Substrate processing apparatus and substrate processing method

Abstract

To achieve the optimization of substrate processing using a mixed fluid obtained by mixing a processing liquid containing at least sulfuric acid and a fluid containing vapor or mist of pure water.SOLUTION: A substrate processing apparatus according to the present disclosure includes a substrate holding unit, a nozzle, a fluid supply unit, a processing liquid supply unit, a gas supply unit, and a gas flow rate adjusting unit. The substrate holding unit rotatably holds a substrate. The nozzle is connected to the fluid supply unit, the processing liquid supply unit, and the gas supply unit, and discharges a mixed fluid of a fluid, a processing liquid, and an inert gas onto the substrate. The fluid supply unit supplies the fluid containing pressurized vapor or mist of pure water to the nozzle. The processing liquid supply unit supplies the processing liquid containing at least sulfuric acid to the nozzle. The gas supply unit supplies the inert gas to the nozzle. The gas flow rate adjusting unit adjusts a flow rate of the inert gas supplied to the nozzle.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Conventionally, SPM (Sulfuric Acid Hydrogen Peroxide Mixture) processing has been known as a method for removing resist films. In SPM processing, an SPM liquid, obtained by mixing sulfuric acid and hydrogen peroxide, is supplied to a substrate such as a semiconductor wafer to remove the resist film formed on the substrate.

[0003] Furthermore, mixing SPM liquid with water vapor has been proposed as a method for increasing the temperature of the SPM liquid (Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2022-63225 Summary of the Invention [Problem to be solved by the invention]

[0005] The above-mentioned techniques have room for improvement in terms of optimizing substrate processing using a mixed fluid obtained by mixing an SPM liquid with water vapor.

[0006] The present disclosure provides a technique capable of optimizing substrate processing using a mixed fluid obtained by mixing a processing liquid containing at least sulfuric acid with a fluid containing vapor or mist of pure water. [Means for solving the problem]

[0007] A substrate processing apparatus according to one aspect of the present disclosure includes a substrate holding unit, a nozzle, a fluid supply unit, a processing liquid supply unit, a gas supply unit, and a gas flow rate adjustment unit. The substrate holding unit rotatably holds a substrate. The nozzle ejects a fluid, which is a mixture of a fluid containing pure water vapor or mist, a processing liquid containing at least sulfuric acid, and an inert gas, onto the substrate. The fluid supply unit supplies the fluid containing pure water vapor or mist to the nozzle. The processing liquid supply unit supplies the processing liquid containing at least sulfuric acid to the nozzle. The gas supply unit supplies the inert gas to the nozzle. The gas flow rate adjustment unit adjusts the flow rate of the inert gas supplied from the gas supply unit to the nozzle. [Effects of the Invention]

[0008] According to the present disclosure, it is possible to optimize substrate processing using a mixed fluid obtained by mixing a processing liquid containing at least sulfuric acid with a fluid containing vapor or mist of pure water. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a schematic side view of the substrate processing apparatus according to the first embodiment. [Figure 3] FIG. 3 is a cross-sectional view of the first nozzle according to the first embodiment, taken along a plane perpendicular to the longitudinal direction. [Figure 4] FIG. 4 is a diagram showing an example of a cross-sectional shape taken along the line IV-IV shown in FIG. [Figure 5] FIG. 5 is a diagram showing an example of a cross-sectional shape taken along the arrow VV shown in FIG. [Figure 6] FIG. 6 is a flowchart showing an example of a procedure of processing executed by the substrate processing apparatus according to the first embodiment. [Figure 7] FIG. 7 is a schematic side view of the substrate processing apparatus according to the second embodiment. [Figure 8] FIG. 8 is a cross-sectional view of the first nozzle according to the second embodiment, taken along a plane perpendicular to the longitudinal direction. [Figure 9]FIG. 9 is a diagram showing an example of a cross-sectional shape taken along the arrows IX-IX shown in FIG. [Figure 10] FIG. 10 is a diagram showing an example of a cross-sectional shape taken along the arrow XX shown in FIG. [Figure 11] FIG. 11 is a schematic cross-sectional view of a first nozzle according to the third embodiment. [Figure 12] FIG. 12 is a cross-sectional view of a first nozzle according to the fourth embodiment, taken along a plane perpendicular to the longitudinal direction. [Figure 13] FIG. 13 is a schematic plan view of a first nozzle according to the fourth embodiment as viewed from below. [Figure 14] FIG. 14 is a diagram showing an example of a cross-sectional shape taken along the arrows XIV-XIV shown in FIG. [Figure 15] FIG. 15 is a diagram showing an example of a cross-sectional shape taken along the arrows XV-XV shown in FIG. [Figure 16] FIG. 16 is a diagram showing an example of a cross-sectional shape taken along the arrows XVI-XVI shown in FIG. [Figure 17] FIG. 17 is a schematic side view of a substrate processing apparatus according to a fifth embodiment. [Figure 18] FIG. 18 is a cross-sectional view of a first nozzle according to the sixth embodiment, taken along a plane perpendicular to the longitudinal direction. [Figure 19] FIG. 19 is a diagram showing an example of a cross-sectional shape taken along the arrows XIX-XIX shown in FIG. [Figure 20] FIG. 20 is a diagram showing an example of a cross-sectional shape taken along the arrows XX-XX shown in FIG. [Figure 21] FIG. 21 is a schematic plan view of the first flow path portion shown in FIG. 18 as viewed from below. [Figure 22] FIG. 22 is an enlarged view of a cross section of a first nozzle according to the seventh embodiment taken along a plane perpendicular to the short side direction. [Figure 23] FIG. 23 is a cross-sectional view of a first nozzle according to the eighth embodiment, taken along a plane perpendicular to the longitudinal direction. [Figure 24] FIG. 24 is a cross-sectional view of a first nozzle according to the ninth embodiment, taken along a plane perpendicular to the longitudinal direction. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments (hereinafter referred to as "embodiments") for carrying out a substrate processing apparatus and a substrate processing method according to the present disclosure will be described in detail with reference to the drawings. Note that the present disclosure is not limited to these embodiments. Furthermore, the embodiments can be appropriately combined within the scope of not causing any contradiction in the processing content. Furthermore, the same components in the following embodiments will be given the same reference numerals, and redundant explanations will be omitted.

[0011] In addition, in the following embodiments, expressions such as "horizontal" may be used, but these expressions do not necessarily mean "horizontal" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0012] In addition, in the drawings referred to below, for ease of understanding, an orthogonal coordinate system may be shown in which the X-axis, Y-axis, and Z-axis directions are defined as being perpendicular to each other, and the Z-axis direction is the vertically upward direction.

[0013] It is known that the temperature of the mixed fluid obtained by mixing SPM liquid and water vapor varies depending on the discharge flow rate of the water vapor, but the discharge flow rate of the water vapor is difficult to measure directly.

[0014] Therefore, it is desired to provide a technology that can optimize substrate processing using a fluid mixture by improving the accuracy and responsiveness of temperature control of the fluid mixture.

[0015] In the following embodiments, a substrate processing apparatus and a substrate processing method that can improve the accuracy and responsiveness of temperature control of a fluid mixture in SPM processing will be described.

[0016] The substrate processing apparatus according to the present disclosure can be applied to liquid processes other than SPM processing. Specifically, the substrate processing apparatus according to the present disclosure can be applied to liquid processes using a processing liquid containing at least sulfuric acid.

[0017] Examples of "processing liquids containing at least sulfuric acid" other than SPM liquid include processing liquids that react (heat up or increase etchant) when mixed with sulfuric acid, specifically, dilute sulfuric acid (a mixture of sulfuric acid and water), a mixture of sulfuric acid and ozone water, etc. Furthermore, the "processing liquid containing at least sulfuric acid" may be sulfuric acid.

[0018] <Configuration of substrate processing apparatus> Next, the configuration of a substrate processing apparatus according to a first embodiment will be described with reference to Figures 1 and 2. Figure 1 is a schematic plan view of the substrate processing apparatus according to the first embodiment. Figure 2 is a schematic side view of the substrate processing apparatus according to the first embodiment.

[0019] 1 and 2, the substrate processing apparatus 1 includes a chamber 101, a substrate holding unit 102, a cup unit 103, a first supply mechanism 104, and a second supply mechanism 105. The substrate processing apparatus 1 also includes a vapor supply unit 201 (an example of a fluid supply unit), an SPM supply unit 202 (an example of a processing liquid supply unit), an N2 gas supply unit 203 (an example of a gas supply unit), a DIW supply unit 204, and a hydrogen peroxide solution supply unit 205. The substrate processing apparatus 1 also includes an N2 gas flow rate adjustment unit 231 (an example of a gas flow rate adjustment unit), a first mixer 301, and a control device 70.

[0020] The chamber 101 accommodates a substrate holder 102, a cup 103, a first supply mechanism 104, and a second supply mechanism 105. An FFU (Fun Filter Unit) 111 that forms a downflow within the chamber 101 is provided on the ceiling of the chamber 101 (see FIG. 2).

[0021] The substrate holding unit 102 rotatably holds a semiconductor substrate (hereinafter referred to as a "wafer W") such as a silicon wafer or a compound semiconductor wafer. Specifically, the substrate holding unit 102 includes a main body 121 having a diameter larger than that of the wafer W, a plurality of gripping units 122 provided on the upper surface of the main body 121, support members 123 that support the main body 121, and a drive unit 124 that rotates the support members 123. Note that the number of gripping units 122 is not limited to that shown in the figure.

[0022] The substrate holding part 102 holds the wafer W by gripping the peripheral edge of the wafer W using a plurality of gripping parts 122. This allows the wafer W to be held horizontally while being slightly spaced apart from the upper surface of the main body part 121. As described above, a resist film is formed on the surface (upper surface) of the wafer W.

[0023] Here, the substrate holding unit 102 that holds the peripheral portion of the wafer W using multiple holding units 122 has been given as an example, but the substrate processing apparatus 1 may be configured to include a vacuum chuck that holds the back surface of the wafer W by suction instead of the substrate holding unit 102.

[0024] The cup portion 103 is disposed so as to surround the substrate holding portion 102. A drain port 131 for discharging the processing liquid supplied to the wafer W to the outside of the chamber 101 and an exhaust port 132 for exhausting the atmosphere inside the chamber 101 are formed at the bottom of the cup portion 103.

