RF tuning system including tuning circuit having impedance for setting and adjusting parameter of electrode in electrostatic chuck

Abstract

SOLUTION: A substrate processing system for processing a substrate within a processing chamber is provided and includes a power source terminal, a substrate support, and a tuning circuit. The substrate support holds the substrate, and includes first and second electrodes which receive power from a power source via the power source terminal. The tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is allocated for tuning signals provided to the first electrode. The tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is serially connected between the first electrode and the power source and receives a first signal from the power source via the power source terminal. The second impedance set is connected between output of the power source and a reference terminal and receives the first signal from the power source via the power source terminal.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims priority to U.S. Patent Application No. 16 / 052,877, filed August 2, 2018, the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure relates to electrical holding devices that use electrostatic attraction, and in particular to tuning circuits for clamping electrodes and radio frequency (RF) electrodes of electrical holding devices. [Background technology]

[0003] The background art provided herein is intended to provide a general background to the present disclosure, and the work of the inventors named herein, to the extent described in this background art, along with aspects of the description that would not normally be considered prior art at the time of filing, are not admitted expressly or impliedly as prior art to the present disclosure.

[0004] Substrate processing systems may be utilized to perform etching, deposition, and / or other processes on substrates, such as semiconductor wafers. Examples of processes that may be performed on a substrate include, but are not limited to, plasma-enhanced chemical vapor deposition (PECVD) processes, physical vapor deposition (PVD) processes, ion implantation processes, and / or other etching, deposition, and cleaning processes. As an example, during an etching process, the substrate may be placed on an electrostatic chuck (ESC) in the substrate processing system, and a thin film on the substrate is etched. Summary of the Invention

[0005] A substrate processing system for processing a substrate in a processing chamber is provided. The substrate processing system includes a power supply terminal, a substrate support, and a tuning circuit. The substrate support is configured to hold a substrate. The substrate support includes an electrode. The electrode includes a first electrode and a second electrode. The first electrode and the second electrode receive power from a first power supply via the power supply terminal. The first tuning circuit is connected to at least one of the first electrode and the second electrode. The first tuning circuit is assigned to adjust one or more signals provided to the first electrode. The first tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is connected in series between the first electrode and the first power supply. The first impedance set receives a first signal from the first power supply via the power supply terminal. The one or more signals include the first signal. The second impedance set is connected between an output of the first power supply and a reference terminal. The second impedance set receives the first signal from the first power supply via the power supply terminal.

[0006] In another feature, the first tuning circuit comprises a first impedance set and a second impedance set. In another feature, the substrate processing system further comprises a system controller configured to adjust the values ​​of the impedances of the first impedance set and the values ​​of the impedances of the second impedance set.

[0007] In another feature, the first tuning circuit adjusts the voltage, current level, phase, power level, and / or frequency of one or more signals provided to the first electrode. In another feature, the first tuning circuit comprises a first impedance set and a second impedance set. The second impedance set is connected between the first impedance set and a reference terminal.

[0008] In another feature, the first power supply includes a matching network connected between the first power supply and the power supply terminal, and the first tuning circuit connected between the power supply terminal and the first electrode.

[0009] In another feature, the first tuning circuit is not included in a matching network. In another feature, no matching network is connected between the first power supply and the first tuning circuit.

[0010] In another feature, the substrate processing system further comprises a second tuning circuit configured to adjust a voltage, current level, phase, power level, or frequency of a first signal provided from the first power supply to the first electrode, and the second tuning circuit configured to adjust a voltage, current level, phase, power level, or frequency of the first signal provided from the first power supply to the second electrode, and the one or more signals include the first signal.

[0011] In another feature, the substrate processing system further comprises a second power supply and a second tuning circuit. The first tuning circuit is configured to adjust a voltage, current level, phase, power level, or frequency of a first signal provided from the first power supply to the first electrode. The second tuning circuit is configured to adjust a voltage, current level, phase, power level, or frequency of a second signal provided from the second power supply to the second electrode. The one or more signals include the first signal and the second signal.

[0012] In another feature, the electrodes of the substrate support are concentrically arranged.

[0013] In another feature, the substrate processing system further includes a second tuning circuit and a third tuning circuit. The electrode includes a third electrode. The first tuning circuit is connected to the first electrode and configured to modulate a first signal before being received by the first electrode. The second tuning circuit is connected to the second electrode and configured to modulate the first signal or the second signal before being received by the second electrode. The third tuning circuit is connected to the third electrode and configured to modulate the first signal or the third signal before being received by the third electrode. In another feature, the first electrode, the second electrode, and the third electrode are concentrically arranged.

[0014] In another feature, the substrate support is an electrostatic chuck, the first electrode and the second electrode are clamping electrodes and configured to receive a clamping voltage to clamp the substrate to the substrate support, the third electrode is a biasing electrode and configured to receive a bias voltage, and the third signal is received from a third power supply by a third tuning circuit.

[0015] In another feature, the substrate support is an electrostatic chuck, the first electrode is a clamping electrode, the second electrode and the third electrode are bias electrodes, and the second signal is received from a second power supply by a second tuning circuit.

[0016] In another feature, the substrate support is an electrostatic chuck. The first electrode is a clamping electrode. The second electrode is a clamping electrode. The electrode includes an electrode ring. The first tuning circuit comprises a first impedance set, a third impedance set, and a fourth impedance set. The first impedance set comprises a first inductor and a first capacitor connected between the first clamping electrode and a first power supply. The third impedance set comprises a second inductor and a second capacitor connected between the electrode ring and the first power supply. The fourth impedance set comprises a third inductor and a third capacitor connected between the second clamping electrode and the first power supply.

[0017] In another feature, the substrate support is an electrostatic chuck. The first electrode is a clamping electrode. The second electrode is a clamping electrode. The electrode includes an electrode ring. The first tuning circuit includes a second impedance set, a third impedance set, and a fourth impedance set. The second impedance set includes a first inductor and a first capacitor connected in parallel between a first electrode terminal and a reference terminal, and the first electrode terminal is connected between the first clamping electrode and a first power supply. The third impedance set includes a second inductor and a second capacitor connected in parallel between the second electrode terminal and the reference terminal. The second electrode terminal is connected between the electrode ring and the first power supply. The fourth impedance set includes a third inductor and a third capacitor connected in parallel between the third electrode terminal and the reference terminal. The third electrode terminal is connected between the second clamping electrode and the first power supply.

[0018] In another feature, the substrate support is an electrostatic chuck. The first electrode is a clamp electrode. The second electrode is a clamp electrode. The electrode includes an electrode ring. The first tuning circuit includes a first impedance set, a second impedance set, a third impedance set, a fourth impedance set, a fifth impedance set, and a sixth impedance set. The first impedance set includes a first inductor and a first capacitor connected between the first clamp electrode and a first power supply. The third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the first power supply. The fourth impedance set includes a third inductor and a third capacitor connected between the second clamp electrode and the first power supply. The second impedance set includes a fourth inductor and a fourth capacitor connected in parallel between the first electrode terminal and a reference terminal. The first electrode terminal is connected between the first clamp electrode and the first power supply. The fifth impedance set includes a fifth inductor and a fifth capacitor connected in parallel between the second electrode terminal and the reference terminal. The second electrode terminal is connected between the electrode ring and the first power supply. The sixth impedance set includes a sixth inductor and a sixth capacitor connected in parallel between the third electrode terminal and a reference terminal, the third electrode terminal being connected between the second clamping electrode and the first power supply.

[0019] In another feature, the substrate processing system further comprises a second power supply coupled to the first terminal, the second terminal, and the third terminal.

[0020] In another feature, the substrate processing system further includes a second tuning circuit. The substrate support is an electrostatic chuck. The first electrode is a first clamp electrode. The second electrode is a second clamp electrode. The electrode includes an electrode ring. The first tuning circuit includes a first impedance set, a third impedance set, and a fourth impedance set. The second tuning circuit includes a second impedance set, a fifth impedance set, and a sixth impedance set. The first impedance set includes a first inductor and a first capacitor connected between the first clamp electrode and a first power supply. The third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the second power supply. The fourth impedance set includes a third inductor and a third capacitor connected between the second clamp electrode and the first power supply. The second impedance set includes a fourth inductor and a fourth capacitor connected in parallel between the first electrode terminal and a reference terminal. The first electrode terminal is connected between the first clamp electrode and the first power supply. The fifth impedance set includes a fifth inductor and a fifth capacitor connected in parallel between the second electrode terminal and a reference terminal. The second electrode terminal is connected between the electrode ring and the second power supply. The sixth impedance set includes a sixth inductor and a sixth capacitor connected in parallel between the third electrode terminal and the reference terminal. The third electrode terminal is connected between the second clamping electrode and the first power supply.

[0021] In another feature, no matching network is connected between the power supply terminal and the electrode. In another feature, power from the first power supply is split to provide a portion of the power to each of the electrodes. In another feature, the first impedance set and the second impedance set comprise variable inductances.

[0022] In another feature, the substrate processing system further comprises a processing chamber, a first power supply, and a controller, wherein the controller is configured to adjust the impedances of the first impedance set and the second impedance set.

[0023] In another feature, a substrate processing system for processing a substrate in a processing chamber is provided. The substrate processing system includes a substrate support, a first impedance, and a second impedance. The substrate support is configured to hold a substrate, the substrate support including electrodes. The electrodes include a first electrode, a second electrode, and a third electrode. The first impedance is connected between the first electrode and the third electrode. The second impedance is connected between the second electrode and the third electrode. The first impedance is connected (i) between the first electrode and the second impedance and (ii) between a first power supply and the second impedance. The second impedance is connected (i) between the second electrode and the first impedance and (ii) between the second power supply and the first impedance. The first impedance and the second impedance are assigned to adjust (i) a first signal provided to the first electrode by the first power supply and (ii) a second signal provided to the second electrode by the second power supply.

