Film production device

Abstract

To provide a film production device capable of sufficiently mixing material gas in a gas emission part.SOLUTION: The device has a first gas supply system, a second gas supply system, a gas emission part, and a film production chamber. The first gas supply system can supply first material gas to the gas emission part, and the second gas supply system can supply second material gas to the gas emission part. The gas emission part is arranged in the film production chamber, and has one or more gas emission ports, and can emit film production gas to a base material from the gas emission ports. The gas emission part has an internal space, a first gas dispersion part for dispersing the first material gas supplied from the first gas supply system to the internal space, and a second gas dispersion part for dispersing the second material gas supplied from the second gas supply system to the internal space. The first gas dispersion part is positioned on a downstream side in a flow direction of the second material gas from the second gas dispersion part to the gas emission port, and is provided to block one part of the second material gas.SELECTED DRAWING: Figure 11

Description

[Technical Field]

[0001] The present invention relates to a film forming apparatus for forming a thin film on a substrate. [Background technology]

[0002] Conventionally, a vacuum deposition apparatus has been used to form each layer of an organic EL device (for example, Patent Document 1). The vapor deposition apparatus of Patent Document 1 is a so-called gas carrier type vapor deposition apparatus, in which solid (mainly powder) thin film forming materials are introduced into a vaporization chamber using a high-temperature carrier gas, and the thin film forming materials are heated and vaporized in the vaporization chamber to generate thin film material gas.The thin film material gas is then pressurized by the carrier gas to a film deposition chamber, and a mixed gas of the carrier gas and thin film material gas is sprayed onto a substrate from a gas release section in the film deposition chamber. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-135270 Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, the organic light-emitting layer of an organic EL device is formed by adding a dopant material (light-emitting material) to a host material. When an organic light-emitting layer is co-deposited in the vapor deposition apparatus of Patent Document 1, thin film material gases are introduced into a gas discharge section in a film deposition chamber from a gas supply system that supplies a host material and a gas supply system that supplies a dopant material, respectively, and the thin film material gases are mixed in the gas discharge section and sprayed onto the substrate as a film deposition gas. At this time, if the thin film material gas is not sufficiently dispersed within the gas release portion, there is a risk that a film thickness distribution will occur on the substrate, making it impossible to form a uniform thin film on the substrate.

[0005] Therefore, an object of the present invention is to provide a film forming apparatus that can sufficiently mix material gases within the gas discharge section. [Means for solving the problem]

[0006] One aspect of the present invention for solving the above-mentioned problems is a film formation apparatus for forming a thin film on a substrate, the film formation apparatus having a first gas supply system, a second gas supply system, a gas release section, and a film formation chamber, wherein the first gas supply system is capable of supplying a first material gas to the gas release section, and the second gas supply system is capable of supplying a second material gas to the gas release section, the gas release section being disposed within the film formation chamber, the gas release section having one or more gas release ports and capable of releasing a film formation gas onto the substrate from the gas release ports, the gas release port having an internal space, a first gas dispersion section that distributes the first material gas supplied from the first gas supply system into the internal space, and a second gas dispersion section that distributes the second material gas supplied from the second gas supply system into the internal space, the first gas dispersion section being located downstream in a flow direction of the second material gas from the second gas dispersion section to the gas release ports and being disposed so as to block a portion of the second material gas.

[0007] According to this aspect, the first gas dispersion unit blocks the second source gas supplied from the second gas dispersion unit, causing the second source gas to diffuse and bypass the first gas dispersion unit and flow toward the gas release port, thereby allowing the second source gas to be sufficiently dispersed in the internal space of the gas release unit and to be sufficiently mixed with the first source gas.

[0008] A preferred aspect is a gas release member having the gas release port, the first gas dispersion section being arranged between the second gas dispersion section and the gas release member, and the first gas dispersion section having an area larger than that of the second gas dispersion section when viewed in a plane and overlapping the entire second gas dispersion section.

[0009] In a preferred aspect, the area of ​​the first gas dispersion section is 1.5 times or more the area of ​​the second gas dispersion section when viewed from above.

[0010] In a preferred aspect, the first gas dispersion unit has a cylindrical or rotationally symmetric first housing unit and a first gas inlet unit that introduces a first material gas from the inside of the first housing unit into the internal space, and the second gas dispersion unit has a cylindrical or rotationally symmetric second housing unit and a second gas inlet unit that introduces a second material gas from the inside of the second housing unit into the internal space, and the central axis of the first housing unit is coaxial with the central axis of the second housing unit.

[0011] The term "rotationally symmetric body" used here refers to an object that overlaps when rotated (360 / n) degrees around the central axis.

[0012] In a preferred aspect, the first gas inlet portion is cylindrical or rotationally symmetrical and protrudes from the first housing portion, and the second gas inlet portion introduces the second material gas so that the introduced second material gas flows along the outer peripheral surface of the first gas inlet portion.

[0013] In a preferred aspect, the first material gas has a higher vaporization temperature than the second material gas.

[0014] The term "vaporization" as used herein includes not only the change from a liquid to a gas, but also sublimation, which is the direct change from a solid to a gas. [Effects of the Invention]

[0015] According to the film forming apparatus of the present invention, the material gases can be mixed sufficiently in the gas discharge section. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a configuration diagram that schematically illustrates a vapor deposition device according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a perspective view schematically illustrating a gas release portion of FIG. [Figure 3] FIG. 3 is an exploded perspective view of the gas release portion of FIG. 2. [Figure 4] FIG. 4 is a perspective view of the housing unit of FIG. 3. [Figure 5]5A and 5B are explanatory views of the piping unit of FIG. 4, in which (a) is a perspective view of the piping unit and (b) is a plan view of the piping unit. [Figure 6] FIG. 4 is an exploded perspective view of the piping unit of FIG. 3. [Figure 7] FIG. 4 is an exploded perspective view of the dispersion unit of FIG. 3. [Figure 8] 3A and 3B are cross-sectional views of the gas release portion of FIG. 2, where (a) is a cross-sectional view taken along line AA in FIG. 2, and (b) is a cross-sectional view taken along line BB in FIG. [Figure 9] 3 is a CC cross-sectional view of the gas release portion of FIG. 2. [Figure 10] 3 is a plan view of a main part of the gas release part of FIG. 2. FIG. [Figure 11] 2A and 2B are explanatory diagrams for forming a thin film by co-evaporation using the evaporation system of FIG. 1, where FIG. 2A is a cross-sectional view showing the gas flow in the second introduction system, and FIG. 2B is a cross-sectional perspective view showing the gas flow in the second introduction system, in which the flow of the second material gas is indicated by solid arrows and the flow of the third material gas is indicated by dashed arrows. [Figure 12] FIG. 2 is an explanatory view of forming a thin film by co-evaporation using the vapor deposition apparatus of FIG. 1, and is a partially cutaway perspective view showing the flow of gas in the internal space of a gas release portion. [Figure 13] FIG. 6 is an exploded perspective view of a gas discharge section of a vapor deposition apparatus according to a second embodiment of the present invention. [Figure 14] FIG. 14 is an exploded perspective view of the piping unit of FIG. 13. [Figure 15] FIG. 14 is a cross-sectional view of the gas release portion of FIG. [Figure 16] 14A and 14B are explanatory diagrams for forming a thin film by co-evaporation using the evaporation system of FIG. 13, where (a) is a cross-sectional view showing the gas flow in the second introduction system, and (b) is a cross-sectional perspective view showing the gas flow in the second introduction system, in which the flow of the second material gas is indicated by solid arrows and the flow of the third material gas is indicated by dashed arrows. [Figure 17] FIG. 14 is an explanatory diagram of forming a thin film by co-evaporation using the evaporation system of FIG. 13, and is a plan view showing the flow of gas in a gas release section. DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, embodiments of the present invention will be described in detail.