[0025] The first supply mechanism 104 includes a first nozzle 141, a first arm 142 that extends horizontally and supports the first nozzle 141 from above, and a first swivel and lift mechanism 143 that swivels and raises and lowers the first arm 142. The first swivel and lift mechanism 143 enables the first arm 142 to move the first nozzle 141 between a processing position above the wafer W and a standby position outside the wafer W.

[0026] The first nozzle 141 is a long nozzle that extends linearly in the horizontal direction. The first nozzle 141 has a length that is, for example, approximately the same as the radius of the wafer W. When the first nozzle 141 is placed at the processing position, the tip end of the first nozzle 141 in the longitudinal direction is located above the center of the wafer W, and the base end of the first nozzle 141 in the longitudinal direction is located above the peripheral edge of the wafer W.

[0027] The first nozzle 141 is connected to the SPM supply unit 202 via an SPM supply path 220. The SPM supply unit 202 supplies the first nozzle 141 via the SPM supply path 220 with an SPM liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide solution.

[0028] The first nozzle 141 is connected to the vapor supply unit 201 via the first supply path 310, the first mixing unit 301, and the vapor supply path 210. The vapor supply unit 201 generates vapor, which is steam of pressurized pure water (deionized water), and supplies the generated vapor to the first mixing unit 301 via the vapor supply path 210.

[0029] The first nozzle 141 is connected to the N2 gas supply unit 203 via the first supply path 310, the first mixing unit 301, the N2 gas supply path 230, and the N2 gas flow rate adjustment unit 231. The N2 gas supply unit 203 supplies N2 gas, which is an inert gas, to the first mixing unit 301 via the N2 gas supply path 230 and the N2 gas flow rate adjustment unit 231.

[0030] The first mixing section 301 is connected to the vapor supply section 201 and the N2 gas supply section 203, mixes the vapor with the N2 gas, and supplies the mixed fluid (hereinafter referred to as the "first mixed fluid") to the first nozzle 141 via the first supply path 310.

[0031] The N 2 gas flow rate adjusting unit 231 adjusts the flow rate of the N 2 gas supplied from the N 2 gas supply unit 203 to the first nozzle 141 .

[0032] Any known technology may be used to configure the SPM supply unit 202. For example, the SPM supply unit 202 may include a sulfuric acid supply source that supplies sulfuric acid, a hydrogen peroxide solution supply source that supplies hydrogen peroxide solution, and a mixer that mixes sulfuric acid and hydrogen peroxide solution. The SPM supply unit 202 can also supply sulfuric acid instead of SPM liquid.

[0033] The second supply mechanism 105 includes a second nozzle 151, a second arm 152 that extends horizontally and supports the second nozzle 151 from above, and a second swivel and lift mechanism 153 that swivels and raises and lowers the second arm 152. The second swivel and lift mechanism 153 enables the second arm 152 to move the second nozzle 151 between a processing position above the wafer W and a standby position outside the wafer W.

[0034] The second nozzle 151 is connected to the DIW supply unit 204 via a DIW supply path 240. The second nozzle 151 ejects DIW (pure water (deionized water)) supplied from the DIW supply unit 204 via the DIW supply path 240 onto the wafer W. The DIW supply unit 204 supplies DIW to the second nozzle 151 via the DIW supply path 240. The DIW supply unit 204 may be configured using any known technology.

[0035] Second nozzle 151 is connected to hydrogen peroxide supply unit 205 via hydrogen peroxide supply path 250. Second nozzle 151 ejects hydrogen peroxide supplied from hydrogen peroxide supply unit 205 via hydrogen peroxide supply path 250 onto wafer W. Hydrogen peroxide supply unit 205 supplies hydrogen peroxide to second nozzle 151 via hydrogen peroxide supply path 250. Hydrogen peroxide supply path 250 may be configured using any known technology.

[0036] The control device 70 is, for example, a computer, and includes a control unit 71 and a storage unit 72. The storage unit 72 stores programs that control various processes executed in the substrate processing apparatus 1. The control unit 71 controls the operation of the substrate processing apparatus 1 by reading and executing the programs stored in the storage unit 72. Specific details of the control by the control unit 71 will be described later.

[0037] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 72 of the control device 70. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0038] <Nozzle configuration> Next, the configuration of the first nozzle 141 will be described with reference to Figs. 3 to 5. Fig. 3 is a cross-sectional view of the first nozzle 141 according to the first embodiment, cut along a plane perpendicular to the longitudinal direction. Fig. 4 is a diagram showing an example of the cross-sectional shape as seen from the arrows IV-IV shown in Fig. 3. Fig. 5 is a diagram showing an example of the cross-sectional shape as seen from the arrows VV shown in Fig. 3.

[0039] 3, the first nozzle 141 includes a nozzle body 41, a first distribution path 42 (an example of a treatment liquid distribution path), two second distribution paths 43, and a plurality of second mixing sections 44. The first nozzle 141 also includes a plurality of first discharge ports 45 and a plurality of first discharge paths 46 (see FIG. 4), a plurality of second discharge ports 47 and a plurality of second discharge paths 48 (see FIG. 5).

[0040] The first distribution passage 42 and the second distribution passage 43 are provided inside the nozzle body 41. As shown in FIGS. 4 and 5, the first distribution passage 42 and the second distribution passage 43 extend along the longitudinal direction of the nozzle body 41. The first distribution passage 42 is disposed on the median line (the line that bisects the nozzle body 41 into left and right equal parts) in a cross-sectional view of the nozzle body 41. The two second distribution passages 43 are disposed on the left and right sides of the first distribution passage 42, respectively. Although two second distribution passages 43 are illustrated in FIG. 3, the number of second distribution passages 43 may be one. In such a case, one second distribution passage 43 may be disposed on either the left or right side of the first distribution passage 42.

[0041] The first distribution path 42 is connected to the SPM supply unit 202 via the SPM supply path 220, and distributes the SPM liquid supplied from the SPM supply path 220 throughout the entire discharge region R of the first nozzle 141. The second distribution path 43 is connected to the first mixing unit 301 via the first supply path 310, and distributes the first mixed fluid supplied from the first supply path 310 throughout the entire discharge region R of the first nozzle 141.

[0042] The plurality of first discharge ports 45 and the plurality of first discharge paths 46 are provided along the longitudinal direction of the first nozzle 141 (see FIG. 4). Each first discharge port 45 is connected to the first distribution path 42 via the first discharge path 46. The plurality of first discharge ports 45 are arranged over the entire area from one end to the other end in the longitudinal direction of the second mixing section 44 described below.

[0043] The plurality of second discharge ports 47 and the plurality of second discharge paths 48 are provided along the longitudinal direction of the first nozzle 141 (see FIG. 5). Each second discharge port 47 is connected to the second distribution path 43 via the second discharge path 48. The plurality of second discharge ports 47 are arranged over the entire area from one end to the other end in the longitudinal direction of the second mixing section 44 described below.

[0044] The SPM liquid supplied from the SPM supply unit 202 to the first distribution path 42 is distributed from the first distribution path 42 to multiple first discharge paths 46 and discharged from each first discharge port 45 to a second mixing unit 44 described below. Furthermore, the first mixed fluid supplied from the first mixing unit 301 to the second distribution path 43 is distributed from the second distribution path 43 to multiple second discharge paths 48 and discharged from each second discharge port 47 to the second mixing unit 44 described below.

[0045] The second mixing section 44 is provided below the first distribution path 42 and the second distribution path 43. The multiple first discharge ports 45 and the multiple second discharge ports 47 open to the upper end surface of the second mixing section 44. As shown in FIGS. 3 to 5, the second mixing section 44 is a mixing space provided in the lower part of the nozzle body 41, and mixes the SPM liquid and the first mixed fluid. The second mixing section 44 extends along the vertical direction (here, the Z-axis direction). The lower end of the second mixing section 44 is open.

[0046] The SPM liquid discharged from the first discharge port 45 and the first mixed fluid discharged from the second discharge port 47 are mixed near the upper end, which is the inlet of the second mixing section 44. As a result, a mixed fluid of vapor, N2 gas, and SPM liquid (hereinafter referred to as the "second mixed fluid") is generated inside the second mixing section 44, and the generated second mixed fluid is discharged from the lower end, which is the outlet of the second mixing section 44, toward the wafer W.

[0047] In this way, the substrate processing apparatus 1 according to the first embodiment discharges the second mixed fluid obtained by mixing the SPM liquid, the vapor, and the N2 gas onto the wafer W. Adding N2 gas to the SPM liquid and the vapor suppresses the exothermic reaction between the moisture in the vapor and the SPM liquid. As a result, the temperature of the mixed fluid to which N2 gas has been added (the second mixed fluid) becomes lower than the temperature of the mixed fluid to which N2 gas has not been added. The substrate processing apparatus 1 according to the first embodiment can control the discharge temperature of the second mixed fluid discharged from the first nozzle 141 by adjusting the flow rate of the N2 gas using the N2 gas flow rate adjuster 231. Therefore, the substrate processing apparatus 1 according to the first embodiment can improve the accuracy and responsiveness of the temperature control of the mixed fluid.

[0048] The control unit 71 (see FIG. 1) adjusts the flow rate of the N2 gas, thereby performing a temperature adjustment process to adjust the discharge temperature of the second mixed fluid discharged from the first nozzle 141. For example, the control unit 71 controls the N2 gas flow rate adjustment unit 231 so that the flow rate of the N2 gas supplied from the N2 gas supply unit to the first nozzle 141 becomes a preset flow rate.

[0049] In the temperature adjustment process, the flow rate of the vapor supplied from the vapor supply unit 201 to the first nozzle 141 and the flow rate of the SPM liquid supplied from the SPM supply unit 202 to the first nozzle 141 are constant. That is, in the temperature adjustment process, the control unit 71 keeps the flow rates of the vapor and SPM liquid supplied to the first nozzle 141 constant, and adjusts only the flow rate of the N2 gas supplied to the first nozzle 141. This makes it possible, for example, to keep the output of a device that generates vapor constant, thereby maintaining a stable operating state. Furthermore, because the ratio of sulfuric acid and hydrogen peroxide contained in the SPM liquid can be kept constant, a stable operating state can be maintained in the mixing process of the vapor and SPM liquid, which causes an exothermic reaction.

