Semiconductor laser device

Abstract

To provide a semiconductor laser device capable of reducing an inductance component.SOLUTION: A semiconductor laser device A2 includes: a semiconductor laser element 4; a switching element 5; a second conductive part 312 in which the switching element 5 is disposed on one side in a z direction; and a third conductive part 313 in which the semiconductor laser element 4 is disposed on the one side in the z direction. The second conductive part 312 and the third conductive part 313 are separated in a y direction, the second conductive part 312 has a second recess 3121 recessed to the other side in the y direction, the third conductive part 313 has a third projection 3132 projecting to the other side in the y direction, the third projection 3132 and the second recess 3121 overlap to each other as viewed in the y direction, and the semiconductor laser element 4 is at least partially disposed on the third projection 3132. By such a configuration, the semiconductor laser device A2 can be reduced in a size in the y direction.SELECTED DRAWING: Figure 21

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor laser device. [Background technology]

[0002] Systems using LiDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging) have been proposed for three-dimensional distance measurement used in automobiles and the like (for example, Patent Document 1). The semiconductor laser device used as the light source for LiDAR emits pulsed laser light with a pulse width of several tens of nanoseconds or less. This increases the time rate of change of current, and increases losses due to inductance components within the semiconductor laser device. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-128432 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure has been made in light of the above circumstances, and an object of the present disclosure is to provide a semiconductor laser device that can reduce the inductance component. [Means for solving the problem]

[0005] The semiconductor laser device provided by the present disclosure is a semiconductor laser device comprising: a semiconductor laser element; a switching element having a gate electrode, a source electrode, and a drain electrode; and a support member having a conductive portion that forms a conduction path to the switching element and the semiconductor laser element and that supports the semiconductor laser element and the switching element, wherein the conductive portion has a first portion spaced apart from the semiconductor laser element and comprises one or more first wires connected to the source electrode of the switching element and the semiconductor laser element, and one or more second wires connected to the source electrode of the switching element and the first portion of the conductive portion. [Effects of the Invention]

[0006] According to the semiconductor laser device of the present disclosure, the inductance component can be reduced.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a plan view of a main portion showing a semiconductor laser device according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a bottom view showing the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 3] FIG. 2 is a cross-sectional view taken along line III-III in FIG. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Figure 5] FIG. 2 is a cross-sectional view taken along line VV in FIG. [Figure 6] FIG. 2 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] 1 is a circuit diagram showing a laser system including a semiconductor laser device according to a first embodiment of the present disclosure. [Figure 9]FIG. 2 is a circuit diagram showing a first modified example of a laser system including a semiconductor laser device according to the first embodiment of the present disclosure. [Figure 10] FIG. 10 is a circuit diagram showing a second modified example of the laser system including the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 11] FIG. 2 is a plan view of a main portion showing a first modified example of the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 12] FIG. 2 is a bottom view showing a first modified example of the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 13] FIG. 10 is a plan view of a main portion showing a second modified example of the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 14] FIG. 10 is a bottom view showing a second modified example of the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 15] FIG. 10 is a plan view of a main portion showing a third modified example of the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 16] FIG. 10 is a bottom view showing a third modified example of the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 17] FIG. 10 is a plan view of a main portion showing a fourth modified example of the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 18] FIG. 10 is a bottom view showing a fourth modified example of the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 19] FIG. 10 is a plan view of a main portion showing a fifth modified example of the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 20] FIG. 11 is a bottom view showing a fifth modified example of the semiconductor laser device according to the first embodiment of the present disclosure. [Figure 21] FIG. 4 is a plan view of a main part of a semiconductor laser device according to a second embodiment of the present disclosure. [Figure 22] FIG. 4 is a bottom view showing a semiconductor laser device according to a second embodiment of the present disclosure. [Figure 23] FIG. 10 is a plan view of a main portion showing a first modified example of a semiconductor laser device according to a second embodiment of the present disclosure. [Figure 24]FIG. 10 is a bottom view of a main part showing a first modified example of the semiconductor laser device according to the second embodiment of the present disclosure. [Figure 25] FIG. 25 is a cross-sectional view taken along line XXV-XXV in FIG. 23. [Figure 26] FIG. 10 is a plan view of a main portion showing a second modified example of the semiconductor laser device according to the second embodiment of the present disclosure. [Figure 27] FIG. 10 is a bottom view of a main part showing a second modified example of the semiconductor laser device according to the second embodiment of the present disclosure. [Figure 28] FIG. 10 is a plan view of a main portion showing a third modified example of the semiconductor laser device according to the second embodiment of the present disclosure. [Figure 29] FIG. 10 is a bottom view of a main part showing a third modified example of the semiconductor laser device according to the second embodiment of the present disclosure. [Figure 30] FIG. 10 is a plan view of a main portion showing a semiconductor laser device according to a third embodiment of the present disclosure. [Figure 31] FIG. 10 is a bottom view showing a semiconductor laser device according to a third embodiment of the present disclosure. [Figure 32] FIG. 11 is a plan view of a main portion showing a first modified example of a semiconductor laser device according to a third embodiment of the present disclosure. [Figure 33] FIG. 10 is a bottom view showing a first modified example of the semiconductor laser device according to the third embodiment of the present disclosure. [Figure 34] FIG. 10 is a plan view of a main portion showing a semiconductor laser device according to a fourth embodiment of the present disclosure. [Figure 35] FIG. 10 is a plan view of a main portion showing a semiconductor laser device according to a fourth embodiment of the present disclosure. [Figure 36] FIG. 10 is a bottom view showing a semiconductor laser device according to a fourth embodiment of the present disclosure. [Figure 37] FIG. 37 is a cross-sectional view taken along line XXXVII-XXXVII in FIG. 34. [Figure 38] FIG. 10 is a plan view of a main portion showing a first modified example of a semiconductor laser device according to a fourth embodiment of the present disclosure. [Figure 39] FIG. 10 is a plan view of a main portion showing a first modified example of a semiconductor laser device according to a fourth embodiment of the present disclosure. [Figure 40]FIG. 10 is a bottom view showing a first modified example of the semiconductor laser device according to the fourth embodiment of the present disclosure. [Figure 41] FIG. 10 is a plan view of a main portion showing a semiconductor laser device according to a fifth embodiment of the present disclosure. [Figure 42] FIG. 10 is a bottom view showing a semiconductor laser device according to a fifth embodiment of the present disclosure. [Figure 43] FIG. 43 is a cross-sectional view taken along line XLIII-XLIII in FIG. [Figure 44] FIG. 13 is a plan view of a main portion showing a first modified example of a semiconductor laser device according to a fifth embodiment of the present disclosure. [Figure 45] FIG. 11 is a bottom view showing a first modified example of the semiconductor laser device according to the fifth embodiment of the present disclosure. [Figure 46] FIG. 13 is a plan view of a main portion showing a second modified example of a semiconductor laser device according to a fifth embodiment of the present disclosure. [Figure 47] FIG. 13 is a bottom view showing a second modified example of the semiconductor laser device according to the fifth embodiment of the present disclosure. [Figure 48] FIG. 13 is a plan view of a main portion showing a third modified example of a semiconductor laser device according to a fifth embodiment of the present disclosure. [Figure 49] FIG. 13 is a bottom view showing a third modified example of the semiconductor laser device according to the fifth embodiment of the present disclosure. [Figure 50] FIG. 13 is a plan view of a main portion showing a fourth modified example of a semiconductor laser device according to a fifth embodiment of the present disclosure. [Figure 51] FIG. 13 is a bottom view showing a fourth modified example of the semiconductor laser device according to the fifth embodiment of the present disclosure. [Figure 52] FIG. 10 is a plan view of a main part of a semiconductor laser device according to a sixth embodiment of the present disclosure. [Figure 53] FIG. 10 is a bottom view showing a semiconductor laser device according to a sixth embodiment of the present disclosure. [Figure 54] FIG. 13 is a plan view of a main portion showing a first modified example of a semiconductor laser device according to a sixth embodiment of the present disclosure. [Figure 55] FIG. 13 is a bottom view of a main part showing a first modified example of a semiconductor laser device according to a sixth embodiment of the present disclosure. [Figure 56]FIG. 13 is a plan view of a main part of a semiconductor laser device according to a seventh embodiment of the present disclosure. [Figure 57] FIG. 13 is a bottom view showing a semiconductor laser device according to a seventh embodiment of the present disclosure. [Figure 58] FIG. 13 is a plan view of a main portion showing a first modified example of a semiconductor laser device according to a seventh embodiment of the present disclosure. [Figure 59] FIG. 13 is a bottom view showing a first modified example of the semiconductor laser device according to the seventh embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0009] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0011] First Embodiment 1 to 8 show a semiconductor laser device according to a first embodiment of the present disclosure. The semiconductor laser device A1 of this embodiment includes a support member 1, a semiconductor laser element 4, a switching element 5, a capacitor 6, a first wire 71, a second wire 72, a third wire 73, and a light-transmitting resin 8. The semiconductor laser device A1 constitutes, for example, a laser system B1 shown in FIG. 8 and is used as a pulsed laser light source for LiDAR, which is an example of two-dimensional distance measurement. However, the use of the semiconductor laser device of the present disclosure is not limited in any way.

