Device for thermal control of wafer

The thermal control apparatus addresses slow heat transitions in semiconductor manufacturing by using a plate, tanks, and valves to rapidly switch between cooling and heating modes, ensuring efficient substrate temperature control.

JP2025100479APending Publication Date: 2025-07-03ASM IP HLDG BV
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
JP2024224378
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-12-22
Filing Date
2024-12-19
Publication Date
2025-07-03

AI Technical Summary

Technical Problem

Existing substrate cooling and heating systems in semiconductor manufacturing have high heat capacity, leading to slow heat mode changes and vaporization issues during transitions.

Method used

A thermal control apparatus with a plate, cryogenic and high-temperature tanks, switching valves, and pumps to rapidly switch between cooling and heating modes using fluid lines and a controller for efficient temperature control.

Benefits of technology

Enables rapid and efficient heating and cooling of substrates by minimizing heat capacity and preventing fluid vaporization, improving process efficiency.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2025100479000001_ABST
    Figure 2025100479000001_ABST
Patent Text Reader

Abstract

To provide a device for thermal control of a wafer.SOLUTION: A device having wafer temperature control capability includes: a plate configured to control temperature of a wafer disposed thereon; a cold tank and a hot tank for storing a cold fluid and a hot fluid, respectively; a cooling and a heating devices for cooling and heating the fluids in the cold tank and the hot tank, respectively; a discharge switching valve configured to control a direction of the fluid out of the plate; an injection switching valve configured to control a direction of the fluid entering into the plate; a first fluid line; a second fluid line; a third fluid line; a fourth fluid line; a pump configured to pump the fluid in the input path into the plate; and a controller configured to control an open state of the discharge switching valve and the injection switching valve.SELECTED DRAWING: Figure 1
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present disclosure relates to a substrate support device, and more particularly, to a device having the ability to control the temperature of a substrate disposed thereon.

Background Art

[0002] In semiconductor manufacturing and / or processing, substrates require cooling and heating in various processes.

[0003] However, the plate for cooling the substrate has a high heat capacity and takes a long time for heat mode changes, i.e., from heating to cooling or from cooling to heating. In addition, the coolant can easily vaporize when the mode changes from cooling to heating.

[0004] Therefore, the present disclosure provides a simpler and easier system and method for heating and / or cooling wafers in the same space. Summary of the Disclosure

Summary of the Invention

[0005] This summary is provided to introduce some concepts in a simplified form. These concepts are described in more detail in the detailed description of the exemplary embodiments of the present disclosure below. This summary is not intended to identify the main features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0006] According to one embodiment, an apparatus for thermal control of a wafer can be provided. The apparatus includes a plate configured to control the temperature of the wafer disposed thereon, a cryogenic tank configured to store a fluid, a cooling device configured to cool the fluid in the cryogenic tank to a temperature below a first threshold value, a high-temperature tank configured to store the fluid, a heating device configured to heat the fluid in the high-temperature tank to another temperature exceeding a second threshold value, a discharge switching valve configured to control the direction of the fluid exiting the plate, an injection switching valve configured to control the direction of the fluid entering the plate, a first fluid line disposed between the discharge switching valve and the high-temperature tank and configured to fluidly connect the discharge switching valve and the high-temperature tank, a second fluid line disposed between the discharge switching valve and the cryogenic tank and configured to fluidly connect the discharge switching valve and the cryogenic tank, a third fluid line disposed between the high-temperature tank and the injection switching valve and configured to fluidly connect the high-temperature tank and the injection switching valve, a fourth fluid line disposed between the cryogenic tank and the injection switching valve and configured to fluidly connect the cryogenic tank and the injection switching valve, a pump disposed on the injection path and configured to pump the fluid in the injection path into the plate, and a controller electrically connected to the discharge switching valve and the injection switching valve and configured to control the open states of the discharge switching valve and the injection switching valve.

[0007] In at least one aspect, the plate further has a first portion and a second portion. A fluid path, which is a long continuous path without overlap, is grooved on the first portion. A first end of the fluid path and a second end of the fluid path are exposed outside the plate. The first portion and the second portion are configured to seal the fluid path.

