Contactor fixture and inspection fixture

Abstract

To suppress degradation of input / output signals of a semiconductor device by compensating for the inductance possessed by a conductor of a contactor fixture.SOLUTION: The contactor fixture includes an insulating member, a first conductor, and a second conductor. The insulating member is positioned between the semiconductor device and a mounting portion. The first conductor penetrates the insulating member in a first direction aligned with the arrangement direction of the semiconductor device and the mounting portion, connecting a ground electrode of the semiconductor device to a first electrode of the mounting portion. The second conductor penetrates the insulating member in the first direction and is arranged alongside the first conductor in a second direction intersecting the first direction, connecting a high-frequency electrode of the semiconductor device to a second electrode of the mounting portion. The first conductor extends in a third direction intersecting both the first and second directions. The first conductor has a first protruding portion. The first protruding portion includes a first portion aligned with the second conductor in the third direction.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a contactor fixture and an inspection fixture. [Background technology]

[0002] Patent Document 1 discloses a performance inspection tool for electronic components, and Patent Document 2 discloses an evaluation device for semiconductor devices. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-55506 [Patent Document 2] Japanese Patent Application Laid-Open No. 2004-61290 Summary of the Invention [Problem to be solved by the invention]

[0004] For example, when manufacturing semiconductor devices such as amplifiers with built-in transistors, the semiconductor devices are assembled and then tested to evaluate their performance. Because this is a product test, the electrodes of the semiconductor devices cannot be conductively connected to the test equipment using solder or other methods. Therefore, a contactor jig with conductors is used to electrically connect the electrodes of the semiconductor device to the electrodes of the test equipment. However, if the input / output signals of the semiconductor device are degraded due to factors such as inductance in the contactor jig, the test accuracy will decrease.

[0005] An object of the present disclosure is to provide a contactor jig and an inspection jig that can compensate for the inductance of the conductors of the contactor jig and suppress degradation of input / output signals of a semiconductor device. [Means for solving the problem]

[0006] A contactor jig according to an embodiment of the present disclosure is used for testing semiconductor devices. The contactor jig interconnects a high-frequency electrode and a ground electrode provided on the bottom surface of a semiconductor device with a first electrode and a second electrode provided on the surface of a mounting portion on which the semiconductor device is mounted. The contactor jig includes an insulating member, a first conductor, and a second conductor. The insulating member has a first surface facing the bottom surface of the semiconductor device and a second surface facing the surface of the mounting portion. The first conductor and the second conductor penetrate the insulating member from the first surface to the second surface. The first conductor and the second conductor have a first end located closer to the first surface and a second end located closer to the second surface. The first conductor and the second conductor are aligned in a first direction along the first and second surfaces. The first and second ends of the first conductor are connected to the high-frequency electrode and the first electrode, respectively. The first and second ends of the second conductor are connected to the ground electrode and the second electrode, respectively. The second conductor extends in a second direction along the surface that intersects with the first direction. The second conductor has a first protruding portion that protrudes in the direction that intersects with the second direction. The first protruding portion includes a first portion that is aligned with the first conductor in the second direction. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to provide a contactor jig and an inspection jig that can compensate for the inductance of the conductors of the contactor jig and suppress degradation of input / output signals of a semiconductor device. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing the configuration of a Doherty amplifier circuit. [Figure 2] FIG. 2 is a side cross-sectional view showing a semiconductor device and an inspection jig. [Figure 3] FIG. 3 is an enlarged plan view showing a part of the contactor jig. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV shown in FIG. [Figure 5]FIG. 5 is an enlarged plan view showing a part of the contactor jig according to the first modified example. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI shown in FIG. [Figure 7] FIG. 7 is a side cross-sectional view showing the inspection jig. [Figure 8] FIG. 8 is an enlarged plan view showing a part of the contactor jig. [Figure 9] FIG. 9 is a side cross-sectional view showing a semiconductor device and an inspection jig. [Figure 10] FIG. 10 is an enlarged plan view showing a part of the contactor jig. [Figure 11] FIG. 11 is a Smith chart showing the results of a simulation verifying the effects of each of the above embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0009] [Description of the embodiments of the present disclosure] First, the details of the embodiments of the present disclosure will be listed and described. [1] A contactor jig according to one embodiment of the present disclosure is used for testing semiconductor devices. The contactor jig interconnects a ground electrode and a high-frequency electrode of a semiconductor device with a first electrode and a second electrode of a mounting portion on which the semiconductor device is mounted. The contactor jig includes an insulating member, a first conductor, and a second conductor. The insulating member is disposed between the semiconductor device and the mounting portion. The first conductor penetrates the insulating member along a first direction in which the semiconductor device and the mounting portion are aligned, and connects the ground electrode to the first electrode. The second conductor penetrates the insulating member along the first direction and is arranged alongside the first conductor in a second direction intersecting the first direction, and connects the high-frequency electrode to the second electrode. The first conductor extends in a third direction intersecting both the first and second directions. The first conductor has a first protruding portion protruding in a direction intersecting the third direction. The first protruding portion includes a first portion aligned with the second conductor in the third direction.

