Substrate processing apparatus and substrate processing method

Abstract

To provide a technique that can suppress adhesion of particles to a substrate.SOLUTION: A substrate processing apparatus according to an embodiment of the present disclosure includes a vacuum vessel, a rotary table provided within the vacuum vessel, a mounting table that is rotatable relative to the rotary table and has a recess on which a substrate is placed, and a control unit, and the rotation axis of the mounting table is positioned radially offset from the center of the rotary table, and the control unit performs a process of forming a film on the substrate placed in the recess while maintaining the rotary table and the mounting table rotating in opposite directions.SELECTED DRAWING: Figure 9

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] There is known an apparatus that performs processing on a substrate while the substrate placed on a rotating table rotates and revolves within a processing chamber (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of suppressing the adhesion of particles onto a substrate.

Means for Solving the Problems

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a vacuum chamber, a rotating table provided in the vacuum chamber, a mounting table that is rotatable relative to the rotating table and has a recess on which a substrate is placed, and a control unit. A rotation axis of the mounting table is provided at a position radially offset from the center of the rotating table. The control unit executes a process of forming a film on the substrate placed in the recess while maintaining a state in which the rotating table and the mounting table rotate in opposite directions to each other.

Effects of the Invention

[0006] According to the present disclosure, the adhesion of particles onto a substrate can be suppressed.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Mode for Carrying Out the Invention

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding members or components are denoted by the same or corresponding reference numerals, and duplicate descriptions are omitted.

[0009] 〔Substrate Processing Apparatus〕 Referring to FIGS. 1 to 5, the substrate processing apparatus 300 according to the embodiment will be described. FIG. 1 is a cross-sectional view showing the substrate processing apparatus 300 according to the embodiment. FIG. 2 is a plan view showing the configuration inside the vacuum chamber 311 of the substrate processing apparatus 300 of FIG. 1. In FIG. 2, for convenience of explanation, the illustration of the top plate 311b is omitted. FIG. 3 is a perspective view showing the configuration of the rotating table 321 and the mounting table 321a of the substrate processing apparatus 300 of FIG. 1. FIG. 4 is a cross-sectional view showing the configuration inside the storage box 322 of the substrate processing apparatus 300 of FIG. 1. FIG. 5 is a cross-sectional view showing the configuration of the mounting table 321a of the substrate processing apparatus 300 of FIG. 1.

[0010] The substrate processing apparatus 300 includes a processing unit 310, a rotation driving device 320, and a control unit 390.

[0011] The processing unit 310 is configured to perform a film forming process for forming a film on the substrate W. The substrate W is, for example, a semiconductor wafer. The processing unit 310 has a vacuum chamber 311, a gas inlet 312, a gas outlet 313, a transfer port 314, a heating unit 315, and a cooling unit 316.

[0012] The vacuum chamber 311 is a container whose interior can be depressurized. The vacuum chamber 311 has a flat shape with a substantially circular planar shape and accommodates a plurality of substrates W therein. The vacuum chamber 311 includes a main body 311a, a top plate 311b, a side wall body 311c, and a bottom plate 311d (FIG. 1). The main body 311a has a cylindrical shape. The top plate 311b is detachably disposed airtightly via a seal portion 311e with respect to the upper surface of the main body 311a. The side wall body 311c is connected to the lower surface of the main body 311a and has a cylindrical shape. The bottom plate 311d is disposed airtightly with respect to the bottom surface of the side wall body 311c.

[0013] The gas inlet 312 includes a raw material gas nozzle 312a, a reaction gas nozzle 312b, and separation gas nozzles 312c and 312d (Fig. 2). The raw material gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d are arranged above the rotary table 321 at intervals in the circumferential direction of the vacuum chamber 311 (the direction indicated by arrow A in Fig. 2). In the illustrated example, in the clockwise direction (the rotation direction of the rotary table 321) from the transfer port 314, the separation gas nozzle 312c, the raw material gas nozzle 312a, the separation gas nozzle 312d, and the reaction gas nozzle 312b are arranged in this order. The gas introduction ports 312a1, 312b1, 312c1, and 312d1 (Fig. 2), which are the base ends of the raw material gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d, are fixed to the outer wall of the main body 311a. The raw material gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d are introduced into the vacuum chamber 311 from the outer wall of the vacuum chamber 311 and are attached so as to extend horizontally with respect to the rotary table 321 along the radial direction of the main body 311a. The raw material gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d are formed of, for example, quartz.

