All-crystal resonator and method for manufacturing the same

Abstract

To provide an all-crystal resonator and a method for manufacturing the same.SOLUTION: An all-crystal resonator includes: a crystal package cover; a resonance body; and a crystal base. The resonator body is connected to one side of the crystal package cover. The quartz base is connected to a side of the resonator body opposite to the quartz package cover, and includes a quartz substrate, an insulating layer, and a conductive structure. The insulating layer is provided on a side of the quartz crystal substrate opposite to the resonance body, and has a first conduction hole penetrating through itself, and the first conduction hole has a conductive material. The conductive structure is provided on the insulating layer, and is electrically connected to the resonance body through the first conduction hole and the quartz crystal substrate. Compared with the prior art, the all-crystal resonator according to the present application adopts a package cover and a base made of all-crystal, has a better sealing effect, and a better resonance effect. In the all-crystal resonator of the present application, by providing the insulating layer having the buffering action, an influence of a stress such as a mechanical vibration and an impact generated outside on the resonance main body is alleviated.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] This application relates to the field of all-crystal oscillator technology, and particularly to all-crystal oscillators and their manufacturing methods.

Background Art

[0002] A crystal oscillator is a quartz crystal oscillator made of quartz material, commonly known as crystal oscillation. When this quartz crystal sheet is subjected to the action of an applied alternating electric field, it generates mechanical vibration, and when the frequency of the alternating electric field is the same as the natural frequency of the quartz crystal, the vibration becomes stronger. This is a reaction of the crystal resonance characteristic. Utilizing this characteristic, a quartz resonator can be used instead of an LC (coil and capacitor) resonance circuit, filter, etc. Quartz resonators have advantages such as being small, lightweight, highly reliable, and having high frequency stability, so they are applied to household appliances and communication devices. Since crystal oscillators have extremely high frequency stability, they are mainly used as resonance elements in oscillation circuits where a very stable frequency is required.

[0003] Due to stress causing changes in the characteristics of crystal oscillators and affecting their performance, it is necessary to enhance the resistance of crystal oscillators to stress. Currently, all crystal oscillators on the market are formed using a ceramic base and a metal package, and the formed airtight structure is used to protect the crystal oscillator with piezoelectric effect in combination with a base having a certain resistance. Its stress resistance depends on the ceramic base. And the manufacturing production of crystal oscillators depends on the ceramic base, using a flexible conductive silver paste to achieve circuit conduction and combining solid crystals to reduce the influence of stress on the crystal oscillator. This has led to the weak ability of crystal oscillators to resist stress, low production efficiency, and high production costs.

Summary of the Invention

Problems to be Solved by the Invention

[0004] The object of the present invention is to provide an all-crystal oscillator with high stress resistance, high reliability, and low cost, and its manufacturing method.

Means for Solving the Problem

[0005] All crystal oscillators according to the first aspect of the present invention a crystal package cover, a resonance body connected to one side of the crystal package cover, a crystal base including a crystal substrate, an insulating layer, and a conductive structure, which is connected to the opposite side of the resonance body from the crystal package cover, and the insulating layer is provided on the opposite side of the crystal substrate from the resonance body, the insulating layer has a first through hole penetrating itself, the first through hole has a conductive material therein, the conductive structure is provided on the insulating layer, and is electrically connected to the resonance body through the first through hole and the crystal substrate.

[0006] Furthermore, in some embodiments, the resonance body includes a frame having an accommodation space, a crystal support portion located in the accommodation space and connected to the frame, and a conductive layer provided on the crystal support portion. One side of the frame is connected to be sealed with the crystal package cover, the crystal substrate is connected to be sealed on the opposite side of the frame from the crystal package cover so that the crystal support portion is sealed in the accommodation space, the conductive layer is electrically connected to the conductive structure through the crystal base and the first through hole.