[0012] FIG. 1 is a plan view of a main portion of the semiconductor laser device A1. FIG. 2 is a bottom view of the semiconductor laser device according to the semiconductor laser device A1. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 1. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 1. FIG. 5 is a cross-sectional view taken along line VV in FIG. 1. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 1. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 1. FIG. 8 is a circuit diagram showing a laser system B1 including the semiconductor laser device A1. In these figures, the z direction corresponds to the first direction in the present disclosure. For ease of explanation, the light-transmitting resin 8 is omitted from FIG. 1.

[0013] The support member 1 forms a conductive path to the semiconductor laser element 4 and the switching element 5, and supports the semiconductor laser element 4 and the switching element 5. The specific configuration of the support member 1 is not particularly limited, and in this embodiment, the support member 1 has a base material 2 and a conductive portion 3.

[0014] The substrate 2 is made of an insulating material. There are no particular limitations on the material of the substrate 2, and examples include epoxy resin and ceramics. In the following explanation, an example will be described in which the substrate 2 is made of glass epoxy resin. In this embodiment, the substrate 2 has a main surface 21, a back surface 22, a first surface 23, a second surface 24, a third surface 25, and a fourth surface 26, and is, for example, rectangular in shape when viewed in the z direction.

[0015] The main surface 21 is a surface facing one side in the z direction and is a flat surface in the illustrated example. The back surface 22 is a surface facing the other side in the z direction opposite the main surface 21 and is a flat surface in the illustrated example. The first surface 23 is a surface facing one side in the x direction and is a flat surface in the illustrated example. The second surface 24 is a surface facing the other side in the x direction opposite the first surface 23 and is a flat surface in the illustrated example. The third surface 25 is a surface facing one side in the y direction and is a flat surface in the illustrated example. The fourth surface 26 is a surface facing the other side in the x direction opposite the third surface 25 and is a flat surface in the illustrated example.

[0016] The conductive portion 3 is a portion that constitutes a conductive path to the semiconductor laser element 4, the switching element 5, etc. The material of the conductive portion 3 is not particularly limited, and examples thereof include metals such as Cu, Ni, Ti, and Au. The method for forming the conductive portion 3 is also not particularly limited, and in the illustrated example, the conductive portion 3 is formed by plating, for example.

[0017] The conductive portion 3 of this embodiment includes a main surface portion 31 , a back surface portion 32 and a connecting portion 33 .

[0018] The main surface portion 31 is disposed on the main surface 21 of the substrate 2. In the illustrated example, the main surface portion 31 includes a first main surface portion 311, a second main surface portion 312, a third main surface portion 313, and a fourth main surface portion 314.

[0019] As shown in FIGS. 1, 3, 4, and 7, the main surface first portion 311 is disposed on the second surface 24 side of the main surface 21 of the substrate 2 in the x direction and on the third surface 25 side in the y direction. The shape of the main surface first portion 311 is not particularly limited, and in the illustrated example, it is an elongated rectangle with the x direction as its longitudinal direction. The main surface first portion 311 is an example of the "first portion" of the present disclosure. The main surface first portion 311 of this embodiment is spaced apart from the second surface 24 and the third surface 25.

[0020] As shown in FIGS. 1, 3, 4, and 6, the principal surface second portion 312 is disposed closer to the fourth surface 26 in the y direction than the principal surface first portion 311. The x-direction dimension of the principal surface second portion 312 is greater than the x-direction dimension of the principal surface first portion 311. The principal surface second portion 312 overlaps with the principal surface first portion 311 when viewed in the y direction. The shape of the principal surface second portion 312 is not particularly limited, and in the illustrated example, it is rectangular. The area of ​​the principal surface second portion 312 is greater than the areas of the principal surface first portion 311, the principal surface third portion 313, and the principal surface fourth portion 314. The principal surface second portion 312 in this embodiment is spaced apart from the first surface 23 and the second surface 24.

[0021] 1, 3, 4, and 5, the principal surface third portion 313 is disposed closer to the fourth surface 26 in the y direction than the principal surface second portion 312. The shape of the principal surface third portion 313 is not particularly limited, and in the illustrated example, it is an elongated rectangle with the x direction as its longitudinal direction. Furthermore, in the illustrated example, the x direction dimension of the principal surface third portion 313 is substantially the same as the x direction dimension of the principal surface second portion 312. The principal surface third portion 313 overlaps with the principal surface first portion 311 and the principal surface second portion 312 when viewed in the y direction. The principal surface third portion 313 in this embodiment is spaced apart from the first surface 23, the second surface 24, and the fourth surface 26.

[0022] As shown in FIGS. 1 and 7 , the principal surface fourth portion 314 is located closer to the first surface 23 in the x direction than the principal surface first portion 311, and closer to the third surface 25 in the y direction than the principal surface second portion 312. The shape of the principal surface fourth portion 314 is not particularly limited, and in the illustrated example, it is rectangular. In the illustrated example, the y direction dimension of the principal surface fourth portion 314 is approximately the same as the y direction dimension of the principal surface first portion 311. Furthermore, the x direction dimension of the principal surface fourth portion 314 is smaller than the x direction dimension of the principal surface first portion 311. The area of ​​the principal surface fourth portion 314 is smaller than the area of ​​the principal surface first portion 311. The principal surface fourth portion 314 overlaps with the principal surface first portion 311 when viewed in the x direction. Furthermore, the principal surface fourth portion 314 overlaps with the principal surface second portion 312 and the principal surface third portion 313 when viewed in the y direction. In this embodiment, the fourth main surface portion 314 is spaced apart from the first surface 23 and the third surface 25.

[0023] The back surface portion 32 is disposed on the back surface 22 of the base material 2. In the illustrated example, the back surface portion 32 includes a first back surface portion 321, a second back surface portion 322, a third back surface portion 323, and a fourth back surface portion 324. In this embodiment, the back surface portion 32 is used as a mounting terminal when the semiconductor laser device A1 is mounted on a circuit board (not shown) or the like.

[0024] 1, 3, 4, and 7, the rear surface first portion 321 is disposed on the rear surface 22 of the substrate 2 on the second surface 24 side in the x direction and on the third surface 25 side in the y direction. The shape of the rear surface first portion 321 is not particularly limited, and in the illustrated example, it is an elongated rectangle with the x direction as its longitudinal direction. The rear surface first portion 321 of this embodiment is spaced apart from the second surface 24 and the third surface 25.

[0025] As shown in FIGS. 2, 3, 4, and 6, the rear surface second portion 322 is disposed closer to the fourth surface 26 in the y direction than the rear surface first portion 321. The x-direction dimension of the rear surface second portion 322 is larger than the x-direction dimension of the rear surface first portion 321. The rear surface second portion 322 overlaps with the rear surface first portion 321 when viewed in the y direction. The shape of the rear surface second portion 322 is not particularly limited, and in the illustrated example, is rectangular. The area of ​​the rear surface second portion 322 is larger than the areas of the rear surface first portion 321, the rear surface third portion 323, and the rear surface fourth portion 324. The rear surface second portion 322 in this embodiment is spaced apart from the first surface 23 and the second surface 24.

[0026] As shown in FIGS. 2, 3, 4, and 5, the rear surface third portion 323 is disposed closer to the fourth surface 26 in the y direction than the rear surface second portion 322. The shape of the rear surface third portion 323 is not particularly limited, and in the illustrated example, it is an elongated rectangle with the x direction as its longitudinal direction. In addition, in the illustrated example, the x direction dimension of the rear surface third portion 323 is approximately the same as the x direction dimension of the rear surface second portion 322. The rear surface third portion 323 overlaps with the rear surface first portion 321 and the rear surface second portion 322 when viewed in the y direction. The rear surface third portion 323 in this embodiment is spaced apart from the first surface 23, the second surface 24, and the fourth surface 26.

[0027] As shown in FIGS. 2 and 7 , the back surface fourth portion 324 is located closer to the first surface 23 in the x direction than the back surface first portion 321, and is located closer to the third surface 25 in the y direction than the back surface second portion 322. The shape of the back surface fourth portion 324 is not particularly limited, and in the illustrated example, it is rectangular. In the illustrated example, the y direction dimension of the back surface fourth portion 324 is approximately the same as the y direction dimension of the back surface first portion 321. Furthermore, the x direction dimension of the back surface fourth portion 324 is smaller than the x direction dimension of the back surface first portion 321. The area of ​​the back surface fourth portion 324 is smaller than the area of ​​the back surface first portion 321. The back surface fourth portion 324 overlaps with the back surface first portion 321 when viewed in the x direction. Furthermore, the back surface fourth portion 324 overlaps with the back surface second portion 322 and the back surface third portion 323 when viewed in the y direction. In this embodiment, the fourth rear surface portion 324 is spaced apart from the first surface 23 and the third surface 25.

[0028] The connecting portions 33 electrically connect the respective portions of the main surface portion 31 and the respective portions of the back surface portion 32. The specific configuration of the connecting portions 33 is not particularly limited, and in the illustrated example, as shown in Figures 1 and 2, the connecting portions 33 include a plurality of first connecting portions 331, a plurality of second connecting portions 332, a plurality of third connecting portions 333, and a fourth connecting portion 334. Note that there is no limitation on the numbers of the first connecting portions 331, second connecting portions 332, third connecting portions 333, and fourth connecting portions 334.

