Detection device

Abstract

To suppress influences of noise upon a sensor element in a detection device comprising a switching element which is electrically connected to the sensor element.SOLUTION: A detection device 1 comprises: a substrate 40; a switching element 50 including a gate electrode 51, which is disposed on an opposite side of a source electrode 52 and a drain electrode 53 with a second semiconductor film 54 interposed therebetween, and disposed on the substrate 40; a third insulation layer 43 which is disposed in a state where the second semiconductor film 54 is covered, and includes a first contact hole 43a overlapping a part of the second semiconductor film 54 in a planar view; and a sensor element 10 which is electrically connected with the drain electrode 53. One electrode between the source electrode 52 and the drain electrode 53 overlaps the gate electrode 51 in the planar view and is electrically connected with the semiconductor film inside of the first contact hole 43a. Inside of the first contact hole 43a, the one electrode and the second semiconductor film 54 are opposed with each other while being isolated from a first partial surface S1 that is a side face of the first contact hole 43a.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a detection device. [Background technology]

[0002] Patent Document 1 discloses a display device having switching elements electrically connected to a plurality of pixel electrodes, each of which has a gate electrode and a source electrode overlapping each other in a plan view of the display device. Also, the gate electrode and the drain electrode of the switching element overlap each other in a plan view of the display device. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2023-150465 Summary of the Invention [Problem to be solved by the invention]

[0004] The switching element of Patent Document 1 may be applied to a detection device including multiple sensor elements. The switching element is electrically connected to the sensor elements. In this case, noise generated by capacitance between the gate electrode and source electrode or between the gate electrode and drain electrode of the switching element may affect the sensor elements.

[0005] The present disclosure aims to suppress the influence of noise on a sensor element in a detection device having a switching element electrically connected to the sensor element. [Means for solving the problem]

[0006] The detection device of the present disclosure has a substrate, a source electrode, a drain electrode, a semiconductor film electrically connected to the source electrode and the drain electrode, and a gate electrode arranged on the opposite side of the semiconductor film from the source electrode and the drain electrode, and comprises: a switching element arranged on the substrate; a first insulating film arranged between the gate electrode and the semiconductor film; a second insulating film arranged on the first insulating film so as to cover the semiconductor film and having a first contact hole that overlaps with a part of the semiconductor film in a planar view; and a sensor element electrically connected to the drain electrode, wherein one of the source electrode and the drain electrode overlaps with the gate electrode in a planar view and is electrically connected to the semiconductor film inside the first contact hole, and within the first contact hole, the one electrode and the semiconductor film face each other while being separated from a first partial surface of a side surface of the first contact hole. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view of a detection device according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is a diagram showing the circuit configuration of the detection device. [Figure 3] FIG. 3 is a plan view of one sensor element. [Figure 4] FIG. 4 is a cross-sectional view of the detection device taken along line IV-IV shown in FIG. [Figure 5] FIG. 5 is a cross-sectional view of a detection device according to a modified example of the embodiment of the present disclosure. [Figure 6] FIG. 6 is a cross-sectional view of a detection device according to a modified example of the embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0008] Each embodiment of the present disclosure will be described below with reference to the drawings. The present disclosure is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially the same. Furthermore, the components described below can be combined as appropriate.

[0009] It should be noted that the disclosure is merely an example, and appropriate modifications that a person skilled in the art can easily conceive of while maintaining the gist of the present disclosure are naturally included within the scope of the present disclosure. Furthermore, in order to clarify the explanation, the drawings may show the width, thickness, shape, etc. of each part schematically compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present disclosure. Furthermore, in this specification and each drawing, elements similar to those described above with respect to the previous drawings may be given the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0010] The X and Y directions shown in the drawings correspond to directions parallel to the plate surface (front surface) of the substrate 40 included in the detection device 1. The +X and -X sides of the X direction and the +Y and -Y sides of the Y direction correspond to the sides of the detection device 1. The Z direction corresponds to the thickness direction of the detection device 1, with the +Z side of the Z direction corresponding to the front side of the detection device 1 and the -Z side of the Z direction corresponding to the rear side of the detection device 1. In addition, in this specification, "plan view" means viewing the detection device 1 from the +Z side toward the -Z side along the Z direction. Note that the X, Y, and Z directions are merely examples, and the present disclosure is not limited to these directions.