[0050] <Specific operation of the substrate processing apparatus> Next, an example of a specific operation of the substrate processing apparatus 1 according to the first embodiment will be described with reference to Fig. 6. Fig. 6 is a flowchart showing an example of a procedure of processing executed by the substrate processing apparatus 1 according to the first embodiment. A series of processing steps shown in Fig. 6 is executed under the control of the control unit 71.

[0051] First, a wafer W is loaded into the substrate processing apparatus 1 (step S101). Specifically, the wafer W is loaded into the chamber 101 of the substrate processing apparatus 1 from a substrate transfer device (not shown in FIG. 1) and held by the substrate holding part 102. Thereafter, the substrate processing apparatus 1 rotates the substrate holding part 102 at a predetermined rotation speed.

[0052] Next, in the substrate processing apparatus 1, a liquid film forming process is performed (step S102). In the liquid film forming process, first, the second swivel lifting mechanism 153 (see FIG. 1) moves the second nozzle 151 from the standby position to a processing position above the wafer W. Then, the second nozzle 151 ejects DIW onto the upper surface of the wafer W. The DIW ejected onto the wafer W is spread over the upper surface of the wafer W by the centrifugal force of the rotating wafer W. As a result, a liquid film of DIW is formed on the upper surface of the wafer W.

[0053] Next, a heating process is performed in the substrate processing apparatus 1 (step S103). The heating process is a process for heating the first nozzle 141.

[0054] Specifically, first, the first swivel lifting mechanism 143 moves the first nozzle 141 from the standby position to a processing position above the wafer W. This positions the discharge region R of the first nozzle 141 above the wafer W. Thereafter, vapor is supplied to the first nozzle 141, and the vapor is discharged from the first nozzle 141 onto the surface of the wafer W. During this time, DIW continues to be discharged from the second nozzle 151.

[0055] In this way, by flowing vapor, that is, pressurized DIW steam, inside the first nozzle 141, the first nozzle 141 can be heated, and heating the first nozzle 141 suppresses condensation in the first nozzle 141. When the SPM liquid is supplied inside the first nozzle 141 in the processing liquid supply process or mixed fluid supply process described below, if condensed water is present inside the first nozzle 141, the condensed water may react with the SPM liquid, causing bumping. In response to this, bumping can be suppressed by heating the first nozzle 141 and suppressing condensation.

[0056] Furthermore, by forming a liquid film on the wafer W in the liquid film forming process prior to the heating process, it is possible to suppress the influence of vapor discharged from the first nozzle 141 on the wafer W during the heating process.

[0057] Next, a first drying process (step S104) is performed in the substrate processing apparatus 1. In the first drying process, after the discharge of vapor from the first nozzle 141 and the discharge of DIW from the second nozzle 151 are stopped, the wafer W is rotated for a certain period of time to remove moisture remaining on the wafer W.

[0058] In this way, by removing moisture from the wafer W, it is possible to prevent the SPM liquid discharged onto the wafer W in the processing liquid supply process described below from reacting with the moisture on the wafer W and affecting the wafer W.

[0059] Next, a processing liquid supply process is performed in the substrate processing apparatus 1 (step S105). The processing liquid supply process is a process of supplying the SPM liquid to the wafer W prior to a mixed fluid supply process, which will be described later. Specifically, in the processing liquid supply process, the SPM liquid is ejected onto the upper surface of the wafer W from the first nozzle 141.

[0060] In the mixed fluid supply process described below, the second mixed fluid is discharged from the first nozzle 141. At this time, if the second mixed fluid is discharged onto the dried wafer W before the SPM liquid, the discharged second mixed fluid may affect the wafer W. In contrast, by performing the processing liquid supply process prior to the mixed fluid supply process, the effect of vapor on the wafer W can be suppressed.

[0061] In the processing liquid supply process, it is also possible to discharge sulfuric acid or hydrogen peroxide solution onto the wafer W instead of the SPM liquid. However, if sulfuric acid is supplied first and then hydrogen peroxide solution is supplied, the sulfuric acid and hydrogen peroxide solution may react inside the first nozzle 141, increasing the pressure and potentially causing splashing of the SPM liquid during the subsequent mixed fluid supply process. Furthermore, if hydrogen peroxide solution is supplied first and then sulfuric acid is supplied, the sulfuric acid and hydrogen peroxide solution may react inside the first nozzle 141, potentially causing a large amount of fumes during the subsequent mixed fluid supply process. For this reason, the SPM liquid is suitable as the liquid to be supplied to the wafer W prior to the mixed fluid supply process.

[0062] The first discharge port 45 from which the SPM liquid is discharged has a relatively small diameter. For this reason, if the SPM liquid is discharged at a large flow rate in the processing liquid supply process, the flow rate of the SPM liquid may become too fast, which may cause the SPM liquid to splash on the wafer W. For this reason, it is preferable that the flow rate of the SPM liquid in the processing liquid supply process be set to be smaller than the flow rate of the SPM liquid in the mixed fluid supply process described below.

[0063] Next, in the substrate processing apparatus 1, a mixed fluid supply process is performed (step S106). In the mixed fluid supply process, the second mixed fluid is discharged from the first nozzle 141 onto the surface of the wafer W. The vapor and N2 gas supplied to the first nozzle 141 are mixed in advance in the first mixing section 301. The mixed fluid supply process removes the resist film formed on the surface of the wafer W. After the mixed fluid supply process is completed, the first swiveling lifting mechanism 143 moves the first nozzle 141 from the processing position to the standby position. The specific content of the mixed fluid supply process will be described later.

[0064] The temperature adjustment process, i.e., the process of adjusting the flow rate of N2 gas, may be performed before the mixed fluid supply process of step S106 is started. In other words, the flow rate of N2 gas may be adjusted to a given flow rate by the time the mixed fluid supply process is started.

[0065] Next, in the substrate processing apparatus 1, a sulfuric acid supplying process is performed (step S107). In the sulfuric acid supplying process, sulfuric acid is discharged onto the upper surface of the wafer W from the first nozzle 141. The sulfuric acid is supplied from the SPM supply unit 202. The sulfuric acid discharged onto the wafer W is spread over the upper surface of the wafer W by the centrifugal force of the rotating wafer W.

[0066] After the mixed fluid supply process, SPM liquid may remain inside the first nozzle 141. Because the SPM liquid has foaming properties, if SPM liquid remains inside the first nozzle 141, the SPM liquid may foam inside the first nozzle 141, and this foaming may cause the SPM liquid to run out inside the first nozzle 141, which may cause the SPM liquid to drop from the first nozzle 141 onto the wafer W.

[0067] Therefore, by replacing the SPM liquid remaining inside the first nozzle 141 with sulfuric acid by a sulfuric acid supply process, it is possible to prevent the SPM liquid from dropping onto the wafer W from the first nozzle 141.

[0068] It is also possible to use hydrogen peroxide instead of sulfuric acid in the sulfuric acid supply process. If hydrogen peroxide is used instead, there is a risk that the hydrogen peroxide will react with moisture and cause liquid splashes. For this reason, sulfuric acid is suitable as a liquid to replace the SPM liquid remaining inside the first nozzle 141.

[0069] Next, a second drying process is performed in the substrate processing apparatus 1 (step S108). In the second drying process, after the discharge of sulfuric acid from the first nozzle 141 is stopped, the wafer W is rotated for a certain period of time to remove sulfuric acid remaining on the wafer W. During the second drying process, the second swivel lifting mechanism 153 moves the second nozzle 151 from the standby position to a processing position above the wafer W.

[0070] Next, a rinse process is performed in the substrate processing apparatus 1 (step S109A). In this rinse process, hydrogen peroxide solution is supplied from the second nozzle 151 to the surface of the wafer W. The hydrogen peroxide solution supplied to the wafer W is spread over the surface of the wafer W by centrifugal force caused by the rotation of the wafer W. As a result, the upper surface of the wafer W is replaced with hydrogen peroxide solution.

[0071] As described above, in the substrate processing apparatus 1 according to the first embodiment, during the rinse process, hydrogen peroxide solution is supplied to the wafer W from the second nozzle 151, which is a nozzle separate from the first nozzle 141. This configuration can suppress liquid splashing that occurs when the rinse process is performed using the first nozzle 141 and is caused by bumping due to a reaction between the moisture remaining inside the first nozzle 141 and the hydrogen peroxide solution. During the rinse process, the control unit 71 controls the first swivel lifting mechanism 143 to move the first nozzle 141 to the standby position. After the rinse process is completed, the control unit 71 controls the second swivel lifting mechanism 153 to move the second nozzle 151 to the standby position.

[0072] In addition, in the substrate processing apparatus 1, an N2 gas supply process is performed in parallel with the rinsing process (step S109B). In this N2 gas supply process (an example of an inert gas supply process), N2 gas is supplied from the first nozzle 141 to the surface of the wafer W. If sulfuric acid and moisture remain inside the first nozzle 141 after the sulfuric acid supply process, a mixed residual liquid of the remaining sulfuric acid and moisture may fall onto the wafer W. Because the mixed residual liquid becomes hot due to a reaction, if the mixed residual liquid falls onto the wafer W, the wafer W may become locally hot, which may reduce the temperature uniformity of the wafer W. Therefore, by discharging the mixed residual liquid from inside the nozzle to the outside of the nozzle using the N2 gas supply process, it is possible to prevent a decrease in the temperature uniformity of the wafer W due to the falling of the mixed residual liquid. Note that by performing the N2 gas supply process simultaneously with the rinsing process, it is possible to reduce the impact on the wafer W of the mixed residual liquid and N2 gas discharged onto the wafer W from inside the first nozzle 141.

[0073] The N2 gas supply process may be started simultaneously with the start of the rinsing process or after the start of the rinsing process.

[0074] Furthermore, the N2 gas supply process does not necessarily need to be performed in parallel with the rinsing process. For example, the N2 gas supply process may be performed after the second drying process and before the rinsing process, or after the rinsing process and before the third drying process, or after the third drying process. In this case, the first nozzle 141 may eject N2 gas toward, for example, a dummy dispense bath (not shown) disposed at a standby position outside the wafer W.