[0008] In at least one aspect, the device further comprises an injection path disposed between the injection switching valve and the first end of the fluid path, the injection path being configured to fluidly connect the injection switching valve and the first end of the fluid path, and a discharge path disposed between the second end of the fluid path and the discharge switching valve, the discharge path being configured to fluidly connect the second end of the fluid path and the discharge switching valve.

[0009] In at least one aspect, the device further comprises a first joint disposed at the first end of the fluid path and configured to seal the contact region between the first end of the fluid path and the injection path, and a second joint disposed at the second end of the fluid pipe and configured to seal the contact region between the second end of the fluid path and the discharge path.

[0010] In at least one aspect, the plate further comprises a first portion, a second portion, and a pipe. The fluid pipe is a long continuous path covering the plate. The first end and the second end of the fluid pipe are exposed outside the plate, and the fluid pipe is disposed between the first portion and the second portion.

[0011] In at least one aspect, the device further comprises an injection path disposed between the injection switching valve and the first end of the fluid pipe, the injection path being configured to fluidly connect the injection switching valve and the first end of the fluid pipe, and a discharge path disposed between the second end of the fluid pipe and the discharge switching valve, the discharge path being configured to fluidly connect the second end of the fluid pipe and the discharge switching valve.

[0012] In at least one aspect, the device further comprises a first joint disposed at the first end of the fluid pipe and configured to seal the contact region between the first end of the fluid pipe and the injection path, and a second joint disposed at the second end of the fluid pipe and configured to seal the contact region between the second end of the fluid pipe and the discharge path.

[0013] In at least one aspect, the apparatus further comprises a filler configured to fill the space between the first part, the second part, and the outside of the fluid pipe.

[0014] According to one embodiment, an apparatus for thermal control of a wafer can be provided. The apparatus includes a plate configured to control the temperature of the wafer disposed thereon, a cryogenic tank configured to store a fluid, a cooling device configured to cool the fluid in the cryogenic tank to a temperature below a first threshold value, a high-temperature tank configured to store the fluid, a heating device configured to heat the fluid in the high-temperature tank to a temperature exceeding a second threshold value, a discharge switching valve configured to control the direction of the fluid exiting the plate, an injection switching valve configured to control the direction of the fluid entering the plate, a first fluid line disposed between the discharge switching valve and the high-temperature tank and configured to fluidly connect the discharge switching valve and the high-temperature tank, a second fluid line disposed between the discharge switching valve and the cryogenic tank and configured to fluidly connect the discharge switching valve and the cryogenic tank, a third fluid line disposed between the high-temperature tank and the injection switching valve and configured to fluidly connect the high-temperature tank and the injection switching valve, a fourth fluid line disposed between the cryogenic tank and the injection switching valve and configured to fluidly connect the cryogenic tank and the injection switching valve, a first pump configured to pump the fluid in the high-temperature tank into the plate, a second pump configured to pump the fluid in the cryogenic tank into the plate, and a controller electrically connected to the discharge switching valve and the injection switching valve and configured to control the open states of the discharge switching valve and the injection switching valve.

[0015] In at least one aspect, the plate further comprises a first part and a second part, a fluid path that is a long continuous path without overlap is grooved on the first part, a first end of the fluid path and a second end of the fluid path are exposed outside the plate, and the first part and the second part are configured to seal the fluid path.

[0016] In at least one aspect, the device further comprises an injection path disposed between the injection switching valve and the first end of the fluid path and configured to fluidly connect the injection switching valve and the first end of the fluid path, and a discharge path disposed between the second end of the fluid path and the discharge switching valve and configured to fluidly connect the second end of the fluid path and the discharge switching valve.

[0017] In at least one aspect, the device further comprises a first joint disposed at the first end of the fluid path and configured to seal the contact region between the first end of the fluid path and the injection path, and a second joint disposed at the second end of the fluid pipe and configured to seal the contact region between the second end of the fluid path and the discharge path.

[0018] In at least one aspect, the plate further comprises a first portion and a second portion, and a fluid pipe which is a long continuous path covering the plate, wherein the first end and the second end of the fluid pipe are exposed outside the plate, and the fluid pipe is disposed between the first portion and the second portion.