[0018] The vapor deposition apparatus 1 of the first embodiment of the present invention is a film forming apparatus that forms a thin film 7 (7a, 7b) on a substrate 6 (6a, 6b), and is a vacuum vapor deposition apparatus equipped with a film forming section 2 and multiple gas supply systems 3a to 3c, as shown in Figure 1. Specifically, the deposition apparatus 1 is a gas carrier deposition apparatus that supplies material gases from each gas supply system 3a to 3c to the film formation section 2, generates a film formation gas by mixing the material gases supplied from each gas supply system 3a to 3c in the film formation section 2, and sprays the film formation gas onto the substrate 6 in the film formation section 2 to form a thin film 7 that constitutes the organic EL device on the substrate 6. The deposition apparatus 1 is a deposition apparatus of a deposit-up type in which a film is formed by discharging a film-forming gas from the lower side to the upper side in the vertical direction in the film-forming section 2.

[0019] (Film forming department 2) As shown in Figure 1, the film forming unit 2 has, as its main components, a film forming chamber 10, a substrate holding unit 11, and a gas release unit 12, and sprays a film forming gas from the gas release unit 12 onto a substrate 6 placed in the film forming chamber 10 to form a thin film 7 on the substrate 6. The film forming section 2 of this embodiment is capable of simultaneously releasing film forming gas onto a plurality of substrates 6a, 6b to form thin films 7a, 7b on each of the substrates.

[0020] (Base material holding part 11) The substrate holding section 11 is a section that holds the substrates 6a and 6b so that the surfaces on which the films are to be formed face the discharge-side lid sections 23a and 23b of the gas discharge section 12, as shown in FIG.

[0021] (gas discharge section 12) The gas discharge section 12 is a section that discharges a film forming gas onto the substrates 6a and 6b, and specifically is a deposition head. As shown in Figures 2 and 3, the gas release section 12 includes a housing section 20, a piping unit 21, distribution units 22a, 22b (22), release side lid sections 23a, 23b (23) (gas release members), and a central side lid section 24.

[0022] (Housing part 20) The housing 20 is a rectangular box-shaped body with an open upper portion, and as shown in Figure 4, has a bottom wall 30, side walls 31a to 31d, discharge side top wall portions 32a and 32b, and a central side top wall portion 33, and has an internal space 34 surrounded by each of the walls 30 to 33.

[0023] The bottom wall portion 30 is a rectangular plate-like wall portion, and as shown in FIGS. 4 and 8(a), has insertion holes 40a to 40c in the center portion in the longitudinal direction. As shown in FIG. 4, the side walls 31a to 31d are provided upright from the respective sides of the bottom wall 30 and are connecting walls that connect the bottom wall 30 with the top walls 32a, 32b, and 33. The discharge side ceiling wall portions 32a, 32b are wall portions that face the bottom wall portion 30 with a gap in the vertical direction, and as shown in Figure 4, they have ceiling wall main body portions 41a, 41b, protruding wall portions 42a, 42b, and housing side through holes 43a, 43b.

[0024] As shown in FIG. 4, the top wall main body portions 41a and 41b are rectangular ring-shaped wall portions when viewed from above. As shown in FIG. 8(b), the protruding wall portions 42a and 42b are thinner than the top wall main body portions 41a and 41b, and are protruding portions that protrude inward from the top wall main body portions 41a and 41b. There is a step in the height direction between the top surface of the ceiling wall main body portions 41a, 41b and the top surface of the protruding wall portions 42a, 42b, and the top surfaces of the ceiling wall main body portions 41a, 41b and the top surfaces of the protruding wall portions 42a, 42b are connected in a stepped manner via the inner side surfaces of the ceiling wall main body portions 41a, 41b. The housing-side through-holes 43a and 43b are through-holes that penetrate the discharge-side top wall portions 32a and 32b in the thickness direction.

[0025] The central ceiling wall portion 33 is a wall portion located between the discharge-side ceiling wall portions 32a, 32b in the lateral direction X, and is provided with a central through-hole 44 that penetrates in the thickness direction as shown in FIG.

[0026] (Piping unit 21) The piping unit 21 includes a first introduction system section 50 and a second introduction system section 51, as shown in FIG. The first introduction system 50 is a piping system that introduces the first material gas into the internal space 34, and includes first gas dispersion sections 60a and 60b and a first introduction piping section 61.

[0027] (First gas dispersion section 60a, 60b) The first gas dispersion sections 60a, 60b are sections that introduce the first material gas into the dispersion space 150 (see Figure 9) of the internal space 34, and as shown in Figure 6, are equipped with a first dispersion housing section 70 (first housing section), a filter section 71 (first gas introduction section), and a spacer section 72. The first gas dispersion sections 60a and 60b of this embodiment each include a plurality of filter sections 71, specifically 16 filter sections 71.

[0028] As shown in Figure 6, the first distributed housing unit 70 is a cylindrical or rotationally symmetrical box-shaped body with an axial direction in the vertical direction, and the first distributed housing unit 70 in this embodiment is a cylindrical box-shaped body with an axial direction in the vertical direction. The first distribution housing 70 has a top sidewall 80, a bottom sidewall 81, and a sidewall 82, and has a gas space 83 inside as shown in FIG.

[0029] The top surface side wall portion 80 is a wall portion that forms the top surface of the first distributed housing portion 70, as shown in FIG. The bottom side wall portion 81 is a wall portion that forms the bottom surface of the first distributed housing portion 70. The side wall portion 82 is a connecting wall portion that connects the edge of the top wall portion 80 and the edge of the bottom wall portion 81, and is a peripheral wall portion that forms the outer periphery of the first distributed housing portion 70. The gas space 83 is an enclosed space surrounded by the wall portions 80 to 82, and is a communicating space that communicates with the interior of the first introduction pipe portion 61.

