Lid of heat treatment chamber using rear side pumping

Abstract

To provide a lid plate and a treatment chamber for improving the uniformity of a film to be deposited.SOLUTION: A lid plate 170 is used for a lid assembly of a processing chamber. The lid plate includes a contour bottom surface 160 extending downward and outward from a center opening around a center axis 133 to a peripheral portion of the lid plate. The contour bottom surface includes an inner zone ZI, an intermediate zone ZM and an outer zone ZO. The inner zone is defined from the center axis to an inner-zone radial distance. The intermediate zone is defined from the inner-zone radial distance to an intermediate-zone radial distance. The outer zone is defined from the intermediate-zone radial distance to an outer-zone radial distance at an outer edge of the contour bottom surface. The outer zone is inclined from the intermediate-zone radial distance toward the lid plate to form an outer-zone angle. The outer zone includes a plurality of pumping holes 525 formed through the lid plate.SELECTED DRAWING: Figure 6B

Description

[Technical Field]

[0001]

[0001] Embodiments of the present disclosure relate to the field of electronic device manufacturing. In particular, embodiments of the present disclosure are directed to an apparatus for delivering reactant gases in semiconductor device manufacturing. [Background technology]

[0002]

[0002] Reliable production of submicron features is one of the key technologies for the next generation of very large scale integration (VLSI) and ultra-large scale integration (ULSI) semiconductor devices. However, as the limits of circuit technology are pushed, the shrinking dimensions of interconnects in VLSI and ULSI technologies have increased the demand for processing power. Multilevel interconnects, which lie at the heart of VLSI and ULSI technology, use precision processing of high aspect ratio features such as vias and other interconnects. Reliable formation of these interconnects is crucial to the success of VLSI and ULSI and the ongoing effort to increase circuit density and quality on individual substrates.

[0003]

[0003] As circuit density increases, the widths of interconnects such as vias, trenches, contacts, and other features, as well as the dielectric material between them, decrease, while the thickness of the dielectric layers remains substantially constant, resulting in an increase in the height-to-width aspect ratio of the features. Many traditional deposition processes have difficulty filling submicron structures and providing good step coverage for surface features.

[0004] Atomic layer deposition (ALD) is a deposition technique being explored for depositing material layers on features with high aspect ratios. One example of an ALD process involves the sequential introduction of pulses of gas. For example, one cycle for the sequential introduction of pulses of gas can include a pulse of a first reactant gas, followed by a pulse of purge gas and / or pumping, followed by a pulse of a second reactant gas, followed by a pulse of purge gas and / or pumping. As used herein, the term "gas" is defined to include a single gas or multiple gases. The sequential introduction of separate pulses of a first reactant and a second reactant can result in the alternating self-limiting adsorption of monolayers of reactant on the surface of the substrate, thus forming a monolayer of material with each cycle. This cycle can be repeated to form a film of a predetermined thickness. The pulse of purge gas and / or pumping between the pulses of the first reactant gas and the pulse of the second reactant gas serves to reduce the possibility of gas-phase reaction of the reactants due to excess reactants remaining in the chamber.

[0005] In some chamber designs for ALD processing, precursors and gases are delivered using a funnel lid, through which precursors are dispensed from multiple injectors on the funnel-shaped lid. The injectors generate a circular motion of the jet of gas, which is dispersed through a funnel shape at the center of the lid. The rotational inertia of the gas / ALD precursor molecules distributes the molecules from the center to the edges, improving deposition uniformity.

[0006] It has been observed that reactive gases become trapped between the lid plate and the showerhead during processing, resulting in non-uniformity in the deposited film. Therefore, there is a continuing need in the art for methods and apparatus for improving the uniformity of deposited films. Summary of the Invention

[0007] One or more embodiments of the present disclosure are directed to a lid assembly for a processing chamber. A housing encloses a gas distribution channel extending along a central axis of the housing. The gas distribution channel has an upper and lower portion. A lid plate is connected to the housing and has a contoured bottom surface extending downward and outward from a central opening connected to the lower portion of the gas distribution channel to a peripheral portion of the lid plate. A gas distribution plate is disposed below the lid plate and has an upper peripheral contour configured to form a pumping channel between the gas distribution plate and the lid plate. The gas distribution plate has an upper surface and a bottom surface, and a plurality of apertures are disposed through the gas distribution plate from the top surface to the bottom surface. The contoured bottom surface of the lid plate and the upper surface of the gas distribution plate define a gap. [Brief explanation of the drawings]

[0008]

[0008] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, will be obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. However, since the present disclosure may admit of other equally effective embodiments, it should be noted that the accompanying drawings illustrate only typical embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure. The embodiments described herein are shown by way of example and not limitation in the accompanying drawings, in which like reference numerals indicate similar elements.