[0007] Furthermore, in some embodiments, the conductive layer includes a first portion provided on the surface of the crystal support portion and the side of the frame close to the crystal package cover, and a second portion provided on the surface of the crystal support portion and the side of the frame close to the crystal base. The frame has a second through hole, the crystal base has two third through holes, the second through hole has a conductive material therein, the third through hole has a conductive material therein, the conductive structure includes a first conductive terminal and a second conductive terminal, and the number of the first through holes is two. The first part is electrically connected to the first conductive terminal through the second via hole, one of the third via holes, and one of the first via holes. The second part is electrically connected to the second conductive terminal through the other third via hole and the other first via hole.

[0008] Furthermore, in some embodiments, there is a gap groove between the crystal support portion and the frame, and the gap groove is formed by an etching process.

[0009] Furthermore, in some embodiments, the crystal package cover, the frame, the crystal support portion, and the crystal base all use quartz crystals.

[0010] Furthermore, in some embodiments, the insulating layer is formed on the crystal substrate by a semiconductor deposition process, the first via hole is formed in the insulating layer by an etching process, and the conductive material in the first via hole and the conductive structure are formed by semiconductor deposition and etching processes.

[0011] In a second aspect of the present invention, a method for manufacturing an all-crystal oscillator is provided. The method for manufacturing the all-crystal oscillator includes the steps of preparing a crystal package cover mother sheet having a plurality of first regions, providing one crystal package cover in each of the first regions, and connecting the crystal package covers of the plurality of first regions to each other; fabricating a resonance body mother sheet having a plurality of second regions, providing one resonance body in each of the second regions, and connecting the resonance bodies of the plurality of second regions to each other; fabricating a crystal base mother sheet having a plurality of third regions, providing one crystal base in each of the third regions, connecting the crystal bases of the plurality of third regions to each other, and making each crystal base include a crystal substrate, an insulating layer, and a conductive structure, forming a first via hole penetrating the insulating layer itself, forming a conductive material in the first via hole, and installing the conductive structure on the insulating layer and electrically connecting it to the conductive material in the first via hole. Connecting the crystal package cover mother sheet, the resonance body mother sheet, and the crystal base mother sheet in sequence to form a package mother sheet so as to seal them, and making the first region, the second region, and the third region correspond one-to-one. Further, enabling the conductive structure to be electrically connected to the resonance body through the conductive material of the first via hole and the crystal base. Cutting the package mother sheet to obtain a plurality of all-crystal oscillators each including one crystal base, one resonance body, and one crystal package cover.

[0012] Furthermore, in some embodiments, the step of fabricating the resonance body mother sheet includes providing a first wafer and processing the first wafer to form a frame and a crystal support for each resonance body. The frame has an accommodation space, the crystal support is located in the accommodation space and connected to the frame, and the step of forming a conductive layer on the frame and the crystal support is included.

[0013] Furthermore, in some embodiments, the step of fabricating the crystal base mother sheet preparing a second wafer and forming the insulating layer on the second wafer by a semiconductor deposition process, forming the first via hole in the insulating layer, depositing a conductive material in the first via hole and forming a conductive material layer on the insulating layer, and removing a part of the conductive material layer to form the conductive structure.

[0014] Furthermore, in some embodiments, the conductive layer includes a first portion provided on the surface of the crystal support and the frame close to the crystal package cover, and a second portion provided on the surface of the crystal support and the frame close to the crystal base. The frame has a second through hole, the crystal base has two third through holes, the second through hole has a conductive material, the third through hole has a conductive material, the conductive structure includes a first conductive terminal and a second conductive terminal, and the number of the first through holes is two. The first portion is electrically connected to the first conductive terminal through the second through hole, one of the third through holes, and one of the first through holes. The second portion is electrically connected to the second conductive terminal through the other third through hole and the other first through hole. The crystal package cover, the frame, the crystal support portion, and the crystal base all use quartz crystal.