[0029] The specific configurations of the first connecting portion 331, the second connecting portion 332, the third connecting portion 333, and the fourth connecting portion 334 are not particularly limited. In this embodiment, as shown in FIGS. 1 to 7 , the first connecting portion 331, the second connecting portion 332, the third connecting portion 333, and the fourth connecting portion 334 penetrate the base material 2 in the thickness direction in an inner region of the base material 2 when viewed in the z direction (a region spaced from the first surface 23, the second surface 24, the third surface 25, and the fourth surface 26). The first connecting portion 331, the second connecting portion 332, the third connecting portion 333, and the fourth connecting portion 334 are provided by forming a plating layer made of metal on the inner surface of a through hole formed in the base material 2, and reach the main surface 21 and the back surface 22. In the illustrated example, the interiors of the first connecting portion 331, the second connecting portion 332, the third connecting portion 333, and the fourth connecting portion 334 are filled with resin, but may be filled with, for example, metal.

[0030] 1, 2, 3, 4, and 7, the plurality of first connecting portions 331 are connected to the main surface first portion 311 and the back surface first portion 321, and connect the main surface first portion 311 and the back surface first portion 321. In this embodiment, the plurality of first connecting portions 331 are arranged along the x direction.

[0031] 1, 2, and 6, the plurality of second connecting portions 332 are connected to the rear surface first portion 321 and the rear surface second portion 322, and connect the main surface second portion 312 and the rear surface second portion 322. In this embodiment, the plurality of second connecting portions 332 are arranged closer to the first surface 23 in the x direction. In the illustrated example, the plurality of second connecting portions 332 are arranged in a matrix along the x direction and the y direction.

[0032] 1, 2, 3, and 5, the plurality of third connecting portions 333 are connected to the main surface third portion 313 and the back surface third portion 323, and connect the main surface third portion 313 and the back surface third portion 323. In this embodiment, the plurality of third connecting portions 333 are arranged along the x direction. Furthermore, the plurality of third connecting portions 333 are arranged closer to the first surface 23 in the x direction.

[0033] 1, 2, and 7, the fourth connecting portion 334 is connected to the main surface fourth portion 314 and the back surface fourth portion 324, and connects the main surface fourth portion 314 and the back surface fourth portion 324. Unlike the illustrated example, a configuration having a plurality of fourth connecting portions 334 may be used.

[0034] The semiconductor laser element 4 is a light source of the semiconductor laser device A1 and includes an active layer made of a semiconductor layer, etc. In this embodiment, as shown in FIG. 3, the semiconductor laser element 4 has a first laser electrode 41 and a second laser electrode 42. The first laser electrode 41 is provided on the side where the main surface 21 faces in the z direction. The second laser electrode 42 is provided on the side where the back surface 22 faces in the z direction. The first laser electrode 41 is omitted in FIG. 1. In this embodiment, the first laser electrode 41 is an anode electrode, and the second laser electrode 42 is a cathode electrode.

[0035] As shown in FIGS. 1 and 3 , in this embodiment, the semiconductor laser element 4 is disposed on the main surface third portion 313. More specifically, the second laser electrode 42 of the semiconductor laser element 4 is conductively joined to the main surface third portion 313 by a conductive bonding material 49. The conductive bonding material 49 is, for example, solder or silver paste. In the illustrated example, the semiconductor laser element 4 is enclosed within the main surface third portion 313 when viewed in the z direction. The semiconductor laser element 4 emits laser light L toward the side toward which the fourth surface 26 faces in the y direction. Furthermore, in the illustrated example, the semiconductor laser element 4 overlaps with one of the multiple third connecting portions 333 that is located closest to the second surface 24 in the x direction when viewed in the z direction.

[0036] The switching element 5 is an element for turning on and off the current to the semiconductor laser element 4. The switching element 5 is a transistor such as an FET made of, for example, Si, SiC, or GaN. When the switching element 5 is made of SiC, it is suitable for achieving high-speed switching. As shown in FIGS. 1, 3, and 6, the switching element 5 of this embodiment has an element body 51, a gate electrode 52, a source electrode 53, and a drain electrode 54. The element body 51 is made of a semiconductor material such as Si or SiC, and has an element main surface 511 and an element back surface 512. The element main surface 511 faces the same side as the main surface 21 in the z direction. The element back surface 512 faces the same side as the back surface 22 in the z direction.

[0037] The gate electrode 52 is disposed on the element principal surface 511. In the illustrated example, the gate electrode 52 is disposed closer to the first surface 23 in the x direction and closer to the third surface 25 in the y direction. The shape of the gate electrode 52 is not particularly limited, and in the illustrated example, it is rectangular when viewed in the z direction.

[0038] The source electrode 53 is disposed on the element principal surface 511. In the illustrated example, the source electrode 53 is L-shaped when viewed in the z direction, and is disposed in a region on the second surface 24 side in the x direction and a region closer to the fourth surface 26 in the y direction with respect to the gate electrode 52.

[0039] The drain electrode 54 is disposed on the rear surface 512 of the device, and in the example shown, covers substantially the entire surface of the rear surface 512 of the device.

[0040] The switching element 5 is disposed on the second main surface portion 312 by electrically connecting the drain electrode 54 to the second main surface portion 312 with a conductive bonding material 59. The conductive bonding material 59 is, for example, solder or silver paste. In this embodiment, the switching element 5 is disposed on the second main surface portion 312 closer to the first surface 23 in the x direction. The switching element 5 overlaps with all of the multiple second connecting portions 332 when viewed in the z direction. The switching element 5 overlaps with the semiconductor laser element 4 when viewed in the y direction.

[0041] The capacitor 6 temporarily stores electric charge that will become a current flowing through the semiconductor laser element 4. As shown in FIGS. 1 and 4 , in the illustrated example, the capacitor 6 has an electrode 61 and an electrode 62. The electrode 61 is conductively joined to the main surface third portion 313 by a conductive bonding material 69. The electrode 62 is conductively joined to the main surface second portion 312 by a conductive bonding material 69. The conductive bonding material 69 is, for example, solder. For convenience of explanation, the conductive bonding material 69 is omitted from FIG. 1 . In addition, in this embodiment, the semiconductor laser device A1 includes two capacitors 6. The two capacitors 6 are connected in parallel with each other. In addition, in this embodiment, the capacitor 6 is disposed closer to the second surface 24 in the x direction than the semiconductor laser element 4 and the switching element 5.

[0042] As shown in FIGS. 1 and 3 , the multiple first wires 71 are connected to the source electrode 53 of the switching element 5 and the first laser electrode 41 of the semiconductor laser element 4. The first wires 71 are made of a metal such as Au, Cu, or Al. The number of the multiple first wires 71 is not particularly limited, and in the illustrated example, there are three. The multiple first wires 71 are connected to a portion of the source electrode 53 closer to the fourth surface 26 in the y direction. The multiple first wires 71 are connected to the first laser electrode 41 of the semiconductor laser element 4 so as to be aligned in the y direction.

[0043] As shown in FIGS. 1 and 3 , the multiple second wires 72 are connected to the source electrode 53 of the switching element 5 and the main surface first portion 311 of the main surface portion 31 of the conductive portion 3. The second wires 72 are made of a metal such as Au, Cu, or Al, and in this embodiment, are made of Au, the same material as the first wires 71. The number of the multiple second wires 72 is not particularly limited, and in the illustrated example, there are two, which is fewer than the number of the multiple first wires 71. Therefore, the resistance value of the multiple first wires 71 is smaller than the resistance value of the multiple second wires 72. The multiple second wires 72 are connected to a portion of the source electrode 53 closer to the third surface 25 in the y direction. The multiple second wires 72 are connected to the main surface first portion 311 so as to be aligned in the x direction.

[0044] 1, the third wire 73 is connected to the gate electrode 52 of the switching element 5 and the fourth main surface portion 314 of the main surface portion 31 of the conductive portion 3. The third wire 73 is made of a metal such as Au, Cu, or Al, and is made of Au in this embodiment. The number of third wires 73 is not particularly limited, and is one in the illustrated example.

[0045] The light-transmitting resin 8 is disposed on the main surface 21, and covers the semiconductor laser element 4, the switching element 5, the plurality of capacitors 6, the plurality of first wires 71, the plurality of second wires 72, and the third wires 73. The light-transmitting resin 8 is made of a material that transmits the laser light L from the semiconductor laser element 4, and is made of, for example, a transparent epoxy resin or silicone resin.

[0046] The shape of the translucent resin 8 is not particularly limited, and in this embodiment, as shown in Figures 3 to 7, the translucent resin 8 has a main surface 81, a first resin surface 83, a second resin surface 84, a third resin surface 85, and a fourth resin surface 86.