[0009] [Figure 1] 1 is a schematic diagram of a processing chamber according to some embodiments of the present disclosure. [Figure 2]

[0010] 1 is a schematic cross-sectional view of a processing chamber according to some embodiments of the present disclosure. [Figure 3]

[0011] 1 is a schematic cross-sectional view of a lid assembly according to some embodiments of the present disclosure. [Figure 4]

[0012] 1A-C are schematic diagrams of apertures through a gas distribution plate according to embodiments of the present disclosure. [Figure 5]

[0013] 1 is a schematic cross-sectional view of a lid assembly according to one or more embodiments of the present disclosure. [Figure 6]

[0014] 1A is a schematic cross-sectional view of a lid plate according to one or more embodiments of the present disclosure.

[0015] 1B is a schematic cross-sectional view of a lid assembly according to one or more embodiments of the present disclosure. [Figure 7]

[0016] 1 is a schematic cross-sectional view of a lid assembly according to one or more embodiments of the present disclosure. [Figure 8]

[0017] 1 is a schematic cross-sectional view of a lid assembly according to one or more embodiments of the present disclosure.

[0010]

[0018] To facilitate understanding, the same reference numerals have been used, where possible, to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further description. DETAILED DESCRIPTION OF THE INVENTION

[0011]

[0019] Before describing some example embodiments of the present disclosure, it is to be understood that the present disclosure is not limited to the details of construction or process steps set forth in the following description. The present disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0012]

[0020] As used herein, "substrate" refers to any substrate or material surface formed on a substrate on which a film treatment is performed during a manufacturing process. For example, substrate surfaces on which treatment can be performed include materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. Substrates include, but are not limited to, semiconductor wafers. Substrates can be exposed to pretreatment processes to polish, etch, reduce, oxidize, hydroxylate, anneal, and / or bake the substrate surface. In the present disclosure, in addition to film treatments directly on the surface of the substrate itself, any of the disclosed film treatment steps can be performed on underlying layers formed on the substrate, as disclosed in more detail below, and the term "substrate surface" is intended to include such underlying layers as the context indicates. Thus, for example, if a film / layer or partial film / layer is being deposited on a substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0013]

[0021] As used in this specification and claims, the terms "precursor," "reactant," "reactant gas," and the like are used interchangeably and refer to any gas species capable of reacting with the substrate surface.

[0014]

[0022] Embodiments of the present disclosure provide apparatus and methods that can be used to clean a substrate processing chamber, such as an atomic layer deposition (ALD) chamber, and to deposit materials, for example, during an ALD process. The embodiments include a substrate processing chamber and a gas delivery system that can include a remote plasma source and a gas distribution plate. The following processing chamber description is provided for contextual and illustrative purposes and should not be construed or understood as limiting the scope of the present disclosure.

[0015]

[0023] FIG. 1 is a schematic diagram of a substrate processing chamber (processing chamber 100) including a gas delivery system 130 adapted for ALD processes, according to some embodiments of the present disclosure. FIG. 2 is a cross-sectional view of the processing chamber 100. The processing chamber 100 includes a chamber body 102 having a processing volume below an internal chamber lid assembly 132. A slit valve 108 in the processing chamber 100 provides access for a robot (not shown) to deliver and retrieve substrates 110, such as 200 mm or 300 mm semiconductor wafers or glass substrates, to and from the processing chamber 100. A chamber liner 177 is disposed along the walls of the processing chamber 100 to protect the chamber from corrosive gases used during processing / cleaning.

[0016]

[0024] The substrate support 112 supports the substrate 110 on a substrate receiving surface 111 of the processing chamber 100. The substrate support 112 is attached to a lift motor 114 for raising and lowering the substrate support 112 and the substrate 110 disposed on the substrate support. A lift plate 116 (shown in FIG. 2 ) is connected to a lift motor 118 and raises and lowers lift pins 120 mounted to the processing chamber 100 and movably disposed through the substrate support 112. The lift pins 120 raise and lower the substrate 110 above the surface of the substrate support 112. The substrate support 112 may include a vacuum chuck (not shown), an electrostatic chuck (not shown), or a clamp ring (not shown) for securing the substrate 110 to the substrate support 112 during the deposition process.

[0017]

[0025] The temperature of the substrate support 112 may be adjusted to control the temperature of the substrate 110. For example, the substrate support 112 may be heated using an embedded heating element, such as a resistive heater (not shown), or may be heated using radiant heat, such as heat lamps (not shown) positioned above the substrate support 112. A purge ring 122 may be disposed on the substrate support 112 and define a purge channel 124 that provides a purge gas to a peripheral portion of the substrate 110 to prevent deposition thereon.