[0014] The raw material gas nozzle 312a is connected to a supply source of raw material gas (not shown) via a pipe, a flow controller, etc. (not shown). As the raw material gas, for example, a silicon-containing gas or a metal-containing gas can be used. A plurality of discharge holes (not shown) that open toward the rotary table 321 are arranged at intervals along the length direction of the raw material gas nozzle 312a. The lower region of the raw material gas nozzle 312a becomes a raw material gas adsorption region P1 for adsorbing the raw material gas to the substrate W.

[0015] The reaction gas nozzle 312b is connected to a reaction gas supply source (not shown) via a pipe, a flow controller, etc. (not shown). As the reaction gas, for example, an oxidation gas or a nitriding gas can be used. The reaction gas nozzle 312b has a plurality of discharge holes (not shown) that open toward the rotary table 321, and they are arranged at intervals along the length direction of the reaction gas nozzle 312b. The lower region of the reaction gas nozzle 312b becomes a reaction gas supply region P2 that oxidizes or nitrides the source gas adsorbed on the substrate W in the source gas adsorption region P1.

[0016] The separation gas nozzles 312c and 312d are both connected to a separation gas supply source (not shown) via a pipe, a flow control valve, etc. (not shown). As the separation gas, for example, an inert gas such as argon (Ar) gas or nitrogen (N2) gas can be used. The separation gas nozzles 312c and 312d have a plurality of discharge holes (not shown) that open toward the rotary table 321, and they are arranged at intervals along the length direction of the separation gas nozzles 312c and 312d.

[0017] As shown in FIG. 2, two convex portions 317 are provided in the vacuum chamber 311. The convex portions 317 are attached to the back surface of the top plate 311b so as to protrude toward the rotary table 321 in order to constitute a separation region D together with the separation gas nozzles 312c and 312d. The convex portions 317 have a fan-shaped planar shape with the top being cut in an arc shape, the inner arc is connected to the protruding portion 318, and the outer arc is arranged along the inner wall of the main body 311a of the vacuum chamber 311.

[0018] The gas exhaust port 313 includes a first exhaust port 313a and a second exhaust port 313b (FIG. 2). The first exhaust port 313a is formed at the bottom of a first exhaust region E1 that communicates with the source gas adsorption region P1. The second exhaust port 313b is formed at the bottom of a second exhaust region E2 that communicates with the reaction gas supply region P2. The first exhaust port 313a and the second exhaust port 313b are connected to an exhaust device (not shown) via an exhaust pipe (not shown).

[0019] The transfer port 314 is provided on the side wall of the vacuum chamber 311 (FIG. 2). At the transfer port 314, the substrate W is transferred between the rotary table 321 inside the vacuum chamber 311 and the transfer arm 314a outside the vacuum chamber 311. The transfer port 314 is opened and closed by a gate valve (not shown).

[0020] The heating unit 315 includes a fixed shaft 315a, a heater support portion 315b, and a heater 315c (FIG. 1).

[0021] The fixed shaft 315a has a cylindrical shape with the center of the vacuum chamber 311 as the central axis. The fixed shaft 315a is provided inside the rotating shaft 323, penetrating the bottom plate 311d of the vacuum chamber 311. A seal portion 315d is provided between the outer wall of the fixed shaft 315a and the inner wall of the rotating shaft 323. Thereby, the rotating shaft 323 rotates with respect to the fixed shaft 315a while maintaining the airtight state inside the vacuum chamber 311. The seal portion 315d includes, for example, a magnetic fluid seal.

[0022] The heater support portion 315b is fixed to the upper part of the fixed shaft 315a and has a disk shape. The heater support portion 315b supports the heater 315c.

[0023] The heater 315c is provided on the upper surface of the heater support portion 315b. In addition to the upper surface of the heater support portion 315b, the heater 315c may be provided on the main body 311a. The heater 315c generates heat when power is supplied from a power source (not shown) and heats the substrate W.