[0047] The principal surface 81 is a surface facing the same side as the principal surface 21 in the z direction, and in the illustrated example, is a flat surface. The resin first surface 83 is a surface facing the same side as the first surface 23 in the x direction. In the illustrated example, the resin first surface 83 is a flat surface and is flush with the first surface 23. The resin second surface 84 is a surface facing the same side as the second surface 24 in the x direction. In the illustrated example, the resin second surface 84 is a flat surface and is flush with the second surface 24. The resin third surface 85 is a surface facing the same side as the third surface 25 in the y direction. In the illustrated example, the resin third surface 85 is a flat surface and is flush with the third surface 25. The resin fourth surface 86 is a surface facing the same side as the fourth surface 26 in the y direction. In the illustrated example, the resin fourth surface 86 is a flat surface and is flush with the resin fourth surface 86. In this embodiment, the laser light L from the semiconductor laser element 4 is emitted from a fourth resin surface 86 of the light-transmitting resin 8. By making the fourth resin surface 86 a flat and smooth surface, scattering of the laser light L can be suppressed and the emission efficiency can be increased.

[0048] 8, the semiconductor laser device A1 can be used in a laser system B1. The laser system B1 includes the semiconductor laser device A1, a gate driver 91, a DC power supply 92, a resistor 93, and a diode 94.

[0049] The gate driver 91 is connected to the gate electrode 52 of the switching element 5 via the rear surface fourth portion 324, the fourth connecting portion 334, the main surface fourth portion 314, and the third wire 73. The gate driver 91 controls the drive voltage applied to the gate electrode 52.

[0050] The DC power supply 92 is a power supply for causing the semiconductor laser element 4 to emit light. The anode electrode of the DC power supply 92 is connected to the second rear surface portion 322 via a resistor 93.

[0051] The diode 94 is provided between the back surface first portion 321 and the back surface third portion 323, and passes a current from the back surface third portion 323 to the back surface first portion 321. The diode 94 serves to prevent application of an excessive reverse voltage to the semiconductor laser element 4 and to charge the capacitor 6.

[0052] In the laser system B1 configured as above, when the switching element 5 is in the OFF state, a current IC flows from the DC power supply 92 through a path including the resistor 93, the back surface second portion 322, the capacitor 6, the back surface third portion 323, the diode 94, and the back surface first portion 321, charging the capacitor 6. Then, when the switching element 5 is in the ON state, the charge stored in the capacitor 6 flows as a current IL through the path of the switching element 5, the first wire 71, and the semiconductor laser element 4, causing the semiconductor laser element 4 to emit light.

[0053] Next, the operation of the semiconductor laser device A1 will be described.

[0054] According to this embodiment, as shown in FIGS. 1 and 8 , the current I G that flows when a voltage is applied from the gate driver 91 to the gate electrode 52 of the switching element 5 mainly flows from the source electrode 53 to the back surface first portion 321 through the second wire 72. On the other hand, the current I L that causes the semiconductor laser element 4 to emit light mainly flows from the source electrode 53 to the semiconductor laser element 4 through the first wire 71. Therefore, the currents I L and I G mainly flow through different paths. This makes it possible to prevent the current I L from passing through the current path for applying a gate voltage to the gate electrode 52, for example. Furthermore, the source electrode 53 and the semiconductor laser element 4 are directly connected to each other by the first wire 71. This reduces the inductance component of the path of the current I L . This enables faster switching and further increases the peak current value of the current I L . This is advantageous for emitting laser light L with a smaller pulse width at a higher output, making it preferable for a LiDAR light source device.

[0055] The principal surface portion 31, on which the semiconductor laser element 4, switching element 5, and capacitor 6 are mounted and to which the first wire 71, second wire 72, and third wire 73 are connected, is disposed on the principal surface 21. The principal surface portion 31 and the rear surface portion 32, which serves as a connection terminal for connecting to the outside, are disposed so as to overlap each other as viewed in the z direction. This is suitable for miniaturizing the semiconductor laser device A1 as viewed in the z direction. The principal surface portion 31 and the rear surface portion 32 are connected by a connecting portion 33. The connecting portion 33 includes a first connecting portion 331, a second connecting portion 332, a third connecting portion 333, and a fourth connecting portion 334 that penetrate the base material 2. The first connecting portion 331, the second connecting portion 332, the third connecting portion 333, and the fourth connecting portion 334 are all shaped along the z direction and are not bent. This is advantageous for reducing the inductance component in the path of the current flowing through the semiconductor laser device A1.

[0056] 1, the switching element 5 and the capacitor 6 are aligned in the x direction. The semiconductor laser element 4 is mounted on the third main surface portion 313, which is located closer to the main surface 21 in the y direction than the switching element 5 and the capacitor 6. For this reason, the length of the path from the source electrode 53 of the switching element 5 via the first wire 71, the semiconductor laser element 4, the third main surface portion 313, and the capacitor 6 to the second main surface portion 312 is set to be relatively short. This is suitable for reducing the inductance component of the path of the current IL in FIG. 8.

[0057] The number of the multiple first wires 71 is greater than the number of the multiple second wires 72, and the resistance value of the multiple first wires 71 is smaller than the resistance value of the multiple second wires 72. A current IL that causes the semiconductor laser device 4 to emit light flows through the multiple first wires 71. The current IL is significantly greater than the current IG. Therefore, by reducing the resistance value of the multiple first wires 71, electrical loss can be suppressed.

[0058] The number of the plurality of second wires 72 is greater than the number of the third wires 73. This makes it possible to suppress electrical loss related to the current IG.

[0059] 9 to 59 show modifications and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as those in the above embodiment.

[0060] <Laser System B1 First Modification> 9 shows a first modified example of the laser system B1. The laser system B11 of this modified example includes a resistor 95. The resistor 95 is connected in series with the diode 94 between the rear surface third portion 323 and the rear surface first portion 321. By including the resistor 95, it is possible to suppress oscillations in the current value that occur when the switching element 5 is switched from the ON state to the OFF state.

[0061] <Laser System B1 Second Modification> 10 shows a second modified example of the laser system B1. The laser system B12 of this modified example does not include the diode 94 described above. A resistor 95 is provided between the back surface first portion 321 and the back surface third portion 323. In this modified example, although a current can always flow from the back surface first portion 321 to the back surface third portion 323, the laser system B12 can be operated by adjusting the operating conditions.

[0062] <First Modification of First Embodiment> 11 is a plan view of a main portion showing a first modified example of the semiconductor laser device A1. FIG. 12 is a bottom view showing the first modified example of the semiconductor laser device A1. In the semiconductor laser device A11 of this modified example, the main surface first portion 311 is disposed closer to the first surface 23 in the x direction on the main surface 21 of the base 2, and the main surface fourth portion 314 is disposed closer to the second surface 24 in the x direction. The main surface second portion 312 is disposed closer to the fourth surface 26 in the y direction relative to the main surface first portion 311 and the main surface fourth portion 314. The main surface third portion 313 is disposed closer to the fourth surface 26 in the y direction relative to the main surface second portion 312. The x-direction dimensions of the main surface second portion 312 and the main surface third portion 313 are substantially the same.

[0063] The back surface first portion 321 is disposed closer to the first surface 23 in the x direction on the back surface 22 of the base material 2, and the back surface fourth portion 324 is disposed closer to the second surface 24 in the x direction. The back surface second portion 322 is disposed closer to the fourth surface 26 in the y direction relative to the back surface first portion 321 and the back surface fourth portion 324. The back surface third portion 323 is disposed closer to the fourth surface 26 in the y direction relative to the back surface second portion 322. The x direction dimensions of the back surface second portion 322 and the back surface third portion 323 are substantially the same.

[0064] In this example, the main surface second portion 312 has a convex portion 3122. The convex portion 3122 protrudes from a portion closer to the second surface 24 in the x direction toward the fourth surface 26 in the y direction. The main surface third portion 313 has a convex portion 3133. The convex portion 3133 protrudes from a portion closer to the first surface 23 in the x direction toward the third surface 25 in the y direction. The convex portion 3122 and the convex portion 3133 are aligned in the x direction and overlap when viewed in the x direction.

[0065] The switching element 5 is disposed so that its center in the x direction substantially coincides with that of the main surface second portion 312. The gate electrode 52 is disposed closer to the second surface 24 in the x direction, and the source electrode 53 is disposed in a region closer to the first surface 23 in the x direction and a region closer to the fourth surface 26 in the y direction with respect to the gate electrode 52.

[0066] The semiconductor laser element 4 is disposed at a position overlapping the protrusion 3133 when viewed in the y direction. The electrode 62 of the capacitor 6 is conductively joined to the protrusion 3122 of the second main surface portion 312. The semiconductor laser element 4 and the capacitor 6 are aligned in the x direction and overlap each other when viewed in the x direction. Furthermore, the capacitor 6 overlaps the switching element 5 when viewed in the y direction.

[0067] This modification also makes it possible to reduce the inductance component. Furthermore, since the switching element 5 and the capacitor 6 are configured to overlap when viewed in the y direction, the dimension of the semiconductor laser device A11 in the x direction can be reduced. Furthermore, since the protrusions 3122 and the protrusions 3133 are configured to overlap when viewed in the x direction, the dimension of the semiconductor laser device A11 in the y direction can be reduced.

[0068] <Second Modification of First Embodiment> Fig. 13 is a plan view of a main part showing a second modified example of the semiconductor laser device A1. Fig. 14 is a bottom view showing the second modified example of the semiconductor laser device A1. The semiconductor laser device A12 of this modified example differs from the semiconductor laser device A11 described above in that it includes two semiconductor laser elements 4.

[0069] The two semiconductor laser elements 4 are arranged side by side in the x direction. Each of the two semiconductor laser elements 4 emits laser light L in the y direction.