[0018]

[0026] A gas supply system 130 is disposed on top of the chamber body 102 to provide gases, such as process gases and / or purge gases, to the chamber 100. A vacuum system (not shown) is in communication with the pumping channel 179 to evacuate any desired gases from the processing chamber 100 and to help maintain a desired pressure or pressure range within the processing chamber 100.

[0019]

[0027] In some embodiments, the chamber lid assembly 132 includes a gas distribution channel 134 extending through a central portion of the chamber lid assembly 132. As shown in FIGS. 1 and 2 , the gas distribution channel 134 extends vertically toward the substrate receiving surface 111 and extends along a central axis 133 of the gas distribution channel 134 through the lid plate 170 to the bottom surface 160. In some embodiments, the upper portion of the gas distribution channel 134 is substantially cylindrical along the central axis 133, and the lower portion of the gas distribution channel 134 tapers away from the central axis 133. The bottom surface 160 is sized and shaped to substantially cover the substrate 110 disposed on the substrate receiving surface 111 of the substrate support 112. The bottom surface 160 tapers from the outer edge of the lid plate 170 toward the gas distribution channel 134. The gas supply system 130 can provide one or more gases to the gas distribution channel 134 for processing the substrate 110. In some embodiments, the gas supply system 130 may be coupled to the gas dispersion channel 134 through one gas inlet. In some embodiments, the gas supply system may be coupled to the gas dispersion channel 134 through multiple inlets, as shown, for example, in FIG.

[0020]

[0028] 3, the circular gas flow 174, which represents the flow of process gas through the gas dispersion channel 134, can include various types of flow patterns. In some embodiments, the process gas can be rotated about the central axis 133 of the gas dispersion channel 134 while passing through the dispersion channel. In such embodiments, the circular gas flow 174 can include various types of circular flow patterns, such as a vortex pattern, a three-dimensional spiral pattern, a helical pattern, or derivatives thereof.

[0021]

[0029] While providing a circular gas flow 174 is beneficial for many applications, the inventors have discovered that in some applications, the circular gas flow can lead to non-uniform processing results. The inventors have observed that the gas flow can result in a donut-shaped deposition profile near the center of the substrate 110 being processed. The donut-shaped profile can be caused by the funnel shape of the gas distribution channels 134. Accordingly, in some embodiments, the processing chamber 100 further includes a gas distribution plate 125 having a plurality of apertures 126 therethrough. The gas distribution plate 125 extends to the surface of the gas distribution channels 134 such that the only path from the gas distribution channels 134 to the substrate is through the plurality of apertures 126 in the gas distribution plate 125. The gas distribution plate 125 advantageously creates a choked flow of gas through the gas distribution plate 125, resulting in more uniform deposition on the substrate 110 and thus substantially eliminating the donut-shaped deposition caused by the rotational flow of gas.

[0022]

[0030] In some embodiments, the gas distribution plate 125 is formed of a non-corrosive ceramic material, such as aluminum oxide or aluminum nitride. In some embodiments, each of the plurality of apertures 126 can have a similar fluid conductance. In some embodiments, the density of the plurality of apertures 126 (e.g., the number of apertures per unit area or the aperture opening size) can be varied across the gas distribution plate 125 to achieve a desired deposition profile on the substrate 110. For example, a higher density of apertures 126 can be located in the center of the gas distribution plate 125 to increase the deposition rate at the center of the substrate relative to the edge of the substrate, further improving deposition uniformity.

[0023]

[0031] Although the plurality of apertures 126 are shown as cylindrical through-holes, they may have different profiles. Figures 4A-C show different non-limiting embodiments of the profiles of the plurality of apertures 126. In the embodiment shown in Figure 4A, the apertures 126 are cylindrical through-holes with curved edges 402 surrounding the apertures. In the embodiment shown in Figure 4B, the apertures 126 are through-holes having an upper portion 404 that tapers inward toward the center of the aperture, a cylindrical center portion 405 that extends perpendicular to the upper surface 127 of the gas distribution plate 125, and a lower portion 406 that tapers outward from the center of the aperture. In the embodiment shown in Figure 4C, the apertures 126 are through-holes having an upper portion 408 with a countersunk hole, a cylindrical center portion 409 that extends perpendicular to the upper surface 127 of the gas distribution plate 125, and a lower portion 410 that tapers outward from the center of the aperture. Alternatively, other profiles of the plurality of apertures 126 may be used to achieve optimal deposition uniformity during processing of the substrate 110 .