[0011] FIG. 1 is a plan view of a detection device 1 according to an embodiment of the present disclosure. The detection device 1 detects predetermined information of a detection object. The detection object is, for example, a user's finger. The predetermined information is, for example, the unevenness of the surface of the user's finger and palm. The predetermined information may also be biometric information of the user. The biometric information may include a blood vessel pattern, a fingerprint pattern, a pulse wave, a pulse rate, and blood oxygen saturation. A control device that drives the detection device 1 is electrically connected to the detection device 1.

[0012] The detection device 1 has a plate shape. A detection area DA with which an object to be detected comes into contact is provided on the front surface of the detection device 1. In a plan view, a plurality of sensor elements 10 are arranged in a matrix along the X and Y directions in the detection area DA.

[0013] The detection device 1 also includes a gate line driving circuit 20 and a signal line selection circuit 30 at positions outside the detection area DA in a plan view.

[0014] 2 is a diagram showing the circuit configuration of the detection device 1. The detection device 1 has a substrate 40, and a plurality of gate lines GL and a plurality of signal lines SL arranged on the substrate 40.

[0015] The gate lines GL extend in the X direction and are arranged in the Y direction. The gate lines GL are electrically connected to a gate line driving circuit 20.

[0016] The signal lines SL extend in the Y direction and are aligned in the X direction. The signal lines SL are electrically connected to a signal line selection circuit 30. The signal line selection circuit 30 is, for example, a multiplexer. The gate lines GL and the signal lines SL are made of titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), molybdenum (Mo), or an alloy thereof.

[0017] In plan view, the area surrounded by two adjacent gate lines GL and two adjacent sensor lines includes the sensor element 10.

[0018] The sensor element 10 is an optical sensor and includes a photodiode 11 and a capacitance element 12.

[0019] The photodiode 11 outputs a signal according to the light irradiated onto the detection area DA. The photodiode 11 is, for example, a PIN (Positive Intrinsic Negative) photodiode.

[0020] FIG. 3 is a plan view of one sensor element 10. As shown in FIG.

[0021] The photodiode 11 includes an upper electrode 11a, a first semiconductor film 11b, and a lower electrode 11c. The upper electrode 11a, the first semiconductor film 11b, and the lower electrode 11c are stacked in this order from the +Z side to the -Z side along the Z direction. The upper electrode 11a, the first semiconductor film 11b, and the lower electrode 11c are rectangular in plan view, but needless to say, are not limited to this shape.

[0022] The upper electrode 11a corresponds to the cathode electrode of the photodiode 11. The upper electrode 11a is a light-transmitting conductive layer made of, for example, ITO (Indium Tin Oxide).

[0023] The first semiconductor film 11b includes an i-type semiconductor film, a p-type semiconductor film, and an n-type semiconductor film, each of which is made of amorphous silicon (a-Si). The n-type semiconductor film, the i-type semiconductor film, and the p-type semiconductor film are stacked in this order along the Z direction.

[0024] The lower electrode 11c corresponds to the anode electrode of the photodiode 11. The lower electrode 11c is made of a metal material such as molybdenum (Mo) or aluminum (Al). The lower electrode 11c may also be a laminated film in which a plurality of these metal materials are laminated. The lower electrode 11c may also be a light-transmitting conductive layer such as ITO or IZO (Indium Zinc Oxide).

[0025] The capacitive element 12 shown in FIG. 2 is a capacitance (sensor capacitance) formed in the photodiode 11.

[0026] 2 and 3, the detection device 1 further includes a plurality of switching elements 50. The switching elements 50 are electrically connected to the sensor element 10. The switching elements 50 are transistors. As shown in FIG. 2, a gate electrode 51 of the switching element 50 is electrically connected to a gate line GL. A source electrode 52 (corresponding to "one electrode") of the switching element 50 is electrically connected to a signal line SL. A drain electrode 53 (corresponding to "the other electrode") of the switching element 50 is electrically connected to the anode electrode (lower electrode 11c) of the photodiode 11 and the capacitive element 12, respectively.

[0027] FIG. 4 is a cross-sectional view of the detection device 1 taken along line IV-IV shown in FIG.