[0010] In the contactor jig described in [1] above, a first conductor connects the ground electrode to the first electrode, and a second conductor connects the high-frequency electrode to the second electrode. A capacitance exists between the first and second conductors, the magnitude of which depends on the distance and opposing area between the first and second conductors. This capacitance compensates for the inductance of the second conductor and reduces signal degradation due to the inductance. However, the distance and opposing area between the first and second conductors depend on the positions and sizes of the ground electrode and high-frequency electrode of the semiconductor device and cannot be freely changed. Therefore, in the contactor jig described in [1] above, the first conductor has a first protruding portion, and the first protruding portion includes a first portion aligned with the second conductor. This increases the capacitance between the first and second conductors. Therefore, the contactor jig described in [1] above can more effectively compensate for the inductance of the second conductor and suppress signal degradation due to the inductance.

[0011] [2] In the contactor jig of [1] above, the first conductor may further have a second protruding portion protruding in a direction intersecting the third direction. The second protruding portion may include a second portion aligned with the second conductor in the third direction. The second conductor may be located between the first portion and the second portion. In this case, the capacitance between the first conductor and the second conductor can be further increased.

[0012] [3] In the contactor jig of [1] or [2] above, the length of the first protruding portion in the protruding direction may be greater than the width of the first protruding portion in a direction perpendicular to both the first direction and the protruding direction.

[0013] [4] A contactor jig according to an embodiment of the present disclosure is used for testing semiconductor devices. The contactor jig interconnects a ground electrode and a high-frequency electrode of a semiconductor device with a first electrode and a second electrode of a mounting portion on which the semiconductor device is mounted. The contactor jig includes an insulating member, a first conductor, and a second conductor. The insulating member is disposed between the semiconductor device and the mounting portion. The first conductor penetrates the insulating member along a first direction in which the semiconductor device and the mounting portion are aligned, and connects the ground electrode to the first electrode. The second conductor penetrates the insulating member along the first direction and is arranged alongside the first conductor in a second direction intersecting the first direction, and connects the high-frequency electrode to the second electrode. The insulating member includes a high-dielectric-constant region disposed between the first conductor and the second conductor, and having a higher dielectric constant than other regions of the insulating member.

[0014] In the contactor jig described above in [4], the insulating member includes a high-dielectric-constant region disposed between the first and second conductors and having a higher dielectric constant than other regions of the insulating member. This increases the capacitance between the first and second conductors. This effectively compensates for the inductance of the second conductor, thereby suppressing signal degradation due to the inductance.

[0015] [5] In the contactor jig according to any one of [1] to [4] above, the cross-sectional area of ​​the first conductor in a cross section perpendicular to the first direction may be larger than the cross-sectional area of ​​the second conductor in a cross section perpendicular to the first direction. In this case, heat generated in the semiconductor device can be efficiently dissipated through the first conductor connected to the ground electrode of the semiconductor device.

[0016] [6] An inspection jig according to an embodiment of the present disclosure is used for inspecting semiconductor devices. The inspection jig includes a mounting portion and a contactor jig. The mounting portion mounts a semiconductor device having a ground electrode and a high-frequency electrode, and includes a first electrode and a second electrode. The contactor jig includes an insulating member, a first conductor, and a second conductor. The insulating member is disposed between the semiconductor device and the mounting portion. The first conductor penetrates the insulating member along a first direction, which is the alignment direction of the semiconductor device and the mounting portion, and connects the ground electrode to the first electrode. The second conductor penetrates the insulating member along the first direction and is arranged alongside the first conductor in a second direction intersecting the first direction, and connects the high-frequency electrode to the second electrode. The mounting portion further includes a conductive housing electrically and thermally connected to the first electrode, and a dielectric disposed between the housing and the second electrode. The second electrode includes a main portion extending from a connection point with the second conductor, and a stub protruding from the main portion in a direction intersecting the extension direction of the main portion.

