Electrostatic chuck device
The electrostatic chuck device addresses charging issues by incorporating a static eliminator with a conductive member and film, ensuring stable wafer fixation and efficient transfer through charge suppression.
Patent Information
- Application Number
- JP2024051444
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-03-27
- Publication Date
- 2025-10-09
Smart Images
Figure 2025150530000001_ABST
Abstract
Description
[Technical Field]
[0001] The present invention relates to an electrostatic chuck device. [Background technology]
[0002] In the semiconductor manufacturing process, a plate-shaped sample (wafer) fixed to a sample stage is subjected to plasma processing to process the wafer surface, for example, to form a wiring structure. After processing, the wafer is inspected using an inspection device to check for surface scratches and the presence of dust on the surface, and whether the formed wiring structure meets the design requirements.
[0003] In such wafer inspections, electrostatic chuck devices that can easily fix and hold wafers are used. Electrostatic chuck devices have a base body, one main surface of which is a mounting surface on which a wafer is placed, and an electrostatic attraction electrode that generates an electrostatic force (Coulomb force) between the base body and the wafer placed on the mounting surface (see, for example, Patent Document 1). A ceramic plate, which is a dielectric material, is used for the base body. [Prior art documents] [Patent documents]
[0004] [Patent Document 1] International Publication No. 2019 / 245791 Summary of the Invention [Problem to be solved by the invention]
[0005] When a wafer is held on a conventional electrostatic chuck for a long period of time, the dielectric substrate can become charged. Possible causes of charging include the electron beam used for inspection, secondary electrons generated by the potential difference between the holding electrode and the wafer, and frictional charging caused by repeatedly placing and removing the wafer.
[0006] A charged substrate cancels out the Coulomb force generated by the electrostatic attraction electrode, reducing the wafer attraction force, which can result in insufficient wafer fixation in an electrostatic chuck device with a charged substrate.
[0007] Furthermore, when the application of the electrostatic attraction electrode is stopped and the wafer is to be transferred, the charged substrate continues to attract the wafer due to the charge remaining on the substrate, which may hinder the removal of the wafer from the mounting surface. If the wafer is to be removed after the use of the electrostatic chuck device by discharging the charge from the substrate, the time required for the inspection work will be extended due to the discharging operation, and the work efficiency will be reduced.
[0008] In this way, if the base becomes charged, proper operation is hindered both when the wafer is being attracted (during inspection) and when the wafer is not being attracted (after inspection), and therefore improvement was required.
[0009] The present invention has been made in view of the above circumstances, and has an object to provide an electrostatic chuck device in which charging of a base constituting a mounting surface is suppressed. [Means for solving the problem]
[0010] In order to solve the above problems, one aspect of the present invention includes the following aspects.
[0011] [1] An electrostatic chuck device comprising: a base that is circular in plan view and made of a dielectric material and supports a plate-shaped sample; and an electrostatic attraction electrode provided inside the base, wherein the base has a plurality of convex portions that protrude upward from an upper surface of the base and support the plate-shaped sample at their upper ends; and a static eliminator that protrudes from the upper surface of the base to the same height as the convex portions, the upper surface of the base being continuous from an inner periphery of the base in plan view to an outer edge of the base, the static eliminator having a conductive member embedded in the base and penetrating the base in a thickness direction, and a strip-shaped conductive film that covers an upper end of the conductive member, the area of the conductive film being 20% or less of the area of the base in plan view, and the area of the electrostatic attraction electrode being 80% or more of the area of the base in plan view, and the conductive film having an outer peripheral film that is provided along the outer edge of the base in plan view, the outer peripheral film being provided inside the outer edge.
[0012] [2] The electrostatic chuck device according to [1], wherein the conductive film has a plurality of first films that share a common center and are arranged in a circular or arc shape, and a second film that connects the plurality of first films, and the first film is at least a part of the outer peripheral film.
[0013] [3] The electrostatic chuck device according to [2], wherein the distance between adjacent first films in the radial direction is 40 mm or less.
[0014] [4] The electrostatic chuck device according to [2] or [3], wherein the conductive member is provided in a region surrounded by the innermost first film among the plurality of first films.
[0015] [5] The electrostatic chuck device according to any one of [2] to [4], wherein the conductive member is provided at a position where the first film and the second film intersect.
[0016] [6] The electrostatic chuck device according to any one of [1] to [5], wherein the conductive member protrudes from the upper surface of the base to the same height as the protrusion.