[0075] Next, a third drying process is performed in the substrate processing apparatus 1 (step S110). In the third drying process, the control unit 71 increases the rotation speed of the wafer W. This causes the rinse liquid remaining on the wafer W to be shaken off, and the wafer W is dried. Thereafter, the rotation of the wafer W is stopped.

[0076] Next, an unloading process is performed in the substrate processing apparatus 1 (step S111). In the unloading process, the wafer W held by the substrate holding part 102 is transferred to a substrate transfer device (not shown in FIG. 1). When the unloading process is completed, the substrate processing for one wafer W is completed.

[0077] Second Embodiment In the first embodiment, an example has been described in which vapor and N2 gas are mixed in the first mixing section 301 provided outside the first nozzle 141. However, the present invention is not limited to this, and the vapor and N2 gas may be mixed inside the first nozzle 141. In the second embodiment, an example in which vapor, N2 gas, and SPM liquid are mixed inside the first nozzle 141 will be described.

[0078] Fig. 7 is a schematic side view of a substrate processing apparatus 1 according to a second embodiment. Fig. 8 is a cross-sectional view of a first nozzle 141 according to the second embodiment, taken along a plane perpendicular to the longitudinal direction. Fig. 9 is a diagram showing an example of a cross-sectional shape taken along line IX-IX in Fig. 8. Fig. 10 is a diagram showing an example of a cross-sectional shape taken along line XX in Fig. 8.

[0079] 7 and 8, the substrate processing apparatus 1 may be configured to include a fluid mixing section 49 that mixes vapor, SPM liquid, and N2 gas inside the first nozzle 141. The fluid mixing section 49 may have the same configuration as the second mixing section 44 according to the first embodiment described above.

[0080] 8, a first nozzle 141 according to the second embodiment includes a nozzle body 41 (see FIGS. 9 and 10), a first distribution channel 42 (an example of a treatment liquid distribution channel), a third distribution channel 43A (an example of a fluid distribution channel), and a fourth distribution channel 43B (an example of a gas distribution channel). The first nozzle 141 also includes a plurality of first outlets 45 and a plurality of first discharge channels 46 (see FIG. 4), a plurality of third outlets 47A and a plurality of third discharge channels 48A (see FIG. 9), and a plurality of fourth outlets 47B and a plurality of fourth discharge channels 48B (see FIG. 10). The first distribution channel 42, the first outlets 45, and the first discharge channels 46 have been described above, and therefore will not be described in detail here.

[0081] The third distribution path 43A and the fourth distribution path 43B are provided inside the nozzle main body 41. As shown in Figures 9 and 10, the third distribution path 43A and the fourth distribution path 43B extend along the longitudinal direction of the nozzle main body 41. As shown in Figure 8, the third distribution path 43A is disposed on the left side of the first distribution path 42. The fourth distribution path 43B is disposed on the right side of the first distribution path 42. The third distribution path 43A and the fourth distribution path 43B may be configured to be disposed on opposite left and right sides of each other.

[0082] The third distribution path 43A is connected to the vapor supply unit 201 via the vapor supply path 210. The third distribution path 43A distributes the vapor supplied from the vapor supply path 210 to the entire discharge area R of the first nozzle 141.

[0083] The fourth distribution path 43B is connected to the N2 gas supply unit 203 via the N2 gas supply path 230 and the N2 gas flow rate adjuster 231. The fourth distribution path 43B distributes the N2 gas supplied from the N2 gas supply path 230 to the entire discharge region R of the first nozzle 141.

[0084] The plurality of third discharge ports 47A and the plurality of third discharge paths 48A are provided along the longitudinal direction of the first nozzle 141 (see FIG. 9). Each third discharge port 47A is connected to the third distribution path 43A via the third discharge path 48A. The plurality of third discharge ports 47A are arranged over the entire area from one end to the other end in the longitudinal direction of a fluid mixing section 49, which will be described later.

[0085] The plurality of fourth outlet ports 47B and the plurality of fourth outlet paths 48B are provided along the longitudinal direction of the first nozzle 141 (see FIG. 10). Each fourth outlet port 47B is connected to the fourth distribution path 43B via the fourth outlet path 48B. The plurality of fourth outlet ports 47B are arranged over the entire area from one end to the other end in the longitudinal direction of a fluid mixing section 49, which will be described later.

[0086] The vapor supplied from the vapor supply unit 201 to the third distribution path 43A is distributed from the third distribution path 43A to multiple third discharge paths 48A and discharged from each third discharge port 47A to a fluid mixing unit 49 described later. The N2 gas supplied from the N2 gas supply unit 203 to the fourth distribution path 43B is distributed from the fourth distribution path 43B to multiple fourth discharge paths 48B and discharged from each fourth discharge port 47B to the fluid mixing unit 49 described later.

[0087] The fluid mixing section 49 is provided below the third distribution path 43A and the fourth distribution path 43B. The third discharge ports 47A and the fourth discharge ports 47B open to the upper end surface of the fluid mixing section 49. As shown in FIGS. 8 to 10, the fluid mixing section 49 is a mixing space provided in the lower part of the nozzle body 41, and mixes the vapor, SPM liquid, and N2 gas. The fluid mixing section 49 extends along the vertical direction (here, the Z-axis direction). The lower end of the fluid mixing section 49 is open.

[0088] The SPM liquid ejected from the first outlet 45, the vapor ejected from the third outlet 47A, and the N2 gas ejected from the fourth outlet 47B are mixed near the upper end, which is the inlet of the fluid mixing section 49, to become a second mixed fluid, which is ejected toward the wafer W from the lower end, which is the outlet of the fluid mixing section 49.

[0089] In this way, the vapor and N 2 gas may be mixed inside the first nozzle 141.

[0090] Third Embodiment The third embodiment will describe another example of mixing vapor, N2 gas, and SPM liquid inside the first nozzle 141. Specifically, the third embodiment will describe an example of a first nozzle 141 in which the discharge region R of the first nozzle 141 is divided into a plurality of individual discharge regions, and the flow rate of N2 gas can be adjusted for each of these individual discharge regions.

[0091] Fig. 11 is a schematic cross-sectional view of a first nozzle 141 according to the third embodiment. The cross-sectional view shown in Fig. 11 corresponds to a cross-sectional view of the first nozzle 141 according to the third embodiment taken along line XX shown in Fig. 8.

[0092] As shown in FIG. 11, the substrate processing apparatus 1 may include a plurality of individual N2 gas supply paths 230a and 230b and a plurality of individual N2 gas flow rate adjusters 231a and 231b.

[0093] The plurality of individual N2 gas supply paths 230a and 203b individually supply the N2 gas supplied from the N2 gas supply unit 203 to the first nozzle 141.

[0094] The plurality of individual N2 gas flow rate adjusters 231a, 231b are provided corresponding to the plurality of individual N2 gas supply paths 230a, 230b, and adjust the flow rate of N2 gas supplied from the N2 gas supply unit 203 to the first nozzle 141. Specifically, the individual N2 gas flow rate adjuster 231a is provided in the individual N2 gas supply path 230a, and adjusts the flow rate of N2 gas flowing through the individual N2 gas supply path 230a. The individual N2 gas flow rate adjuster 231b is provided in the individual N2 gas supply path 230b, and adjusts the flow rate of N2 gas flowing through the individual N2 gas supply path 230b.

[0095] As shown in FIG. 11 , the fourth distribution path 43B of the first nozzle 141 is divided into a plurality of individual N2 gas distribution paths 43a, 43b (examples of individual gas distribution paths). The plurality of individual N2 gas distribution paths 43a, 43b correspond to a plurality of individual discharge regions Ra, Rb. The plurality of individual discharge regions Ra, Rb are regions obtained by dividing the discharge region R of the first nozzle 141 horizontally, specifically along the longitudinal direction of the first nozzle 141. Specifically, the individual discharge region Ra corresponds to the central region of the wafer W, and the individual discharge region Rb corresponds to the peripheral region of the wafer W. The central region of the wafer W is a region within the in-plane region of the wafer W that includes the center of the wafer W. The peripheral region of the wafer W is a region located more outer circumferentially than the central region within the in-plane region of the wafer W and that includes at least the outer periphery of the wafer W.

[0096] The individual N2 gas distribution path 43a corresponds to the individual discharge area Ra. The individual N2 gas distribution path 43a is connected to the individual N2 gas supply path 230a, and distributes the N2 gas supplied from the N2 gas supply unit 203 via the individual N2 gas supply path 230a and the individual N2 gas flow rate adjuster 231a to the entire area of ​​the individual discharge area Ra.

[0097] The individual N2 gas distribution path 43b corresponds to the individual discharge region Rb. The individual N2 gas distribution path 43b is connected to the individual N2 gas supply path 230b, and distributes the N2 gas supplied from the N2 gas supply unit 203 via the individual N2 gas supply path 230b and the individual N2 gas flow rate adjuster 231b throughout the individual discharge region Rb.

[0098] The N2 gas distributed to the individual N2 gas distribution paths 43a, 43b is further distributed from the individual N2 gas distribution paths 43a, 43b to a plurality of fourth discharge paths 48B and discharged to the fluid mixing section 49 from a plurality of fourth discharge ports 47B.

[0099] The SPM liquid discharged from the first discharge port 45, the vapor discharged from the third discharge port 47A, and the N2 gas discharged from the fourth discharge port 47B are mixed near the upper end, which is the inlet of the fluid mixing section 49. As a result, a second mixed fluid, which is a mixed fluid containing the SPM liquid, the vapor, and the N2 gas, is generated in the fluid mixing section 49. The generated second mixed fluid is discharged from the lower end, which is the outlet of the fluid mixing section 49, toward the wafer W.

[0100] The plurality of individual N2 gas flow rate adjusters 231a, 231b adjust the flow rate of N2 gas supplied from the N2 gas supply unit 203 to the individual N2 gas distribution paths 43a, 43b under the control of the control unit 71. In this manner, the substrate processing apparatus 1 according to the third embodiment can adjust the flow rate of N2 gas for each of the plurality of individual discharge regions Ra, Rb. That is, the temperature of the second mixed fluid discharged onto the surface of the wafer W can be controlled for each of the plurality of individual discharge regions Ra, Rb. This improves the temperature uniformity within the surface of the wafer W.