[0030] (Filter part 71) As shown in Figure 6, the filter section 71 is provided on the side wall section 82, which is the outer peripheral surface (side surface) of the first distribution housing section 70, and is a cylindrical section that protrudes radially relative to the first distribution housing section 70 and has a closed end face in the protruding direction. As shown in FIG. 5(b), the filter sections 71 of this embodiment are provided at equal intervals in the circumferential direction based on the central axis of the first distribution casing section 70, and the intervals between adjacent filter sections 71, 71 are equal. The filter section 71 is a gas introduction section that can introduce the first material gas in the gas space 83 of the first dispersion housing section 70 into the dispersion space 150 . The filter section 71 is a porous filter made of a porous body, and includes a filter-side outer shell section 85 and a plurality of filter-side introduction holes 86, as shown in the enlarged view of FIG.

[0031] The filter side outer casing 85 is the part that forms the outer casing of the filter section 71, and is a cylindrical casing with a central axis perpendicular to the central axis of the first distribution casing section 70 and a closed axial end face.

[0032] The filter side introduction hole 86 is a through hole provided on the axial end face and outer peripheral face of the filter side outer shell part 85, which passes through the filter side outer shell part 85 and connects the gas space 83 and the dispersion space 150. The filter-side introduction hole 86 preferably has a smallest inner diameter that is smaller than the arithmetic mean diameter of the thin film forming material of the first source gas. The gas inlets, which are openings on the dispersion space 150 side of the filter side introduction holes 86, are randomly oriented radially outward from the filter side outer shell 85, and are capable of discharging gas into the dispersion space 150.

[0033] As shown in FIG. 8(b), the spacer portion 72 is a distance maintaining portion that maintains the distance between the top surface sidewall portion 80 and the distribution unit 22 at a predetermined distance.

[0034] (First introduction piping section 61) The first introduction piping section 61 is a section that constitutes a flow path connecting the gas supply flow path 5a to each gas space 83, 83 of the first gas dispersion sections 60a, 60b, and as shown in Figure 6, it is equipped with a first connection section 90 and first piping sections 91a, 91b. The first connection part 90 is a part that is connected to the gas supply flow path 5a of the first gas supply system 3a. The first piping sections 91a and 91b are connecting piping sections that connect the first gas dispersion sections 60a and 60b and the first connection section 90.

[0035] (Second introduction system section 51) The second introduction system 51 is a piping system that introduces the second material gas and the third material gas into the internal space 34, and includes second gas dispersion sections 100a and 100b and second introduction piping sections 101a and 101b as shown in FIG.

[0036] The second gas dispersion units 100a and 100b are portions that introduce the second source gas and the third source gas into the dispersion space 150 of the internal space . As shown in Figure 8(b), the second gas dispersion section 100a, 100b comprises a second dispersion housing section 110 (second housing section), an internal partition section 111, a first dispersion introduction hole 112 (second gas introduction section), a second dispersion introduction hole 113, and spacer sections 114, 115, and the interior of the second dispersion housing section 110 is divided into multiple gas spaces 116, 117 by the internal partition section 111. The second gas dispersion section 100a, 100b of this embodiment has a plurality of first dispersion introduction holes 112 and a plurality of second dispersion introduction holes 113, specifically, 48 first dispersion introduction holes 112 and 48 second dispersion introduction holes 113.

[0037] As shown in FIG. 6, the second distributed housing unit 110 is a cylindrical housing having an axial direction in the up-down direction, and includes a top sidewall unit 120, a bottom sidewall unit 121, and a side sidewall unit 122. The top surface side wall 120 is a wall that forms the top surface of the second distributed housing unit 110. The bottom side wall 121 is a wall that forms the bottom surface of the second distributed housing unit 110. The side wall portion 122 is a connecting wall portion that connects the edge of the top wall portion 120 and the edge of the bottom wall portion 121, and is a peripheral wall portion that forms the outer periphery of the second distributed housing portion 110.

[0038] The diameter of the second distributed housing unit 110 when viewed in a plane is smaller than the diameter of the first distributed housing unit 70, and is preferably 0.2 times or more, and more preferably 0.3 times or more, the diameter of the first distributed housing unit 70. The diameter of the second distributed casing unit 110 in plan view is preferably less than 0.8 times the diameter of the first distributed casing unit 70, and is preferably 0.7 times or less.

[0039] As shown in FIG. 8(b), the internal partition 111 is a plate-like portion that vertically divides the interior of the second distribution casing 110 into an upper gas space 116 and a lower gas space 117.

[0040] As shown in Figure 8(b), the first dispersion introduction hole 112 is provided in the side wall portion 122 of the second dispersion housing portion 110, and is a through hole that penetrates the second dispersion housing portion 110 radially, and is a communicating hole that connects the upper stage gas space 116 and the dispersion space 150. That is, the first dispersion introduction hole 112 is a gas introduction part that can introduce the second material gas in the upper gas space 116 into the dispersion space 150.

[0041] The gas inlet, which is the opening of the first dispersion introduction hole 112 on the dispersion space 150 side, faces radially outward of the second dispersion casing part 110 and is capable of discharging laminar gas flow into the dispersion space 150.

[0042] The second dispersion introduction hole 113 is provided in the side wall portion 122 of the second dispersion housing portion 110, as shown in Figure 8(b), and is a through hole that penetrates the second dispersion housing portion 110 radially, and is a communicating hole that connects the lower-stage gas space 117 and the dispersion space 150. That is, the second dispersion introduction hole 113 is a gas introduction part that can introduce the third material gas in the lower gas space 117 into the dispersion space 150 .

[0043] The gas inlet, which is the opening of the second dispersion introduction hole 113 on the dispersion space 150 side, faces radially outward of the second dispersion casing 110 and is capable of discharging laminar gas flow into the dispersion space 150. The second dispersion introduction hole 113 is located below the first dispersion introduction hole 112, and is at a different height position in the second dispersion housing unit 110.

[0044] As shown in FIG. 9, the spacer 114 is a distance maintaining section that maintains the distance between the top surface sidewall 120 and the bottom surface sidewall 81 of the first distributed housing section 70 at a predetermined distance. The spacer portion 115 is a gap maintaining portion that maintains the gap between the bottom sidewall portion 121 and the bottom wall portion 30 of the housing portion 20 at a predetermined gap.

[0045] As shown in FIG. 8(b), the upper gas space 116 is a communicating space that communicates with the interior of the second introduction pipe portion 101a. The lower gas space 117 is a communicating space that communicates with the interior of the second inlet pipe portion 101b, and is an isolated space that is isolated from the upper gas space 116 by the internal partition portion 111.