[0024]

[0032] While not wishing to be bound by theory, the inventors believe that by having the diameter of the gas dispersion channel 134 be constant from the top of the gas dispersion channel 134 to a first point along the central axis 133 and increasing from the first point to the bottom 135 of the gas dispersion channel 134, the adiabatic expansion of the gas through the gas dispersion channel 134 can be reduced, which can help control the temperature of the process gas contained in the circular gas flow 174. For example, a sudden adiabatic expansion of the gas delivered into the gas dispersion channel 134 can result in a drop in the gas temperature, which can cause the gas to condense and form droplets. On the other hand, a tapered gas dispersion channel 134 is believed to provide a smaller adiabatic expansion of the gas. Therefore, more heat can be transferred to or from the gas, which makes it easier to control the temperature of the gas by controlling the temperature of the chamber lid assembly 132. The gas dispersion channel 134 may be tapered and may include one or more tapered inner surfaces, such as tapered flat surfaces, concave surfaces, convex surfaces, or combinations thereof, or may include one or more tapered inner surface sections (i.e., tapered and non-tapered portions).

[0025]

[0033] As shown in FIG. 3 , the upper portion of the gas dispersion channel 134 is defined by an insert 300 disposed within an interior region of the housing 375. The insert 300 includes a cap 302 over the insert 300 and a central passageway that at least partially defines the gas dispersion channel 134. The cap 302 extends over the housing 375 to hold the insert 300 in place. The insert 300 and cap 302 include a plurality of O-rings 385 disposed between the insert 300 and the housing 375 to ensure a proper seal. The insert 300 includes a plurality of circumferential apertures that form a corresponding plurality of circumferential channels 360, 365, 370 when the insert 300 is inserted into the housing 375. The multiple circumferential channels 360, 365, 370 are fluidly connected to the gas dispersion channel 134 via a corresponding plurality of holes 340, 345, 350. 3, the gas supply system 130 is coupled to the gas distribution channel 134 via a plurality of gas supply lines 310, 315, 320. The gas supply lines 310, 315, 320 are fluidly connected to a plurality of circumferential channels 360, 365, 370 to provide one or more gases to the gas distribution channel 134.

[0026]

[0034] 1 and 2, the processing chamber 100 further includes a chamber cleaning system including a remote plasma source (RPS) 190, an isolation collar 192 coupled at one end to the RPS 190 and at the opposite end to the cap 302, a heater plate 198 coupled to the top surface of the lid plate 170, and a cleaning gas (i.e., purge gas) source 197 fluidly connected to the RPS 190. The cleaning gas source may include any gas suitable for forming a plasma to clean the processing chamber 100. In some embodiments, for example, the cleaning gas may be nitrogen trifluoride (NF). The isolation collar 192 includes an inner channel 193 fluidly connected to the gas distribution channel 134 through a plurality of holes 285 disposed in a central portion of the cap 302, allowing the plasma to flow from the RPS 190 through the gas distribution channel 134 and into the reaction zone 164. The heater plate 198 is formed of stainless steel and may include a plurality of resistive heating elements distributed throughout the plate.

[0027]

[0035] Typically, to quickly purge the first gas from the gas dispersion channel 134 and the reaction zone 164, the first gas is supplied to the gas dispersion channel 134 by the gas supply system 130, and then a cleaning gas is flowed through the gas dispersion channel 134 and the reaction zone 164. Subsequently, a second gas is provided to the gas dispersion channel 134 by the gas supply system 130, and the cleaning gas is again flowed through the gas dispersion channel 134 into the reaction zone 164, quickly purging the second gas from the gas dispersion channel 134 and the reaction zone 164. However, adding the gas distribution plate 125 chokes the flow of the cleaning gas into the pumping channel 179, prolonging the cleaning process. Therefore, the inventors incorporated an exhaust system 180 having an exhaust conduit 184 whose first end 186 is connected to the isolation collar 192 and whose second end 188 is connected to the pumping channel 179. A valve 182 is disposed in exhaust conduit 184 to selectively fluidly connect exhaust conduit 184 to internal channel 193. In some embodiments, for example, valve 182 may be a plunger-type valve having a plunger 202 movable between a first position (shown in FIG. 2 ) that fluidly connects exhaust conduit 184 to internal channel 193 and a second position that seals exhaust conduit 184 from internal channel 193. Each time cleaning gas flows through gas dispersion channel 134 and reaction zone 164, valve 182 opens, allowing the cleaning gas to be rapidly exhausted into pumping channel 179.