Advantages of the Invention

[0015] In the all-crystal oscillator and its manufacturing method provided by the embodiments of the present application, compared with the prior art, a crystal package cover and a crystal base are adopted, so that the all-crystal oscillator can be better combined during package sealing, the sealing effect is better, and the effect is more excellent. At the same time, an insulating layer is provided between the crystal substrate and the conductive structure. When subjected to an external stress action, the stress received by the insulating layer is weakened and then transmitted to the crystal substrate. The weakened stress is further weakened when transmitted to the resonance body through the crystal substrate, plays a role in protecting the resonance body, and enhances the ability of the all-crystal oscillator to resist stress. Thereby, the characteristics of the all-crystal oscillator are well protected, and the change of the characteristics of the all-crystal oscillator is prevented. Next, by providing a frame and a support portion therein for the resonance body, the influence of stress can be further weakened when the stress reaches the resonance body, so that the all-crystal oscillator can have better characteristics against mechanical vibration and impact stress. In addition, the manufacturing method of the all-crystal oscillator provided by the present application can utilize the characteristics of the sheet-like structure of the all-crystal oscillator to process the structures of each layer independently during manufacturing, and then seal them sequentially to form a package mother sheet, and cut them collectively, realizing the single production and manufacturing of each component of the product. Compared with the existing manufacturing process, the production efficiency is significantly improved, and the production cost is reduced.

[0016] To more clearly explain the technical aspects in the embodiments of this application or related technologies, the drawings necessary for use in the embodiments or related technology descriptions will be briefly described below. Obviously, the drawings in the following description are only for explaining the embodiments of this application, and for those of ordinary skill in the technical field, other drawings can be obtained based on the provided drawings without creative labor.

Brief Description of the Drawings

[0017]

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Embodiments for Carrying Out the Invention

[0018] To facilitate the understanding of the present application, the present application will be described in more detail below with reference to the relevant drawings. The drawings show preferred embodiments of the present application. However, the present application is not limited to the embodiments described in this specification and can be implemented in many different forms. Conversely, the purpose of providing these embodiments is to more fully understand the disclosure content of the present application.

[0019] In addition, when a component is referred to as being "fixed to" another component, it may be directly present on the other component or an intermediate medium may exist. When a component is considered to be "connected to" another component, it may be directly connected to the other component or an intermediate component may be present simultaneously. The terms "inside", "outside", "left", "right" and similar expressions used in this specification are for illustrative purposes only and do not mean the only embodiment.

[0020] Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by those skilled in the technical field to which the present application belongs. The terms used in this specification are only for the purpose of explaining specific embodiments and are not intended to limit the present application. The term "and / or" used in this specification includes any and all combinations of one or more of the related listed items.

[0021] Refer to FIGS. 1, 2 and 3. FIG. 1 is a schematic perspective view of the entire crystal oscillator 100 provided according to an embodiment of the present application. FIG. 2 is an exploded perspective schematic view of the entire crystal oscillator 100 provided according to an embodiment of the present application. FIG. 3 is an exploded perspective schematic view of the entire crystal oscillator 100 from another angle provided according to an embodiment of the present application. The entire crystal oscillator 100 according to an embodiment of the present application includes a crystal package cover 10, a resonance body 20, and a crystal base 30. Here, the resonance body 20 is connected to one side of the crystal package cover 10. The crystal base 30 is connected to the side of the resonance body 20 opposite to the crystal package cover 10 and includes a crystal substrate 31, an insulating layer 32, and a conductive structure 33. The insulating layer 32 is provided on the side of the crystal substrate 31 opposite to the resonance body 20. The insulating layer 32 has a first via hole 321 that penetrates itself. The first via hole 321 contains a conductive material. The conductive structure 33 is provided on the insulating layer 32 and is electrically connected to the resonance body 20 through the first via hole 321 and the crystal base 30.