[0046] (Second introduction piping section 101a, 101b) The second introduction piping section 101a is a section that constitutes a flow path connecting the gas supply flow path 5b to the upper gas spaces 116, 116 of the second gas dispersion sections 100a, 100b, and is equipped with a second connection section 130 and second piping sections 131a, 131b as shown in Figure 6. The second connection part 130 is a part that is connected to the gas supply passage 5b of the second gas supply system 3b. The second piping sections 131a and 131b are connecting piping sections that connect the second gas dispersion sections 100a and 100b to the second connection section .

[0047] The second inlet piping section 101b is a section that constitutes a flow path connecting the gas supply flow path 5c to the lower gas spaces 117, 117 of the second gas dispersion sections 100a, 100b, and is equipped with a third connection section 132 and third piping sections 133a, 133b as shown in Figure 6. The third connection part 132 is a part that is connected to the gas supply passage 5c of the third gas supply system 3c. The third piping sections 133a and 133b are connecting piping sections that connect the second gas dispersion sections 100a and 100b to the third connecting section 132.

[0048] (Distribution units 22a, 22b) The dispersion units 22a and 22b are members that uniformly distribute the deposition gas in the horizontal direction X and the vertical direction Y, and are provided with a partition plate portion 140, a spacer member 141, and a dispersion plate portion 142 as shown in FIG.

[0049] As shown in Figures 7 and 8, the partition plate portion 140 is a plate-like body that divides the internal space 34 in the vertical direction into a dispersion space 150 and a discharge space 151, and is provided with a convergence side through hole 152 that penetrates in the thickness direction.

[0050] The dispersion space 150 is a space in which the material gases are diffused from the introduction holes 86, 112, and 113, and also serves as a mixing space in which the material gases released from the introduction holes 86, 112, and 113 are mixed together. The convergence side through hole 152 is provided in the center of the partition plate portion 140 as shown in Figure 8, and is a communicating hole that connects the dispersion space 150 and the discharge space 151, and is a narrowed portion that narrows the flow path area from the dispersion space 150 side to the discharge space 151 side. The convergence-side through-hole 152 has a circular opening and a central axis extending in the vertical direction.

[0051] As shown in FIG. 7, the spacer member 141 is provided between the partition plate portion 140 and the dispersion plate portion 142, and is a distance maintaining member that maintains the distance between the partition plate portion 140 and the dispersion plate portion 142.

[0052] As shown in Figures 8 and 9, the dispersion plate portion 142 is a plate-shaped body that divides the discharge space 151 into a first discharge space 155 and a second discharge space 156 in the vertical direction, and is a dispersion member that disperses gas on the first discharge space 155 side to the second discharge space 156 side. The dispersion plate 142 has a plurality of through-hole groups 157 as shown in FIG.

[0053] As shown in FIG. 7, the through-hole group 157 is a collection of through-holes in which a plurality of dispersion through-holes 158 are arranged at intervals in the circumferential direction around the center when viewed from above. The through-hole groups 157 are arranged concentrically in a plan view, and are spaced apart in the radial direction. The dispersion through-holes 158 are through-holes that penetrate the dispersion plate 142 in the thickness direction, and are gas outlets that discharge the film forming gas toward the substrate 6 . In plan view, the opening area of ​​the dispersion through holes 158 in each through hole group 157 increases from the center toward the outside. That is, the opening areas of the dispersion through holes 158 belonging to different through hole groups 157 differ, with the opening area of ​​the inner through hole groups 157 being smaller than that of the outer through hole groups 157.

[0054] (Discharge side lid part 23a, 23b) The discharge-side lid portions 23a and 23b are closing members that close the housing-side through-holes 43a and 43b of the housing portion 20 and partition the second discharge space 156, as shown in FIGS. As shown in FIG. 3, the discharge side lid portions 23a and 23b are gas discharge members having a plurality of discharge through holes 160 (gas discharge ports). The discharge through-hole 160 is a through-hole that penetrates the discharge-side lid portions 23a, 23b in the thickness direction, and is a gas discharge port that discharges the film forming gas to the substrate 6. That is, the discharge-side lid portions 23a, 23b have opposing surfaces 161a, 161b that face the substrate 6 with a gap therebetween, and the gas discharge ports of the discharge through-hole 160 are provided on the opposing surfaces 161a, 161b. The discharge through holes 160 are arranged at equal intervals in the horizontal direction X and the vertical direction Y. In this embodiment, the discharge through holes 160 are arranged at the vertices of a square or an equilateral triangle when viewed in a plane, and are arranged so that the figure formed by connecting adjacent discharge through holes 160 fills the plane.

[0055] The central lid portion 24 is a closing member that closes the central through-hole 44 of the housing portion 20 .

[0056] Here, the positional relationship of each part of the gas release section 12 of this embodiment will be described.

[0057] As shown in FIGS. 3 and 4, the gas release section 12 is disposed in the internal space 34 of the housing 20 with the piping unit 21 placed on the bottom wall 30 of the housing 20. As shown in Figure 10, in the central part of the horizontal direction X of the housing part 20, the piping unit 21 has the first connection part 90 of the first introduction piping part 61 and the connection parts 130 and 132 of the second introduction piping parts 101a and 101b lined up in a straight line with a gap in the vertical direction Y, and as shown in Figure 8(a), the heights of each connection part 90, 130, 132 are different. As shown in Figure 9, the piping unit 21 has the downstream end of the first inlet piping section 61 in the flow direction of the first material gas connected to each of the first gas dispersion sections 60a, 60b, and the downstream end of the second inlet piping sections 101a, 101b in the flow direction of the first material gas connected to each of the second gas dispersion sections 100a, 100b. Specifically, the first introduction piping section 61 passes through the side wall section 82 of the first distribution housing section 70 and extends inside and outside the first distribution housing section 70, and has an elbow structure in which the opening at the downstream end faces downward at the center position of the top side wall section 80. The downstream end of the second introduction pipe section 101a is connected to the center position of the top side wall section 120 of the second distribution housing section 110, and the opening of the downstream end faces downward (towards the internal partition section 111). The downstream end of the second introduction pipe section 101b is connected to the center position of the bottom side wall section 121 of the second distribution housing section 110, and the opening of the downstream end faces upward (towards the internal partition section 111).

[0058] 9 and 10, the inlet pipe sections 61, 101a, and 101b are preferably aligned in a line in the height direction (vertical direction) in the region where they overlap with the partition plate section 140. That is, the inlet pipe sections 61, 101a, and 101b are preferably aligned in a line in the vertical direction in the region where they overlap with the partition plate section 140 in the plan view. The first introduction piping section 61 is located above the second introduction piping sections 101a, 101b, and when viewed in a plan view, overlaps with the entire second introduction piping sections 101a, 101b at the portions that overlap with the housing side through holes 43a, 43b. 8(b) and 9, the central axis of the first distributed casing unit 70 is aligned on the same straight line as the central axis of the second distributed casing unit 110, and the first distributed casing unit 70 covers the second distributed casing unit 110 like an umbrella. In other words, the second distributed casing unit 110 is located inside the outline of the first distributed casing unit 70 when viewed from above.

