the forms of five different injectors E to I used in the analysis. In FIG. 12, the illustration of the gas holes is omitted.

[0056] As shown in Fig. 12, the injector E has the same structure as the injector 76 shown in Fig. 7, and is a conical upright dispersion injector whose cross-sectional area decreases as it moves away from the introduction port at the lower end. The injector F has the same structure as the injector 77 shown in Fig. 2, and is a conical folded dispersion injector whose cross-sectional area decreases as the downward extending portion moves away from the introduction port. The injector G is, like the injector 77 shown in Fig. 7, a conical folded dispersion injector whose cross-sectional area decreases as the downward extending portion moves away from the introduction port. The injector H is a form in which the injector E and the injector F are combined. The injector I is a form in which the injector E and the injector G are combined.

[0057] Fig. 13 is a diagram showing the analysis results of the molar fraction of SiH2. In Fig. 13, the horizontal axis represents the position of the gas hole, and the vertical axis represents the mole fraction of SiH2. The position of the gas hole indicates which gas hole is arranged from the top.

[0058] As shown in Fig. 13, when the injectors H and I are used, it can be seen that the uniformity of the molar fraction of SiH2 in the vertical direction is improved compared to the case where the injectors E, F, and G are used. From this result, it was shown that the uniformity of the molar fraction of SiH2 in the vertical direction is improved by using a conical upright dispersion injector and a conical folded dispersion injector. That is, it can be said that the uniformity of the thermal decomposition rate of Si2H6 in the vertical direction is improved by using a conical upright dispersion injector and a conical folded dispersion injector.

[0059] Also, as shown in FIG. 13, when the injector G is used, it can be seen that the molar fraction of SiH2 shifts in the direction of decreasing compared to the case when the injector F is used. Similarly, when the injector I is used, it can be seen that the molar fraction of SiH2 shifts in the direction of decreasing compared to the case when the injector H is used. From this result, it was shown that by reducing the cross-sectional area of the upwardly extending portion in the frustum-shaped folding dispersion injector, the molar fraction of SiH2 can be relatively reduced.

[0060] In the above-described embodiment, the injector 76, the gas hole 76a, the introduction port 76b, and the throttle portion 76c are examples of the first injector, the first gas hole, the first introduction port, and the first throttle portion, respectively. Also, the injector 77, the gas hole 77a, the introduction port 77b, and the throttle portion 77c are examples of the second injector, the second gas hole, the second introduction port, and the second throttle portion, respectively.

[0061] The embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. The above embodiments may be omitted, substituted, or changed in various forms without departing from the scope and spirit of the appended claims.

Explanation of Reference Numerals

[0062] 10 Processing apparatus 34 Processing container 76,77 Injector 76a,77a Gas hole 76b,77b Introduction port 76c,77c Throttle portion

Claims

1. A processing vessel having a substantially cylindrical shape; a first injector extending in a longitudinal direction along an inner side of an inner wall of the processing vessel, the first injector having a first introduction port formed at a lower end and a plurality of first gas holes formed in the extending portion; a second injector extending upward along the inside of an inner wall of the processing vessel, turning back at an upper portion and then extending downward, the second injector having a second introduction port formed at a lower end of the upwardly extending portion and a plurality of second gas holes formed in the downwardly extending portion; Equipped with the first injector includes a first throttle portion having a cross-sectional area that decreases with increasing distance from the first introduction port; the second injector includes a second throttle portion formed in the downwardly extending portion, the second throttle portion having a cross-sectional area that decreases with increasing distance from the second introduction port. Processing unit.

2. the second injector has a cross-sectional area of ​​the upwardly extending portion smaller than a cross-sectional area of ​​the downwardly extending portion; The processing device of claim 1 .

3. The plurality of first gas holes and the plurality of second gas holes are arranged at the same height position. The processing device according to claim 1 or 2.

4. The plurality of first gas holes are formed in the first throttle portion. The processing device according to any one of claims 1 to 3.

5. The plurality of second gas holes are formed in the second throttle portion. The processing device according to any one of claims 1 to 4.

6. The first and second throttling portions have a conical shape or a frusto-conical shape. The processing device according to any one of claims 1 to 5.

7. a surface of the first throttle portion in which the plurality of first gas holes are formed and a surface of the second throttle portion in which the plurality of second gas holes are formed are parallel to a vertical direction; The processing device according to any one of claims 1 to 6.

8. A processing vessel having a substantially cylindrical shape; a first injector extending in a longitudinal direction along an inner side of an inner wall of the processing vessel, the first injector having a first introduction port formed at a lower end and a plurality of first gas holes formed in the extending portion; a second injector extending upward along the inside of an inner wall of the processing vessel, turning back at an upper portion and then extending downward, the second injector having a second introduction port formed at a lower end of the upwardly extending portion and a plurality of second gas holes formed in the downwardly extending portion; Equipped with the first injector includes a first throttle portion having a cross-sectional area that decreases with increasing distance from the first introduction port; the second injector includes a second throttle portion formed in the downwardly extending portion, the second throttle portion having a cross-sectional area that decreases with increasing distance from the second introduction port. A processing method in a processing device, comprising: supplying the same process gas from the first injector and the second injector simultaneously. Processing methods.

Images