[0022] Specifically, in this embodiment, the insulating layer 32 is a resin material. As can be understood, by adopting the entire crystal package cover and base, the product can be well combined during packaging and sealing, the sealing effect is better, and the resonance effect is more excellent. When using a resin material as the insulating layer 32 and utilizing the characteristics of the resin itself, the insulating layer 32 is provided with a buffering effect, which mitigates the influence of stress caused by mechanical vibration and impact generated externally on the resonance body 20, and is very convenient when connecting and fixing the crystal substrate 31 and the conductive structure 33, which is convenient for production and manufacturing. In addition, it can also block heat generated by the conductive structure 33, etc., and can reduce the probability that the entire crystal oscillator 100 is affected by external stress and causes characteristic changes.

[0023] For ease of understanding, refer to FIGS. 4 and 5 together. FIG. 4 is a schematic cross-sectional view along the IV-IV line of the entire crystal oscillator 100 shown in FIG. 1. FIG. 5 is a schematic cross-sectional view along the V-V line of the entire crystal oscillator 100 shown in FIG. 1. In this embodiment, the resonance body 20 includes a frame 21 having an accommodation space 211, a crystal support portion 22 located in the accommodation space 211 and connected to the frame 21, and a conductive layer 23 provided on the crystal support portion 22. One side of the frame 21 is connected to be sealed with the crystal package cover 10. The crystal substrate 31 is connected to be sealed on the side opposite to the crystal package cover 10 of the frame 21 so that the crystal support portion 22 is sealed in the accommodation space 211. The conductive layer 23 is electrically connected to the conductive structure 33 through the crystal base 30 and the first via hole 321. By providing the frame 21 and the support portion, not only can the characteristics of the resonance body 20 be better embodied, but also the action of external stress on the resonance body 20 can be further alleviated. Thereby, the resistance of the entire crystal oscillator 100 to stress can be increased, and the entire crystal oscillator 100 can be further protected.

[0024] Specifically, the conductive layer 23 includes a first portion 231 provided on the surfaces of the crystal support portion 22 and the frame 21 on the side of the crystal package cover 10, and a second portion 232 provided on the surfaces of the crystal support portion 22 and the frame 21 on the side of the crystal base 30. The frame 21 has a second via hole 212. The crystal base 30 has two third via holes 34. The second via hole 212 has a conductive material. The third via hole 34 has a conductive material. The conductive structure 33 includes a first conductive terminal 331 and a second conductive terminal 332. The number of the first via holes 321 is two. The first portion 231 is electrically connected to the first conductive terminal 331 through the second via hole 212, one third via hole 34, and one first via hole 321. The second portion 232 is electrically connected to the second conductive terminal 332 through the other third via hole 34 and the other first via hole 321. Filling the through holes with a conductive material to conduct electricity can increase the sealing performance of the entire crystal oscillator 100, ensure a strict seal inside the entire crystal oscillator 100, and have better airtightness.

[0025] Continue to refer to FIGS. 2 and 3. There is a gap groove formed by an etching process between the crystal support portion 22 and the frame 21. By providing a gap, the frame 21 can further play a role of protecting the crystal support portion 22.

[0026] Specifically, the crystal package cover 10, the frame 21, the crystal support portion 22, and the crystal base 30 all use quartz crystals. The insulating layer 32 is formed on the crystal substrate 31 by a semiconductor deposition process. The first via hole 321 is formed on the insulating layer 32 by an etching process. The conductive material and the conductive structure 33 in the first via hole 321 are formed by semiconductor deposition and etching processes.

[0027] Refer to FIG. 6. FIG. 6 is a flowchart of a manufacturing method of the entire crystal oscillator 100 provided according to an embodiment of the present application. The three parts of the entire crystal oscillator 100 described in the present application can all be manufactured independently. As shown in FIG. 7, FIG. 7 schematically shows a crystal package cover mother sheet 1, a resonance body mother sheet 2, and a crystal base mother sheet 3 used in the manufacturing method of the entire crystal oscillator 100. The sizes of these three types of mother sheets are the same.