[0101] For example, the control unit 71 may control the individual N2 gas flow rate adjusters 231a and 231b so that the flow rate of N2 gas supplied to the individual discharge region Rb corresponding to the outer periphery of the wafer W is smaller than the flow rate of N2 gas supplied to the individual discharge region Ra corresponding to the central region of the wafer W. During the mixed fluid supply process in which the second mixed fluid is discharged onto the surface of the wafer W, the wafer W rotates, and the discharged second mixed fluid is dispersed by centrifugal force. The temperature of the wafer W is more likely to decrease in the outer periphery of the wafer W than in the central region of the wafer W. Therefore, the control unit 71 may control the individual N2 gas flow rate adjusters 231a and 231b so that the flow rate of N2 gas supplied to the individual discharge region Rb is smaller than the flow rate of N2 gas supplied to the individual discharge region Ra. This increases the temperature of the second mixed fluid discharged onto the outer periphery of the wafer W, thereby favorably improving the temperature uniformity across the wafer W.

[0102] In FIG. 11, the numbers of individual N2 gas supply paths, individual N2 gas flow rate adjusters, and individual N2 gas distribution paths are not limited to two, but may be three or more.

[0103] <Fourth embodiment> The fourth embodiment will describe another example of mixing vapor, N2 gas, and SPM liquid inside the first nozzle 141. Specifically, the fourth embodiment will describe an example of a first nozzle 141 that includes a first mixing section 301 that mixes vapor and N2 gas, and a second mixing section 44 that mixes the first mixed fluid mixed in the first mixing section 301 with the SPM liquid.

[0104] Fig. 12 is a cross-sectional view of a first nozzle 141 according to the fourth embodiment cut along a plane perpendicular to the longitudinal direction. Fig. 13 is a schematic plan view of a first nozzle 141 according to the fourth embodiment viewed from below. Fig. 14 is a diagram showing an example of a cross-sectional shape taken along the arrows XIV-XIV shown in Fig. 12. Fig. 15 is a diagram showing an example of a cross-sectional shape taken along the arrows XV-XV shown in Fig. 12. Fig. 16 is a diagram showing an example of a cross-sectional shape taken along the arrows XVI-XVI shown in Fig. 12.

[0105] 14 to 16, the first nozzle 141 is a long nozzle. For example, the first nozzle 141 includes a first distribution path 42, a third distribution path 43A, and a fourth distribution path 43B that extend along the longitudinal direction of the first nozzle 141.

[0106] 12, the first nozzle 141 may include therein a first mixing section 301 and a second mixing section 44. As shown in Fig. 15, the first mixing section 301 and the second mixing section 44 are disposed over the entire area of ​​the first nozzle 141 from one end to the other end in the longitudinal direction.

[0107] In the fourth embodiment, the first mixing section 301 may have an annular space formed around the first discharge path 46 so as to surround the first discharge path 46. The third discharge port 47A and the fourth discharge port 47B open to a side surface of the first mixing section 301.

[0108] The second mixing section 44 is disposed downstream of the first mixing section 301. The second mixing section 44 is disposed coaxially with the first discharge passage 46, and is in communication with the first discharge passage 46 and the first mixing section 301. The second mixing section 44 is preferably formed linearly, and the cross-sectional area (diameter) of the second mixing section 44 is preferably constant from the inlet to the outlet, and the cross-sectional shape of the first discharge passage 46 is preferably circular or elliptical, for example.

[0109] The first mixing section 301 is formed in a cylindrical shape with an annular cross section. For example, the first mixing section 301 has an annular section 311 and a tapered section 312 that decreases in diameter as it extends downward. The tapered section 312 is formed on the downstream side of the annular section 311, and the outlet of the tapered section 312 opens in an annular shape between the outlet of the first discharge passage 46 and the inlet of the second mixing section 44.

[0110] In the first nozzle 141, the vapor discharged from the third outlet 47A and the N2 gas discharged from the fourth outlet 47B are mixed in the first mixing section 301. Thereafter, the mixed first mixed fluid and the SPM liquid discharged from the first outlet 45 are mixed in the upper part of the second mixing section 44, and the mixed second mixed fluid is discharged from the lower end, which is the outlet of the second mixing section 44, toward the wafer W.

[0111] As shown in FIG. 13 , the first discharge port 45 is arranged coaxially with the first mixing section 301 and the second mixing section 44 in a plan view. The first discharge port 45 discharges the SPM liquid in a direction along the central axis of the second mixing section 44 (i.e., the Z-axis direction). The third discharge port 47A is arranged toward a position offset from the central axis of the first mixing section 301 in a plan view and discharges the vapor toward the position offset from the central axis of the first mixing section 301. Similarly, the fourth discharge port 47B is arranged toward a position offset from the central axis of the first mixing section 301 in a plan view and discharges the N2 gas toward the position offset from the central axis of the first mixing section 301. As a result, the vapor and N2 gas that collide with the inner surface of the first mixing section 301 are mixed with the SPM liquid discharged from the first discharge port 45 while forming a swirling flow of the first mixed fluid inside the first mixing section 301 and the second mixing section 44. In order to form a swirling flow of vapor, N2 gas, and SPM liquid within the second mixing section 44, the vapor discharged from the third discharge port 47A and the N2 gas discharged from the fourth discharge port 47B simply need to flow along the inner surface of the second mixing section 44.

[0112] As shown in FIG. 12 , a jetting port 441 may be provided at the tip of each second mixing section 44. In this case, the jetting port 441 may be formed in the shape of an orifice having a smaller cross-sectional area than the second mixing section 44. If there is no orifice-shaped jetting port 441 having a smaller cross-sectional area than the second mixing section 44, droplets that grow from fine particles along the inner wall of the second mixing section 44 will be ejected as they are. The cross-sectional area of ​​the jetting port 441 is preferably constant from the inlet to the outlet, and the cross-sectional shape of the jetting port 441 is preferably circular or elliptical, for example. The droplets that pass through the second mixing section 44 are atomized again while passing through the jetting port 441 and then ejected. Therefore, even if the droplets grow large while moving along the inner wall of the second mixing section 44, passing the jetting port 441 allows the droplets to be atomized into sufficiently small particle sizes and then ejected.

[0113] In FIG. 12, the first distribution path 42, the third distribution path 43A, and the fourth distribution path 43B have a rectangular cross section, but the cross section may not be rectangular but may be circular as shown in FIG.

[0114] Fifth Embodiment In the above-described first to fourth embodiments, examples have been described in which the first nozzle 141 is a long nozzle. In the fifth embodiment, an example will be described in which the first nozzle 141 is a nozzle that discharges the second mixed fluid from a single discharge port. Fig. 17 is a schematic side view of a substrate processing apparatus according to the fifth embodiment.

[0115] 17, the substrate processing apparatus 1 according to the fifth embodiment may include a first nozzle 141 that discharges the second mixed fluid from a single outlet that is, for example, circular in plan view. As such a first nozzle 141, for example, an internal mixing nozzle that mixes the vapor supplied from the vapor supply unit 201, the SPM liquid supplied from the SPM supply unit 202, and the N2 gas supplied from the N2 gas supply unit 203 inside the first nozzle 141 can be used.

[0116] The first nozzle 141 can be moved horizontally between the central portion and the outer periphery of the wafer W by a first swivel lift mechanism 143 (an example of a moving part) included in the first supply mechanism 104 (see FIG. 1).

[0117] The vapor supply unit 201 is connected to the first nozzle 141 via a vapor supply path 210. The SPM supply unit 202 is connected to the first nozzle 141 via an SPM supply path 220. In addition, the N2 gas supply unit 203 is connected to the first nozzle 141 via an N2 gas supply path 230 and an N2 gas flow rate adjustment unit 231.

[0118] In the mixed fluid supply process, the control unit 71 (see FIG. 1) controls the first swiveling lifting mechanism 143 to move the first nozzle 141 in the horizontal direction while discharging the second mixed fluid from the first nozzle 141, thereby enabling the second mixed fluid to be discharged onto the entire surface of the wafer W. At this time, the control unit 71 controls the N2 gas flow rate adjusting unit 231 in accordance with the horizontal position of the first nozzle 141 so that the flow rate of the N2 gas supplied to the first nozzle 141 becomes a given flow rate.

[0119] Specifically, for example, the control unit 71 may control the N2 gas flow rate adjuster 231 so that the flow rate of N2 gas supplied to the first nozzle 141 at the outer periphery of the wafer W is smaller than the flow rate of N2 gas supplied to the first nozzle 141 at the center of the wafer W. In this case, the temperature of the second mixed fluid to be discharged can be increased at the outer periphery of the wafer W where a decrease in temperature is likely to occur, thereby suitably improving the temperature uniformity within the surface of the wafer W.

[0120] Sixth Embodiment Conventionally, long nozzles that extend linearly in the horizontal direction have been known as nozzles used in substrate processing. However, with conventional long nozzles, when a fluid mixture is discharged onto a rotating substrate during substrate processing, a temperature difference is likely to occur between the center and the periphery of the substrate. Therefore, a technology that optimizes substrate processing by using a long nozzle that can adjust the temperature of the fluid mixture discharged along the longitudinal direction of the nozzle is expected.

[0121] In the sixth embodiment, an example of a first nozzle 141 that can adjust the temperature of the mixed fluid to be discharged along the longitudinal direction will be described. In addition, in the sixth embodiment, a mixed fluid obtained by mixing vapor and SPM liquid (a third mixed fluid to be described later) will be described as an example of the mixed fluid.

[0122] Fig. 18 is a cross-sectional view of a first nozzle 141 according to the sixth embodiment taken along a plane perpendicular to the longitudinal direction. Fig. 19 is a diagram showing an example of the cross-sectional shape taken along the arrows XIX-XIX shown in Fig. 18. Fig. 20 is a diagram showing an example of the cross-sectional shape taken along the arrows XX-XX shown in Fig. 18.

[0123] 18 to 20, a first nozzle 141 according to the sixth embodiment is a long nozzle that extends linearly in the horizontal direction. The first nozzle 141 includes a plurality of introduction spaces 63 and a plurality of third mixing sections 64 therein. The first nozzle 141 also includes a plurality of first flow path sections 61, 61A, a plurality of second flow path sections 62, and a lid 65.