[0028]

[0036] If the pressure inside the processing chamber 100 exceeds the pressure inside the RPS 190, process gas may flow up to the RPS 190 and potentially damage it. The holes 285 act as choke points to prevent backflow of process gas from flowing upward through the inner channel 193 and into the RPS 190. The isolation collar 192 can be made of any material that does not react with the cleaning gas being used. In some embodiments, the isolation collar 192 may be made of aluminum when the cleaning gas is NF3. In some embodiments, the isolation collar 192 and insert 300 may be made of aluminum and coated with a coating to prevent corrosion of the isolation collar 192 and insert 300 by corrosive gases during use. For example, the coating may be made of nickel or aluminum oxide.

[0029] As shown in FIG. 3 , the RPS 190 operates at a temperature of approximately 40° C. or less. To advantageously insulate the RPS 190 from heat generated within the processing chamber 100, a thermal isolation ring 394 is disposed between the isolation collar 192 and the cap 302. The thermal isolation ring 394 is formed of a metal with low thermal conductivity (e.g., lower than the thermal conductivity of the isolation collar 192 and the cap 302). Additionally, an O-ring 385 may be disposed between the isolation collar 192 and the cap 302 to further reduce the contact area between the isolation collar 192 and the cap 302. The combination of the thermal isolation ring 394 and the O-ring 385 acts as a thermal choke to ensure that heat generated within the processing chamber 100 does not adversely affect the RPS 190.

[0030]

[0038] In some embodiments, the processing chamber 100 may include a differential pumping line 250 to ensure that process gases or by-products trapped between the O-rings 385 are evacuated to the pumping channel 179 when the lid plate 170 is heated above 100° C. The differential pumping line 250 is coupled to the lid plate 170 at a first end and to the housing 375 at a second end opposite the first end. The differential pumping line is fluidly coupled to the gas distribution channel 134 and one or more channels 260 formed in the region between two or more O-rings 385. When the valve 182 is opened to evacuate the gas distribution channel 134, the differential pumping line evacuates the gas trapped between the O-rings 385.

[0031]

[0039] 3 , a portion of the bottom surface 160 of the chamber lid assembly 132 may be contoured or angled downward and outward from a central opening connected to the gas distribution channels 134 to a peripheral portion of the chamber lid assembly 132, which may help improve the velocity profile of gas flow from the gas distribution channels 134 across the surface of the substrate 110 (i.e., from the center of the substrate to the edge of the substrate). The bottom surface 160 may include one or more surfaces, such as a flat, concave, convex, or combinations thereof. In one embodiment, the bottom surface 160 is convex funnel-shaped.

[0032]

[0040] In one example, the bottom surface 160 slopes downward and outward toward the edge of the substrate receiving surface 111 to help reduce variations in the velocity of process gases traveling between the bottom surface 160 of the chamber lid assembly 132 and the substrate 110 and to help provide uniform exposure of the surface of the substrate 110 to reactant gases. The components and parts of the chamber lid assembly 132 may include materials such as stainless steel, aluminum, nickel-plated aluminum, nickel, alloys thereof, or other suitable materials. In one embodiment, the lid plate 170 may be independently manufactured, machined, forged, or otherwise fabricated from a metal such as aluminum, an aluminum alloy, steel, stainless steel, an alloy thereof, or a combination thereof.

[0033]

[0041] In some embodiments, the inner surface 131 of the gas distribution channel 134 and the bottom surface 160 of the chamber lid assembly 132 may include a mirror-polished surface that aids in the flow of gas along the gas distribution channel 134 and the bottom surface 160 of the chamber lid assembly 132 .

[0034]

[0042] 1-3, during a processing operation, a substrate 110 is delivered to the processing chamber 100 through a slit valve 108 by a robot (not shown). The substrate 110 is positioned on a substrate support 112 by cooperation of lift pins 120 and the robot. The substrate support 112 raises the substrate 110 so that it is closely opposed to the underside of a gas distribution plate 125. A first gas flow may be injected into the gas distribution channel 134 of the processing chamber 100 by a gas supply system 130, together with or separately (i.e., pulsed) from a second gas flow. The first gas flow may include a continuous flow of purge gas from a purge gas source and a pulse of reactant gas from a reactant gas source, or may include a pulse of reactant gas from a reactant gas source and a pulse of purge gas from a purge gas source. The second gas flow can include a continuous flow of purge gas from the purge gas source and a pulse of reactant gas from the reactant gas source, or can include a pulse of reactant gas from the reactant gas source and a pulse of purge gas from the purge gas source.