[0019] In at least one aspect, the device further comprises an injection path disposed between the injection switching valve and the first end of the fluid pipe and configured to fluidly connect the injection switching valve and the first end of the fluid pipe, and a discharge path disposed between the second end of the fluid pipe and the discharge switching valve and configured to fluidly connect the second end of the fluid pipe and the discharge switching valve.

[0020] In at least one aspect, the device further comprises a first joint disposed at the first end of the fluid pipe and configured to seal the contact region between the first end of the fluid pipe and the injection path, and a second joint disposed at the second end of the fluid pipe and configured to seal the contact region between the second end of the fluid pipe and the discharge path.

[0021] In at least one aspect, the apparatus further comprises a filler configured to fill a space between the first part, the second part, and the outside of the fluid pipe.

[0022] In at least one aspect, the controller is further electrically coupled to the first pump and the second pump and is further configured to control the operating states of the first pump and the second pump.

[0023] In at least one aspect, the controller is further configured to control the injection switching valve to open the third fluid line, control the discharge switching valve to open the first fluid line for heated fluid circulation, control the injection switching valve to open the fourth fluid line, and control the discharge switching valve to open the second fluid line for cooled fluid circulation.

[0024] In at least one aspect, the boiling point of the fluid is above a third threshold temperature.

[0025] In at least one aspect, the first part and the second part are black-anodized and the thickness of the plate is 15 mm or less. Brief Description of the Drawings

[0026] It will be understood that the elements in the figures are illustrated for simplicity and clarity and are not necessarily drawn to scale. For example, some of the dimensions of the elements in the figures may be exaggerated relative to other elements to assist in the understanding of the illustrated embodiments of the present disclosure.

Brief Description of the Drawings

[0027]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

[0028] Certain specific embodiments and examples are disclosed below, but it will be understood by those skilled in the art that the present invention extends beyond the specifically disclosed embodiments and / or uses of the present invention, and obvious modifications and equivalents thereof. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specific disclosed embodiments described below.

[0029] As used in the present disclosure, the term "substrate" may refer to one or more arbitrary base materials such as one or more arbitrary base materials that may be modified or on which devices, circuits, or films may be formed. The "substrate" may be continuous or discontinuous, rigid or flexible, solid or porous, and combinations thereof. The substrate may be in any form such as powder, plate, or workpiece. Examples of substrates in the form of plates may include wafers of various shapes and sizes. The substrate may be made of semiconductor materials such as, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0030] As an example, a substrate in the form of powder may have applications for pharmaceutical manufacturing. The porous substrate may contain a polymer. Examples of workpieces may include medical devices (eg, stents and syringes), jewelry, touring devices, components for battery manufacturing (eg, anodes, cathodes, or separators), or components of a photovoltaic cell.

[0031] The continuous substrate may extend beyond the boundaries of the process chamber in which the deposition process occurs. In some processes, the continuous substrate may move through the process chamber, whereby the process is continued until it reaches the end of the substrate. The continuous substrate may be supplied from a continuous substrate supply system to enable the manufacture and production of the continuous substrate in any suitable form.

[0032] Non-limiting examples of continuous substrates may include sheets, non-woven membranes, rolls, foils, webs, flexible materials, bundles of continuous filaments or fibers (e.g., ceramic fibers or polymer fibers). The continuous substrate may also include a carrier or sheet on which a discontinuous substrate is placed.

[0033] The examples presented in this disclosure are not meant to be the actual form of any particular material, structure, or device, but are merely idealized representations used to illustrate embodiments of this disclosure.

[0034] The specific examples illustrated and described are examples of the invention and its best mode, and are not intended to limit the scope of this aspect or this implementation in any way. Also, for the sake of brevity, conventional manufacturing, related, preparation, and other functional aspects of this system may not be described in detail. Further, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between the various elements. Many alternative or additional functional relationships, or physical connections, may exist in the actual system, and / or may not exist in some embodiments.

[0035] The configurations and / or approaches described in this disclosure are essentially exemplary, and it should be understood that these specific embodiments or examples should not be considered in a limiting sense as numerous modifications are possible. The specific routines or methods described in this disclosure may represent one or more of several processing strategies. Therefore, the various operations illustrated may be performed in the order illustrated, in other orders, or in some cases, omitted.