[0017] In the inspection jig described in [6] above, a dielectric is provided between the second electrode and a conductive housing electrically connected to the first electrode (i.e., at ground potential). This generates a capacitance between the housing and the second electrode, the magnitude of which corresponds to the distance between the housing and the second electrode and the opposing area. This capacitance compensates for the inductance of the second conductor and reduces signal degradation due to that inductance. Furthermore, in the inspection jig described in [6] above, the second electrode includes, in addition to a main portion extending from the connection point with the second conductor, a stub protruding from the main portion in a direction intersecting the extension direction of the main portion. This stub increases the capacitance between the housing and the second electrode. Therefore, the inspection jig described in [6] above can more effectively compensate for the inductance of the second conductor and suppress signal degradation due to that inductance. [Details of the embodiments of the present disclosure]

[0018] Specific examples of the present disclosure will be described below with reference to the drawings. Note that the present invention is not limited to these examples, but is defined by the claims, and is intended to include all modifications within the meaning and scope equivalent to the claims. In the following description, the same elements in the description of the drawings will be given the same reference numerals, and duplicate explanations will be omitted.

[0019] [First embodiment] 1 is a diagram showing the configuration of a Doherty amplifier circuit 1 as an example of a circuit including a semiconductor device in which a contactor jig and an inspection jig according to a first embodiment of the present disclosure are used. The Doherty amplifier circuit 1 includes a hybrid coupler 2, a phase adjustment line 3, a main amplifier section 4, a peak amplifier section 5, and an impedance conversion circuit 6. The main amplifier section 4 includes a main amplifier input matching circuit 4a, a main amplifier 4b, and a main amplifier output matching circuit 4c. The peak amplifier section 5 includes a peak amplifier input matching circuit 5a, a peak amplifier 5b, and a peak amplifier output matching circuit 5c.

[0020] The hybrid coupler 2 is a two-input, two-output hybrid coupler. A first input terminal of the hybrid coupler 2 is connected to the ground potential line 1a via a resistor 2a of, for example, 50 Ω. A second input terminal of the hybrid coupler 2 is connected to a signal input terminal 1b of the Doherty amplifier circuit 1. The input impedance of the signal input terminal 1b is, for example, 50 Ω. A high-frequency signal to be amplified by the Doherty amplifier circuit 1 is input to the signal input terminal 1b. The hybrid coupler 2 splits the input high-frequency signal and outputs it to a first output terminal and a second output terminal.

[0021] The phase adjustment line 3 includes a first phase adjustment line 3a and a second phase adjustment line 3b. The impedance of the first phase adjustment line 3a and the second phase adjustment line 3b is 50Ω. The first phase adjustment line 3a is connected to a first output terminal of the hybrid coupler 2 and transmits the high-frequency signal output from the first output terminal (hereinafter referred to as the first high-frequency signal) to the main amplifier input matching circuit 4a. The second phase adjustment line 3b is connected to a second output terminal of the hybrid coupler 2 and transmits the high-frequency signal output from the second output terminal (hereinafter referred to as the second high-frequency signal) to the peak amplifier input matching circuit 5a. By adjusting the difference in line length between the first phase adjustment line 3a and the second phase adjustment line 3b, the difference in phase between the first high-frequency signal input to the main amplifier input matching circuit 4a and the second high-frequency signal input to the peak amplifier input matching circuit 5a is adjusted.

[0022] The main amplifier input matching circuit 4a matches the input impedance of the main amplifier 4b. The first high-frequency signal output from the first output terminal of the hybrid coupler 2 is input to the main amplifier 4b via the main amplifier input matching circuit 4a and amplified by the main amplifier 4b. The peak amplifier input matching circuit 5a matches the input impedance of the peak amplifier 5b. The second high-frequency signal output from the second output terminal of the hybrid coupler 2 is input to the peak amplifier 5b via the peak amplifier input matching circuit 5a and amplified by the peak amplifier 5b. The main amplifier 4b and the peak amplifier 5b are configured by circuits including transistors. The maximum output of the main amplifier 4b is, for example, 30 W. The maximum output of the peak amplifier 5b is greater than the maximum output of the main amplifier 4b, for example, 50 W.

[0023] The main amplifier output matching circuit 4c matches the output impedance of the main amplifier 4b. The amplified first high-frequency signal output from the main amplifier 4b is transmitted to node N1 via the main amplifier output matching circuit 4c. The peak amplifier output matching circuit 5c matches the output impedance of the peak amplifier 5b. The amplified second high-frequency signal output from the peak amplifier 5b is transmitted to node N1 via the peak amplifier output matching circuit 5c. At node N1, the amplified first high-frequency signal is multiplexed with the amplified second high-frequency signal.