[0028] The switching element 50 is disposed on the substrate 40. Specifically, the switching element 50 is an n-channel MOS (Metal Oxide Semiconductor) type thin film transistor (TFT (Thin Film Transistor)). The switching element 50 further includes a second semiconductor film 54 (corresponding to a "semiconductor film") electrically connected to the source electrode 52 and the drain electrode 53.

[0029] As shown in FIGS. 3 and 4, the second semiconductor film 54 has a strip shape extending along the X direction and overlaps with the gate line GL in a plan view.

[0030] 4, a first insulating layer 41 is disposed on the front surface of the substrate 40, and gate lines GL are disposed on the front surface of the first insulating layer 41. In addition, a second insulating layer 42 (corresponding to a "first insulating film") is disposed on the front surface of the first insulating layer 41 so as to cover the gate lines GL.

[0031] The second semiconductor film 54 is disposed on the front surface of the second insulating layer 42. In other words, the second insulating layer 42 is disposed between the gate line GL and the second semiconductor film 54.

[0032] The second semiconductor film 54 is an oxide semiconductor. More preferably, the second semiconductor film 54 is a transparent amorphous oxide semiconductor (TAOS) among oxide semiconductors. The second semiconductor film 54 may be a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, polysilicon, low temperature polycrystalline silicon (LTPS), or the like.

[0033] A portion of the gate line GL that overlaps with the second semiconductor film 54 in a plan view functions as the gate electrode 51. A channel region is formed in the portion of the second semiconductor film 54 that overlaps with the gate line GL (gate electrode 51).

[0034] Furthermore, a third insulating layer 43 (corresponding to a "second insulating film") is disposed on the front surface of the second insulating layer 42 in a state covering the second semiconductor film 54. The third insulating layer 43 has a first contact hole 43a and a second contact hole 43b. In the present disclosure, the first contact hole 43a and the second contact hole 43b refer to recesses or through holes in the third insulating layer 43.

[0035] The first contact hole 43a and the second contact hole 43b are aligned along the X direction. The first contact hole 43a and the second contact hole 43b each overlap with a part of the second semiconductor film 54 in a plan view.

[0036] Specifically, the first contact hole 43a overlaps with the -X side end of the second semiconductor film 54 in a planar view. In other words, the -X side end of the second semiconductor film 54 is located inside the first contact hole 43a. Furthermore, the second contact hole 43b overlaps with the +X side end of the second semiconductor film 54 in a planar view. In other words, the +X side end of the second semiconductor film 54 is located inside the second contact hole 43b.

[0037] The source electrode 52 is disposed on the third insulating layer 43. The source electrode 52 is part of the signal line SL and includes a portion electrically connected to the second semiconductor film 54. Specifically, the source electrode 52 is a portion of the signal line SL that overlaps with the second semiconductor film 54 in a planar view. The source electrode 52 also overlaps with the gate line GL in a planar view. The source electrode 52 is located on the opposite side of the gate electrode 51 with the second semiconductor film 54 interposed therebetween. The source electrode 52 is electrically connected to the second semiconductor film 54 inside the first contact hole 43a.

[0038] In the first contact hole 43a, the source electrode 52 and the second semiconductor film 54 face each other while being separated from each other by a first partial surface S1 of the side surface of the first contact hole 43a. The first partial surface S1 is a part of the side surface of the first contact hole 43a. The bottom surface of the first contact hole 43a has a first region R1 that does not overlap with the second semiconductor film 54 and the source electrode 52 in a plan view.

[0039] The source electrode 52 has a first opposing surface Sa1 that faces, but is separated from, the first partial surface S1 of the side surface of the first contact hole 43a within the first contact hole 43a. The second semiconductor film 54 has a second opposing surface Sa2 that faces, but is separated from, the first partial surface S1 of the side surface of the first contact hole 43a within the first contact hole 43a. The first opposing surface Sa1 and the second opposing surface Sa2 are each planar. The first opposing surface Sa1 and the second opposing surface Sa2 are continuous. The first opposing surface Sa1 and the second opposing surface Sa2 are on the same plane.

[0040] In addition, within the first contact hole 43a, a first gap G1 overlapping with the first region R1 in plan view is present between the first opposing surface Sa1, the second opposing surface Sa2 and the first partial surface S1 of the side surface of the first contact hole 43a.