[0036] The subject matter of this disclosure encompasses not only all novel and non-obvious combinations and sub-combinations of the various processes, systems, and configurations disclosed in this disclosure, as well as other configurations, functions, operations, and / or characteristics, but also all equivalents thereof.

[0037] FIG. 1 is an overall schematic diagram showing an overview of an entire apparatus according to an embodiment of this disclosure.

[0038] Generally, cooling / heating of the substrate is performed within chamber 100. A plate 110 for cooling / heating (thermal control) the substrate disposed thereon is illustrated within chamber 100.

[0039] Fluid 10 may be used to cool or heat the substrate on plate 110. The apparatus also includes a cryogenic tank 120 and a high-temperature tank 123 for storing the fluid, and a cooling device 121 and a heating device 124 for cooling and heating the fluid within each of tanks 120 and 123. The apparatus also includes an injection switching valve 162 and a discharge switching valve 161 for switching between the tanks (120, 123) to select which process (cooling or heating) to apply to the substrate disposed on the plate. The apparatus may also include an injection path 151 and a discharge path 152 for the fluid entering or exiting plate 110, respectively.

[0040] The inside of the plate can be as exemplified in FIG. 3. As shown, the plate 300 may have a configuration having a first portion 310 and a second portion 320. The first portion 310 is slightly thicker than the second portion 320, and the fluid path 330 may be grooved on the first portion 310 (the thicker portion). The fluid path 330 is a long continuous path extending across the entire first portion 310 of the plate 300, and the fluid paths 330 do not overlap. The first portion 310 outside the fluid path 330, i.e., the region 311, is a thermally conductive material such as Al and / or any other material having a high conductivity. The two ends of the fluid paths 331, 332 may be exposed to the outside of the plate and may be used as the fluid injection point and the discharge point. When the first portion 310 and the second portion 320 can be attached, the fluid path 330 may be completely sealed so that fluid cannot leak from there.

[0041] As shown in FIG. 5, in another embodiment, the plate 500 may include a first portion 510, a second portion 520, and a fluid pipe 530. The fluid pipe 530 is a separate curved pipe and extends over the same range as the grooved fluid path 330. The outside of the fluid pipe 530 between the first portion 510 and the second portion 520 may be filled with a filler 511, and this filler 511 may be configured to include a highly conductive material such as Al. Any other material other than Al can also be used if the material (or mixture of materials) has a high thermal conductivity.

[0042] The cooling device 121 may be configured to cool the temperature of the fluid in the low-temperature tank 120. A low threshold temperature may be set for the device 121 to maintain the temperature of the fluid in the low-temperature tank 120 below the low threshold.

[0043] The heating device 124 may be configured to heat the temperature of the fluid in the high-temperature tank 123. A high threshold temperature may be set for the heating device 124 to maintain the temperature of the high-temperature tank 123 above the high threshold. Usually, the low threshold may be 20 °C (degrees Celsius) or less, and the high threshold may be 270 °C (degrees Celsius) or more.

[0044] When heating the substrate on the plate 110, the fluid from the high-temperature tank 123 is pump-injected into the plate 110 through the third fluid line 156 by the second pump 142. The injection switching valve 162 may be opened with respect to the third fluid line 156 (which means that the fourth fluid line 155 is closed), and the high-temperature fluid heated beyond the high threshold is made to flow into the first end of the fluid path 331 (or fluid pipe 531) through the injection path 151. The high-temperature fluid flows along the fluid path 330 (or fluid pipe 530), heats the substrate disposed on the plate 110, and the temperature of the fluid can be lowered. This cooled fluid may be configured to be discharged from the plate 110 from the second end of the fluid path 332 (or fluid pipe 532). Next, the fluid 10 proceeds through the discharge path 152 to the discharge switching valve 161. The discharge switching valve 161 may be opened (while the second fluid line 154 is closed) the first fluid line 153 to return this cooled fluid to the high-temperature tank 123 for reheating.