[0024] The cooling unit 316 includes fluid flow paths 316a1 to 316a4, chiller units 316b1 to 316b4, inlet pipes 316c1 to 316c4, and outlet pipes 316d1 to 316d4. The fluid flow paths 316a1, 316a2, 316a3, 316a4 are formed inside the main body 311a, the top plate 311b, the bottom plate 311d, and the heater support portion 315b, respectively. The chiller units 316b1 to 316b4 output temperature-controlled fluid. The temperature-controlled fluid output from the chiller units 316b1 to 316b4 flows through the inlet pipes 316c1 to 316c4, the fluid flow paths 316a1 to 316a4, and the outlet pipes 316d1 to 316d4 in this order and circulates. Thereby, the temperatures of the main body 311a, the top plate 311b, the bottom plate 311d, and the heater support portion 315b are adjusted. As the temperature-controlled fluid, for example, water or a fluorine-based fluid such as Galden (registered trademark) can be used.

[0025] The rotational drive device 320 has a rotary table 321, a housing box 322, a rotating shaft 323, and a revolution motor 324.

[0026] The rotary table 321 is provided inside the vacuum container 311 and has a rotation center at the center of the vacuum container 311. The rotary table 321 has, for example, a disk shape and is formed of quartz. A plurality (for example, five) of mounting tables 321a are provided on the upper surface of the rotary table 321 along the rotation direction (circumferential direction). The rotary table 321 is connected to the housing box 322 via a connection portion 321d.

[0027] Each mounting table 321a has a disc shape slightly larger than the substrate W. Each mounting table 321a is formed of, for example, quartz. A recess R is formed on the upper surface of each mounting table 321a. The recess R has a circular shape in plan view. The substrate W is placed in the recess R. The recess R has an inner diameter slightly larger than the diameter of the substrate W. For this reason, there is a gap G between the inner surface of the recess R and the outer end of the substrate W. The recess R has a depth substantially equal to or greater than the thickness of the substrate W. Thereby, when the substrate W is placed in the recess R, the upper surface of the substrate W and the upper surface of the region of the mounting table 321a where the substrate W is not placed become the same height, or the upper surface of the substrate W becomes lower than the upper surface of the region of the mounting table 321a where the substrate W is not placed. Each mounting table 321a is connected to a rotation motor 321c via a rotation shaft 321b and is configured to be rotatable relative to the rotary table 321.

[0028] The rotation shaft 321b connects the lower surface of the mounting table 321a and the rotation motor 321c housed in the housing box 322, and transmits the power of the rotation motor 321c to the mounting table 321a. The rotation shaft 321b is configured to be rotatable about the center of the mounting table 321a as a rotation center. The rotation shaft 321b is provided at a position displaced in the radial direction from the center of the rotary table 321. The rotation shaft 321b is provided so as to penetrate the ceiling portion 322b of the housing box 322 and the rotary table 321. A seal portion 326c is provided in the through hole of the ceiling portion 322b of the housing box 322, and the airtight state inside the housing box 322 is maintained. The seal portion 326c includes, for example, a magnetic fluid seal.

[0029] The rotation motor 321c rotates the substrate W by rotating the mounting table 321a relative to the rotary table 321 via the rotation shaft 321b. The rotation motor 321c may be, for example, a servo motor.

[0030] The connecting portion 321d connects, for example, the lower surface of the rotary table 321 and the upper surface of the housing box 322. A plurality of connecting portions 321d are provided, for example, along the circumferential direction of the rotary table 321.

[0031] The storage box 322 is provided below the rotary table 321 in the vacuum chamber 311. The storage box 322 is connected to the rotary table 321 via the connection part 321d and is configured to be rotatable integrally with the rotary table 321. The storage box 322 may be configured to be movable up and down in the vacuum chamber 311 by a lifting mechanism (not shown). The storage box 322 has a main body part 322a and a ceiling part 322b.

[0032] The main body part 322a is formed in a concave shape in cross section and is formed in a ring shape along the rotation direction of the rotary table 321.

[0033] The ceiling part 322b is provided on the upper surface of the main body part 322a so as to cover the opening of the main body part 322a formed in a concave shape in cross section. Thereby, the main body part 322a and the ceiling part 322b form a storage part 322c isolated from the inside of the vacuum chamber 311.