[0035]

[0043] The circular gas flow 174 travels through the gas dispersion channel 134 and then through the multiple apertures 126 in the gas distribution plate 125. The gas is then deposited on the surface of the substrate 110. The downwardly sloping bottom surface 160 of the chamber lid assembly 132 helps reduce variations in the velocity of the gas flow across the surface of the gas distribution plate 125. Excess gas, by-products, etc., flow into the pumping channel 179 and are then exhausted from the processing chamber 100. Throughout processing operations, the heater plate 198 can heat the chamber lid assembly 132 to a predetermined temperature to heat solid by-products that have accumulated on the walls of the processing chamber 100 (or a process kit disposed within the chamber). As a result, the accumulated solid by-products vaporize. The vaporized by-products are exhausted by a vacuum system (not shown) and the pumping channel 179. In some embodiments, the predetermined temperature is 150°C or higher.

[0036]

[0044] Some process conditions can cause step coverage issues, for example, due to residual precursors in the gas delivery system that enable gas-phase reactions. In typical ALD processes, gas-phase reactions are usually avoided. Therefore, some embodiments of the present disclosure provide a process chamber lid and a process chamber with backside pumping capability to the chamber lid. In some embodiments, the apparatus is a thermal chamber lid without a plasma source connected to it. In some embodiments, the chamber lid is configured with a remote plasma source that provides a remote plasma to the process chamber.

[0037]

[0045] One or more embodiments of the present disclosure advantageously provide an apparatus that improves step coverage of a film on surface features. One or more embodiments of the present disclosure advantageously provide an apparatus that adds backside pumping to remove residual reactant gases. In some embodiments, the apparatus helps to more efficiently pump chemicals trapped between the lid plate and the showerhead.

[0038]

[0046] 5 illustrates a processing chamber lid assembly 500 according to one or more embodiments of the present disclosure. The housing 375 encloses a gas distribution channel 134 that extends along the central axis 133 of the housing 375. The gas distribution channel 134 has an upper portion 134a and a lower portion 134b.

[0039]

[0047] Lid plate 170 is coupled to housing 375 and has a contoured bottom surface 160. Contoured bottom surface 160 extends downward and outward from a central opening 136 coupled to lower portion 134b of gas dispersion channel 134 to a periphery 138 of lid plate 170. In the illustrated embodiment, periphery 138 refers to the outer portion of contoured bottom surface 160 adjacent peripheral edge 137.

[0040]

[0048] The lid assembly 500 includes a gas distribution plate 125 disposed below the lid plate 170. The gas distribution plate 125 has a top surface 128 and a bottom surface 129, with a plurality of apertures 126 extending through the gas distribution plate 125 from the top surface 128 to the bottom surface 129.

[0041]

[0049] The gas distribution plate 125 has an upper peripheral contour 520 configured to form a pumping channel 530 between the gas distribution plate 125 and the lid plate 170. The pumping channel 530 shown in the embodiment of FIG. 5 is defined between a peripheral bottom surface 532 of the lid plate 170 and the upper peripheral contour 520 of the gas distribution plate 125. In some embodiments, the peripheral bottom surface 532 of the lid plate 170 is farther from the central axis 133 than the periphery 138 of the contoured bottom surface 160. Stated another way, in some embodiments, the peripheral bottom surface 532 surrounds the contoured bottom surface 160.

[0042]

[0050] The contoured bottom surface 160 of the lid plate 170 and the top surface 128 of the gas distribution plate 125 define a gap G. Because the bottom surface 160 is contoured, the gap G is variable as a function of distance from the central axis 133. In some embodiments, the inner zone Z I is the intermediate zone Z Mand the intermediate zone Z M is the outer zone Z O 6A shows a schematic cross-sectional view of a lid plate 170 having a contoured bottom surface 160 similar to that shown in FIG. 5. FIG. 6B is a schematic cross-sectional view of the lid plate 170 and gas distribution plate 125 of FIG. 5, illustrating the relationship of the gap G to the radial distance from the central axis 133. In FIG. 6A, the contoured bottom surface 160 of the lid plate 170 is in the inner zone Z. I , intermediate zone Z M , and outer zone Z O In this embodiment, the intermediate zone Z M In this case, the contoured bottom surface 160 is M In the partial cross-sectional view of FIG. 6B, the intermediate zone Z M Gap G M is the intermediate zone Z M The inner zone Z is uniform from the left edge to the right edge of I In this case, the gap G I is a function of the distance x measured from the central axis 133. I Gap G in I Two measurements of dx are shown. Outer Zone Z O So, gap G O is a function of the distance x measured from the central axis 133. O Gap G O One measurement of dx is shown. Those skilled in the art will appreciate that the measurements shown are for illustrative purposes only. In Figure 6B, the apertures 126 in the gas distribution plate 125 have been omitted for illustrative purposes.