[0045] When cooling the substrate on the plate 110, the fluid 10 from the cryogenic tank 120 is pumped into the plate 110 via the fourth fluid line 155 by the first pump 141. The injection switching valve 162 may be opened with respect to the fourth fluid line 155 (which means that the third fluid line 156 is closed), and the cryogenic fluid cooled below a low threshold value is caused to flow into the first end of the fluid path 331 (or fluid pipe 531) via the injection path 151. The cryogenic fluid flows along the fluid path 330 (or fluid pipe 530), cools the substrate disposed on the plate 110, and the temperature of the fluid 10 may rise. This somewhat heated fluid may be discharged from the plate 110 from the second end of the fluid path 332 (or fluid pipe 532). Next, the fluid 10 proceeds through the discharge path 152 to the discharge switching valve 161. The discharge switching valve 161 may be configured to open the second fluid line 154 (while the first fluid line 153 is blocked) to return this heated fluid to the cryogenic tank 120 for recooling.

[0046] The opening and closing of the injection switching valve 162 and the discharge switching valve 161 may be controlled by the controller 160. The controller 160 may be electrically connected to the discharge switching valve 161 and the injection switching valve 162, respectively, by wire or wirelessly (131, 132).

[0047] Also, the controller 160 may be configured to control the injection switching valve 162 and the discharge switching valve 161 such that when the third fluid line 156 can be opened (which means that the fourth fluid line 155 is closed), the first fluid line 153 can be opened simultaneously (which means that the second fluid line 154 is closed). Also, the controller 160 may be configured to control the injection switching valve 162 and the discharge switching valve 161 such that when the fourth fluid line 155 can be opened (which means that the third fluid line 156 is closed), the second fluid line 154 can be opened simultaneously (which means that the first fluid line 153 is closed).

[0048] Further, the controller 160 may also be connected to the first and second pumps 141, 142 to control the operations 133, 134 respectively. When heating the substrate, the cryogenic fluid in the cryogenic tank 120 may not be necessary, and thus the controller 160 may be configured to control and stop the first pump 141 while the second pump 142 is operating. When cooling the substrate, the high-temperature fluid in the high-temperature tank 123 may not be necessary, and thus the controller 160 may be configured to control and stop the second pump 142 while the first pump 141 is operating.

[0049] In some applications, additional fluid seals may be required. As shown in FIGS. 1, 3, and 5, the first and second ends of the fluid paths 331, 332 (or fluid pipes 531, 532) may be connected to the injection path 151 and the discharge path 152, and the first joint 111 may be configured to seal the contact area of the injection path 151 and the first end of the fluid path 331 (or fluid pipe 531), and the second joint 112 may be configured to seal the contact area of the discharge path 152 and the second end of the fluid path 332 (or fluid pipe 532).

[0050] In some applications, the injection path 151 and / or the discharge path 152 may not be required.

[0051] As shown in FIG. 4, the plate 410 may be set up to be directly connected to the injection switching valve 461 and the output switching valve 462. In this case, the first joint 111 and the second joint 112 may not be required.

[0052] In another embodiment, a configuration with one pump instead of two pumps may be provided.

[0053] FIG. 2 shows a plate 210 for cooling / heating (thermal control) a substrate disposed thereon.

[0054] Fluid 11 may be used to cool or heat the substrate on plate 210. The apparatus also includes a low-temperature tank 220 and a high-temperature tank 223 for storing fluid 11, and a cooling device 221 and a heating device 224 for cooling and heating the respective fluids in tanks 220 and 223. The apparatus also includes an injection switching valve 262 and a discharge switching valve 261 for switching between the tanks (220, 223) to select which process (cooling or heating) to apply to the substrate disposed on plate 210. The apparatus may also include an injection path 251 and a discharge path 252 for fluid 11 entering or exiting plate 210, respectively.

[0055] The cooling device 221 may be configured to cool the temperature of the fluid 11 in the low-temperature tank 220. A low threshold temperature may be set for the device 221 to maintain the temperature of the fluid in the low-temperature tank 220 below the low threshold.

[0056] The heating device 224 may be configured to heat the temperature of the fluid 11 in the high-temperature tank 223. A high threshold temperature may be set for the heating device 224 to maintain the temperature of the high-temperature tank 223 above the high threshold.