[0034] The storage part 322c is formed in a rectangular shape in cross section and is formed in a ring shape along the rotation direction of the rotary table 321. The storage part 322c houses the rotation motor 321c. A communication path 322d that communicates the storage part 322c with the outside of the substrate processing apparatus 300 is formed in the main body part 322a. Thereby, the atmosphere is introduced into the storage part 322c from the outside of the substrate processing apparatus 300, the inside of the storage part 322c is cooled, and the inside of the storage part 322c is maintained at atmospheric pressure.

[0035] The rotating shaft 323 is fixed to the lower part of the storage box 322. The rotating shaft 323 is provided so as to penetrate the bottom plate 311d of the vacuum chamber 311. The rotating shaft 323 transmits the power of the revolution motor 324 to the rotary table 321 and the storage box 322, and rotates the rotary table 321 and the storage box 322 integrally. A seal part 311f is provided in the through hole of the bottom plate 311d of the vacuum chamber 311, and the airtight state inside the vacuum chamber 311 is maintained. The seal part 311f includes, for example, a magnetic fluid seal.

[0036] Inside the rotating shaft 323, a through hole 323a is formed. The through hole 323a is connected to the communication path 322d of the housing box 322 and functions as a fluid flow path for introducing air into the housing box 322. Further, the through hole 323a also functions as a wiring duct for introducing power lines and signal lines for driving the rotation motor 321c into the housing box 322. The through hole 323a is provided, for example, in the same number as the rotation motor 321c.

[0037] The control unit 390 controls each part of the substrate processing apparatus 300. The control unit 390 is, for example, a computer. The program of the computer that operates each part of the substrate processing apparatus 300 is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0038] The control unit 390 is configured to execute a film forming process for forming a film on the substrate W placed in the recess R while maintaining the rotating table 321 and the mounting table 321a in a state of rotating in opposite directions to each other.

[0039] For example, the control unit 390 rotates the rotating table 321 in the first rotation direction and rotates the mounting table 321a in the second rotation direction opposite to the first rotation direction. For example, the first rotation direction is clockwise and the second rotation direction is counterclockwise. The first rotation direction may be counterclockwise and the second rotation direction may be clockwise. The rotation speed of the rotating table 321 is, for example, equal to or higher than the speed at which the substrate W placed in the recess R moves relative to the recess R when the rotating table 321 is rotated. The rotation speed of the rotating table 321 is, for example, 40 rpm or higher and 120 rpm or lower. The rotation speed of the mounting table 321a may be slower than the rotation speed of the rotating table 321. The rotation speed of the mounting table 321a is, for example, 1 rpm or higher and 10 rpm or lower.

[0040] During, for example, the film formation process, the control unit 390 controls so as not to change the rotation direction of the rotary table 321 and the rotation direction of the mounting table 321a. For example, during the execution of the film formation process, the control unit 390 always controls to maintain the state where the rotary table 321 is rotated in the first rotation direction and the mounting table 321a is rotated in the second rotation direction.

[0041] During the film formation process, the control unit 390 may control to change the rotation direction of the rotary table 321 and the rotation direction of the mounting table 321a. For example, first, during the first period at the beginning of the film formation process, the control unit 390 rotates the rotary table 321 in the first rotation direction and executes the film formation process while maintaining the state where the mounting table 321a is rotated in the second rotation direction. Next, when the first period has elapsed, the control unit 390 switches the rotation direction of the rotary table 321 from the first rotation direction to the second rotation direction and switches the rotation direction of the mounting table 321a from the second rotation direction to the first rotation direction. Next, during the second period after the first period, the control unit 390 rotates the rotary table 321 in the second rotation direction and continues the film formation process while maintaining the state where the mounting table 321a is rotated in the first rotation direction. The control unit 390 ends the film formation process after the second period has elapsed. However, after the second period has elapsed, the control unit 390 may switch the rotation direction of the rotary table 321 and the rotation direction of the mounting table 321a again and continue the film formation process.

[0042] During the film formation process, the control unit 390 may control to change the rotation speed of at least one of the rotary table 321 and the mounting table 321a.