[0043]

[0051] Referring again to FIG. 6B, in some embodiments, the inner zone Z I is defined from the central axis 133 of the lid plate 170 to an inner zone radial distance RI from the central axis 133. M is the inner zone radial distance R I , the intermediate zone radial distance R from the central axis 133 MThe outer zone Z O is the radial distance Z of the intermediate zone M to the outer zone radial distance R at the outer peripheral edge 137 of the contoured bottom surface 160. O It is defined up to.

[0044]

[0052] Intermediate Zone Z M The size of the central axis 133 can be any suitable size as measured over the entire radial distance from the central axis 133 to the outer peripheral edge 137. In some embodiments, the distance from the central axis 133 to the outer peripheral edge 137 is approximately 50 mm, 100 mm, 150 mm, or 200 mm or greater. In some embodiments, the distance from the central axis 133 to the outer peripheral edge 137 is greater than the radius of the substrate being processed. For example, in an embodiment in which a 300 mm substrate is being processed, the radial distance from the central axis to the edge of the substrate, assuming the substrate is centered, is 150 mm. In this example, the distance from the central axis 133 to the outer peripheral edge 137 is 150 mm or greater.

[0045]

[0053] In some embodiments, the intermediate zone radial distance Z from the central axis 133 M In some embodiments, the intermediate zone radial distance Z from the central axis 133 is about 50 mm, 100 mm, 150 mm, or 200 mm or more. M The distance to the intermediate zone radial distance Z from the central axis 133 is greater than the radius of the substrate being processed. For example, in an embodiment where a 300 mm substrate is being processed, the radial distance from the central axis to the edge of the substrate, assuming the substrate is centered, is 150 mm. In this example, the intermediate zone radial distance Z from the central axis 133 M The distance to the

[0046]

[0054] In some embodiments, the middle zone Z of the lid plate 170 M The size of the outer zone is the radial distance R from the central axis. O In some embodiments, the distance between the intermediate zone Z of the lid plate 170 and the intermediate zone Z is in the range of about 10% to about 90% of the distance between the intermediate zone Z of the lid plate 170 and the intermediate zone Z of the lid plate 170. MThe size of the outer zone is determined by the radial distance R from the central axis 133. O In the range of about 20% to about 80%, or about 30% to about 70%, or about 40% to about 60% of the distance to the target.

[0047]

[0055] In some embodiments, the intermediate zone Z M The substantially uniform gap in the intermediate zone Z ranges from about 0.1 inches to about 2 inches (about 2.5 mm to about 51 mm). When used in this manner, the term "substantially uniform gap" refers to the gap between the intermediate zone Z and the intermediate zone Z. M A gap at any radial distance within the intermediate zone Z M This means that the gap is within 5%, 2%, 1% or 0.5% of the average gap in the

[0048]

[0056] In some embodiments, the outer zone Z O is the intermediate zone Z M to the front surface 161 of the lid plate 170. In some embodiments, the outer zone Z O is the intermediate zone Z M The flat intermediate zone Z is inclined from the upper surface 128 of the gas distribution plate 125. M Outer zone Z O The slope of the angle forms an outer zone angle θ, as shown in Figure 7. In some embodiments, the outer zone angle is in the range of about 15° to about 75°, or in the range of about 30° to about 60°, or in the range of about 40° to about 50°.

[0049]

[0057] As shown in FIGS. 5 and 7, in some embodiments, the outer zone Z of the contoured bottom surface 160 O are connected to the pumping channel 530 through pumping holes 525 formed in the lid plate 170. In some embodiments, the pumping holes 525 are located in the outer zone Z of the contoured bottom surface 160. O The number of pumping holes 525 can vary based on, for example, the size of the lid plate 170. In some embodiments, there are about 24 to about 144 pumping holes 525.

[0050]

[0058] As shown in FIG. 7, the pumping holes are located in the outer zone Z of the contoured bottom surface 160. O and at an angle φ. In some embodiments, the angle φ is in the range of about 75° to about 105°, or in the range of about 80° to about 100°, or in the range of about 85° to about 95°, or in the range of about 88° to about 92°.

[0051]

[0059] The lid assembly 500 in some embodiments includes at least one pump port 560 in fluid communication with the pumping channel 530, as shown in FIG. 5. The pump port 560 can be a separate component connected to the lid plate 170. In some embodiments, there are two or more pump ports 560 connected to the pumping channel 530 at different radial locations. In some embodiments, each of the pump ports is connected to a separate vacuum source for evacuation purposes. In some embodiments, the pump ports are in fluid communication with a single vacuum source. In some embodiments, the pump ports are in fluid communication with the pumping channel 179 (see FIG. 1).