[0017] [7] The electrostatic chuck device according to [6], wherein the static eliminator has a static eliminator convex portion that protrudes from the upper surface of the base at the same height as the convex portion, the conductive member is provided inside the outer edge of the static eliminator convex portion in a plan view, the upper end of the static eliminator convex portion and the upper end of the conductive member are provided at the same height, and the conductive film covers the upper end of the static eliminator convex portion and the upper end of the conductive member.
[0018] [8] The electrostatic chuck device according to any one of [1] to [7], wherein the base includes a first substrate made of a dielectric material and a second substrate sandwiching the electrostatic attraction electrode together with the first substrate, the first substrate having the plurality of convex portions on an upper surface thereof, and the conductive member includes a first conductive member embedded in the first substrate and electrically connected to the conductive film, and a second conductive member embedded in the second substrate and electrically connected to the first conductive member.
[0019] [9] An electrostatic chuck device according to any one of [1] to [8], wherein the conductive member has a through hole penetrating in the thickness direction, and the charge removal unit has a pin that is inserted into the through hole and can protrude upward from an upper end of the charge removal unit.
[0020]
[10] The electrostatic chuck device according to [9], wherein the pin is electrically connected to the conductive member and is configured to be able to puncture the insulating layer on the back surface of the plate-shaped sample.
[0021]
[11] The electrostatic chuck device according to any one of [1] to
[10] , wherein the base is provided with a groove portion that is dug below the upper surface of the base and extends in the surface direction. [Effects of the Invention]
[0022] According to the present invention, it is possible to provide an electrostatic chuck device in which charging of the base constituting the mounting surface is suppressed. [Brief explanation of the drawings]
[0023] [Figure 1] FIG. 1 is a schematic perspective view showing an electrostatic chuck device 1 of the present embodiment. [Figure 2] FIG. 2 is a partially enlarged view of the electrostatic chuck device 1. As shown in FIG. [Figure 3] FIG. 3 is a cross-sectional view of the electrostatic chuck device 1. [Figure 4] FIG. 4 is a partial plan view of the electrostatic chuck device 1 showing the conductive film 32 in detail. [Figure 5] FIG. 5 is an enlarged view of the position of the symbol α in FIG. [Figure 6] FIG. 6 is an explanatory diagram showing an electrostatic chuck device according to a modified example. DETAILED DESCRIPTION OF THE INVENTION
[0024] An electrostatic chuck device according to this embodiment will be described below with reference to Figures 1 to 6. In all of the following figures, the dimensions and proportions of the components are appropriately changed to make the drawings easier to understand.
[0025] In the following explanation, an xyz Cartesian coordinate system is set, and the positional relationship of each component is explained with reference to this xyz Cartesian coordinate system. Here, a predetermined direction in a horizontal plane is defined as the x-axis direction, a direction perpendicular to the x-axis direction in the horizontal plane is defined as the y-axis direction, and a direction perpendicular to both the x-axis and y-axis directions (i.e., the vertical direction) is defined as the z-axis direction.
[0026] Fig. 1 is a schematic perspective view showing an electrostatic chuck device 1 of this embodiment. Fig. 2 is a partially enlarged view of the electrostatic chuck device 1. Fig. 3 is a cross-sectional view of the electrostatic chuck device 1, taken along line III-III in Fig. 2.
[0027] 1 to 3, an electrostatic chuck device 1 of this embodiment includes a base 10 that supports a plate-like sample (wafer W), and an electrostatic attraction electrode 20 provided inside the base 10. The electrostatic chuck device 1 is used to fix and hold the wafer W when inspecting the processed wafer W for the presence or absence of scratches on the surface or dust adhering to the surface, and for whether the formed wiring structure satisfies design requirements.
[0028] The electrostatic chuck device 1 has grooves 19 formed in two locations on the base 10. The grooves 19 are dug downward (in the −z direction) from the upper surface 10a of the base 10 and extend in the surface direction (in the x direction in FIG. 1). Support portions X of a transfer fork used to transfer the wafer W are inserted into the grooves 19, and the wafer W is placed on the base 10 before inspection and removed after inspection.
[0029] In conventional electrostatic chuck devices used for such purposes, the base 10 becomes charged as the wafer W is repeatedly inspected, which can cause problems when fixing and removing the wafer W. In contrast, the electrostatic chuck device 1 of the present embodiment has the charge removal unit 30, which solves the above-mentioned problems. Each component will be described below in order.