[0024] The impedance conversion circuit 6 is connected to the node N1 and converts the impedance at the node N1 (for example, 38 Ω) to an impedance (for example, 50 Ω) required for the signal output terminal 1c of the Doherty amplifier circuit 1. The combined high-frequency signal is transmitted to the signal output terminal 1c via the impedance conversion circuit 6 and output from the signal output terminal 1c to the outside of the Doherty amplifier circuit 1.

[0025] Of the components of the Doherty amplifier circuit 1, the main amplifier section 4 and the peak amplifier section 5 are built into the semiconductor device 10. Figure 2 is a side cross-sectional view showing the semiconductor device 10 and an inspection jig 20A for inspecting the semiconductor device 10.

[0026] As shown in FIG. 2 , semiconductor device 10 has ground electrode 11, first high-frequency electrode 12, and second high-frequency electrode 13 on rear surface 10a. Ground electrode 11 is an electrode that defines the ground potential (reference potential) of semiconductor device 10. First high-frequency electrode 12 is, for example, a signal output terminal of main amplifier 4 or peak amplifier 5. Second high-frequency electrode 13 is, for example, a signal input terminal of main amplifier 4 or peak amplifier 5. First high-frequency electrode 12, ground electrode 11, and second high-frequency electrode 13 are arranged in this order on rear surface 10a of semiconductor device 10. That is, ground electrode 11 is provided between first high-frequency electrode 12 and second high-frequency electrode 13.

[0027] The inspection jig 20A includes a mounting portion 30A and a contactor jig 40A. The mounting portion 30A has a mounting surface 30a on which the semiconductor device 10 is mounted. The mounting portion 30A includes a housing 31, a dielectric 32 provided on the housing 31, a first electrode 33, and second electrodes 34 and 35. The housing 31 is conductive and is electrically and thermally connected to the first electrode 33. The housing 31 contacts the first electrode 33 through an opening formed in the dielectric 32. In one example, the housing 31 is made of metal. The dielectric 32 is made of, for example, a glass epoxy material. The dielectric constant of the dielectric 32 is, for example, 4.0. The thickness of the dielectric 32 is, for example, 0.5 mm. The second electrodes 34 and 35 are provided on the dielectric 32. That is, the dielectric 32 is provided between the housing 31 and both the second electrodes 34 and 35. The second electrode 34, the first electrode 33, and the second electrode 35 are arranged in this order on the mounting surface 30a. In other words, the first electrode 33 is disposed between the second electrode 34 and the second electrode 35.

[0028] Contactor jig 40A is disposed between semiconductor device 10 and mounting portion 30A. Contactor jig 40A interconnects ground electrode 11, first high-frequency electrode 12, and second high-frequency electrode 13 of semiconductor device 10 with first electrode 33, second electrode 34, and second electrode 35 of mounting portion 30A.

[0029] The contactor jig 40A includes an insulating member 41, a first conductor 42, and second conductors 43 and 44. The insulating member 41 is disposed between the semiconductor device 10 and the mounting portion 30A. The insulating member 41 is plate-shaped and has a first surface 41a and a second surface 41b. The first surface 41a faces the back surface 10a of the semiconductor device 10. The second surface 41b faces the mounting surface 30a of the mounting portion 30A. The thickness direction of the insulating member 41 (i.e., the normal direction to the first surface 41a and the second surface 41b) coincides with the arrangement direction of the semiconductor device 10 and the mounting portion 30A. Hereinafter, the arrangement direction of the semiconductor device 10 and the mounting portion 30A will be referred to as the first direction D1. The insulating member 41 is made of a material such as resin.

[0030] The first conductor 42, the second conductor 43, and the second conductor 44 penetrate the insulating member 41 from the first surface 41a to the second surface 41b along the first direction D1. The first conductor 42, the second conductor 43, and the second conductor 44 are made of, for example, a metal. The first conductor 42, the second conductor 43, and the second conductor 44 are insulated from each other by the insulating member 41.

[0031] A first end of the first conductor 42, which is closer to the first surface 41a, contacts the ground electrode 11 of the semiconductor device 10. A second end of the first conductor 42, which is closer to the second surface 41b, contacts the first electrode 33 of the mounting portion 30A. In this way, the first conductor 42 connects the ground electrode 11 to the first electrode 33.