[0059] The distribution units 22a and 22b are placed on the top surfaces of the protruding wall portions 42a and 42b so as to close the housing-side through-holes 43a and 43b of the housing portion 20, as shown in FIGS. The discharge side lid portions 23a and 23b are placed on the top surfaces of the top wall main body portions 41a and 41b. In the distribution units 22a and 22b, a spacer member 141 is positioned between a partition plate portion 140 and a distribution plate portion 142, as shown in FIGS. As shown in Figures 8 and 9, the gas release section 12 has a dispersion space 150 formed between the bottom wall section 30 and the partition plate section 140, a first release space 155 formed between the partition plate section 140 and the dispersion plate section 142, and a second release space 156 formed between the dispersion plate section 142 and the release side lid sections 23a, 23b.

[0060] When viewed in a plane as shown in Figures 8 and 9, the central axis of the convergence side through hole 152 of the partition plate portion 140 of the distribution units 22a and 22b is on the central axis of the first distribution housing portion 70 of the first gas distribution section 60a and 60b, and also on the central axis of the second distribution housing portion 110 of the second gas distribution section 100a and 100b. In the distribution units 22a and 22b, the convergence-side through-holes 152 of the partition plate 140 face the top surface side wall 80 of the first distribution casing 70 of the first gas distribution sections 60a and 60b with a gap therebetween.

[0061] In addition, the convergence side through holes 152 of the partition plate section 140 are each equidistant from the filter sections 71 of the first gas dispersion sections 60a, 60b, are each equidistant from the dispersion introduction holes 112 of the second gas dispersion section 100a, and are each equidistant from the dispersion introduction holes 113 of the second gas dispersion section 100b.

[0062] It is preferable that the diameter of the smallest encompassing circle of the first dispersion casing 70 of the first gas dispersion sections 60a, 60b is four times or more the inner diameter of the convergence-side through-hole 152 when viewed in plan. The second distribution casing 110 of the second gas distribution section 100a, 100b preferably has a minimum inclusive circle whose diameter is 1.5 times or more the inner diameter of the convergence-side through-hole 152 when viewed from above. In the dispersion units 22a and 22b, when viewed from above, the convergence-side through-hole 152 of the partition plate 140 is positioned at the center of each through-hole group 157 of the dispersion plate 142 and does not overlap any of the dispersion through-holes 158.

[0063] As shown in FIG. 8(a), the central lid portion 24 is placed on the central ceiling wall portion 33 so as to close the central through-hole 44.

[0064] (Gas supply systems 3a to 3c) The gas supply systems 3a to 3c supply material gases to the film forming section 2, and as shown in FIG. 1, include gas generating sections 4a to 4c and gas supply flow paths 5a to 5c.

[0065] (Gas generating units 4a to 4c) The gas generating units 4a to 4c vaporize or sublimate thin film forming materials to generate material gases including thin film forming gases, which are gases of thin film forming materials, and supply the material gases to the film forming unit 2 via the gas supply flow paths 5a to 5c. The gas generating section 4a is a section where a host material for the light-emitting layer of the organic EL device is mainly used as a thin film forming material, and the host material is vaporized or sublimated to generate a material gas. The gas generating section 4b is a section where a first dopant material for the light-emitting layer of the organic EL device is mainly used as a thin film forming material, and where the first dopant material is vaporized or sublimated to generate a material gas. The gas generating section 4c is a section where a second dopant material for the light-emitting layer of the organic EL device is mainly used as a thin film forming material, and where the second dopant material is vaporized or sublimated to generate a material gas. The thin film forming material used in gas generator 4a of this embodiment has a higher boiling point or sublimation point than the thin film forming materials used in other gas generators 4b and 4c, and is therefore less likely to vaporize or sublimate. In other words, the thin film forming material used in gas generator 4a is more likely to leave residue when heated than the thin film forming materials used in other gas generators 4b and 4c.

[0066] (Gas supply flow paths 5a to 5c) The gas supply flow paths 5a to 5c connect the film deposition unit 2 with the gas generation units 4a to 4c, and are flow paths for sending the material gases supplied from the gas generation units 4a to 4c to the film deposition unit 2.

[0067] Next, a description will be given of the gas flow when thin films 7a and 7b are formed on two substrates 6a and 6b, respectively, using the vapor deposition apparatus 1 of this embodiment. The following description will focus on the case where thin films 7a and 7b are formed on the two substrates 6a and 6b by co-evaporation using material gases supplied from three gas supply systems 3a to 3c.

[0068] The gas generators 4a to 4c of the gas supply systems 3a to 3c generate material gases, which are then supplied to the gas discharge section 12 inside the deposition chamber 10 via the gas supply channels 5a to 5c.

[0069] The material gas (hereinafter also referred to as first material gas A) supplied from the first gas generation unit 4a of the first gas supply system 3a passes through the gas supply flow path 5a, is introduced into the first connection unit 90 in the gas release unit 12, and reaches the gas spaces 83, 83 of the first gas dispersion units 60a, 60b via the first piping units 91a, 91b. Then, the first material gas A is dispersed into the dispersion space 150 from the gas inlet of the filter-side introduction hole 86 of the filter unit 71 of the first dispersion housing unit 70, as shown in FIG. 11(a).

[0070] The material gas (hereinafter also referred to as second material gas B) supplied from the second gas generator 4b of the second gas supply system 3b passes through the gas supply passage 5b, is introduced into the second connection section 130 in the gas release section 12, and reaches the upper gas spaces 116, 116 of the second gas dispersion sections 100a, 100b via the second piping sections 131a, 131b. Then, the second material gas B is dispersed into the dispersion space 150 from the gas inlet of the first dispersion introduction hole 112 of the second dispersion housing section 110, as shown in FIG.

[0071] The material gas (hereinafter also referred to as third material gas C) supplied from the third gas generator 4c of the third gas supply system 3c passes through the gas supply flow path 5c, is introduced into the third connection part 132 in the gas release part 12, and reaches the lower gas spaces 117, 117 of the second gas dispersion parts 100a, 100b via the third piping parts 133a, 133b. Then, the third material gas C is dispersed into the dispersion space 150 from the gas inlet of the second dispersion introduction hole 113 of the second dispersion housing part 110, as shown in FIG.

[0072] At this time, in the first gas dispersion sections 60a, 60b, the first material gas A is sprayed radially from the filter side inlet holes 86 of each filter section 71 along the shape of the filter side outer casing section 85, and in the second gas dispersion sections 100a, 100b, the second material gas B is released in layers from the first dispersion inlet holes 112 of the second dispersion housing section 110, and the third material gas C is released in layers from the second dispersion inlet holes 113. That is, the first material gas A is randomly released from the filter-side inlet holes 86 of the filter section 71, whereas the second material gas B and the third material gas C are directionally released from the respective dispersion inlet holes 112, 113.