[0030] 《Base》 The base 10 is made of a dielectric material and supports the wafer W. As shown in Figures 2 and 3, the base 10 has a plurality of protrusions 15 that protrude upward (in the +z direction) from the upper surface 10a and support the wafer W at their upper ends. An imaginary plane connecting the upper ends of the plurality of protrusions 15 corresponds to the mounting surface that supports the wafer W.
[0031] As described above, the surface of the base 10 on which the protrusions 15 are formed, in other words, the bottom surface of the protrusions 15 as viewed from the top end thereof, is set as the reference surface, being the "top surface 10a," and the protrusions 15 are expressed as protruding upward from the top surface 10a. The grooves 19 described above are also expressed as having a structure dug downward from the top surface 10a.
[0032] The protrusions 15 have a cylindrical or truncated cone shape, and the cross section along the upper surface 10a is circular. The shape of the protrusions 15 is not limited to a truncated cone. Furthermore, the cross-sectional shape of the protrusions 15 is not limited to a circle, and may be an ellipse or a polygonal shape such as a triangle or a rectangle.
[0033] Regardless of the cross-sectional shape of the protrusions 15, when the smallest circumscribing circle when the protrusions 15 are viewed in plan is assumed, the diameter of the circumscribing surface is 0.5 mm or less. Furthermore, the area of the plurality of protrusions 15 in plan view is 5% or less of the area of the first substrate 11 in plan view. By making the protrusions 15 such a size, the contact area between the protrusions 15 and the wafer W is small, and frictional electrification between the protrusions 15 and the wafer W is suppressed.
[0034] The height of the protrusions 15 (the height from the upper surface 10a to the upper end 15a of the protrusions 15) is preferably 15 μm or less.
[0035] (First base, second base) The base 10 has a first substrate 11 and a second substrate 12. The first substrate 11 and the second substrate 12 are stacked in the thickness direction.
[0036] The first substrate 11 has a circular plate shape in a plan view. The upper surface of the first substrate 11 is the upper surface 10a of the base 10. The first substrate 11 is made of a ceramic material, which is a dielectric material.
[0037] The relative dielectric constant of first substrate 11 is 10 or more, and preferably 12 or more.
[0038] Suitable ceramic materials for forming the first substrate 11 include, for example, aluminum oxide (Al2O3) sintered body, aluminum nitride (AlN) sintered body, and aluminum oxide (Al2O3)-silicon carbide (SiC) composite sintered body.
[0039] The second substrate 12 has a circular plate shape in a plan view and is made of a ceramic material.
[0040] Suitable ceramic materials for forming the second substrate 12 include, for example, Al2O3 sintered body, AlN sintered body, and Al2O3-SiC composite sintered body. The second substrate 12 may be made of the same material as the first substrate 11, or may be made of a different material from the first substrate 11.
[0041] The second substrate 12 may be made of a single sintered body, or may be made by stacking and bonding a plurality of sintered bodies in the thickness direction. In this case, the plurality of sintered bodies may be made of different ceramic materials.
[0042] (electrode for electrostatic adsorption) The electrostatic attraction electrode 20 is in contact with the lower surface of the first substrate 11 and is provided between the first substrate 11 and the second substrate 12. The area of the electrostatic attraction electrode 20 in a plan view is 80% or more of the area of the base body 10 in a plan view.
[0043] The electrostatic attraction electrode 20 is a composite of an insulating material and a conductive material. The insulating material contained in the electrostatic attraction electrode 20 is not particularly limited, but is preferably at least one selected from the group consisting of Al2O3, AlN, silicon nitride (Si3N4), yttrium (III) oxide (YO3), yttrium aluminum garnet (YAG), and SmAlO3.
[0044] A power supply terminal (not shown) is connected to the electrostatic attraction electrode 20. The power supply terminal applies a voltage to the electrostatic attraction electrode 20. When the voltage is applied, the electrostatic attraction electrode 20 generates an electrostatic attraction force that holds the wafer W supported by the protrusions 15.
[0045] (adhesive layer) The adhesive layer 25 is provided between the first substrate 11 and the second substrate 12, and bonds the first substrate 11 and the second substrate 12 together.
[0046] Examples of materials for the adhesive layer 25 include silicone resins, acrylic resins, epoxy resins, and polyimide resins.
[0047] The adhesive layer 25 may be formed by applying a paste-like adhesive to one surface of the second substrate 12 and curing it, or by placing a sheet-like adhesive between the first substrate 11 and the second substrate 12 and curing it.
[0048] (Static eliminator) The charge removal unit 30 has a function of removing electric charges that accumulate on the base 10 due to repeated use (inspection of the wafer W). The charge removal unit is provided to protrude from the upper surface 10a of the base 10 to the same height as the protrusions 15.