[0024] In another feature, the first impedance is connected in series with the second impedance. In another feature, the first impedance is connected between the first electrode and a third power source. The second impedance is connected between the second electrode and a third power source. In another feature, the third power source is connected to the third electrode.

[0025] In another feature, the substrate processing system further comprises a third impedance and a fourth impedance. The third impedance is connected (i) between the first electrode and the third electrode, (ii) between the first electrode and the fourth impedance, and (iii) between the first power supply and the fourth impedance. The fourth impedance is connected (i) between the second electrode and the third electrode, (ii) between the second electrode and the third impedance, and (iii) between the second power supply and the third impedance. The third impedance and the fourth impedance are assigned to adjust (i) a first signal provided by the first power supply to the first electrode and (ii) a second signal provided by the second power supply to the second electrode.

[0026] In another feature, the first impedance and the third impedance are connected in parallel between the first electrode and the third power source. The second impedance and the fourth impedance are connected in parallel between the second electrode and the third power source. In another feature, the third power source is connected to the third electrode. In another feature, the first impedance set and the second impedance set comprise variable inductances.

[0027] In another feature, the substrate processing system further comprises a processing chamber, a first power supply, and a controller, wherein the controller is configured to adjust the impedances of the first impedance set and the second impedance set.

[0028] In another aspect, a method for operating a substrate processing system is provided. The method includes selecting a process, determining a recipe including system operating parameters for the selected process, controlling an actuator to set the system operating parameters, and setting an impedance value of a first tuning circuit based on the selected process and the system operating parameters. The first tuning circuit is connected to a first electrode in a substrate support. The first tuning circuit is assigned to adjust a signal supplied to the first electrode. The first tuning circuit includes at least one of a first impedance set connected in series between the first electrode and a first power supply, the first impedance set receiving a first signal from the first power supply, and one or more signals including the first signal, or a second impedance set connected between an output of the first power supply and a reference terminal. The second impedance set receives the first signal from the first power supply. The method further includes placing a substrate on the substrate support in a processing chamber and performing a processing operation for the selected process, including supplying power from the first power supply to an electrode in the substrate support. The electrode includes a first electrode and a second electrode. The first electrode and the second electrode receive power from a first power source via the power source terminals.

[0029] In another feature, the method further comprises adjusting an impedance value of the first tuning circuit while performing the processing operations. In another feature, the method further comprises collecting sensor output data while performing the processing operations, determining one or more parameters based on the sensor output data, and adjusting the impedance value of the first tuning circuit based on the one or more parameters.

[0030] In another feature, the method further comprises determining a characteristic or property of the processing chamber and setting an impedance value of the first tuning circuit based on the characteristic or property.

[0031] In another feature, the method further comprises determining a characteristic or property of the substrate support and setting an impedance value of the first tuning circuit based on the characteristic or property.

[0032] In another feature, the method further comprises adjusting the impedances of at least one of the first impedance set or the second impedance set to follow a respective trajectory based on the change in the characteristic. In another feature, the method further comprises calculating or determining the trajectory based on at least one of the characteristic, the property, one or more other features of the substrate, the substrate support, or the processing chamber, and one or more other characteristics of the substrate, the substrate support, or the processing chamber.

[0033] In another feature, the method further comprises determining a characteristic or property of the substrate and setting an impedance value of the first tuning circuit based on the characteristic or property.

[0034] In another feature, the method further comprises supplying a clamping voltage to the first electrode by a first power supply to clamp the substrate to the substrate support, supplying a bias voltage to the second electrode, and adjusting the clamping voltage and the bias voltage by a first tuning circuit or a second tuning circuit. The substrate support is an electrostatic chuck. In another feature, the first tuning circuit comprises a first impedance and a second impedance.

[0035] In another feature, the method further comprises adjusting a value of impedance of the first tuning circuit to adjust a clamp voltage supplied to the first electrode and adjusting a value of impedance of the second tuning circuit to adjust a bias voltage supplied to the second electrode. The substrate support is an electrostatic chuck. In another feature, the method further comprises adjusting a potential difference of the plasma at each pair of points above and along a surface of the substrate support by adjusting a value of impedance of the first tuning circuit.

[0036] In another feature, the method further comprises adjusting an impedance value in a bias RF matching network based on the impedance value of the first tuning circuit, the bias RF matching network being connected between the power supply and the first tuning circuit.

[0037] In another feature, a substrate processing system for processing a substrate in a processing chamber is provided. The substrate processing system includes a power terminal, a substrate support, a first tuning circuit, and a second tuning circuit. The substrate support is configured to hold a substrate. The substrate support includes an electrode. The electrode includes a first electrode and a second electrode. The first tuning circuit is connected to the first electrode and assigned to adjust the impedance of the first electrode. The first tuning circuit includes a first impedance set connected to the first electrode and ground. The second tuning circuit is connected to the second electrode and assigned to adjust the impedance of the second electrode. The second tuning circuit includes a second impedance set connected to the second electrode and ground.

[0038] In another feature, the first tuning circuit is connected in series between the first electrode and ground. In another feature, the first tuning circuit comprises an inductor and a capacitor. In another feature, the second tuning circuit is connected in series between the second electrode and ground. In another feature, the second tuning circuit comprises an inductor and a capacitor. In another feature, the first tuning circuit is connected between the first electrode and the second electrode. The first electrode and the second electrode are connected to ground.

[0039] In another feature, the substrate processing system further includes a third electrode connected to ground and a third tuning circuit connected between the second electrode and the third electrode. In another feature, the first tuning circuit includes a first inductor and a first capacitor. The second tuning circuit includes a second inductor and a second capacitor.

[0040] In another feature, the first tuning circuit and the second tuning circuit comprise variable inductances. In another feature, the substrate processing system further comprises a processing chamber and a controller configured to adjust the impedances of the first impedance set and the second impedance set.

[0041] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief explanation of the drawings]

[0042] The present disclosure will become more fully understood from the detailed description and accompanying drawings set forth below.

[0043] [Figure 1] FIG. 2 is a functional block diagram illustrating an example of a substrate processing system incorporating an ESC with electrodes and a tuning circuit corresponding to the electrodes, in accordance with an embodiment of the present disclosure.

[0044] [Figure 2] FIG. 2 is a functional block diagram illustrating an example of a capacitive coupling circuit with tuning circuitry for clamping and biasing electrodes in accordance with one embodiment of the present disclosure.

[0045] [Figure 3] FIG. 2 is a functional block diagram illustrating an example of a capacitive coupling circuit with tuning circuitry for two clamp electrodes and a bias electrode, in accordance with one embodiment of the present disclosure.

[0046] [Figure 4] FIG. 2 is a functional block diagram illustrating an example of a capacitive coupling circuit with tuning circuits for a clamp electrode and two bias electrodes, in accordance with one embodiment of the present disclosure.

[0047] [Figure 5]FIG. 2 is a functional block diagram illustrating an example of a capacitive coupling circuit with tuning circuits for a clamp electrode and three bias electrodes, in accordance with one embodiment of the present disclosure.

[0048] [Figure 6] FIG. 2 is a functional block diagram illustrating an example of tuning circuitry for clamping and biasing electrodes in accordance with one embodiment of the present disclosure.

[0049] [Figure 7] FIG. 1 is a functional block schematic diagram illustrating an example of a tuning circuit connected to a single RF power supply and with series-connected inductors and capacitors for two clamping electrodes and a bias electrode ring, in accordance with one embodiment of the present disclosure.

[0050] [Figure 8] FIG. 1 is a functional block schematic diagram illustrating an example of a tuning circuit connected to a single RF power supply and with shunt-connected inductors and capacitors for two clamping electrodes and a bias electrode ring, in accordance with one embodiment of the present disclosure.

[0051] [Figure 9] FIG. 1 is a functional block schematic diagram illustrating an example of a tuning circuit connected to a dual RF power supply and with series-connected inductors and capacitors and shunt-connected inductors and capacitors for the two clamping and bias electrode rings, in accordance with one embodiment of the present disclosure.

[0052] [Figure 10] FIG. 1 is a functional block schematic diagram illustrating an example of two tuning circuits with series-connected inductors and capacitors or shunt-connected inductors and capacitors for two clamping and bias electrode rings connected to respective RF power supplies in accordance with one embodiment of the present disclosure.

[0053] [Figure 11]FIG. 1 is a functional block schematic diagram illustrating an example of a tuning circuit with parallel-connected capacitors and inductors for two clamping electrodes and a bias electrode ring, in accordance with one embodiment of the present disclosure.

[0054] [Figure 12] FIG. 1 illustrates a method of operating a substrate processing system including setting and adjusting impedance values ​​for tuning circuits of electrodes of an electrostatic chuck according to one embodiment of the present disclosure.

[0055] [Figure 13] FIG. 1 illustrates an example of a substrate support with an outer ring electrode and two inner electrodes, according to one embodiment of the present disclosure.

[0056] In the drawings, the same numbers may be used to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE INVENTION

[0057] In a capacitively coupled plasma (CCP) system, an RF voltage signal may be supplied to a showerhead and / or a substrate support (e.g., an electrostatic chuck or pedestal) in a processing chamber to generate and maintain a plasma supplied for substrate processing (e.g., a plasma supplied during an etching or deposition process). As an example, the substrate support may include multiple electrodes for receiving the RF voltage. The electrodes have respective geometries and, therefore, may have different sizes and shapes and be positioned at different locations within the substrate support.