[0028] The manufacturing method of the entire crystal oscillator 100 provided in the present application includes the following steps. In S1, a crystal package cover mother sheet 1 having a plurality of first regions 1a is prepared. Each first region 1a has one crystal package cover 10, and the crystal package covers 10 of the plurality of first regions 1a are connected to each other. Here, the crystal package cover mother sheet 1 is as shown in FIG. 7. Refer to FIG. 8 together. FIG. 8 shows that a plurality of groups of crystal package covers 10 are designed and provided in the crystal package cover mother sheet 1 so as to enable large-scale manufacturing when manufacturing the crystal package cover 10.

[0029] In S2, a resonant body mother sheet 2 having a plurality of second regions 2a is fabricated. Each second region 2a has one resonant body 20, and the resonant bodies 20 of the plurality of second regions 2a are connected to each other. Here, the resonant body mother sheet 2 is as shown in FIG. 7. Refer to FIGS. 9 and 10 together. FIGS. 9 and 10 respectively show the states of designing a plurality of groups of resonant bodies 20 in the resonant body mother sheet 2. The plurality of groups of resonant bodies 20 are designed on one resonant body mother sheet 2, realizing large-scale production and manufacturing. Of course, each group of resonant bodies 20 in the resonant body mother sheet 2 corresponds one-to-one to the positions and sizes of each group of crystal package covers 10 in the crystal package cover mother sheet 1, that is, each second region 2a corresponds to each first region 1a.

[0030] Specifically, in the step of S2, a first wafer is provided, and the first wafer is processed to form a frame 21 and a crystal support portion 22 for each resonant body 20, and a conductive layer 23 is formed on the frame 21 and the crystal support portion 22. The aforementioned frame 21 has an accommodation space 211. The aforementioned crystal support portion 22 is located in the accommodation space 211 and is connected to the frame 21.

[0031] In S3, a crystal base mother sheet 3 having a plurality of third regions 3a is fabricated. Each third region 3a has one crystal base 30, and the crystal bases 30 of the plurality of third regions 3a are connected. Each crystal base 30 includes a crystal substrate 31, an insulating layer 32, and a conductive structure 33. The insulating layer 32 has a first via hole 321 penetrating itself, and the first via hole 321 has a conductive material therein. The aforementioned conductive structure 33 is provided on the insulating layer 32 and is electrically connected to the conductive material in the first via hole 321.

[0032] Here, the crystal base mother sheet 3 is as shown in FIG. 7. Refer to FIGS. 11 and 12 together. As shown in FIG. 11, a plurality of groups of crystal substrates 31 are formed on one side of the crystal base mother sheet 3, and a plurality of groups of insulating layers 32 and conductive structures 33 are provided at corresponding positions on the other side of the crystal base mother sheet 3. The number and size of the crystal substrates 31, insulating layers 32, and conductive structures 33 of the crystal base mother sheet 3 all correspond one-to-one to the number and size of the crystal package covers 10 and resonance bodies 20.

[0033] Specifically, the step of S3 further includes preparing a second wafer, forming an insulating layer 32 on the second wafer by a semiconductor deposition process, forming a first via hole 321 in the insulating layer 32, depositing a conductive material in the first via hole 321, forming a conductive material layer in the insulating layer 32, and removing a part of the conductive material layer to form the conductive structure 33.

[0034] In S4, as shown in FIG. 13, the crystal package cover mother sheet 1, the resonance body mother sheet 2, and the crystal base mother sheet 3 are connected in sequence to be sealed to form a package mother sheet 4, and the first region 1a, the second region 2a, and the third region 3a are made to correspond one-to-one. Further, the conductive structure 33 is electrically connected to the resonance body 20 through the conductive material of the first via hole 321 and the crystal base 30.

[0035] In S5, the package mother sheet 4 is cut to obtain a plurality of all-crystal oscillators 100. Here, each all-crystal oscillator 100 includes one crystal base 30, one resonance body 20, and one crystal package cover 10.