[0070] The plurality of first wires 71 are each connected to the source electrode 53, the first laser electrode 41 of one semiconductor laser element 4, and the first laser electrode 41 of the other semiconductor laser element 4, and have a bent shape.

[0071] This modification also makes it possible to reduce the inductance component. Furthermore, by providing two semiconductor laser elements 4, it is possible to achieve higher brightness.

[0072] <Third Modification of First Embodiment> Fig. 15 is a plan view of a main part showing a third modified example of the semiconductor laser device A1. Fig. 16 is a bottom view showing the third modified example of the semiconductor laser device A1. The semiconductor laser device A13 of this modified example differs from the semiconductor laser device A12 described above in that the two semiconductor laser elements 4 emit laser light L in the x direction.

[0073] The two semiconductor laser elements 4 are arranged side by side in the y direction. One of the semiconductor laser elements 4 is arranged on the convex portion 3133. Each of the two semiconductor laser elements 4 emits laser light L in the x direction.

[0074] This modification also makes it possible to reduce the inductance component. Furthermore, by providing two semiconductor laser elements 4, it is possible to achieve high brightness. As can be seen from this modification, the direction in which the laser light L is emitted can be set in various ways.

[0075] <Fourth Modification of First Embodiment> Fig. 17 is a plan view of a main part showing a fourth modified example of the semiconductor laser device A1. Fig. 18 is a bottom view showing the fourth modified example of the semiconductor laser device A1. The semiconductor laser device A14 of this modified example differs from the semiconductor laser device A13 described above in the number of semiconductor laser elements 4.

[0076] In this modification, the number of semiconductor laser elements 4 is one. The semiconductor laser element 4 is disposed on the protrusion 3133.

[0077] This modification also makes it possible to reduce the inductance component. As can be seen from the semiconductor laser device A13 and this modification, the number of semiconductor laser elements 4 can be set in various ways.

[0078] <Fifth Modification of First Embodiment> Fig. 19 is a plan view of a main part showing a fifth modified example of the semiconductor laser device A1. Fig. 20 is a bottom view showing the fifth modified example of the semiconductor laser device A1. The semiconductor laser device A15 of this modified example includes a diode 94.

[0079] The diode 94 is provided in series between the first main surface portion 311 and the third main surface portion 313, and allows a current to flow from the third main surface portion 313 to the first main surface portion 311. In the illustrated example, the diode 94 is mounted on the first main surface portion 311.

[0080] In the illustrated example, semiconductor laser element 4 is configured to emit laser light L in the x direction, but is not limited thereto and may be configured to emit laser light L in the y direction, for example. The arrangement of main surface first portion 311, main surface second portion 312, main surface third portion 313, main surface fifth portion 315, back surface first portion 321, back surface second portion 322, and intermediate second portion 342 is not limited in any way as long as it is an arrangement that can configure the circuit that constitutes the illustrated example.

[0081] This modification also makes it possible to reduce the inductance component. The inductance component of the conduction path of the current IC flowing through the diode 94 can be reduced by incorporating the diode 94 in the semiconductor laser device A15.

[0082] Second Embodiment Fig. 21 is a plan view of a main part of a semiconductor laser device according to a second embodiment of the present disclosure, and Fig. 22 is a bottom view of the semiconductor laser device according to the second embodiment of the present disclosure.

[0083] In the semiconductor laser device A2 of this embodiment, the main surface second portion 312 has a recess 3121. The recess 3121 is a portion of the main surface second portion 312 on the fourth surface 26 side in the y direction that is recessed in the y direction toward the third surface 25 side. The recess 3121 is located at the center of the main surface second portion 312 in the x direction.

[0084] In this embodiment, the main surface third portion 313 has a convex portion 3132. The convex portion 3132 is a portion of the main surface third portion 313 on the third surface 25 side in the y direction that protrudes toward the third surface 25 in the y direction. The convex portion 3132 is located at the center of the main surface third portion 313 in the x direction. Furthermore, the convex portion 3132 overlaps with the concave portion 3121 when viewed in the y direction.

[0085] The semiconductor laser element 4 is disposed at a position overlapping the convex portion 3132 when viewed in the y direction, and overlaps at least a portion of the convex portion 3132 when viewed in the z direction. The two capacitors 6 are disposed on both sides of the semiconductor laser element 4 in the x direction. The two capacitors 6 do not overlap the concave portion 3121 or the convex portion 3132 when viewed in the y direction.

[0086] This embodiment also makes it possible to reduce the inductance component. In addition, since the semiconductor laser element 4 is disposed closer to the center in the x direction of the support member 1, the laser light L can be emitted from a position closer to the center in the x direction of the semiconductor laser device A2.

[0087] A recess 3121 is formed in the second principal surface portion 312, and a protrusion 3132 is formed in the third principal surface portion 313. The recess 3121 and the protrusion 3132 overlap when viewed in the y direction, and the semiconductor laser element 4 overlaps the recess 3121 and the protrusion 3132 when viewed in the y direction. With this configuration, the dimension of the semiconductor laser device A2 in the y direction can be reduced.

[0088] <First Modification of Second Embodiment> Fig. 23 is a plan view of a main part showing a first modified example of the semiconductor laser device A2, Fig. 24 is a bottom view of a main part showing the first modified example of the semiconductor laser device A2, and Fig. 25 is a cross-sectional view taken along line XXV-XXV in Fig. 23.

[0089] In the semiconductor laser device A21 of this modified example, the substrate 2 has a recess 261. The recess 261 is a portion recessed from the fourth surface 26 toward the third surface 25 in the y direction. The recess 261 is disposed toward the center of the substrate 2 in the x direction. The principal surface third portion 313 has a recess 3131 and a protrusion 3132. The recess 3131 is a portion of the principal surface third portion 313 on the fourth surface 26 side in the y direction that is recessed toward the third surface 25 in the y direction. The protrusion 3132 is a portion of the principal surface third portion 313 on the third surface 25 side in the y direction that protrudes toward the third surface 25 in the y direction. The recess 261, the recess 3131, and the protrusion 3132 overlap each other when viewed in the y direction. The recess 261 and the recess 3131 overlap each other with the semiconductor laser element 4.

[0090] 25, the recess 261 is recessed toward the third surface 25 in the y direction with respect to the fourth resin surface 86 of the light-transmitting resin 8. That is, the recess 261 is spaced apart from the fourth resin surface 86, and the light-transmitting resin 8 is filled in the recess 261.

[0091] This modification also makes it possible to reduce the inductance component. Furthermore, by providing the recess 261, the edge of the recess 261 and the edge in the y direction of the semiconductor laser element 4 (the emission portion of the laser light L) are closer to each other. This makes it possible to prevent the laser light L from interfering with the base material 2. Furthermore, since the fourth resin surface 86 is flat, the entire semiconductor laser device A21 has a simple rectangular parallelepiped shape, which has the advantage of facilitating work such as transportation and mounting.

[0092] <Second Modification of Second Embodiment> Fig. 26 is a plan view of a main part showing a second modified example of the semiconductor laser device A2, and Fig. 27 is a bottom view of a main part showing the second modified example of the semiconductor laser device A2.

[0093] The semiconductor laser device A22 of this modification includes two semiconductor laser elements 4, and the other configuration is the same as or similar to that of the semiconductor laser device A2 described above. The two semiconductor laser elements 4 are mounted on the third main surface portion 313 and disposed between two capacitors 6. The two semiconductor laser elements 4 are aligned in the x direction, and each emits laser light L in the y direction. Each of the two semiconductor laser elements 4 and the source electrode 53 of the switching element 5 are connected by a plurality of first wires 71.

[0094] This modification also makes it possible to reduce the inductance component. Furthermore, providing two semiconductor laser elements 4 is advantageous for achieving high brightness. Furthermore, arranging the two semiconductor laser elements 4 together near the center of the semiconductor laser device A22 in the x direction is advantageous for miniaturizing optical components that refract or reflect light from the semiconductor laser device A22.

[0095] <Third Modification of Second Embodiment> Fig. 28 is a plan view of a main part showing a third modified example of the semiconductor laser device A2, and Fig. 29 is a bottom view of a main part showing the third modified example of the semiconductor laser device A2.

[0096] The semiconductor laser device A23 of this modification includes a diode 94, and other configurations are the same as or similar to those of the semiconductor laser device A2 described above.

[0097] Principal surface first portion 311 is disposed on the second surface 24 side in the x direction relative to principal surface second portion 312. Principal surface fourth portion 314 is disposed on the second surface 24 side in the x direction relative to principal surface second portion 312. Principal surface fourth portion 314 is disposed on the third surface 25 side in the y direction relative to principal surface first portion 311.

[0098] The diode 94 is provided in series between the main surface first portion 311 and the main surface third portion 313, and allows a current to flow from the main surface third portion 313 to the main surface first portion 311. In the example shown, the diode 94 is mounted on the main surface first portion 311. The diode 94 overlaps with the switching element 5 when viewed in the x direction. The diode 94 also overlaps with the two capacitors 6 when viewed in the x direction. The diode 94 does not overlap with the semiconductor laser element 4 when viewed in the x direction.