[0052]

[0060] 8 illustrates a lid assembly 600 according to one or more embodiments of the present disclosure. The contoured bottom surface 160 of the lid plate 170 slopes from an inner edge 610 of the contoured bottom surface 160 to the outer peripheral edge 137.

[0053]

[0061] The slope of contoured bottom surface 160 creates a gap G that decreases until it reaches a minimum at peripheral edge 137. In some embodiments, the minimum gap G is in the range of about 0.01 inches to about 1 inch (about 0.25 mm to about 25.4 mm), or in the range of about 0.05 inches to about 0.5 inches (about 1.25 mm to about 12.7 mm).

[0054]

[0062] Further embodiments of the present disclosure are directed to processing chambers incorporating lid assembly 500 or lid assembly 600.

[0055]

[0063] In the foregoing specification, embodiments of the present disclosure have been described with reference to specific exemplary embodiments thereof. It will be apparent that various modifications can be made without departing from the broader spirit and scope of the embodiments of the present disclosure as set forth in the appended claims. The specification and drawings are, therefore, to be regarded in an illustrative rather than a restrictive sense.

Claims

1. a housing enclosing a gas dispersion channel extending along a central axis, the gas dispersion channel having an upper portion and a lower portion; a lid plate connected to the housing, the lid plate having a contoured bottom surface extending downwardly and outwardly from a central opening connected to the lower portion of the gas distribution channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate, the gas distribution plate having an upper peripheral contour configured to form a pumping channel between the gas distribution plate and the lid plate, the gas distribution plate having a top surface and a bottom surface having a plurality of apertures extending through the gas distribution plate from the top surface to the bottom surface, the contoured bottom surface of the lid plate and the top surface of the gas distribution plate defining a gap; 1. A processing chamber lid assembly comprising:

2. 2. The lid assembly of claim 1, wherein the contoured bottom surface of the lid plate includes an inner zone, a middle zone, and an outer zone, the inner zone having a larger gap than the middle zone, and the middle zone having a larger gap than the outer zone.

3. 3. The lid assembly of claim 2, wherein the inner zone is defined from a central axis of the lid plate to an inner zone radial distance from the central axis, the intermediate zone is defined from the inner zone radial distance to an intermediate zone radial distance from the central axis, and the outer zone is measured from the intermediate zone radial distance to an outer zone radial distance at an outer peripheral edge of the contoured bottom surface.

4. The lid assembly of claim 3 , wherein the intermediate zone of the contoured bottom surface defines a substantially uniform gap.

5. The lid assembly of claim 4 , wherein the substantially uniform gap ranges from about 0.1 inches to about 2 inches.

6. The lid assembly of claim 3 , wherein the intermediate zone occupies a range of about 10% to about 90% of the radial distance from the central axis to the outer zone.

7. The lid assembly of claim 3 , wherein the outer zone slopes from the intermediate zone to the front face of the lid plate to form an outer zone angle.

8. The lid assembly of claim 7 , wherein the outer zone of the contoured bottom surface is connected to the pumping channel through a pumping hole formed in the lid plate.

9. The lid assembly of claim 8 , wherein the pumping holes are formed in the outer zone of the contoured bottom surface.

10. The lid assembly of claim 8 , wherein the pumping holes intersect the outer zone of the contoured bottom surface at an angle ranging from about 85° to about 95°.

11. The lid assembly of claim 8 , wherein there are between about 24 and about 144 pumping holes in the outer zone.

12. The lid assembly of claim 8 , further comprising at least one pump port in fluid communication with the pumping channel.

13. 2. The lid assembly of claim 1, wherein the contoured bottom surface of the lid plate slopes from an inner edge of the contoured bottom surface to an outer peripheral edge of the contoured bottom surface so that a gap between the contoured bottom surface of the lid plate and the upper surface of the gas distribution plate decreases to a minimum at the outer peripheral edge.

14. The lid assembly of claim 13 , wherein the outer peripheral surface of the lid plate and the upper peripheral contour of the gas distribution plate define a pumping channel.

15. 14. The lid assembly of claim 13, wherein the minimum gap ranges from about 0.05 inches to about 0.5 inches.

16. The lid assembly of claim 13 , further comprising at least one pump port in fluid communication with the pumping channel.

17. A processing chamber comprising the lid assembly of any one of claims 1 to 12.

18. 20. The processing chamber of claim 17, further comprising a remote plasma source fluidly coupled to the gas distribution channel.

19. A processing chamber comprising the lid assembly of any one of claims 13 to 16.

20. 20. The processing chamber of claim 19, further comprising a remote plasma source fluidly coupled to the gas distribution channel.

Images