[0124] 18, in the first nozzle 141 according to the sixth embodiment, the third distribution path 43A is disposed to the side (here, the left side) of the first distribution path 42. The third distribution path 43A may be disposed on either the left or right side of the first distribution path 42. As shown in FIG. 19, the third distribution path 43A extends along the longitudinal direction of the nozzle body 41.

[0125] The plurality of second flow path sections 62 connect the third distribution path 43A and the introduction space 63. The plurality of second flow path sections 62 are provided along the longitudinal direction of the first nozzle 141. Specifically, the plurality of second flow path sections 62 are arranged over the entire area from one end to the other end in the longitudinal direction of a third mixing section 64, which will be described later. A third discharge port 47A is located at the tip of each second flow path section 62, and the third discharge port 47A opens to a side surface of the introduction space 63, which will be described later.

[0126] The vapor supplied from the vapor supply section 201 to the third distribution path 43A is distributed from the third distribution path 43A to multiple second flow path sections 62 and discharged from the third discharge outlet 47A located at the tip of each second flow path section 62 into the introduction space 63 described later.

[0127] 20, the plurality of first flow path sections 61, 61A are provided along the longitudinal direction of the first nozzle 141. Specifically, the plurality of first flow path sections 61, 61A are arranged over the entire area from one end to the other end in the longitudinal direction of a third mixing section 64, which will be described later.

[0128] The first flow path section 61 has one flow path 611 therein. The first flow path section 61 also has one first discharge port 45 at its lower end, which is in communication with the flow path 611. The flow path 611 extends linearly along the axial direction of the first flow path section 61. The flow path 611 connects the first distribution path 42 and the third mixing section 64.

[0129] The first flow path section 61A has a plurality of (here, two) flow paths 611A therein. The first flow path section 61A also has a plurality of (here, two) first discharge ports 45A at its lower end, which are in communication with the respective flow paths 611A. The flow paths 611A extend linearly along the axial direction of the first flow path section 61A. The flow paths 611A connect the first distribution path 42 and the third mixing section 64.

[0130] The SPM liquid supplied from the SPM supply section 202 to the first distribution path 42 is distributed from the first distribution path 42 to multiple first flow path sections 61, 61A, and is ejected into the introduction space 63 described later from multiple first outlets 45, 45A located at the lower end of each first flow path section 61, 61A.

[0131] The introduction space 63 is an annular space portion formed around the first flow path portion 61 so as to surround the first flow path portion 61. The third discharge port 47A opens to the side surface of the introduction space 63.

[0132] The third mixing section 64 is disposed coaxially with the first flow path section 61 or the first flow path section 61A, and is in communication with the first flow path section 61 or the first flow path section 61A and the introduction space 63. The dashed line XX in Fig. 18 (hereinafter referred to as "axis XX") indicates an axis that passes through the center of the ejection port 441 and extends in the axial direction of the first flow path sections 61, 61A. The third mixing section 64 is preferably formed linearly, and the cross-sectional area (diameter) of the third mixing section 64 is preferably constant from the inlet to the outlet, and the cross-sectional shape of the first flow path sections 61, 61A is preferably circular or elliptical, for example.

[0133] FIG. 21 is a schematic plan view of the first flow path section 61A shown in FIG. 18 as viewed from below. As shown in FIG. 21, the first flow path section 61A includes a plurality of first discharge ports 45A, each having a circular shape, at the lower end of the first flow path section 61A. The plurality of first discharge ports 45A are provided corresponding to the plurality of flow paths 611A located inside the first flow path section 61A, and discharge the SPM liquid supplied via the flow paths 611A into the third mixing section 64. Although four first discharge ports 45A are shown in FIG. 21, the number of first discharge ports 45A is not limited to four. The number of first discharge ports 45A may be one, or may be two or more.

[0134] An annular portion 311 and a tapered portion 312 that decreases in diameter downward are formed in the introduction space 63. The tapered portion 312 is formed on the downstream side of the annular portion 311, and the outlet of the tapered portion 312 opens in an annular shape between the outlet of the first flow path portion 61 or the first flow path portion 61A and the inlet of the third mixing section 64.

[0135] In the first nozzle 141 according to the sixth embodiment, vapor is discharged from the third discharge port 47A into the introduction space 63. The vapor discharged into the introduction space 63 flows downstream while forming a swirling flow inside the introduction space 63. The vapor and the SPM liquid discharged from the first discharge port 45 or the first discharge port 45A are then mixed in the upper part of the third mixing section 64, and the mixed fluid of the vapor and the SPM liquid thus produced (hereinafter referred to as the "third mixed fluid") is sprayed toward the surface of the wafer W from the spray ports 441 located at the lower end of each third mixing section 64.

[0136] As described above, the first flow path sections 61, 61A and the third mixing section 64 are arranged coaxially. Specifically, the centers of the first flow path sections 61, 61A and the center of the third mixing section 64 are arranged on the axis XX that passes through the center of the ejection port 441. The first discharge port 45 located at the lower end of the first flow path section 61 is also arranged on the axis XX. Meanwhile, the multiple first discharge ports 45A located at the lower end of the first flow path section 61A are arranged at positions shifted from the axis XX that passes through the center of the ejection port 441.

[0137] If the center of the first discharge port 45A is positioned coaxially with the center of the ejection port 441, there is a risk that the SPM liquid ejected from the first discharge port 45A will be ejected from the ejection port 441 without being sufficiently mixed with the vapor. In contrast, by positioning the center of the first discharge port 45A offset from the center of the ejection port 441, the SPM liquid and vapor are more likely to mix inside the third mixing section 64. Therefore, the responsiveness of the temperature adjustment of the ejected third mixed fluid can be improved.

[0138] The lid body 65 is provided on the upper part of the nozzle body 41. As shown in Figure 20, the lid body 65 extends along the longitudinal direction of the nozzle body 41.

[0139] The lid body 65 is configured to be detachable from the nozzle body 41. In this case, by removing the lid body 65 from the nozzle body 41, the inside of the nozzle body 41 can be accessed, and the first flow path portions 61, 61A located inside the nozzle body 41 can be replaced from the top of the nozzle body 41.

[0140] In this way, the plurality of first flow path sections 61, 61A may be detachable from each introduction space 63. This makes it possible to adjust the discharge temperature of the third mixed fluid in the horizontal direction of the first nozzle 141 (the longitudinal direction of the first nozzle 141) by changing only the shape of the first flow path sections 61, 61A. Therefore, it is possible to reduce the cost of equipment required to improve the temperature uniformity within the surface of the wafer W.

[0141] The lid body 65 may be fixed to the nozzle body 41 by a fixing mechanism (not shown). The fixing mechanism (not shown) may be, for example, a mechanism for fixing the nozzle body 41 and the lid body 65 with bolts. When the lid body 65 is attached to the nozzle body 41, it may fix the plurality of first flow path portions 61, 61A by pressing the plurality of first flow path portions 61 from above.

[0142] As described above, the first nozzle 141 according to the sixth embodiment includes at least one or more first flow path sections 61A that differ from the others in the number of flow paths located therein. In the example shown in Fig. 20, the first nozzle 141 includes two first flow path sections 61 each having one flow path 611 located therein, and two first flow path sections 61A each having two flow paths 611A located therein. In other words, the first nozzle 141 includes two types of first flow path sections 61, 61A that differ in the number of flow paths.

[0143] According to the first nozzle 141 having such a configuration, the flow rate of the SPM liquid supplied to the third mixing section 64 can be adjusted depending on the number of flow paths provided in the first flow path sections 61, 61A, and therefore the temperature of the third mixed fluid ejected from the ejection port 441 to each third mixing section 64 can be adjusted. Therefore, the temperature uniformity within the surface of the wafer W can be improved.

[0144] 20 , the first nozzle 141 may be configured such that a plurality of first flow path portions 61A are arranged in an outer peripheral region of the first nozzle 141 corresponding to the outer peripheral portion of the wafer W, and a plurality of first flow path portions 61 are arranged in a central region corresponding to the central portion of the wafer W. In this configuration, the flow rate of the third mixed fluid discharged from the ejection port 441 to the outer peripheral portion of the wafer W is greater than the flow rate of the mixed fluid discharged from the ejection port 441 to the central portion of the wafer W. As a result, the temperature of the third mixed fluid discharged from the ejection port 441 can be increased in the outer peripheral portion of the wafer W, where a decrease in temperature is likely to occur. Therefore, the temperature uniformity within the surface of the wafer W can be suitably improved.

[0145] Seventh Embodiment In the sixth embodiment described above, an example was described in which the multiple flow paths 611A extend parallel to the axis of the first flow path section 61A, specifically, extend in the vertical direction. In the seventh embodiment, an example of a first nozzle 141 will be described in which, instead of such a first flow path section 61A, the multiple flow paths are provided with a first flow path section in which the multiple flow paths extend in a direction inclined with respect to the vertical direction. Fig. 22 is an enlarged view of a cross section of the first nozzle according to the seventh embodiment, cut along a plane perpendicular to the short side direction.

[0146] 22, the first nozzle 141 may include a first flow path section 61B instead of the first flow path section 61A according to the sixth embodiment. The first flow path section 61B has a plurality of flow paths 611B therein that extend linearly in a direction inclined with respect to the axial direction (vertical direction). The first flow path section 61B also has a plurality of first discharge ports 45B that communicate with each of the plurality of flow paths 611B. Similar to the first discharge port 45A described above, the plurality of first discharge ports 45B are arranged at positions offset from the axis passing through the center of the ejection port 441.

[0147] In the seventh embodiment, the SPM liquid is discharged obliquely from the first discharge port 45B into the third mixing section 64. This makes it possible to lengthen the residence time of the SPM liquid in the third mixing section 64 compared to when the SPM liquid is discharged vertically. Therefore, the first nozzle 141 according to the seventh embodiment can more suitably improve the mixability of the SPM liquid with the vapor forming a swirling flow inside the third mixing section 64.