[0049] The static eliminator 30 includes a conductive member 31 and a conductive film 32 .
[0050] (Conductive material) The conductive member 31 is made of a conductive material and is embedded in the base 10. The conductive member 31 is connected to a GND potential.
[0051] The conductive member 31 penetrates the base 10 in the thickness direction (z direction) and protrudes upward from the upper surface 10a of the base 10 to the same height as the protrusions 15. The wafer W is easily charged due to charges from the electron beam, secondary electrons generated by the potential difference between the wafer W and the electrostatic attraction electrode 20, friction between the wafer W and the base 10, and the like. Because the conductive member 31 protrudes as described above, it is easy to electrically connect to the wafer W via the conductive film 32, and the wafer W can be easily neutralized.
[0052] 3, the conductive member 31 has a first conductive member 311 embedded in the first substrate 11 and a second conductive member 312 embedded in the second substrate 12. The first conductive member 311 and the second conductive member 312 are electrically connected to each other to form the conductive member 31.
[0053] The first conductive member 311 is a cylindrical member having a through hole 311x penetrating in the z direction, and the second conductive member 312 is a cylindrical member having a through hole 312x penetrating in the z direction. The through holes 311x and 312x have the same central axis and are in communication with each other, forming a through hole 31x that penetrates the conductive member 31 in the thickness direction of the base 10.
[0054] The static eliminator 30 has a static eliminator protrusion 33 that surrounds the conductive member 31 in a plan view. As shown in Fig. 2, the static eliminator protrusion 33 is provided in a circular shape concentric with the conductive member 31 in a plan view.
[0055] As shown in FIG. 3, the static eliminator protrusion 33 is provided to protrude from the upper surface 10a of the base 10 at the same height as the protrusion 15 and the conductive member 31.
[0056] Moreover, the conductive member 31 is preferably provided in the center of the base 10 in plan view (indicated by the reference numeral 31 in FIG. 1).
[0057] (Conductive film) The conductive film 32 is provided in contact with and covers the upper end 31a of the conductive member 31. The conductive film 32 is also in contact with and covers the upper end 33a of the static eliminator protrusion 33, which is provided at the same height as the conductive member 31, as well as the upper end 31a.
[0058] The conductive film 32 is a film formed in a predetermined pattern using a conductive material, and examples of materials that can be used for the conductive film 32 include non-magnetic metals such as TiN, Ti, and aluminum, and compounds thereof. The conductive film 32 can be obtained by forming the conductive film 32 on the substrate 10 using these materials and a known patterning technique.
[0059] The conductive film 32 is electrically connected to the conductive member 31. This connects the static eliminator 30 to the GND potential, enabling static elimination from members in contact with the static eliminator 30 (the conductive member 31, the conductive film 32).
[0060] The conductive film 32 is preferably provided from the upper end 31a of the conductive member 31 to the upper surface 10a of the base 10. In this case, by making the thickness of the conductive film 32 smaller (thinner) than the height of the protrusions 15, the conductive film 32 provided on the upper surface 10a is not positioned above the protrusions 15, and the wafer W can be suitably supported by the protrusions 15.
[0061] Furthermore, it is preferable that the conductive film 32 is provided from the upper end 31a of the conductive member 31 to the upper ends 15a of some of the plurality of protrusions 15. In such a configuration, the base 10 and the wafer W can be neutralized at the plurality of protrusions 15 having the conductive film 32 provided on their upper ends 15a.
[0062] In such a configuration, it is preferable that the conductive film 32 is provided in a strip shape in a plan view, as shown in FIGS.
[0063] The conductive film 32 has a shape that combines a plurality of first films 321 and a plurality of second films 322. The first films 321 have a common center and are provided in a circular or arc shape. The second films 322 are connected to the plurality of first films 321.
[0064] In a plan view, the area of the conductive film 32 in a plan view is 20% or less of the area of the base 10 in a plan view. By forming the conductive film 32 with the above area and forming the electrostatic attraction electrode 20 to be 80% or more of the area of the base 10 in a plan view as described above, the wafer W can be attracted appropriately even if the base 10 is neutralized by the conductive film 32.
[0065] Fig. 4 is a partial plan view of the electrostatic chuck device 1 showing details of the conductive film 32. Fig. 5 is an enlarged view of the position of the symbol α in the figure. As shown in Figs. 4 and 5, the conductive film 32 has a first film 321A provided on the outermost periphery in a plan view, and first films 321B, 321C, and 321D provided concentrically with the base 10 and the first film 321A.