[0057] When heating the substrate on the plate 210, the fluid 11 from the high-temperature tank 223 is pumped into the plate 210 through the third fluid line 256 by the pump 242. The injection switching valve 262 is opened with respect to the third fluid line 256 (which means that the fourth fluid line 255 is closed), and it may be configured to flow the high-temperature fluid heated beyond a high threshold value into the first end of the fluid path 331 (or fluid pipe 531) through the injection path 251. The high-temperature fluid flows along the fluid path 330 (or fluid pipe 530), heats the substrate disposed on the plate 210, and can lower the temperature of the fluid 11. This cooled fluid may be configured to be discharged from the plate 210 from the second end of the fluid path 332 (or fluid pipe 532). Next, the fluid 11 flows through the discharge path 252 to the discharge switching valve 261. The discharge switching valve 261 may be opened (while the second fluid line 254 is closed) to return this cooled fluid to the high-temperature tank 223 for reheating.

[0058] When cooling the substrate on the plate 210, the fluid 11 from the low-temperature tank 220 is pumped into the plate 210 through the fourth fluid line 255 by the pump 142. The injection switching valve 262 is opened with respect to the fourth fluid line 255 (which means that the third fluid line 256 is closed), and it may be configured to flow the low-temperature fluid cooled below a low threshold value into the first end of the fluid path 331 (or fluid pipe 531) through the injection path 251. The low-temperature fluid flows along the fluid path 330 (or fluid pipe 530), cools the substrate disposed on the plate 210, and can raise the temperature of the fluid 11. This somewhat heated fluid may be configured to be discharged from the plate 210 at the second end of the fluid path 332 (or fluid pipe 532). Next, the fluid 11 flows through the discharge path 252 to the discharge switching valve 261. The discharge switching valve 261 may be controlled to open the second fluid line 254 (while the first fluid line 253 is closed) to return this heated fluid to the low-temperature tank 220 for recooling.

[0059] The opening and closing of the injection switching valve 262 and the discharge switching valve 261 may be controlled by the controller 260. The controller 260 may be electrically connected to the discharge switching valve 261 and the injection switching valve 262 by wire or wirelessly (231, 232), respectively.

[0060] Further, the controller 260 may be configured to control the injection switching valve 262 and the discharge switching valve 261 such that when the controller 260 can open the third fluid line 256 (which means that the fourth fluid line 255 is closed), it can simultaneously open the first fluid line 253 (which means that the second fluid line 254 is closed). Also, the controller 260 may be configured to control the injection switching valve 262 and the discharge switching valve 261 such that when the controller 260 can open the fourth fluid line 255 (which means that the third fluid line 256 is closed), the second fluid line 254 can be simultaneously opened (which means that the first fluid line 253 is closed).

[0061] Also, the controller 160 may be connected to the pump 242 to control its operation (233), such as increasing or decreasing the flow rate, or turning it on / off.

[0062] The fluid (10, 11) may have a high boiling point for efficient thermal control. The boiling point may be higher than a high threshold so that it does not vaporize during heating. The boiling point of the fluid may be another threshold higher than the boiling threshold, and the boiling threshold may be higher than the high threshold.

[0063] For efficient thermal control, the thickness of the plates 110, 210 may need to be made sufficiently thin. Preferably, the thickness of the plates 110, 210 can be 15 mm or less.

[0064] The plate, i.e., the first part, the second part, and the fluid pipe, as well as the filler, may also be anodized black for maximum thermal conductivity and may be made of materials including aluminum (Al), copper (Cu), and other high thermal conductivity materials or alloys, or mixtures of two or more of them. The plate and the fluid line may also be made of materials resistant to electrolyte corrosion.

[0065] The above-described configuration of the device is merely an exemplification of the application of the principles of the present invention, and numerous other embodiments and variations are possible without departing from the spirit and scope of the present invention as defined in the claims. Therefore, the scope of the present invention should not be determined with reference to the above description, but instead should be determined with reference to the appended claims together with the full scope of their equivalents.