[0148] The first nozzle 141 according to the seventh embodiment may include a plurality of first flow path sections 61 and a plurality of first flow path sections 61B. In this case, the first nozzle 141 may be configured such that a plurality of first flow path sections 61B are arranged in an outer peripheral region of the first nozzle 141 corresponding to the outer peripheral portion of the wafer W, and a plurality of first flow path sections 61 are arranged in a central region corresponding to the central portion of the wafer W. The first flow path section 61B has a higher miscibility of the SPM liquid with the vapor than the first flow path section 61. Therefore, the temperature of the third mixed fluid discharged from the ejection port 441 via the first flow path section 61B is higher than the temperature of the third mixed fluid discharged from the ejection port 441 via the first flow path section 61. Therefore, with this configuration, the temperature of the third mixed fluid discharged to the outer peripheral portion of the wafer W can be made higher than the temperature of the mixed fluid discharged to the central portion of the wafer W. This suppresses a decrease in the temperature of the third mixed fluid at the outer peripheral portion of the wafer W, thereby improving the temperature uniformity within the surface of the wafer W.

[0149] The number of flow paths 611B in the first flow path section 61B does not necessarily have to be plural. That is, the first flow path section 61B may be configured to include one flow path 611B that extends obliquely.

[0150] The first discharge port 45B may be located on a side surface of the first flow path portion 61B instead of at the lower end of the first flow path portion 61B. In this case, the SPM liquid is discharged from the first discharge port 45B into the introduction space 63, which can further improve the mixability with the vapor.

[0151] Eighth Embodiment In the eighth embodiment, an example will be described in which a first nozzle 141 has a plurality of types of first flow path portions with different flow path diameters. Fig. 23 is a cross-sectional view of a first nozzle 141 according to the eighth embodiment, taken along a plane perpendicular to the longitudinal direction.

[0152] As shown in FIG. 23, a first nozzle 141 according to the eighth embodiment may include two types of first flow path portions: a first flow path portion 61 and a first flow path portion 61C.

[0153] The first flow path section 61 includes one flow path 611, and the first flow path section 61C similarly includes one flow path 611C. Both the flow paths 611, 611C extend along the axis of the first flow path sections 61, 61C, in other words, extend along the vertical direction.

[0154] The flow path diameter D1 of the flow path 611C of the first flow path section 61C is larger than the flow path diameter D2 of the flow path 611 of the first flow path section 61.

[0155] In this way, the first nozzle 141 may be configured to include a first flow path section 61C having a flow path 611C with a flow path diameter D1 larger than the flow path diameter D2 of the flow path 611 of the other first flow path sections 61. With the first nozzle 141 having such a configuration, the flow rate of the SPM liquid supplied to the third mixing section 64 can be adjusted by the flow path diameters of the flow paths 611, 611C included in the first flow path sections 61, 61C. That is, with the first nozzle 141 according to the eighth embodiment, the temperature of the third mixed fluid ejected from the ejection port 441 can be adjusted by the flow path diameters of the flow paths 611, 611C included in the first flow path sections 61, 61C. Therefore, the temperature uniformity within the surface of the wafer W can be improved.

[0156] 23 , the first nozzle 141 may be configured such that a plurality of first flow path portions 61C are arranged in an outer peripheral region of the first nozzle 141 corresponding to the outer peripheral portion of the wafer W, and a plurality of first flow path portions 61 are arranged in a central region corresponding to the central portion of the wafer W. With this configuration, the temperature of the third mixed fluid discharged from the ejection port 411 can be increased in the outer peripheral portion of the wafer W where a drop in temperature is likely to occur. Therefore, the temperature uniformity within the surface of the wafer W can be suitably improved.

[0157] Ninth Embodiment In the sixth to eighth embodiments described above, a case has been described in which a plurality of ejection ports 441 are arranged at equal intervals over the entire longitudinal area of ​​the first nozzle 141. In other words, a case has been described in which a plurality of first flow path sections are arranged at equal intervals over the entire longitudinal area of ​​the first nozzle 141. In the ninth embodiment, an example will be described in which a plurality of first flow path sections are arranged at different intervals. Fig. 24 is a cross-sectional view of a first nozzle 141 according to the ninth embodiment, cut along a plane perpendicular to the longitudinal direction.

[0158] 24, the first nozzles 141 may be arranged such that the intervals between each first flow path section 61 and adjacent first flow path sections 61 are different from each other. In such a case, the first nozzles 141 may be configured such that the plurality of first flow path sections 61 are arranged such that the intervals between adjacent first flow path sections are different at at least one location. With the first nozzle 141 having such a configuration, the heating effect in the horizontal direction of the first nozzle 141 can be adjusted by adjusting the discharge amount of the third mixed fluid in the horizontal direction of the first nozzle 141 (the longitudinal direction of the first nozzle 141). Therefore, the temperature uniformity in the surface of the wafer W can be improved.

[0159] 24, when the distances between each first flow path section 61 and its adjacent first flow path section 61 are L1 to L3 in order from the side closest to the center of the wafer W, the plurality of first flow path sections 61 may be arranged so that L1>L2>L3 holds. With this configuration, the discharge amount of the third mixed fluid can be relatively increased in the outer periphery of the wafer W where a drop in temperature is likely to occur, and therefore the temperature uniformity within the surface of the wafer W can be suitably improved.

[0160] (Other embodiments) In the sixth to ninth embodiments described above, examples have been described in which the third mixed fluid (a mixed fluid of SPM liquid and vapor) is ejected from the first nozzle 141. However, the first nozzle 141 according to the sixth to ninth embodiments may be configured to eject the second mixed fluid (a mixed fluid of SPM liquid, vapor, and N2 gas) like the first nozzle 141 according to the first to fifth embodiments.

[0161] In the sixth to ninth embodiments described above, an example has been described in which the third mixed fluid is ejected from all of the ejection ports 441 of the first nozzle 141. However, the first nozzle 141 may be configured to eject the second mixed fluid described in the first to fifth embodiments from some of the ejection ports 441 of the plurality of ejection ports 441.

[0162] As described above, the second mixed fluid mixed with N2 gas has a lower temperature than the third mixed fluid. Therefore, for example, the first nozzle 141 may be configured to eject the third mixed fluid from a plurality of ejection ports 441 located in an outer peripheral region of the first nozzle 141 corresponding to the outer periphery of the wafer W, and to eject the second mixed fluid from a plurality of ejection ports 441 located in a central region corresponding to the central region of the wafer W. With this configuration, the temperature of the mixed fluid ejected from the ejection ports 441 can be increased in the outer peripheral region of the wafer W, where a drop in temperature is likely to occur. Therefore, the temperature uniformity within the surface of the wafer W can be suitably improved.

[0163] In the above-described embodiment, N2 gas is used as an example of the inert gas to be mixed with the SPM liquid and vapor, but the inert gas may be other inert gases such as helium gas or argon gas.

[0164] The present disclosure has been described in detail above, but the present disclosure is not limited to the above-described embodiments, and various modifications, improvements, etc. are possible within the scope that does not deviate from the gist of the present disclosure.

[0165] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0166] The present technology can also be configured as follows. (1) a substrate holder that rotatably holds the substrate; a nozzle for discharging onto the substrate a mixed fluid obtained by mixing a fluid containing vapor or mist of pure water, a processing liquid containing at least sulfuric acid, and an inert gas; a fluid supply unit that supplies the fluid to the nozzle; a processing liquid supply unit that supplies the processing liquid to the nozzle; a gas supply unit that supplies the inert gas to the nozzle; a gas flow rate adjusting unit that adjusts the flow rate of the inert gas supplied from the gas supply unit to the nozzle; A substrate processing apparatus comprising: (2) a control unit for controlling the gas flow rate adjusting unit, The substrate processing apparatus described in (1), wherein the control unit controls the gas flow rate adjustment unit to adjust the flow rate of the inert gas supplied to the nozzle, thereby performing a temperature adjustment process to adjust the temperature of the mixed fluid ejected from the nozzle. (3) The substrate processing apparatus according to (2), wherein the flow rates of the fluid supplied from the fluid supply unit and the processing liquid supplied from the processing liquid supply unit are constant during the temperature adjustment process. (4) a moving unit that moves the nozzle in a horizontal direction, The substrate processing apparatus according to (2) or (3), wherein the control unit controls the moving unit to move the nozzle during the temperature adjustment process, and adjusts the flow rate of the inert gas according to the horizontal position of the nozzle. (5) The substrate processing apparatus described in (4), wherein the control unit controls the gas flow rate adjustment unit to adjust the flow rate of the inert gas during the temperature adjustment process so that the flow rate of the inert gas when the nozzle is located at the outer periphery of the substrate is less than the flow rate of the inert gas when the nozzle is located at the center of the substrate. (6) the nozzle is an elongated nozzle extending linearly along a horizontal direction, and the mixed fluid is discharged from a discharge region extending along the horizontal direction; the gas supply unit includes a plurality of individual gas supply paths that are arranged along the horizontal direction and that individually supply the inert gas to the nozzles; The substrate processing apparatus according to any one of (1) to (3), wherein the gas flow rate adjusting unit includes a plurality of individual gas flow rate adjusting units provided corresponding to the plurality of individual gas supply paths and adjusting the flow rate of the inert gas supplied from the individual gas supply units to the nozzle. (7) The nozzle is a fluid distribution channel connected to the fluid supply unit and distributing the fluid throughout the ejection area; a treatment liquid distribution channel connected to the treatment liquid supply unit and distributing the treatment liquid over the entire discharge area; a plurality of individual gas distribution paths that are provided corresponding to a plurality of individual discharge regions that divide the discharge region along the horizontal direction, and that distribute the inert gas supplied from the individual gas supply paths to the individual discharge regions; The substrate processing apparatus according to (6) above, comprising: (8) The plurality of individual discharge regions are a central ejection region corresponding to a central region located at a central portion of the substrate; a peripheral discharge region corresponding to a peripheral region located on the peripheral portion of the substrate; Including, The substrate processing apparatus according to (7), wherein a flow rate of the inert gas supplied to the outer peripheral discharge region is lower than a flow rate of the inert gas supplied to the central discharge region. (9) a first mixing section located upstream of the nozzle and configured to mix the fluid supplied from the fluid supply section and the inert gas supplied from the gas supply section; a second mixing section located inside the nozzle and configured to mix the fluid and the inert gas supplied in a mixed state from the first mixing section with the processing liquid supplied from the processing liquid supply section; The substrate processing apparatus according to any one of (1) to (8) above, comprising: (10) The substrate processing apparatus according to any one of (1) to (8), further comprising a fluid mixing section located inside the nozzle, which mixes the fluid supplied from the fluid supply section, the processing liquid supplied from the processing liquid supply section, and the inert gas supplied from the gas supply section. (11) a second nozzle separate from the first nozzle; a rinse liquid supply unit that supplies a rinse liquid to the second nozzle; Control unit and Equipped with The control unit a mixed fluid supply process of discharging the mixed fluid from the first nozzle onto the substrate; a rinsing process in which the rinsing liquid is discharged onto the substrate from the second nozzle after the mixed fluid supplying process; an inert gas supply process of discharging the inert gas from the first nozzle onto the substrate during the rinsing process; The substrate processing apparatus according to any one of (1) to (10) above, (12) a substrate holder that rotatably holds the substrate; a nozzle having a shape extending linearly along a horizontal direction, which ejects a mixed fluid of a fluid containing vapor or mist of pure water and a processing liquid containing at least sulfuric acid from an ejection region extending along the horizontal direction; Equipped with The nozzle is a plurality of mixing sections arranged along the horizontal direction, communicating with the ejection region, and mixing the fluid and the treatment liquid; a plurality of first flow path portions arranged along the horizontal direction, communicating with the corresponding mixing portions, through which the treatment liquid flows; a plurality of second flow path portions that are arranged along the horizontal direction, communicate with the corresponding mixing portions, and through which the fluid flows; Equipped with At least one of the plurality of first flow path sections is different from the other first flow path sections in at least one of the shape and number of flow paths and the interval between adjacent first flow path sections. (13) The substrate processing apparatus according to (12), wherein the diameter of the flow path in any one of the plurality of first flow path sections is larger than the diameter of the flow path in a first flow path section that is located closer to the center of the substrate than the first flow path section. (14) the mixing section includes a jet port that opens into the discharge area, At least one of the plurality of first flow path sections includes a plurality of the flow paths, The substrate processing apparatus according to (12) or (13), wherein the plurality of flow paths are arranged at positions shifted from an axis passing through the center of the ejection port. (15) The substrate processing apparatus according to any one of (12) to (14), wherein the plurality of first flow path sections are detachable from the mixing section. (16) a substrate holding step of rotatably holding the substrate; a fluid supplying step of supplying a fluid containing pure water vapor or mist to a nozzle; a treatment liquid supplying step of supplying a treatment liquid containing at least sulfuric acid to the nozzle; a gas supplying step of supplying an inert gas to the nozzle; a discharge step of discharging a mixed fluid obtained by mixing the fluid, the processing liquid, and the inert gas from the nozzle onto the substrate; a flow rate adjusting step of adjusting a flow rate of the inert gas supplied to the nozzle in the discharge step; A substrate processing method comprising: [Explanation of symbols]