[0041] Before the etching process for forming the source electrode 52, the first gap G1 and the first region R1 do not exist. At this time, the material of the second semiconductor film 54 and the material of the source electrode 52 are stacked inside the first contact hole 43a. During the etching process for forming the source electrode 52, when the portion of the material of the source electrode 52 where no resist is applied is removed, the material of the second semiconductor film 54 is partially removed. As a result, the first gap G1 and the first region R1 are formed, and a first opposing surface Sa1 and a second opposing surface Sa2 that are isolated from the first partial surface S1 on the side surface of the first contact hole 43a are formed.

[0042] 3, the signal line SL has a first signal portion SL1 and a second signal portion SL2. The width of the second signal portion SL2 is smaller than the width of the first signal portion SL1. The second signal portion SL2 includes the source electrode 52 and overlaps with the second semiconductor film 54 and the gate electrode 51 (gate line GL) in a plan view.

[0043] The drain electrode 53 is a strip-shaped electrode extending in the Y direction on the +X side of the source electrode 52. The end of the drain electrode 53 on the +Y side is electrically connected to the lower electrode 11c of the sensor element 10. The drain electrode 53 has a first drain portion 53a and a second drain portion 53b. The width of the second drain portion 53b is smaller than the width of the first drain portion 53a. The second drain portion 53b is a portion that overlaps with the second semiconductor film 54 and the gate electrode 51 (gate line GL) in a plan view.

[0044] 4, the drain electrode 53 is disposed on the third insulating layer 43. The drain electrode 53 overlaps with the gate line GL in a plan view. The drain electrode 53 is located on the opposite side of the gate electrode 51 with the second semiconductor film 54 interposed therebetween. The drain electrode 53 is electrically connected to the second semiconductor film 54 inside the second contact hole 43b.

[0045] In the second contact hole 43b, the drain electrode 53 and the second semiconductor film 54 face each other and are spaced apart from each other at a second partial surface S2 of the side surface of the second contact hole 43b. The second partial surface S2 is part of the side surface of the second contact hole 43b. The bottom surface of the second contact hole 43b has a second region R2 that does not overlap with the second semiconductor film 54 and the drain electrode 53 in a plan view.

[0046] The drain electrode 53 has a third opposing surface Sa3 that faces the second partial surface S2 of the side surface of the second contact hole 43b while being separated from the second partial surface S2 of the side surface of the second contact hole 43b within the second contact hole 43b. The second semiconductor film 54 has a fourth opposing surface Sa4 that faces the second partial surface S2 of the side surface of the second contact hole 43b while being separated from the second partial surface S2 of the side surface of the second contact hole 43b within the second contact hole 43b. The third opposing surface Sa3 and the fourth opposing surface Sa4 are continuous. The third opposing surface Sa3 and the fourth opposing surface Sa4 are each planar. The third opposing surface Sa3 and the fourth opposing surface Sa4 are on the same plane.

[0047] In addition, within the second contact hole 43b, a second gap G2 overlapping with the second region R2 in plan view is present between the third opposing surface Sa3 and the fourth opposing surface Sa4 and the second partial surface S2 of the side surface of the second contact hole 43b.

[0048] Before the etching process for forming the drain electrode 53, the second gap G2 and the second region R2 do not exist. At this time, the material of the second semiconductor film 54 and the material of the drain electrode 53 are stacked inside the second contact hole 43b. During the etching process for forming the drain electrode 53, when the portion of the material of the drain electrode 53 where the resist is not applied is removed, the material of the second semiconductor film 54 is partially removed. As a result, the second gap G2 and the second region R2 are formed, and a third opposing surface Sa3 and a fourth opposing surface Sa4 that are isolated from the second partial surface S2 on the side surface of the second contact hole 43b are formed.

[0049] Furthermore, a fourth insulating layer 44 is disposed on the front surface of the third insulating layer 43 in a state covering the source electrode 52 and the drain electrode 53. The fourth insulating layer 44 is also located in the first gap G1 and the second gap G2. The first insulating layer 41, the second insulating layer 42, the third insulating layer 43, and the fourth insulating layer 44 are made of inorganic insulating films. The inorganic insulating film is formed of, for example, silicon oxide (SiO2), silicon nitride (SiN), or the like. Furthermore, the inorganic insulating film is not limited to a single film, and multiple films may be stacked.

[0050] Furthermore, a fifth insulating layer 45 is disposed on the front surface of the fourth insulating layer 44, and a sealing film 46 is disposed on the front surface of the fifth insulating layer 45. The photodiode 11 is disposed between the fourth insulating layer 44 and the fifth insulating layer 45.