[0066] A second film 322A extending in the x direction is provided at the center of the base 10 in a plan view, and connects the first films 321A to 321D at the center of the base 10. As shown in Fig. 2, the second film 322A overlaps the conductive member 31, the static eliminator convex portion 33, and the multiple convex portions 15 arranged in the x direction in a plan view. The second film 322A has a first portion 322x provided with an equal width and a second portion 322y that overlaps with the static eliminator convex portion 33 and is formed to bulge out more than the static eliminator convex portion 33.
[0067] Further, second films 322B and 322C are provided parallel to second film 322A along groove 19, and an arc-shaped second film 322D is provided connecting second films 322B and 322C and first film 321B.
[0068] (periphery of the substrate) The first film 321A and the second films 322B, 322C, and 322D are connected to one another and form a peripheral film that is provided along the outer edge 10b of the base 10 in a plan view. The first film 321A is a part of the peripheral film.
[0069] The peripheral films (first film 321A, second films 322B, 322C, 322D) are provided inside the outer edge 10b of the base 10 in plan view.
[0070] In a plan view, the upper surface 10a of the base 10 is continuous from the inner periphery of the base 10 to the outer edge 10b of the base 10. The upper surface 10a may be connected to the outer edge 10b of the base 10 over the entire periphery, or a protrusion 15 may be provided on a part of the outer edge 10b.
[0071] 5, the separation distance W1 between adjacent protrusions 15 is 20 times or more the diameter of the protrusions 15 in a plan view (the diameter of the circumscribing circle of the protrusions 15 in a plan view). Furthermore, the distance W2 from the outermost protrusion 15A, which is closest to the outer edge 10b of the first substrate 11 among the multiple protrusions 15, to the outer edge 10b of the first substrate 11 is shorter than the separation distance W1.
[0072] The distances Wa, Wb, and Wc between the radially adjacent first films 321A to 321D are preferably 40 mm or less. The radius of the circular first film 321D is preferably 40 mm or less. The inventors' studies have confirmed that static electricity can be suitably eliminated from the conductive film 32 if the conductive film 32 is within a range of 40 mm from the conductive film 32 in a plan view. Therefore, if the distance between the first films is 40 mm or less and the radius of the innermost first film 321D is 40 mm or less, static electricity can be suitably eliminated by the conductive film formed.
[0073] The conductive member 31 is preferably provided in an area AR surrounded by the innermost first film 321D among the plurality of first films 321. In the drawing, this corresponds to the conductive member indicated by the reference symbol 31A. By arranging the conductive member 31 in this manner, it becomes possible to neutralize the base body 10 evenly via the conductive film 32.
[0074] The conductive member 31 may be provided at a position where the first film 321 and the second film 322 intersect (for example, the position indicated by the symbol A in FIG. 4). Charges transmitted from both the first film 321 and the second film 322 are collected in the conductive member 31 provided at such a position, and the charges can be removed efficiently.
[0075] (pin) Additionally, it is preferable that the static eliminator 30 has a pin 50 that is inserted into a through-hole 31x of the conductive member 31 and that can protrude upward from the upper end of the static eliminator 30. The pin 50 may be a lift pin that pushes up the wafer W from the backside, or may be a static eliminator pin that is electrically connected to the conductive member 31 and is capable of puncturing an insulating layer (not shown) on the backside of the wafer W. When the pin 50 is a static eliminator pin, the charge accumulated on the wafer W can be suitably eliminated.
[0076] According to the electrostatic chuck device 1 configured as described above, the electric charges collected through the conductive film can be suitably removed through the conductive member, thereby suppressing the charging of the base constituting the mounting surface.
[0077] While the preferred embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to these examples. The shapes and combinations of the components shown in the above examples are merely examples, and various modifications can be made based on design requirements, etc., without departing from the spirit of the present invention.
[0078] For example, in this embodiment, the conductive film 32 is provided to cover multiple convex portions 15, but this is not limited to this, and the conductive film 32 may be provided from the static elimination portion convex portion 33 to the upper surface 10a of the substrate 10, or may be provided only on the upper surface of the static elimination portion convex portion 33.
[0079] Furthermore, in this embodiment, the static eliminator 30 has the static eliminator protrusion 33 that protrudes to the same height as the conductive member 31, but the static eliminator protrusion 33 does not have to be formed.
[0080] Furthermore, the conductive member 31 may be flush with the upper surface 10a and electrically connected to the conductive film 32 on the upper surface 10a (between the protrusions 15).