[0099] In the illustrated example, semiconductor laser element 4 is configured to emit laser light L in the x direction, but is not limited thereto and may be configured to emit laser light L in the y direction, for example. The arrangement of main surface first portion 311, main surface second portion 312, main surface third portion 313, main surface fifth portion 315, back surface first portion 321, back surface second portion 322, back surface third portion 323, and intermediate second portion 342 is not limited in any way as long as it is an arrangement that can configure the circuit that constitutes the illustrated example.

[0100] This modification also makes it possible to reduce the inductance component. Incorporating the diode 94 into the semiconductor laser device A15 is particularly advantageous for reducing the inductance component of the conduction path of the above-described current IC flowing through the diode 94. Note that although a laser system using the semiconductor laser device A23 can be constructed without using the back-surface third part 323, providing the back-surface third part 323 can improve the mounting strength and heat dissipation of the semiconductor laser device A23.

[0101] Third Embodiment Fig. 30 is a plan view of a main portion of a semiconductor laser device according to a third embodiment of the present disclosure. Fig. 31 is a bottom view of a semiconductor laser device according to the third embodiment of the present disclosure. In the semiconductor laser device A3 of this embodiment, the configurations of the main surface portion 31, the back surface portion 32, and the connecting portion 33 are different from those of the above-described embodiments.

[0102] The main surface portion 31 of this embodiment has a first main surface portion 311, a second main surface portion 312, a third main surface portion 313, a fourth main surface portion 314, and a fifth main surface portion 315. The arrangement of the first main surface portion 311, the second main surface portion 312, the third main surface portion 313, and the fourth main surface portion 314 is similar to that of, for example, the semiconductor laser device A11. However, in this embodiment, the second main surface portion 312 does not have a protrusion 3122 and is rectangular when viewed in the z direction. The third main surface portion 313 does not have a protrusion 3133 and is rectangular when viewed in the z direction.

[0103] The fifth principal surface portion 315 is disposed closer to the fourth surface 26 in the y direction than the third principal surface portion 313. The shape of the fifth principal surface portion 315 is not particularly limited, and in the illustrated example, it is a rectangle with its longitudinal direction in the x direction.

[0104] The semiconductor laser element 4 has the second laser electrode 42 conductively bonded to the main surface third portion 313, and is disposed on the main surface third portion 313. The electrode 62 of the capacitor 6 is conductively bonded to the main surface third portion 313. The electrode 61 of the capacitor 6 is conductively bonded to the main surface fifth portion 315.

[0105] 31, the rear surface first portion 321 is disposed closer to the third surface 25 in the y direction and closer to the first surface 23 in the x direction. The rear surface fourth portion 324 is disposed closer to the second surface 24 in the x direction than the rear surface first portion 321.

[0106] The back surface second portion 322 is disposed closer to the fourth surface 26 in the y direction than the back surface first portion 321 and the back surface fourth portion 324. The back surface second portion 322 has a recess 3221. The recess 3221 is a region where a portion of the back surface second portion 322 on the first surface 23 side in the x direction is recessed toward the second surface 24 side in the x direction.

[0107] The rear surface third portion 323 is disposed so as to overlap the recess 3221 when viewed in both the x direction and the y direction. The shape of the rear surface third portion 323 is not particularly limited, and is rectangular in the illustrated example.

[0108] The connecting portion 33 of this embodiment includes a first connecting portion 331, a second connecting portion 332, a third connecting portion 333, a fourth connecting portion 334, and a connecting portion 335. The first connecting portion 331 connects the main surface first portion 311 and the back surface first portion 321. The fourth connecting portion 334 connects the main surface fourth portion 314 and the back surface fourth portion 324. The third connecting portion 333 connects the main surface third portion 313 and the back surface third portion 323. The fourth connecting portion 334 connects the main surface fourth portion 314 and the back surface fourth portion 324. The connecting portion 335 connects the main surface fifth portion 315 and the back surface portion 325.

[0109] As shown in FIG. 1, the plurality of second connecting portions 332 are connected to a portion of the main surface second portion 312 on the fourth surface 26 side in the y direction.

[0110] This embodiment also makes it possible to reduce the inductance component. Furthermore, in this embodiment, the current IL flows through a path formed by the first wire 71, the semiconductor laser element 4, the main surface third portion 313, the capacitor 6, the main surface fifth portion 315, the connecting portion 335, and the back surface second portion 322. This path forms a loop when viewed in the x-direction. Therefore, the conduction path of the current IL can be made shorter than when most of the conduction path of the current IL is formed on the same plane.

[0111] Furthermore, since the second connecting portion 332 is disposed closer to the fourth surface 26 in the y direction, the distance in the y direction between the second connecting portion 332 and the connecting portion 335 can be shortened. This is advantageous for shortening the conduction path of the current IL.

[0112] <First Modification of Third Embodiment> Fig. 32 is a plan view of a main part showing a first modified example of the semiconductor laser device A3. Fig. 33 is a bottom view showing the first modified example of the semiconductor laser device A3. The semiconductor laser device A31 of this modified example differs from the above-described semiconductor laser device A3 in that it includes two semiconductor laser elements 4.

[0113] This modification also makes it possible to reduce the inductance component. Furthermore, by providing two semiconductor laser elements 4, it is possible to achieve higher brightness.

[0114] <Fourth embodiment> FIG. 34 is a plan view of a main portion of a semiconductor laser device according to a fourth embodiment of the present disclosure. FIG. 35 is a plan view of a main portion of a semiconductor laser device according to the fourth embodiment of the present disclosure. FIG. 36 is a bottom view of a semiconductor laser device according to the fourth embodiment of the present disclosure. FIG. 37 is a cross-sectional view taken along line XXXVII-XXXVII in FIG. 34. In a semiconductor laser device A4 of this embodiment, a conductive portion 3 has a main surface portion 31, a back surface portion 32, a connecting portion 33, and an intermediate portion 34. Note that the semiconductor laser element 4, the switching element 5, the main surface portion 31, and a first layer 2A, which will be described later, are omitted in FIG. 35.

[0115] The arrangement of first main surface portion 311, second main surface portion 312, third main surface portion 313, and fourth main surface portion 314 of main surface portion 31 is the same as that of semiconductor laser device A3 described above. The arrangement of first back surface portion 321, second back surface portion 322, third back surface portion 323, and fourth back surface portion 324 is the same as that of semiconductor laser device A2 described above.

[0116] The base material 2 of this embodiment is composed of a first layer 2A and a second layer 2B. The first layer 2A and the second layer 2B are stacked on top of each other in the z direction. The first layer 2A forms a main surface 21. The second layer 2B forms a back surface 22.

[0117] The intermediate portion 34 is disposed on the main surface 21B of the second layer 2B and is sandwiched between the first layer 2A and the second layer 2B. The intermediate portion 34 includes a first intermediate portion 341, a second intermediate portion 342, a third intermediate portion 343, and a fourth intermediate portion 344. The arrangement of the first intermediate portion 341, the second intermediate portion 342, the third intermediate portion 343, and the fourth intermediate portion 344 is similar to the arrangement of the first back surface portion 321, the second back surface portion 322, the third back surface portion 323, and the fourth back surface portion 324.

[0118] In this embodiment, the first connecting portion 331 connects the main surface first portion 311, the back surface first portion 321, and the intermediate first portion 341 to one another. The second connecting portion 332 connects the main surface second portion 312, the back surface second portion 322, and the intermediate second portion 342 to one another. The third connecting portion 333 connects the main surface third portion 313, the back surface third portion 323, and the intermediate third portion 343 to one another. The fourth connecting portion 334 connects the main surface fourth portion 314, the back surface fourth portion 324, and the intermediate fourth portion 344 to one another.

[0119] 35 and 37, in capacitor 6, electrode 61 is conductively joined to third intermediate portion 343, and electrode 62 is conductively joined to second intermediate portion 342. Also, first layer 2A has housing portion 25A formed therein. Housing portion 25A is a portion capable of housing two capacitors 6. In the illustrated example, sealing resin 29 is filled between housing portion 25A and capacitor 6.

[0120] This embodiment also makes it possible to reduce the inductance component. Furthermore, by mounting the capacitor 6 in the intermediate portion 34, it is possible to configure the switching element 5 and the capacitor 6 to overlap when viewed in the z direction, for example. This allows the dimensions of the semiconductor laser device A4 in the x and y directions to be reduced.

[0121] The path of the current IL is configured such that the back surface second portion 322 and the intermediate second portion 342 form a parallel path, and the back surface third portion 323 and the intermediate third portion 343 form a parallel path. This makes it possible to reduce the resistance and inductance of the path of the current IL.

[0122] <First Modification of Fourth Embodiment> Fig. 38 is a plan view of a main portion showing a first modified example of the semiconductor laser device A4. Fig. 39 is a plan view of a main portion showing a first modified example of the semiconductor laser device A4. Fig. 40 is a bottom view of a first modified example of the semiconductor laser device A4. The semiconductor laser device A41 of this modified example has a layout configuration of the main surface portion 31 and the back surface portion 32 similar to that of the semiconductor laser device A3 described above. The semiconductor laser element 4, the switching element 5, and the capacitor 6 are arranged on the main surface portion 31.