[0058] Examples described herein include a tuning circuit for controlling RF voltages supplied to electrodes of a substrate support. The tuning circuit has variable and / or fixed impedances that can be adjusted for the substrate process being performed. The RF voltages and corresponding currents supplied to the electrodes can be controlled to vary aspects of the generated plasma. During processing, a substrate is placed on the substrate support, and one or more layers (e.g., film layers) of the substrate can be etched or deposited, for example. By adjusting the RF voltages supplied to different electrodes, parameters of one or more layers can be spatially varied and / or tuned across the wafer according to the location of the electrodes. By way of example, the parameters of one or more layers can include uniformity values, stress values, refractive indexes, etch rates, deposition rates, thickness values, and / or other characteristic property values ​​that are measurands.

[0059] RF power is disclosed as being supplied from one or more RF power sources. In one embodiment, RF power is supplied by feeding a common node RF power from a single RF power source. RF power is then supplied from the common node to different electrodes of the substrate support via respective paths. The paths include tuning circuits and / or impedances that vary the corresponding RF voltage, current level, phase, and / or frequency content. The impedances may include series-connected or shunt-connected impedances. Other embodiments with multiple power sources, multiple nodes, and various paths are disclosed herein.

[0060] The RF voltage and current levels supplied to the electrodes in the substrate support may be varied by adjusting the size, shape, and pattern of the electrodes. For example, the amount of RF voltage and current supplied to the plasma from annular and / or circular electrodes, the substrate processing performed using annular and / or circular electrodes, and / or the resulting substrate properties may be changed and / or adjusted by varying the radius of the electrodes.

[0061] A substrate processing system may have multiple features, characteristics, and / or parameters that can be set and / or adjusted to provide flexibility and control the resulting aspects of a layer on a substrate during substrate processing. For example, RF power levels, chamber geometry, focus ring utilization, showerhead hole pattern, showerhead geometry, electrode pattern, gas pressure, gas composition, etc. may be set and / or controlled to provide a resulting substrate with a targeted layer composition and profile.

[0062] The disclosed examples provide another degree of freedom for adjusting the profile of one or more layers of a substrate by setting and / or adjusting the impedance of the tuning circuit (e.g., selecting, changing, and / or controlling capacitance, inductance, reactance, resistance, layout, etc.), where profile refers to the above-mentioned parameters of one or more layers.

[0063] The radial profile of the substrate may be altered, for example, by modifying a metal or dielectric annular element near the periphery of the substrate. This may include adjusting parameters such as gas pressure, gas flow rate, gas composition, RF discharge power, frequency of the RF signal supplied to the electrode of the substrate support, and / or other parameters. Altering these parameters at a particular location to provide a desired layer characteristic (e.g., a particular layer thickness or shape at the periphery) may alter other parameters and / or affect other characteristics at the same and / or other locations. Thus, these parameters do not independently adjust a particular characteristic. In another example, the periphery of the substrate may be altered by using a focus ring positioned outside the periphery of the substrate. However, the use of a focus ring may affect the gas flow rate at the center of the substrate, thereby affecting the process and therefore the results at the center of the substrate. Examples of other layer characteristics include a particular trench depth or width, the distance between trenches, the distance between conductive elements, the layer composition, etc.

[0064] The more parameters and degrees of freedom available in setting and controlling the adjustment of the profile of one or more layers of a substrate, the greater the likelihood that a particular feature can be provided without adversely affecting other features. Also, a greater number of parameters and degrees of freedom increases the number, composition, and layout (or pattern) of features that can be formed. The examples disclosed herein increase the flexibility and location-specific design options in substrate layer design, enabling a substrate processing system to provide a wide variety of features.

[0065] FIG. 1 illustrates a substrate processing system 100 incorporating an ESC 101. The ESC 101 may be configured the same as or similar to any of the ESCs disclosed herein. While FIG. 1 illustrates a capacitively coupled plasma (CCP) system, embodiments disclosed herein are applicable to transformer coupled plasma (TCP) systems with a substrate support, electron cyclotron resonance (ECR) plasma systems, inductively coupled plasma (ICP) systems, and / or other systems and plasma sources. Embodiments are applicable to PVD processes, PECVD processes, chemically enhanced plasma vapor deposition (CEPVD) processes, ion implantation processes, plasma etch processes, and / or other etching, deposition, and cleaning processes.

[0066] ESC 101 may include a top plate 102 and a base plate 103. While ESC 101 is illustrated as having two plates, the ESC may include a single plate. Plates 102, 103 may be formed of ceramic and / or other materials. Although each of the ESCs in FIGS. 1-5 and 7-11 is illustrated as having certain features and not others, each of the ESCs may be modified to include any of the features disclosed herein and in FIGS. 1-5 and 7-11.

[0067] Although ESC 101 is shown mounted to the bottom of a processing chamber and not configured to be rotated, ESC 101 and other ESCs disclosed herein may be mounted to the bottom or top of a processing chamber and configured as a spin chuck that is rotated during substrate processing. If mounted to the top of a processing chamber, the ESC may have a configuration similar to that disclosed herein but may be inverted and include peripheral substrate holding, clamping, and / or gripping hardware.

[0068] The substrate processing system 100 includes a process chamber 104. The ESC 101 is housed within the process chamber 104. The process chamber 104 also houses other components, such as an upper electrode 105, to confine the RF plasma. During operation, a substrate 107 is placed on and electrostatically clamped to the top plate 102 of the ESC 101.

[0069] By way of example only, the upper electrode 105 may comprise a showerhead 109 for introducing and dispersing gases. The showerhead 109 may comprise a stem portion 111 with one end connected to the top surface of the processing chamber 104. The showerhead 109 is generally cylindrical and flares radially outward from the opposite end of the stem portion 111 away from the top surface of the processing chamber 104. The substrate-facing surface or showerhead 109 comprises holes through which process or purge gases flow. Alternatively, the upper electrode 105 may comprise a conductive plate, and gases may be introduced in another manner. One or both of the plates 102, 103 may function as the lower electrode.

[0070] One or both of the plates 102, 103 may include a temperature control element (TCE). As an example, FIG. 1 shows the top plate 102 including a TCE 110 and used as a heating plate. An intermediate layer 114 is disposed between the plates 102, 103. The intermediate layer 114 may bond the top plate 102 to the base plate 103. As an example, the intermediate layer may be formed of an adhesive suitable for bonding the top plate 102 to the base plate 103. The base plate 103 may include one or more gas channels 115 and / or one or more coolant channels 116 for flowing backside gas to the backside of the substrate 107 and for flowing coolant through the base plate 103.

[0071] An RF generation system 120 generates and outputs RF voltages to the upper electrode 105 and the lower electrode (e.g., to one or both of plates 102, 103). One of the upper electrode 105 and the ESC 101 may be DC grounded, AC grounded, or at a floating potential. By way of example only, the RF generation system 120 may include one or more RF generators 122 (e.g., capacitively coupled plasma RF power generators, bias power generators, and / or other RF power generators) controlled by a system controller 121 that generate RF voltages, which are supplied to the upper electrode 105 and / or the ESC 101 by one or more matching / distribution networks 124. By way of example, a first RF generator 123, a second RF generator 125, a first RF matching network 127, and a second RF matching network 129 are shown. The first RF generator 123 and the first RF matching network 127 may supply an RF voltage or may simply connect the showerhead 109 to a ground reference. The second RF generator 125 and the second RF matching network, each or collectively referred to as a power source, may supply an RF / bias voltage to the ESC 101. In one embodiment, the first RF generator 123 and the first RF matching network 127 provide power to ionize the gas and drive the plasma. In another embodiment, the second RF generator 125 and the second RF matching network 129 provide power to ionize the gas and drive the plasma. One of the RF generators 123, 125 may be a high-power RF generator producing, for example, 6-10 kilowatts (kW) or more of power.

[0072] The second RF matching network 129 includes an impedance 128 and supplies power to RF electrodes (such as RF electrodes 131 and 133) in the plates 102 and 103. The RF electrodes may be located in one or both of the plates 102 and 103. For example, the RF electrodes may be located near the top surface of the ESC 101 when used as clamping electrodes and / or may be located at other locations within the ESC 101 when used for biasing. The RF electrodes may alternatively or additionally receive power from other power sources. As an example, some of the RF electrodes may receive power from the power source 135 instead of or in addition to receiving power from the second RF matching network 129. In one embodiment, the power source 135 does not include a matching network and / or a matching network is not located between the power source 135 and the RF electrodes. Some of the RF electrodes may receive power from the second RF matching network 129 and / or the power source 135 to electrostatically clamp the substrate to the top plate 102. The power supply 135 may be controlled by the system controller 121. A tuning circuit 139 may be connected (i) between the second RF matching network 129 and a corresponding one of the electrodes 131, 133, 137, and (ii) between the power supply 135 and a corresponding one of the electrodes 131, 133, 137. In one embodiment, the tuning circuit 139 is located downstream from the second RF matching network 129 and outside the process chamber 104. Examples of the tuning circuit 139 are shown in FIGS. 2-11.

[0073] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively, gas sources 132), where N is an integer greater than zero. The gas sources 132 provide one or more precursors and their gas mixtures. The gas sources 132 may provide an etching gas, a carrier gas, and / or a purge gas. Vaporized precursors may also be used. The gas sources 132 are connected to a manifold 140 by valves 134-1, 134-2, ..., and 134-N (collectively, valves 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively, mass flow controllers 136). The output of the manifold 140 is provided to the process chamber 104. By way of example only, the output of the manifold 140 is provided to a showerhead 109.

[0074] The substrate processing system 100 further includes a cooling system 141 including a temperature controller 142, which may be connected to the TCE 110. In one embodiment, the TCE 110 is not included. Although shown separate from the system controller 121, the temperature controller 142 may be implemented as part of the system controller 121. One or both of the plates 102, 103 may include multiple temperature-controlled compartments (e.g., four compartments, where each compartment includes four temperature sensors).