[0032] A first end of the second conductor 43 closer to the first surface 41a comes into contact with the first high-frequency electrode 12 of the semiconductor device 10. A second end of the second conductor 43 closer to the second surface 41b comes into contact with the second electrode 34 of the mounting part 30A. In this way, the second conductor 43 connects the first high-frequency electrode 12 to the second electrode 34. The second conductor 43 is provided alongside the first conductor 42 in a second direction D2 that intersects with the first direction D1.

[0033] A first end of the second conductor 44 closer to the first surface 41a comes into contact with the second high-frequency electrode 13 of the semiconductor device 10. A second end of the second conductor 44 closer to the second surface 41b comes into contact with the second electrode 35 of the mounting portion 30A. In this way, the second conductor 44 connects the second high-frequency electrode 13 to the second electrode 35. The second conductor 44 is provided alongside the first conductor 42 in the second direction D2. The second conductor 44 is disposed on the opposite side of the first conductor 42 from the second conductor 43, and the first conductor 42 is located between the second conductor 43 and the second conductor 44.

[0034] FIG. 3 is an enlarged plan view of a portion of the contactor jig 40A. Note that FIG. 3 also shows the second electrode 34 of the mounting portion 30A by hidden lines. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3. The first conductor 42 extends in a third direction D3 that intersects both the first direction D1 and the second direction D2. The first conductor 42 has a first protruding portion 421. The first protruding portion 421 protrudes from a side of the first conductor 42 along the third direction D3 in a direction intersecting the third direction D3 (the second direction D2 in the illustrated example). The first protruding portion 421 includes a first portion 421a. The first portion 421a is located at the tip of the first protruding portion 421 and is aligned with the second conductor 43 in the third direction D3. In one example, the length L1 of the first protruding portion 421 in the protruding direction is greater than the width W1 of the first protruding portion 421 in a direction perpendicular to both the first direction D1 and the protruding direction.

[0035] As shown in FIGS. 2 and 3, the cross-sectional area of ​​the first conductor 42 in a cross section perpendicular to the first direction D1 is larger than the cross-sectional areas of the second conductors 43 and 44 in a cross section perpendicular to the first direction D1.

[0036] The effects obtained by the contactor jig 40A of this embodiment having the above configuration will be described. In the contactor jig 40A, the first conductor 42 connects the ground electrode 11 to the first electrode 33, and the second conductor 43 connects the first high-frequency electrode 12 to the second electrode 34. Between the first conductor 42 and the second conductor 43, there exists a capacitance C1 (see FIG. 3 ) whose magnitude depends on the distance and opposing area between the first conductor 42 and the second conductor 43. The capacitance C1 compensates for the inductance of the second conductor 43 and reduces signal degradation due to that inductance. However, the distance and opposing area between the first conductor 42 and the second conductor 43 depend on the positions and sizes of the ground electrode 11 and the first high-frequency electrode 12 of the semiconductor device 10 and therefore cannot be freely changed. Therefore, in the contactor jig 40A of this embodiment, the first conductor 42 has a first protruding portion 421, and the first protruding portion 421 includes a first portion 421a aligned with the second conductor 43. This forms a capacitance C2 (see FIGS. 3 and 4) between the first portion 421a and the second conductor 43, thereby increasing the capacitance between the first conductor 42 and the second conductor 43. Therefore, the contactor jig 40A of this embodiment can more effectively compensate for the inductance of the second conductor 43 and suppress signal degradation due to that inductance.

[0037] The first conductor 42 may further have a protruding portion that protrudes on the side opposite to the first protruding portion 421, and the first protruding portion may include a portion that is aligned with the second conductor 44 in the third direction D3. In this case, capacitance is formed between this portion and the second conductor 44, thereby increasing the capacitance between the first conductor 42 and the second conductor 44. This makes it possible to more effectively compensate for the inductance of the second conductor 44 and suppress signal degradation due to the inductance.

[0038] Furthermore, as in the present embodiment, the cross-sectional area of ​​the first conductor 42 in a cross section perpendicular to the first direction D1 may be larger than the cross-sectional areas of the second conductors 43, 44 in a cross section perpendicular to the first direction D1. In this case, the thermal conductivity of the first conductor 42 is increased, and heat generated in the semiconductor device 10 can be efficiently dissipated through the first conductor 42 connected to the ground electrode 11 of the semiconductor device 10.

[0039] [First Modification] Fig. 5 is an enlarged plan view showing a portion of a contactor jig 40B according to a first modified example. Note that in Fig. 5, the second electrode 34 of the mounting portion 30A is also shown by hidden lines. Fig. 6 is a view showing a cross section taken along line VI-VI shown in Fig. 5. In the contactor jig 40B of this modified example, the first conductor 42 further has a second protruding portion 422 in addition to the first protruding portion 421 of the above embodiment.