[0073] The first material gas A introduced into the dispersion space 150 through the filter-side inlet holes 86 of the first gas dispersion sections 60a and 60b, the second material gas B introduced into the dispersion space 150 through the first dispersion inlet holes 112 of the second gas dispersion sections 100a and 100b, and the third material gas C introduced into the dispersion space 150 through the second dispersion inlet holes 113 of the second gas dispersion sections 100a and 100b are dispersed and mixed in the dispersion space 150 to form a film deposition gas, which is a mixture of multiple material gases. The film deposition gas passes through the convergence-side through-holes 152 of the partition plate 140 and reaches the first release space 155. That is, the film deposition gas mixed in the dispersion space 150 is collected by the convergence-side through-holes 152 of the partition plate 140 and introduced into the first release space 155, as shown in FIG. 12 .

[0074] 11 , the second material gas B introduced into the dispersion space 150 from the first dispersion inlet holes 112 of the second gas dispersion sections 100a and 100b mixes with the third material gas C in the dispersion space 150 and moves together with the third material gas C toward the convergence-side through-holes 152, which are under negative pressure, but the first dispersion housing section 70 acts as a steric obstacle, blocking the second material gas B and moving along the bottom sidewall section 81. The second material gas B then passes between the filter sections 71, 71 together with the third material gas C along the sidewall section 82, avoiding the filter sections 71, 71. At this time, the first material gas A is being supplied from the filter sections 71, 71, and the second material gas B, together with the third material gas C, is exposed to the first material gas A and mixed with it as it passes through the filter sections 71, 71, becoming a film-forming gas and heading toward the convergence side through-hole 152.

[0075] The film-forming gas that reaches the first release space 155 collides with the center of the dispersion plate section 142, as shown in the enlarged view of Figure 12, and while being blocked, passes through each dispersion through-hole 158 of the dispersion plate section 142, is dispersed in a planar form, and is introduced into the second release space 156. The film-forming gas introduced into the second release space 156 from each dispersion through-hole 158 is released onto each substrate 6a, 6b from each release through-hole 160 in the release side lid portions 23a, 23b, and thin films 7a, 7b are formed on each substrate 6a, 6b.

[0076] According to the deposition apparatus 1 of this embodiment, the first gas dispersion sections 60a, 60b are located downstream in the flow direction of the second and third source gases from the second gas dispersion sections 100a, 100b to the discharge through holes 160 and are provided so as to block a portion of the second source gas. Therefore, the first gas dispersion sections 60a, 60b block the second and third source gases supplied from the second gas dispersion sections 100a, 100b, so that the second and third source gases diffuse and bypass the first gas dispersion sections 60a, 60b and flow toward the discharge through holes 160. Therefore, the second and third source gases can be sufficiently dispersed in the internal space 34 of the gas discharge section 12 and can be sufficiently mixed with the first source gas.

[0077] In the deposition apparatus 1 of this embodiment, the first gas dispersion sections 60a, 60b have a larger area than the second gas dispersion sections 100a, 100b in plan view and overlap the entire second gas dispersion sections 100a, 100b, so that the first gas dispersion sections 60a, 60b tend to obstruct the second and third source gases supplied from the second gas dispersion sections 100a, 100b, and tend to block the second and third source gases.

[0078] According to the deposition apparatus 1 of this embodiment, the area of ​​the first gas dispersion sections 60a, 60b is preferably 1.5 times or more the area of ​​the second gas dispersion sections 100a, 100b in plan view, which makes it easier for the first gas dispersion sections 60a, 60b to block the second source gas and the third source gas.

[0079] According to the vapor deposition apparatus 1 of this embodiment, the central axis of the first distribution casing 70 is coaxial with the central axis of the second distribution casing 110. Therefore, the distances between each dispersion introduction hole 112 (113) of the second distribution casing 110 and the side wall portion 82 of the first distribution casing 70 are all equal, and therefore the second material gas (third material gas) released from each dispersion introduction hole 112 (113) is likely to be dispersed approximately evenly.

[0080] According to the deposition apparatus 1 of this embodiment, the filter section 71 is cylindrical or rotationally symmetrical and protrudes from the first dispersion housing section 70, and the dispersion introduction holes 112 (113) introduce the second material gas (third material gas) so that the introduced second material gas follows the outer peripheral surface of the filter section 71. Therefore, the second material gas (third material gas) is easily dispersed by the filter section 71, and the first material gas and the second material gas (third material gas) are easily mixed together.

[0081] In the deposition apparatus 1 of this embodiment, the first source gas preferably has a higher vaporization temperature than the second and third source gases, so that the second and third source gases are heated or kept warm by receiving the heat of the first source gas, making the second and third source gases less likely to solidify.

[0082] Next, a vapor deposition apparatus 201 according to a second embodiment will be described. Note that the same components as those in the vapor deposition apparatus 1 according to the first embodiment will be denoted by the same reference numerals and will not be described again. The same applies hereinafter.

[0083] The vapor deposition device 201 of the second embodiment differs from the vapor deposition device 1 of the first embodiment in the structure of the gas release section 212 .

[0084] As shown in FIG. 13, the gas release section 212 includes a housing section 20, a piping unit 221, distribution units 22a and 22b (22), release-side lid sections 23a and 23b (23), and a center-side lid section 24. The piping unit 221 includes a first introduction system section 250 and a second introduction system section 51, as shown in FIG. The first introduction system 250 is a piping system that introduces the first material gas into the internal space 34, and includes first gas dispersion sections 260a and 260b and a first introduction piping section 61.

[0085] (First gas dispersion section 260a, 260b) As shown in Figure 14, the first gas dispersion section 260a, 260b comprises a first dispersion housing section 70, a filter section 71, and a spacer section 72, and the filter section 71 is erected downward from the underside of the bottom side wall section 81 of the first dispersion housing section 70. The filter section 71 is arranged in an annular shape with a gap therebetween around the central axis of the first distribution housing section 70 .

[0086] Here, the positional relationship of each part of the gas release section 212 of this embodiment will be described.

[0087] As shown in FIG. 13, the gas release section 212 is arranged in the internal space 34 of the housing 20, with the piping unit 221 placed on the bottom wall 30 of the housing 20, similar to the gas release section 12 of the first embodiment.