Explanation of Reference Numerals

[0066] 10 Fluid 11 Fluid 100 Chamber 110 Plate 111 First Joint 112 Second Joint 120 Low-temperature Tank 121 Cooling Device 123 High-temperature Tank 124 Heating Device 131 Wireless 132 Wireless 133 Operation 134 Operation 141 First Pump 142 Second Pump 151 Injection Path 152 Discharge Path 153 First Fluid Line 154 Second Fluid Line 155 Fourth Fluid Line 156 Third Fluid Line 160 Controller 161 Discharge Switching Valve 162 Injection Switching Valve 210 Plate 220 Low-temperature tank 221 Cooling device 223 High-temperature tank 224 Heating device 231 Wireless 232 Wireless 233 Operation 242 Pump 251 Injection path 252 Discharge path 253 First fluid line 254 Second fluid line 255 Fourth fluid line 256 Third fluid line 260 Controller 261 Discharge switching valve 262 Injection switching valve 300 Plate 310 First part 311 Region 320 Second part 330 Fluid path 331 Fluid path 332 Fluid path 410 Plate 461 Injection switching valve 462 Output switching valve 500 Plate 510 First part 511 Filling material 520 Second part 530 Fluid pipe 531 Fluid pipe 532 Fluid pipe

Claims

1. An apparatus for thermal control of a wafer, comprising: a fluid; a plate configured to control the temperature of the wafer disposed thereon using the fluid; a low-temperature tank and a high-temperature tank configured to store the fluid; a cooling device configured to cool the fluid in the low-temperature tank to a first temperature below a first threshold value; a heating device configured to heat the fluid in the high-temperature tank to a second temperature above a second threshold value; a discharge switching valve configured to control the direction of the fluid exiting the plate; an injection switching valve configured to control the direction of the fluid entering the plate; a first fluid line disposed between the discharge switching valve and the high-temperature tank and configured to fluidly connect the discharge switching valve and the high-temperature tank; a second fluid line disposed between the discharge switching valve and the low-temperature tank and configured to fluidly connect the discharge switching valve and the low-temperature tank; a third fluid line disposed between the high-temperature tank and the injection switching valve and configured to fluidly connect the high-temperature tank and the injection switching valve; a fourth fluid line disposed between the low-temperature tank and the injection switching valve and configured to fluidly connect the low-temperature tank and the injection switching valve; a pump configured to pump the fluid into the plate; a controller electrically connected to the discharge switching valve and the injection switching valve and configured to control the open states of the discharge switching valve and the injection switching valve.

2. The plate further has a first portion and a second portion, and a fluid path, which is a long continuous path without overlap, is grooved on the first portion, a first end of the fluid path and a second end of the fluid path are exposed outside the plate, and the first portion and the second portion are configured to seal the fluid path. The apparatus according to claim 1.

3. an injection path disposed between the injection switching valve and the first end of the fluid path and configured to fluidly connect the injection switching valve and the first end of the fluid path; a discharge path disposed between the second end of the fluid path and the discharge switching valve and configured to fluidly connect the second end of the fluid path and the discharge switching valve; The apparatus according to claim 2, further comprising.

4. A first joint portion disposed at the first end of the fluid path and configured to seal the contact region between the first end of the fluid path and the injection path; A second joint portion disposed at the second end of the fluid path and configured to seal the contact region between the second end of the fluid path and the discharge path; The apparatus according to claim 3, further comprising the above.

5. The plate further comprises a first portion, a second portion, and a fluid pipe, the fluid pipe being a long continuous path covering the plate, The first end and the second end of the fluid pipe are exposed outside the plate, and the fluid pipe is disposed between the first portion and the second portion. The apparatus according to claim 1.

6. An injection path disposed between the injection switching valve and the first end of the fluid pipe and configured to fluidly connect the injection switching valve and the first end of the fluid pipe; A discharge path disposed between the second end of the fluid pipe and the discharge switching valve and configured to fluidly connect the second end of the fluid pipe and the discharge switching valve; The apparatus according to claim 5, further comprising the above.

7. A first joint portion disposed at the first end of the fluid pipe and configured to seal the contact region between the first end of the fluid pipe and the injection path; A second joint portion disposed at the second end of the fluid pipe and configured to seal the contact region between the second end of the fluid pipe and the discharge path; The apparatus according to claim 6, further comprising the above.

8. Further comprising a filler configured to fill the space between the first portion, the second portion, and the fluid pipe, The apparatus according to claim 5.