[0040] The second protruding portion 422 protrudes from a side of the first conductor 42 along the third direction D3 in a direction intersecting the third direction D3 (the second direction D2 in the illustrated example). The protruding direction of the second protruding portion 422 may be parallel to or inclined from the protruding direction of the first protruding portion 421. The second protruding portion 422 includes a second portion 422a. The second portion 422a is located at the tip of the second protruding portion 422 and is aligned with the second conductor 43 in the third direction D3. The second conductor 43 is located between the first portion 421a and the second portion 422a. In one example, the length L2 of the second protruding portion 422 in the protruding direction is greater than the width W2 of the second protruding portion 422 in a direction perpendicular to both the first direction D1 and the protruding direction.

[0041] As in this modification, the first conductor 42 may further have a second protruding portion 422 that protrudes in a direction intersecting with the third direction D3. In this case, a capacitance C3 (see FIGS. 5 and 6) is formed between the second portion 422a and the second conductor 43, so that the capacitance between the first conductor 42 and the second conductor 43 can be further increased.

[0042] [Second embodiment] Fig. 7 is a side cross-sectional view showing a semiconductor device 10 and an inspection jig 20B for inspecting the semiconductor device 10. The inspection jig 20B includes a contactor jig 40C instead of the contactor jig 40A of the first embodiment. Fig. 8 is an enlarged plan view showing a portion of the contactor jig 40C. As shown in FIGS. 7 and 8 , the first conductor 42 of this embodiment does not have the first protruding portion 421 of the first embodiment. Instead, the insulating member 41 includes a first high-permittivity region 411 and a second high-permittivity region 412. The first high-permittivity region 411 and the second high-permittivity region 412 have a higher dielectric constant than the other regions of the insulating member 41. The first high-permittivity region 411 and the second high-permittivity region 412 have a dielectric constant that is three to five times higher than the dielectric constant of the other regions. For example, when the dielectric constant of the other regions is 4.0, the dielectric constant is 17. The first high-permittivity region 411 and the second high-permittivity region 412 are made of a material such as a high-dielectric resin. The other regions of the insulating member 41 are made of a material such as a resin.

[0043] The first high dielectric constant region 411 is disposed between the first conductor 42 and the second conductor 43. As shown in the illustrated example, the first high dielectric constant region 411 may extend in the third direction D3 along the first conductor 42. The first high dielectric constant region 411 may also be in contact with one or both of the first conductor 42 and the second conductor 43. The second high dielectric constant region 412 is disposed between the first conductor 42 and the second conductor 44. The second high dielectric constant region 412 may extend in the third direction D3 along the first conductor 42. The second high dielectric constant region 412 may also be in contact with one or both of the first conductor 42 and the second conductor 44.

[0044] In the contactor jig 40C of this embodiment, the insulating member 41 includes a first high-dielectric-constant region 411 disposed between the first conductor 42 and the second conductor 43 and having a higher dielectric constant than the other regions of the insulating member 41. This increases the capacitance C1 between the first conductor 42 and the second conductor 43. This more effectively compensates for the inductance of the second conductor 43, thereby suppressing signal degradation due to the inductance. In addition, the insulating member 41 includes a second high-dielectric-constant region 412 disposed between the first conductor 42 and the second conductor 44 and having a higher dielectric constant than the other regions of the insulating member 41. This increases the capacitance between the first conductor 42 and the second conductor 44. This more effectively compensates for the inductance of the second conductor 44, thereby suppressing signal degradation due to the inductance. The configuration is not limited to this embodiment, and insulating member 41 of contactor jig 40C may have only one of first high dielectric constant region 411 and second high dielectric constant region 412.

[0045] As an example, the distance between the first conductor 42 and the second conductor 43 is set to 1.0 mm, and the facing area of ​​the second conductor 43 with respect to the first conductor 42 is set to 0.4 mm. 2 When the insulating member 41 does not include the first high dielectric constant region 411, if the relative dielectric constant of the insulating member 41 between the first conductor 42 and the second conductor 43 is 4.0, the capacitance C1 is 0.014 pF. On the other hand, when the insulating member 41 includes the first high dielectric constant region 411, if the relative dielectric constant of the first high dielectric constant region 411 between the first conductor 42 and the second conductor 43 is 17, the capacitance C1 is 0.06 pF. In this way, according to this embodiment, the capacitance C1 can be increased, for example, to about four times that of the conventional capacitance.