[0088] As shown in Figure 15, the central axis of the first distributed housing section 70 of the first introduction system section 250 is aligned in the same straight line as the central axis of the second distributed housing section 110 of the second introduction system section 251, and covers the second distributed housing section 110. In the first introduction system section 250, the central axis of the first distribution housing section 70 is aligned in the same straight line as the central axis of the convergence side through hole 152 of the partition plate section 140, and the first distribution housing section 70 faces the convergence side through hole 152. When viewed in a plan view as shown in Figure 17, the first introduction system section 250 has filter sections 71 arranged to surround the second gas dispersion sections 100a, 100b of the second introduction system section 251, and within the filter sections 71 there are filter sections 71 that face the dispersion introduction holes 112, 113 of the second gas dispersion sections 100a, 100b. In this embodiment, the number of dispersion introduction holes 112, 113 in the second gas dispersion sections 100a, 100b is greater than the number of filter sections 71, and when each gas inlet is viewed from the front, the dispersion introduction holes 112, 113 in the second gas dispersion sections 100a, 100b include dispersion introduction holes 112, 113 that face the filter sections 71 and dispersion introduction holes 112, 113 that are located between the filter sections 71 and do not face the filter sections 71 and 71.

[0089] Next, a gas flow when thin films 7a and 7b are formed on two substrates 6a and 6b, respectively, using the vapor deposition apparatus 201 of this embodiment will be described.

[0090] The gas generators 4a to 4c of the gas supply systems 3a to 3c generate material gases, which are then supplied to the gas discharge section 212 inside the deposition chamber 10 from the gas generators 4a to 4c via the gas supply channels 5a to 5c.

[0091] The first material gas A supplied from the first gas generation unit 4a of the first gas supply system 3a passes through the gas supply flow path 5a, is introduced into the first connection unit 90 in the gas release unit 212, and reaches the gas spaces 83, 83 of the first gas dispersion units 260a, 260b via the first piping units 91a, 91b. Then, the first material gas A is dispersed into the dispersion space 150 from the gas inlet of the filter-side introduction hole 86 of the filter unit 71 of the first dispersion housing unit 70, as shown in FIG.

[0092] The second material gas B supplied from the second gas generator 4b of the second gas supply system 3b passes through the gas supply passage 5b and is introduced into the second connection section 130 in the gas release section 12, and then reaches the upper gas spaces 116, 116 of the second gas dispersion sections 100a, 100b via the second piping sections 131a, 131b. Then, the second material gas B is dispersed into the dispersion space 150 from the gas inlet of the first dispersion introduction hole 112 of the second dispersion housing section 110, as shown in FIG.

[0093] The third material gas C supplied from the third gas generator 4c of the third gas supply system 3c passes through the gas supply flow path 5c and is introduced into the third connection part 132 in the gas release part 12, and then reaches the lower gas spaces 117, 117 of the second gas dispersion parts 100a, 100b via the third piping parts 133a, 133b. Then, the third material gas C is dispersed into the dispersion space 150 from the gas inlet of the second dispersion introduction hole 113 of the second dispersion housing part 110, as shown in FIG.

[0094] The first material gas A introduced into the dispersion space 150 from the filter side inlet 86 of the first gas dispersion section 260a, 260b, the second material gas B introduced into the dispersion space 150 from the first dispersion inlet 112 of the second gas dispersion section 100a, 100b, and the third material gas C introduced into the dispersion space 150 from the second dispersion inlet 113 of the second gas dispersion section 100a, 100b are dispersed and mixed within the dispersion space 150 to become a film-forming gas, which is a mixed gas of multiple types of material gases, and the film-forming gas passes through the convergence side through hole 152 of the partition plate section 140 to reach the first release space 155.

[0095] Specifically, the second source gas B introduced into the dispersion space 150 from the first dispersion introduction holes 112 of the second gas dispersion sections 100a and 100b has its direction of travel blocked by the filter section 71 and passes between the filter sections 71, 71 to avoid the filter section 71, as shown in Figures 16 and 17. Similarly, the third source gas C introduced into the dispersion space 150 from the second dispersion introduction holes 113 of the second gas dispersion sections 100a and 100b has its direction of travel blocked by the filter section 71 and passes between the filter sections 71, 71 to avoid the filter section 71, as shown in Figures 16 and 17. At this time, since the first material gas A is being supplied from the filter sections 71, 71 of the first gas dispersion sections 260a, 260b, the second material gas B is exposed to and mixed with the first material gas A as it passes through the filter sections 71, 71 together with the third material gas C, and reaches the space on the opposite side of the dispersion introduction holes 112, 113 of the filter sections 71, 71 within the dispersion space 150, i.e., the bypass space 270, which is the space outside the filter section 71, and then turns into a film-forming gas from the bypass space 270 and flows toward the convergence side through hole 152.

[0096] The film-forming gas that reaches the first release space 155 collides with the center of the distribution plate section 142, is blocked, passes through each distribution through-hole 158 of the distribution plate section 142, is dispersed in a planar form, and is introduced into the second release space 156. The film-forming gas introduced into the second release space 156 from each dispersion through-hole 158 is released onto each substrate 6a, 6b from each release through-hole 160 in the release side lid portions 23a, 23b, and thin films 7a, 7b are formed on each substrate 6a, 6b.

[0097] According to the deposition apparatus 201 of the second embodiment, the filter unit 71 is provided in the dispersion space 150 so as to face the second gas dispersion units 100a and 100b, and the bypass space 270 is located on the opposite side of the filter unit 71. Therefore, the second and third source gases are likely to gather in the bypass space 270 after being dispersed around the filter unit 71, which obstructs their travel direction, and the second and third source gases are likely to mix with the first source gas supplied from the filter unit 71.

[0098] According to the deposition apparatus 201 of the second embodiment, in the first gas dispersion units 260a, 260b, the filter unit 71 protrudes downward from the first dispersion housing unit 70, obstructing the direction of travel of the second source gas and the third source gas. Therefore, the first dispersion housing unit 70 obstructs the second source gas and the third source gas from traveling the shortest distance to the convergence-side through-hole 152, and the second source gas and the third source gas easily pass between the filter units 71, 71 and are easily mixed.

[0099] According to the deposition apparatus 201 of the second embodiment, the first gas dispersion sections 260a, 260b have areas larger than those of the second gas dispersion sections 100a, 100b in plan view and overlap the entire second gas dispersion sections 100a, 100b, and each filter section 71 protrudes from the first dispersion housing section 70 toward the second gas dispersion sections 100a, 100b and surrounds the second gas dispersion sections 100a, 100b in plan view. That is, since the second gas dispersion sections 100a, 100b are surrounded by the first gas dispersion sections 260a, 260b, the second source gas and the third source gas are kept warm or heated by the heat of the first gas dispersion sections 260a, 260b, and contamination and the like can be suppressed.

[0100] According to the vapor deposition apparatus 201 of the second embodiment, the central axis of the first distribution housing part 70 is coaxial with the central axis of the second distribution housing part 110, so that the second material gas (third material gas) supplied from any of the distribution introduction holes 112 (113) is easily obstructed and dispersed evenly by the first distribution housing part 70.