[0051] An inorganic film such as a silicon nitride film or an aluminum oxide film, or a resin film such as an acrylic film is used for the fifth insulating layer 45 and the sealing film 46. The fifth insulating layer 45 and the sealing film 46 are not limited to a single film, and a plurality of films combining the above inorganic films and resin films may be stacked.

[0052] Next, the operation of the detection device 1 will be described.

[0053] Light reflected by or transmitted through the object to be detected enters the detection area DA of the detection device 1. When light is irradiated onto the sensor element 10, a current corresponding to the amount of light flows through the photodiode 11, and charge is accumulated in the capacitance element 12. The control device controls the gate line drive circuit 20 to sequentially select multiple gate lines GL. When the selected switching element 50 is turned on, a current flows through the signal line SL corresponding to the charge accumulated in the capacitance element 12 of the sensor element 10 corresponding to the on-state switching element 50. The signal line SL is connected to the control device via the signal line selection circuit 30. As a result, the detection device 1 detects a signal corresponding to the amount of light irradiated onto the photodiode 11 for each sensor element 10. The control device generates predetermined information about the object to be detected (e.g., a user's fingerprint pattern) based on the signal.

[0054] As described above, in the first contact hole 43a, the source electrode 52 and the second semiconductor film 54 face each other while being separated from the first partial surface S1 of the side surface of the first contact hole 43a. This reduces the area where the source electrode 52 and the gate electrode 51 overlap in a plan view compared to when the source electrode 52 is in contact with the first partial surface S1 of the side surface of the first contact hole 43a and the first gap G1 does not exist, thereby reducing the capacitance between the source electrode 52 and the gate electrode 51. This makes it possible to suppress noise caused by the capacitance between the source electrode 52 and the gate electrode 51 from affecting the sensor element 10.

[0055] Furthermore, within the second contact hole 43b, the drain electrode 53 and the second semiconductor film 54 face each other while being separated from the second partial surface S2 on the side surface of the second contact hole 43b. This reduces the area where the drain electrode 53 and the gate electrode 51 overlap in plan view compared to when the drain electrode 53 is in contact with the second partial surface S2 on the side surface of the second contact hole 43b and the second gap G2 does not exist, thereby reducing the capacitance between the drain electrode 53 and the gate electrode 51. This makes it possible to suppress noise caused by the capacitance between the drain electrode 53 and the gate electrode 51 from affecting the sensor element 10.

[0056] Although preferred embodiments of the present disclosure have been described above, the present disclosure is not limited to such embodiments. The contents disclosed in the embodiments are merely examples, and various modifications are possible within the scope of the present disclosure. Appropriate modifications made within the scope of the present disclosure also naturally fall within the technical scope of the present disclosure.

[0057] For example, the upper electrode 11a may correspond to the anode electrode in the photodiode 11. In this case, the lower electrode 11c of the photodiode 11 corresponds to the cathode electrode.

[0058] The first opposing surface Sa1 and the second opposing surface Sa2 may be curved surfaces. The first opposing surface Sa1 and the second opposing surface Sa2 do not have to be located on the same plane.

[0059] Furthermore, in the second contact hole 43b, the third opposing surface Sa3 and the second opposing surface Sa2 may be in contact with the second partial surface S2 of the side surface of the second contact hole 43b.

[0060] The width of the signal line SL may be constant, and the width of the drain electrode 53 may be constant.

[0061] 5 is a cross-sectional view of a detection device 1 according to a modified example of the embodiment of the present disclosure. In this modified example, the second semiconductor film 154 has a first partial film 154a, a second partial film 154b, and a third partial film 154c. The first partial film 154a, the second partial film 154b, and the third partial film 154c are separate bodies.

[0062] The first partial film 154a corresponds to the second semiconductor film 54 in the above embodiment. That is, the first partial film 154a has a second opposing surface Sa2 and a fourth opposing surface Sa4, and is electrically connected to the source electrode 52 and the drain electrode 53.

[0063] The second partial film 154b and the third partial film 154c are each electrically isolated from the first partial film 154a and overlap the third insulating layer 43 in a plan view.

[0064] Specifically, the second partial film 154b is located on the opposite side of the first partial film 154a in the X direction across the first contact hole 43a, and the third partial film 154c is located on the opposite side of the first partial film 154a in the X direction across the second contact hole 43b.