[0046] [Third embodiment] FIG. 9 is a side cross-sectional view showing a semiconductor device 10 and an inspection jig 20C for inspecting the semiconductor device 10. The inspection jig 20C includes a contactor jig 40D instead of the contactor jig 40A of the first embodiment. The inspection jig 20C also includes a mounting portion 30B instead of the mounting portion 30A of the first embodiment. FIG. 10 is a plan view showing an enlarged portion of the contactor jig 40D. Note that the second electrode 36 of the mounting portion 30B is also shown by hidden lines in FIG. 10. The contactor jig 40D differs from the contactor jig 40A of the first embodiment in that the first conductor 42 does not have the first protruding portion 421, but is otherwise identical to the contactor jig 40A. The mounting portion 30B includes a second electrode 36 instead of the second electrode 34 of the first embodiment. The second electrode 36 has the same configuration as the second electrode 34 except that it includes two stubs 36b.

[0047] The second electrode 36 includes a main portion 36a and two stubs (open stubs) 36b. The main portion 36a extends in the second direction from the connection point with the second conductor 43. The two stubs 36b protrude from the main portion 36a in a direction intersecting the extension direction of the main portion 36a (in the illustrated example, the third direction and the opposite direction). The two stubs 36b have a planar shape, such as a rectangular shape.

[0048] In the inspection jig 20C of this embodiment, the second electrode 36 includes, in addition to a main portion 36a extending from the connection point with the second conductor 43, two stubs 36b protruding from the main portion 36a in a direction intersecting the extension direction of the main portion 36a. Because the dielectric 32 is interposed between these stubs 36b and the housing 31, capacitance is formed between these stubs 36b and the housing 31. Therefore, these stubs 36b can increase the capacitance between the housing 31 and the second electrode 36. Therefore, according to the inspection jig 20C of this embodiment, the inductance of the second conductor 43 can be more effectively compensated for, and signal degradation due to the inductance can be suppressed.

[0049] As an example, the distance between the first conductor 42 and the second conductor 43 is set to 1.0 mm, and the facing area of ​​the second conductor 43 with respect to the first conductor 42 is set to 0.4 mm.2 If the relative dielectric constant of the insulating member 41 between the first conductor 42 and the second conductor 43 is 4.0, the capacitance C1 is 0.014 pF. On the other hand, if the total area of ​​the two stubs 36b is 0.6 mm 2 This means that the capacitance between the stub 36b and the housing 31 is 0.06 pF. Therefore, the capacitance can be increased to, for example, about 1.4 times that of the conventional case.

[0050] Although the above description shows an example in which two stubs 36b are provided, the number of stubs 36b may be one, or three or more. Also, in the above example, the stubs 36b are provided on both sides of the main portion 36a, but the stubs 36b may be provided on only one side of the main portion 36a. Also, the shape of the stubs 36b is not limited to the rectangular shape described above, and they may have various other shapes.

[0051] [Example] FIG. 11 is a Smith chart showing the results of a simulation verifying the effects of each of the above-described embodiments. In FIG. 11, plot P1 shows the calculation results for a comparative example in which it is assumed that no capacitance exists between the first conductor 42 and the second conductor 43. Plot P2 shows the calculation results for the first or second embodiment in which a capacitance of 0.06 pF exists between the first conductor 42 and the second conductor 43. Plot P3 shows the calculation results for the third embodiment in which the second electrode 36 includes a stub 36b. The signal frequency used in the calculations was 7.0 GHz.

[0052] As a result of the above simulation, the complex impedance was 50.000 + 7.037j (Ω) when it was assumed that there was no capacitance between the first conductor 42 and the second conductor 43. Furthermore, the complex impedance was 50.988 + 0.315j (Ω) when a capacitance of 0.06 pF existed between the first conductor 42 and the second conductor 43. Furthermore, the complex impedance was 50.942 + 0.095j (Ω) when the second electrode 36 included the stub 36b. Thus, it was shown that increasing the capacitance between the first conductor 42 and the second conductor 43 or adding the stub 36b to the second electrode 36 reduces the reactance of the complex impedance, thereby effectively compensating for the inductance of the second conductor 43.