[0075] The temperature controller 142 may control the operation and thus the temperature of the TCE 110 to control the temperatures of the plates 102, 103 and the substrate (e.g., substrate 107). The temperature controller 142 and / or the system controller 121 may control the flow rate of a backside gas (e.g., helium) delivered to the gas passage 115 to cool the substrate by controlling the flow from one or more gas sources 132 to the gas passage 115. The temperature controller 142 may also communicate with a coolant assembly 146 to control the flow of a first coolant (cooling fluid pressure and flow rate) through the passage 116. The first coolant assembly 146 may receive the cooling fluid from a reservoir (not shown). For example, the coolant assembly 146 may include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to flow a coolant through the passage 116 to cool the base plate 103. The temperature controller 142 may control the rate at which the coolant flows and the temperature of the coolant. The temperature controller 142 controls the current supplied to the TCE 110 and the pressure and flow rate of the gas and / or coolant supplied to the flow paths 115, 116 based on parameters detected by sensors 143, 144 in the process chamber 104. The sensors 143, 144 may include resistance temperature devices, thermocouples, digital temperature sensors, temperature probes, and / or other suitable temperature sensors. The sensors 143, 144 and / or other sensors included in the substrate processing system 100 may be used to detect parameters such as temperature, gas pressure, voltage, and current levels. During the etching process, the substrate 107 may be heated to a predetermined temperature (e.g., 120 degrees Celsius (120° C.)) in the presence of a high-power plasma. The flow of gas and / or coolant through the channels 115, 116 reduces the temperature of the base plate 103, which in turn reduces the temperature of the substrate 107 (eg, from 120° C. to 80° C.).

[0076] Valves 156 and pumps 158 may be used to evacuate reactants from the processing chamber 104. A system controller 121 may control the components of the substrate processing system 100, including controlling the supplied RF power levels, the pressure and flow rates of supplied gases, RF matching, etc. The system controller 121 controls the states of the valves 156 and pumps 158. A robot 170 may be used to deliver substrates onto and remove substrates from the ESC 101. For example, the robot 170 may transfer substrates between the ESC 101 and a load lock 172. The robot 170 may be controlled by the system controller 121. The system controller 121 may control the operation of the load lock 172.

[0077] Valves, gas and / or coolant pumps, power supplies, RF generators, etc. may be referred to as actuators. TCEs, gas flow paths, coolant flow paths, etc. may be referred to as temperature adjustment elements.

[0078] The system controller 121 may control the impedance state of the tuning circuit 139. Examples of impedances are shown in FIGS. 7-11. The impedance of the tuning circuit 139 may be adjusted based on feedback signals received from sensors 143, 144, 145 and / or other sensors in the substrate support 101, the process chamber 104, the second RF matching network 129, and / or one or both of the power sources 125, 135. The sensor 145 may detect the voltage, current level, or power level in the second RF matching network 129. While the sensors are shown in the base plate 103, one or more of the sensors may be located in the top plate 102. The sensor 104 may be located anywhere in the substrate support 101. The sensor 143 may be located anywhere in the process chamber 104.

[0079] The system controller 121 may further control the state of the impedance 128. The state of the impedance 128 may be set so that one or more impedances at one or more outputs of the second RF matching network 129 match the impedance seen at the input of the tuning circuit 139. The impedance seen at the input of the tuning circuit 139 is based on the impedance of the substrate support 101 and the tuning circuit 139. In adjusting the impedance of the tuning circuit 139, the system controller 121 may also adjust the impedance of the second RF matching network 129 accordingly.

[0080] 2-11, described below, illustrate a particular number of tuning circuits, impedances, clamping electrodes, RF electrodes, and / or other elements, but any number of each element may be provided. Also, while the tuning circuits, impedances, clamping electrodes, and RF electrodes are illustrated as having particular sizes, shapes, and patterns in particular arrangements, the elements may have different sizes, shapes, and patterns in different arrangements.

[0081] 2 shows a capacitive coupling circuit 200 including a clamp tuning circuit 202, an RF tuning circuit 204, a clamp electrode 206, and an RF electrode 208. A cross-sectional view of a showerhead (i.e., upper electrode) 210 and an ESC 212 is shown. The showerhead 210 may be connected to a reference potential or ground 214. In one embodiment, the showerhead 210 is RF powered by the first RF matching network 127 of FIG. 1. A plasma 216 is provided between the showerhead 210 and the ESC 212. A substrate 218 is disposed on the ESC 212.

[0082] Clamp tuning circuit 202 may be used to control the clamp voltage, current level, phase, power level, and / or frequency provided to clamp electrode 206. RF tuning circuit 204 may be used to control the bias voltage, current level, power level, and / or frequency provided to RF electrode 208. Tuning circuits 202, 204 may be used to, for example, tune power P from second RF matching network 129 (or first power source) and / or power source 135 (or second power source) of FIG. inner , P outer The tuning circuits 202, 204 may receive signals and be used to adjust the voltage drop across the plasma. This may include adjusting the voltage difference at each pair of points above and along the surface of the substrate support 101 in FIG. 1. Examples of tuning circuits 202, 204 are shown in FIG. 6. The tuning circuits 202, 204 may include one or more impedances, as shown in FIG. 6. The tuning circuits 202, 204 may not include parallel impedance paths, or may include transmission lines instead of series impedance paths. Examples of parallel and series impedance paths are shown in FIG. 6. Examples of impedances that may be included in the tuning circuits 202, 204 are shown in FIGS. 7-11. The impedances may be connected in series or parallel, may be shunt impedances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short or open circuits, filtering elements (or filters), and / or other impedances. As an example, the clamping electrode 206 may be circular, and the RF electrode 208 may be annular.

[0083] 3 shows a capacitive coupling circuit 300 including a first clamp tuning circuit 302, a second clamp tuning circuit 303, an outer RF tuning circuit 304, a first clamp electrode 306, a second clamp electrode 307, and an RF electrode 308. A cross-sectional view of a showerhead (i.e., upper electrode) 310 and an ESC 312 is shown. The showerhead 310 may be connected to a reference potential or ground 314. In one embodiment, the showerhead 310 is RF powered by the first RF matching network 127 of FIG. 1. A plasma 316 is provided between the showerhead 310 and the ESC 312. A substrate 318 is disposed on the ESC 312.

[0084] Clamp tuning circuits 302, 303 may be used to control the clamp voltage, current level, power level, and / or frequency provided to clamp electrodes 306, 307. RF tuning circuit 304 may be used to control the bias voltage, current level, power level, and / or frequency provided to RF electrode 308. Tuning circuits 302, 303, and 304 receive power P from, for example, second RF matching network 129 (or first power source) of FIG. 1, power source 135 (or second power source) of FIG. 1, and / or from one or more other power sources. clamp1 , P clamp2 , and ,P outer The tuning circuits 302, 303, 304 may be used to adjust the voltage drop across the plasma. clamp1 is P clamp2An example of tuning circuits 302, 303, and 304 is shown in FIG. 6. Tuning circuits 302, 303, and 304 may include one or more impedances as shown in FIG. 6. Tuning circuits 302, 303, and 304 may not include parallel impedance paths, or may include transmission lines instead of series impedance paths. Examples of impedances that may be included in tuning circuits 302, 303, and 304 are shown in FIGS. 7-11. The impedances may be connected in series or parallel, may be shunt impedances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short or open circuits, filtering elements, and / or other impedances. As an example, clamping electrodes 306 and 307 may be circular, and RF electrode 308 may be annular.

[0085] 4 shows a capacitive coupling circuit 400 including a clamp tuning circuit 402, an inner RF tuning circuit 404, an outer RF tuning circuit 405, a clamp electrode 406, an inner bias electrode 408, and an outer bias electrode 409. A cross-sectional view of a showerhead (i.e., upper electrode) 410 and an ESC 412 is shown. The showerhead 410 may be connected to a reference potential or ground 414. In one embodiment, the showerhead 410 is RF powered by the first RF matching network 127 of FIG. 1. A plasma 416 is provided between the showerhead 410 and the ESC 412. A substrate 418 is disposed on the ESC 412.

[0086] Clamp tuning circuit 402 may be used to control the clamp voltage, current level, phase, power level, and / or frequency provided to clamp electrode 406. RF tuning circuits 404, 405 may be used to control the bias voltage, current level, power level, and / or frequency provided to bias electrodes 408, 409. Tuning circuits 402, 404, 405 receive power P from, for example, second RF matching network 129 (or first power source) of FIG. 1, power source 135 (or second power source) of FIG. 1, and / or from one or more other power sources. clamp , P inner , P outer The tuning circuits 402, 404, and 405 may receive a signal. The tuning circuits 402, 404, and 405 may be used to adjust the voltage drop across the plasma. Examples of the tuning circuits 402, 404, and 405 are shown in FIG. 6. The tuning circuits 402, 404, and 405 may include one or more impedances, as shown in FIG. 6. The tuning circuits 402, 404, and 405 may not include a parallel impedance path, or may include a transmission line instead of a series impedance path. Examples of impedances that may be included in the tuning circuits 402, 404, and 405 are shown in FIGS. 7-11. The impedances may be connected in series or parallel, may be shunt impedances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short or open circuits, filtering elements, and / or other impedances. As an example, the clamping electrode 406 and the inner bias electrode 408 may be circular, and the outer bias electrode 409 may be annular.

[0087] 5 shows a capacitively coupled circuit 500 including a clamp tuning circuit 502, a first inner RF tuning circuit 504, a second inner tuning circuit 505, an outer RF tuning circuit 506, a clamp electrode 507, a first inner bias electrode 508, a second inner bias electrode 509, and an outer bias electrode 510. A cross-sectional view of a showerhead (i.e., upper electrode) 511 and an ESC 512 is shown. The showerhead 511 may be connected to a reference potential or ground 514. In one embodiment, the showerhead 511 is RF powered by the first RF matching network 127 of FIG. 1. A plasma 516 is provided between the showerhead 511 and the ESC 512. A substrate 518 is disposed on the ESC 512.