[0036] The conductive layer 23 of the all-crystal oscillator 100 manufactured by the above process steps includes a first portion 231 provided on the surface on the crystal package cover 10 side in the crystal support portion 22 and the frame 21, and a second portion 232 provided on the surface on the crystal base 30 side in the crystal support portion 22 and the frame 21. The frame 21 has a second through hole 212. The crystal base 30 has two third through holes 34. There is a conductive material in the second through hole 212. There is a conductive material in the third through hole 34. The conductive structure 33 includes a first conductive terminal 331 and a second conductive terminal 332. The number of the first through holes 321 is two. The first portion 231 is electrically connected to the first conductive terminal 331 through the second through hole 212, one of the third through holes 34, and one of the first through holes 321. The second portion 232 is electrically connected to the second conductive terminal 332 through the other third through hole 34 and the other first through hole 321. The crystal package cover 10, the frame 21, the crystal support portion 22, and the crystal base 30 all use quartz crystals.

[0037] In the all-crystal oscillator 100 and its manufacturing method according to the embodiment of the present application, compared with the prior art, by adopting the crystal package cover 10 and the crystal base 30, the all-crystal oscillator 100 can be better coupled during package sealing, the sealing effect is better, and the effect is more excellent. At the same time, an insulating layer 32 is provided between the crystal substrate 31 and the conductive structure 33, and when an external stress is received, the received stress is weakened through the insulating layer 32 and then transmitted to the crystal substrate 31. The weakened stress is further weakened when it enters the resonance body 20 through the crystal substrate 31, bringing a protective effect to the resonance body 20, strengthening the ability of the all-crystal oscillator 100 to resist stress, thereby protecting the characteristics of the all-crystal oscillator 100 well and preventing the characteristics of the all-crystal oscillator 100 from changing. Next, by providing a frame 21 and a support portion therein in the resonance body 20, the influence of the stress can be further weakened when the stress reaches the resonance body 20, so that the all-crystal oscillator 100 can have better characteristics against mechanical vibration and impact stress. In addition, the manufacturing method of the all-crystal oscillator 100 provided by the present application can utilize the characteristics of the sheet-like structure of the all-crystal oscillator 100 to process the structures of each layer independently during manufacturing, and then seal them sequentially to form a package mother sheet, cut them collectively, realize the single production and manufacturing of each component of the product, and compared with the existing manufacturing process, the production efficiency is significantly improved and the production cost is reduced.

[0038] The above-described technical features of the embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described, but as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification. The above-described embodiments only represent some embodiments of the present application, and the description thereof is more specific and detailed, but it cannot limit the scope of the claims of the present application. It should be pointed out that those skilled in the art can make some deformations and improvements without departing from the spirit of the present application, and all of these deformations or improvements belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims

1. A fully crystal oscillator, comprising: a crystal package cover; a resonance body connected to one side of the crystal package cover; a crystal base connected to the side of the resonance body opposite to the crystal package cover, the crystal base including a crystal substrate, an insulating layer, and a conductive structure; the insulating layer is provided on the side of the crystal substrate opposite to the resonance body, has a first through hole penetrating itself, and has a conductive material in the first through hole; the conductive structure is provided on the insulating layer and is electrically connected to the resonance body through the first through hole and the crystal substrate; characterized by the above.

2. The resonance body includes a frame having an accommodation space, a crystal support portion located in the accommodation space and connected to the frame, and a conductive layer provided on the crystal support portion; one side of the frame is connected to the crystal package cover in a sealed manner; the crystal substrate is connected to the side of the frame opposite to the crystal package cover in a sealed manner so that the crystal support portion is sealed in the accommodation space; the conductive layer is electrically connected to the conductive structure through the crystal base and the first through hole; characterized by the above, according to Claim 1.