[0101] In the above-described embodiment, each of the first gas dispersion sections 60a, 60b, 260a, and 260b includes 16 filter sections 71. However, the present invention is not limited to this. Each of the first gas dispersion sections 60a, 60b, 260a, and 260b may include 1 to 15 filter sections 71, or 17 or more filter sections 71.

[0102] In the above-described embodiment, the second gas dispersion sections 100a, 100b each have 48 dispersion introduction holes 112, 113, but the present invention is not limited to this. The second gas dispersion sections 100a, 100b may each have 1 to 47 dispersion introduction holes 112, 113, or may each have 49 or more dispersion introduction holes 112, 113. The numbers of dispersion introduction holes 112, 113 may be the same or different. The number of the dispersion introduction holes 112 and 113 is preferably provided to correspond to the number of the filter parts 71, and is preferably a natural number multiple of the number of the filter parts 71.

[0103] In the above-described embodiment, the film formation gas is simultaneously sprayed from one gas release part 12, 212 onto two substrates 6 to form a thin film 7 on each substrate 6, but the present invention is not limited to this. The film formation gas may be sprayed from one gas release part 12, 212 onto one substrate 6 to form a thin film 7 on the substrate 6, or the film formation gas may be sprayed from one gas release part 12, 212 onto three or more substrates 6 to form a thin film 7 on each substrate 6.

[0104] In the above-described embodiment, one gas release section 12, 212 is provided in the film deposition chamber 10, but the present invention is not limited to this. A plurality of gas release sections 12, 212 may be provided in the film deposition chamber 10.

[0105] In the above-described embodiment, the discharge-side lid portions 23a, 23b are provided with a plurality of discharge through-holes 160, but the present invention is not limited to this. The discharge-side lid portions 23a, 23b may each be provided with only one discharge through-hole 160.

[0106] In the above-described embodiment, the dispersion plate portion 142 is interposed between the discharge-side lid portions 23a, 23b and the partition plate portions 140, 140, but the present invention is not limited to this. The dispersion plate portion 142 does not have to be interposed between the discharge-side lid portions 23a, 23b and the partition plate portions 140, 140.

[0107] In the above-described embodiment, the first distribution housing 70 of each of the first gas distribution units 60a, 60b is a cylindrical box-like body having a central axis (rotation axis direction) in the vertical direction, but the present invention is not limited to this. The first distribution housing 70 of each of the first gas distribution units 60a, 60b may be a rotationally symmetric box-like body having a central axis (rotation axis direction) in the vertical direction, for example, a regular polygonal prism such as a regular triangular prism, a regular square prism, a regular pentagonal prism, or a regular hexagonal prism. Similarly, the second distribution casing 110 of each of the second gas distribution units 100a and 100b is a cylindrical box-like body with a central axis (rotation axis direction) in the vertical direction, but the present invention is not limited to this. The second distribution casing 110 of each of the second gas distribution units 100a and 100b may be a rotationally symmetric box-like body with a central axis (rotation axis direction) in the vertical direction, for example, a regular polygonal prism such as a regular triangular prism, a regular square prism, a regular pentagonal prism, or a regular hexagonal prism.

[0108] In the above embodiment, each of the gas supply systems 3a to 3c supplies the material gas generated in the gas generators 4a to 4c using a carrier gas to the gas release unit 12, but the present invention is not limited to this. Each of the gas supply systems 3a to 3c may supply the material gas generated in the gas generators 4a to 4c to the gas release unit 12 by a pressure difference or the like without using a carrier gas.

[0109] In the above-described embodiment, the filter unit 71 is provided on the side surface of the first distribution housing unit 70, but the present invention is not limited to this. The filter unit 71 does not have to be provided on the side surface of the first distribution housing unit 70. In this case, instead of the filter unit 71, it is preferable to provide a communication hole that connects the gas space 83 and the distribution space 150 of the internal space 34.

[0110] In the above-described embodiments, each component can be freely substituted or added between the respective embodiments as long as it falls within the technical scope of the present invention. [Explanation of symbols]

[0111] 1,201 Vapor deposition equipment 3a First gas supply system 3b Second gas supply system 6,6a,6b Base material 7,7a,7b thin film 10 Film forming room 12,212 Gas release section 23a, 23b: release side cover (gas release member) 34 Interior Space 60a, 60b, 260a, 260b First gas dispersion section 70 First distributed housing unit (first housing unit) 71 Filter member (first gas inlet) 100a, 100b Second gas dispersion section 110 Second distributed housing unit (second housing unit) 112 First dispersion introduction hole (second gas introduction part) 150 Interior Space 160 Release through hole (gas release port)

Claims

1. A film forming apparatus for forming a thin film on a substrate, The deposition chamber includes a first gas supply system, a second gas supply system, a gas discharge unit, and a deposition chamber; the first gas supply system is capable of supplying a first material gas to the gas emission part, the second gas supply system is capable of supplying a second material gas to the gas emission part, the gas release section is disposed in the deposition chamber, the gas release section has one or more gas release ports and is capable of releasing a deposition gas from the gas release ports onto the substrate; the gas release unit has an internal space, a first gas dispersion unit that disperses a first material gas supplied from the first gas supply system into the internal space, and a second gas dispersion unit that disperses a second material gas supplied from the second gas supply system into the internal space, The film forming apparatus, wherein the first gas dispersion section is located downstream in a flow direction of the second material gas from the second gas dispersion section to the gas outlet, and is arranged so as to block a portion of the second material gas.

2. a gas release member having the gas release port, the first gas dispersion unit is disposed between the second gas dispersion unit and the gas release member, The film forming apparatus according to claim 1 , wherein the first gas dispersion section has an area larger than an area of ​​the second gas dispersion section in a plan view and overlaps the entire second gas dispersion section.

3. The film forming apparatus according to claim 2 , wherein the area of ​​the first gas dispersion section is at least 1.5 times the area of ​​the second gas dispersion section in a plan view.

4. the first gas dispersion unit includes a cylindrical or rotationally symmetric first housing unit and a first gas inlet unit that introduces a first source gas from inside the first housing unit into the internal space, the second gas dispersion unit includes a second housing unit having a cylindrical or rotationally symmetrical shape, and a second gas inlet unit that introduces a second source gas from inside the second housing unit into the internal space, 4. The film forming apparatus according to claim 1, wherein a central axis of the first housing portion is coaxial with a central axis of the second housing portion.

5. the first gas introduction portion has a cylindrical or rotationally symmetrical shape and protrudes from the first housing portion, The film forming apparatus according to claim 4 , wherein the second gas inlet portion introduces the second material gas so that the second material gas flows along an outer peripheral surface of the first gas inlet portion.

6. 4. The film forming apparatus according to claim 1, wherein the first material gas has a higher vaporization temperature than the second material gas.

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