[0167] 1. Substrate processing equipment 41 Nozzle body 42 1st distribution route 43 2nd distribution route 43A 3rd distribution route 43a Individual N2 gas distribution line 43B 4th distribution route 43b Individual N2 gas distribution line 44 2nd mixing section 45 1st discharge port 46 1st discharge path 47 2nd outlet 48 2nd discharge path 47A 3rd outlet 48A 3rd discharge path 47B 4th outlet 48B 4th discharge path 49 Fluid mixing section 61 First flow path section 62 Second flow path section 63 Introduction Space 64 3rd mixing section 65 Lid 70 Control device 71 Control Unit 141 No. 1 nozzle 143 First swivel lift mechanism 151 Second nozzle 201 Vapor Supply Department 202 SPM supply section 203 N2 gas supply unit 210 Vapor Supply Line 220 SPM supply path 230 N2 gas supply line 231 N2 gas flow rate adjustment unit 231a Individual N2 gas flow rate adjustment unit 231b Individual N2 gas flow rate adjustment unit 301 1st mixing section 441 Spout 611 Flow path R discharge area Ra Individual discharge area Rb individual discharge area W wafer

Claims

1. a substrate holder that rotatably holds the substrate; a nozzle for discharging onto the substrate a mixed fluid obtained by mixing a fluid containing vapor or mist of pure water, a processing liquid containing at least sulfuric acid, and an inert gas; a fluid supply unit that supplies the fluid to the nozzle; a processing liquid supply unit that supplies the processing liquid to the nozzle; a gas supply unit that supplies the inert gas to the nozzle; a gas flow rate adjusting unit that adjusts the flow rate of the inert gas supplied from the gas supply unit to the nozzle; A substrate processing apparatus comprising:

2. a control unit for controlling the gas flow rate adjusting unit, 2. The substrate processing apparatus according to claim 1, wherein the control unit controls the gas flow rate adjuster to adjust a flow rate of the inert gas supplied to the nozzle, thereby performing a temperature adjustment process to adjust a temperature of the mixed fluid discharged from the nozzle.

3. 3. The substrate processing apparatus according to claim 2, wherein the flow rates of the fluid supplied from the fluid supply unit and the processing liquid supplied from the processing liquid supply unit are constant during the temperature adjustment process.

4. a moving unit that moves the nozzle in a horizontal direction, The substrate processing apparatus according to claim 2 , wherein the control unit, in the temperature adjustment process, adjusts the flow rate of the inert gas in accordance with a horizontal position of the nozzle while controlling the movement unit to move the nozzle.

5. 5. The substrate processing apparatus of claim 4, wherein the control unit controls the gas flow rate adjustment unit to adjust the flow rate of the inert gas when the nozzle is located at the outer periphery of the substrate, so that the flow rate of the inert gas when the nozzle is located at the center of the substrate, during the temperature adjustment process, is less than the flow rate of the inert gas when the nozzle is located at the center of the substrate.

6. the nozzle is an elongated nozzle extending linearly along a horizontal direction, and the mixed fluid is discharged from a discharge region extending along the horizontal direction; the gas supply unit includes a plurality of individual gas supply paths that individually supply the inert gas to the nozzles, 2. The substrate processing apparatus according to claim 1, wherein the gas flow rate adjusting unit comprises a plurality of individual gas flow rate adjusting units provided corresponding to the plurality of individual gas supply paths, each adjusting a flow rate of the inert gas supplied from the gas supply unit to the nozzle.

7. The nozzle is a fluid distribution channel connected to the fluid supply unit and distributing the fluid throughout the ejection area; a treatment liquid distribution channel connected to the treatment liquid supply unit and distributing the treatment liquid over the entire discharge area; a plurality of individual gas distribution paths that are provided corresponding to a plurality of individual discharge regions that divide the discharge region along the horizontal direction, and that distribute the inert gas supplied from the individual gas supply paths to the individual discharge regions; The substrate processing apparatus of claim 6 , comprising:

8. The plurality of individual discharge regions are a central ejection region corresponding to a central region located at a central portion of the substrate; a peripheral discharge region corresponding to a peripheral region located on the peripheral portion of the substrate; Including, The substrate processing apparatus according to claim 7 , wherein a flow rate of the inert gas supplied to the outer peripheral discharge region is lower than a flow rate of the inert gas supplied to the central discharge region.

9. a first mixing section located upstream of the nozzle and configured to mix the fluid supplied from the fluid supply section and the inert gas supplied from the gas supply section; a second mixing section located inside the nozzle and configured to mix the fluid and the inert gas supplied in a mixed state from the first mixing section with the processing liquid supplied from the processing liquid supply section; The substrate processing apparatus of claim 1 , comprising:

10. 2. The substrate processing apparatus according to claim 1, further comprising: a fluid mixing unit located inside the nozzle, which mixes the fluid supplied from the fluid supply unit, the processing liquid supplied from the processing liquid supply unit, and the inert gas supplied from the gas supply unit.

11. a second nozzle separate from the first nozzle; a rinse liquid supply unit that supplies a rinse liquid to the second nozzle; Control unit and Equipped with The control unit a mixed fluid supply process of discharging the mixed fluid from the first nozzle onto the substrate; a rinsing process of discharging the rinse liquid from the second nozzle onto the substrate after the mixed fluid supplying process; an inert gas supply process of discharging the inert gas from the first nozzle onto the substrate during the rinsing process; The substrate processing apparatus according to claim 1 , wherein the substrate processing apparatus performs the steps of:

12. a substrate holder that rotatably holds the substrate; a nozzle having a shape extending linearly along a horizontal direction, which ejects a mixed fluid of a fluid containing vapor or mist of pure water and a processing liquid containing at least sulfuric acid from an ejection region extending along the horizontal direction; Equipped with The nozzle is a plurality of mixing sections arranged along the horizontal direction, communicating with the ejection region, and mixing the fluid and the treatment liquid; a plurality of first flow path portions arranged along the horizontal direction, communicating with the corresponding mixing portions, through which the treatment liquid flows; a plurality of second flow path portions that are arranged along the horizontal direction, communicate with the corresponding mixing portions, and through which the fluid flows; Equipped with At least one of the plurality of first flow path sections is different from the other first flow path sections in at least one of the shape and number of flow paths and the distance between adjacent first flow path sections.

13. 13. The substrate processing apparatus of claim 12, wherein a diameter of the flow path in any one of the plurality of first flow path sections is larger than a diameter of the flow path in the first flow path section that is located closer to the center of the substrate than the first flow path section.

14. the mixing section includes a jet port that opens into the discharge area, At least one of the plurality of first flow path sections includes a plurality of the flow paths, The substrate processing apparatus according to claim 12 , wherein the plurality of flow paths are arranged at positions offset from an axis passing through a center of the ejection port.

15. The substrate processing apparatus according to claim 12 , wherein the plurality of first flow path sections are detachable from the mixing section.

16. a substrate holding step of rotatably holding the substrate; a fluid supplying step of supplying a fluid containing pure water vapor or mist to a nozzle; a treatment liquid supplying step of supplying a treatment liquid containing at least sulfuric acid to the nozzle; a gas supplying step of supplying an inert gas to the nozzle; a discharge step of discharging a mixed fluid obtained by mixing the fluid, the processing liquid, and the inert gas from the nozzle onto the substrate; a flow rate adjusting step of adjusting a flow rate of the inert gas supplied to the nozzle in the discharge step; A substrate processing method comprising:

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