[0081] In addition, in this embodiment, the conductive member 31 is described as being a cylindrical member, but is not limited to this. The conductive member 31 may have another configuration as long as it is electrically connected to the conductive film 32 and can neutralize the first substrate 11 and the wafer W via the conductive film 32.
[0082] For example, like the conductive member 35 shown in Fig. 6, the conductive member may be a rod-shaped member connected to the conductive film 32. The upper end of the conductive member 35 in Fig. 6 is provided at the same height as the upper end 33a of the static eliminator convex portion 33, but it may also be at the same height as the upper surface 10a and electrically connected to the conductive film 32 on the upper surface 10a (between the convex portions 15).
[0083] Even with the static eliminator 30 having such a configuration, the effects of the present invention can be achieved. [Explanation of symbols]
[0084] 1...electrostatic chuck device, 10...base body, 10a...upper surface, 11...first substrate, 12...second substrate, 15...protrusion, 15a, 31a, 33a...upper end, 19...groove, 20...electrostatic attraction electrode, 30...discharge removal section, 31...conductive member, 31x, 311x, 312x...through holes, 32...conductive film, 33...discharge removal section protrusion, 50...pin, 311...first conductive member, 312...second conductive member, W...wafer
Claims
1. a base that is circular in plan view and made of a dielectric material and supports a plate-shaped sample; an electrostatic attraction electrode provided inside the base body, the base includes a plurality of protrusions provided to protrude upward from an upper surface of the base and supporting the plate-shaped sample at their upper ends; a static eliminator provided so as to protrude from the upper surface of the base to the same height as the protrusion, the upper surface of the base is continuous from the inner periphery of the base to the outer edge of the base in a plan view, The static eliminator includes a conductive member embedded in the base and penetrating the base in a thickness direction; a strip-shaped conductive film provided to cover an upper end of the conductive member, the area of the conductive film in a plan view is 20% or less of the area of the base in a plan view, the area of the electrostatic attraction electrode in a plan view is 80% or more of the area of the base in a plan view, the conductive film has a peripheral film provided along the outer edge of the base in a plan view, The electrostatic chuck device, wherein the outer peripheral film is provided inside the outer edge.
2. The conductive film includes a plurality of first films each having a common center and provided in a circular or arc shape; a second film connecting the plurality of first films, The electrostatic chuck device according to claim 1 , wherein the first film is at least a part of the outer peripheral film.
3. 3. The electrostatic chuck device according to claim 2, wherein the distance between adjacent first films in the radial direction is 40 mm or less.
4. 4. The electrostatic chuck device according to claim 2, wherein the conductive member is provided in a region surrounded by an innermost first film among the plurality of first films.
5. 4. The electrostatic chuck device according to claim 2, wherein the conductive member is provided at a position where the first film and the second film intersect.
6. 4. The electrostatic chuck device according to claim 1, wherein the conductive member protrudes from the upper surface of the base to the same height as the protrusion.
7. the static eliminator has a static eliminator protrusion provided to protrude from the upper surface of the base to the same height as the protrusion, the conductive member is provided inside an outer edge of the static eliminator convex portion in a plan view, an upper end of the static eliminator protrusion and an upper end of the conductive member are provided at the same height; 7. The electrostatic chuck device according to claim 6, wherein the conductive film covers an upper end of the charge removing portion convex portion and an upper end of the conductive member.
8. The base includes a first substrate made of a dielectric material; a second substrate that sandwiches the electrostatic attraction electrode together with the first substrate, the first substrate has the plurality of protrusions on an upper surface thereof, The conductive member includes a first conductive member embedded in the first substrate and electrically connected to the conductive film; 4. The electrostatic chuck device according to claim 1, further comprising: a second conductive member embedded in the second substrate and electrically connected to the first conductive member.
9. the conductive member has a through hole penetrating in the thickness direction, The electrostatic chuck device according to claim 1 , wherein the charge eliminating portion has a pin that is inserted into the through hole and can protrude upward from an upper end of the charge eliminating portion.
10. 10. The electrostatic chuck device according to claim 9, wherein the pin is electrically connected to the conductive member and is provided so as to be able to pierce an insulating layer on the back surface of the plate-shaped sample.
11. 4. The electrostatic chuck device according to claim 1, wherein the base is provided with a groove portion that is dug below an upper surface of the base and extends in a surface direction.
Citation Information
Patent Citations
Slotted electrostatic chuck
WO2019245791A1