3. The conductive layer includes a first portion provided on the surface of the crystal support portion and the frame on the crystal package cover side, and a second portion provided on the surface of the crystal support portion and the frame on the crystal base side; the frame has a second through hole, the crystal base has two third through holes, the second through hole has a conductive material, the third through hole has a conductive material, the conductive structure includes a first conductive terminal and a second conductive terminal, and the number of the first through holes is two; the first portion is electrically connected to the first conductive terminal through the second through hole, one of the third through holes, and one of the first through holes; the second portion is electrically connected to the second conductive terminal through the other third through hole and the other first through hole; characterized by the above, according to Claim 2.

4. There is a gap groove between the crystal support portion and the frame, and the gap groove is formed by an etching process; characterized by the above, according to Claim 2.

5. The crystal package cover, the frame, the crystal support portion, and the crystal base are all made of quartz crystal. The all-crystal oscillator according to claim 2, characterized in that.

6. The insulating layer is formed on the crystal substrate by a semiconductor deposition process. The first vias are formed in the insulating layer by an etching process. The conductive material in the first vias and the conductive structure are formed by semiconductor deposition and etching processes. The all-crystal oscillator according to claim 1, characterized in that.

7. A method for manufacturing an all-crystal oscillator, comprising: Preparing a crystal package cover mother sheet having a plurality of first regions, providing one crystal package cover in each of the first regions, and connecting the crystal package covers in the plurality of first regions to each other; Fabricating a resonance body mother sheet having a plurality of second regions, providing one resonance body in each of the second regions, and connecting the resonance bodies in the plurality of second regions to each other; Fabricating a crystal base mother sheet having a plurality of third regions, providing one crystal base in each of the third regions, connecting the crystal bases in the plurality of third regions to each other, and making each crystal base include a crystal substrate, an insulating layer, and a conductive structure, wherein the insulating layer has a first via penetrating itself, forming a conductive material in the first via, installing the conductive structure on the insulating layer, and electrically connecting it to the conductive material in the first via; Connecting the crystal package cover mother sheet, the resonance body mother sheet, and the crystal base mother sheet in sequence to be sealed to form a package mother sheet, and making the first region, the second region, and the third region correspond one-to-one, and further enabling the conductive structure to be electrically connected to the resonance body through the conductive material in the first via and the crystal base; Cutting the package mother sheet to obtain a plurality of all-crystal oscillators each including one crystal base, one resonance body, and one crystal package cover. A method for manufacturing an all-crystal oscillator, characterized in that.

8. The step of manufacturing the resonance body mother sheet includes providing a first wafer and processing the first wafer to form a frame and a crystal support part for each resonance body. The frame has an accommodation space, the crystal support part is located in the accommodation space and connected to the frame, and the step of forming a conductive layer on the frame and the crystal support part. The method for manufacturing an all-crystal oscillator according to claim 7, characterized in that.

9. The step of manufacturing the crystal base mother sheet includes: preparing a second wafer and forming the insulating layer on the second wafer by a semiconductor deposition process, forming the first via hole in the insulating layer, depositing a conductive material in the first via hole and forming a conductive material layer on the insulating layer, and removing a part of the conductive material layer to form the conductive structure. The method for manufacturing an all-crystal oscillator according to claim 8, characterized in that.

10. The conductive layer includes a first portion provided on the surface on the crystal package cover side in the crystal support part and the frame, and a second portion provided on the surface on the crystal base side in the crystal support part and the frame. The frame has a second via hole, the crystal base has two third via holes, the second via hole has a conductive material, the third via hole has a conductive material, the conductive structure includes a first conductive terminal and a second conductive terminal, the number of the first via holes is two, the first portion is electrically connected to the first conductive terminal through the second via hole, one of the third via holes and one of the first via holes, the second portion is electrically connected to the second conductive terminal through the other third via hole and the other first via hole, the crystal package cover, the frame, the crystal support part and the crystal base are all made of quartz crystal. The method for manufacturing an all-crystal oscillator according to claim 9, characterized in that.

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