[0043] As described above, according to the substrate processing apparatus 300 according to the embodiment, the control unit 390 is configured to execute a film formation process of forming a film on the substrate W placed in the recess R while maintaining the state where the rotary table 321 and the mounting table 321a are rotated in opposite directions to each other. In this case, the impact of the collision between the inner surface of the recess R and the outer end of the substrate W can be mitigated. For this reason, generation of particles due to the collision can be suppressed. As a result, adhesion of particles onto the substrate W can be suppressed.

[0044] Referring to FIGS. 6 to 8, the mechanism for generating particles will be described. FIGS. 6 to 8 are diagrams showing the mechanism for generating particles.

[0045] FIGS. 6(a) to 6(h) show the case where the mounting table 321a is located at the 6 o'clock position of the rotary table 321. FIGS. 6(a) to 6(d) show the movement of the substrate W in the recess R when the rotary table 321 and the mounting table 321a are rotated in the same direction (hereinafter referred to as "forward rotation"). FIGS. 6(e) to 6(h) show the movement of the substrate W in the recess R when the rotary table 321 and the mounting table 321a are rotated in opposite directions (hereinafter referred to as "reverse rotation").

[0046] In the case of forward rotation, first, when the substrate W is conveyed to the recess R of the mounting table 321a, as shown in FIG. 6(a), the substrate W is placed at the center in the recess R. Next, when the rotary table 321 is rotated clockwise (the substrate W revolves clockwise) along the direction of arrow A11 in FIG. 6(b), a centrifugal force F11 in the direction away from the rotation center of the rotary table 321 acts on the substrate W. For this reason, the substrate W moves in the recess R toward the 6 o'clock position of the mounting table 321a, and the inner surface of the recess R and the outer end of the substrate W come into contact. Also, as shown by arrow A12 in FIG. 6(c), when the mounting table 321a is rotated clockwise (the substrate W rotates clockwise) in the same clockwise direction as the rotation direction of the rotary table 321, the contact position between the inner surface of the recess R and the outer end of the substrate W moves clockwise, for example, from the 6 o'clock position to the 10 o'clock position. At this time, as shown in FIG. 6(c), an inertial force F12 generated by the rotation of the rotary table 321 acts on the substrate W. For this reason, as shown in FIG. 6(c), a resultant force F13 of a component F11a of the centrifugal force F11 decomposed in the direction away from the inner surface of the recess R and the inertial force F12 acts on the substrate W. The direction of the resultant force F13 is the direction away from the inner surface of the recess R at the contact position between the inner surface of the recess R and the outer end of the substrate W. As a result, as shown in FIG. 6(d), the substrate W moves in the recess R by the resultant force F13, and the inner surface of the recess R and the outer end of the substrate W collide at, for example, the 5 o'clock position of the mounting table 321a. At this time, the impact of the collision becomes large.

[0047] In the case of reverse rotation, first, when the substrate W is conveyed to the recess R of the mounting table 321a, as shown in FIG. 6(e), the substrate W is placed at the center within the recess R. Next, when the rotary table 321 is rotated clockwise along the direction of arrow A21 in FIG. 6(f) (the substrate W revolves counterclockwise), a centrifugal force F21 in the direction away from the rotation center of the rotary table 321 acts on the substrate W. For this reason, the substrate W moves within the recess R in the 6 o'clock direction of the mounting table 321a, and the inner surface of the recess R and the outer end of the substrate W come into contact. Also, as shown by arrow A22 in FIG. 6(g), when the mounting table 321a is rotated counterclockwise in the direction opposite to the rotation direction of the rotary table 321, the contact position between the inner surface of the recess R and the outer end of the substrate W moves, for example, from the 6 o'clock direction to the 2 o'clock direction. At this time, as shown in FIG. 6(g), an inertial force F22 generated by the rotation of the rotary table 321 acts on the substrate W. For this reason, as shown in FIG. 6(g), a resultant force F23 of a component F21a of the centrifugal force F21 decomposed in the direction away from the inner surface of the recess R and the inertial force F22 acts on the substrate W. The direction of the resultant force F23 is along the inner surface of the recess R at the contact position between the inner surface of the recess R and the outer end of the substrate W. The magnitude of the resultant force F23 is smaller than the magnitude of the resultant force F13. As a result, as shown in FIG. 6(h), when the substrate W moves within the recess R by the resultant force F23, the impact of the collision between the inner surface of the recess R and the outer end of the substrate W can be mitigated.