[0088] Clamp tuning circuit 502 may be used to control the clamp voltage, current level, power level, and / or frequency provided to clamp electrode 507. RF tuning circuits 504, 505, 506 may be used to control the bias voltage, current level, phase, power level, and / or frequency provided to bias electrodes 508, 509, 510. Tuning circuits 502, 504, 505, 506 receive power P from, for example, second RF matching network 129 of FIG. 1 (or first power source), power source 135 of FIG. 1 (or second power source), and / or from one or more other power sources. clamp , P inner1 , P inner2 , P outerThe tuning circuits 502, 504, 505, and 506 may receive a signal from the tuning circuits 502, 504, 505, and 506. The tuning circuits 502, 504, 505, and 506 may be used to adjust the voltage drop across the plasma. Examples of the tuning circuits 502, 504, 505, and 506 are shown in FIG. 6. The tuning circuits 502, 504, 505, and 506 may include one or more impedances as shown in FIG. 6. The tuning circuits 502, 504, 505, and 506 may not include a parallel impedance path, or may include a transmission line instead of a series impedance path. Examples of impedances that may be included in the tuning circuits 502, 504, 505, and 506 are shown in FIGS. 7-11. The impedances may be connected in series or parallel, may be shunt reactances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short or open circuits, filtering elements, and / or other impedances. As an example, the clamp electrode 507 and bias electrodes 508, 509 may be circular, and the outer bias electrode 510 may be annular.

[0089] FIG. 6 shows a tuning circuit 600 for an electrode (or load) 602, such as a clamp electrode or a bias electrode. The tuning circuit 600 may replace any of the tuning circuits 202, 204, 302, 304, 305, 402, 404, 405, 502, 504, 505, and 506 of FIGS. 2-5. An example of the tuning circuit 600 is shown in FIGS. 9-10. The tuning circuit 600 may receive RF power from an RF power source 604 (such as one of the power sources 129, 135 of FIG. 1). The tuning circuit 600 may include a series impedance path 605 with a series impedance set 606 and a parallel impedance path 607 with a parallel impedance set 608. The series impedance set 606 includes one or more impedances 609 connected in series between the RF power source 604 and the load 602. The series impedance set 606 and one or more impedances 609 are connected between the load 602 and a power supply terminal 610. The power supply terminal 610 is connected to the RF power supply 604. The parallel impedance set 608 is connected between (i) the power supply terminal 610, which is connected between the RF power supply 604 and the series impedance set 606, and (ii) a reference terminal or ground 612. The parallel impedance set 608 may include one or more impedances 613 connected in parallel between the power supply terminal 610 and the reference terminal 612.

[0090] One or both of the impedances 609, 613 may be fixed impedances. Additionally or alternatively, one or both of the impedances 609, 613 may be variable impedances that may be adjusted by the system controller 121 of Figure 1 based on, for example: the current process recipe; current operating parameters; parameters measured and / or determined based on the output of one or more sensors (e.g., sensor 143 of Figure 1); and / or characteristics and / or properties of the processing system, the ESC, and the substrate.

[0091] 7-11 below, certain impedances are illustrated, but other impedances may be provided. Impedances may include "stray" inductance from electrical wires and / or other conductive circuit elements.

[0092] 7 shows a tuning circuit 700 that may be connected to a single RF power supply 702. The tuning circuit 700 includes series-connected inductors L1-L3 and capacitors C1-C3 for two clamping electrodes 706, 708 and a bias electrode ring 710. The RF power supply 702 may operate similarly to the power supplies 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 711. In one embodiment (also referred to as a grounded pedestal configuration), the RF power supply 702 is not included and the capacitors C1-C3 are connected to ground 711.

[0093] 7, a cross-sectional view of electrodes 706, 708, and 710 is shown. Electrodes 706, 708, and 710 may be concentrically arranged. L1 and C1 are connected in series between (i) the RF power supply 702 and common terminal 712 and (ii) the first inner clamping electrode 706. L2 and C2 are connected in series between (i) the RF power supply 702 and common (or power supply) terminal 712 and (ii) the center terminal 714, which is connected to two points on the bias electrode ring 710. L3 and C3 are connected in series between (i) the RF power supply 702 and common terminal 712 and (ii) the second inner clamping electrode 708.

[0094] Inductors L1-L3 and capacitors C1-C3 may have fixed values, as described above, or may be variable devices controlled by system controller 121 of Figure 1. Although inductors L1-L3 and capacitors C1-C3 are shown, other impedances may be incorporated into tuning circuit 700.

[0095] 7 provides an example where power is supplied to a common node (or terminal) and split to supply power to multiple electrodes. The impedance of each path to each electrode may be modified by the impedance (or series-connected inductance and capacitance) in the corresponding path.

[0096] 8 shows a tuning circuit 800 that may be connected to a single RF power supply 802. The tuning circuit 800 includes shunt inductors L1-L3 and shunt capacitors C1-C3 for two clamping electrodes 804, 806 and a bias electrode ring 808. The RF power supply 802 may operate similarly to the power supplies 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 811. The RF power supply 802 is connected to a common (or power supply) terminal 812, which is connected to the clamping electrodes 802, 806 and a center terminal 814.

[0097] In one embodiment (also referred to as a grounded pedestal configuration), RF power supply 802 is not provided, and terminal 812 is connected to ground 811. When terminal 812 is connected to ground 811, one or more series-connected impedances may be connected (i) between node 820 and ground 811, (ii) between node 822 and ground 811, and / or between node 824 and ground 811. The one or more series-connected impedances may be similar to impedances L1-L3 and C1-C3, or may include other impedances. This may be done, for example, when the corresponding showerhead is supplied with RF power.

[0098] Cross-sectional views of electrodes 802, 806, and 808 are shown. Electrodes 802, 806, and 808 may be concentrically arranged. L1 and C1 are connected in parallel between a first terminal 820 and ground 811. The first terminal 820 is connected between a common terminal 812 and the first clamping electrode 802. L2 and C2 are connected in parallel between a second terminal 822 and ground 811. The second terminal 822 is connected between the common terminal 812 and the first clamping electrode 802. L3 and C3 are connected in parallel between a third terminal 824 and ground 811. The third terminal 824 is connected between the common terminal 812 and the second clamping electrode 806.

[0099] Inductors L1-L3 and capacitors C1-C3 may have arbitrary and / or predetermined fixed values, as described above, or may be variable devices controlled by system controller 121 of Figure 1. Although inductors L1-L3 and capacitors C1-C3 are shown, other impedances may be incorporated into tuning circuit 800.

[0100] 8 provides another example where power is supplied to a common node and split to power multiple electrodes, where the impedance of each path to each electrode may be modified by a shunt impedance (or shunt inductance and capacitance) connected to the corresponding path.

[0101] 9 shows a tuning circuit 900 connected to dual RF power supplies 902, 904. The tuning circuit 900 includes series-connected inductors L1-L3 and capacitors C1-C3 and shunt-connected inductors L4-L6 and capacitors C4-C6 for two clamping electrodes 906, 908 and a bias electrode ring 910. The RF power supplies 902, 904 may operate similarly to the power supplies 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 911. The RF power supplies 902, 904 are connected to a common (or power) terminal 912 and may supply power at the same or different frequencies.

[0102] In one embodiment (also referred to as a grounded pedestal configuration), RF power sources 902, 904 are not provided, and terminal 912 is connected to ground 911. When terminal 912 is connected to ground 911, one or more series-connected impedances may be connected (i) between node 920 and ground 911, (ii) between node 922 and ground 911, and / or between node 924 and ground 911. The one or more series-connected impedances may be similar to impedances L1-L3 and C1-C3, or may include other impedances. This may be done, for example, when the corresponding showerhead is supplied with RF power.

[0103] Inductor L1 and capacitor C1 are connected in series between common terminal 912 and first clamping electrode 906. Inductor L2 and capacitor C2 are connected in series between center terminal 914 and common terminal 912. The center terminal is connected to two points on bias electrode ring 910.

[0104] Cross-sectional views of electrodes 906, 908, and 910 are shown. Electrodes 906, 908, and 910 may be concentrically arranged. L4 and C4 are connected in parallel between a first terminal 920 and ground 911. The first terminal 920 is connected between capacitor C1 and common terminal 912. L5 and C5 are connected in parallel between a second terminal 922 and ground 911. The second terminal 922 is connected between capacitor C2 and common terminal 912. L6 and C6 are connected in parallel between a third terminal 924 and ground 911. The third terminal 924 is connected between capacitor C3 and common terminal 912.

[0105] Inductors L1-L6 and capacitors C1-C6 may have arbitrary and / or predetermined fixed values, as described above, or may be variable devices controlled by system controller 121 of Figure 1. Although inductors L1-L6 and capacitors C1-C6 are shown, other impedances may be incorporated into tuning circuit 900. L4-L6 and C4-C6 may be any circuit network, and the network may not include inductors and / or capacitors.

[0106] 10 shows that two tuning circuits 1000, 1002 may be connected to respective RF power supplies 1004, 1006. The first tuning circuit 1000 includes series-connected inductors L1, L3 and capacitors C1, C3 and shunt-connected inductors L4, L6 and capacitors C4, C6 for the two clamping electrodes 1010, 1012. The second tuning circuit 1002 includes series-connected inductor L2 and capacitor C2 and shunt-connected inductor L5 and capacitor C5 for the bias electrode ring 1014. The RF power supplies 1004, 1006 may operate similarly to the power supplies 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 1016. The RF power supply 1004 is connected to a common (or power supply) terminal 1018, which is connected to C1, C3, C4, C6, L4, and L6. The RF power supply 1006 is connected via C2 and L2 to the center terminal 1020. The RF power supplies 1004, 1006 may provide power at the same frequency or at different frequencies.