[0065] Before the etching process for forming the source electrode 52 and the drain electrode 53, the material of the second semiconductor film 154 is a single component having connected portions between the first partial film 154a and the second partial film 154b, and between the second partial film 154b and the third partial film 154c. The etching process removes the connected portions, dividing the material of the second semiconductor film 154 and forming the second semiconductor film 154 having the first partial film 154a, the second partial film 154b, and the third partial film 154c.

[0066] 6 is a cross-sectional view of a detection device 1 according to a modified example of the embodiment of the present disclosure. In this modified example, the detection device 1 further includes a second gate electrode 255. The second gate electrode 255 integrally includes a main body portion 255a and a connection portion 255b.

[0067] The main body portion 255a is disposed between the fourth insulating layer 44 and the fifth insulating layer 45. The main body portion 255a is located on the opposite side of the gate electrode 51 across the second semiconductor film 54, the source electrode 52, and the drain electrode 53. The main body portion 255a overlaps with the second semiconductor film 54, the source electrode 52, the drain electrode 53, and the gate electrode 51 in a planar view.

[0068] The connection portion 255b is located closer to the −X side than the signal line SL, and is electrically connected to the gate electrode 51 through the third contact hole 243c.

[0069] The second gate electrode 255 suppresses noise from being generated in the switching element 50 when X-rays are incident on the detection area DA.

[0070] Furthermore, by arranging the source electrode 52 and the drain electrode 53 in the same manner as in the above embodiment, it is possible to suppress the influence of noise generated by the capacitance between the gate electrode 51 and the second gate electrode 255 and the source electrode 52, and noise generated by the capacitance between the gate electrode 51 and the second gate electrode 255 and the drain electrode 53 on the sensor element 10.

[0071] Furthermore, other effects and advantages brought about by the aspects described in the above embodiments that are clear from the description in this specification or that can be appropriately thought of by a person skilled in the art are naturally understood to be brought about by the present disclosure. [Explanation of symbols]

[0072] 1. Detection device 10 Sensor element 11 Photodiode 40 boards 41 First insulating layer 42 Second insulating layer (first insulating film) 43 Third insulating layer (second insulating film) 43a First Contact Hole 43b Second contact hole 50 Switching element 51 gate electrode 52 Source electrode 53 Drain electrode 54 Second semiconductor film (semiconductor film) 154a 1st partial membrane 154b 2nd partial membrane S1 1st partial surface S2 2nd partial surface Sa1 First opposing surface Sa2 2nd facing surface

Claims

1. A substrate; a switching element disposed on the substrate, the switching element having a source electrode, a drain electrode, a semiconductor film electrically connected to the source electrode and the drain electrode, and a gate electrode disposed on the opposite side of the semiconductor film from the source electrode and the drain electrode; a first insulating film disposed between the gate electrode and the semiconductor film; a second insulating film disposed on the first insulating film so as to cover the semiconductor film and having a first contact hole overlapping a part of the semiconductor film in a plan view; a sensor element electrically connected to the drain electrode, one of the source electrode and the drain electrode overlaps with the gate electrode in a plan view and is electrically connected to the semiconductor film inside the first contact hole; In the first contact hole, the one electrode and the semiconductor film face each other while being spaced apart from a first partial surface of a side surface of the first contact hole. Detection device.

2. the one electrode has a first opposing surface that faces a first partial surface of a side surface of the first contact hole in a state separated from the first partial surface, within the first contact hole; the semiconductor film has a second opposing surface that faces a side surface of the first contact hole in a state of being separated from the side surface of the first contact hole, The first opposing surface and the second opposing surface are continuous. The detection device according to claim 1 .

3. the second insulating film further has a second contact hole overlapping another part of the semiconductor film in a plan view; the other of the source electrode and the drain electrode overlaps with the gate electrode in a plan view and is electrically connected to the semiconductor film inside the second contact hole; In the second contact hole, the other electrode and the semiconductor film face each other while being spaced apart from a second partial surface of a side surface of the second contact hole. The detection device according to claim 1 .

4. The semiconductor film is a first partial film electrically connected to the one electrode; a second partial film electrically isolated from the first partial film and overlapping the second insulating film in a plan view; The detection device according to claim 1 .

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