[0048] FIGS. 7 and 8 are diagrams showing the forces acting on the substrate W placed on each mounting table 321a when six mounting tables 321a are provided along the rotation direction of the rotary table 321. FIG. 7 shows the case of forward rotation, and FIG. 8 shows the case of reverse rotation.

[0049] As shown in FIG. 7, the substrate W placed on the mounting tables 321a at the 0 o'clock direction, 2 o'clock direction, 4 o'clock direction, 8 o'clock direction, and 10 o'clock direction of the rotary table 321 is the same as the substrate W placed on the mounting table 321a at the 6 o'clock direction of the rotary table 321. That is, on the substrate W placed on the mounting tables 321a at the 0 o'clock direction, 2 o'clock direction, 4 o'clock direction, 8 o'clock direction, and 10 o'clock direction of the rotary table 321, a resultant force F13 acting in a direction away from the inner surface of the concave portion R acts at the contact position between the inner surface of the concave portion R and the outer end of the substrate W. Therefore, the substrate W moves inside the concave portion R due to the resultant force F13, and the inner surface of the concave portion R and the outer end of the substrate W collide. At this time, the impact of the collision becomes large.

[0050] As shown in FIG. 8, the substrate W placed on the mounting tables 321a at the 0 o'clock direction, 2 o'clock direction, 4 o'clock direction, 8 o'clock direction, and 10 o'clock direction of the rotary table 321 is the same as the substrate W placed on the mounting table 321a at the 6 o'clock direction of the rotary table 321. That is, on the substrate W placed on the mounting tables 321a at the 0 o'clock direction, 2 o'clock direction, 4 o'clock direction, 8 o'clock direction, and 10 o'clock direction of the rotary table 321, a resultant force F23 acting along the inner surface of the concave portion R acts at the contact position between the inner surface of the concave portion R and the outer end of the substrate W. The magnitude of the resultant force F23 is smaller than the magnitude of the resultant force F13. Therefore, when the substrate W moves inside the concave portion R due to the resultant force F23, the impact of the collision between the inner surface of the concave portion R and the outer end of the substrate W can be alleviated.

[0051] 〔Substrate Processing Method〕 Referring to FIG. 9, the substrate processing method according to the embodiment will be described. The substrate processing method according to the embodiment is performed, for example, by the control unit 390 controlling the operations of each part of the substrate processing apparatus 300. FIG. 9 is a flowchart showing the substrate processing method according to the embodiment. The substrate processing method shown in FIG. 9 includes steps S11 to S15.

[0052] In step S11, the control unit 390 executes a process of placing the substrate W in the recess R of each of the plurality of mounting tables 321a. Specifically, first, the revolution motor 324 rotates the rotary table 321 to move one of the plurality of mounting tables 321a to a position corresponding to the transfer port 314. Next, the control unit 390 opens the gate valve. Next, the transfer arm 314a places the substrate W in the recess R of the mounting table 321a located at the position corresponding to the transfer port 314. Next, the revolution motor 324 rotates the rotary table 321 to move another one of the plurality of mounting tables 321a to a position corresponding to the transfer port 314. Next, the transfer arm 314a places the substrate W in the recess R of the mounting table 321a located at the position corresponding to the transfer port 314. Similarly, the substrate W is placed in the recess R for the remaining ones of the plurality of mounting tables 321a.

[0053] Step S12 is performed after step S11. In step S12, the control unit 390 controls the revolution motor 324 and the rotation motor 321c to rotate the rotary table 321 and the mounting table 321a in opposite directions to each other. For example, the control unit 390 rotates the rotary table 321 in the first rotation direction and rotates the mounting table 321a in the second rotation direction opposite to the first rotation direction. The rotation speed of the rotary table 321 is, for example, 40 rpm or more and 120 rpm or less. The rotation speed of the mounting table 321a is, for example, 1 rpm or more and 10 rpm or less.