[0107] Inductor L1 and capacitor C1 are connected in series between common terminal 1018 and first clamping electrode 1010. Inductor L2 and capacitor C2 are connected in series between center terminal 1020 and RF power supply 1006. Center terminal 1020 is connected to two points on bias electrode ring 1014.

[0108] Cross-sectional views of electrodes 1010, 1012, and 1014 are shown. Electrodes 1010, 1012, and 1014 may be concentrically arranged. L4 and C4 are connected in parallel between a first terminal 1030 and ground 1016. The first terminal 1030 is connected between capacitor C1 and a common terminal 1018. L5 and C5 are connected in parallel between a second terminal 1032 and ground 1016. The second terminal 1032 is connected between capacitor C2 and the common terminal 1018. L6 and C6 are connected in parallel between a third terminal 1034 and ground 1016. The third terminal 1034 is connected between capacitor C3 and the common terminal 1018.

[0109] Inductors L1-L6 and capacitors C1-C6 may have arbitrary and / or predetermined fixed values, as described above, or may be variable devices controlled by system controller 121 of Figure 1. Although inductors L1-L6 and capacitors C1-C6 are shown, other impedances may be incorporated into tuning circuit 1000. L4-L6 and C4-C6 may be any circuit network, and the network may not include inductors and / or capacitors.

[0110] In one embodiment, RF power source 1004 is not provided, and terminal 1018 is connected to ground 1016. In another embodiment, RF power source 1006 is not provided, and terminal 1032 is connected to ground 1016. In yet another embodiment, neither RF power source 1004 nor 1006 is provided, and terminals 1018 and 1032 are connected to ground 1016. When terminal 1018 and / or terminal 1032 are connected to ground 1016, one or more series-connected impedances may be connected (i) between node 1030 and ground 1016, (ii) between node 1034 and ground 1016, and / or between node 1032 and ground 1016. The one or more series-connected impedances may be similar to impedances L1-L3 and C1-C3 or may include other impedances. This may be done, for example, when the corresponding showerhead is supplied with RF power.

[0111] 11 shows a tuning circuit 1100 with parallel-connected capacitors C1, C2 and inductors L1, L2 for two clamping electrodes 1102, 1104 and a bias electrode ring 1106. The electrodes 1102, 1104, 1106 may be concentrically arranged. Capacitors C1 and C2 are connected in series (i) between the clamping electrodes 1102, 1104 and (ii) between the power supply terminals 1110, 1112. Inductors L1, L2 are connected in parallel with capacitors C1, C2, respectively, and are connected in series (i) between the clamping electrodes 1102, 1104 and (ii) between the power supply terminals 1110, 1112. Center terminals 1114, 1116 are connected between the capacitors C1, C2 and inductors L1, L2, respectively. The central terminals 1114, 1116 are connected to both (i) two points on the bias electrode ring 1106 and (ii) a third (or central) power supply terminal 1118. The power supply terminals 1110, 1112 are connected to the clamping electrodes 1102, 1104, respectively. The power supply terminals 1110, 1112, 1118 may be connected to respective power supplies. In one embodiment, one or more of the power supply terminals 1110, 1112, 1118 are not connected to an RF power supply but are connected to a reference terminal or ground.

[0112] Inductors L1-L2 and capacitors C1-C2 may have arbitrary and / or predetermined fixed values, as described above, or may be variable devices controlled by system controller 121 of Figure 1. Although inductors L1-L2 and capacitors C1-C2 are shown, other impedances may be incorporated into tuning circuit 1100. Inductors L1-L2 and capacitors C1-C2 are coupling elements connected between the electrodes to supply power at multiple frequencies to each electrode.

[0113] Tuning circuit 1100 may be used in combination with any of the circuits shown in Figures 3, 5, and 7-10. For example, capacitors C1, C2 and inductors L1, L2 may be similarly connected to electrodes 306, 307 and electrode ring 308 of Figure 3; electrodes 508, 509 and electrode ring 510 of Figure 5; electrodes 706, 708 and electrode ring 710 of Figure 7; electrodes 802, 806 and electrode ring 808 of Figure 8; electrodes 906, 908 and electrode ring 910 of Figure 9; and electrodes 1010, 1012 and electrode ring 1014 of Figure 10.

[0114] In the above examples of Figures 2-11, when power is supplied at multiple frequencies, the path to a given electrode may include a frequency-dependent filtering element to supply power at a specific frequency to that electrode. The impedances described above may include a frequency-dependent filtering element. Furthermore, power supplied to different electrodes may be supplied by separate (or different) power supplies operating at the same or different frequencies such that the power supplied by the power supplies is the same or different frequencies. Figures 9-10 show an example with multiple power supplies. As an alternative, one or more of the power supplies may not be provided, and the corresponding terminal (e.g., terminals 912, 1018, 1032) may be connected to a reference terminal or ground.

[0115] 12 illustrates an example method of operating a substrate processing system, including setting and adjusting impedance values ​​for tuning circuits of an electrode of an electrostatic chuck. The following steps are described primarily with respect to the embodiment of FIGS. 1-11, but can be easily modified to apply to other embodiments of the present disclosure. The steps may be performed iteratively. The steps may be performed, for example, by the system controller 121 of FIG. 1.

[0116] The method may begin at step 1200. In step 1202, a process to be performed is selected. Examples of processes include cleaning processes, etching processes, deposition processes, annealing processes, etc. In step 1204, a recipe including system operating parameters is determined for performing the selected process. Examples of system operating parameters include: gas pressures and flow rates; temperatures of the process chamber, ESC, and substrate; RF bias voltages; clamp voltages; electrode voltages, current levels, power levels, and / or frequencies, etc.

[0117] In step 1206, characteristics and / or properties of the process chamber, the ESC, and the substrate are determined. Examples of characteristics and properties include process chamber geometry, ESC composition, ESC heating and cooling characteristics (e.g., heating and cooling rates), ESC size, substrate composition, ESC and / or substrate material, etc.

[0118] In step 1208, system operating parameters may be set by the system controller 121. This may include controlling the operation of the actuators described above. In step 1210, an impedance value of the tuning circuit is set based on the selected process, recipe, and system operating parameters. The impedance value may additionally or alternatively be set based on characteristics and / or properties of the process chamber, the ESC, and / or the substrate. By way of example, a look-up table relating impedance values ​​to other parameters, features, and / or properties described herein may be stored in memory of and / or accessed by the system controller 121. The system controller 121 may set the impedance 128 of the second RF matching network 129 as described above.

[0119] In step 1212, the substrate may be placed on the ESC, which may include applying a clamping voltage to clamp the substrate to the ESC. In step 1214, a processing operation is performed. Examples of processing operations include cleaning operations, gas flow operations, plasma flow and ignition operations, etching operations, deposition operations, annealing operations, post-annealing operations, and purging of the processing chamber.

[0120] Steps 1216, 1218, 1220, and 1222 may be performed during step 1212. In step 1216, sensor output signals including sensor output data for the substrate processing system are monitored. This may include receiving signals from sensors 143, 144, and 145 of Figure 1. In step 1218, parameters may be determined based on the sensor output signals, data, and / or corresponding measurements (such as temperature, gas pressure, voltage, current level, power level, etc.) from sensors 143, 144, 145, and / or other sensors.

[0121] In step 1220, the system controller 121 may determine whether to adjust the impedance value of the tuning circuit based on the measured and / or determined parameters. This decision may be based on the selected process, recipe, system operating parameters, and / or characteristics and / or properties of the process chamber, ESC, and / or substrate. The properties may change dynamically. In one embodiment, the impedance value is adjusted to follow a predetermined trajectory based on the change in the property. The predetermined trajectory may be, for example, a predetermined curve stored in memory. A table relating impedance values ​​to other values ​​and parameters may be stored in memory. If one or more impedance values ​​are to be changed, operation 1222 may be performed; otherwise, operation 1216 may be performed. In one embodiment, the power supplied to one or more electrodes is adjusted by changing the corresponding impedance value. This may change the stress, thickness, uniformity, refractive index, etch rate, deposition rate, and / or other characteristic and / or profile parameters of the substrate.

[0122] In step 1222, the system controller 121 adjusts one or more impedance values ​​of the tuning circuit, for example, by varying the inductance, capacitance, impedance, and / or resistance of the one or more impedances. The adjustment (or amount of adjustment) may be based on measured and / or determined parameters, selected process, recipe, system operating parameters, and / or characteristics and / or properties of the process chamber, ESC, and / or substrate. The system controller 121 may also adjust the impedance 128 of the second RF matching network 129 as described above. After operation 1222, operation 1216 may be performed.

[0123] In step 1224, the system controller 121 determines whether to modify the current process or perform another process. If to modify the current process or perform another process, step 1202 may be performed. If the current process is not to be modified and no further processes are to be performed, the method may end in step 1226.

[0124] The above steps are intended to be exemplary. The steps may be performed sequentially, sequentially, simultaneously, consecutively, within overlapping time periods, or in a different order depending on the application. Also, any of the steps may not be performed or may be skipped depending on the implementation and / or the order of events.

[0125] FIG. 13 shows an example substrate support 1300 including an outer ring electrode 1302 and two inner electrodes 1304, 1306. The electrodes 1302, 1304, 1306 are provided as an example of the two inner and outer electrodes shown in FIGS. 3, 5, and 7-11. The inner electrodes 1304, 1306 may be "D" shaped and are positioned radially inward of the outer ring electrode 1302. Gaps 1308 and 1310 exist between the inner electrodes 1304, 1306 and the outer ring electrode 1302. The outer ring electrode 1302 may include an outer ring 1311 and a linear central member 1312 extending between the inner electrodes 1304, 1306. Gaps 1314 and 1316 may exist between the inner electrodes 1304, 1306 and the central member 1312. The central member 1312 extends between the inner electrodes 1304, 1306 through a central region 1320 of the outer ring 1311, bisecting the central region 1320. In one embodiment, power is supplied to the outer ring electrode 1302 at the center of the central member 1312. Power may be provided to portions of the inner electrodes 1304, 1306 near the center of the central member 1312.