9. An apparatus for thermal control of a wafer, comprising: A fluid; A plate configured to control the temperature of the wafer disposed thereon using the fluid; A cryogenic tank and a high-temperature tank configured to store the fluid; A cooling device configured to cool the fluid in the cryogenic tank to a temperature below a first threshold; A heating device configured to heat the fluid in the high-temperature tank to a temperature above a second threshold; A discharge switching valve configured to control the direction of the fluid exiting the plate; An injection switching valve configured to control the direction of the fluid entering the plate; A first fluid line disposed between the discharge switching valve and the high-temperature tank and configured to fluidly connect the discharge switching valve and the high-temperature tank; A second fluid line disposed between the discharge switching valve and the low-temperature tank and configured to fluidly connect the discharge switching valve and the low-temperature tank; A third fluid line disposed between the high-temperature tank and the injection switching valve and configured to fluidly connect the high-temperature tank and the injection switching valve; A fourth fluid line disposed between the low-temperature tank and the injection switching valve and configured to fluidly connect the low-temperature tank and the injection switching valve; A first pump configured to pump the fluid in the high-temperature tank into the plate; A second pump configured to pump the fluid in the low-temperature tank into the plate; A controller electrically connected to the discharge switching valve and the injection switching valve, the controller being configured to control the open states of the discharge switching valve and the injection switching valve. An apparatus comprising:

10. The plate further comprises a first portion and a second portion, and a fluid path, which is a long continuous path without overlap, is grooved on the first portion; The first end of the fluid path and the second end of the fluid path are exposed outside the plate, and the first portion and the second portion are configured to seal the fluid path. The apparatus according to claim 9.

11. An injection path disposed between the injection switching valve and the first end of the fluid path and configured to fluidly connect the injection switching valve and the first end of the fluid path; A discharge path disposed between the second end of the fluid path and the discharge switching valve and configured to fluidly connect the second end of the fluid path and the discharge switching valve; The apparatus according to claim 10, further comprising:

12. A first joint disposed at the first end of the fluid path and configured to seal the contact region between the first end of the fluid path and the injection path; A second joint disposed at the second end of the fluid path and configured to seal the contact region between the second end of the fluid path and the discharge path; The apparatus according to claim 11, further comprising:

13. The plate further comprises a first part, a second part and a fluid pipe, and the fluid pipe is a long continuous path covering the plate. The apparatus according to claim 9, wherein a first end of the fluid pipe and a second end of the fluid pipe are exposed outside the plate, and the fluid pipe is disposed between the first part and the second part.

14. An injection path disposed between the injection switching valve and the first end of the fluid pipe and configured to fluidly connect the injection switching valve and the first end of the fluid pipe. A discharge path disposed between the second end of the fluid pipe and the discharge switching valve and configured to fluidly connect the second end of the fluid pipe and the discharge switching valve. The apparatus according to claim 13, further comprising the above.

15. A first joint disposed at the first end of the fluid pipe and configured to seal a contact region between the first end of the fluid pipe and the injection path. A second joint disposed at the second end of the fluid pipe and configured to seal a contact region between the second end of the fluid pipe and the discharge path. The apparatus according to claim 14, further comprising the above.

16. A filler configured to fill a space created between the first part, the second part and the fluid pipe. The apparatus according to claim 13, further comprising the above.

17. The controller is further electrically coupled to the first pump and the second pump and is further configured to control the operating states of the first pump and the second pump. The controller controls the injection switching valve to open the third fluid line and the discharge switching valve and open the first fluid line for heated fluid circulation. The apparatus according to claim 9, further configured to control the injection switching valve to open the fourth fluid line and the discharge switching valve and open the second fluid line for cooled fluid circulation.

18. The controller controls the injection switching valve to open the third fluid line and the discharge switching valve and open the first fluid line for heated fluid circulation. The apparatus according to claim 1, further configured to control the injection switching valve to open the fourth fluid line and the discharge switching valve and to open the second fluid line for a cooled fluid circulation.

19. the boiling point of the fluid exceeds a third threshold temperature, the first portion and the second portion are black anodized, The apparatus according to claim 2, wherein the thickness of the plate is 15 mm or less.

20. the boiling point of the fluid exceeds a third threshold temperature, the first portion and the second portion are black anodized, The apparatus according to claim 10, wherein the thickness of the plate is 15 mm or less.