[0054] Step S13 is performed after step S12. In step S13, the control unit 390 controls the processing unit 310 to perform a film forming process on the substrate W. The control unit 390 supplies, for example, a raw material gas from the raw material gas nozzle 312a to the raw material gas adsorption region P1 and a reaction gas from the reaction gas nozzle 312b to the reaction gas supply region P2 while supplying a separation gas from the separation gas nozzles 312c and 312d to the separation region D. As a result, when the substrate W placed on the mounting table 321a of the rotary table 321 repeatedly passes through the raw material gas adsorption region P1 and the reaction gas supply region P2, a film is deposited on the surface of the substrate W by atomic layer deposition (ALD). After a film with a desired film thickness is deposited, the control unit 390 stops the supply of, for example, the separation gas from the separation gas nozzles 312c and 312d, the supply of the raw material gas from the raw material gas nozzle 312a, and the supply of the reaction gas from the reaction gas nozzle 312b.

[0055] In step S13, the control unit 390 controls, for example, not to change the rotation direction of the rotary table 321 and the rotation direction of the mounting table 321a during the film forming process. For example, the control unit 390 controls to always maintain a state in which the rotary table 321 is rotated in the first rotation direction and the mounting table 321a is rotated in the second rotation direction during the execution of the film forming process.

[0056] In step S13, the control unit 390 may control to change the rotation direction of the rotary table 321 and the rotation direction of the mounting table 321a during the film formation process. For example, first, in the first period at the beginning of the film formation process, the control unit 390 rotates the rotary table 321 in the first rotation direction and maintains the state of rotating the mounting table 321a in the second rotation direction while executing the film formation process. Next, when the first period has elapsed, the control unit 390 switches the rotation direction of the rotary table 321 from the first rotation direction to the second rotation direction and switches the rotation direction of the mounting table 321a from the second rotation direction to the first rotation direction. Next, in the second period after the first period, the control unit 390 rotates the rotary table 321 in the second rotation direction and continues the film formation process while maintaining the state of rotating the mounting table 321a in the first rotation direction. The control unit 390 ends the film formation process after the second period has elapsed. However, the control unit 390 may switch the rotation direction of the rotary table 321 and the rotation direction of the mounting table 321a again after the second period has elapsed and continue the film formation process.

[0057] In step S13, the control unit 390 may control to change the rotation speed of at least one of the rotary table 321 and the mounting table 321a during the film formation process.

[0058] Step S14 is performed after step S13. In step S14, the control unit 390 controls the revolution motor 324 and the rotation motor 321c to stop the rotation of the rotary table 321 and the mounting table 321a.

[0059] Step S15 is performed after step S14. In step S15, the control unit 390 executes a process of unloading the substrate W from the recesses R of each of the plurality of mounting tables 321a. Specifically, first, the revolution motor 324 rotates the rotary table 321 to move one of the plurality of mounting tables 321a to a position corresponding to the transfer port 314. Next, the rotation motor 321c rotates the mounting table 321a that has moved to the position corresponding to the transfer port 314, and rotates the substrate W placed on the mounting table 321a to position the substrate W in the rotational direction. Next, the control unit 390 opens the gate valve. Next, the transfer arm 314a unloads the substrate W placed in the recess R of the mounting table 321a at the position corresponding to the transfer port 314. Next, the revolution motor 324 rotates the rotary table 321 to move another one of the plurality of mounting tables 321a to a position corresponding to the transfer port 314. Next, the rotation motor 321c rotates the mounting table 321a that has moved to the position corresponding to the transfer port 314, and rotates the substrate W placed on the mounting table 321a to position the substrate W in the rotational direction. Next, the transfer arm 314a unloads the substrate W placed in the recess R of the mounting table 321a at the position corresponding to the transfer port 314. Similarly, for the remaining ones of the plurality of mounting tables 321a, the substrate W placed in the recess R is unloaded.

[0060] As described above, according to the substrate processing method according to the embodiment, the control unit 390 is configured to execute a film forming process of forming a film on the substrate W placed in the recess R while maintaining a state in which the rotary table 321 and the mounting table 321a rotate in opposite directions to each other. In this case, the impact of the collision between the inner surface of the recess R and the outer end of the substrate W can be mitigated. Therefore, the generation of particles due to the collision can be suppressed. As a result, the adhesion of particles onto the substrate W can be suppressed.