[0126] The above examples provide an RF tuning system with a tuning circuit having an impedance for setting and adjusting parameters of an electrode in an electrostatic chuck and / or other pedestal (or substrate support). The pedestal need not be an electrostatic chuck. This provides spatial adjustment of the power supplied to a plasma in a processing chamber (e.g., a PECVD reactor). These examples provide new control parameters for film deposition and uniformity. In one example involving an outer annular electrode and an inner circular electrode, the relative intensity of the plasma at the periphery of the substrate can be changed by modulating the power supplied to the electrodes. This can be achieved by modulating (i.e., adjusting) the corresponding impedance, as described above. Unlike varying the overall gas parameters or power, modulating the power supplied to the electrodes allows for the alteration of selected regions of the substrate film (e.g., the periphery of the substrate film) without necessarily changing the overall parameters affecting the entire substrate. This differs from prior techniques that involve utilizing metal or dielectric rings to alter the outer portion of the plasma, which can cause gas flow fluctuations and, as a result, have the overall effect of altering the substrate film rather than the periphery of the film.

[0127] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its applications, or uses. The broad teachings of the present disclosure may be embodied in a variety of forms. Accordingly, while the present disclosure includes specific examples, the true scope of the disclosure is not limited to those examples, as other variations will become apparent from a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each embodiment is described as having particular features, any one or more of the features described with respect to any embodiment of the present disclosure can be implemented in any of the other embodiments and / or combined with any of the features of the other embodiments, even if the combination is not expressly described. In other words, the above-described embodiments are not mutually exclusive, and substituting one or more embodiments for one another is within the scope of the present disclosure.

[0128] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers) are described using various terms, such as "connected," "engaged," "coupled," "adjacent," "adjacent," "on top of," "above," "below," and "disposed." When describing a relationship between first and second elements in this disclosure, unless expressly stated as "direct," the relationship may be a direct relationship where no other intervening elements exist between the first and second elements, or an indirect relationship where one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean the logical (A or B or C) using a non-exclusive logical OR, and not to mean "at least one of A, at least one of B, and at least one of C."

[0129] In some embodiments, the controller is part of a system, which may be part of the examples described above. Such systems may include semiconductor processing equipment, such as one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (e.g., wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling the operation of the system before, during, and after processing of semiconductor wafers or substrates. The electronics may be referred to as a "controller" and may control various components or subcomponents of the system. Depending on the processing requirements and / or type of system, the controller may be programmed to control any of the processes disclosed herein, such as supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position and motion settings, and wafer movement in and out of tools and other transfer tools and / or load locks connected or coupled to the specific system.

[0130] Generally, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer, or instructions for the system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to accomplish one or more process steps during processing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0131] In some embodiments, the controller may be part of or connected to a computer that is integrated with, connected to, or otherwise networked with the system, or a combination thereof. For example, the controller may be in the “cloud” or may be all or part of a fab host computer system that can enable remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, or examine trends or performance indicators from multiple manufacturing operations, to change parameters of a current process, configure processing steps according to a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network (which may include a local network or the Internet). The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, where the instructions specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed as well as the type of tool the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by having one or more separate controllers that are networked and operate toward a common purpose (such as the process and control described herein). One example of a distributed controller for such purposes is one or more integrated circuits on the chamber that communicate with one or more remotely located integrated circuits (e.g., at the platform level or located as part of a remote computer) that cooperate to control the process in the chamber.

[0132] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or utilized in the fabrication and / or manufacturing of semiconductor wafers.

[0133] As described above, depending on the processing step or steps being performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to carry containers of wafers to or from tool locations and / or load ports within a semiconductor fabrication factory.

Claims

1. 1. A substrate processing system for processing a substrate in a processing chamber, comprising: A power terminal and a substrate support configured to hold the substrate, the substrate support comprising a plurality of electrodes, the plurality of electrodes including a first electrode and a second electrode, the first electrode and the second electrode receiving power from a first power supply via the power supply terminals; a first tuning circuit connected to at least one of the first electrode and the second electrode; Equipped with The first tuning circuit is assigned to adjust one or more signals supplied to the first electrode, the first tuning circuit comprising: a first impedance set connected in series between the first electrode and the first power source, the first impedance set receiving a first signal from the first power source via the power source terminals, the one or more signals including the first signal; or a second impedance set connected between an output of the first power supply and a reference terminal, the second impedance set receiving the first signal from the first power supply via the power supply terminal.

2. 2. The substrate processing system of claim 1, wherein the first tuning circuit comprises the first impedance set and the second impedance set.

3. 10. The substrate processing system of claim 1, further comprising a system controller configured to adjust values ​​of the impedances of the first impedance set and the second impedance set.

4. 10. The substrate processing system of claim 1, wherein the first tuning circuit adjusts the voltage, current level, phase, power level, and / or frequency of the one or more signals supplied to the first electrode.

5. 10. The substrate processing system of claim 1, the first tuning circuit comprises the first impedance set and the second impedance set; The second impedance set is connected between the first impedance set and the reference terminal.

6. 10. The substrate processing system of claim 1, the first power supply comprises a matching network; the matching network is connected between the first power supply and the power supply terminal; The first tuning circuit is connected between the power supply terminal and the first electrode.

7. 10. The substrate processing system of claim 1, wherein the first tuning circuit is not included in a matching network.

8. 8. The substrate processing system of claim 7, wherein no matching network is connected between the first power supply and the first tuning circuit.

9. 10. The substrate processing system of claim 1, further comprising a second tuning circuit: the first tuning circuit is configured to adjust a voltage, a current level, a phase, a power level, or a frequency of the first signal provided from the first power supply to the first electrode; the second tuning circuit is configured to adjust a voltage, a current level, a phase, a power level, or a frequency of the first signal provided from the first power supply to the second electrode; The one or more signals include the first signal.

10. 10. The substrate processing system of claim 1, further comprising: a second power supply; and a second tuning circuit; the first tuning circuit is configured to adjust a voltage, a current level, a phase, a power level, or a frequency of the first signal provided from the first power supply to the first electrode; the second tuning circuit is configured to adjust a voltage, a current level, a phase, a power level, or a frequency of a second signal provided from the second power supply to the second electrode; The one or more signals include the first signal and the second signal.

11. The substrate processing system of claim 1 , wherein the plurality of electrodes are arranged concentrically.

12. 10. The substrate processing system of claim 1, further comprising a second tuning circuit and a third tuning circuit; the plurality of electrodes includes a third electrode; the first tuning circuit is coupled to the first electrode and configured to modulate the first signal before being received at the first electrode; the second tuning circuit is connected to the second electrode and configured to modulate the first signal or the second signal before being received at the second electrode; The substrate processing system, wherein the third tuning circuit is connected to the third electrode and configured to modulate the first signal or the third signal before being received by the third electrode.

13. 13. The substrate processing system of claim 12, wherein the first electrode, the second electrode, and the third electrode are concentrically arranged.

14. 13. The substrate processing system of claim 12, the substrate support is an electrostatic chuck; the first electrode and the second electrode are clamping electrodes and are configured to receive a clamping voltage to clamp the substrate to the substrate support; the third electrode is a bias electrode and is configured to receive a bias voltage; The substrate processing system, wherein the third signal is received by the third tuning circuit from a third power supply.

15. 13. The substrate processing system of claim 12, the substrate support is an electrostatic chuck; the first electrode is a clamp electrode; the second electrode and the third electrode are bias electrodes, The second signal is received by the second tuning circuit from a second power supply.

16. 10. The substrate processing system of claim 1, the substrate support is an electrostatic chuck; the first electrode is a clamp electrode; the second electrode is a clamp electrode; the plurality of electrodes includes an electrode ring; the first tuning circuit comprises the first impedance set, a third impedance set, and a fourth impedance set; the first impedance set comprises a first inductor and a first capacitor connected between the first clamping electrode and the first power supply; the third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the first power supply; The fourth impedance set comprises a third inductor and a third capacitor connected between the second clamping electrode and the first power supply.

17. 10. The substrate processing system of claim 1, the substrate support is an electrostatic chuck; the first electrode is a clamp electrode; the second electrode is a clamp electrode; the plurality of electrodes includes an electrode ring; the first tuning circuit comprises the second impedance set, a third impedance set, and a fourth impedance set; the second impedance set includes a first inductor and a first capacitor connected in parallel between a first electrode terminal and the reference terminal, the first electrode terminal being connected between the first clamping electrode and the first power supply; the third impedance set includes a second inductor and a second capacitor connected in parallel between a second electrode terminal and the reference terminal, the second electrode terminal being connected between the electrode ring and the first power supply; the fourth impedance set comprises a third inductor and a third capacitor connected in parallel between a third electrode terminal and the reference terminal, the third electrode terminal being connected between the second clamp electrode and the first power supply.

18. 10. The substrate processing system of claim 1, the substrate support is an electrostatic chuck; the first electrode is a clamp electrode; the second electrode is a clamp electrode; the plurality of electrodes includes an electrode ring; the first tuning circuit comprises the first impedance set, the second impedance set, a third impedance set, a fourth impedance set, a fifth impedance set, and a sixth impedance set; the first impedance set comprises a first inductor and a first capacitor connected between the first clamping electrode and the first power supply; the third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the first power supply; the fourth impedance set comprises a third inductor and a third capacitor connected between the second clamping electrode and the first power supply; the second impedance set includes a fourth inductor and a fourth capacitor connected in parallel between a first electrode terminal and the reference terminal, the first electrode terminal being connected between the first clamping electrode and the first power supply; the fifth impedance set includes a fifth inductor and a fifth capacitor connected in parallel between a second electrode terminal and the reference terminal, the second electrode terminal being connected between the electrode ring and the first power supply; the sixth impedance set comprises a sixth inductor and a sixth capacitor connected in parallel between a third electrode terminal and the reference terminal, the third electrode terminal being connected between the second clamp electrode and the first power supply.