[0053] The contactor jig and inspection jig according to the present disclosure are not limited to the above-described embodiments and modifications, and various other modifications are possible. For example, the contactor jig or inspection jig may have at least two of the first protruding portion of the first embodiment, the high dielectric constant region of the second embodiment, and the stub of the third embodiment. [Explanation of symbols]

[0054] 1...Doherty amplifier circuit 1a...Ground potential line 1b...Signal input terminal 1c...Signal output terminal 2...Hybrid coupler 2a...Resistance 3...Phase adjustment line 3a...First phase adjustment line 3b...Second phase adjustment line 4...Main amplifier section 4a...Main amplifier input matching circuit 4b...Main amplifier 4c...Main amplifier output matching circuit 5...Peak amplifier 5a...Peak amplifier input matching circuit 5b...Peak amplifier 5c...Peak amplifier output matching circuit 6...Impedance conversion circuit 10...Semiconductor devices 10a...back 11...Ground electrode 12...First high-frequency electrode 13...Second high-frequency electrode 20A, 20B, 20C...Inspection jig 30A,30B…Mounting section 30a...Mounting surface 31...Case 32...Dielectric 33...1st electrode 34,35,36…Second electrode 36a...Main section 36b...Stab 40A, 40B, 40C, 40D...Contactor jig 41...Insulating member 41a…First page 41b…Second side 42...First conductor 43, 44...Second conductor 411...First high dielectric constant region 412...Second high dielectric constant region 421...First protruding part 421a…Part 1 422...Second protruding part 422a…Second part C1,C2,C3…capacity D1…first direction D2…Second direction D3…Third direction N1...Node P1, P2, P3...plot W1, W2...Width L1, L2...length

Claims

1. A contactor jig used for testing a semiconductor device, which connects a ground electrode and a high-frequency electrode of the semiconductor device to a first electrode and a second electrode of a mounting portion on which the semiconductor device is mounted, an insulating member disposed between the semiconductor device and the mounting portion; a first conductor that penetrates the insulating member along a first direction that is an arrangement direction of the semiconductor device and the mounting portion, and connects the ground electrode to the first electrode; a second conductor that penetrates the insulating member along the first direction and is arranged alongside the first conductor in a second direction that intersects with the first direction, and that connects the high-frequency electrode to the second electrode; Equipped with the first conductor extends in a third direction intersecting both the first direction and the second direction; the first conductor has a first protruding portion that protrudes in a direction intersecting the third direction, The first protruding portion includes a first portion aligned with the second conductor in the third direction.

2. the first conductor further has a second protruding portion protruding in a direction intersecting the third direction, the second protruding portion includes a second portion aligned with the second conductor in the third direction, The contactor fixture according to claim 1 , wherein the second conductor is located between the first portion and the second portion.

3. The contactor jig according to claim 1 , wherein a length of the first protruding portion in a protruding direction is greater than a width of the first protruding portion in a direction perpendicular to both the first direction and the protruding direction.

4. A contactor jig used for testing a semiconductor device, which connects a ground electrode and a high-frequency electrode of the semiconductor device to a first electrode and a second electrode of a mounting portion on which the semiconductor device is mounted, an insulating member disposed between the semiconductor device and the mounting portion; a first conductor that penetrates the insulating member along a first direction that is an arrangement direction of the semiconductor device and the mounting portion, and connects the ground electrode to the first electrode; a second conductor that penetrates the insulating member along the first direction and is arranged alongside the first conductor in a second direction that intersects with the first direction, and that connects the high-frequency electrode to the second electrode; Equipped with The contactor fixture, wherein the insulating member includes a high dielectric constant region disposed between the first conductor and the second conductor and having a higher dielectric constant than other regions of the insulating member.

5. 5 . The contactor jig according to claim 1 , wherein a cross-sectional area of ​​the first conductor in a cross section perpendicular to the first direction is larger than a cross-sectional area of ​​the second conductor in a cross section perpendicular to the first direction.

6. An inspection jig used for inspecting semiconductor devices, a mounting portion having a first electrode and a second electrode, the mounting portion mounting a semiconductor device having a ground electrode and a high-frequency electrode; a contactor jig; Equipped with The contactor jig includes: an insulating member disposed between the semiconductor device and the mounting portion; a first conductor that penetrates the insulating member along a first direction that is an arrangement direction of the semiconductor device and the mounting portion, and connects the ground electrode to the first electrode; a second conductor that penetrates the insulating member along the first direction and is arranged alongside the first conductor in a second direction that intersects with the first direction, and that connects the high-frequency electrode to the second electrode; and The mounting section is a conductive housing electrically and thermally connected to the first electrode; a dielectric provided between the housing and the second electrode; and The second electrode is a main portion extending from a connection point with the second conductor; a stub protruding from the main portion in a direction intersecting the extending direction of the main portion; Including, inspection fixture.

Images