[0061] 〔Example〕 In the example, the substrate processing method according to the embodiment was implemented using the substrate processing apparatus 300. In the example, while maintaining a state in which the rotary table 321 and the mounting table 321a were rotated in opposite directions to each other, a film forming process for forming a film on the substrate W placed in the concave portion R was executed. Specifically, the rotation direction of the rotary table 321 was clockwise, and the rotation direction of the mounting table 321a was counterclockwise.

[0062] As a comparative example, using the substrate processing apparatus 300, while maintaining a state in which the rotary table 321 and the mounting table 321a were rotated in the same direction as each other, a film forming process for forming a film on the substrate W placed in the concave portion R was executed. Specifically, the rotation direction of the rotary table 321 was clockwise, and the rotation direction of the mounting table 321a was clockwise. Except for the point of viewing the rotary table 321 and the mounting table 321a in the same direction as each other, it was the same as in the example.

[0063] Next, for each of the example and the comparative example, the number of particles attached to the substrate W after the film forming process was evaluated.

[0064] FIG. 10 is a diagram showing the results of measuring the number of particles. In FIG. 10, the left bar graph shows the number of particles [pieces] in the comparative example, and the right bar graph shows the number of particles [pieces] in the example.

[0065] As shown in FIG. 10, in the comparative example, the number of particles was 249, whereas in the example, the number of particles was 21. From this result, it was shown that by executing a film forming process for forming a film on the substrate W placed in the concave portion R while maintaining a state in which the rotary table 321 and the mounting table 321a were rotated in opposite directions to each other, the adhesion of particles onto the substrate W can be suppressed.

[0066] It should be considered that all aspects of the embodiments disclosed this time are illustrative and not restrictive. The above embodiments may be omitted, substituted, or changed in various forms without departing from the scope and spirit of the appended claims.

[0067] In the above embodiment, the case where five mounting tables 321a are provided on the rotary table 321 has been described, but the present disclosure is not limited thereto. For example, the number of mounting tables 321a may be four or less, or six or more.

[0068] In the above embodiment, the case where the processing unit 310 includes the vacuum chamber 311, the gas inlet 312, the gas outlet 313, the transfer port 314, the heating unit 315, and the cooling unit 316 has been described, but the present disclosure is not limited thereto. For example, the processing unit 310 may further include a plasma generation unit that generates plasma for activating various gases supplied into the vacuum chamber 311.

Explanation of Reference Numerals

[0069] 300 Substrate processing apparatus 311 Vacuum chamber 321 Rotary table 321a Mounting table 390 Control unit R Recess W Substrate

Claims

1. A vacuum chamber, a rotary table provided within the vacuum chamber, a mounting stage that is rotatable relative to the rotary table and has a recess on which a substrate is placed, a control unit, and comprising: the rotation axis of the mounting stage is provided at a position radially offset from the center of the rotary table, the control unit executes a process of forming a film on the substrate placed in the recess while maintaining a state in which the rotary table and the mounting stage are rotated in opposite directions to each other, a substrate processing apparatus.

2. The recess has an inner diameter larger than the diameter of the substrate, the substrate processing apparatus according to Claim 1.

3. The rotation speed of the rotary table is a speed at which the substrate placed in the recess moves relative to the recess when the rotary table is rotated, the substrate processing apparatus according to Claim 1.

4. The rotation speed of the mounting stage is slower than the rotation speed of the rotary table, the substrate processing apparatus according to Claim 1.

5. A plurality of the mounting stages are provided along the circumferential direction of the rotary table, the substrate processing apparatus according to Claim 1.

6. During the process, the control unit does not change the rotation directions of the rotary table and the mounting stage, the substrate processing apparatus according to any one of Claims 1 to 5.

7. During the process, the control unit changes the rotation directions of the rotary table and the mounting stage, the substrate processing apparatus according to any one of Claims 1 to 5.

8. During the process, the control unit changes the rotation speed of the mounting stage, the substrate processing apparatus according to any one of Claims 1 to 5.

9. A substrate processing method using the substrate processing apparatus, wherein the substrate processing apparatus comprises a vacuum chamber, a rotary table provided within the vacuum chamber, a mounting stage that is rotatable relative to the rotary table and has a recess on which a substrate is placed, and comprising: while maintaining a state in which the rotary table and the mounting stage are rotated in opposite directions to each other, a process of forming a film on the substrate placed in the recess is executed, a substrate processing method.

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