19. 20. The substrate processing system of claim 18, wherein a second power supply is connected to the first terminal, the second terminal, and the third terminal.

20. 10. The substrate processing system of claim 1, further comprising a second tuning circuit: the substrate support is an electrostatic chuck; the first electrode is a first clamping electrode; the second electrode is a second clamping electrode; the plurality of electrodes includes an electrode ring; the first tuning circuit comprises the first impedance set, a third impedance set, and a fourth impedance set; the second tuning circuit comprises the second impedance set, a fifth impedance set, and a sixth impedance set; the first impedance set comprises a first inductor and a first capacitor connected between the first clamping electrode and the first power supply; the third impedance set includes a second inductor and a second capacitor connected between the electrode ring and a second power source; the fourth impedance set comprises a third inductor and a third capacitor connected between the second clamping electrode and the first power supply; the second impedance set includes a fourth inductor and a fourth capacitor connected in parallel between a first electrode terminal and the reference terminal, the first electrode terminal being connected between the first clamping electrode and the first power supply; the fifth impedance set includes a fifth inductor and a fifth capacitor connected in parallel between a second electrode terminal and the reference terminal, the second electrode terminal being connected between the electrode ring and the second power supply; the sixth impedance set comprises a sixth inductor and a sixth capacitor connected in parallel between a third electrode terminal and the reference terminal, the third electrode terminal being connected between the second clamp electrode and the first power supply.

21. 2. The substrate processing system according to claim 1, wherein no matching network is connected between the power supply terminal and the plurality of electrodes.

22. 2. The substrate processing system of claim 1, wherein power from the first power source is split to provide a portion of the power to each of the plurality of electrodes.

23. 10. The substrate processing system of claim 1, wherein the first impedance set and the second impedance set comprise variable inductances.

24. 10. The substrate processing system of claim 1, further comprising: the processing chamber; the first power source; a controller configured to adjust the impedances of the first impedance set and the second impedance set; A substrate processing system comprising:

25. 1. A substrate processing system for processing a substrate in a processing chamber, comprising: a substrate support configured to hold the substrate, the substrate support comprising a plurality of electrodes, the plurality of electrodes including a first electrode, a second electrode, and a third electrode; a first impedance connected between the first electrode and the third electrode; a second impedance connected between the second electrode and the third electrode; Equipped with the first impedance is connected (i) between the first electrode and the second impedance, and (ii) between a first power source and the second impedance; the second impedance is connected (i) between the second electrode and the first impedance, and (ii) between a second power source and the first impedance; the first impedance and the second impedance are assigned to adjust (i) a first signal provided by the first power supply to the first electrode, and (ii) a second signal provided by the second power supply to the second electrode.

26. 26. The substrate processing system of claim 25, wherein the first impedance is connected in series with the second impedance.

27. 26. The substrate processing system of claim 25, the first impedance is connected between the first electrode and a third power source; The second impedance is connected between the second electrode and the third power supply.

28. 28. The substrate processing system of claim 27, wherein the third power supply is connected to the third electrode.

29. 26. The substrate processing system of claim 25, further comprising a third impedance and a fourth impedance; the third impedance is connected (i) between the first electrode and the third electrode, (ii) between the first electrode and the fourth impedance, and (iii) between the first power source and the fourth impedance; the fourth impedance is connected (i) between the second electrode and the third electrode, (ii) between the second electrode and the third impedance, and (iii) between the second power source and the third impedance; the third impedance and the fourth impedance are assigned to adjust (i) the first signal supplied to the first electrode by the first power supply and (ii) the second signal supplied to the second electrode by the second power supply.

30. 30. The substrate processing system of claim 29, the first impedance and the third impedance are connected in parallel between the first electrode and a third power source; The second impedance and the fourth impedance are connected in parallel between the second electrode and the third power supply.

31. 31. The substrate processing system of claim 30, wherein the third power supply is connected to the third electrode.

32. 26. The substrate processing system of claim 25, wherein the first impedance set and the second impedance set comprise a variable inductance.

33. 26. The substrate processing system of claim 25, further comprising: the processing chamber; the first power source; a controller configured to adjust the impedances of the first impedance set and the second impedance set; A substrate processing system comprising:

34. 1. A method of operating a substrate processing system, comprising: selecting a treatment; determining a recipe including system operating parameters for the selected process; controlling a plurality of actuators to set the system operating parameters; setting an impedance value of a first tuning circuit based on the selected process and the system operating parameters, the first tuning circuit connected to a first electrode in a substrate support, the first tuning circuit assigned to adjust a signal supplied to the first electrode, the first tuning circuit comprising: a first impedance set connected in series between the first electrode and a first power source, the first impedance set receiving a first signal from the first power source, the one or more signals including the first signal; or a second impedance set connected between an output of the first power supply and a reference terminal, the second impedance set receiving the first signal from the first power supply; placing a substrate on the substrate support in a processing chamber; performing a processing operation for the selected process, the processing operation including supplying power from the first power supply to a plurality of electrodes in the substrate support, the plurality of electrodes including the first electrode and a second electrode, the first electrode and the second electrode receiving power from the first power supply via power supply terminals; A method comprising:

35. 35. The method of claim 34, further comprising adjusting the impedance value of the first tuning circuit while performing the processing operation.

36. 35. The method of claim 34, further comprising, during performing said processing operations: collecting sensor output data; determining one or more parameters based on the sensor output data; adjusting the impedance value of the first tuning circuit based on the one or more parameters; A method comprising:

37. 35. The method of claim 34, further comprising: determining a characteristic or property of the processing chamber; setting the impedance value of the first tuning circuit based on the characteristic or the property; A method comprising:

38. 35. The method of claim 34, further comprising: determining a characteristic or property of the substrate support; setting the impedance value of the first tuning circuit based on the characteristic or the property; A method comprising:

39. 39. The method of claim 38, further comprising adjusting the impedance of at least one of the first impedance set or the second impedance set based on the change in the characteristic to follow a respective trajectory.

40. 40. The method of claim 39, further comprising: The above features, The above characteristics, one or more other features of the substrate, the substrate support, or the processing chamber; and one or more other characteristics of the substrate, the substrate support, or the processing chamber; calculating or determining the trajectory based on at least one of:

41. 35. The method of claim 34, further comprising: determining a characteristic or property of the substrate; setting the impedance value of the first tuning circuit based on the characteristic or the property; A method comprising:

42. 35. The method of claim 34, further comprising: applying a clamping voltage to the first electrode by the first power supply to clamp the substrate to the substrate support; applying a bias voltage to the second electrode; adjusting the clamp voltage and the bias voltage by the first tuning circuit or the second tuning circuit; Equipped with The method wherein the substrate support is an electrostatic chuck.

43. 43. The method of claim 42, wherein the first tuning circuit comprises the first impedance and the second impedance.

44. 43. The method of claim 42, further comprising: adjusting the value of the impedance of the first tuning circuit to adjust the clamp voltage supplied to the first electrode; adjusting the impedance value of the second tuning circuit to adjust the bias voltage supplied to the second electrode; Equipped with The method wherein the substrate support is an electrostatic chuck.

45. 37. The method of claim 36, further comprising adjusting the potential difference of the plasma at each pair of points above and along a surface of the substrate support by adjusting the impedance value of the first tuning circuit.

46. 37. The method of claim 36, further comprising adjusting an impedance value in a bias RF matching network based on the impedance value of the first tuning circuit, the bias RF matching network being connected between the power supply and the first tuning circuit.

47. 1. A substrate processing system for processing a substrate in a processing chamber, comprising: A power terminal and a substrate support configured to hold the substrate, the substrate support comprising a plurality of electrodes, the plurality of electrodes including a first electrode and a second electrode; a first tuning circuit connected to the first electrode and assigned to adjust the impedance of the first electrode, the first tuning circuit comprising a first impedance set connected to the first electrode and ground; a second tuning circuit connected to the second electrode and assigned to adjust the impedance of the second electrode, the second tuning circuit comprising a second impedance set connected to the second electrode and the ground; A substrate processing system comprising:

48. 48. The substrate processing system of claim 47, wherein the first tuning circuit is connected in series between the first electrode and the ground.

49. 49. The substrate processing system of claim 48, wherein the first tuning circuit comprises an inductor and a capacitor.

50. 50. The substrate processing system of claim 49, wherein the second tuning circuit is connected in series between the second electrode and the ground.

51. 51. The substrate processing system of claim 50, wherein the second tuning circuit comprises an inductor and a capacitor.

52. 48. The substrate processing system of claim 47, the first tuning circuit is connected between the first electrode and the second electrode; The first electrode and the second electrode are connected to the ground.

53. 53. The substrate processing system of claim 52, further comprising: a third electrode connected to the ground; a third tuning circuit connected between the second electrode and the third electrode; A substrate processing system comprising:

54. 54. The substrate processing system of claim 53, the first tuning circuit comprises a first inductor and a first capacitor; The second tuning circuit comprises a second inductor and a second capacitor.

55. 48. The substrate processing system of claim 47, wherein the first tuning circuit and the second tuning circuit comprise variable inductances.

56. 48. The substrate processing system of claim 47, further comprising: the processing chamber; a controller configured to adjust the impedances of the first impedance set and the second impedance set; A substrate processing system comprising:

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