[0123] The intermediate portion 34 of this embodiment has a first intermediate portion 341, a second intermediate portion 342, a third intermediate portion 343, and a fourth intermediate portion 344. The arrangement of the first intermediate portion 341, the second intermediate portion 342, the third intermediate portion 343, and the fourth intermediate portion 344 is similar to the arrangement of the first back surface portion 321, the second back surface portion 322, the third back surface portion 323, and the fourth back surface portion 324 of the back surface portion 32. In this embodiment as well, the second connecting portion 332 is connected to a portion of the second main surface portion 312 on the fourth surface 26 side in the y direction.

[0124] This embodiment also makes it possible to reduce the inductance component. Furthermore, by providing the intermediate portion 34 with the same configuration as the rear surface portion 32, it is possible to reduce the resistance and inductance of the path of the current IL and to reduce the size of the semiconductor laser device A41.

[0125] Fifth Embodiment FIG. 41 is a plan view of a main portion of a semiconductor laser device according to the fifth embodiment of the present disclosure. FIG. 42 is a bottom view of a semiconductor laser device according to the fifth embodiment of the present disclosure. FIG. 43 is a cross-sectional view taken along line XLIII-XLIII in FIG. 41. The semiconductor laser device A5 of this embodiment differs from the above-described embodiments mainly in the configuration of the connecting portion 33. Note that the above-described semiconductor laser devices A1 to A41 can be appropriately modified to have the same configuration as the connecting portion 33 of this embodiment.

[0126] The arrangement of the main surface portion 31, the back surface portion 32, the semiconductor laser element 4, the switching element 5, the capacitor 6, the first wire 71, the second wire 72, and the third wire 73 in this embodiment is similar to that of the semiconductor laser device A1 described above.

[0127] 41 , in this embodiment, the main surface first portion 311 reaches the second surface 24 and the third surface 25. The main surface second portion 312 reaches the first surface 23 and the second surface 24. The main surface third portion 313 reaches the first surface 23, the second surface 24, and the fourth surface 26. The main surface fourth portion 314 reaches the first surface 23 and the third surface 25.

[0128] 42 , in this embodiment, the back surface first portion 321 reaches the second surface 24 and the third surface 25. The back surface second portion 322 reaches the first surface 23 and the second surface 24. The back surface third portion 323 reaches the first surface 23, the second surface 24, and the fourth surface 26. The back surface fourth portion 324 reaches the first surface 23 and the third surface 25.

[0129] 43 , the connecting portion 33 of this embodiment is provided by forming a metal plating layer on the inner surface of a groove along the z direction provided in the base material 2. Therefore, the connecting portion 33 of this embodiment is in contact with any of the first surface 23, the second surface 24, the third surface 25, and the fourth surface 26.

[0130] The plurality of first connecting portions 331 connect the main surface first portion 311 and the back surface first portion 321. The plurality of first connecting portions 331 are arranged side by side along the third surface 25 in the x direction.

[0131] The plurality of second connecting portions 332 connect the main surface second portion 312 and the back surface second portion 322. The plurality of second connecting portions 332 are arranged separately on both sides in the x direction. Some of the second connecting portions 332 are arranged side by side in the y direction along the first surface 23. Others of the second connecting portions 332 are arranged side by side in the y direction along the second surface 24.

[0132] The plurality of third connecting portions 333 connect the main surface third portion 313 and the back surface third portion 323. The plurality of third connecting portions 333 are arranged side by side along the fourth surface 26 in the x direction.

[0133] The fourth connecting portion 334 connects the fourth main surface portion 314 and the fourth back surface portion 324. The fourth connecting portion 334 is in contact with the third surface 25.

[0134] This embodiment also makes it possible to reduce the inductance component, and provides the same effects as the semiconductor laser device A1 described above.

[0135] <First Modification of Fifth Embodiment> Fig. 44 is a plan view of a main part showing a first modified example of the semiconductor laser device A5, and Fig. 45 is a bottom view showing the first modified example of the semiconductor laser device A5.

[0136] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 of the semiconductor laser device A51 of this modification is similar to that of the semiconductor laser device A11 described above. The configurations of the first connecting portion 331, second connecting portion 332, third connecting portion 333, and fourth connecting portion 334 of the connecting portion 33 are similar to those of the semiconductor laser device A5.

[0137] This modification also makes it possible to reduce the inductance component, and provides the same effects as the semiconductor laser device A11 described above.

[0138] <Second Modification of Fifth Embodiment> Fig. 46 is a plan view of a main part showing a second modified example of the semiconductor laser device A5, and Fig. 47 is a bottom view showing the second modified example of the semiconductor laser device A5.

[0139] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 of the semiconductor laser device A52 of this modification is similar to that of the semiconductor laser device A12 described above. The configurations of the first connecting portion 331, second connecting portion 332, third connecting portion 333, and fourth connecting portion 334 of the connecting portion 33 are similar to those of the semiconductor laser device A5 and the semiconductor laser device A51.

[0140] In this modification, the multiple third connecting portions 333 do not overlap with the two semiconductor laser elements 4 when viewed in the y direction, but are provided at positions retracted from the two semiconductor laser elements 4. In addition, the third connecting portions 333 overlap with the capacitor 6 when viewed in the y direction.

[0141] This modification also makes it possible to reduce the inductance component, and provides the same effects as the semiconductor laser device A12 described above.

[0142] <Third Modification of Fifth Embodiment> Fig. 48 is a plan view of a main part illustrating a third modified example of the semiconductor laser device according to the fifth embodiment of the present disclosure, and Fig. 49 is a bottom view illustrating the third modified example of the semiconductor laser device according to the fifth embodiment of the present disclosure.

[0143] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 of the semiconductor laser device A53 of this modification is similar to that of the semiconductor laser device A14 described above. The configurations of the first connecting portion 331, second connecting portion 332, third connecting portion 333, and fourth connecting portion 334 of the connecting portion 33 are similar to those of the semiconductor laser devices A5, A51, and A52.

[0144] In this modification, one of the multiple third connecting portions 333 overlaps with the semiconductor laser element 4 when viewed in the y direction. The other two third connecting portions 333 overlap with the capacitor 6 when viewed in the y direction.

[0145] This modification also makes it possible to reduce the inductance component, and provides the same effects as the semiconductor laser device A14 described above.

[0146] <Fourth Modification of Fifth Embodiment> Fig. 50 is a plan view of a main part showing a fourth modified example of the semiconductor laser device A5, and Fig. 51 is a bottom view showing the fourth modified example of the semiconductor laser device A5.

[0147] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 of the semiconductor laser device A54 of this modification is similar to that of the semiconductor laser device A13 described above. The configurations of the first connecting portion 331, second connecting portion 332, third connecting portion 333, and fourth connecting portion 334 of the connecting portion 33 are similar to those of the semiconductor laser devices A5, A51, A52, and A53.

[0148] In this modification, one of the multiple third connecting portions 333 overlaps two semiconductor laser elements 4 when viewed in the y direction. The other two third connecting portions 333 overlap the capacitor 6 when viewed in the y direction.

[0149] This modification also makes it possible to reduce the inductance component, and provides the same effects as the semiconductor laser device A13 described above.

[0150] Sixth Embodiment Fig. 52 is a plan view of a main part of a semiconductor laser device according to a sixth embodiment of the present disclosure, and Fig. 53 is a bottom view of the semiconductor laser device according to the sixth embodiment of the present disclosure.

[0151] The semiconductor laser device A6 of this embodiment has a similar arrangement to that of the semiconductor laser device A2 described above in terms of the principal surface 31, rear surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73. The arrangement of the first connecting portion 331, second connecting portion 332, third connecting portion 333, and fourth connecting portion 334 of the connecting portion 33 is similar to that of the semiconductor laser device A5, etc.

[0152] In this embodiment, two third connecting portions 333 are arranged spaced apart in the x direction. The two third connecting portions 333 overlap with the two capacitors 6 when viewed in the y direction, but do not overlap with the semiconductor laser element 4. In other words, the semiconductor laser element 4 is located between the two third connecting portions 333 in the x direction.

[0153] This embodiment also makes it possible to reduce the inductance component, and provides the same effects as the semiconductor laser device A2 described above.

[0154] <First Modification of Sixth Embodiment> Fig. 54 is a plan view of a main part showing a first modified example of the semiconductor laser device A6, and Fig. 55 is a bottom view of a main part showing the first modified example of the semiconductor laser device A6.

[0155] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 of the semiconductor laser device A61 of this modification is similar to that of the semiconductor laser device A21 described above. The configurations of the first connecting portion 331, second connecting portion 332, third connecting portion 333, and fourth connecting portion 334 of the connecting portion 33 are similar to those of the semiconductor laser device A6.

[0156] In this modification, two third connecting portions 333 are arranged spaced apart in the x direction. The two third connecting portions 333 overlap with two capacitors 6 when viewed in the y direction, but do not overlap with the semiconductor laser element 4 or the recess 261. In other words, the semiconductor laser element 4 and the recess 261 are located between the two third connecting portions 333 in the x direction.

[0157] This modification also makes it possible to reduce the inductance component, and provides the same effects as the semiconductor laser device A21 described above.

[0158] Seventh Embodiment Fig. 56 is a plan view of a main part of a semiconductor laser device according to a seventh embodiment of the present disclosure, and Fig. 57 is a bottom view of the semiconductor laser device according to the seventh embodiment of the present disclosure.

[0159] The semiconductor laser device A7 of this embodiment has a similar arrangement to that of the semiconductor laser device A3 described above in terms of the principal surface 31, rear surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73. The arrangement of the first connecting portion 331, second connecting portion 332, third connecting portion 333, and fourth connecting portion 334 of the connecting portion 33 is similar to that of the semiconductor laser devices A6, A61, etc.

[0160] In this embodiment, the connecting portion 33 further includes a connecting portion 335. The connecting portion 335 connects the fifth principal surface portion 315 and the second rear surface portion 322. Two of the connecting portions 335 overlap two of the capacitors 6 when viewed in the y direction. The other connecting portion 335 does not overlap any of the capacitors 6 when viewed in the y direction. The third connecting portion 333 is provided only on the side opposite the semiconductor laser element 4 in the x direction.

[0161] This embodiment also makes it possible to reduce the inductance component, and achieves the same effects as the semiconductor laser device A3 described above. Moreover, since the third connecting portion 333 is provided only on the side opposite to the semiconductor laser element 4 in the x direction, the semiconductor laser element 4 can be brought closer to the first surface 23, and interference of the laser light L from the semiconductor laser element 4 with the support member 1 can be suppressed.

[0162] <Seventh embodiment, first modified example> Fig. 58 is a plan view of a main part showing a first modified example of the semiconductor laser device A7, and Fig. 59 is a bottom view showing the first modified example of the semiconductor laser device A7.

[0163] The arrangement of the main surface 31, back surface 32, semiconductor laser element 4, switching element 5, capacitor 6, first wire 71, second wire 72, and third wire 73 of the semiconductor laser device A71 of this modification is similar to that of the semiconductor laser device A31 described above. The configurations of the first connecting portion 331, second connecting portion 332, third connecting portion 333, fourth connecting portion 334, and connecting portion 335 of the connecting portion 33 are similar to those of the semiconductor laser device A7.

[0164] When viewed in the y direction, two of the connecting portions 335 overlap with two of the capacitors 6. When viewed in the y direction, the other connecting portion 335 does not overlap with any of the capacitors 6.

[0165] In this modified example, two third connecting portions 333 are provided only on the side opposite in the x direction to the two semiconductor laser elements 4. The two third connecting portions 333 are aligned in the y direction.

[0166] This modification also makes it possible to reduce the inductance component, and achieves the same effects as the semiconductor laser device A31 described above. Moreover, since the third connecting portion 333 is provided only on the side opposite to the semiconductor laser element 4 in the x direction, the semiconductor laser element 4 can be brought closer to the first surface 23, and interference of the laser light L from the semiconductor laser element 4 with the support member 1 can be suppressed.

[0167] The semiconductor laser device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor laser device according to the present disclosure can be freely modified in various ways.

[0168] The present disclosure includes configurations relating to the following notes.

[0169] [Appendix 1] a semiconductor laser element; a switching element having a gate electrode, a source electrode, and a drain electrode; a support member having a conductive portion that forms a conduction path to the switching element and the semiconductor laser element, and supporting the semiconductor laser element and the switching element; Equipped with the conductive portion has a first portion spaced apart from the semiconductor laser element, one or more first wires connected to the source electrode of the switching element and the semiconductor laser element; and one or more second wires connected to the source electrode of the switching element and the first portion of the conductive portion. [Appendix 2] 2. The semiconductor laser device according to claim 1, wherein the electrical resistance of one or more of the first wires is smaller than the electrical resistance of one or more of the second wires. [Appendix 3] the first wire and the second wire are made of the same material, 3. The semiconductor laser device according to claim 2, further comprising a plurality of the first wires, the number of the plurality of first wires being greater than the number of the one or more second wires. [Appendix 4] the switching element has an element body made of a semiconductor material; the element body has an element main surface and an element back surface facing opposite to each other in a first direction which is a thickness direction, the gate electrode and the source electrode are disposed on the main surface of the element, 4. The semiconductor laser device according to claim 1, wherein the drain electrode is disposed on a rear surface of the element. [Appendix 5] the semiconductor laser element has a first laser electrode arranged on a side toward which the element principal surface faces in the first direction, and a second laser electrode arranged on a side toward which the element rear surface faces, 5. The semiconductor laser device according to claim 4, wherein the first wire is connected to the first laser electrode. [Appendix 6] 6. The semiconductor laser device according to claim 5, wherein the support member has a base having a main surface and a back surface facing opposite to each other in the first direction. [Appendix 7] 7. The semiconductor laser device according to claim 6, wherein the conductive portion has a main surface portion disposed on the main surface and a back surface portion disposed on the back surface. [Appendix 8] 8. The semiconductor laser device according to claim 7, wherein the conductive portion includes a plurality of connecting portions that electrically connect the main surface portion and the back surface portion. [Appendix 9] 9. The semiconductor laser device according to claim 8, wherein the main surface portion includes a main surface first portion as the first portion. [Appendix 10] 10. The semiconductor laser device according to claim 9, wherein the main surface portion includes a second main surface portion to which the drain electrode of the switching element is conductively joined. [Appendix 11] 11. The semiconductor laser device according to claim 10, wherein the main surface portion includes a main surface third portion to which the second laser electrode of the semiconductor laser element is conductively joined. [Appendix 12] the main surface portion includes a fourth main surface portion, 12. The semiconductor laser device according to claim 11, further comprising a third wire connected to the gate electrode and the fourth main surface portion. [Appendix 13] 13. The semiconductor laser device according to claim 12, further comprising a capacitor electrically interposed between the second principal surface portion and the third principal surface portion. [Appendix 14] 14. The semiconductor laser device according to claim 13, wherein the capacitor is electrically connected to the second main surface portion and the third main surface portion. [Appendix 15] The semiconductor laser device of claim 14, wherein the back surface portion includes a back surface first portion conductive to the main surface first portion, a back surface second portion conductive to the main surface second portion, a back surface third portion conductive to the main surface third portion, and a back surface fourth portion conductive to the main surface fourth portion. [Appendix 16] the main surface portion includes a fifth main surface portion, 14. The semiconductor laser device according to claim 13, wherein the capacitor is electrically connected to the third main surface portion and the fifth main surface portion. [Appendix 17] The semiconductor laser device of claim 16, wherein the back surface portion includes a back surface first portion conductive to the main surface first portion, a back surface second portion conductive to the main surface second portion and the main surface fifth portion, a back surface third portion conductive to the main surface third portion, and a back surface fourth portion conductive to the main surface fourth portion. [Appendix 18] 12. The semiconductor laser device of claim 11, further comprising a diode that is electrically connected in series between the first main surface portion and the third main surface portion and that allows current to flow from the third main surface portion to the first main surface portion. [Appendix 19] 19. The semiconductor laser device according to claim 18, wherein the diode is mounted on the first main surface portion.

Claims

1. a semiconductor laser element; a switching element having a gate electrode, a source electrode, and a drain electrode; a second conductive portion on one side of which the switching element is disposed in a first direction; a third conductive section in which the semiconductor laser element is disposed on the one side in the first direction, the second conductive portion and the third conductive portion are spaced apart in a second direction intersecting the first direction, the second conductive portion has a second recess that is recessed toward the other side of the second conductive portion that is opposite to the one side on which the third conductive portion is located in the second direction, the third conductive portion has a third convex portion that protrudes toward the other side in the second direction, the third convex portion and the second concave portion overlap with each other when viewed in the second direction, At least a portion of the semiconductor laser element is disposed on the third convex portion.

2. a base material that supports the second conductive portion and the third conductive portion from the other side in the first direction, the substrate has a substrate recess located on the one side in the second direction with respect to the third conductive portion and recessed to the other side in the second direction, the third conductive portion has a third recess recessed toward the other side in the second direction, The semiconductor laser device according to claim 1 , wherein the substrate recess and the third recess overlap with the second recess, the third protrusion, and the semiconductor laser element when viewed in the second direction.

3. The laser diode includes two of the semiconductor laser elements, 3. The semiconductor laser device according to claim 1, wherein at least a portion of each of the two semiconductor laser elements is disposed on the third convex portion.

4. a first conductive portion spaced apart from the second conductive portion and the third conductive portion; 4. The semiconductor laser device according to claim 1, further comprising: one or more second wires connecting said source electrode and said first conductive portion.

5. 5. The semiconductor laser device according to claim 4, further comprising: a diode that allows current to flow from the third conductive portion to the first conductive portion.

6. a light-transmitting resin covering the semiconductor laser element; 3. The semiconductor laser device according to claim 2, wherein the recessed portion of the substrate is filled with a part of the light-transmitting resin.

7. The semiconductor laser device according to claim 5 , wherein the diode is disposed on the first conductive portion.

8. two capacitors each electrically conductively connected to the second conductive portion and the third conductive portion; 7. The semiconductor laser device according to claim 1, wherein the semiconductor laser element is located between the two capacitors in a third direction intersecting the first direction and the second direction.

9. 9. The semiconductor laser device according to claim 1, further comprising one or more first wires connected to the source electrode and the semiconductor laser element.

10. a fourth conductive portion spaced apart from the second conductive portion and the third conductive portion; 10. The semiconductor laser device according to claim 1, further comprising: a third wire connected to said gate electrode and said fourth conductive portion.

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